Abstract

We report the first demonstration of a diode pumped passively Q-switched Tm:LuAG laser near 2μm wavelength with Bi-doped or undoped GaAs wafer as saturable absorber. For Bi-doped GaAs saturable absorber, stable Q-switched pulses with duration of 63.3ns under a repetition rate of 132.7 kHz and pulse energy of 5.51μJ are generated. In comparison to the passively Q-switched laser with undoped GaAs saturable absorber, the laser with Bi-doped GaAs can produce shorter pulses and higher peak power at almost the same incident pump power. The results suggest that Bi-doped GaAs can be an attractive candidate of saturable absorber for Q-switched laser near 2μm wavelength.

© 2015 Optical Society of America

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    [Crossref]
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    [Crossref] [PubMed]
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    [Crossref] [PubMed]
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  25. I. H. Baek, H. W. Lee, S. Bae, B. H. Hong, Y. H. Ahn, D.-I. Yeom, and F. Rotermund, “Efficient mode-locking of sub-70-fs Ti:sapphire laser by graphene saturable absorber,” Appl. Phys. Express 5(3), 032701 (2012).
    [Crossref]

2014 (2)

W. Cong, D. Li, S. Zhao, K. Yang, X. Li, H. Qiao, and J. Liu, “Diode-pumped passively Q-switched Nd:GGG laser with a Bi-doped GaAs semiconductor saturable absorber,” Opt. Commun. 332, 292–295 (2014).
[Crossref]

W. Cong, D. Li, S. Zhao, K. Yang, X. Li, H. Qiao, and J. Liu, “Passively Q-switched and mode-locked Nd:GGG laser with a Bi-doped GaAs saturable absorber,” Opt. Express 22(12), 14812–14818 (2014).
[Crossref] [PubMed]

2013 (2)

2012 (5)

J. Liu, Y. Wang, Z. Qu, and X. Fan, “2μm passive Q-switched mode-locked Tm3+:YAP laser with single-walled carbon nanotube absorber,” Opt. Laser Technol. 44(4), 960–962 (2012).
[Crossref]

N. Leindecker, A. Marandi, R. L. Byer, K. L. Vodopyanov, J. Jiang, I. Hartl, M. Fermann, and P. G. Schunemann, “Octave-spanning ultrafast OPO with 2.6-6.1 µm instantaneous bandwidth pumped by femtosecond Tm-fiber laser,” Opt. Express 20(7), 7046–7053 (2012).
[Crossref] [PubMed]

D. Li, M. Yang, S. Zhao, Y. Cai, and Y. Feng, “First principles study of bismuth alloying effects in GaAs saturable absorber,” Opt. Express 20(10), 11574–11580 (2012).
[PubMed]

A. R. Mohmad, F. Bastiman, C. J. Hunter, R. Richards, S. J. Sweeney, J. S. Ng, and J. P. R. David, “Effects of rapid thermal annealing on GaAs1-xBix alloys,” Appl. Phys. Lett. 101(1), 012106 (2012).
[Crossref]

I. H. Baek, H. W. Lee, S. Bae, B. H. Hong, Y. H. Ahn, D.-I. Yeom, and F. Rotermund, “Efficient mode-locking of sub-70-fs Ti:sapphire laser by graphene saturable absorber,” Appl. Phys. Express 5(3), 032701 (2012).
[Crossref]

2011 (1)

2010 (1)

2006 (2)

M. S. Gaponenko, A. M. Malyarevich, K. V. Yumashev, H. Raaben, A. A. Zhilin, and A. A. Lipovskii, “Holmium lasers passively Q-switched with PbS quantum-dot-doped glasses,” Appl. Opt. 45(3), 536–539 (2006).
[Crossref] [PubMed]

S. P. Ng, D. Y. Tang, A. Q. Liu, L. J. Qin, and X. L. Meng, “Short pulse passively Q-switched Nd:GdYVO4 laser using a GaAs mirror,” Opt. Commun. 259(1), 256–260 (2006).
[Crossref]

2005 (1)

F. Z. Qamar and T. A. King, “Passive Q-switching of the Tm-silica fibre laser near 2μm by a Cr2+:ZnSe saturable absorber crystal,” Opt. Commun. 248(4–6), 501–508 (2005).
[Crossref]

2004 (2)

J. Kong, D. Tang, J. Lu, K. Ueda, H. Yagi, and T. Yanagitani, “Passively Q-switched Yb:Y(2)O(3 )ceramic laser with a GaAs output coupler,” Opt. Express 12(15), 3560–3566 (2004).
[Crossref] [PubMed]

L. J. Qin, X. L. Meng, C. L. Du, L. Zhu, B. C. Xu, H. Z. Xu, F. Y. Jiang, and Z. S. Shao, “A diode-pumped passively Q-switched Nd:GdVO4 laser with a GaAs saturable absorption,” Opt. Laser Technol. 36(1), 47–50 (2004).
[Crossref]

2001 (1)

A. V. Podlipensky, V. G. Shcherbitsky, N. V. Kuleshov, V. I. Levchenko, V. N. Yakimovich, M. Mond, E. Heumann, G. Huber, H. Kretschmann, and S. Kück, “Efficient laser operation and continuous-wave diode pumping of Cr2+:ZnSe single crystals,” Appl. Phys. B 72(2), 253–255 (2001).
[Crossref]

1997 (2)

Y. Bai, N. Wu, J. Zhang, J. Li, S. Li, J. Xu, and P. Deng, “Passively Q-switched Nd:YVO(4) laser with a Cr(4+):YAG crystal saturable absorber,” Appl. Opt. 36(12), 2468–2472 (1997).
[Crossref] [PubMed]

A. Agnesi, S. Dell’Acqua, C. Morello, G. Piccinno, G. C. Reali, and Z. Sun, “Diode-Pumped Neodymium Lasers Repetitively Q-Switched by Cr4+:YAG Solid-State Saturable Absorbers,” IEEE J. Quantum Electron. 3(1), 45–52 (1997).
[Crossref]

1996 (1)

1995 (2)

N. P. Barnes, M. G. Jani, and R. L. Hutcheson, “Diode-pumped, room-temperature Tm:LuAG laser,” Appl. Opt. 34(21), 4290–4294 (1995).
[Crossref] [PubMed]

E. K. Dang and R. J. Gooding, “Theory of the effects of rapid thermal annealing on thin-film crystallization,” Phys. Rev. Lett. 74(19), 3848–3851 (1995).
[Crossref] [PubMed]

1994 (1)

1991 (1)

1988 (1)

A. L. Smirl, G. C. Valley, K. Bohnert, and T. F. Boggess, “Picosecond Photorefractive and Free-Carrier Transient Energy Transfer in GaAs at 1 μm,” IEEE J. Quantum Electron. 24(2), 289–303 (1988).
[Crossref]

Agnesi, A.

A. Agnesi, S. Dell’Acqua, C. Morello, G. Piccinno, G. C. Reali, and Z. Sun, “Diode-Pumped Neodymium Lasers Repetitively Q-Switched by Cr4+:YAG Solid-State Saturable Absorbers,” IEEE J. Quantum Electron. 3(1), 45–52 (1997).
[Crossref]

Ahn, Y. H.

I. H. Baek, H. W. Lee, S. Bae, B. H. Hong, Y. H. Ahn, D.-I. Yeom, and F. Rotermund, “Efficient mode-locking of sub-70-fs Ti:sapphire laser by graphene saturable absorber,” Appl. Phys. Express 5(3), 032701 (2012).
[Crossref]

Bae, S.

I. H. Baek, H. W. Lee, S. Bae, B. H. Hong, Y. H. Ahn, D.-I. Yeom, and F. Rotermund, “Efficient mode-locking of sub-70-fs Ti:sapphire laser by graphene saturable absorber,” Appl. Phys. Express 5(3), 032701 (2012).
[Crossref]

Baek, I. H.

I. H. Baek, H. W. Lee, S. Bae, B. H. Hong, Y. H. Ahn, D.-I. Yeom, and F. Rotermund, “Efficient mode-locking of sub-70-fs Ti:sapphire laser by graphene saturable absorber,” Appl. Phys. Express 5(3), 032701 (2012).
[Crossref]

Bai, Y.

Barnes, N. P.

Bastiman, F.

A. R. Mohmad, F. Bastiman, C. J. Hunter, R. Richards, S. J. Sweeney, J. S. Ng, and J. P. R. David, “Effects of rapid thermal annealing on GaAs1-xBix alloys,” Appl. Phys. Lett. 101(1), 012106 (2012).
[Crossref]

Boggess, T. F.

A. L. Smirl, G. C. Valley, K. Bohnert, and T. F. Boggess, “Picosecond Photorefractive and Free-Carrier Transient Energy Transfer in GaAs at 1 μm,” IEEE J. Quantum Electron. 24(2), 289–303 (1988).
[Crossref]

Bohnert, K.

A. L. Smirl, G. C. Valley, K. Bohnert, and T. F. Boggess, “Picosecond Photorefractive and Free-Carrier Transient Energy Transfer in GaAs at 1 μm,” IEEE J. Quantum Electron. 24(2), 289–303 (1988).
[Crossref]

Byer, R. L.

Cai, Y.

Cong, W.

W. Cong, D. Li, S. Zhao, K. Yang, X. Li, H. Qiao, and J. Liu, “Passively Q-switched and mode-locked Nd:GGG laser with a Bi-doped GaAs saturable absorber,” Opt. Express 22(12), 14812–14818 (2014).
[Crossref] [PubMed]

W. Cong, D. Li, S. Zhao, K. Yang, X. Li, H. Qiao, and J. Liu, “Diode-pumped passively Q-switched Nd:GGG laser with a Bi-doped GaAs semiconductor saturable absorber,” Opt. Commun. 332, 292–295 (2014).
[Crossref]

Dang, E. K.

E. K. Dang and R. J. Gooding, “Theory of the effects of rapid thermal annealing on thin-film crystallization,” Phys. Rev. Lett. 74(19), 3848–3851 (1995).
[Crossref] [PubMed]

David, J. P. R.

A. R. Mohmad, F. Bastiman, C. J. Hunter, R. Richards, S. J. Sweeney, J. S. Ng, and J. P. R. David, “Effects of rapid thermal annealing on GaAs1-xBix alloys,” Appl. Phys. Lett. 101(1), 012106 (2012).
[Crossref]

Dell’Acqua, S.

A. Agnesi, S. Dell’Acqua, C. Morello, G. Piccinno, G. C. Reali, and Z. Sun, “Diode-Pumped Neodymium Lasers Repetitively Q-Switched by Cr4+:YAG Solid-State Saturable Absorbers,” IEEE J. Quantum Electron. 3(1), 45–52 (1997).
[Crossref]

Deng, P.

Du, C. L.

L. J. Qin, X. L. Meng, C. L. Du, L. Zhu, B. C. Xu, H. Z. Xu, F. Y. Jiang, and Z. S. Shao, “A diode-pumped passively Q-switched Nd:GdVO4 laser with a GaAs saturable absorption,” Opt. Laser Technol. 36(1), 47–50 (2004).
[Crossref]

Fan, X.

J. Liu, Y. Wang, Z. Qu, and X. Fan, “2μm passive Q-switched mode-locked Tm3+:YAP laser with single-walled carbon nanotube absorber,” Opt. Laser Technol. 44(4), 960–962 (2012).
[Crossref]

Feng, T. L.

Feng, Y.

Fermann, M.

Fuhrberg, P.

Gaeta, A. L.

Gao, C.

Gao, M.

Gaponenko, M. S.

Gooding, R. J.

E. K. Dang and R. J. Gooding, “Theory of the effects of rapid thermal annealing on thin-film crystallization,” Phys. Rev. Lett. 74(19), 3848–3851 (1995).
[Crossref] [PubMed]

Grund, C. J.

Hale, C. P.

Hartl, I.

He, J. L.

Henderson, S. W.

Heumann, E.

A. V. Podlipensky, V. G. Shcherbitsky, N. V. Kuleshov, V. I. Levchenko, V. N. Yakimovich, M. Mond, E. Heumann, G. Huber, H. Kretschmann, and S. Kück, “Efficient laser operation and continuous-wave diode pumping of Cr2+:ZnSe single crystals,” Appl. Phys. B 72(2), 253–255 (2001).
[Crossref]

Hong, B. H.

I. H. Baek, H. W. Lee, S. Bae, B. H. Hong, Y. H. Ahn, D.-I. Yeom, and F. Rotermund, “Efficient mode-locking of sub-70-fs Ti:sapphire laser by graphene saturable absorber,” Appl. Phys. Express 5(3), 032701 (2012).
[Crossref]

Hou, J.

Huber, G.

P. Koopmann, S. Lamrini, K. Scholle, P. Fuhrberg, K. Petermann, and G. Huber, “Efficient diode-pumped laser operation of Tm:Lu2O3 around 2 μm,” Opt. Lett. 36(6), 948–950 (2011).
[Crossref] [PubMed]

A. V. Podlipensky, V. G. Shcherbitsky, N. V. Kuleshov, V. I. Levchenko, V. N. Yakimovich, M. Mond, E. Heumann, G. Huber, H. Kretschmann, and S. Kück, “Efficient laser operation and continuous-wave diode pumping of Cr2+:ZnSe single crystals,” Appl. Phys. B 72(2), 253–255 (2001).
[Crossref]

Huffaker, A. V.

Hunter, C. J.

A. R. Mohmad, F. Bastiman, C. J. Hunter, R. Richards, S. J. Sweeney, J. S. Ng, and J. P. R. David, “Effects of rapid thermal annealing on GaAs1-xBix alloys,” Appl. Phys. Lett. 101(1), 012106 (2012).
[Crossref]

Hutcheson, R. L.

Jani, M. G.

Jiang, F. Y.

L. J. Qin, X. L. Meng, C. L. Du, L. Zhu, B. C. Xu, H. Z. Xu, F. Y. Jiang, and Z. S. Shao, “A diode-pumped passively Q-switched Nd:GdVO4 laser with a GaAs saturable absorption,” Opt. Laser Technol. 36(1), 47–50 (2004).
[Crossref]

Jiang, J.

Kajava, T. T.

Kane, T. J.

Kavaya, M. J.

King, T. A.

F. Z. Qamar and T. A. King, “Passive Q-switching of the Tm-silica fibre laser near 2μm by a Cr2+:ZnSe saturable absorber crystal,” Opt. Commun. 248(4–6), 501–508 (2005).
[Crossref]

Kmetec, J. D.

Kong, J.

Koopmann, P.

Kretschmann, H.

A. V. Podlipensky, V. G. Shcherbitsky, N. V. Kuleshov, V. I. Levchenko, V. N. Yakimovich, M. Mond, E. Heumann, G. Huber, H. Kretschmann, and S. Kück, “Efficient laser operation and continuous-wave diode pumping of Cr2+:ZnSe single crystals,” Appl. Phys. B 72(2), 253–255 (2001).
[Crossref]

Kubo, T. S.

Kück, S.

A. V. Podlipensky, V. G. Shcherbitsky, N. V. Kuleshov, V. I. Levchenko, V. N. Yakimovich, M. Mond, E. Heumann, G. Huber, H. Kretschmann, and S. Kück, “Efficient laser operation and continuous-wave diode pumping of Cr2+:ZnSe single crystals,” Appl. Phys. B 72(2), 253–255 (2001).
[Crossref]

Kuleshov, N. V.

A. V. Podlipensky, V. G. Shcherbitsky, N. V. Kuleshov, V. I. Levchenko, V. N. Yakimovich, M. Mond, E. Heumann, G. Huber, H. Kretschmann, and S. Kück, “Efficient laser operation and continuous-wave diode pumping of Cr2+:ZnSe single crystals,” Appl. Phys. B 72(2), 253–255 (2001).
[Crossref]

Lamrini, S.

Lee, H. W.

I. H. Baek, H. W. Lee, S. Bae, B. H. Hong, Y. H. Ahn, D.-I. Yeom, and F. Rotermund, “Efficient mode-locking of sub-70-fs Ti:sapphire laser by graphene saturable absorber,” Appl. Phys. Express 5(3), 032701 (2012).
[Crossref]

Leindecker, N.

Levchenko, V. I.

A. V. Podlipensky, V. G. Shcherbitsky, N. V. Kuleshov, V. I. Levchenko, V. N. Yakimovich, M. Mond, E. Heumann, G. Huber, H. Kretschmann, and S. Kück, “Efficient laser operation and continuous-wave diode pumping of Cr2+:ZnSe single crystals,” Appl. Phys. B 72(2), 253–255 (2001).
[Crossref]

Li, D.

Li, D. C.

Li, G.

Li, G. Q.

Li, J.

Li, S.

Li, X.

W. Cong, D. Li, S. Zhao, K. Yang, X. Li, H. Qiao, and J. Liu, “Passively Q-switched and mode-locked Nd:GGG laser with a Bi-doped GaAs saturable absorber,” Opt. Express 22(12), 14812–14818 (2014).
[Crossref] [PubMed]

W. Cong, D. Li, S. Zhao, K. Yang, X. Li, H. Qiao, and J. Liu, “Diode-pumped passively Q-switched Nd:GGG laser with a Bi-doped GaAs semiconductor saturable absorber,” Opt. Commun. 332, 292–295 (2014).
[Crossref]

Lipovskii, A. A.

Liu, A. Q.

S. P. Ng, D. Y. Tang, A. Q. Liu, L. J. Qin, and X. L. Meng, “Short pulse passively Q-switched Nd:GdYVO4 laser using a GaAs mirror,” Opt. Commun. 259(1), 256–260 (2006).
[Crossref]

Liu, J.

W. Cong, D. Li, S. Zhao, K. Yang, X. Li, H. Qiao, and J. Liu, “Diode-pumped passively Q-switched Nd:GGG laser with a Bi-doped GaAs semiconductor saturable absorber,” Opt. Commun. 332, 292–295 (2014).
[Crossref]

W. Cong, D. Li, S. Zhao, K. Yang, X. Li, H. Qiao, and J. Liu, “Passively Q-switched and mode-locked Nd:GGG laser with a Bi-doped GaAs saturable absorber,” Opt. Express 22(12), 14812–14818 (2014).
[Crossref] [PubMed]

J. Liu, Y. Wang, Z. Qu, and X. Fan, “2μm passive Q-switched mode-locked Tm3+:YAP laser with single-walled carbon nanotube absorber,” Opt. Laser Technol. 44(4), 960–962 (2012).
[Crossref]

Liu, L.

Lu, J.

Magee, J. R.

Malyarevich, A. M.

Marandi, A.

Meng, X. L.

S. P. Ng, D. Y. Tang, A. Q. Liu, L. J. Qin, and X. L. Meng, “Short pulse passively Q-switched Nd:GdYVO4 laser using a GaAs mirror,” Opt. Commun. 259(1), 256–260 (2006).
[Crossref]

L. J. Qin, X. L. Meng, C. L. Du, L. Zhu, B. C. Xu, H. Z. Xu, F. Y. Jiang, and Z. S. Shao, “A diode-pumped passively Q-switched Nd:GdVO4 laser with a GaAs saturable absorption,” Opt. Laser Technol. 36(1), 47–50 (2004).
[Crossref]

Mohmad, A. R.

A. R. Mohmad, F. Bastiman, C. J. Hunter, R. Richards, S. J. Sweeney, J. S. Ng, and J. P. R. David, “Effects of rapid thermal annealing on GaAs1-xBix alloys,” Appl. Phys. Lett. 101(1), 012106 (2012).
[Crossref]

Mond, M.

A. V. Podlipensky, V. G. Shcherbitsky, N. V. Kuleshov, V. I. Levchenko, V. N. Yakimovich, M. Mond, E. Heumann, G. Huber, H. Kretschmann, and S. Kück, “Efficient laser operation and continuous-wave diode pumping of Cr2+:ZnSe single crystals,” Appl. Phys. B 72(2), 253–255 (2001).
[Crossref]

Morello, C.

A. Agnesi, S. Dell’Acqua, C. Morello, G. Piccinno, G. C. Reali, and Z. Sun, “Diode-Pumped Neodymium Lasers Repetitively Q-Switched by Cr4+:YAG Solid-State Saturable Absorbers,” IEEE J. Quantum Electron. 3(1), 45–52 (1997).
[Crossref]

Ng, J. S.

A. R. Mohmad, F. Bastiman, C. J. Hunter, R. Richards, S. J. Sweeney, J. S. Ng, and J. P. R. David, “Effects of rapid thermal annealing on GaAs1-xBix alloys,” Appl. Phys. Lett. 101(1), 012106 (2012).
[Crossref]

Ng, S. P.

S. P. Ng, D. Y. Tang, A. Q. Liu, L. J. Qin, and X. L. Meng, “Short pulse passively Q-switched Nd:GdYVO4 laser using a GaAs mirror,” Opt. Commun. 259(1), 256–260 (2006).
[Crossref]

Petermann, K.

Piccinno, G.

A. Agnesi, S. Dell’Acqua, C. Morello, G. Piccinno, G. C. Reali, and Z. Sun, “Diode-Pumped Neodymium Lasers Repetitively Q-Switched by Cr4+:YAG Solid-State Saturable Absorbers,” IEEE J. Quantum Electron. 3(1), 45–52 (1997).
[Crossref]

Podlipensky, A. V.

A. V. Podlipensky, V. G. Shcherbitsky, N. V. Kuleshov, V. I. Levchenko, V. N. Yakimovich, M. Mond, E. Heumann, G. Huber, H. Kretschmann, and S. Kück, “Efficient laser operation and continuous-wave diode pumping of Cr2+:ZnSe single crystals,” Appl. Phys. B 72(2), 253–255 (2001).
[Crossref]

Qamar, F. Z.

F. Z. Qamar and T. A. King, “Passive Q-switching of the Tm-silica fibre laser near 2μm by a Cr2+:ZnSe saturable absorber crystal,” Opt. Commun. 248(4–6), 501–508 (2005).
[Crossref]

Qiao, H.

W. Cong, D. Li, S. Zhao, K. Yang, X. Li, H. Qiao, and J. Liu, “Diode-pumped passively Q-switched Nd:GGG laser with a Bi-doped GaAs semiconductor saturable absorber,” Opt. Commun. 332, 292–295 (2014).
[Crossref]

W. Cong, D. Li, S. Zhao, K. Yang, X. Li, H. Qiao, and J. Liu, “Passively Q-switched and mode-locked Nd:GGG laser with a Bi-doped GaAs saturable absorber,” Opt. Express 22(12), 14812–14818 (2014).
[Crossref] [PubMed]

Qiao, W. C.

Qin, L. J.

S. P. Ng, D. Y. Tang, A. Q. Liu, L. J. Qin, and X. L. Meng, “Short pulse passively Q-switched Nd:GdYVO4 laser using a GaAs mirror,” Opt. Commun. 259(1), 256–260 (2006).
[Crossref]

L. J. Qin, X. L. Meng, C. L. Du, L. Zhu, B. C. Xu, H. Z. Xu, F. Y. Jiang, and Z. S. Shao, “A diode-pumped passively Q-switched Nd:GdVO4 laser with a GaAs saturable absorption,” Opt. Laser Technol. 36(1), 47–50 (2004).
[Crossref]

Qu, Z.

J. Liu, Y. Wang, Z. Qu, and X. Fan, “2μm passive Q-switched mode-locked Tm3+:YAP laser with single-walled carbon nanotube absorber,” Opt. Laser Technol. 44(4), 960–962 (2012).
[Crossref]

Raaben, H.

Reali, G. C.

A. Agnesi, S. Dell’Acqua, C. Morello, G. Piccinno, G. C. Reali, and Z. Sun, “Diode-Pumped Neodymium Lasers Repetitively Q-Switched by Cr4+:YAG Solid-State Saturable Absorbers,” IEEE J. Quantum Electron. 3(1), 45–52 (1997).
[Crossref]

Richards, R.

A. R. Mohmad, F. Bastiman, C. J. Hunter, R. Richards, S. J. Sweeney, J. S. Ng, and J. P. R. David, “Effects of rapid thermal annealing on GaAs1-xBix alloys,” Appl. Phys. Lett. 101(1), 012106 (2012).
[Crossref]

Rotermund, F.

I. H. Baek, H. W. Lee, S. Bae, B. H. Hong, Y. H. Ahn, D.-I. Yeom, and F. Rotermund, “Efficient mode-locking of sub-70-fs Ti:sapphire laser by graphene saturable absorber,” Appl. Phys. Express 5(3), 032701 (2012).
[Crossref]

Scholle, K.

Schunemann, P. G.

Shao, Z. S.

L. J. Qin, X. L. Meng, C. L. Du, L. Zhu, B. C. Xu, H. Z. Xu, F. Y. Jiang, and Z. S. Shao, “A diode-pumped passively Q-switched Nd:GdVO4 laser with a GaAs saturable absorption,” Opt. Laser Technol. 36(1), 47–50 (2004).
[Crossref]

Shcherbitsky, V. G.

A. V. Podlipensky, V. G. Shcherbitsky, N. V. Kuleshov, V. I. Levchenko, V. N. Yakimovich, M. Mond, E. Heumann, G. Huber, H. Kretschmann, and S. Kück, “Efficient laser operation and continuous-wave diode pumping of Cr2+:ZnSe single crystals,” Appl. Phys. B 72(2), 253–255 (2001).
[Crossref]

Smirl, A. L.

A. L. Smirl, G. C. Valley, K. Bohnert, and T. F. Boggess, “Picosecond Photorefractive and Free-Carrier Transient Energy Transfer in GaAs at 1 μm,” IEEE J. Quantum Electron. 24(2), 289–303 (1988).
[Crossref]

Su, L. B.

Sun, Z.

A. Agnesi, S. Dell’Acqua, C. Morello, G. Piccinno, G. C. Reali, and Z. Sun, “Diode-Pumped Neodymium Lasers Repetitively Q-Switched by Cr4+:YAG Solid-State Saturable Absorbers,” IEEE J. Quantum Electron. 3(1), 45–52 (1997).
[Crossref]

Sweeney, S. J.

A. R. Mohmad, F. Bastiman, C. J. Hunter, R. Richards, S. J. Sweeney, J. S. Ng, and J. P. R. David, “Effects of rapid thermal annealing on GaAs1-xBix alloys,” Appl. Phys. Lett. 101(1), 012106 (2012).
[Crossref]

Tang, D.

Tang, D. Y.

S. P. Ng, D. Y. Tang, A. Q. Liu, L. J. Qin, and X. L. Meng, “Short pulse passively Q-switched Nd:GdYVO4 laser using a GaAs mirror,” Opt. Commun. 259(1), 256–260 (2006).
[Crossref]

Tian, Y.

Ueda, K.

Valley, G. C.

A. L. Smirl, G. C. Valley, K. Bohnert, and T. F. Boggess, “Picosecond Photorefractive and Free-Carrier Transient Energy Transfer in GaAs at 1 μm,” IEEE J. Quantum Electron. 24(2), 289–303 (1988).
[Crossref]

Vodopyanov, K. L.

Wang, L.

Wang, Q. G.

Wang, Y.

J. Liu, Y. Wang, Z. Qu, and X. Fan, “2μm passive Q-switched mode-locked Tm3+:YAP laser with single-walled carbon nanotube absorber,” Opt. Laser Technol. 44(4), 960–962 (2012).
[Crossref]

B. Yao, Y. Tian, G. Li, and Y. Wang, “InGaAs/GaAs saturable absorber for diode-pumped passively Q-switched dual-wavelength Tm:YAP lasers,” Opt. Express 18(13), 13574–13579 (2010).
[PubMed]

Wu, N.

Xu, B. C.

L. J. Qin, X. L. Meng, C. L. Du, L. Zhu, B. C. Xu, H. Z. Xu, F. Y. Jiang, and Z. S. Shao, “A diode-pumped passively Q-switched Nd:GdVO4 laser with a GaAs saturable absorption,” Opt. Laser Technol. 36(1), 47–50 (2004).
[Crossref]

Xu, H. Z.

L. J. Qin, X. L. Meng, C. L. Du, L. Zhu, B. C. Xu, H. Z. Xu, F. Y. Jiang, and Z. S. Shao, “A diode-pumped passively Q-switched Nd:GdVO4 laser with a GaAs saturable absorption,” Opt. Laser Technol. 36(1), 47–50 (2004).
[Crossref]

Xu, J.

Xu, X. D.

Yagi, H.

Yakimovich, V. N.

A. V. Podlipensky, V. G. Shcherbitsky, N. V. Kuleshov, V. I. Levchenko, V. N. Yakimovich, M. Mond, E. Heumann, G. Huber, H. Kretschmann, and S. Kück, “Efficient laser operation and continuous-wave diode pumping of Cr2+:ZnSe single crystals,” Appl. Phys. B 72(2), 253–255 (2001).
[Crossref]

Yanagitani, T.

Yang, K.

W. Cong, D. Li, S. Zhao, K. Yang, X. Li, H. Qiao, and J. Liu, “Diode-pumped passively Q-switched Nd:GGG laser with a Bi-doped GaAs semiconductor saturable absorber,” Opt. Commun. 332, 292–295 (2014).
[Crossref]

W. Cong, D. Li, S. Zhao, K. Yang, X. Li, H. Qiao, and J. Liu, “Passively Q-switched and mode-locked Nd:GGG laser with a Bi-doped GaAs saturable absorber,” Opt. Express 22(12), 14812–14818 (2014).
[Crossref] [PubMed]

Yang, K. J.

Yang, M.

Yang, Y.

Yao, B.

Yeom, D.-I.

I. H. Baek, H. W. Lee, S. Bae, B. H. Hong, Y. H. Ahn, D.-I. Yeom, and F. Rotermund, “Efficient mode-locking of sub-70-fs Ti:sapphire laser by graphene saturable absorber,” Appl. Phys. Express 5(3), 032701 (2012).
[Crossref]

Yue, F.

Yumashev, K. V.

Zhang, J.

Zhao, J.

Zhao, S.

Zhao, S. Z.

Zheng, L. H.

Zhilin, A. A.

Zhu, L.

L. J. Qin, X. L. Meng, C. L. Du, L. Zhu, B. C. Xu, H. Z. Xu, F. Y. Jiang, and Z. S. Shao, “A diode-pumped passively Q-switched Nd:GdVO4 laser with a GaAs saturable absorption,” Opt. Laser Technol. 36(1), 47–50 (2004).
[Crossref]

Appl. Opt. (4)

Appl. Phys. B (1)

A. V. Podlipensky, V. G. Shcherbitsky, N. V. Kuleshov, V. I. Levchenko, V. N. Yakimovich, M. Mond, E. Heumann, G. Huber, H. Kretschmann, and S. Kück, “Efficient laser operation and continuous-wave diode pumping of Cr2+:ZnSe single crystals,” Appl. Phys. B 72(2), 253–255 (2001).
[Crossref]

Appl. Phys. Express (1)

I. H. Baek, H. W. Lee, S. Bae, B. H. Hong, Y. H. Ahn, D.-I. Yeom, and F. Rotermund, “Efficient mode-locking of sub-70-fs Ti:sapphire laser by graphene saturable absorber,” Appl. Phys. Express 5(3), 032701 (2012).
[Crossref]

Appl. Phys. Lett. (1)

A. R. Mohmad, F. Bastiman, C. J. Hunter, R. Richards, S. J. Sweeney, J. S. Ng, and J. P. R. David, “Effects of rapid thermal annealing on GaAs1-xBix alloys,” Appl. Phys. Lett. 101(1), 012106 (2012).
[Crossref]

IEEE J. Quantum Electron. (2)

A. Agnesi, S. Dell’Acqua, C. Morello, G. Piccinno, G. C. Reali, and Z. Sun, “Diode-Pumped Neodymium Lasers Repetitively Q-Switched by Cr4+:YAG Solid-State Saturable Absorbers,” IEEE J. Quantum Electron. 3(1), 45–52 (1997).
[Crossref]

A. L. Smirl, G. C. Valley, K. Bohnert, and T. F. Boggess, “Picosecond Photorefractive and Free-Carrier Transient Energy Transfer in GaAs at 1 μm,” IEEE J. Quantum Electron. 24(2), 289–303 (1988).
[Crossref]

Opt. Commun. (3)

F. Z. Qamar and T. A. King, “Passive Q-switching of the Tm-silica fibre laser near 2μm by a Cr2+:ZnSe saturable absorber crystal,” Opt. Commun. 248(4–6), 501–508 (2005).
[Crossref]

S. P. Ng, D. Y. Tang, A. Q. Liu, L. J. Qin, and X. L. Meng, “Short pulse passively Q-switched Nd:GdYVO4 laser using a GaAs mirror,” Opt. Commun. 259(1), 256–260 (2006).
[Crossref]

W. Cong, D. Li, S. Zhao, K. Yang, X. Li, H. Qiao, and J. Liu, “Diode-pumped passively Q-switched Nd:GGG laser with a Bi-doped GaAs semiconductor saturable absorber,” Opt. Commun. 332, 292–295 (2014).
[Crossref]

Opt. Express (6)

Opt. Laser Technol. (2)

J. Liu, Y. Wang, Z. Qu, and X. Fan, “2μm passive Q-switched mode-locked Tm3+:YAP laser with single-walled carbon nanotube absorber,” Opt. Laser Technol. 44(4), 960–962 (2012).
[Crossref]

L. J. Qin, X. L. Meng, C. L. Du, L. Zhu, B. C. Xu, H. Z. Xu, F. Y. Jiang, and Z. S. Shao, “A diode-pumped passively Q-switched Nd:GdVO4 laser with a GaAs saturable absorption,” Opt. Laser Technol. 36(1), 47–50 (2004).
[Crossref]

Opt. Lett. (4)

Phys. Rev. Lett. (1)

E. K. Dang and R. J. Gooding, “Theory of the effects of rapid thermal annealing on thin-film crystallization,” Phys. Rev. Lett. 74(19), 3848–3851 (1995).
[Crossref] [PubMed]

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Figures (9)

Fig. 1
Fig. 1 The schematic of passively Q-switched Tm:LuAG laser.
Fig. 2
Fig. 2 The absorption spectrum of Bi-doped GaAs(without annealing and annealed at 700°С).
Fig. 3
Fig. 3 The nonlinear transmission versus incident pulse fluence. (a) The nonlinear transmission of Bi-doped GaAs sample. (b) The nonlinear transmission of undoped GaAs sample.
Fig. 4
Fig. 4 Average output power versus incident pump power.
Fig. 5
Fig. 5 The pulse duration versus the incident pump power.
Fig. 6
Fig. 6 Pulse repetition rate versus the incident pump power.
Fig. 7
Fig. 7 (a) Peak power versus the incident pump power. (b) Single pulse energy versus the incident pump power.
Fig. 8
Fig. 8 Temporal Q-switched pulse oscilloscope profile at the incident pump power of 6.7W. (a) The pulse profile of Q-switched laser with undoped GaAs. (b) The pulse profile of Q-switched laser with the Bi-doped GaAs.
Fig. 9
Fig. 9 Temporal Q-switched pulse train oscilloscope profile (a).The profile of Q-switched laser with undoped GaAs. (b).The profile of Q-switched laser with Bi-doped GaAs.

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