Abstract

Molybdenum disulfide (MoS2) as a promising 2D material has attracted extensive attentions due to its unique physical, optical and electrical properties. In this work, we demonstrate an infrared (IR) light gated MoS2 transistor through a device composed of MoS2 monolayer and a ferroelectric single crystal Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT). With a monolayer MoS2 onto the top surface of (111) PMN-PT crystal, the drain current of MoS2 channel can be modulated with infrared illumination and this modulation process is reversible. Thus, the transistor can work as a new kind of IR photodetector with a high IR responsivity of 114%/Wcm−2. The IR response of MoS2 transistor is attributed to the polarization change of PMN-PT single crystal induced by the pyroelectric effect which results in a field effect. Our result promises the application of MoS2 2D material in infrared optoelectronic devices. Combining with the intrinsic photocurrent feature of MoS2 in the visible range, the MoS2 on ferroelectric single crystal may be sensitive to a broadband wavelength of light.

© 2015 Optical Society of America

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    [Crossref] [PubMed]
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    [Crossref] [PubMed]
  21. C. Zhou, X. Wang, S. Raju, Z. Lin, D. Villaroman, B. Huang, H. L. W. Chan, M. Chan, and Y. Chai, “Low voltage and high ON/OFF ratio field-effect transistors based on CVD MoS2 and ultra high-k gate dielectric PZT,” Nanoscale 7(19), 8695–8700 (2015).
    [Crossref] [PubMed]
  22. Y. X. Tang, X. Y. Zhao, X. Q. Feng, W. Q. Jin, and H. S. Luo, “Pyroelectric properties of [111]-oriented Pb(Mg1/3Nb2/3)O3-PbTiO3 crystals,” Appl. Phys. Lett. 86(8), 082901 (2005).
    [Crossref]
  23. X. Wang, H. Feng, Y. Wu, and L. Jiao, “Controlled synthesis of highly crystalline MoS2 flakes by chemical vapor deposition,” J. Am. Chem. Soc. 135(14), 5304–5307 (2013).
    [Crossref] [PubMed]
  24. N. Y. Chan, M. Zhao, N. Wang, K. Au, J. Wang, L. W. H. Chan, and J. Dai, “Palladium nanoparticle enhanced giant photoresponse at LaAlO3/SrTiO3 two-dimensional electron gas heterostructures,” ACS Nano 7(10), 8673–8679 (2013).
    [Crossref] [PubMed]
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    [Crossref] [PubMed]
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    [Crossref]
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    [Crossref] [PubMed]
  28. L. Liu, X. Li, X. Wu, Y. Wang, W. Di, D. Lin, X. Zhao, H. S. Luo, and N. Neumann, “Dielectric, ferroelectric, and pyroelectric characterization of Mn-doped 0.74Pb(Mg1/3Nb2/3)O3-0.26PbTiO3 crystals for infrared detection applications,” Appl. Phys. Lett. 95(19), 192903 (2009).
    [Crossref]
  29. N. N. Luo, Y. Y. Li, Z. G. Xia, and Q. Li, “Progress in lead-based ferroelectric and antiferroelectric single crystals: composition modification, crystal growth and properties,” Cyrst. Eng. Comm. 14(14), 4547–4556 (2012).
    [Crossref]
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    [Crossref]
  31. Y. J. Ko, Y. K. Park, B. K. Yun, M. Lee, and J. H. Jung, “High pyroelectric power generation of 0.7 Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 single crystal,” Curr. Appl. Phys. 14(11), 1486–1491 (2014).
    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref] [PubMed]

2015 (9)

S. Das, M. Demarteau, and A. Roelofs, “Nb-doped single crystalline MoS2 field effect transistor,” Appl. Phys. Lett. 106(17), 173506 (2015).
[Crossref]

H. Song, S. Jiang, D. Ji, X. Zeng, N. Zhang, K. Liu, C. Wang, Y. Xu, and Q. Gan, “Nanocavity absorption enhancement for two-dimensional material monolayer systems,” Opt. Express 23(6), 7120–7130 (2015).
[Crossref] [PubMed]

X. H. Zhang, X. H. Huang, M. Q. Xue, X. Ye, W. N. Lei, H. Tang, and C. S. Li, “Hydrothermal synthesis and characterization of 3D flower-like MoS2 microspheres,” Mater. Lett. 148, 67–70 (2015).
[Crossref]

K. Wu, X. Zhang, J. Wang, X. Li, and J. Chen, “WS₂ as a saturable absorber for ultrafast photonic applications of mode-locked and Q-switched lasers,” Opt. Express 23(9), 11453–11461 (2015).
[Crossref] [PubMed]

Z. P. Ling, R. Yang, J. W. Chai, S. J. Wang, W. S. Leong, Y. Tong, D. Lei, Q. Zhou, X. Gong, D. Z. Chi, and K. W. Ang, “Large-scale two-dimensional MoS₂ photodetectors by magnetron sputtering,” Opt. Express 23(10), 13580–13586 (2015).
[Crossref] [PubMed]

B. Miller, E. Parzinger, A. Vernickel, A. W. Holleitner, and U. Wurstbauer, “Photogating of mono- and few-layer MoS2,” Appl. Phys. Lett. 106(12), 122103 (2015).
[Crossref]

W. Wang, A. Klots, D. Prasai, Y. Yang, K. I. Bolotin, and J. Valentine, “Hot electron-based near-infrared photodetection using bilayer MoS2,” Nano Lett. 15(11), 7440–7444 (2015).
[Crossref] [PubMed]

C. Zhou, X. Wang, S. Raju, Z. Lin, D. Villaroman, B. Huang, H. L. W. Chan, M. Chan, and Y. Chai, “Low voltage and high ON/OFF ratio field-effect transistors based on CVD MoS2 and ultra high-k gate dielectric PZT,” Nanoscale 7(19), 8695–8700 (2015).
[Crossref] [PubMed]

T. Q. Trung, S. Ramasundaram, and N. E. Lee, “Infrared detection using transparent and flexible field-effect transistor array with solution processable nanocomposite channel of reduced graphene oxide and P(VDF-TrFE),” Adv. Funct. Mater. 25(11), 1745–1754 (2015).
[Crossref]

2014 (7)

C. R. Bowen, H. A. Kim, P. M. Weaver, and S. Dunn, “Piezoelectric and ferroelectric materials and structures for energy harvesting applications,” Energy Environ. Sci. 7(1), 25–44 (2014).
[Crossref]

Y. J. Ko, Y. K. Park, B. K. Yun, M. Lee, and J. H. Jung, “High pyroelectric power generation of 0.7 Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 single crystal,” Curr. Appl. Phys. 14(11), 1486–1491 (2014).
[Crossref]

L. Li, X. Zhao, X. Li, B. Ren, Q. Xu, Z. Liang, W. Di, L. Yang, H. Luo, X. Shao, J. Fang, N. Neumann, and J. Jiao, “Scale effects of low-dimensional relaxor ferroelectric single crystals and their application in novel pyroelectric infrared detectors,” Adv. Mater. 26(16), 2580–2585 (2014).
[Crossref] [PubMed]

S. Najmaei, X. Zou, D. Er, J. Li, Z. Jin, W. Gao, Q. Zhang, S. Park, L. Ge, S. Lei, J. Kono, V. B. Shenoy, B. I. Yakobson, A. George, P. M. Ajayan, and J. Lou, “Tailoring the physical properties of molybdenum disulfide monolayers by control of interfacial chemistry,” Nano Lett. 14(3), 1354–1361 (2014).
[Crossref] [PubMed]

M. L. Tsai, S. H. Su, J. K. Chang, D. S. Tsai, C. H. Chen, C. I. Wu, L. J. Li, L. J. Chen, and J. H. He, “Monolayer MoS2 heterojunction solar cells,” ACS Nano 8(8), 8317–8322 (2014).
[Crossref] [PubMed]

W. Zhang, C. P. Chuu, J. K. Huang, C. H. Chen, M. L. Tsai, Y. H. Chang, C. T. Liang, Y. Z. Chen, Y. L. Chueh, J. H. He, M. Y. Chou, and L. J. Li, “Ultrahigh-gain photodetectors based on atomically thin graphene-MoS2 heterostructures,” Sci. Rep. 4, 3826 (2014).
[PubMed]

R. I. Woodward, E. J. R. Kelleher, R. C. T. Howe, G. Hu, F. Torrisi, T. Hasan, S. V. Popov, and J. R. Taylor, “Tunable Q-switched fiber laser based on saturable edge-state absorption in few-layer molybdenum disulfide (MoS₂),” Opt. Express 22(25), 31113–31122 (2014).
[Crossref] [PubMed]

2013 (8)

J. Yoon, W. Park, G. Y. Bae, Y. Kim, H. S. Jang, Y. Hyun, S. K. Lim, Y. H. Kahng, W. K. Hong, B. H. Lee, and H. C. Ko, “Highly flexible and transparent multilayer MoS2 transistors with graphene electrodes,” Small 9(19), 3295–3300 (2013).
[Crossref] [PubMed]

D. S. Tsai, K. K. Liu, D. H. Lien, M. L. Tsai, C. F. Kang, C. A. Lin, L. J. Li, and J. H. He, “Few-Layer MoS2 with high broadband Photogain and fast optical switching for use in harsh environments,” ACS Nano 7(5), 3905–3911 (2013).
[Crossref] [PubMed]

O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, and A. Kis, “Ultrasensitive photodetectors based on monolayer MoS2.,” Nat. Nanotechnol. 8(7), 497–501 (2013).
[Crossref] [PubMed]

Y. Li, C. Y. Xu, P. Hu, and L. Zhen, “Carrier control of MoS2 nanoflakes by functional self-assembled monolayers,” ACS Nano 7(9), 7795–7804 (2013).
[Crossref] [PubMed]

S. Tongay, J. Zhou, C. Ataca, J. Liu, J. S. Kang, T. S. Matthews, L. You, J. Li, J. C. Grossman, and J. Wu, “Broad-range modulation of light emission in two-dimensional semiconductors by molecular physisorption gating,” Nano Lett. 13(6), 2831–2836 (2013).
[Crossref] [PubMed]

W. Park, J. H. Yang, C. G. Kang, Y. G. Lee, H. J. Hwang, C. Cho, S. K. Lim, S. C. Kang, W. K. Hong, S. K. Lee, S. Lee, and B. H. Lee, “Characteristics of a pressure sensitive touch sensor using a piezoelectric PVDF-TrFE/MoS2 stack,” Nanotechnology 24(47), 475501 (2013).
[Crossref] [PubMed]

X. Wang, H. Feng, Y. Wu, and L. Jiao, “Controlled synthesis of highly crystalline MoS2 flakes by chemical vapor deposition,” J. Am. Chem. Soc. 135(14), 5304–5307 (2013).
[Crossref] [PubMed]

N. Y. Chan, M. Zhao, N. Wang, K. Au, J. Wang, L. W. H. Chan, and J. Dai, “Palladium nanoparticle enhanced giant photoresponse at LaAlO3/SrTiO3 two-dimensional electron gas heterostructures,” ACS Nano 7(10), 8673–8679 (2013).
[Crossref] [PubMed]

2012 (6)

H. Li, Q. Zhang, C. C. R. Yap, B. K. Tay, T. H. T. Edwin, A. Olivier, and D. Baillargeat, “From bulk to monolayer MoS2: evolution of Raman scattering,” Adv. Funct. Mater. 22(7), 1385–1390 (2012).
[Crossref]

C.-Y. Hsieh, Y.-T. Chen, W.-J. Tan, Y.-F. Chen, W. Y. Shih, and W.-H. Shih, “Graphene- lead zirconate titanate optothermal field effect transistors,” Appl. Phys. Lett. 100(11), 113507 (2012).
[Crossref]

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6(1), 74–80 (2012).
[Crossref] [PubMed]

N. N. Luo, Y. Y. Li, Z. G. Xia, and Q. Li, “Progress in lead-based ferroelectric and antiferroelectric single crystals: composition modification, crystal growth and properties,” Cyrst. Eng. Comm. 14(14), 4547–4556 (2012).
[Crossref]

H. S. Lee, S. W. Min, M. K. Park, Y. T. Lee, P. J. Jeon, J. H. Kim, S. Ryu, and S. Im, “MoS2 nanosheets for top-gate nonvolatile memory transistor channel,” Small 8(20), 3111–3115 (2012).
[Crossref] [PubMed]

D. J. Late, B. Liu, J. Luo, A. Yan, H. S. Matte, M. Grayson, C. N. Rao, and V. P. Dravid, “GaS and GaSe ultrathin layer transistors,” Adv. Mater. 24(26), 3549–3554 (2012).
[Crossref] [PubMed]

2010 (2)

K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS₂: a new direct-gap semiconductor,” Phys. Rev. Lett. 105(13), 136805 (2010).
[Crossref] [PubMed]

C. Lee, H. Yan, L. E. Brus, T. F. Heinz, J. Hone, and S. Ryu, “Anomalous lattice vibrations of single- and few-layer MoS2.,” ACS Nano 4(5), 2695–2700 (2010).
[Crossref] [PubMed]

2009 (1)

L. Liu, X. Li, X. Wu, Y. Wang, W. Di, D. Lin, X. Zhao, H. S. Luo, and N. Neumann, “Dielectric, ferroelectric, and pyroelectric characterization of Mn-doped 0.74Pb(Mg1/3Nb2/3)O3-0.26PbTiO3 crystals for infrared detection applications,” Appl. Phys. Lett. 95(19), 192903 (2009).
[Crossref]

2005 (1)

Y. X. Tang, X. Y. Zhao, X. Q. Feng, W. Q. Jin, and H. S. Luo, “Pyroelectric properties of [111]-oriented Pb(Mg1/3Nb2/3)O3-PbTiO3 crystals,” Appl. Phys. Lett. 86(8), 082901 (2005).
[Crossref]

1988 (1)

A. Assadi, C. Svensson, M. Willander, and O. Inganas, “Field-effect mobility of poly(3-hexylthiophene),” Appl. Phys. Lett. 53(3), 195 (1988).
[Crossref]

Ajayan, P. M.

S. Najmaei, X. Zou, D. Er, J. Li, Z. Jin, W. Gao, Q. Zhang, S. Park, L. Ge, S. Lei, J. Kono, V. B. Shenoy, B. I. Yakobson, A. George, P. M. Ajayan, and J. Lou, “Tailoring the physical properties of molybdenum disulfide monolayers by control of interfacial chemistry,” Nano Lett. 14(3), 1354–1361 (2014).
[Crossref] [PubMed]

Ang, K. W.

Assadi, A.

A. Assadi, C. Svensson, M. Willander, and O. Inganas, “Field-effect mobility of poly(3-hexylthiophene),” Appl. Phys. Lett. 53(3), 195 (1988).
[Crossref]

Ataca, C.

S. Tongay, J. Zhou, C. Ataca, J. Liu, J. S. Kang, T. S. Matthews, L. You, J. Li, J. C. Grossman, and J. Wu, “Broad-range modulation of light emission in two-dimensional semiconductors by molecular physisorption gating,” Nano Lett. 13(6), 2831–2836 (2013).
[Crossref] [PubMed]

Au, K.

N. Y. Chan, M. Zhao, N. Wang, K. Au, J. Wang, L. W. H. Chan, and J. Dai, “Palladium nanoparticle enhanced giant photoresponse at LaAlO3/SrTiO3 two-dimensional electron gas heterostructures,” ACS Nano 7(10), 8673–8679 (2013).
[Crossref] [PubMed]

Bae, G. Y.

J. Yoon, W. Park, G. Y. Bae, Y. Kim, H. S. Jang, Y. Hyun, S. K. Lim, Y. H. Kahng, W. K. Hong, B. H. Lee, and H. C. Ko, “Highly flexible and transparent multilayer MoS2 transistors with graphene electrodes,” Small 9(19), 3295–3300 (2013).
[Crossref] [PubMed]

Baillargeat, D.

H. Li, Q. Zhang, C. C. R. Yap, B. K. Tay, T. H. T. Edwin, A. Olivier, and D. Baillargeat, “From bulk to monolayer MoS2: evolution of Raman scattering,” Adv. Funct. Mater. 22(7), 1385–1390 (2012).
[Crossref]

Bolotin, K. I.

W. Wang, A. Klots, D. Prasai, Y. Yang, K. I. Bolotin, and J. Valentine, “Hot electron-based near-infrared photodetection using bilayer MoS2,” Nano Lett. 15(11), 7440–7444 (2015).
[Crossref] [PubMed]

Bowen, C. R.

C. R. Bowen, H. A. Kim, P. M. Weaver, and S. Dunn, “Piezoelectric and ferroelectric materials and structures for energy harvesting applications,” Energy Environ. Sci. 7(1), 25–44 (2014).
[Crossref]

Brus, L. E.

C. Lee, H. Yan, L. E. Brus, T. F. Heinz, J. Hone, and S. Ryu, “Anomalous lattice vibrations of single- and few-layer MoS2.,” ACS Nano 4(5), 2695–2700 (2010).
[Crossref] [PubMed]

Chai, J. W.

Chai, Y.

C. Zhou, X. Wang, S. Raju, Z. Lin, D. Villaroman, B. Huang, H. L. W. Chan, M. Chan, and Y. Chai, “Low voltage and high ON/OFF ratio field-effect transistors based on CVD MoS2 and ultra high-k gate dielectric PZT,” Nanoscale 7(19), 8695–8700 (2015).
[Crossref] [PubMed]

Chan, H. L. W.

C. Zhou, X. Wang, S. Raju, Z. Lin, D. Villaroman, B. Huang, H. L. W. Chan, M. Chan, and Y. Chai, “Low voltage and high ON/OFF ratio field-effect transistors based on CVD MoS2 and ultra high-k gate dielectric PZT,” Nanoscale 7(19), 8695–8700 (2015).
[Crossref] [PubMed]

Chan, L. W. H.

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S. Tongay, J. Zhou, C. Ataca, J. Liu, J. S. Kang, T. S. Matthews, L. You, J. Li, J. C. Grossman, and J. Wu, “Broad-range modulation of light emission in two-dimensional semiconductors by molecular physisorption gating,” Nano Lett. 13(6), 2831–2836 (2013).
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H. S. Lee, S. W. Min, M. K. Park, Y. T. Lee, P. J. Jeon, J. H. Kim, S. Ryu, and S. Im, “MoS2 nanosheets for top-gate nonvolatile memory transistor channel,” Small 8(20), 3111–3115 (2012).
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Y. J. Ko, Y. K. Park, B. K. Yun, M. Lee, and J. H. Jung, “High pyroelectric power generation of 0.7 Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 single crystal,” Curr. Appl. Phys. 14(11), 1486–1491 (2014).
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J. Yoon, W. Park, G. Y. Bae, Y. Kim, H. S. Jang, Y. Hyun, S. K. Lim, Y. H. Kahng, W. K. Hong, B. H. Lee, and H. C. Ko, “Highly flexible and transparent multilayer MoS2 transistors with graphene electrodes,” Small 9(19), 3295–3300 (2013).
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Lee, C.

C. Lee, H. Yan, L. E. Brus, T. F. Heinz, J. Hone, and S. Ryu, “Anomalous lattice vibrations of single- and few-layer MoS2.,” ACS Nano 4(5), 2695–2700 (2010).
[Crossref] [PubMed]

K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS₂: a new direct-gap semiconductor,” Phys. Rev. Lett. 105(13), 136805 (2010).
[Crossref] [PubMed]

Lee, H. S.

H. S. Lee, S. W. Min, M. K. Park, Y. T. Lee, P. J. Jeon, J. H. Kim, S. Ryu, and S. Im, “MoS2 nanosheets for top-gate nonvolatile memory transistor channel,” Small 8(20), 3111–3115 (2012).
[Crossref] [PubMed]

Lee, M.

Y. J. Ko, Y. K. Park, B. K. Yun, M. Lee, and J. H. Jung, “High pyroelectric power generation of 0.7 Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 single crystal,” Curr. Appl. Phys. 14(11), 1486–1491 (2014).
[Crossref]

Lee, N. E.

T. Q. Trung, S. Ramasundaram, and N. E. Lee, “Infrared detection using transparent and flexible field-effect transistor array with solution processable nanocomposite channel of reduced graphene oxide and P(VDF-TrFE),” Adv. Funct. Mater. 25(11), 1745–1754 (2015).
[Crossref]

Lee, S.

W. Park, J. H. Yang, C. G. Kang, Y. G. Lee, H. J. Hwang, C. Cho, S. K. Lim, S. C. Kang, W. K. Hong, S. K. Lee, S. Lee, and B. H. Lee, “Characteristics of a pressure sensitive touch sensor using a piezoelectric PVDF-TrFE/MoS2 stack,” Nanotechnology 24(47), 475501 (2013).
[Crossref] [PubMed]

Lee, S. K.

W. Park, J. H. Yang, C. G. Kang, Y. G. Lee, H. J. Hwang, C. Cho, S. K. Lim, S. C. Kang, W. K. Hong, S. K. Lee, S. Lee, and B. H. Lee, “Characteristics of a pressure sensitive touch sensor using a piezoelectric PVDF-TrFE/MoS2 stack,” Nanotechnology 24(47), 475501 (2013).
[Crossref] [PubMed]

Lee, Y. G.

W. Park, J. H. Yang, C. G. Kang, Y. G. Lee, H. J. Hwang, C. Cho, S. K. Lim, S. C. Kang, W. K. Hong, S. K. Lee, S. Lee, and B. H. Lee, “Characteristics of a pressure sensitive touch sensor using a piezoelectric PVDF-TrFE/MoS2 stack,” Nanotechnology 24(47), 475501 (2013).
[Crossref] [PubMed]

Lee, Y. T.

H. S. Lee, S. W. Min, M. K. Park, Y. T. Lee, P. J. Jeon, J. H. Kim, S. Ryu, and S. Im, “MoS2 nanosheets for top-gate nonvolatile memory transistor channel,” Small 8(20), 3111–3115 (2012).
[Crossref] [PubMed]

Lei, D.

Lei, S.

S. Najmaei, X. Zou, D. Er, J. Li, Z. Jin, W. Gao, Q. Zhang, S. Park, L. Ge, S. Lei, J. Kono, V. B. Shenoy, B. I. Yakobson, A. George, P. M. Ajayan, and J. Lou, “Tailoring the physical properties of molybdenum disulfide monolayers by control of interfacial chemistry,” Nano Lett. 14(3), 1354–1361 (2014).
[Crossref] [PubMed]

Lei, W. N.

X. H. Zhang, X. H. Huang, M. Q. Xue, X. Ye, W. N. Lei, H. Tang, and C. S. Li, “Hydrothermal synthesis and characterization of 3D flower-like MoS2 microspheres,” Mater. Lett. 148, 67–70 (2015).
[Crossref]

Lembke, D.

O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, and A. Kis, “Ultrasensitive photodetectors based on monolayer MoS2.,” Nat. Nanotechnol. 8(7), 497–501 (2013).
[Crossref] [PubMed]

Leong, W. S.

Li, C. S.

X. H. Zhang, X. H. Huang, M. Q. Xue, X. Ye, W. N. Lei, H. Tang, and C. S. Li, “Hydrothermal synthesis and characterization of 3D flower-like MoS2 microspheres,” Mater. Lett. 148, 67–70 (2015).
[Crossref]

Li, H.

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6(1), 74–80 (2012).
[Crossref] [PubMed]

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6(1), 74–80 (2012).
[Crossref] [PubMed]

H. Li, Q. Zhang, C. C. R. Yap, B. K. Tay, T. H. T. Edwin, A. Olivier, and D. Baillargeat, “From bulk to monolayer MoS2: evolution of Raman scattering,” Adv. Funct. Mater. 22(7), 1385–1390 (2012).
[Crossref]

Li, J.

S. Najmaei, X. Zou, D. Er, J. Li, Z. Jin, W. Gao, Q. Zhang, S. Park, L. Ge, S. Lei, J. Kono, V. B. Shenoy, B. I. Yakobson, A. George, P. M. Ajayan, and J. Lou, “Tailoring the physical properties of molybdenum disulfide monolayers by control of interfacial chemistry,” Nano Lett. 14(3), 1354–1361 (2014).
[Crossref] [PubMed]

S. Tongay, J. Zhou, C. Ataca, J. Liu, J. S. Kang, T. S. Matthews, L. You, J. Li, J. C. Grossman, and J. Wu, “Broad-range modulation of light emission in two-dimensional semiconductors by molecular physisorption gating,” Nano Lett. 13(6), 2831–2836 (2013).
[Crossref] [PubMed]

Li, L.

L. Li, X. Zhao, X. Li, B. Ren, Q. Xu, Z. Liang, W. Di, L. Yang, H. Luo, X. Shao, J. Fang, N. Neumann, and J. Jiao, “Scale effects of low-dimensional relaxor ferroelectric single crystals and their application in novel pyroelectric infrared detectors,” Adv. Mater. 26(16), 2580–2585 (2014).
[Crossref] [PubMed]

Li, L. J.

M. L. Tsai, S. H. Su, J. K. Chang, D. S. Tsai, C. H. Chen, C. I. Wu, L. J. Li, L. J. Chen, and J. H. He, “Monolayer MoS2 heterojunction solar cells,” ACS Nano 8(8), 8317–8322 (2014).
[Crossref] [PubMed]

W. Zhang, C. P. Chuu, J. K. Huang, C. H. Chen, M. L. Tsai, Y. H. Chang, C. T. Liang, Y. Z. Chen, Y. L. Chueh, J. H. He, M. Y. Chou, and L. J. Li, “Ultrahigh-gain photodetectors based on atomically thin graphene-MoS2 heterostructures,” Sci. Rep. 4, 3826 (2014).
[PubMed]

D. S. Tsai, K. K. Liu, D. H. Lien, M. L. Tsai, C. F. Kang, C. A. Lin, L. J. Li, and J. H. He, “Few-Layer MoS2 with high broadband Photogain and fast optical switching for use in harsh environments,” ACS Nano 7(5), 3905–3911 (2013).
[Crossref] [PubMed]

Li, Q.

N. N. Luo, Y. Y. Li, Z. G. Xia, and Q. Li, “Progress in lead-based ferroelectric and antiferroelectric single crystals: composition modification, crystal growth and properties,” Cyrst. Eng. Comm. 14(14), 4547–4556 (2012).
[Crossref]

Li, X.

K. Wu, X. Zhang, J. Wang, X. Li, and J. Chen, “WS₂ as a saturable absorber for ultrafast photonic applications of mode-locked and Q-switched lasers,” Opt. Express 23(9), 11453–11461 (2015).
[Crossref] [PubMed]

L. Li, X. Zhao, X. Li, B. Ren, Q. Xu, Z. Liang, W. Di, L. Yang, H. Luo, X. Shao, J. Fang, N. Neumann, and J. Jiao, “Scale effects of low-dimensional relaxor ferroelectric single crystals and their application in novel pyroelectric infrared detectors,” Adv. Mater. 26(16), 2580–2585 (2014).
[Crossref] [PubMed]

L. Liu, X. Li, X. Wu, Y. Wang, W. Di, D. Lin, X. Zhao, H. S. Luo, and N. Neumann, “Dielectric, ferroelectric, and pyroelectric characterization of Mn-doped 0.74Pb(Mg1/3Nb2/3)O3-0.26PbTiO3 crystals for infrared detection applications,” Appl. Phys. Lett. 95(19), 192903 (2009).
[Crossref]

Li, Y.

Y. Li, C. Y. Xu, P. Hu, and L. Zhen, “Carrier control of MoS2 nanoflakes by functional self-assembled monolayers,” ACS Nano 7(9), 7795–7804 (2013).
[Crossref] [PubMed]

Li, Y. Y.

N. N. Luo, Y. Y. Li, Z. G. Xia, and Q. Li, “Progress in lead-based ferroelectric and antiferroelectric single crystals: composition modification, crystal growth and properties,” Cyrst. Eng. Comm. 14(14), 4547–4556 (2012).
[Crossref]

Liang, C. T.

W. Zhang, C. P. Chuu, J. K. Huang, C. H. Chen, M. L. Tsai, Y. H. Chang, C. T. Liang, Y. Z. Chen, Y. L. Chueh, J. H. He, M. Y. Chou, and L. J. Li, “Ultrahigh-gain photodetectors based on atomically thin graphene-MoS2 heterostructures,” Sci. Rep. 4, 3826 (2014).
[PubMed]

Liang, Z.

L. Li, X. Zhao, X. Li, B. Ren, Q. Xu, Z. Liang, W. Di, L. Yang, H. Luo, X. Shao, J. Fang, N. Neumann, and J. Jiao, “Scale effects of low-dimensional relaxor ferroelectric single crystals and their application in novel pyroelectric infrared detectors,” Adv. Mater. 26(16), 2580–2585 (2014).
[Crossref] [PubMed]

Lien, D. H.

D. S. Tsai, K. K. Liu, D. H. Lien, M. L. Tsai, C. F. Kang, C. A. Lin, L. J. Li, and J. H. He, “Few-Layer MoS2 with high broadband Photogain and fast optical switching for use in harsh environments,” ACS Nano 7(5), 3905–3911 (2013).
[Crossref] [PubMed]

Lim, S. K.

W. Park, J. H. Yang, C. G. Kang, Y. G. Lee, H. J. Hwang, C. Cho, S. K. Lim, S. C. Kang, W. K. Hong, S. K. Lee, S. Lee, and B. H. Lee, “Characteristics of a pressure sensitive touch sensor using a piezoelectric PVDF-TrFE/MoS2 stack,” Nanotechnology 24(47), 475501 (2013).
[Crossref] [PubMed]

J. Yoon, W. Park, G. Y. Bae, Y. Kim, H. S. Jang, Y. Hyun, S. K. Lim, Y. H. Kahng, W. K. Hong, B. H. Lee, and H. C. Ko, “Highly flexible and transparent multilayer MoS2 transistors with graphene electrodes,” Small 9(19), 3295–3300 (2013).
[Crossref] [PubMed]

Lin, C. A.

D. S. Tsai, K. K. Liu, D. H. Lien, M. L. Tsai, C. F. Kang, C. A. Lin, L. J. Li, and J. H. He, “Few-Layer MoS2 with high broadband Photogain and fast optical switching for use in harsh environments,” ACS Nano 7(5), 3905–3911 (2013).
[Crossref] [PubMed]

Lin, D.

L. Liu, X. Li, X. Wu, Y. Wang, W. Di, D. Lin, X. Zhao, H. S. Luo, and N. Neumann, “Dielectric, ferroelectric, and pyroelectric characterization of Mn-doped 0.74Pb(Mg1/3Nb2/3)O3-0.26PbTiO3 crystals for infrared detection applications,” Appl. Phys. Lett. 95(19), 192903 (2009).
[Crossref]

Lin, Z.

C. Zhou, X. Wang, S. Raju, Z. Lin, D. Villaroman, B. Huang, H. L. W. Chan, M. Chan, and Y. Chai, “Low voltage and high ON/OFF ratio field-effect transistors based on CVD MoS2 and ultra high-k gate dielectric PZT,” Nanoscale 7(19), 8695–8700 (2015).
[Crossref] [PubMed]

Ling, Z. P.

Liu, B.

D. J. Late, B. Liu, J. Luo, A. Yan, H. S. Matte, M. Grayson, C. N. Rao, and V. P. Dravid, “GaS and GaSe ultrathin layer transistors,” Adv. Mater. 24(26), 3549–3554 (2012).
[Crossref] [PubMed]

Liu, J.

S. Tongay, J. Zhou, C. Ataca, J. Liu, J. S. Kang, T. S. Matthews, L. You, J. Li, J. C. Grossman, and J. Wu, “Broad-range modulation of light emission in two-dimensional semiconductors by molecular physisorption gating,” Nano Lett. 13(6), 2831–2836 (2013).
[Crossref] [PubMed]

Liu, K.

Liu, K. K.

D. S. Tsai, K. K. Liu, D. H. Lien, M. L. Tsai, C. F. Kang, C. A. Lin, L. J. Li, and J. H. He, “Few-Layer MoS2 with high broadband Photogain and fast optical switching for use in harsh environments,” ACS Nano 7(5), 3905–3911 (2013).
[Crossref] [PubMed]

Liu, L.

L. Liu, X. Li, X. Wu, Y. Wang, W. Di, D. Lin, X. Zhao, H. S. Luo, and N. Neumann, “Dielectric, ferroelectric, and pyroelectric characterization of Mn-doped 0.74Pb(Mg1/3Nb2/3)O3-0.26PbTiO3 crystals for infrared detection applications,” Appl. Phys. Lett. 95(19), 192903 (2009).
[Crossref]

Lopez-Sanchez, O.

O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, and A. Kis, “Ultrasensitive photodetectors based on monolayer MoS2.,” Nat. Nanotechnol. 8(7), 497–501 (2013).
[Crossref] [PubMed]

Lou, J.

S. Najmaei, X. Zou, D. Er, J. Li, Z. Jin, W. Gao, Q. Zhang, S. Park, L. Ge, S. Lei, J. Kono, V. B. Shenoy, B. I. Yakobson, A. George, P. M. Ajayan, and J. Lou, “Tailoring the physical properties of molybdenum disulfide monolayers by control of interfacial chemistry,” Nano Lett. 14(3), 1354–1361 (2014).
[Crossref] [PubMed]

Lu, G.

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6(1), 74–80 (2012).
[Crossref] [PubMed]

Luo, H.

L. Li, X. Zhao, X. Li, B. Ren, Q. Xu, Z. Liang, W. Di, L. Yang, H. Luo, X. Shao, J. Fang, N. Neumann, and J. Jiao, “Scale effects of low-dimensional relaxor ferroelectric single crystals and their application in novel pyroelectric infrared detectors,” Adv. Mater. 26(16), 2580–2585 (2014).
[Crossref] [PubMed]

Luo, H. S.

L. Liu, X. Li, X. Wu, Y. Wang, W. Di, D. Lin, X. Zhao, H. S. Luo, and N. Neumann, “Dielectric, ferroelectric, and pyroelectric characterization of Mn-doped 0.74Pb(Mg1/3Nb2/3)O3-0.26PbTiO3 crystals for infrared detection applications,” Appl. Phys. Lett. 95(19), 192903 (2009).
[Crossref]

Y. X. Tang, X. Y. Zhao, X. Q. Feng, W. Q. Jin, and H. S. Luo, “Pyroelectric properties of [111]-oriented Pb(Mg1/3Nb2/3)O3-PbTiO3 crystals,” Appl. Phys. Lett. 86(8), 082901 (2005).
[Crossref]

Luo, J.

D. J. Late, B. Liu, J. Luo, A. Yan, H. S. Matte, M. Grayson, C. N. Rao, and V. P. Dravid, “GaS and GaSe ultrathin layer transistors,” Adv. Mater. 24(26), 3549–3554 (2012).
[Crossref] [PubMed]

Luo, N. N.

N. N. Luo, Y. Y. Li, Z. G. Xia, and Q. Li, “Progress in lead-based ferroelectric and antiferroelectric single crystals: composition modification, crystal growth and properties,” Cyrst. Eng. Comm. 14(14), 4547–4556 (2012).
[Crossref]

Mak, K. F.

K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS₂: a new direct-gap semiconductor,” Phys. Rev. Lett. 105(13), 136805 (2010).
[Crossref] [PubMed]

Matte, H. S.

D. J. Late, B. Liu, J. Luo, A. Yan, H. S. Matte, M. Grayson, C. N. Rao, and V. P. Dravid, “GaS and GaSe ultrathin layer transistors,” Adv. Mater. 24(26), 3549–3554 (2012).
[Crossref] [PubMed]

Matthews, T. S.

S. Tongay, J. Zhou, C. Ataca, J. Liu, J. S. Kang, T. S. Matthews, L. You, J. Li, J. C. Grossman, and J. Wu, “Broad-range modulation of light emission in two-dimensional semiconductors by molecular physisorption gating,” Nano Lett. 13(6), 2831–2836 (2013).
[Crossref] [PubMed]

Miller, B.

B. Miller, E. Parzinger, A. Vernickel, A. W. Holleitner, and U. Wurstbauer, “Photogating of mono- and few-layer MoS2,” Appl. Phys. Lett. 106(12), 122103 (2015).
[Crossref]

Min, S. W.

H. S. Lee, S. W. Min, M. K. Park, Y. T. Lee, P. J. Jeon, J. H. Kim, S. Ryu, and S. Im, “MoS2 nanosheets for top-gate nonvolatile memory transistor channel,” Small 8(20), 3111–3115 (2012).
[Crossref] [PubMed]

Najmaei, S.

S. Najmaei, X. Zou, D. Er, J. Li, Z. Jin, W. Gao, Q. Zhang, S. Park, L. Ge, S. Lei, J. Kono, V. B. Shenoy, B. I. Yakobson, A. George, P. M. Ajayan, and J. Lou, “Tailoring the physical properties of molybdenum disulfide monolayers by control of interfacial chemistry,” Nano Lett. 14(3), 1354–1361 (2014).
[Crossref] [PubMed]

Neumann, N.

L. Li, X. Zhao, X. Li, B. Ren, Q. Xu, Z. Liang, W. Di, L. Yang, H. Luo, X. Shao, J. Fang, N. Neumann, and J. Jiao, “Scale effects of low-dimensional relaxor ferroelectric single crystals and their application in novel pyroelectric infrared detectors,” Adv. Mater. 26(16), 2580–2585 (2014).
[Crossref] [PubMed]

L. Liu, X. Li, X. Wu, Y. Wang, W. Di, D. Lin, X. Zhao, H. S. Luo, and N. Neumann, “Dielectric, ferroelectric, and pyroelectric characterization of Mn-doped 0.74Pb(Mg1/3Nb2/3)O3-0.26PbTiO3 crystals for infrared detection applications,” Appl. Phys. Lett. 95(19), 192903 (2009).
[Crossref]

Olivier, A.

H. Li, Q. Zhang, C. C. R. Yap, B. K. Tay, T. H. T. Edwin, A. Olivier, and D. Baillargeat, “From bulk to monolayer MoS2: evolution of Raman scattering,” Adv. Funct. Mater. 22(7), 1385–1390 (2012).
[Crossref]

Park, M. K.

H. S. Lee, S. W. Min, M. K. Park, Y. T. Lee, P. J. Jeon, J. H. Kim, S. Ryu, and S. Im, “MoS2 nanosheets for top-gate nonvolatile memory transistor channel,” Small 8(20), 3111–3115 (2012).
[Crossref] [PubMed]

Park, S.

S. Najmaei, X. Zou, D. Er, J. Li, Z. Jin, W. Gao, Q. Zhang, S. Park, L. Ge, S. Lei, J. Kono, V. B. Shenoy, B. I. Yakobson, A. George, P. M. Ajayan, and J. Lou, “Tailoring the physical properties of molybdenum disulfide monolayers by control of interfacial chemistry,” Nano Lett. 14(3), 1354–1361 (2014).
[Crossref] [PubMed]

Park, W.

W. Park, J. H. Yang, C. G. Kang, Y. G. Lee, H. J. Hwang, C. Cho, S. K. Lim, S. C. Kang, W. K. Hong, S. K. Lee, S. Lee, and B. H. Lee, “Characteristics of a pressure sensitive touch sensor using a piezoelectric PVDF-TrFE/MoS2 stack,” Nanotechnology 24(47), 475501 (2013).
[Crossref] [PubMed]

J. Yoon, W. Park, G. Y. Bae, Y. Kim, H. S. Jang, Y. Hyun, S. K. Lim, Y. H. Kahng, W. K. Hong, B. H. Lee, and H. C. Ko, “Highly flexible and transparent multilayer MoS2 transistors with graphene electrodes,” Small 9(19), 3295–3300 (2013).
[Crossref] [PubMed]

Park, Y. K.

Y. J. Ko, Y. K. Park, B. K. Yun, M. Lee, and J. H. Jung, “High pyroelectric power generation of 0.7 Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 single crystal,” Curr. Appl. Phys. 14(11), 1486–1491 (2014).
[Crossref]

Parzinger, E.

B. Miller, E. Parzinger, A. Vernickel, A. W. Holleitner, and U. Wurstbauer, “Photogating of mono- and few-layer MoS2,” Appl. Phys. Lett. 106(12), 122103 (2015).
[Crossref]

Popov, S. V.

Prasai, D.

W. Wang, A. Klots, D. Prasai, Y. Yang, K. I. Bolotin, and J. Valentine, “Hot electron-based near-infrared photodetection using bilayer MoS2,” Nano Lett. 15(11), 7440–7444 (2015).
[Crossref] [PubMed]

Radenovic, A.

O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, and A. Kis, “Ultrasensitive photodetectors based on monolayer MoS2.,” Nat. Nanotechnol. 8(7), 497–501 (2013).
[Crossref] [PubMed]

Raju, S.

C. Zhou, X. Wang, S. Raju, Z. Lin, D. Villaroman, B. Huang, H. L. W. Chan, M. Chan, and Y. Chai, “Low voltage and high ON/OFF ratio field-effect transistors based on CVD MoS2 and ultra high-k gate dielectric PZT,” Nanoscale 7(19), 8695–8700 (2015).
[Crossref] [PubMed]

Ramasundaram, S.

T. Q. Trung, S. Ramasundaram, and N. E. Lee, “Infrared detection using transparent and flexible field-effect transistor array with solution processable nanocomposite channel of reduced graphene oxide and P(VDF-TrFE),” Adv. Funct. Mater. 25(11), 1745–1754 (2015).
[Crossref]

Rao, C. N.

D. J. Late, B. Liu, J. Luo, A. Yan, H. S. Matte, M. Grayson, C. N. Rao, and V. P. Dravid, “GaS and GaSe ultrathin layer transistors,” Adv. Mater. 24(26), 3549–3554 (2012).
[Crossref] [PubMed]

Ren, B.

L. Li, X. Zhao, X. Li, B. Ren, Q. Xu, Z. Liang, W. Di, L. Yang, H. Luo, X. Shao, J. Fang, N. Neumann, and J. Jiao, “Scale effects of low-dimensional relaxor ferroelectric single crystals and their application in novel pyroelectric infrared detectors,” Adv. Mater. 26(16), 2580–2585 (2014).
[Crossref] [PubMed]

Roelofs, A.

S. Das, M. Demarteau, and A. Roelofs, “Nb-doped single crystalline MoS2 field effect transistor,” Appl. Phys. Lett. 106(17), 173506 (2015).
[Crossref]

Ryu, S.

H. S. Lee, S. W. Min, M. K. Park, Y. T. Lee, P. J. Jeon, J. H. Kim, S. Ryu, and S. Im, “MoS2 nanosheets for top-gate nonvolatile memory transistor channel,” Small 8(20), 3111–3115 (2012).
[Crossref] [PubMed]

C. Lee, H. Yan, L. E. Brus, T. F. Heinz, J. Hone, and S. Ryu, “Anomalous lattice vibrations of single- and few-layer MoS2.,” ACS Nano 4(5), 2695–2700 (2010).
[Crossref] [PubMed]

Shan, J.

K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS₂: a new direct-gap semiconductor,” Phys. Rev. Lett. 105(13), 136805 (2010).
[Crossref] [PubMed]

Shao, X.

L. Li, X. Zhao, X. Li, B. Ren, Q. Xu, Z. Liang, W. Di, L. Yang, H. Luo, X. Shao, J. Fang, N. Neumann, and J. Jiao, “Scale effects of low-dimensional relaxor ferroelectric single crystals and their application in novel pyroelectric infrared detectors,” Adv. Mater. 26(16), 2580–2585 (2014).
[Crossref] [PubMed]

Shenoy, V. B.

S. Najmaei, X. Zou, D. Er, J. Li, Z. Jin, W. Gao, Q. Zhang, S. Park, L. Ge, S. Lei, J. Kono, V. B. Shenoy, B. I. Yakobson, A. George, P. M. Ajayan, and J. Lou, “Tailoring the physical properties of molybdenum disulfide monolayers by control of interfacial chemistry,” Nano Lett. 14(3), 1354–1361 (2014).
[Crossref] [PubMed]

Shi, Y.

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6(1), 74–80 (2012).
[Crossref] [PubMed]

Shih, W. Y.

C.-Y. Hsieh, Y.-T. Chen, W.-J. Tan, Y.-F. Chen, W. Y. Shih, and W.-H. Shih, “Graphene- lead zirconate titanate optothermal field effect transistors,” Appl. Phys. Lett. 100(11), 113507 (2012).
[Crossref]

Shih, W.-H.

C.-Y. Hsieh, Y.-T. Chen, W.-J. Tan, Y.-F. Chen, W. Y. Shih, and W.-H. Shih, “Graphene- lead zirconate titanate optothermal field effect transistors,” Appl. Phys. Lett. 100(11), 113507 (2012).
[Crossref]

Song, H.

Su, S. H.

M. L. Tsai, S. H. Su, J. K. Chang, D. S. Tsai, C. H. Chen, C. I. Wu, L. J. Li, L. J. Chen, and J. H. He, “Monolayer MoS2 heterojunction solar cells,” ACS Nano 8(8), 8317–8322 (2014).
[Crossref] [PubMed]

Sun, Y.

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6(1), 74–80 (2012).
[Crossref] [PubMed]

Svensson, C.

A. Assadi, C. Svensson, M. Willander, and O. Inganas, “Field-effect mobility of poly(3-hexylthiophene),” Appl. Phys. Lett. 53(3), 195 (1988).
[Crossref]

Tan, W.-J.

C.-Y. Hsieh, Y.-T. Chen, W.-J. Tan, Y.-F. Chen, W. Y. Shih, and W.-H. Shih, “Graphene- lead zirconate titanate optothermal field effect transistors,” Appl. Phys. Lett. 100(11), 113507 (2012).
[Crossref]

Tang, H.

X. H. Zhang, X. H. Huang, M. Q. Xue, X. Ye, W. N. Lei, H. Tang, and C. S. Li, “Hydrothermal synthesis and characterization of 3D flower-like MoS2 microspheres,” Mater. Lett. 148, 67–70 (2015).
[Crossref]

Tang, Y. X.

Y. X. Tang, X. Y. Zhao, X. Q. Feng, W. Q. Jin, and H. S. Luo, “Pyroelectric properties of [111]-oriented Pb(Mg1/3Nb2/3)O3-PbTiO3 crystals,” Appl. Phys. Lett. 86(8), 082901 (2005).
[Crossref]

Tay, B. K.

H. Li, Q. Zhang, C. C. R. Yap, B. K. Tay, T. H. T. Edwin, A. Olivier, and D. Baillargeat, “From bulk to monolayer MoS2: evolution of Raman scattering,” Adv. Funct. Mater. 22(7), 1385–1390 (2012).
[Crossref]

Taylor, J. R.

Tong, Y.

Tongay, S.

S. Tongay, J. Zhou, C. Ataca, J. Liu, J. S. Kang, T. S. Matthews, L. You, J. Li, J. C. Grossman, and J. Wu, “Broad-range modulation of light emission in two-dimensional semiconductors by molecular physisorption gating,” Nano Lett. 13(6), 2831–2836 (2013).
[Crossref] [PubMed]

Torrisi, F.

Trung, T. Q.

T. Q. Trung, S. Ramasundaram, and N. E. Lee, “Infrared detection using transparent and flexible field-effect transistor array with solution processable nanocomposite channel of reduced graphene oxide and P(VDF-TrFE),” Adv. Funct. Mater. 25(11), 1745–1754 (2015).
[Crossref]

Tsai, D. S.

M. L. Tsai, S. H. Su, J. K. Chang, D. S. Tsai, C. H. Chen, C. I. Wu, L. J. Li, L. J. Chen, and J. H. He, “Monolayer MoS2 heterojunction solar cells,” ACS Nano 8(8), 8317–8322 (2014).
[Crossref] [PubMed]

D. S. Tsai, K. K. Liu, D. H. Lien, M. L. Tsai, C. F. Kang, C. A. Lin, L. J. Li, and J. H. He, “Few-Layer MoS2 with high broadband Photogain and fast optical switching for use in harsh environments,” ACS Nano 7(5), 3905–3911 (2013).
[Crossref] [PubMed]

Tsai, M. L.

M. L. Tsai, S. H. Su, J. K. Chang, D. S. Tsai, C. H. Chen, C. I. Wu, L. J. Li, L. J. Chen, and J. H. He, “Monolayer MoS2 heterojunction solar cells,” ACS Nano 8(8), 8317–8322 (2014).
[Crossref] [PubMed]

W. Zhang, C. P. Chuu, J. K. Huang, C. H. Chen, M. L. Tsai, Y. H. Chang, C. T. Liang, Y. Z. Chen, Y. L. Chueh, J. H. He, M. Y. Chou, and L. J. Li, “Ultrahigh-gain photodetectors based on atomically thin graphene-MoS2 heterostructures,” Sci. Rep. 4, 3826 (2014).
[PubMed]

D. S. Tsai, K. K. Liu, D. H. Lien, M. L. Tsai, C. F. Kang, C. A. Lin, L. J. Li, and J. H. He, “Few-Layer MoS2 with high broadband Photogain and fast optical switching for use in harsh environments,” ACS Nano 7(5), 3905–3911 (2013).
[Crossref] [PubMed]

Valentine, J.

W. Wang, A. Klots, D. Prasai, Y. Yang, K. I. Bolotin, and J. Valentine, “Hot electron-based near-infrared photodetection using bilayer MoS2,” Nano Lett. 15(11), 7440–7444 (2015).
[Crossref] [PubMed]

Vernickel, A.

B. Miller, E. Parzinger, A. Vernickel, A. W. Holleitner, and U. Wurstbauer, “Photogating of mono- and few-layer MoS2,” Appl. Phys. Lett. 106(12), 122103 (2015).
[Crossref]

Villaroman, D.

C. Zhou, X. Wang, S. Raju, Z. Lin, D. Villaroman, B. Huang, H. L. W. Chan, M. Chan, and Y. Chai, “Low voltage and high ON/OFF ratio field-effect transistors based on CVD MoS2 and ultra high-k gate dielectric PZT,” Nanoscale 7(19), 8695–8700 (2015).
[Crossref] [PubMed]

Wang, C.

Wang, J.

K. Wu, X. Zhang, J. Wang, X. Li, and J. Chen, “WS₂ as a saturable absorber for ultrafast photonic applications of mode-locked and Q-switched lasers,” Opt. Express 23(9), 11453–11461 (2015).
[Crossref] [PubMed]

N. Y. Chan, M. Zhao, N. Wang, K. Au, J. Wang, L. W. H. Chan, and J. Dai, “Palladium nanoparticle enhanced giant photoresponse at LaAlO3/SrTiO3 two-dimensional electron gas heterostructures,” ACS Nano 7(10), 8673–8679 (2013).
[Crossref] [PubMed]

Wang, N.

N. Y. Chan, M. Zhao, N. Wang, K. Au, J. Wang, L. W. H. Chan, and J. Dai, “Palladium nanoparticle enhanced giant photoresponse at LaAlO3/SrTiO3 two-dimensional electron gas heterostructures,” ACS Nano 7(10), 8673–8679 (2013).
[Crossref] [PubMed]

Wang, S. J.

Wang, W.

W. Wang, A. Klots, D. Prasai, Y. Yang, K. I. Bolotin, and J. Valentine, “Hot electron-based near-infrared photodetection using bilayer MoS2,” Nano Lett. 15(11), 7440–7444 (2015).
[Crossref] [PubMed]

Wang, X.

C. Zhou, X. Wang, S. Raju, Z. Lin, D. Villaroman, B. Huang, H. L. W. Chan, M. Chan, and Y. Chai, “Low voltage and high ON/OFF ratio field-effect transistors based on CVD MoS2 and ultra high-k gate dielectric PZT,” Nanoscale 7(19), 8695–8700 (2015).
[Crossref] [PubMed]

X. Wang, H. Feng, Y. Wu, and L. Jiao, “Controlled synthesis of highly crystalline MoS2 flakes by chemical vapor deposition,” J. Am. Chem. Soc. 135(14), 5304–5307 (2013).
[Crossref] [PubMed]

Wang, Y.

L. Liu, X. Li, X. Wu, Y. Wang, W. Di, D. Lin, X. Zhao, H. S. Luo, and N. Neumann, “Dielectric, ferroelectric, and pyroelectric characterization of Mn-doped 0.74Pb(Mg1/3Nb2/3)O3-0.26PbTiO3 crystals for infrared detection applications,” Appl. Phys. Lett. 95(19), 192903 (2009).
[Crossref]

Weaver, P. M.

C. R. Bowen, H. A. Kim, P. M. Weaver, and S. Dunn, “Piezoelectric and ferroelectric materials and structures for energy harvesting applications,” Energy Environ. Sci. 7(1), 25–44 (2014).
[Crossref]

Willander, M.

A. Assadi, C. Svensson, M. Willander, and O. Inganas, “Field-effect mobility of poly(3-hexylthiophene),” Appl. Phys. Lett. 53(3), 195 (1988).
[Crossref]

Woodward, R. I.

Wu, C. I.

M. L. Tsai, S. H. Su, J. K. Chang, D. S. Tsai, C. H. Chen, C. I. Wu, L. J. Li, L. J. Chen, and J. H. He, “Monolayer MoS2 heterojunction solar cells,” ACS Nano 8(8), 8317–8322 (2014).
[Crossref] [PubMed]

Wu, J.

S. Tongay, J. Zhou, C. Ataca, J. Liu, J. S. Kang, T. S. Matthews, L. You, J. Li, J. C. Grossman, and J. Wu, “Broad-range modulation of light emission in two-dimensional semiconductors by molecular physisorption gating,” Nano Lett. 13(6), 2831–2836 (2013).
[Crossref] [PubMed]

Wu, K.

Wu, X.

L. Liu, X. Li, X. Wu, Y. Wang, W. Di, D. Lin, X. Zhao, H. S. Luo, and N. Neumann, “Dielectric, ferroelectric, and pyroelectric characterization of Mn-doped 0.74Pb(Mg1/3Nb2/3)O3-0.26PbTiO3 crystals for infrared detection applications,” Appl. Phys. Lett. 95(19), 192903 (2009).
[Crossref]

Wu, Y.

X. Wang, H. Feng, Y. Wu, and L. Jiao, “Controlled synthesis of highly crystalline MoS2 flakes by chemical vapor deposition,” J. Am. Chem. Soc. 135(14), 5304–5307 (2013).
[Crossref] [PubMed]

Wurstbauer, U.

B. Miller, E. Parzinger, A. Vernickel, A. W. Holleitner, and U. Wurstbauer, “Photogating of mono- and few-layer MoS2,” Appl. Phys. Lett. 106(12), 122103 (2015).
[Crossref]

Xia, Z. G.

N. N. Luo, Y. Y. Li, Z. G. Xia, and Q. Li, “Progress in lead-based ferroelectric and antiferroelectric single crystals: composition modification, crystal growth and properties,” Cyrst. Eng. Comm. 14(14), 4547–4556 (2012).
[Crossref]

Xu, C. Y.

Y. Li, C. Y. Xu, P. Hu, and L. Zhen, “Carrier control of MoS2 nanoflakes by functional self-assembled monolayers,” ACS Nano 7(9), 7795–7804 (2013).
[Crossref] [PubMed]

Xu, Q.

L. Li, X. Zhao, X. Li, B. Ren, Q. Xu, Z. Liang, W. Di, L. Yang, H. Luo, X. Shao, J. Fang, N. Neumann, and J. Jiao, “Scale effects of low-dimensional relaxor ferroelectric single crystals and their application in novel pyroelectric infrared detectors,” Adv. Mater. 26(16), 2580–2585 (2014).
[Crossref] [PubMed]

Xu, Y.

Xue, M. Q.

X. H. Zhang, X. H. Huang, M. Q. Xue, X. Ye, W. N. Lei, H. Tang, and C. S. Li, “Hydrothermal synthesis and characterization of 3D flower-like MoS2 microspheres,” Mater. Lett. 148, 67–70 (2015).
[Crossref]

Yakobson, B. I.

S. Najmaei, X. Zou, D. Er, J. Li, Z. Jin, W. Gao, Q. Zhang, S. Park, L. Ge, S. Lei, J. Kono, V. B. Shenoy, B. I. Yakobson, A. George, P. M. Ajayan, and J. Lou, “Tailoring the physical properties of molybdenum disulfide monolayers by control of interfacial chemistry,” Nano Lett. 14(3), 1354–1361 (2014).
[Crossref] [PubMed]

Yan, A.

D. J. Late, B. Liu, J. Luo, A. Yan, H. S. Matte, M. Grayson, C. N. Rao, and V. P. Dravid, “GaS and GaSe ultrathin layer transistors,” Adv. Mater. 24(26), 3549–3554 (2012).
[Crossref] [PubMed]

Yan, H.

C. Lee, H. Yan, L. E. Brus, T. F. Heinz, J. Hone, and S. Ryu, “Anomalous lattice vibrations of single- and few-layer MoS2.,” ACS Nano 4(5), 2695–2700 (2010).
[Crossref] [PubMed]

Yang, J. H.

W. Park, J. H. Yang, C. G. Kang, Y. G. Lee, H. J. Hwang, C. Cho, S. K. Lim, S. C. Kang, W. K. Hong, S. K. Lee, S. Lee, and B. H. Lee, “Characteristics of a pressure sensitive touch sensor using a piezoelectric PVDF-TrFE/MoS2 stack,” Nanotechnology 24(47), 475501 (2013).
[Crossref] [PubMed]

Yang, L.

L. Li, X. Zhao, X. Li, B. Ren, Q. Xu, Z. Liang, W. Di, L. Yang, H. Luo, X. Shao, J. Fang, N. Neumann, and J. Jiao, “Scale effects of low-dimensional relaxor ferroelectric single crystals and their application in novel pyroelectric infrared detectors,” Adv. Mater. 26(16), 2580–2585 (2014).
[Crossref] [PubMed]

Yang, R.

Yang, Y.

W. Wang, A. Klots, D. Prasai, Y. Yang, K. I. Bolotin, and J. Valentine, “Hot electron-based near-infrared photodetection using bilayer MoS2,” Nano Lett. 15(11), 7440–7444 (2015).
[Crossref] [PubMed]

Yap, C. C. R.

H. Li, Q. Zhang, C. C. R. Yap, B. K. Tay, T. H. T. Edwin, A. Olivier, and D. Baillargeat, “From bulk to monolayer MoS2: evolution of Raman scattering,” Adv. Funct. Mater. 22(7), 1385–1390 (2012).
[Crossref]

Ye, X.

X. H. Zhang, X. H. Huang, M. Q. Xue, X. Ye, W. N. Lei, H. Tang, and C. S. Li, “Hydrothermal synthesis and characterization of 3D flower-like MoS2 microspheres,” Mater. Lett. 148, 67–70 (2015).
[Crossref]

Yin, Z.

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6(1), 74–80 (2012).
[Crossref] [PubMed]

Yoon, J.

J. Yoon, W. Park, G. Y. Bae, Y. Kim, H. S. Jang, Y. Hyun, S. K. Lim, Y. H. Kahng, W. K. Hong, B. H. Lee, and H. C. Ko, “Highly flexible and transparent multilayer MoS2 transistors with graphene electrodes,” Small 9(19), 3295–3300 (2013).
[Crossref] [PubMed]

You, L.

S. Tongay, J. Zhou, C. Ataca, J. Liu, J. S. Kang, T. S. Matthews, L. You, J. Li, J. C. Grossman, and J. Wu, “Broad-range modulation of light emission in two-dimensional semiconductors by molecular physisorption gating,” Nano Lett. 13(6), 2831–2836 (2013).
[Crossref] [PubMed]

Yun, B. K.

Y. J. Ko, Y. K. Park, B. K. Yun, M. Lee, and J. H. Jung, “High pyroelectric power generation of 0.7 Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 single crystal,” Curr. Appl. Phys. 14(11), 1486–1491 (2014).
[Crossref]

Zeng, X.

Zhang, H.

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6(1), 74–80 (2012).
[Crossref] [PubMed]

Zhang, N.

Zhang, Q.

S. Najmaei, X. Zou, D. Er, J. Li, Z. Jin, W. Gao, Q. Zhang, S. Park, L. Ge, S. Lei, J. Kono, V. B. Shenoy, B. I. Yakobson, A. George, P. M. Ajayan, and J. Lou, “Tailoring the physical properties of molybdenum disulfide monolayers by control of interfacial chemistry,” Nano Lett. 14(3), 1354–1361 (2014).
[Crossref] [PubMed]

H. Li, Q. Zhang, C. C. R. Yap, B. K. Tay, T. H. T. Edwin, A. Olivier, and D. Baillargeat, “From bulk to monolayer MoS2: evolution of Raman scattering,” Adv. Funct. Mater. 22(7), 1385–1390 (2012).
[Crossref]

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6(1), 74–80 (2012).
[Crossref] [PubMed]

Zhang, W.

W. Zhang, C. P. Chuu, J. K. Huang, C. H. Chen, M. L. Tsai, Y. H. Chang, C. T. Liang, Y. Z. Chen, Y. L. Chueh, J. H. He, M. Y. Chou, and L. J. Li, “Ultrahigh-gain photodetectors based on atomically thin graphene-MoS2 heterostructures,” Sci. Rep. 4, 3826 (2014).
[PubMed]

Zhang, X.

Zhang, X. H.

X. H. Zhang, X. H. Huang, M. Q. Xue, X. Ye, W. N. Lei, H. Tang, and C. S. Li, “Hydrothermal synthesis and characterization of 3D flower-like MoS2 microspheres,” Mater. Lett. 148, 67–70 (2015).
[Crossref]

Zhao, M.

N. Y. Chan, M. Zhao, N. Wang, K. Au, J. Wang, L. W. H. Chan, and J. Dai, “Palladium nanoparticle enhanced giant photoresponse at LaAlO3/SrTiO3 two-dimensional electron gas heterostructures,” ACS Nano 7(10), 8673–8679 (2013).
[Crossref] [PubMed]

Zhao, X.

L. Li, X. Zhao, X. Li, B. Ren, Q. Xu, Z. Liang, W. Di, L. Yang, H. Luo, X. Shao, J. Fang, N. Neumann, and J. Jiao, “Scale effects of low-dimensional relaxor ferroelectric single crystals and their application in novel pyroelectric infrared detectors,” Adv. Mater. 26(16), 2580–2585 (2014).
[Crossref] [PubMed]

L. Liu, X. Li, X. Wu, Y. Wang, W. Di, D. Lin, X. Zhao, H. S. Luo, and N. Neumann, “Dielectric, ferroelectric, and pyroelectric characterization of Mn-doped 0.74Pb(Mg1/3Nb2/3)O3-0.26PbTiO3 crystals for infrared detection applications,” Appl. Phys. Lett. 95(19), 192903 (2009).
[Crossref]

Zhao, X. Y.

Y. X. Tang, X. Y. Zhao, X. Q. Feng, W. Q. Jin, and H. S. Luo, “Pyroelectric properties of [111]-oriented Pb(Mg1/3Nb2/3)O3-PbTiO3 crystals,” Appl. Phys. Lett. 86(8), 082901 (2005).
[Crossref]

Zhen, L.

Y. Li, C. Y. Xu, P. Hu, and L. Zhen, “Carrier control of MoS2 nanoflakes by functional self-assembled monolayers,” ACS Nano 7(9), 7795–7804 (2013).
[Crossref] [PubMed]

Zhou, C.

C. Zhou, X. Wang, S. Raju, Z. Lin, D. Villaroman, B. Huang, H. L. W. Chan, M. Chan, and Y. Chai, “Low voltage and high ON/OFF ratio field-effect transistors based on CVD MoS2 and ultra high-k gate dielectric PZT,” Nanoscale 7(19), 8695–8700 (2015).
[Crossref] [PubMed]

Zhou, J.

S. Tongay, J. Zhou, C. Ataca, J. Liu, J. S. Kang, T. S. Matthews, L. You, J. Li, J. C. Grossman, and J. Wu, “Broad-range modulation of light emission in two-dimensional semiconductors by molecular physisorption gating,” Nano Lett. 13(6), 2831–2836 (2013).
[Crossref] [PubMed]

Zhou, Q.

Zou, X.

S. Najmaei, X. Zou, D. Er, J. Li, Z. Jin, W. Gao, Q. Zhang, S. Park, L. Ge, S. Lei, J. Kono, V. B. Shenoy, B. I. Yakobson, A. George, P. M. Ajayan, and J. Lou, “Tailoring the physical properties of molybdenum disulfide monolayers by control of interfacial chemistry,” Nano Lett. 14(3), 1354–1361 (2014).
[Crossref] [PubMed]

ACS Nano (6)

M. L. Tsai, S. H. Su, J. K. Chang, D. S. Tsai, C. H. Chen, C. I. Wu, L. J. Li, L. J. Chen, and J. H. He, “Monolayer MoS2 heterojunction solar cells,” ACS Nano 8(8), 8317–8322 (2014).
[Crossref] [PubMed]

D. S. Tsai, K. K. Liu, D. H. Lien, M. L. Tsai, C. F. Kang, C. A. Lin, L. J. Li, and J. H. He, “Few-Layer MoS2 with high broadband Photogain and fast optical switching for use in harsh environments,” ACS Nano 7(5), 3905–3911 (2013).
[Crossref] [PubMed]

Y. Li, C. Y. Xu, P. Hu, and L. Zhen, “Carrier control of MoS2 nanoflakes by functional self-assembled monolayers,” ACS Nano 7(9), 7795–7804 (2013).
[Crossref] [PubMed]

N. Y. Chan, M. Zhao, N. Wang, K. Au, J. Wang, L. W. H. Chan, and J. Dai, “Palladium nanoparticle enhanced giant photoresponse at LaAlO3/SrTiO3 two-dimensional electron gas heterostructures,” ACS Nano 7(10), 8673–8679 (2013).
[Crossref] [PubMed]

C. Lee, H. Yan, L. E. Brus, T. F. Heinz, J. Hone, and S. Ryu, “Anomalous lattice vibrations of single- and few-layer MoS2.,” ACS Nano 4(5), 2695–2700 (2010).
[Crossref] [PubMed]

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6(1), 74–80 (2012).
[Crossref] [PubMed]

Adv. Funct. Mater. (2)

T. Q. Trung, S. Ramasundaram, and N. E. Lee, “Infrared detection using transparent and flexible field-effect transistor array with solution processable nanocomposite channel of reduced graphene oxide and P(VDF-TrFE),” Adv. Funct. Mater. 25(11), 1745–1754 (2015).
[Crossref]

H. Li, Q. Zhang, C. C. R. Yap, B. K. Tay, T. H. T. Edwin, A. Olivier, and D. Baillargeat, “From bulk to monolayer MoS2: evolution of Raman scattering,” Adv. Funct. Mater. 22(7), 1385–1390 (2012).
[Crossref]

Adv. Mater. (2)

L. Li, X. Zhao, X. Li, B. Ren, Q. Xu, Z. Liang, W. Di, L. Yang, H. Luo, X. Shao, J. Fang, N. Neumann, and J. Jiao, “Scale effects of low-dimensional relaxor ferroelectric single crystals and their application in novel pyroelectric infrared detectors,” Adv. Mater. 26(16), 2580–2585 (2014).
[Crossref] [PubMed]

D. J. Late, B. Liu, J. Luo, A. Yan, H. S. Matte, M. Grayson, C. N. Rao, and V. P. Dravid, “GaS and GaSe ultrathin layer transistors,” Adv. Mater. 24(26), 3549–3554 (2012).
[Crossref] [PubMed]

Appl. Phys. Lett. (6)

S. Das, M. Demarteau, and A. Roelofs, “Nb-doped single crystalline MoS2 field effect transistor,” Appl. Phys. Lett. 106(17), 173506 (2015).
[Crossref]

B. Miller, E. Parzinger, A. Vernickel, A. W. Holleitner, and U. Wurstbauer, “Photogating of mono- and few-layer MoS2,” Appl. Phys. Lett. 106(12), 122103 (2015).
[Crossref]

L. Liu, X. Li, X. Wu, Y. Wang, W. Di, D. Lin, X. Zhao, H. S. Luo, and N. Neumann, “Dielectric, ferroelectric, and pyroelectric characterization of Mn-doped 0.74Pb(Mg1/3Nb2/3)O3-0.26PbTiO3 crystals for infrared detection applications,” Appl. Phys. Lett. 95(19), 192903 (2009).
[Crossref]

Y. X. Tang, X. Y. Zhao, X. Q. Feng, W. Q. Jin, and H. S. Luo, “Pyroelectric properties of [111]-oriented Pb(Mg1/3Nb2/3)O3-PbTiO3 crystals,” Appl. Phys. Lett. 86(8), 082901 (2005).
[Crossref]

C.-Y. Hsieh, Y.-T. Chen, W.-J. Tan, Y.-F. Chen, W. Y. Shih, and W.-H. Shih, “Graphene- lead zirconate titanate optothermal field effect transistors,” Appl. Phys. Lett. 100(11), 113507 (2012).
[Crossref]

A. Assadi, C. Svensson, M. Willander, and O. Inganas, “Field-effect mobility of poly(3-hexylthiophene),” Appl. Phys. Lett. 53(3), 195 (1988).
[Crossref]

Curr. Appl. Phys. (1)

Y. J. Ko, Y. K. Park, B. K. Yun, M. Lee, and J. H. Jung, “High pyroelectric power generation of 0.7 Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 single crystal,” Curr. Appl. Phys. 14(11), 1486–1491 (2014).
[Crossref]

Cyrst. Eng. Comm. (1)

N. N. Luo, Y. Y. Li, Z. G. Xia, and Q. Li, “Progress in lead-based ferroelectric and antiferroelectric single crystals: composition modification, crystal growth and properties,” Cyrst. Eng. Comm. 14(14), 4547–4556 (2012).
[Crossref]

Energy Environ. Sci. (1)

C. R. Bowen, H. A. Kim, P. M. Weaver, and S. Dunn, “Piezoelectric and ferroelectric materials and structures for energy harvesting applications,” Energy Environ. Sci. 7(1), 25–44 (2014).
[Crossref]

J. Am. Chem. Soc. (1)

X. Wang, H. Feng, Y. Wu, and L. Jiao, “Controlled synthesis of highly crystalline MoS2 flakes by chemical vapor deposition,” J. Am. Chem. Soc. 135(14), 5304–5307 (2013).
[Crossref] [PubMed]

Mater. Lett. (1)

X. H. Zhang, X. H. Huang, M. Q. Xue, X. Ye, W. N. Lei, H. Tang, and C. S. Li, “Hydrothermal synthesis and characterization of 3D flower-like MoS2 microspheres,” Mater. Lett. 148, 67–70 (2015).
[Crossref]

Nano Lett. (3)

S. Tongay, J. Zhou, C. Ataca, J. Liu, J. S. Kang, T. S. Matthews, L. You, J. Li, J. C. Grossman, and J. Wu, “Broad-range modulation of light emission in two-dimensional semiconductors by molecular physisorption gating,” Nano Lett. 13(6), 2831–2836 (2013).
[Crossref] [PubMed]

S. Najmaei, X. Zou, D. Er, J. Li, Z. Jin, W. Gao, Q. Zhang, S. Park, L. Ge, S. Lei, J. Kono, V. B. Shenoy, B. I. Yakobson, A. George, P. M. Ajayan, and J. Lou, “Tailoring the physical properties of molybdenum disulfide monolayers by control of interfacial chemistry,” Nano Lett. 14(3), 1354–1361 (2014).
[Crossref] [PubMed]

W. Wang, A. Klots, D. Prasai, Y. Yang, K. I. Bolotin, and J. Valentine, “Hot electron-based near-infrared photodetection using bilayer MoS2,” Nano Lett. 15(11), 7440–7444 (2015).
[Crossref] [PubMed]

Nanoscale (1)

C. Zhou, X. Wang, S. Raju, Z. Lin, D. Villaroman, B. Huang, H. L. W. Chan, M. Chan, and Y. Chai, “Low voltage and high ON/OFF ratio field-effect transistors based on CVD MoS2 and ultra high-k gate dielectric PZT,” Nanoscale 7(19), 8695–8700 (2015).
[Crossref] [PubMed]

Nanotechnology (1)

W. Park, J. H. Yang, C. G. Kang, Y. G. Lee, H. J. Hwang, C. Cho, S. K. Lim, S. C. Kang, W. K. Hong, S. K. Lee, S. Lee, and B. H. Lee, “Characteristics of a pressure sensitive touch sensor using a piezoelectric PVDF-TrFE/MoS2 stack,” Nanotechnology 24(47), 475501 (2013).
[Crossref] [PubMed]

Nat. Nanotechnol. (1)

O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, and A. Kis, “Ultrasensitive photodetectors based on monolayer MoS2.,” Nat. Nanotechnol. 8(7), 497–501 (2013).
[Crossref] [PubMed]

Opt. Express (4)

Phys. Rev. Lett. (1)

K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS₂: a new direct-gap semiconductor,” Phys. Rev. Lett. 105(13), 136805 (2010).
[Crossref] [PubMed]

Sci. Rep. (1)

W. Zhang, C. P. Chuu, J. K. Huang, C. H. Chen, M. L. Tsai, Y. H. Chang, C. T. Liang, Y. Z. Chen, Y. L. Chueh, J. H. He, M. Y. Chou, and L. J. Li, “Ultrahigh-gain photodetectors based on atomically thin graphene-MoS2 heterostructures,” Sci. Rep. 4, 3826 (2014).
[PubMed]

Small (2)

J. Yoon, W. Park, G. Y. Bae, Y. Kim, H. S. Jang, Y. Hyun, S. K. Lim, Y. H. Kahng, W. K. Hong, B. H. Lee, and H. C. Ko, “Highly flexible and transparent multilayer MoS2 transistors with graphene electrodes,” Small 9(19), 3295–3300 (2013).
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H. S. Lee, S. W. Min, M. K. Park, Y. T. Lee, P. J. Jeon, J. H. Kim, S. Ryu, and S. Im, “MoS2 nanosheets for top-gate nonvolatile memory transistor channel,” Small 8(20), 3111–3115 (2012).
[Crossref] [PubMed]

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Figures (4)

Fig. 1
Fig. 1 (a) A schematic view of the ferroelectric gate FET, (b)The photograph of monolayer MoS2 film transferred onto the PMN-PT single crystal, (c) Raman spectrum of the monolayer MoS2 film transferred on the transistor channel, (d) PL spectrum of transferred MoS2 on the transistor channel.
Fig. 2
Fig. 2 (a) The XRD pattern of the [111]-oriented PMN-PT single crystal, (b) Temperature dependence of the polarization and the pyroelectric coefficient.
Fig. 3
Fig. 3 (a) Ids-Vds curve of the FET under different laser power densities (without any gate voltage). Inset is the change of Ids as a function of IR laser power density (at an external drain voltage of 0.5 V), (b) and (c) the working mechanism of the ferroelectric field effect transistor modulated with IR illumination, (d) The time-resolved photocurrent in response to IR on/off at an irradiance of 6 mW/mm2 with 1064 nm laser.
Fig. 4
Fig. 4 Wavelength-dependent photoresponse in the visible range, i.e., change of drain current (defined as ION-IOFF) under a bias of 0.5 V.

Equations (3)

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p = d P S d T .
σ = μ N q = μ C o x Z / L ( V g V t h ) .
R = I O N I O F F I O F F × P I R × 100 O O .

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