Abstract

Hybrid nanophotonic platforms based on three-dimensional integration of different photonic materials are emerging as promising ecosystems for the optoelectronic device fabrication. In order to benefit from key features of both silicon (Si) and silicon nitride (SiN) on a single chip, we have developed a wafer-scale hybrid photonic platform based on the integration of a thin crystalline Si layer on top of a thin SiN layer with an ultra-thin oxide buffer layer. A complete optical path in the hybrid platform is demonstrated by coupling light back and forth between nanophotonic devices in Si and SiN layers. Using an adiabatic tapered coupling method, a record-low interlayer coupling-loss of 0.02 dB is achieved at 1550 nm telecommunication wavelength window. We also demonstrate high-Q resonators on the hybrid material platform with intrinsic Q's as high as 3 × 106 for a 60 μm-radius microring resonator, which is (to the best of our knowledge) the highest Q observed for a micro-resonator on a hybrid Si/SiN platform.

© 2015 Optical Society of America

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2015 (3)

2014 (7)

W. S. Zaoui, A. Kunze, W. Vogel, M. Berroth, J. Butschke, F. Letzkus, and J. Burghartz, “Bridging the gap between optical fibers and silicon photonic integrated circuits,” Opt. Express 22(2), 1277–1286 (2014).
[Crossref] [PubMed]

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[Crossref] [PubMed]

M. Sodagar, R. Pourabolghasem, A. A. Eftekhar, and A. Adibi, “High-efficiency and wideband interlayer grating couplers in multilayer Si/SiO2/SiN platform for 3D integration of optical functionalities,” Opt. Express 22(14), 16767–16777 (2014).
[Crossref] [PubMed]

M. Sodagar, A. H. Hosseinnia, H. Moradinejad, A. H. Atabaki, A. A. Eftekhar, and A. Adibi, “Field-programmable optical devices based on resonance elimination,” Opt. Lett. 39(15), 4545–4548 (2014).
[Crossref] [PubMed]

D. Spencer, J. Bauters, M. Heck, and J. Bowers, “Integrated waveguide coupled Si3N4 resonators in the ultrahigh-Q regime,” Optica 1(3), 153–157 (2014).
[Crossref]

E. Timurdogan, C. M. Sorace-Agaskar, J. Sun, E. Shah Hosseini, A. Biberman, and M. R. Watts, “An ultralow power athermal silicon modulator,” Nat. Commun. 5, 4008 (2014).
[Crossref] [PubMed]

H. Moradinejad, A. Atabaki, A. Hosseinnia, A. Eftekhar, and A. Adibi, “Double-layer crystalline silicon on insulator material platform for integrated photonic applications,” IEEE Photonics J. 6(6), 2500208 (2014).
[Crossref]

2013 (2)

2011 (3)

2010 (3)

M. Casalino, G. Coppola, M. Iodice, I. Rendina, and L. Sirleto, “Near-infrared sub-bandgap all-silicon photodetectors: state of the art and perspectives,” Sensors (Basel) 10(12), 10571–10600 (2010).
[Crossref] [PubMed]

G. Roelkens, L. Liu, D. Liang, R. Jones, A. Fang, B. Koch, and J. Bowers, “III‐V/silicon photonics for on‐chip and intra‐chip optical interconnects,” Laser Photonics Rev. 4(6), 751–779 (2010).
[Crossref]

D. Vermeulen, S. Selvaraja, P. Verheyen, G. Lepage, W. Bogaerts, P. Absil, D. Van Thourhout, and G. Roelkens, “High-efficiency fiber-to-chip grating couplers realized using an advanced CMOS-compatible silicon-on-insulator platform,” Opt. Express 18(17), 18278–18283 (2010).
[Crossref] [PubMed]

2009 (4)

2008 (3)

2007 (1)

F. Xia, L. Sekaric, and Y. Vlasov, “Ultracompact optical buffers on a silicon chip,” Nat. Photonics 1(1), 65–71 (2007).
[Crossref]

2006 (2)

T. Maruyama, T. Okumura, S. Sakamoto, K. Miura, Y. Nishimoto, and S. Arai, “GaInAsP/InP membrane BH-DFB lasers directly bonded on SOI substrate,” Opt. Express 14(18), 8184–8188 (2006).
[Crossref] [PubMed]

L. Schares, J. A. Kash, F. E. Doany, C. L. Schow, C. Schuster, D. M. Kuchta, P. K. Pepeljugoski, J. M. Trewhella, C. W. Baks, R. A. John, L. Shan, Y. H. Kwark, R. A. Budd, P. Chiniwalla, F. R. Libsch, J. Rosner, C. K. Tsang, C. S. Patel, J. D. Schaub, R. Dangel, F. Horst, B. J. Offrein, D. Kucharski, D. Guckenberger, S. Hegde, H. Nyikal, C.-K. Lin, A. Tandon, G. R. Trott, M. Nystrom, D. P. Bour, M. R. T. Tan, and D. W. Dolfi, “Terabus: terabit/second-class card-level optical interconnect technologies,” IEEE J. Sel. Top. Quantum Electron. 12(5), 1032–1044 (2006).
[Crossref]

2005 (1)

X. Zhang and J.-P. Raskin, “Low-temperature wafer bonding: a study of void formation and influence on bonding strength,” J. Microelectromech. Syst. 14(2), 368–382 (2005).
[Crossref]

2004 (1)

Y. Bertholet, F. Iker, J.-P. Raskin, and T. Pardoen, “Steady-state measurement of wafer bonding cracking resistance,” Sens. Actuators A Phys. 110(1-3), 157–163 (2004).
[Crossref]

2000 (1)

Y. Cheng, L. Lin, and K. Najafi, “Localized silicon fusion and eutectic bonding for MEMS fabrication and packaging,” J. Microelectromech. Syst. 9(1), 3–8 (2000).
[Crossref]

1991 (1)

B. L. Weiss, G. T. Reed, S. K. Toh, R. A. Soref, and F. Namavar, “Optical waveguides in SIMOX structures,” IEEE Photonics Technol. Lett. 3(1), 19–21 (1991).
[Crossref]

1987 (1)

R. A. Soref and B. R. Bennett, “Electro-optical effects in silicon,” IEEE J. Quantum Electron. 23(1), 123–129 (1987).
[Crossref]

Absil, P.

Adibi, A.

Arai, S.

Asghari, M.

Atabaki, A.

H. Moradinejad, A. Atabaki, A. Hosseinnia, A. Eftekhar, and A. Adibi, “Double-layer crystalline silicon on insulator material platform for integrated photonic applications,” IEEE Photonics J. 6(6), 2500208 (2014).
[Crossref]

Atabaki, A. H.

Baks, C. W.

L. Schares, J. A. Kash, F. E. Doany, C. L. Schow, C. Schuster, D. M. Kuchta, P. K. Pepeljugoski, J. M. Trewhella, C. W. Baks, R. A. John, L. Shan, Y. H. Kwark, R. A. Budd, P. Chiniwalla, F. R. Libsch, J. Rosner, C. K. Tsang, C. S. Patel, J. D. Schaub, R. Dangel, F. Horst, B. J. Offrein, D. Kucharski, D. Guckenberger, S. Hegde, H. Nyikal, C.-K. Lin, A. Tandon, G. R. Trott, M. Nystrom, D. P. Bour, M. R. T. Tan, and D. W. Dolfi, “Terabus: terabit/second-class card-level optical interconnect technologies,” IEEE J. Sel. Top. Quantum Electron. 12(5), 1032–1044 (2006).
[Crossref]

Bauters, J.

Bauters, J. F.

Beals, M.

Bennett, B. R.

R. A. Soref and B. R. Bennett, “Electro-optical effects in silicon,” IEEE J. Quantum Electron. 23(1), 123–129 (1987).
[Crossref]

Berroth, M.

Bertholet, Y.

Y. Bertholet, F. Iker, J.-P. Raskin, and T. Pardoen, “Steady-state measurement of wafer bonding cracking resistance,” Sens. Actuators A Phys. 110(1-3), 157–163 (2004).
[Crossref]

Biberman, A.

E. Timurdogan, C. M. Sorace-Agaskar, J. Sun, E. Shah Hosseini, A. Biberman, and M. R. Watts, “An ultralow power athermal silicon modulator,” Nat. Commun. 5, 4008 (2014).
[Crossref] [PubMed]

Bogaerts, W.

Bour, D. P.

L. Schares, J. A. Kash, F. E. Doany, C. L. Schow, C. Schuster, D. M. Kuchta, P. K. Pepeljugoski, J. M. Trewhella, C. W. Baks, R. A. John, L. Shan, Y. H. Kwark, R. A. Budd, P. Chiniwalla, F. R. Libsch, J. Rosner, C. K. Tsang, C. S. Patel, J. D. Schaub, R. Dangel, F. Horst, B. J. Offrein, D. Kucharski, D. Guckenberger, S. Hegde, H. Nyikal, C.-K. Lin, A. Tandon, G. R. Trott, M. Nystrom, D. P. Bour, M. R. T. Tan, and D. W. Dolfi, “Terabus: terabit/second-class card-level optical interconnect technologies,” IEEE J. Sel. Top. Quantum Electron. 12(5), 1032–1044 (2006).
[Crossref]

Bowers, J.

D. Spencer, J. Bauters, M. Heck, and J. Bowers, “Integrated waveguide coupled Si3N4 resonators in the ultrahigh-Q regime,” Optica 1(3), 153–157 (2014).
[Crossref]

G. Roelkens, L. Liu, D. Liang, R. Jones, A. Fang, B. Koch, and J. Bowers, “III‐V/silicon photonics for on‐chip and intra‐chip optical interconnects,” Laser Photonics Rev. 4(6), 751–779 (2010).
[Crossref]

Bowers, J. E.

Bradley, J.

J. Bradley and M. Pollnau, “Erbium‐doped integrated waveguide amplifiers and lasers,” Laser Photonics Rev. 5(3), 368–403 (2011).
[Crossref]

Budd, R. A.

L. Schares, J. A. Kash, F. E. Doany, C. L. Schow, C. Schuster, D. M. Kuchta, P. K. Pepeljugoski, J. M. Trewhella, C. W. Baks, R. A. John, L. Shan, Y. H. Kwark, R. A. Budd, P. Chiniwalla, F. R. Libsch, J. Rosner, C. K. Tsang, C. S. Patel, J. D. Schaub, R. Dangel, F. Horst, B. J. Offrein, D. Kucharski, D. Guckenberger, S. Hegde, H. Nyikal, C.-K. Lin, A. Tandon, G. R. Trott, M. Nystrom, D. P. Bour, M. R. T. Tan, and D. W. Dolfi, “Terabus: terabit/second-class card-level optical interconnect technologies,” IEEE J. Sel. Top. Quantum Electron. 12(5), 1032–1044 (2006).
[Crossref]

Burghartz, J.

Butschke, J.

Casalino, M.

M. Casalino, G. Coppola, M. Iodice, I. Rendina, and L. Sirleto, “Near-infrared sub-bandgap all-silicon photodetectors: state of the art and perspectives,” Sensors (Basel) 10(12), 10571–10600 (2010).
[Crossref] [PubMed]

Chagnon, M.

Chen, A.

Cheng, J.

Cheng, Y.

Y. Cheng, L. Lin, and K. Najafi, “Localized silicon fusion and eutectic bonding for MEMS fabrication and packaging,” J. Microelectromech. Syst. 9(1), 3–8 (2000).
[Crossref]

Chiniwalla, P.

L. Schares, J. A. Kash, F. E. Doany, C. L. Schow, C. Schuster, D. M. Kuchta, P. K. Pepeljugoski, J. M. Trewhella, C. W. Baks, R. A. John, L. Shan, Y. H. Kwark, R. A. Budd, P. Chiniwalla, F. R. Libsch, J. Rosner, C. K. Tsang, C. S. Patel, J. D. Schaub, R. Dangel, F. Horst, B. J. Offrein, D. Kucharski, D. Guckenberger, S. Hegde, H. Nyikal, C.-K. Lin, A. Tandon, G. R. Trott, M. Nystrom, D. P. Bour, M. R. T. Tan, and D. W. Dolfi, “Terabus: terabit/second-class card-level optical interconnect technologies,” IEEE J. Sel. Top. Quantum Electron. 12(5), 1032–1044 (2006).
[Crossref]

Cho, C. H.

Cohen, D.

Coppola, G.

M. Casalino, G. Coppola, M. Iodice, I. Rendina, and L. Sirleto, “Near-infrared sub-bandgap all-silicon photodetectors: state of the art and perspectives,” Sensors (Basel) 10(12), 10571–10600 (2010).
[Crossref] [PubMed]

Cunningham, J. E.

Dangel, R.

L. Schares, J. A. Kash, F. E. Doany, C. L. Schow, C. Schuster, D. M. Kuchta, P. K. Pepeljugoski, J. M. Trewhella, C. W. Baks, R. A. John, L. Shan, Y. H. Kwark, R. A. Budd, P. Chiniwalla, F. R. Libsch, J. Rosner, C. K. Tsang, C. S. Patel, J. D. Schaub, R. Dangel, F. Horst, B. J. Offrein, D. Kucharski, D. Guckenberger, S. Hegde, H. Nyikal, C.-K. Lin, A. Tandon, G. R. Trott, M. Nystrom, D. P. Bour, M. R. T. Tan, and D. W. Dolfi, “Terabus: terabit/second-class card-level optical interconnect technologies,” IEEE J. Sel. Top. Quantum Electron. 12(5), 1032–1044 (2006).
[Crossref]

Davenport, M. L.

Ding, L.

Doany, F. E.

L. Schares, J. A. Kash, F. E. Doany, C. L. Schow, C. Schuster, D. M. Kuchta, P. K. Pepeljugoski, J. M. Trewhella, C. W. Baks, R. A. John, L. Shan, Y. H. Kwark, R. A. Budd, P. Chiniwalla, F. R. Libsch, J. Rosner, C. K. Tsang, C. S. Patel, J. D. Schaub, R. Dangel, F. Horst, B. J. Offrein, D. Kucharski, D. Guckenberger, S. Hegde, H. Nyikal, C.-K. Lin, A. Tandon, G. R. Trott, M. Nystrom, D. P. Bour, M. R. T. Tan, and D. W. Dolfi, “Terabus: terabit/second-class card-level optical interconnect technologies,” IEEE J. Sel. Top. Quantum Electron. 12(5), 1032–1044 (2006).
[Crossref]

Dolfi, D. W.

L. Schares, J. A. Kash, F. E. Doany, C. L. Schow, C. Schuster, D. M. Kuchta, P. K. Pepeljugoski, J. M. Trewhella, C. W. Baks, R. A. John, L. Shan, Y. H. Kwark, R. A. Budd, P. Chiniwalla, F. R. Libsch, J. Rosner, C. K. Tsang, C. S. Patel, J. D. Schaub, R. Dangel, F. Horst, B. J. Offrein, D. Kucharski, D. Guckenberger, S. Hegde, H. Nyikal, C.-K. Lin, A. Tandon, G. R. Trott, M. Nystrom, D. P. Bour, M. R. T. Tan, and D. W. Dolfi, “Terabus: terabit/second-class card-level optical interconnect technologies,” IEEE J. Sel. Top. Quantum Electron. 12(5), 1032–1044 (2006).
[Crossref]

Dong, P.

Doylend, J. K.

Eftekhar, A.

H. Moradinejad, A. Atabaki, A. Hosseinnia, A. Eftekhar, and A. Adibi, “Double-layer crystalline silicon on insulator material platform for integrated photonic applications,” IEEE Photonics J. 6(6), 2500208 (2014).
[Crossref]

Eftekhar, A. A.

Fang, A.

G. Roelkens, L. Liu, D. Liang, R. Jones, A. Fang, B. Koch, and J. Bowers, “III‐V/silicon photonics for on‐chip and intra‐chip optical interconnects,” Laser Photonics Rev. 4(6), 751–779 (2010).
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L. Schares, J. A. Kash, F. E. Doany, C. L. Schow, C. Schuster, D. M. Kuchta, P. K. Pepeljugoski, J. M. Trewhella, C. W. Baks, R. A. John, L. Shan, Y. H. Kwark, R. A. Budd, P. Chiniwalla, F. R. Libsch, J. Rosner, C. K. Tsang, C. S. Patel, J. D. Schaub, R. Dangel, F. Horst, B. J. Offrein, D. Kucharski, D. Guckenberger, S. Hegde, H. Nyikal, C.-K. Lin, A. Tandon, G. R. Trott, M. Nystrom, D. P. Bour, M. R. T. Tan, and D. W. Dolfi, “Terabus: terabit/second-class card-level optical interconnect technologies,” IEEE J. Sel. Top. Quantum Electron. 12(5), 1032–1044 (2006).
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M. Casalino, G. Coppola, M. Iodice, I. Rendina, and L. Sirleto, “Near-infrared sub-bandgap all-silicon photodetectors: state of the art and perspectives,” Sensors (Basel) 10(12), 10571–10600 (2010).
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L. Schares, J. A. Kash, F. E. Doany, C. L. Schow, C. Schuster, D. M. Kuchta, P. K. Pepeljugoski, J. M. Trewhella, C. W. Baks, R. A. John, L. Shan, Y. H. Kwark, R. A. Budd, P. Chiniwalla, F. R. Libsch, J. Rosner, C. K. Tsang, C. S. Patel, J. D. Schaub, R. Dangel, F. Horst, B. J. Offrein, D. Kucharski, D. Guckenberger, S. Hegde, H. Nyikal, C.-K. Lin, A. Tandon, G. R. Trott, M. Nystrom, D. P. Bour, M. R. T. Tan, and D. W. Dolfi, “Terabus: terabit/second-class card-level optical interconnect technologies,” IEEE J. Sel. Top. Quantum Electron. 12(5), 1032–1044 (2006).
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G. Roelkens, L. Liu, D. Liang, R. Jones, A. Fang, B. Koch, and J. Bowers, “III‐V/silicon photonics for on‐chip and intra‐chip optical interconnects,” Laser Photonics Rev. 4(6), 751–779 (2010).
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L. Schares, J. A. Kash, F. E. Doany, C. L. Schow, C. Schuster, D. M. Kuchta, P. K. Pepeljugoski, J. M. Trewhella, C. W. Baks, R. A. John, L. Shan, Y. H. Kwark, R. A. Budd, P. Chiniwalla, F. R. Libsch, J. Rosner, C. K. Tsang, C. S. Patel, J. D. Schaub, R. Dangel, F. Horst, B. J. Offrein, D. Kucharski, D. Guckenberger, S. Hegde, H. Nyikal, C.-K. Lin, A. Tandon, G. R. Trott, M. Nystrom, D. P. Bour, M. R. T. Tan, and D. W. Dolfi, “Terabus: terabit/second-class card-level optical interconnect technologies,” IEEE J. Sel. Top. Quantum Electron. 12(5), 1032–1044 (2006).
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Koch, B.

G. Roelkens, L. Liu, D. Liang, R. Jones, A. Fang, B. Koch, and J. Bowers, “III‐V/silicon photonics for on‐chip and intra‐chip optical interconnects,” Laser Photonics Rev. 4(6), 751–779 (2010).
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L. Schares, J. A. Kash, F. E. Doany, C. L. Schow, C. Schuster, D. M. Kuchta, P. K. Pepeljugoski, J. M. Trewhella, C. W. Baks, R. A. John, L. Shan, Y. H. Kwark, R. A. Budd, P. Chiniwalla, F. R. Libsch, J. Rosner, C. K. Tsang, C. S. Patel, J. D. Schaub, R. Dangel, F. Horst, B. J. Offrein, D. Kucharski, D. Guckenberger, S. Hegde, H. Nyikal, C.-K. Lin, A. Tandon, G. R. Trott, M. Nystrom, D. P. Bour, M. R. T. Tan, and D. W. Dolfi, “Terabus: terabit/second-class card-level optical interconnect technologies,” IEEE J. Sel. Top. Quantum Electron. 12(5), 1032–1044 (2006).
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L. Schares, J. A. Kash, F. E. Doany, C. L. Schow, C. Schuster, D. M. Kuchta, P. K. Pepeljugoski, J. M. Trewhella, C. W. Baks, R. A. John, L. Shan, Y. H. Kwark, R. A. Budd, P. Chiniwalla, F. R. Libsch, J. Rosner, C. K. Tsang, C. S. Patel, J. D. Schaub, R. Dangel, F. Horst, B. J. Offrein, D. Kucharski, D. Guckenberger, S. Hegde, H. Nyikal, C.-K. Lin, A. Tandon, G. R. Trott, M. Nystrom, D. P. Bour, M. R. T. Tan, and D. W. Dolfi, “Terabus: terabit/second-class card-level optical interconnect technologies,” IEEE J. Sel. Top. Quantum Electron. 12(5), 1032–1044 (2006).
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Kung, C.-C.

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L. Schares, J. A. Kash, F. E. Doany, C. L. Schow, C. Schuster, D. M. Kuchta, P. K. Pepeljugoski, J. M. Trewhella, C. W. Baks, R. A. John, L. Shan, Y. H. Kwark, R. A. Budd, P. Chiniwalla, F. R. Libsch, J. Rosner, C. K. Tsang, C. S. Patel, J. D. Schaub, R. Dangel, F. Horst, B. J. Offrein, D. Kucharski, D. Guckenberger, S. Hegde, H. Nyikal, C.-K. Lin, A. Tandon, G. R. Trott, M. Nystrom, D. P. Bour, M. R. T. Tan, and D. W. Dolfi, “Terabus: terabit/second-class card-level optical interconnect technologies,” IEEE J. Sel. Top. Quantum Electron. 12(5), 1032–1044 (2006).
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G. Roelkens, L. Liu, D. Liang, R. Jones, A. Fang, B. Koch, and J. Bowers, “III‐V/silicon photonics for on‐chip and intra‐chip optical interconnects,” Laser Photonics Rev. 4(6), 751–779 (2010).
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L. Schares, J. A. Kash, F. E. Doany, C. L. Schow, C. Schuster, D. M. Kuchta, P. K. Pepeljugoski, J. M. Trewhella, C. W. Baks, R. A. John, L. Shan, Y. H. Kwark, R. A. Budd, P. Chiniwalla, F. R. Libsch, J. Rosner, C. K. Tsang, C. S. Patel, J. D. Schaub, R. Dangel, F. Horst, B. J. Offrein, D. Kucharski, D. Guckenberger, S. Hegde, H. Nyikal, C.-K. Lin, A. Tandon, G. R. Trott, M. Nystrom, D. P. Bour, M. R. T. Tan, and D. W. Dolfi, “Terabus: terabit/second-class card-level optical interconnect technologies,” IEEE J. Sel. Top. Quantum Electron. 12(5), 1032–1044 (2006).
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L. Schares, J. A. Kash, F. E. Doany, C. L. Schow, C. Schuster, D. M. Kuchta, P. K. Pepeljugoski, J. M. Trewhella, C. W. Baks, R. A. John, L. Shan, Y. H. Kwark, R. A. Budd, P. Chiniwalla, F. R. Libsch, J. Rosner, C. K. Tsang, C. S. Patel, J. D. Schaub, R. Dangel, F. Horst, B. J. Offrein, D. Kucharski, D. Guckenberger, S. Hegde, H. Nyikal, C.-K. Lin, A. Tandon, G. R. Trott, M. Nystrom, D. P. Bour, M. R. T. Tan, and D. W. Dolfi, “Terabus: terabit/second-class card-level optical interconnect technologies,” IEEE J. Sel. Top. Quantum Electron. 12(5), 1032–1044 (2006).
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B. L. Weiss, G. T. Reed, S. K. Toh, R. A. Soref, and F. Namavar, “Optical waveguides in SIMOX structures,” IEEE Photonics Technol. Lett. 3(1), 19–21 (1991).
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L. Schares, J. A. Kash, F. E. Doany, C. L. Schow, C. Schuster, D. M. Kuchta, P. K. Pepeljugoski, J. M. Trewhella, C. W. Baks, R. A. John, L. Shan, Y. H. Kwark, R. A. Budd, P. Chiniwalla, F. R. Libsch, J. Rosner, C. K. Tsang, C. S. Patel, J. D. Schaub, R. Dangel, F. Horst, B. J. Offrein, D. Kucharski, D. Guckenberger, S. Hegde, H. Nyikal, C.-K. Lin, A. Tandon, G. R. Trott, M. Nystrom, D. P. Bour, M. R. T. Tan, and D. W. Dolfi, “Terabus: terabit/second-class card-level optical interconnect technologies,” IEEE J. Sel. Top. Quantum Electron. 12(5), 1032–1044 (2006).
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L. Schares, J. A. Kash, F. E. Doany, C. L. Schow, C. Schuster, D. M. Kuchta, P. K. Pepeljugoski, J. M. Trewhella, C. W. Baks, R. A. John, L. Shan, Y. H. Kwark, R. A. Budd, P. Chiniwalla, F. R. Libsch, J. Rosner, C. K. Tsang, C. S. Patel, J. D. Schaub, R. Dangel, F. Horst, B. J. Offrein, D. Kucharski, D. Guckenberger, S. Hegde, H. Nyikal, C.-K. Lin, A. Tandon, G. R. Trott, M. Nystrom, D. P. Bour, M. R. T. Tan, and D. W. Dolfi, “Terabus: terabit/second-class card-level optical interconnect technologies,” IEEE J. Sel. Top. Quantum Electron. 12(5), 1032–1044 (2006).
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L. Schares, J. A. Kash, F. E. Doany, C. L. Schow, C. Schuster, D. M. Kuchta, P. K. Pepeljugoski, J. M. Trewhella, C. W. Baks, R. A. John, L. Shan, Y. H. Kwark, R. A. Budd, P. Chiniwalla, F. R. Libsch, J. Rosner, C. K. Tsang, C. S. Patel, J. D. Schaub, R. Dangel, F. Horst, B. J. Offrein, D. Kucharski, D. Guckenberger, S. Hegde, H. Nyikal, C.-K. Lin, A. Tandon, G. R. Trott, M. Nystrom, D. P. Bour, M. R. T. Tan, and D. W. Dolfi, “Terabus: terabit/second-class card-level optical interconnect technologies,” IEEE J. Sel. Top. Quantum Electron. 12(5), 1032–1044 (2006).
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Y. Bertholet, F. Iker, J.-P. Raskin, and T. Pardoen, “Steady-state measurement of wafer bonding cracking resistance,” Sens. Actuators A Phys. 110(1-3), 157–163 (2004).
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L. Schares, J. A. Kash, F. E. Doany, C. L. Schow, C. Schuster, D. M. Kuchta, P. K. Pepeljugoski, J. M. Trewhella, C. W. Baks, R. A. John, L. Shan, Y. H. Kwark, R. A. Budd, P. Chiniwalla, F. R. Libsch, J. Rosner, C. K. Tsang, C. S. Patel, J. D. Schaub, R. Dangel, F. Horst, B. J. Offrein, D. Kucharski, D. Guckenberger, S. Hegde, H. Nyikal, C.-K. Lin, A. Tandon, G. R. Trott, M. Nystrom, D. P. Bour, M. R. T. Tan, and D. W. Dolfi, “Terabus: terabit/second-class card-level optical interconnect technologies,” IEEE J. Sel. Top. Quantum Electron. 12(5), 1032–1044 (2006).
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L. Schares, J. A. Kash, F. E. Doany, C. L. Schow, C. Schuster, D. M. Kuchta, P. K. Pepeljugoski, J. M. Trewhella, C. W. Baks, R. A. John, L. Shan, Y. H. Kwark, R. A. Budd, P. Chiniwalla, F. R. Libsch, J. Rosner, C. K. Tsang, C. S. Patel, J. D. Schaub, R. Dangel, F. Horst, B. J. Offrein, D. Kucharski, D. Guckenberger, S. Hegde, H. Nyikal, C.-K. Lin, A. Tandon, G. R. Trott, M. Nystrom, D. P. Bour, M. R. T. Tan, and D. W. Dolfi, “Terabus: terabit/second-class card-level optical interconnect technologies,” IEEE J. Sel. Top. Quantum Electron. 12(5), 1032–1044 (2006).
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B. L. Weiss, G. T. Reed, S. K. Toh, R. A. Soref, and F. Namavar, “Optical waveguides in SIMOX structures,” IEEE Photonics Technol. Lett. 3(1), 19–21 (1991).
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Roelkens, G.

G. Roelkens, L. Liu, D. Liang, R. Jones, A. Fang, B. Koch, and J. Bowers, “III‐V/silicon photonics for on‐chip and intra‐chip optical interconnects,” Laser Photonics Rev. 4(6), 751–779 (2010).
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L. Schares, J. A. Kash, F. E. Doany, C. L. Schow, C. Schuster, D. M. Kuchta, P. K. Pepeljugoski, J. M. Trewhella, C. W. Baks, R. A. John, L. Shan, Y. H. Kwark, R. A. Budd, P. Chiniwalla, F. R. Libsch, J. Rosner, C. K. Tsang, C. S. Patel, J. D. Schaub, R. Dangel, F. Horst, B. J. Offrein, D. Kucharski, D. Guckenberger, S. Hegde, H. Nyikal, C.-K. Lin, A. Tandon, G. R. Trott, M. Nystrom, D. P. Bour, M. R. T. Tan, and D. W. Dolfi, “Terabus: terabit/second-class card-level optical interconnect technologies,” IEEE J. Sel. Top. Quantum Electron. 12(5), 1032–1044 (2006).
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M. Casalino, G. Coppola, M. Iodice, I. Rendina, and L. Sirleto, “Near-infrared sub-bandgap all-silicon photodetectors: state of the art and perspectives,” Sensors (Basel) 10(12), 10571–10600 (2010).
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Sodagar, M.

Soltani, M.

Sorace-Agaskar, C. M.

E. Timurdogan, C. M. Sorace-Agaskar, J. Sun, E. Shah Hosseini, A. Biberman, and M. R. Watts, “An ultralow power athermal silicon modulator,” Nat. Commun. 5, 4008 (2014).
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Sze, T.

Tan, M. R. T.

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E. Timurdogan, C. M. Sorace-Agaskar, J. Sun, E. Shah Hosseini, A. Biberman, and M. R. Watts, “An ultralow power athermal silicon modulator,” Nat. Commun. 5, 4008 (2014).
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B. L. Weiss, G. T. Reed, S. K. Toh, R. A. Soref, and F. Namavar, “Optical waveguides in SIMOX structures,” IEEE Photonics Technol. Lett. 3(1), 19–21 (1991).
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L. Schares, J. A. Kash, F. E. Doany, C. L. Schow, C. Schuster, D. M. Kuchta, P. K. Pepeljugoski, J. M. Trewhella, C. W. Baks, R. A. John, L. Shan, Y. H. Kwark, R. A. Budd, P. Chiniwalla, F. R. Libsch, J. Rosner, C. K. Tsang, C. S. Patel, J. D. Schaub, R. Dangel, F. Horst, B. J. Offrein, D. Kucharski, D. Guckenberger, S. Hegde, H. Nyikal, C.-K. Lin, A. Tandon, G. R. Trott, M. Nystrom, D. P. Bour, M. R. T. Tan, and D. W. Dolfi, “Terabus: terabit/second-class card-level optical interconnect technologies,” IEEE J. Sel. Top. Quantum Electron. 12(5), 1032–1044 (2006).
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L. Schares, J. A. Kash, F. E. Doany, C. L. Schow, C. Schuster, D. M. Kuchta, P. K. Pepeljugoski, J. M. Trewhella, C. W. Baks, R. A. John, L. Shan, Y. H. Kwark, R. A. Budd, P. Chiniwalla, F. R. Libsch, J. Rosner, C. K. Tsang, C. S. Patel, J. D. Schaub, R. Dangel, F. Horst, B. J. Offrein, D. Kucharski, D. Guckenberger, S. Hegde, H. Nyikal, C.-K. Lin, A. Tandon, G. R. Trott, M. Nystrom, D. P. Bour, M. R. T. Tan, and D. W. Dolfi, “Terabus: terabit/second-class card-level optical interconnect technologies,” IEEE J. Sel. Top. Quantum Electron. 12(5), 1032–1044 (2006).
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L. Schares, J. A. Kash, F. E. Doany, C. L. Schow, C. Schuster, D. M. Kuchta, P. K. Pepeljugoski, J. M. Trewhella, C. W. Baks, R. A. John, L. Shan, Y. H. Kwark, R. A. Budd, P. Chiniwalla, F. R. Libsch, J. Rosner, C. K. Tsang, C. S. Patel, J. D. Schaub, R. Dangel, F. Horst, B. J. Offrein, D. Kucharski, D. Guckenberger, S. Hegde, H. Nyikal, C.-K. Lin, A. Tandon, G. R. Trott, M. Nystrom, D. P. Bour, M. R. T. Tan, and D. W. Dolfi, “Terabus: terabit/second-class card-level optical interconnect technologies,” IEEE J. Sel. Top. Quantum Electron. 12(5), 1032–1044 (2006).
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B. L. Weiss, G. T. Reed, S. K. Toh, R. A. Soref, and F. Namavar, “Optical waveguides in SIMOX structures,” IEEE Photonics Technol. Lett. 3(1), 19–21 (1991).
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F. Xia, L. Sekaric, and Y. Vlasov, “Ultracompact optical buffers on a silicon chip,” Nat. Photonics 1(1), 65–71 (2007).
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Figures (7)

Fig. 1
Fig. 1

Summary of the SON platform fabrication process. (a) Piece 1, an SOI piece. (b) Dry thermal oxidation reduces the Si thickness. (c) Wet etching of SiO2 followed by the second dry oxidation. (d) Piece 2, a bare Si piece, goes through oxidation to grow 5 μm of SiO2. (e) An LPCVD SiN layer is deposited, followed by the deposition of a 30-nm SiO2 layer using ALD. (f) Vent channels are introduced using optical lithography, dry etching of SiN, and wet etching of bottom SiO2 layer. (g) Two pieces are bonded using a low-temperature hydrophilic bonding method. (h) Backside removal of the Si substrate followed by wet etching of the BOX layer.

Fig. 2
Fig. 2

AFM images from the surface of a 30-nm SiO2 layer on SiN, deposited by (a) HSQ annealing, average surface roughness (Ra) is 2.39 Å; (b) ALD, Ra = 3.83 Å; (c) PECVD, Ra = 7.45 Å.

Fig. 3
Fig. 3

(a) Top view of a void-free bonded SON piece under optical microscope. Lines represent vent channels. (b) The cross-sectional SEM of a typical vent channel after bonding process. (c) A bonded sample at the edge where the vent channels are terminated. Bubbles can be clearly seen in the area without vent channels, while the channeled area is void-free.

Fig. 4
Fig. 4

(a) The schematic of the proposed coherent vertical tapering method. (b) The cross-sectional image of the electric field profile along the length of a 30-μm coherent vertical coupler; the inset is the top-view image of the coupler and the dashed line indicates the cross-section surface. (c) The computed transmission efficiency of an adiabatic interlayer coupler designed with the coherent tapering technique (solid line) compared to an efficient design of an interlayer coupler using the inverse tapering technique (dashed line). For the latter, the reported geometry in [34] is used.

Fig. 5
Fig. 5

A brief overview of the device fabrication process on the SON platform. (a) The first pattern is transferred to HSQ using an EBL machine. (b) The Si device layer is etched to transfer the pattern. (c) The second pattern is transferred to ZEP using the EBL machine. (d) The interface SiO2 layer and SiN layer are etched to define the aligned second pattern on SiN.

Fig. 6
Fig. 6

(a) Colorized SEM of the adiabatic coherent vertical coupler; (b) Colorized SEM of the compact vertical coupler. (c) The experimentally measured (solid line, magenta) and theoretically calculated (dashed line, blue) spectra of the coupling efficiency of the adiabatic vertical coupler, and (d) the experimentally measured (solid line, magenta) and theoretically calculated (dashed line, blue) spectra of the coupling efficiency of the compact vertical coupler. The shaded areas in (c) and (d) mark the regions outside the bandwidth of the access input/output gratings.

Fig. 7
Fig. 7

(a) A schematic of the hybrid optical path with SEMs of constituent elements in the path. (b) The transmission spectrum of a 60 μm radius multimode ring resonator fabricated on the SON chip. (c) The transmission spectrum of the same SiN resonator fabricated on the inspection SiN chip. As depicted in the inset figures, the highest intrinsic quality factor in each platform is measured to be Qint ≈3 × 106. In both of the measurements, the spectrum is limited by the input/output grating bandwidth (Si gratings in (b) and SiN gratings in (c)).

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