Abstract

Excimer (ultraviolet) laser-induced quantum well intermixing (UV-Laser-QWI) is an attractive technique for wafer level post-growth processing and fabrication of a variety of monolithically integrated photonic devices. The results of UV-Laser-QWI employed for the fabrication of multibandgap III–V semiconductor wafers have demonstrated the attractive character of this approach although the process accuracy and reproducibility have remained relatively weakly covered in related literature. We report on a systematic investigation of the reproducibility of this process induced with a KrF excimer laser. The influence of both the irradiation with different laser doses and the annealing temperatures on the amplitude of intermixing in InGaAs/InGaAsP/InP quantum well heterostructures has been evaluated based on the photoluminescence measurements. Under optimized conditions, the process allows to blue shift the bandgap of a heterostructure by more than 100 nm with a remarkable 5.3% relative standard deviation.

© 2015 Optical Society of America

Full Article  |  PDF Article
OSA Recommended Articles
Iterative bandgap engineering at selected areas of quantum semiconductor wafers

Radoslaw Stanowski, Matthieu Martin, Richard Ares, and Jan J. Dubowski
Opt. Express 17(22) 19842-19847 (2009)

Supercritical fluid-enhanced IFVD quantum well intermixing for the regrowth-free photonic integration of EAM and SOA

Yang-Jeng Chen, Rih-You Chen, Chih-Cheng Shiu, Wen-Kuan Hsu, Wei-Chen Lin, Yu-Hung Lin, Ting-Chang Chang, and Yi-Jen Chiu
Opt. Mater. Express 8(9) 2592-2599 (2018)

Carrier-induced fast wavelength switching in tunable V-cavity laser with quantum well intermixed tuning section

Xin Zhang, Jian-Jun He, Neng Liu, and Jan J. Dubowski
Opt. Express 23(20) 26336-26341 (2015)

References

  • View by:
  • |
  • |
  • |

  1. H. Soda, M. Furutsu, K. Sato, N. Okazaki, S. Yamazaki, H. Nishimoto, and H. Ishikawa, “High-power and high-speed semi-insulating BH structure monolithic electroabsorption modulator/DFB laser light source,” Electron. Lett. 26(1), 9–10 (1990).
    [Crossref]
  2. F. Kish, R. Nagarajan, D. Welch, P. Evans, J. Rossi, J. Pleumeekers, A. Dentai, M. Kato, S. Corzine, R. Muthiah, M. Ziari, R. Schneider, M. Reffle, T. Butrie, D. Lambert, M. Missey, V. Lal, M. Fisher, S. Murthy, R. Salvatore, S. Demars, A. James, and C. Joyner, “From Visible Light-Emitting Diodes to Large-Scale III-V Photonic Integrated Circuits,” Proc. IEEE 101(10), 2255–2270 (2013).
    [Crossref]
  3. A. Talneau, D. Rondi, M. Krakowski, and R. Blondeau, “Very low threshold operation of 1.52 um GaInAsP/InP DFB buried ridge structure laser diodes entirely grown by MOCVD,” Electron. Lett. 24(10), 609–611 (1988).
    [Crossref]
  4. P. J. Williams, P. M. Charles, I. Griffith, I. Considine, and A. C. Carter, “High performance buried ridge DFB lasers monolithically integrated with butt coupled strip loaded passive waveguides for OEIC,” Electron. Lett. 26(2), 142–143 (1990).
    [Crossref]
  5. C. A. Verschuren, P. J. Harmsma, Y. S. Oei, M. R. Leys, H. Vonk, and J. H. Wolter, “Butt-coupling loss of 0.1dB/interface in InP/InGaAs MQW waveguide-waveguide structures grown by selective area chemical beam epitaxy,” J. Cryst. Growth 188(1-4), 288–294 (1998).
    [Crossref]
  6. M. Gibbon, J. P. Stagg, C. G. Cureton, E. J. Thrush, C. J. Jones, R. E. Mallard, R. E. Pritchards, N. Collis, and A. Chew, “Selective-area low-pressure MOCVD of GaInAsP and related materials on planar InP substrates,” Semicond. Sci. Technol. 8(6), 998–1010 (1993).
    [Crossref]
  7. J. J. Coleman, R. M. Lammert, M. L. Osowski, and A. M. Jones, “Progress in InGaAs - GaAs Selective-Area MOCVD Toward Photonic Integrated Circuits,” IEEE J. Sel. Top. Quant. 3(3), 874–884 (1997).
    [Crossref]
  8. M. J. R. Heck, J. F. Bauters, M. L. Davenport, J. K. Doylend, S. Jain, G. Kurczveil, S. Srinivasan, Y. Tang, and J. E. Bowers, “Hybrid Silicon Photonic Integrated Circuit Technology,” IEEE J. Sel. Top. Quant. 19(4), 6100117 (2013).
    [Crossref]
  9. H.-H. Chang, Y. H. Kuo, R. Jones, A. Barkai, and J. E. Bowers, “Integrated hybrid silicon triplexer,” Opt. Express 18(23), 23891–23899 (2010).
    [Crossref] [PubMed]
  10. S. R. Jain, M. N. Sysak, G. Kurczveil, and J. E. Bowers, “Integrated hybrid silicon DFB laser-EAM array using quantum well intermixing,” Opt. Express 19(14), 13692–13699 (2011).
    [Crossref] [PubMed]
  11. H. Li, Semiconductor Quantum Wells Intermixing (Gordon and Breach Science Publishers, 2000).
  12. W. D. Laidig, N. Holonyak, M. D. Camaras, K. Hess, J. J. Coleman, P. D. Dapkus, and J. Bardeen, “Disorder of an AlAs-GaAs superlattice by impurity diffusion,” Appl. Phys. Lett. 38(10), 776 (1981).
    [Crossref]
  13. J. H. Marsh, “Quantum well intermixing,” Semicond. Sci. Technol. 8(6), 1136–1155 (1993).
    [Crossref]
  14. R. Stanowski, M. Martin, R. Ares, and J. J. Dubowski, “Iterative bandgap engineering at selected areas of quantum semiconductor wafers,” Opt. Express 17(22), 19842–19847 (2009).
    [Crossref] [PubMed]
  15. C. J. McLean, J. H. Marsh, R. M. De La Rue, A. C. Bryce, B. Garrett, and R. W. Glew, “Layer selective disordering by photoabsorption-induced thermal diffusion in InGaAs/InP based multiquantum well structures,” Electron. Lett. 28(12), 1117–1119 (1992).
    [Crossref]
  16. H. S. Djie and T. Mei, “Plasma-induced quantum well intermixing for monolithic photonic integration,” IEEE J. Sel. Top. Quant. 11(2), 373–382 (2005).
    [Crossref]
  17. V. Aimez, J. Beauvais, J. Beerens, D. Morris, H. S. Lim, and Boon-Siew Ooi, “Low-Energy Ion-Implantation-Induced Quantum-Well Intermixing,” IEEE J. Sel. Top. Quant. 8(4), 870–879 (2002).
    [Crossref]
  18. S. C. Du, L. Fu, H. H. Tan, and C. Jagadish, “Investigation of ion implantation induced intermixing in InP based quaternary quantum wells,” J. Phys. D Appl. Phys. 44(47), 475105 (2011).
    [Crossref]
  19. B. S. Ooi, C. J. Hamilton, K. McIlvaney, A. C. Bryce, R. M. De La Rue, J. H. Marsh, and J. S. Roberts, “Quantum- Well Intermixing in GaAs-AlGaAs Structures Using Pulsed Laser Irradiation,” IEEE Photonic. Tech. L. 9(5), 587–589 (1997).
    [Crossref]
  20. A. McKee, C. J. McLean, G. Lullo, A. C. Bryce, R. M. De La Rue, J. H. Marsh, and C. C. Button, “Monolithic integration in InGaAs-InGaAsP multiple-quantum-well structures using laser intermixing,” IEEE J. Quantum Electron. 33(1), 45–55 (1997).
    [Crossref]
  21. K. Brunner, U. Bockelmann, G. Abstreiter, M. Walther, G. Böhm, G. Tränkle, and G. Weimann, “Photoluminescence from a Single GaAs/AlGaAs Quantum Dot,” Phys. Rev. Lett. 69(22), 3216–3219 (1992).
    [Crossref] [PubMed]
  22. J. Genest, J. J. J. Dubowski, V. Aimez, N. Pauc, D. Drouin, and M. Post, “UV laser controlled quantum well intermixing in InAlGaAs/GaAs heterostructures,” J. Phys. Conf. Ser. 59, 605–609 (2007).
    [Crossref]
  23. J. Genest, R. Beal, V. Aimez, and J. J. Dubowski, “ArF laser-based quantum well intermixing in InGaAs/InGaAsP heterostructures,” Appl. Phys. Lett. 93(7), 071106 (2008).
    [Crossref]
  24. N. Liu, S. Poulin, and J. J. Dubowski, “Enhanced photoluminescence emission from bandgap shifted InGaAs/InGaAsP/InP microstructures processed with UV laser quantum well intermixing,” J. Phys. D Appl. Phys. 46(44), 445103 (2013).
    [Crossref]
  25. N. Liu and J. J. Dubowski, “Chemical evolution of InP/InGaAs/InGaAsP microstructures irradiated in air and deionized water with ArF and KrF lasers,” Appl. Surf. Sci. 270, 16–24 (2013).
    [Crossref]
  26. M. Kaleem, X. Zhang, Y. Zhuang, J.-J. He, N. Liu, and J. J. Dubowski, “UV laser induced selective-area bandgap engineering for fabrication of InGaAsP/InP laser devices,” Opt. Laser Technol. 51, 36–42 (2013).
    [Crossref]
  27. M. Kaleem, X. Zhang, Y.-G. Yang, Y. Zhuang, and J. J. He, “Multi-bandgap photonic materials and devices fabricated by UV-laser induced quantum well intermixing,” Optoelectronics Lett. 9(5), 358–361 (2013).
    [Crossref]
  28. J. E. Haysom, Quantum Well Intermixing of InGaAs(P)/InP Heterostructures (2001).
  29. N. Itoh and A. M. Stoneham, “Treatment of semiconductor surfaces by laser-induced electronic excitation,” J. Phys. Condens. Matter 13, R489–R503 (2001).
  30. S. Charbonneau, E. S. Koteles, P. J. Poole, J. J. He, G. C. Aers, J. Haysom, M. Buchanan, Y. Feng, A. Delage, F. Yang, M. Davies, R. D. Goldberg, P. G. Piva, and I. V. Mitchell, “Photonic integrated circuits fabricated using ion implantation,” IEEE J. Sel Top Quant 4(4), 772–793 (1998).
    [Crossref]
  31. J. Kanasaki, A. Okano, K. Ishikawa, Y. Nakai, and N. Itoh, “Defect-Initiated Emission of Ga Atoms from the Gaas (110) Surface-Induced by Pulsed-Laser Irradiation,” J. Phys. Condens. Matter 5(36), 6497–6506 (1993).
    [Crossref]

2013 (6)

F. Kish, R. Nagarajan, D. Welch, P. Evans, J. Rossi, J. Pleumeekers, A. Dentai, M. Kato, S. Corzine, R. Muthiah, M. Ziari, R. Schneider, M. Reffle, T. Butrie, D. Lambert, M. Missey, V. Lal, M. Fisher, S. Murthy, R. Salvatore, S. Demars, A. James, and C. Joyner, “From Visible Light-Emitting Diodes to Large-Scale III-V Photonic Integrated Circuits,” Proc. IEEE 101(10), 2255–2270 (2013).
[Crossref]

M. J. R. Heck, J. F. Bauters, M. L. Davenport, J. K. Doylend, S. Jain, G. Kurczveil, S. Srinivasan, Y. Tang, and J. E. Bowers, “Hybrid Silicon Photonic Integrated Circuit Technology,” IEEE J. Sel. Top. Quant. 19(4), 6100117 (2013).
[Crossref]

N. Liu, S. Poulin, and J. J. Dubowski, “Enhanced photoluminescence emission from bandgap shifted InGaAs/InGaAsP/InP microstructures processed with UV laser quantum well intermixing,” J. Phys. D Appl. Phys. 46(44), 445103 (2013).
[Crossref]

N. Liu and J. J. Dubowski, “Chemical evolution of InP/InGaAs/InGaAsP microstructures irradiated in air and deionized water with ArF and KrF lasers,” Appl. Surf. Sci. 270, 16–24 (2013).
[Crossref]

M. Kaleem, X. Zhang, Y. Zhuang, J.-J. He, N. Liu, and J. J. Dubowski, “UV laser induced selective-area bandgap engineering for fabrication of InGaAsP/InP laser devices,” Opt. Laser Technol. 51, 36–42 (2013).
[Crossref]

M. Kaleem, X. Zhang, Y.-G. Yang, Y. Zhuang, and J. J. He, “Multi-bandgap photonic materials and devices fabricated by UV-laser induced quantum well intermixing,” Optoelectronics Lett. 9(5), 358–361 (2013).
[Crossref]

2011 (2)

S. C. Du, L. Fu, H. H. Tan, and C. Jagadish, “Investigation of ion implantation induced intermixing in InP based quaternary quantum wells,” J. Phys. D Appl. Phys. 44(47), 475105 (2011).
[Crossref]

S. R. Jain, M. N. Sysak, G. Kurczveil, and J. E. Bowers, “Integrated hybrid silicon DFB laser-EAM array using quantum well intermixing,” Opt. Express 19(14), 13692–13699 (2011).
[Crossref] [PubMed]

2010 (1)

2009 (1)

2008 (1)

J. Genest, R. Beal, V. Aimez, and J. J. Dubowski, “ArF laser-based quantum well intermixing in InGaAs/InGaAsP heterostructures,” Appl. Phys. Lett. 93(7), 071106 (2008).
[Crossref]

2007 (1)

J. Genest, J. J. J. Dubowski, V. Aimez, N. Pauc, D. Drouin, and M. Post, “UV laser controlled quantum well intermixing in InAlGaAs/GaAs heterostructures,” J. Phys. Conf. Ser. 59, 605–609 (2007).
[Crossref]

2005 (1)

H. S. Djie and T. Mei, “Plasma-induced quantum well intermixing for monolithic photonic integration,” IEEE J. Sel. Top. Quant. 11(2), 373–382 (2005).
[Crossref]

2002 (1)

V. Aimez, J. Beauvais, J. Beerens, D. Morris, H. S. Lim, and Boon-Siew Ooi, “Low-Energy Ion-Implantation-Induced Quantum-Well Intermixing,” IEEE J. Sel. Top. Quant. 8(4), 870–879 (2002).
[Crossref]

2001 (1)

N. Itoh and A. M. Stoneham, “Treatment of semiconductor surfaces by laser-induced electronic excitation,” J. Phys. Condens. Matter 13, R489–R503 (2001).

1998 (2)

S. Charbonneau, E. S. Koteles, P. J. Poole, J. J. He, G. C. Aers, J. Haysom, M. Buchanan, Y. Feng, A. Delage, F. Yang, M. Davies, R. D. Goldberg, P. G. Piva, and I. V. Mitchell, “Photonic integrated circuits fabricated using ion implantation,” IEEE J. Sel Top Quant 4(4), 772–793 (1998).
[Crossref]

C. A. Verschuren, P. J. Harmsma, Y. S. Oei, M. R. Leys, H. Vonk, and J. H. Wolter, “Butt-coupling loss of 0.1dB/interface in InP/InGaAs MQW waveguide-waveguide structures grown by selective area chemical beam epitaxy,” J. Cryst. Growth 188(1-4), 288–294 (1998).
[Crossref]

1997 (3)

J. J. Coleman, R. M. Lammert, M. L. Osowski, and A. M. Jones, “Progress in InGaAs - GaAs Selective-Area MOCVD Toward Photonic Integrated Circuits,” IEEE J. Sel. Top. Quant. 3(3), 874–884 (1997).
[Crossref]

B. S. Ooi, C. J. Hamilton, K. McIlvaney, A. C. Bryce, R. M. De La Rue, J. H. Marsh, and J. S. Roberts, “Quantum- Well Intermixing in GaAs-AlGaAs Structures Using Pulsed Laser Irradiation,” IEEE Photonic. Tech. L. 9(5), 587–589 (1997).
[Crossref]

A. McKee, C. J. McLean, G. Lullo, A. C. Bryce, R. M. De La Rue, J. H. Marsh, and C. C. Button, “Monolithic integration in InGaAs-InGaAsP multiple-quantum-well structures using laser intermixing,” IEEE J. Quantum Electron. 33(1), 45–55 (1997).
[Crossref]

1993 (3)

J. Kanasaki, A. Okano, K. Ishikawa, Y. Nakai, and N. Itoh, “Defect-Initiated Emission of Ga Atoms from the Gaas (110) Surface-Induced by Pulsed-Laser Irradiation,” J. Phys. Condens. Matter 5(36), 6497–6506 (1993).
[Crossref]

J. H. Marsh, “Quantum well intermixing,” Semicond. Sci. Technol. 8(6), 1136–1155 (1993).
[Crossref]

M. Gibbon, J. P. Stagg, C. G. Cureton, E. J. Thrush, C. J. Jones, R. E. Mallard, R. E. Pritchards, N. Collis, and A. Chew, “Selective-area low-pressure MOCVD of GaInAsP and related materials on planar InP substrates,” Semicond. Sci. Technol. 8(6), 998–1010 (1993).
[Crossref]

1992 (2)

C. J. McLean, J. H. Marsh, R. M. De La Rue, A. C. Bryce, B. Garrett, and R. W. Glew, “Layer selective disordering by photoabsorption-induced thermal diffusion in InGaAs/InP based multiquantum well structures,” Electron. Lett. 28(12), 1117–1119 (1992).
[Crossref]

K. Brunner, U. Bockelmann, G. Abstreiter, M. Walther, G. Böhm, G. Tränkle, and G. Weimann, “Photoluminescence from a Single GaAs/AlGaAs Quantum Dot,” Phys. Rev. Lett. 69(22), 3216–3219 (1992).
[Crossref] [PubMed]

1990 (2)

H. Soda, M. Furutsu, K. Sato, N. Okazaki, S. Yamazaki, H. Nishimoto, and H. Ishikawa, “High-power and high-speed semi-insulating BH structure monolithic electroabsorption modulator/DFB laser light source,” Electron. Lett. 26(1), 9–10 (1990).
[Crossref]

P. J. Williams, P. M. Charles, I. Griffith, I. Considine, and A. C. Carter, “High performance buried ridge DFB lasers monolithically integrated with butt coupled strip loaded passive waveguides for OEIC,” Electron. Lett. 26(2), 142–143 (1990).
[Crossref]

1988 (1)

A. Talneau, D. Rondi, M. Krakowski, and R. Blondeau, “Very low threshold operation of 1.52 um GaInAsP/InP DFB buried ridge structure laser diodes entirely grown by MOCVD,” Electron. Lett. 24(10), 609–611 (1988).
[Crossref]

1981 (1)

W. D. Laidig, N. Holonyak, M. D. Camaras, K. Hess, J. J. Coleman, P. D. Dapkus, and J. Bardeen, “Disorder of an AlAs-GaAs superlattice by impurity diffusion,” Appl. Phys. Lett. 38(10), 776 (1981).
[Crossref]

Abstreiter, G.

K. Brunner, U. Bockelmann, G. Abstreiter, M. Walther, G. Böhm, G. Tränkle, and G. Weimann, “Photoluminescence from a Single GaAs/AlGaAs Quantum Dot,” Phys. Rev. Lett. 69(22), 3216–3219 (1992).
[Crossref] [PubMed]

Aers, G. C.

S. Charbonneau, E. S. Koteles, P. J. Poole, J. J. He, G. C. Aers, J. Haysom, M. Buchanan, Y. Feng, A. Delage, F. Yang, M. Davies, R. D. Goldberg, P. G. Piva, and I. V. Mitchell, “Photonic integrated circuits fabricated using ion implantation,” IEEE J. Sel Top Quant 4(4), 772–793 (1998).
[Crossref]

Aimez, V.

J. Genest, R. Beal, V. Aimez, and J. J. Dubowski, “ArF laser-based quantum well intermixing in InGaAs/InGaAsP heterostructures,” Appl. Phys. Lett. 93(7), 071106 (2008).
[Crossref]

J. Genest, J. J. J. Dubowski, V. Aimez, N. Pauc, D. Drouin, and M. Post, “UV laser controlled quantum well intermixing in InAlGaAs/GaAs heterostructures,” J. Phys. Conf. Ser. 59, 605–609 (2007).
[Crossref]

V. Aimez, J. Beauvais, J. Beerens, D. Morris, H. S. Lim, and Boon-Siew Ooi, “Low-Energy Ion-Implantation-Induced Quantum-Well Intermixing,” IEEE J. Sel. Top. Quant. 8(4), 870–879 (2002).
[Crossref]

Ares, R.

Bardeen, J.

W. D. Laidig, N. Holonyak, M. D. Camaras, K. Hess, J. J. Coleman, P. D. Dapkus, and J. Bardeen, “Disorder of an AlAs-GaAs superlattice by impurity diffusion,” Appl. Phys. Lett. 38(10), 776 (1981).
[Crossref]

Barkai, A.

Bauters, J. F.

M. J. R. Heck, J. F. Bauters, M. L. Davenport, J. K. Doylend, S. Jain, G. Kurczveil, S. Srinivasan, Y. Tang, and J. E. Bowers, “Hybrid Silicon Photonic Integrated Circuit Technology,” IEEE J. Sel. Top. Quant. 19(4), 6100117 (2013).
[Crossref]

Beal, R.

J. Genest, R. Beal, V. Aimez, and J. J. Dubowski, “ArF laser-based quantum well intermixing in InGaAs/InGaAsP heterostructures,” Appl. Phys. Lett. 93(7), 071106 (2008).
[Crossref]

Beauvais, J.

V. Aimez, J. Beauvais, J. Beerens, D. Morris, H. S. Lim, and Boon-Siew Ooi, “Low-Energy Ion-Implantation-Induced Quantum-Well Intermixing,” IEEE J. Sel. Top. Quant. 8(4), 870–879 (2002).
[Crossref]

Beerens, J.

V. Aimez, J. Beauvais, J. Beerens, D. Morris, H. S. Lim, and Boon-Siew Ooi, “Low-Energy Ion-Implantation-Induced Quantum-Well Intermixing,” IEEE J. Sel. Top. Quant. 8(4), 870–879 (2002).
[Crossref]

Blondeau, R.

A. Talneau, D. Rondi, M. Krakowski, and R. Blondeau, “Very low threshold operation of 1.52 um GaInAsP/InP DFB buried ridge structure laser diodes entirely grown by MOCVD,” Electron. Lett. 24(10), 609–611 (1988).
[Crossref]

Bockelmann, U.

K. Brunner, U. Bockelmann, G. Abstreiter, M. Walther, G. Böhm, G. Tränkle, and G. Weimann, “Photoluminescence from a Single GaAs/AlGaAs Quantum Dot,” Phys. Rev. Lett. 69(22), 3216–3219 (1992).
[Crossref] [PubMed]

Böhm, G.

K. Brunner, U. Bockelmann, G. Abstreiter, M. Walther, G. Böhm, G. Tränkle, and G. Weimann, “Photoluminescence from a Single GaAs/AlGaAs Quantum Dot,” Phys. Rev. Lett. 69(22), 3216–3219 (1992).
[Crossref] [PubMed]

Boon-Siew Ooi,

V. Aimez, J. Beauvais, J. Beerens, D. Morris, H. S. Lim, and Boon-Siew Ooi, “Low-Energy Ion-Implantation-Induced Quantum-Well Intermixing,” IEEE J. Sel. Top. Quant. 8(4), 870–879 (2002).
[Crossref]

Bowers, J. E.

Brunner, K.

K. Brunner, U. Bockelmann, G. Abstreiter, M. Walther, G. Böhm, G. Tränkle, and G. Weimann, “Photoluminescence from a Single GaAs/AlGaAs Quantum Dot,” Phys. Rev. Lett. 69(22), 3216–3219 (1992).
[Crossref] [PubMed]

Bryce, A. C.

B. S. Ooi, C. J. Hamilton, K. McIlvaney, A. C. Bryce, R. M. De La Rue, J. H. Marsh, and J. S. Roberts, “Quantum- Well Intermixing in GaAs-AlGaAs Structures Using Pulsed Laser Irradiation,” IEEE Photonic. Tech. L. 9(5), 587–589 (1997).
[Crossref]

A. McKee, C. J. McLean, G. Lullo, A. C. Bryce, R. M. De La Rue, J. H. Marsh, and C. C. Button, “Monolithic integration in InGaAs-InGaAsP multiple-quantum-well structures using laser intermixing,” IEEE J. Quantum Electron. 33(1), 45–55 (1997).
[Crossref]

C. J. McLean, J. H. Marsh, R. M. De La Rue, A. C. Bryce, B. Garrett, and R. W. Glew, “Layer selective disordering by photoabsorption-induced thermal diffusion in InGaAs/InP based multiquantum well structures,” Electron. Lett. 28(12), 1117–1119 (1992).
[Crossref]

Buchanan, M.

S. Charbonneau, E. S. Koteles, P. J. Poole, J. J. He, G. C. Aers, J. Haysom, M. Buchanan, Y. Feng, A. Delage, F. Yang, M. Davies, R. D. Goldberg, P. G. Piva, and I. V. Mitchell, “Photonic integrated circuits fabricated using ion implantation,” IEEE J. Sel Top Quant 4(4), 772–793 (1998).
[Crossref]

Butrie, T.

F. Kish, R. Nagarajan, D. Welch, P. Evans, J. Rossi, J. Pleumeekers, A. Dentai, M. Kato, S. Corzine, R. Muthiah, M. Ziari, R. Schneider, M. Reffle, T. Butrie, D. Lambert, M. Missey, V. Lal, M. Fisher, S. Murthy, R. Salvatore, S. Demars, A. James, and C. Joyner, “From Visible Light-Emitting Diodes to Large-Scale III-V Photonic Integrated Circuits,” Proc. IEEE 101(10), 2255–2270 (2013).
[Crossref]

Button, C. C.

A. McKee, C. J. McLean, G. Lullo, A. C. Bryce, R. M. De La Rue, J. H. Marsh, and C. C. Button, “Monolithic integration in InGaAs-InGaAsP multiple-quantum-well structures using laser intermixing,” IEEE J. Quantum Electron. 33(1), 45–55 (1997).
[Crossref]

Camaras, M. D.

W. D. Laidig, N. Holonyak, M. D. Camaras, K. Hess, J. J. Coleman, P. D. Dapkus, and J. Bardeen, “Disorder of an AlAs-GaAs superlattice by impurity diffusion,” Appl. Phys. Lett. 38(10), 776 (1981).
[Crossref]

Carter, A. C.

P. J. Williams, P. M. Charles, I. Griffith, I. Considine, and A. C. Carter, “High performance buried ridge DFB lasers monolithically integrated with butt coupled strip loaded passive waveguides for OEIC,” Electron. Lett. 26(2), 142–143 (1990).
[Crossref]

Chang, H.-H.

Charbonneau, S.

S. Charbonneau, E. S. Koteles, P. J. Poole, J. J. He, G. C. Aers, J. Haysom, M. Buchanan, Y. Feng, A. Delage, F. Yang, M. Davies, R. D. Goldberg, P. G. Piva, and I. V. Mitchell, “Photonic integrated circuits fabricated using ion implantation,” IEEE J. Sel Top Quant 4(4), 772–793 (1998).
[Crossref]

Charles, P. M.

P. J. Williams, P. M. Charles, I. Griffith, I. Considine, and A. C. Carter, “High performance buried ridge DFB lasers monolithically integrated with butt coupled strip loaded passive waveguides for OEIC,” Electron. Lett. 26(2), 142–143 (1990).
[Crossref]

Chew, A.

M. Gibbon, J. P. Stagg, C. G. Cureton, E. J. Thrush, C. J. Jones, R. E. Mallard, R. E. Pritchards, N. Collis, and A. Chew, “Selective-area low-pressure MOCVD of GaInAsP and related materials on planar InP substrates,” Semicond. Sci. Technol. 8(6), 998–1010 (1993).
[Crossref]

Coleman, J. J.

J. J. Coleman, R. M. Lammert, M. L. Osowski, and A. M. Jones, “Progress in InGaAs - GaAs Selective-Area MOCVD Toward Photonic Integrated Circuits,” IEEE J. Sel. Top. Quant. 3(3), 874–884 (1997).
[Crossref]

W. D. Laidig, N. Holonyak, M. D. Camaras, K. Hess, J. J. Coleman, P. D. Dapkus, and J. Bardeen, “Disorder of an AlAs-GaAs superlattice by impurity diffusion,” Appl. Phys. Lett. 38(10), 776 (1981).
[Crossref]

Collis, N.

M. Gibbon, J. P. Stagg, C. G. Cureton, E. J. Thrush, C. J. Jones, R. E. Mallard, R. E. Pritchards, N. Collis, and A. Chew, “Selective-area low-pressure MOCVD of GaInAsP and related materials on planar InP substrates,” Semicond. Sci. Technol. 8(6), 998–1010 (1993).
[Crossref]

Considine, I.

P. J. Williams, P. M. Charles, I. Griffith, I. Considine, and A. C. Carter, “High performance buried ridge DFB lasers monolithically integrated with butt coupled strip loaded passive waveguides for OEIC,” Electron. Lett. 26(2), 142–143 (1990).
[Crossref]

Corzine, S.

F. Kish, R. Nagarajan, D. Welch, P. Evans, J. Rossi, J. Pleumeekers, A. Dentai, M. Kato, S. Corzine, R. Muthiah, M. Ziari, R. Schneider, M. Reffle, T. Butrie, D. Lambert, M. Missey, V. Lal, M. Fisher, S. Murthy, R. Salvatore, S. Demars, A. James, and C. Joyner, “From Visible Light-Emitting Diodes to Large-Scale III-V Photonic Integrated Circuits,” Proc. IEEE 101(10), 2255–2270 (2013).
[Crossref]

Cureton, C. G.

M. Gibbon, J. P. Stagg, C. G. Cureton, E. J. Thrush, C. J. Jones, R. E. Mallard, R. E. Pritchards, N. Collis, and A. Chew, “Selective-area low-pressure MOCVD of GaInAsP and related materials on planar InP substrates,” Semicond. Sci. Technol. 8(6), 998–1010 (1993).
[Crossref]

Dapkus, P. D.

W. D. Laidig, N. Holonyak, M. D. Camaras, K. Hess, J. J. Coleman, P. D. Dapkus, and J. Bardeen, “Disorder of an AlAs-GaAs superlattice by impurity diffusion,” Appl. Phys. Lett. 38(10), 776 (1981).
[Crossref]

Davenport, M. L.

M. J. R. Heck, J. F. Bauters, M. L. Davenport, J. K. Doylend, S. Jain, G. Kurczveil, S. Srinivasan, Y. Tang, and J. E. Bowers, “Hybrid Silicon Photonic Integrated Circuit Technology,” IEEE J. Sel. Top. Quant. 19(4), 6100117 (2013).
[Crossref]

Davies, M.

S. Charbonneau, E. S. Koteles, P. J. Poole, J. J. He, G. C. Aers, J. Haysom, M. Buchanan, Y. Feng, A. Delage, F. Yang, M. Davies, R. D. Goldberg, P. G. Piva, and I. V. Mitchell, “Photonic integrated circuits fabricated using ion implantation,” IEEE J. Sel Top Quant 4(4), 772–793 (1998).
[Crossref]

De La Rue, R. M.

A. McKee, C. J. McLean, G. Lullo, A. C. Bryce, R. M. De La Rue, J. H. Marsh, and C. C. Button, “Monolithic integration in InGaAs-InGaAsP multiple-quantum-well structures using laser intermixing,” IEEE J. Quantum Electron. 33(1), 45–55 (1997).
[Crossref]

B. S. Ooi, C. J. Hamilton, K. McIlvaney, A. C. Bryce, R. M. De La Rue, J. H. Marsh, and J. S. Roberts, “Quantum- Well Intermixing in GaAs-AlGaAs Structures Using Pulsed Laser Irradiation,” IEEE Photonic. Tech. L. 9(5), 587–589 (1997).
[Crossref]

C. J. McLean, J. H. Marsh, R. M. De La Rue, A. C. Bryce, B. Garrett, and R. W. Glew, “Layer selective disordering by photoabsorption-induced thermal diffusion in InGaAs/InP based multiquantum well structures,” Electron. Lett. 28(12), 1117–1119 (1992).
[Crossref]

Delage, A.

S. Charbonneau, E. S. Koteles, P. J. Poole, J. J. He, G. C. Aers, J. Haysom, M. Buchanan, Y. Feng, A. Delage, F. Yang, M. Davies, R. D. Goldberg, P. G. Piva, and I. V. Mitchell, “Photonic integrated circuits fabricated using ion implantation,” IEEE J. Sel Top Quant 4(4), 772–793 (1998).
[Crossref]

Demars, S.

F. Kish, R. Nagarajan, D. Welch, P. Evans, J. Rossi, J. Pleumeekers, A. Dentai, M. Kato, S. Corzine, R. Muthiah, M. Ziari, R. Schneider, M. Reffle, T. Butrie, D. Lambert, M. Missey, V. Lal, M. Fisher, S. Murthy, R. Salvatore, S. Demars, A. James, and C. Joyner, “From Visible Light-Emitting Diodes to Large-Scale III-V Photonic Integrated Circuits,” Proc. IEEE 101(10), 2255–2270 (2013).
[Crossref]

Dentai, A.

F. Kish, R. Nagarajan, D. Welch, P. Evans, J. Rossi, J. Pleumeekers, A. Dentai, M. Kato, S. Corzine, R. Muthiah, M. Ziari, R. Schneider, M. Reffle, T. Butrie, D. Lambert, M. Missey, V. Lal, M. Fisher, S. Murthy, R. Salvatore, S. Demars, A. James, and C. Joyner, “From Visible Light-Emitting Diodes to Large-Scale III-V Photonic Integrated Circuits,” Proc. IEEE 101(10), 2255–2270 (2013).
[Crossref]

Djie, H. S.

H. S. Djie and T. Mei, “Plasma-induced quantum well intermixing for monolithic photonic integration,” IEEE J. Sel. Top. Quant. 11(2), 373–382 (2005).
[Crossref]

Doylend, J. K.

M. J. R. Heck, J. F. Bauters, M. L. Davenport, J. K. Doylend, S. Jain, G. Kurczveil, S. Srinivasan, Y. Tang, and J. E. Bowers, “Hybrid Silicon Photonic Integrated Circuit Technology,” IEEE J. Sel. Top. Quant. 19(4), 6100117 (2013).
[Crossref]

Drouin, D.

J. Genest, J. J. J. Dubowski, V. Aimez, N. Pauc, D. Drouin, and M. Post, “UV laser controlled quantum well intermixing in InAlGaAs/GaAs heterostructures,” J. Phys. Conf. Ser. 59, 605–609 (2007).
[Crossref]

Du, S. C.

S. C. Du, L. Fu, H. H. Tan, and C. Jagadish, “Investigation of ion implantation induced intermixing in InP based quaternary quantum wells,” J. Phys. D Appl. Phys. 44(47), 475105 (2011).
[Crossref]

Dubowski, J. J.

N. Liu, S. Poulin, and J. J. Dubowski, “Enhanced photoluminescence emission from bandgap shifted InGaAs/InGaAsP/InP microstructures processed with UV laser quantum well intermixing,” J. Phys. D Appl. Phys. 46(44), 445103 (2013).
[Crossref]

M. Kaleem, X. Zhang, Y. Zhuang, J.-J. He, N. Liu, and J. J. Dubowski, “UV laser induced selective-area bandgap engineering for fabrication of InGaAsP/InP laser devices,” Opt. Laser Technol. 51, 36–42 (2013).
[Crossref]

N. Liu and J. J. Dubowski, “Chemical evolution of InP/InGaAs/InGaAsP microstructures irradiated in air and deionized water with ArF and KrF lasers,” Appl. Surf. Sci. 270, 16–24 (2013).
[Crossref]

R. Stanowski, M. Martin, R. Ares, and J. J. Dubowski, “Iterative bandgap engineering at selected areas of quantum semiconductor wafers,” Opt. Express 17(22), 19842–19847 (2009).
[Crossref] [PubMed]

J. Genest, R. Beal, V. Aimez, and J. J. Dubowski, “ArF laser-based quantum well intermixing in InGaAs/InGaAsP heterostructures,” Appl. Phys. Lett. 93(7), 071106 (2008).
[Crossref]

Dubowski, J. J. J.

J. Genest, J. J. J. Dubowski, V. Aimez, N. Pauc, D. Drouin, and M. Post, “UV laser controlled quantum well intermixing in InAlGaAs/GaAs heterostructures,” J. Phys. Conf. Ser. 59, 605–609 (2007).
[Crossref]

Evans, P.

F. Kish, R. Nagarajan, D. Welch, P. Evans, J. Rossi, J. Pleumeekers, A. Dentai, M. Kato, S. Corzine, R. Muthiah, M. Ziari, R. Schneider, M. Reffle, T. Butrie, D. Lambert, M. Missey, V. Lal, M. Fisher, S. Murthy, R. Salvatore, S. Demars, A. James, and C. Joyner, “From Visible Light-Emitting Diodes to Large-Scale III-V Photonic Integrated Circuits,” Proc. IEEE 101(10), 2255–2270 (2013).
[Crossref]

Feng, Y.

S. Charbonneau, E. S. Koteles, P. J. Poole, J. J. He, G. C. Aers, J. Haysom, M. Buchanan, Y. Feng, A. Delage, F. Yang, M. Davies, R. D. Goldberg, P. G. Piva, and I. V. Mitchell, “Photonic integrated circuits fabricated using ion implantation,” IEEE J. Sel Top Quant 4(4), 772–793 (1998).
[Crossref]

Fisher, M.

F. Kish, R. Nagarajan, D. Welch, P. Evans, J. Rossi, J. Pleumeekers, A. Dentai, M. Kato, S. Corzine, R. Muthiah, M. Ziari, R. Schneider, M. Reffle, T. Butrie, D. Lambert, M. Missey, V. Lal, M. Fisher, S. Murthy, R. Salvatore, S. Demars, A. James, and C. Joyner, “From Visible Light-Emitting Diodes to Large-Scale III-V Photonic Integrated Circuits,” Proc. IEEE 101(10), 2255–2270 (2013).
[Crossref]

Fu, L.

S. C. Du, L. Fu, H. H. Tan, and C. Jagadish, “Investigation of ion implantation induced intermixing in InP based quaternary quantum wells,” J. Phys. D Appl. Phys. 44(47), 475105 (2011).
[Crossref]

Furutsu, M.

H. Soda, M. Furutsu, K. Sato, N. Okazaki, S. Yamazaki, H. Nishimoto, and H. Ishikawa, “High-power and high-speed semi-insulating BH structure monolithic electroabsorption modulator/DFB laser light source,” Electron. Lett. 26(1), 9–10 (1990).
[Crossref]

Garrett, B.

C. J. McLean, J. H. Marsh, R. M. De La Rue, A. C. Bryce, B. Garrett, and R. W. Glew, “Layer selective disordering by photoabsorption-induced thermal diffusion in InGaAs/InP based multiquantum well structures,” Electron. Lett. 28(12), 1117–1119 (1992).
[Crossref]

Genest, J.

J. Genest, R. Beal, V. Aimez, and J. J. Dubowski, “ArF laser-based quantum well intermixing in InGaAs/InGaAsP heterostructures,” Appl. Phys. Lett. 93(7), 071106 (2008).
[Crossref]

J. Genest, J. J. J. Dubowski, V. Aimez, N. Pauc, D. Drouin, and M. Post, “UV laser controlled quantum well intermixing in InAlGaAs/GaAs heterostructures,” J. Phys. Conf. Ser. 59, 605–609 (2007).
[Crossref]

Gibbon, M.

M. Gibbon, J. P. Stagg, C. G. Cureton, E. J. Thrush, C. J. Jones, R. E. Mallard, R. E. Pritchards, N. Collis, and A. Chew, “Selective-area low-pressure MOCVD of GaInAsP and related materials on planar InP substrates,” Semicond. Sci. Technol. 8(6), 998–1010 (1993).
[Crossref]

Glew, R. W.

C. J. McLean, J. H. Marsh, R. M. De La Rue, A. C. Bryce, B. Garrett, and R. W. Glew, “Layer selective disordering by photoabsorption-induced thermal diffusion in InGaAs/InP based multiquantum well structures,” Electron. Lett. 28(12), 1117–1119 (1992).
[Crossref]

Goldberg, R. D.

S. Charbonneau, E. S. Koteles, P. J. Poole, J. J. He, G. C. Aers, J. Haysom, M. Buchanan, Y. Feng, A. Delage, F. Yang, M. Davies, R. D. Goldberg, P. G. Piva, and I. V. Mitchell, “Photonic integrated circuits fabricated using ion implantation,” IEEE J. Sel Top Quant 4(4), 772–793 (1998).
[Crossref]

Griffith, I.

P. J. Williams, P. M. Charles, I. Griffith, I. Considine, and A. C. Carter, “High performance buried ridge DFB lasers monolithically integrated with butt coupled strip loaded passive waveguides for OEIC,” Electron. Lett. 26(2), 142–143 (1990).
[Crossref]

Hamilton, C. J.

B. S. Ooi, C. J. Hamilton, K. McIlvaney, A. C. Bryce, R. M. De La Rue, J. H. Marsh, and J. S. Roberts, “Quantum- Well Intermixing in GaAs-AlGaAs Structures Using Pulsed Laser Irradiation,” IEEE Photonic. Tech. L. 9(5), 587–589 (1997).
[Crossref]

Harmsma, P. J.

C. A. Verschuren, P. J. Harmsma, Y. S. Oei, M. R. Leys, H. Vonk, and J. H. Wolter, “Butt-coupling loss of 0.1dB/interface in InP/InGaAs MQW waveguide-waveguide structures grown by selective area chemical beam epitaxy,” J. Cryst. Growth 188(1-4), 288–294 (1998).
[Crossref]

Haysom, J.

S. Charbonneau, E. S. Koteles, P. J. Poole, J. J. He, G. C. Aers, J. Haysom, M. Buchanan, Y. Feng, A. Delage, F. Yang, M. Davies, R. D. Goldberg, P. G. Piva, and I. V. Mitchell, “Photonic integrated circuits fabricated using ion implantation,” IEEE J. Sel Top Quant 4(4), 772–793 (1998).
[Crossref]

He, J. J.

M. Kaleem, X. Zhang, Y.-G. Yang, Y. Zhuang, and J. J. He, “Multi-bandgap photonic materials and devices fabricated by UV-laser induced quantum well intermixing,” Optoelectronics Lett. 9(5), 358–361 (2013).
[Crossref]

S. Charbonneau, E. S. Koteles, P. J. Poole, J. J. He, G. C. Aers, J. Haysom, M. Buchanan, Y. Feng, A. Delage, F. Yang, M. Davies, R. D. Goldberg, P. G. Piva, and I. V. Mitchell, “Photonic integrated circuits fabricated using ion implantation,” IEEE J. Sel Top Quant 4(4), 772–793 (1998).
[Crossref]

He, J.-J.

M. Kaleem, X. Zhang, Y. Zhuang, J.-J. He, N. Liu, and J. J. Dubowski, “UV laser induced selective-area bandgap engineering for fabrication of InGaAsP/InP laser devices,” Opt. Laser Technol. 51, 36–42 (2013).
[Crossref]

Heck, M. J. R.

M. J. R. Heck, J. F. Bauters, M. L. Davenport, J. K. Doylend, S. Jain, G. Kurczveil, S. Srinivasan, Y. Tang, and J. E. Bowers, “Hybrid Silicon Photonic Integrated Circuit Technology,” IEEE J. Sel. Top. Quant. 19(4), 6100117 (2013).
[Crossref]

Hess, K.

W. D. Laidig, N. Holonyak, M. D. Camaras, K. Hess, J. J. Coleman, P. D. Dapkus, and J. Bardeen, “Disorder of an AlAs-GaAs superlattice by impurity diffusion,” Appl. Phys. Lett. 38(10), 776 (1981).
[Crossref]

Holonyak, N.

W. D. Laidig, N. Holonyak, M. D. Camaras, K. Hess, J. J. Coleman, P. D. Dapkus, and J. Bardeen, “Disorder of an AlAs-GaAs superlattice by impurity diffusion,” Appl. Phys. Lett. 38(10), 776 (1981).
[Crossref]

Ishikawa, H.

H. Soda, M. Furutsu, K. Sato, N. Okazaki, S. Yamazaki, H. Nishimoto, and H. Ishikawa, “High-power and high-speed semi-insulating BH structure monolithic electroabsorption modulator/DFB laser light source,” Electron. Lett. 26(1), 9–10 (1990).
[Crossref]

Ishikawa, K.

J. Kanasaki, A. Okano, K. Ishikawa, Y. Nakai, and N. Itoh, “Defect-Initiated Emission of Ga Atoms from the Gaas (110) Surface-Induced by Pulsed-Laser Irradiation,” J. Phys. Condens. Matter 5(36), 6497–6506 (1993).
[Crossref]

Itoh, N.

N. Itoh and A. M. Stoneham, “Treatment of semiconductor surfaces by laser-induced electronic excitation,” J. Phys. Condens. Matter 13, R489–R503 (2001).

J. Kanasaki, A. Okano, K. Ishikawa, Y. Nakai, and N. Itoh, “Defect-Initiated Emission of Ga Atoms from the Gaas (110) Surface-Induced by Pulsed-Laser Irradiation,” J. Phys. Condens. Matter 5(36), 6497–6506 (1993).
[Crossref]

Jagadish, C.

S. C. Du, L. Fu, H. H. Tan, and C. Jagadish, “Investigation of ion implantation induced intermixing in InP based quaternary quantum wells,” J. Phys. D Appl. Phys. 44(47), 475105 (2011).
[Crossref]

Jain, S.

M. J. R. Heck, J. F. Bauters, M. L. Davenport, J. K. Doylend, S. Jain, G. Kurczveil, S. Srinivasan, Y. Tang, and J. E. Bowers, “Hybrid Silicon Photonic Integrated Circuit Technology,” IEEE J. Sel. Top. Quant. 19(4), 6100117 (2013).
[Crossref]

Jain, S. R.

James, A.

F. Kish, R. Nagarajan, D. Welch, P. Evans, J. Rossi, J. Pleumeekers, A. Dentai, M. Kato, S. Corzine, R. Muthiah, M. Ziari, R. Schneider, M. Reffle, T. Butrie, D. Lambert, M. Missey, V. Lal, M. Fisher, S. Murthy, R. Salvatore, S. Demars, A. James, and C. Joyner, “From Visible Light-Emitting Diodes to Large-Scale III-V Photonic Integrated Circuits,” Proc. IEEE 101(10), 2255–2270 (2013).
[Crossref]

Jones, A. M.

J. J. Coleman, R. M. Lammert, M. L. Osowski, and A. M. Jones, “Progress in InGaAs - GaAs Selective-Area MOCVD Toward Photonic Integrated Circuits,” IEEE J. Sel. Top. Quant. 3(3), 874–884 (1997).
[Crossref]

Jones, C. J.

M. Gibbon, J. P. Stagg, C. G. Cureton, E. J. Thrush, C. J. Jones, R. E. Mallard, R. E. Pritchards, N. Collis, and A. Chew, “Selective-area low-pressure MOCVD of GaInAsP and related materials on planar InP substrates,” Semicond. Sci. Technol. 8(6), 998–1010 (1993).
[Crossref]

Jones, R.

Joyner, C.

F. Kish, R. Nagarajan, D. Welch, P. Evans, J. Rossi, J. Pleumeekers, A. Dentai, M. Kato, S. Corzine, R. Muthiah, M. Ziari, R. Schneider, M. Reffle, T. Butrie, D. Lambert, M. Missey, V. Lal, M. Fisher, S. Murthy, R. Salvatore, S. Demars, A. James, and C. Joyner, “From Visible Light-Emitting Diodes to Large-Scale III-V Photonic Integrated Circuits,” Proc. IEEE 101(10), 2255–2270 (2013).
[Crossref]

Kaleem, M.

M. Kaleem, X. Zhang, Y. Zhuang, J.-J. He, N. Liu, and J. J. Dubowski, “UV laser induced selective-area bandgap engineering for fabrication of InGaAsP/InP laser devices,” Opt. Laser Technol. 51, 36–42 (2013).
[Crossref]

M. Kaleem, X. Zhang, Y.-G. Yang, Y. Zhuang, and J. J. He, “Multi-bandgap photonic materials and devices fabricated by UV-laser induced quantum well intermixing,” Optoelectronics Lett. 9(5), 358–361 (2013).
[Crossref]

Kanasaki, J.

J. Kanasaki, A. Okano, K. Ishikawa, Y. Nakai, and N. Itoh, “Defect-Initiated Emission of Ga Atoms from the Gaas (110) Surface-Induced by Pulsed-Laser Irradiation,” J. Phys. Condens. Matter 5(36), 6497–6506 (1993).
[Crossref]

Kato, M.

F. Kish, R. Nagarajan, D. Welch, P. Evans, J. Rossi, J. Pleumeekers, A. Dentai, M. Kato, S. Corzine, R. Muthiah, M. Ziari, R. Schneider, M. Reffle, T. Butrie, D. Lambert, M. Missey, V. Lal, M. Fisher, S. Murthy, R. Salvatore, S. Demars, A. James, and C. Joyner, “From Visible Light-Emitting Diodes to Large-Scale III-V Photonic Integrated Circuits,” Proc. IEEE 101(10), 2255–2270 (2013).
[Crossref]

Kish, F.

F. Kish, R. Nagarajan, D. Welch, P. Evans, J. Rossi, J. Pleumeekers, A. Dentai, M. Kato, S. Corzine, R. Muthiah, M. Ziari, R. Schneider, M. Reffle, T. Butrie, D. Lambert, M. Missey, V. Lal, M. Fisher, S. Murthy, R. Salvatore, S. Demars, A. James, and C. Joyner, “From Visible Light-Emitting Diodes to Large-Scale III-V Photonic Integrated Circuits,” Proc. IEEE 101(10), 2255–2270 (2013).
[Crossref]

Koteles, E. S.

S. Charbonneau, E. S. Koteles, P. J. Poole, J. J. He, G. C. Aers, J. Haysom, M. Buchanan, Y. Feng, A. Delage, F. Yang, M. Davies, R. D. Goldberg, P. G. Piva, and I. V. Mitchell, “Photonic integrated circuits fabricated using ion implantation,” IEEE J. Sel Top Quant 4(4), 772–793 (1998).
[Crossref]

Krakowski, M.

A. Talneau, D. Rondi, M. Krakowski, and R. Blondeau, “Very low threshold operation of 1.52 um GaInAsP/InP DFB buried ridge structure laser diodes entirely grown by MOCVD,” Electron. Lett. 24(10), 609–611 (1988).
[Crossref]

Kuo, Y. H.

Kurczveil, G.

M. J. R. Heck, J. F. Bauters, M. L. Davenport, J. K. Doylend, S. Jain, G. Kurczveil, S. Srinivasan, Y. Tang, and J. E. Bowers, “Hybrid Silicon Photonic Integrated Circuit Technology,” IEEE J. Sel. Top. Quant. 19(4), 6100117 (2013).
[Crossref]

S. R. Jain, M. N. Sysak, G. Kurczveil, and J. E. Bowers, “Integrated hybrid silicon DFB laser-EAM array using quantum well intermixing,” Opt. Express 19(14), 13692–13699 (2011).
[Crossref] [PubMed]

Laidig, W. D.

W. D. Laidig, N. Holonyak, M. D. Camaras, K. Hess, J. J. Coleman, P. D. Dapkus, and J. Bardeen, “Disorder of an AlAs-GaAs superlattice by impurity diffusion,” Appl. Phys. Lett. 38(10), 776 (1981).
[Crossref]

Lal, V.

F. Kish, R. Nagarajan, D. Welch, P. Evans, J. Rossi, J. Pleumeekers, A. Dentai, M. Kato, S. Corzine, R. Muthiah, M. Ziari, R. Schneider, M. Reffle, T. Butrie, D. Lambert, M. Missey, V. Lal, M. Fisher, S. Murthy, R. Salvatore, S. Demars, A. James, and C. Joyner, “From Visible Light-Emitting Diodes to Large-Scale III-V Photonic Integrated Circuits,” Proc. IEEE 101(10), 2255–2270 (2013).
[Crossref]

Lambert, D.

F. Kish, R. Nagarajan, D. Welch, P. Evans, J. Rossi, J. Pleumeekers, A. Dentai, M. Kato, S. Corzine, R. Muthiah, M. Ziari, R. Schneider, M. Reffle, T. Butrie, D. Lambert, M. Missey, V. Lal, M. Fisher, S. Murthy, R. Salvatore, S. Demars, A. James, and C. Joyner, “From Visible Light-Emitting Diodes to Large-Scale III-V Photonic Integrated Circuits,” Proc. IEEE 101(10), 2255–2270 (2013).
[Crossref]

Lammert, R. M.

J. J. Coleman, R. M. Lammert, M. L. Osowski, and A. M. Jones, “Progress in InGaAs - GaAs Selective-Area MOCVD Toward Photonic Integrated Circuits,” IEEE J. Sel. Top. Quant. 3(3), 874–884 (1997).
[Crossref]

Leys, M. R.

C. A. Verschuren, P. J. Harmsma, Y. S. Oei, M. R. Leys, H. Vonk, and J. H. Wolter, “Butt-coupling loss of 0.1dB/interface in InP/InGaAs MQW waveguide-waveguide structures grown by selective area chemical beam epitaxy,” J. Cryst. Growth 188(1-4), 288–294 (1998).
[Crossref]

Lim, H. S.

V. Aimez, J. Beauvais, J. Beerens, D. Morris, H. S. Lim, and Boon-Siew Ooi, “Low-Energy Ion-Implantation-Induced Quantum-Well Intermixing,” IEEE J. Sel. Top. Quant. 8(4), 870–879 (2002).
[Crossref]

Liu, N.

N. Liu and J. J. Dubowski, “Chemical evolution of InP/InGaAs/InGaAsP microstructures irradiated in air and deionized water with ArF and KrF lasers,” Appl. Surf. Sci. 270, 16–24 (2013).
[Crossref]

M. Kaleem, X. Zhang, Y. Zhuang, J.-J. He, N. Liu, and J. J. Dubowski, “UV laser induced selective-area bandgap engineering for fabrication of InGaAsP/InP laser devices,” Opt. Laser Technol. 51, 36–42 (2013).
[Crossref]

N. Liu, S. Poulin, and J. J. Dubowski, “Enhanced photoluminescence emission from bandgap shifted InGaAs/InGaAsP/InP microstructures processed with UV laser quantum well intermixing,” J. Phys. D Appl. Phys. 46(44), 445103 (2013).
[Crossref]

Lullo, G.

A. McKee, C. J. McLean, G. Lullo, A. C. Bryce, R. M. De La Rue, J. H. Marsh, and C. C. Button, “Monolithic integration in InGaAs-InGaAsP multiple-quantum-well structures using laser intermixing,” IEEE J. Quantum Electron. 33(1), 45–55 (1997).
[Crossref]

Mallard, R. E.

M. Gibbon, J. P. Stagg, C. G. Cureton, E. J. Thrush, C. J. Jones, R. E. Mallard, R. E. Pritchards, N. Collis, and A. Chew, “Selective-area low-pressure MOCVD of GaInAsP and related materials on planar InP substrates,” Semicond. Sci. Technol. 8(6), 998–1010 (1993).
[Crossref]

Marsh, J. H.

A. McKee, C. J. McLean, G. Lullo, A. C. Bryce, R. M. De La Rue, J. H. Marsh, and C. C. Button, “Monolithic integration in InGaAs-InGaAsP multiple-quantum-well structures using laser intermixing,” IEEE J. Quantum Electron. 33(1), 45–55 (1997).
[Crossref]

B. S. Ooi, C. J. Hamilton, K. McIlvaney, A. C. Bryce, R. M. De La Rue, J. H. Marsh, and J. S. Roberts, “Quantum- Well Intermixing in GaAs-AlGaAs Structures Using Pulsed Laser Irradiation,” IEEE Photonic. Tech. L. 9(5), 587–589 (1997).
[Crossref]

J. H. Marsh, “Quantum well intermixing,” Semicond. Sci. Technol. 8(6), 1136–1155 (1993).
[Crossref]

C. J. McLean, J. H. Marsh, R. M. De La Rue, A. C. Bryce, B. Garrett, and R. W. Glew, “Layer selective disordering by photoabsorption-induced thermal diffusion in InGaAs/InP based multiquantum well structures,” Electron. Lett. 28(12), 1117–1119 (1992).
[Crossref]

Martin, M.

McIlvaney, K.

B. S. Ooi, C. J. Hamilton, K. McIlvaney, A. C. Bryce, R. M. De La Rue, J. H. Marsh, and J. S. Roberts, “Quantum- Well Intermixing in GaAs-AlGaAs Structures Using Pulsed Laser Irradiation,” IEEE Photonic. Tech. L. 9(5), 587–589 (1997).
[Crossref]

McKee, A.

A. McKee, C. J. McLean, G. Lullo, A. C. Bryce, R. M. De La Rue, J. H. Marsh, and C. C. Button, “Monolithic integration in InGaAs-InGaAsP multiple-quantum-well structures using laser intermixing,” IEEE J. Quantum Electron. 33(1), 45–55 (1997).
[Crossref]

McLean, C. J.

A. McKee, C. J. McLean, G. Lullo, A. C. Bryce, R. M. De La Rue, J. H. Marsh, and C. C. Button, “Monolithic integration in InGaAs-InGaAsP multiple-quantum-well structures using laser intermixing,” IEEE J. Quantum Electron. 33(1), 45–55 (1997).
[Crossref]

C. J. McLean, J. H. Marsh, R. M. De La Rue, A. C. Bryce, B. Garrett, and R. W. Glew, “Layer selective disordering by photoabsorption-induced thermal diffusion in InGaAs/InP based multiquantum well structures,” Electron. Lett. 28(12), 1117–1119 (1992).
[Crossref]

Mei, T.

H. S. Djie and T. Mei, “Plasma-induced quantum well intermixing for monolithic photonic integration,” IEEE J. Sel. Top. Quant. 11(2), 373–382 (2005).
[Crossref]

Missey, M.

F. Kish, R. Nagarajan, D. Welch, P. Evans, J. Rossi, J. Pleumeekers, A. Dentai, M. Kato, S. Corzine, R. Muthiah, M. Ziari, R. Schneider, M. Reffle, T. Butrie, D. Lambert, M. Missey, V. Lal, M. Fisher, S. Murthy, R. Salvatore, S. Demars, A. James, and C. Joyner, “From Visible Light-Emitting Diodes to Large-Scale III-V Photonic Integrated Circuits,” Proc. IEEE 101(10), 2255–2270 (2013).
[Crossref]

Mitchell, I. V.

S. Charbonneau, E. S. Koteles, P. J. Poole, J. J. He, G. C. Aers, J. Haysom, M. Buchanan, Y. Feng, A. Delage, F. Yang, M. Davies, R. D. Goldberg, P. G. Piva, and I. V. Mitchell, “Photonic integrated circuits fabricated using ion implantation,” IEEE J. Sel Top Quant 4(4), 772–793 (1998).
[Crossref]

Morris, D.

V. Aimez, J. Beauvais, J. Beerens, D. Morris, H. S. Lim, and Boon-Siew Ooi, “Low-Energy Ion-Implantation-Induced Quantum-Well Intermixing,” IEEE J. Sel. Top. Quant. 8(4), 870–879 (2002).
[Crossref]

Murthy, S.

F. Kish, R. Nagarajan, D. Welch, P. Evans, J. Rossi, J. Pleumeekers, A. Dentai, M. Kato, S. Corzine, R. Muthiah, M. Ziari, R. Schneider, M. Reffle, T. Butrie, D. Lambert, M. Missey, V. Lal, M. Fisher, S. Murthy, R. Salvatore, S. Demars, A. James, and C. Joyner, “From Visible Light-Emitting Diodes to Large-Scale III-V Photonic Integrated Circuits,” Proc. IEEE 101(10), 2255–2270 (2013).
[Crossref]

Muthiah, R.

F. Kish, R. Nagarajan, D. Welch, P. Evans, J. Rossi, J. Pleumeekers, A. Dentai, M. Kato, S. Corzine, R. Muthiah, M. Ziari, R. Schneider, M. Reffle, T. Butrie, D. Lambert, M. Missey, V. Lal, M. Fisher, S. Murthy, R. Salvatore, S. Demars, A. James, and C. Joyner, “From Visible Light-Emitting Diodes to Large-Scale III-V Photonic Integrated Circuits,” Proc. IEEE 101(10), 2255–2270 (2013).
[Crossref]

Nagarajan, R.

F. Kish, R. Nagarajan, D. Welch, P. Evans, J. Rossi, J. Pleumeekers, A. Dentai, M. Kato, S. Corzine, R. Muthiah, M. Ziari, R. Schneider, M. Reffle, T. Butrie, D. Lambert, M. Missey, V. Lal, M. Fisher, S. Murthy, R. Salvatore, S. Demars, A. James, and C. Joyner, “From Visible Light-Emitting Diodes to Large-Scale III-V Photonic Integrated Circuits,” Proc. IEEE 101(10), 2255–2270 (2013).
[Crossref]

Nakai, Y.

J. Kanasaki, A. Okano, K. Ishikawa, Y. Nakai, and N. Itoh, “Defect-Initiated Emission of Ga Atoms from the Gaas (110) Surface-Induced by Pulsed-Laser Irradiation,” J. Phys. Condens. Matter 5(36), 6497–6506 (1993).
[Crossref]

Nishimoto, H.

H. Soda, M. Furutsu, K. Sato, N. Okazaki, S. Yamazaki, H. Nishimoto, and H. Ishikawa, “High-power and high-speed semi-insulating BH structure monolithic electroabsorption modulator/DFB laser light source,” Electron. Lett. 26(1), 9–10 (1990).
[Crossref]

Oei, Y. S.

C. A. Verschuren, P. J. Harmsma, Y. S. Oei, M. R. Leys, H. Vonk, and J. H. Wolter, “Butt-coupling loss of 0.1dB/interface in InP/InGaAs MQW waveguide-waveguide structures grown by selective area chemical beam epitaxy,” J. Cryst. Growth 188(1-4), 288–294 (1998).
[Crossref]

Okano, A.

J. Kanasaki, A. Okano, K. Ishikawa, Y. Nakai, and N. Itoh, “Defect-Initiated Emission of Ga Atoms from the Gaas (110) Surface-Induced by Pulsed-Laser Irradiation,” J. Phys. Condens. Matter 5(36), 6497–6506 (1993).
[Crossref]

Okazaki, N.

H. Soda, M. Furutsu, K. Sato, N. Okazaki, S. Yamazaki, H. Nishimoto, and H. Ishikawa, “High-power and high-speed semi-insulating BH structure monolithic electroabsorption modulator/DFB laser light source,” Electron. Lett. 26(1), 9–10 (1990).
[Crossref]

Ooi, B. S.

B. S. Ooi, C. J. Hamilton, K. McIlvaney, A. C. Bryce, R. M. De La Rue, J. H. Marsh, and J. S. Roberts, “Quantum- Well Intermixing in GaAs-AlGaAs Structures Using Pulsed Laser Irradiation,” IEEE Photonic. Tech. L. 9(5), 587–589 (1997).
[Crossref]

Osowski, M. L.

J. J. Coleman, R. M. Lammert, M. L. Osowski, and A. M. Jones, “Progress in InGaAs - GaAs Selective-Area MOCVD Toward Photonic Integrated Circuits,” IEEE J. Sel. Top. Quant. 3(3), 874–884 (1997).
[Crossref]

Pauc, N.

J. Genest, J. J. J. Dubowski, V. Aimez, N. Pauc, D. Drouin, and M. Post, “UV laser controlled quantum well intermixing in InAlGaAs/GaAs heterostructures,” J. Phys. Conf. Ser. 59, 605–609 (2007).
[Crossref]

Piva, P. G.

S. Charbonneau, E. S. Koteles, P. J. Poole, J. J. He, G. C. Aers, J. Haysom, M. Buchanan, Y. Feng, A. Delage, F. Yang, M. Davies, R. D. Goldberg, P. G. Piva, and I. V. Mitchell, “Photonic integrated circuits fabricated using ion implantation,” IEEE J. Sel Top Quant 4(4), 772–793 (1998).
[Crossref]

Pleumeekers, J.

F. Kish, R. Nagarajan, D. Welch, P. Evans, J. Rossi, J. Pleumeekers, A. Dentai, M. Kato, S. Corzine, R. Muthiah, M. Ziari, R. Schneider, M. Reffle, T. Butrie, D. Lambert, M. Missey, V. Lal, M. Fisher, S. Murthy, R. Salvatore, S. Demars, A. James, and C. Joyner, “From Visible Light-Emitting Diodes to Large-Scale III-V Photonic Integrated Circuits,” Proc. IEEE 101(10), 2255–2270 (2013).
[Crossref]

Poole, P. J.

S. Charbonneau, E. S. Koteles, P. J. Poole, J. J. He, G. C. Aers, J. Haysom, M. Buchanan, Y. Feng, A. Delage, F. Yang, M. Davies, R. D. Goldberg, P. G. Piva, and I. V. Mitchell, “Photonic integrated circuits fabricated using ion implantation,” IEEE J. Sel Top Quant 4(4), 772–793 (1998).
[Crossref]

Post, M.

J. Genest, J. J. J. Dubowski, V. Aimez, N. Pauc, D. Drouin, and M. Post, “UV laser controlled quantum well intermixing in InAlGaAs/GaAs heterostructures,” J. Phys. Conf. Ser. 59, 605–609 (2007).
[Crossref]

Poulin, S.

N. Liu, S. Poulin, and J. J. Dubowski, “Enhanced photoluminescence emission from bandgap shifted InGaAs/InGaAsP/InP microstructures processed with UV laser quantum well intermixing,” J. Phys. D Appl. Phys. 46(44), 445103 (2013).
[Crossref]

Pritchards, R. E.

M. Gibbon, J. P. Stagg, C. G. Cureton, E. J. Thrush, C. J. Jones, R. E. Mallard, R. E. Pritchards, N. Collis, and A. Chew, “Selective-area low-pressure MOCVD of GaInAsP and related materials on planar InP substrates,” Semicond. Sci. Technol. 8(6), 998–1010 (1993).
[Crossref]

Reffle, M.

F. Kish, R. Nagarajan, D. Welch, P. Evans, J. Rossi, J. Pleumeekers, A. Dentai, M. Kato, S. Corzine, R. Muthiah, M. Ziari, R. Schneider, M. Reffle, T. Butrie, D. Lambert, M. Missey, V. Lal, M. Fisher, S. Murthy, R. Salvatore, S. Demars, A. James, and C. Joyner, “From Visible Light-Emitting Diodes to Large-Scale III-V Photonic Integrated Circuits,” Proc. IEEE 101(10), 2255–2270 (2013).
[Crossref]

Roberts, J. S.

B. S. Ooi, C. J. Hamilton, K. McIlvaney, A. C. Bryce, R. M. De La Rue, J. H. Marsh, and J. S. Roberts, “Quantum- Well Intermixing in GaAs-AlGaAs Structures Using Pulsed Laser Irradiation,” IEEE Photonic. Tech. L. 9(5), 587–589 (1997).
[Crossref]

Rondi, D.

A. Talneau, D. Rondi, M. Krakowski, and R. Blondeau, “Very low threshold operation of 1.52 um GaInAsP/InP DFB buried ridge structure laser diodes entirely grown by MOCVD,” Electron. Lett. 24(10), 609–611 (1988).
[Crossref]

Rossi, J.

F. Kish, R. Nagarajan, D. Welch, P. Evans, J. Rossi, J. Pleumeekers, A. Dentai, M. Kato, S. Corzine, R. Muthiah, M. Ziari, R. Schneider, M. Reffle, T. Butrie, D. Lambert, M. Missey, V. Lal, M. Fisher, S. Murthy, R. Salvatore, S. Demars, A. James, and C. Joyner, “From Visible Light-Emitting Diodes to Large-Scale III-V Photonic Integrated Circuits,” Proc. IEEE 101(10), 2255–2270 (2013).
[Crossref]

Salvatore, R.

F. Kish, R. Nagarajan, D. Welch, P. Evans, J. Rossi, J. Pleumeekers, A. Dentai, M. Kato, S. Corzine, R. Muthiah, M. Ziari, R. Schneider, M. Reffle, T. Butrie, D. Lambert, M. Missey, V. Lal, M. Fisher, S. Murthy, R. Salvatore, S. Demars, A. James, and C. Joyner, “From Visible Light-Emitting Diodes to Large-Scale III-V Photonic Integrated Circuits,” Proc. IEEE 101(10), 2255–2270 (2013).
[Crossref]

Sato, K.

H. Soda, M. Furutsu, K. Sato, N. Okazaki, S. Yamazaki, H. Nishimoto, and H. Ishikawa, “High-power and high-speed semi-insulating BH structure monolithic electroabsorption modulator/DFB laser light source,” Electron. Lett. 26(1), 9–10 (1990).
[Crossref]

Schneider, R.

F. Kish, R. Nagarajan, D. Welch, P. Evans, J. Rossi, J. Pleumeekers, A. Dentai, M. Kato, S. Corzine, R. Muthiah, M. Ziari, R. Schneider, M. Reffle, T. Butrie, D. Lambert, M. Missey, V. Lal, M. Fisher, S. Murthy, R. Salvatore, S. Demars, A. James, and C. Joyner, “From Visible Light-Emitting Diodes to Large-Scale III-V Photonic Integrated Circuits,” Proc. IEEE 101(10), 2255–2270 (2013).
[Crossref]

Soda, H.

H. Soda, M. Furutsu, K. Sato, N. Okazaki, S. Yamazaki, H. Nishimoto, and H. Ishikawa, “High-power and high-speed semi-insulating BH structure monolithic electroabsorption modulator/DFB laser light source,” Electron. Lett. 26(1), 9–10 (1990).
[Crossref]

Srinivasan, S.

M. J. R. Heck, J. F. Bauters, M. L. Davenport, J. K. Doylend, S. Jain, G. Kurczveil, S. Srinivasan, Y. Tang, and J. E. Bowers, “Hybrid Silicon Photonic Integrated Circuit Technology,” IEEE J. Sel. Top. Quant. 19(4), 6100117 (2013).
[Crossref]

Stagg, J. P.

M. Gibbon, J. P. Stagg, C. G. Cureton, E. J. Thrush, C. J. Jones, R. E. Mallard, R. E. Pritchards, N. Collis, and A. Chew, “Selective-area low-pressure MOCVD of GaInAsP and related materials on planar InP substrates,” Semicond. Sci. Technol. 8(6), 998–1010 (1993).
[Crossref]

Stanowski, R.

Stoneham, A. M.

N. Itoh and A. M. Stoneham, “Treatment of semiconductor surfaces by laser-induced electronic excitation,” J. Phys. Condens. Matter 13, R489–R503 (2001).

Sysak, M. N.

Talneau, A.

A. Talneau, D. Rondi, M. Krakowski, and R. Blondeau, “Very low threshold operation of 1.52 um GaInAsP/InP DFB buried ridge structure laser diodes entirely grown by MOCVD,” Electron. Lett. 24(10), 609–611 (1988).
[Crossref]

Tan, H. H.

S. C. Du, L. Fu, H. H. Tan, and C. Jagadish, “Investigation of ion implantation induced intermixing in InP based quaternary quantum wells,” J. Phys. D Appl. Phys. 44(47), 475105 (2011).
[Crossref]

Tang, Y.

M. J. R. Heck, J. F. Bauters, M. L. Davenport, J. K. Doylend, S. Jain, G. Kurczveil, S. Srinivasan, Y. Tang, and J. E. Bowers, “Hybrid Silicon Photonic Integrated Circuit Technology,” IEEE J. Sel. Top. Quant. 19(4), 6100117 (2013).
[Crossref]

Thrush, E. J.

M. Gibbon, J. P. Stagg, C. G. Cureton, E. J. Thrush, C. J. Jones, R. E. Mallard, R. E. Pritchards, N. Collis, and A. Chew, “Selective-area low-pressure MOCVD of GaInAsP and related materials on planar InP substrates,” Semicond. Sci. Technol. 8(6), 998–1010 (1993).
[Crossref]

Tränkle, G.

K. Brunner, U. Bockelmann, G. Abstreiter, M. Walther, G. Böhm, G. Tränkle, and G. Weimann, “Photoluminescence from a Single GaAs/AlGaAs Quantum Dot,” Phys. Rev. Lett. 69(22), 3216–3219 (1992).
[Crossref] [PubMed]

Verschuren, C. A.

C. A. Verschuren, P. J. Harmsma, Y. S. Oei, M. R. Leys, H. Vonk, and J. H. Wolter, “Butt-coupling loss of 0.1dB/interface in InP/InGaAs MQW waveguide-waveguide structures grown by selective area chemical beam epitaxy,” J. Cryst. Growth 188(1-4), 288–294 (1998).
[Crossref]

Vonk, H.

C. A. Verschuren, P. J. Harmsma, Y. S. Oei, M. R. Leys, H. Vonk, and J. H. Wolter, “Butt-coupling loss of 0.1dB/interface in InP/InGaAs MQW waveguide-waveguide structures grown by selective area chemical beam epitaxy,” J. Cryst. Growth 188(1-4), 288–294 (1998).
[Crossref]

Walther, M.

K. Brunner, U. Bockelmann, G. Abstreiter, M. Walther, G. Böhm, G. Tränkle, and G. Weimann, “Photoluminescence from a Single GaAs/AlGaAs Quantum Dot,” Phys. Rev. Lett. 69(22), 3216–3219 (1992).
[Crossref] [PubMed]

Weimann, G.

K. Brunner, U. Bockelmann, G. Abstreiter, M. Walther, G. Böhm, G. Tränkle, and G. Weimann, “Photoluminescence from a Single GaAs/AlGaAs Quantum Dot,” Phys. Rev. Lett. 69(22), 3216–3219 (1992).
[Crossref] [PubMed]

Welch, D.

F. Kish, R. Nagarajan, D. Welch, P. Evans, J. Rossi, J. Pleumeekers, A. Dentai, M. Kato, S. Corzine, R. Muthiah, M. Ziari, R. Schneider, M. Reffle, T. Butrie, D. Lambert, M. Missey, V. Lal, M. Fisher, S. Murthy, R. Salvatore, S. Demars, A. James, and C. Joyner, “From Visible Light-Emitting Diodes to Large-Scale III-V Photonic Integrated Circuits,” Proc. IEEE 101(10), 2255–2270 (2013).
[Crossref]

Williams, P. J.

P. J. Williams, P. M. Charles, I. Griffith, I. Considine, and A. C. Carter, “High performance buried ridge DFB lasers monolithically integrated with butt coupled strip loaded passive waveguides for OEIC,” Electron. Lett. 26(2), 142–143 (1990).
[Crossref]

Wolter, J. H.

C. A. Verschuren, P. J. Harmsma, Y. S. Oei, M. R. Leys, H. Vonk, and J. H. Wolter, “Butt-coupling loss of 0.1dB/interface in InP/InGaAs MQW waveguide-waveguide structures grown by selective area chemical beam epitaxy,” J. Cryst. Growth 188(1-4), 288–294 (1998).
[Crossref]

Yamazaki, S.

H. Soda, M. Furutsu, K. Sato, N. Okazaki, S. Yamazaki, H. Nishimoto, and H. Ishikawa, “High-power and high-speed semi-insulating BH structure monolithic electroabsorption modulator/DFB laser light source,” Electron. Lett. 26(1), 9–10 (1990).
[Crossref]

Yang, F.

S. Charbonneau, E. S. Koteles, P. J. Poole, J. J. He, G. C. Aers, J. Haysom, M. Buchanan, Y. Feng, A. Delage, F. Yang, M. Davies, R. D. Goldberg, P. G. Piva, and I. V. Mitchell, “Photonic integrated circuits fabricated using ion implantation,” IEEE J. Sel Top Quant 4(4), 772–793 (1998).
[Crossref]

Yang, Y.-G.

M. Kaleem, X. Zhang, Y.-G. Yang, Y. Zhuang, and J. J. He, “Multi-bandgap photonic materials and devices fabricated by UV-laser induced quantum well intermixing,” Optoelectronics Lett. 9(5), 358–361 (2013).
[Crossref]

Zhang, X.

M. Kaleem, X. Zhang, Y.-G. Yang, Y. Zhuang, and J. J. He, “Multi-bandgap photonic materials and devices fabricated by UV-laser induced quantum well intermixing,” Optoelectronics Lett. 9(5), 358–361 (2013).
[Crossref]

M. Kaleem, X. Zhang, Y. Zhuang, J.-J. He, N. Liu, and J. J. Dubowski, “UV laser induced selective-area bandgap engineering for fabrication of InGaAsP/InP laser devices,” Opt. Laser Technol. 51, 36–42 (2013).
[Crossref]

Zhuang, Y.

M. Kaleem, X. Zhang, Y. Zhuang, J.-J. He, N. Liu, and J. J. Dubowski, “UV laser induced selective-area bandgap engineering for fabrication of InGaAsP/InP laser devices,” Opt. Laser Technol. 51, 36–42 (2013).
[Crossref]

M. Kaleem, X. Zhang, Y.-G. Yang, Y. Zhuang, and J. J. He, “Multi-bandgap photonic materials and devices fabricated by UV-laser induced quantum well intermixing,” Optoelectronics Lett. 9(5), 358–361 (2013).
[Crossref]

Ziari, M.

F. Kish, R. Nagarajan, D. Welch, P. Evans, J. Rossi, J. Pleumeekers, A. Dentai, M. Kato, S. Corzine, R. Muthiah, M. Ziari, R. Schneider, M. Reffle, T. Butrie, D. Lambert, M. Missey, V. Lal, M. Fisher, S. Murthy, R. Salvatore, S. Demars, A. James, and C. Joyner, “From Visible Light-Emitting Diodes to Large-Scale III-V Photonic Integrated Circuits,” Proc. IEEE 101(10), 2255–2270 (2013).
[Crossref]

Appl. Phys. Lett. (2)

W. D. Laidig, N. Holonyak, M. D. Camaras, K. Hess, J. J. Coleman, P. D. Dapkus, and J. Bardeen, “Disorder of an AlAs-GaAs superlattice by impurity diffusion,” Appl. Phys. Lett. 38(10), 776 (1981).
[Crossref]

J. Genest, R. Beal, V. Aimez, and J. J. Dubowski, “ArF laser-based quantum well intermixing in InGaAs/InGaAsP heterostructures,” Appl. Phys. Lett. 93(7), 071106 (2008).
[Crossref]

Appl. Surf. Sci. (1)

N. Liu and J. J. Dubowski, “Chemical evolution of InP/InGaAs/InGaAsP microstructures irradiated in air and deionized water with ArF and KrF lasers,” Appl. Surf. Sci. 270, 16–24 (2013).
[Crossref]

Electron. Lett. (4)

H. Soda, M. Furutsu, K. Sato, N. Okazaki, S. Yamazaki, H. Nishimoto, and H. Ishikawa, “High-power and high-speed semi-insulating BH structure monolithic electroabsorption modulator/DFB laser light source,” Electron. Lett. 26(1), 9–10 (1990).
[Crossref]

C. J. McLean, J. H. Marsh, R. M. De La Rue, A. C. Bryce, B. Garrett, and R. W. Glew, “Layer selective disordering by photoabsorption-induced thermal diffusion in InGaAs/InP based multiquantum well structures,” Electron. Lett. 28(12), 1117–1119 (1992).
[Crossref]

A. Talneau, D. Rondi, M. Krakowski, and R. Blondeau, “Very low threshold operation of 1.52 um GaInAsP/InP DFB buried ridge structure laser diodes entirely grown by MOCVD,” Electron. Lett. 24(10), 609–611 (1988).
[Crossref]

P. J. Williams, P. M. Charles, I. Griffith, I. Considine, and A. C. Carter, “High performance buried ridge DFB lasers monolithically integrated with butt coupled strip loaded passive waveguides for OEIC,” Electron. Lett. 26(2), 142–143 (1990).
[Crossref]

IEEE J. Quantum Electron. (1)

A. McKee, C. J. McLean, G. Lullo, A. C. Bryce, R. M. De La Rue, J. H. Marsh, and C. C. Button, “Monolithic integration in InGaAs-InGaAsP multiple-quantum-well structures using laser intermixing,” IEEE J. Quantum Electron. 33(1), 45–55 (1997).
[Crossref]

IEEE J. Sel Top Quant (1)

S. Charbonneau, E. S. Koteles, P. J. Poole, J. J. He, G. C. Aers, J. Haysom, M. Buchanan, Y. Feng, A. Delage, F. Yang, M. Davies, R. D. Goldberg, P. G. Piva, and I. V. Mitchell, “Photonic integrated circuits fabricated using ion implantation,” IEEE J. Sel Top Quant 4(4), 772–793 (1998).
[Crossref]

IEEE J. Sel. Top. Quant. (4)

J. J. Coleman, R. M. Lammert, M. L. Osowski, and A. M. Jones, “Progress in InGaAs - GaAs Selective-Area MOCVD Toward Photonic Integrated Circuits,” IEEE J. Sel. Top. Quant. 3(3), 874–884 (1997).
[Crossref]

M. J. R. Heck, J. F. Bauters, M. L. Davenport, J. K. Doylend, S. Jain, G. Kurczveil, S. Srinivasan, Y. Tang, and J. E. Bowers, “Hybrid Silicon Photonic Integrated Circuit Technology,” IEEE J. Sel. Top. Quant. 19(4), 6100117 (2013).
[Crossref]

H. S. Djie and T. Mei, “Plasma-induced quantum well intermixing for monolithic photonic integration,” IEEE J. Sel. Top. Quant. 11(2), 373–382 (2005).
[Crossref]

V. Aimez, J. Beauvais, J. Beerens, D. Morris, H. S. Lim, and Boon-Siew Ooi, “Low-Energy Ion-Implantation-Induced Quantum-Well Intermixing,” IEEE J. Sel. Top. Quant. 8(4), 870–879 (2002).
[Crossref]

IEEE Photonic. Tech. L. (1)

B. S. Ooi, C. J. Hamilton, K. McIlvaney, A. C. Bryce, R. M. De La Rue, J. H. Marsh, and J. S. Roberts, “Quantum- Well Intermixing in GaAs-AlGaAs Structures Using Pulsed Laser Irradiation,” IEEE Photonic. Tech. L. 9(5), 587–589 (1997).
[Crossref]

J. Cryst. Growth (1)

C. A. Verschuren, P. J. Harmsma, Y. S. Oei, M. R. Leys, H. Vonk, and J. H. Wolter, “Butt-coupling loss of 0.1dB/interface in InP/InGaAs MQW waveguide-waveguide structures grown by selective area chemical beam epitaxy,” J. Cryst. Growth 188(1-4), 288–294 (1998).
[Crossref]

J. Phys. Condens. Matter (2)

J. Kanasaki, A. Okano, K. Ishikawa, Y. Nakai, and N. Itoh, “Defect-Initiated Emission of Ga Atoms from the Gaas (110) Surface-Induced by Pulsed-Laser Irradiation,” J. Phys. Condens. Matter 5(36), 6497–6506 (1993).
[Crossref]

N. Itoh and A. M. Stoneham, “Treatment of semiconductor surfaces by laser-induced electronic excitation,” J. Phys. Condens. Matter 13, R489–R503 (2001).

J. Phys. Conf. Ser. (1)

J. Genest, J. J. J. Dubowski, V. Aimez, N. Pauc, D. Drouin, and M. Post, “UV laser controlled quantum well intermixing in InAlGaAs/GaAs heterostructures,” J. Phys. Conf. Ser. 59, 605–609 (2007).
[Crossref]

J. Phys. D Appl. Phys. (2)

N. Liu, S. Poulin, and J. J. Dubowski, “Enhanced photoluminescence emission from bandgap shifted InGaAs/InGaAsP/InP microstructures processed with UV laser quantum well intermixing,” J. Phys. D Appl. Phys. 46(44), 445103 (2013).
[Crossref]

S. C. Du, L. Fu, H. H. Tan, and C. Jagadish, “Investigation of ion implantation induced intermixing in InP based quaternary quantum wells,” J. Phys. D Appl. Phys. 44(47), 475105 (2011).
[Crossref]

Opt. Express (3)

Opt. Laser Technol. (1)

M. Kaleem, X. Zhang, Y. Zhuang, J.-J. He, N. Liu, and J. J. Dubowski, “UV laser induced selective-area bandgap engineering for fabrication of InGaAsP/InP laser devices,” Opt. Laser Technol. 51, 36–42 (2013).
[Crossref]

Optoelectronics Lett. (1)

M. Kaleem, X. Zhang, Y.-G. Yang, Y. Zhuang, and J. J. He, “Multi-bandgap photonic materials and devices fabricated by UV-laser induced quantum well intermixing,” Optoelectronics Lett. 9(5), 358–361 (2013).
[Crossref]

Phys. Rev. Lett. (1)

K. Brunner, U. Bockelmann, G. Abstreiter, M. Walther, G. Böhm, G. Tränkle, and G. Weimann, “Photoluminescence from a Single GaAs/AlGaAs Quantum Dot,” Phys. Rev. Lett. 69(22), 3216–3219 (1992).
[Crossref] [PubMed]

Proc. IEEE (1)

F. Kish, R. Nagarajan, D. Welch, P. Evans, J. Rossi, J. Pleumeekers, A. Dentai, M. Kato, S. Corzine, R. Muthiah, M. Ziari, R. Schneider, M. Reffle, T. Butrie, D. Lambert, M. Missey, V. Lal, M. Fisher, S. Murthy, R. Salvatore, S. Demars, A. James, and C. Joyner, “From Visible Light-Emitting Diodes to Large-Scale III-V Photonic Integrated Circuits,” Proc. IEEE 101(10), 2255–2270 (2013).
[Crossref]

Semicond. Sci. Technol. (2)

J. H. Marsh, “Quantum well intermixing,” Semicond. Sci. Technol. 8(6), 1136–1155 (1993).
[Crossref]

M. Gibbon, J. P. Stagg, C. G. Cureton, E. J. Thrush, C. J. Jones, R. E. Mallard, R. E. Pritchards, N. Collis, and A. Chew, “Selective-area low-pressure MOCVD of GaInAsP and related materials on planar InP substrates,” Semicond. Sci. Technol. 8(6), 998–1010 (1993).
[Crossref]

Other (2)

H. Li, Semiconductor Quantum Wells Intermixing (Gordon and Breach Science Publishers, 2000).

J. E. Haysom, Quantum Well Intermixing of InGaAs(P)/InP Heterostructures (2001).

Cited By

OSA participates in Crossref's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (5)

Fig. 1
Fig. 1 Cross-section of the 5-QW laser heterostructure employed for a reproducibility study of the UV-Laser-QWI process.
Fig. 2
Fig. 2 (a) PL blue shift as a function of pulse number for samples irradiated at 155 mJ/cm2. The results shown with the same style symbols identify the sites processed on the same sample. (b) Average values of PL blue shift (δblue) collected as a function of pulse number (only data for minimum 4 sites irradiated under the nominally same conditions are taken into account).
Fig. 3
Fig. 3 Distribution of the ∣Δλ∣values for the unirradiated material (red columns) and samples irradiated with 4-15 pulses (green columns) and 50-70 pulses (blue columns).
Fig. 4
Fig. 4 PL determined blue shift as a function of the RTA temperature for as-received material (■) and sites annealed with 20 (●) and 60 (▲) pulses.
Fig. 5
Fig. 5 Distribution of the ∣Δλ∣values for two samples irradiated at 34 sites with 15 pulses (green columns) and 30 sites with 50-70 pulses (blue columns) respectively.

Metrics