Abstract

Optical design in enhancing optical absorption of group-III-nitride- and multiple quantum well-based GaN/InxGa1-xN/cSi dual-junction tandem solar cells with triangular diffraction grating is simulated and optimized by using combined two-dimensional rigorous coupled wave analysis and transfer matrix methods. This paper thoroughly examines these phenomena of optical absorption affected by antireflection coatings, multiple thin-film layers and diffraction gratings with the integrated perspectives of semiconductor physics and electromagnetic theory for the first time. An improvement of 58% in absorption compared to the prototype SC is obtained which means more than 80% of incoming light ( > EgSi) can be harvested in this thin-film (< 4 μm in total) design.

© 2015 Optical Society of America

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References

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2012 (3)

L. J. H. Lin and Y.-P. Chiou, “Improving thin-film crystalline silicon solar cell efficiency with back surface field layer and blaze diffractive grating,” Sol. Energy 86(5), 1485–1490 (2012).
[Crossref]

M. Nawaz and A. Ahmad, “A TCAD-based modeling of GaN/InGaN/Si solar cells,” Semicond. Sci. Technol. 27(3), 035019 (2012).
[Crossref]

O. D. Miller, E. Yablonovitch, and S. R. Kurtz, “Intense internal and external fluorescence as solar cells approach the Shockley-Queisser efficiency limit,” IEEE J. Photovoltaics 2, 303–311 (2012).
[Crossref]

2011 (1)

C. J. Neufeld, S. C. Cruz, R. M. Farrell, M. Iza, J. R. Lang, S. Keller, S. Nakamura, S. P. DenBaars, J. S. Speck, and U. K. Mishra, “Effect of doping and polarization on carrier collection in InGaN quantum well solar cells,” Appl. Phys. Lett. 98(24), 243507 (2011).
[Crossref]

2010 (2)

G. F. Brown, J. W. Ager, W. Walukiewicz, and J. Wu, “Finite element simulations of compositionally graded InGaN solar cells,” Sol. Energy Mater. Sol. Cells 94(3), 478–483 (2010).
[Crossref]

K. T. Chen, W. C. Huang, T. H. Hsieh, C. H. Hsieh, and C. F. Lin, “InGaN light emitting solar cells with a roughened N-face GaN surface through a laser decomposition process,” Opt. Express 18(22), 23406–23412 (2010).
[Crossref] [PubMed]

2009 (1)

L. A. Reichertz, I. Gherasoiu, K. M. Yu, V. M. Kao, W. Walukiewicz, and J. W. Ager, “Demonstration of a III–Nitride/Silicon Tandem Solar Cell,” Appl. Phys. Express 2(12), 122202 (2009).
[Crossref]

2008 (3)

L. Hsu and W. Walukiewicz, “Modeling of InGaN/Si tandem solar cells,” J. Appl. Phys. 104(2), 024507 (2008).
[Crossref]

S. P. Bremner, M. Y. Levy, and C. B. Honsberg, “Analysis of tandem solar cell efficiencies under AM1.5G spectrum using a rapid flux calculation method,” Prog. Photovolt. Res. Appl. 16(3), 225–233 (2008).
[Crossref]

C. J. Neufeld, N. G. Toledo, S. C. Cruz, M. Iza, S. P. DenBaars, and U. K. Mishra, “High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap,” Appl. Phys. Lett. 93(14), 143502 (2008).
[Crossref]

2007 (2)

O. Jani, I. Ferguson, C. Honsberg, and S. Kurtz, “Design and characterization of GaN/InGaN solar cells,” Appl. Phys. Lett. 91(13), 132117 (2007).
[Crossref]

D. Holec, P. M. F. J. Costa, M. J. Kappers, and C. J. Humphreys, “Critical thickness calculations for InGaN/GaN,” J. Cryst. Growth 303(1), 314–317 (2007).
[Crossref]

2006 (1)

S.-Y. Lien, D. Wuu, W. Yeh, and J. Liu, “Tri-layer antireflection coatings (SiO2/SiO2-TiO2/TiO2) for silicon solar cells using a sol-gel technique,” Sol. Energy Mater. Sol. Cells 90(16), 2710–2719 (2006).
[Crossref]

1998 (3)

S. Nakamura, M. Senoh, S. I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, “Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates,” Appl. Phys. Lett. 72(16), 2014–2016 (1998).
[Crossref]

M. J. Bergmann and H. C. Casey, “Optical-field calculations for lossy multiple-layer AlxGa1-xN/InxGa1-xN laser diodes,” J. Appl. Phys. 84(3), 1196–1203 (1998).
[Crossref]

M. Leung, A. Djurisic, and E. Li, “Refractive index of ingan/gan quantum well,” J. Appl. Phys. 84(11), 6312–6317 (1998).
[Crossref]

1996 (1)

1995 (2)

M. A. Green and M. J. Keevers, “Optical properties of intrinsic silicon at 300 K,” Prog. Photovolt. Res. Appl. 3(3), 189–192 (1995).
[Crossref]

S. Nakamura, M. Senoh, N. Iwasa, and S. I. Nagahama, “High power InGaN single quantum well structure blue and violet light emitting diodes,” Appl. Phys. Lett. 67(13), 1868–1870 (1995).
[Crossref]

1986 (1)

1981 (1)

Ager, J. W.

G. F. Brown, J. W. Ager, W. Walukiewicz, and J. Wu, “Finite element simulations of compositionally graded InGaN solar cells,” Sol. Energy Mater. Sol. Cells 94(3), 478–483 (2010).
[Crossref]

L. A. Reichertz, I. Gherasoiu, K. M. Yu, V. M. Kao, W. Walukiewicz, and J. W. Ager, “Demonstration of a III–Nitride/Silicon Tandem Solar Cell,” Appl. Phys. Express 2(12), 122202 (2009).
[Crossref]

Ahmad, A.

M. Nawaz and A. Ahmad, “A TCAD-based modeling of GaN/InGaN/Si solar cells,” Semicond. Sci. Technol. 27(3), 035019 (2012).
[Crossref]

Bergmann, M. J.

M. J. Bergmann and H. C. Casey, “Optical-field calculations for lossy multiple-layer AlxGa1-xN/InxGa1-xN laser diodes,” J. Appl. Phys. 84(3), 1196–1203 (1998).
[Crossref]

Bremner, S. P.

S. P. Bremner, M. Y. Levy, and C. B. Honsberg, “Analysis of tandem solar cell efficiencies under AM1.5G spectrum using a rapid flux calculation method,” Prog. Photovolt. Res. Appl. 16(3), 225–233 (2008).
[Crossref]

Brown, G. F.

G. F. Brown, J. W. Ager, W. Walukiewicz, and J. Wu, “Finite element simulations of compositionally graded InGaN solar cells,” Sol. Energy Mater. Sol. Cells 94(3), 478–483 (2010).
[Crossref]

Casey, H. C.

M. J. Bergmann and H. C. Casey, “Optical-field calculations for lossy multiple-layer AlxGa1-xN/InxGa1-xN laser diodes,” J. Appl. Phys. 84(3), 1196–1203 (1998).
[Crossref]

Chen, K. T.

Chiou, Y.-P.

L. J. H. Lin and Y.-P. Chiou, “Improving thin-film crystalline silicon solar cell efficiency with back surface field layer and blaze diffractive grating,” Sol. Energy 86(5), 1485–1490 (2012).
[Crossref]

Chocho, K.

S. Nakamura, M. Senoh, S. I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, “Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates,” Appl. Phys. Lett. 72(16), 2014–2016 (1998).
[Crossref]

Costa, P. M. F. J.

D. Holec, P. M. F. J. Costa, M. J. Kappers, and C. J. Humphreys, “Critical thickness calculations for InGaN/GaN,” J. Cryst. Growth 303(1), 314–317 (2007).
[Crossref]

Cruz, S. C.

C. J. Neufeld, S. C. Cruz, R. M. Farrell, M. Iza, J. R. Lang, S. Keller, S. Nakamura, S. P. DenBaars, J. S. Speck, and U. K. Mishra, “Effect of doping and polarization on carrier collection in InGaN quantum well solar cells,” Appl. Phys. Lett. 98(24), 243507 (2011).
[Crossref]

C. J. Neufeld, N. G. Toledo, S. C. Cruz, M. Iza, S. P. DenBaars, and U. K. Mishra, “High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap,” Appl. Phys. Lett. 93(14), 143502 (2008).
[Crossref]

DenBaars, S. P.

C. J. Neufeld, S. C. Cruz, R. M. Farrell, M. Iza, J. R. Lang, S. Keller, S. Nakamura, S. P. DenBaars, J. S. Speck, and U. K. Mishra, “Effect of doping and polarization on carrier collection in InGaN quantum well solar cells,” Appl. Phys. Lett. 98(24), 243507 (2011).
[Crossref]

C. J. Neufeld, N. G. Toledo, S. C. Cruz, M. Iza, S. P. DenBaars, and U. K. Mishra, “High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap,” Appl. Phys. Lett. 93(14), 143502 (2008).
[Crossref]

Djurisic, A.

M. Leung, A. Djurisic, and E. Li, “Refractive index of ingan/gan quantum well,” J. Appl. Phys. 84(11), 6312–6317 (1998).
[Crossref]

Farrell, R. M.

C. J. Neufeld, S. C. Cruz, R. M. Farrell, M. Iza, J. R. Lang, S. Keller, S. Nakamura, S. P. DenBaars, J. S. Speck, and U. K. Mishra, “Effect of doping and polarization on carrier collection in InGaN quantum well solar cells,” Appl. Phys. Lett. 98(24), 243507 (2011).
[Crossref]

Ferguson, I.

O. Jani, I. Ferguson, C. Honsberg, and S. Kurtz, “Design and characterization of GaN/InGaN solar cells,” Appl. Phys. Lett. 91(13), 132117 (2007).
[Crossref]

Gaylord, T. K.

Gherasoiu, I.

L. A. Reichertz, I. Gherasoiu, K. M. Yu, V. M. Kao, W. Walukiewicz, and J. W. Ager, “Demonstration of a III–Nitride/Silicon Tandem Solar Cell,” Appl. Phys. Express 2(12), 122202 (2009).
[Crossref]

Green, M. A.

M. A. Green and M. J. Keevers, “Optical properties of intrinsic silicon at 300 K,” Prog. Photovolt. Res. Appl. 3(3), 189–192 (1995).
[Crossref]

Holec, D.

D. Holec, P. M. F. J. Costa, M. J. Kappers, and C. J. Humphreys, “Critical thickness calculations for InGaN/GaN,” J. Cryst. Growth 303(1), 314–317 (2007).
[Crossref]

Honsberg, C.

O. Jani, I. Ferguson, C. Honsberg, and S. Kurtz, “Design and characterization of GaN/InGaN solar cells,” Appl. Phys. Lett. 91(13), 132117 (2007).
[Crossref]

Honsberg, C. B.

S. P. Bremner, M. Y. Levy, and C. B. Honsberg, “Analysis of tandem solar cell efficiencies under AM1.5G spectrum using a rapid flux calculation method,” Prog. Photovolt. Res. Appl. 16(3), 225–233 (2008).
[Crossref]

Hsieh, C. H.

Hsieh, T. H.

Hsu, L.

L. Hsu and W. Walukiewicz, “Modeling of InGaN/Si tandem solar cells,” J. Appl. Phys. 104(2), 024507 (2008).
[Crossref]

Huang, W. C.

Humphreys, C. J.

D. Holec, P. M. F. J. Costa, M. J. Kappers, and C. J. Humphreys, “Critical thickness calculations for InGaN/GaN,” J. Cryst. Growth 303(1), 314–317 (2007).
[Crossref]

Iwasa, N.

S. Nakamura, M. Senoh, S. I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, “Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates,” Appl. Phys. Lett. 72(16), 2014–2016 (1998).
[Crossref]

S. Nakamura, M. Senoh, N. Iwasa, and S. I. Nagahama, “High power InGaN single quantum well structure blue and violet light emitting diodes,” Appl. Phys. Lett. 67(13), 1868–1870 (1995).
[Crossref]

Iza, M.

C. J. Neufeld, S. C. Cruz, R. M. Farrell, M. Iza, J. R. Lang, S. Keller, S. Nakamura, S. P. DenBaars, J. S. Speck, and U. K. Mishra, “Effect of doping and polarization on carrier collection in InGaN quantum well solar cells,” Appl. Phys. Lett. 98(24), 243507 (2011).
[Crossref]

C. J. Neufeld, N. G. Toledo, S. C. Cruz, M. Iza, S. P. DenBaars, and U. K. Mishra, “High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap,” Appl. Phys. Lett. 93(14), 143502 (2008).
[Crossref]

Jani, O.

O. Jani, I. Ferguson, C. Honsberg, and S. Kurtz, “Design and characterization of GaN/InGaN solar cells,” Appl. Phys. Lett. 91(13), 132117 (2007).
[Crossref]

Kao, V. M.

L. A. Reichertz, I. Gherasoiu, K. M. Yu, V. M. Kao, W. Walukiewicz, and J. W. Ager, “Demonstration of a III–Nitride/Silicon Tandem Solar Cell,” Appl. Phys. Express 2(12), 122202 (2009).
[Crossref]

Kappers, M. J.

D. Holec, P. M. F. J. Costa, M. J. Kappers, and C. J. Humphreys, “Critical thickness calculations for InGaN/GaN,” J. Cryst. Growth 303(1), 314–317 (2007).
[Crossref]

Keevers, M. J.

M. A. Green and M. J. Keevers, “Optical properties of intrinsic silicon at 300 K,” Prog. Photovolt. Res. Appl. 3(3), 189–192 (1995).
[Crossref]

Keller, S.

C. J. Neufeld, S. C. Cruz, R. M. Farrell, M. Iza, J. R. Lang, S. Keller, S. Nakamura, S. P. DenBaars, J. S. Speck, and U. K. Mishra, “Effect of doping and polarization on carrier collection in InGaN quantum well solar cells,” Appl. Phys. Lett. 98(24), 243507 (2011).
[Crossref]

Kiyoku, H.

S. Nakamura, M. Senoh, S. I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, “Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates,” Appl. Phys. Lett. 72(16), 2014–2016 (1998).
[Crossref]

Kozaki, T.

S. Nakamura, M. Senoh, S. I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, “Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates,” Appl. Phys. Lett. 72(16), 2014–2016 (1998).
[Crossref]

Kurtz, S.

O. Jani, I. Ferguson, C. Honsberg, and S. Kurtz, “Design and characterization of GaN/InGaN solar cells,” Appl. Phys. Lett. 91(13), 132117 (2007).
[Crossref]

Kurtz, S. R.

O. D. Miller, E. Yablonovitch, and S. R. Kurtz, “Intense internal and external fluorescence as solar cells approach the Shockley-Queisser efficiency limit,” IEEE J. Photovoltaics 2, 303–311 (2012).
[Crossref]

Lang, J. R.

C. J. Neufeld, S. C. Cruz, R. M. Farrell, M. Iza, J. R. Lang, S. Keller, S. Nakamura, S. P. DenBaars, J. S. Speck, and U. K. Mishra, “Effect of doping and polarization on carrier collection in InGaN quantum well solar cells,” Appl. Phys. Lett. 98(24), 243507 (2011).
[Crossref]

Leung, M.

M. Leung, A. Djurisic, and E. Li, “Refractive index of ingan/gan quantum well,” J. Appl. Phys. 84(11), 6312–6317 (1998).
[Crossref]

Levy, M. Y.

S. P. Bremner, M. Y. Levy, and C. B. Honsberg, “Analysis of tandem solar cell efficiencies under AM1.5G spectrum using a rapid flux calculation method,” Prog. Photovolt. Res. Appl. 16(3), 225–233 (2008).
[Crossref]

Li, E.

M. Leung, A. Djurisic, and E. Li, “Refractive index of ingan/gan quantum well,” J. Appl. Phys. 84(11), 6312–6317 (1998).
[Crossref]

Li, L.

Lien, S.-Y.

S.-Y. Lien, D. Wuu, W. Yeh, and J. Liu, “Tri-layer antireflection coatings (SiO2/SiO2-TiO2/TiO2) for silicon solar cells using a sol-gel technique,” Sol. Energy Mater. Sol. Cells 90(16), 2710–2719 (2006).
[Crossref]

Lin, C. F.

Lin, L. J. H.

L. J. H. Lin and Y.-P. Chiou, “Improving thin-film crystalline silicon solar cell efficiency with back surface field layer and blaze diffractive grating,” Sol. Energy 86(5), 1485–1490 (2012).
[Crossref]

Liu, J.

S.-Y. Lien, D. Wuu, W. Yeh, and J. Liu, “Tri-layer antireflection coatings (SiO2/SiO2-TiO2/TiO2) for silicon solar cells using a sol-gel technique,” Sol. Energy Mater. Sol. Cells 90(16), 2710–2719 (2006).
[Crossref]

Matsushita, T.

S. Nakamura, M. Senoh, S. I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, “Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates,” Appl. Phys. Lett. 72(16), 2014–2016 (1998).
[Crossref]

Miller, O. D.

O. D. Miller, E. Yablonovitch, and S. R. Kurtz, “Intense internal and external fluorescence as solar cells approach the Shockley-Queisser efficiency limit,” IEEE J. Photovoltaics 2, 303–311 (2012).
[Crossref]

Mishra, U. K.

C. J. Neufeld, S. C. Cruz, R. M. Farrell, M. Iza, J. R. Lang, S. Keller, S. Nakamura, S. P. DenBaars, J. S. Speck, and U. K. Mishra, “Effect of doping and polarization on carrier collection in InGaN quantum well solar cells,” Appl. Phys. Lett. 98(24), 243507 (2011).
[Crossref]

C. J. Neufeld, N. G. Toledo, S. C. Cruz, M. Iza, S. P. DenBaars, and U. K. Mishra, “High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap,” Appl. Phys. Lett. 93(14), 143502 (2008).
[Crossref]

Moharam, M. G.

Nagahama, S. I.

S. Nakamura, M. Senoh, S. I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, “Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates,” Appl. Phys. Lett. 72(16), 2014–2016 (1998).
[Crossref]

S. Nakamura, M. Senoh, N. Iwasa, and S. I. Nagahama, “High power InGaN single quantum well structure blue and violet light emitting diodes,” Appl. Phys. Lett. 67(13), 1868–1870 (1995).
[Crossref]

Nakamura, S.

C. J. Neufeld, S. C. Cruz, R. M. Farrell, M. Iza, J. R. Lang, S. Keller, S. Nakamura, S. P. DenBaars, J. S. Speck, and U. K. Mishra, “Effect of doping and polarization on carrier collection in InGaN quantum well solar cells,” Appl. Phys. Lett. 98(24), 243507 (2011).
[Crossref]

S. Nakamura, M. Senoh, S. I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, “Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates,” Appl. Phys. Lett. 72(16), 2014–2016 (1998).
[Crossref]

S. Nakamura, M. Senoh, N. Iwasa, and S. I. Nagahama, “High power InGaN single quantum well structure blue and violet light emitting diodes,” Appl. Phys. Lett. 67(13), 1868–1870 (1995).
[Crossref]

Nawaz, M.

M. Nawaz and A. Ahmad, “A TCAD-based modeling of GaN/InGaN/Si solar cells,” Semicond. Sci. Technol. 27(3), 035019 (2012).
[Crossref]

Neufeld, C. J.

C. J. Neufeld, S. C. Cruz, R. M. Farrell, M. Iza, J. R. Lang, S. Keller, S. Nakamura, S. P. DenBaars, J. S. Speck, and U. K. Mishra, “Effect of doping and polarization on carrier collection in InGaN quantum well solar cells,” Appl. Phys. Lett. 98(24), 243507 (2011).
[Crossref]

C. J. Neufeld, N. G. Toledo, S. C. Cruz, M. Iza, S. P. DenBaars, and U. K. Mishra, “High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap,” Appl. Phys. Lett. 93(14), 143502 (2008).
[Crossref]

Reichertz, L. A.

L. A. Reichertz, I. Gherasoiu, K. M. Yu, V. M. Kao, W. Walukiewicz, and J. W. Ager, “Demonstration of a III–Nitride/Silicon Tandem Solar Cell,” Appl. Phys. Express 2(12), 122202 (2009).
[Crossref]

Sano, M.

S. Nakamura, M. Senoh, S. I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, “Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates,” Appl. Phys. Lett. 72(16), 2014–2016 (1998).
[Crossref]

Senoh, M.

S. Nakamura, M. Senoh, S. I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, “Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates,” Appl. Phys. Lett. 72(16), 2014–2016 (1998).
[Crossref]

S. Nakamura, M. Senoh, N. Iwasa, and S. I. Nagahama, “High power InGaN single quantum well structure blue and violet light emitting diodes,” Appl. Phys. Lett. 67(13), 1868–1870 (1995).
[Crossref]

Speck, J. S.

C. J. Neufeld, S. C. Cruz, R. M. Farrell, M. Iza, J. R. Lang, S. Keller, S. Nakamura, S. P. DenBaars, J. S. Speck, and U. K. Mishra, “Effect of doping and polarization on carrier collection in InGaN quantum well solar cells,” Appl. Phys. Lett. 98(24), 243507 (2011).
[Crossref]

Sugimoto, Y.

S. Nakamura, M. Senoh, S. I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, “Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates,” Appl. Phys. Lett. 72(16), 2014–2016 (1998).
[Crossref]

Toledo, N. G.

C. J. Neufeld, N. G. Toledo, S. C. Cruz, M. Iza, S. P. DenBaars, and U. K. Mishra, “High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap,” Appl. Phys. Lett. 93(14), 143502 (2008).
[Crossref]

Umemoto, H.

S. Nakamura, M. Senoh, S. I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, “Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates,” Appl. Phys. Lett. 72(16), 2014–2016 (1998).
[Crossref]

Walukiewicz, W.

G. F. Brown, J. W. Ager, W. Walukiewicz, and J. Wu, “Finite element simulations of compositionally graded InGaN solar cells,” Sol. Energy Mater. Sol. Cells 94(3), 478–483 (2010).
[Crossref]

L. A. Reichertz, I. Gherasoiu, K. M. Yu, V. M. Kao, W. Walukiewicz, and J. W. Ager, “Demonstration of a III–Nitride/Silicon Tandem Solar Cell,” Appl. Phys. Express 2(12), 122202 (2009).
[Crossref]

L. Hsu and W. Walukiewicz, “Modeling of InGaN/Si tandem solar cells,” J. Appl. Phys. 104(2), 024507 (2008).
[Crossref]

Wu, J.

G. F. Brown, J. W. Ager, W. Walukiewicz, and J. Wu, “Finite element simulations of compositionally graded InGaN solar cells,” Sol. Energy Mater. Sol. Cells 94(3), 478–483 (2010).
[Crossref]

Wuu, D.

S.-Y. Lien, D. Wuu, W. Yeh, and J. Liu, “Tri-layer antireflection coatings (SiO2/SiO2-TiO2/TiO2) for silicon solar cells using a sol-gel technique,” Sol. Energy Mater. Sol. Cells 90(16), 2710–2719 (2006).
[Crossref]

Yablonovitch, E.

O. D. Miller, E. Yablonovitch, and S. R. Kurtz, “Intense internal and external fluorescence as solar cells approach the Shockley-Queisser efficiency limit,” IEEE J. Photovoltaics 2, 303–311 (2012).
[Crossref]

Yamada, T.

S. Nakamura, M. Senoh, S. I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, “Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates,” Appl. Phys. Lett. 72(16), 2014–2016 (1998).
[Crossref]

Yeh, W.

S.-Y. Lien, D. Wuu, W. Yeh, and J. Liu, “Tri-layer antireflection coatings (SiO2/SiO2-TiO2/TiO2) for silicon solar cells using a sol-gel technique,” Sol. Energy Mater. Sol. Cells 90(16), 2710–2719 (2006).
[Crossref]

Yu, K. M.

L. A. Reichertz, I. Gherasoiu, K. M. Yu, V. M. Kao, W. Walukiewicz, and J. W. Ager, “Demonstration of a III–Nitride/Silicon Tandem Solar Cell,” Appl. Phys. Express 2(12), 122202 (2009).
[Crossref]

Appl. Phys. Express (1)

L. A. Reichertz, I. Gherasoiu, K. M. Yu, V. M. Kao, W. Walukiewicz, and J. W. Ager, “Demonstration of a III–Nitride/Silicon Tandem Solar Cell,” Appl. Phys. Express 2(12), 122202 (2009).
[Crossref]

Appl. Phys. Lett. (5)

S. Nakamura, M. Senoh, N. Iwasa, and S. I. Nagahama, “High power InGaN single quantum well structure blue and violet light emitting diodes,” Appl. Phys. Lett. 67(13), 1868–1870 (1995).
[Crossref]

S. Nakamura, M. Senoh, S. I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, “Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates,” Appl. Phys. Lett. 72(16), 2014–2016 (1998).
[Crossref]

O. Jani, I. Ferguson, C. Honsberg, and S. Kurtz, “Design and characterization of GaN/InGaN solar cells,” Appl. Phys. Lett. 91(13), 132117 (2007).
[Crossref]

C. J. Neufeld, S. C. Cruz, R. M. Farrell, M. Iza, J. R. Lang, S. Keller, S. Nakamura, S. P. DenBaars, J. S. Speck, and U. K. Mishra, “Effect of doping and polarization on carrier collection in InGaN quantum well solar cells,” Appl. Phys. Lett. 98(24), 243507 (2011).
[Crossref]

C. J. Neufeld, N. G. Toledo, S. C. Cruz, M. Iza, S. P. DenBaars, and U. K. Mishra, “High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap,” Appl. Phys. Lett. 93(14), 143502 (2008).
[Crossref]

IEEE J. Photovoltaics (1)

O. D. Miller, E. Yablonovitch, and S. R. Kurtz, “Intense internal and external fluorescence as solar cells approach the Shockley-Queisser efficiency limit,” IEEE J. Photovoltaics 2, 303–311 (2012).
[Crossref]

J. Appl. Phys. (3)

M. J. Bergmann and H. C. Casey, “Optical-field calculations for lossy multiple-layer AlxGa1-xN/InxGa1-xN laser diodes,” J. Appl. Phys. 84(3), 1196–1203 (1998).
[Crossref]

M. Leung, A. Djurisic, and E. Li, “Refractive index of ingan/gan quantum well,” J. Appl. Phys. 84(11), 6312–6317 (1998).
[Crossref]

L. Hsu and W. Walukiewicz, “Modeling of InGaN/Si tandem solar cells,” J. Appl. Phys. 104(2), 024507 (2008).
[Crossref]

J. Cryst. Growth (1)

D. Holec, P. M. F. J. Costa, M. J. Kappers, and C. J. Humphreys, “Critical thickness calculations for InGaN/GaN,” J. Cryst. Growth 303(1), 314–317 (2007).
[Crossref]

J. Opt. Soc. Am. (1)

J. Opt. Soc. Am. A (2)

Opt. Express (1)

Prog. Photovolt. Res. Appl. (2)

M. A. Green and M. J. Keevers, “Optical properties of intrinsic silicon at 300 K,” Prog. Photovolt. Res. Appl. 3(3), 189–192 (1995).
[Crossref]

S. P. Bremner, M. Y. Levy, and C. B. Honsberg, “Analysis of tandem solar cell efficiencies under AM1.5G spectrum using a rapid flux calculation method,” Prog. Photovolt. Res. Appl. 16(3), 225–233 (2008).
[Crossref]

Semicond. Sci. Technol. (1)

M. Nawaz and A. Ahmad, “A TCAD-based modeling of GaN/InGaN/Si solar cells,” Semicond. Sci. Technol. 27(3), 035019 (2012).
[Crossref]

Sol. Energy (1)

L. J. H. Lin and Y.-P. Chiou, “Improving thin-film crystalline silicon solar cell efficiency with back surface field layer and blaze diffractive grating,” Sol. Energy 86(5), 1485–1490 (2012).
[Crossref]

Sol. Energy Mater. Sol. Cells (2)

G. F. Brown, J. W. Ager, W. Walukiewicz, and J. Wu, “Finite element simulations of compositionally graded InGaN solar cells,” Sol. Energy Mater. Sol. Cells 94(3), 478–483 (2010).
[Crossref]

S.-Y. Lien, D. Wuu, W. Yeh, and J. Liu, “Tri-layer antireflection coatings (SiO2/SiO2-TiO2/TiO2) for silicon solar cells using a sol-gel technique,” Sol. Energy Mater. Sol. Cells 90(16), 2710–2719 (2006).
[Crossref]

Other (9)

J. L. Gray, A. Luque, and S. Hegedus, Handbook of Photovoltaic Science and Engineering, 2nd ed., (Wiley, West Sussex, UK, 2011).

ASTM, “Reference Solar Spectral Irradiance: Air Mass 1.5 Spectra,” http://rredc.nrel.gov/solar/spectra/ .

C. J. Neufeld, Design, Fabrication and Characterization of III-N Based Solar Cells, Dissertation, UCSB.

M. A. Green, Solar Cells: Operating Principles, Technology and System Applications (Prentice-Hall, Englewood Cliffs, New Jersey, 1982).

Filmetrics, Inc., “Refractive Index Database,” http://www.filmetrics.com/ .

M. Polyanskiy, “Refractive Index Database,” http://refractiveindex.info/ .

M. Levinstein, “Semiconductors on NSM,” http://www.ioffe.ru/SVA/NSM/Semicond/ .

S. Adachi, The Handbook on Optical Constants of Semiconductors (World Scientific Publishing, 2012).

S. Adachi, Optical Constants of Crystalline and Amorphous Semiconductors (Springer, 1999).

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Figures (4)

Fig. 1
Fig. 1 MQW GaN/InxGa1-xN/cSi dual-junction (DJ) tandem solar cell (SC).
Fig. 2
Fig. 2 (a) Reflection loss of a tri-layer ARC. (b) Contour plot of the weighted average reflectance Rave of a tri-layer ARC (c) Comparison of reflectance between a tri-layer ARC and a double-layer ARC. (d) Optical absorptance of MQW GaN/InxGa1-xN/cSi DJ tandem SC without diffraction grating.
Fig. 3
Fig. 3 (a) TM 1st order DE of TG. (b) Maximum short-circuit current minus reflection loss of MQW GaN/InxGa1-xN/cSi DJ tandem SC with diffraction grating. (c) Unpolarized optical absorptance.
Fig. 4
Fig. 4 Optical absorption of MQW GaN/InxGa1-xN/cSi DJ tandem SC with diffraction grating with varying (a) p-GaN thicknesses, or (b) Si thicknesses, or (c) total number of MQW pairs.

Equations (11)

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R ave = λ 1 λ 2 F( λ ) R( λ ) IQE( λ )dλ λ 1 λ 2 F( λ ) IQE( λ )dλ = λ 1 λ 2 F( λ ) R( λ )dλ λ 1 λ 2 F( λ )dλ .
G j = λ <hc/ E g [ 1R( λ )T( λ ) ] A j ( λ,α ) P( λ ) hc/λ dλ , where F( λ )= P( λ ) hc/λ ,
A j ( λ,α )=( 1exp[ α j ( λ ) x j ] )exp[ i<j α i ( λ ) x i ],
G 1 = 0 λ 1 [ 1R( λ ) ]( 1exp[ α 1 ( λ ) x 1 ] ) P( λ ) hc/λ dλ ,
G 2 = 0 λ 2 [ 1R( λ ) ]( 1exp[ α 2 ( λ ) x 2 ] )exp[ α 1 ( λ ) x 1 ] P( λ ) hc/λ dλ.
J s c = q h c λ 1 λ 2 λ E Q E ( λ ) P ( λ ) d λ ,
E Q E ( λ ) = [ 1 R ( λ ) T ( λ ) ] I Q E ( A ( λ , α ) , λ ) ,
J sc,ideal = q hc λ 1 λ 2 λP( λ )dλ .
J sc = q hc λ 1 λ 2 λEQE( λ )P( λ )dλ = q hc λ 1 λ 2 λ[ 1R( λ ) ]IQE( A( λ,α ),λ )P( λ )dλ = q hc λ 1 λ 2 λ[ 1R( λ ) ]P( λ )dλ = q hc λ 1 λ 2 λP( λ )dλ q hc λ 1 λ 2 λR( λ )P( λ )dλ = J sc,ideal Δ J sc, reflection loss .
n out sin( θ m )+ n inc sin( θ inc )= mλ d ,
m D E R,m,n +D E T,m,n =1 , n=TE or TM.

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