Abstract

High-energy passively Q-switched operation of a Yb:GdCa4O(BO3)3 laser is demonstrated, with a GaAs crystal plate acting as saturable absorber. An average output power of 1.31 W at 1027 nm is produced at a pulse repetition rate of 1.92 kHz, the resulting pulse energy, duration, and peak power being respectively 0.68 mJ, 9.0 ns, and 75.6 kW. The shortest pulse duration obtained is 4.9 ns; whereas the maximum pulse energy achievable amounts to 0.83 mJ, which proves to be nearly one order of magnitude higher than ever generated from Yb or Nd lasers passively Q-switched by a GaAs saturable absorber.

© 2015 Optical Society of America

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    [PubMed]
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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
  19. S. Zhao, L. Chen, H. Zhao, G. Li, L. Zhang, and K. Yang, “Laser-diode-pumped passively Q-switched Nd3+:NaY(WO4)2 laser with GaAs saturable absorber,” Opt. Laser Technol. 37(3), 187–191 (2005).
    [Crossref]
  20. W. Cong, D. Li, S. Zhao, K. Yang, X. Li, H. Qiao, and J. Liu, “Diode-pumped passively Q-switched Nd:GGG laser with a Bi-doped GaAs semiconductor saturable absorber,” Opt. Commun. 332, 292–295 (2014).
    [Crossref]
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    [Crossref] [PubMed]

2015 (2)

M. Jia, X. Chen, H. Xu, W. Han, H. Yi, Y. Wan, and J. Liu, “Passively Q-switched operation of an Yb:CNGG disordered garnet laser with a GaAs crystal plate as the saturable absorber,” Laser Phys. 25(3), 035002 (2015).
[Crossref]

X. Chen, W. Han, H. Xu, M. Jia, H. Yu, H. Zhang, and J. Liu, “High-power passively Q-switched Yb:YCa4O(BO3)3 laser with a GaAs crystal plate as saturable absorber,” Appl. Opt. 54(11), 3225–3230 (2015).
[Crossref] [PubMed]

2014 (2)

H. Chu, S. Zhao, K. Yang, Y. Li, D. Li, G. Li, J. Zhao, W. Qiao, X. Xu, J. Di, L. Zheng, and J. Xu, “Experimental and theoretical study of passively Q-switched Yb:YAG laser with GaAs saturable absorber near 1050 nm,” Opt. Laser Technol. 56, 398–403 (2014).
[Crossref]

W. Cong, D. Li, S. Zhao, K. Yang, X. Li, H. Qiao, and J. Liu, “Diode-pumped passively Q-switched Nd:GGG laser with a Bi-doped GaAs semiconductor saturable absorber,” Opt. Commun. 332, 292–295 (2014).
[Crossref]

2013 (1)

2010 (1)

2008 (1)

2007 (1)

J. E. Hellström, V. Pasiskevicius, F. Laurell, B. Denker, B. Galagan, L. Ivleva, S. Sverchkov, I. Voronina, and V. Horvath, “Laser performance of Yb:GdCa4O(BO3)3 compared to Yb:KGd(WO4)2 under diode-bar pumping,” Laser Phys. 17(10), 1204–1208 (2007).
[Crossref]

2005 (1)

S. Zhao, L. Chen, H. Zhao, G. Li, L. Zhang, and K. Yang, “Laser-diode-pumped passively Q-switched Nd3+:NaY(WO4)2 laser with GaAs saturable absorber,” Opt. Laser Technol. 37(3), 187–191 (2005).
[Crossref]

2004 (2)

Y. He, X. Hou, L. Qin, Y. Sun, Y. Li, H. Qi, and L. Pan, “Laser-diode pumped passively Q-switched Nd:YxGd1−xVO4 laser with a GaAs saturable absorber,” Opt. Commun. 234(1-6), 305–308 (2004).
[Crossref]

J. Kong, D. Tang, J. Lu, K. Ueda, H. Yagi, and T. Yanagitani, “Passively Q-switched Yb:Y2O3)ceramic laser with a GaAs output coupler,” Opt. Express 12(15), 3560–3566 (2004).
[Crossref] [PubMed]

2002 (1)

D. Shen, D. Tang, and J. Kong, “Passively Q-switched Yb:YAG laser with a GaAs output coupler,” Opt. Commun. 211(1-6), 271–275 (2002).
[Crossref]

2001 (3)

H. Zhang, X. Meng, P. Wang, L. Zhu, X. Liu, X. Liu, Y. Yang, R. Wang, J. Dawes, J. Piper, S. Zhang, and L. Sun, “Growth of Yb-doped GdCa4O(BO3)3 crystals and their spectra and laser properties,” J. Cryst. Growth 222(1-2), 309–314 (2001).
[Crossref]

S. Chénais, F. Druon, F. Balembois, G. Lucas-Leclin, P. Georges, A. Brun, M. Zavelani-Rossi, F. Augé, J. P. Chambaret, G. Aka, and D. Vivien, “Multiwatt, tunable, diode-pumped CW Yb:GdCOB laser,” Appl. Phys. B 72(4), 389–393 (2001).
[Crossref]

J. Gu, F. Zhou, K. T. Wan, T. K. Lim, S. C. Tam, Y. L. Lam, D. Xu, and Z. Cheng, “Q-switching of a diode-pumped Nd:YVO4 laser with GaAs nonlinear output coupler,” Opt. Lasers Eng. 35(5), 299–307 (2001).
[Crossref]

2000 (2)

1999 (3)

1996 (1)

Aka, G.

Aron, A.

Augé, F.

Balembois, F.

Brun, A.

Chambaret, J. P.

S. Chénais, F. Druon, F. Balembois, G. Lucas-Leclin, P. Georges, A. Brun, M. Zavelani-Rossi, F. Augé, J. P. Chambaret, G. Aka, and D. Vivien, “Multiwatt, tunable, diode-pumped CW Yb:GdCOB laser,” Appl. Phys. B 72(4), 389–393 (2001).
[Crossref]

Chen, L.

S. Zhao, L. Chen, H. Zhao, G. Li, L. Zhang, and K. Yang, “Laser-diode-pumped passively Q-switched Nd3+:NaY(WO4)2 laser with GaAs saturable absorber,” Opt. Laser Technol. 37(3), 187–191 (2005).
[Crossref]

Chen, X.

M. Jia, X. Chen, H. Xu, W. Han, H. Yi, Y. Wan, and J. Liu, “Passively Q-switched operation of an Yb:CNGG disordered garnet laser with a GaAs crystal plate as the saturable absorber,” Laser Phys. 25(3), 035002 (2015).
[Crossref]

X. Chen, W. Han, H. Xu, M. Jia, H. Yu, H. Zhang, and J. Liu, “High-power passively Q-switched Yb:YCa4O(BO3)3 laser with a GaAs crystal plate as saturable absorber,” Appl. Opt. 54(11), 3225–3230 (2015).
[Crossref] [PubMed]

Chénais, S.

S. Chénais, F. Druon, F. Balembois, G. Lucas-Leclin, P. Georges, A. Brun, M. Zavelani-Rossi, F. Augé, J. P. Chambaret, G. Aka, and D. Vivien, “Multiwatt, tunable, diode-pumped CW Yb:GdCOB laser,” Appl. Phys. B 72(4), 389–393 (2001).
[Crossref]

Cheng, Z.

J. Gu, F. Zhou, K. T. Wan, T. K. Lim, S. C. Tam, Y. L. Lam, D. Xu, and Z. Cheng, “Q-switching of a diode-pumped Nd:YVO4 laser with GaAs nonlinear output coupler,” Opt. Lasers Eng. 35(5), 299–307 (2001).
[Crossref]

Chu, H.

H. Chu, S. Zhao, K. Yang, Y. Li, D. Li, G. Li, J. Zhao, W. Qiao, X. Xu, J. Di, L. Zheng, and J. Xu, “Experimental and theoretical study of passively Q-switched Yb:YAG laser with GaAs saturable absorber near 1050 nm,” Opt. Laser Technol. 56, 398–403 (2014).
[Crossref]

Cong, W.

W. Cong, D. Li, S. Zhao, K. Yang, X. Li, H. Qiao, and J. Liu, “Diode-pumped passively Q-switched Nd:GGG laser with a Bi-doped GaAs semiconductor saturable absorber,” Opt. Commun. 332, 292–295 (2014).
[Crossref]

Coujaud, A.

Dai, Q.

Dardenne, K.

Dawes, J.

H. Zhang, X. Meng, P. Wang, L. Zhu, X. Liu, X. Liu, Y. Yang, R. Wang, J. Dawes, J. Piper, S. Zhang, and L. Sun, “Growth of Yb-doped GdCa4O(BO3)3 crystals and their spectra and laser properties,” J. Cryst. Growth 222(1-2), 309–314 (2001).
[Crossref]

Denker, B.

J. E. Hellström, V. Pasiskevicius, F. Laurell, B. Denker, B. Galagan, L. Ivleva, S. Sverchkov, I. Voronina, and V. Horvath, “Laser performance of Yb:GdCa4O(BO3)3 compared to Yb:KGd(WO4)2 under diode-bar pumping,” Laser Phys. 17(10), 1204–1208 (2007).
[Crossref]

Di, J.

H. Chu, S. Zhao, K. Yang, Y. Li, D. Li, G. Li, J. Zhao, W. Qiao, X. Xu, J. Di, L. Zheng, and J. Xu, “Experimental and theoretical study of passively Q-switched Yb:YAG laser with GaAs saturable absorber near 1050 nm,” Opt. Laser Technol. 56, 398–403 (2014).
[Crossref]

Druon, F.

Fedosejevs, R.

Gaeta, A. L.

Galagan, B.

J. E. Hellström, V. Pasiskevicius, F. Laurell, B. Denker, B. Galagan, L. Ivleva, S. Sverchkov, I. Voronina, and V. Horvath, “Laser performance of Yb:GdCa4O(BO3)3 compared to Yb:KGd(WO4)2 under diode-bar pumping,” Laser Phys. 17(10), 1204–1208 (2007).
[Crossref]

Georges, P.

Gu, J.

J. Gu, F. Zhou, K. T. Wan, T. K. Lim, S. C. Tam, Y. L. Lam, D. Xu, and Z. Cheng, “Q-switching of a diode-pumped Nd:YVO4 laser with GaAs nonlinear output coupler,” Opt. Lasers Eng. 35(5), 299–307 (2001).
[Crossref]

J. Gu, F. Zhou, W. Xie, S. C. Tam, and Y. L. Lam, “Passive Q-switching of a diode-pumped Nd:YAG laser with a GaAs output coupler,” Opt. Commun. 165(4-6), 245–249 (1999).
[Crossref]

Han, W.

He, Y.

Y. He, X. Hou, L. Qin, Y. Sun, Y. Li, H. Qi, and L. Pan, “Laser-diode pumped passively Q-switched Nd:YxGd1−xVO4 laser with a GaAs saturable absorber,” Opt. Commun. 234(1-6), 305–308 (2004).
[Crossref]

Hellström, J. E.

J. E. Hellström, V. Pasiskevicius, F. Laurell, B. Denker, B. Galagan, L. Ivleva, S. Sverchkov, I. Voronina, and V. Horvath, “Laser performance of Yb:GdCa4O(BO3)3 compared to Yb:KGd(WO4)2 under diode-bar pumping,” Laser Phys. 17(10), 1204–1208 (2007).
[Crossref]

Hönninger, C.

Horvath, V.

J. E. Hellström, V. Pasiskevicius, F. Laurell, B. Denker, B. Galagan, L. Ivleva, S. Sverchkov, I. Voronina, and V. Horvath, “Laser performance of Yb:GdCa4O(BO3)3 compared to Yb:KGd(WO4)2 under diode-bar pumping,” Laser Phys. 17(10), 1204–1208 (2007).
[Crossref]

Hou, X.

Y. He, X. Hou, L. Qin, Y. Sun, Y. Li, H. Qi, and L. Pan, “Laser-diode pumped passively Q-switched Nd:YxGd1−xVO4 laser with a GaAs saturable absorber,” Opt. Commun. 234(1-6), 305–308 (2004).
[Crossref]

Ivleva, L.

J. E. Hellström, V. Pasiskevicius, F. Laurell, B. Denker, B. Galagan, L. Ivleva, S. Sverchkov, I. Voronina, and V. Horvath, “Laser performance of Yb:GdCa4O(BO3)3 compared to Yb:KGd(WO4)2 under diode-bar pumping,” Laser Phys. 17(10), 1204–1208 (2007).
[Crossref]

Jia, M.

M. Jia, X. Chen, H. Xu, W. Han, H. Yi, Y. Wan, and J. Liu, “Passively Q-switched operation of an Yb:CNGG disordered garnet laser with a GaAs crystal plate as the saturable absorber,” Laser Phys. 25(3), 035002 (2015).
[Crossref]

X. Chen, W. Han, H. Xu, M. Jia, H. Yu, H. Zhang, and J. Liu, “High-power passively Q-switched Yb:YCa4O(BO3)3 laser with a GaAs crystal plate as saturable absorber,” Appl. Opt. 54(11), 3225–3230 (2015).
[Crossref] [PubMed]

Kahn-Harari, A.

Kajava, T. T.

Kong, J.

J. Kong, D. Tang, J. Lu, K. Ueda, H. Yagi, and T. Yanagitani, “Passively Q-switched Yb:Y2O3)ceramic laser with a GaAs output coupler,” Opt. Express 12(15), 3560–3566 (2004).
[Crossref] [PubMed]

D. Shen, D. Tang, and J. Kong, “Passively Q-switched Yb:YAG laser with a GaAs output coupler,” Opt. Commun. 211(1-6), 271–275 (2002).
[Crossref]

Lam, Y. L.

J. Gu, F. Zhou, K. T. Wan, T. K. Lim, S. C. Tam, Y. L. Lam, D. Xu, and Z. Cheng, “Q-switching of a diode-pumped Nd:YVO4 laser with GaAs nonlinear output coupler,” Opt. Lasers Eng. 35(5), 299–307 (2001).
[Crossref]

J. Gu, F. Zhou, W. Xie, S. C. Tam, and Y. L. Lam, “Passive Q-switching of a diode-pumped Nd:YAG laser with a GaAs output coupler,” Opt. Commun. 165(4-6), 245–249 (1999).
[Crossref]

Lan, R.

Laurell, F.

J. E. Hellström, V. Pasiskevicius, F. Laurell, B. Denker, B. Galagan, L. Ivleva, S. Sverchkov, I. Voronina, and V. Horvath, “Laser performance of Yb:GdCa4O(BO3)3 compared to Yb:KGd(WO4)2 under diode-bar pumping,” Laser Phys. 17(10), 1204–1208 (2007).
[Crossref]

Li, D.

W. Cong, D. Li, S. Zhao, K. Yang, X. Li, H. Qiao, and J. Liu, “Diode-pumped passively Q-switched Nd:GGG laser with a Bi-doped GaAs semiconductor saturable absorber,” Opt. Commun. 332, 292–295 (2014).
[Crossref]

H. Chu, S. Zhao, K. Yang, Y. Li, D. Li, G. Li, J. Zhao, W. Qiao, X. Xu, J. Di, L. Zheng, and J. Xu, “Experimental and theoretical study of passively Q-switched Yb:YAG laser with GaAs saturable absorber near 1050 nm,” Opt. Laser Technol. 56, 398–403 (2014).
[Crossref]

Li, G.

H. Chu, S. Zhao, K. Yang, Y. Li, D. Li, G. Li, J. Zhao, W. Qiao, X. Xu, J. Di, L. Zheng, and J. Xu, “Experimental and theoretical study of passively Q-switched Yb:YAG laser with GaAs saturable absorber near 1050 nm,” Opt. Laser Technol. 56, 398–403 (2014).
[Crossref]

S. Zhao, L. Chen, H. Zhao, G. Li, L. Zhang, and K. Yang, “Laser-diode-pumped passively Q-switched Nd3+:NaY(WO4)2 laser with GaAs saturable absorber,” Opt. Laser Technol. 37(3), 187–191 (2005).
[Crossref]

Li, X.

W. Cong, D. Li, S. Zhao, K. Yang, X. Li, H. Qiao, and J. Liu, “Diode-pumped passively Q-switched Nd:GGG laser with a Bi-doped GaAs semiconductor saturable absorber,” Opt. Commun. 332, 292–295 (2014).
[Crossref]

Li, Y.

H. Chu, S. Zhao, K. Yang, Y. Li, D. Li, G. Li, J. Zhao, W. Qiao, X. Xu, J. Di, L. Zheng, and J. Xu, “Experimental and theoretical study of passively Q-switched Yb:YAG laser with GaAs saturable absorber near 1050 nm,” Opt. Laser Technol. 56, 398–403 (2014).
[Crossref]

Y. He, X. Hou, L. Qin, Y. Sun, Y. Li, H. Qi, and L. Pan, “Laser-diode pumped passively Q-switched Nd:YxGd1−xVO4 laser with a GaAs saturable absorber,” Opt. Commun. 234(1-6), 305–308 (2004).
[Crossref]

Lim, T. K.

J. Gu, F. Zhou, K. T. Wan, T. K. Lim, S. C. Tam, Y. L. Lam, D. Xu, and Z. Cheng, “Q-switching of a diode-pumped Nd:YVO4 laser with GaAs nonlinear output coupler,” Opt. Lasers Eng. 35(5), 299–307 (2001).
[Crossref]

Liu, J.

M. Jia, X. Chen, H. Xu, W. Han, H. Yi, Y. Wan, and J. Liu, “Passively Q-switched operation of an Yb:CNGG disordered garnet laser with a GaAs crystal plate as the saturable absorber,” Laser Phys. 25(3), 035002 (2015).
[Crossref]

X. Chen, W. Han, H. Xu, M. Jia, H. Yu, H. Zhang, and J. Liu, “High-power passively Q-switched Yb:YCa4O(BO3)3 laser with a GaAs crystal plate as saturable absorber,” Appl. Opt. 54(11), 3225–3230 (2015).
[Crossref] [PubMed]

W. Cong, D. Li, S. Zhao, K. Yang, X. Li, H. Qiao, and J. Liu, “Diode-pumped passively Q-switched Nd:GGG laser with a Bi-doped GaAs semiconductor saturable absorber,” Opt. Commun. 332, 292–295 (2014).
[Crossref]

J. Liu, Y. Wan, Q. Dai, X. Tian, W. Han, and H. Zhang, “Efficient high-energy passively Q-switched Yb:GdCa4O(BO3)3 laser,” Appl. Opt. 52(12), 2676–2681 (2013).
[Crossref] [PubMed]

J. Liu, H. Yang, H. Zhang, J. Wang, and V. Petrov, “Anisotropy in laser performance of Yb:GdCa4O(BO3)3 crystal,” Appl. Opt. 47(29), 5436–5441 (2008).
[PubMed]

Liu, X.

H. Zhang, X. Meng, P. Wang, L. Zhu, X. Liu, X. Liu, Y. Yang, R. Wang, J. Dawes, J. Piper, S. Zhang, and L. Sun, “Growth of Yb-doped GdCa4O(BO3)3 crystals and their spectra and laser properties,” J. Cryst. Growth 222(1-2), 309–314 (2001).
[Crossref]

H. Zhang, X. Meng, P. Wang, L. Zhu, X. Liu, X. Liu, Y. Yang, R. Wang, J. Dawes, J. Piper, S. Zhang, and L. Sun, “Growth of Yb-doped GdCa4O(BO3)3 crystals and their spectra and laser properties,” J. Cryst. Growth 222(1-2), 309–314 (2001).
[Crossref]

Lu, J.

Lucas-Leclin, G.

S. Chénais, F. Druon, F. Balembois, G. Lucas-Leclin, P. Georges, A. Brun, M. Zavelani-Rossi, F. Augé, J. P. Chambaret, G. Aka, and D. Vivien, “Multiwatt, tunable, diode-pumped CW Yb:GdCOB laser,” Appl. Phys. B 72(4), 389–393 (2001).
[Crossref]

Meng, X.

H. Zhang, X. Meng, P. Wang, L. Zhu, X. Liu, X. Liu, Y. Yang, R. Wang, J. Dawes, J. Piper, S. Zhang, and L. Sun, “Growth of Yb-doped GdCa4O(BO3)3 crystals and their spectra and laser properties,” J. Cryst. Growth 222(1-2), 309–314 (2001).
[Crossref]

Mougel, F.

Pan, L.

R. Lan, L. Pan, I. Utkin, Q. Ren, H. Zhang, Z. Wang, and R. Fedosejevs, “Passively Q-switched Yb3+:NaY(WO4)2 laser with GaAs saturable absorber,” Opt. Express 18(5), 4000–4005 (2010).
[Crossref] [PubMed]

Y. He, X. Hou, L. Qin, Y. Sun, Y. Li, H. Qi, and L. Pan, “Laser-diode pumped passively Q-switched Nd:YxGd1−xVO4 laser with a GaAs saturable absorber,” Opt. Commun. 234(1-6), 305–308 (2004).
[Crossref]

Pasiskevicius, V.

J. E. Hellström, V. Pasiskevicius, F. Laurell, B. Denker, B. Galagan, L. Ivleva, S. Sverchkov, I. Voronina, and V. Horvath, “Laser performance of Yb:GdCa4O(BO3)3 compared to Yb:KGd(WO4)2 under diode-bar pumping,” Laser Phys. 17(10), 1204–1208 (2007).
[Crossref]

Petrov, V.

Piper, J.

H. Zhang, X. Meng, P. Wang, L. Zhu, X. Liu, X. Liu, Y. Yang, R. Wang, J. Dawes, J. Piper, S. Zhang, and L. Sun, “Growth of Yb-doped GdCa4O(BO3)3 crystals and their spectra and laser properties,” J. Cryst. Growth 222(1-2), 309–314 (2001).
[Crossref]

Qi, H.

Y. He, X. Hou, L. Qin, Y. Sun, Y. Li, H. Qi, and L. Pan, “Laser-diode pumped passively Q-switched Nd:YxGd1−xVO4 laser with a GaAs saturable absorber,” Opt. Commun. 234(1-6), 305–308 (2004).
[Crossref]

Qiao, H.

W. Cong, D. Li, S. Zhao, K. Yang, X. Li, H. Qiao, and J. Liu, “Diode-pumped passively Q-switched Nd:GGG laser with a Bi-doped GaAs semiconductor saturable absorber,” Opt. Commun. 332, 292–295 (2014).
[Crossref]

Qiao, W.

H. Chu, S. Zhao, K. Yang, Y. Li, D. Li, G. Li, J. Zhao, W. Qiao, X. Xu, J. Di, L. Zheng, and J. Xu, “Experimental and theoretical study of passively Q-switched Yb:YAG laser with GaAs saturable absorber near 1050 nm,” Opt. Laser Technol. 56, 398–403 (2014).
[Crossref]

Qin, L.

Y. He, X. Hou, L. Qin, Y. Sun, Y. Li, H. Qi, and L. Pan, “Laser-diode pumped passively Q-switched Nd:YxGd1−xVO4 laser with a GaAs saturable absorber,” Opt. Commun. 234(1-6), 305–308 (2004).
[Crossref]

Ren, Q.

Salin, F.

Shen, D.

D. Shen, D. Tang, and J. Kong, “Passively Q-switched Yb:YAG laser with a GaAs output coupler,” Opt. Commun. 211(1-6), 271–275 (2002).
[Crossref]

Sun, L.

H. Zhang, X. Meng, P. Wang, L. Zhu, X. Liu, X. Liu, Y. Yang, R. Wang, J. Dawes, J. Piper, S. Zhang, and L. Sun, “Growth of Yb-doped GdCa4O(BO3)3 crystals and their spectra and laser properties,” J. Cryst. Growth 222(1-2), 309–314 (2001).
[Crossref]

Sun, Y.

Y. He, X. Hou, L. Qin, Y. Sun, Y. Li, H. Qi, and L. Pan, “Laser-diode pumped passively Q-switched Nd:YxGd1−xVO4 laser with a GaAs saturable absorber,” Opt. Commun. 234(1-6), 305–308 (2004).
[Crossref]

Sverchkov, S.

J. E. Hellström, V. Pasiskevicius, F. Laurell, B. Denker, B. Galagan, L. Ivleva, S. Sverchkov, I. Voronina, and V. Horvath, “Laser performance of Yb:GdCa4O(BO3)3 compared to Yb:KGd(WO4)2 under diode-bar pumping,” Laser Phys. 17(10), 1204–1208 (2007).
[Crossref]

Tam, S. C.

J. Gu, F. Zhou, K. T. Wan, T. K. Lim, S. C. Tam, Y. L. Lam, D. Xu, and Z. Cheng, “Q-switching of a diode-pumped Nd:YVO4 laser with GaAs nonlinear output coupler,” Opt. Lasers Eng. 35(5), 299–307 (2001).
[Crossref]

J. Gu, F. Zhou, W. Xie, S. C. Tam, and Y. L. Lam, “Passive Q-switching of a diode-pumped Nd:YAG laser with a GaAs output coupler,” Opt. Commun. 165(4-6), 245–249 (1999).
[Crossref]

Tang, D.

J. Kong, D. Tang, J. Lu, K. Ueda, H. Yagi, and T. Yanagitani, “Passively Q-switched Yb:Y2O3)ceramic laser with a GaAs output coupler,” Opt. Express 12(15), 3560–3566 (2004).
[Crossref] [PubMed]

D. Shen, D. Tang, and J. Kong, “Passively Q-switched Yb:YAG laser with a GaAs output coupler,” Opt. Commun. 211(1-6), 271–275 (2002).
[Crossref]

Tian, X.

Ueda, K.

Utkin, I.

Vivien, D.

Voronina, I.

J. E. Hellström, V. Pasiskevicius, F. Laurell, B. Denker, B. Galagan, L. Ivleva, S. Sverchkov, I. Voronina, and V. Horvath, “Laser performance of Yb:GdCa4O(BO3)3 compared to Yb:KGd(WO4)2 under diode-bar pumping,” Laser Phys. 17(10), 1204–1208 (2007).
[Crossref]

Wan, K. T.

J. Gu, F. Zhou, K. T. Wan, T. K. Lim, S. C. Tam, Y. L. Lam, D. Xu, and Z. Cheng, “Q-switching of a diode-pumped Nd:YVO4 laser with GaAs nonlinear output coupler,” Opt. Lasers Eng. 35(5), 299–307 (2001).
[Crossref]

Wan, Y.

M. Jia, X. Chen, H. Xu, W. Han, H. Yi, Y. Wan, and J. Liu, “Passively Q-switched operation of an Yb:CNGG disordered garnet laser with a GaAs crystal plate as the saturable absorber,” Laser Phys. 25(3), 035002 (2015).
[Crossref]

J. Liu, Y. Wan, Q. Dai, X. Tian, W. Han, and H. Zhang, “Efficient high-energy passively Q-switched Yb:GdCa4O(BO3)3 laser,” Appl. Opt. 52(12), 2676–2681 (2013).
[Crossref] [PubMed]

Wang, J.

Wang, P.

H. Zhang, X. Meng, P. Wang, L. Zhu, X. Liu, X. Liu, Y. Yang, R. Wang, J. Dawes, J. Piper, S. Zhang, and L. Sun, “Growth of Yb-doped GdCa4O(BO3)3 crystals and their spectra and laser properties,” J. Cryst. Growth 222(1-2), 309–314 (2001).
[Crossref]

Wang, R.

H. Zhang, X. Meng, P. Wang, L. Zhu, X. Liu, X. Liu, Y. Yang, R. Wang, J. Dawes, J. Piper, S. Zhang, and L. Sun, “Growth of Yb-doped GdCa4O(BO3)3 crystals and their spectra and laser properties,” J. Cryst. Growth 222(1-2), 309–314 (2001).
[Crossref]

Wang, Z.

Xie, W.

J. Gu, F. Zhou, W. Xie, S. C. Tam, and Y. L. Lam, “Passive Q-switching of a diode-pumped Nd:YAG laser with a GaAs output coupler,” Opt. Commun. 165(4-6), 245–249 (1999).
[Crossref]

Xu, D.

J. Gu, F. Zhou, K. T. Wan, T. K. Lim, S. C. Tam, Y. L. Lam, D. Xu, and Z. Cheng, “Q-switching of a diode-pumped Nd:YVO4 laser with GaAs nonlinear output coupler,” Opt. Lasers Eng. 35(5), 299–307 (2001).
[Crossref]

Xu, H.

M. Jia, X. Chen, H. Xu, W. Han, H. Yi, Y. Wan, and J. Liu, “Passively Q-switched operation of an Yb:CNGG disordered garnet laser with a GaAs crystal plate as the saturable absorber,” Laser Phys. 25(3), 035002 (2015).
[Crossref]

X. Chen, W. Han, H. Xu, M. Jia, H. Yu, H. Zhang, and J. Liu, “High-power passively Q-switched Yb:YCa4O(BO3)3 laser with a GaAs crystal plate as saturable absorber,” Appl. Opt. 54(11), 3225–3230 (2015).
[Crossref] [PubMed]

Xu, J.

H. Chu, S. Zhao, K. Yang, Y. Li, D. Li, G. Li, J. Zhao, W. Qiao, X. Xu, J. Di, L. Zheng, and J. Xu, “Experimental and theoretical study of passively Q-switched Yb:YAG laser with GaAs saturable absorber near 1050 nm,” Opt. Laser Technol. 56, 398–403 (2014).
[Crossref]

Xu, X.

H. Chu, S. Zhao, K. Yang, Y. Li, D. Li, G. Li, J. Zhao, W. Qiao, X. Xu, J. Di, L. Zheng, and J. Xu, “Experimental and theoretical study of passively Q-switched Yb:YAG laser with GaAs saturable absorber near 1050 nm,” Opt. Laser Technol. 56, 398–403 (2014).
[Crossref]

Yagi, H.

Yanagitani, T.

Yang, H.

Yang, K.

W. Cong, D. Li, S. Zhao, K. Yang, X. Li, H. Qiao, and J. Liu, “Diode-pumped passively Q-switched Nd:GGG laser with a Bi-doped GaAs semiconductor saturable absorber,” Opt. Commun. 332, 292–295 (2014).
[Crossref]

H. Chu, S. Zhao, K. Yang, Y. Li, D. Li, G. Li, J. Zhao, W. Qiao, X. Xu, J. Di, L. Zheng, and J. Xu, “Experimental and theoretical study of passively Q-switched Yb:YAG laser with GaAs saturable absorber near 1050 nm,” Opt. Laser Technol. 56, 398–403 (2014).
[Crossref]

S. Zhao, L. Chen, H. Zhao, G. Li, L. Zhang, and K. Yang, “Laser-diode-pumped passively Q-switched Nd3+:NaY(WO4)2 laser with GaAs saturable absorber,” Opt. Laser Technol. 37(3), 187–191 (2005).
[Crossref]

Yang, Y.

H. Zhang, X. Meng, P. Wang, L. Zhu, X. Liu, X. Liu, Y. Yang, R. Wang, J. Dawes, J. Piper, S. Zhang, and L. Sun, “Growth of Yb-doped GdCa4O(BO3)3 crystals and their spectra and laser properties,” J. Cryst. Growth 222(1-2), 309–314 (2001).
[Crossref]

Yi, H.

M. Jia, X. Chen, H. Xu, W. Han, H. Yi, Y. Wan, and J. Liu, “Passively Q-switched operation of an Yb:CNGG disordered garnet laser with a GaAs crystal plate as the saturable absorber,” Laser Phys. 25(3), 035002 (2015).
[Crossref]

Yu, H.

Zavelani-Rossi, M.

S. Chénais, F. Druon, F. Balembois, G. Lucas-Leclin, P. Georges, A. Brun, M. Zavelani-Rossi, F. Augé, J. P. Chambaret, G. Aka, and D. Vivien, “Multiwatt, tunable, diode-pumped CW Yb:GdCOB laser,” Appl. Phys. B 72(4), 389–393 (2001).
[Crossref]

Zhang, H.

Zhang, L.

S. Zhao, L. Chen, H. Zhao, G. Li, L. Zhang, and K. Yang, “Laser-diode-pumped passively Q-switched Nd3+:NaY(WO4)2 laser with GaAs saturable absorber,” Opt. Laser Technol. 37(3), 187–191 (2005).
[Crossref]

Zhang, S.

H. Zhang, X. Meng, P. Wang, L. Zhu, X. Liu, X. Liu, Y. Yang, R. Wang, J. Dawes, J. Piper, S. Zhang, and L. Sun, “Growth of Yb-doped GdCa4O(BO3)3 crystals and their spectra and laser properties,” J. Cryst. Growth 222(1-2), 309–314 (2001).
[Crossref]

Zhao, H.

S. Zhao, L. Chen, H. Zhao, G. Li, L. Zhang, and K. Yang, “Laser-diode-pumped passively Q-switched Nd3+:NaY(WO4)2 laser with GaAs saturable absorber,” Opt. Laser Technol. 37(3), 187–191 (2005).
[Crossref]

Zhao, J.

H. Chu, S. Zhao, K. Yang, Y. Li, D. Li, G. Li, J. Zhao, W. Qiao, X. Xu, J. Di, L. Zheng, and J. Xu, “Experimental and theoretical study of passively Q-switched Yb:YAG laser with GaAs saturable absorber near 1050 nm,” Opt. Laser Technol. 56, 398–403 (2014).
[Crossref]

Zhao, S.

W. Cong, D. Li, S. Zhao, K. Yang, X. Li, H. Qiao, and J. Liu, “Diode-pumped passively Q-switched Nd:GGG laser with a Bi-doped GaAs semiconductor saturable absorber,” Opt. Commun. 332, 292–295 (2014).
[Crossref]

H. Chu, S. Zhao, K. Yang, Y. Li, D. Li, G. Li, J. Zhao, W. Qiao, X. Xu, J. Di, L. Zheng, and J. Xu, “Experimental and theoretical study of passively Q-switched Yb:YAG laser with GaAs saturable absorber near 1050 nm,” Opt. Laser Technol. 56, 398–403 (2014).
[Crossref]

S. Zhao, L. Chen, H. Zhao, G. Li, L. Zhang, and K. Yang, “Laser-diode-pumped passively Q-switched Nd3+:NaY(WO4)2 laser with GaAs saturable absorber,” Opt. Laser Technol. 37(3), 187–191 (2005).
[Crossref]

Zheng, L.

H. Chu, S. Zhao, K. Yang, Y. Li, D. Li, G. Li, J. Zhao, W. Qiao, X. Xu, J. Di, L. Zheng, and J. Xu, “Experimental and theoretical study of passively Q-switched Yb:YAG laser with GaAs saturable absorber near 1050 nm,” Opt. Laser Technol. 56, 398–403 (2014).
[Crossref]

Zhou, F.

J. Gu, F. Zhou, K. T. Wan, T. K. Lim, S. C. Tam, Y. L. Lam, D. Xu, and Z. Cheng, “Q-switching of a diode-pumped Nd:YVO4 laser with GaAs nonlinear output coupler,” Opt. Lasers Eng. 35(5), 299–307 (2001).
[Crossref]

J. Gu, F. Zhou, W. Xie, S. C. Tam, and Y. L. Lam, “Passive Q-switching of a diode-pumped Nd:YAG laser with a GaAs output coupler,” Opt. Commun. 165(4-6), 245–249 (1999).
[Crossref]

Zhu, L.

H. Zhang, X. Meng, P. Wang, L. Zhu, X. Liu, X. Liu, Y. Yang, R. Wang, J. Dawes, J. Piper, S. Zhang, and L. Sun, “Growth of Yb-doped GdCa4O(BO3)3 crystals and their spectra and laser properties,” J. Cryst. Growth 222(1-2), 309–314 (2001).
[Crossref]

Appl. Opt. (4)

Appl. Phys. B (1)

S. Chénais, F. Druon, F. Balembois, G. Lucas-Leclin, P. Georges, A. Brun, M. Zavelani-Rossi, F. Augé, J. P. Chambaret, G. Aka, and D. Vivien, “Multiwatt, tunable, diode-pumped CW Yb:GdCOB laser,” Appl. Phys. B 72(4), 389–393 (2001).
[Crossref]

J. Cryst. Growth (1)

H. Zhang, X. Meng, P. Wang, L. Zhu, X. Liu, X. Liu, Y. Yang, R. Wang, J. Dawes, J. Piper, S. Zhang, and L. Sun, “Growth of Yb-doped GdCa4O(BO3)3 crystals and their spectra and laser properties,” J. Cryst. Growth 222(1-2), 309–314 (2001).
[Crossref]

J. Opt. Soc. Am. B (2)

Laser Phys. (2)

J. E. Hellström, V. Pasiskevicius, F. Laurell, B. Denker, B. Galagan, L. Ivleva, S. Sverchkov, I. Voronina, and V. Horvath, “Laser performance of Yb:GdCa4O(BO3)3 compared to Yb:KGd(WO4)2 under diode-bar pumping,” Laser Phys. 17(10), 1204–1208 (2007).
[Crossref]

M. Jia, X. Chen, H. Xu, W. Han, H. Yi, Y. Wan, and J. Liu, “Passively Q-switched operation of an Yb:CNGG disordered garnet laser with a GaAs crystal plate as the saturable absorber,” Laser Phys. 25(3), 035002 (2015).
[Crossref]

Opt. Commun. (4)

J. Gu, F. Zhou, W. Xie, S. C. Tam, and Y. L. Lam, “Passive Q-switching of a diode-pumped Nd:YAG laser with a GaAs output coupler,” Opt. Commun. 165(4-6), 245–249 (1999).
[Crossref]

Y. He, X. Hou, L. Qin, Y. Sun, Y. Li, H. Qi, and L. Pan, “Laser-diode pumped passively Q-switched Nd:YxGd1−xVO4 laser with a GaAs saturable absorber,” Opt. Commun. 234(1-6), 305–308 (2004).
[Crossref]

D. Shen, D. Tang, and J. Kong, “Passively Q-switched Yb:YAG laser with a GaAs output coupler,” Opt. Commun. 211(1-6), 271–275 (2002).
[Crossref]

W. Cong, D. Li, S. Zhao, K. Yang, X. Li, H. Qiao, and J. Liu, “Diode-pumped passively Q-switched Nd:GGG laser with a Bi-doped GaAs semiconductor saturable absorber,” Opt. Commun. 332, 292–295 (2014).
[Crossref]

Opt. Express (2)

Opt. Laser Technol. (2)

H. Chu, S. Zhao, K. Yang, Y. Li, D. Li, G. Li, J. Zhao, W. Qiao, X. Xu, J. Di, L. Zheng, and J. Xu, “Experimental and theoretical study of passively Q-switched Yb:YAG laser with GaAs saturable absorber near 1050 nm,” Opt. Laser Technol. 56, 398–403 (2014).
[Crossref]

S. Zhao, L. Chen, H. Zhao, G. Li, L. Zhang, and K. Yang, “Laser-diode-pumped passively Q-switched Nd3+:NaY(WO4)2 laser with GaAs saturable absorber,” Opt. Laser Technol. 37(3), 187–191 (2005).
[Crossref]

Opt. Lasers Eng. (1)

J. Gu, F. Zhou, K. T. Wan, T. K. Lim, S. C. Tam, Y. L. Lam, D. Xu, and Z. Cheng, “Q-switching of a diode-pumped Nd:YVO4 laser with GaAs nonlinear output coupler,” Opt. Lasers Eng. 35(5), 299–307 (2001).
[Crossref]

Opt. Lett. (2)

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Figures (7)

Fig. 1
Fig. 1 Output characteristics of the passively Q-switched Yb:GdCOB laser for three output couplings of T = 30%, 40%, and 50%.
Fig. 2
Fig. 2 Laser emission spectrum measured at an intermediate incident pump power of 12.3 W for T = 30%, 40%, and 50%.
Fig. 3
Fig. 3 Variations of pulse repetition frequency with incident pump power, measured for the cases of T = 30%, 40%, and 50%.
Fig. 4
Fig. 4 Variations of pulse energy with incident pump power for T = 30%, 40%, and 50%.
Fig. 5
Fig. 5 Variations of pulse width with incident pump power for T = 30%, 40%, and 50%.
Fig. 6
Fig. 6 Temporal profiles of the shortest pulse generated in the cases of T = 30%, 40%, and 50%.
Fig. 7
Fig. 7 Oscilloscope trace showing a laser pulse train, recorded at an incident pump power of 16.3 W in the case of T = 50%.

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