Abstract

A novel high-speed Mach-Zehnder modulator (MZM) fully integrated into a 90 nm CMOS process is presented. The MZM features ‘double-pass’ optical phase shifter segments, and the first use of integrated inductors in a ‘velocity-matched’ distributed-electrode configuration.

© 2015 Optical Society of America

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2015 (1)

D. M. Gill, J. E. Proesel, C. Xiong, J. S. Orcutt, J. C. Rosenberg, M. Khater, T. Barwicz, S. Assefa, S. M. Shank, C. Reinholm, J. Ellis-Monaghan, E. Kiewra, S. Kamlapurkar, C. M. Breslin, W. M. J. Green, W. Haensch, and Y. A. Vlasov, “Demonstration of a high extinction ratio monolithic CMOS integrated nano-photonic transmitter and 16 Gb/s optical link,” IEEE J. Sel. Top. Quantum Electron. 21(4), 3400311 (2015).

2014 (2)

2013 (8)

G. T. Reed, G. Z. Mashanovich, F. Y. Gardes, M. Nedeljkovic, Y. Hu, D. J. Thomson, K. Li, P. R. Wilson, S. W. Chen, and S. S. Hsu, “Recent breakthroughs in carrier depletion based silicon optical modulators,” Nanophotonics 3(4–5), 1–18 (2013).

X. Li, X. Xiao, H. Xu, Z. Li, T. Chu, J. Yu, and Y. Yu, “Highly efficient silicon Michelson interferometer modulators,” IEEE Photon. Technol. Lett. 25(5), 407–409 (2013).
[Crossref]

X. Xiao, H. Xu, X. Li, Z. Li, T. Chu, Y. Yu, and J. Yu, “High-speed, low-loss silicon Mach-Zehnder modulators with doping optimization,” Opt. Express 21(4), 4116–4125 (2013).
[Crossref] [PubMed]

X. Tu, T. Y. Liow, J. Song, X. Luo, Q. Fang, M. Yu, and G. Q. Lo, “50-Gb/s silicon optical modulator with traveling-wave electrodes,” Opt. Express 21(10), 12776–12782 (2013).
[Crossref] [PubMed]

M. Aamer, D. J. Thomson, A. M. Gutiérrez, A. Brimont, F. Y. Gardes, G. T. Reed, J. M. Fedeli, A. Hakansson, and P. Sanchis, “10Gbit/s error-free DPSK modulation using a push–pull dual-drive silicon modulator,” Opt. Commun. 304, 107–110 (2013).
[Crossref]

M. Streshinsky, R. Ding, Y. Liu, A. Novack, Y. Yang, Y. Ma, X. Tu, E. K. Chee, A. E. Lim, P. G. Lo, T. Baehr-Jones, and M. Hochberg, “Low power 50 Gb/s silicon traveling wave Mach-Zehnder modulator near 1300 nm,” Opt. Express 21(25), 30350–30357 (2013).
[Crossref] [PubMed]

I. Goykhman, B. Desiatov, S. Ben-Ezra, J. Shappir, and U. Levy, “Optimization of efficiency-loss figure of merit in carrier-depletion silicon Mach-Zehnder optical modulator,” Opt. Express 21(17), 19518–19529 (2013).
[Crossref] [PubMed]

D. J. Thomson, F. Y. Gardes, S. Liu, H. Porte, L. Zimmermann, J.-M. Fedeli, Y. Hu, M. Nedeljkovic, X. Yang, P. Petropoulos, and G. Z. Mashanovich, “High performance Mach–Zehnder-based silicon optical modulators,” IEEE J. Sel. Top. Quantum Electron. 19(6), 3400510 (2013).
[Crossref]

2012 (7)

H. Yu and W. Bogaerts, “An equivalent circuit model of the traveling wave electrode for carrier-depletion-based silicon optical modulators,” J. Lightwave Technol. 30(11), 1602–1609 (2012).
[Crossref]

J. C. Rosenberg, W. M. J. Green, S. Assefa, D. M. Gill, T. Barwicz, M. Yang, S. M. Shank, and Y. A. Vlasov, “A 25 Gbps silicon microring modulator based on an interleaved junction,” Opt. Express 20(24), 26411–26423 (2012).
[Crossref] [PubMed]

P. Dong, L. Chen, and Y.-K. Chen, “High-speed low-voltage single-drive push-pull silicon Mach-Zehnder modulators,” Opt. Express 20(6), 6163–6169 (2012).
[PubMed]

P. Dong, C. Xie, L. Chen, L. L. Buhl, and Y. K. Chen, “112-Gb/s monolithic PDM-QPSK modulator in silicon,” Opt. Express 20(26), B624–B629 (2012).
[Crossref] [PubMed]

H. Yu, M. Pantouvaki, J. Van Campenhout, D. Korn, K. Komorowska, P. Dumon, Y. Li, P. Verheyen, P. Absil, L. Alloatti, D. Hillerkuss, J. Leuthold, R. Baets, and W. Bogaerts, “Performance tradeoff between lateral and interdigitated doping patterns for high speed carrier-depletion based silicon modulators,” Opt. Express 20(12), 12926–12938 (2012).
[Crossref] [PubMed]

T. Baehr-Jones, R. Ding, Y. Liu, A. Ayazi, T. Pinguet, N. C. Harris, M. Streshinsky, P. Lee, Y. Zhang, A. E. Lim, T. Y. Liow, S. H. Teo, G. Q. Lo, and M. Hochberg, “Ultralow drive voltage silicon traveling-wave modulator,” Opt. Express 20(11), 12014–12020 (2012).
[Crossref] [PubMed]

Y. A. Vlasov, “Silicon CMOS-integrated nano-photonics for computer and data communications beyond 100G,” IEEE Commun. Mag. 50(2), 67–72 (2012).
[Crossref]

2011 (2)

2010 (4)

D. J. Thomson, F. Y. Gardes, G. T. Reed, F. Milesi, and J. M. Fedeli, “High speed silicon optical modulator with self aligned fabrication process,” Opt. Express 18(18), 19064–19069 (2010).
[Crossref] [PubMed]

M. R. Watts, W. A. Zortman, D. C. Trotter, R. W. Young, and A. L. Lentine, “Low-voltage, compact, depletion-mode, silicon Mach-Zehnder modulator,” IEEE J. Sel. Top. Quantum Electron. 16(1), 159–164 (2010).
[Crossref]

D. M. Gill, S. S. Patel, M. Rasras, K. Y. Tu, A. E. White, Y. K. Chen, A. Pomerene, D. Carothers, R. Kamocsai, C. Hill, and J. Beattie, “CMOS-compatible Si-ring-assisted Mach-Zehnder interferometer with internal bandwidth equalization,” IEEE J. Sel. Top. Quantum Electron. 16(1), 45–52 (2010).

G. T. Reed, G. Z. Mashanovich, F. Y. Gardes, and D. J. Thomson, “Silicon optical modulators,” Nat. Photon. 4(8), 518–526 (2010).
[Crossref]

2007 (2)

A. Liu, L. Liao, D. Rubin, H. Nguyen, B. Ciftcioglu, Y. Chetrit, N. Izhaky, and M. Paniccia, “High-speed optical modulation based on carrier depletion in a silicon waveguide,” Opt. Express 15(2), 660–668 (2007).
[Crossref] [PubMed]

A. Narasimha, B. Analui, Y. Liang, T. J. Sleboda, S. Abdalla, E. Balmater, S. Gloeckner, D. Guckenberger, M. Harrison, R. G. M. P. Koumans, D. Kucharski, A. Mekis, S. Mirsaidi, D. Song, and T. Pinguet, “A fully integrated 4× 10-Gb/s DWDM optoelectronic transceiver implemented in a standard 0.13 μm CMOS SOI technology,” IEEE J. Solid-State Circuits 42(12), 2736–2744 (2007).
[Crossref]

2005 (1)

Aamer, M.

M. Aamer, D. J. Thomson, A. M. Gutiérrez, A. Brimont, F. Y. Gardes, G. T. Reed, J. M. Fedeli, A. Hakansson, and P. Sanchis, “10Gbit/s error-free DPSK modulation using a push–pull dual-drive silicon modulator,” Opt. Commun. 304, 107–110 (2013).
[Crossref]

Abdalla, S.

A. Narasimha, B. Analui, Y. Liang, T. J. Sleboda, S. Abdalla, E. Balmater, S. Gloeckner, D. Guckenberger, M. Harrison, R. G. M. P. Koumans, D. Kucharski, A. Mekis, S. Mirsaidi, D. Song, and T. Pinguet, “A fully integrated 4× 10-Gb/s DWDM optoelectronic transceiver implemented in a standard 0.13 μm CMOS SOI technology,” IEEE J. Solid-State Circuits 42(12), 2736–2744 (2007).
[Crossref]

Abed, A.

Absil, P.

Alloatti, L.

Amberg, P.

Analui, B.

A. Narasimha, B. Analui, Y. Liang, T. J. Sleboda, S. Abdalla, E. Balmater, S. Gloeckner, D. Guckenberger, M. Harrison, R. G. M. P. Koumans, D. Kucharski, A. Mekis, S. Mirsaidi, D. Song, and T. Pinguet, “A fully integrated 4× 10-Gb/s DWDM optoelectronic transceiver implemented in a standard 0.13 μm CMOS SOI technology,” IEEE J. Solid-State Circuits 42(12), 2736–2744 (2007).
[Crossref]

Asghari, M.

Assefa, S.

D. M. Gill, J. E. Proesel, C. Xiong, J. S. Orcutt, J. C. Rosenberg, M. Khater, T. Barwicz, S. Assefa, S. M. Shank, C. Reinholm, J. Ellis-Monaghan, E. Kiewra, S. Kamlapurkar, C. M. Breslin, W. M. J. Green, W. Haensch, and Y. A. Vlasov, “Demonstration of a high extinction ratio monolithic CMOS integrated nano-photonic transmitter and 16 Gb/s optical link,” IEEE J. Sel. Top. Quantum Electron. 21(4), 3400311 (2015).

J. C. Rosenberg, W. M. J. Green, S. Assefa, D. M. Gill, T. Barwicz, M. Yang, S. M. Shank, and Y. A. Vlasov, “A 25 Gbps silicon microring modulator based on an interleaved junction,” Opt. Express 20(24), 26411–26423 (2012).
[Crossref] [PubMed]

Ayazi, A.

Baehr-Jones, T.

Baets, R.

Balmater, E.

A. Narasimha, B. Analui, Y. Liang, T. J. Sleboda, S. Abdalla, E. Balmater, S. Gloeckner, D. Guckenberger, M. Harrison, R. G. M. P. Koumans, D. Kucharski, A. Mekis, S. Mirsaidi, D. Song, and T. Pinguet, “A fully integrated 4× 10-Gb/s DWDM optoelectronic transceiver implemented in a standard 0.13 μm CMOS SOI technology,” IEEE J. Solid-State Circuits 42(12), 2736–2744 (2007).
[Crossref]

Barwicz, T.

D. M. Gill, J. E. Proesel, C. Xiong, J. S. Orcutt, J. C. Rosenberg, M. Khater, T. Barwicz, S. Assefa, S. M. Shank, C. Reinholm, J. Ellis-Monaghan, E. Kiewra, S. Kamlapurkar, C. M. Breslin, W. M. J. Green, W. Haensch, and Y. A. Vlasov, “Demonstration of a high extinction ratio monolithic CMOS integrated nano-photonic transmitter and 16 Gb/s optical link,” IEEE J. Sel. Top. Quantum Electron. 21(4), 3400311 (2015).

J. C. Rosenberg, W. M. J. Green, S. Assefa, D. M. Gill, T. Barwicz, M. Yang, S. M. Shank, and Y. A. Vlasov, “A 25 Gbps silicon microring modulator based on an interleaved junction,” Opt. Express 20(24), 26411–26423 (2012).
[Crossref] [PubMed]

Beattie, J.

D. M. Gill, S. S. Patel, M. Rasras, K. Y. Tu, A. E. White, Y. K. Chen, A. Pomerene, D. Carothers, R. Kamocsai, C. Hill, and J. Beattie, “CMOS-compatible Si-ring-assisted Mach-Zehnder interferometer with internal bandwidth equalization,” IEEE J. Sel. Top. Quantum Electron. 16(1), 45–52 (2010).

Ben-Ezra, S.

Bogaerts, W.

Breslin, C. M.

D. M. Gill, J. E. Proesel, C. Xiong, J. S. Orcutt, J. C. Rosenberg, M. Khater, T. Barwicz, S. Assefa, S. M. Shank, C. Reinholm, J. Ellis-Monaghan, E. Kiewra, S. Kamlapurkar, C. M. Breslin, W. M. J. Green, W. Haensch, and Y. A. Vlasov, “Demonstration of a high extinction ratio monolithic CMOS integrated nano-photonic transmitter and 16 Gb/s optical link,” IEEE J. Sel. Top. Quantum Electron. 21(4), 3400311 (2015).

Brimont, A.

M. Aamer, D. J. Thomson, A. M. Gutiérrez, A. Brimont, F. Y. Gardes, G. T. Reed, J. M. Fedeli, A. Hakansson, and P. Sanchis, “10Gbit/s error-free DPSK modulation using a push–pull dual-drive silicon modulator,” Opt. Commun. 304, 107–110 (2013).
[Crossref]

Buckwalter, J. F.

Buhl, L. L.

Carothers, D.

D. M. Gill, S. S. Patel, M. Rasras, K. Y. Tu, A. E. White, Y. K. Chen, A. Pomerene, D. Carothers, R. Kamocsai, C. Hill, and J. Beattie, “CMOS-compatible Si-ring-assisted Mach-Zehnder interferometer with internal bandwidth equalization,” IEEE J. Sel. Top. Quantum Electron. 16(1), 45–52 (2010).

Chang, E.

Chee, E. K.

Chen, L.

Chen, S. W.

G. T. Reed, G. Z. Mashanovich, F. Y. Gardes, M. Nedeljkovic, Y. Hu, D. J. Thomson, K. Li, P. R. Wilson, S. W. Chen, and S. S. Hsu, “Recent breakthroughs in carrier depletion based silicon optical modulators,” Nanophotonics 3(4–5), 1–18 (2013).

Chen, Y. K.

P. Dong, C. Xie, L. Chen, L. L. Buhl, and Y. K. Chen, “112-Gb/s monolithic PDM-QPSK modulator in silicon,” Opt. Express 20(26), B624–B629 (2012).
[Crossref] [PubMed]

D. M. Gill, S. S. Patel, M. Rasras, K. Y. Tu, A. E. White, Y. K. Chen, A. Pomerene, D. Carothers, R. Kamocsai, C. Hill, and J. Beattie, “CMOS-compatible Si-ring-assisted Mach-Zehnder interferometer with internal bandwidth equalization,” IEEE J. Sel. Top. Quantum Electron. 16(1), 45–52 (2010).

Chen, Y.-K.

Chetrit, Y.

Chi, H.-K.

Cho, M. H.

Chu, T.

X. Xiao, H. Xu, X. Li, Z. Li, T. Chu, Y. Yu, and J. Yu, “High-speed, low-loss silicon Mach-Zehnder modulators with doping optimization,” Opt. Express 21(4), 4116–4125 (2013).
[Crossref] [PubMed]

X. Li, X. Xiao, H. Xu, Z. Li, T. Chu, J. Yu, and Y. Yu, “Highly efficient silicon Michelson interferometer modulators,” IEEE Photon. Technol. Lett. 25(5), 407–409 (2013).
[Crossref]

Ciftcioglu, B.

Cunningham, J. E.

Desiatov, B.

Ding, R.

Djordjevic, S. S.

Dong, P.

Dumon, P.

Ellis-Monaghan, J.

D. M. Gill, J. E. Proesel, C. Xiong, J. S. Orcutt, J. C. Rosenberg, M. Khater, T. Barwicz, S. Assefa, S. M. Shank, C. Reinholm, J. Ellis-Monaghan, E. Kiewra, S. Kamlapurkar, C. M. Breslin, W. M. J. Green, W. Haensch, and Y. A. Vlasov, “Demonstration of a high extinction ratio monolithic CMOS integrated nano-photonic transmitter and 16 Gb/s optical link,” IEEE J. Sel. Top. Quantum Electron. 21(4), 3400311 (2015).

Emerson, N.

Fang, Q.

Fedeli, J. M.

Fedeli, J.-M.

D. J. Thomson, F. Y. Gardes, S. Liu, H. Porte, L. Zimmermann, J.-M. Fedeli, Y. Hu, M. Nedeljkovic, X. Yang, P. Petropoulos, and G. Z. Mashanovich, “High performance Mach–Zehnder-based silicon optical modulators,” IEEE J. Sel. Top. Quantum Electron. 19(6), 3400510 (2013).
[Crossref]

Feng, D.

Fournier, M.

Gardes, F.

Gardes, F. Y.

D. J. Thomson, H. Porte, B. Goll, D. Knoll, S. Lischke, F. Y. Gardes, Y. Hu, G. T. Reed, H. Zimmermann, and L. Zimmermann, “Silicon carrier depletion modulator with 10 Gbit/s driver realized in high‐performance photonic BiCMOS,” Laser Photon. Rev. 8(1), 180–187 (2014).
[Crossref]

G. T. Reed, G. Z. Mashanovich, F. Y. Gardes, M. Nedeljkovic, Y. Hu, D. J. Thomson, K. Li, P. R. Wilson, S. W. Chen, and S. S. Hsu, “Recent breakthroughs in carrier depletion based silicon optical modulators,” Nanophotonics 3(4–5), 1–18 (2013).

M. Aamer, D. J. Thomson, A. M. Gutiérrez, A. Brimont, F. Y. Gardes, G. T. Reed, J. M. Fedeli, A. Hakansson, and P. Sanchis, “10Gbit/s error-free DPSK modulation using a push–pull dual-drive silicon modulator,” Opt. Commun. 304, 107–110 (2013).
[Crossref]

D. J. Thomson, F. Y. Gardes, S. Liu, H. Porte, L. Zimmermann, J.-M. Fedeli, Y. Hu, M. Nedeljkovic, X. Yang, P. Petropoulos, and G. Z. Mashanovich, “High performance Mach–Zehnder-based silicon optical modulators,” IEEE J. Sel. Top. Quantum Electron. 19(6), 3400510 (2013).
[Crossref]

D. J. Thomson, F. Y. Gardes, Y. Hu, G. Mashanovich, M. Fournier, P. Grosse, J. M. Fedeli, and G. T. Reed, “High contrast 40Gbit/s optical modulation in silicon,” Opt. Express 19(12), 11507–11516 (2011).
[Crossref] [PubMed]

D. J. Thomson, F. Y. Gardes, G. T. Reed, F. Milesi, and J. M. Fedeli, “High speed silicon optical modulator with self aligned fabrication process,” Opt. Express 18(18), 19064–19069 (2010).
[Crossref] [PubMed]

G. T. Reed, G. Z. Mashanovich, F. Y. Gardes, and D. J. Thomson, “Silicon optical modulators,” Nat. Photon. 4(8), 518–526 (2010).
[Crossref]

Gill, D. M.

D. M. Gill, J. E. Proesel, C. Xiong, J. S. Orcutt, J. C. Rosenberg, M. Khater, T. Barwicz, S. Assefa, S. M. Shank, C. Reinholm, J. Ellis-Monaghan, E. Kiewra, S. Kamlapurkar, C. M. Breslin, W. M. J. Green, W. Haensch, and Y. A. Vlasov, “Demonstration of a high extinction ratio monolithic CMOS integrated nano-photonic transmitter and 16 Gb/s optical link,” IEEE J. Sel. Top. Quantum Electron. 21(4), 3400311 (2015).

J. C. Rosenberg, W. M. J. Green, S. Assefa, D. M. Gill, T. Barwicz, M. Yang, S. M. Shank, and Y. A. Vlasov, “A 25 Gbps silicon microring modulator based on an interleaved junction,” Opt. Express 20(24), 26411–26423 (2012).
[Crossref] [PubMed]

D. M. Gill, S. S. Patel, M. Rasras, K. Y. Tu, A. E. White, Y. K. Chen, A. Pomerene, D. Carothers, R. Kamocsai, C. Hill, and J. Beattie, “CMOS-compatible Si-ring-assisted Mach-Zehnder interferometer with internal bandwidth equalization,” IEEE J. Sel. Top. Quantum Electron. 16(1), 45–52 (2010).

Gloeckner, S.

A. Narasimha, B. Analui, Y. Liang, T. J. Sleboda, S. Abdalla, E. Balmater, S. Gloeckner, D. Guckenberger, M. Harrison, R. G. M. P. Koumans, D. Kucharski, A. Mekis, S. Mirsaidi, D. Song, and T. Pinguet, “A fully integrated 4× 10-Gb/s DWDM optoelectronic transceiver implemented in a standard 0.13 μm CMOS SOI technology,” IEEE J. Solid-State Circuits 42(12), 2736–2744 (2007).
[Crossref]

Goll, B.

D. J. Thomson, H. Porte, B. Goll, D. Knoll, S. Lischke, F. Y. Gardes, Y. Hu, G. T. Reed, H. Zimmermann, and L. Zimmermann, “Silicon carrier depletion modulator with 10 Gbit/s driver realized in high‐performance photonic BiCMOS,” Laser Photon. Rev. 8(1), 180–187 (2014).
[Crossref]

Goykhman, I.

Green, W. M. J.

D. M. Gill, J. E. Proesel, C. Xiong, J. S. Orcutt, J. C. Rosenberg, M. Khater, T. Barwicz, S. Assefa, S. M. Shank, C. Reinholm, J. Ellis-Monaghan, E. Kiewra, S. Kamlapurkar, C. M. Breslin, W. M. J. Green, W. Haensch, and Y. A. Vlasov, “Demonstration of a high extinction ratio monolithic CMOS integrated nano-photonic transmitter and 16 Gb/s optical link,” IEEE J. Sel. Top. Quantum Electron. 21(4), 3400311 (2015).

J. C. Rosenberg, W. M. J. Green, S. Assefa, D. M. Gill, T. Barwicz, M. Yang, S. M. Shank, and Y. A. Vlasov, “A 25 Gbps silicon microring modulator based on an interleaved junction,” Opt. Express 20(24), 26411–26423 (2012).
[Crossref] [PubMed]

Grosse, P.

Guckenberger, D.

A. Narasimha, B. Analui, Y. Liang, T. J. Sleboda, S. Abdalla, E. Balmater, S. Gloeckner, D. Guckenberger, M. Harrison, R. G. M. P. Koumans, D. Kucharski, A. Mekis, S. Mirsaidi, D. Song, and T. Pinguet, “A fully integrated 4× 10-Gb/s DWDM optoelectronic transceiver implemented in a standard 0.13 μm CMOS SOI technology,” IEEE J. Solid-State Circuits 42(12), 2736–2744 (2007).
[Crossref]

Gutiérrez, A. M.

M. Aamer, D. J. Thomson, A. M. Gutiérrez, A. Brimont, F. Y. Gardes, G. T. Reed, J. M. Fedeli, A. Hakansson, and P. Sanchis, “10Gbit/s error-free DPSK modulation using a push–pull dual-drive silicon modulator,” Opt. Commun. 304, 107–110 (2013).
[Crossref]

Haensch, W.

D. M. Gill, J. E. Proesel, C. Xiong, J. S. Orcutt, J. C. Rosenberg, M. Khater, T. Barwicz, S. Assefa, S. M. Shank, C. Reinholm, J. Ellis-Monaghan, E. Kiewra, S. Kamlapurkar, C. M. Breslin, W. M. J. Green, W. Haensch, and Y. A. Vlasov, “Demonstration of a high extinction ratio monolithic CMOS integrated nano-photonic transmitter and 16 Gb/s optical link,” IEEE J. Sel. Top. Quantum Electron. 21(4), 3400311 (2015).

Hakansson, A.

M. Aamer, D. J. Thomson, A. M. Gutiérrez, A. Brimont, F. Y. Gardes, G. T. Reed, J. M. Fedeli, A. Hakansson, and P. Sanchis, “10Gbit/s error-free DPSK modulation using a push–pull dual-drive silicon modulator,” Opt. Commun. 304, 107–110 (2013).
[Crossref]

Harris, N. C.

Harrison, M.

A. Narasimha, B. Analui, Y. Liang, T. J. Sleboda, S. Abdalla, E. Balmater, S. Gloeckner, D. Guckenberger, M. Harrison, R. G. M. P. Koumans, D. Kucharski, A. Mekis, S. Mirsaidi, D. Song, and T. Pinguet, “A fully integrated 4× 10-Gb/s DWDM optoelectronic transceiver implemented in a standard 0.13 μm CMOS SOI technology,” IEEE J. Solid-State Circuits 42(12), 2736–2744 (2007).
[Crossref]

Hill, C.

D. M. Gill, S. S. Patel, M. Rasras, K. Y. Tu, A. E. White, Y. K. Chen, A. Pomerene, D. Carothers, R. Kamocsai, C. Hill, and J. Beattie, “CMOS-compatible Si-ring-assisted Mach-Zehnder interferometer with internal bandwidth equalization,” IEEE J. Sel. Top. Quantum Electron. 16(1), 45–52 (2010).

Hillerkuss, D.

Ho, R.

Hochberg, M.

Hsu, S. S.

G. T. Reed, G. Z. Mashanovich, F. Y. Gardes, M. Nedeljkovic, Y. Hu, D. J. Thomson, K. Li, P. R. Wilson, S. W. Chen, and S. S. Hsu, “Recent breakthroughs in carrier depletion based silicon optical modulators,” Nanophotonics 3(4–5), 1–18 (2013).

Hu, Y.

D. J. Thomson, H. Porte, B. Goll, D. Knoll, S. Lischke, F. Y. Gardes, Y. Hu, G. T. Reed, H. Zimmermann, and L. Zimmermann, “Silicon carrier depletion modulator with 10 Gbit/s driver realized in high‐performance photonic BiCMOS,” Laser Photon. Rev. 8(1), 180–187 (2014).
[Crossref]

G. T. Reed, G. Z. Mashanovich, F. Y. Gardes, M. Nedeljkovic, Y. Hu, D. J. Thomson, K. Li, P. R. Wilson, S. W. Chen, and S. S. Hsu, “Recent breakthroughs in carrier depletion based silicon optical modulators,” Nanophotonics 3(4–5), 1–18 (2013).

D. J. Thomson, F. Y. Gardes, S. Liu, H. Porte, L. Zimmermann, J.-M. Fedeli, Y. Hu, M. Nedeljkovic, X. Yang, P. Petropoulos, and G. Z. Mashanovich, “High performance Mach–Zehnder-based silicon optical modulators,” IEEE J. Sel. Top. Quantum Electron. 19(6), 3400510 (2013).
[Crossref]

D. J. Thomson, F. Y. Gardes, Y. Hu, G. Mashanovich, M. Fournier, P. Grosse, J. M. Fedeli, and G. T. Reed, “High contrast 40Gbit/s optical modulation in silicon,” Opt. Express 19(12), 11507–11516 (2011).
[Crossref] [PubMed]

Hwang, M.-S.

Izhaky, N.

Jang, K.-S.

Jeong, D.-K.

Joo, J.

Kamlapurkar, S.

D. M. Gill, J. E. Proesel, C. Xiong, J. S. Orcutt, J. C. Rosenberg, M. Khater, T. Barwicz, S. Assefa, S. M. Shank, C. Reinholm, J. Ellis-Monaghan, E. Kiewra, S. Kamlapurkar, C. M. Breslin, W. M. J. Green, W. Haensch, and Y. A. Vlasov, “Demonstration of a high extinction ratio monolithic CMOS integrated nano-photonic transmitter and 16 Gb/s optical link,” IEEE J. Sel. Top. Quantum Electron. 21(4), 3400311 (2015).

Kamocsai, R.

D. M. Gill, S. S. Patel, M. Rasras, K. Y. Tu, A. E. White, Y. K. Chen, A. Pomerene, D. Carothers, R. Kamocsai, C. Hill, and J. Beattie, “CMOS-compatible Si-ring-assisted Mach-Zehnder interferometer with internal bandwidth equalization,” IEEE J. Sel. Top. Quantum Electron. 16(1), 45–52 (2010).

Khater, M.

D. M. Gill, J. E. Proesel, C. Xiong, J. S. Orcutt, J. C. Rosenberg, M. Khater, T. Barwicz, S. Assefa, S. M. Shank, C. Reinholm, J. Ellis-Monaghan, E. Kiewra, S. Kamlapurkar, C. M. Breslin, W. M. J. Green, W. Haensch, and Y. A. Vlasov, “Demonstration of a high extinction ratio monolithic CMOS integrated nano-photonic transmitter and 16 Gb/s optical link,” IEEE J. Sel. Top. Quantum Electron. 21(4), 3400311 (2015).

Kiewra, E.

D. M. Gill, J. E. Proesel, C. Xiong, J. S. Orcutt, J. C. Rosenberg, M. Khater, T. Barwicz, S. Assefa, S. M. Shank, C. Reinholm, J. Ellis-Monaghan, E. Kiewra, S. Kamlapurkar, C. M. Breslin, W. M. J. Green, W. Haensch, and Y. A. Vlasov, “Demonstration of a high extinction ratio monolithic CMOS integrated nano-photonic transmitter and 16 Gb/s optical link,” IEEE J. Sel. Top. Quantum Electron. 21(4), 3400311 (2015).

Kim, D.-W.

Kim, G.

Kim, H.-C.

Kim, I. G.

Kim, J. H.

Kim, J.-K.

Kim, S.

Kim, S. A.

Knoll, D.

D. J. Thomson, H. Porte, B. Goll, D. Knoll, S. Lischke, F. Y. Gardes, Y. Hu, G. T. Reed, H. Zimmermann, and L. Zimmermann, “Silicon carrier depletion modulator with 10 Gbit/s driver realized in high‐performance photonic BiCMOS,” Laser Photon. Rev. 8(1), 180–187 (2014).
[Crossref]

Komorowska, K.

Korn, D.

Koumans, R. G. M. P.

A. Narasimha, B. Analui, Y. Liang, T. J. Sleboda, S. Abdalla, E. Balmater, S. Gloeckner, D. Guckenberger, M. Harrison, R. G. M. P. Koumans, D. Kucharski, A. Mekis, S. Mirsaidi, D. Song, and T. Pinguet, “A fully integrated 4× 10-Gb/s DWDM optoelectronic transceiver implemented in a standard 0.13 μm CMOS SOI technology,” IEEE J. Solid-State Circuits 42(12), 2736–2744 (2007).
[Crossref]

Krishnamoorthy, A. V.

Kucharski, D.

A. Narasimha, B. Analui, Y. Liang, T. J. Sleboda, S. Abdalla, E. Balmater, S. Gloeckner, D. Guckenberger, M. Harrison, R. G. M. P. Koumans, D. Kucharski, A. Mekis, S. Mirsaidi, D. Song, and T. Pinguet, “A fully integrated 4× 10-Gb/s DWDM optoelectronic transceiver implemented in a standard 0.13 μm CMOS SOI technology,” IEEE J. Solid-State Circuits 42(12), 2736–2744 (2007).
[Crossref]

Lee, J. H.

Lee, J. M.

Lee, J. Y.

Lee, P.

Lentine, A. L.

M. R. Watts, W. A. Zortman, D. C. Trotter, R. W. Young, and A. L. Lentine, “Low-voltage, compact, depletion-mode, silicon Mach-Zehnder modulator,” IEEE J. Sel. Top. Quantum Electron. 16(1), 159–164 (2010).
[Crossref]

Leuthold, J.

Levy, U.

Lexau, J.

Li, K.

G. T. Reed, G. Z. Mashanovich, F. Y. Gardes, M. Nedeljkovic, Y. Hu, D. J. Thomson, K. Li, P. R. Wilson, S. W. Chen, and S. S. Hsu, “Recent breakthroughs in carrier depletion based silicon optical modulators,” Nanophotonics 3(4–5), 1–18 (2013).

Li, X.

X. Li, X. Xiao, H. Xu, Z. Li, T. Chu, J. Yu, and Y. Yu, “Highly efficient silicon Michelson interferometer modulators,” IEEE Photon. Technol. Lett. 25(5), 407–409 (2013).
[Crossref]

X. Xiao, H. Xu, X. Li, Z. Li, T. Chu, Y. Yu, and J. Yu, “High-speed, low-loss silicon Mach-Zehnder modulators with doping optimization,” Opt. Express 21(4), 4116–4125 (2013).
[Crossref] [PubMed]

Li, Y.

Li, Z.

X. Xiao, H. Xu, X. Li, Z. Li, T. Chu, Y. Yu, and J. Yu, “High-speed, low-loss silicon Mach-Zehnder modulators with doping optimization,” Opt. Express 21(4), 4116–4125 (2013).
[Crossref] [PubMed]

X. Li, X. Xiao, H. Xu, Z. Li, T. Chu, J. Yu, and Y. Yu, “Highly efficient silicon Michelson interferometer modulators,” IEEE Photon. Technol. Lett. 25(5), 407–409 (2013).
[Crossref]

Liang, H.

Liang, Y.

A. Narasimha, B. Analui, Y. Liang, T. J. Sleboda, S. Abdalla, E. Balmater, S. Gloeckner, D. Guckenberger, M. Harrison, R. G. M. P. Koumans, D. Kucharski, A. Mekis, S. Mirsaidi, D. Song, and T. Pinguet, “A fully integrated 4× 10-Gb/s DWDM optoelectronic transceiver implemented in a standard 0.13 μm CMOS SOI technology,” IEEE J. Solid-State Circuits 42(12), 2736–2744 (2007).
[Crossref]

Liao, L.

Lim, A. E.

Lin, S.

Liow, T. Y.

Lischke, S.

D. J. Thomson, H. Porte, B. Goll, D. Knoll, S. Lischke, F. Y. Gardes, Y. Hu, G. T. Reed, H. Zimmermann, and L. Zimmermann, “Silicon carrier depletion modulator with 10 Gbit/s driver realized in high‐performance photonic BiCMOS,” Laser Photon. Rev. 8(1), 180–187 (2014).
[Crossref]

Liu, A.

Liu, F.

Liu, S.

D. J. Thomson, F. Y. Gardes, S. Liu, H. Porte, L. Zimmermann, J.-M. Fedeli, Y. Hu, M. Nedeljkovic, X. Yang, P. Petropoulos, and G. Z. Mashanovich, “High performance Mach–Zehnder-based silicon optical modulators,” IEEE J. Sel. Top. Quantum Electron. 19(6), 3400510 (2013).
[Crossref]

Liu, Y.

Lo, G. Q.

Lo, P. G.

Luo, X.

Luo, Y.

Ma, Y.

Mashanovich, G.

Mashanovich, G. Z.

D. J. Thomson, F. Y. Gardes, S. Liu, H. Porte, L. Zimmermann, J.-M. Fedeli, Y. Hu, M. Nedeljkovic, X. Yang, P. Petropoulos, and G. Z. Mashanovich, “High performance Mach–Zehnder-based silicon optical modulators,” IEEE J. Sel. Top. Quantum Electron. 19(6), 3400510 (2013).
[Crossref]

G. T. Reed, G. Z. Mashanovich, F. Y. Gardes, M. Nedeljkovic, Y. Hu, D. J. Thomson, K. Li, P. R. Wilson, S. W. Chen, and S. S. Hsu, “Recent breakthroughs in carrier depletion based silicon optical modulators,” Nanophotonics 3(4–5), 1–18 (2013).

G. T. Reed, G. Z. Mashanovich, F. Y. Gardes, and D. J. Thomson, “Silicon optical modulators,” Nat. Photon. 4(8), 518–526 (2010).
[Crossref]

Mekis, A.

A. Narasimha, B. Analui, Y. Liang, T. J. Sleboda, S. Abdalla, E. Balmater, S. Gloeckner, D. Guckenberger, M. Harrison, R. G. M. P. Koumans, D. Kucharski, A. Mekis, S. Mirsaidi, D. Song, and T. Pinguet, “A fully integrated 4× 10-Gb/s DWDM optoelectronic transceiver implemented in a standard 0.13 μm CMOS SOI technology,” IEEE J. Solid-State Circuits 42(12), 2736–2744 (2007).
[Crossref]

Milesi, F.

Mirsaidi, S.

A. Narasimha, B. Analui, Y. Liang, T. J. Sleboda, S. Abdalla, E. Balmater, S. Gloeckner, D. Guckenberger, M. Harrison, R. G. M. P. Koumans, D. Kucharski, A. Mekis, S. Mirsaidi, D. Song, and T. Pinguet, “A fully integrated 4× 10-Gb/s DWDM optoelectronic transceiver implemented in a standard 0.13 μm CMOS SOI technology,” IEEE J. Solid-State Circuits 42(12), 2736–2744 (2007).
[Crossref]

Narasimha, A.

A. Narasimha, B. Analui, Y. Liang, T. J. Sleboda, S. Abdalla, E. Balmater, S. Gloeckner, D. Guckenberger, M. Harrison, R. G. M. P. Koumans, D. Kucharski, A. Mekis, S. Mirsaidi, D. Song, and T. Pinguet, “A fully integrated 4× 10-Gb/s DWDM optoelectronic transceiver implemented in a standard 0.13 μm CMOS SOI technology,” IEEE J. Solid-State Circuits 42(12), 2736–2744 (2007).
[Crossref]

Nedeljkovic, M.

G. T. Reed, G. Z. Mashanovich, F. Y. Gardes, M. Nedeljkovic, Y. Hu, D. J. Thomson, K. Li, P. R. Wilson, S. W. Chen, and S. S. Hsu, “Recent breakthroughs in carrier depletion based silicon optical modulators,” Nanophotonics 3(4–5), 1–18 (2013).

D. J. Thomson, F. Y. Gardes, S. Liu, H. Porte, L. Zimmermann, J.-M. Fedeli, Y. Hu, M. Nedeljkovic, X. Yang, P. Petropoulos, and G. Z. Mashanovich, “High performance Mach–Zehnder-based silicon optical modulators,” IEEE J. Sel. Top. Quantum Electron. 19(6), 3400510 (2013).
[Crossref]

Nguyen, H.

Novack, A.

Oh, J. H.

Orcutt, J. S.

D. M. Gill, J. E. Proesel, C. Xiong, J. S. Orcutt, J. C. Rosenberg, M. Khater, T. Barwicz, S. Assefa, S. M. Shank, C. Reinholm, J. Ellis-Monaghan, E. Kiewra, S. Kamlapurkar, C. M. Breslin, W. M. J. Green, W. Haensch, and Y. A. Vlasov, “Demonstration of a high extinction ratio monolithic CMOS integrated nano-photonic transmitter and 16 Gb/s optical link,” IEEE J. Sel. Top. Quantum Electron. 21(4), 3400311 (2015).

Paniccia, M.

Pantouvaki, M.

Park, G. S.

Park, J. M.

Park, J. W.

Park, K.-S.

Patel, S. S.

D. M. Gill, S. S. Patel, M. Rasras, K. Y. Tu, A. E. White, Y. K. Chen, A. Pomerene, D. Carothers, R. Kamocsai, C. Hill, and J. Beattie, “CMOS-compatible Si-ring-assisted Mach-Zehnder interferometer with internal bandwidth equalization,” IEEE J. Sel. Top. Quantum Electron. 16(1), 45–52 (2010).

Petropoulos, P.

D. J. Thomson, F. Y. Gardes, S. Liu, H. Porte, L. Zimmermann, J.-M. Fedeli, Y. Hu, M. Nedeljkovic, X. Yang, P. Petropoulos, and G. Z. Mashanovich, “High performance Mach–Zehnder-based silicon optical modulators,” IEEE J. Sel. Top. Quantum Electron. 19(6), 3400510 (2013).
[Crossref]

Pinguet, T.

T. Baehr-Jones, R. Ding, Y. Liu, A. Ayazi, T. Pinguet, N. C. Harris, M. Streshinsky, P. Lee, Y. Zhang, A. E. Lim, T. Y. Liow, S. H. Teo, G. Q. Lo, and M. Hochberg, “Ultralow drive voltage silicon traveling-wave modulator,” Opt. Express 20(11), 12014–12020 (2012).
[Crossref] [PubMed]

A. Narasimha, B. Analui, Y. Liang, T. J. Sleboda, S. Abdalla, E. Balmater, S. Gloeckner, D. Guckenberger, M. Harrison, R. G. M. P. Koumans, D. Kucharski, A. Mekis, S. Mirsaidi, D. Song, and T. Pinguet, “A fully integrated 4× 10-Gb/s DWDM optoelectronic transceiver implemented in a standard 0.13 μm CMOS SOI technology,” IEEE J. Solid-State Circuits 42(12), 2736–2744 (2007).
[Crossref]

Png, C.

Pomerene, A.

D. M. Gill, S. S. Patel, M. Rasras, K. Y. Tu, A. E. White, Y. K. Chen, A. Pomerene, D. Carothers, R. Kamocsai, C. Hill, and J. Beattie, “CMOS-compatible Si-ring-assisted Mach-Zehnder interferometer with internal bandwidth equalization,” IEEE J. Sel. Top. Quantum Electron. 16(1), 45–52 (2010).

Porte, H.

D. J. Thomson, H. Porte, B. Goll, D. Knoll, S. Lischke, F. Y. Gardes, Y. Hu, G. T. Reed, H. Zimmermann, and L. Zimmermann, “Silicon carrier depletion modulator with 10 Gbit/s driver realized in high‐performance photonic BiCMOS,” Laser Photon. Rev. 8(1), 180–187 (2014).
[Crossref]

D. J. Thomson, F. Y. Gardes, S. Liu, H. Porte, L. Zimmermann, J.-M. Fedeli, Y. Hu, M. Nedeljkovic, X. Yang, P. Petropoulos, and G. Z. Mashanovich, “High performance Mach–Zehnder-based silicon optical modulators,” IEEE J. Sel. Top. Quantum Electron. 19(6), 3400510 (2013).
[Crossref]

Proesel, J. E.

D. M. Gill, J. E. Proesel, C. Xiong, J. S. Orcutt, J. C. Rosenberg, M. Khater, T. Barwicz, S. Assefa, S. M. Shank, C. Reinholm, J. Ellis-Monaghan, E. Kiewra, S. Kamlapurkar, C. M. Breslin, W. M. J. Green, W. Haensch, and Y. A. Vlasov, “Demonstration of a high extinction ratio monolithic CMOS integrated nano-photonic transmitter and 16 Gb/s optical link,” IEEE J. Sel. Top. Quantum Electron. 21(4), 3400311 (2015).

Raj, K.

Rasras, M.

D. M. Gill, S. S. Patel, M. Rasras, K. Y. Tu, A. E. White, Y. K. Chen, A. Pomerene, D. Carothers, R. Kamocsai, C. Hill, and J. Beattie, “CMOS-compatible Si-ring-assisted Mach-Zehnder interferometer with internal bandwidth equalization,” IEEE J. Sel. Top. Quantum Electron. 16(1), 45–52 (2010).

Reed, G.

Reed, G. T.

D. J. Thomson, H. Porte, B. Goll, D. Knoll, S. Lischke, F. Y. Gardes, Y. Hu, G. T. Reed, H. Zimmermann, and L. Zimmermann, “Silicon carrier depletion modulator with 10 Gbit/s driver realized in high‐performance photonic BiCMOS,” Laser Photon. Rev. 8(1), 180–187 (2014).
[Crossref]

G. T. Reed, G. Z. Mashanovich, F. Y. Gardes, M. Nedeljkovic, Y. Hu, D. J. Thomson, K. Li, P. R. Wilson, S. W. Chen, and S. S. Hsu, “Recent breakthroughs in carrier depletion based silicon optical modulators,” Nanophotonics 3(4–5), 1–18 (2013).

M. Aamer, D. J. Thomson, A. M. Gutiérrez, A. Brimont, F. Y. Gardes, G. T. Reed, J. M. Fedeli, A. Hakansson, and P. Sanchis, “10Gbit/s error-free DPSK modulation using a push–pull dual-drive silicon modulator,” Opt. Commun. 304, 107–110 (2013).
[Crossref]

D. J. Thomson, F. Y. Gardes, Y. Hu, G. Mashanovich, M. Fournier, P. Grosse, J. M. Fedeli, and G. T. Reed, “High contrast 40Gbit/s optical modulation in silicon,” Opt. Express 19(12), 11507–11516 (2011).
[Crossref] [PubMed]

D. J. Thomson, F. Y. Gardes, G. T. Reed, F. Milesi, and J. M. Fedeli, “High speed silicon optical modulator with self aligned fabrication process,” Opt. Express 18(18), 19064–19069 (2010).
[Crossref] [PubMed]

G. T. Reed, G. Z. Mashanovich, F. Y. Gardes, and D. J. Thomson, “Silicon optical modulators,” Nat. Photon. 4(8), 518–526 (2010).
[Crossref]

Reinholm, C.

D. M. Gill, J. E. Proesel, C. Xiong, J. S. Orcutt, J. C. Rosenberg, M. Khater, T. Barwicz, S. Assefa, S. M. Shank, C. Reinholm, J. Ellis-Monaghan, E. Kiewra, S. Kamlapurkar, C. M. Breslin, W. M. J. Green, W. Haensch, and Y. A. Vlasov, “Demonstration of a high extinction ratio monolithic CMOS integrated nano-photonic transmitter and 16 Gb/s optical link,” IEEE J. Sel. Top. Quantum Electron. 21(4), 3400311 (2015).

Rosenberg, J. C.

D. M. Gill, J. E. Proesel, C. Xiong, J. S. Orcutt, J. C. Rosenberg, M. Khater, T. Barwicz, S. Assefa, S. M. Shank, C. Reinholm, J. Ellis-Monaghan, E. Kiewra, S. Kamlapurkar, C. M. Breslin, W. M. J. Green, W. Haensch, and Y. A. Vlasov, “Demonstration of a high extinction ratio monolithic CMOS integrated nano-photonic transmitter and 16 Gb/s optical link,” IEEE J. Sel. Top. Quantum Electron. 21(4), 3400311 (2015).

J. C. Rosenberg, W. M. J. Green, S. Assefa, D. M. Gill, T. Barwicz, M. Yang, S. M. Shank, and Y. A. Vlasov, “A 25 Gbps silicon microring modulator based on an interleaved junction,” Opt. Express 20(24), 26411–26423 (2012).
[Crossref] [PubMed]

Rubin, D.

Sanchis, P.

M. Aamer, D. J. Thomson, A. M. Gutiérrez, A. Brimont, F. Y. Gardes, G. T. Reed, J. M. Fedeli, A. Hakansson, and P. Sanchis, “10Gbit/s error-free DPSK modulation using a push–pull dual-drive silicon modulator,” Opt. Commun. 304, 107–110 (2013).
[Crossref]

Shafiiha, R.

Shank, S. M.

D. M. Gill, J. E. Proesel, C. Xiong, J. S. Orcutt, J. C. Rosenberg, M. Khater, T. Barwicz, S. Assefa, S. M. Shank, C. Reinholm, J. Ellis-Monaghan, E. Kiewra, S. Kamlapurkar, C. M. Breslin, W. M. J. Green, W. Haensch, and Y. A. Vlasov, “Demonstration of a high extinction ratio monolithic CMOS integrated nano-photonic transmitter and 16 Gb/s optical link,” IEEE J. Sel. Top. Quantum Electron. 21(4), 3400311 (2015).

J. C. Rosenberg, W. M. J. Green, S. Assefa, D. M. Gill, T. Barwicz, M. Yang, S. M. Shank, and Y. A. Vlasov, “A 25 Gbps silicon microring modulator based on an interleaved junction,” Opt. Express 20(24), 26411–26423 (2012).
[Crossref] [PubMed]

Shappir, J.

Shubin, I.

Sleboda, T. J.

A. Narasimha, B. Analui, Y. Liang, T. J. Sleboda, S. Abdalla, E. Balmater, S. Gloeckner, D. Guckenberger, M. Harrison, R. G. M. P. Koumans, D. Kucharski, A. Mekis, S. Mirsaidi, D. Song, and T. Pinguet, “A fully integrated 4× 10-Gb/s DWDM optoelectronic transceiver implemented in a standard 0.13 μm CMOS SOI technology,” IEEE J. Solid-State Circuits 42(12), 2736–2744 (2007).
[Crossref]

Song, D.

A. Narasimha, B. Analui, Y. Liang, T. J. Sleboda, S. Abdalla, E. Balmater, S. Gloeckner, D. Guckenberger, M. Harrison, R. G. M. P. Koumans, D. Kucharski, A. Mekis, S. Mirsaidi, D. Song, and T. Pinguet, “A fully integrated 4× 10-Gb/s DWDM optoelectronic transceiver implemented in a standard 0.13 μm CMOS SOI technology,” IEEE J. Solid-State Circuits 42(12), 2736–2744 (2007).
[Crossref]

Song, J.

Streshinsky, M.

Teo, S. H.

Thacker, H. D.

Thomson, D. J.

D. J. Thomson, H. Porte, B. Goll, D. Knoll, S. Lischke, F. Y. Gardes, Y. Hu, G. T. Reed, H. Zimmermann, and L. Zimmermann, “Silicon carrier depletion modulator with 10 Gbit/s driver realized in high‐performance photonic BiCMOS,” Laser Photon. Rev. 8(1), 180–187 (2014).
[Crossref]

G. T. Reed, G. Z. Mashanovich, F. Y. Gardes, M. Nedeljkovic, Y. Hu, D. J. Thomson, K. Li, P. R. Wilson, S. W. Chen, and S. S. Hsu, “Recent breakthroughs in carrier depletion based silicon optical modulators,” Nanophotonics 3(4–5), 1–18 (2013).

M. Aamer, D. J. Thomson, A. M. Gutiérrez, A. Brimont, F. Y. Gardes, G. T. Reed, J. M. Fedeli, A. Hakansson, and P. Sanchis, “10Gbit/s error-free DPSK modulation using a push–pull dual-drive silicon modulator,” Opt. Commun. 304, 107–110 (2013).
[Crossref]

D. J. Thomson, F. Y. Gardes, S. Liu, H. Porte, L. Zimmermann, J.-M. Fedeli, Y. Hu, M. Nedeljkovic, X. Yang, P. Petropoulos, and G. Z. Mashanovich, “High performance Mach–Zehnder-based silicon optical modulators,” IEEE J. Sel. Top. Quantum Electron. 19(6), 3400510 (2013).
[Crossref]

D. J. Thomson, F. Y. Gardes, Y. Hu, G. Mashanovich, M. Fournier, P. Grosse, J. M. Fedeli, and G. T. Reed, “High contrast 40Gbit/s optical modulation in silicon,” Opt. Express 19(12), 11507–11516 (2011).
[Crossref] [PubMed]

D. J. Thomson, F. Y. Gardes, G. T. Reed, F. Milesi, and J. M. Fedeli, “High speed silicon optical modulator with self aligned fabrication process,” Opt. Express 18(18), 19064–19069 (2010).
[Crossref] [PubMed]

G. T. Reed, G. Z. Mashanovich, F. Y. Gardes, and D. J. Thomson, “Silicon optical modulators,” Nat. Photon. 4(8), 518–526 (2010).
[Crossref]

Trotter, D. C.

M. R. Watts, W. A. Zortman, D. C. Trotter, R. W. Young, and A. L. Lentine, “Low-voltage, compact, depletion-mode, silicon Mach-Zehnder modulator,” IEEE J. Sel. Top. Quantum Electron. 16(1), 159–164 (2010).
[Crossref]

Tu, K. Y.

D. M. Gill, S. S. Patel, M. Rasras, K. Y. Tu, A. E. White, Y. K. Chen, A. Pomerene, D. Carothers, R. Kamocsai, C. Hill, and J. Beattie, “CMOS-compatible Si-ring-assisted Mach-Zehnder interferometer with internal bandwidth equalization,” IEEE J. Sel. Top. Quantum Electron. 16(1), 45–52 (2010).

Tu, X.

Van Campenhout, J.

Verheyen, P.

Vlasov, Y. A.

D. M. Gill, J. E. Proesel, C. Xiong, J. S. Orcutt, J. C. Rosenberg, M. Khater, T. Barwicz, S. Assefa, S. M. Shank, C. Reinholm, J. Ellis-Monaghan, E. Kiewra, S. Kamlapurkar, C. M. Breslin, W. M. J. Green, W. Haensch, and Y. A. Vlasov, “Demonstration of a high extinction ratio monolithic CMOS integrated nano-photonic transmitter and 16 Gb/s optical link,” IEEE J. Sel. Top. Quantum Electron. 21(4), 3400311 (2015).

Y. A. Vlasov, “Silicon CMOS-integrated nano-photonics for computer and data communications beyond 100G,” IEEE Commun. Mag. 50(2), 67–72 (2012).
[Crossref]

J. C. Rosenberg, W. M. J. Green, S. Assefa, D. M. Gill, T. Barwicz, M. Yang, S. M. Shank, and Y. A. Vlasov, “A 25 Gbps silicon microring modulator based on an interleaved junction,” Opt. Express 20(24), 26411–26423 (2012).
[Crossref] [PubMed]

Watts, M. R.

M. R. Watts, W. A. Zortman, D. C. Trotter, R. W. Young, and A. L. Lentine, “Low-voltage, compact, depletion-mode, silicon Mach-Zehnder modulator,” IEEE J. Sel. Top. Quantum Electron. 16(1), 159–164 (2010).
[Crossref]

White, A. E.

D. M. Gill, S. S. Patel, M. Rasras, K. Y. Tu, A. E. White, Y. K. Chen, A. Pomerene, D. Carothers, R. Kamocsai, C. Hill, and J. Beattie, “CMOS-compatible Si-ring-assisted Mach-Zehnder interferometer with internal bandwidth equalization,” IEEE J. Sel. Top. Quantum Electron. 16(1), 45–52 (2010).

Wilson, P. R.

G. T. Reed, G. Z. Mashanovich, F. Y. Gardes, M. Nedeljkovic, Y. Hu, D. J. Thomson, K. Li, P. R. Wilson, S. W. Chen, and S. S. Hsu, “Recent breakthroughs in carrier depletion based silicon optical modulators,” Nanophotonics 3(4–5), 1–18 (2013).

Xiao, X.

X. Li, X. Xiao, H. Xu, Z. Li, T. Chu, J. Yu, and Y. Yu, “Highly efficient silicon Michelson interferometer modulators,” IEEE Photon. Technol. Lett. 25(5), 407–409 (2013).
[Crossref]

X. Xiao, H. Xu, X. Li, Z. Li, T. Chu, Y. Yu, and J. Yu, “High-speed, low-loss silicon Mach-Zehnder modulators with doping optimization,” Opt. Express 21(4), 4116–4125 (2013).
[Crossref] [PubMed]

Xie, C.

Xiong, C.

D. M. Gill, J. E. Proesel, C. Xiong, J. S. Orcutt, J. C. Rosenberg, M. Khater, T. Barwicz, S. Assefa, S. M. Shank, C. Reinholm, J. Ellis-Monaghan, E. Kiewra, S. Kamlapurkar, C. M. Breslin, W. M. J. Green, W. Haensch, and Y. A. Vlasov, “Demonstration of a high extinction ratio monolithic CMOS integrated nano-photonic transmitter and 16 Gb/s optical link,” IEEE J. Sel. Top. Quantum Electron. 21(4), 3400311 (2015).

Xu, H.

X. Li, X. Xiao, H. Xu, Z. Li, T. Chu, J. Yu, and Y. Yu, “Highly efficient silicon Michelson interferometer modulators,” IEEE Photon. Technol. Lett. 25(5), 407–409 (2013).
[Crossref]

X. Xiao, H. Xu, X. Li, Z. Li, T. Chu, Y. Yu, and J. Yu, “High-speed, low-loss silicon Mach-Zehnder modulators with doping optimization,” Opt. Express 21(4), 4116–4125 (2013).
[Crossref] [PubMed]

Yang, M.

Yang, X.

D. J. Thomson, F. Y. Gardes, S. Liu, H. Porte, L. Zimmermann, J.-M. Fedeli, Y. Hu, M. Nedeljkovic, X. Yang, P. Petropoulos, and G. Z. Mashanovich, “High performance Mach–Zehnder-based silicon optical modulators,” IEEE J. Sel. Top. Quantum Electron. 19(6), 3400510 (2013).
[Crossref]

Yang, Y.

Young, R. W.

M. R. Watts, W. A. Zortman, D. C. Trotter, R. W. Young, and A. L. Lentine, “Low-voltage, compact, depletion-mode, silicon Mach-Zehnder modulator,” IEEE J. Sel. Top. Quantum Electron. 16(1), 159–164 (2010).
[Crossref]

Yu, H.

Yu, J.

X. Xiao, H. Xu, X. Li, Z. Li, T. Chu, Y. Yu, and J. Yu, “High-speed, low-loss silicon Mach-Zehnder modulators with doping optimization,” Opt. Express 21(4), 4116–4125 (2013).
[Crossref] [PubMed]

X. Li, X. Xiao, H. Xu, Z. Li, T. Chu, J. Yu, and Y. Yu, “Highly efficient silicon Michelson interferometer modulators,” IEEE Photon. Technol. Lett. 25(5), 407–409 (2013).
[Crossref]

Yu, M.

Yu, Y.

X. Xiao, H. Xu, X. Li, Z. Li, T. Chu, Y. Yu, and J. Yu, “High-speed, low-loss silicon Mach-Zehnder modulators with doping optimization,” Opt. Express 21(4), 4116–4125 (2013).
[Crossref] [PubMed]

X. Li, X. Xiao, H. Xu, Z. Li, T. Chu, J. Yu, and Y. Yu, “Highly efficient silicon Michelson interferometer modulators,” IEEE Photon. Technol. Lett. 25(5), 407–409 (2013).
[Crossref]

Zhang, Y.

Zheng, X.

Zimmermann, H.

D. J. Thomson, H. Porte, B. Goll, D. Knoll, S. Lischke, F. Y. Gardes, Y. Hu, G. T. Reed, H. Zimmermann, and L. Zimmermann, “Silicon carrier depletion modulator with 10 Gbit/s driver realized in high‐performance photonic BiCMOS,” Laser Photon. Rev. 8(1), 180–187 (2014).
[Crossref]

Zimmermann, L.

D. J. Thomson, H. Porte, B. Goll, D. Knoll, S. Lischke, F. Y. Gardes, Y. Hu, G. T. Reed, H. Zimmermann, and L. Zimmermann, “Silicon carrier depletion modulator with 10 Gbit/s driver realized in high‐performance photonic BiCMOS,” Laser Photon. Rev. 8(1), 180–187 (2014).
[Crossref]

D. J. Thomson, F. Y. Gardes, S. Liu, H. Porte, L. Zimmermann, J.-M. Fedeli, Y. Hu, M. Nedeljkovic, X. Yang, P. Petropoulos, and G. Z. Mashanovich, “High performance Mach–Zehnder-based silicon optical modulators,” IEEE J. Sel. Top. Quantum Electron. 19(6), 3400510 (2013).
[Crossref]

Zortman, W. A.

M. R. Watts, W. A. Zortman, D. C. Trotter, R. W. Young, and A. L. Lentine, “Low-voltage, compact, depletion-mode, silicon Mach-Zehnder modulator,” IEEE J. Sel. Top. Quantum Electron. 16(1), 159–164 (2010).
[Crossref]

IEEE Commun. Mag. (1)

Y. A. Vlasov, “Silicon CMOS-integrated nano-photonics for computer and data communications beyond 100G,” IEEE Commun. Mag. 50(2), 67–72 (2012).
[Crossref]

IEEE J. Sel. Top. Quantum Electron. (4)

D. M. Gill, J. E. Proesel, C. Xiong, J. S. Orcutt, J. C. Rosenberg, M. Khater, T. Barwicz, S. Assefa, S. M. Shank, C. Reinholm, J. Ellis-Monaghan, E. Kiewra, S. Kamlapurkar, C. M. Breslin, W. M. J. Green, W. Haensch, and Y. A. Vlasov, “Demonstration of a high extinction ratio monolithic CMOS integrated nano-photonic transmitter and 16 Gb/s optical link,” IEEE J. Sel. Top. Quantum Electron. 21(4), 3400311 (2015).

D. M. Gill, S. S. Patel, M. Rasras, K. Y. Tu, A. E. White, Y. K. Chen, A. Pomerene, D. Carothers, R. Kamocsai, C. Hill, and J. Beattie, “CMOS-compatible Si-ring-assisted Mach-Zehnder interferometer with internal bandwidth equalization,” IEEE J. Sel. Top. Quantum Electron. 16(1), 45–52 (2010).

M. R. Watts, W. A. Zortman, D. C. Trotter, R. W. Young, and A. L. Lentine, “Low-voltage, compact, depletion-mode, silicon Mach-Zehnder modulator,” IEEE J. Sel. Top. Quantum Electron. 16(1), 159–164 (2010).
[Crossref]

D. J. Thomson, F. Y. Gardes, S. Liu, H. Porte, L. Zimmermann, J.-M. Fedeli, Y. Hu, M. Nedeljkovic, X. Yang, P. Petropoulos, and G. Z. Mashanovich, “High performance Mach–Zehnder-based silicon optical modulators,” IEEE J. Sel. Top. Quantum Electron. 19(6), 3400510 (2013).
[Crossref]

IEEE J. Solid-State Circuits (1)

A. Narasimha, B. Analui, Y. Liang, T. J. Sleboda, S. Abdalla, E. Balmater, S. Gloeckner, D. Guckenberger, M. Harrison, R. G. M. P. Koumans, D. Kucharski, A. Mekis, S. Mirsaidi, D. Song, and T. Pinguet, “A fully integrated 4× 10-Gb/s DWDM optoelectronic transceiver implemented in a standard 0.13 μm CMOS SOI technology,” IEEE J. Solid-State Circuits 42(12), 2736–2744 (2007).
[Crossref]

IEEE Photon. Technol. Lett. (1)

X. Li, X. Xiao, H. Xu, Z. Li, T. Chu, J. Yu, and Y. Yu, “Highly efficient silicon Michelson interferometer modulators,” IEEE Photon. Technol. Lett. 25(5), 407–409 (2013).
[Crossref]

J. Lightwave Technol. (1)

Laser Photon. Rev. (1)

D. J. Thomson, H. Porte, B. Goll, D. Knoll, S. Lischke, F. Y. Gardes, Y. Hu, G. T. Reed, H. Zimmermann, and L. Zimmermann, “Silicon carrier depletion modulator with 10 Gbit/s driver realized in high‐performance photonic BiCMOS,” Laser Photon. Rev. 8(1), 180–187 (2014).
[Crossref]

Nanophotonics (1)

G. T. Reed, G. Z. Mashanovich, F. Y. Gardes, M. Nedeljkovic, Y. Hu, D. J. Thomson, K. Li, P. R. Wilson, S. W. Chen, and S. S. Hsu, “Recent breakthroughs in carrier depletion based silicon optical modulators,” Nanophotonics 3(4–5), 1–18 (2013).

Nat. Photon. (1)

G. T. Reed, G. Z. Mashanovich, F. Y. Gardes, and D. J. Thomson, “Silicon optical modulators,” Nat. Photon. 4(8), 518–526 (2010).
[Crossref]

Opt. Commun. (1)

M. Aamer, D. J. Thomson, A. M. Gutiérrez, A. Brimont, F. Y. Gardes, G. T. Reed, J. M. Fedeli, A. Hakansson, and P. Sanchis, “10Gbit/s error-free DPSK modulation using a push–pull dual-drive silicon modulator,” Opt. Commun. 304, 107–110 (2013).
[Crossref]

Opt. Express (15)

P. Dong, C. Xie, L. Chen, L. L. Buhl, and Y. K. Chen, “112-Gb/s monolithic PDM-QPSK modulator in silicon,” Opt. Express 20(26), B624–B629 (2012).
[Crossref] [PubMed]

M. Streshinsky, R. Ding, Y. Liu, A. Novack, Y. Yang, Y. Ma, X. Tu, E. K. Chee, A. E. Lim, P. G. Lo, T. Baehr-Jones, and M. Hochberg, “Low power 50 Gb/s silicon traveling wave Mach-Zehnder modulator near 1300 nm,” Opt. Express 21(25), 30350–30357 (2013).
[Crossref] [PubMed]

P. Dong, L. Chen, and Y.-K. Chen, “High-speed low-voltage single-drive push-pull silicon Mach-Zehnder modulators,” Opt. Express 20(6), 6163–6169 (2012).
[PubMed]

H. Yu, M. Pantouvaki, J. Van Campenhout, D. Korn, K. Komorowska, P. Dumon, Y. Li, P. Verheyen, P. Absil, L. Alloatti, D. Hillerkuss, J. Leuthold, R. Baets, and W. Bogaerts, “Performance tradeoff between lateral and interdigitated doping patterns for high speed carrier-depletion based silicon modulators,” Opt. Express 20(12), 12926–12938 (2012).
[Crossref] [PubMed]

X. Xiao, H. Xu, X. Li, Z. Li, T. Chu, Y. Yu, and J. Yu, “High-speed, low-loss silicon Mach-Zehnder modulators with doping optimization,” Opt. Express 21(4), 4116–4125 (2013).
[Crossref] [PubMed]

X. Tu, T. Y. Liow, J. Song, X. Luo, Q. Fang, M. Yu, and G. Q. Lo, “50-Gb/s silicon optical modulator with traveling-wave electrodes,” Opt. Express 21(10), 12776–12782 (2013).
[Crossref] [PubMed]

D. J. Thomson, F. Y. Gardes, G. T. Reed, F. Milesi, and J. M. Fedeli, “High speed silicon optical modulator with self aligned fabrication process,” Opt. Express 18(18), 19064–19069 (2010).
[Crossref] [PubMed]

D. J. Thomson, F. Y. Gardes, Y. Hu, G. Mashanovich, M. Fournier, P. Grosse, J. M. Fedeli, and G. T. Reed, “High contrast 40Gbit/s optical modulation in silicon,” Opt. Express 19(12), 11507–11516 (2011).
[Crossref] [PubMed]

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T. Pinguet, V. Sadagopan, A. Mekis, B. Analui, D. Kucharski, and S. Gloeckner, “A 1550 nm, 10 Gbps optical modulator with integrated driver in 130 nm CMOS,” In Group IV Photonics, 2007 4th IEEE International Conference on, 1–3 IEEE, 2007.
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Figures (5)

Fig. 1
Fig. 1

a.) Schematic of the distributed electrode design segment with concatenated capacitive and inductive lumped-elements. b.) Schematic showing how the optical waveguides are configured to realize a ‘double-pass’ RF/optical interaction within the electro-optic phase shifters. c) Distributed electrode MZM with 0.8 mm of RF/optical interaction length on each arm of the push-pull MZM (1.6 mm total), d) Magnified view of distributed electrode ‘double pass’ design with schematic highlights.

Fig. 2
Fig. 2

a) Periodic loaded MZM with no integrated inductors in the electrode design with 0.8 mm of RF/optical interaction length on each arm of the push-pull MZM (1.6 mm total), b.) Measured EO S21 in 0.8 mm per side MZM with and without inductors at −5V bias.

Fig. 3
Fig. 3

a.) Picture of an MZM with integrated inductors that had a 2.4 mm total PN junction RF/optic interaction length (1.2 mm per MZM arm). Also, a schematic highlight (red paths) of the optical waveguide path in each MZM arm are shown illustrating the asymmetric MZM design and different optical delays between each PN junction loaded section in each of the two MZM arms. b.) Measurements of the electrical S11 response from the device in Fig. 3(a) with integrated inductors, and also results are shown from a second MZM with a 2.4 mm RF/optic interaction length, but without integrated inductors.

Fig. 4
Fig. 4

a) Electro-optic S21 bandwidth of each MZM arm from the device shown in Fig. 3(a) with −5V reverse bias. b) Electrical S21 RF propagation loss measured in the MZM with integrated inductors shown in Fig. 3(a) with a −5V bias.

Fig. 5
Fig. 5

a) 3.1 dB ER 25 Gb/s eye with 1.75 Vpp drive and −0.8 V DC bias on each MZM arm from the device shown in Fig. 1(c), 1(b)) 11.2 dB ER eye from 5 Vpp drive and −2.5 V DC bias on each MZM arm from the device shown in Fig. 3(a), 3(c)) Same operating conditions as 5b but optical and RF inputs are launched in counter-propagating directions.

Equations (2)

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Z RF = L C RF = H m F m ,
ν RF = 1 L C RF = 1 H m F m ,

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