K. Akita, T. Kyono, Y. Yoshizumi, H. Kitabayashi, and K. Katayama, “Improvements of external quantum efficiency of InGaN-based blue light-emitting diodes at high current density using GaN substrates,” J. Appl. Phys. 101(3), 033104 (2007).
[Crossref]
M. J. Cich, R. I. Aldaz, A. Chakraborty, A. David, M. J. Grundmann, A. Tyagi, M. Zhang, F. M. Steranka, and M. R. Krames, “Bulk GaN based violet light-emitting diodes with high efficiency at very high current density,” Appl. Phys. Lett. 101(22), 223509 (2012).
[Crossref]
X. A. Cao, S. F. LeBoeuf, M. P. D’Evelyn, S. D. Arthur, J. Kretchmer, C. H. Yan, and Z. H. Yang, “Blue and near-ultraviolet light-emitting diodes on free-standing GaN substrates,” Appl. Phys. Lett. 84(21), 4313 (2004).
[Crossref]
C. Wiesmann, K. Bergenek, N. Linder, and U. T. Schwarz, “Photonic crystal LEDs–designing light extraction,” Laser Photon. Rev. 3(3), 262–286 (2009).
[Crossref]
G. Verzellesi, D. Saguatti, M. Meneghini, F. Bertazzi, M. Goano, G. Meneghesso, and E. Zanoni, “Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies,” J. Appl. Phys. 114(7), 071101 (2013).
[Crossref]
Y. J. Zhao, J. Sonoda, C.-C. Pan, S. Brinkley, I. Koslow, K. Fujito, H. Ohta, S. P. DenBaars, and S. Nakamura, “30-mW-class high-power and high-efficiency blue (101¯1¯) semipolar InGaN/GaN light-emitting diodes obtained by backside roughening technique,” Appl. Phys. Express 3, 102101 (2010).
S. E. Brinkley, C. L. Keraly, J. Sonoda, C. Weisbuch, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Chip Shaping for Light Extraction Enhancement of Bulk c-Plane Light-Emitting Diodes,” Appl. Phys. Express 5(3), 032104 (2012).
[Crossref]
Y. Yang, X. A. Cao, and C. H. Yan, “Rapid efficiency roll-off in high-quality green light-emitting diodes on freestanding GaN substrates,” Appl. Phys. Lett. 94(4), 041117 (2009).
[Crossref]
X. A. Cao, S. F. LeBoeuf, M. P. D’Evelyn, S. D. Arthur, J. Kretchmer, C. H. Yan, and Z. H. Yang, “Blue and near-ultraviolet light-emitting diodes on free-standing GaN substrates,” Appl. Phys. Lett. 84(21), 4313 (2004).
[Crossref]
M. J. Cich, R. I. Aldaz, A. Chakraborty, A. David, M. J. Grundmann, A. Tyagi, M. Zhang, F. M. Steranka, and M. R. Krames, “Bulk GaN based violet light-emitting diodes with high efficiency at very high current density,” Appl. Phys. Lett. 101(22), 223509 (2012).
[Crossref]
Y.-K. Fu, B.-C. Chen, Y.-H. Fang, R.-H. Jiang, Y.-H. Lu, R. Xuan, K.-F. Huang, C.-F. Lin, Y.-K. Su, J.-F. Chen, and C.-Y. Chang, “Study of InGaN-based light-emitting diodes on a roughened backside GaN substrate by a chemical wet-etching process,” IEEE Photon. Technol. Lett. 23(19), 1373–1375 (2011).
[Crossref]
C.-L. Chao, R. Xuan, H.-H. Yen, C.-H. Chiu, Y.-H. Fang, Z.-Y. Li, B.-C. Chen, C.-C. Lin, C.-H. Chiu, Y.-D. Guo, J.-F. Chen, and S.-J. Cheng, “Reduction of Efficiency Droop in InGaN Light-Emitting Diode Grown on Self-Separated Freestanding GaN Substrates,” IEEE Photon. Technol. Lett. 23(12), 798–800 (2011).
[Crossref]
C.-L. Chao, R. Xuan, H.-H. Yen, C.-H. Chiu, Y.-H. Fang, Z.-Y. Li, B.-C. Chen, C.-C. Lin, C.-H. Chiu, Y.-D. Guo, J.-F. Chen, and S.-J. Cheng, “Reduction of Efficiency Droop in InGaN Light-Emitting Diode Grown on Self-Separated Freestanding GaN Substrates,” IEEE Photon. Technol. Lett. 23(12), 798–800 (2011).
[Crossref]
Y.-K. Fu, B.-C. Chen, Y.-H. Fang, R.-H. Jiang, Y.-H. Lu, R. Xuan, K.-F. Huang, C.-F. Lin, Y.-K. Su, J.-F. Chen, and C.-Y. Chang, “Study of InGaN-based light-emitting diodes on a roughened backside GaN substrate by a chemical wet-etching process,” IEEE Photon. Technol. Lett. 23(19), 1373–1375 (2011).
[Crossref]
Y.-K. Fu, B.-C. Chen, Y.-H. Fang, R.-H. Jiang, Y.-H. Lu, R. Xuan, K.-F. Huang, C.-F. Lin, Y.-K. Su, J.-F. Chen, and C.-Y. Chang, “Study of InGaN-based light-emitting diodes on a roughened backside GaN substrate by a chemical wet-etching process,” IEEE Photon. Technol. Lett. 23(19), 1373–1375 (2011).
[Crossref]
C.-L. Chao, R. Xuan, H.-H. Yen, C.-H. Chiu, Y.-H. Fang, Z.-Y. Li, B.-C. Chen, C.-C. Lin, C.-H. Chiu, Y.-D. Guo, J.-F. Chen, and S.-J. Cheng, “Reduction of Efficiency Droop in InGaN Light-Emitting Diode Grown on Self-Separated Freestanding GaN Substrates,” IEEE Photon. Technol. Lett. 23(12), 798–800 (2011).
[Crossref]
T. B. Wei, K. Wu, Y. Chen, J. Yu, Q. Yan, Y. Y. Zhang, R. Duan, J. Wang, Y. Zeng, and J. M. Li, “Improving light output of vertical-stand-type InGaN light-emitting diodes grown on a free-standing GaN substrate with self-assembled conical arrays,” IEEE Electron Device Lett. 33(6), 857–859 (2012).
[Crossref]
T. B. Wei, K. Wu, D. Lan, Q. F. Yan, Y. Chen, C. X. Du, J. X. Wang, Y. P. Zeng, and J. M. Li, “Selectively grown photonic crystal structures for high efficiency InGaN emitting diodes using nanospherical-lens lithography,” Appl. Phys. Lett. 101(21), 211111 (2012).
[Crossref]
C.-L. Chao, R. Xuan, H.-H. Yen, C.-H. Chiu, Y.-H. Fang, Z.-Y. Li, B.-C. Chen, C.-C. Lin, C.-H. Chiu, Y.-D. Guo, J.-F. Chen, and S.-J. Cheng, “Reduction of Efficiency Droop in InGaN Light-Emitting Diode Grown on Self-Separated Freestanding GaN Substrates,” IEEE Photon. Technol. Lett. 23(12), 798–800 (2011).
[Crossref]
C.-L. Chao, R. Xuan, H.-H. Yen, C.-H. Chiu, Y.-H. Fang, Z.-Y. Li, B.-C. Chen, C.-C. Lin, C.-H. Chiu, Y.-D. Guo, J.-F. Chen, and S.-J. Cheng, “Reduction of Efficiency Droop in InGaN Light-Emitting Diode Grown on Self-Separated Freestanding GaN Substrates,” IEEE Photon. Technol. Lett. 23(12), 798–800 (2011).
[Crossref]
C.-L. Chao, R. Xuan, H.-H. Yen, C.-H. Chiu, Y.-H. Fang, Z.-Y. Li, B.-C. Chen, C.-C. Lin, C.-H. Chiu, Y.-D. Guo, J.-F. Chen, and S.-J. Cheng, “Reduction of Efficiency Droop in InGaN Light-Emitting Diode Grown on Self-Separated Freestanding GaN Substrates,” IEEE Photon. Technol. Lett. 23(12), 798–800 (2011).
[Crossref]
Q. Shan, D. S. Meyaard, Q. Dai, J. Cho, E. F. Schubert, J. K. Son, and C. Sone, “Transport-mechanism analysis of the reverse leakage current in GaInN light-emitting diodes,” Appl. Phys. Lett. 99(25), 253506 (2011).
[Crossref]
K. H. Li and H. W. Choi, “InGaN light-emitting diodes with indium-tin-oxide photonic crystal current-spreading layer,” J. Appl. Phys. 110(5), 053104 (2011).
[Crossref]
M. J. Cich, R. I. Aldaz, A. Chakraborty, A. David, M. J. Grundmann, A. Tyagi, M. Zhang, F. M. Steranka, and M. R. Krames, “Bulk GaN based violet light-emitting diodes with high efficiency at very high current density,” Appl. Phys. Lett. 101(22), 223509 (2012).
[Crossref]
J. J. Wierer, M. R. Krames, J. E. Epler, N. F. Gardner, M. G. Craford, J. R. Wendt, J. A. Simmons, and M. M. Sigalas, “InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures,” Appl. Phys. Lett. 84(19), 3885 (2004).
[Crossref]
X. A. Cao, S. F. LeBoeuf, M. P. D’Evelyn, S. D. Arthur, J. Kretchmer, C. H. Yan, and Z. H. Yang, “Blue and near-ultraviolet light-emitting diodes on free-standing GaN substrates,” Appl. Phys. Lett. 84(21), 4313 (2004).
[Crossref]
Q. Shan, D. S. Meyaard, Q. Dai, J. Cho, E. F. Schubert, J. K. Son, and C. Sone, “Transport-mechanism analysis of the reverse leakage current in GaInN light-emitting diodes,” Appl. Phys. Lett. 99(25), 253506 (2011).
[Crossref]
M. J. Cich, R. I. Aldaz, A. Chakraborty, A. David, M. J. Grundmann, A. Tyagi, M. Zhang, F. M. Steranka, and M. R. Krames, “Bulk GaN based violet light-emitting diodes with high efficiency at very high current density,” Appl. Phys. Lett. 101(22), 223509 (2012).
[Crossref]
A. David, B. Moran, K. McGroddy, E. Matioli, E. L. Hu, S. P. DenBaars, S. Nakamura, and C. Weisbuch, “GaN/InGaN light emitting diodes with embedded photonic crystal obtained by lateral epitaxial overgrowth,” Appl. Phys. Lett. 92(11), 113514 (2008).
[Crossref]
S. E. Brinkley, C. L. Keraly, J. Sonoda, C. Weisbuch, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Chip Shaping for Light Extraction Enhancement of Bulk c-Plane Light-Emitting Diodes,” Appl. Phys. Express 5(3), 032104 (2012).
[Crossref]
Y. J. Zhao, J. Sonoda, C.-C. Pan, S. Brinkley, I. Koslow, K. Fujito, H. Ohta, S. P. DenBaars, and S. Nakamura, “30-mW-class high-power and high-efficiency blue (101¯1¯) semipolar InGaN/GaN light-emitting diodes obtained by backside roughening technique,” Appl. Phys. Express 3, 102101 (2010).
A. David, B. Moran, K. McGroddy, E. Matioli, E. L. Hu, S. P. DenBaars, S. Nakamura, and C. Weisbuch, “GaN/InGaN light emitting diodes with embedded photonic crystal obtained by lateral epitaxial overgrowth,” Appl. Phys. Lett. 92(11), 113514 (2008).
[Crossref]
T. B. Wei, K. Wu, D. Lan, Q. F. Yan, Y. Chen, C. X. Du, J. X. Wang, Y. P. Zeng, and J. M. Li, “Selectively grown photonic crystal structures for high efficiency InGaN emitting diodes using nanospherical-lens lithography,” Appl. Phys. Lett. 101(21), 211111 (2012).
[Crossref]
T. B. Wei, K. Wu, Y. Chen, J. Yu, Q. Yan, Y. Y. Zhang, R. Duan, J. Wang, Y. Zeng, and J. M. Li, “Improving light output of vertical-stand-type InGaN light-emitting diodes grown on a free-standing GaN substrate with self-assembled conical arrays,” IEEE Electron Device Lett. 33(6), 857–859 (2012).
[Crossref]
J. J. Wierer, M. R. Krames, J. E. Epler, N. F. Gardner, M. G. Craford, J. R. Wendt, J. A. Simmons, and M. M. Sigalas, “InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures,” Appl. Phys. Lett. 84(19), 3885 (2004).
[Crossref]
Y.-K. Fu, B.-C. Chen, Y.-H. Fang, R.-H. Jiang, Y.-H. Lu, R. Xuan, K.-F. Huang, C.-F. Lin, Y.-K. Su, J.-F. Chen, and C.-Y. Chang, “Study of InGaN-based light-emitting diodes on a roughened backside GaN substrate by a chemical wet-etching process,” IEEE Photon. Technol. Lett. 23(19), 1373–1375 (2011).
[Crossref]
C.-L. Chao, R. Xuan, H.-H. Yen, C.-H. Chiu, Y.-H. Fang, Z.-Y. Li, B.-C. Chen, C.-C. Lin, C.-H. Chiu, Y.-D. Guo, J.-F. Chen, and S.-J. Cheng, “Reduction of Efficiency Droop in InGaN Light-Emitting Diode Grown on Self-Separated Freestanding GaN Substrates,” IEEE Photon. Technol. Lett. 23(12), 798–800 (2011).
[Crossref]
Y.-K. Fu, B.-C. Chen, Y.-H. Fang, R.-H. Jiang, Y.-H. Lu, R. Xuan, K.-F. Huang, C.-F. Lin, Y.-K. Su, J.-F. Chen, and C.-Y. Chang, “Study of InGaN-based light-emitting diodes on a roughened backside GaN substrate by a chemical wet-etching process,” IEEE Photon. Technol. Lett. 23(19), 1373–1375 (2011).
[Crossref]
Y. J. Zhao, J. Sonoda, C.-C. Pan, S. Brinkley, I. Koslow, K. Fujito, H. Ohta, S. P. DenBaars, and S. Nakamura, “30-mW-class high-power and high-efficiency blue (101¯1¯) semipolar InGaN/GaN light-emitting diodes obtained by backside roughening technique,” Appl. Phys. Express 3, 102101 (2010).
J. J. Wierer, M. R. Krames, J. E. Epler, N. F. Gardner, M. G. Craford, J. R. Wendt, J. A. Simmons, and M. M. Sigalas, “InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures,” Appl. Phys. Lett. 84(19), 3885 (2004).
[Crossref]
G. Verzellesi, D. Saguatti, M. Meneghini, F. Bertazzi, M. Goano, G. Meneghesso, and E. Zanoni, “Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies,” J. Appl. Phys. 114(7), 071101 (2013).
[Crossref]
M. J. Cich, R. I. Aldaz, A. Chakraborty, A. David, M. J. Grundmann, A. Tyagi, M. Zhang, F. M. Steranka, and M. R. Krames, “Bulk GaN based violet light-emitting diodes with high efficiency at very high current density,” Appl. Phys. Lett. 101(22), 223509 (2012).
[Crossref]
H. W. Huang, J. K. Huang, K. Y. Lee, C. F. Lin, and H. C. Guo, “Light-output-power enhancement of GaN-based light-emitting diodes on an n-GaN layer using a SiO2 photonic quasi-crystal overgrowth,” IEEE Electron Device Lett. 31(6), 573–575 (2010).
[Crossref]
C.-L. Chao, R. Xuan, H.-H. Yen, C.-H. Chiu, Y.-H. Fang, Z.-Y. Li, B.-C. Chen, C.-C. Lin, C.-H. Chiu, Y.-D. Guo, J.-F. Chen, and S.-J. Cheng, “Reduction of Efficiency Droop in InGaN Light-Emitting Diode Grown on Self-Separated Freestanding GaN Substrates,” IEEE Photon. Technol. Lett. 23(12), 798–800 (2011).
[Crossref]
D. S. Wuu, W. K. Wang, K. S. Wen, S. C. Huang, S. H. Lin, S. Y. Huang, C. F. Lin, and R. H. Horng, “Defect reduction and efficiency improvement of near-ultraviolet emitters via laterally overgrown GaN on a GaN/patterned sapphire template,” Appl. Phys. Lett. 89(16), 161105 (2006).
[Crossref]
A. David, B. Moran, K. McGroddy, E. Matioli, E. L. Hu, S. P. DenBaars, S. Nakamura, and C. Weisbuch, “GaN/InGaN light emitting diodes with embedded photonic crystal obtained by lateral epitaxial overgrowth,” Appl. Phys. Lett. 92(11), 113514 (2008).
[Crossref]
J. Jewell, D. Simeonov, S.-C. Huang, Y.-L. Hu, S. Nakamura, J. Speck, and C. Weisbuch, “Double embedded photonic crystals for extraction of guided light in light-emitting diodes,” Appl. Phys. Lett. 100(17), 171105 (2012).
[Crossref]
H. W. Huang, J. K. Huang, K. Y. Lee, C. F. Lin, and H. C. Guo, “Light-output-power enhancement of GaN-based light-emitting diodes on an n-GaN layer using a SiO2 photonic quasi-crystal overgrowth,” IEEE Electron Device Lett. 31(6), 573–575 (2010).
[Crossref]
H. W. Huang, J. K. Huang, K. Y. Lee, C. F. Lin, and H. C. Guo, “Light-output-power enhancement of GaN-based light-emitting diodes on an n-GaN layer using a SiO2 photonic quasi-crystal overgrowth,” IEEE Electron Device Lett. 31(6), 573–575 (2010).
[Crossref]
Y.-K. Fu, B.-C. Chen, Y.-H. Fang, R.-H. Jiang, Y.-H. Lu, R. Xuan, K.-F. Huang, C.-F. Lin, Y.-K. Su, J.-F. Chen, and C.-Y. Chang, “Study of InGaN-based light-emitting diodes on a roughened backside GaN substrate by a chemical wet-etching process,” IEEE Photon. Technol. Lett. 23(19), 1373–1375 (2011).
[Crossref]
D. S. Wuu, W. K. Wang, K. S. Wen, S. C. Huang, S. H. Lin, S. Y. Huang, C. F. Lin, and R. H. Horng, “Defect reduction and efficiency improvement of near-ultraviolet emitters via laterally overgrown GaN on a GaN/patterned sapphire template,” Appl. Phys. Lett. 89(16), 161105 (2006).
[Crossref]
D. S. Wuu, W. K. Wang, K. S. Wen, S. C. Huang, S. H. Lin, S. Y. Huang, C. F. Lin, and R. H. Horng, “Defect reduction and efficiency improvement of near-ultraviolet emitters via laterally overgrown GaN on a GaN/patterned sapphire template,” Appl. Phys. Lett. 89(16), 161105 (2006).
[Crossref]
J. Jewell, D. Simeonov, S.-C. Huang, Y.-L. Hu, S. Nakamura, J. Speck, and C. Weisbuch, “Double embedded photonic crystals for extraction of guided light in light-emitting diodes,” Appl. Phys. Lett. 100(17), 171105 (2012).
[Crossref]
J. Jewell, D. Simeonov, S.-C. Huang, Y.-L. Hu, S. Nakamura, J. Speck, and C. Weisbuch, “Double embedded photonic crystals for extraction of guided light in light-emitting diodes,” Appl. Phys. Lett. 100(17), 171105 (2012).
[Crossref]
Y.-K. Fu, B.-C. Chen, Y.-H. Fang, R.-H. Jiang, Y.-H. Lu, R. Xuan, K.-F. Huang, C.-F. Lin, Y.-K. Su, J.-F. Chen, and C.-Y. Chang, “Study of InGaN-based light-emitting diodes on a roughened backside GaN substrate by a chemical wet-etching process,” IEEE Photon. Technol. Lett. 23(19), 1373–1375 (2011).
[Crossref]
K. Akita, T. Kyono, Y. Yoshizumi, H. Kitabayashi, and K. Katayama, “Improvements of external quantum efficiency of InGaN-based blue light-emitting diodes at high current density using GaN substrates,” J. Appl. Phys. 101(3), 033104 (2007).
[Crossref]
S. E. Brinkley, C. L. Keraly, J. Sonoda, C. Weisbuch, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Chip Shaping for Light Extraction Enhancement of Bulk c-Plane Light-Emitting Diodes,” Appl. Phys. Express 5(3), 032104 (2012).
[Crossref]
Y.-J. Kim, M.-K. Kwon, K.-S. Lee, S.-J. Park, S. H. Kim, and K.-D. Lee, “Enhanced light extraction from GaN-based green light-emitting diode with photonic crystal,” Appl. Phys. Lett. 91(18), 181109 (2007).
[Crossref]
Y.-J. Kim, M.-K. Kwon, K.-S. Lee, S.-J. Park, S. H. Kim, and K.-D. Lee, “Enhanced light extraction from GaN-based green light-emitting diode with photonic crystal,” Appl. Phys. Lett. 91(18), 181109 (2007).
[Crossref]
K. Akita, T. Kyono, Y. Yoshizumi, H. Kitabayashi, and K. Katayama, “Improvements of external quantum efficiency of InGaN-based blue light-emitting diodes at high current density using GaN substrates,” J. Appl. Phys. 101(3), 033104 (2007).
[Crossref]
Y. J. Zhao, J. Sonoda, C.-C. Pan, S. Brinkley, I. Koslow, K. Fujito, H. Ohta, S. P. DenBaars, and S. Nakamura, “30-mW-class high-power and high-efficiency blue (101¯1¯) semipolar InGaN/GaN light-emitting diodes obtained by backside roughening technique,” Appl. Phys. Express 3, 102101 (2010).
M. J. Cich, R. I. Aldaz, A. Chakraborty, A. David, M. J. Grundmann, A. Tyagi, M. Zhang, F. M. Steranka, and M. R. Krames, “Bulk GaN based violet light-emitting diodes with high efficiency at very high current density,” Appl. Phys. Lett. 101(22), 223509 (2012).
[Crossref]
J. J. Wierer, M. R. Krames, J. E. Epler, N. F. Gardner, M. G. Craford, J. R. Wendt, J. A. Simmons, and M. M. Sigalas, “InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures,” Appl. Phys. Lett. 84(19), 3885 (2004).
[Crossref]
X. A. Cao, S. F. LeBoeuf, M. P. D’Evelyn, S. D. Arthur, J. Kretchmer, C. H. Yan, and Z. H. Yang, “Blue and near-ultraviolet light-emitting diodes on free-standing GaN substrates,” Appl. Phys. Lett. 84(21), 4313 (2004).
[Crossref]
Y.-J. Kim, M.-K. Kwon, K.-S. Lee, S.-J. Park, S. H. Kim, and K.-D. Lee, “Enhanced light extraction from GaN-based green light-emitting diode with photonic crystal,” Appl. Phys. Lett. 91(18), 181109 (2007).
[Crossref]
K. Akita, T. Kyono, Y. Yoshizumi, H. Kitabayashi, and K. Katayama, “Improvements of external quantum efficiency of InGaN-based blue light-emitting diodes at high current density using GaN substrates,” J. Appl. Phys. 101(3), 033104 (2007).
[Crossref]
T. B. Wei, K. Wu, D. Lan, Q. F. Yan, Y. Chen, C. X. Du, J. X. Wang, Y. P. Zeng, and J. M. Li, “Selectively grown photonic crystal structures for high efficiency InGaN emitting diodes using nanospherical-lens lithography,” Appl. Phys. Lett. 101(21), 211111 (2012).
[Crossref]
X. A. Cao, S. F. LeBoeuf, M. P. D’Evelyn, S. D. Arthur, J. Kretchmer, C. H. Yan, and Z. H. Yang, “Blue and near-ultraviolet light-emitting diodes on free-standing GaN substrates,” Appl. Phys. Lett. 84(21), 4313 (2004).
[Crossref]
H. W. Huang, J. K. Huang, K. Y. Lee, C. F. Lin, and H. C. Guo, “Light-output-power enhancement of GaN-based light-emitting diodes on an n-GaN layer using a SiO2 photonic quasi-crystal overgrowth,” IEEE Electron Device Lett. 31(6), 573–575 (2010).
[Crossref]
Y.-J. Kim, M.-K. Kwon, K.-S. Lee, S.-J. Park, S. H. Kim, and K.-D. Lee, “Enhanced light extraction from GaN-based green light-emitting diode with photonic crystal,” Appl. Phys. Lett. 91(18), 181109 (2007).
[Crossref]
Y.-J. Kim, M.-K. Kwon, K.-S. Lee, S.-J. Park, S. H. Kim, and K.-D. Lee, “Enhanced light extraction from GaN-based green light-emitting diode with photonic crystal,” Appl. Phys. Lett. 91(18), 181109 (2007).
[Crossref]
B. Sun, L. X. Zhao, T. B. Wei, X. Y. Yi, Z. Q. Liu, G. H. Wang, and J. M. Li, “Shape designing for light extraction enhancement bulk-GaN light-emitting diodes,” J. Appl. Phys. 113(24), 243104 (2013).
[Crossref]
T. B. Wei, K. Wu, D. Lan, Q. F. Yan, Y. Chen, C. X. Du, J. X. Wang, Y. P. Zeng, and J. M. Li, “Selectively grown photonic crystal structures for high efficiency InGaN emitting diodes using nanospherical-lens lithography,” Appl. Phys. Lett. 101(21), 211111 (2012).
[Crossref]
T. B. Wei, K. Wu, Y. Chen, J. Yu, Q. Yan, Y. Y. Zhang, R. Duan, J. Wang, Y. Zeng, and J. M. Li, “Improving light output of vertical-stand-type InGaN light-emitting diodes grown on a free-standing GaN substrate with self-assembled conical arrays,” IEEE Electron Device Lett. 33(6), 857–859 (2012).
[Crossref]
K. H. Li and H. W. Choi, “InGaN light-emitting diodes with indium-tin-oxide photonic crystal current-spreading layer,” J. Appl. Phys. 110(5), 053104 (2011).
[Crossref]
C.-L. Chao, R. Xuan, H.-H. Yen, C.-H. Chiu, Y.-H. Fang, Z.-Y. Li, B.-C. Chen, C.-C. Lin, C.-H. Chiu, Y.-D. Guo, J.-F. Chen, and S.-J. Cheng, “Reduction of Efficiency Droop in InGaN Light-Emitting Diode Grown on Self-Separated Freestanding GaN Substrates,” IEEE Photon. Technol. Lett. 23(12), 798–800 (2011).
[Crossref]
H. W. Huang, J. K. Huang, K. Y. Lee, C. F. Lin, and H. C. Guo, “Light-output-power enhancement of GaN-based light-emitting diodes on an n-GaN layer using a SiO2 photonic quasi-crystal overgrowth,” IEEE Electron Device Lett. 31(6), 573–575 (2010).
[Crossref]
D. S. Wuu, W. K. Wang, K. S. Wen, S. C. Huang, S. H. Lin, S. Y. Huang, C. F. Lin, and R. H. Horng, “Defect reduction and efficiency improvement of near-ultraviolet emitters via laterally overgrown GaN on a GaN/patterned sapphire template,” Appl. Phys. Lett. 89(16), 161105 (2006).
[Crossref]
C.-L. Chao, R. Xuan, H.-H. Yen, C.-H. Chiu, Y.-H. Fang, Z.-Y. Li, B.-C. Chen, C.-C. Lin, C.-H. Chiu, Y.-D. Guo, J.-F. Chen, and S.-J. Cheng, “Reduction of Efficiency Droop in InGaN Light-Emitting Diode Grown on Self-Separated Freestanding GaN Substrates,” IEEE Photon. Technol. Lett. 23(12), 798–800 (2011).
[Crossref]
Y.-K. Fu, B.-C. Chen, Y.-H. Fang, R.-H. Jiang, Y.-H. Lu, R. Xuan, K.-F. Huang, C.-F. Lin, Y.-K. Su, J.-F. Chen, and C.-Y. Chang, “Study of InGaN-based light-emitting diodes on a roughened backside GaN substrate by a chemical wet-etching process,” IEEE Photon. Technol. Lett. 23(19), 1373–1375 (2011).
[Crossref]
D. S. Wuu, W. K. Wang, K. S. Wen, S. C. Huang, S. H. Lin, S. Y. Huang, C. F. Lin, and R. H. Horng, “Defect reduction and efficiency improvement of near-ultraviolet emitters via laterally overgrown GaN on a GaN/patterned sapphire template,” Appl. Phys. Lett. 89(16), 161105 (2006).
[Crossref]
C. Wiesmann, K. Bergenek, N. Linder, and U. T. Schwarz, “Photonic crystal LEDs–designing light extraction,” Laser Photon. Rev. 3(3), 262–286 (2009).
[Crossref]
B. Sun, L. X. Zhao, T. B. Wei, X. Y. Yi, Z. Q. Liu, G. H. Wang, and J. M. Li, “Shape designing for light extraction enhancement bulk-GaN light-emitting diodes,” J. Appl. Phys. 113(24), 243104 (2013).
[Crossref]
Y.-K. Fu, B.-C. Chen, Y.-H. Fang, R.-H. Jiang, Y.-H. Lu, R. Xuan, K.-F. Huang, C.-F. Lin, Y.-K. Su, J.-F. Chen, and C.-Y. Chang, “Study of InGaN-based light-emitting diodes on a roughened backside GaN substrate by a chemical wet-etching process,” IEEE Photon. Technol. Lett. 23(19), 1373–1375 (2011).
[Crossref]
A. David, B. Moran, K. McGroddy, E. Matioli, E. L. Hu, S. P. DenBaars, S. Nakamura, and C. Weisbuch, “GaN/InGaN light emitting diodes with embedded photonic crystal obtained by lateral epitaxial overgrowth,” Appl. Phys. Lett. 92(11), 113514 (2008).
[Crossref]
A. David, B. Moran, K. McGroddy, E. Matioli, E. L. Hu, S. P. DenBaars, S. Nakamura, and C. Weisbuch, “GaN/InGaN light emitting diodes with embedded photonic crystal obtained by lateral epitaxial overgrowth,” Appl. Phys. Lett. 92(11), 113514 (2008).
[Crossref]
G. Verzellesi, D. Saguatti, M. Meneghini, F. Bertazzi, M. Goano, G. Meneghesso, and E. Zanoni, “Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies,” J. Appl. Phys. 114(7), 071101 (2013).
[Crossref]
G. Verzellesi, D. Saguatti, M. Meneghini, F. Bertazzi, M. Goano, G. Meneghesso, and E. Zanoni, “Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies,” J. Appl. Phys. 114(7), 071101 (2013).
[Crossref]
Q. Shan, D. S. Meyaard, Q. Dai, J. Cho, E. F. Schubert, J. K. Son, and C. Sone, “Transport-mechanism analysis of the reverse leakage current in GaInN light-emitting diodes,” Appl. Phys. Lett. 99(25), 253506 (2011).
[Crossref]
B. Monemar and B. E. Sernelius, “Defect related issues in the “current roll-off” in InGaN based light emitting diodes,” Appl. Phys. Lett. 91(18), 181103 (2007).
[Crossref]
A. David, B. Moran, K. McGroddy, E. Matioli, E. L. Hu, S. P. DenBaars, S. Nakamura, and C. Weisbuch, “GaN/InGaN light emitting diodes with embedded photonic crystal obtained by lateral epitaxial overgrowth,” Appl. Phys. Lett. 92(11), 113514 (2008).
[Crossref]
J. Jewell, D. Simeonov, S.-C. Huang, Y.-L. Hu, S. Nakamura, J. Speck, and C. Weisbuch, “Double embedded photonic crystals for extraction of guided light in light-emitting diodes,” Appl. Phys. Lett. 100(17), 171105 (2012).
[Crossref]
S. E. Brinkley, C. L. Keraly, J. Sonoda, C. Weisbuch, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Chip Shaping for Light Extraction Enhancement of Bulk c-Plane Light-Emitting Diodes,” Appl. Phys. Express 5(3), 032104 (2012).
[Crossref]
Y. J. Zhao, J. Sonoda, C.-C. Pan, S. Brinkley, I. Koslow, K. Fujito, H. Ohta, S. P. DenBaars, and S. Nakamura, “30-mW-class high-power and high-efficiency blue (101¯1¯) semipolar InGaN/GaN light-emitting diodes obtained by backside roughening technique,” Appl. Phys. Express 3, 102101 (2010).
A. David, B. Moran, K. McGroddy, E. Matioli, E. L. Hu, S. P. DenBaars, S. Nakamura, and C. Weisbuch, “GaN/InGaN light emitting diodes with embedded photonic crystal obtained by lateral epitaxial overgrowth,” Appl. Phys. Lett. 92(11), 113514 (2008).
[Crossref]
Y. J. Zhao, J. Sonoda, C.-C. Pan, S. Brinkley, I. Koslow, K. Fujito, H. Ohta, S. P. DenBaars, and S. Nakamura, “30-mW-class high-power and high-efficiency blue (101¯1¯) semipolar InGaN/GaN light-emitting diodes obtained by backside roughening technique,” Appl. Phys. Express 3, 102101 (2010).
Y. J. Zhao, J. Sonoda, C.-C. Pan, S. Brinkley, I. Koslow, K. Fujito, H. Ohta, S. P. DenBaars, and S. Nakamura, “30-mW-class high-power and high-efficiency blue (101¯1¯) semipolar InGaN/GaN light-emitting diodes obtained by backside roughening technique,” Appl. Phys. Express 3, 102101 (2010).
Y.-J. Kim, M.-K. Kwon, K.-S. Lee, S.-J. Park, S. H. Kim, and K.-D. Lee, “Enhanced light extraction from GaN-based green light-emitting diode with photonic crystal,” Appl. Phys. Lett. 91(18), 181109 (2007).
[Crossref]
G. Verzellesi, D. Saguatti, M. Meneghini, F. Bertazzi, M. Goano, G. Meneghesso, and E. Zanoni, “Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies,” J. Appl. Phys. 114(7), 071101 (2013).
[Crossref]
Q. Shan, D. S. Meyaard, Q. Dai, J. Cho, E. F. Schubert, J. K. Son, and C. Sone, “Transport-mechanism analysis of the reverse leakage current in GaInN light-emitting diodes,” Appl. Phys. Lett. 99(25), 253506 (2011).
[Crossref]
C. Wiesmann, K. Bergenek, N. Linder, and U. T. Schwarz, “Photonic crystal LEDs–designing light extraction,” Laser Photon. Rev. 3(3), 262–286 (2009).
[Crossref]
B. Monemar and B. E. Sernelius, “Defect related issues in the “current roll-off” in InGaN based light emitting diodes,” Appl. Phys. Lett. 91(18), 181103 (2007).
[Crossref]
Q. Shan, D. S. Meyaard, Q. Dai, J. Cho, E. F. Schubert, J. K. Son, and C. Sone, “Transport-mechanism analysis of the reverse leakage current in GaInN light-emitting diodes,” Appl. Phys. Lett. 99(25), 253506 (2011).
[Crossref]
J. J. Wierer, M. R. Krames, J. E. Epler, N. F. Gardner, M. G. Craford, J. R. Wendt, J. A. Simmons, and M. M. Sigalas, “InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures,” Appl. Phys. Lett. 84(19), 3885 (2004).
[Crossref]
J. Jewell, D. Simeonov, S.-C. Huang, Y.-L. Hu, S. Nakamura, J. Speck, and C. Weisbuch, “Double embedded photonic crystals for extraction of guided light in light-emitting diodes,” Appl. Phys. Lett. 100(17), 171105 (2012).
[Crossref]
J. J. Wierer, M. R. Krames, J. E. Epler, N. F. Gardner, M. G. Craford, J. R. Wendt, J. A. Simmons, and M. M. Sigalas, “InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures,” Appl. Phys. Lett. 84(19), 3885 (2004).
[Crossref]
Q. Shan, D. S. Meyaard, Q. Dai, J. Cho, E. F. Schubert, J. K. Son, and C. Sone, “Transport-mechanism analysis of the reverse leakage current in GaInN light-emitting diodes,” Appl. Phys. Lett. 99(25), 253506 (2011).
[Crossref]
Q. Shan, D. S. Meyaard, Q. Dai, J. Cho, E. F. Schubert, J. K. Son, and C. Sone, “Transport-mechanism analysis of the reverse leakage current in GaInN light-emitting diodes,” Appl. Phys. Lett. 99(25), 253506 (2011).
[Crossref]
S. E. Brinkley, C. L. Keraly, J. Sonoda, C. Weisbuch, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Chip Shaping for Light Extraction Enhancement of Bulk c-Plane Light-Emitting Diodes,” Appl. Phys. Express 5(3), 032104 (2012).
[Crossref]
Y. J. Zhao, J. Sonoda, C.-C. Pan, S. Brinkley, I. Koslow, K. Fujito, H. Ohta, S. P. DenBaars, and S. Nakamura, “30-mW-class high-power and high-efficiency blue (101¯1¯) semipolar InGaN/GaN light-emitting diodes obtained by backside roughening technique,” Appl. Phys. Express 3, 102101 (2010).
J. Jewell, D. Simeonov, S.-C. Huang, Y.-L. Hu, S. Nakamura, J. Speck, and C. Weisbuch, “Double embedded photonic crystals for extraction of guided light in light-emitting diodes,” Appl. Phys. Lett. 100(17), 171105 (2012).
[Crossref]
S. E. Brinkley, C. L. Keraly, J. Sonoda, C. Weisbuch, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Chip Shaping for Light Extraction Enhancement of Bulk c-Plane Light-Emitting Diodes,” Appl. Phys. Express 5(3), 032104 (2012).
[Crossref]
M. J. Cich, R. I. Aldaz, A. Chakraborty, A. David, M. J. Grundmann, A. Tyagi, M. Zhang, F. M. Steranka, and M. R. Krames, “Bulk GaN based violet light-emitting diodes with high efficiency at very high current density,” Appl. Phys. Lett. 101(22), 223509 (2012).
[Crossref]
Y.-K. Fu, B.-C. Chen, Y.-H. Fang, R.-H. Jiang, Y.-H. Lu, R. Xuan, K.-F. Huang, C.-F. Lin, Y.-K. Su, J.-F. Chen, and C.-Y. Chang, “Study of InGaN-based light-emitting diodes on a roughened backside GaN substrate by a chemical wet-etching process,” IEEE Photon. Technol. Lett. 23(19), 1373–1375 (2011).
[Crossref]
B. Sun, L. X. Zhao, T. B. Wei, X. Y. Yi, Z. Q. Liu, G. H. Wang, and J. M. Li, “Shape designing for light extraction enhancement bulk-GaN light-emitting diodes,” J. Appl. Phys. 113(24), 243104 (2013).
[Crossref]
M. J. Cich, R. I. Aldaz, A. Chakraborty, A. David, M. J. Grundmann, A. Tyagi, M. Zhang, F. M. Steranka, and M. R. Krames, “Bulk GaN based violet light-emitting diodes with high efficiency at very high current density,” Appl. Phys. Lett. 101(22), 223509 (2012).
[Crossref]
G. Verzellesi, D. Saguatti, M. Meneghini, F. Bertazzi, M. Goano, G. Meneghesso, and E. Zanoni, “Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies,” J. Appl. Phys. 114(7), 071101 (2013).
[Crossref]
B. Sun, L. X. Zhao, T. B. Wei, X. Y. Yi, Z. Q. Liu, G. H. Wang, and J. M. Li, “Shape designing for light extraction enhancement bulk-GaN light-emitting diodes,” J. Appl. Phys. 113(24), 243104 (2013).
[Crossref]
T. B. Wei, K. Wu, Y. Chen, J. Yu, Q. Yan, Y. Y. Zhang, R. Duan, J. Wang, Y. Zeng, and J. M. Li, “Improving light output of vertical-stand-type InGaN light-emitting diodes grown on a free-standing GaN substrate with self-assembled conical arrays,” IEEE Electron Device Lett. 33(6), 857–859 (2012).
[Crossref]
T. B. Wei, K. Wu, D. Lan, Q. F. Yan, Y. Chen, C. X. Du, J. X. Wang, Y. P. Zeng, and J. M. Li, “Selectively grown photonic crystal structures for high efficiency InGaN emitting diodes using nanospherical-lens lithography,” Appl. Phys. Lett. 101(21), 211111 (2012).
[Crossref]
D. S. Wuu, W. K. Wang, K. S. Wen, S. C. Huang, S. H. Lin, S. Y. Huang, C. F. Lin, and R. H. Horng, “Defect reduction and efficiency improvement of near-ultraviolet emitters via laterally overgrown GaN on a GaN/patterned sapphire template,” Appl. Phys. Lett. 89(16), 161105 (2006).
[Crossref]
B. Sun, L. X. Zhao, T. B. Wei, X. Y. Yi, Z. Q. Liu, G. H. Wang, and J. M. Li, “Shape designing for light extraction enhancement bulk-GaN light-emitting diodes,” J. Appl. Phys. 113(24), 243104 (2013).
[Crossref]
T. B. Wei, K. Wu, D. Lan, Q. F. Yan, Y. Chen, C. X. Du, J. X. Wang, Y. P. Zeng, and J. M. Li, “Selectively grown photonic crystal structures for high efficiency InGaN emitting diodes using nanospherical-lens lithography,” Appl. Phys. Lett. 101(21), 211111 (2012).
[Crossref]
T. B. Wei, K. Wu, Y. Chen, J. Yu, Q. Yan, Y. Y. Zhang, R. Duan, J. Wang, Y. Zeng, and J. M. Li, “Improving light output of vertical-stand-type InGaN light-emitting diodes grown on a free-standing GaN substrate with self-assembled conical arrays,” IEEE Electron Device Lett. 33(6), 857–859 (2012).
[Crossref]
S. E. Brinkley, C. L. Keraly, J. Sonoda, C. Weisbuch, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Chip Shaping for Light Extraction Enhancement of Bulk c-Plane Light-Emitting Diodes,” Appl. Phys. Express 5(3), 032104 (2012).
[Crossref]
J. Jewell, D. Simeonov, S.-C. Huang, Y.-L. Hu, S. Nakamura, J. Speck, and C. Weisbuch, “Double embedded photonic crystals for extraction of guided light in light-emitting diodes,” Appl. Phys. Lett. 100(17), 171105 (2012).
[Crossref]
A. David, B. Moran, K. McGroddy, E. Matioli, E. L. Hu, S. P. DenBaars, S. Nakamura, and C. Weisbuch, “GaN/InGaN light emitting diodes with embedded photonic crystal obtained by lateral epitaxial overgrowth,” Appl. Phys. Lett. 92(11), 113514 (2008).
[Crossref]
D. S. Wuu, W. K. Wang, K. S. Wen, S. C. Huang, S. H. Lin, S. Y. Huang, C. F. Lin, and R. H. Horng, “Defect reduction and efficiency improvement of near-ultraviolet emitters via laterally overgrown GaN on a GaN/patterned sapphire template,” Appl. Phys. Lett. 89(16), 161105 (2006).
[Crossref]
J. J. Wierer, M. R. Krames, J. E. Epler, N. F. Gardner, M. G. Craford, J. R. Wendt, J. A. Simmons, and M. M. Sigalas, “InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures,” Appl. Phys. Lett. 84(19), 3885 (2004).
[Crossref]
J. J. Wierer, M. R. Krames, J. E. Epler, N. F. Gardner, M. G. Craford, J. R. Wendt, J. A. Simmons, and M. M. Sigalas, “InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures,” Appl. Phys. Lett. 84(19), 3885 (2004).
[Crossref]
C. Wiesmann, K. Bergenek, N. Linder, and U. T. Schwarz, “Photonic crystal LEDs–designing light extraction,” Laser Photon. Rev. 3(3), 262–286 (2009).
[Crossref]
T. B. Wei, K. Wu, D. Lan, Q. F. Yan, Y. Chen, C. X. Du, J. X. Wang, Y. P. Zeng, and J. M. Li, “Selectively grown photonic crystal structures for high efficiency InGaN emitting diodes using nanospherical-lens lithography,” Appl. Phys. Lett. 101(21), 211111 (2012).
[Crossref]
T. B. Wei, K. Wu, Y. Chen, J. Yu, Q. Yan, Y. Y. Zhang, R. Duan, J. Wang, Y. Zeng, and J. M. Li, “Improving light output of vertical-stand-type InGaN light-emitting diodes grown on a free-standing GaN substrate with self-assembled conical arrays,” IEEE Electron Device Lett. 33(6), 857–859 (2012).
[Crossref]
D. S. Wuu, W. K. Wang, K. S. Wen, S. C. Huang, S. H. Lin, S. Y. Huang, C. F. Lin, and R. H. Horng, “Defect reduction and efficiency improvement of near-ultraviolet emitters via laterally overgrown GaN on a GaN/patterned sapphire template,” Appl. Phys. Lett. 89(16), 161105 (2006).
[Crossref]
C.-L. Chao, R. Xuan, H.-H. Yen, C.-H. Chiu, Y.-H. Fang, Z.-Y. Li, B.-C. Chen, C.-C. Lin, C.-H. Chiu, Y.-D. Guo, J.-F. Chen, and S.-J. Cheng, “Reduction of Efficiency Droop in InGaN Light-Emitting Diode Grown on Self-Separated Freestanding GaN Substrates,” IEEE Photon. Technol. Lett. 23(12), 798–800 (2011).
[Crossref]
Y.-K. Fu, B.-C. Chen, Y.-H. Fang, R.-H. Jiang, Y.-H. Lu, R. Xuan, K.-F. Huang, C.-F. Lin, Y.-K. Su, J.-F. Chen, and C.-Y. Chang, “Study of InGaN-based light-emitting diodes on a roughened backside GaN substrate by a chemical wet-etching process,” IEEE Photon. Technol. Lett. 23(19), 1373–1375 (2011).
[Crossref]
Y. Yang, X. A. Cao, and C. H. Yan, “Rapid efficiency roll-off in high-quality green light-emitting diodes on freestanding GaN substrates,” Appl. Phys. Lett. 94(4), 041117 (2009).
[Crossref]
X. A. Cao, S. F. LeBoeuf, M. P. D’Evelyn, S. D. Arthur, J. Kretchmer, C. H. Yan, and Z. H. Yang, “Blue and near-ultraviolet light-emitting diodes on free-standing GaN substrates,” Appl. Phys. Lett. 84(21), 4313 (2004).
[Crossref]
T. B. Wei, K. Wu, Y. Chen, J. Yu, Q. Yan, Y. Y. Zhang, R. Duan, J. Wang, Y. Zeng, and J. M. Li, “Improving light output of vertical-stand-type InGaN light-emitting diodes grown on a free-standing GaN substrate with self-assembled conical arrays,” IEEE Electron Device Lett. 33(6), 857–859 (2012).
[Crossref]
T. B. Wei, K. Wu, D. Lan, Q. F. Yan, Y. Chen, C. X. Du, J. X. Wang, Y. P. Zeng, and J. M. Li, “Selectively grown photonic crystal structures for high efficiency InGaN emitting diodes using nanospherical-lens lithography,” Appl. Phys. Lett. 101(21), 211111 (2012).
[Crossref]
Y. Yang, X. A. Cao, and C. H. Yan, “Rapid efficiency roll-off in high-quality green light-emitting diodes on freestanding GaN substrates,” Appl. Phys. Lett. 94(4), 041117 (2009).
[Crossref]
X. A. Cao, S. F. LeBoeuf, M. P. D’Evelyn, S. D. Arthur, J. Kretchmer, C. H. Yan, and Z. H. Yang, “Blue and near-ultraviolet light-emitting diodes on free-standing GaN substrates,” Appl. Phys. Lett. 84(21), 4313 (2004).
[Crossref]
C.-L. Chao, R. Xuan, H.-H. Yen, C.-H. Chiu, Y.-H. Fang, Z.-Y. Li, B.-C. Chen, C.-C. Lin, C.-H. Chiu, Y.-D. Guo, J.-F. Chen, and S.-J. Cheng, “Reduction of Efficiency Droop in InGaN Light-Emitting Diode Grown on Self-Separated Freestanding GaN Substrates,” IEEE Photon. Technol. Lett. 23(12), 798–800 (2011).
[Crossref]
B. Sun, L. X. Zhao, T. B. Wei, X. Y. Yi, Z. Q. Liu, G. H. Wang, and J. M. Li, “Shape designing for light extraction enhancement bulk-GaN light-emitting diodes,” J. Appl. Phys. 113(24), 243104 (2013).
[Crossref]
K. Akita, T. Kyono, Y. Yoshizumi, H. Kitabayashi, and K. Katayama, “Improvements of external quantum efficiency of InGaN-based blue light-emitting diodes at high current density using GaN substrates,” J. Appl. Phys. 101(3), 033104 (2007).
[Crossref]
T. B. Wei, K. Wu, Y. Chen, J. Yu, Q. Yan, Y. Y. Zhang, R. Duan, J. Wang, Y. Zeng, and J. M. Li, “Improving light output of vertical-stand-type InGaN light-emitting diodes grown on a free-standing GaN substrate with self-assembled conical arrays,” IEEE Electron Device Lett. 33(6), 857–859 (2012).
[Crossref]
G. Verzellesi, D. Saguatti, M. Meneghini, F. Bertazzi, M. Goano, G. Meneghesso, and E. Zanoni, “Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies,” J. Appl. Phys. 114(7), 071101 (2013).
[Crossref]
T. B. Wei, K. Wu, Y. Chen, J. Yu, Q. Yan, Y. Y. Zhang, R. Duan, J. Wang, Y. Zeng, and J. M. Li, “Improving light output of vertical-stand-type InGaN light-emitting diodes grown on a free-standing GaN substrate with self-assembled conical arrays,” IEEE Electron Device Lett. 33(6), 857–859 (2012).
[Crossref]
T. B. Wei, K. Wu, D. Lan, Q. F. Yan, Y. Chen, C. X. Du, J. X. Wang, Y. P. Zeng, and J. M. Li, “Selectively grown photonic crystal structures for high efficiency InGaN emitting diodes using nanospherical-lens lithography,” Appl. Phys. Lett. 101(21), 211111 (2012).
[Crossref]
M. J. Cich, R. I. Aldaz, A. Chakraborty, A. David, M. J. Grundmann, A. Tyagi, M. Zhang, F. M. Steranka, and M. R. Krames, “Bulk GaN based violet light-emitting diodes with high efficiency at very high current density,” Appl. Phys. Lett. 101(22), 223509 (2012).
[Crossref]
T. B. Wei, K. Wu, Y. Chen, J. Yu, Q. Yan, Y. Y. Zhang, R. Duan, J. Wang, Y. Zeng, and J. M. Li, “Improving light output of vertical-stand-type InGaN light-emitting diodes grown on a free-standing GaN substrate with self-assembled conical arrays,” IEEE Electron Device Lett. 33(6), 857–859 (2012).
[Crossref]
B. Sun, L. X. Zhao, T. B. Wei, X. Y. Yi, Z. Q. Liu, G. H. Wang, and J. M. Li, “Shape designing for light extraction enhancement bulk-GaN light-emitting diodes,” J. Appl. Phys. 113(24), 243104 (2013).
[Crossref]
Y. J. Zhao, J. Sonoda, C.-C. Pan, S. Brinkley, I. Koslow, K. Fujito, H. Ohta, S. P. DenBaars, and S. Nakamura, “30-mW-class high-power and high-efficiency blue (101¯1¯) semipolar InGaN/GaN light-emitting diodes obtained by backside roughening technique,” Appl. Phys. Express 3, 102101 (2010).