Abstract

We report on the demonstration of photodetectors based on large scale two-dimensional molybdenum disulfide (MoS2) transition metal dichalcogenides. Excellent film uniformity and precise control of the MoS2 thickness down to a monolayer (~0.75nm) were achieved by magnetron sputtering synthesis approach. In particular, the photodetectors integrated with five MoS2 monolayers exhibit a high photoresponsivity of 1.8 A/W, an external quantum efficiency exceeding 260%, and a photodetectivity of ~5 x 108 Jones for a wavelength of 850 nm, surpassing the performance of mechanically exfoliated based photodetectors.

© 2015 Optical Society of America

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2015 (2)

J. Jeon, S. K. Jang, S. M. Jeon, G. Yoo, Y. H. Jang, J.-H. Park, and S. Lee, “Layer-controlled CVD growth of large-area two-dimensional MoS2 films,” Nanoscale 7(5), 1688–1695 (2015).
[Crossref] [PubMed]

J. Tao, J. Chai, X. Lu, L. M. Wong, T. I. Wong, J. Pan, Q. Xiong, D. Chi, and S. Wang, “Growth of wafer-scale MoS2 monolayer by magnetron sputtering,” Nanoscale 7(6), 2497–2503 (2015).
[Crossref] [PubMed]

2014 (7)

S. H. Yu, Y. Lee, S. K. Jang, J. Kang, J. Jeon, C. Lee, J. Y. Lee, H. Kim, E. Hwang, S. Lee, and J. H. Cho, “Dye-sensitized MoS2 photodetector with enhanced spectral photoresponse,” ACS Nano 8(8), 8285–8291 (2014).
[Crossref] [PubMed]

L. Yang, X. Cui, J. Zhang, K. Wang, M. Shen, S. Zeng, S. A. Dayeh, L. Feng, and B. Xiang, “Lattice strain effects on the optical properties of MoS2 nanosheets,” Sci. Rep. 4, 5649 (2014).
[PubMed]

F. H. L. Koppens, T. Mueller, P. Avouris, A. C. Ferrari, M. S. Vitiello, and M. Polini, “Photodetectors based on graphene, other two-dimensional materials and hybrid systems,” Nat. Nanotechnol. 9(10), 780–793 (2014).
[Crossref] [PubMed]

W. Zhang, C.-P. Chuu, J.-K. Huang, C.-H. Chen, M.-L. Tsai, Y.-H. Chang, C.-T. Liang, Y.-Z. Chen, Y.-L. Chueh, J.-H. He, M.-Y. Chou, and L.-J. Li, “Ultrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS2 Heterostructures,” Sci. Rep. 4, 3826 (2014).
[PubMed]

F. Xia, H. Wang, D. Xiao, M. Dubey, and A. Ramasubramaniam, “Two-dimensional material nanophotonics,” Nat. Photonics 8(12), 899–907 (2014).
[Crossref]

R. Yang, Z. Wang, and P. X. L. Feng, “Electrical breakdown of multilayer MoS2 field-effect transistors with thickness-dependent mobility,” Nanoscale 6(21), 12383–12390 (2014).
[Crossref] [PubMed]

N. Perea-López, Z. Lin, N. R. Pradhan, A. Iñiguez-Rábago, A. L. Elías, A. McCreary, J. Lou, P. M. Ajayan, H. Terrones, L. Balicas, and M. Terrones, “CVD-grown monolayered MoS2 as an effective photosensor operating at low-voltage,” 2D Materials (Basel) 1(1), 011004 (2014).
[Crossref]

2013 (2)

D.-S. Tsai, K.-K. Liu, D.-H. Lien, M.-L. Tsai, C.-F. Kang, C.-A. Lin, L.-J. Li, and J.-H. He, “Few-Layer MoS2 with high broadband Photogain and fast optical switching for use in harsh environments,” ACS Nano 7(5), 3905–3911 (2013).
[Crossref] [PubMed]

O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, and A. Kis, “Ultrasensitive photodetectors based on monolayer MoS2,” Nat. Nanotechnol. 8(7), 497–501 (2013).
[Crossref] [PubMed]

2012 (7)

W. Choi, M. Y. Cho, A. Konar, J. H. Lee, G.-B. Cha, S. C. Hong, S. Kim, J. Kim, D. Jena, J. Joo, and S. Kim, “High-detectivity multilayer MoS2 phototransistors with spectral response from ultraviolet to infrared,” Adv. Mater. 24(43), 5832–5836 (2012).
[Crossref] [PubMed]

Y.-H. Lee, X.-Q. Zhang, W. Zhang, M.-T. Chang, C.-T. Lin, K.-D. Chang, Y.-C. Yu, J. T.-W. Wang, C.-S. Chang, L.-J. Li, and T.-W. Lin, “Synthesis of large-area MoS2 atomic layers with chemical vapor deposition,” Adv. Mater. 24(17), 2320–2325 (2012).
[Crossref] [PubMed]

Y. Zhan, Z. Liu, S. Najmaei, P. M. Ajayan, and J. Lou, “Large-Area Vapor-Phase Growth and Characterization of MoS2 Atomic Layers on a SiO2 Substrate,” Small 8(7), 966–971 (2012).
[Crossref] [PubMed]

K.-K. Liu, W. Zhang, Y.-H. Lee, Y.-C. Lin, M.-T. Chang, C.-Y. Su, C.-S. Chang, H. Li, Y. Shi, H. Zhang, C.-S. Lai, and L.-J. Li, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12(3), 1538–1544 (2012).
[Crossref] [PubMed]

H. S. Lee, S.-W. Min, Y.-G. Chang, M. K. Park, T. Nam, H. Kim, J. H. Kim, S. Ryu, and S. Im, “MoS₂ nanosheet phototransistors with thickness-modulated optical energy gap,” Nano Lett. 12(7), 3695–3700 (2012).
[Crossref] [PubMed]

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6(1), 74–80 (2012).
[Crossref] [PubMed]

Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7(11), 699–712 (2012).
[Crossref] [PubMed]

2011 (1)

G. Eda, H. Yamaguchi, D. Voiry, T. Fujita, M. Chen, and M. Chhowalla, “Photoluminescence from chemically exfoliated MoS2,” Nano Lett. 11(12), 5111–5116 (2011).
[Crossref] [PubMed]

2010 (1)

K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS₂: a new direct-gap semiconductor,” Phys. Rev. Lett. 105(13), 136805 (2010).
[Crossref] [PubMed]

2009 (2)

F. Xia, T. Mueller, Y. M. Lin, A. Valdes-Garcia, and P. Avouris, “Ultrafast graphene photodetector,” Nat. Nanotechnol. 4(12), 839–843 (2009).
[Crossref] [PubMed]

F. Xia, T. Mueller, R. Golizadeh-Mojarad, M. Freitag, Y. M. Lin, J. Tsang, V. Perebeinos, and P. Avouris, “Photocurrent imaging and efficient photon detection in a graphene transistor,” Nano Lett. 9(3), 1039–1044 (2009).
[Crossref] [PubMed]

2005 (1)

K. S. Novoselov, D. Jiang, F. Schedin, T. J. Booth, V. V. Khotkevich, S. V. Morozov, and A. K. Geim, “Two-dimensional atomic crystals,” Proc. Natl. Acad. Sci. U.S.A. 102(30), 10451–10453 (2005).
[Crossref] [PubMed]

Ajayan, P. M.

N. Perea-López, Z. Lin, N. R. Pradhan, A. Iñiguez-Rábago, A. L. Elías, A. McCreary, J. Lou, P. M. Ajayan, H. Terrones, L. Balicas, and M. Terrones, “CVD-grown monolayered MoS2 as an effective photosensor operating at low-voltage,” 2D Materials (Basel) 1(1), 011004 (2014).
[Crossref]

Y. Zhan, Z. Liu, S. Najmaei, P. M. Ajayan, and J. Lou, “Large-Area Vapor-Phase Growth and Characterization of MoS2 Atomic Layers on a SiO2 Substrate,” Small 8(7), 966–971 (2012).
[Crossref] [PubMed]

Avouris, P.

F. H. L. Koppens, T. Mueller, P. Avouris, A. C. Ferrari, M. S. Vitiello, and M. Polini, “Photodetectors based on graphene, other two-dimensional materials and hybrid systems,” Nat. Nanotechnol. 9(10), 780–793 (2014).
[Crossref] [PubMed]

F. Xia, T. Mueller, Y. M. Lin, A. Valdes-Garcia, and P. Avouris, “Ultrafast graphene photodetector,” Nat. Nanotechnol. 4(12), 839–843 (2009).
[Crossref] [PubMed]

F. Xia, T. Mueller, R. Golizadeh-Mojarad, M. Freitag, Y. M. Lin, J. Tsang, V. Perebeinos, and P. Avouris, “Photocurrent imaging and efficient photon detection in a graphene transistor,” Nano Lett. 9(3), 1039–1044 (2009).
[Crossref] [PubMed]

Balicas, L.

N. Perea-López, Z. Lin, N. R. Pradhan, A. Iñiguez-Rábago, A. L. Elías, A. McCreary, J. Lou, P. M. Ajayan, H. Terrones, L. Balicas, and M. Terrones, “CVD-grown monolayered MoS2 as an effective photosensor operating at low-voltage,” 2D Materials (Basel) 1(1), 011004 (2014).
[Crossref]

Booth, T. J.

K. S. Novoselov, D. Jiang, F. Schedin, T. J. Booth, V. V. Khotkevich, S. V. Morozov, and A. K. Geim, “Two-dimensional atomic crystals,” Proc. Natl. Acad. Sci. U.S.A. 102(30), 10451–10453 (2005).
[Crossref] [PubMed]

Cha, G.-B.

W. Choi, M. Y. Cho, A. Konar, J. H. Lee, G.-B. Cha, S. C. Hong, S. Kim, J. Kim, D. Jena, J. Joo, and S. Kim, “High-detectivity multilayer MoS2 phototransistors with spectral response from ultraviolet to infrared,” Adv. Mater. 24(43), 5832–5836 (2012).
[Crossref] [PubMed]

Chai, J.

J. Tao, J. Chai, X. Lu, L. M. Wong, T. I. Wong, J. Pan, Q. Xiong, D. Chi, and S. Wang, “Growth of wafer-scale MoS2 monolayer by magnetron sputtering,” Nanoscale 7(6), 2497–2503 (2015).
[Crossref] [PubMed]

Chang, C.-S.

Y.-H. Lee, X.-Q. Zhang, W. Zhang, M.-T. Chang, C.-T. Lin, K.-D. Chang, Y.-C. Yu, J. T.-W. Wang, C.-S. Chang, L.-J. Li, and T.-W. Lin, “Synthesis of large-area MoS2 atomic layers with chemical vapor deposition,” Adv. Mater. 24(17), 2320–2325 (2012).
[Crossref] [PubMed]

K.-K. Liu, W. Zhang, Y.-H. Lee, Y.-C. Lin, M.-T. Chang, C.-Y. Su, C.-S. Chang, H. Li, Y. Shi, H. Zhang, C.-S. Lai, and L.-J. Li, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12(3), 1538–1544 (2012).
[Crossref] [PubMed]

Chang, K.-D.

Y.-H. Lee, X.-Q. Zhang, W. Zhang, M.-T. Chang, C.-T. Lin, K.-D. Chang, Y.-C. Yu, J. T.-W. Wang, C.-S. Chang, L.-J. Li, and T.-W. Lin, “Synthesis of large-area MoS2 atomic layers with chemical vapor deposition,” Adv. Mater. 24(17), 2320–2325 (2012).
[Crossref] [PubMed]

Chang, M.-T.

Y.-H. Lee, X.-Q. Zhang, W. Zhang, M.-T. Chang, C.-T. Lin, K.-D. Chang, Y.-C. Yu, J. T.-W. Wang, C.-S. Chang, L.-J. Li, and T.-W. Lin, “Synthesis of large-area MoS2 atomic layers with chemical vapor deposition,” Adv. Mater. 24(17), 2320–2325 (2012).
[Crossref] [PubMed]

K.-K. Liu, W. Zhang, Y.-H. Lee, Y.-C. Lin, M.-T. Chang, C.-Y. Su, C.-S. Chang, H. Li, Y. Shi, H. Zhang, C.-S. Lai, and L.-J. Li, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12(3), 1538–1544 (2012).
[Crossref] [PubMed]

Chang, Y.-G.

H. S. Lee, S.-W. Min, Y.-G. Chang, M. K. Park, T. Nam, H. Kim, J. H. Kim, S. Ryu, and S. Im, “MoS₂ nanosheet phototransistors with thickness-modulated optical energy gap,” Nano Lett. 12(7), 3695–3700 (2012).
[Crossref] [PubMed]

Chang, Y.-H.

W. Zhang, C.-P. Chuu, J.-K. Huang, C.-H. Chen, M.-L. Tsai, Y.-H. Chang, C.-T. Liang, Y.-Z. Chen, Y.-L. Chueh, J.-H. He, M.-Y. Chou, and L.-J. Li, “Ultrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS2 Heterostructures,” Sci. Rep. 4, 3826 (2014).
[PubMed]

Chen, C.-H.

W. Zhang, C.-P. Chuu, J.-K. Huang, C.-H. Chen, M.-L. Tsai, Y.-H. Chang, C.-T. Liang, Y.-Z. Chen, Y.-L. Chueh, J.-H. He, M.-Y. Chou, and L.-J. Li, “Ultrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS2 Heterostructures,” Sci. Rep. 4, 3826 (2014).
[PubMed]

Chen, M.

G. Eda, H. Yamaguchi, D. Voiry, T. Fujita, M. Chen, and M. Chhowalla, “Photoluminescence from chemically exfoliated MoS2,” Nano Lett. 11(12), 5111–5116 (2011).
[Crossref] [PubMed]

Chen, X.

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6(1), 74–80 (2012).
[Crossref] [PubMed]

Chen, Y.-Z.

W. Zhang, C.-P. Chuu, J.-K. Huang, C.-H. Chen, M.-L. Tsai, Y.-H. Chang, C.-T. Liang, Y.-Z. Chen, Y.-L. Chueh, J.-H. He, M.-Y. Chou, and L.-J. Li, “Ultrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS2 Heterostructures,” Sci. Rep. 4, 3826 (2014).
[PubMed]

Chhowalla, M.

G. Eda, H. Yamaguchi, D. Voiry, T. Fujita, M. Chen, and M. Chhowalla, “Photoluminescence from chemically exfoliated MoS2,” Nano Lett. 11(12), 5111–5116 (2011).
[Crossref] [PubMed]

Chi, D.

J. Tao, J. Chai, X. Lu, L. M. Wong, T. I. Wong, J. Pan, Q. Xiong, D. Chi, and S. Wang, “Growth of wafer-scale MoS2 monolayer by magnetron sputtering,” Nanoscale 7(6), 2497–2503 (2015).
[Crossref] [PubMed]

Cho, J. H.

S. H. Yu, Y. Lee, S. K. Jang, J. Kang, J. Jeon, C. Lee, J. Y. Lee, H. Kim, E. Hwang, S. Lee, and J. H. Cho, “Dye-sensitized MoS2 photodetector with enhanced spectral photoresponse,” ACS Nano 8(8), 8285–8291 (2014).
[Crossref] [PubMed]

Cho, M. Y.

W. Choi, M. Y. Cho, A. Konar, J. H. Lee, G.-B. Cha, S. C. Hong, S. Kim, J. Kim, D. Jena, J. Joo, and S. Kim, “High-detectivity multilayer MoS2 phototransistors with spectral response from ultraviolet to infrared,” Adv. Mater. 24(43), 5832–5836 (2012).
[Crossref] [PubMed]

Choi, W.

W. Choi, M. Y. Cho, A. Konar, J. H. Lee, G.-B. Cha, S. C. Hong, S. Kim, J. Kim, D. Jena, J. Joo, and S. Kim, “High-detectivity multilayer MoS2 phototransistors with spectral response from ultraviolet to infrared,” Adv. Mater. 24(43), 5832–5836 (2012).
[Crossref] [PubMed]

Chou, M.-Y.

W. Zhang, C.-P. Chuu, J.-K. Huang, C.-H. Chen, M.-L. Tsai, Y.-H. Chang, C.-T. Liang, Y.-Z. Chen, Y.-L. Chueh, J.-H. He, M.-Y. Chou, and L.-J. Li, “Ultrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS2 Heterostructures,” Sci. Rep. 4, 3826 (2014).
[PubMed]

Chueh, Y.-L.

W. Zhang, C.-P. Chuu, J.-K. Huang, C.-H. Chen, M.-L. Tsai, Y.-H. Chang, C.-T. Liang, Y.-Z. Chen, Y.-L. Chueh, J.-H. He, M.-Y. Chou, and L.-J. Li, “Ultrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS2 Heterostructures,” Sci. Rep. 4, 3826 (2014).
[PubMed]

Chuu, C.-P.

W. Zhang, C.-P. Chuu, J.-K. Huang, C.-H. Chen, M.-L. Tsai, Y.-H. Chang, C.-T. Liang, Y.-Z. Chen, Y.-L. Chueh, J.-H. He, M.-Y. Chou, and L.-J. Li, “Ultrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS2 Heterostructures,” Sci. Rep. 4, 3826 (2014).
[PubMed]

Coleman, J. N.

Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7(11), 699–712 (2012).
[Crossref] [PubMed]

Cui, X.

L. Yang, X. Cui, J. Zhang, K. Wang, M. Shen, S. Zeng, S. A. Dayeh, L. Feng, and B. Xiang, “Lattice strain effects on the optical properties of MoS2 nanosheets,” Sci. Rep. 4, 5649 (2014).
[PubMed]

Dayeh, S. A.

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N. Perea-López, Z. Lin, N. R. Pradhan, A. Iñiguez-Rábago, A. L. Elías, A. McCreary, J. Lou, P. M. Ajayan, H. Terrones, L. Balicas, and M. Terrones, “CVD-grown monolayered MoS2 as an effective photosensor operating at low-voltage,” 2D Materials (Basel) 1(1), 011004 (2014).
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L. Yang, X. Cui, J. Zhang, K. Wang, M. Shen, S. Zeng, S. A. Dayeh, L. Feng, and B. Xiang, “Lattice strain effects on the optical properties of MoS2 nanosheets,” Sci. Rep. 4, 5649 (2014).
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Feng, P. X. L.

R. Yang, Z. Wang, and P. X. L. Feng, “Electrical breakdown of multilayer MoS2 field-effect transistors with thickness-dependent mobility,” Nanoscale 6(21), 12383–12390 (2014).
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F. Xia, T. Mueller, R. Golizadeh-Mojarad, M. Freitag, Y. M. Lin, J. Tsang, V. Perebeinos, and P. Avouris, “Photocurrent imaging and efficient photon detection in a graphene transistor,” Nano Lett. 9(3), 1039–1044 (2009).
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G. Eda, H. Yamaguchi, D. Voiry, T. Fujita, M. Chen, and M. Chhowalla, “Photoluminescence from chemically exfoliated MoS2,” Nano Lett. 11(12), 5111–5116 (2011).
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K. S. Novoselov, D. Jiang, F. Schedin, T. J. Booth, V. V. Khotkevich, S. V. Morozov, and A. K. Geim, “Two-dimensional atomic crystals,” Proc. Natl. Acad. Sci. U.S.A. 102(30), 10451–10453 (2005).
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Golizadeh-Mojarad, R.

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He, J.-H.

W. Zhang, C.-P. Chuu, J.-K. Huang, C.-H. Chen, M.-L. Tsai, Y.-H. Chang, C.-T. Liang, Y.-Z. Chen, Y.-L. Chueh, J.-H. He, M.-Y. Chou, and L.-J. Li, “Ultrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS2 Heterostructures,” Sci. Rep. 4, 3826 (2014).
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D.-S. Tsai, K.-K. Liu, D.-H. Lien, M.-L. Tsai, C.-F. Kang, C.-A. Lin, L.-J. Li, and J.-H. He, “Few-Layer MoS2 with high broadband Photogain and fast optical switching for use in harsh environments,” ACS Nano 7(5), 3905–3911 (2013).
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K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS₂: a new direct-gap semiconductor,” Phys. Rev. Lett. 105(13), 136805 (2010).
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K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS₂: a new direct-gap semiconductor,” Phys. Rev. Lett. 105(13), 136805 (2010).
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W. Choi, M. Y. Cho, A. Konar, J. H. Lee, G.-B. Cha, S. C. Hong, S. Kim, J. Kim, D. Jena, J. Joo, and S. Kim, “High-detectivity multilayer MoS2 phototransistors with spectral response from ultraviolet to infrared,” Adv. Mater. 24(43), 5832–5836 (2012).
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Huang, J.-K.

W. Zhang, C.-P. Chuu, J.-K. Huang, C.-H. Chen, M.-L. Tsai, Y.-H. Chang, C.-T. Liang, Y.-Z. Chen, Y.-L. Chueh, J.-H. He, M.-Y. Chou, and L.-J. Li, “Ultrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS2 Heterostructures,” Sci. Rep. 4, 3826 (2014).
[PubMed]

Hwang, E.

S. H. Yu, Y. Lee, S. K. Jang, J. Kang, J. Jeon, C. Lee, J. Y. Lee, H. Kim, E. Hwang, S. Lee, and J. H. Cho, “Dye-sensitized MoS2 photodetector with enhanced spectral photoresponse,” ACS Nano 8(8), 8285–8291 (2014).
[Crossref] [PubMed]

Im, S.

H. S. Lee, S.-W. Min, Y.-G. Chang, M. K. Park, T. Nam, H. Kim, J. H. Kim, S. Ryu, and S. Im, “MoS₂ nanosheet phototransistors with thickness-modulated optical energy gap,” Nano Lett. 12(7), 3695–3700 (2012).
[Crossref] [PubMed]

Iñiguez-Rábago, A.

N. Perea-López, Z. Lin, N. R. Pradhan, A. Iñiguez-Rábago, A. L. Elías, A. McCreary, J. Lou, P. M. Ajayan, H. Terrones, L. Balicas, and M. Terrones, “CVD-grown monolayered MoS2 as an effective photosensor operating at low-voltage,” 2D Materials (Basel) 1(1), 011004 (2014).
[Crossref]

Jang, S. K.

J. Jeon, S. K. Jang, S. M. Jeon, G. Yoo, Y. H. Jang, J.-H. Park, and S. Lee, “Layer-controlled CVD growth of large-area two-dimensional MoS2 films,” Nanoscale 7(5), 1688–1695 (2015).
[Crossref] [PubMed]

S. H. Yu, Y. Lee, S. K. Jang, J. Kang, J. Jeon, C. Lee, J. Y. Lee, H. Kim, E. Hwang, S. Lee, and J. H. Cho, “Dye-sensitized MoS2 photodetector with enhanced spectral photoresponse,” ACS Nano 8(8), 8285–8291 (2014).
[Crossref] [PubMed]

Jang, Y. H.

J. Jeon, S. K. Jang, S. M. Jeon, G. Yoo, Y. H. Jang, J.-H. Park, and S. Lee, “Layer-controlled CVD growth of large-area two-dimensional MoS2 films,” Nanoscale 7(5), 1688–1695 (2015).
[Crossref] [PubMed]

Jena, D.

W. Choi, M. Y. Cho, A. Konar, J. H. Lee, G.-B. Cha, S. C. Hong, S. Kim, J. Kim, D. Jena, J. Joo, and S. Kim, “High-detectivity multilayer MoS2 phototransistors with spectral response from ultraviolet to infrared,” Adv. Mater. 24(43), 5832–5836 (2012).
[Crossref] [PubMed]

Jeon, J.

J. Jeon, S. K. Jang, S. M. Jeon, G. Yoo, Y. H. Jang, J.-H. Park, and S. Lee, “Layer-controlled CVD growth of large-area two-dimensional MoS2 films,” Nanoscale 7(5), 1688–1695 (2015).
[Crossref] [PubMed]

S. H. Yu, Y. Lee, S. K. Jang, J. Kang, J. Jeon, C. Lee, J. Y. Lee, H. Kim, E. Hwang, S. Lee, and J. H. Cho, “Dye-sensitized MoS2 photodetector with enhanced spectral photoresponse,” ACS Nano 8(8), 8285–8291 (2014).
[Crossref] [PubMed]

Jeon, S. M.

J. Jeon, S. K. Jang, S. M. Jeon, G. Yoo, Y. H. Jang, J.-H. Park, and S. Lee, “Layer-controlled CVD growth of large-area two-dimensional MoS2 films,” Nanoscale 7(5), 1688–1695 (2015).
[Crossref] [PubMed]

Jiang, D.

K. S. Novoselov, D. Jiang, F. Schedin, T. J. Booth, V. V. Khotkevich, S. V. Morozov, and A. K. Geim, “Two-dimensional atomic crystals,” Proc. Natl. Acad. Sci. U.S.A. 102(30), 10451–10453 (2005).
[Crossref] [PubMed]

Jiang, L.

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6(1), 74–80 (2012).
[Crossref] [PubMed]

Joo, J.

W. Choi, M. Y. Cho, A. Konar, J. H. Lee, G.-B. Cha, S. C. Hong, S. Kim, J. Kim, D. Jena, J. Joo, and S. Kim, “High-detectivity multilayer MoS2 phototransistors with spectral response from ultraviolet to infrared,” Adv. Mater. 24(43), 5832–5836 (2012).
[Crossref] [PubMed]

Kalantar-Zadeh, K.

Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7(11), 699–712 (2012).
[Crossref] [PubMed]

Kang, C.-F.

D.-S. Tsai, K.-K. Liu, D.-H. Lien, M.-L. Tsai, C.-F. Kang, C.-A. Lin, L.-J. Li, and J.-H. He, “Few-Layer MoS2 with high broadband Photogain and fast optical switching for use in harsh environments,” ACS Nano 7(5), 3905–3911 (2013).
[Crossref] [PubMed]

Kang, J.

S. H. Yu, Y. Lee, S. K. Jang, J. Kang, J. Jeon, C. Lee, J. Y. Lee, H. Kim, E. Hwang, S. Lee, and J. H. Cho, “Dye-sensitized MoS2 photodetector with enhanced spectral photoresponse,” ACS Nano 8(8), 8285–8291 (2014).
[Crossref] [PubMed]

Kayci, M.

O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, and A. Kis, “Ultrasensitive photodetectors based on monolayer MoS2,” Nat. Nanotechnol. 8(7), 497–501 (2013).
[Crossref] [PubMed]

Khotkevich, V. V.

K. S. Novoselov, D. Jiang, F. Schedin, T. J. Booth, V. V. Khotkevich, S. V. Morozov, and A. K. Geim, “Two-dimensional atomic crystals,” Proc. Natl. Acad. Sci. U.S.A. 102(30), 10451–10453 (2005).
[Crossref] [PubMed]

Kim, H.

S. H. Yu, Y. Lee, S. K. Jang, J. Kang, J. Jeon, C. Lee, J. Y. Lee, H. Kim, E. Hwang, S. Lee, and J. H. Cho, “Dye-sensitized MoS2 photodetector with enhanced spectral photoresponse,” ACS Nano 8(8), 8285–8291 (2014).
[Crossref] [PubMed]

H. S. Lee, S.-W. Min, Y.-G. Chang, M. K. Park, T. Nam, H. Kim, J. H. Kim, S. Ryu, and S. Im, “MoS₂ nanosheet phototransistors with thickness-modulated optical energy gap,” Nano Lett. 12(7), 3695–3700 (2012).
[Crossref] [PubMed]

Kim, J.

W. Choi, M. Y. Cho, A. Konar, J. H. Lee, G.-B. Cha, S. C. Hong, S. Kim, J. Kim, D. Jena, J. Joo, and S. Kim, “High-detectivity multilayer MoS2 phototransistors with spectral response from ultraviolet to infrared,” Adv. Mater. 24(43), 5832–5836 (2012).
[Crossref] [PubMed]

Kim, J. H.

H. S. Lee, S.-W. Min, Y.-G. Chang, M. K. Park, T. Nam, H. Kim, J. H. Kim, S. Ryu, and S. Im, “MoS₂ nanosheet phototransistors with thickness-modulated optical energy gap,” Nano Lett. 12(7), 3695–3700 (2012).
[Crossref] [PubMed]

Kim, S.

W. Choi, M. Y. Cho, A. Konar, J. H. Lee, G.-B. Cha, S. C. Hong, S. Kim, J. Kim, D. Jena, J. Joo, and S. Kim, “High-detectivity multilayer MoS2 phototransistors with spectral response from ultraviolet to infrared,” Adv. Mater. 24(43), 5832–5836 (2012).
[Crossref] [PubMed]

W. Choi, M. Y. Cho, A. Konar, J. H. Lee, G.-B. Cha, S. C. Hong, S. Kim, J. Kim, D. Jena, J. Joo, and S. Kim, “High-detectivity multilayer MoS2 phototransistors with spectral response from ultraviolet to infrared,” Adv. Mater. 24(43), 5832–5836 (2012).
[Crossref] [PubMed]

Kis, A.

O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, and A. Kis, “Ultrasensitive photodetectors based on monolayer MoS2,” Nat. Nanotechnol. 8(7), 497–501 (2013).
[Crossref] [PubMed]

Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7(11), 699–712 (2012).
[Crossref] [PubMed]

Konar, A.

W. Choi, M. Y. Cho, A. Konar, J. H. Lee, G.-B. Cha, S. C. Hong, S. Kim, J. Kim, D. Jena, J. Joo, and S. Kim, “High-detectivity multilayer MoS2 phototransistors with spectral response from ultraviolet to infrared,” Adv. Mater. 24(43), 5832–5836 (2012).
[Crossref] [PubMed]

Koppens, F. H. L.

F. H. L. Koppens, T. Mueller, P. Avouris, A. C. Ferrari, M. S. Vitiello, and M. Polini, “Photodetectors based on graphene, other two-dimensional materials and hybrid systems,” Nat. Nanotechnol. 9(10), 780–793 (2014).
[Crossref] [PubMed]

Lai, C.-S.

K.-K. Liu, W. Zhang, Y.-H. Lee, Y.-C. Lin, M.-T. Chang, C.-Y. Su, C.-S. Chang, H. Li, Y. Shi, H. Zhang, C.-S. Lai, and L.-J. Li, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12(3), 1538–1544 (2012).
[Crossref] [PubMed]

Lee, C.

S. H. Yu, Y. Lee, S. K. Jang, J. Kang, J. Jeon, C. Lee, J. Y. Lee, H. Kim, E. Hwang, S. Lee, and J. H. Cho, “Dye-sensitized MoS2 photodetector with enhanced spectral photoresponse,” ACS Nano 8(8), 8285–8291 (2014).
[Crossref] [PubMed]

K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS₂: a new direct-gap semiconductor,” Phys. Rev. Lett. 105(13), 136805 (2010).
[Crossref] [PubMed]

Lee, H. S.

H. S. Lee, S.-W. Min, Y.-G. Chang, M. K. Park, T. Nam, H. Kim, J. H. Kim, S. Ryu, and S. Im, “MoS₂ nanosheet phototransistors with thickness-modulated optical energy gap,” Nano Lett. 12(7), 3695–3700 (2012).
[Crossref] [PubMed]

Lee, J. H.

W. Choi, M. Y. Cho, A. Konar, J. H. Lee, G.-B. Cha, S. C. Hong, S. Kim, J. Kim, D. Jena, J. Joo, and S. Kim, “High-detectivity multilayer MoS2 phototransistors with spectral response from ultraviolet to infrared,” Adv. Mater. 24(43), 5832–5836 (2012).
[Crossref] [PubMed]

Lee, J. Y.

S. H. Yu, Y. Lee, S. K. Jang, J. Kang, J. Jeon, C. Lee, J. Y. Lee, H. Kim, E. Hwang, S. Lee, and J. H. Cho, “Dye-sensitized MoS2 photodetector with enhanced spectral photoresponse,” ACS Nano 8(8), 8285–8291 (2014).
[Crossref] [PubMed]

Lee, S.

J. Jeon, S. K. Jang, S. M. Jeon, G. Yoo, Y. H. Jang, J.-H. Park, and S. Lee, “Layer-controlled CVD growth of large-area two-dimensional MoS2 films,” Nanoscale 7(5), 1688–1695 (2015).
[Crossref] [PubMed]

S. H. Yu, Y. Lee, S. K. Jang, J. Kang, J. Jeon, C. Lee, J. Y. Lee, H. Kim, E. Hwang, S. Lee, and J. H. Cho, “Dye-sensitized MoS2 photodetector with enhanced spectral photoresponse,” ACS Nano 8(8), 8285–8291 (2014).
[Crossref] [PubMed]

Lee, Y.

S. H. Yu, Y. Lee, S. K. Jang, J. Kang, J. Jeon, C. Lee, J. Y. Lee, H. Kim, E. Hwang, S. Lee, and J. H. Cho, “Dye-sensitized MoS2 photodetector with enhanced spectral photoresponse,” ACS Nano 8(8), 8285–8291 (2014).
[Crossref] [PubMed]

Lee, Y.-H.

Y.-H. Lee, X.-Q. Zhang, W. Zhang, M.-T. Chang, C.-T. Lin, K.-D. Chang, Y.-C. Yu, J. T.-W. Wang, C.-S. Chang, L.-J. Li, and T.-W. Lin, “Synthesis of large-area MoS2 atomic layers with chemical vapor deposition,” Adv. Mater. 24(17), 2320–2325 (2012).
[Crossref] [PubMed]

K.-K. Liu, W. Zhang, Y.-H. Lee, Y.-C. Lin, M.-T. Chang, C.-Y. Su, C.-S. Chang, H. Li, Y. Shi, H. Zhang, C.-S. Lai, and L.-J. Li, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12(3), 1538–1544 (2012).
[Crossref] [PubMed]

Lembke, D.

O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, and A. Kis, “Ultrasensitive photodetectors based on monolayer MoS2,” Nat. Nanotechnol. 8(7), 497–501 (2013).
[Crossref] [PubMed]

Li, H.

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6(1), 74–80 (2012).
[Crossref] [PubMed]

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6(1), 74–80 (2012).
[Crossref] [PubMed]

K.-K. Liu, W. Zhang, Y.-H. Lee, Y.-C. Lin, M.-T. Chang, C.-Y. Su, C.-S. Chang, H. Li, Y. Shi, H. Zhang, C.-S. Lai, and L.-J. Li, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12(3), 1538–1544 (2012).
[Crossref] [PubMed]

Li, L.-J.

W. Zhang, C.-P. Chuu, J.-K. Huang, C.-H. Chen, M.-L. Tsai, Y.-H. Chang, C.-T. Liang, Y.-Z. Chen, Y.-L. Chueh, J.-H. He, M.-Y. Chou, and L.-J. Li, “Ultrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS2 Heterostructures,” Sci. Rep. 4, 3826 (2014).
[PubMed]

D.-S. Tsai, K.-K. Liu, D.-H. Lien, M.-L. Tsai, C.-F. Kang, C.-A. Lin, L.-J. Li, and J.-H. He, “Few-Layer MoS2 with high broadband Photogain and fast optical switching for use in harsh environments,” ACS Nano 7(5), 3905–3911 (2013).
[Crossref] [PubMed]

K.-K. Liu, W. Zhang, Y.-H. Lee, Y.-C. Lin, M.-T. Chang, C.-Y. Su, C.-S. Chang, H. Li, Y. Shi, H. Zhang, C.-S. Lai, and L.-J. Li, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12(3), 1538–1544 (2012).
[Crossref] [PubMed]

Y.-H. Lee, X.-Q. Zhang, W. Zhang, M.-T. Chang, C.-T. Lin, K.-D. Chang, Y.-C. Yu, J. T.-W. Wang, C.-S. Chang, L.-J. Li, and T.-W. Lin, “Synthesis of large-area MoS2 atomic layers with chemical vapor deposition,” Adv. Mater. 24(17), 2320–2325 (2012).
[Crossref] [PubMed]

Liang, C.-T.

W. Zhang, C.-P. Chuu, J.-K. Huang, C.-H. Chen, M.-L. Tsai, Y.-H. Chang, C.-T. Liang, Y.-Z. Chen, Y.-L. Chueh, J.-H. He, M.-Y. Chou, and L.-J. Li, “Ultrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS2 Heterostructures,” Sci. Rep. 4, 3826 (2014).
[PubMed]

Lien, D.-H.

D.-S. Tsai, K.-K. Liu, D.-H. Lien, M.-L. Tsai, C.-F. Kang, C.-A. Lin, L.-J. Li, and J.-H. He, “Few-Layer MoS2 with high broadband Photogain and fast optical switching for use in harsh environments,” ACS Nano 7(5), 3905–3911 (2013).
[Crossref] [PubMed]

Lin, C.-A.

D.-S. Tsai, K.-K. Liu, D.-H. Lien, M.-L. Tsai, C.-F. Kang, C.-A. Lin, L.-J. Li, and J.-H. He, “Few-Layer MoS2 with high broadband Photogain and fast optical switching for use in harsh environments,” ACS Nano 7(5), 3905–3911 (2013).
[Crossref] [PubMed]

Lin, C.-T.

Y.-H. Lee, X.-Q. Zhang, W. Zhang, M.-T. Chang, C.-T. Lin, K.-D. Chang, Y.-C. Yu, J. T.-W. Wang, C.-S. Chang, L.-J. Li, and T.-W. Lin, “Synthesis of large-area MoS2 atomic layers with chemical vapor deposition,” Adv. Mater. 24(17), 2320–2325 (2012).
[Crossref] [PubMed]

Lin, T.-W.

Y.-H. Lee, X.-Q. Zhang, W. Zhang, M.-T. Chang, C.-T. Lin, K.-D. Chang, Y.-C. Yu, J. T.-W. Wang, C.-S. Chang, L.-J. Li, and T.-W. Lin, “Synthesis of large-area MoS2 atomic layers with chemical vapor deposition,” Adv. Mater. 24(17), 2320–2325 (2012).
[Crossref] [PubMed]

Lin, Y. M.

F. Xia, T. Mueller, Y. M. Lin, A. Valdes-Garcia, and P. Avouris, “Ultrafast graphene photodetector,” Nat. Nanotechnol. 4(12), 839–843 (2009).
[Crossref] [PubMed]

F. Xia, T. Mueller, R. Golizadeh-Mojarad, M. Freitag, Y. M. Lin, J. Tsang, V. Perebeinos, and P. Avouris, “Photocurrent imaging and efficient photon detection in a graphene transistor,” Nano Lett. 9(3), 1039–1044 (2009).
[Crossref] [PubMed]

Lin, Y.-C.

K.-K. Liu, W. Zhang, Y.-H. Lee, Y.-C. Lin, M.-T. Chang, C.-Y. Su, C.-S. Chang, H. Li, Y. Shi, H. Zhang, C.-S. Lai, and L.-J. Li, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12(3), 1538–1544 (2012).
[Crossref] [PubMed]

Lin, Z.

N. Perea-López, Z. Lin, N. R. Pradhan, A. Iñiguez-Rábago, A. L. Elías, A. McCreary, J. Lou, P. M. Ajayan, H. Terrones, L. Balicas, and M. Terrones, “CVD-grown monolayered MoS2 as an effective photosensor operating at low-voltage,” 2D Materials (Basel) 1(1), 011004 (2014).
[Crossref]

Liu, K.-K.

D.-S. Tsai, K.-K. Liu, D.-H. Lien, M.-L. Tsai, C.-F. Kang, C.-A. Lin, L.-J. Li, and J.-H. He, “Few-Layer MoS2 with high broadband Photogain and fast optical switching for use in harsh environments,” ACS Nano 7(5), 3905–3911 (2013).
[Crossref] [PubMed]

K.-K. Liu, W. Zhang, Y.-H. Lee, Y.-C. Lin, M.-T. Chang, C.-Y. Su, C.-S. Chang, H. Li, Y. Shi, H. Zhang, C.-S. Lai, and L.-J. Li, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12(3), 1538–1544 (2012).
[Crossref] [PubMed]

Liu, Z.

Y. Zhan, Z. Liu, S. Najmaei, P. M. Ajayan, and J. Lou, “Large-Area Vapor-Phase Growth and Characterization of MoS2 Atomic Layers on a SiO2 Substrate,” Small 8(7), 966–971 (2012).
[Crossref] [PubMed]

Lopez-Sanchez, O.

O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, and A. Kis, “Ultrasensitive photodetectors based on monolayer MoS2,” Nat. Nanotechnol. 8(7), 497–501 (2013).
[Crossref] [PubMed]

Lou, J.

N. Perea-López, Z. Lin, N. R. Pradhan, A. Iñiguez-Rábago, A. L. Elías, A. McCreary, J. Lou, P. M. Ajayan, H. Terrones, L. Balicas, and M. Terrones, “CVD-grown monolayered MoS2 as an effective photosensor operating at low-voltage,” 2D Materials (Basel) 1(1), 011004 (2014).
[Crossref]

Y. Zhan, Z. Liu, S. Najmaei, P. M. Ajayan, and J. Lou, “Large-Area Vapor-Phase Growth and Characterization of MoS2 Atomic Layers on a SiO2 Substrate,” Small 8(7), 966–971 (2012).
[Crossref] [PubMed]

Lu, G.

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6(1), 74–80 (2012).
[Crossref] [PubMed]

Lu, X.

J. Tao, J. Chai, X. Lu, L. M. Wong, T. I. Wong, J. Pan, Q. Xiong, D. Chi, and S. Wang, “Growth of wafer-scale MoS2 monolayer by magnetron sputtering,” Nanoscale 7(6), 2497–2503 (2015).
[Crossref] [PubMed]

Mak, K. F.

K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS₂: a new direct-gap semiconductor,” Phys. Rev. Lett. 105(13), 136805 (2010).
[Crossref] [PubMed]

McCreary, A.

N. Perea-López, Z. Lin, N. R. Pradhan, A. Iñiguez-Rábago, A. L. Elías, A. McCreary, J. Lou, P. M. Ajayan, H. Terrones, L. Balicas, and M. Terrones, “CVD-grown monolayered MoS2 as an effective photosensor operating at low-voltage,” 2D Materials (Basel) 1(1), 011004 (2014).
[Crossref]

Min, S.-W.

H. S. Lee, S.-W. Min, Y.-G. Chang, M. K. Park, T. Nam, H. Kim, J. H. Kim, S. Ryu, and S. Im, “MoS₂ nanosheet phototransistors with thickness-modulated optical energy gap,” Nano Lett. 12(7), 3695–3700 (2012).
[Crossref] [PubMed]

Morozov, S. V.

K. S. Novoselov, D. Jiang, F. Schedin, T. J. Booth, V. V. Khotkevich, S. V. Morozov, and A. K. Geim, “Two-dimensional atomic crystals,” Proc. Natl. Acad. Sci. U.S.A. 102(30), 10451–10453 (2005).
[Crossref] [PubMed]

Mueller, T.

F. H. L. Koppens, T. Mueller, P. Avouris, A. C. Ferrari, M. S. Vitiello, and M. Polini, “Photodetectors based on graphene, other two-dimensional materials and hybrid systems,” Nat. Nanotechnol. 9(10), 780–793 (2014).
[Crossref] [PubMed]

F. Xia, T. Mueller, R. Golizadeh-Mojarad, M. Freitag, Y. M. Lin, J. Tsang, V. Perebeinos, and P. Avouris, “Photocurrent imaging and efficient photon detection in a graphene transistor,” Nano Lett. 9(3), 1039–1044 (2009).
[Crossref] [PubMed]

F. Xia, T. Mueller, Y. M. Lin, A. Valdes-Garcia, and P. Avouris, “Ultrafast graphene photodetector,” Nat. Nanotechnol. 4(12), 839–843 (2009).
[Crossref] [PubMed]

Najmaei, S.

Y. Zhan, Z. Liu, S. Najmaei, P. M. Ajayan, and J. Lou, “Large-Area Vapor-Phase Growth and Characterization of MoS2 Atomic Layers on a SiO2 Substrate,” Small 8(7), 966–971 (2012).
[Crossref] [PubMed]

Nam, T.

H. S. Lee, S.-W. Min, Y.-G. Chang, M. K. Park, T. Nam, H. Kim, J. H. Kim, S. Ryu, and S. Im, “MoS₂ nanosheet phototransistors with thickness-modulated optical energy gap,” Nano Lett. 12(7), 3695–3700 (2012).
[Crossref] [PubMed]

Novoselov, K. S.

K. S. Novoselov, D. Jiang, F. Schedin, T. J. Booth, V. V. Khotkevich, S. V. Morozov, and A. K. Geim, “Two-dimensional atomic crystals,” Proc. Natl. Acad. Sci. U.S.A. 102(30), 10451–10453 (2005).
[Crossref] [PubMed]

Pan, J.

J. Tao, J. Chai, X. Lu, L. M. Wong, T. I. Wong, J. Pan, Q. Xiong, D. Chi, and S. Wang, “Growth of wafer-scale MoS2 monolayer by magnetron sputtering,” Nanoscale 7(6), 2497–2503 (2015).
[Crossref] [PubMed]

Park, J.-H.

J. Jeon, S. K. Jang, S. M. Jeon, G. Yoo, Y. H. Jang, J.-H. Park, and S. Lee, “Layer-controlled CVD growth of large-area two-dimensional MoS2 films,” Nanoscale 7(5), 1688–1695 (2015).
[Crossref] [PubMed]

Park, M. K.

H. S. Lee, S.-W. Min, Y.-G. Chang, M. K. Park, T. Nam, H. Kim, J. H. Kim, S. Ryu, and S. Im, “MoS₂ nanosheet phototransistors with thickness-modulated optical energy gap,” Nano Lett. 12(7), 3695–3700 (2012).
[Crossref] [PubMed]

Perea-López, N.

N. Perea-López, Z. Lin, N. R. Pradhan, A. Iñiguez-Rábago, A. L. Elías, A. McCreary, J. Lou, P. M. Ajayan, H. Terrones, L. Balicas, and M. Terrones, “CVD-grown monolayered MoS2 as an effective photosensor operating at low-voltage,” 2D Materials (Basel) 1(1), 011004 (2014).
[Crossref]

Perebeinos, V.

F. Xia, T. Mueller, R. Golizadeh-Mojarad, M. Freitag, Y. M. Lin, J. Tsang, V. Perebeinos, and P. Avouris, “Photocurrent imaging and efficient photon detection in a graphene transistor,” Nano Lett. 9(3), 1039–1044 (2009).
[Crossref] [PubMed]

Polini, M.

F. H. L. Koppens, T. Mueller, P. Avouris, A. C. Ferrari, M. S. Vitiello, and M. Polini, “Photodetectors based on graphene, other two-dimensional materials and hybrid systems,” Nat. Nanotechnol. 9(10), 780–793 (2014).
[Crossref] [PubMed]

Pradhan, N. R.

N. Perea-López, Z. Lin, N. R. Pradhan, A. Iñiguez-Rábago, A. L. Elías, A. McCreary, J. Lou, P. M. Ajayan, H. Terrones, L. Balicas, and M. Terrones, “CVD-grown monolayered MoS2 as an effective photosensor operating at low-voltage,” 2D Materials (Basel) 1(1), 011004 (2014).
[Crossref]

Radenovic, A.

O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, and A. Kis, “Ultrasensitive photodetectors based on monolayer MoS2,” Nat. Nanotechnol. 8(7), 497–501 (2013).
[Crossref] [PubMed]

Ramasubramaniam, A.

F. Xia, H. Wang, D. Xiao, M. Dubey, and A. Ramasubramaniam, “Two-dimensional material nanophotonics,” Nat. Photonics 8(12), 899–907 (2014).
[Crossref]

Ryu, S.

H. S. Lee, S.-W. Min, Y.-G. Chang, M. K. Park, T. Nam, H. Kim, J. H. Kim, S. Ryu, and S. Im, “MoS₂ nanosheet phototransistors with thickness-modulated optical energy gap,” Nano Lett. 12(7), 3695–3700 (2012).
[Crossref] [PubMed]

Schedin, F.

K. S. Novoselov, D. Jiang, F. Schedin, T. J. Booth, V. V. Khotkevich, S. V. Morozov, and A. K. Geim, “Two-dimensional atomic crystals,” Proc. Natl. Acad. Sci. U.S.A. 102(30), 10451–10453 (2005).
[Crossref] [PubMed]

Shan, J.

K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS₂: a new direct-gap semiconductor,” Phys. Rev. Lett. 105(13), 136805 (2010).
[Crossref] [PubMed]

Shen, M.

L. Yang, X. Cui, J. Zhang, K. Wang, M. Shen, S. Zeng, S. A. Dayeh, L. Feng, and B. Xiang, “Lattice strain effects on the optical properties of MoS2 nanosheets,” Sci. Rep. 4, 5649 (2014).
[PubMed]

Shi, Y.

K.-K. Liu, W. Zhang, Y.-H. Lee, Y.-C. Lin, M.-T. Chang, C.-Y. Su, C.-S. Chang, H. Li, Y. Shi, H. Zhang, C.-S. Lai, and L.-J. Li, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12(3), 1538–1544 (2012).
[Crossref] [PubMed]

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6(1), 74–80 (2012).
[Crossref] [PubMed]

Strano, M. S.

Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7(11), 699–712 (2012).
[Crossref] [PubMed]

Su, C.-Y.

K.-K. Liu, W. Zhang, Y.-H. Lee, Y.-C. Lin, M.-T. Chang, C.-Y. Su, C.-S. Chang, H. Li, Y. Shi, H. Zhang, C.-S. Lai, and L.-J. Li, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12(3), 1538–1544 (2012).
[Crossref] [PubMed]

Sun, Y.

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6(1), 74–80 (2012).
[Crossref] [PubMed]

Tao, J.

J. Tao, J. Chai, X. Lu, L. M. Wong, T. I. Wong, J. Pan, Q. Xiong, D. Chi, and S. Wang, “Growth of wafer-scale MoS2 monolayer by magnetron sputtering,” Nanoscale 7(6), 2497–2503 (2015).
[Crossref] [PubMed]

Terrones, H.

N. Perea-López, Z. Lin, N. R. Pradhan, A. Iñiguez-Rábago, A. L. Elías, A. McCreary, J. Lou, P. M. Ajayan, H. Terrones, L. Balicas, and M. Terrones, “CVD-grown monolayered MoS2 as an effective photosensor operating at low-voltage,” 2D Materials (Basel) 1(1), 011004 (2014).
[Crossref]

Terrones, M.

N. Perea-López, Z. Lin, N. R. Pradhan, A. Iñiguez-Rábago, A. L. Elías, A. McCreary, J. Lou, P. M. Ajayan, H. Terrones, L. Balicas, and M. Terrones, “CVD-grown monolayered MoS2 as an effective photosensor operating at low-voltage,” 2D Materials (Basel) 1(1), 011004 (2014).
[Crossref]

Tsai, D.-S.

D.-S. Tsai, K.-K. Liu, D.-H. Lien, M.-L. Tsai, C.-F. Kang, C.-A. Lin, L.-J. Li, and J.-H. He, “Few-Layer MoS2 with high broadband Photogain and fast optical switching for use in harsh environments,” ACS Nano 7(5), 3905–3911 (2013).
[Crossref] [PubMed]

Tsai, M.-L.

W. Zhang, C.-P. Chuu, J.-K. Huang, C.-H. Chen, M.-L. Tsai, Y.-H. Chang, C.-T. Liang, Y.-Z. Chen, Y.-L. Chueh, J.-H. He, M.-Y. Chou, and L.-J. Li, “Ultrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS2 Heterostructures,” Sci. Rep. 4, 3826 (2014).
[PubMed]

D.-S. Tsai, K.-K. Liu, D.-H. Lien, M.-L. Tsai, C.-F. Kang, C.-A. Lin, L.-J. Li, and J.-H. He, “Few-Layer MoS2 with high broadband Photogain and fast optical switching for use in harsh environments,” ACS Nano 7(5), 3905–3911 (2013).
[Crossref] [PubMed]

Tsang, J.

F. Xia, T. Mueller, R. Golizadeh-Mojarad, M. Freitag, Y. M. Lin, J. Tsang, V. Perebeinos, and P. Avouris, “Photocurrent imaging and efficient photon detection in a graphene transistor,” Nano Lett. 9(3), 1039–1044 (2009).
[Crossref] [PubMed]

Valdes-Garcia, A.

F. Xia, T. Mueller, Y. M. Lin, A. Valdes-Garcia, and P. Avouris, “Ultrafast graphene photodetector,” Nat. Nanotechnol. 4(12), 839–843 (2009).
[Crossref] [PubMed]

Vitiello, M. S.

F. H. L. Koppens, T. Mueller, P. Avouris, A. C. Ferrari, M. S. Vitiello, and M. Polini, “Photodetectors based on graphene, other two-dimensional materials and hybrid systems,” Nat. Nanotechnol. 9(10), 780–793 (2014).
[Crossref] [PubMed]

Voiry, D.

G. Eda, H. Yamaguchi, D. Voiry, T. Fujita, M. Chen, and M. Chhowalla, “Photoluminescence from chemically exfoliated MoS2,” Nano Lett. 11(12), 5111–5116 (2011).
[Crossref] [PubMed]

Wang, H.

F. Xia, H. Wang, D. Xiao, M. Dubey, and A. Ramasubramaniam, “Two-dimensional material nanophotonics,” Nat. Photonics 8(12), 899–907 (2014).
[Crossref]

Wang, J. T.-W.

Y.-H. Lee, X.-Q. Zhang, W. Zhang, M.-T. Chang, C.-T. Lin, K.-D. Chang, Y.-C. Yu, J. T.-W. Wang, C.-S. Chang, L.-J. Li, and T.-W. Lin, “Synthesis of large-area MoS2 atomic layers with chemical vapor deposition,” Adv. Mater. 24(17), 2320–2325 (2012).
[Crossref] [PubMed]

Wang, K.

L. Yang, X. Cui, J. Zhang, K. Wang, M. Shen, S. Zeng, S. A. Dayeh, L. Feng, and B. Xiang, “Lattice strain effects on the optical properties of MoS2 nanosheets,” Sci. Rep. 4, 5649 (2014).
[PubMed]

Wang, Q. H.

Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7(11), 699–712 (2012).
[Crossref] [PubMed]

Wang, S.

J. Tao, J. Chai, X. Lu, L. M. Wong, T. I. Wong, J. Pan, Q. Xiong, D. Chi, and S. Wang, “Growth of wafer-scale MoS2 monolayer by magnetron sputtering,” Nanoscale 7(6), 2497–2503 (2015).
[Crossref] [PubMed]

Wang, Z.

R. Yang, Z. Wang, and P. X. L. Feng, “Electrical breakdown of multilayer MoS2 field-effect transistors with thickness-dependent mobility,” Nanoscale 6(21), 12383–12390 (2014).
[Crossref] [PubMed]

Wong, L. M.

J. Tao, J. Chai, X. Lu, L. M. Wong, T. I. Wong, J. Pan, Q. Xiong, D. Chi, and S. Wang, “Growth of wafer-scale MoS2 monolayer by magnetron sputtering,” Nanoscale 7(6), 2497–2503 (2015).
[Crossref] [PubMed]

Wong, T. I.

J. Tao, J. Chai, X. Lu, L. M. Wong, T. I. Wong, J. Pan, Q. Xiong, D. Chi, and S. Wang, “Growth of wafer-scale MoS2 monolayer by magnetron sputtering,” Nanoscale 7(6), 2497–2503 (2015).
[Crossref] [PubMed]

Xia, F.

F. Xia, H. Wang, D. Xiao, M. Dubey, and A. Ramasubramaniam, “Two-dimensional material nanophotonics,” Nat. Photonics 8(12), 899–907 (2014).
[Crossref]

F. Xia, T. Mueller, Y. M. Lin, A. Valdes-Garcia, and P. Avouris, “Ultrafast graphene photodetector,” Nat. Nanotechnol. 4(12), 839–843 (2009).
[Crossref] [PubMed]

F. Xia, T. Mueller, R. Golizadeh-Mojarad, M. Freitag, Y. M. Lin, J. Tsang, V. Perebeinos, and P. Avouris, “Photocurrent imaging and efficient photon detection in a graphene transistor,” Nano Lett. 9(3), 1039–1044 (2009).
[Crossref] [PubMed]

Xiang, B.

L. Yang, X. Cui, J. Zhang, K. Wang, M. Shen, S. Zeng, S. A. Dayeh, L. Feng, and B. Xiang, “Lattice strain effects on the optical properties of MoS2 nanosheets,” Sci. Rep. 4, 5649 (2014).
[PubMed]

Xiao, D.

F. Xia, H. Wang, D. Xiao, M. Dubey, and A. Ramasubramaniam, “Two-dimensional material nanophotonics,” Nat. Photonics 8(12), 899–907 (2014).
[Crossref]

Xiong, Q.

J. Tao, J. Chai, X. Lu, L. M. Wong, T. I. Wong, J. Pan, Q. Xiong, D. Chi, and S. Wang, “Growth of wafer-scale MoS2 monolayer by magnetron sputtering,” Nanoscale 7(6), 2497–2503 (2015).
[Crossref] [PubMed]

Yamaguchi, H.

G. Eda, H. Yamaguchi, D. Voiry, T. Fujita, M. Chen, and M. Chhowalla, “Photoluminescence from chemically exfoliated MoS2,” Nano Lett. 11(12), 5111–5116 (2011).
[Crossref] [PubMed]

Yang, L.

L. Yang, X. Cui, J. Zhang, K. Wang, M. Shen, S. Zeng, S. A. Dayeh, L. Feng, and B. Xiang, “Lattice strain effects on the optical properties of MoS2 nanosheets,” Sci. Rep. 4, 5649 (2014).
[PubMed]

Yang, R.

R. Yang, Z. Wang, and P. X. L. Feng, “Electrical breakdown of multilayer MoS2 field-effect transistors with thickness-dependent mobility,” Nanoscale 6(21), 12383–12390 (2014).
[Crossref] [PubMed]

Yin, Z.

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6(1), 74–80 (2012).
[Crossref] [PubMed]

Yoo, G.

J. Jeon, S. K. Jang, S. M. Jeon, G. Yoo, Y. H. Jang, J.-H. Park, and S. Lee, “Layer-controlled CVD growth of large-area two-dimensional MoS2 films,” Nanoscale 7(5), 1688–1695 (2015).
[Crossref] [PubMed]

Yu, S. H.

S. H. Yu, Y. Lee, S. K. Jang, J. Kang, J. Jeon, C. Lee, J. Y. Lee, H. Kim, E. Hwang, S. Lee, and J. H. Cho, “Dye-sensitized MoS2 photodetector with enhanced spectral photoresponse,” ACS Nano 8(8), 8285–8291 (2014).
[Crossref] [PubMed]

Yu, Y.-C.

Y.-H. Lee, X.-Q. Zhang, W. Zhang, M.-T. Chang, C.-T. Lin, K.-D. Chang, Y.-C. Yu, J. T.-W. Wang, C.-S. Chang, L.-J. Li, and T.-W. Lin, “Synthesis of large-area MoS2 atomic layers with chemical vapor deposition,” Adv. Mater. 24(17), 2320–2325 (2012).
[Crossref] [PubMed]

Zeng, S.

L. Yang, X. Cui, J. Zhang, K. Wang, M. Shen, S. Zeng, S. A. Dayeh, L. Feng, and B. Xiang, “Lattice strain effects on the optical properties of MoS2 nanosheets,” Sci. Rep. 4, 5649 (2014).
[PubMed]

Zhan, Y.

Y. Zhan, Z. Liu, S. Najmaei, P. M. Ajayan, and J. Lou, “Large-Area Vapor-Phase Growth and Characterization of MoS2 Atomic Layers on a SiO2 Substrate,” Small 8(7), 966–971 (2012).
[Crossref] [PubMed]

Zhang, H.

K.-K. Liu, W. Zhang, Y.-H. Lee, Y.-C. Lin, M.-T. Chang, C.-Y. Su, C.-S. Chang, H. Li, Y. Shi, H. Zhang, C.-S. Lai, and L.-J. Li, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12(3), 1538–1544 (2012).
[Crossref] [PubMed]

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6(1), 74–80 (2012).
[Crossref] [PubMed]

Zhang, J.

L. Yang, X. Cui, J. Zhang, K. Wang, M. Shen, S. Zeng, S. A. Dayeh, L. Feng, and B. Xiang, “Lattice strain effects on the optical properties of MoS2 nanosheets,” Sci. Rep. 4, 5649 (2014).
[PubMed]

Zhang, Q.

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6(1), 74–80 (2012).
[Crossref] [PubMed]

Zhang, W.

W. Zhang, C.-P. Chuu, J.-K. Huang, C.-H. Chen, M.-L. Tsai, Y.-H. Chang, C.-T. Liang, Y.-Z. Chen, Y.-L. Chueh, J.-H. He, M.-Y. Chou, and L.-J. Li, “Ultrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS2 Heterostructures,” Sci. Rep. 4, 3826 (2014).
[PubMed]

Y.-H. Lee, X.-Q. Zhang, W. Zhang, M.-T. Chang, C.-T. Lin, K.-D. Chang, Y.-C. Yu, J. T.-W. Wang, C.-S. Chang, L.-J. Li, and T.-W. Lin, “Synthesis of large-area MoS2 atomic layers with chemical vapor deposition,” Adv. Mater. 24(17), 2320–2325 (2012).
[Crossref] [PubMed]

K.-K. Liu, W. Zhang, Y.-H. Lee, Y.-C. Lin, M.-T. Chang, C.-Y. Su, C.-S. Chang, H. Li, Y. Shi, H. Zhang, C.-S. Lai, and L.-J. Li, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12(3), 1538–1544 (2012).
[Crossref] [PubMed]

Zhang, X.-Q.

Y.-H. Lee, X.-Q. Zhang, W. Zhang, M.-T. Chang, C.-T. Lin, K.-D. Chang, Y.-C. Yu, J. T.-W. Wang, C.-S. Chang, L.-J. Li, and T.-W. Lin, “Synthesis of large-area MoS2 atomic layers with chemical vapor deposition,” Adv. Mater. 24(17), 2320–2325 (2012).
[Crossref] [PubMed]

2D Materials (Basel) (1)

N. Perea-López, Z. Lin, N. R. Pradhan, A. Iñiguez-Rábago, A. L. Elías, A. McCreary, J. Lou, P. M. Ajayan, H. Terrones, L. Balicas, and M. Terrones, “CVD-grown monolayered MoS2 as an effective photosensor operating at low-voltage,” 2D Materials (Basel) 1(1), 011004 (2014).
[Crossref]

ACS Nano (3)

D.-S. Tsai, K.-K. Liu, D.-H. Lien, M.-L. Tsai, C.-F. Kang, C.-A. Lin, L.-J. Li, and J.-H. He, “Few-Layer MoS2 with high broadband Photogain and fast optical switching for use in harsh environments,” ACS Nano 7(5), 3905–3911 (2013).
[Crossref] [PubMed]

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6(1), 74–80 (2012).
[Crossref] [PubMed]

S. H. Yu, Y. Lee, S. K. Jang, J. Kang, J. Jeon, C. Lee, J. Y. Lee, H. Kim, E. Hwang, S. Lee, and J. H. Cho, “Dye-sensitized MoS2 photodetector with enhanced spectral photoresponse,” ACS Nano 8(8), 8285–8291 (2014).
[Crossref] [PubMed]

Adv. Mater. (2)

Y.-H. Lee, X.-Q. Zhang, W. Zhang, M.-T. Chang, C.-T. Lin, K.-D. Chang, Y.-C. Yu, J. T.-W. Wang, C.-S. Chang, L.-J. Li, and T.-W. Lin, “Synthesis of large-area MoS2 atomic layers with chemical vapor deposition,” Adv. Mater. 24(17), 2320–2325 (2012).
[Crossref] [PubMed]

W. Choi, M. Y. Cho, A. Konar, J. H. Lee, G.-B. Cha, S. C. Hong, S. Kim, J. Kim, D. Jena, J. Joo, and S. Kim, “High-detectivity multilayer MoS2 phototransistors with spectral response from ultraviolet to infrared,” Adv. Mater. 24(43), 5832–5836 (2012).
[Crossref] [PubMed]

Nano Lett. (4)

F. Xia, T. Mueller, R. Golizadeh-Mojarad, M. Freitag, Y. M. Lin, J. Tsang, V. Perebeinos, and P. Avouris, “Photocurrent imaging and efficient photon detection in a graphene transistor,” Nano Lett. 9(3), 1039–1044 (2009).
[Crossref] [PubMed]

K.-K. Liu, W. Zhang, Y.-H. Lee, Y.-C. Lin, M.-T. Chang, C.-Y. Su, C.-S. Chang, H. Li, Y. Shi, H. Zhang, C.-S. Lai, and L.-J. Li, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12(3), 1538–1544 (2012).
[Crossref] [PubMed]

G. Eda, H. Yamaguchi, D. Voiry, T. Fujita, M. Chen, and M. Chhowalla, “Photoluminescence from chemically exfoliated MoS2,” Nano Lett. 11(12), 5111–5116 (2011).
[Crossref] [PubMed]

H. S. Lee, S.-W. Min, Y.-G. Chang, M. K. Park, T. Nam, H. Kim, J. H. Kim, S. Ryu, and S. Im, “MoS₂ nanosheet phototransistors with thickness-modulated optical energy gap,” Nano Lett. 12(7), 3695–3700 (2012).
[Crossref] [PubMed]

Nanoscale (3)

J. Jeon, S. K. Jang, S. M. Jeon, G. Yoo, Y. H. Jang, J.-H. Park, and S. Lee, “Layer-controlled CVD growth of large-area two-dimensional MoS2 films,” Nanoscale 7(5), 1688–1695 (2015).
[Crossref] [PubMed]

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Figures (6)

Fig. 1
Fig. 1 (a) Excellent film uniformity for large scale MoS2 films as thin as two monolayers, as evident from the matching Raman peaks, (b) Precise control of the number of MoS2 layers with low thickness deviation (~5%). Inset shows the AFM step height for the 2 monolayers MoS2 film.
Fig. 2
Fig. 2 (a) Deconvolution of the XPS spectrum for the 1 monolayer MoS2 film, (b) S 2s peak binding energy position increases, and FWHM decreases as the number of MoS2 layers increases, (c) Shifts of the A1g and E12g phonon modes with increasing number of MoS2 layers, (d) Strain relaxation near the front surface as evident from the increasing RMS surface roughness with more MoS2 layers. Inset: 3D AFM image for the 2 ML MoS2 film.
Fig. 3
Fig. 3 Fabrication process flow of the large scale MoS2 photodetectors. Starting from a n-type Si wafer (a), a 5 nm HfO2 dielectric is deposited by ALD approach (b), the large-scale magnetron sputtering deposition of MoS2 films (c), and the patterning and deposition of the metal electrodes (d). (e) and (f) show the top-view optical image and scanning electron microscopy image of the completed MoS2 photodetector, respectively.
Fig. 4
Fig. 4 (a) Increasing MoS2 thickness enhances photoresponsivity due to an increased photoabsorption. (b) Higher external quantum efficiency is achieved with increasing applied bias across a wide spectral regime.
Fig. 5
Fig. 5 (a) Increased photodetectivity (D*) with thinner MoS2 layers due to (b) lower dark current level.
Fig. 6
Fig. 6 The PVD-synthesized MoS2 photodetectors in this work outperform most of the previously reported MoS2 photodetectors using mechanical exfoliation, and CVD techniques, and also Graphene based photodetectors

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