Abstract

We report fabrication and optical characteristics of an InGaP/GaAs heterojunction phototransistor (HPT) transferred to a Si substrate by a metal wafer bonding (MWB) and epitaxial lift-off (ELO) process at room temperature. An intermediate Pt/Au double layer between the HPT layer and Si provided a very smooth surface by which to achieve the MWB, and excellent durability against the acid solution during the ELO process. These processes were observed using scanning electron microscope (SEM) and atomic force microscopy (AFM). While the results on a low temperature photoluminescence (LTPL) signal and high resolution x-ray diffraction (HRXRD) rocking curve of the bonded device film implied a defect-free bonding, a very low collector dark current of the fabricated HPT was observed. The optical performance of a bonded InGaP/GaAs HPT on Si, operating at 635 nm wavelength is also investigated.

© 2015 Optical Society of America

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  1. S. Chandrasekhar, L. M. Lunardi, A. H. Gnauck, R. A. Hamm, and G. J. Qua, “High-speed monolithic p-i-n/HBT and HPT/HBT photoreceivers implemented with Simple Phototransistor Structure,” IEEE Photonics Technol. Lett. 5(11), 1316–1318 (1993).
    [Crossref]
  2. M. S. Park and J. H. Jang, “Enhancement of optical gain in floating-base InGaP-GaAs heterojunction phototransistors,” IEEE Photonics Technol. Lett. 22(16), 1202–1204 (2010).
    [Crossref]
  3. W. T. Chen, H. R. Chen, S. Y. Chiu, M. K. Hsu, J. H. Tsai, and W. S. Lour, “Promoted potential of heterojunction phototransistor for low-power photodetection by surface sulfur treatment,” J. Electrochem. Soc. 154(7), H552–H556 (2007).
    [Crossref]
  4. C. Y. Liao, K. P. Hsueh, J. Z. Tsai, Y. S. Lee, W. M. Hsin, and Y. M. Hsin, “An AlGaAs/GaAs photo-transistor-based fluorescence detection,” J. Electrochem. Soc. 160(9), B156–B159 (2013).
    [Crossref]
  5. J. S. Youn, M. J. Lee, K. Y. Park, and W. Y. Choi, “10-Gb/s 850-nm CMOS OEIC receiver with a silicon avalanche photodetector,” IEEE J. Quantum Electron. 48(2), 229–236 (2012).
    [Crossref]
  6. L. Vivien, A. Polzer, D. Marris-Morini, J. Osmond, J. M. Hartmann, P. Crozat, E. Cassan, C. Kopp, H. Zimmermann, and J. M. Fédéli, “Zero-bias 40Gbit/s germanium waveguide photodetector on silicon,” Opt. Express 20(2), 1096–1101 (2012).
    [Crossref] [PubMed]
  7. O. Moutanabbir and U. Gösele, “Heterogeneous integration of compound semiconductors,” Annu. Rev. Mater. Res. 40(1), 469–500 (2010).
    [Crossref]
  8. S. H. Kim, M. S. Park, D. M. Geum, H. S. Kim, G. H. Ryu, H. D. Yang, J. D. Song, C. Z. Kim, and W. J. Choi, “Fabrication and characterization of single junction GaAs solar cell epitaxially grown on Si substrate,” Curr. Appl. Phys. (to be published).
  9. K. Tanabe, K. Watanabe, and Y. Arakawa, “III-V/Si hybrid photonic devices by direct fusion bonding,” Sci. Rep. 2, 349 (2012).
    [Crossref] [PubMed]
  10. K. Derendorf, S. Essig, E. Oliva, V. Klinger, T. Roesener, S. P. Philipps, J. Benick, M. Hermle, M. Schachtner, G. Siefer, W. Jäger, and F. Dimroth, “Fabrication of GaInP/GaAs//Si solar cells by surface activated direct wafer bonding,” IEEE J. Photovolt. 3(4), 1423–1428 (2013).
    [Crossref]
  11. P. D. Moran, D. Chow, A. Hunter, and T. F. Kuech, “Fabrication of InAs/AlSb/GaSb heterojunction bipolar transistors on Al2O3 substrates by wafer bonding,” Appl. Phys. Lett. 78(15), 2232–2234 (2001).
    [Crossref]
  12. S. H. Kim, Y. Ikku, M. Yokoyama, R. Nakane, J. Li, Y. C. Kao, M. Takenaka, and S. Takagi, “Direct wafer bonding technology for large-scale InGaAs-on-insulator transistors,” Appl. Phys. Lett. 105(4), 043504 (2014).
    [Crossref]
  13. D. W. Scott, C. Monier, S. Wang, V. Radisic, P. Nguyen, A. Cavus, W. R. Deal, and A. Gutierrez-Aitken, “InP HBT transferred to higher thermal conductivity substrate,” IEEE Electron Device Lett. 33(4), 507–509 (2012).
    [Crossref]
  14. Y. Yamaguchi, T. Sagai, and Y. Miyamoto, “Fabrication of InP/InGaAs SHBT on Si substrate by using transferred substrate,” IEICE Trans. Electron. 95(8), 1323–1326 (2012).
    [Crossref]
  15. Y. H. Jhang, K. Tanabe, S. Iwamoto, and Y. Arakawa, “InAs/GaAs quantum dot lasers on silicon-on-insulator substrates by metal-strip wafer bonding,” IEEE Photonics Technol. Lett. 27(8), 875–878 (2015).
    [Crossref]
  16. E. Jing, B. Xiong, and Y. Wang, “Low-temperature Au-Si wafer bonding,” J. Micromech. Microeng. 20(9), 095014 (2010).
    [Crossref]
  17. N. Li, H. Chen, N. Duan, M. Liu, S. Demiguel, R. Sidhu, A. L. Holmes, and J. C. Campbell, “High power photodiode wafer bonded to Si using Au with improved responsivity and output power,” IEEE Photonics Technol. Lett. 18(23), 2526–2528 (2006).
    [Crossref]
  18. C. W. Cheng, K. T. Shiu, N. Li, S. J. Han, L. Shi, and D. K. Sadana, “Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics,” Nat. Commun. 4, 1577 (2013).
    [Crossref] [PubMed]
  19. T. Sogabe, Y. Shoji, P. Mulder, J. Schermer, E. Tamayo, and Y. Okada, “Enhancement of current collection in epitaxial lift-off InAs/GaAs quantum dot thin film solar cell and concentrated photovoltaic study,” Appl. Phys. Lett. 105(11), 113904 (2014).
    [Crossref]
  20. J. J. Schermer, G. J. Bauhuis, P. Mulder, W. J. Meulemeesters, E. Haverkamp, M. M. A. J. Voncken, and P. K. Larsen, “High rate epitaxial lift-off of InGaP films from GaAs substrates,” Appl. Phys. Lett. 76(15), 2131–2133 (2000).
    [Crossref]
  21. Y. Moriyama, K. Ikeda, S. Takeuchi, Y. Kamimuta, Y. Nakamura, K. Izunome, A. Sakai, and T. Tezuka, “Ultrathin-body Ge-on-insulator wafers fabricated with strongly bonded thin Al2O3/SiO2 hybrid buried oxide layers,” Appl. Phys. Express 7(8), 086501 (2014).
    [Crossref]
  22. G. Brammertz, Y. Mols, S. Degroote, V. Motsnyi, M. Leys, G. Borghs, and M. Caymax, “Low-temperature photoluminescence study of thin epitaxial GaAs films on Ge substrates,” J. Appl. Phys. 99(9), 093514 (2006).
    [Crossref]
  23. M. K. Hudait, P. Modak, and S. B. Krupanidhi, “Si incorporation and Burstein–Moss shift in n-type GaAs,” Math. Sci. Eng. B 60(1), 1–11 (1999).
    [Crossref]

2015 (1)

Y. H. Jhang, K. Tanabe, S. Iwamoto, and Y. Arakawa, “InAs/GaAs quantum dot lasers on silicon-on-insulator substrates by metal-strip wafer bonding,” IEEE Photonics Technol. Lett. 27(8), 875–878 (2015).
[Crossref]

2014 (3)

T. Sogabe, Y. Shoji, P. Mulder, J. Schermer, E. Tamayo, and Y. Okada, “Enhancement of current collection in epitaxial lift-off InAs/GaAs quantum dot thin film solar cell and concentrated photovoltaic study,” Appl. Phys. Lett. 105(11), 113904 (2014).
[Crossref]

S. H. Kim, Y. Ikku, M. Yokoyama, R. Nakane, J. Li, Y. C. Kao, M. Takenaka, and S. Takagi, “Direct wafer bonding technology for large-scale InGaAs-on-insulator transistors,” Appl. Phys. Lett. 105(4), 043504 (2014).
[Crossref]

Y. Moriyama, K. Ikeda, S. Takeuchi, Y. Kamimuta, Y. Nakamura, K. Izunome, A. Sakai, and T. Tezuka, “Ultrathin-body Ge-on-insulator wafers fabricated with strongly bonded thin Al2O3/SiO2 hybrid buried oxide layers,” Appl. Phys. Express 7(8), 086501 (2014).
[Crossref]

2013 (3)

C. W. Cheng, K. T. Shiu, N. Li, S. J. Han, L. Shi, and D. K. Sadana, “Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics,” Nat. Commun. 4, 1577 (2013).
[Crossref] [PubMed]

K. Derendorf, S. Essig, E. Oliva, V. Klinger, T. Roesener, S. P. Philipps, J. Benick, M. Hermle, M. Schachtner, G. Siefer, W. Jäger, and F. Dimroth, “Fabrication of GaInP/GaAs//Si solar cells by surface activated direct wafer bonding,” IEEE J. Photovolt. 3(4), 1423–1428 (2013).
[Crossref]

C. Y. Liao, K. P. Hsueh, J. Z. Tsai, Y. S. Lee, W. M. Hsin, and Y. M. Hsin, “An AlGaAs/GaAs photo-transistor-based fluorescence detection,” J. Electrochem. Soc. 160(9), B156–B159 (2013).
[Crossref]

2012 (5)

J. S. Youn, M. J. Lee, K. Y. Park, and W. Y. Choi, “10-Gb/s 850-nm CMOS OEIC receiver with a silicon avalanche photodetector,” IEEE J. Quantum Electron. 48(2), 229–236 (2012).
[Crossref]

L. Vivien, A. Polzer, D. Marris-Morini, J. Osmond, J. M. Hartmann, P. Crozat, E. Cassan, C. Kopp, H. Zimmermann, and J. M. Fédéli, “Zero-bias 40Gbit/s germanium waveguide photodetector on silicon,” Opt. Express 20(2), 1096–1101 (2012).
[Crossref] [PubMed]

K. Tanabe, K. Watanabe, and Y. Arakawa, “III-V/Si hybrid photonic devices by direct fusion bonding,” Sci. Rep. 2, 349 (2012).
[Crossref] [PubMed]

D. W. Scott, C. Monier, S. Wang, V. Radisic, P. Nguyen, A. Cavus, W. R. Deal, and A. Gutierrez-Aitken, “InP HBT transferred to higher thermal conductivity substrate,” IEEE Electron Device Lett. 33(4), 507–509 (2012).
[Crossref]

Y. Yamaguchi, T. Sagai, and Y. Miyamoto, “Fabrication of InP/InGaAs SHBT on Si substrate by using transferred substrate,” IEICE Trans. Electron. 95(8), 1323–1326 (2012).
[Crossref]

2010 (3)

E. Jing, B. Xiong, and Y. Wang, “Low-temperature Au-Si wafer bonding,” J. Micromech. Microeng. 20(9), 095014 (2010).
[Crossref]

M. S. Park and J. H. Jang, “Enhancement of optical gain in floating-base InGaP-GaAs heterojunction phototransistors,” IEEE Photonics Technol. Lett. 22(16), 1202–1204 (2010).
[Crossref]

O. Moutanabbir and U. Gösele, “Heterogeneous integration of compound semiconductors,” Annu. Rev. Mater. Res. 40(1), 469–500 (2010).
[Crossref]

2007 (1)

W. T. Chen, H. R. Chen, S. Y. Chiu, M. K. Hsu, J. H. Tsai, and W. S. Lour, “Promoted potential of heterojunction phototransistor for low-power photodetection by surface sulfur treatment,” J. Electrochem. Soc. 154(7), H552–H556 (2007).
[Crossref]

2006 (2)

N. Li, H. Chen, N. Duan, M. Liu, S. Demiguel, R. Sidhu, A. L. Holmes, and J. C. Campbell, “High power photodiode wafer bonded to Si using Au with improved responsivity and output power,” IEEE Photonics Technol. Lett. 18(23), 2526–2528 (2006).
[Crossref]

G. Brammertz, Y. Mols, S. Degroote, V. Motsnyi, M. Leys, G. Borghs, and M. Caymax, “Low-temperature photoluminescence study of thin epitaxial GaAs films on Ge substrates,” J. Appl. Phys. 99(9), 093514 (2006).
[Crossref]

2001 (1)

P. D. Moran, D. Chow, A. Hunter, and T. F. Kuech, “Fabrication of InAs/AlSb/GaSb heterojunction bipolar transistors on Al2O3 substrates by wafer bonding,” Appl. Phys. Lett. 78(15), 2232–2234 (2001).
[Crossref]

2000 (1)

J. J. Schermer, G. J. Bauhuis, P. Mulder, W. J. Meulemeesters, E. Haverkamp, M. M. A. J. Voncken, and P. K. Larsen, “High rate epitaxial lift-off of InGaP films from GaAs substrates,” Appl. Phys. Lett. 76(15), 2131–2133 (2000).
[Crossref]

1999 (1)

M. K. Hudait, P. Modak, and S. B. Krupanidhi, “Si incorporation and Burstein–Moss shift in n-type GaAs,” Math. Sci. Eng. B 60(1), 1–11 (1999).
[Crossref]

1993 (1)

S. Chandrasekhar, L. M. Lunardi, A. H. Gnauck, R. A. Hamm, and G. J. Qua, “High-speed monolithic p-i-n/HBT and HPT/HBT photoreceivers implemented with Simple Phototransistor Structure,” IEEE Photonics Technol. Lett. 5(11), 1316–1318 (1993).
[Crossref]

Arakawa, Y.

Y. H. Jhang, K. Tanabe, S. Iwamoto, and Y. Arakawa, “InAs/GaAs quantum dot lasers on silicon-on-insulator substrates by metal-strip wafer bonding,” IEEE Photonics Technol. Lett. 27(8), 875–878 (2015).
[Crossref]

K. Tanabe, K. Watanabe, and Y. Arakawa, “III-V/Si hybrid photonic devices by direct fusion bonding,” Sci. Rep. 2, 349 (2012).
[Crossref] [PubMed]

Bauhuis, G. J.

J. J. Schermer, G. J. Bauhuis, P. Mulder, W. J. Meulemeesters, E. Haverkamp, M. M. A. J. Voncken, and P. K. Larsen, “High rate epitaxial lift-off of InGaP films from GaAs substrates,” Appl. Phys. Lett. 76(15), 2131–2133 (2000).
[Crossref]

Benick, J.

K. Derendorf, S. Essig, E. Oliva, V. Klinger, T. Roesener, S. P. Philipps, J. Benick, M. Hermle, M. Schachtner, G. Siefer, W. Jäger, and F. Dimroth, “Fabrication of GaInP/GaAs//Si solar cells by surface activated direct wafer bonding,” IEEE J. Photovolt. 3(4), 1423–1428 (2013).
[Crossref]

Borghs, G.

G. Brammertz, Y. Mols, S. Degroote, V. Motsnyi, M. Leys, G. Borghs, and M. Caymax, “Low-temperature photoluminescence study of thin epitaxial GaAs films on Ge substrates,” J. Appl. Phys. 99(9), 093514 (2006).
[Crossref]

Brammertz, G.

G. Brammertz, Y. Mols, S. Degroote, V. Motsnyi, M. Leys, G. Borghs, and M. Caymax, “Low-temperature photoluminescence study of thin epitaxial GaAs films on Ge substrates,” J. Appl. Phys. 99(9), 093514 (2006).
[Crossref]

Campbell, J. C.

N. Li, H. Chen, N. Duan, M. Liu, S. Demiguel, R. Sidhu, A. L. Holmes, and J. C. Campbell, “High power photodiode wafer bonded to Si using Au with improved responsivity and output power,” IEEE Photonics Technol. Lett. 18(23), 2526–2528 (2006).
[Crossref]

Cassan, E.

Cavus, A.

D. W. Scott, C. Monier, S. Wang, V. Radisic, P. Nguyen, A. Cavus, W. R. Deal, and A. Gutierrez-Aitken, “InP HBT transferred to higher thermal conductivity substrate,” IEEE Electron Device Lett. 33(4), 507–509 (2012).
[Crossref]

Caymax, M.

G. Brammertz, Y. Mols, S. Degroote, V. Motsnyi, M. Leys, G. Borghs, and M. Caymax, “Low-temperature photoluminescence study of thin epitaxial GaAs films on Ge substrates,” J. Appl. Phys. 99(9), 093514 (2006).
[Crossref]

Chandrasekhar, S.

S. Chandrasekhar, L. M. Lunardi, A. H. Gnauck, R. A. Hamm, and G. J. Qua, “High-speed monolithic p-i-n/HBT and HPT/HBT photoreceivers implemented with Simple Phototransistor Structure,” IEEE Photonics Technol. Lett. 5(11), 1316–1318 (1993).
[Crossref]

Chen, H.

N. Li, H. Chen, N. Duan, M. Liu, S. Demiguel, R. Sidhu, A. L. Holmes, and J. C. Campbell, “High power photodiode wafer bonded to Si using Au with improved responsivity and output power,” IEEE Photonics Technol. Lett. 18(23), 2526–2528 (2006).
[Crossref]

Chen, H. R.

W. T. Chen, H. R. Chen, S. Y. Chiu, M. K. Hsu, J. H. Tsai, and W. S. Lour, “Promoted potential of heterojunction phototransistor for low-power photodetection by surface sulfur treatment,” J. Electrochem. Soc. 154(7), H552–H556 (2007).
[Crossref]

Chen, W. T.

W. T. Chen, H. R. Chen, S. Y. Chiu, M. K. Hsu, J. H. Tsai, and W. S. Lour, “Promoted potential of heterojunction phototransistor for low-power photodetection by surface sulfur treatment,” J. Electrochem. Soc. 154(7), H552–H556 (2007).
[Crossref]

Cheng, C. W.

C. W. Cheng, K. T. Shiu, N. Li, S. J. Han, L. Shi, and D. K. Sadana, “Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics,” Nat. Commun. 4, 1577 (2013).
[Crossref] [PubMed]

Chiu, S. Y.

W. T. Chen, H. R. Chen, S. Y. Chiu, M. K. Hsu, J. H. Tsai, and W. S. Lour, “Promoted potential of heterojunction phototransistor for low-power photodetection by surface sulfur treatment,” J. Electrochem. Soc. 154(7), H552–H556 (2007).
[Crossref]

Choi, W. J.

S. H. Kim, M. S. Park, D. M. Geum, H. S. Kim, G. H. Ryu, H. D. Yang, J. D. Song, C. Z. Kim, and W. J. Choi, “Fabrication and characterization of single junction GaAs solar cell epitaxially grown on Si substrate,” Curr. Appl. Phys. (to be published).

Choi, W. Y.

J. S. Youn, M. J. Lee, K. Y. Park, and W. Y. Choi, “10-Gb/s 850-nm CMOS OEIC receiver with a silicon avalanche photodetector,” IEEE J. Quantum Electron. 48(2), 229–236 (2012).
[Crossref]

Chow, D.

P. D. Moran, D. Chow, A. Hunter, and T. F. Kuech, “Fabrication of InAs/AlSb/GaSb heterojunction bipolar transistors on Al2O3 substrates by wafer bonding,” Appl. Phys. Lett. 78(15), 2232–2234 (2001).
[Crossref]

Crozat, P.

Deal, W. R.

D. W. Scott, C. Monier, S. Wang, V. Radisic, P. Nguyen, A. Cavus, W. R. Deal, and A. Gutierrez-Aitken, “InP HBT transferred to higher thermal conductivity substrate,” IEEE Electron Device Lett. 33(4), 507–509 (2012).
[Crossref]

Degroote, S.

G. Brammertz, Y. Mols, S. Degroote, V. Motsnyi, M. Leys, G. Borghs, and M. Caymax, “Low-temperature photoluminescence study of thin epitaxial GaAs films on Ge substrates,” J. Appl. Phys. 99(9), 093514 (2006).
[Crossref]

Demiguel, S.

N. Li, H. Chen, N. Duan, M. Liu, S. Demiguel, R. Sidhu, A. L. Holmes, and J. C. Campbell, “High power photodiode wafer bonded to Si using Au with improved responsivity and output power,” IEEE Photonics Technol. Lett. 18(23), 2526–2528 (2006).
[Crossref]

Derendorf, K.

K. Derendorf, S. Essig, E. Oliva, V. Klinger, T. Roesener, S. P. Philipps, J. Benick, M. Hermle, M. Schachtner, G. Siefer, W. Jäger, and F. Dimroth, “Fabrication of GaInP/GaAs//Si solar cells by surface activated direct wafer bonding,” IEEE J. Photovolt. 3(4), 1423–1428 (2013).
[Crossref]

Dimroth, F.

K. Derendorf, S. Essig, E. Oliva, V. Klinger, T. Roesener, S. P. Philipps, J. Benick, M. Hermle, M. Schachtner, G. Siefer, W. Jäger, and F. Dimroth, “Fabrication of GaInP/GaAs//Si solar cells by surface activated direct wafer bonding,” IEEE J. Photovolt. 3(4), 1423–1428 (2013).
[Crossref]

Duan, N.

N. Li, H. Chen, N. Duan, M. Liu, S. Demiguel, R. Sidhu, A. L. Holmes, and J. C. Campbell, “High power photodiode wafer bonded to Si using Au with improved responsivity and output power,” IEEE Photonics Technol. Lett. 18(23), 2526–2528 (2006).
[Crossref]

Essig, S.

K. Derendorf, S. Essig, E. Oliva, V. Klinger, T. Roesener, S. P. Philipps, J. Benick, M. Hermle, M. Schachtner, G. Siefer, W. Jäger, and F. Dimroth, “Fabrication of GaInP/GaAs//Si solar cells by surface activated direct wafer bonding,” IEEE J. Photovolt. 3(4), 1423–1428 (2013).
[Crossref]

Fédéli, J. M.

Geum, D. M.

S. H. Kim, M. S. Park, D. M. Geum, H. S. Kim, G. H. Ryu, H. D. Yang, J. D. Song, C. Z. Kim, and W. J. Choi, “Fabrication and characterization of single junction GaAs solar cell epitaxially grown on Si substrate,” Curr. Appl. Phys. (to be published).

Gnauck, A. H.

S. Chandrasekhar, L. M. Lunardi, A. H. Gnauck, R. A. Hamm, and G. J. Qua, “High-speed monolithic p-i-n/HBT and HPT/HBT photoreceivers implemented with Simple Phototransistor Structure,” IEEE Photonics Technol. Lett. 5(11), 1316–1318 (1993).
[Crossref]

Gösele, U.

O. Moutanabbir and U. Gösele, “Heterogeneous integration of compound semiconductors,” Annu. Rev. Mater. Res. 40(1), 469–500 (2010).
[Crossref]

Gutierrez-Aitken, A.

D. W. Scott, C. Monier, S. Wang, V. Radisic, P. Nguyen, A. Cavus, W. R. Deal, and A. Gutierrez-Aitken, “InP HBT transferred to higher thermal conductivity substrate,” IEEE Electron Device Lett. 33(4), 507–509 (2012).
[Crossref]

Hamm, R. A.

S. Chandrasekhar, L. M. Lunardi, A. H. Gnauck, R. A. Hamm, and G. J. Qua, “High-speed monolithic p-i-n/HBT and HPT/HBT photoreceivers implemented with Simple Phototransistor Structure,” IEEE Photonics Technol. Lett. 5(11), 1316–1318 (1993).
[Crossref]

Han, S. J.

C. W. Cheng, K. T. Shiu, N. Li, S. J. Han, L. Shi, and D. K. Sadana, “Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics,” Nat. Commun. 4, 1577 (2013).
[Crossref] [PubMed]

Hartmann, J. M.

Haverkamp, E.

J. J. Schermer, G. J. Bauhuis, P. Mulder, W. J. Meulemeesters, E. Haverkamp, M. M. A. J. Voncken, and P. K. Larsen, “High rate epitaxial lift-off of InGaP films from GaAs substrates,” Appl. Phys. Lett. 76(15), 2131–2133 (2000).
[Crossref]

Hermle, M.

K. Derendorf, S. Essig, E. Oliva, V. Klinger, T. Roesener, S. P. Philipps, J. Benick, M. Hermle, M. Schachtner, G. Siefer, W. Jäger, and F. Dimroth, “Fabrication of GaInP/GaAs//Si solar cells by surface activated direct wafer bonding,” IEEE J. Photovolt. 3(4), 1423–1428 (2013).
[Crossref]

Holmes, A. L.

N. Li, H. Chen, N. Duan, M. Liu, S. Demiguel, R. Sidhu, A. L. Holmes, and J. C. Campbell, “High power photodiode wafer bonded to Si using Au with improved responsivity and output power,” IEEE Photonics Technol. Lett. 18(23), 2526–2528 (2006).
[Crossref]

Hsin, W. M.

C. Y. Liao, K. P. Hsueh, J. Z. Tsai, Y. S. Lee, W. M. Hsin, and Y. M. Hsin, “An AlGaAs/GaAs photo-transistor-based fluorescence detection,” J. Electrochem. Soc. 160(9), B156–B159 (2013).
[Crossref]

Hsin, Y. M.

C. Y. Liao, K. P. Hsueh, J. Z. Tsai, Y. S. Lee, W. M. Hsin, and Y. M. Hsin, “An AlGaAs/GaAs photo-transistor-based fluorescence detection,” J. Electrochem. Soc. 160(9), B156–B159 (2013).
[Crossref]

Hsu, M. K.

W. T. Chen, H. R. Chen, S. Y. Chiu, M. K. Hsu, J. H. Tsai, and W. S. Lour, “Promoted potential of heterojunction phototransistor for low-power photodetection by surface sulfur treatment,” J. Electrochem. Soc. 154(7), H552–H556 (2007).
[Crossref]

Hsueh, K. P.

C. Y. Liao, K. P. Hsueh, J. Z. Tsai, Y. S. Lee, W. M. Hsin, and Y. M. Hsin, “An AlGaAs/GaAs photo-transistor-based fluorescence detection,” J. Electrochem. Soc. 160(9), B156–B159 (2013).
[Crossref]

Hudait, M. K.

M. K. Hudait, P. Modak, and S. B. Krupanidhi, “Si incorporation and Burstein–Moss shift in n-type GaAs,” Math. Sci. Eng. B 60(1), 1–11 (1999).
[Crossref]

Hunter, A.

P. D. Moran, D. Chow, A. Hunter, and T. F. Kuech, “Fabrication of InAs/AlSb/GaSb heterojunction bipolar transistors on Al2O3 substrates by wafer bonding,” Appl. Phys. Lett. 78(15), 2232–2234 (2001).
[Crossref]

Ikeda, K.

Y. Moriyama, K. Ikeda, S. Takeuchi, Y. Kamimuta, Y. Nakamura, K. Izunome, A. Sakai, and T. Tezuka, “Ultrathin-body Ge-on-insulator wafers fabricated with strongly bonded thin Al2O3/SiO2 hybrid buried oxide layers,” Appl. Phys. Express 7(8), 086501 (2014).
[Crossref]

Ikku, Y.

S. H. Kim, Y. Ikku, M. Yokoyama, R. Nakane, J. Li, Y. C. Kao, M. Takenaka, and S. Takagi, “Direct wafer bonding technology for large-scale InGaAs-on-insulator transistors,” Appl. Phys. Lett. 105(4), 043504 (2014).
[Crossref]

Iwamoto, S.

Y. H. Jhang, K. Tanabe, S. Iwamoto, and Y. Arakawa, “InAs/GaAs quantum dot lasers on silicon-on-insulator substrates by metal-strip wafer bonding,” IEEE Photonics Technol. Lett. 27(8), 875–878 (2015).
[Crossref]

Izunome, K.

Y. Moriyama, K. Ikeda, S. Takeuchi, Y. Kamimuta, Y. Nakamura, K. Izunome, A. Sakai, and T. Tezuka, “Ultrathin-body Ge-on-insulator wafers fabricated with strongly bonded thin Al2O3/SiO2 hybrid buried oxide layers,” Appl. Phys. Express 7(8), 086501 (2014).
[Crossref]

Jäger, W.

K. Derendorf, S. Essig, E. Oliva, V. Klinger, T. Roesener, S. P. Philipps, J. Benick, M. Hermle, M. Schachtner, G. Siefer, W. Jäger, and F. Dimroth, “Fabrication of GaInP/GaAs//Si solar cells by surface activated direct wafer bonding,” IEEE J. Photovolt. 3(4), 1423–1428 (2013).
[Crossref]

Jang, J. H.

M. S. Park and J. H. Jang, “Enhancement of optical gain in floating-base InGaP-GaAs heterojunction phototransistors,” IEEE Photonics Technol. Lett. 22(16), 1202–1204 (2010).
[Crossref]

Jhang, Y. H.

Y. H. Jhang, K. Tanabe, S. Iwamoto, and Y. Arakawa, “InAs/GaAs quantum dot lasers on silicon-on-insulator substrates by metal-strip wafer bonding,” IEEE Photonics Technol. Lett. 27(8), 875–878 (2015).
[Crossref]

Jing, E.

E. Jing, B. Xiong, and Y. Wang, “Low-temperature Au-Si wafer bonding,” J. Micromech. Microeng. 20(9), 095014 (2010).
[Crossref]

Kamimuta, Y.

Y. Moriyama, K. Ikeda, S. Takeuchi, Y. Kamimuta, Y. Nakamura, K. Izunome, A. Sakai, and T. Tezuka, “Ultrathin-body Ge-on-insulator wafers fabricated with strongly bonded thin Al2O3/SiO2 hybrid buried oxide layers,” Appl. Phys. Express 7(8), 086501 (2014).
[Crossref]

Kao, Y. C.

S. H. Kim, Y. Ikku, M. Yokoyama, R. Nakane, J. Li, Y. C. Kao, M. Takenaka, and S. Takagi, “Direct wafer bonding technology for large-scale InGaAs-on-insulator transistors,” Appl. Phys. Lett. 105(4), 043504 (2014).
[Crossref]

Kim, C. Z.

S. H. Kim, M. S. Park, D. M. Geum, H. S. Kim, G. H. Ryu, H. D. Yang, J. D. Song, C. Z. Kim, and W. J. Choi, “Fabrication and characterization of single junction GaAs solar cell epitaxially grown on Si substrate,” Curr. Appl. Phys. (to be published).

Kim, H. S.

S. H. Kim, M. S. Park, D. M. Geum, H. S. Kim, G. H. Ryu, H. D. Yang, J. D. Song, C. Z. Kim, and W. J. Choi, “Fabrication and characterization of single junction GaAs solar cell epitaxially grown on Si substrate,” Curr. Appl. Phys. (to be published).

Kim, S. H.

S. H. Kim, Y. Ikku, M. Yokoyama, R. Nakane, J. Li, Y. C. Kao, M. Takenaka, and S. Takagi, “Direct wafer bonding technology for large-scale InGaAs-on-insulator transistors,” Appl. Phys. Lett. 105(4), 043504 (2014).
[Crossref]

S. H. Kim, M. S. Park, D. M. Geum, H. S. Kim, G. H. Ryu, H. D. Yang, J. D. Song, C. Z. Kim, and W. J. Choi, “Fabrication and characterization of single junction GaAs solar cell epitaxially grown on Si substrate,” Curr. Appl. Phys. (to be published).

Klinger, V.

K. Derendorf, S. Essig, E. Oliva, V. Klinger, T. Roesener, S. P. Philipps, J. Benick, M. Hermle, M. Schachtner, G. Siefer, W. Jäger, and F. Dimroth, “Fabrication of GaInP/GaAs//Si solar cells by surface activated direct wafer bonding,” IEEE J. Photovolt. 3(4), 1423–1428 (2013).
[Crossref]

Kopp, C.

Krupanidhi, S. B.

M. K. Hudait, P. Modak, and S. B. Krupanidhi, “Si incorporation and Burstein–Moss shift in n-type GaAs,” Math. Sci. Eng. B 60(1), 1–11 (1999).
[Crossref]

Kuech, T. F.

P. D. Moran, D. Chow, A. Hunter, and T. F. Kuech, “Fabrication of InAs/AlSb/GaSb heterojunction bipolar transistors on Al2O3 substrates by wafer bonding,” Appl. Phys. Lett. 78(15), 2232–2234 (2001).
[Crossref]

Larsen, P. K.

J. J. Schermer, G. J. Bauhuis, P. Mulder, W. J. Meulemeesters, E. Haverkamp, M. M. A. J. Voncken, and P. K. Larsen, “High rate epitaxial lift-off of InGaP films from GaAs substrates,” Appl. Phys. Lett. 76(15), 2131–2133 (2000).
[Crossref]

Lee, M. J.

J. S. Youn, M. J. Lee, K. Y. Park, and W. Y. Choi, “10-Gb/s 850-nm CMOS OEIC receiver with a silicon avalanche photodetector,” IEEE J. Quantum Electron. 48(2), 229–236 (2012).
[Crossref]

Lee, Y. S.

C. Y. Liao, K. P. Hsueh, J. Z. Tsai, Y. S. Lee, W. M. Hsin, and Y. M. Hsin, “An AlGaAs/GaAs photo-transistor-based fluorescence detection,” J. Electrochem. Soc. 160(9), B156–B159 (2013).
[Crossref]

Leys, M.

G. Brammertz, Y. Mols, S. Degroote, V. Motsnyi, M. Leys, G. Borghs, and M. Caymax, “Low-temperature photoluminescence study of thin epitaxial GaAs films on Ge substrates,” J. Appl. Phys. 99(9), 093514 (2006).
[Crossref]

Li, J.

S. H. Kim, Y. Ikku, M. Yokoyama, R. Nakane, J. Li, Y. C. Kao, M. Takenaka, and S. Takagi, “Direct wafer bonding technology for large-scale InGaAs-on-insulator transistors,” Appl. Phys. Lett. 105(4), 043504 (2014).
[Crossref]

Li, N.

C. W. Cheng, K. T. Shiu, N. Li, S. J. Han, L. Shi, and D. K. Sadana, “Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics,” Nat. Commun. 4, 1577 (2013).
[Crossref] [PubMed]

N. Li, H. Chen, N. Duan, M. Liu, S. Demiguel, R. Sidhu, A. L. Holmes, and J. C. Campbell, “High power photodiode wafer bonded to Si using Au with improved responsivity and output power,” IEEE Photonics Technol. Lett. 18(23), 2526–2528 (2006).
[Crossref]

Liao, C. Y.

C. Y. Liao, K. P. Hsueh, J. Z. Tsai, Y. S. Lee, W. M. Hsin, and Y. M. Hsin, “An AlGaAs/GaAs photo-transistor-based fluorescence detection,” J. Electrochem. Soc. 160(9), B156–B159 (2013).
[Crossref]

Liu, M.

N. Li, H. Chen, N. Duan, M. Liu, S. Demiguel, R. Sidhu, A. L. Holmes, and J. C. Campbell, “High power photodiode wafer bonded to Si using Au with improved responsivity and output power,” IEEE Photonics Technol. Lett. 18(23), 2526–2528 (2006).
[Crossref]

Lour, W. S.

W. T. Chen, H. R. Chen, S. Y. Chiu, M. K. Hsu, J. H. Tsai, and W. S. Lour, “Promoted potential of heterojunction phototransistor for low-power photodetection by surface sulfur treatment,” J. Electrochem. Soc. 154(7), H552–H556 (2007).
[Crossref]

Lunardi, L. M.

S. Chandrasekhar, L. M. Lunardi, A. H. Gnauck, R. A. Hamm, and G. J. Qua, “High-speed monolithic p-i-n/HBT and HPT/HBT photoreceivers implemented with Simple Phototransistor Structure,” IEEE Photonics Technol. Lett. 5(11), 1316–1318 (1993).
[Crossref]

Marris-Morini, D.

Meulemeesters, W. J.

J. J. Schermer, G. J. Bauhuis, P. Mulder, W. J. Meulemeesters, E. Haverkamp, M. M. A. J. Voncken, and P. K. Larsen, “High rate epitaxial lift-off of InGaP films from GaAs substrates,” Appl. Phys. Lett. 76(15), 2131–2133 (2000).
[Crossref]

Miyamoto, Y.

Y. Yamaguchi, T. Sagai, and Y. Miyamoto, “Fabrication of InP/InGaAs SHBT on Si substrate by using transferred substrate,” IEICE Trans. Electron. 95(8), 1323–1326 (2012).
[Crossref]

Modak, P.

M. K. Hudait, P. Modak, and S. B. Krupanidhi, “Si incorporation and Burstein–Moss shift in n-type GaAs,” Math. Sci. Eng. B 60(1), 1–11 (1999).
[Crossref]

Mols, Y.

G. Brammertz, Y. Mols, S. Degroote, V. Motsnyi, M. Leys, G. Borghs, and M. Caymax, “Low-temperature photoluminescence study of thin epitaxial GaAs films on Ge substrates,” J. Appl. Phys. 99(9), 093514 (2006).
[Crossref]

Monier, C.

D. W. Scott, C. Monier, S. Wang, V. Radisic, P. Nguyen, A. Cavus, W. R. Deal, and A. Gutierrez-Aitken, “InP HBT transferred to higher thermal conductivity substrate,” IEEE Electron Device Lett. 33(4), 507–509 (2012).
[Crossref]

Moran, P. D.

P. D. Moran, D. Chow, A. Hunter, and T. F. Kuech, “Fabrication of InAs/AlSb/GaSb heterojunction bipolar transistors on Al2O3 substrates by wafer bonding,” Appl. Phys. Lett. 78(15), 2232–2234 (2001).
[Crossref]

Moriyama, Y.

Y. Moriyama, K. Ikeda, S. Takeuchi, Y. Kamimuta, Y. Nakamura, K. Izunome, A. Sakai, and T. Tezuka, “Ultrathin-body Ge-on-insulator wafers fabricated with strongly bonded thin Al2O3/SiO2 hybrid buried oxide layers,” Appl. Phys. Express 7(8), 086501 (2014).
[Crossref]

Motsnyi, V.

G. Brammertz, Y. Mols, S. Degroote, V. Motsnyi, M. Leys, G. Borghs, and M. Caymax, “Low-temperature photoluminescence study of thin epitaxial GaAs films on Ge substrates,” J. Appl. Phys. 99(9), 093514 (2006).
[Crossref]

Moutanabbir, O.

O. Moutanabbir and U. Gösele, “Heterogeneous integration of compound semiconductors,” Annu. Rev. Mater. Res. 40(1), 469–500 (2010).
[Crossref]

Mulder, P.

T. Sogabe, Y. Shoji, P. Mulder, J. Schermer, E. Tamayo, and Y. Okada, “Enhancement of current collection in epitaxial lift-off InAs/GaAs quantum dot thin film solar cell and concentrated photovoltaic study,” Appl. Phys. Lett. 105(11), 113904 (2014).
[Crossref]

J. J. Schermer, G. J. Bauhuis, P. Mulder, W. J. Meulemeesters, E. Haverkamp, M. M. A. J. Voncken, and P. K. Larsen, “High rate epitaxial lift-off of InGaP films from GaAs substrates,” Appl. Phys. Lett. 76(15), 2131–2133 (2000).
[Crossref]

Nakamura, Y.

Y. Moriyama, K. Ikeda, S. Takeuchi, Y. Kamimuta, Y. Nakamura, K. Izunome, A. Sakai, and T. Tezuka, “Ultrathin-body Ge-on-insulator wafers fabricated with strongly bonded thin Al2O3/SiO2 hybrid buried oxide layers,” Appl. Phys. Express 7(8), 086501 (2014).
[Crossref]

Nakane, R.

S. H. Kim, Y. Ikku, M. Yokoyama, R. Nakane, J. Li, Y. C. Kao, M. Takenaka, and S. Takagi, “Direct wafer bonding technology for large-scale InGaAs-on-insulator transistors,” Appl. Phys. Lett. 105(4), 043504 (2014).
[Crossref]

Nguyen, P.

D. W. Scott, C. Monier, S. Wang, V. Radisic, P. Nguyen, A. Cavus, W. R. Deal, and A. Gutierrez-Aitken, “InP HBT transferred to higher thermal conductivity substrate,” IEEE Electron Device Lett. 33(4), 507–509 (2012).
[Crossref]

Okada, Y.

T. Sogabe, Y. Shoji, P. Mulder, J. Schermer, E. Tamayo, and Y. Okada, “Enhancement of current collection in epitaxial lift-off InAs/GaAs quantum dot thin film solar cell and concentrated photovoltaic study,” Appl. Phys. Lett. 105(11), 113904 (2014).
[Crossref]

Oliva, E.

K. Derendorf, S. Essig, E. Oliva, V. Klinger, T. Roesener, S. P. Philipps, J. Benick, M. Hermle, M. Schachtner, G. Siefer, W. Jäger, and F. Dimroth, “Fabrication of GaInP/GaAs//Si solar cells by surface activated direct wafer bonding,” IEEE J. Photovolt. 3(4), 1423–1428 (2013).
[Crossref]

Osmond, J.

Park, K. Y.

J. S. Youn, M. J. Lee, K. Y. Park, and W. Y. Choi, “10-Gb/s 850-nm CMOS OEIC receiver with a silicon avalanche photodetector,” IEEE J. Quantum Electron. 48(2), 229–236 (2012).
[Crossref]

Park, M. S.

M. S. Park and J. H. Jang, “Enhancement of optical gain in floating-base InGaP-GaAs heterojunction phototransistors,” IEEE Photonics Technol. Lett. 22(16), 1202–1204 (2010).
[Crossref]

S. H. Kim, M. S. Park, D. M. Geum, H. S. Kim, G. H. Ryu, H. D. Yang, J. D. Song, C. Z. Kim, and W. J. Choi, “Fabrication and characterization of single junction GaAs solar cell epitaxially grown on Si substrate,” Curr. Appl. Phys. (to be published).

Philipps, S. P.

K. Derendorf, S. Essig, E. Oliva, V. Klinger, T. Roesener, S. P. Philipps, J. Benick, M. Hermle, M. Schachtner, G. Siefer, W. Jäger, and F. Dimroth, “Fabrication of GaInP/GaAs//Si solar cells by surface activated direct wafer bonding,” IEEE J. Photovolt. 3(4), 1423–1428 (2013).
[Crossref]

Polzer, A.

Qua, G. J.

S. Chandrasekhar, L. M. Lunardi, A. H. Gnauck, R. A. Hamm, and G. J. Qua, “High-speed monolithic p-i-n/HBT and HPT/HBT photoreceivers implemented with Simple Phototransistor Structure,” IEEE Photonics Technol. Lett. 5(11), 1316–1318 (1993).
[Crossref]

Radisic, V.

D. W. Scott, C. Monier, S. Wang, V. Radisic, P. Nguyen, A. Cavus, W. R. Deal, and A. Gutierrez-Aitken, “InP HBT transferred to higher thermal conductivity substrate,” IEEE Electron Device Lett. 33(4), 507–509 (2012).
[Crossref]

Roesener, T.

K. Derendorf, S. Essig, E. Oliva, V. Klinger, T. Roesener, S. P. Philipps, J. Benick, M. Hermle, M. Schachtner, G. Siefer, W. Jäger, and F. Dimroth, “Fabrication of GaInP/GaAs//Si solar cells by surface activated direct wafer bonding,” IEEE J. Photovolt. 3(4), 1423–1428 (2013).
[Crossref]

Ryu, G. H.

S. H. Kim, M. S. Park, D. M. Geum, H. S. Kim, G. H. Ryu, H. D. Yang, J. D. Song, C. Z. Kim, and W. J. Choi, “Fabrication and characterization of single junction GaAs solar cell epitaxially grown on Si substrate,” Curr. Appl. Phys. (to be published).

Sadana, D. K.

C. W. Cheng, K. T. Shiu, N. Li, S. J. Han, L. Shi, and D. K. Sadana, “Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics,” Nat. Commun. 4, 1577 (2013).
[Crossref] [PubMed]

Sagai, T.

Y. Yamaguchi, T. Sagai, and Y. Miyamoto, “Fabrication of InP/InGaAs SHBT on Si substrate by using transferred substrate,” IEICE Trans. Electron. 95(8), 1323–1326 (2012).
[Crossref]

Sakai, A.

Y. Moriyama, K. Ikeda, S. Takeuchi, Y. Kamimuta, Y. Nakamura, K. Izunome, A. Sakai, and T. Tezuka, “Ultrathin-body Ge-on-insulator wafers fabricated with strongly bonded thin Al2O3/SiO2 hybrid buried oxide layers,” Appl. Phys. Express 7(8), 086501 (2014).
[Crossref]

Schachtner, M.

K. Derendorf, S. Essig, E. Oliva, V. Klinger, T. Roesener, S. P. Philipps, J. Benick, M. Hermle, M. Schachtner, G. Siefer, W. Jäger, and F. Dimroth, “Fabrication of GaInP/GaAs//Si solar cells by surface activated direct wafer bonding,” IEEE J. Photovolt. 3(4), 1423–1428 (2013).
[Crossref]

Schermer, J.

T. Sogabe, Y. Shoji, P. Mulder, J. Schermer, E. Tamayo, and Y. Okada, “Enhancement of current collection in epitaxial lift-off InAs/GaAs quantum dot thin film solar cell and concentrated photovoltaic study,” Appl. Phys. Lett. 105(11), 113904 (2014).
[Crossref]

Schermer, J. J.

J. J. Schermer, G. J. Bauhuis, P. Mulder, W. J. Meulemeesters, E. Haverkamp, M. M. A. J. Voncken, and P. K. Larsen, “High rate epitaxial lift-off of InGaP films from GaAs substrates,” Appl. Phys. Lett. 76(15), 2131–2133 (2000).
[Crossref]

Scott, D. W.

D. W. Scott, C. Monier, S. Wang, V. Radisic, P. Nguyen, A. Cavus, W. R. Deal, and A. Gutierrez-Aitken, “InP HBT transferred to higher thermal conductivity substrate,” IEEE Electron Device Lett. 33(4), 507–509 (2012).
[Crossref]

Shi, L.

C. W. Cheng, K. T. Shiu, N. Li, S. J. Han, L. Shi, and D. K. Sadana, “Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics,” Nat. Commun. 4, 1577 (2013).
[Crossref] [PubMed]

Shiu, K. T.

C. W. Cheng, K. T. Shiu, N. Li, S. J. Han, L. Shi, and D. K. Sadana, “Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics,” Nat. Commun. 4, 1577 (2013).
[Crossref] [PubMed]

Shoji, Y.

T. Sogabe, Y. Shoji, P. Mulder, J. Schermer, E. Tamayo, and Y. Okada, “Enhancement of current collection in epitaxial lift-off InAs/GaAs quantum dot thin film solar cell and concentrated photovoltaic study,” Appl. Phys. Lett. 105(11), 113904 (2014).
[Crossref]

Sidhu, R.

N. Li, H. Chen, N. Duan, M. Liu, S. Demiguel, R. Sidhu, A. L. Holmes, and J. C. Campbell, “High power photodiode wafer bonded to Si using Au with improved responsivity and output power,” IEEE Photonics Technol. Lett. 18(23), 2526–2528 (2006).
[Crossref]

Siefer, G.

K. Derendorf, S. Essig, E. Oliva, V. Klinger, T. Roesener, S. P. Philipps, J. Benick, M. Hermle, M. Schachtner, G. Siefer, W. Jäger, and F. Dimroth, “Fabrication of GaInP/GaAs//Si solar cells by surface activated direct wafer bonding,” IEEE J. Photovolt. 3(4), 1423–1428 (2013).
[Crossref]

Sogabe, T.

T. Sogabe, Y. Shoji, P. Mulder, J. Schermer, E. Tamayo, and Y. Okada, “Enhancement of current collection in epitaxial lift-off InAs/GaAs quantum dot thin film solar cell and concentrated photovoltaic study,” Appl. Phys. Lett. 105(11), 113904 (2014).
[Crossref]

Song, J. D.

S. H. Kim, M. S. Park, D. M. Geum, H. S. Kim, G. H. Ryu, H. D. Yang, J. D. Song, C. Z. Kim, and W. J. Choi, “Fabrication and characterization of single junction GaAs solar cell epitaxially grown on Si substrate,” Curr. Appl. Phys. (to be published).

Takagi, S.

S. H. Kim, Y. Ikku, M. Yokoyama, R. Nakane, J. Li, Y. C. Kao, M. Takenaka, and S. Takagi, “Direct wafer bonding technology for large-scale InGaAs-on-insulator transistors,” Appl. Phys. Lett. 105(4), 043504 (2014).
[Crossref]

Takenaka, M.

S. H. Kim, Y. Ikku, M. Yokoyama, R. Nakane, J. Li, Y. C. Kao, M. Takenaka, and S. Takagi, “Direct wafer bonding technology for large-scale InGaAs-on-insulator transistors,” Appl. Phys. Lett. 105(4), 043504 (2014).
[Crossref]

Takeuchi, S.

Y. Moriyama, K. Ikeda, S. Takeuchi, Y. Kamimuta, Y. Nakamura, K. Izunome, A. Sakai, and T. Tezuka, “Ultrathin-body Ge-on-insulator wafers fabricated with strongly bonded thin Al2O3/SiO2 hybrid buried oxide layers,” Appl. Phys. Express 7(8), 086501 (2014).
[Crossref]

Tamayo, E.

T. Sogabe, Y. Shoji, P. Mulder, J. Schermer, E. Tamayo, and Y. Okada, “Enhancement of current collection in epitaxial lift-off InAs/GaAs quantum dot thin film solar cell and concentrated photovoltaic study,” Appl. Phys. Lett. 105(11), 113904 (2014).
[Crossref]

Tanabe, K.

Y. H. Jhang, K. Tanabe, S. Iwamoto, and Y. Arakawa, “InAs/GaAs quantum dot lasers on silicon-on-insulator substrates by metal-strip wafer bonding,” IEEE Photonics Technol. Lett. 27(8), 875–878 (2015).
[Crossref]

K. Tanabe, K. Watanabe, and Y. Arakawa, “III-V/Si hybrid photonic devices by direct fusion bonding,” Sci. Rep. 2, 349 (2012).
[Crossref] [PubMed]

Tezuka, T.

Y. Moriyama, K. Ikeda, S. Takeuchi, Y. Kamimuta, Y. Nakamura, K. Izunome, A. Sakai, and T. Tezuka, “Ultrathin-body Ge-on-insulator wafers fabricated with strongly bonded thin Al2O3/SiO2 hybrid buried oxide layers,” Appl. Phys. Express 7(8), 086501 (2014).
[Crossref]

Tsai, J. H.

W. T. Chen, H. R. Chen, S. Y. Chiu, M. K. Hsu, J. H. Tsai, and W. S. Lour, “Promoted potential of heterojunction phototransistor for low-power photodetection by surface sulfur treatment,” J. Electrochem. Soc. 154(7), H552–H556 (2007).
[Crossref]

Tsai, J. Z.

C. Y. Liao, K. P. Hsueh, J. Z. Tsai, Y. S. Lee, W. M. Hsin, and Y. M. Hsin, “An AlGaAs/GaAs photo-transistor-based fluorescence detection,” J. Electrochem. Soc. 160(9), B156–B159 (2013).
[Crossref]

Vivien, L.

Voncken, M. M. A. J.

J. J. Schermer, G. J. Bauhuis, P. Mulder, W. J. Meulemeesters, E. Haverkamp, M. M. A. J. Voncken, and P. K. Larsen, “High rate epitaxial lift-off of InGaP films from GaAs substrates,” Appl. Phys. Lett. 76(15), 2131–2133 (2000).
[Crossref]

Wang, S.

D. W. Scott, C. Monier, S. Wang, V. Radisic, P. Nguyen, A. Cavus, W. R. Deal, and A. Gutierrez-Aitken, “InP HBT transferred to higher thermal conductivity substrate,” IEEE Electron Device Lett. 33(4), 507–509 (2012).
[Crossref]

Wang, Y.

E. Jing, B. Xiong, and Y. Wang, “Low-temperature Au-Si wafer bonding,” J. Micromech. Microeng. 20(9), 095014 (2010).
[Crossref]

Watanabe, K.

K. Tanabe, K. Watanabe, and Y. Arakawa, “III-V/Si hybrid photonic devices by direct fusion bonding,” Sci. Rep. 2, 349 (2012).
[Crossref] [PubMed]

Xiong, B.

E. Jing, B. Xiong, and Y. Wang, “Low-temperature Au-Si wafer bonding,” J. Micromech. Microeng. 20(9), 095014 (2010).
[Crossref]

Yamaguchi, Y.

Y. Yamaguchi, T. Sagai, and Y. Miyamoto, “Fabrication of InP/InGaAs SHBT on Si substrate by using transferred substrate,” IEICE Trans. Electron. 95(8), 1323–1326 (2012).
[Crossref]

Yang, H. D.

S. H. Kim, M. S. Park, D. M. Geum, H. S. Kim, G. H. Ryu, H. D. Yang, J. D. Song, C. Z. Kim, and W. J. Choi, “Fabrication and characterization of single junction GaAs solar cell epitaxially grown on Si substrate,” Curr. Appl. Phys. (to be published).

Yokoyama, M.

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Figures (6)

Fig. 1
Fig. 1 (a) Schematic of fabrication of an InGaP/GaAs HPT on Si substrate utilizing the MWB and ELO process. (b) Cross-sectional SEM image of the interface of the Pt/Au alloy between the device epitaxial layer and Si.
Fig. 2
Fig. 2 Surface AFM images during the device fabrication sequence: (a) Surface of the deposited Pt/Au double layer on the Si wafer. (b) Surface of the fabricated HPT on the Si wafer after the MWB and ELO process. (c) Surface of the HPT on the Si wafer after the RTA process. AFM was operated in contact mode and the scan area is 1 × 5 μm2.
Fig. 3
Fig. 3 HRXRD rocking curves obtained with (004) reflection for the as-grown HPT on GaAs substrate and the HPT transferred onto Si substrate.
Fig. 4
Fig. 4 13 K LTPL spectra of the bonded HPT film on Si and the as-grown HPT on GaAs substrate. The PL spectrum was obtained using a visible-PMT detector with about 3.5 mW optical pumping through a 532 nm diode-pumped solid-state laser at room temperature.
Fig. 5
Fig. 5 Collector dark current (ICdark) and collector photocurrent (ICph) as a function of VCE for the bonded two-terminal HPT. Here, ICph was measured under different illumination powers of 10, 50, 100, 250, 500 nW and 1.28 μW.
Fig. 6
Fig. 6 Optical gain (Gopt) with respect to incidental optical power at VCE = 0.5, 1.0, 1.5, and 2.0 V. The Gopt was calculated using Eq. (1).

Equations (1)

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G opt = hυΔ I c q P in

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