Sharp bends and Mach-Zehnder interferometer based on Ge-rich-SiGe waveguides on SiGe graded buffer

R. Koerner, M. Oehme, M. Gollhofer, M. Schmid, K. Kostecki, S. Bechler, D. Widmann, E. Kasper, and J. Schulze, “Electrically pumped lasing from Ge Fabry-Perot resonators on Si,” Opt. Express 23(11), 14815–14822 (2015).
[Crossref] [PubMed]

H. T. Chen, P. Verheyen, P. De Heyn, G. Lepage, J. De Coster, P. Absil, G. Roelkens, and J. Van Campenhout, “High-responsivity low-voltage 28-Gb/s p-i-n photodectector with silicon contacts,” J. Lightwave Technol. 33(4), 820–824 (2015).
[Crossref]

C. G. Littlejohns, M. Nedeljkovic, C. F. Mallinson, J. F. Watts, G. Z. Mashanovich, G. T. Reed, and F. Y. Gardes, “Next generation device grade silicon-germanium on insulator,” Sci. Rep. 5, 8288 (2015).
[Crossref] [PubMed]

L. Virot, P. Crozat, J.-M. Fédéli, J.-M. Hartmann, D. Marris-Morini, E. Cassan, F. Boeuf, and L. Vivien, “Germanium avalanche receiver for low power interconnects,” Nat. Commun. 5, 4957 (2014).
[Crossref] [PubMed]

J. Liu, “Monolithically integrated Ge-on-Si active photonics,” Photonics 1(3), 162–197 (2014).
[Crossref]

P. Chaisakul, D. Marris-Morini, J. Frigerio, D. Chrastina, M. S. Rouifed, S. Cecchi, P. Crozat, G. Isella, and L. Vivien, “Integrated germanium optical interconnects on silicon substrates,” Nat. Photonics 8(6), 482–488 (2014).
[Crossref]

M.-S. Rouifed, D. Marris-Morini, P. Chaisakul, J. Frigerio, G. Isella, D. Chrastina, S. Edmond, X. Le Roux, J.-R. Coudevylle, D. Bouville, and L. Vivien, “Advances toward Ge/SiGe quantum-well waveguide modulators at 1.3μm,” IEEE J. Sel. Top. Quantum Electron. 20(4), 33 (2014).
[Crossref]

A. V. Krishnamoorthy, X. Zheng, D. Feng, J. Lexau, J. F. Buckwalter, H. D. Thacker, F. Liu, Y. Luo, E. Chang, P. Amberg, I. Shubin, S. S. Djordjevic, J. H. Lee, S. Lin, H. Liang, A. Abed, R. Shafiiha, K. Raj, R. Ho, M. Asghari, and J. E. Cunningham, “A low-power, high-speed, 9-channel germanium-silicon electro-absorption modulator array integrated with digital CMOS driver and wavelength multiplexer,” Opt. Express 22(10), 12289–12295 (2014).
[Crossref] [PubMed]

K. Hammani, M. A. Ettabib, A. Bogris, A. Kapsalis, D. Syvridis, M. Brun, P. Labeye, S. Nicoletti, D. J. Richardson, and P. Petropoulos, “Optical properties of silicon germanium waveguides at telecommunication wavelengths,” Opt. Express 21(14), 16690–16701 (2013).
[Crossref] [PubMed]

J. Frigerio, P. Chaisakul, D. Marris-Morini, S. Cecchi, M. S. Roufied, G. Isella, and L. Vivien, “Electro-refractive effect in Ge/SiGe multiple quantum wells,” Appl. Phys. Lett. 102(6), 061102 (2013).
[Crossref]

M. Cherchi, S. Ylinen, M. Harjanne, M. Kapulainen, and T. Aalto, “Dramatic size reduction of waveguide bends on a micron-scale silicon photonic platform,” Opt. Express 21(15), 17814–17823 (2013).
[Crossref] [PubMed]

P. Chaisakul, D. Marris-Morini, M. S. Rouifed, G. Isella, D. Chrastina, J. Frigerio, X. Le Roux, S. Edmond, J.-R. Coudevylle, and L. Vivien, “23 GHz Ge/SiGe multiple quantum well electro-absorption modulator,” Opt. Express 20(3), 3219–3224 (2012).
[Crossref] [PubMed]

R. E. Camacho-Aguilera, Y. Cai, N. Patel, J. T. Bessette, M. Romagnoli, L. C. Kimerling, and J. Michel, “An electrically pumped germanium laser,” Opt. Express 20(10), 11316–11320 (2012).
[Crossref] [PubMed]

L. Lever, Y. Hu, M. Myronov, X. Liu, N. Owens, F. Y. Gardes, I. P. Marko, S. J. Sweeney, Z. Ikonić, D. R. Leadley, G. T. Reed, and R. W. Kelsall, “Modulation of the absorption coefficient at 1.3 μm in Ge/SiGe multiple quantum well heterostructures on silicon,” Opt. Lett. 36(21), 4158–4160 (2011).
[Crossref] [PubMed]

J. Liu, M. Beals, A. Pomerene, S. Bernardis, R. Sun, J. Cheng, L. C. Kimerling, and J. Michel, “Waveguide integrated, ultra-low energy GeSi electro-absorption modulators,” Nat. Photonics 2(7), 433–437 (2008).
[Crossref]

Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. Miller, and J. S. Harris, “Strong quantum-confined Stark effect in germanium quantum-well structures on silicon,” Nature 437(7063), 1334–1336 (2005).
[Crossref] [PubMed]

K. Popovic, K. Wada, S. Akiyama, H. A. Haus, and J. Michel, “Air trenches for sharp silica waveguide bends,” J. Lightwave Technol. 20(9), 1762–1772 (2002).
[Crossref]

S. P. Pogossian, L. Vescan, and A. Vonsovici, “High-confinement SiGe low-loss waveguides for Si-based optoelectronics,” Appl. Phys. Lett. 75(10), 1440 (1999).
[Crossref]

L. H. Spiekman, Y. S. Oei, E. G. Metaal, F. H. Groen, P. Demeester, and M. K. Smit, “Ultrasmall waveguide bends: the corner mirrors of the future?” IEE Proc., Optoelectron. 142(1), 61–65 (1995).
[Crossref]

T. Kitoh, N. Takato, M. Yasu, and M. Kawachi, “Bending loss reduction in silica-based waveguides by using lateral offsets,” J. Lightwave Technol. 13(4), 555–562 (1995).
[Crossref]

S. F. Pesarcik, G. V. Treyz, S. S. Iyer, and J. M. Halbout, “Silicon germanium optical waveguides with 0.5 dB/cm losses for singlemode fibre optic systems,” Electron. Lett. 28(2), 159–160 (1992).
[Crossref]

M. Cherchi, S. Ylinen, M. Harjanne, M. Kapulainen, and T. Aalto, “Dramatic size reduction of waveguide bends on a micron-scale silicon photonic platform,” Opt. Express 21(15), 17814–17823 (2013).
[Crossref] [PubMed]

A. V. Krishnamoorthy, X. Zheng, D. Feng, J. Lexau, J. F. Buckwalter, H. D. Thacker, F. Liu, Y. Luo, E. Chang, P. Amberg, I. Shubin, S. S. Djordjevic, J. H. Lee, S. Lin, H. Liang, A. Abed, R. Shafiiha, K. Raj, R. Ho, M. Asghari, and J. E. Cunningham, “A low-power, high-speed, 9-channel germanium-silicon electro-absorption modulator array integrated with digital CMOS driver and wavelength multiplexer,” Opt. Express 22(10), 12289–12295 (2014).
[Crossref] [PubMed]

H. T. Chen, P. Verheyen, P. De Heyn, G. Lepage, J. De Coster, P. Absil, G. Roelkens, and J. Van Campenhout, “High-responsivity low-voltage 28-Gb/s p-i-n photodectector with silicon contacts,” J. Lightwave Technol. 33(4), 820–824 (2015).
[Crossref]

K. Popovic, K. Wada, S. Akiyama, H. A. Haus, and J. Michel, “Air trenches for sharp silica waveguide bends,” J. Lightwave Technol. 20(9), 1762–1772 (2002).
[Crossref]

A. V. Krishnamoorthy, X. Zheng, D. Feng, J. Lexau, J. F. Buckwalter, H. D. Thacker, F. Liu, Y. Luo, E. Chang, P. Amberg, I. Shubin, S. S. Djordjevic, J. H. Lee, S. Lin, H. Liang, A. Abed, R. Shafiiha, K. Raj, R. Ho, M. Asghari, and J. E. Cunningham, “A low-power, high-speed, 9-channel germanium-silicon electro-absorption modulator array integrated with digital CMOS driver and wavelength multiplexer,” Opt. Express 22(10), 12289–12295 (2014).
[Crossref] [PubMed]

A. V. Krishnamoorthy, X. Zheng, D. Feng, J. Lexau, J. F. Buckwalter, H. D. Thacker, F. Liu, Y. Luo, E. Chang, P. Amberg, I. Shubin, S. S. Djordjevic, J. H. Lee, S. Lin, H. Liang, A. Abed, R. Shafiiha, K. Raj, R. Ho, M. Asghari, and J. E. Cunningham, “A low-power, high-speed, 9-channel germanium-silicon electro-absorption modulator array integrated with digital CMOS driver and wavelength multiplexer,” Opt. Express 22(10), 12289–12295 (2014).
[Crossref] [PubMed]

J. Liu, M. Beals, A. Pomerene, S. Bernardis, R. Sun, J. Cheng, L. C. Kimerling, and J. Michel, “Waveguide integrated, ultra-low energy GeSi electro-absorption modulators,” Nat. Photonics 2(7), 433–437 (2008).
[Crossref]

R. Koerner, M. Oehme, M. Gollhofer, M. Schmid, K. Kostecki, S. Bechler, D. Widmann, E. Kasper, and J. Schulze, “Electrically pumped lasing from Ge Fabry-Perot resonators on Si,” Opt. Express 23(11), 14815–14822 (2015).
[Crossref] [PubMed]

J. Liu, M. Beals, A. Pomerene, S. Bernardis, R. Sun, J. Cheng, L. C. Kimerling, and J. Michel, “Waveguide integrated, ultra-low energy GeSi electro-absorption modulators,” Nat. Photonics 2(7), 433–437 (2008).
[Crossref]

R. E. Camacho-Aguilera, Y. Cai, N. Patel, J. T. Bessette, M. Romagnoli, L. C. Kimerling, and J. Michel, “An electrically pumped germanium laser,” Opt. Express 20(10), 11316–11320 (2012).
[Crossref] [PubMed]

L. Virot, P. Crozat, J.-M. Fédéli, J.-M. Hartmann, D. Marris-Morini, E. Cassan, F. Boeuf, and L. Vivien, “Germanium avalanche receiver for low power interconnects,” Nat. Commun. 5, 4957 (2014).
[Crossref] [PubMed]

K. Hammani, M. A. Ettabib, A. Bogris, A. Kapsalis, D. Syvridis, M. Brun, P. Labeye, S. Nicoletti, D. J. Richardson, and P. Petropoulos, “Optical properties of silicon germanium waveguides at telecommunication wavelengths,” Opt. Express 21(14), 16690–16701 (2013).
[Crossref] [PubMed]

M.-S. Rouifed, D. Marris-Morini, P. Chaisakul, J. Frigerio, G. Isella, D. Chrastina, S. Edmond, X. Le Roux, J.-R. Coudevylle, D. Bouville, and L. Vivien, “Advances toward Ge/SiGe quantum-well waveguide modulators at 1.3μm,” IEEE J. Sel. Top. Quantum Electron. 20(4), 33 (2014).
[Crossref]

K. Hammani, M. A. Ettabib, A. Bogris, A. Kapsalis, D. Syvridis, M. Brun, P. Labeye, S. Nicoletti, D. J. Richardson, and P. Petropoulos, “Optical properties of silicon germanium waveguides at telecommunication wavelengths,” Opt. Express 21(14), 16690–16701 (2013).
[Crossref] [PubMed]

A. V. Krishnamoorthy, X. Zheng, D. Feng, J. Lexau, J. F. Buckwalter, H. D. Thacker, F. Liu, Y. Luo, E. Chang, P. Amberg, I. Shubin, S. S. Djordjevic, J. H. Lee, S. Lin, H. Liang, A. Abed, R. Shafiiha, K. Raj, R. Ho, M. Asghari, and J. E. Cunningham, “A low-power, high-speed, 9-channel germanium-silicon electro-absorption modulator array integrated with digital CMOS driver and wavelength multiplexer,” Opt. Express 22(10), 12289–12295 (2014).
[Crossref] [PubMed]

R. E. Camacho-Aguilera, Y. Cai, N. Patel, J. T. Bessette, M. Romagnoli, L. C. Kimerling, and J. Michel, “An electrically pumped germanium laser,” Opt. Express 20(10), 11316–11320 (2012).
[Crossref] [PubMed]

R. E. Camacho-Aguilera, Y. Cai, N. Patel, J. T. Bessette, M. Romagnoli, L. C. Kimerling, and J. Michel, “An electrically pumped germanium laser,” Opt. Express 20(10), 11316–11320 (2012).
[Crossref] [PubMed]

L. Virot, P. Crozat, J.-M. Fédéli, J.-M. Hartmann, D. Marris-Morini, E. Cassan, F. Boeuf, and L. Vivien, “Germanium avalanche receiver for low power interconnects,” Nat. Commun. 5, 4957 (2014).
[Crossref] [PubMed]

P. Chaisakul, D. Marris-Morini, J. Frigerio, D. Chrastina, M. S. Rouifed, S. Cecchi, P. Crozat, G. Isella, and L. Vivien, “Integrated germanium optical interconnects on silicon substrates,” Nat. Photonics 8(6), 482–488 (2014).
[Crossref]

J. Frigerio, P. Chaisakul, D. Marris-Morini, S. Cecchi, M. S. Roufied, G. Isella, and L. Vivien, “Electro-refractive effect in Ge/SiGe multiple quantum wells,” Appl. Phys. Lett. 102(6), 061102 (2013).
[Crossref]

P. Chaisakul, D. Marris-Morini, J. Frigerio, D. Chrastina, M. S. Rouifed, S. Cecchi, P. Crozat, G. Isella, and L. Vivien, “Integrated germanium optical interconnects on silicon substrates,” Nat. Photonics 8(6), 482–488 (2014).
[Crossref]

M.-S. Rouifed, D. Marris-Morini, P. Chaisakul, J. Frigerio, G. Isella, D. Chrastina, S. Edmond, X. Le Roux, J.-R. Coudevylle, D. Bouville, and L. Vivien, “Advances toward Ge/SiGe quantum-well waveguide modulators at 1.3μm,” IEEE J. Sel. Top. Quantum Electron. 20(4), 33 (2014).
[Crossref]

J. Frigerio, P. Chaisakul, D. Marris-Morini, S. Cecchi, M. S. Roufied, G. Isella, and L. Vivien, “Electro-refractive effect in Ge/SiGe multiple quantum wells,” Appl. Phys. Lett. 102(6), 061102 (2013).
[Crossref]

P. Chaisakul, D. Marris-Morini, M. S. Rouifed, G. Isella, D. Chrastina, J. Frigerio, X. Le Roux, S. Edmond, J.-R. Coudevylle, and L. Vivien, “23 GHz Ge/SiGe multiple quantum well electro-absorption modulator,” Opt. Express 20(3), 3219–3224 (2012).
[Crossref] [PubMed]

A. V. Krishnamoorthy, X. Zheng, D. Feng, J. Lexau, J. F. Buckwalter, H. D. Thacker, F. Liu, Y. Luo, E. Chang, P. Amberg, I. Shubin, S. S. Djordjevic, J. H. Lee, S. Lin, H. Liang, A. Abed, R. Shafiiha, K. Raj, R. Ho, M. Asghari, and J. E. Cunningham, “A low-power, high-speed, 9-channel germanium-silicon electro-absorption modulator array integrated with digital CMOS driver and wavelength multiplexer,” Opt. Express 22(10), 12289–12295 (2014).
[Crossref] [PubMed]

H. T. Chen, P. Verheyen, P. De Heyn, G. Lepage, J. De Coster, P. Absil, G. Roelkens, and J. Van Campenhout, “High-responsivity low-voltage 28-Gb/s p-i-n photodectector with silicon contacts,” J. Lightwave Technol. 33(4), 820–824 (2015).
[Crossref]

J. Liu, M. Beals, A. Pomerene, S. Bernardis, R. Sun, J. Cheng, L. C. Kimerling, and J. Michel, “Waveguide integrated, ultra-low energy GeSi electro-absorption modulators,” Nat. Photonics 2(7), 433–437 (2008).
[Crossref]

M. Cherchi, S. Ylinen, M. Harjanne, M. Kapulainen, and T. Aalto, “Dramatic size reduction of waveguide bends on a micron-scale silicon photonic platform,” Opt. Express 21(15), 17814–17823 (2013).
[Crossref] [PubMed]

M.-S. Rouifed, D. Marris-Morini, P. Chaisakul, J. Frigerio, G. Isella, D. Chrastina, S. Edmond, X. Le Roux, J.-R. Coudevylle, D. Bouville, and L. Vivien, “Advances toward Ge/SiGe quantum-well waveguide modulators at 1.3μm,” IEEE J. Sel. Top. Quantum Electron. 20(4), 33 (2014).
[Crossref]

P. Chaisakul, D. Marris-Morini, J. Frigerio, D. Chrastina, M. S. Rouifed, S. Cecchi, P. Crozat, G. Isella, and L. Vivien, “Integrated germanium optical interconnects on silicon substrates,” Nat. Photonics 8(6), 482–488 (2014).
[Crossref]

P. Chaisakul, D. Marris-Morini, M. S. Rouifed, G. Isella, D. Chrastina, J. Frigerio, X. Le Roux, S. Edmond, J.-R. Coudevylle, and L. Vivien, “23 GHz Ge/SiGe multiple quantum well electro-absorption modulator,” Opt. Express 20(3), 3219–3224 (2012).
[Crossref] [PubMed]

M.-S. Rouifed, D. Marris-Morini, P. Chaisakul, J. Frigerio, G. Isella, D. Chrastina, S. Edmond, X. Le Roux, J.-R. Coudevylle, D. Bouville, and L. Vivien, “Advances toward Ge/SiGe quantum-well waveguide modulators at 1.3μm,” IEEE J. Sel. Top. Quantum Electron. 20(4), 33 (2014).
[Crossref]

P. Chaisakul, D. Marris-Morini, M. S. Rouifed, G. Isella, D. Chrastina, J. Frigerio, X. Le Roux, S. Edmond, J.-R. Coudevylle, and L. Vivien, “23 GHz Ge/SiGe multiple quantum well electro-absorption modulator,” Opt. Express 20(3), 3219–3224 (2012).
[Crossref] [PubMed]

P. Chaisakul, D. Marris-Morini, J. Frigerio, D. Chrastina, M. S. Rouifed, S. Cecchi, P. Crozat, G. Isella, and L. Vivien, “Integrated germanium optical interconnects on silicon substrates,” Nat. Photonics 8(6), 482–488 (2014).
[Crossref]

L. Virot, P. Crozat, J.-M. Fédéli, J.-M. Hartmann, D. Marris-Morini, E. Cassan, F. Boeuf, and L. Vivien, “Germanium avalanche receiver for low power interconnects,” Nat. Commun. 5, 4957 (2014).
[Crossref] [PubMed]

A. V. Krishnamoorthy, X. Zheng, D. Feng, J. Lexau, J. F. Buckwalter, H. D. Thacker, F. Liu, Y. Luo, E. Chang, P. Amberg, I. Shubin, S. S. Djordjevic, J. H. Lee, S. Lin, H. Liang, A. Abed, R. Shafiiha, K. Raj, R. Ho, M. Asghari, and J. E. Cunningham, “A low-power, high-speed, 9-channel germanium-silicon electro-absorption modulator array integrated with digital CMOS driver and wavelength multiplexer,” Opt. Express 22(10), 12289–12295 (2014).
[Crossref] [PubMed]

H. T. Chen, P. Verheyen, P. De Heyn, G. Lepage, J. De Coster, P. Absil, G. Roelkens, and J. Van Campenhout, “High-responsivity low-voltage 28-Gb/s p-i-n photodectector with silicon contacts,” J. Lightwave Technol. 33(4), 820–824 (2015).
[Crossref]

H. T. Chen, P. Verheyen, P. De Heyn, G. Lepage, J. De Coster, P. Absil, G. Roelkens, and J. Van Campenhout, “High-responsivity low-voltage 28-Gb/s p-i-n photodectector with silicon contacts,” J. Lightwave Technol. 33(4), 820–824 (2015).
[Crossref]

L. H. Spiekman, Y. S. Oei, E. G. Metaal, F. H. Groen, P. Demeester, and M. K. Smit, “Ultrasmall waveguide bends: the corner mirrors of the future?” IEE Proc., Optoelectron. 142(1), 61–65 (1995).
[Crossref]

A. V. Krishnamoorthy, X. Zheng, D. Feng, J. Lexau, J. F. Buckwalter, H. D. Thacker, F. Liu, Y. Luo, E. Chang, P. Amberg, I. Shubin, S. S. Djordjevic, J. H. Lee, S. Lin, H. Liang, A. Abed, R. Shafiiha, K. Raj, R. Ho, M. Asghari, and J. E. Cunningham, “A low-power, high-speed, 9-channel germanium-silicon electro-absorption modulator array integrated with digital CMOS driver and wavelength multiplexer,” Opt. Express 22(10), 12289–12295 (2014).
[Crossref] [PubMed]

M.-S. Rouifed, D. Marris-Morini, P. Chaisakul, J. Frigerio, G. Isella, D. Chrastina, S. Edmond, X. Le Roux, J.-R. Coudevylle, D. Bouville, and L. Vivien, “Advances toward Ge/SiGe quantum-well waveguide modulators at 1.3μm,” IEEE J. Sel. Top. Quantum Electron. 20(4), 33 (2014).
[Crossref]

P. Chaisakul, D. Marris-Morini, M. S. Rouifed, G. Isella, D. Chrastina, J. Frigerio, X. Le Roux, S. Edmond, J.-R. Coudevylle, and L. Vivien, “23 GHz Ge/SiGe multiple quantum well electro-absorption modulator,” Opt. Express 20(3), 3219–3224 (2012).
[Crossref] [PubMed]

K. Hammani, M. A. Ettabib, A. Bogris, A. Kapsalis, D. Syvridis, M. Brun, P. Labeye, S. Nicoletti, D. J. Richardson, and P. Petropoulos, “Optical properties of silicon germanium waveguides at telecommunication wavelengths,” Opt. Express 21(14), 16690–16701 (2013).
[Crossref] [PubMed]

L. Virot, P. Crozat, J.-M. Fédéli, J.-M. Hartmann, D. Marris-Morini, E. Cassan, F. Boeuf, and L. Vivien, “Germanium avalanche receiver for low power interconnects,” Nat. Commun. 5, 4957 (2014).
[Crossref] [PubMed]

A. V. Krishnamoorthy, X. Zheng, D. Feng, J. Lexau, J. F. Buckwalter, H. D. Thacker, F. Liu, Y. Luo, E. Chang, P. Amberg, I. Shubin, S. S. Djordjevic, J. H. Lee, S. Lin, H. Liang, A. Abed, R. Shafiiha, K. Raj, R. Ho, M. Asghari, and J. E. Cunningham, “A low-power, high-speed, 9-channel germanium-silicon electro-absorption modulator array integrated with digital CMOS driver and wavelength multiplexer,” Opt. Express 22(10), 12289–12295 (2014).
[Crossref] [PubMed]

M.-S. Rouifed, D. Marris-Morini, P. Chaisakul, J. Frigerio, G. Isella, D. Chrastina, S. Edmond, X. Le Roux, J.-R. Coudevylle, D. Bouville, and L. Vivien, “Advances toward Ge/SiGe quantum-well waveguide modulators at 1.3μm,” IEEE J. Sel. Top. Quantum Electron. 20(4), 33 (2014).
[Crossref]

P. Chaisakul, D. Marris-Morini, J. Frigerio, D. Chrastina, M. S. Rouifed, S. Cecchi, P. Crozat, G. Isella, and L. Vivien, “Integrated germanium optical interconnects on silicon substrates,” Nat. Photonics 8(6), 482–488 (2014).
[Crossref]

J. Frigerio, P. Chaisakul, D. Marris-Morini, S. Cecchi, M. S. Roufied, G. Isella, and L. Vivien, “Electro-refractive effect in Ge/SiGe multiple quantum wells,” Appl. Phys. Lett. 102(6), 061102 (2013).
[Crossref]

P. Chaisakul, D. Marris-Morini, M. S. Rouifed, G. Isella, D. Chrastina, J. Frigerio, X. Le Roux, S. Edmond, J.-R. Coudevylle, and L. Vivien, “23 GHz Ge/SiGe multiple quantum well electro-absorption modulator,” Opt. Express 20(3), 3219–3224 (2012).
[Crossref] [PubMed]

C. G. Littlejohns, M. Nedeljkovic, C. F. Mallinson, J. F. Watts, G. Z. Mashanovich, G. T. Reed, and F. Y. Gardes, “Next generation device grade silicon-germanium on insulator,” Sci. Rep. 5, 8288 (2015).
[Crossref] [PubMed]

L. Lever, Y. Hu, M. Myronov, X. Liu, N. Owens, F. Y. Gardes, I. P. Marko, S. J. Sweeney, Z. Ikonić, D. R. Leadley, G. T. Reed, and R. W. Kelsall, “Modulation of the absorption coefficient at 1.3 μm in Ge/SiGe multiple quantum well heterostructures on silicon,” Opt. Lett. 36(21), 4158–4160 (2011).
[Crossref] [PubMed]

Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. Miller, and J. S. Harris, “Strong quantum-confined Stark effect in germanium quantum-well structures on silicon,” Nature 437(7063), 1334–1336 (2005).
[Crossref] [PubMed]

R. Koerner, M. Oehme, M. Gollhofer, M. Schmid, K. Kostecki, S. Bechler, D. Widmann, E. Kasper, and J. Schulze, “Electrically pumped lasing from Ge Fabry-Perot resonators on Si,” Opt. Express 23(11), 14815–14822 (2015).
[Crossref] [PubMed]

L. H. Spiekman, Y. S. Oei, E. G. Metaal, F. H. Groen, P. Demeester, and M. K. Smit, “Ultrasmall waveguide bends: the corner mirrors of the future?” IEE Proc., Optoelectron. 142(1), 61–65 (1995).
[Crossref]

S. F. Pesarcik, G. V. Treyz, S. S. Iyer, and J. M. Halbout, “Silicon germanium optical waveguides with 0.5 dB/cm losses for singlemode fibre optic systems,” Electron. Lett. 28(2), 159–160 (1992).
[Crossref]

K. Hammani, M. A. Ettabib, A. Bogris, A. Kapsalis, D. Syvridis, M. Brun, P. Labeye, S. Nicoletti, D. J. Richardson, and P. Petropoulos, “Optical properties of silicon germanium waveguides at telecommunication wavelengths,” Opt. Express 21(14), 16690–16701 (2013).
[Crossref] [PubMed]

M. Cherchi, S. Ylinen, M. Harjanne, M. Kapulainen, and T. Aalto, “Dramatic size reduction of waveguide bends on a micron-scale silicon photonic platform,” Opt. Express 21(15), 17814–17823 (2013).
[Crossref] [PubMed]

Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. Miller, and J. S. Harris, “Strong quantum-confined Stark effect in germanium quantum-well structures on silicon,” Nature 437(7063), 1334–1336 (2005).
[Crossref] [PubMed]

L. Virot, P. Crozat, J.-M. Fédéli, J.-M. Hartmann, D. Marris-Morini, E. Cassan, F. Boeuf, and L. Vivien, “Germanium avalanche receiver for low power interconnects,” Nat. Commun. 5, 4957 (2014).
[Crossref] [PubMed]

K. Popovic, K. Wada, S. Akiyama, H. A. Haus, and J. Michel, “Air trenches for sharp silica waveguide bends,” J. Lightwave Technol. 20(9), 1762–1772 (2002).
[Crossref]

A. V. Krishnamoorthy, X. Zheng, D. Feng, J. Lexau, J. F. Buckwalter, H. D. Thacker, F. Liu, Y. Luo, E. Chang, P. Amberg, I. Shubin, S. S. Djordjevic, J. H. Lee, S. Lin, H. Liang, A. Abed, R. Shafiiha, K. Raj, R. Ho, M. Asghari, and J. E. Cunningham, “A low-power, high-speed, 9-channel germanium-silicon electro-absorption modulator array integrated with digital CMOS driver and wavelength multiplexer,” Opt. Express 22(10), 12289–12295 (2014).
[Crossref] [PubMed]

L. Lever, Y. Hu, M. Myronov, X. Liu, N. Owens, F. Y. Gardes, I. P. Marko, S. J. Sweeney, Z. Ikonić, D. R. Leadley, G. T. Reed, and R. W. Kelsall, “Modulation of the absorption coefficient at 1.3 μm in Ge/SiGe multiple quantum well heterostructures on silicon,” Opt. Lett. 36(21), 4158–4160 (2011).
[Crossref] [PubMed]

L. Lever, Y. Hu, M. Myronov, X. Liu, N. Owens, F. Y. Gardes, I. P. Marko, S. J. Sweeney, Z. Ikonić, D. R. Leadley, G. T. Reed, and R. W. Kelsall, “Modulation of the absorption coefficient at 1.3 μm in Ge/SiGe multiple quantum well heterostructures on silicon,” Opt. Lett. 36(21), 4158–4160 (2011).
[Crossref] [PubMed]

P. Chaisakul, D. Marris-Morini, J. Frigerio, D. Chrastina, M. S. Rouifed, S. Cecchi, P. Crozat, G. Isella, and L. Vivien, “Integrated germanium optical interconnects on silicon substrates,” Nat. Photonics 8(6), 482–488 (2014).
[Crossref]

M.-S. Rouifed, D. Marris-Morini, P. Chaisakul, J. Frigerio, G. Isella, D. Chrastina, S. Edmond, X. Le Roux, J.-R. Coudevylle, D. Bouville, and L. Vivien, “Advances toward Ge/SiGe quantum-well waveguide modulators at 1.3μm,” IEEE J. Sel. Top. Quantum Electron. 20(4), 33 (2014).
[Crossref]

J. Frigerio, P. Chaisakul, D. Marris-Morini, S. Cecchi, M. S. Roufied, G. Isella, and L. Vivien, “Electro-refractive effect in Ge/SiGe multiple quantum wells,” Appl. Phys. Lett. 102(6), 061102 (2013).
[Crossref]

P. Chaisakul, D. Marris-Morini, M. S. Rouifed, G. Isella, D. Chrastina, J. Frigerio, X. Le Roux, S. Edmond, J.-R. Coudevylle, and L. Vivien, “23 GHz Ge/SiGe multiple quantum well electro-absorption modulator,” Opt. Express 20(3), 3219–3224 (2012).
[Crossref] [PubMed]

S. F. Pesarcik, G. V. Treyz, S. S. Iyer, and J. M. Halbout, “Silicon germanium optical waveguides with 0.5 dB/cm losses for singlemode fibre optic systems,” Electron. Lett. 28(2), 159–160 (1992).
[Crossref]

Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. Miller, and J. S. Harris, “Strong quantum-confined Stark effect in germanium quantum-well structures on silicon,” Nature 437(7063), 1334–1336 (2005).
[Crossref] [PubMed]

K. Hammani, M. A. Ettabib, A. Bogris, A. Kapsalis, D. Syvridis, M. Brun, P. Labeye, S. Nicoletti, D. J. Richardson, and P. Petropoulos, “Optical properties of silicon germanium waveguides at telecommunication wavelengths,” Opt. Express 21(14), 16690–16701 (2013).
[Crossref] [PubMed]

M. Cherchi, S. Ylinen, M. Harjanne, M. Kapulainen, and T. Aalto, “Dramatic size reduction of waveguide bends on a micron-scale silicon photonic platform,” Opt. Express 21(15), 17814–17823 (2013).
[Crossref] [PubMed]

R. Koerner, M. Oehme, M. Gollhofer, M. Schmid, K. Kostecki, S. Bechler, D. Widmann, E. Kasper, and J. Schulze, “Electrically pumped lasing from Ge Fabry-Perot resonators on Si,” Opt. Express 23(11), 14815–14822 (2015).
[Crossref] [PubMed]

T. Kitoh, N. Takato, M. Yasu, and M. Kawachi, “Bending loss reduction in silica-based waveguides by using lateral offsets,” J. Lightwave Technol. 13(4), 555–562 (1995).
[Crossref]

L. Lever, Y. Hu, M. Myronov, X. Liu, N. Owens, F. Y. Gardes, I. P. Marko, S. J. Sweeney, Z. Ikonić, D. R. Leadley, G. T. Reed, and R. W. Kelsall, “Modulation of the absorption coefficient at 1.3 μm in Ge/SiGe multiple quantum well heterostructures on silicon,” Opt. Lett. 36(21), 4158–4160 (2011).
[Crossref] [PubMed]

R. E. Camacho-Aguilera, Y. Cai, N. Patel, J. T. Bessette, M. Romagnoli, L. C. Kimerling, and J. Michel, “An electrically pumped germanium laser,” Opt. Express 20(10), 11316–11320 (2012).
[Crossref] [PubMed]

J. Liu, M. Beals, A. Pomerene, S. Bernardis, R. Sun, J. Cheng, L. C. Kimerling, and J. Michel, “Waveguide integrated, ultra-low energy GeSi electro-absorption modulators,” Nat. Photonics 2(7), 433–437 (2008).
[Crossref]

T. Kitoh, N. Takato, M. Yasu, and M. Kawachi, “Bending loss reduction in silica-based waveguides by using lateral offsets,” J. Lightwave Technol. 13(4), 555–562 (1995).
[Crossref]

R. Koerner, M. Oehme, M. Gollhofer, M. Schmid, K. Kostecki, S. Bechler, D. Widmann, E. Kasper, and J. Schulze, “Electrically pumped lasing from Ge Fabry-Perot resonators on Si,” Opt. Express 23(11), 14815–14822 (2015).
[Crossref] [PubMed]

R. Koerner, M. Oehme, M. Gollhofer, M. Schmid, K. Kostecki, S. Bechler, D. Widmann, E. Kasper, and J. Schulze, “Electrically pumped lasing from Ge Fabry-Perot resonators on Si,” Opt. Express 23(11), 14815–14822 (2015).
[Crossref] [PubMed]

A. V. Krishnamoorthy, X. Zheng, D. Feng, J. Lexau, J. F. Buckwalter, H. D. Thacker, F. Liu, Y. Luo, E. Chang, P. Amberg, I. Shubin, S. S. Djordjevic, J. H. Lee, S. Lin, H. Liang, A. Abed, R. Shafiiha, K. Raj, R. Ho, M. Asghari, and J. E. Cunningham, “A low-power, high-speed, 9-channel germanium-silicon electro-absorption modulator array integrated with digital CMOS driver and wavelength multiplexer,” Opt. Express 22(10), 12289–12295 (2014).
[Crossref] [PubMed]

Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. Miller, and J. S. Harris, “Strong quantum-confined Stark effect in germanium quantum-well structures on silicon,” Nature 437(7063), 1334–1336 (2005).
[Crossref] [PubMed]

K. Hammani, M. A. Ettabib, A. Bogris, A. Kapsalis, D. Syvridis, M. Brun, P. Labeye, S. Nicoletti, D. J. Richardson, and P. Petropoulos, “Optical properties of silicon germanium waveguides at telecommunication wavelengths,” Opt. Express 21(14), 16690–16701 (2013).
[Crossref] [PubMed]

M.-S. Rouifed, D. Marris-Morini, P. Chaisakul, J. Frigerio, G. Isella, D. Chrastina, S. Edmond, X. Le Roux, J.-R. Coudevylle, D. Bouville, and L. Vivien, “Advances toward Ge/SiGe quantum-well waveguide modulators at 1.3μm,” IEEE J. Sel. Top. Quantum Electron. 20(4), 33 (2014).
[Crossref]

P. Chaisakul, D. Marris-Morini, M. S. Rouifed, G. Isella, D. Chrastina, J. Frigerio, X. Le Roux, S. Edmond, J.-R. Coudevylle, and L. Vivien, “23 GHz Ge/SiGe multiple quantum well electro-absorption modulator,” Opt. Express 20(3), 3219–3224 (2012).
[Crossref] [PubMed]

L. Lever, Y. Hu, M. Myronov, X. Liu, N. Owens, F. Y. Gardes, I. P. Marko, S. J. Sweeney, Z. Ikonić, D. R. Leadley, G. T. Reed, and R. W. Kelsall, “Modulation of the absorption coefficient at 1.3 μm in Ge/SiGe multiple quantum well heterostructures on silicon,” Opt. Lett. 36(21), 4158–4160 (2011).
[Crossref] [PubMed]

A. V. Krishnamoorthy, X. Zheng, D. Feng, J. Lexau, J. F. Buckwalter, H. D. Thacker, F. Liu, Y. Luo, E. Chang, P. Amberg, I. Shubin, S. S. Djordjevic, J. H. Lee, S. Lin, H. Liang, A. Abed, R. Shafiiha, K. Raj, R. Ho, M. Asghari, and J. E. Cunningham, “A low-power, high-speed, 9-channel germanium-silicon electro-absorption modulator array integrated with digital CMOS driver and wavelength multiplexer,” Opt. Express 22(10), 12289–12295 (2014).
[Crossref] [PubMed]

Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. Miller, and J. S. Harris, “Strong quantum-confined Stark effect in germanium quantum-well structures on silicon,” Nature 437(7063), 1334–1336 (2005).
[Crossref] [PubMed]

H. T. Chen, P. Verheyen, P. De Heyn, G. Lepage, J. De Coster, P. Absil, G. Roelkens, and J. Van Campenhout, “High-responsivity low-voltage 28-Gb/s p-i-n photodectector with silicon contacts,” J. Lightwave Technol. 33(4), 820–824 (2015).
[Crossref]

L. Lever, Y. Hu, M. Myronov, X. Liu, N. Owens, F. Y. Gardes, I. P. Marko, S. J. Sweeney, Z. Ikonić, D. R. Leadley, G. T. Reed, and R. W. Kelsall, “Modulation of the absorption coefficient at 1.3 μm in Ge/SiGe multiple quantum well heterostructures on silicon,” Opt. Lett. 36(21), 4158–4160 (2011).
[Crossref] [PubMed]

A. V. Krishnamoorthy, X. Zheng, D. Feng, J. Lexau, J. F. Buckwalter, H. D. Thacker, F. Liu, Y. Luo, E. Chang, P. Amberg, I. Shubin, S. S. Djordjevic, J. H. Lee, S. Lin, H. Liang, A. Abed, R. Shafiiha, K. Raj, R. Ho, M. Asghari, and J. E. Cunningham, “A low-power, high-speed, 9-channel germanium-silicon electro-absorption modulator array integrated with digital CMOS driver and wavelength multiplexer,” Opt. Express 22(10), 12289–12295 (2014).
[Crossref] [PubMed]

A. V. Krishnamoorthy, X. Zheng, D. Feng, J. Lexau, J. F. Buckwalter, H. D. Thacker, F. Liu, Y. Luo, E. Chang, P. Amberg, I. Shubin, S. S. Djordjevic, J. H. Lee, S. Lin, H. Liang, A. Abed, R. Shafiiha, K. Raj, R. Ho, M. Asghari, and J. E. Cunningham, “A low-power, high-speed, 9-channel germanium-silicon electro-absorption modulator array integrated with digital CMOS driver and wavelength multiplexer,” Opt. Express 22(10), 12289–12295 (2014).
[Crossref] [PubMed]

A. V. Krishnamoorthy, X. Zheng, D. Feng, J. Lexau, J. F. Buckwalter, H. D. Thacker, F. Liu, Y. Luo, E. Chang, P. Amberg, I. Shubin, S. S. Djordjevic, J. H. Lee, S. Lin, H. Liang, A. Abed, R. Shafiiha, K. Raj, R. Ho, M. Asghari, and J. E. Cunningham, “A low-power, high-speed, 9-channel germanium-silicon electro-absorption modulator array integrated with digital CMOS driver and wavelength multiplexer,” Opt. Express 22(10), 12289–12295 (2014).
[Crossref] [PubMed]

C. G. Littlejohns, M. Nedeljkovic, C. F. Mallinson, J. F. Watts, G. Z. Mashanovich, G. T. Reed, and F. Y. Gardes, “Next generation device grade silicon-germanium on insulator,” Sci. Rep. 5, 8288 (2015).
[Crossref] [PubMed]

A. V. Krishnamoorthy, X. Zheng, D. Feng, J. Lexau, J. F. Buckwalter, H. D. Thacker, F. Liu, Y. Luo, E. Chang, P. Amberg, I. Shubin, S. S. Djordjevic, J. H. Lee, S. Lin, H. Liang, A. Abed, R. Shafiiha, K. Raj, R. Ho, M. Asghari, and J. E. Cunningham, “A low-power, high-speed, 9-channel germanium-silicon electro-absorption modulator array integrated with digital CMOS driver and wavelength multiplexer,” Opt. Express 22(10), 12289–12295 (2014).
[Crossref] [PubMed]

J. Liu, “Monolithically integrated Ge-on-Si active photonics,” Photonics 1(3), 162–197 (2014).
[Crossref]

J. Liu, M. Beals, A. Pomerene, S. Bernardis, R. Sun, J. Cheng, L. C. Kimerling, and J. Michel, “Waveguide integrated, ultra-low energy GeSi electro-absorption modulators,” Nat. Photonics 2(7), 433–437 (2008).
[Crossref]

L. Lever, Y. Hu, M. Myronov, X. Liu, N. Owens, F. Y. Gardes, I. P. Marko, S. J. Sweeney, Z. Ikonić, D. R. Leadley, G. T. Reed, and R. W. Kelsall, “Modulation of the absorption coefficient at 1.3 μm in Ge/SiGe multiple quantum well heterostructures on silicon,” Opt. Lett. 36(21), 4158–4160 (2011).
[Crossref] [PubMed]

A. V. Krishnamoorthy, X. Zheng, D. Feng, J. Lexau, J. F. Buckwalter, H. D. Thacker, F. Liu, Y. Luo, E. Chang, P. Amberg, I. Shubin, S. S. Djordjevic, J. H. Lee, S. Lin, H. Liang, A. Abed, R. Shafiiha, K. Raj, R. Ho, M. Asghari, and J. E. Cunningham, “A low-power, high-speed, 9-channel germanium-silicon electro-absorption modulator array integrated with digital CMOS driver and wavelength multiplexer,” Opt. Express 22(10), 12289–12295 (2014).
[Crossref] [PubMed]

C. G. Littlejohns, M. Nedeljkovic, C. F. Mallinson, J. F. Watts, G. Z. Mashanovich, G. T. Reed, and F. Y. Gardes, “Next generation device grade silicon-germanium on insulator,” Sci. Rep. 5, 8288 (2015).
[Crossref] [PubMed]

L. Lever, Y. Hu, M. Myronov, X. Liu, N. Owens, F. Y. Gardes, I. P. Marko, S. J. Sweeney, Z. Ikonić, D. R. Leadley, G. T. Reed, and R. W. Kelsall, “Modulation of the absorption coefficient at 1.3 μm in Ge/SiGe multiple quantum well heterostructures on silicon,” Opt. Lett. 36(21), 4158–4160 (2011).
[Crossref] [PubMed]

L. Virot, P. Crozat, J.-M. Fédéli, J.-M. Hartmann, D. Marris-Morini, E. Cassan, F. Boeuf, and L. Vivien, “Germanium avalanche receiver for low power interconnects,” Nat. Commun. 5, 4957 (2014).
[Crossref] [PubMed]

M.-S. Rouifed, D. Marris-Morini, P. Chaisakul, J. Frigerio, G. Isella, D. Chrastina, S. Edmond, X. Le Roux, J.-R. Coudevylle, D. Bouville, and L. Vivien, “Advances toward Ge/SiGe quantum-well waveguide modulators at 1.3μm,” IEEE J. Sel. Top. Quantum Electron. 20(4), 33 (2014).
[Crossref]

P. Chaisakul, D. Marris-Morini, J. Frigerio, D. Chrastina, M. S. Rouifed, S. Cecchi, P. Crozat, G. Isella, and L. Vivien, “Integrated germanium optical interconnects on silicon substrates,” Nat. Photonics 8(6), 482–488 (2014).
[Crossref]

J. Frigerio, P. Chaisakul, D. Marris-Morini, S. Cecchi, M. S. Roufied, G. Isella, and L. Vivien, “Electro-refractive effect in Ge/SiGe multiple quantum wells,” Appl. Phys. Lett. 102(6), 061102 (2013).
[Crossref]

P. Chaisakul, D. Marris-Morini, M. S. Rouifed, G. Isella, D. Chrastina, J. Frigerio, X. Le Roux, S. Edmond, J.-R. Coudevylle, and L. Vivien, “23 GHz Ge/SiGe multiple quantum well electro-absorption modulator,” Opt. Express 20(3), 3219–3224 (2012).
[Crossref] [PubMed]

C. G. Littlejohns, M. Nedeljkovic, C. F. Mallinson, J. F. Watts, G. Z. Mashanovich, G. T. Reed, and F. Y. Gardes, “Next generation device grade silicon-germanium on insulator,” Sci. Rep. 5, 8288 (2015).
[Crossref] [PubMed]

L. H. Spiekman, Y. S. Oei, E. G. Metaal, F. H. Groen, P. Demeester, and M. K. Smit, “Ultrasmall waveguide bends: the corner mirrors of the future?” IEE Proc., Optoelectron. 142(1), 61–65 (1995).
[Crossref]

R. E. Camacho-Aguilera, Y. Cai, N. Patel, J. T. Bessette, M. Romagnoli, L. C. Kimerling, and J. Michel, “An electrically pumped germanium laser,” Opt. Express 20(10), 11316–11320 (2012).
[Crossref] [PubMed]

J. Liu, M. Beals, A. Pomerene, S. Bernardis, R. Sun, J. Cheng, L. C. Kimerling, and J. Michel, “Waveguide integrated, ultra-low energy GeSi electro-absorption modulators,” Nat. Photonics 2(7), 433–437 (2008).
[Crossref]

K. Popovic, K. Wada, S. Akiyama, H. A. Haus, and J. Michel, “Air trenches for sharp silica waveguide bends,” J. Lightwave Technol. 20(9), 1762–1772 (2002).
[Crossref]

Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. Miller, and J. S. Harris, “Strong quantum-confined Stark effect in germanium quantum-well structures on silicon,” Nature 437(7063), 1334–1336 (2005).
[Crossref] [PubMed]

L. Lever, Y. Hu, M. Myronov, X. Liu, N. Owens, F. Y. Gardes, I. P. Marko, S. J. Sweeney, Z. Ikonić, D. R. Leadley, G. T. Reed, and R. W. Kelsall, “Modulation of the absorption coefficient at 1.3 μm in Ge/SiGe multiple quantum well heterostructures on silicon,” Opt. Lett. 36(21), 4158–4160 (2011).
[Crossref] [PubMed]

C. G. Littlejohns, M. Nedeljkovic, C. F. Mallinson, J. F. Watts, G. Z. Mashanovich, G. T. Reed, and F. Y. Gardes, “Next generation device grade silicon-germanium on insulator,” Sci. Rep. 5, 8288 (2015).
[Crossref] [PubMed]

K. Hammani, M. A. Ettabib, A. Bogris, A. Kapsalis, D. Syvridis, M. Brun, P. Labeye, S. Nicoletti, D. J. Richardson, and P. Petropoulos, “Optical properties of silicon germanium waveguides at telecommunication wavelengths,” Opt. Express 21(14), 16690–16701 (2013).
[Crossref] [PubMed]

R. Koerner, M. Oehme, M. Gollhofer, M. Schmid, K. Kostecki, S. Bechler, D. Widmann, E. Kasper, and J. Schulze, “Electrically pumped lasing from Ge Fabry-Perot resonators on Si,” Opt. Express 23(11), 14815–14822 (2015).
[Crossref] [PubMed]

L. H. Spiekman, Y. S. Oei, E. G. Metaal, F. H. Groen, P. Demeester, and M. K. Smit, “Ultrasmall waveguide bends: the corner mirrors of the future?” IEE Proc., Optoelectron. 142(1), 61–65 (1995).
[Crossref]

L. Lever, Y. Hu, M. Myronov, X. Liu, N. Owens, F. Y. Gardes, I. P. Marko, S. J. Sweeney, Z. Ikonić, D. R. Leadley, G. T. Reed, and R. W. Kelsall, “Modulation of the absorption coefficient at 1.3 μm in Ge/SiGe multiple quantum well heterostructures on silicon,” Opt. Lett. 36(21), 4158–4160 (2011).
[Crossref] [PubMed]

R. E. Camacho-Aguilera, Y. Cai, N. Patel, J. T. Bessette, M. Romagnoli, L. C. Kimerling, and J. Michel, “An electrically pumped germanium laser,” Opt. Express 20(10), 11316–11320 (2012).
[Crossref] [PubMed]

S. F. Pesarcik, G. V. Treyz, S. S. Iyer, and J. M. Halbout, “Silicon germanium optical waveguides with 0.5 dB/cm losses for singlemode fibre optic systems,” Electron. Lett. 28(2), 159–160 (1992).
[Crossref]

K. Hammani, M. A. Ettabib, A. Bogris, A. Kapsalis, D. Syvridis, M. Brun, P. Labeye, S. Nicoletti, D. J. Richardson, and P. Petropoulos, “Optical properties of silicon germanium waveguides at telecommunication wavelengths,” Opt. Express 21(14), 16690–16701 (2013).
[Crossref] [PubMed]

S. P. Pogossian, L. Vescan, and A. Vonsovici, “High-confinement SiGe low-loss waveguides for Si-based optoelectronics,” Appl. Phys. Lett. 75(10), 1440 (1999).
[Crossref]

J. Liu, M. Beals, A. Pomerene, S. Bernardis, R. Sun, J. Cheng, L. C. Kimerling, and J. Michel, “Waveguide integrated, ultra-low energy GeSi electro-absorption modulators,” Nat. Photonics 2(7), 433–437 (2008).
[Crossref]

K. Popovic, K. Wada, S. Akiyama, H. A. Haus, and J. Michel, “Air trenches for sharp silica waveguide bends,” J. Lightwave Technol. 20(9), 1762–1772 (2002).
[Crossref]

A. V. Krishnamoorthy, X. Zheng, D. Feng, J. Lexau, J. F. Buckwalter, H. D. Thacker, F. Liu, Y. Luo, E. Chang, P. Amberg, I. Shubin, S. S. Djordjevic, J. H. Lee, S. Lin, H. Liang, A. Abed, R. Shafiiha, K. Raj, R. Ho, M. Asghari, and J. E. Cunningham, “A low-power, high-speed, 9-channel germanium-silicon electro-absorption modulator array integrated with digital CMOS driver and wavelength multiplexer,” Opt. Express 22(10), 12289–12295 (2014).
[Crossref] [PubMed]

C. G. Littlejohns, M. Nedeljkovic, C. F. Mallinson, J. F. Watts, G. Z. Mashanovich, G. T. Reed, and F. Y. Gardes, “Next generation device grade silicon-germanium on insulator,” Sci. Rep. 5, 8288 (2015).
[Crossref] [PubMed]

L. Lever, Y. Hu, M. Myronov, X. Liu, N. Owens, F. Y. Gardes, I. P. Marko, S. J. Sweeney, Z. Ikonić, D. R. Leadley, G. T. Reed, and R. W. Kelsall, “Modulation of the absorption coefficient at 1.3 μm in Ge/SiGe multiple quantum well heterostructures on silicon,” Opt. Lett. 36(21), 4158–4160 (2011).
[Crossref] [PubMed]

Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. Miller, and J. S. Harris, “Strong quantum-confined Stark effect in germanium quantum-well structures on silicon,” Nature 437(7063), 1334–1336 (2005).
[Crossref] [PubMed]

K. Hammani, M. A. Ettabib, A. Bogris, A. Kapsalis, D. Syvridis, M. Brun, P. Labeye, S. Nicoletti, D. J. Richardson, and P. Petropoulos, “Optical properties of silicon germanium waveguides at telecommunication wavelengths,” Opt. Express 21(14), 16690–16701 (2013).
[Crossref] [PubMed]

H. T. Chen, P. Verheyen, P. De Heyn, G. Lepage, J. De Coster, P. Absil, G. Roelkens, and J. Van Campenhout, “High-responsivity low-voltage 28-Gb/s p-i-n photodectector with silicon contacts,” J. Lightwave Technol. 33(4), 820–824 (2015).
[Crossref]

R. E. Camacho-Aguilera, Y. Cai, N. Patel, J. T. Bessette, M. Romagnoli, L. C. Kimerling, and J. Michel, “An electrically pumped germanium laser,” Opt. Express 20(10), 11316–11320 (2012).
[Crossref] [PubMed]

Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. Miller, and J. S. Harris, “Strong quantum-confined Stark effect in germanium quantum-well structures on silicon,” Nature 437(7063), 1334–1336 (2005).
[Crossref] [PubMed]

J. Frigerio, P. Chaisakul, D. Marris-Morini, S. Cecchi, M. S. Roufied, G. Isella, and L. Vivien, “Electro-refractive effect in Ge/SiGe multiple quantum wells,” Appl. Phys. Lett. 102(6), 061102 (2013).
[Crossref]

P. Chaisakul, D. Marris-Morini, J. Frigerio, D. Chrastina, M. S. Rouifed, S. Cecchi, P. Crozat, G. Isella, and L. Vivien, “Integrated germanium optical interconnects on silicon substrates,” Nat. Photonics 8(6), 482–488 (2014).
[Crossref]

P. Chaisakul, D. Marris-Morini, M. S. Rouifed, G. Isella, D. Chrastina, J. Frigerio, X. Le Roux, S. Edmond, J.-R. Coudevylle, and L. Vivien, “23 GHz Ge/SiGe multiple quantum well electro-absorption modulator,” Opt. Express 20(3), 3219–3224 (2012).
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M.-S. Rouifed, D. Marris-Morini, P. Chaisakul, J. Frigerio, G. Isella, D. Chrastina, S. Edmond, X. Le Roux, J.-R. Coudevylle, D. Bouville, and L. Vivien, “Advances toward Ge/SiGe quantum-well waveguide modulators at 1.3μm,” IEEE J. Sel. Top. Quantum Electron. 20(4), 33 (2014).
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R. Koerner, M. Oehme, M. Gollhofer, M. Schmid, K. Kostecki, S. Bechler, D. Widmann, E. Kasper, and J. Schulze, “Electrically pumped lasing from Ge Fabry-Perot resonators on Si,” Opt. Express 23(11), 14815–14822 (2015).
[Crossref] [PubMed]

R. Koerner, M. Oehme, M. Gollhofer, M. Schmid, K. Kostecki, S. Bechler, D. Widmann, E. Kasper, and J. Schulze, “Electrically pumped lasing from Ge Fabry-Perot resonators on Si,” Opt. Express 23(11), 14815–14822 (2015).
[Crossref] [PubMed]

A. V. Krishnamoorthy, X. Zheng, D. Feng, J. Lexau, J. F. Buckwalter, H. D. Thacker, F. Liu, Y. Luo, E. Chang, P. Amberg, I. Shubin, S. S. Djordjevic, J. H. Lee, S. Lin, H. Liang, A. Abed, R. Shafiiha, K. Raj, R. Ho, M. Asghari, and J. E. Cunningham, “A low-power, high-speed, 9-channel germanium-silicon electro-absorption modulator array integrated with digital CMOS driver and wavelength multiplexer,” Opt. Express 22(10), 12289–12295 (2014).
[Crossref] [PubMed]

A. V. Krishnamoorthy, X. Zheng, D. Feng, J. Lexau, J. F. Buckwalter, H. D. Thacker, F. Liu, Y. Luo, E. Chang, P. Amberg, I. Shubin, S. S. Djordjevic, J. H. Lee, S. Lin, H. Liang, A. Abed, R. Shafiiha, K. Raj, R. Ho, M. Asghari, and J. E. Cunningham, “A low-power, high-speed, 9-channel germanium-silicon electro-absorption modulator array integrated with digital CMOS driver and wavelength multiplexer,” Opt. Express 22(10), 12289–12295 (2014).
[Crossref] [PubMed]

L. H. Spiekman, Y. S. Oei, E. G. Metaal, F. H. Groen, P. Demeester, and M. K. Smit, “Ultrasmall waveguide bends: the corner mirrors of the future?” IEE Proc., Optoelectron. 142(1), 61–65 (1995).
[Crossref]

L. H. Spiekman, Y. S. Oei, E. G. Metaal, F. H. Groen, P. Demeester, and M. K. Smit, “Ultrasmall waveguide bends: the corner mirrors of the future?” IEE Proc., Optoelectron. 142(1), 61–65 (1995).
[Crossref]

J. Liu, M. Beals, A. Pomerene, S. Bernardis, R. Sun, J. Cheng, L. C. Kimerling, and J. Michel, “Waveguide integrated, ultra-low energy GeSi electro-absorption modulators,” Nat. Photonics 2(7), 433–437 (2008).
[Crossref]

L. Lever, Y. Hu, M. Myronov, X. Liu, N. Owens, F. Y. Gardes, I. P. Marko, S. J. Sweeney, Z. Ikonić, D. R. Leadley, G. T. Reed, and R. W. Kelsall, “Modulation of the absorption coefficient at 1.3 μm in Ge/SiGe multiple quantum well heterostructures on silicon,” Opt. Lett. 36(21), 4158–4160 (2011).
[Crossref] [PubMed]

K. Hammani, M. A. Ettabib, A. Bogris, A. Kapsalis, D. Syvridis, M. Brun, P. Labeye, S. Nicoletti, D. J. Richardson, and P. Petropoulos, “Optical properties of silicon germanium waveguides at telecommunication wavelengths,” Opt. Express 21(14), 16690–16701 (2013).
[Crossref] [PubMed]

T. Kitoh, N. Takato, M. Yasu, and M. Kawachi, “Bending loss reduction in silica-based waveguides by using lateral offsets,” J. Lightwave Technol. 13(4), 555–562 (1995).
[Crossref]

A. V. Krishnamoorthy, X. Zheng, D. Feng, J. Lexau, J. F. Buckwalter, H. D. Thacker, F. Liu, Y. Luo, E. Chang, P. Amberg, I. Shubin, S. S. Djordjevic, J. H. Lee, S. Lin, H. Liang, A. Abed, R. Shafiiha, K. Raj, R. Ho, M. Asghari, and J. E. Cunningham, “A low-power, high-speed, 9-channel germanium-silicon electro-absorption modulator array integrated with digital CMOS driver and wavelength multiplexer,” Opt. Express 22(10), 12289–12295 (2014).
[Crossref] [PubMed]

S. F. Pesarcik, G. V. Treyz, S. S. Iyer, and J. M. Halbout, “Silicon germanium optical waveguides with 0.5 dB/cm losses for singlemode fibre optic systems,” Electron. Lett. 28(2), 159–160 (1992).
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H. T. Chen, P. Verheyen, P. De Heyn, G. Lepage, J. De Coster, P. Absil, G. Roelkens, and J. Van Campenhout, “High-responsivity low-voltage 28-Gb/s p-i-n photodectector with silicon contacts,” J. Lightwave Technol. 33(4), 820–824 (2015).
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H. T. Chen, P. Verheyen, P. De Heyn, G. Lepage, J. De Coster, P. Absil, G. Roelkens, and J. Van Campenhout, “High-responsivity low-voltage 28-Gb/s p-i-n photodectector with silicon contacts,” J. Lightwave Technol. 33(4), 820–824 (2015).
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S. P. Pogossian, L. Vescan, and A. Vonsovici, “High-confinement SiGe low-loss waveguides for Si-based optoelectronics,” Appl. Phys. Lett. 75(10), 1440 (1999).
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L. Virot, P. Crozat, J.-M. Fédéli, J.-M. Hartmann, D. Marris-Morini, E. Cassan, F. Boeuf, and L. Vivien, “Germanium avalanche receiver for low power interconnects,” Nat. Commun. 5, 4957 (2014).
[Crossref] [PubMed]

M.-S. Rouifed, D. Marris-Morini, P. Chaisakul, J. Frigerio, G. Isella, D. Chrastina, S. Edmond, X. Le Roux, J.-R. Coudevylle, D. Bouville, and L. Vivien, “Advances toward Ge/SiGe quantum-well waveguide modulators at 1.3μm,” IEEE J. Sel. Top. Quantum Electron. 20(4), 33 (2014).
[Crossref]

P. Chaisakul, D. Marris-Morini, J. Frigerio, D. Chrastina, M. S. Rouifed, S. Cecchi, P. Crozat, G. Isella, and L. Vivien, “Integrated germanium optical interconnects on silicon substrates,” Nat. Photonics 8(6), 482–488 (2014).
[Crossref]

L. Virot, P. Crozat, J.-M. Fédéli, J.-M. Hartmann, D. Marris-Morini, E. Cassan, F. Boeuf, and L. Vivien, “Germanium avalanche receiver for low power interconnects,” Nat. Commun. 5, 4957 (2014).
[Crossref] [PubMed]

J. Frigerio, P. Chaisakul, D. Marris-Morini, S. Cecchi, M. S. Roufied, G. Isella, and L. Vivien, “Electro-refractive effect in Ge/SiGe multiple quantum wells,” Appl. Phys. Lett. 102(6), 061102 (2013).
[Crossref]

P. Chaisakul, D. Marris-Morini, M. S. Rouifed, G. Isella, D. Chrastina, J. Frigerio, X. Le Roux, S. Edmond, J.-R. Coudevylle, and L. Vivien, “23 GHz Ge/SiGe multiple quantum well electro-absorption modulator,” Opt. Express 20(3), 3219–3224 (2012).
[Crossref] [PubMed]

S. P. Pogossian, L. Vescan, and A. Vonsovici, “High-confinement SiGe low-loss waveguides for Si-based optoelectronics,” Appl. Phys. Lett. 75(10), 1440 (1999).
[Crossref]

K. Popovic, K. Wada, S. Akiyama, H. A. Haus, and J. Michel, “Air trenches for sharp silica waveguide bends,” J. Lightwave Technol. 20(9), 1762–1772 (2002).
[Crossref]

C. G. Littlejohns, M. Nedeljkovic, C. F. Mallinson, J. F. Watts, G. Z. Mashanovich, G. T. Reed, and F. Y. Gardes, “Next generation device grade silicon-germanium on insulator,” Sci. Rep. 5, 8288 (2015).
[Crossref] [PubMed]

R. Koerner, M. Oehme, M. Gollhofer, M. Schmid, K. Kostecki, S. Bechler, D. Widmann, E. Kasper, and J. Schulze, “Electrically pumped lasing from Ge Fabry-Perot resonators on Si,” Opt. Express 23(11), 14815–14822 (2015).
[Crossref] [PubMed]

T. Kitoh, N. Takato, M. Yasu, and M. Kawachi, “Bending loss reduction in silica-based waveguides by using lateral offsets,” J. Lightwave Technol. 13(4), 555–562 (1995).
[Crossref]

M. Cherchi, S. Ylinen, M. Harjanne, M. Kapulainen, and T. Aalto, “Dramatic size reduction of waveguide bends on a micron-scale silicon photonic platform,” Opt. Express 21(15), 17814–17823 (2013).
[Crossref] [PubMed]

A. V. Krishnamoorthy, X. Zheng, D. Feng, J. Lexau, J. F. Buckwalter, H. D. Thacker, F. Liu, Y. Luo, E. Chang, P. Amberg, I. Shubin, S. S. Djordjevic, J. H. Lee, S. Lin, H. Liang, A. Abed, R. Shafiiha, K. Raj, R. Ho, M. Asghari, and J. E. Cunningham, “A low-power, high-speed, 9-channel germanium-silicon electro-absorption modulator array integrated with digital CMOS driver and wavelength multiplexer,” Opt. Express 22(10), 12289–12295 (2014).
[Crossref] [PubMed]

S. P. Pogossian, L. Vescan, and A. Vonsovici, “High-confinement SiGe low-loss waveguides for Si-based optoelectronics,” Appl. Phys. Lett. 75(10), 1440 (1999).
[Crossref]

J. Frigerio, P. Chaisakul, D. Marris-Morini, S. Cecchi, M. S. Roufied, G. Isella, and L. Vivien, “Electro-refractive effect in Ge/SiGe multiple quantum wells,” Appl. Phys. Lett. 102(6), 061102 (2013).
[Crossref]

S. F. Pesarcik, G. V. Treyz, S. S. Iyer, and J. M. Halbout, “Silicon germanium optical waveguides with 0.5 dB/cm losses for singlemode fibre optic systems,” Electron. Lett. 28(2), 159–160 (1992).
[Crossref]

L. H. Spiekman, Y. S. Oei, E. G. Metaal, F. H. Groen, P. Demeester, and M. K. Smit, “Ultrasmall waveguide bends: the corner mirrors of the future?” IEE Proc., Optoelectron. 142(1), 61–65 (1995).
[Crossref]

M.-S. Rouifed, D. Marris-Morini, P. Chaisakul, J. Frigerio, G. Isella, D. Chrastina, S. Edmond, X. Le Roux, J.-R. Coudevylle, D. Bouville, and L. Vivien, “Advances toward Ge/SiGe quantum-well waveguide modulators at 1.3μm,” IEEE J. Sel. Top. Quantum Electron. 20(4), 33 (2014).
[Crossref]

K. Popovic, K. Wada, S. Akiyama, H. A. Haus, and J. Michel, “Air trenches for sharp silica waveguide bends,” J. Lightwave Technol. 20(9), 1762–1772 (2002).
[Crossref]

H. T. Chen, P. Verheyen, P. De Heyn, G. Lepage, J. De Coster, P. Absil, G. Roelkens, and J. Van Campenhout, “High-responsivity low-voltage 28-Gb/s p-i-n photodectector with silicon contacts,” J. Lightwave Technol. 33(4), 820–824 (2015).
[Crossref]

T. Kitoh, N. Takato, M. Yasu, and M. Kawachi, “Bending loss reduction in silica-based waveguides by using lateral offsets,” J. Lightwave Technol. 13(4), 555–562 (1995).
[Crossref]

L. Virot, P. Crozat, J.-M. Fédéli, J.-M. Hartmann, D. Marris-Morini, E. Cassan, F. Boeuf, and L. Vivien, “Germanium avalanche receiver for low power interconnects,” Nat. Commun. 5, 4957 (2014).
[Crossref] [PubMed]

J. Liu, M. Beals, A. Pomerene, S. Bernardis, R. Sun, J. Cheng, L. C. Kimerling, and J. Michel, “Waveguide integrated, ultra-low energy GeSi electro-absorption modulators,” Nat. Photonics 2(7), 433–437 (2008).
[Crossref]

P. Chaisakul, D. Marris-Morini, J. Frigerio, D. Chrastina, M. S. Rouifed, S. Cecchi, P. Crozat, G. Isella, and L. Vivien, “Integrated germanium optical interconnects on silicon substrates,” Nat. Photonics 8(6), 482–488 (2014).
[Crossref]

Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. Miller, and J. S. Harris, “Strong quantum-confined Stark effect in germanium quantum-well structures on silicon,” Nature 437(7063), 1334–1336 (2005).
[Crossref] [PubMed]

R. Koerner, M. Oehme, M. Gollhofer, M. Schmid, K. Kostecki, S. Bechler, D. Widmann, E. Kasper, and J. Schulze, “Electrically pumped lasing from Ge Fabry-Perot resonators on Si,” Opt. Express 23(11), 14815–14822 (2015).
[Crossref] [PubMed]

R. E. Camacho-Aguilera, Y. Cai, N. Patel, J. T. Bessette, M. Romagnoli, L. C. Kimerling, and J. Michel, “An electrically pumped germanium laser,” Opt. Express 20(10), 11316–11320 (2012).
[Crossref] [PubMed]

A. V. Krishnamoorthy, X. Zheng, D. Feng, J. Lexau, J. F. Buckwalter, H. D. Thacker, F. Liu, Y. Luo, E. Chang, P. Amberg, I. Shubin, S. S. Djordjevic, J. H. Lee, S. Lin, H. Liang, A. Abed, R. Shafiiha, K. Raj, R. Ho, M. Asghari, and J. E. Cunningham, “A low-power, high-speed, 9-channel germanium-silicon electro-absorption modulator array integrated with digital CMOS driver and wavelength multiplexer,” Opt. Express 22(10), 12289–12295 (2014).
[Crossref] [PubMed]

P. Chaisakul, D. Marris-Morini, M. S. Rouifed, G. Isella, D. Chrastina, J. Frigerio, X. Le Roux, S. Edmond, J.-R. Coudevylle, and L. Vivien, “23 GHz Ge/SiGe multiple quantum well electro-absorption modulator,” Opt. Express 20(3), 3219–3224 (2012).
[Crossref] [PubMed]

K. Hammani, M. A. Ettabib, A. Bogris, A. Kapsalis, D. Syvridis, M. Brun, P. Labeye, S. Nicoletti, D. J. Richardson, and P. Petropoulos, “Optical properties of silicon germanium waveguides at telecommunication wavelengths,” Opt. Express 21(14), 16690–16701 (2013).
[Crossref] [PubMed]

M. Cherchi, S. Ylinen, M. Harjanne, M. Kapulainen, and T. Aalto, “Dramatic size reduction of waveguide bends on a micron-scale silicon photonic platform,” Opt. Express 21(15), 17814–17823 (2013).
[Crossref] [PubMed]

L. Lever, Y. Hu, M. Myronov, X. Liu, N. Owens, F. Y. Gardes, I. P. Marko, S. J. Sweeney, Z. Ikonić, D. R. Leadley, G. T. Reed, and R. W. Kelsall, “Modulation of the absorption coefficient at 1.3 μm in Ge/SiGe multiple quantum well heterostructures on silicon,” Opt. Lett. 36(21), 4158–4160 (2011).
[Crossref] [PubMed]

J. Liu, “Monolithically integrated Ge-on-Si active photonics,” Photonics 1(3), 162–197 (2014).
[Crossref]

C. G. Littlejohns, M. Nedeljkovic, C. F. Mallinson, J. F. Watts, G. Z. Mashanovich, G. T. Reed, and F. Y. Gardes, “Next generation device grade silicon-germanium on insulator,” Sci. Rep. 5, 8288 (2015).
[Crossref] [PubMed]