Abstract

In the current paper we apply catalyst assisted vapour phase growth technique to grow ZnO nanowires (ZnO nws) on p-GaN thin film obtaining EL emission in reverse bias regime. ZnO based LED represents a promising alternative to III-nitride LEDs, as in free devices: the potential is in near-UV emission and visible emission. For ZnO, the use of nanowires ensures good crystallinity of the ZnO, and improved light extraction from the interface when the nanowires are vertically aligned. We prepared ZnO nanowires in a tubular furnace on GaN templates and characterized the p-n ZnO nws/GaN heterojunction for LED applications. SEM microscopy was used to study the growth of nanowires and device preparation. Photoluminescence (PL) and Electroluminescence (EL) spectroscopies were used to characterize the heterojunction, showing that good quality of PL emission is observed from nanowires and visible emission from the junction can be obtained from the region near ZnO contact, starting from onset bias of 6V.

© 2015 Optical Society of America

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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
  28. M. Kaufmann, M. Kunzer, M. Maier, H. Obloh, A. Ramakrishnan, B. Santic, and P. Schlotter, “Nature of the 2.8 eV photoluminescence band in Mg doped GaN”,” Appl. Phys. Lett. 72(11), 1326–1328 (1998).
    [Crossref]
  29. Unpublished results.
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    [Crossref] [PubMed]

2014 (1)

Q.-M. Fu, W. Cao, G.-W. Li, Z.-D. Lin, Z. Chen, C.-B. Xu, Y.-F. Tu, and Z.-B. Ma, “Blue/green electroluminescence from a ZnO nanorods/p-GaN heterojunction light emitting diode under different reverse bias,” Appl. Surf. Sci. 293, 225–228 (2014).
[Crossref]

2013 (3)

2012 (2)

A. Vomiero, I. Concina, E. Comini, C. Soldano, M. Ferroni, G. Faglia, and G. Sberveglieri, “One-dimensional nanostructured oxides for thermoelectric applications and excitonic solar cells,” Nano Energy 1(3), 372–390 (2012).
[Crossref]

C. Soldano, E. Comini, C. Baratto, M. Ferroni, G. Faglia, and G. Sberveglieri, “Metal oxides mono-dimensional nanostructures for gas sensing and light Emission,” J. Am. Ceram. Soc. 95(3), 831–850 (2012).

2011 (1)

S. Jha, J. C. Qian, O. Kutsay, J. Kovac, C. Y. Luan, J. A. Zapien, W. Zhang, S. T. Lee, and I. Bello, “Violet-blue LEDs based on p-GaN/n-ZnO nanorods and their stability,” Nanotechnology 22(24), 245202 (2011).
[Crossref] [PubMed]

2010 (3)

A. A. Talin, F. Leonard, A. M. Katzenmeyer, B. S. Swartzentruber, S. T. Picraux, M. E. Toimil-Molares, J. G. Cederberg, X. Wang, S. D. Hersee, and A. Rishinaramangalum, “Transport characterization in nanowires using an electrical nanoprobe,” Semi. Sci. and Tech. 25(2), 024015 (2010).
[Crossref]

S. Xu, C. Xu, Y. Liu, Y. Hu, R. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
[Crossref] [PubMed]

O. Lupan, T. Pauporté, and B. Viana, “Low-voltage UV-electroluminescence from ZnO-nanowire Array/p-GaN light-emitting diodes,” Adv. Mater. 22(30), 3298–3302 (2010).
[Crossref] [PubMed]

2009 (2)

R. Guo, J. Nishimura, M. Matsumoto, M. Higashihata, D. Nakamura, and T. Okada, “Electroluminescence from ZnO nanowire-based p-GaN/n-ZnO heterojunction light-emitting diodes,” Appl. Phys. B 94(1), 33–38 (2009).
[Crossref]

X. M. Zhang, M. Y. Lu, Y. Zhang, L. J. Chen, and Z. L. Wang, “Fabrication of a high-brightness blue-light-emitting diode using a ZnO-nanowire array grown on p-GaN thin film,” Adv. Mater. 21(27), 2767–2770 (2009).
[Crossref]

2008 (2)

E. Lai, W. Kim, and P. Yang, “Vertical nanowire array-based light emitting diodes,” Nano Res. 1(2), 123–128 (2008).
[Crossref]

M. A. Zimmler, J. M. Bao, F. Capasso, S. Müller, and C. Ronning, “Laser action in nanowires observation of the transition from amplified spontaneous emission to laser oscillation,” Appl. Phys. Lett. 93(5), 051101 (2008).
[Crossref]

2007 (3)

J. Zhong, H. Chen, G. Saraf, Y. Lu, C. K. Choi, J. J. Song, D. M. Mackie, and H. Shen, “Integrated ZnO nanotips on GaN light emitting diodes for enhanced emission efficiency,” Appl. Phys. Lett. 90(20), 203515 (2007).
[Crossref]

J. D. Prades, A. Cirera, J. R. Morante, and A. Cornet, “An insight into the visible luminescent properties of ZnO,” Thin Solid Films 515(24), 8670–8673 (2007).
[Crossref]

E. Comini, C. Baratto, G. Faglia, M. Ferroni, and G. Sberveglieri, “Single crystal ZnO nanowires as optical and conductometric chemical sensor,” J. Phys. D 40(23), 7255–7259 (2007).
[Crossref]

2006 (1)

M. C. Jeong, B. Y. Oh, M. H. Ham, and J. M. Myoung, “Electroluminescence from ZnO nanowires in n-ZnO film/ZnO nanowire array/p-GaN film heterojunction light-emitting diodes,” Appl. Phys. Lett. 88(20), 202105 (2006).
[Crossref]

2004 (2)

W. I. Park and G. C. Yi, “Electroluminescence in n-ZnO nanorod arrays vertically grown on p-GaN,” Adv. Mater. 16(1), 87–90 (2004).
[Crossref]

T. Tatsumi, M. Fujita, N. Kawamoto, M. Sasajima, and Y. Horikoshi, “Intrinsic Defects in ZnO Films Grown by Molecular Beam Epitaxy,” Jpn. J. Appl. Phys. 43(5A), 2602–2606 (2004).
[Crossref]

2003 (2)

J. W. Hu and Y. Bando, “Growth and optical properties of single-crystal tubular ZnO whiskers,” Appl. Phys. Lett. 82(9), 1401–1403 (2003).
[Crossref]

J. W. Hu and Y. Bando, “Growth and optical properties of single-crystal tubular ZnO whiskers,” Appl. Phys. Lett. 82(9), 1401–1403 (2003).
[Crossref]

2002 (1)

S. A. Studenikin and M. Cocivera, “Time-resolved luminescence and photoconductivity of polycrystalline ZnO films,” J. Appl. Phys. 91(8), 5060 (2002).
[Crossref]

2001 (1)

B. Lin, Z. Fu, and Y. Jia, “Green luminescent center in undoped zinc oxide films deposited on silicon substrates,” Appl. Phys. Lett. 79(7), 943–945 (2001).
[Crossref]

2000 (1)

A. van Dijken, E. A. Meulenkamp, D. Vanmaekelbergh, and A. Meijerink, “The luminescence of nanocrystalline ZnO particles: the mechanism of the ultraviolet and visible emission,” J. Lumin. 87–89, 454–456 (2000).
[Crossref]

1999 (1)

U. Kaufmann, M. Kunzer, H. Obloh, M. Maier, C. Manz, A. Ramakrishnan, and B. Santic, “Origin of defect-related photoluminescence bands in doped and nominally undoped GaN,” Phys. Rev. B 59(8), 5561–5567 (1999).
[Crossref]

1998 (1)

M. Kaufmann, M. Kunzer, M. Maier, H. Obloh, A. Ramakrishnan, B. Santic, and P. Schlotter, “Nature of the 2.8 eV photoluminescence band in Mg doped GaN”,” Appl. Phys. Lett. 72(11), 1326–1328 (1998).
[Crossref]

1996 (2)

K. Vanheusden, W. L. Warren, C. H. Seager, D. R. Tallant, J. A. Voigt, and B. E. Gnade, “Mechanisms behind green photoluminescence in ZnO phosphor powders,” J. Appl. Phys. 79(10), 7983–7990 (1996).
[Crossref]

K. Vanheusden, W. L. Warren, C. H. Seager, D. R. Tallant, J. A. Voigt, and B. E. Gnade, “Mechanisms behind green photoluminescence in ZnO phosphor powders,” J. Appl. Phys. 79(10), 7983–7990 (1996).
[Crossref]

Bando, Y.

J. W. Hu and Y. Bando, “Growth and optical properties of single-crystal tubular ZnO whiskers,” Appl. Phys. Lett. 82(9), 1401–1403 (2003).
[Crossref]

J. W. Hu and Y. Bando, “Growth and optical properties of single-crystal tubular ZnO whiskers,” Appl. Phys. Lett. 82(9), 1401–1403 (2003).
[Crossref]

Bao, J. M.

M. A. Zimmler, J. M. Bao, F. Capasso, S. Müller, and C. Ronning, “Laser action in nanowires observation of the transition from amplified spontaneous emission to laser oscillation,” Appl. Phys. Lett. 93(5), 051101 (2008).
[Crossref]

Baratto, C.

C. Baratto, E. Comini, M. Ferroni, G. Faglia, and G. Sberveglieri, “Plasma-induced enhancement of UV photoluminescence in ZnO nanowires,” CrystEngComm 15(39), 7981 (2013).
[Crossref]

C. Soldano, E. Comini, C. Baratto, M. Ferroni, G. Faglia, and G. Sberveglieri, “Metal oxides mono-dimensional nanostructures for gas sensing and light Emission,” J. Am. Ceram. Soc. 95(3), 831–850 (2012).

E. Comini, C. Baratto, G. Faglia, M. Ferroni, and G. Sberveglieri, “Single crystal ZnO nanowires as optical and conductometric chemical sensor,” J. Phys. D 40(23), 7255–7259 (2007).
[Crossref]

Bello, I.

S. Jha, J. C. Qian, O. Kutsay, J. Kovac, C. Y. Luan, J. A. Zapien, W. Zhang, S. T. Lee, and I. Bello, “Violet-blue LEDs based on p-GaN/n-ZnO nanorods and their stability,” Nanotechnology 22(24), 245202 (2011).
[Crossref] [PubMed]

Benz, J.

A. Kronenberger, J. Benz, P. Klement, A. Polity, D. M. Hofmann, P. J. Klar, and B. K. Meyer, “Light emission from ZnO/GaN and ZnO1−xSx/GaN p-n junctions,” Semicond. Sci. Technol. (submitted to).

Cao, W.

Q.-M. Fu, W. Cao, G.-W. Li, Z.-D. Lin, Z. Chen, C.-B. Xu, Y.-F. Tu, and Z.-B. Ma, “Blue/green electroluminescence from a ZnO nanorods/p-GaN heterojunction light emitting diode under different reverse bias,” Appl. Surf. Sci. 293, 225–228 (2014).
[Crossref]

Capasso, F.

M. A. Zimmler, J. M. Bao, F. Capasso, S. Müller, and C. Ronning, “Laser action in nanowires observation of the transition from amplified spontaneous emission to laser oscillation,” Appl. Phys. Lett. 93(5), 051101 (2008).
[Crossref]

Cederberg, J. G.

A. A. Talin, F. Leonard, A. M. Katzenmeyer, B. S. Swartzentruber, S. T. Picraux, M. E. Toimil-Molares, J. G. Cederberg, X. Wang, S. D. Hersee, and A. Rishinaramangalum, “Transport characterization in nanowires using an electrical nanoprobe,” Semi. Sci. and Tech. 25(2), 024015 (2010).
[Crossref]

Chen, H.

J. Zhong, H. Chen, G. Saraf, Y. Lu, C. K. Choi, J. J. Song, D. M. Mackie, and H. Shen, “Integrated ZnO nanotips on GaN light emitting diodes for enhanced emission efficiency,” Appl. Phys. Lett. 90(20), 203515 (2007).
[Crossref]

Chen, L. J.

X. M. Zhang, M. Y. Lu, Y. Zhang, L. J. Chen, and Z. L. Wang, “Fabrication of a high-brightness blue-light-emitting diode using a ZnO-nanowire array grown on p-GaN thin film,” Adv. Mater. 21(27), 2767–2770 (2009).
[Crossref]

Chen, Z.

Q.-M. Fu, W. Cao, G.-W. Li, Z.-D. Lin, Z. Chen, C.-B. Xu, Y.-F. Tu, and Z.-B. Ma, “Blue/green electroluminescence from a ZnO nanorods/p-GaN heterojunction light emitting diode under different reverse bias,” Appl. Surf. Sci. 293, 225–228 (2014).
[Crossref]

Choi, C. K.

J. Zhong, H. Chen, G. Saraf, Y. Lu, C. K. Choi, J. J. Song, D. M. Mackie, and H. Shen, “Integrated ZnO nanotips on GaN light emitting diodes for enhanced emission efficiency,” Appl. Phys. Lett. 90(20), 203515 (2007).
[Crossref]

Choi, S.

S. Xu, C. Xu, Y. Liu, Y. Hu, R. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
[Crossref] [PubMed]

Cirera, A.

J. D. Prades, A. Cirera, J. R. Morante, and A. Cornet, “An insight into the visible luminescent properties of ZnO,” Thin Solid Films 515(24), 8670–8673 (2007).
[Crossref]

Cocivera, M.

S. A. Studenikin and M. Cocivera, “Time-resolved luminescence and photoconductivity of polycrystalline ZnO films,” J. Appl. Phys. 91(8), 5060 (2002).
[Crossref]

Comini, E.

C. Baratto, E. Comini, M. Ferroni, G. Faglia, and G. Sberveglieri, “Plasma-induced enhancement of UV photoluminescence in ZnO nanowires,” CrystEngComm 15(39), 7981 (2013).
[Crossref]

A. Vomiero, I. Concina, E. Comini, C. Soldano, M. Ferroni, G. Faglia, and G. Sberveglieri, “One-dimensional nanostructured oxides for thermoelectric applications and excitonic solar cells,” Nano Energy 1(3), 372–390 (2012).
[Crossref]

C. Soldano, E. Comini, C. Baratto, M. Ferroni, G. Faglia, and G. Sberveglieri, “Metal oxides mono-dimensional nanostructures for gas sensing and light Emission,” J. Am. Ceram. Soc. 95(3), 831–850 (2012).

E. Comini, C. Baratto, G. Faglia, M. Ferroni, and G. Sberveglieri, “Single crystal ZnO nanowires as optical and conductometric chemical sensor,” J. Phys. D 40(23), 7255–7259 (2007).
[Crossref]

Concina, I.

A. Vomiero, I. Concina, E. Comini, C. Soldano, M. Ferroni, G. Faglia, and G. Sberveglieri, “One-dimensional nanostructured oxides for thermoelectric applications and excitonic solar cells,” Nano Energy 1(3), 372–390 (2012).
[Crossref]

Cornet, A.

J. D. Prades, A. Cirera, J. R. Morante, and A. Cornet, “An insight into the visible luminescent properties of ZnO,” Thin Solid Films 515(24), 8670–8673 (2007).
[Crossref]

Dupuis, R.

S. Xu, C. Xu, Y. Liu, Y. Hu, R. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
[Crossref] [PubMed]

Faglia, G.

C. Baratto, E. Comini, M. Ferroni, G. Faglia, and G. Sberveglieri, “Plasma-induced enhancement of UV photoluminescence in ZnO nanowires,” CrystEngComm 15(39), 7981 (2013).
[Crossref]

A. Vomiero, I. Concina, E. Comini, C. Soldano, M. Ferroni, G. Faglia, and G. Sberveglieri, “One-dimensional nanostructured oxides for thermoelectric applications and excitonic solar cells,” Nano Energy 1(3), 372–390 (2012).
[Crossref]

C. Soldano, E. Comini, C. Baratto, M. Ferroni, G. Faglia, and G. Sberveglieri, “Metal oxides mono-dimensional nanostructures for gas sensing and light Emission,” J. Am. Ceram. Soc. 95(3), 831–850 (2012).

E. Comini, C. Baratto, G. Faglia, M. Ferroni, and G. Sberveglieri, “Single crystal ZnO nanowires as optical and conductometric chemical sensor,” J. Phys. D 40(23), 7255–7259 (2007).
[Crossref]

Ferroni, M.

C. Baratto, E. Comini, M. Ferroni, G. Faglia, and G. Sberveglieri, “Plasma-induced enhancement of UV photoluminescence in ZnO nanowires,” CrystEngComm 15(39), 7981 (2013).
[Crossref]

C. Soldano, E. Comini, C. Baratto, M. Ferroni, G. Faglia, and G. Sberveglieri, “Metal oxides mono-dimensional nanostructures for gas sensing and light Emission,” J. Am. Ceram. Soc. 95(3), 831–850 (2012).

A. Vomiero, I. Concina, E. Comini, C. Soldano, M. Ferroni, G. Faglia, and G. Sberveglieri, “One-dimensional nanostructured oxides for thermoelectric applications and excitonic solar cells,” Nano Energy 1(3), 372–390 (2012).
[Crossref]

E. Comini, C. Baratto, G. Faglia, M. Ferroni, and G. Sberveglieri, “Single crystal ZnO nanowires as optical and conductometric chemical sensor,” J. Phys. D 40(23), 7255–7259 (2007).
[Crossref]

Fu, Q.-M.

Q.-M. Fu, W. Cao, G.-W. Li, Z.-D. Lin, Z. Chen, C.-B. Xu, Y.-F. Tu, and Z.-B. Ma, “Blue/green electroluminescence from a ZnO nanorods/p-GaN heterojunction light emitting diode under different reverse bias,” Appl. Surf. Sci. 293, 225–228 (2014).
[Crossref]

Fu, Z.

B. Lin, Z. Fu, and Y. Jia, “Green luminescent center in undoped zinc oxide films deposited on silicon substrates,” Appl. Phys. Lett. 79(7), 943–945 (2001).
[Crossref]

Fujita, M.

T. Tatsumi, M. Fujita, N. Kawamoto, M. Sasajima, and Y. Horikoshi, “Intrinsic Defects in ZnO Films Grown by Molecular Beam Epitaxy,” Jpn. J. Appl. Phys. 43(5A), 2602–2606 (2004).
[Crossref]

Gnade, B. E.

K. Vanheusden, W. L. Warren, C. H. Seager, D. R. Tallant, J. A. Voigt, and B. E. Gnade, “Mechanisms behind green photoluminescence in ZnO phosphor powders,” J. Appl. Phys. 79(10), 7983–7990 (1996).
[Crossref]

K. Vanheusden, W. L. Warren, C. H. Seager, D. R. Tallant, J. A. Voigt, and B. E. Gnade, “Mechanisms behind green photoluminescence in ZnO phosphor powders,” J. Appl. Phys. 79(10), 7983–7990 (1996).
[Crossref]

Guo, R.

R. Guo, J. Nishimura, M. Matsumoto, M. Higashihata, D. Nakamura, and T. Okada, “Electroluminescence from ZnO nanowire-based p-GaN/n-ZnO heterojunction light-emitting diodes,” Appl. Phys. B 94(1), 33–38 (2009).
[Crossref]

Ham, M. H.

M. C. Jeong, B. Y. Oh, M. H. Ham, and J. M. Myoung, “Electroluminescence from ZnO nanowires in n-ZnO film/ZnO nanowire array/p-GaN film heterojunction light-emitting diodes,” Appl. Phys. Lett. 88(20), 202105 (2006).
[Crossref]

Hersee, S. D.

A. A. Talin, F. Leonard, A. M. Katzenmeyer, B. S. Swartzentruber, S. T. Picraux, M. E. Toimil-Molares, J. G. Cederberg, X. Wang, S. D. Hersee, and A. Rishinaramangalum, “Transport characterization in nanowires using an electrical nanoprobe,” Semi. Sci. and Tech. 25(2), 024015 (2010).
[Crossref]

Higashihata, M.

R. Guo, J. Nishimura, M. Matsumoto, M. Higashihata, D. Nakamura, and T. Okada, “Electroluminescence from ZnO nanowire-based p-GaN/n-ZnO heterojunction light-emitting diodes,” Appl. Phys. B 94(1), 33–38 (2009).
[Crossref]

Hofmann, D. M.

A. Kronenberger, J. Benz, P. Klement, A. Polity, D. M. Hofmann, P. J. Klar, and B. K. Meyer, “Light emission from ZnO/GaN and ZnO1−xSx/GaN p-n junctions,” Semicond. Sci. Technol. (submitted to).

Horikoshi, Y.

T. Tatsumi, M. Fujita, N. Kawamoto, M. Sasajima, and Y. Horikoshi, “Intrinsic Defects in ZnO Films Grown by Molecular Beam Epitaxy,” Jpn. J. Appl. Phys. 43(5A), 2602–2606 (2004).
[Crossref]

Horng, R.-H.

Hu, J. W.

J. W. Hu and Y. Bando, “Growth and optical properties of single-crystal tubular ZnO whiskers,” Appl. Phys. Lett. 82(9), 1401–1403 (2003).
[Crossref]

J. W. Hu and Y. Bando, “Growth and optical properties of single-crystal tubular ZnO whiskers,” Appl. Phys. Lett. 82(9), 1401–1403 (2003).
[Crossref]

Hu, Y.

S. Xu, C. Xu, Y. Liu, Y. Hu, R. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
[Crossref] [PubMed]

Huang, C.-Y.

Jeong, M. C.

M. C. Jeong, B. Y. Oh, M. H. Ham, and J. M. Myoung, “Electroluminescence from ZnO nanowires in n-ZnO film/ZnO nanowire array/p-GaN film heterojunction light-emitting diodes,” Appl. Phys. Lett. 88(20), 202105 (2006).
[Crossref]

Jha, S.

S. Jha, J. C. Qian, O. Kutsay, J. Kovac, C. Y. Luan, J. A. Zapien, W. Zhang, S. T. Lee, and I. Bello, “Violet-blue LEDs based on p-GaN/n-ZnO nanorods and their stability,” Nanotechnology 22(24), 245202 (2011).
[Crossref] [PubMed]

Jia, Y.

B. Lin, Z. Fu, and Y. Jia, “Green luminescent center in undoped zinc oxide films deposited on silicon substrates,” Appl. Phys. Lett. 79(7), 943–945 (2001).
[Crossref]

Katzenmeyer, A. M.

A. A. Talin, F. Leonard, A. M. Katzenmeyer, B. S. Swartzentruber, S. T. Picraux, M. E. Toimil-Molares, J. G. Cederberg, X. Wang, S. D. Hersee, and A. Rishinaramangalum, “Transport characterization in nanowires using an electrical nanoprobe,” Semi. Sci. and Tech. 25(2), 024015 (2010).
[Crossref]

Kaufmann, M.

M. Kaufmann, M. Kunzer, M. Maier, H. Obloh, A. Ramakrishnan, B. Santic, and P. Schlotter, “Nature of the 2.8 eV photoluminescence band in Mg doped GaN”,” Appl. Phys. Lett. 72(11), 1326–1328 (1998).
[Crossref]

Kaufmann, U.

U. Kaufmann, M. Kunzer, H. Obloh, M. Maier, C. Manz, A. Ramakrishnan, and B. Santic, “Origin of defect-related photoluminescence bands in doped and nominally undoped GaN,” Phys. Rev. B 59(8), 5561–5567 (1999).
[Crossref]

Kawamoto, N.

T. Tatsumi, M. Fujita, N. Kawamoto, M. Sasajima, and Y. Horikoshi, “Intrinsic Defects in ZnO Films Grown by Molecular Beam Epitaxy,” Jpn. J. Appl. Phys. 43(5A), 2602–2606 (2004).
[Crossref]

Kim, H. J.

S. Xu, C. Xu, Y. Liu, Y. Hu, R. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
[Crossref] [PubMed]

Kim, W.

E. Lai, W. Kim, and P. Yang, “Vertical nanowire array-based light emitting diodes,” Nano Res. 1(2), 123–128 (2008).
[Crossref]

Klar, P. J.

A. Kronenberger, J. Benz, P. Klement, A. Polity, D. M. Hofmann, P. J. Klar, and B. K. Meyer, “Light emission from ZnO/GaN and ZnO1−xSx/GaN p-n junctions,” Semicond. Sci. Technol. (submitted to).

Klement, P.

A. Kronenberger, J. Benz, P. Klement, A. Polity, D. M. Hofmann, P. J. Klar, and B. K. Meyer, “Light emission from ZnO/GaN and ZnO1−xSx/GaN p-n junctions,” Semicond. Sci. Technol. (submitted to).

Kovac, J.

S. Jha, J. C. Qian, O. Kutsay, J. Kovac, C. Y. Luan, J. A. Zapien, W. Zhang, S. T. Lee, and I. Bello, “Violet-blue LEDs based on p-GaN/n-ZnO nanorods and their stability,” Nanotechnology 22(24), 245202 (2011).
[Crossref] [PubMed]

Kronenberger, A.

A. Kronenberger, J. Benz, P. Klement, A. Polity, D. M. Hofmann, P. J. Klar, and B. K. Meyer, “Light emission from ZnO/GaN and ZnO1−xSx/GaN p-n junctions,” Semicond. Sci. Technol. (submitted to).

Kunzer, M.

U. Kaufmann, M. Kunzer, H. Obloh, M. Maier, C. Manz, A. Ramakrishnan, and B. Santic, “Origin of defect-related photoluminescence bands in doped and nominally undoped GaN,” Phys. Rev. B 59(8), 5561–5567 (1999).
[Crossref]

M. Kaufmann, M. Kunzer, M. Maier, H. Obloh, A. Ramakrishnan, B. Santic, and P. Schlotter, “Nature of the 2.8 eV photoluminescence band in Mg doped GaN”,” Appl. Phys. Lett. 72(11), 1326–1328 (1998).
[Crossref]

Kutsay, O.

S. Jha, J. C. Qian, O. Kutsay, J. Kovac, C. Y. Luan, J. A. Zapien, W. Zhang, S. T. Lee, and I. Bello, “Violet-blue LEDs based on p-GaN/n-ZnO nanorods and their stability,” Nanotechnology 22(24), 245202 (2011).
[Crossref] [PubMed]

Lai, E.

E. Lai, W. Kim, and P. Yang, “Vertical nanowire array-based light emitting diodes,” Nano Res. 1(2), 123–128 (2008).
[Crossref]

Lee, S. T.

S. Jha, J. C. Qian, O. Kutsay, J. Kovac, C. Y. Luan, J. A. Zapien, W. Zhang, S. T. Lee, and I. Bello, “Violet-blue LEDs based on p-GaN/n-ZnO nanorods and their stability,” Nanotechnology 22(24), 245202 (2011).
[Crossref] [PubMed]

Leonard, F.

A. A. Talin, F. Leonard, A. M. Katzenmeyer, B. S. Swartzentruber, S. T. Picraux, M. E. Toimil-Molares, J. G. Cederberg, X. Wang, S. D. Hersee, and A. Rishinaramangalum, “Transport characterization in nanowires using an electrical nanoprobe,” Semi. Sci. and Tech. 25(2), 024015 (2010).
[Crossref]

Li, G.-W.

Q.-M. Fu, W. Cao, G.-W. Li, Z.-D. Lin, Z. Chen, C.-B. Xu, Y.-F. Tu, and Z.-B. Ma, “Blue/green electroluminescence from a ZnO nanorods/p-GaN heterojunction light emitting diode under different reverse bias,” Appl. Surf. Sci. 293, 225–228 (2014).
[Crossref]

Lin, B.

B. Lin, Z. Fu, and Y. Jia, “Green luminescent center in undoped zinc oxide films deposited on silicon substrates,” Appl. Phys. Lett. 79(7), 943–945 (2001).
[Crossref]

Lin, Z.-D.

Q.-M. Fu, W. Cao, G.-W. Li, Z.-D. Lin, Z. Chen, C.-B. Xu, Y.-F. Tu, and Z.-B. Ma, “Blue/green electroluminescence from a ZnO nanorods/p-GaN heterojunction light emitting diode under different reverse bias,” Appl. Surf. Sci. 293, 225–228 (2014).
[Crossref]

Liu, Y.

S. Xu, C. Xu, Y. Liu, Y. Hu, R. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
[Crossref] [PubMed]

Lochner, Z.

S. Xu, C. Xu, Y. Liu, Y. Hu, R. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
[Crossref] [PubMed]

Lu, M. Y.

X. M. Zhang, M. Y. Lu, Y. Zhang, L. J. Chen, and Z. L. Wang, “Fabrication of a high-brightness blue-light-emitting diode using a ZnO-nanowire array grown on p-GaN thin film,” Adv. Mater. 21(27), 2767–2770 (2009).
[Crossref]

Lu, Y.

J. Zhong, H. Chen, G. Saraf, Y. Lu, C. K. Choi, J. J. Song, D. M. Mackie, and H. Shen, “Integrated ZnO nanotips on GaN light emitting diodes for enhanced emission efficiency,” Appl. Phys. Lett. 90(20), 203515 (2007).
[Crossref]

Luan, C. Y.

S. Jha, J. C. Qian, O. Kutsay, J. Kovac, C. Y. Luan, J. A. Zapien, W. Zhang, S. T. Lee, and I. Bello, “Violet-blue LEDs based on p-GaN/n-ZnO nanorods and their stability,” Nanotechnology 22(24), 245202 (2011).
[Crossref] [PubMed]

Lupan, O.

O. Lupan, T. Pauporté, and B. Viana, “Low-voltage UV-electroluminescence from ZnO-nanowire Array/p-GaN light-emitting diodes,” Adv. Mater. 22(30), 3298–3302 (2010).
[Crossref] [PubMed]

Ma, Z.-B.

Q.-M. Fu, W. Cao, G.-W. Li, Z.-D. Lin, Z. Chen, C.-B. Xu, Y.-F. Tu, and Z.-B. Ma, “Blue/green electroluminescence from a ZnO nanorods/p-GaN heterojunction light emitting diode under different reverse bias,” Appl. Surf. Sci. 293, 225–228 (2014).
[Crossref]

Mackie, D. M.

J. Zhong, H. Chen, G. Saraf, Y. Lu, C. K. Choi, J. J. Song, D. M. Mackie, and H. Shen, “Integrated ZnO nanotips on GaN light emitting diodes for enhanced emission efficiency,” Appl. Phys. Lett. 90(20), 203515 (2007).
[Crossref]

Maier, M.

U. Kaufmann, M. Kunzer, H. Obloh, M. Maier, C. Manz, A. Ramakrishnan, and B. Santic, “Origin of defect-related photoluminescence bands in doped and nominally undoped GaN,” Phys. Rev. B 59(8), 5561–5567 (1999).
[Crossref]

M. Kaufmann, M. Kunzer, M. Maier, H. Obloh, A. Ramakrishnan, B. Santic, and P. Schlotter, “Nature of the 2.8 eV photoluminescence band in Mg doped GaN”,” Appl. Phys. Lett. 72(11), 1326–1328 (1998).
[Crossref]

Manz, C.

U. Kaufmann, M. Kunzer, H. Obloh, M. Maier, C. Manz, A. Ramakrishnan, and B. Santic, “Origin of defect-related photoluminescence bands in doped and nominally undoped GaN,” Phys. Rev. B 59(8), 5561–5567 (1999).
[Crossref]

Matsumoto, M.

R. Guo, J. Nishimura, M. Matsumoto, M. Higashihata, D. Nakamura, and T. Okada, “Electroluminescence from ZnO nanowire-based p-GaN/n-ZnO heterojunction light-emitting diodes,” Appl. Phys. B 94(1), 33–38 (2009).
[Crossref]

Meijerink, A.

A. van Dijken, E. A. Meulenkamp, D. Vanmaekelbergh, and A. Meijerink, “The luminescence of nanocrystalline ZnO particles: the mechanism of the ultraviolet and visible emission,” J. Lumin. 87–89, 454–456 (2000).
[Crossref]

Meulenkamp, E. A.

A. van Dijken, E. A. Meulenkamp, D. Vanmaekelbergh, and A. Meijerink, “The luminescence of nanocrystalline ZnO particles: the mechanism of the ultraviolet and visible emission,” J. Lumin. 87–89, 454–456 (2000).
[Crossref]

Meyer, B. K.

A. Kronenberger, J. Benz, P. Klement, A. Polity, D. M. Hofmann, P. J. Klar, and B. K. Meyer, “Light emission from ZnO/GaN and ZnO1−xSx/GaN p-n junctions,” Semicond. Sci. Technol. (submitted to).

Morante, J. R.

J. D. Prades, A. Cirera, J. R. Morante, and A. Cornet, “An insight into the visible luminescent properties of ZnO,” Thin Solid Films 515(24), 8670–8673 (2007).
[Crossref]

Müller, S.

M. A. Zimmler, J. M. Bao, F. Capasso, S. Müller, and C. Ronning, “Laser action in nanowires observation of the transition from amplified spontaneous emission to laser oscillation,” Appl. Phys. Lett. 93(5), 051101 (2008).
[Crossref]

Myoung, J. M.

M. C. Jeong, B. Y. Oh, M. H. Ham, and J. M. Myoung, “Electroluminescence from ZnO nanowires in n-ZnO film/ZnO nanowire array/p-GaN film heterojunction light-emitting diodes,” Appl. Phys. Lett. 88(20), 202105 (2006).
[Crossref]

Nakamura, A.

Nakamura, D.

R. Guo, J. Nishimura, M. Matsumoto, M. Higashihata, D. Nakamura, and T. Okada, “Electroluminescence from ZnO nanowire-based p-GaN/n-ZnO heterojunction light-emitting diodes,” Appl. Phys. B 94(1), 33–38 (2009).
[Crossref]

Nishimura, J.

R. Guo, J. Nishimura, M. Matsumoto, M. Higashihata, D. Nakamura, and T. Okada, “Electroluminescence from ZnO nanowire-based p-GaN/n-ZnO heterojunction light-emitting diodes,” Appl. Phys. B 94(1), 33–38 (2009).
[Crossref]

Obloh, H.

U. Kaufmann, M. Kunzer, H. Obloh, M. Maier, C. Manz, A. Ramakrishnan, and B. Santic, “Origin of defect-related photoluminescence bands in doped and nominally undoped GaN,” Phys. Rev. B 59(8), 5561–5567 (1999).
[Crossref]

M. Kaufmann, M. Kunzer, M. Maier, H. Obloh, A. Ramakrishnan, B. Santic, and P. Schlotter, “Nature of the 2.8 eV photoluminescence band in Mg doped GaN”,” Appl. Phys. Lett. 72(11), 1326–1328 (1998).
[Crossref]

Oh, B. Y.

M. C. Jeong, B. Y. Oh, M. H. Ham, and J. M. Myoung, “Electroluminescence from ZnO nanowires in n-ZnO film/ZnO nanowire array/p-GaN film heterojunction light-emitting diodes,” Appl. Phys. Lett. 88(20), 202105 (2006).
[Crossref]

Okada, T.

R. Guo, J. Nishimura, M. Matsumoto, M. Higashihata, D. Nakamura, and T. Okada, “Electroluminescence from ZnO nanowire-based p-GaN/n-ZnO heterojunction light-emitting diodes,” Appl. Phys. B 94(1), 33–38 (2009).
[Crossref]

Park, W. I.

W. I. Park and G. C. Yi, “Electroluminescence in n-ZnO nanorod arrays vertically grown on p-GaN,” Adv. Mater. 16(1), 87–90 (2004).
[Crossref]

Pauporté, T.

O. Lupan, T. Pauporté, and B. Viana, “Low-voltage UV-electroluminescence from ZnO-nanowire Array/p-GaN light-emitting diodes,” Adv. Mater. 22(30), 3298–3302 (2010).
[Crossref] [PubMed]

Picraux, S. T.

A. A. Talin, F. Leonard, A. M. Katzenmeyer, B. S. Swartzentruber, S. T. Picraux, M. E. Toimil-Molares, J. G. Cederberg, X. Wang, S. D. Hersee, and A. Rishinaramangalum, “Transport characterization in nanowires using an electrical nanoprobe,” Semi. Sci. and Tech. 25(2), 024015 (2010).
[Crossref]

Polity, A.

A. Kronenberger, J. Benz, P. Klement, A. Polity, D. M. Hofmann, P. J. Klar, and B. K. Meyer, “Light emission from ZnO/GaN and ZnO1−xSx/GaN p-n junctions,” Semicond. Sci. Technol. (submitted to).

Prades, J. D.

J. D. Prades, A. Cirera, J. R. Morante, and A. Cornet, “An insight into the visible luminescent properties of ZnO,” Thin Solid Films 515(24), 8670–8673 (2007).
[Crossref]

Qian, J. C.

S. Jha, J. C. Qian, O. Kutsay, J. Kovac, C. Y. Luan, J. A. Zapien, W. Zhang, S. T. Lee, and I. Bello, “Violet-blue LEDs based on p-GaN/n-ZnO nanorods and their stability,” Nanotechnology 22(24), 245202 (2011).
[Crossref] [PubMed]

Ramakrishnan, A.

U. Kaufmann, M. Kunzer, H. Obloh, M. Maier, C. Manz, A. Ramakrishnan, and B. Santic, “Origin of defect-related photoluminescence bands in doped and nominally undoped GaN,” Phys. Rev. B 59(8), 5561–5567 (1999).
[Crossref]

M. Kaufmann, M. Kunzer, M. Maier, H. Obloh, A. Ramakrishnan, B. Santic, and P. Schlotter, “Nature of the 2.8 eV photoluminescence band in Mg doped GaN”,” Appl. Phys. Lett. 72(11), 1326–1328 (1998).
[Crossref]

Rishinaramangalum, A.

A. A. Talin, F. Leonard, A. M. Katzenmeyer, B. S. Swartzentruber, S. T. Picraux, M. E. Toimil-Molares, J. G. Cederberg, X. Wang, S. D. Hersee, and A. Rishinaramangalum, “Transport characterization in nanowires using an electrical nanoprobe,” Semi. Sci. and Tech. 25(2), 024015 (2010).
[Crossref]

Ronning, C.

M. A. Zimmler, J. M. Bao, F. Capasso, S. Müller, and C. Ronning, “Laser action in nanowires observation of the transition from amplified spontaneous emission to laser oscillation,” Appl. Phys. Lett. 93(5), 051101 (2008).
[Crossref]

Ryou, J. H.

S. Xu, C. Xu, Y. Liu, Y. Hu, R. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
[Crossref] [PubMed]

Santic, B.

U. Kaufmann, M. Kunzer, H. Obloh, M. Maier, C. Manz, A. Ramakrishnan, and B. Santic, “Origin of defect-related photoluminescence bands in doped and nominally undoped GaN,” Phys. Rev. B 59(8), 5561–5567 (1999).
[Crossref]

M. Kaufmann, M. Kunzer, M. Maier, H. Obloh, A. Ramakrishnan, B. Santic, and P. Schlotter, “Nature of the 2.8 eV photoluminescence band in Mg doped GaN”,” Appl. Phys. Lett. 72(11), 1326–1328 (1998).
[Crossref]

Saraf, G.

J. Zhong, H. Chen, G. Saraf, Y. Lu, C. K. Choi, J. J. Song, D. M. Mackie, and H. Shen, “Integrated ZnO nanotips on GaN light emitting diodes for enhanced emission efficiency,” Appl. Phys. Lett. 90(20), 203515 (2007).
[Crossref]

Sasajima, M.

T. Tatsumi, M. Fujita, N. Kawamoto, M. Sasajima, and Y. Horikoshi, “Intrinsic Defects in ZnO Films Grown by Molecular Beam Epitaxy,” Jpn. J. Appl. Phys. 43(5A), 2602–2606 (2004).
[Crossref]

Sberveglieri, G.

C. Baratto, E. Comini, M. Ferroni, G. Faglia, and G. Sberveglieri, “Plasma-induced enhancement of UV photoluminescence in ZnO nanowires,” CrystEngComm 15(39), 7981 (2013).
[Crossref]

C. Soldano, E. Comini, C. Baratto, M. Ferroni, G. Faglia, and G. Sberveglieri, “Metal oxides mono-dimensional nanostructures for gas sensing and light Emission,” J. Am. Ceram. Soc. 95(3), 831–850 (2012).

A. Vomiero, I. Concina, E. Comini, C. Soldano, M. Ferroni, G. Faglia, and G. Sberveglieri, “One-dimensional nanostructured oxides for thermoelectric applications and excitonic solar cells,” Nano Energy 1(3), 372–390 (2012).
[Crossref]

E. Comini, C. Baratto, G. Faglia, M. Ferroni, and G. Sberveglieri, “Single crystal ZnO nanowires as optical and conductometric chemical sensor,” J. Phys. D 40(23), 7255–7259 (2007).
[Crossref]

Schlotter, P.

M. Kaufmann, M. Kunzer, M. Maier, H. Obloh, A. Ramakrishnan, B. Santic, and P. Schlotter, “Nature of the 2.8 eV photoluminescence band in Mg doped GaN”,” Appl. Phys. Lett. 72(11), 1326–1328 (1998).
[Crossref]

Seager, C. H.

K. Vanheusden, W. L. Warren, C. H. Seager, D. R. Tallant, J. A. Voigt, and B. E. Gnade, “Mechanisms behind green photoluminescence in ZnO phosphor powders,” J. Appl. Phys. 79(10), 7983–7990 (1996).
[Crossref]

K. Vanheusden, W. L. Warren, C. H. Seager, D. R. Tallant, J. A. Voigt, and B. E. Gnade, “Mechanisms behind green photoluminescence in ZnO phosphor powders,” J. Appl. Phys. 79(10), 7983–7990 (1996).
[Crossref]

Shen, H.

J. Zhong, H. Chen, G. Saraf, Y. Lu, C. K. Choi, J. J. Song, D. M. Mackie, and H. Shen, “Integrated ZnO nanotips on GaN light emitting diodes for enhanced emission efficiency,” Appl. Phys. Lett. 90(20), 203515 (2007).
[Crossref]

Shen, K.-C.

Soldano, C.

A. Vomiero, I. Concina, E. Comini, C. Soldano, M. Ferroni, G. Faglia, and G. Sberveglieri, “One-dimensional nanostructured oxides for thermoelectric applications and excitonic solar cells,” Nano Energy 1(3), 372–390 (2012).
[Crossref]

C. Soldano, E. Comini, C. Baratto, M. Ferroni, G. Faglia, and G. Sberveglieri, “Metal oxides mono-dimensional nanostructures for gas sensing and light Emission,” J. Am. Ceram. Soc. 95(3), 831–850 (2012).

Song, J. J.

J. Zhong, H. Chen, G. Saraf, Y. Lu, C. K. Choi, J. J. Song, D. M. Mackie, and H. Shen, “Integrated ZnO nanotips on GaN light emitting diodes for enhanced emission efficiency,” Appl. Phys. Lett. 90(20), 203515 (2007).
[Crossref]

Studenikin, S. A.

S. A. Studenikin and M. Cocivera, “Time-resolved luminescence and photoconductivity of polycrystalline ZnO films,” J. Appl. Phys. 91(8), 5060 (2002).
[Crossref]

Swartzentruber, B. S.

A. A. Talin, F. Leonard, A. M. Katzenmeyer, B. S. Swartzentruber, S. T. Picraux, M. E. Toimil-Molares, J. G. Cederberg, X. Wang, S. D. Hersee, and A. Rishinaramangalum, “Transport characterization in nanowires using an electrical nanoprobe,” Semi. Sci. and Tech. 25(2), 024015 (2010).
[Crossref]

Talin, A. A.

A. A. Talin, F. Leonard, A. M. Katzenmeyer, B. S. Swartzentruber, S. T. Picraux, M. E. Toimil-Molares, J. G. Cederberg, X. Wang, S. D. Hersee, and A. Rishinaramangalum, “Transport characterization in nanowires using an electrical nanoprobe,” Semi. Sci. and Tech. 25(2), 024015 (2010).
[Crossref]

Tallant, D. R.

K. Vanheusden, W. L. Warren, C. H. Seager, D. R. Tallant, J. A. Voigt, and B. E. Gnade, “Mechanisms behind green photoluminescence in ZnO phosphor powders,” J. Appl. Phys. 79(10), 7983–7990 (1996).
[Crossref]

K. Vanheusden, W. L. Warren, C. H. Seager, D. R. Tallant, J. A. Voigt, and B. E. Gnade, “Mechanisms behind green photoluminescence in ZnO phosphor powders,” J. Appl. Phys. 79(10), 7983–7990 (1996).
[Crossref]

Tatsumi, T.

T. Tatsumi, M. Fujita, N. Kawamoto, M. Sasajima, and Y. Horikoshi, “Intrinsic Defects in ZnO Films Grown by Molecular Beam Epitaxy,” Jpn. J. Appl. Phys. 43(5A), 2602–2606 (2004).
[Crossref]

Temmyo, J.

Toimil-Molares, M. E.

A. A. Talin, F. Leonard, A. M. Katzenmeyer, B. S. Swartzentruber, S. T. Picraux, M. E. Toimil-Molares, J. G. Cederberg, X. Wang, S. D. Hersee, and A. Rishinaramangalum, “Transport characterization in nanowires using an electrical nanoprobe,” Semi. Sci. and Tech. 25(2), 024015 (2010).
[Crossref]

Tu, Y.-F.

Q.-M. Fu, W. Cao, G.-W. Li, Z.-D. Lin, Z. Chen, C.-B. Xu, Y.-F. Tu, and Z.-B. Ma, “Blue/green electroluminescence from a ZnO nanorods/p-GaN heterojunction light emitting diode under different reverse bias,” Appl. Surf. Sci. 293, 225–228 (2014).
[Crossref]

van Dijken, A.

A. van Dijken, E. A. Meulenkamp, D. Vanmaekelbergh, and A. Meijerink, “The luminescence of nanocrystalline ZnO particles: the mechanism of the ultraviolet and visible emission,” J. Lumin. 87–89, 454–456 (2000).
[Crossref]

Vanheusden, K.

K. Vanheusden, W. L. Warren, C. H. Seager, D. R. Tallant, J. A. Voigt, and B. E. Gnade, “Mechanisms behind green photoluminescence in ZnO phosphor powders,” J. Appl. Phys. 79(10), 7983–7990 (1996).
[Crossref]

K. Vanheusden, W. L. Warren, C. H. Seager, D. R. Tallant, J. A. Voigt, and B. E. Gnade, “Mechanisms behind green photoluminescence in ZnO phosphor powders,” J. Appl. Phys. 79(10), 7983–7990 (1996).
[Crossref]

Vanmaekelbergh, D.

A. van Dijken, E. A. Meulenkamp, D. Vanmaekelbergh, and A. Meijerink, “The luminescence of nanocrystalline ZnO particles: the mechanism of the ultraviolet and visible emission,” J. Lumin. 87–89, 454–456 (2000).
[Crossref]

Viana, B.

O. Lupan, T. Pauporté, and B. Viana, “Low-voltage UV-electroluminescence from ZnO-nanowire Array/p-GaN light-emitting diodes,” Adv. Mater. 22(30), 3298–3302 (2010).
[Crossref] [PubMed]

Voigt, J. A.

K. Vanheusden, W. L. Warren, C. H. Seager, D. R. Tallant, J. A. Voigt, and B. E. Gnade, “Mechanisms behind green photoluminescence in ZnO phosphor powders,” J. Appl. Phys. 79(10), 7983–7990 (1996).
[Crossref]

K. Vanheusden, W. L. Warren, C. H. Seager, D. R. Tallant, J. A. Voigt, and B. E. Gnade, “Mechanisms behind green photoluminescence in ZnO phosphor powders,” J. Appl. Phys. 79(10), 7983–7990 (1996).
[Crossref]

Vomiero, A.

A. Vomiero, I. Concina, E. Comini, C. Soldano, M. Ferroni, G. Faglia, and G. Sberveglieri, “One-dimensional nanostructured oxides for thermoelectric applications and excitonic solar cells,” Nano Energy 1(3), 372–390 (2012).
[Crossref]

Wang, X.

A. A. Talin, F. Leonard, A. M. Katzenmeyer, B. S. Swartzentruber, S. T. Picraux, M. E. Toimil-Molares, J. G. Cederberg, X. Wang, S. D. Hersee, and A. Rishinaramangalum, “Transport characterization in nanowires using an electrical nanoprobe,” Semi. Sci. and Tech. 25(2), 024015 (2010).
[Crossref]

Wang, Z. L.

S. Xu, C. Xu, Y. Liu, Y. Hu, R. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
[Crossref] [PubMed]

X. M. Zhang, M. Y. Lu, Y. Zhang, L. J. Chen, and Z. L. Wang, “Fabrication of a high-brightness blue-light-emitting diode using a ZnO-nanowire array grown on p-GaN thin film,” Adv. Mater. 21(27), 2767–2770 (2009).
[Crossref]

Warren, W. L.

K. Vanheusden, W. L. Warren, C. H. Seager, D. R. Tallant, J. A. Voigt, and B. E. Gnade, “Mechanisms behind green photoluminescence in ZnO phosphor powders,” J. Appl. Phys. 79(10), 7983–7990 (1996).
[Crossref]

K. Vanheusden, W. L. Warren, C. H. Seager, D. R. Tallant, J. A. Voigt, and B. E. Gnade, “Mechanisms behind green photoluminescence in ZnO phosphor powders,” J. Appl. Phys. 79(10), 7983–7990 (1996).
[Crossref]

Wuu, D.-S.

Xu, C.

S. Xu, C. Xu, Y. Liu, Y. Hu, R. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
[Crossref] [PubMed]

Xu, C.-B.

Q.-M. Fu, W. Cao, G.-W. Li, Z.-D. Lin, Z. Chen, C.-B. Xu, Y.-F. Tu, and Z.-B. Ma, “Blue/green electroluminescence from a ZnO nanorods/p-GaN heterojunction light emitting diode under different reverse bias,” Appl. Surf. Sci. 293, 225–228 (2014).
[Crossref]

Xu, S.

S. Xu, C. Xu, Y. Liu, Y. Hu, R. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
[Crossref] [PubMed]

Yang, P.

E. Lai, W. Kim, and P. Yang, “Vertical nanowire array-based light emitting diodes,” Nano Res. 1(2), 123–128 (2008).
[Crossref]

Yang, Q.

S. Xu, C. Xu, Y. Liu, Y. Hu, R. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
[Crossref] [PubMed]

Yang, R.

S. Xu, C. Xu, Y. Liu, Y. Hu, R. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
[Crossref] [PubMed]

Yi, G. C.

W. I. Park and G. C. Yi, “Electroluminescence in n-ZnO nanorod arrays vertically grown on p-GaN,” Adv. Mater. 16(1), 87–90 (2004).
[Crossref]

Yin, C.-Y.

Zang, Z.

Zapien, J. A.

S. Jha, J. C. Qian, O. Kutsay, J. Kovac, C. Y. Luan, J. A. Zapien, W. Zhang, S. T. Lee, and I. Bello, “Violet-blue LEDs based on p-GaN/n-ZnO nanorods and their stability,” Nanotechnology 22(24), 245202 (2011).
[Crossref] [PubMed]

Zhang, W.

S. Jha, J. C. Qian, O. Kutsay, J. Kovac, C. Y. Luan, J. A. Zapien, W. Zhang, S. T. Lee, and I. Bello, “Violet-blue LEDs based on p-GaN/n-ZnO nanorods and their stability,” Nanotechnology 22(24), 245202 (2011).
[Crossref] [PubMed]

Zhang, X. M.

X. M. Zhang, M. Y. Lu, Y. Zhang, L. J. Chen, and Z. L. Wang, “Fabrication of a high-brightness blue-light-emitting diode using a ZnO-nanowire array grown on p-GaN thin film,” Adv. Mater. 21(27), 2767–2770 (2009).
[Crossref]

Zhang, Y.

X. M. Zhang, M. Y. Lu, Y. Zhang, L. J. Chen, and Z. L. Wang, “Fabrication of a high-brightness blue-light-emitting diode using a ZnO-nanowire array grown on p-GaN thin film,” Adv. Mater. 21(27), 2767–2770 (2009).
[Crossref]

Zhong, J.

J. Zhong, H. Chen, G. Saraf, Y. Lu, C. K. Choi, J. J. Song, D. M. Mackie, and H. Shen, “Integrated ZnO nanotips on GaN light emitting diodes for enhanced emission efficiency,” Appl. Phys. Lett. 90(20), 203515 (2007).
[Crossref]

Zimmler, M. A.

M. A. Zimmler, J. M. Bao, F. Capasso, S. Müller, and C. Ronning, “Laser action in nanowires observation of the transition from amplified spontaneous emission to laser oscillation,” Appl. Phys. Lett. 93(5), 051101 (2008).
[Crossref]

Adv. Mater. (4)

W. I. Park and G. C. Yi, “Electroluminescence in n-ZnO nanorod arrays vertically grown on p-GaN,” Adv. Mater. 16(1), 87–90 (2004).
[Crossref]

S. Xu, C. Xu, Y. Liu, Y. Hu, R. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
[Crossref] [PubMed]

X. M. Zhang, M. Y. Lu, Y. Zhang, L. J. Chen, and Z. L. Wang, “Fabrication of a high-brightness blue-light-emitting diode using a ZnO-nanowire array grown on p-GaN thin film,” Adv. Mater. 21(27), 2767–2770 (2009).
[Crossref]

O. Lupan, T. Pauporté, and B. Viana, “Low-voltage UV-electroluminescence from ZnO-nanowire Array/p-GaN light-emitting diodes,” Adv. Mater. 22(30), 3298–3302 (2010).
[Crossref] [PubMed]

Appl. Phys. B (1)

R. Guo, J. Nishimura, M. Matsumoto, M. Higashihata, D. Nakamura, and T. Okada, “Electroluminescence from ZnO nanowire-based p-GaN/n-ZnO heterojunction light-emitting diodes,” Appl. Phys. B 94(1), 33–38 (2009).
[Crossref]

Appl. Phys. Lett. (7)

M. C. Jeong, B. Y. Oh, M. H. Ham, and J. M. Myoung, “Electroluminescence from ZnO nanowires in n-ZnO film/ZnO nanowire array/p-GaN film heterojunction light-emitting diodes,” Appl. Phys. Lett. 88(20), 202105 (2006).
[Crossref]

M. A. Zimmler, J. M. Bao, F. Capasso, S. Müller, and C. Ronning, “Laser action in nanowires observation of the transition from amplified spontaneous emission to laser oscillation,” Appl. Phys. Lett. 93(5), 051101 (2008).
[Crossref]

J. Zhong, H. Chen, G. Saraf, Y. Lu, C. K. Choi, J. J. Song, D. M. Mackie, and H. Shen, “Integrated ZnO nanotips on GaN light emitting diodes for enhanced emission efficiency,” Appl. Phys. Lett. 90(20), 203515 (2007).
[Crossref]

J. W. Hu and Y. Bando, “Growth and optical properties of single-crystal tubular ZnO whiskers,” Appl. Phys. Lett. 82(9), 1401–1403 (2003).
[Crossref]

M. Kaufmann, M. Kunzer, M. Maier, H. Obloh, A. Ramakrishnan, B. Santic, and P. Schlotter, “Nature of the 2.8 eV photoluminescence band in Mg doped GaN”,” Appl. Phys. Lett. 72(11), 1326–1328 (1998).
[Crossref]

J. W. Hu and Y. Bando, “Growth and optical properties of single-crystal tubular ZnO whiskers,” Appl. Phys. Lett. 82(9), 1401–1403 (2003).
[Crossref]

B. Lin, Z. Fu, and Y. Jia, “Green luminescent center in undoped zinc oxide films deposited on silicon substrates,” Appl. Phys. Lett. 79(7), 943–945 (2001).
[Crossref]

Appl. Surf. Sci. (1)

Q.-M. Fu, W. Cao, G.-W. Li, Z.-D. Lin, Z. Chen, C.-B. Xu, Y.-F. Tu, and Z.-B. Ma, “Blue/green electroluminescence from a ZnO nanorods/p-GaN heterojunction light emitting diode under different reverse bias,” Appl. Surf. Sci. 293, 225–228 (2014).
[Crossref]

CrystEngComm (1)

C. Baratto, E. Comini, M. Ferroni, G. Faglia, and G. Sberveglieri, “Plasma-induced enhancement of UV photoluminescence in ZnO nanowires,” CrystEngComm 15(39), 7981 (2013).
[Crossref]

J. Am. Ceram. Soc. (1)

C. Soldano, E. Comini, C. Baratto, M. Ferroni, G. Faglia, and G. Sberveglieri, “Metal oxides mono-dimensional nanostructures for gas sensing and light Emission,” J. Am. Ceram. Soc. 95(3), 831–850 (2012).

J. Appl. Phys. (3)

S. A. Studenikin and M. Cocivera, “Time-resolved luminescence and photoconductivity of polycrystalline ZnO films,” J. Appl. Phys. 91(8), 5060 (2002).
[Crossref]

K. Vanheusden, W. L. Warren, C. H. Seager, D. R. Tallant, J. A. Voigt, and B. E. Gnade, “Mechanisms behind green photoluminescence in ZnO phosphor powders,” J. Appl. Phys. 79(10), 7983–7990 (1996).
[Crossref]

K. Vanheusden, W. L. Warren, C. H. Seager, D. R. Tallant, J. A. Voigt, and B. E. Gnade, “Mechanisms behind green photoluminescence in ZnO phosphor powders,” J. Appl. Phys. 79(10), 7983–7990 (1996).
[Crossref]

J. Lumin. (1)

A. van Dijken, E. A. Meulenkamp, D. Vanmaekelbergh, and A. Meijerink, “The luminescence of nanocrystalline ZnO particles: the mechanism of the ultraviolet and visible emission,” J. Lumin. 87–89, 454–456 (2000).
[Crossref]

J. Phys. D (1)

E. Comini, C. Baratto, G. Faglia, M. Ferroni, and G. Sberveglieri, “Single crystal ZnO nanowires as optical and conductometric chemical sensor,” J. Phys. D 40(23), 7255–7259 (2007).
[Crossref]

Jpn. J. Appl. Phys. (1)

T. Tatsumi, M. Fujita, N. Kawamoto, M. Sasajima, and Y. Horikoshi, “Intrinsic Defects in ZnO Films Grown by Molecular Beam Epitaxy,” Jpn. J. Appl. Phys. 43(5A), 2602–2606 (2004).
[Crossref]

Nano Energy (1)

A. Vomiero, I. Concina, E. Comini, C. Soldano, M. Ferroni, G. Faglia, and G. Sberveglieri, “One-dimensional nanostructured oxides for thermoelectric applications and excitonic solar cells,” Nano Energy 1(3), 372–390 (2012).
[Crossref]

Nano Res. (1)

E. Lai, W. Kim, and P. Yang, “Vertical nanowire array-based light emitting diodes,” Nano Res. 1(2), 123–128 (2008).
[Crossref]

Nanotechnology (1)

S. Jha, J. C. Qian, O. Kutsay, J. Kovac, C. Y. Luan, J. A. Zapien, W. Zhang, S. T. Lee, and I. Bello, “Violet-blue LEDs based on p-GaN/n-ZnO nanorods and their stability,” Nanotechnology 22(24), 245202 (2011).
[Crossref] [PubMed]

Opt. Express (2)

Phys. Rev. B (1)

U. Kaufmann, M. Kunzer, H. Obloh, M. Maier, C. Manz, A. Ramakrishnan, and B. Santic, “Origin of defect-related photoluminescence bands in doped and nominally undoped GaN,” Phys. Rev. B 59(8), 5561–5567 (1999).
[Crossref]

Semi. Sci. and Tech. (1)

A. A. Talin, F. Leonard, A. M. Katzenmeyer, B. S. Swartzentruber, S. T. Picraux, M. E. Toimil-Molares, J. G. Cederberg, X. Wang, S. D. Hersee, and A. Rishinaramangalum, “Transport characterization in nanowires using an electrical nanoprobe,” Semi. Sci. and Tech. 25(2), 024015 (2010).
[Crossref]

Thin Solid Films (1)

J. D. Prades, A. Cirera, J. R. Morante, and A. Cornet, “An insight into the visible luminescent properties of ZnO,” Thin Solid Films 515(24), 8670–8673 (2007).
[Crossref]

Other (2)

A. Kronenberger, J. Benz, P. Klement, A. Polity, D. M. Hofmann, P. J. Klar, and B. K. Meyer, “Light emission from ZnO/GaN and ZnO1−xSx/GaN p-n junctions,” Semicond. Sci. Technol. (submitted to).

Unpublished results.

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Figures (2)

Fig. 1
Fig. 1 (a) Scheme of ZnO nanowires/GaN device. (b) SEM images acquired at 50KX of nanowires as grown; (c) SEM images acquired at 50KX of nanowires partially covered with PMMA insulating layer after the plasma etching steps used to expose the tip of nanowires. The darker area are the ones covered by PMMA, while the end of the nanowires protrudes from the insulating layer, ready for contact deposition.
Fig. 2
Fig. 2 (a) I-V curve between p-GaN and n-ZnO NWs. Inset: black curve: Au contacts on p-GaN-p-GaN (p-p junction); Blue curve: Au contacts on n-ZnO NWs-n-ZnO NWs (n-n junction); (b) EL spectra of ZnO nanowires-GaN heterojunction acquired at different bias voltage in reverse bias configuration; (c) Fit with Gaussian peaks of the EL data at 10V. (d) Band diagram of ZnO NWS/GaN heterojunction at zero bias (e) CIE chromaticity coordinates of the light emission from the LED operated at various reverse bias voltages (8 V, 10 V, 12 V, and 14 V). The inset shows the image of the device at 12V. The light is emitted from the region around the contact on ZnO NWs. (f) PL spectra at RT taken with 50X LWD objective of heterojunction device in the region near of n-GaN (black line), p-GaN (red line) and ZnO nanowires (green line). Every spectrum was normalized to unit value at its maximum.

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