Abstract

We report a broadband tunable external-cavity laser based on InAs/InP quantum dots (QDs) grown by metal-organic vapor phase epitaxy. It is found that high AsH3 flow during the interruption after QD deposition greatly promotes QD ripening, which improves the optical gain of QD active medium in lower energy states. Combined with anti-reflection/high-reflection facet coatings, a broadly tunable InAs/InP QD external-cavity laser was realized with a tuning range of 140.4 nm across wavelengths from 1436.6 nm to 1577 nm at a maximum output power of 6 mW.

© 2015 Optical Society of America

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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
  23. A. E. Zhukov, A. R. Kovsh, N. A. Maleev, S. S. Mikhrin, V. M. Ustinov, A. F. Tsatsul’nikov, M. V. Maximov, B. V. Volovik, D. A. Bedarev, Y. M. Shernyakov, P. S. Kop’ev, Z. I. Alferov, N. N. Ledentsov, and D. Bimberg, “Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates,” Appl. Phys. Lett. 75(13), 1926–1928 (1999).
    [Crossref]
  24. J. L. Xiao, Y. Z. Huang, Y. Du, H. Zhao, H. Q. Ni, and Z. C. Niu, “Gain measurement and anomalous decrease of peak gain at long wavelength for InAs/GaAs quantum-dot lasers,” Chin. Phys. Lett. 24(10), 2984–2986 (2007).
    [Crossref]

2015 (1)

2014 (1)

2013 (1)

S. Luo, H.-M. Ji, X.-G. Yang, and T. Yang, “Impact of double-cap procedure on the characteristics of InAs/InGaAsP/InP quantum dots grown by metal-organic chemical vapor deposition,” J. Cryst. Growth 375, 100–103 (2013).
[Crossref]

2011 (1)

P. Chen, Q. Gong, C. Cao, S. Li, Y. Wang, Q. Liu, L. Yue, Y. Zhang, S. Feng, C. Ma, and H. L. Wang, “High performance external cavity InAs/InP quantum dot lasers,” Appl. Phys. Lett. 98(12), 121102 (2011).
[Crossref]

2007 (3)

C. K. Chia, S. J. Chua, J. R. Dong, and S. L. Teo, “Ultrawide band quantum dot light emitting device by postfabrication laser annealing,” Appl. Phys. Lett. 90(6), 061101 (2007).
[Crossref]

J. L. Xiao, Y. Z. Huang, Y. Du, H. Zhao, H. Q. Ni, and Z. C. Niu, “Gain measurement and anomalous decrease of peak gain at long wavelength for InAs/GaAs quantum-dot lasers,” Chin. Phys. Lett. 24(10), 2984–2986 (2007).
[Crossref]

H. S. Djie, B. S. Ooi, X. M. Fang, Y. Wu, J. M. Fastenau, W. K. Liu, and M. Hopkinson, “Room-temperature broadband emission of an InGaAs/GaAs quantum dots laser,” Opt. Lett. 32(1), 44–46 (2007).
[Crossref] [PubMed]

2006 (2)

K. Sears, H. H. Tan, J. Wong-Leung, and C. Jagadish, “The role of arsine in the self-assembled growth of InAs/GaAs quantum dots by metal organic chemical vapor deposition,” J. Appl. Phys. 99(4), 044908 (2006).
[Crossref]

G. Ortner, C. N. Allen, C. Dion, P. Barrios, D. Poitras, D. Dalacu, G. Pakulski, J. Lapointe, P. J. Poole, W. Render, and S. Raymond, “External cavity InAs/InP quantum dot laser with a tuning range of 166 nm,” Appl. Phys. Lett. 88(12), 121119 (2006).
[Crossref]

2005 (3)

2004 (1)

K. Pötschke, L. Muller-Kirsch, R. Heitz, R. L. Sellin, U. W. Pohl, D. Bimberg, N. Zakharov, and P. Werner, “Ripening of self-organized InAs quantum dots,” Physica E (Amsterdam) 21(2-4), 606–610 (2004).
[Crossref]

2001 (2)

W. G. Jeong, P. D. Dapkus, U. H. Lee, J. S. Yim, D. Lee, and B. T. Lee, “Epitaxial growth and optical characterization of InAs/InGaAsP/InP self-assembled quantum dots,” Appl. Phys. Lett. 78(9), 1171–1173 (2001).
[Crossref]

S. C. Woodworth, D. T. Cassidy, and M. J. Hamp, “Sensitive absorption spectroscopy by use of an asymmetric multiple-quantum-well diode laser in an external cavity,” Appl. Opt. 40(36), 6719–6724 (2001).
[Crossref] [PubMed]

2000 (3)

M. Grundmann, “Feasibility of 5 Gbit/s wavelength division multiplexing using quantum dot lasers,” Appl. Phys. Lett. 77(26), 4265–4267 (2000).
[Crossref]

H. Li, G. Liu, P. Varangis, T. Newell, A. Stintz, B. Fuchs, K. Malloy, and L. Lester, “150-nm tuning range in a grating-coupled external cavity quantum-dot laser,” IEEE Photonics Technol. Lett. 12(7), 759–761 (2000).
[Crossref]

P. M. Varangis, H. Li, G. T. Liu, T. C. Newell, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, “Low-threshold quantum dot lasers with 201 nm tuning range,” Electron. Lett. 36(18), 1544–1545 (2000).
[Crossref]

1999 (3)

S. Yoon, Y. Moon, T.-W. Lee, E. Yoon, and Y. D. Kim, “Effects of As/P exchange reaction on the formation of InAs/InP quantum dots,” Appl. Phys. Lett. 74(14), 2029–2031 (1999).
[Crossref]

L. F. Lester, A. Stintz, H. Li, T. C. Newell, E. A. Pease, B. A. Fuchs, and K. J. Malloy, “Optical characteristics of 1.24-mu m InAs quantum-dot laser diodes,” IEEE Photonics Technol. Lett. 11(8), 931–933 (1999).
[Crossref]

A. E. Zhukov, A. R. Kovsh, N. A. Maleev, S. S. Mikhrin, V. M. Ustinov, A. F. Tsatsul’nikov, M. V. Maximov, B. V. Volovik, D. A. Bedarev, Y. M. Shernyakov, P. S. Kop’ev, Z. I. Alferov, N. N. Ledentsov, and D. Bimberg, “Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates,” Appl. Phys. Lett. 75(13), 1926–1928 (1999).
[Crossref]

1998 (1)

G. P. Barwood, P. Gill, and W. R. C. Rowley, “High-accuracy length metrology using multiple-stage swept-frequency interferometry with laser diodes,” Meas. Sci. Technol. 9(7), 1036–1041 (1998).
[Crossref]

1995 (1)

L. Ricci, M. Weidemuller, T. Esslinger, A. Hemmerich, C. Zimmermann, V. Vuletic, W. Konig, and T. W. Hansch, “A compact grating-stabilized diode-laser system for atomic physics,” Opt. Commun. 117(5-6), 541–549 (1995).
[Crossref]

1990 (1)

H. Tabuchi and H. Ishikawa, “External grating tunable MQW laser with wide tuning range of 240 nm,” Electron. Lett. 26(11), 742–743 (1990).
[Crossref]

Alferov, Z. I.

A. E. Zhukov, A. R. Kovsh, N. A. Maleev, S. S. Mikhrin, V. M. Ustinov, A. F. Tsatsul’nikov, M. V. Maximov, B. V. Volovik, D. A. Bedarev, Y. M. Shernyakov, P. S. Kop’ev, Z. I. Alferov, N. N. Ledentsov, and D. Bimberg, “Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates,” Appl. Phys. Lett. 75(13), 1926–1928 (1999).
[Crossref]

Allen, C. N.

G. Ortner, C. N. Allen, C. Dion, P. Barrios, D. Poitras, D. Dalacu, G. Pakulski, J. Lapointe, P. J. Poole, W. Render, and S. Raymond, “External cavity InAs/InP quantum dot laser with a tuning range of 166 nm,” Appl. Phys. Lett. 88(12), 121119 (2006).
[Crossref]

Arnold, M. A.

Barrios, P.

G. Ortner, C. N. Allen, C. Dion, P. Barrios, D. Poitras, D. Dalacu, G. Pakulski, J. Lapointe, P. J. Poole, W. Render, and S. Raymond, “External cavity InAs/InP quantum dot laser with a tuning range of 166 nm,” Appl. Phys. Lett. 88(12), 121119 (2006).
[Crossref]

Barwood, G. P.

G. P. Barwood, P. Gill, and W. R. C. Rowley, “High-accuracy length metrology using multiple-stage swept-frequency interferometry with laser diodes,” Meas. Sci. Technol. 9(7), 1036–1041 (1998).
[Crossref]

Bedarev, D. A.

A. E. Zhukov, A. R. Kovsh, N. A. Maleev, S. S. Mikhrin, V. M. Ustinov, A. F. Tsatsul’nikov, M. V. Maximov, B. V. Volovik, D. A. Bedarev, Y. M. Shernyakov, P. S. Kop’ev, Z. I. Alferov, N. N. Ledentsov, and D. Bimberg, “Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates,” Appl. Phys. Lett. 75(13), 1926–1928 (1999).
[Crossref]

Bimberg, D.

K. Pötschke, L. Muller-Kirsch, R. Heitz, R. L. Sellin, U. W. Pohl, D. Bimberg, N. Zakharov, and P. Werner, “Ripening of self-organized InAs quantum dots,” Physica E (Amsterdam) 21(2-4), 606–610 (2004).
[Crossref]

A. E. Zhukov, A. R. Kovsh, N. A. Maleev, S. S. Mikhrin, V. M. Ustinov, A. F. Tsatsul’nikov, M. V. Maximov, B. V. Volovik, D. A. Bedarev, Y. M. Shernyakov, P. S. Kop’ev, Z. I. Alferov, N. N. Ledentsov, and D. Bimberg, “Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates,” Appl. Phys. Lett. 75(13), 1926–1928 (1999).
[Crossref]

Burrows, J. P.

Cao, C.

P. Chen, Q. Gong, C. Cao, S. Li, Y. Wang, Q. Liu, L. Yue, Y. Zhang, S. Feng, C. Ma, and H. L. Wang, “High performance external cavity InAs/InP quantum dot lasers,” Appl. Phys. Lett. 98(12), 121102 (2011).
[Crossref]

Cassidy, D. T.

Cataluna, M. A.

Chen, P.

P. Chen, Q. Gong, C. Cao, S. Li, Y. Wang, Q. Liu, L. Yue, Y. Zhang, S. Feng, C. Ma, and H. L. Wang, “High performance external cavity InAs/InP quantum dot lasers,” Appl. Phys. Lett. 98(12), 121102 (2011).
[Crossref]

Chia, C. K.

C. K. Chia, S. J. Chua, J. R. Dong, and S. L. Teo, “Ultrawide band quantum dot light emitting device by postfabrication laser annealing,” Appl. Phys. Lett. 90(6), 061101 (2007).
[Crossref]

Chua, S. J.

C. K. Chia, S. J. Chua, J. R. Dong, and S. L. Teo, “Ultrawide band quantum dot light emitting device by postfabrication laser annealing,” Appl. Phys. Lett. 90(6), 061101 (2007).
[Crossref]

Dalacu, D.

G. Ortner, C. N. Allen, C. Dion, P. Barrios, D. Poitras, D. Dalacu, G. Pakulski, J. Lapointe, P. J. Poole, W. Render, and S. Raymond, “External cavity InAs/InP quantum dot laser with a tuning range of 166 nm,” Appl. Phys. Lett. 88(12), 121119 (2006).
[Crossref]

Dapkus, P. D.

H. D. Kim, W. G. Jeong, J. H. Lee, J. S. Yim, D. Lee, R. Stevenson, P. D. Dapkus, J. W. Jang, and S. H. Pyun, “Continuous-wave operation of 1.5 μm InGaAs/InGaAsP/InP quantum dot lasers at room temperature,” Appl. Phys. Lett. 87(8), 083110 (2005).
[Crossref]

W. G. Jeong, P. D. Dapkus, U. H. Lee, J. S. Yim, D. Lee, and B. T. Lee, “Epitaxial growth and optical characterization of InAs/InGaAsP/InP self-assembled quantum dots,” Appl. Phys. Lett. 78(9), 1171–1173 (2001).
[Crossref]

Dion, C.

G. Ortner, C. N. Allen, C. Dion, P. Barrios, D. Poitras, D. Dalacu, G. Pakulski, J. Lapointe, P. J. Poole, W. Render, and S. Raymond, “External cavity InAs/InP quantum dot laser with a tuning range of 166 nm,” Appl. Phys. Lett. 88(12), 121119 (2006).
[Crossref]

Djie, H. S.

Dong, J. R.

C. K. Chia, S. J. Chua, J. R. Dong, and S. L. Teo, “Ultrawide band quantum dot light emitting device by postfabrication laser annealing,” Appl. Phys. Lett. 90(6), 061101 (2007).
[Crossref]

Du, Y.

J. L. Xiao, Y. Z. Huang, Y. Du, H. Zhao, H. Q. Ni, and Z. C. Niu, “Gain measurement and anomalous decrease of peak gain at long wavelength for InAs/GaAs quantum-dot lasers,” Chin. Phys. Lett. 24(10), 2984–2986 (2007).
[Crossref]

Ebert, V.

Esslinger, T.

L. Ricci, M. Weidemuller, T. Esslinger, A. Hemmerich, C. Zimmermann, V. Vuletic, W. Konig, and T. W. Hansch, “A compact grating-stabilized diode-laser system for atomic physics,” Opt. Commun. 117(5-6), 541–549 (1995).
[Crossref]

Fang, X. M.

Fastenau, J. M.

Feng, S.

P. Chen, Q. Gong, C. Cao, S. Li, Y. Wang, Q. Liu, L. Yue, Y. Zhang, S. Feng, C. Ma, and H. L. Wang, “High performance external cavity InAs/InP quantum dot lasers,” Appl. Phys. Lett. 98(12), 121102 (2011).
[Crossref]

Fernholz, T.

Fuchs, B.

P. M. Varangis, H. Li, G. T. Liu, T. C. Newell, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, “Low-threshold quantum dot lasers with 201 nm tuning range,” Electron. Lett. 36(18), 1544–1545 (2000).
[Crossref]

H. Li, G. Liu, P. Varangis, T. Newell, A. Stintz, B. Fuchs, K. Malloy, and L. Lester, “150-nm tuning range in a grating-coupled external cavity quantum-dot laser,” IEEE Photonics Technol. Lett. 12(7), 759–761 (2000).
[Crossref]

Fuchs, B. A.

L. F. Lester, A. Stintz, H. Li, T. C. Newell, E. A. Pease, B. A. Fuchs, and K. J. Malloy, “Optical characteristics of 1.24-mu m InAs quantum-dot laser diodes,” IEEE Photonics Technol. Lett. 11(8), 931–933 (1999).
[Crossref]

Gao, F.

Giesemann, C.

Gill, P.

G. P. Barwood, P. Gill, and W. R. C. Rowley, “High-accuracy length metrology using multiple-stage swept-frequency interferometry with laser diodes,” Meas. Sci. Technol. 9(7), 1036–1041 (1998).
[Crossref]

Gong, Q.

P. Chen, Q. Gong, C. Cao, S. Li, Y. Wang, Q. Liu, L. Yue, Y. Zhang, S. Feng, C. Ma, and H. L. Wang, “High performance external cavity InAs/InP quantum dot lasers,” Appl. Phys. Lett. 98(12), 121102 (2011).
[Crossref]

Grundmann, M.

M. Grundmann, “Feasibility of 5 Gbit/s wavelength division multiplexing using quantum dot lasers,” Appl. Phys. Lett. 77(26), 4265–4267 (2000).
[Crossref]

Gurlit, W.

Haggett, S.

Hamp, M. J.

Hansch, T. W.

L. Ricci, M. Weidemuller, T. Esslinger, A. Hemmerich, C. Zimmermann, V. Vuletic, W. Konig, and T. W. Hansch, “A compact grating-stabilized diode-laser system for atomic physics,” Opt. Commun. 117(5-6), 541–549 (1995).
[Crossref]

Heitz, R.

K. Pötschke, L. Muller-Kirsch, R. Heitz, R. L. Sellin, U. W. Pohl, D. Bimberg, N. Zakharov, and P. Werner, “Ripening of self-organized InAs quantum dots,” Physica E (Amsterdam) 21(2-4), 606–610 (2004).
[Crossref]

Hemmerich, A.

L. Ricci, M. Weidemuller, T. Esslinger, A. Hemmerich, C. Zimmermann, V. Vuletic, W. Konig, and T. W. Hansch, “A compact grating-stabilized diode-laser system for atomic physics,” Opt. Commun. 117(5-6), 541–549 (1995).
[Crossref]

Hopkinson, M.

Huang, Y. Z.

J. L. Xiao, Y. Z. Huang, Y. Du, H. Zhao, H. Q. Ni, and Z. C. Niu, “Gain measurement and anomalous decrease of peak gain at long wavelength for InAs/GaAs quantum-dot lasers,” Chin. Phys. Lett. 24(10), 2984–2986 (2007).
[Crossref]

Ishikawa, H.

H. Tabuchi and H. Ishikawa, “External grating tunable MQW laser with wide tuning range of 240 nm,” Electron. Lett. 26(11), 742–743 (1990).
[Crossref]

Jagadish, C.

K. Sears, H. H. Tan, J. Wong-Leung, and C. Jagadish, “The role of arsine in the self-assembled growth of InAs/GaAs quantum dots by metal organic chemical vapor deposition,” J. Appl. Phys. 99(4), 044908 (2006).
[Crossref]

Jang, J. W.

H. D. Kim, W. G. Jeong, J. H. Lee, J. S. Yim, D. Lee, R. Stevenson, P. D. Dapkus, J. W. Jang, and S. H. Pyun, “Continuous-wave operation of 1.5 μm InGaAs/InGaAsP/InP quantum dot lasers at room temperature,” Appl. Phys. Lett. 87(8), 083110 (2005).
[Crossref]

Jeong, W. G.

H. D. Kim, W. G. Jeong, J. H. Lee, J. S. Yim, D. Lee, R. Stevenson, P. D. Dapkus, J. W. Jang, and S. H. Pyun, “Continuous-wave operation of 1.5 μm InGaAs/InGaAsP/InP quantum dot lasers at room temperature,” Appl. Phys. Lett. 87(8), 083110 (2005).
[Crossref]

W. G. Jeong, P. D. Dapkus, U. H. Lee, J. S. Yim, D. Lee, and B. T. Lee, “Epitaxial growth and optical characterization of InAs/InGaAsP/InP self-assembled quantum dots,” Appl. Phys. Lett. 78(9), 1171–1173 (2001).
[Crossref]

Ji, H.-M.

F. Gao, S. Luo, H.-M. Ji, X.-G. Yang, and T. Yang, “Enhanced performance of tunable external-cavity 1.5 mu m InAs/InP quantum dot lasers using facet coating,” Appl. Opt. 54(3), 472–476 (2015).
[Crossref]

S. Luo, H.-M. Ji, X.-G. Yang, and T. Yang, “Impact of double-cap procedure on the characteristics of InAs/InGaAsP/InP quantum dots grown by metal-organic chemical vapor deposition,” J. Cryst. Growth 375, 100–103 (2013).
[Crossref]

Kim, H. D.

H. D. Kim, W. G. Jeong, J. H. Lee, J. S. Yim, D. Lee, R. Stevenson, P. D. Dapkus, J. W. Jang, and S. H. Pyun, “Continuous-wave operation of 1.5 μm InGaAs/InGaAsP/InP quantum dot lasers at room temperature,” Appl. Phys. Lett. 87(8), 083110 (2005).
[Crossref]

Kim, Y. D.

S. Yoon, Y. Moon, T.-W. Lee, E. Yoon, and Y. D. Kim, “Effects of As/P exchange reaction on the formation of InAs/InP quantum dots,” Appl. Phys. Lett. 74(14), 2029–2031 (1999).
[Crossref]

Konig, W.

L. Ricci, M. Weidemuller, T. Esslinger, A. Hemmerich, C. Zimmermann, V. Vuletic, W. Konig, and T. W. Hansch, “A compact grating-stabilized diode-laser system for atomic physics,” Opt. Commun. 117(5-6), 541–549 (1995).
[Crossref]

Kop’ev, P. S.

A. E. Zhukov, A. R. Kovsh, N. A. Maleev, S. S. Mikhrin, V. M. Ustinov, A. F. Tsatsul’nikov, M. V. Maximov, B. V. Volovik, D. A. Bedarev, Y. M. Shernyakov, P. S. Kop’ev, Z. I. Alferov, N. N. Ledentsov, and D. Bimberg, “Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates,” Appl. Phys. Lett. 75(13), 1926–1928 (1999).
[Crossref]

Kovsh, A. R.

A. E. Zhukov, A. R. Kovsh, N. A. Maleev, S. S. Mikhrin, V. M. Ustinov, A. F. Tsatsul’nikov, M. V. Maximov, B. V. Volovik, D. A. Bedarev, Y. M. Shernyakov, P. S. Kop’ev, Z. I. Alferov, N. N. Ledentsov, and D. Bimberg, “Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates,” Appl. Phys. Lett. 75(13), 1926–1928 (1999).
[Crossref]

Krakowski, M.

Lapointe, J.

G. Ortner, C. N. Allen, C. Dion, P. Barrios, D. Poitras, D. Dalacu, G. Pakulski, J. Lapointe, P. J. Poole, W. Render, and S. Raymond, “External cavity InAs/InP quantum dot laser with a tuning range of 166 nm,” Appl. Phys. Lett. 88(12), 121119 (2006).
[Crossref]

Ledentsov, N. N.

A. E. Zhukov, A. R. Kovsh, N. A. Maleev, S. S. Mikhrin, V. M. Ustinov, A. F. Tsatsul’nikov, M. V. Maximov, B. V. Volovik, D. A. Bedarev, Y. M. Shernyakov, P. S. Kop’ev, Z. I. Alferov, N. N. Ledentsov, and D. Bimberg, “Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates,” Appl. Phys. Lett. 75(13), 1926–1928 (1999).
[Crossref]

Lee, B. T.

W. G. Jeong, P. D. Dapkus, U. H. Lee, J. S. Yim, D. Lee, and B. T. Lee, “Epitaxial growth and optical characterization of InAs/InGaAsP/InP self-assembled quantum dots,” Appl. Phys. Lett. 78(9), 1171–1173 (2001).
[Crossref]

Lee, D.

H. D. Kim, W. G. Jeong, J. H. Lee, J. S. Yim, D. Lee, R. Stevenson, P. D. Dapkus, J. W. Jang, and S. H. Pyun, “Continuous-wave operation of 1.5 μm InGaAs/InGaAsP/InP quantum dot lasers at room temperature,” Appl. Phys. Lett. 87(8), 083110 (2005).
[Crossref]

W. G. Jeong, P. D. Dapkus, U. H. Lee, J. S. Yim, D. Lee, and B. T. Lee, “Epitaxial growth and optical characterization of InAs/InGaAsP/InP self-assembled quantum dots,” Appl. Phys. Lett. 78(9), 1171–1173 (2001).
[Crossref]

Lee, J. H.

H. D. Kim, W. G. Jeong, J. H. Lee, J. S. Yim, D. Lee, R. Stevenson, P. D. Dapkus, J. W. Jang, and S. H. Pyun, “Continuous-wave operation of 1.5 μm InGaAs/InGaAsP/InP quantum dot lasers at room temperature,” Appl. Phys. Lett. 87(8), 083110 (2005).
[Crossref]

Lee, T.-W.

S. Yoon, Y. Moon, T.-W. Lee, E. Yoon, and Y. D. Kim, “Effects of As/P exchange reaction on the formation of InAs/InP quantum dots,” Appl. Phys. Lett. 74(14), 2029–2031 (1999).
[Crossref]

Lee, U. H.

W. G. Jeong, P. D. Dapkus, U. H. Lee, J. S. Yim, D. Lee, and B. T. Lee, “Epitaxial growth and optical characterization of InAs/InGaAsP/InP self-assembled quantum dots,” Appl. Phys. Lett. 78(9), 1171–1173 (2001).
[Crossref]

Lester, L.

H. Li, G. Liu, P. Varangis, T. Newell, A. Stintz, B. Fuchs, K. Malloy, and L. Lester, “150-nm tuning range in a grating-coupled external cavity quantum-dot laser,” IEEE Photonics Technol. Lett. 12(7), 759–761 (2000).
[Crossref]

Lester, L. F.

P. M. Varangis, H. Li, G. T. Liu, T. C. Newell, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, “Low-threshold quantum dot lasers with 201 nm tuning range,” Electron. Lett. 36(18), 1544–1545 (2000).
[Crossref]

L. F. Lester, A. Stintz, H. Li, T. C. Newell, E. A. Pease, B. A. Fuchs, and K. J. Malloy, “Optical characteristics of 1.24-mu m InAs quantum-dot laser diodes,” IEEE Photonics Technol. Lett. 11(8), 931–933 (1999).
[Crossref]

Li, H.

H. Li, G. Liu, P. Varangis, T. Newell, A. Stintz, B. Fuchs, K. Malloy, and L. Lester, “150-nm tuning range in a grating-coupled external cavity quantum-dot laser,” IEEE Photonics Technol. Lett. 12(7), 759–761 (2000).
[Crossref]

P. M. Varangis, H. Li, G. T. Liu, T. C. Newell, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, “Low-threshold quantum dot lasers with 201 nm tuning range,” Electron. Lett. 36(18), 1544–1545 (2000).
[Crossref]

L. F. Lester, A. Stintz, H. Li, T. C. Newell, E. A. Pease, B. A. Fuchs, and K. J. Malloy, “Optical characteristics of 1.24-mu m InAs quantum-dot laser diodes,” IEEE Photonics Technol. Lett. 11(8), 931–933 (1999).
[Crossref]

Li, S.

P. Chen, Q. Gong, C. Cao, S. Li, Y. Wang, Q. Liu, L. Yue, Y. Zhang, S. Feng, C. Ma, and H. L. Wang, “High performance external cavity InAs/InP quantum dot lasers,” Appl. Phys. Lett. 98(12), 121102 (2011).
[Crossref]

Liu, G.

H. Li, G. Liu, P. Varangis, T. Newell, A. Stintz, B. Fuchs, K. Malloy, and L. Lester, “150-nm tuning range in a grating-coupled external cavity quantum-dot laser,” IEEE Photonics Technol. Lett. 12(7), 759–761 (2000).
[Crossref]

Liu, G. T.

P. M. Varangis, H. Li, G. T. Liu, T. C. Newell, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, “Low-threshold quantum dot lasers with 201 nm tuning range,” Electron. Lett. 36(18), 1544–1545 (2000).
[Crossref]

Liu, Q.

P. Chen, Q. Gong, C. Cao, S. Li, Y. Wang, Q. Liu, L. Yue, Y. Zhang, S. Feng, C. Ma, and H. L. Wang, “High performance external cavity InAs/InP quantum dot lasers,” Appl. Phys. Lett. 98(12), 121102 (2011).
[Crossref]

Liu, W. K.

Luo, S.

F. Gao, S. Luo, H.-M. Ji, X.-G. Yang, and T. Yang, “Enhanced performance of tunable external-cavity 1.5 mu m InAs/InP quantum dot lasers using facet coating,” Appl. Opt. 54(3), 472–476 (2015).
[Crossref]

S. Luo, H.-M. Ji, X.-G. Yang, and T. Yang, “Impact of double-cap procedure on the characteristics of InAs/InGaAsP/InP quantum dots grown by metal-organic chemical vapor deposition,” J. Cryst. Growth 375, 100–103 (2013).
[Crossref]

Ma, C.

P. Chen, Q. Gong, C. Cao, S. Li, Y. Wang, Q. Liu, L. Yue, Y. Zhang, S. Feng, C. Ma, and H. L. Wang, “High performance external cavity InAs/InP quantum dot lasers,” Appl. Phys. Lett. 98(12), 121102 (2011).
[Crossref]

Maleev, N. A.

A. E. Zhukov, A. R. Kovsh, N. A. Maleev, S. S. Mikhrin, V. M. Ustinov, A. F. Tsatsul’nikov, M. V. Maximov, B. V. Volovik, D. A. Bedarev, Y. M. Shernyakov, P. S. Kop’ev, Z. I. Alferov, N. N. Ledentsov, and D. Bimberg, “Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates,” Appl. Phys. Lett. 75(13), 1926–1928 (1999).
[Crossref]

Malloy, K.

H. Li, G. Liu, P. Varangis, T. Newell, A. Stintz, B. Fuchs, K. Malloy, and L. Lester, “150-nm tuning range in a grating-coupled external cavity quantum-dot laser,” IEEE Photonics Technol. Lett. 12(7), 759–761 (2000).
[Crossref]

Malloy, K. J.

P. M. Varangis, H. Li, G. T. Liu, T. C. Newell, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, “Low-threshold quantum dot lasers with 201 nm tuning range,” Electron. Lett. 36(18), 1544–1545 (2000).
[Crossref]

L. F. Lester, A. Stintz, H. Li, T. C. Newell, E. A. Pease, B. A. Fuchs, and K. J. Malloy, “Optical characteristics of 1.24-mu m InAs quantum-dot laser diodes,” IEEE Photonics Technol. Lett. 11(8), 931–933 (1999).
[Crossref]

Maximov, M. V.

A. E. Zhukov, A. R. Kovsh, N. A. Maleev, S. S. Mikhrin, V. M. Ustinov, A. F. Tsatsul’nikov, M. V. Maximov, B. V. Volovik, D. A. Bedarev, Y. M. Shernyakov, P. S. Kop’ev, Z. I. Alferov, N. N. Ledentsov, and D. Bimberg, “Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates,” Appl. Phys. Lett. 75(13), 1926–1928 (1999).
[Crossref]

Mermelstein, C.

Mikhrin, S. S.

A. E. Zhukov, A. R. Kovsh, N. A. Maleev, S. S. Mikhrin, V. M. Ustinov, A. F. Tsatsul’nikov, M. V. Maximov, B. V. Volovik, D. A. Bedarev, Y. M. Shernyakov, P. S. Kop’ev, Z. I. Alferov, N. N. Ledentsov, and D. Bimberg, “Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates,” Appl. Phys. Lett. 75(13), 1926–1928 (1999).
[Crossref]

Montrosset, I.

Moon, Y.

S. Yoon, Y. Moon, T.-W. Lee, E. Yoon, and Y. D. Kim, “Effects of As/P exchange reaction on the formation of InAs/InP quantum dots,” Appl. Phys. Lett. 74(14), 2029–2031 (1999).
[Crossref]

Muller-Kirsch, L.

K. Pötschke, L. Muller-Kirsch, R. Heitz, R. L. Sellin, U. W. Pohl, D. Bimberg, N. Zakharov, and P. Werner, “Ripening of self-organized InAs quantum dots,” Physica E (Amsterdam) 21(2-4), 606–610 (2004).
[Crossref]

Newell, T.

H. Li, G. Liu, P. Varangis, T. Newell, A. Stintz, B. Fuchs, K. Malloy, and L. Lester, “150-nm tuning range in a grating-coupled external cavity quantum-dot laser,” IEEE Photonics Technol. Lett. 12(7), 759–761 (2000).
[Crossref]

Newell, T. C.

P. M. Varangis, H. Li, G. T. Liu, T. C. Newell, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, “Low-threshold quantum dot lasers with 201 nm tuning range,” Electron. Lett. 36(18), 1544–1545 (2000).
[Crossref]

L. F. Lester, A. Stintz, H. Li, T. C. Newell, E. A. Pease, B. A. Fuchs, and K. J. Malloy, “Optical characteristics of 1.24-mu m InAs quantum-dot laser diodes,” IEEE Photonics Technol. Lett. 11(8), 931–933 (1999).
[Crossref]

Ni, H. Q.

J. L. Xiao, Y. Z. Huang, Y. Du, H. Zhao, H. Q. Ni, and Z. C. Niu, “Gain measurement and anomalous decrease of peak gain at long wavelength for InAs/GaAs quantum-dot lasers,” Chin. Phys. Lett. 24(10), 2984–2986 (2007).
[Crossref]

Niu, Z. C.

J. L. Xiao, Y. Z. Huang, Y. Du, H. Zhao, H. Q. Ni, and Z. C. Niu, “Gain measurement and anomalous decrease of peak gain at long wavelength for InAs/GaAs quantum-dot lasers,” Chin. Phys. Lett. 24(10), 2984–2986 (2007).
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Olesberg, J. T.

Ooi, B. S.

Ortner, G.

G. Ortner, C. N. Allen, C. Dion, P. Barrios, D. Poitras, D. Dalacu, G. Pakulski, J. Lapointe, P. J. Poole, W. Render, and S. Raymond, “External cavity InAs/InP quantum dot laser with a tuning range of 166 nm,” Appl. Phys. Lett. 88(12), 121119 (2006).
[Crossref]

Pakulski, G.

G. Ortner, C. N. Allen, C. Dion, P. Barrios, D. Poitras, D. Dalacu, G. Pakulski, J. Lapointe, P. J. Poole, W. Render, and S. Raymond, “External cavity InAs/InP quantum dot laser with a tuning range of 166 nm,” Appl. Phys. Lett. 88(12), 121119 (2006).
[Crossref]

Pease, E. A.

L. F. Lester, A. Stintz, H. Li, T. C. Newell, E. A. Pease, B. A. Fuchs, and K. J. Malloy, “Optical characteristics of 1.24-mu m InAs quantum-dot laser diodes,” IEEE Photonics Technol. Lett. 11(8), 931–933 (1999).
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Platt, U.

Pohl, U. W.

K. Pötschke, L. Muller-Kirsch, R. Heitz, R. L. Sellin, U. W. Pohl, D. Bimberg, N. Zakharov, and P. Werner, “Ripening of self-organized InAs quantum dots,” Physica E (Amsterdam) 21(2-4), 606–610 (2004).
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Poitras, D.

G. Ortner, C. N. Allen, C. Dion, P. Barrios, D. Poitras, D. Dalacu, G. Pakulski, J. Lapointe, P. J. Poole, W. Render, and S. Raymond, “External cavity InAs/InP quantum dot laser with a tuning range of 166 nm,” Appl. Phys. Lett. 88(12), 121119 (2006).
[Crossref]

Poole, P. J.

G. Ortner, C. N. Allen, C. Dion, P. Barrios, D. Poitras, D. Dalacu, G. Pakulski, J. Lapointe, P. J. Poole, W. Render, and S. Raymond, “External cavity InAs/InP quantum dot laser with a tuning range of 166 nm,” Appl. Phys. Lett. 88(12), 121119 (2006).
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Pötschke, K.

K. Pötschke, L. Muller-Kirsch, R. Heitz, R. L. Sellin, U. W. Pohl, D. Bimberg, N. Zakharov, and P. Werner, “Ripening of self-organized InAs quantum dots,” Physica E (Amsterdam) 21(2-4), 606–610 (2004).
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Pyun, S. H.

H. D. Kim, W. G. Jeong, J. H. Lee, J. S. Yim, D. Lee, R. Stevenson, P. D. Dapkus, J. W. Jang, and S. H. Pyun, “Continuous-wave operation of 1.5 μm InGaAs/InGaAsP/InP quantum dot lasers at room temperature,” Appl. Phys. Lett. 87(8), 083110 (2005).
[Crossref]

Raymond, S.

G. Ortner, C. N. Allen, C. Dion, P. Barrios, D. Poitras, D. Dalacu, G. Pakulski, J. Lapointe, P. J. Poole, W. Render, and S. Raymond, “External cavity InAs/InP quantum dot laser with a tuning range of 166 nm,” Appl. Phys. Lett. 88(12), 121119 (2006).
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G. Ortner, C. N. Allen, C. Dion, P. Barrios, D. Poitras, D. Dalacu, G. Pakulski, J. Lapointe, P. J. Poole, W. Render, and S. Raymond, “External cavity InAs/InP quantum dot laser with a tuning range of 166 nm,” Appl. Phys. Lett. 88(12), 121119 (2006).
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L. Ricci, M. Weidemuller, T. Esslinger, A. Hemmerich, C. Zimmermann, V. Vuletic, W. Konig, and T. W. Hansch, “A compact grating-stabilized diode-laser system for atomic physics,” Opt. Commun. 117(5-6), 541–549 (1995).
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G. P. Barwood, P. Gill, and W. R. C. Rowley, “High-accuracy length metrology using multiple-stage swept-frequency interferometry with laser diodes,” Meas. Sci. Technol. 9(7), 1036–1041 (1998).
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Sears, K.

K. Sears, H. H. Tan, J. Wong-Leung, and C. Jagadish, “The role of arsine in the self-assembled growth of InAs/GaAs quantum dots by metal organic chemical vapor deposition,” J. Appl. Phys. 99(4), 044908 (2006).
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Sellin, R. L.

K. Pötschke, L. Muller-Kirsch, R. Heitz, R. L. Sellin, U. W. Pohl, D. Bimberg, N. Zakharov, and P. Werner, “Ripening of self-organized InAs quantum dots,” Physica E (Amsterdam) 21(2-4), 606–610 (2004).
[Crossref]

Shernyakov, Y. M.

A. E. Zhukov, A. R. Kovsh, N. A. Maleev, S. S. Mikhrin, V. M. Ustinov, A. F. Tsatsul’nikov, M. V. Maximov, B. V. Volovik, D. A. Bedarev, Y. M. Shernyakov, P. S. Kop’ev, Z. I. Alferov, N. N. Ledentsov, and D. Bimberg, “Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates,” Appl. Phys. Lett. 75(13), 1926–1928 (1999).
[Crossref]

Stevenson, R.

H. D. Kim, W. G. Jeong, J. H. Lee, J. S. Yim, D. Lee, R. Stevenson, P. D. Dapkus, J. W. Jang, and S. H. Pyun, “Continuous-wave operation of 1.5 μm InGaAs/InGaAsP/InP quantum dot lasers at room temperature,” Appl. Phys. Lett. 87(8), 083110 (2005).
[Crossref]

Stintz, A.

H. Li, G. Liu, P. Varangis, T. Newell, A. Stintz, B. Fuchs, K. Malloy, and L. Lester, “150-nm tuning range in a grating-coupled external cavity quantum-dot laser,” IEEE Photonics Technol. Lett. 12(7), 759–761 (2000).
[Crossref]

P. M. Varangis, H. Li, G. T. Liu, T. C. Newell, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, “Low-threshold quantum dot lasers with 201 nm tuning range,” Electron. Lett. 36(18), 1544–1545 (2000).
[Crossref]

L. F. Lester, A. Stintz, H. Li, T. C. Newell, E. A. Pease, B. A. Fuchs, and K. J. Malloy, “Optical characteristics of 1.24-mu m InAs quantum-dot laser diodes,” IEEE Photonics Technol. Lett. 11(8), 931–933 (1999).
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H. Tabuchi and H. Ishikawa, “External grating tunable MQW laser with wide tuning range of 240 nm,” Electron. Lett. 26(11), 742–743 (1990).
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K. Sears, H. H. Tan, J. Wong-Leung, and C. Jagadish, “The role of arsine in the self-assembled growth of InAs/GaAs quantum dots by metal organic chemical vapor deposition,” J. Appl. Phys. 99(4), 044908 (2006).
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Teo, S. L.

C. K. Chia, S. J. Chua, J. R. Dong, and S. L. Teo, “Ultrawide band quantum dot light emitting device by postfabrication laser annealing,” Appl. Phys. Lett. 90(6), 061101 (2007).
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Tsatsul’nikov, A. F.

A. E. Zhukov, A. R. Kovsh, N. A. Maleev, S. S. Mikhrin, V. M. Ustinov, A. F. Tsatsul’nikov, M. V. Maximov, B. V. Volovik, D. A. Bedarev, Y. M. Shernyakov, P. S. Kop’ev, Z. I. Alferov, N. N. Ledentsov, and D. Bimberg, “Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates,” Appl. Phys. Lett. 75(13), 1926–1928 (1999).
[Crossref]

Ustinov, V. M.

A. E. Zhukov, A. R. Kovsh, N. A. Maleev, S. S. Mikhrin, V. M. Ustinov, A. F. Tsatsul’nikov, M. V. Maximov, B. V. Volovik, D. A. Bedarev, Y. M. Shernyakov, P. S. Kop’ev, Z. I. Alferov, N. N. Ledentsov, and D. Bimberg, “Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates,” Appl. Phys. Lett. 75(13), 1926–1928 (1999).
[Crossref]

Varangis, P.

H. Li, G. Liu, P. Varangis, T. Newell, A. Stintz, B. Fuchs, K. Malloy, and L. Lester, “150-nm tuning range in a grating-coupled external cavity quantum-dot laser,” IEEE Photonics Technol. Lett. 12(7), 759–761 (2000).
[Crossref]

Varangis, P. M.

P. M. Varangis, H. Li, G. T. Liu, T. C. Newell, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, “Low-threshold quantum dot lasers with 201 nm tuning range,” Electron. Lett. 36(18), 1544–1545 (2000).
[Crossref]

Volovik, B. V.

A. E. Zhukov, A. R. Kovsh, N. A. Maleev, S. S. Mikhrin, V. M. Ustinov, A. F. Tsatsul’nikov, M. V. Maximov, B. V. Volovik, D. A. Bedarev, Y. M. Shernyakov, P. S. Kop’ev, Z. I. Alferov, N. N. Ledentsov, and D. Bimberg, “Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates,” Appl. Phys. Lett. 75(13), 1926–1928 (1999).
[Crossref]

Vuletic, V.

L. Ricci, M. Weidemuller, T. Esslinger, A. Hemmerich, C. Zimmermann, V. Vuletic, W. Konig, and T. W. Hansch, “A compact grating-stabilized diode-laser system for atomic physics,” Opt. Commun. 117(5-6), 541–549 (1995).
[Crossref]

Wagner, J.

Wang, H. L.

P. Chen, Q. Gong, C. Cao, S. Li, Y. Wang, Q. Liu, L. Yue, Y. Zhang, S. Feng, C. Ma, and H. L. Wang, “High performance external cavity InAs/InP quantum dot lasers,” Appl. Phys. Lett. 98(12), 121102 (2011).
[Crossref]

Wang, Y.

P. Chen, Q. Gong, C. Cao, S. Li, Y. Wang, Q. Liu, L. Yue, Y. Zhang, S. Feng, C. Ma, and H. L. Wang, “High performance external cavity InAs/InP quantum dot lasers,” Appl. Phys. Lett. 98(12), 121102 (2011).
[Crossref]

Weidemuller, M.

L. Ricci, M. Weidemuller, T. Esslinger, A. Hemmerich, C. Zimmermann, V. Vuletic, W. Konig, and T. W. Hansch, “A compact grating-stabilized diode-laser system for atomic physics,” Opt. Commun. 117(5-6), 541–549 (1995).
[Crossref]

Werner, P.

K. Pötschke, L. Muller-Kirsch, R. Heitz, R. L. Sellin, U. W. Pohl, D. Bimberg, N. Zakharov, and P. Werner, “Ripening of self-organized InAs quantum dots,” Physica E (Amsterdam) 21(2-4), 606–610 (2004).
[Crossref]

Wolfrum, J.

Wong-Leung, J.

K. Sears, H. H. Tan, J. Wong-Leung, and C. Jagadish, “The role of arsine in the self-assembled growth of InAs/GaAs quantum dots by metal organic chemical vapor deposition,” J. Appl. Phys. 99(4), 044908 (2006).
[Crossref]

Woodworth, S. C.

Wu, Y.

Xiao, J. L.

J. L. Xiao, Y. Z. Huang, Y. Du, H. Zhao, H. Q. Ni, and Z. C. Niu, “Gain measurement and anomalous decrease of peak gain at long wavelength for InAs/GaAs quantum-dot lasers,” Chin. Phys. Lett. 24(10), 2984–2986 (2007).
[Crossref]

Yang, T.

F. Gao, S. Luo, H.-M. Ji, X.-G. Yang, and T. Yang, “Enhanced performance of tunable external-cavity 1.5 mu m InAs/InP quantum dot lasers using facet coating,” Appl. Opt. 54(3), 472–476 (2015).
[Crossref]

S. Luo, H.-M. Ji, X.-G. Yang, and T. Yang, “Impact of double-cap procedure on the characteristics of InAs/InGaAsP/InP quantum dots grown by metal-organic chemical vapor deposition,” J. Cryst. Growth 375, 100–103 (2013).
[Crossref]

Yang, X.-G.

F. Gao, S. Luo, H.-M. Ji, X.-G. Yang, and T. Yang, “Enhanced performance of tunable external-cavity 1.5 mu m InAs/InP quantum dot lasers using facet coating,” Appl. Opt. 54(3), 472–476 (2015).
[Crossref]

S. Luo, H.-M. Ji, X.-G. Yang, and T. Yang, “Impact of double-cap procedure on the characteristics of InAs/InGaAsP/InP quantum dots grown by metal-organic chemical vapor deposition,” J. Cryst. Growth 375, 100–103 (2013).
[Crossref]

Yim, J. S.

H. D. Kim, W. G. Jeong, J. H. Lee, J. S. Yim, D. Lee, R. Stevenson, P. D. Dapkus, J. W. Jang, and S. H. Pyun, “Continuous-wave operation of 1.5 μm InGaAs/InGaAsP/InP quantum dot lasers at room temperature,” Appl. Phys. Lett. 87(8), 083110 (2005).
[Crossref]

W. G. Jeong, P. D. Dapkus, U. H. Lee, J. S. Yim, D. Lee, and B. T. Lee, “Epitaxial growth and optical characterization of InAs/InGaAsP/InP self-assembled quantum dots,” Appl. Phys. Lett. 78(9), 1171–1173 (2001).
[Crossref]

Yoon, E.

S. Yoon, Y. Moon, T.-W. Lee, E. Yoon, and Y. D. Kim, “Effects of As/P exchange reaction on the formation of InAs/InP quantum dots,” Appl. Phys. Lett. 74(14), 2029–2031 (1999).
[Crossref]

Yoon, S.

S. Yoon, Y. Moon, T.-W. Lee, E. Yoon, and Y. D. Kim, “Effects of As/P exchange reaction on the formation of InAs/InP quantum dots,” Appl. Phys. Lett. 74(14), 2029–2031 (1999).
[Crossref]

Yue, L.

P. Chen, Q. Gong, C. Cao, S. Li, Y. Wang, Q. Liu, L. Yue, Y. Zhang, S. Feng, C. Ma, and H. L. Wang, “High performance external cavity InAs/InP quantum dot lasers,” Appl. Phys. Lett. 98(12), 121102 (2011).
[Crossref]

Zakharov, N.

K. Pötschke, L. Muller-Kirsch, R. Heitz, R. L. Sellin, U. W. Pohl, D. Bimberg, N. Zakharov, and P. Werner, “Ripening of self-organized InAs quantum dots,” Physica E (Amsterdam) 21(2-4), 606–610 (2004).
[Crossref]

Zhang, Y.

P. Chen, Q. Gong, C. Cao, S. Li, Y. Wang, Q. Liu, L. Yue, Y. Zhang, S. Feng, C. Ma, and H. L. Wang, “High performance external cavity InAs/InP quantum dot lasers,” Appl. Phys. Lett. 98(12), 121102 (2011).
[Crossref]

Zhao, H.

J. L. Xiao, Y. Z. Huang, Y. Du, H. Zhao, H. Q. Ni, and Z. C. Niu, “Gain measurement and anomalous decrease of peak gain at long wavelength for InAs/GaAs quantum-dot lasers,” Chin. Phys. Lett. 24(10), 2984–2986 (2007).
[Crossref]

Zhukov, A. E.

A. E. Zhukov, A. R. Kovsh, N. A. Maleev, S. S. Mikhrin, V. M. Ustinov, A. F. Tsatsul’nikov, M. V. Maximov, B. V. Volovik, D. A. Bedarev, Y. M. Shernyakov, P. S. Kop’ev, Z. I. Alferov, N. N. Ledentsov, and D. Bimberg, “Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates,” Appl. Phys. Lett. 75(13), 1926–1928 (1999).
[Crossref]

Zimmermann, C.

L. Ricci, M. Weidemuller, T. Esslinger, A. Hemmerich, C. Zimmermann, V. Vuletic, W. Konig, and T. W. Hansch, “A compact grating-stabilized diode-laser system for atomic physics,” Opt. Commun. 117(5-6), 541–549 (1995).
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Zimmermann, R.

Appl. Opt. (3)

Appl. Phys. Lett. (8)

H. D. Kim, W. G. Jeong, J. H. Lee, J. S. Yim, D. Lee, R. Stevenson, P. D. Dapkus, J. W. Jang, and S. H. Pyun, “Continuous-wave operation of 1.5 μm InGaAs/InGaAsP/InP quantum dot lasers at room temperature,” Appl. Phys. Lett. 87(8), 083110 (2005).
[Crossref]

A. E. Zhukov, A. R. Kovsh, N. A. Maleev, S. S. Mikhrin, V. M. Ustinov, A. F. Tsatsul’nikov, M. V. Maximov, B. V. Volovik, D. A. Bedarev, Y. M. Shernyakov, P. S. Kop’ev, Z. I. Alferov, N. N. Ledentsov, and D. Bimberg, “Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates,” Appl. Phys. Lett. 75(13), 1926–1928 (1999).
[Crossref]

M. Grundmann, “Feasibility of 5 Gbit/s wavelength division multiplexing using quantum dot lasers,” Appl. Phys. Lett. 77(26), 4265–4267 (2000).
[Crossref]

C. K. Chia, S. J. Chua, J. R. Dong, and S. L. Teo, “Ultrawide band quantum dot light emitting device by postfabrication laser annealing,” Appl. Phys. Lett. 90(6), 061101 (2007).
[Crossref]

G. Ortner, C. N. Allen, C. Dion, P. Barrios, D. Poitras, D. Dalacu, G. Pakulski, J. Lapointe, P. J. Poole, W. Render, and S. Raymond, “External cavity InAs/InP quantum dot laser with a tuning range of 166 nm,” Appl. Phys. Lett. 88(12), 121119 (2006).
[Crossref]

P. Chen, Q. Gong, C. Cao, S. Li, Y. Wang, Q. Liu, L. Yue, Y. Zhang, S. Feng, C. Ma, and H. L. Wang, “High performance external cavity InAs/InP quantum dot lasers,” Appl. Phys. Lett. 98(12), 121102 (2011).
[Crossref]

S. Yoon, Y. Moon, T.-W. Lee, E. Yoon, and Y. D. Kim, “Effects of As/P exchange reaction on the formation of InAs/InP quantum dots,” Appl. Phys. Lett. 74(14), 2029–2031 (1999).
[Crossref]

W. G. Jeong, P. D. Dapkus, U. H. Lee, J. S. Yim, D. Lee, and B. T. Lee, “Epitaxial growth and optical characterization of InAs/InGaAsP/InP self-assembled quantum dots,” Appl. Phys. Lett. 78(9), 1171–1173 (2001).
[Crossref]

Appl. Spectrosc. (1)

Chin. Phys. Lett. (1)

J. L. Xiao, Y. Z. Huang, Y. Du, H. Zhao, H. Q. Ni, and Z. C. Niu, “Gain measurement and anomalous decrease of peak gain at long wavelength for InAs/GaAs quantum-dot lasers,” Chin. Phys. Lett. 24(10), 2984–2986 (2007).
[Crossref]

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[Crossref]

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IEEE Photonics Technol. Lett. (2)

L. F. Lester, A. Stintz, H. Li, T. C. Newell, E. A. Pease, B. A. Fuchs, and K. J. Malloy, “Optical characteristics of 1.24-mu m InAs quantum-dot laser diodes,” IEEE Photonics Technol. Lett. 11(8), 931–933 (1999).
[Crossref]

H. Li, G. Liu, P. Varangis, T. Newell, A. Stintz, B. Fuchs, K. Malloy, and L. Lester, “150-nm tuning range in a grating-coupled external cavity quantum-dot laser,” IEEE Photonics Technol. Lett. 12(7), 759–761 (2000).
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J. Appl. Phys. (1)

K. Sears, H. H. Tan, J. Wong-Leung, and C. Jagadish, “The role of arsine in the self-assembled growth of InAs/GaAs quantum dots by metal organic chemical vapor deposition,” J. Appl. Phys. 99(4), 044908 (2006).
[Crossref]

J. Cryst. Growth (1)

S. Luo, H.-M. Ji, X.-G. Yang, and T. Yang, “Impact of double-cap procedure on the characteristics of InAs/InGaAsP/InP quantum dots grown by metal-organic chemical vapor deposition,” J. Cryst. Growth 375, 100–103 (2013).
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[Crossref]

Opt. Commun. (1)

L. Ricci, M. Weidemuller, T. Esslinger, A. Hemmerich, C. Zimmermann, V. Vuletic, W. Konig, and T. W. Hansch, “A compact grating-stabilized diode-laser system for atomic physics,” Opt. Commun. 117(5-6), 541–549 (1995).
[Crossref]

Opt. Express (1)

Opt. Lett. (1)

Physica E (Amsterdam) (1)

K. Pötschke, L. Muller-Kirsch, R. Heitz, R. L. Sellin, U. W. Pohl, D. Bimberg, N. Zakharov, and P. Werner, “Ripening of self-organized InAs quantum dots,” Physica E (Amsterdam) 21(2-4), 606–610 (2004).
[Crossref]

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Figures (6)

Fig. 1
Fig. 1 Effect of AsH3 flow on QD structure PL and lasing spectra. (a) RT PL (dash-dot line) and lasing at 1.1 × Ith (solid line) spectra for structure A, (b) RT PL (dotted line) and lasing at 1.1 × Ith (solid line) spectra for structure B.
Fig. 2
Fig. 2 Net gain spectra at various CW injection currents for 1 mm long QD lasers with (a) structure A and (b) structure B. The dashed arrow indicates the direction of gain change with increasing injection current.
Fig. 3
Fig. 3 Tuning spectra of EC lasers based on 2 mm long QD gain devices with (a) structure A and (b) structure B, driven by a pulsed injection current of 800 mA (1 kHz repetition rate and 3% duty cycle).
Fig. 4
Fig. 4 L-I curves of the free-running QD lasers (blue dotted line and red dashed line) and the EC lasers tuned to 1524 nm (blue solid line and red dash-dot line) for structures A and B, respectively.
Fig. 5
Fig. 5 Tuning spectra of 2 mm long EC InAs/InP QD gain device using structure B and AR/HR coating driven by a pulsed injection current of 1500 mA (1 kHz repetition rate and 3% duty cycle).
Fig. 6
Fig. 6 (a) Threshold current density versus tuning wavelength Dependence of threshold current density on wavelength and (b) L-I curves at the wavelengths of 1452 nm (black solid line), 1500 nm (blue dashed line) and 1545 nm (red dotted line) for the EC laser fabricated with structure B and AR/HR coating. The inset shows the output power as a function of lasing wavelength at a pulsed injection current of 1500 mA.

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