Abstract

A series of the p-AlxGa1−xN/AlyGa1−yN super lattice (SL) structures has been examined as the p-contact and transparent layer for different ultra-violet light-emitting-diodes (UVLEDs) with a self-consistent 1D Poisson and Schrödinger solver. The recommended solution for designing the suitable SL structure in UVLEDs with different UV wavelength has been found. By calculating the absorption coefficient of the SL structure, we confirmed that the proper SL structure has the enormous potential of being the transparent p-contact layer in AlGaN UVLED, especially in UV-C band (< 280 nm). The suitable emission wavelengths of UVLEDs ranging from 219 nm to 353 nm are found. The influences of different well and barrier thickness on SL structures are discussed as well.

© 2015 Optical Society of America

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2015 (4)

M. Erickstad, E. Gutierrez, and A. Groisman, “A low-cost low-maintenance ultraviolet lithography light source based on light-emitting diodes,” Lab Chip 15, 57–61 (2015).
[Crossref]

J. Rass, T. Kolbe, N. Lobo-Ploch, T. Wernicke, F. Mehnke, C. Kuhn, J. Enslin, M. Guttmann, C. Reich, A. Mogilatenko, J. Glaab, C. Stoelmacker, M. Lapeyrade, S. Einfeldt, M. Weyers, and M. Kneissl, “High-power UV-B LEDs with long lifetime,” Proc. SPIE 9363, 93631K (2015).
[Crossref]

T. Saxena, M. Shur, S. Nargelas, Žydrūnas Podlipskas, R. Aleksiejūnas, G. Tamulaitis, M. Shatalov, J. Yang, and R. Gaska, “Dynamics of nonequilibrium carrier decay in AlGaN epitaxial layers with high aluminum content,” Opt. Express 23, 19646–19655 (2015).
[Crossref] [PubMed]

K. H. Lee, H. J. Park, S. H. Kim, M. Asadirad, Y.-T. Moon, J. S. Kwak, and J.-H. Ryou, “Light-extraction efficiency control in AlGaN-based deep-ultraviolet flip-chip light-emitting diodes: a comparison to InGaN-based visible flip-chip light-emitting diodes,” Opt. Express 23, 20340–20349 (2015).
[Crossref] [PubMed]

2014 (4)

H.-D. Kim, H.-M. An, K. H. Kim, S. J. Kim, C. S. Kim, J. Cho, E. F. Schubert, and T. G. Kim, “A universal method of producing transparent electrodes using wide-bandgap materials,” Adv. Funct. Mater. 24, 1575–1581 (2014).
[Crossref]

T.-J. Yang, R. Shivaraman, J. S. Speck, and Y.-R. Wu, “The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior,” J. Appl. Phys. 116, 113104 (2014).
[Crossref]

W. Yang, J. Li, Y. Zhang, P.-K. Huang, T.-C. Lu, H.-C. Kuo, S. Li, X. Yang, H. Chen, D. Liu, and J. Kang, “High density GaN/AlN quantum dots for deep uv led with high quantum efficiency and temperature stability,” Sci. Rep. 4, 51–66 (2014).

H. Hirayama, N. Maeda, S. Fujikawa, S. Toyoda, and N. Kamata, “Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes,” Jpn. J. Appl. Phys. 53, 100209 (2014).
[Crossref]

2013 (4)

B.-J. Kim, G. Yang, H.-Y. Kim, K. H. Baik, M. A. Mastro, J. K. Hite, C. R. Eddy, F. Ren, S. J. Pearton, and J. Kim, “GaN-based ultraviolet light-emitting diodes with AuCl3-doped graphene electrodes,” Opt. Express 21, 29025–29030 (2013).
[Crossref]

K. Nelson, D. McMartin, C. Yost, K. Runtz, and T. Ono, “Point-of-use water disinfection using UV light-emitting diodes to reduce bacterial contamination,” Environ. Sci. Pollution Res. 20, 5441–5448 (2013).
[Crossref]

M. Shatalov, J. Yang, Y. Bilenko, M. Shur, and R. Gaska, “AlGaN deep ultraviolet LEDs with external quantum efficiency over 10%,” Lasers Electro-Opt. Pacific Rim 5, 1–2 (2013).

H.-Y. Ryu, I.-G. Choi, H.-S. Choi, and J.-I. Shim, “Investigation of light extraction efficiency in AlGaN deep-ultraviolet light-emitting diodes,” Appl. Phys. Express 6, 062101 (2013).
[Crossref]

2012 (1)

Y.-R. Wu, R. Shivaraman, K.-C. Wang, and J. S. Speck, “Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure,” Appl. Phys. Lett. 101, 083505 (2012).
[Crossref]

2011 (2)

M. Kneissl, T. Kolbe, C. Chua, V. Kueller, N. Lobo, J. Stellmach, A. Knauer, H. Rodriguez, S. Einfeldt, Z. Yang, N. M. Johnson, and M. Weyers, “Advances in group III-nitride-based deep UV light-emitting diode technology,” Semicond. Sci. Technol. 26, 014036 (2011).
[Crossref]

C. Pernot, S. Fukahori, T. Inazu, T. Fujita, M. Kim, Y. Nagasawa, A. Hirano, M. Ippommatsu, M. Iwaya, S. Kamiyama, I. Akasaki, and H. Amano, “Development of high efficiency 255–355nm AlGaN-based light-emitting diodes,” Phys. Status Solidi A 208, 1594–1596 (2011).
[Crossref]

2010 (2)

T. Passow, R. Gutt, M. Maier, W. Pletschen, M. Kunzer, R. Schmidt, J. Wiegert, D. Luick, S. Liu, K. Khler, and J. Wagner, “Ni/Ag as low resistive ohmic contact to p-type AlGaN for UV LEDs,” Proc. SPIE 7617, 76171 (2010).
[Crossref]

A. Allerman, M. Crawford, M. Miller, and S. Lee, “Growth and characterization of Mg-doped AlGaN-AlN short-period superlattices for deep-UV optoelectronic devices,” J. Crystal Growth 312, 756–761 (2010).
[Crossref]

2009 (3)

Y.-R. Wu, C. Chiu, C.-Y. Chang, P. Yu, and H.-C. Kuo, “Size-dependent strain relaxation and optical characteristics of InGaN/GaN nanorod LEDs,” IEEE J. Sel. Top. Quantum Electron. 15, 1226–1233 (2009).
[Crossref]

E. Becatti, K. Petroni, D. Giuntini, A. Castagna, V. Calvenzani, G. Serra, A. Mensuali-Sodi, C. Tonelli, and A. Ranieri, “Solar UV-B radiation influences carotenoid accumulation of tomato fruit through both ethylene-dependent and -independent mechanisms,” J. Agric. Food Chem. 57, 10979–10989 (2009).
[Crossref] [PubMed]

H. Hirayama, S. Fujikawa, N. Noguchi, J. Norimatsu, T. Takano, K. Tsubaki, and N. Kamata, “222–282 nm AlGaN and InAlGaN-based deep-UV leds fabricated on high-quality AlN on sapphire,” Phys. Status Solidi A 206, 1176–1182 (2009).
[Crossref]

2008 (2)

M. A. Khan, K. Balakrishnan, and T. Katona, “Ultraviolet light-emitting diodes based on group three nitrides,” Nat. Photonics 2, 77–84 (2008).
[Crossref]

H. Xu, J. Zhang, K. M. Davitt, Y.-K. Song, and A. V. Nurmikko, “Application of blue-reen and ultraviolet micro-LEDs to biological imaging and detection,” J. Phys. D: Appl. Phys. 41, 094013 (2008).
[Crossref]

2007 (1)

H. Hirayama, T. Yatabe, N. Noguchi, T. Ohashi, and N. Kamata, “231–261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire,” Appl. Phys. Lett. 91, 071901 (2007).
[Crossref]

2006 (2)

M. A. Khan, “Algan multiple quantum well based deep uv leds and their applications,” Phys. Status Solidi A 203, 1764–1770 (2006).
[Crossref]

Y. Taniyasu, M. Kasu, and T. Makimoto, “An aluminium nitride light-emitting diode with a wavelength of 210 nanometres,” Nature 441, 325–328 (2006).
[Crossref] [PubMed]

2005 (1)

M. A. Khan, M. Shatalov, H. P. Maruska, H. M. Wang, and E. Kuokstis, “III-Nitride UV devices,” Jpn. J. Appl. Phys. 44, 7191 (2005).
[Crossref]

2003 (2)

T. Nishida, N. Kobayashi, and T. Ban, “GaN-free transparent ultraviolet light-emitting diodes,” Appl. Phys. Lett. 82, 1–3 (2003).
[Crossref]

Y.-R. Wu, M. Singh, and J. Singh, “Gate leakage suppression and contact engineering in nitride heterostructures,” J. Appl. Phys. 94, 5826–5831 (2003).
[Crossref]

2002 (1)

O. Ambacher, J. Majewski, C. Miskys, A. Link, M. Hermann, M. Eickhoff, M. Stutzmann, F. Bernardini, V. Fiorentini, V. Tilak, B. Schaff, and L. F. Eastman, “Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures,” J. Phys.: Condens. Matter 14, 3399 (2002).

1997 (1)

J. F. Muth, J. H. Lee, I. K. Shmagin, R. M. Kolbas, H. C. Casey, B. P. Keller, U. K. Mishra, and S. P. DenBaars, “Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of gan obtained from transmission measurements,” Appl. Phys. Lett. 71, 2572–2574 (1997).
[Crossref]

1989 (1)

L. Pavesi, E. Tuncel, B. Zimmermann, and F. K. Reinhart, “Photoluminescence of disorder-induced localized states in GaAs/AlxGa1−xAs superlattices,” Phys. Rev. B 39, 7788–7795 (1989).
[Crossref]

Akasaki, I.

C. Pernot, S. Fukahori, T. Inazu, T. Fujita, M. Kim, Y. Nagasawa, A. Hirano, M. Ippommatsu, M. Iwaya, S. Kamiyama, I. Akasaki, and H. Amano, “Development of high efficiency 255–355nm AlGaN-based light-emitting diodes,” Phys. Status Solidi A 208, 1594–1596 (2011).
[Crossref]

Aleksiejunas, R.

Allerman, A.

A. Allerman, M. Crawford, M. Miller, and S. Lee, “Growth and characterization of Mg-doped AlGaN-AlN short-period superlattices for deep-UV optoelectronic devices,” J. Crystal Growth 312, 756–761 (2010).
[Crossref]

Amano, H.

C. Pernot, S. Fukahori, T. Inazu, T. Fujita, M. Kim, Y. Nagasawa, A. Hirano, M. Ippommatsu, M. Iwaya, S. Kamiyama, I. Akasaki, and H. Amano, “Development of high efficiency 255–355nm AlGaN-based light-emitting diodes,” Phys. Status Solidi A 208, 1594–1596 (2011).
[Crossref]

Ambacher, O.

O. Ambacher, J. Majewski, C. Miskys, A. Link, M. Hermann, M. Eickhoff, M. Stutzmann, F. Bernardini, V. Fiorentini, V. Tilak, B. Schaff, and L. F. Eastman, “Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures,” J. Phys.: Condens. Matter 14, 3399 (2002).

An, H.-M.

H.-D. Kim, H.-M. An, K. H. Kim, S. J. Kim, C. S. Kim, J. Cho, E. F. Schubert, and T. G. Kim, “A universal method of producing transparent electrodes using wide-bandgap materials,” Adv. Funct. Mater. 24, 1575–1581 (2014).
[Crossref]

Asadirad, M.

Baik, K. H.

Balakrishnan, K.

M. A. Khan, K. Balakrishnan, and T. Katona, “Ultraviolet light-emitting diodes based on group three nitrides,” Nat. Photonics 2, 77–84 (2008).
[Crossref]

Ban, T.

T. Nishida, N. Kobayashi, and T. Ban, “GaN-free transparent ultraviolet light-emitting diodes,” Appl. Phys. Lett. 82, 1–3 (2003).
[Crossref]

Becatti, E.

E. Becatti, K. Petroni, D. Giuntini, A. Castagna, V. Calvenzani, G. Serra, A. Mensuali-Sodi, C. Tonelli, and A. Ranieri, “Solar UV-B radiation influences carotenoid accumulation of tomato fruit through both ethylene-dependent and -independent mechanisms,” J. Agric. Food Chem. 57, 10979–10989 (2009).
[Crossref] [PubMed]

Bernardini, F.

O. Ambacher, J. Majewski, C. Miskys, A. Link, M. Hermann, M. Eickhoff, M. Stutzmann, F. Bernardini, V. Fiorentini, V. Tilak, B. Schaff, and L. F. Eastman, “Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures,” J. Phys.: Condens. Matter 14, 3399 (2002).

Bilenko, Y.

M. Shatalov, J. Yang, Y. Bilenko, M. Shur, and R. Gaska, “AlGaN deep ultraviolet LEDs with external quantum efficiency over 10%,” Lasers Electro-Opt. Pacific Rim 5, 1–2 (2013).

Calvenzani, V.

E. Becatti, K. Petroni, D. Giuntini, A. Castagna, V. Calvenzani, G. Serra, A. Mensuali-Sodi, C. Tonelli, and A. Ranieri, “Solar UV-B radiation influences carotenoid accumulation of tomato fruit through both ethylene-dependent and -independent mechanisms,” J. Agric. Food Chem. 57, 10979–10989 (2009).
[Crossref] [PubMed]

Casey, H. C.

J. F. Muth, J. H. Lee, I. K. Shmagin, R. M. Kolbas, H. C. Casey, B. P. Keller, U. K. Mishra, and S. P. DenBaars, “Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of gan obtained from transmission measurements,” Appl. Phys. Lett. 71, 2572–2574 (1997).
[Crossref]

Castagna, A.

E. Becatti, K. Petroni, D. Giuntini, A. Castagna, V. Calvenzani, G. Serra, A. Mensuali-Sodi, C. Tonelli, and A. Ranieri, “Solar UV-B radiation influences carotenoid accumulation of tomato fruit through both ethylene-dependent and -independent mechanisms,” J. Agric. Food Chem. 57, 10979–10989 (2009).
[Crossref] [PubMed]

Chang, C.-Y.

Y.-R. Wu, C. Chiu, C.-Y. Chang, P. Yu, and H.-C. Kuo, “Size-dependent strain relaxation and optical characteristics of InGaN/GaN nanorod LEDs,” IEEE J. Sel. Top. Quantum Electron. 15, 1226–1233 (2009).
[Crossref]

Chen, H.

W. Yang, J. Li, Y. Zhang, P.-K. Huang, T.-C. Lu, H.-C. Kuo, S. Li, X. Yang, H. Chen, D. Liu, and J. Kang, “High density GaN/AlN quantum dots for deep uv led with high quantum efficiency and temperature stability,” Sci. Rep. 4, 51–66 (2014).

Chiu, C.

Y.-R. Wu, C. Chiu, C.-Y. Chang, P. Yu, and H.-C. Kuo, “Size-dependent strain relaxation and optical characteristics of InGaN/GaN nanorod LEDs,” IEEE J. Sel. Top. Quantum Electron. 15, 1226–1233 (2009).
[Crossref]

Cho, J.

H.-D. Kim, H.-M. An, K. H. Kim, S. J. Kim, C. S. Kim, J. Cho, E. F. Schubert, and T. G. Kim, “A universal method of producing transparent electrodes using wide-bandgap materials,” Adv. Funct. Mater. 24, 1575–1581 (2014).
[Crossref]

Choi, H.-S.

H.-Y. Ryu, I.-G. Choi, H.-S. Choi, and J.-I. Shim, “Investigation of light extraction efficiency in AlGaN deep-ultraviolet light-emitting diodes,” Appl. Phys. Express 6, 062101 (2013).
[Crossref]

Choi, I.-G.

H.-Y. Ryu, I.-G. Choi, H.-S. Choi, and J.-I. Shim, “Investigation of light extraction efficiency in AlGaN deep-ultraviolet light-emitting diodes,” Appl. Phys. Express 6, 062101 (2013).
[Crossref]

Chua, C.

M. Kneissl, T. Kolbe, C. Chua, V. Kueller, N. Lobo, J. Stellmach, A. Knauer, H. Rodriguez, S. Einfeldt, Z. Yang, N. M. Johnson, and M. Weyers, “Advances in group III-nitride-based deep UV light-emitting diode technology,” Semicond. Sci. Technol. 26, 014036 (2011).
[Crossref]

Crawford, M.

A. Allerman, M. Crawford, M. Miller, and S. Lee, “Growth and characterization of Mg-doped AlGaN-AlN short-period superlattices for deep-UV optoelectronic devices,” J. Crystal Growth 312, 756–761 (2010).
[Crossref]

Davitt, K. M.

H. Xu, J. Zhang, K. M. Davitt, Y.-K. Song, and A. V. Nurmikko, “Application of blue-reen and ultraviolet micro-LEDs to biological imaging and detection,” J. Phys. D: Appl. Phys. 41, 094013 (2008).
[Crossref]

DenBaars, S. P.

J. F. Muth, J. H. Lee, I. K. Shmagin, R. M. Kolbas, H. C. Casey, B. P. Keller, U. K. Mishra, and S. P. DenBaars, “Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of gan obtained from transmission measurements,” Appl. Phys. Lett. 71, 2572–2574 (1997).
[Crossref]

Eastman, L. F.

O. Ambacher, J. Majewski, C. Miskys, A. Link, M. Hermann, M. Eickhoff, M. Stutzmann, F. Bernardini, V. Fiorentini, V. Tilak, B. Schaff, and L. F. Eastman, “Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures,” J. Phys.: Condens. Matter 14, 3399 (2002).

Eddy, C. R.

Eickhoff, M.

O. Ambacher, J. Majewski, C. Miskys, A. Link, M. Hermann, M. Eickhoff, M. Stutzmann, F. Bernardini, V. Fiorentini, V. Tilak, B. Schaff, and L. F. Eastman, “Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures,” J. Phys.: Condens. Matter 14, 3399 (2002).

Einfeldt, S.

J. Rass, T. Kolbe, N. Lobo-Ploch, T. Wernicke, F. Mehnke, C. Kuhn, J. Enslin, M. Guttmann, C. Reich, A. Mogilatenko, J. Glaab, C. Stoelmacker, M. Lapeyrade, S. Einfeldt, M. Weyers, and M. Kneissl, “High-power UV-B LEDs with long lifetime,” Proc. SPIE 9363, 93631K (2015).
[Crossref]

M. Kneissl, T. Kolbe, C. Chua, V. Kueller, N. Lobo, J. Stellmach, A. Knauer, H. Rodriguez, S. Einfeldt, Z. Yang, N. M. Johnson, and M. Weyers, “Advances in group III-nitride-based deep UV light-emitting diode technology,” Semicond. Sci. Technol. 26, 014036 (2011).
[Crossref]

Enslin, J.

J. Rass, T. Kolbe, N. Lobo-Ploch, T. Wernicke, F. Mehnke, C. Kuhn, J. Enslin, M. Guttmann, C. Reich, A. Mogilatenko, J. Glaab, C. Stoelmacker, M. Lapeyrade, S. Einfeldt, M. Weyers, and M. Kneissl, “High-power UV-B LEDs with long lifetime,” Proc. SPIE 9363, 93631K (2015).
[Crossref]

Erickstad, M.

M. Erickstad, E. Gutierrez, and A. Groisman, “A low-cost low-maintenance ultraviolet lithography light source based on light-emitting diodes,” Lab Chip 15, 57–61 (2015).
[Crossref]

Fiorentini, V.

O. Ambacher, J. Majewski, C. Miskys, A. Link, M. Hermann, M. Eickhoff, M. Stutzmann, F. Bernardini, V. Fiorentini, V. Tilak, B. Schaff, and L. F. Eastman, “Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures,” J. Phys.: Condens. Matter 14, 3399 (2002).

Fujikawa, S.

H. Hirayama, N. Maeda, S. Fujikawa, S. Toyoda, and N. Kamata, “Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes,” Jpn. J. Appl. Phys. 53, 100209 (2014).
[Crossref]

H. Hirayama, S. Fujikawa, N. Noguchi, J. Norimatsu, T. Takano, K. Tsubaki, and N. Kamata, “222–282 nm AlGaN and InAlGaN-based deep-UV leds fabricated on high-quality AlN on sapphire,” Phys. Status Solidi A 206, 1176–1182 (2009).
[Crossref]

Fujita, T.

C. Pernot, S. Fukahori, T. Inazu, T. Fujita, M. Kim, Y. Nagasawa, A. Hirano, M. Ippommatsu, M. Iwaya, S. Kamiyama, I. Akasaki, and H. Amano, “Development of high efficiency 255–355nm AlGaN-based light-emitting diodes,” Phys. Status Solidi A 208, 1594–1596 (2011).
[Crossref]

Fukahori, S.

C. Pernot, S. Fukahori, T. Inazu, T. Fujita, M. Kim, Y. Nagasawa, A. Hirano, M. Ippommatsu, M. Iwaya, S. Kamiyama, I. Akasaki, and H. Amano, “Development of high efficiency 255–355nm AlGaN-based light-emitting diodes,” Phys. Status Solidi A 208, 1594–1596 (2011).
[Crossref]

Gaska, R.

Giuntini, D.

E. Becatti, K. Petroni, D. Giuntini, A. Castagna, V. Calvenzani, G. Serra, A. Mensuali-Sodi, C. Tonelli, and A. Ranieri, “Solar UV-B radiation influences carotenoid accumulation of tomato fruit through both ethylene-dependent and -independent mechanisms,” J. Agric. Food Chem. 57, 10979–10989 (2009).
[Crossref] [PubMed]

Glaab, J.

J. Rass, T. Kolbe, N. Lobo-Ploch, T. Wernicke, F. Mehnke, C. Kuhn, J. Enslin, M. Guttmann, C. Reich, A. Mogilatenko, J. Glaab, C. Stoelmacker, M. Lapeyrade, S. Einfeldt, M. Weyers, and M. Kneissl, “High-power UV-B LEDs with long lifetime,” Proc. SPIE 9363, 93631K (2015).
[Crossref]

Groisman, A.

M. Erickstad, E. Gutierrez, and A. Groisman, “A low-cost low-maintenance ultraviolet lithography light source based on light-emitting diodes,” Lab Chip 15, 57–61 (2015).
[Crossref]

Gutierrez, E.

M. Erickstad, E. Gutierrez, and A. Groisman, “A low-cost low-maintenance ultraviolet lithography light source based on light-emitting diodes,” Lab Chip 15, 57–61 (2015).
[Crossref]

Gutt, R.

T. Passow, R. Gutt, M. Maier, W. Pletschen, M. Kunzer, R. Schmidt, J. Wiegert, D. Luick, S. Liu, K. Khler, and J. Wagner, “Ni/Ag as low resistive ohmic contact to p-type AlGaN for UV LEDs,” Proc. SPIE 7617, 76171 (2010).
[Crossref]

Guttmann, M.

J. Rass, T. Kolbe, N. Lobo-Ploch, T. Wernicke, F. Mehnke, C. Kuhn, J. Enslin, M. Guttmann, C. Reich, A. Mogilatenko, J. Glaab, C. Stoelmacker, M. Lapeyrade, S. Einfeldt, M. Weyers, and M. Kneissl, “High-power UV-B LEDs with long lifetime,” Proc. SPIE 9363, 93631K (2015).
[Crossref]

Hermann, M.

O. Ambacher, J. Majewski, C. Miskys, A. Link, M. Hermann, M. Eickhoff, M. Stutzmann, F. Bernardini, V. Fiorentini, V. Tilak, B. Schaff, and L. F. Eastman, “Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures,” J. Phys.: Condens. Matter 14, 3399 (2002).

Hirano, A.

C. Pernot, S. Fukahori, T. Inazu, T. Fujita, M. Kim, Y. Nagasawa, A. Hirano, M. Ippommatsu, M. Iwaya, S. Kamiyama, I. Akasaki, and H. Amano, “Development of high efficiency 255–355nm AlGaN-based light-emitting diodes,” Phys. Status Solidi A 208, 1594–1596 (2011).
[Crossref]

Hirayama, H.

H. Hirayama, N. Maeda, S. Fujikawa, S. Toyoda, and N. Kamata, “Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes,” Jpn. J. Appl. Phys. 53, 100209 (2014).
[Crossref]

H. Hirayama, S. Fujikawa, N. Noguchi, J. Norimatsu, T. Takano, K. Tsubaki, and N. Kamata, “222–282 nm AlGaN and InAlGaN-based deep-UV leds fabricated on high-quality AlN on sapphire,” Phys. Status Solidi A 206, 1176–1182 (2009).
[Crossref]

H. Hirayama, T. Yatabe, N. Noguchi, T. Ohashi, and N. Kamata, “231–261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire,” Appl. Phys. Lett. 91, 071901 (2007).
[Crossref]

Hite, J. K.

Huang, P.-K.

W. Yang, J. Li, Y. Zhang, P.-K. Huang, T.-C. Lu, H.-C. Kuo, S. Li, X. Yang, H. Chen, D. Liu, and J. Kang, “High density GaN/AlN quantum dots for deep uv led with high quantum efficiency and temperature stability,” Sci. Rep. 4, 51–66 (2014).

Inazu, T.

C. Pernot, S. Fukahori, T. Inazu, T. Fujita, M. Kim, Y. Nagasawa, A. Hirano, M. Ippommatsu, M. Iwaya, S. Kamiyama, I. Akasaki, and H. Amano, “Development of high efficiency 255–355nm AlGaN-based light-emitting diodes,” Phys. Status Solidi A 208, 1594–1596 (2011).
[Crossref]

Ippommatsu, M.

C. Pernot, S. Fukahori, T. Inazu, T. Fujita, M. Kim, Y. Nagasawa, A. Hirano, M. Ippommatsu, M. Iwaya, S. Kamiyama, I. Akasaki, and H. Amano, “Development of high efficiency 255–355nm AlGaN-based light-emitting diodes,” Phys. Status Solidi A 208, 1594–1596 (2011).
[Crossref]

Iwaya, M.

C. Pernot, S. Fukahori, T. Inazu, T. Fujita, M. Kim, Y. Nagasawa, A. Hirano, M. Ippommatsu, M. Iwaya, S. Kamiyama, I. Akasaki, and H. Amano, “Development of high efficiency 255–355nm AlGaN-based light-emitting diodes,” Phys. Status Solidi A 208, 1594–1596 (2011).
[Crossref]

Johnson, N. M.

M. Kneissl, T. Kolbe, C. Chua, V. Kueller, N. Lobo, J. Stellmach, A. Knauer, H. Rodriguez, S. Einfeldt, Z. Yang, N. M. Johnson, and M. Weyers, “Advances in group III-nitride-based deep UV light-emitting diode technology,” Semicond. Sci. Technol. 26, 014036 (2011).
[Crossref]

Kamata, N.

H. Hirayama, N. Maeda, S. Fujikawa, S. Toyoda, and N. Kamata, “Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes,” Jpn. J. Appl. Phys. 53, 100209 (2014).
[Crossref]

H. Hirayama, S. Fujikawa, N. Noguchi, J. Norimatsu, T. Takano, K. Tsubaki, and N. Kamata, “222–282 nm AlGaN and InAlGaN-based deep-UV leds fabricated on high-quality AlN on sapphire,” Phys. Status Solidi A 206, 1176–1182 (2009).
[Crossref]

H. Hirayama, T. Yatabe, N. Noguchi, T. Ohashi, and N. Kamata, “231–261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire,” Appl. Phys. Lett. 91, 071901 (2007).
[Crossref]

Kamiyama, S.

C. Pernot, S. Fukahori, T. Inazu, T. Fujita, M. Kim, Y. Nagasawa, A. Hirano, M. Ippommatsu, M. Iwaya, S. Kamiyama, I. Akasaki, and H. Amano, “Development of high efficiency 255–355nm AlGaN-based light-emitting diodes,” Phys. Status Solidi A 208, 1594–1596 (2011).
[Crossref]

Kang, J.

W. Yang, J. Li, Y. Zhang, P.-K. Huang, T.-C. Lu, H.-C. Kuo, S. Li, X. Yang, H. Chen, D. Liu, and J. Kang, “High density GaN/AlN quantum dots for deep uv led with high quantum efficiency and temperature stability,” Sci. Rep. 4, 51–66 (2014).

Kasu, M.

Y. Taniyasu, M. Kasu, and T. Makimoto, “An aluminium nitride light-emitting diode with a wavelength of 210 nanometres,” Nature 441, 325–328 (2006).
[Crossref] [PubMed]

Katona, T.

M. A. Khan, K. Balakrishnan, and T. Katona, “Ultraviolet light-emitting diodes based on group three nitrides,” Nat. Photonics 2, 77–84 (2008).
[Crossref]

Keller, B. P.

J. F. Muth, J. H. Lee, I. K. Shmagin, R. M. Kolbas, H. C. Casey, B. P. Keller, U. K. Mishra, and S. P. DenBaars, “Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of gan obtained from transmission measurements,” Appl. Phys. Lett. 71, 2572–2574 (1997).
[Crossref]

Khan, M. A.

M. A. Khan, K. Balakrishnan, and T. Katona, “Ultraviolet light-emitting diodes based on group three nitrides,” Nat. Photonics 2, 77–84 (2008).
[Crossref]

M. A. Khan, “Algan multiple quantum well based deep uv leds and their applications,” Phys. Status Solidi A 203, 1764–1770 (2006).
[Crossref]

M. A. Khan, M. Shatalov, H. P. Maruska, H. M. Wang, and E. Kuokstis, “III-Nitride UV devices,” Jpn. J. Appl. Phys. 44, 7191 (2005).
[Crossref]

Khler, K.

T. Passow, R. Gutt, M. Maier, W. Pletschen, M. Kunzer, R. Schmidt, J. Wiegert, D. Luick, S. Liu, K. Khler, and J. Wagner, “Ni/Ag as low resistive ohmic contact to p-type AlGaN for UV LEDs,” Proc. SPIE 7617, 76171 (2010).
[Crossref]

Kim, B.-J.

Kim, C. S.

H.-D. Kim, H.-M. An, K. H. Kim, S. J. Kim, C. S. Kim, J. Cho, E. F. Schubert, and T. G. Kim, “A universal method of producing transparent electrodes using wide-bandgap materials,” Adv. Funct. Mater. 24, 1575–1581 (2014).
[Crossref]

Kim, H.-D.

H.-D. Kim, H.-M. An, K. H. Kim, S. J. Kim, C. S. Kim, J. Cho, E. F. Schubert, and T. G. Kim, “A universal method of producing transparent electrodes using wide-bandgap materials,” Adv. Funct. Mater. 24, 1575–1581 (2014).
[Crossref]

Kim, H.-Y.

Kim, J.

Kim, K. H.

H.-D. Kim, H.-M. An, K. H. Kim, S. J. Kim, C. S. Kim, J. Cho, E. F. Schubert, and T. G. Kim, “A universal method of producing transparent electrodes using wide-bandgap materials,” Adv. Funct. Mater. 24, 1575–1581 (2014).
[Crossref]

Kim, M.

C. Pernot, S. Fukahori, T. Inazu, T. Fujita, M. Kim, Y. Nagasawa, A. Hirano, M. Ippommatsu, M. Iwaya, S. Kamiyama, I. Akasaki, and H. Amano, “Development of high efficiency 255–355nm AlGaN-based light-emitting diodes,” Phys. Status Solidi A 208, 1594–1596 (2011).
[Crossref]

Kim, S. H.

Kim, S. J.

H.-D. Kim, H.-M. An, K. H. Kim, S. J. Kim, C. S. Kim, J. Cho, E. F. Schubert, and T. G. Kim, “A universal method of producing transparent electrodes using wide-bandgap materials,” Adv. Funct. Mater. 24, 1575–1581 (2014).
[Crossref]

Kim, T. G.

H.-D. Kim, H.-M. An, K. H. Kim, S. J. Kim, C. S. Kim, J. Cho, E. F. Schubert, and T. G. Kim, “A universal method of producing transparent electrodes using wide-bandgap materials,” Adv. Funct. Mater. 24, 1575–1581 (2014).
[Crossref]

Knauer, A.

M. Kneissl, T. Kolbe, C. Chua, V. Kueller, N. Lobo, J. Stellmach, A. Knauer, H. Rodriguez, S. Einfeldt, Z. Yang, N. M. Johnson, and M. Weyers, “Advances in group III-nitride-based deep UV light-emitting diode technology,” Semicond. Sci. Technol. 26, 014036 (2011).
[Crossref]

Kneissl, M.

J. Rass, T. Kolbe, N. Lobo-Ploch, T. Wernicke, F. Mehnke, C. Kuhn, J. Enslin, M. Guttmann, C. Reich, A. Mogilatenko, J. Glaab, C. Stoelmacker, M. Lapeyrade, S. Einfeldt, M. Weyers, and M. Kneissl, “High-power UV-B LEDs with long lifetime,” Proc. SPIE 9363, 93631K (2015).
[Crossref]

M. Kneissl, T. Kolbe, C. Chua, V. Kueller, N. Lobo, J. Stellmach, A. Knauer, H. Rodriguez, S. Einfeldt, Z. Yang, N. M. Johnson, and M. Weyers, “Advances in group III-nitride-based deep UV light-emitting diode technology,” Semicond. Sci. Technol. 26, 014036 (2011).
[Crossref]

Kobayashi, N.

T. Nishida, N. Kobayashi, and T. Ban, “GaN-free transparent ultraviolet light-emitting diodes,” Appl. Phys. Lett. 82, 1–3 (2003).
[Crossref]

Kolbas, R. M.

J. F. Muth, J. H. Lee, I. K. Shmagin, R. M. Kolbas, H. C. Casey, B. P. Keller, U. K. Mishra, and S. P. DenBaars, “Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of gan obtained from transmission measurements,” Appl. Phys. Lett. 71, 2572–2574 (1997).
[Crossref]

Kolbe, T.

J. Rass, T. Kolbe, N. Lobo-Ploch, T. Wernicke, F. Mehnke, C. Kuhn, J. Enslin, M. Guttmann, C. Reich, A. Mogilatenko, J. Glaab, C. Stoelmacker, M. Lapeyrade, S. Einfeldt, M. Weyers, and M. Kneissl, “High-power UV-B LEDs with long lifetime,” Proc. SPIE 9363, 93631K (2015).
[Crossref]

M. Kneissl, T. Kolbe, C. Chua, V. Kueller, N. Lobo, J. Stellmach, A. Knauer, H. Rodriguez, S. Einfeldt, Z. Yang, N. M. Johnson, and M. Weyers, “Advances in group III-nitride-based deep UV light-emitting diode technology,” Semicond. Sci. Technol. 26, 014036 (2011).
[Crossref]

Kueller, V.

M. Kneissl, T. Kolbe, C. Chua, V. Kueller, N. Lobo, J. Stellmach, A. Knauer, H. Rodriguez, S. Einfeldt, Z. Yang, N. M. Johnson, and M. Weyers, “Advances in group III-nitride-based deep UV light-emitting diode technology,” Semicond. Sci. Technol. 26, 014036 (2011).
[Crossref]

Kuhn, C.

J. Rass, T. Kolbe, N. Lobo-Ploch, T. Wernicke, F. Mehnke, C. Kuhn, J. Enslin, M. Guttmann, C. Reich, A. Mogilatenko, J. Glaab, C. Stoelmacker, M. Lapeyrade, S. Einfeldt, M. Weyers, and M. Kneissl, “High-power UV-B LEDs with long lifetime,” Proc. SPIE 9363, 93631K (2015).
[Crossref]

Kunzer, M.

T. Passow, R. Gutt, M. Maier, W. Pletschen, M. Kunzer, R. Schmidt, J. Wiegert, D. Luick, S. Liu, K. Khler, and J. Wagner, “Ni/Ag as low resistive ohmic contact to p-type AlGaN for UV LEDs,” Proc. SPIE 7617, 76171 (2010).
[Crossref]

Kuo, H.-C.

W. Yang, J. Li, Y. Zhang, P.-K. Huang, T.-C. Lu, H.-C. Kuo, S. Li, X. Yang, H. Chen, D. Liu, and J. Kang, “High density GaN/AlN quantum dots for deep uv led with high quantum efficiency and temperature stability,” Sci. Rep. 4, 51–66 (2014).

Y.-R. Wu, C. Chiu, C.-Y. Chang, P. Yu, and H.-C. Kuo, “Size-dependent strain relaxation and optical characteristics of InGaN/GaN nanorod LEDs,” IEEE J. Sel. Top. Quantum Electron. 15, 1226–1233 (2009).
[Crossref]

Kuokstis, E.

M. A. Khan, M. Shatalov, H. P. Maruska, H. M. Wang, and E. Kuokstis, “III-Nitride UV devices,” Jpn. J. Appl. Phys. 44, 7191 (2005).
[Crossref]

Kwak, J. S.

Lapeyrade, M.

J. Rass, T. Kolbe, N. Lobo-Ploch, T. Wernicke, F. Mehnke, C. Kuhn, J. Enslin, M. Guttmann, C. Reich, A. Mogilatenko, J. Glaab, C. Stoelmacker, M. Lapeyrade, S. Einfeldt, M. Weyers, and M. Kneissl, “High-power UV-B LEDs with long lifetime,” Proc. SPIE 9363, 93631K (2015).
[Crossref]

Lee, J. H.

J. F. Muth, J. H. Lee, I. K. Shmagin, R. M. Kolbas, H. C. Casey, B. P. Keller, U. K. Mishra, and S. P. DenBaars, “Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of gan obtained from transmission measurements,” Appl. Phys. Lett. 71, 2572–2574 (1997).
[Crossref]

Lee, K. H.

Lee, S.

A. Allerman, M. Crawford, M. Miller, and S. Lee, “Growth and characterization of Mg-doped AlGaN-AlN short-period superlattices for deep-UV optoelectronic devices,” J. Crystal Growth 312, 756–761 (2010).
[Crossref]

Li, J.

W. Yang, J. Li, Y. Zhang, P.-K. Huang, T.-C. Lu, H.-C. Kuo, S. Li, X. Yang, H. Chen, D. Liu, and J. Kang, “High density GaN/AlN quantum dots for deep uv led with high quantum efficiency and temperature stability,” Sci. Rep. 4, 51–66 (2014).

Li, S.

W. Yang, J. Li, Y. Zhang, P.-K. Huang, T.-C. Lu, H.-C. Kuo, S. Li, X. Yang, H. Chen, D. Liu, and J. Kang, “High density GaN/AlN quantum dots for deep uv led with high quantum efficiency and temperature stability,” Sci. Rep. 4, 51–66 (2014).

Link, A.

O. Ambacher, J. Majewski, C. Miskys, A. Link, M. Hermann, M. Eickhoff, M. Stutzmann, F. Bernardini, V. Fiorentini, V. Tilak, B. Schaff, and L. F. Eastman, “Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures,” J. Phys.: Condens. Matter 14, 3399 (2002).

Liu, D.

W. Yang, J. Li, Y. Zhang, P.-K. Huang, T.-C. Lu, H.-C. Kuo, S. Li, X. Yang, H. Chen, D. Liu, and J. Kang, “High density GaN/AlN quantum dots for deep uv led with high quantum efficiency and temperature stability,” Sci. Rep. 4, 51–66 (2014).

Liu, S.

T. Passow, R. Gutt, M. Maier, W. Pletschen, M. Kunzer, R. Schmidt, J. Wiegert, D. Luick, S. Liu, K. Khler, and J. Wagner, “Ni/Ag as low resistive ohmic contact to p-type AlGaN for UV LEDs,” Proc. SPIE 7617, 76171 (2010).
[Crossref]

Lobo, N.

M. Kneissl, T. Kolbe, C. Chua, V. Kueller, N. Lobo, J. Stellmach, A. Knauer, H. Rodriguez, S. Einfeldt, Z. Yang, N. M. Johnson, and M. Weyers, “Advances in group III-nitride-based deep UV light-emitting diode technology,” Semicond. Sci. Technol. 26, 014036 (2011).
[Crossref]

Lobo-Ploch, N.

J. Rass, T. Kolbe, N. Lobo-Ploch, T. Wernicke, F. Mehnke, C. Kuhn, J. Enslin, M. Guttmann, C. Reich, A. Mogilatenko, J. Glaab, C. Stoelmacker, M. Lapeyrade, S. Einfeldt, M. Weyers, and M. Kneissl, “High-power UV-B LEDs with long lifetime,” Proc. SPIE 9363, 93631K (2015).
[Crossref]

Lu, T.-C.

W. Yang, J. Li, Y. Zhang, P.-K. Huang, T.-C. Lu, H.-C. Kuo, S. Li, X. Yang, H. Chen, D. Liu, and J. Kang, “High density GaN/AlN quantum dots for deep uv led with high quantum efficiency and temperature stability,” Sci. Rep. 4, 51–66 (2014).

Luick, D.

T. Passow, R. Gutt, M. Maier, W. Pletschen, M. Kunzer, R. Schmidt, J. Wiegert, D. Luick, S. Liu, K. Khler, and J. Wagner, “Ni/Ag as low resistive ohmic contact to p-type AlGaN for UV LEDs,” Proc. SPIE 7617, 76171 (2010).
[Crossref]

Maeda, N.

H. Hirayama, N. Maeda, S. Fujikawa, S. Toyoda, and N. Kamata, “Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes,” Jpn. J. Appl. Phys. 53, 100209 (2014).
[Crossref]

Maier, M.

T. Passow, R. Gutt, M. Maier, W. Pletschen, M. Kunzer, R. Schmidt, J. Wiegert, D. Luick, S. Liu, K. Khler, and J. Wagner, “Ni/Ag as low resistive ohmic contact to p-type AlGaN for UV LEDs,” Proc. SPIE 7617, 76171 (2010).
[Crossref]

Majewski, J.

O. Ambacher, J. Majewski, C. Miskys, A. Link, M. Hermann, M. Eickhoff, M. Stutzmann, F. Bernardini, V. Fiorentini, V. Tilak, B. Schaff, and L. F. Eastman, “Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures,” J. Phys.: Condens. Matter 14, 3399 (2002).

Makimoto, T.

Y. Taniyasu, M. Kasu, and T. Makimoto, “An aluminium nitride light-emitting diode with a wavelength of 210 nanometres,” Nature 441, 325–328 (2006).
[Crossref] [PubMed]

Maruska, H. P.

M. A. Khan, M. Shatalov, H. P. Maruska, H. M. Wang, and E. Kuokstis, “III-Nitride UV devices,” Jpn. J. Appl. Phys. 44, 7191 (2005).
[Crossref]

Mastro, M. A.

McMartin, D.

K. Nelson, D. McMartin, C. Yost, K. Runtz, and T. Ono, “Point-of-use water disinfection using UV light-emitting diodes to reduce bacterial contamination,” Environ. Sci. Pollution Res. 20, 5441–5448 (2013).
[Crossref]

Mehnke, F.

J. Rass, T. Kolbe, N. Lobo-Ploch, T. Wernicke, F. Mehnke, C. Kuhn, J. Enslin, M. Guttmann, C. Reich, A. Mogilatenko, J. Glaab, C. Stoelmacker, M. Lapeyrade, S. Einfeldt, M. Weyers, and M. Kneissl, “High-power UV-B LEDs with long lifetime,” Proc. SPIE 9363, 93631K (2015).
[Crossref]

Mensuali-Sodi, A.

E. Becatti, K. Petroni, D. Giuntini, A. Castagna, V. Calvenzani, G. Serra, A. Mensuali-Sodi, C. Tonelli, and A. Ranieri, “Solar UV-B radiation influences carotenoid accumulation of tomato fruit through both ethylene-dependent and -independent mechanisms,” J. Agric. Food Chem. 57, 10979–10989 (2009).
[Crossref] [PubMed]

Miller, M.

A. Allerman, M. Crawford, M. Miller, and S. Lee, “Growth and characterization of Mg-doped AlGaN-AlN short-period superlattices for deep-UV optoelectronic devices,” J. Crystal Growth 312, 756–761 (2010).
[Crossref]

Mishra, U. K.

J. F. Muth, J. H. Lee, I. K. Shmagin, R. M. Kolbas, H. C. Casey, B. P. Keller, U. K. Mishra, and S. P. DenBaars, “Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of gan obtained from transmission measurements,” Appl. Phys. Lett. 71, 2572–2574 (1997).
[Crossref]

Miskys, C.

O. Ambacher, J. Majewski, C. Miskys, A. Link, M. Hermann, M. Eickhoff, M. Stutzmann, F. Bernardini, V. Fiorentini, V. Tilak, B. Schaff, and L. F. Eastman, “Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures,” J. Phys.: Condens. Matter 14, 3399 (2002).

Mogilatenko, A.

J. Rass, T. Kolbe, N. Lobo-Ploch, T. Wernicke, F. Mehnke, C. Kuhn, J. Enslin, M. Guttmann, C. Reich, A. Mogilatenko, J. Glaab, C. Stoelmacker, M. Lapeyrade, S. Einfeldt, M. Weyers, and M. Kneissl, “High-power UV-B LEDs with long lifetime,” Proc. SPIE 9363, 93631K (2015).
[Crossref]

Moon, Y.-T.

Muth, J. F.

J. F. Muth, J. H. Lee, I. K. Shmagin, R. M. Kolbas, H. C. Casey, B. P. Keller, U. K. Mishra, and S. P. DenBaars, “Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of gan obtained from transmission measurements,” Appl. Phys. Lett. 71, 2572–2574 (1997).
[Crossref]

Nagasawa, Y.

C. Pernot, S. Fukahori, T. Inazu, T. Fujita, M. Kim, Y. Nagasawa, A. Hirano, M. Ippommatsu, M. Iwaya, S. Kamiyama, I. Akasaki, and H. Amano, “Development of high efficiency 255–355nm AlGaN-based light-emitting diodes,” Phys. Status Solidi A 208, 1594–1596 (2011).
[Crossref]

Nargelas, S.

Nelson, K.

K. Nelson, D. McMartin, C. Yost, K. Runtz, and T. Ono, “Point-of-use water disinfection using UV light-emitting diodes to reduce bacterial contamination,” Environ. Sci. Pollution Res. 20, 5441–5448 (2013).
[Crossref]

Nishida, T.

T. Nishida, N. Kobayashi, and T. Ban, “GaN-free transparent ultraviolet light-emitting diodes,” Appl. Phys. Lett. 82, 1–3 (2003).
[Crossref]

Noguchi, N.

H. Hirayama, S. Fujikawa, N. Noguchi, J. Norimatsu, T. Takano, K. Tsubaki, and N. Kamata, “222–282 nm AlGaN and InAlGaN-based deep-UV leds fabricated on high-quality AlN on sapphire,” Phys. Status Solidi A 206, 1176–1182 (2009).
[Crossref]

H. Hirayama, T. Yatabe, N. Noguchi, T. Ohashi, and N. Kamata, “231–261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire,” Appl. Phys. Lett. 91, 071901 (2007).
[Crossref]

Norimatsu, J.

H. Hirayama, S. Fujikawa, N. Noguchi, J. Norimatsu, T. Takano, K. Tsubaki, and N. Kamata, “222–282 nm AlGaN and InAlGaN-based deep-UV leds fabricated on high-quality AlN on sapphire,” Phys. Status Solidi A 206, 1176–1182 (2009).
[Crossref]

Nurmikko, A. V.

H. Xu, J. Zhang, K. M. Davitt, Y.-K. Song, and A. V. Nurmikko, “Application of blue-reen and ultraviolet micro-LEDs to biological imaging and detection,” J. Phys. D: Appl. Phys. 41, 094013 (2008).
[Crossref]

Ohashi, T.

H. Hirayama, T. Yatabe, N. Noguchi, T. Ohashi, and N. Kamata, “231–261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire,” Appl. Phys. Lett. 91, 071901 (2007).
[Crossref]

Ono, T.

K. Nelson, D. McMartin, C. Yost, K. Runtz, and T. Ono, “Point-of-use water disinfection using UV light-emitting diodes to reduce bacterial contamination,” Environ. Sci. Pollution Res. 20, 5441–5448 (2013).
[Crossref]

Park, H. J.

Passow, T.

T. Passow, R. Gutt, M. Maier, W. Pletschen, M. Kunzer, R. Schmidt, J. Wiegert, D. Luick, S. Liu, K. Khler, and J. Wagner, “Ni/Ag as low resistive ohmic contact to p-type AlGaN for UV LEDs,” Proc. SPIE 7617, 76171 (2010).
[Crossref]

Pavesi, L.

L. Pavesi, E. Tuncel, B. Zimmermann, and F. K. Reinhart, “Photoluminescence of disorder-induced localized states in GaAs/AlxGa1−xAs superlattices,” Phys. Rev. B 39, 7788–7795 (1989).
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Pearton, S.

S. Pearton, GaN and ZnO-based Materials and Devices (Springer Series in Materials Science, 2012), pp. 72.

Pearton, S. J.

Pernot, C.

C. Pernot, S. Fukahori, T. Inazu, T. Fujita, M. Kim, Y. Nagasawa, A. Hirano, M. Ippommatsu, M. Iwaya, S. Kamiyama, I. Akasaki, and H. Amano, “Development of high efficiency 255–355nm AlGaN-based light-emitting diodes,” Phys. Status Solidi A 208, 1594–1596 (2011).
[Crossref]

Petroni, K.

E. Becatti, K. Petroni, D. Giuntini, A. Castagna, V. Calvenzani, G. Serra, A. Mensuali-Sodi, C. Tonelli, and A. Ranieri, “Solar UV-B radiation influences carotenoid accumulation of tomato fruit through both ethylene-dependent and -independent mechanisms,” J. Agric. Food Chem. 57, 10979–10989 (2009).
[Crossref] [PubMed]

Pletschen, W.

T. Passow, R. Gutt, M. Maier, W. Pletschen, M. Kunzer, R. Schmidt, J. Wiegert, D. Luick, S. Liu, K. Khler, and J. Wagner, “Ni/Ag as low resistive ohmic contact to p-type AlGaN for UV LEDs,” Proc. SPIE 7617, 76171 (2010).
[Crossref]

Podlipskas, Žydrunas

Ranieri, A.

E. Becatti, K. Petroni, D. Giuntini, A. Castagna, V. Calvenzani, G. Serra, A. Mensuali-Sodi, C. Tonelli, and A. Ranieri, “Solar UV-B radiation influences carotenoid accumulation of tomato fruit through both ethylene-dependent and -independent mechanisms,” J. Agric. Food Chem. 57, 10979–10989 (2009).
[Crossref] [PubMed]

Rass, J.

J. Rass, T. Kolbe, N. Lobo-Ploch, T. Wernicke, F. Mehnke, C. Kuhn, J. Enslin, M. Guttmann, C. Reich, A. Mogilatenko, J. Glaab, C. Stoelmacker, M. Lapeyrade, S. Einfeldt, M. Weyers, and M. Kneissl, “High-power UV-B LEDs with long lifetime,” Proc. SPIE 9363, 93631K (2015).
[Crossref]

Reich, C.

J. Rass, T. Kolbe, N. Lobo-Ploch, T. Wernicke, F. Mehnke, C. Kuhn, J. Enslin, M. Guttmann, C. Reich, A. Mogilatenko, J. Glaab, C. Stoelmacker, M. Lapeyrade, S. Einfeldt, M. Weyers, and M. Kneissl, “High-power UV-B LEDs with long lifetime,” Proc. SPIE 9363, 93631K (2015).
[Crossref]

Reinhart, F. K.

L. Pavesi, E. Tuncel, B. Zimmermann, and F. K. Reinhart, “Photoluminescence of disorder-induced localized states in GaAs/AlxGa1−xAs superlattices,” Phys. Rev. B 39, 7788–7795 (1989).
[Crossref]

Ren, F.

Rodriguez, H.

M. Kneissl, T. Kolbe, C. Chua, V. Kueller, N. Lobo, J. Stellmach, A. Knauer, H. Rodriguez, S. Einfeldt, Z. Yang, N. M. Johnson, and M. Weyers, “Advances in group III-nitride-based deep UV light-emitting diode technology,” Semicond. Sci. Technol. 26, 014036 (2011).
[Crossref]

Runtz, K.

K. Nelson, D. McMartin, C. Yost, K. Runtz, and T. Ono, “Point-of-use water disinfection using UV light-emitting diodes to reduce bacterial contamination,” Environ. Sci. Pollution Res. 20, 5441–5448 (2013).
[Crossref]

Ryou, J.-H.

Ryu, H.-Y.

H.-Y. Ryu, I.-G. Choi, H.-S. Choi, and J.-I. Shim, “Investigation of light extraction efficiency in AlGaN deep-ultraviolet light-emitting diodes,” Appl. Phys. Express 6, 062101 (2013).
[Crossref]

Saxena, T.

Schaff, B.

O. Ambacher, J. Majewski, C. Miskys, A. Link, M. Hermann, M. Eickhoff, M. Stutzmann, F. Bernardini, V. Fiorentini, V. Tilak, B. Schaff, and L. F. Eastman, “Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures,” J. Phys.: Condens. Matter 14, 3399 (2002).

Schmidt, R.

T. Passow, R. Gutt, M. Maier, W. Pletschen, M. Kunzer, R. Schmidt, J. Wiegert, D. Luick, S. Liu, K. Khler, and J. Wagner, “Ni/Ag as low resistive ohmic contact to p-type AlGaN for UV LEDs,” Proc. SPIE 7617, 76171 (2010).
[Crossref]

Schubert, E. F.

H.-D. Kim, H.-M. An, K. H. Kim, S. J. Kim, C. S. Kim, J. Cho, E. F. Schubert, and T. G. Kim, “A universal method of producing transparent electrodes using wide-bandgap materials,” Adv. Funct. Mater. 24, 1575–1581 (2014).
[Crossref]

Serra, G.

E. Becatti, K. Petroni, D. Giuntini, A. Castagna, V. Calvenzani, G. Serra, A. Mensuali-Sodi, C. Tonelli, and A. Ranieri, “Solar UV-B radiation influences carotenoid accumulation of tomato fruit through both ethylene-dependent and -independent mechanisms,” J. Agric. Food Chem. 57, 10979–10989 (2009).
[Crossref] [PubMed]

Shatalov, M.

T. Saxena, M. Shur, S. Nargelas, Žydrūnas Podlipskas, R. Aleksiejūnas, G. Tamulaitis, M. Shatalov, J. Yang, and R. Gaska, “Dynamics of nonequilibrium carrier decay in AlGaN epitaxial layers with high aluminum content,” Opt. Express 23, 19646–19655 (2015).
[Crossref] [PubMed]

M. Shatalov, J. Yang, Y. Bilenko, M. Shur, and R. Gaska, “AlGaN deep ultraviolet LEDs with external quantum efficiency over 10%,” Lasers Electro-Opt. Pacific Rim 5, 1–2 (2013).

M. A. Khan, M. Shatalov, H. P. Maruska, H. M. Wang, and E. Kuokstis, “III-Nitride UV devices,” Jpn. J. Appl. Phys. 44, 7191 (2005).
[Crossref]

Shim, J.-I.

H.-Y. Ryu, I.-G. Choi, H.-S. Choi, and J.-I. Shim, “Investigation of light extraction efficiency in AlGaN deep-ultraviolet light-emitting diodes,” Appl. Phys. Express 6, 062101 (2013).
[Crossref]

Shivaraman, R.

T.-J. Yang, R. Shivaraman, J. S. Speck, and Y.-R. Wu, “The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior,” J. Appl. Phys. 116, 113104 (2014).
[Crossref]

Y.-R. Wu, R. Shivaraman, K.-C. Wang, and J. S. Speck, “Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure,” Appl. Phys. Lett. 101, 083505 (2012).
[Crossref]

Shmagin, I. K.

J. F. Muth, J. H. Lee, I. K. Shmagin, R. M. Kolbas, H. C. Casey, B. P. Keller, U. K. Mishra, and S. P. DenBaars, “Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of gan obtained from transmission measurements,” Appl. Phys. Lett. 71, 2572–2574 (1997).
[Crossref]

Shur, M.

Singh, J.

Y.-R. Wu, M. Singh, and J. Singh, “Gate leakage suppression and contact engineering in nitride heterostructures,” J. Appl. Phys. 94, 5826–5831 (2003).
[Crossref]

J. Singh, Electronic and Optoelectronic Properties of Semiconductor Structures (Cambridge University, 2003).

Singh, M.

Y.-R. Wu, M. Singh, and J. Singh, “Gate leakage suppression and contact engineering in nitride heterostructures,” J. Appl. Phys. 94, 5826–5831 (2003).
[Crossref]

Song, Y.-K.

H. Xu, J. Zhang, K. M. Davitt, Y.-K. Song, and A. V. Nurmikko, “Application of blue-reen and ultraviolet micro-LEDs to biological imaging and detection,” J. Phys. D: Appl. Phys. 41, 094013 (2008).
[Crossref]

Speck, J. S.

T.-J. Yang, R. Shivaraman, J. S. Speck, and Y.-R. Wu, “The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior,” J. Appl. Phys. 116, 113104 (2014).
[Crossref]

Y.-R. Wu, R. Shivaraman, K.-C. Wang, and J. S. Speck, “Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure,” Appl. Phys. Lett. 101, 083505 (2012).
[Crossref]

Stellmach, J.

M. Kneissl, T. Kolbe, C. Chua, V. Kueller, N. Lobo, J. Stellmach, A. Knauer, H. Rodriguez, S. Einfeldt, Z. Yang, N. M. Johnson, and M. Weyers, “Advances in group III-nitride-based deep UV light-emitting diode technology,” Semicond. Sci. Technol. 26, 014036 (2011).
[Crossref]

Stoelmacker, C.

J. Rass, T. Kolbe, N. Lobo-Ploch, T. Wernicke, F. Mehnke, C. Kuhn, J. Enslin, M. Guttmann, C. Reich, A. Mogilatenko, J. Glaab, C. Stoelmacker, M. Lapeyrade, S. Einfeldt, M. Weyers, and M. Kneissl, “High-power UV-B LEDs with long lifetime,” Proc. SPIE 9363, 93631K (2015).
[Crossref]

Stutzmann, M.

O. Ambacher, J. Majewski, C. Miskys, A. Link, M. Hermann, M. Eickhoff, M. Stutzmann, F. Bernardini, V. Fiorentini, V. Tilak, B. Schaff, and L. F. Eastman, “Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures,” J. Phys.: Condens. Matter 14, 3399 (2002).

Takano, T.

H. Hirayama, S. Fujikawa, N. Noguchi, J. Norimatsu, T. Takano, K. Tsubaki, and N. Kamata, “222–282 nm AlGaN and InAlGaN-based deep-UV leds fabricated on high-quality AlN on sapphire,” Phys. Status Solidi A 206, 1176–1182 (2009).
[Crossref]

Tamulaitis, G.

Taniyasu, Y.

Y. Taniyasu, M. Kasu, and T. Makimoto, “An aluminium nitride light-emitting diode with a wavelength of 210 nanometres,” Nature 441, 325–328 (2006).
[Crossref] [PubMed]

Tilak, V.

O. Ambacher, J. Majewski, C. Miskys, A. Link, M. Hermann, M. Eickhoff, M. Stutzmann, F. Bernardini, V. Fiorentini, V. Tilak, B. Schaff, and L. F. Eastman, “Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures,” J. Phys.: Condens. Matter 14, 3399 (2002).

Tonelli, C.

E. Becatti, K. Petroni, D. Giuntini, A. Castagna, V. Calvenzani, G. Serra, A. Mensuali-Sodi, C. Tonelli, and A. Ranieri, “Solar UV-B radiation influences carotenoid accumulation of tomato fruit through both ethylene-dependent and -independent mechanisms,” J. Agric. Food Chem. 57, 10979–10989 (2009).
[Crossref] [PubMed]

Toyoda, S.

H. Hirayama, N. Maeda, S. Fujikawa, S. Toyoda, and N. Kamata, “Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes,” Jpn. J. Appl. Phys. 53, 100209 (2014).
[Crossref]

Tsubaki, K.

H. Hirayama, S. Fujikawa, N. Noguchi, J. Norimatsu, T. Takano, K. Tsubaki, and N. Kamata, “222–282 nm AlGaN and InAlGaN-based deep-UV leds fabricated on high-quality AlN on sapphire,” Phys. Status Solidi A 206, 1176–1182 (2009).
[Crossref]

Tuncel, E.

L. Pavesi, E. Tuncel, B. Zimmermann, and F. K. Reinhart, “Photoluminescence of disorder-induced localized states in GaAs/AlxGa1−xAs superlattices,” Phys. Rev. B 39, 7788–7795 (1989).
[Crossref]

Wagner, J.

T. Passow, R. Gutt, M. Maier, W. Pletschen, M. Kunzer, R. Schmidt, J. Wiegert, D. Luick, S. Liu, K. Khler, and J. Wagner, “Ni/Ag as low resistive ohmic contact to p-type AlGaN for UV LEDs,” Proc. SPIE 7617, 76171 (2010).
[Crossref]

Wang, H. M.

M. A. Khan, M. Shatalov, H. P. Maruska, H. M. Wang, and E. Kuokstis, “III-Nitride UV devices,” Jpn. J. Appl. Phys. 44, 7191 (2005).
[Crossref]

Wang, K.-C.

Y.-R. Wu, R. Shivaraman, K.-C. Wang, and J. S. Speck, “Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure,” Appl. Phys. Lett. 101, 083505 (2012).
[Crossref]

Wernicke, T.

J. Rass, T. Kolbe, N. Lobo-Ploch, T. Wernicke, F. Mehnke, C. Kuhn, J. Enslin, M. Guttmann, C. Reich, A. Mogilatenko, J. Glaab, C. Stoelmacker, M. Lapeyrade, S. Einfeldt, M. Weyers, and M. Kneissl, “High-power UV-B LEDs with long lifetime,” Proc. SPIE 9363, 93631K (2015).
[Crossref]

Weyers, M.

J. Rass, T. Kolbe, N. Lobo-Ploch, T. Wernicke, F. Mehnke, C. Kuhn, J. Enslin, M. Guttmann, C. Reich, A. Mogilatenko, J. Glaab, C. Stoelmacker, M. Lapeyrade, S. Einfeldt, M. Weyers, and M. Kneissl, “High-power UV-B LEDs with long lifetime,” Proc. SPIE 9363, 93631K (2015).
[Crossref]

M. Kneissl, T. Kolbe, C. Chua, V. Kueller, N. Lobo, J. Stellmach, A. Knauer, H. Rodriguez, S. Einfeldt, Z. Yang, N. M. Johnson, and M. Weyers, “Advances in group III-nitride-based deep UV light-emitting diode technology,” Semicond. Sci. Technol. 26, 014036 (2011).
[Crossref]

Wiegert, J.

T. Passow, R. Gutt, M. Maier, W. Pletschen, M. Kunzer, R. Schmidt, J. Wiegert, D. Luick, S. Liu, K. Khler, and J. Wagner, “Ni/Ag as low resistive ohmic contact to p-type AlGaN for UV LEDs,” Proc. SPIE 7617, 76171 (2010).
[Crossref]

Wu, Y.-R.

T.-J. Yang, R. Shivaraman, J. S. Speck, and Y.-R. Wu, “The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior,” J. Appl. Phys. 116, 113104 (2014).
[Crossref]

Y.-R. Wu, R. Shivaraman, K.-C. Wang, and J. S. Speck, “Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure,” Appl. Phys. Lett. 101, 083505 (2012).
[Crossref]

Y.-R. Wu, C. Chiu, C.-Y. Chang, P. Yu, and H.-C. Kuo, “Size-dependent strain relaxation and optical characteristics of InGaN/GaN nanorod LEDs,” IEEE J. Sel. Top. Quantum Electron. 15, 1226–1233 (2009).
[Crossref]

Y.-R. Wu, M. Singh, and J. Singh, “Gate leakage suppression and contact engineering in nitride heterostructures,” J. Appl. Phys. 94, 5826–5831 (2003).
[Crossref]

Xu, H.

H. Xu, J. Zhang, K. M. Davitt, Y.-K. Song, and A. V. Nurmikko, “Application of blue-reen and ultraviolet micro-LEDs to biological imaging and detection,” J. Phys. D: Appl. Phys. 41, 094013 (2008).
[Crossref]

Yang, G.

Yang, J.

Yang, T.-J.

T.-J. Yang, R. Shivaraman, J. S. Speck, and Y.-R. Wu, “The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior,” J. Appl. Phys. 116, 113104 (2014).
[Crossref]

Yang, W.

W. Yang, J. Li, Y. Zhang, P.-K. Huang, T.-C. Lu, H.-C. Kuo, S. Li, X. Yang, H. Chen, D. Liu, and J. Kang, “High density GaN/AlN quantum dots for deep uv led with high quantum efficiency and temperature stability,” Sci. Rep. 4, 51–66 (2014).

Yang, X.

W. Yang, J. Li, Y. Zhang, P.-K. Huang, T.-C. Lu, H.-C. Kuo, S. Li, X. Yang, H. Chen, D. Liu, and J. Kang, “High density GaN/AlN quantum dots for deep uv led with high quantum efficiency and temperature stability,” Sci. Rep. 4, 51–66 (2014).

Yang, Z.

M. Kneissl, T. Kolbe, C. Chua, V. Kueller, N. Lobo, J. Stellmach, A. Knauer, H. Rodriguez, S. Einfeldt, Z. Yang, N. M. Johnson, and M. Weyers, “Advances in group III-nitride-based deep UV light-emitting diode technology,” Semicond. Sci. Technol. 26, 014036 (2011).
[Crossref]

Yatabe, T.

H. Hirayama, T. Yatabe, N. Noguchi, T. Ohashi, and N. Kamata, “231–261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire,” Appl. Phys. Lett. 91, 071901 (2007).
[Crossref]

Yost, C.

K. Nelson, D. McMartin, C. Yost, K. Runtz, and T. Ono, “Point-of-use water disinfection using UV light-emitting diodes to reduce bacterial contamination,” Environ. Sci. Pollution Res. 20, 5441–5448 (2013).
[Crossref]

Yu, P.

Y.-R. Wu, C. Chiu, C.-Y. Chang, P. Yu, and H.-C. Kuo, “Size-dependent strain relaxation and optical characteristics of InGaN/GaN nanorod LEDs,” IEEE J. Sel. Top. Quantum Electron. 15, 1226–1233 (2009).
[Crossref]

Zhang, J.

H. Xu, J. Zhang, K. M. Davitt, Y.-K. Song, and A. V. Nurmikko, “Application of blue-reen and ultraviolet micro-LEDs to biological imaging and detection,” J. Phys. D: Appl. Phys. 41, 094013 (2008).
[Crossref]

Zhang, Y.

W. Yang, J. Li, Y. Zhang, P.-K. Huang, T.-C. Lu, H.-C. Kuo, S. Li, X. Yang, H. Chen, D. Liu, and J. Kang, “High density GaN/AlN quantum dots for deep uv led with high quantum efficiency and temperature stability,” Sci. Rep. 4, 51–66 (2014).

Zimmermann, B.

L. Pavesi, E. Tuncel, B. Zimmermann, and F. K. Reinhart, “Photoluminescence of disorder-induced localized states in GaAs/AlxGa1−xAs superlattices,” Phys. Rev. B 39, 7788–7795 (1989).
[Crossref]

Adv. Funct. Mater. (1)

H.-D. Kim, H.-M. An, K. H. Kim, S. J. Kim, C. S. Kim, J. Cho, E. F. Schubert, and T. G. Kim, “A universal method of producing transparent electrodes using wide-bandgap materials,” Adv. Funct. Mater. 24, 1575–1581 (2014).
[Crossref]

Appl. Phys. Express (1)

H.-Y. Ryu, I.-G. Choi, H.-S. Choi, and J.-I. Shim, “Investigation of light extraction efficiency in AlGaN deep-ultraviolet light-emitting diodes,” Appl. Phys. Express 6, 062101 (2013).
[Crossref]

Appl. Phys. Lett. (4)

J. F. Muth, J. H. Lee, I. K. Shmagin, R. M. Kolbas, H. C. Casey, B. P. Keller, U. K. Mishra, and S. P. DenBaars, “Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of gan obtained from transmission measurements,” Appl. Phys. Lett. 71, 2572–2574 (1997).
[Crossref]

Y.-R. Wu, R. Shivaraman, K.-C. Wang, and J. S. Speck, “Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure,” Appl. Phys. Lett. 101, 083505 (2012).
[Crossref]

T. Nishida, N. Kobayashi, and T. Ban, “GaN-free transparent ultraviolet light-emitting diodes,” Appl. Phys. Lett. 82, 1–3 (2003).
[Crossref]

H. Hirayama, T. Yatabe, N. Noguchi, T. Ohashi, and N. Kamata, “231–261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire,” Appl. Phys. Lett. 91, 071901 (2007).
[Crossref]

Environ. Sci. Pollution Res. (1)

K. Nelson, D. McMartin, C. Yost, K. Runtz, and T. Ono, “Point-of-use water disinfection using UV light-emitting diodes to reduce bacterial contamination,” Environ. Sci. Pollution Res. 20, 5441–5448 (2013).
[Crossref]

IEEE J. Sel. Top. Quantum Electron. (1)

Y.-R. Wu, C. Chiu, C.-Y. Chang, P. Yu, and H.-C. Kuo, “Size-dependent strain relaxation and optical characteristics of InGaN/GaN nanorod LEDs,” IEEE J. Sel. Top. Quantum Electron. 15, 1226–1233 (2009).
[Crossref]

J. Agric. Food Chem. (1)

E. Becatti, K. Petroni, D. Giuntini, A. Castagna, V. Calvenzani, G. Serra, A. Mensuali-Sodi, C. Tonelli, and A. Ranieri, “Solar UV-B radiation influences carotenoid accumulation of tomato fruit through both ethylene-dependent and -independent mechanisms,” J. Agric. Food Chem. 57, 10979–10989 (2009).
[Crossref] [PubMed]

J. Appl. Phys. (2)

Y.-R. Wu, M. Singh, and J. Singh, “Gate leakage suppression and contact engineering in nitride heterostructures,” J. Appl. Phys. 94, 5826–5831 (2003).
[Crossref]

T.-J. Yang, R. Shivaraman, J. S. Speck, and Y.-R. Wu, “The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior,” J. Appl. Phys. 116, 113104 (2014).
[Crossref]

J. Crystal Growth (1)

A. Allerman, M. Crawford, M. Miller, and S. Lee, “Growth and characterization of Mg-doped AlGaN-AlN short-period superlattices for deep-UV optoelectronic devices,” J. Crystal Growth 312, 756–761 (2010).
[Crossref]

J. Phys. D: Appl. Phys. (1)

H. Xu, J. Zhang, K. M. Davitt, Y.-K. Song, and A. V. Nurmikko, “Application of blue-reen and ultraviolet micro-LEDs to biological imaging and detection,” J. Phys. D: Appl. Phys. 41, 094013 (2008).
[Crossref]

J. Phys.: Condens. Matter (1)

O. Ambacher, J. Majewski, C. Miskys, A. Link, M. Hermann, M. Eickhoff, M. Stutzmann, F. Bernardini, V. Fiorentini, V. Tilak, B. Schaff, and L. F. Eastman, “Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures,” J. Phys.: Condens. Matter 14, 3399 (2002).

Jpn. J. Appl. Phys. (2)

H. Hirayama, N. Maeda, S. Fujikawa, S. Toyoda, and N. Kamata, “Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes,” Jpn. J. Appl. Phys. 53, 100209 (2014).
[Crossref]

M. A. Khan, M. Shatalov, H. P. Maruska, H. M. Wang, and E. Kuokstis, “III-Nitride UV devices,” Jpn. J. Appl. Phys. 44, 7191 (2005).
[Crossref]

Lab Chip (1)

M. Erickstad, E. Gutierrez, and A. Groisman, “A low-cost low-maintenance ultraviolet lithography light source based on light-emitting diodes,” Lab Chip 15, 57–61 (2015).
[Crossref]

Lasers Electro-Opt. Pacific Rim (1)

M. Shatalov, J. Yang, Y. Bilenko, M. Shur, and R. Gaska, “AlGaN deep ultraviolet LEDs with external quantum efficiency over 10%,” Lasers Electro-Opt. Pacific Rim 5, 1–2 (2013).

Nat. Photonics (1)

M. A. Khan, K. Balakrishnan, and T. Katona, “Ultraviolet light-emitting diodes based on group three nitrides,” Nat. Photonics 2, 77–84 (2008).
[Crossref]

Nature (1)

Y. Taniyasu, M. Kasu, and T. Makimoto, “An aluminium nitride light-emitting diode with a wavelength of 210 nanometres,” Nature 441, 325–328 (2006).
[Crossref] [PubMed]

Opt. Express (3)

Phys. Rev. B (1)

L. Pavesi, E. Tuncel, B. Zimmermann, and F. K. Reinhart, “Photoluminescence of disorder-induced localized states in GaAs/AlxGa1−xAs superlattices,” Phys. Rev. B 39, 7788–7795 (1989).
[Crossref]

Phys. Status Solidi A (3)

H. Hirayama, S. Fujikawa, N. Noguchi, J. Norimatsu, T. Takano, K. Tsubaki, and N. Kamata, “222–282 nm AlGaN and InAlGaN-based deep-UV leds fabricated on high-quality AlN on sapphire,” Phys. Status Solidi A 206, 1176–1182 (2009).
[Crossref]

C. Pernot, S. Fukahori, T. Inazu, T. Fujita, M. Kim, Y. Nagasawa, A. Hirano, M. Ippommatsu, M. Iwaya, S. Kamiyama, I. Akasaki, and H. Amano, “Development of high efficiency 255–355nm AlGaN-based light-emitting diodes,” Phys. Status Solidi A 208, 1594–1596 (2011).
[Crossref]

M. A. Khan, “Algan multiple quantum well based deep uv leds and their applications,” Phys. Status Solidi A 203, 1764–1770 (2006).
[Crossref]

Proc. SPIE (2)

J. Rass, T. Kolbe, N. Lobo-Ploch, T. Wernicke, F. Mehnke, C. Kuhn, J. Enslin, M. Guttmann, C. Reich, A. Mogilatenko, J. Glaab, C. Stoelmacker, M. Lapeyrade, S. Einfeldt, M. Weyers, and M. Kneissl, “High-power UV-B LEDs with long lifetime,” Proc. SPIE 9363, 93631K (2015).
[Crossref]

T. Passow, R. Gutt, M. Maier, W. Pletschen, M. Kunzer, R. Schmidt, J. Wiegert, D. Luick, S. Liu, K. Khler, and J. Wagner, “Ni/Ag as low resistive ohmic contact to p-type AlGaN for UV LEDs,” Proc. SPIE 7617, 76171 (2010).
[Crossref]

Sci. Rep. (1)

W. Yang, J. Li, Y. Zhang, P.-K. Huang, T.-C. Lu, H.-C. Kuo, S. Li, X. Yang, H. Chen, D. Liu, and J. Kang, “High density GaN/AlN quantum dots for deep uv led with high quantum efficiency and temperature stability,” Sci. Rep. 4, 51–66 (2014).

Semicond. Sci. Technol. (1)

M. Kneissl, T. Kolbe, C. Chua, V. Kueller, N. Lobo, J. Stellmach, A. Knauer, H. Rodriguez, S. Einfeldt, Z. Yang, N. M. Johnson, and M. Weyers, “Advances in group III-nitride-based deep UV light-emitting diode technology,” Semicond. Sci. Technol. 26, 014036 (2011).
[Crossref]

Other (2)

S. Pearton, GaN and ZnO-based Materials and Devices (Springer Series in Materials Science, 2012), pp. 72.

J. Singh, Electronic and Optoelectronic Properties of Semiconductor Structures (Cambridge University, 2003).

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Figures (9)

Fig. 1
Fig. 1

Schematically views of (a) a lateral AlGaN LED structure with n pairs of AlxGa1−xN / AlyGa1−yN SL structure being used as the p-contact layer and (b) the definition of the effective bandgaps.

Fig. 2
Fig. 2

Band diagram of a 20 pairs AlGaN SL structure with alternating Al0.3Ga0.7N QW and Al0.6Ga0.4N QB layers, the thickness of each QW and QB layer is 1 nm.

Fig. 3
Fig. 3

The calculated absorption coefficient of GaN / Al0.4Ga0.6N, Al0.3Ga0.7N / Al0.6Ga0.4N, and Al0.6Ga0.4N / Al0.9Ga0.1N SL structures as a function of photon wavelength.

Fig. 4
Fig. 4

Eg,abs (a) and Eg,cont (b) versus QB thickness of GaN / Al0.4Ga0.6N, Al0.3Ga0.7N / Al0.6Ga0.4N and Al0.6Ga0.4N / Al0.9Ga0.1N SL structures with QW thickness kept at 0.5 nm.

Fig. 5
Fig. 5

Eg,abs (a) and Eg,cont (b) versus QW thickness of GaN / Al0.4Ga0.6N, Al0.3Ga0.7N / Al0.6Ga0.4N and Al0.6Ga0.4N / Al0.9Ga0.1N SL structures with QB thickness kept at 0.5 nm.

Fig. 6
Fig. 6

Eg,abs (a) and Eg,cont (b) as a function of composition x and y in AlxGa1−xN / AlyGa1−yN SL structure with 20 periods, each QW and QB layer is 0.5 nm.

Fig. 7
Fig. 7

Eg,abs (a) and Eg,cont (b) as a function of composition x and y in AlxGa1−xN / AlyGa1−yN SL structure with 20 periods. QW thickness and QB thickness are 0.5 nm and 1 nm, respectively.

Fig. 8
Fig. 8

Eg,abs (a) and Eg,cont (b) as a function of composition x and y in AlxGa1−xN / AlyGa1−yN SL structure with 20 periods. QW thickness and QB thickness are 0.5 nm and 1.5 nm, respectively.

Fig. 9
Fig. 9

Eg,abs (a) and Eg,cont (b) as a function of composition x and y in AlxGa1−xN / AlyGa1−yN SL structure with 20 periods. QW thickness and QB thickness are 1.0 nm and 1.0 nm, respectively.

Tables (1)

Tables Icon

Table 1 Elastic constants and piezoelectric constants in GaN and AlN [31].

Equations (8)

Equations on this page are rendered with MathJax. Learn more.

( ε V ) = n p + N A N D + ,
2 2 d d z [ 1 m * d ψ ( z ) d z ] + E c , v ψ ( z ) = E ψ ( z ) ,
ε x x = ε y y = a S a L a L ,
ε z z = 2 c 13 c 33 ε x x ,
P e z = e 33 ε z z + e 31 ( ε x x + ε y y ) ,
Δ P = P sp ( QW ) + P e z ( QW ) P sp ( QB ) P e z ( QB ) ,
α ( ω ) = π e 2 m 0 2 c n r ε 0 1 ω | a p if | 2 N 2 D ( ω ) W n , m f nm Erf ( E nm ω ) ,
f nm = | v g v v m | g c n | 2 ,

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