Abstract

A high-power optically-pumped vertical-external-cavity surface-emitting laser (VECSEL) generating 10.5 W of cw output power at 615 nm is reported. The gain mirror incorporated 10 GaInNAs quantum wells and was designed to have an emission peak in the 1230 nm range. The fundamental emission was frequency doubled to the red spectral range by using an intra-cavity nonlinear LBO crystal. The maximum optical-to-optical conversion efficiency was 17.5%. The VECSEL was also operated in pulsed mode by directly modulating the pump laser to produce light pulses with duration of ~1.5 µs. The maximum peak power for pulsed operation (pump limited) was 13.8 W. This corresponded to an optical-to-optical conversion efficiency of 20.4%.

© 2015 Optical Society of America

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  1. W. J. Alford, G. J. Fetzer, R. J. Epstein, A. Sandalphon, N. Van Lieu, S. Ranta, M. Tavast, T. Leinonen, and M. Guina, “Optically pumped semiconductor lasers for precision spectroscopic applications,” IEEE J. Quantum Electron. 49(8), 719–727 (2013).
    [Crossref]
  2. S. Ranta, M. Tavast, T. Leinonen, T. Epstein, and M. Guina, “Narrow linewidth 1118/559 nm VECSEL based on strain compensated GaInAs/GaAs quantum-wells for laser cooling of Mg-ions,” Opt. Mater. Express 2(8), 1011–1019 (2012).
    [Crossref]
  3. K. Kuramoto, T. Nishida, S. Abe, M. Miyashita, K. Mori, and T. Yagi, “High power operation of AlGaInP red laser diode for display applications,” Proc. SPIE 9348, 93480H (2015).
    [Crossref]
  4. L. Toikkanen, A. Härkönen, J. Lyytikäinen, T. Leinonen, A. Tukiainen, J. Viheriälä, M. Bister, and M. Guina, “Optically pumped edge-emitting GaAs laser with direct orange emission,” IEEE Photonics Technol. Lett. 26(4), 384–386 (2014).
    [Crossref]
  5. M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “Design and characteristics of high-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 Beams,” IEEE J. Sel. Top. Quantum Electron. 5(3), 561–573 (1999).
    [Crossref]
  6. S. Calvez, J. E. Hastie, M. Guina, O. G. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photonics Rev. 3(5), 1–28 (2009).
    [Crossref]
  7. C. Hessenius, P. Y. Guinet, M. Lukowski, J. Moloney, and M. Fallahi, “589-nm single-frequency VECSEL for sodium guidestar applications,” Proc. SPIE 8242, 82420E (2012).
    [Crossref]
  8. J. L. A. Chilla, Q. Shu, H. Zhou, E. S. Weiss, M. K. Reed, and L. Spinelli, “Recent advances in optically pumped semiconductor lasers,” Proc. SPIE 6451, 645109 (2007).
    [Crossref]
  9. J.-Y. Kim, S. Cho, S.-M. Lee, G. B. Kim, J. Lee, J. Yoo, K.-S. Kim, T. Kim, and Y. Park, “Highly efficient green VECSEL with intra-cavity diamond heat spreader,” Electron. Lett. 43(2), 105 (2007).
    [Crossref]
  10. E. Kantola, T. Leinonen, S. Ranta, M. Tavast, and M. Guina, “High-efficiency 20 W yellow VECSEL,” Opt. Express 22(6), 6372–6380 (2014).
    [Crossref] [PubMed]
  11. H. Kahle, R. Bek, M. Heldmaier, T. Schwarzbäck, M. Jetter, and P. Michler, “High optical output power in the UVA range of a frequency-doubled, strain-compensated AlGaInP-VECSEL,” Appl. Phys. Express 7(9), 092705 (2014).
    [Crossref]
  12. M. Guina, T. Leinonen, A. Härkönen, and M. Pessa, “High-power disk lasers based on dilute nitride heterostructures,” New J. Phys. 11(12), 125019 (2009).
    [Crossref]
  13. V.-M. Korpijärvi, E. L. Kantola, T. Leinonen, R. Isoaho, and M. Guina, “Monolithic GaInNAsSb/GaAs VECSEL operating at 1550 nm,” IEEE J. Sel. Top. Quantum Electron. 21(6), 1700705 (2015).
    [Crossref]
  14. V.-M. Korpijärvi, T. Leinonen, J. Puustinen, A. Härkönen, and M. D. Guina, “11 W single gain-chip dilute nitride disk laser emitting around 1180 nm,” Opt. Express 18(25), 25633–25641 (2010).
    [Crossref] [PubMed]
  15. J. Rautiainen, A. Härkönen, V. Korpijärvi, J. Puustinen, L. Orsila, M. Guina, and O. Okhotnikov, “Red and UV generation using frequency-converted GaInNAs-based semiconductor disk laser,” in Conference on Lasers and Electro-Optics/International Quantum Electronics Conference, OSA Technical Digest (CD) (OSA, 2009), paper CMRR7.
    [Crossref]

2015 (2)

K. Kuramoto, T. Nishida, S. Abe, M. Miyashita, K. Mori, and T. Yagi, “High power operation of AlGaInP red laser diode for display applications,” Proc. SPIE 9348, 93480H (2015).
[Crossref]

V.-M. Korpijärvi, E. L. Kantola, T. Leinonen, R. Isoaho, and M. Guina, “Monolithic GaInNAsSb/GaAs VECSEL operating at 1550 nm,” IEEE J. Sel. Top. Quantum Electron. 21(6), 1700705 (2015).
[Crossref]

2014 (3)

L. Toikkanen, A. Härkönen, J. Lyytikäinen, T. Leinonen, A. Tukiainen, J. Viheriälä, M. Bister, and M. Guina, “Optically pumped edge-emitting GaAs laser with direct orange emission,” IEEE Photonics Technol. Lett. 26(4), 384–386 (2014).
[Crossref]

E. Kantola, T. Leinonen, S. Ranta, M. Tavast, and M. Guina, “High-efficiency 20 W yellow VECSEL,” Opt. Express 22(6), 6372–6380 (2014).
[Crossref] [PubMed]

H. Kahle, R. Bek, M. Heldmaier, T. Schwarzbäck, M. Jetter, and P. Michler, “High optical output power in the UVA range of a frequency-doubled, strain-compensated AlGaInP-VECSEL,” Appl. Phys. Express 7(9), 092705 (2014).
[Crossref]

2013 (1)

W. J. Alford, G. J. Fetzer, R. J. Epstein, A. Sandalphon, N. Van Lieu, S. Ranta, M. Tavast, T. Leinonen, and M. Guina, “Optically pumped semiconductor lasers for precision spectroscopic applications,” IEEE J. Quantum Electron. 49(8), 719–727 (2013).
[Crossref]

2012 (2)

S. Ranta, M. Tavast, T. Leinonen, T. Epstein, and M. Guina, “Narrow linewidth 1118/559 nm VECSEL based on strain compensated GaInAs/GaAs quantum-wells for laser cooling of Mg-ions,” Opt. Mater. Express 2(8), 1011–1019 (2012).
[Crossref]

C. Hessenius, P. Y. Guinet, M. Lukowski, J. Moloney, and M. Fallahi, “589-nm single-frequency VECSEL for sodium guidestar applications,” Proc. SPIE 8242, 82420E (2012).
[Crossref]

2010 (1)

2009 (2)

S. Calvez, J. E. Hastie, M. Guina, O. G. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photonics Rev. 3(5), 1–28 (2009).
[Crossref]

M. Guina, T. Leinonen, A. Härkönen, and M. Pessa, “High-power disk lasers based on dilute nitride heterostructures,” New J. Phys. 11(12), 125019 (2009).
[Crossref]

2007 (2)

J. L. A. Chilla, Q. Shu, H. Zhou, E. S. Weiss, M. K. Reed, and L. Spinelli, “Recent advances in optically pumped semiconductor lasers,” Proc. SPIE 6451, 645109 (2007).
[Crossref]

J.-Y. Kim, S. Cho, S.-M. Lee, G. B. Kim, J. Lee, J. Yoo, K.-S. Kim, T. Kim, and Y. Park, “Highly efficient green VECSEL with intra-cavity diamond heat spreader,” Electron. Lett. 43(2), 105 (2007).
[Crossref]

1999 (1)

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “Design and characteristics of high-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 Beams,” IEEE J. Sel. Top. Quantum Electron. 5(3), 561–573 (1999).
[Crossref]

Abe, S.

K. Kuramoto, T. Nishida, S. Abe, M. Miyashita, K. Mori, and T. Yagi, “High power operation of AlGaInP red laser diode for display applications,” Proc. SPIE 9348, 93480H (2015).
[Crossref]

Alford, W. J.

W. J. Alford, G. J. Fetzer, R. J. Epstein, A. Sandalphon, N. Van Lieu, S. Ranta, M. Tavast, T. Leinonen, and M. Guina, “Optically pumped semiconductor lasers for precision spectroscopic applications,” IEEE J. Quantum Electron. 49(8), 719–727 (2013).
[Crossref]

Bek, R.

H. Kahle, R. Bek, M. Heldmaier, T. Schwarzbäck, M. Jetter, and P. Michler, “High optical output power in the UVA range of a frequency-doubled, strain-compensated AlGaInP-VECSEL,” Appl. Phys. Express 7(9), 092705 (2014).
[Crossref]

Bister, M.

L. Toikkanen, A. Härkönen, J. Lyytikäinen, T. Leinonen, A. Tukiainen, J. Viheriälä, M. Bister, and M. Guina, “Optically pumped edge-emitting GaAs laser with direct orange emission,” IEEE Photonics Technol. Lett. 26(4), 384–386 (2014).
[Crossref]

Calvez, S.

S. Calvez, J. E. Hastie, M. Guina, O. G. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photonics Rev. 3(5), 1–28 (2009).
[Crossref]

Chilla, J. L. A.

J. L. A. Chilla, Q. Shu, H. Zhou, E. S. Weiss, M. K. Reed, and L. Spinelli, “Recent advances in optically pumped semiconductor lasers,” Proc. SPIE 6451, 645109 (2007).
[Crossref]

Cho, S.

J.-Y. Kim, S. Cho, S.-M. Lee, G. B. Kim, J. Lee, J. Yoo, K.-S. Kim, T. Kim, and Y. Park, “Highly efficient green VECSEL with intra-cavity diamond heat spreader,” Electron. Lett. 43(2), 105 (2007).
[Crossref]

Dawson, M. D.

S. Calvez, J. E. Hastie, M. Guina, O. G. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photonics Rev. 3(5), 1–28 (2009).
[Crossref]

Epstein, R. J.

W. J. Alford, G. J. Fetzer, R. J. Epstein, A. Sandalphon, N. Van Lieu, S. Ranta, M. Tavast, T. Leinonen, and M. Guina, “Optically pumped semiconductor lasers for precision spectroscopic applications,” IEEE J. Quantum Electron. 49(8), 719–727 (2013).
[Crossref]

Epstein, T.

Fallahi, M.

C. Hessenius, P. Y. Guinet, M. Lukowski, J. Moloney, and M. Fallahi, “589-nm single-frequency VECSEL for sodium guidestar applications,” Proc. SPIE 8242, 82420E (2012).
[Crossref]

Fetzer, G. J.

W. J. Alford, G. J. Fetzer, R. J. Epstein, A. Sandalphon, N. Van Lieu, S. Ranta, M. Tavast, T. Leinonen, and M. Guina, “Optically pumped semiconductor lasers for precision spectroscopic applications,” IEEE J. Quantum Electron. 49(8), 719–727 (2013).
[Crossref]

Guina, M.

V.-M. Korpijärvi, E. L. Kantola, T. Leinonen, R. Isoaho, and M. Guina, “Monolithic GaInNAsSb/GaAs VECSEL operating at 1550 nm,” IEEE J. Sel. Top. Quantum Electron. 21(6), 1700705 (2015).
[Crossref]

L. Toikkanen, A. Härkönen, J. Lyytikäinen, T. Leinonen, A. Tukiainen, J. Viheriälä, M. Bister, and M. Guina, “Optically pumped edge-emitting GaAs laser with direct orange emission,” IEEE Photonics Technol. Lett. 26(4), 384–386 (2014).
[Crossref]

E. Kantola, T. Leinonen, S. Ranta, M. Tavast, and M. Guina, “High-efficiency 20 W yellow VECSEL,” Opt. Express 22(6), 6372–6380 (2014).
[Crossref] [PubMed]

W. J. Alford, G. J. Fetzer, R. J. Epstein, A. Sandalphon, N. Van Lieu, S. Ranta, M. Tavast, T. Leinonen, and M. Guina, “Optically pumped semiconductor lasers for precision spectroscopic applications,” IEEE J. Quantum Electron. 49(8), 719–727 (2013).
[Crossref]

S. Ranta, M. Tavast, T. Leinonen, T. Epstein, and M. Guina, “Narrow linewidth 1118/559 nm VECSEL based on strain compensated GaInAs/GaAs quantum-wells for laser cooling of Mg-ions,” Opt. Mater. Express 2(8), 1011–1019 (2012).
[Crossref]

S. Calvez, J. E. Hastie, M. Guina, O. G. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photonics Rev. 3(5), 1–28 (2009).
[Crossref]

M. Guina, T. Leinonen, A. Härkönen, and M. Pessa, “High-power disk lasers based on dilute nitride heterostructures,” New J. Phys. 11(12), 125019 (2009).
[Crossref]

Guina, M. D.

Guinet, P. Y.

C. Hessenius, P. Y. Guinet, M. Lukowski, J. Moloney, and M. Fallahi, “589-nm single-frequency VECSEL for sodium guidestar applications,” Proc. SPIE 8242, 82420E (2012).
[Crossref]

Hakimi, F.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “Design and characteristics of high-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 Beams,” IEEE J. Sel. Top. Quantum Electron. 5(3), 561–573 (1999).
[Crossref]

Härkönen, A.

L. Toikkanen, A. Härkönen, J. Lyytikäinen, T. Leinonen, A. Tukiainen, J. Viheriälä, M. Bister, and M. Guina, “Optically pumped edge-emitting GaAs laser with direct orange emission,” IEEE Photonics Technol. Lett. 26(4), 384–386 (2014).
[Crossref]

V.-M. Korpijärvi, T. Leinonen, J. Puustinen, A. Härkönen, and M. D. Guina, “11 W single gain-chip dilute nitride disk laser emitting around 1180 nm,” Opt. Express 18(25), 25633–25641 (2010).
[Crossref] [PubMed]

M. Guina, T. Leinonen, A. Härkönen, and M. Pessa, “High-power disk lasers based on dilute nitride heterostructures,” New J. Phys. 11(12), 125019 (2009).
[Crossref]

Hastie, J. E.

S. Calvez, J. E. Hastie, M. Guina, O. G. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photonics Rev. 3(5), 1–28 (2009).
[Crossref]

Heldmaier, M.

H. Kahle, R. Bek, M. Heldmaier, T. Schwarzbäck, M. Jetter, and P. Michler, “High optical output power in the UVA range of a frequency-doubled, strain-compensated AlGaInP-VECSEL,” Appl. Phys. Express 7(9), 092705 (2014).
[Crossref]

Hessenius, C.

C. Hessenius, P. Y. Guinet, M. Lukowski, J. Moloney, and M. Fallahi, “589-nm single-frequency VECSEL for sodium guidestar applications,” Proc. SPIE 8242, 82420E (2012).
[Crossref]

Isoaho, R.

V.-M. Korpijärvi, E. L. Kantola, T. Leinonen, R. Isoaho, and M. Guina, “Monolithic GaInNAsSb/GaAs VECSEL operating at 1550 nm,” IEEE J. Sel. Top. Quantum Electron. 21(6), 1700705 (2015).
[Crossref]

Jetter, M.

H. Kahle, R. Bek, M. Heldmaier, T. Schwarzbäck, M. Jetter, and P. Michler, “High optical output power in the UVA range of a frequency-doubled, strain-compensated AlGaInP-VECSEL,” Appl. Phys. Express 7(9), 092705 (2014).
[Crossref]

Kahle, H.

H. Kahle, R. Bek, M. Heldmaier, T. Schwarzbäck, M. Jetter, and P. Michler, “High optical output power in the UVA range of a frequency-doubled, strain-compensated AlGaInP-VECSEL,” Appl. Phys. Express 7(9), 092705 (2014).
[Crossref]

Kantola, E.

Kantola, E. L.

V.-M. Korpijärvi, E. L. Kantola, T. Leinonen, R. Isoaho, and M. Guina, “Monolithic GaInNAsSb/GaAs VECSEL operating at 1550 nm,” IEEE J. Sel. Top. Quantum Electron. 21(6), 1700705 (2015).
[Crossref]

Kim, G. B.

J.-Y. Kim, S. Cho, S.-M. Lee, G. B. Kim, J. Lee, J. Yoo, K.-S. Kim, T. Kim, and Y. Park, “Highly efficient green VECSEL with intra-cavity diamond heat spreader,” Electron. Lett. 43(2), 105 (2007).
[Crossref]

Kim, J.-Y.

J.-Y. Kim, S. Cho, S.-M. Lee, G. B. Kim, J. Lee, J. Yoo, K.-S. Kim, T. Kim, and Y. Park, “Highly efficient green VECSEL with intra-cavity diamond heat spreader,” Electron. Lett. 43(2), 105 (2007).
[Crossref]

Kim, K.-S.

J.-Y. Kim, S. Cho, S.-M. Lee, G. B. Kim, J. Lee, J. Yoo, K.-S. Kim, T. Kim, and Y. Park, “Highly efficient green VECSEL with intra-cavity diamond heat spreader,” Electron. Lett. 43(2), 105 (2007).
[Crossref]

Kim, T.

J.-Y. Kim, S. Cho, S.-M. Lee, G. B. Kim, J. Lee, J. Yoo, K.-S. Kim, T. Kim, and Y. Park, “Highly efficient green VECSEL with intra-cavity diamond heat spreader,” Electron. Lett. 43(2), 105 (2007).
[Crossref]

Korpijärvi, V.-M.

V.-M. Korpijärvi, E. L. Kantola, T. Leinonen, R. Isoaho, and M. Guina, “Monolithic GaInNAsSb/GaAs VECSEL operating at 1550 nm,” IEEE J. Sel. Top. Quantum Electron. 21(6), 1700705 (2015).
[Crossref]

V.-M. Korpijärvi, T. Leinonen, J. Puustinen, A. Härkönen, and M. D. Guina, “11 W single gain-chip dilute nitride disk laser emitting around 1180 nm,” Opt. Express 18(25), 25633–25641 (2010).
[Crossref] [PubMed]

Kuramoto, K.

K. Kuramoto, T. Nishida, S. Abe, M. Miyashita, K. Mori, and T. Yagi, “High power operation of AlGaInP red laser diode for display applications,” Proc. SPIE 9348, 93480H (2015).
[Crossref]

Kuznetsov, M.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “Design and characteristics of high-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 Beams,” IEEE J. Sel. Top. Quantum Electron. 5(3), 561–573 (1999).
[Crossref]

Lee, J.

J.-Y. Kim, S. Cho, S.-M. Lee, G. B. Kim, J. Lee, J. Yoo, K.-S. Kim, T. Kim, and Y. Park, “Highly efficient green VECSEL with intra-cavity diamond heat spreader,” Electron. Lett. 43(2), 105 (2007).
[Crossref]

Lee, S.-M.

J.-Y. Kim, S. Cho, S.-M. Lee, G. B. Kim, J. Lee, J. Yoo, K.-S. Kim, T. Kim, and Y. Park, “Highly efficient green VECSEL with intra-cavity diamond heat spreader,” Electron. Lett. 43(2), 105 (2007).
[Crossref]

Leinonen, T.

V.-M. Korpijärvi, E. L. Kantola, T. Leinonen, R. Isoaho, and M. Guina, “Monolithic GaInNAsSb/GaAs VECSEL operating at 1550 nm,” IEEE J. Sel. Top. Quantum Electron. 21(6), 1700705 (2015).
[Crossref]

E. Kantola, T. Leinonen, S. Ranta, M. Tavast, and M. Guina, “High-efficiency 20 W yellow VECSEL,” Opt. Express 22(6), 6372–6380 (2014).
[Crossref] [PubMed]

L. Toikkanen, A. Härkönen, J. Lyytikäinen, T. Leinonen, A. Tukiainen, J. Viheriälä, M. Bister, and M. Guina, “Optically pumped edge-emitting GaAs laser with direct orange emission,” IEEE Photonics Technol. Lett. 26(4), 384–386 (2014).
[Crossref]

W. J. Alford, G. J. Fetzer, R. J. Epstein, A. Sandalphon, N. Van Lieu, S. Ranta, M. Tavast, T. Leinonen, and M. Guina, “Optically pumped semiconductor lasers for precision spectroscopic applications,” IEEE J. Quantum Electron. 49(8), 719–727 (2013).
[Crossref]

S. Ranta, M. Tavast, T. Leinonen, T. Epstein, and M. Guina, “Narrow linewidth 1118/559 nm VECSEL based on strain compensated GaInAs/GaAs quantum-wells for laser cooling of Mg-ions,” Opt. Mater. Express 2(8), 1011–1019 (2012).
[Crossref]

V.-M. Korpijärvi, T. Leinonen, J. Puustinen, A. Härkönen, and M. D. Guina, “11 W single gain-chip dilute nitride disk laser emitting around 1180 nm,” Opt. Express 18(25), 25633–25641 (2010).
[Crossref] [PubMed]

M. Guina, T. Leinonen, A. Härkönen, and M. Pessa, “High-power disk lasers based on dilute nitride heterostructures,” New J. Phys. 11(12), 125019 (2009).
[Crossref]

Lukowski, M.

C. Hessenius, P. Y. Guinet, M. Lukowski, J. Moloney, and M. Fallahi, “589-nm single-frequency VECSEL for sodium guidestar applications,” Proc. SPIE 8242, 82420E (2012).
[Crossref]

Lyytikäinen, J.

L. Toikkanen, A. Härkönen, J. Lyytikäinen, T. Leinonen, A. Tukiainen, J. Viheriälä, M. Bister, and M. Guina, “Optically pumped edge-emitting GaAs laser with direct orange emission,” IEEE Photonics Technol. Lett. 26(4), 384–386 (2014).
[Crossref]

Michler, P.

H. Kahle, R. Bek, M. Heldmaier, T. Schwarzbäck, M. Jetter, and P. Michler, “High optical output power in the UVA range of a frequency-doubled, strain-compensated AlGaInP-VECSEL,” Appl. Phys. Express 7(9), 092705 (2014).
[Crossref]

Miyashita, M.

K. Kuramoto, T. Nishida, S. Abe, M. Miyashita, K. Mori, and T. Yagi, “High power operation of AlGaInP red laser diode for display applications,” Proc. SPIE 9348, 93480H (2015).
[Crossref]

Moloney, J.

C. Hessenius, P. Y. Guinet, M. Lukowski, J. Moloney, and M. Fallahi, “589-nm single-frequency VECSEL for sodium guidestar applications,” Proc. SPIE 8242, 82420E (2012).
[Crossref]

Mooradian, A.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “Design and characteristics of high-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 Beams,” IEEE J. Sel. Top. Quantum Electron. 5(3), 561–573 (1999).
[Crossref]

Mori, K.

K. Kuramoto, T. Nishida, S. Abe, M. Miyashita, K. Mori, and T. Yagi, “High power operation of AlGaInP red laser diode for display applications,” Proc. SPIE 9348, 93480H (2015).
[Crossref]

Nishida, T.

K. Kuramoto, T. Nishida, S. Abe, M. Miyashita, K. Mori, and T. Yagi, “High power operation of AlGaInP red laser diode for display applications,” Proc. SPIE 9348, 93480H (2015).
[Crossref]

Okhotnikov, O. G.

S. Calvez, J. E. Hastie, M. Guina, O. G. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photonics Rev. 3(5), 1–28 (2009).
[Crossref]

Park, Y.

J.-Y. Kim, S. Cho, S.-M. Lee, G. B. Kim, J. Lee, J. Yoo, K.-S. Kim, T. Kim, and Y. Park, “Highly efficient green VECSEL with intra-cavity diamond heat spreader,” Electron. Lett. 43(2), 105 (2007).
[Crossref]

Pessa, M.

M. Guina, T. Leinonen, A. Härkönen, and M. Pessa, “High-power disk lasers based on dilute nitride heterostructures,” New J. Phys. 11(12), 125019 (2009).
[Crossref]

Puustinen, J.

Ranta, S.

Reed, M. K.

J. L. A. Chilla, Q. Shu, H. Zhou, E. S. Weiss, M. K. Reed, and L. Spinelli, “Recent advances in optically pumped semiconductor lasers,” Proc. SPIE 6451, 645109 (2007).
[Crossref]

Sandalphon, A.

W. J. Alford, G. J. Fetzer, R. J. Epstein, A. Sandalphon, N. Van Lieu, S. Ranta, M. Tavast, T. Leinonen, and M. Guina, “Optically pumped semiconductor lasers for precision spectroscopic applications,” IEEE J. Quantum Electron. 49(8), 719–727 (2013).
[Crossref]

Schwarzbäck, T.

H. Kahle, R. Bek, M. Heldmaier, T. Schwarzbäck, M. Jetter, and P. Michler, “High optical output power in the UVA range of a frequency-doubled, strain-compensated AlGaInP-VECSEL,” Appl. Phys. Express 7(9), 092705 (2014).
[Crossref]

Shu, Q.

J. L. A. Chilla, Q. Shu, H. Zhou, E. S. Weiss, M. K. Reed, and L. Spinelli, “Recent advances in optically pumped semiconductor lasers,” Proc. SPIE 6451, 645109 (2007).
[Crossref]

Spinelli, L.

J. L. A. Chilla, Q. Shu, H. Zhou, E. S. Weiss, M. K. Reed, and L. Spinelli, “Recent advances in optically pumped semiconductor lasers,” Proc. SPIE 6451, 645109 (2007).
[Crossref]

Sprague, R.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “Design and characteristics of high-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 Beams,” IEEE J. Sel. Top. Quantum Electron. 5(3), 561–573 (1999).
[Crossref]

Tavast, M.

Toikkanen, L.

L. Toikkanen, A. Härkönen, J. Lyytikäinen, T. Leinonen, A. Tukiainen, J. Viheriälä, M. Bister, and M. Guina, “Optically pumped edge-emitting GaAs laser with direct orange emission,” IEEE Photonics Technol. Lett. 26(4), 384–386 (2014).
[Crossref]

Tukiainen, A.

L. Toikkanen, A. Härkönen, J. Lyytikäinen, T. Leinonen, A. Tukiainen, J. Viheriälä, M. Bister, and M. Guina, “Optically pumped edge-emitting GaAs laser with direct orange emission,” IEEE Photonics Technol. Lett. 26(4), 384–386 (2014).
[Crossref]

Van Lieu, N.

W. J. Alford, G. J. Fetzer, R. J. Epstein, A. Sandalphon, N. Van Lieu, S. Ranta, M. Tavast, T. Leinonen, and M. Guina, “Optically pumped semiconductor lasers for precision spectroscopic applications,” IEEE J. Quantum Electron. 49(8), 719–727 (2013).
[Crossref]

Viheriälä, J.

L. Toikkanen, A. Härkönen, J. Lyytikäinen, T. Leinonen, A. Tukiainen, J. Viheriälä, M. Bister, and M. Guina, “Optically pumped edge-emitting GaAs laser with direct orange emission,” IEEE Photonics Technol. Lett. 26(4), 384–386 (2014).
[Crossref]

Weiss, E. S.

J. L. A. Chilla, Q. Shu, H. Zhou, E. S. Weiss, M. K. Reed, and L. Spinelli, “Recent advances in optically pumped semiconductor lasers,” Proc. SPIE 6451, 645109 (2007).
[Crossref]

Yagi, T.

K. Kuramoto, T. Nishida, S. Abe, M. Miyashita, K. Mori, and T. Yagi, “High power operation of AlGaInP red laser diode for display applications,” Proc. SPIE 9348, 93480H (2015).
[Crossref]

Yoo, J.

J.-Y. Kim, S. Cho, S.-M. Lee, G. B. Kim, J. Lee, J. Yoo, K.-S. Kim, T. Kim, and Y. Park, “Highly efficient green VECSEL with intra-cavity diamond heat spreader,” Electron. Lett. 43(2), 105 (2007).
[Crossref]

Zhou, H.

J. L. A. Chilla, Q. Shu, H. Zhou, E. S. Weiss, M. K. Reed, and L. Spinelli, “Recent advances in optically pumped semiconductor lasers,” Proc. SPIE 6451, 645109 (2007).
[Crossref]

Appl. Phys. Express (1)

H. Kahle, R. Bek, M. Heldmaier, T. Schwarzbäck, M. Jetter, and P. Michler, “High optical output power in the UVA range of a frequency-doubled, strain-compensated AlGaInP-VECSEL,” Appl. Phys. Express 7(9), 092705 (2014).
[Crossref]

Electron. Lett. (1)

J.-Y. Kim, S. Cho, S.-M. Lee, G. B. Kim, J. Lee, J. Yoo, K.-S. Kim, T. Kim, and Y. Park, “Highly efficient green VECSEL with intra-cavity diamond heat spreader,” Electron. Lett. 43(2), 105 (2007).
[Crossref]

IEEE J. Quantum Electron. (1)

W. J. Alford, G. J. Fetzer, R. J. Epstein, A. Sandalphon, N. Van Lieu, S. Ranta, M. Tavast, T. Leinonen, and M. Guina, “Optically pumped semiconductor lasers for precision spectroscopic applications,” IEEE J. Quantum Electron. 49(8), 719–727 (2013).
[Crossref]

IEEE J. Sel. Top. Quantum Electron. (2)

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “Design and characteristics of high-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 Beams,” IEEE J. Sel. Top. Quantum Electron. 5(3), 561–573 (1999).
[Crossref]

V.-M. Korpijärvi, E. L. Kantola, T. Leinonen, R. Isoaho, and M. Guina, “Monolithic GaInNAsSb/GaAs VECSEL operating at 1550 nm,” IEEE J. Sel. Top. Quantum Electron. 21(6), 1700705 (2015).
[Crossref]

IEEE Photonics Technol. Lett. (1)

L. Toikkanen, A. Härkönen, J. Lyytikäinen, T. Leinonen, A. Tukiainen, J. Viheriälä, M. Bister, and M. Guina, “Optically pumped edge-emitting GaAs laser with direct orange emission,” IEEE Photonics Technol. Lett. 26(4), 384–386 (2014).
[Crossref]

Laser Photonics Rev. (1)

S. Calvez, J. E. Hastie, M. Guina, O. G. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photonics Rev. 3(5), 1–28 (2009).
[Crossref]

New J. Phys. (1)

M. Guina, T. Leinonen, A. Härkönen, and M. Pessa, “High-power disk lasers based on dilute nitride heterostructures,” New J. Phys. 11(12), 125019 (2009).
[Crossref]

Opt. Express (2)

Opt. Mater. Express (1)

Proc. SPIE (3)

C. Hessenius, P. Y. Guinet, M. Lukowski, J. Moloney, and M. Fallahi, “589-nm single-frequency VECSEL for sodium guidestar applications,” Proc. SPIE 8242, 82420E (2012).
[Crossref]

J. L. A. Chilla, Q. Shu, H. Zhou, E. S. Weiss, M. K. Reed, and L. Spinelli, “Recent advances in optically pumped semiconductor lasers,” Proc. SPIE 6451, 645109 (2007).
[Crossref]

K. Kuramoto, T. Nishida, S. Abe, M. Miyashita, K. Mori, and T. Yagi, “High power operation of AlGaInP red laser diode for display applications,” Proc. SPIE 9348, 93480H (2015).
[Crossref]

Other (1)

J. Rautiainen, A. Härkönen, V. Korpijärvi, J. Puustinen, L. Orsila, M. Guina, and O. Okhotnikov, “Red and UV generation using frequency-converted GaInNAs-based semiconductor disk laser,” in Conference on Lasers and Electro-Optics/International Quantum Electronics Conference, OSA Technical Digest (CD) (OSA, 2009), paper CMRR7.
[Crossref]

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Figures (8)

Fig. 1
Fig. 1 Schematic illustration of the active region of the gain chip. The In and N compositions were x ~35% and y ~0.5%, respectively.
Fig. 2
Fig. 2 Illustration of the VECSEL configuration used for measuring the transmittance of the HR cavity end-mirror and long-wave-pass filter (λ > 900 nm). The HR cavity end-mirror is represented by the mirror inside the dashed box and is not part of the VECSEL cavity.
Fig. 3
Fig. 3 Transmittance of the HR cavity end-mirror, Tmirror, and the long-wave-pass filter, Tfilter, (λ > 900 nm) as a function of wavelength.
Fig. 4
Fig. 4 Schematic illustration of the frequency doubled red VECSEL.
Fig. 5
Fig. 5 Output power curve for red emission (output power vs. absorbed pump power). Insets: Output spectrum for red emission and lateral beam profile measured at 7 W.
Fig. 6
Fig. 6 Intra-cavity power (blue circles) and single-pass conversion efficiency (red squares) of the nonlinear crystal (LBO) vs. absorbed pump power.
Fig. 7
Fig. 7 Pulse waveforms for the pulsed pump laser (black trace) and the red VECSEL output (red) recorded at maximum frequency doubled output for 1.5 µs pulse width setting.
Fig. 8
Fig. 8 (a) Output power curves for continuous wave (red circles) and pulsed mode (blue triangles) when the mount temperature was ~20 °C. (b) Output spectrum for the red VECSEL measured at the maximum pulsed pump power.

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