Abstract

ZnO/GaN-based light-emitting diodes (LEDs) with improved asymmetric double heterostructure of Ta2O5/ZnO/HfO2 have been fabricated. Electroluminescence (EL) performance has been enhanced by the HfO2 electron blocking layer and further improved by continuing inserting the Ta2O5 hole blocking layer. The origins of the emission have been identified, which indicated that the Ta2O5/ZnO/HfO2 asymmetric structure could more effectively confine carriers in the active i-ZnO layer and meanwhile suppresses of radiation from GaN. This device exhibits superior stability in long-time running. It’s hoped that the asymmetric double heterostructure may be helpful for the development of the future ZnO-based LEDs.

© 2014 Optical Society of America

Full Article  |  PDF Article

References

  • View by:
  • |
  • |
  • |

  1. Y. S. Choi, J. W. Kang, D. K. Hwang, and S. J. Park, “Recent advances in ZnO-based light-emitting diodes,” IEEE Trans. Electron. Dev. 57(1), 26–41 (2010).
    [CrossRef]
  2. S. Pimputkar, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Prospects for LED lighting,” Nat. Photonics 3(4), 180–182 (2009).
    [CrossRef]
  3. Z. C. Feng, Handbook of Zinc Oxide and Related Materials (Taylor & Francis, 2012).
  4. Z. C. Feng, III-Nitride Devices and Nanoengineering (Imperial College, 2008).
  5. C. P. Chen, M. Y. Ke, C. C. Liu, Y. J. Chang, F. H. Yang, and J. J. Huang, “Observation of 394 nm electroluminescence from low-temperature sputtered n-ZnO∕SiO2 thin films on top of the p-GaN heterostructure,” Appl. Phys. Lett. 91(9), 091107 (2007).
    [CrossRef]
  6. H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in zinc oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
    [CrossRef]
  7. H. H. Huang, G. J. Fang, Y. Li, S. Z. Li, X. M. Mo, H. Long, H. N. Wang, D. L. Carroll, and X. Z. Zhao, “Improved and color tunable electroluminescence from n-ZnO/HfO2/p-GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 100(23), 233502 (2012).
    [CrossRef]
  8. L. C. Zhang, Q. S. Li, L. Shang, Z. J. Zhang, R. Z. Huang, and F. Z. Zhao, “Electroluminescence from n-ZnO : Ga/p-GaN heterojunction light-emitting diodes with different interfacial layers,” J. Phys. D Appl. Phys. 45(48), 485103 (2012).
    [CrossRef]
  9. S. Z. Li, W. W. Lin, G. J. Fang, F. Huang, H. H. Huang, H. Long, X. M. Mo, H. N. Wang, W. J. Guan, and X. Z. Zhao, “Ultraviolet/violet dual-color electroluminescence based on n-ZnO single crystal/p-GaN direct-contact light-emitting diode,” J. Lumin. 140, 110–113 (2013).
    [CrossRef]
  10. Z. F. Shi, Y. T. Zhang, J. X. Zhang, H. Wang, B. Wu, X. P. Cai, X. J. Cui, X. Dong, H. W. Liang, B. L. Zhang, and G. T. Du, “High-performance ultraviolet-blue light-emitting diodes based on an n-ZnO nanowall networks/p-GaN heterojunction,” Appl. Phys. Lett. 103(2), 021109 (2013).
    [CrossRef]
  11. J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 96(20), 201102 (2010).
    [CrossRef]
  12. Y. I. Alivov, E. V. Kalinina, A. E. Cherenkov, D. C. Look, B. M. Ataev, A. K. Omaev, M. V. Chukichev, and D. M. Bagnall, “Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates,” Appl. Phys. Lett. 83(23), 4719–4721 (2003).
    [CrossRef]
  13. H. Long, G. J. Fang, H. H. Huang, X. M. Mo, W. Xia, B. Z. Dong, X. Q. Meng, and X. Z. Zhao, “Ultraviolet electroluminescence from ZnO/NiO-based heterojunction light-emitting diodes,” Appl. Phys. Lett. 95(1), 013509 (2009).
    [CrossRef]
  14. H. H. Huang, G. J. Fang, X. M. Mo, H. Long, H. N. Wang, S. Z. Li, Y. Li, Y. P. Zhang, C. X. Pan, and D. L. Carroll, “Improved and orange emission from an n-ZnO/p-Si heterojunction light emitting device with NiO as the intermediate layer,” Appl. Phys. Lett. 101(22), 223504 (2012).
    [CrossRef]
  15. Y. Yang, Y. P. Li, L. L. Xiang, X. Y. Ma, and D. R. Yang, “Low-voltage driven ∼1.54 μm electroluminescence from erbium-doped ZnO/p+-Si heterostructured devices: Energy transfer from ZnO host to erbium ions,” Appl. Phys. Lett. 102(18), 181111 (2013).
    [CrossRef]
  16. J. Ahn, H. Park, M. A. Mastro, J. K. Hite, C. R. Eddy, and J. Kim, “Nanostructured n-ZnO / thin film p-silicon heterojunction light-emitting diodes,” Opt. Express 19(27), 26006–26010 (2011).
    [CrossRef] [PubMed]
  17. Y. F. Chan, W. Su, C. X. Zhang, Z. L. Wu, Y. Tang, X. Q. Sun, and H. J. Xu, “Electroluminescence from ZnO-nanofilm/Si-micropillar heterostructure arrays,” Opt. Express 20(22), 24280–24287 (2012).
    [CrossRef] [PubMed]
  18. H. Ohta, K.-i. Kawamura, M. Orita, M. Hirano, N. Sarukura, and H. Hosono, “Current injection emission from a transparent p–n junction composed of p-SrCu2O2/n-ZnO,” Appl. Phys. Lett. 77(4), 475–477 (2000).
    [CrossRef]
  19. S. F. Chichibu, T. Ohmori, N. Shibata, T. Koyama, and T. Onuma, “Greenish-white electroluminescence from p-type CuGaS2 heterojunction diodes using n-type ZnO as an electron injector,” Appl. Phys. Lett. 85(19), 4403–4405 (2004).
    [CrossRef]
  20. A. Nadarajah, R. C. Word, J. Meiss, and R. Könenkamp, “Flexible inorganic nanowire light-emitting diode,” Nano Lett. 8(2), 534–537 (2008).
    [CrossRef] [PubMed]
  21. S. Z. Li, G. J. Fang, H. Long, X. M. Mo, H. H. Huang, B. Z. Dong, and X. Z. Zhao, “Enhancement of ultraviolet electroluminescence based on n-ZnO/n-GaN isotype heterojunction with low threshold voltage,” Appl. Phys. Lett. 96(20), 201111 (2010).
    [CrossRef]
  22. L. C. Zhang, Q. S. Li, L. Shang, F. F. Wang, C. Qu, and F. Z. Zhao, “Improvement of UV electroluminescence of n-ZnO/p-GaN heterojunction LED by ZnS interlayer,” Opt. Express 21(14), 16578–16583 (2013).
    [CrossRef] [PubMed]
  23. P. C. Wu, H. Y. Lee, and C. T. Lee, “Enhanced light emission of double heterostructured MgZnO/ZnO/MgZnO in ultraviolet blind light-emitting diodes deposited by vapor cooling condensation system,” Appl. Phys. Lett. 100(13), 131116 (2012).
    [CrossRef]
  24. S. Chu, J. Z. Zhao, Z. Zuo, J. Y. Kong, L. Li, and J. L. Liu, “Enhanced output power using MgZnO/ZnO/MgZnO double heterostructure in ZnO homojunction light emitting diode,” J. Appl. Phys. 109(12), 123110 (2011).
    [CrossRef]
  25. H. Long, S. Z. Li, X. M. Mo, H. N. Wang, H. H. Huang, Z. Chen, Y. P. Liu, and G. J. Fang, “Electroluminescence from ZnO-nanorod-based double heterostructured light-emitting diodes,” Appl. Phys. Lett. 103(12), 123504 (2013).
    [CrossRef]
  26. M. Y. Ke, T. C. Lu, S. C. Yang, C. P. Chen, Y. W. Cheng, L. Y. Chen, C. Y. Chen, J. H. He, and J. J. Huang, “UV light emission from GZO/ZnO/GaN heterojunction diodes with carrier confinement layers,” Opt. Express 17(25), 22912–22917 (2009).
    [CrossRef] [PubMed]
  27. Z. F. Shi, Y. T. Zhang, X. C. Xia, W. Zhao, H. Wang, L. Zhao, X. Dong, B. L. Zhang, and G. T. Du, “Electrically driven ultraviolet random lasing from an n-MgZnO/i-ZnO/SiO2/p-Si asymmetric double heterojunction,” Nanoscale 5(11), 5080–5085 (2013).
    [CrossRef] [PubMed]
  28. S. V. Ivanov, V. A. Solov’ev, K. D. Moiseev, I. V. Sedova, Y. V. Terent’ev, A. A. Toropov, B. Y. Meltzer, M. P. Mikhailova, Y. P. Yakovlev, and P. S. Kop’ev, “Room-temperature midinfrared electroluminescence from asymmetric AlSbAs/InAs/CdMgSe heterostructures grown by molecular beam epitaxy,” Appl. Phys. Lett. 78(12), 1655 (2001).
    [CrossRef]
  29. S. V. Ivanov, V. A. Kaygorodov, S. V. Sorokin, B. Y. Meltser, V. A. Solov’ev, Y. V. Terent’ev, O. G. Lyublinskaya, K. D. Moiseev, E. A. Grebenshchikova, M. P. Mikhailova, A. A. Toropov, Y. P. Yakovlev, P. S. Kop’ev, and Z. I. Alferov, “A 2.78-μm laser diode based on hybrid AlGaAsSb/InAs/CdMgSe double heterostructure grown by molecular-beam epitaxy,” Appl. Phys. Lett. 82(21), 3782 (2003).
    [CrossRef]
  30. T. Ogino and M. Aoki, “Mechanism of yellow luminescence in GaN,” Jpn. J. Appl. Phys. 19(12), 2395–2405 (1980).
    [CrossRef]
  31. M. S. Wang, Y. J. Zhou, Y. P. Zhang, J. K. Eui, H. H. Sung, and G. S. Seung, “Near-infrared photoluminescence from ZnO,” Appl. Phys. Lett. 100(10), 101906 (2012).
    [CrossRef]
  32. C. H. Ahn, Y. Y. Kim, D. C. Kim, S. K. Mohanta, and H. K. Cho, “A comparative analysis of deep level emission in ZnO layers deposited by various methods,” J. Appl. Phys. 105(1), 013502 (2009).
    [CrossRef]
  33. N. H. Alvi, K. Ul Hasan, O. Nur, and M. Willander, “The origin of the red emission in n-ZnO nanotubes/p-GaN white light emitting diodes,” Nanoscale Res. Lett. 6(1), 130 (2011).
    [CrossRef] [PubMed]
  34. T. P. Yang, H. C. Zhu, J. M. Bian, J. C. Sun, X. Dong, B. L. Zhang, H. W. Liang, X. P. Li, Y. G. Cui, and G. T. Du, “Room temperature electroluminescence from the n-ZnO/p-GaN heterojunction device grown by MOCVD,” Mater. Res. Bull. 43(12), 3614–3620 (2008).
    [CrossRef]
  35. S. Miyazaki, “Photoemission study of energy-band alignments and gap-state density distributions for high-k gate dielectrics,” J. Vac. Sci. Technol. B 19(6), 2212 (2001).
    [CrossRef]
  36. J. S. Liu, C. X. Shan, H. Shen, B. H. Li, Z. Z. Zhang, L. Liu, L. G. Zhang, and D. Z. Shen, “ZnO light-emitting devices with a lifetime of 6.8 hours,” Appl. Phys. Lett. 101(1), 011106 (2012).
    [CrossRef]
  37. X. Y. Liu, C. X. Shan, C. Jiao, S. P. Wang, H. F. Zhao, and D. Z. Shen, “Pure ultraviolet emission from ZnO nanowire-based p-n heterostructures,” Opt. Lett. 39(3), 422–425 (2014).
    [CrossRef] [PubMed]

2014 (1)

2013 (6)

L. C. Zhang, Q. S. Li, L. Shang, F. F. Wang, C. Qu, and F. Z. Zhao, “Improvement of UV electroluminescence of n-ZnO/p-GaN heterojunction LED by ZnS interlayer,” Opt. Express 21(14), 16578–16583 (2013).
[CrossRef] [PubMed]

H. Long, S. Z. Li, X. M. Mo, H. N. Wang, H. H. Huang, Z. Chen, Y. P. Liu, and G. J. Fang, “Electroluminescence from ZnO-nanorod-based double heterostructured light-emitting diodes,” Appl. Phys. Lett. 103(12), 123504 (2013).
[CrossRef]

Z. F. Shi, Y. T. Zhang, X. C. Xia, W. Zhao, H. Wang, L. Zhao, X. Dong, B. L. Zhang, and G. T. Du, “Electrically driven ultraviolet random lasing from an n-MgZnO/i-ZnO/SiO2/p-Si asymmetric double heterojunction,” Nanoscale 5(11), 5080–5085 (2013).
[CrossRef] [PubMed]

S. Z. Li, W. W. Lin, G. J. Fang, F. Huang, H. H. Huang, H. Long, X. M. Mo, H. N. Wang, W. J. Guan, and X. Z. Zhao, “Ultraviolet/violet dual-color electroluminescence based on n-ZnO single crystal/p-GaN direct-contact light-emitting diode,” J. Lumin. 140, 110–113 (2013).
[CrossRef]

Z. F. Shi, Y. T. Zhang, J. X. Zhang, H. Wang, B. Wu, X. P. Cai, X. J. Cui, X. Dong, H. W. Liang, B. L. Zhang, and G. T. Du, “High-performance ultraviolet-blue light-emitting diodes based on an n-ZnO nanowall networks/p-GaN heterojunction,” Appl. Phys. Lett. 103(2), 021109 (2013).
[CrossRef]

Y. Yang, Y. P. Li, L. L. Xiang, X. Y. Ma, and D. R. Yang, “Low-voltage driven ∼1.54 μm electroluminescence from erbium-doped ZnO/p+-Si heterostructured devices: Energy transfer from ZnO host to erbium ions,” Appl. Phys. Lett. 102(18), 181111 (2013).
[CrossRef]

2012 (7)

H. H. Huang, G. J. Fang, X. M. Mo, H. Long, H. N. Wang, S. Z. Li, Y. Li, Y. P. Zhang, C. X. Pan, and D. L. Carroll, “Improved and orange emission from an n-ZnO/p-Si heterojunction light emitting device with NiO as the intermediate layer,” Appl. Phys. Lett. 101(22), 223504 (2012).
[CrossRef]

H. H. Huang, G. J. Fang, Y. Li, S. Z. Li, X. M. Mo, H. Long, H. N. Wang, D. L. Carroll, and X. Z. Zhao, “Improved and color tunable electroluminescence from n-ZnO/HfO2/p-GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 100(23), 233502 (2012).
[CrossRef]

L. C. Zhang, Q. S. Li, L. Shang, Z. J. Zhang, R. Z. Huang, and F. Z. Zhao, “Electroluminescence from n-ZnO : Ga/p-GaN heterojunction light-emitting diodes with different interfacial layers,” J. Phys. D Appl. Phys. 45(48), 485103 (2012).
[CrossRef]

P. C. Wu, H. Y. Lee, and C. T. Lee, “Enhanced light emission of double heterostructured MgZnO/ZnO/MgZnO in ultraviolet blind light-emitting diodes deposited by vapor cooling condensation system,” Appl. Phys. Lett. 100(13), 131116 (2012).
[CrossRef]

M. S. Wang, Y. J. Zhou, Y. P. Zhang, J. K. Eui, H. H. Sung, and G. S. Seung, “Near-infrared photoluminescence from ZnO,” Appl. Phys. Lett. 100(10), 101906 (2012).
[CrossRef]

Y. F. Chan, W. Su, C. X. Zhang, Z. L. Wu, Y. Tang, X. Q. Sun, and H. J. Xu, “Electroluminescence from ZnO-nanofilm/Si-micropillar heterostructure arrays,” Opt. Express 20(22), 24280–24287 (2012).
[CrossRef] [PubMed]

J. S. Liu, C. X. Shan, H. Shen, B. H. Li, Z. Z. Zhang, L. Liu, L. G. Zhang, and D. Z. Shen, “ZnO light-emitting devices with a lifetime of 6.8 hours,” Appl. Phys. Lett. 101(1), 011106 (2012).
[CrossRef]

2011 (3)

N. H. Alvi, K. Ul Hasan, O. Nur, and M. Willander, “The origin of the red emission in n-ZnO nanotubes/p-GaN white light emitting diodes,” Nanoscale Res. Lett. 6(1), 130 (2011).
[CrossRef] [PubMed]

J. Ahn, H. Park, M. A. Mastro, J. K. Hite, C. R. Eddy, and J. Kim, “Nanostructured n-ZnO / thin film p-silicon heterojunction light-emitting diodes,” Opt. Express 19(27), 26006–26010 (2011).
[CrossRef] [PubMed]

S. Chu, J. Z. Zhao, Z. Zuo, J. Y. Kong, L. Li, and J. L. Liu, “Enhanced output power using MgZnO/ZnO/MgZnO double heterostructure in ZnO homojunction light emitting diode,” J. Appl. Phys. 109(12), 123110 (2011).
[CrossRef]

2010 (3)

Y. S. Choi, J. W. Kang, D. K. Hwang, and S. J. Park, “Recent advances in ZnO-based light-emitting diodes,” IEEE Trans. Electron. Dev. 57(1), 26–41 (2010).
[CrossRef]

J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 96(20), 201102 (2010).
[CrossRef]

S. Z. Li, G. J. Fang, H. Long, X. M. Mo, H. H. Huang, B. Z. Dong, and X. Z. Zhao, “Enhancement of ultraviolet electroluminescence based on n-ZnO/n-GaN isotype heterojunction with low threshold voltage,” Appl. Phys. Lett. 96(20), 201111 (2010).
[CrossRef]

2009 (5)

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in zinc oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[CrossRef]

H. Long, G. J. Fang, H. H. Huang, X. M. Mo, W. Xia, B. Z. Dong, X. Q. Meng, and X. Z. Zhao, “Ultraviolet electroluminescence from ZnO/NiO-based heterojunction light-emitting diodes,” Appl. Phys. Lett. 95(1), 013509 (2009).
[CrossRef]

S. Pimputkar, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Prospects for LED lighting,” Nat. Photonics 3(4), 180–182 (2009).
[CrossRef]

C. H. Ahn, Y. Y. Kim, D. C. Kim, S. K. Mohanta, and H. K. Cho, “A comparative analysis of deep level emission in ZnO layers deposited by various methods,” J. Appl. Phys. 105(1), 013502 (2009).
[CrossRef]

M. Y. Ke, T. C. Lu, S. C. Yang, C. P. Chen, Y. W. Cheng, L. Y. Chen, C. Y. Chen, J. H. He, and J. J. Huang, “UV light emission from GZO/ZnO/GaN heterojunction diodes with carrier confinement layers,” Opt. Express 17(25), 22912–22917 (2009).
[CrossRef] [PubMed]

2008 (2)

T. P. Yang, H. C. Zhu, J. M. Bian, J. C. Sun, X. Dong, B. L. Zhang, H. W. Liang, X. P. Li, Y. G. Cui, and G. T. Du, “Room temperature electroluminescence from the n-ZnO/p-GaN heterojunction device grown by MOCVD,” Mater. Res. Bull. 43(12), 3614–3620 (2008).
[CrossRef]

A. Nadarajah, R. C. Word, J. Meiss, and R. Könenkamp, “Flexible inorganic nanowire light-emitting diode,” Nano Lett. 8(2), 534–537 (2008).
[CrossRef] [PubMed]

2007 (1)

C. P. Chen, M. Y. Ke, C. C. Liu, Y. J. Chang, F. H. Yang, and J. J. Huang, “Observation of 394 nm electroluminescence from low-temperature sputtered n-ZnO∕SiO2 thin films on top of the p-GaN heterostructure,” Appl. Phys. Lett. 91(9), 091107 (2007).
[CrossRef]

2004 (1)

S. F. Chichibu, T. Ohmori, N. Shibata, T. Koyama, and T. Onuma, “Greenish-white electroluminescence from p-type CuGaS2 heterojunction diodes using n-type ZnO as an electron injector,” Appl. Phys. Lett. 85(19), 4403–4405 (2004).
[CrossRef]

2003 (2)

Y. I. Alivov, E. V. Kalinina, A. E. Cherenkov, D. C. Look, B. M. Ataev, A. K. Omaev, M. V. Chukichev, and D. M. Bagnall, “Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates,” Appl. Phys. Lett. 83(23), 4719–4721 (2003).
[CrossRef]

S. V. Ivanov, V. A. Kaygorodov, S. V. Sorokin, B. Y. Meltser, V. A. Solov’ev, Y. V. Terent’ev, O. G. Lyublinskaya, K. D. Moiseev, E. A. Grebenshchikova, M. P. Mikhailova, A. A. Toropov, Y. P. Yakovlev, P. S. Kop’ev, and Z. I. Alferov, “A 2.78-μm laser diode based on hybrid AlGaAsSb/InAs/CdMgSe double heterostructure grown by molecular-beam epitaxy,” Appl. Phys. Lett. 82(21), 3782 (2003).
[CrossRef]

2001 (2)

S. V. Ivanov, V. A. Solov’ev, K. D. Moiseev, I. V. Sedova, Y. V. Terent’ev, A. A. Toropov, B. Y. Meltzer, M. P. Mikhailova, Y. P. Yakovlev, and P. S. Kop’ev, “Room-temperature midinfrared electroluminescence from asymmetric AlSbAs/InAs/CdMgSe heterostructures grown by molecular beam epitaxy,” Appl. Phys. Lett. 78(12), 1655 (2001).
[CrossRef]

S. Miyazaki, “Photoemission study of energy-band alignments and gap-state density distributions for high-k gate dielectrics,” J. Vac. Sci. Technol. B 19(6), 2212 (2001).
[CrossRef]

2000 (1)

H. Ohta, K.-i. Kawamura, M. Orita, M. Hirano, N. Sarukura, and H. Hosono, “Current injection emission from a transparent p–n junction composed of p-SrCu2O2/n-ZnO,” Appl. Phys. Lett. 77(4), 475–477 (2000).
[CrossRef]

1980 (1)

T. Ogino and M. Aoki, “Mechanism of yellow luminescence in GaN,” Jpn. J. Appl. Phys. 19(12), 2395–2405 (1980).
[CrossRef]

Ahn, C. H.

C. H. Ahn, Y. Y. Kim, D. C. Kim, S. K. Mohanta, and H. K. Cho, “A comparative analysis of deep level emission in ZnO layers deposited by various methods,” J. Appl. Phys. 105(1), 013502 (2009).
[CrossRef]

Ahn, J.

Alferov, Z. I.

S. V. Ivanov, V. A. Kaygorodov, S. V. Sorokin, B. Y. Meltser, V. A. Solov’ev, Y. V. Terent’ev, O. G. Lyublinskaya, K. D. Moiseev, E. A. Grebenshchikova, M. P. Mikhailova, A. A. Toropov, Y. P. Yakovlev, P. S. Kop’ev, and Z. I. Alferov, “A 2.78-μm laser diode based on hybrid AlGaAsSb/InAs/CdMgSe double heterostructure grown by molecular-beam epitaxy,” Appl. Phys. Lett. 82(21), 3782 (2003).
[CrossRef]

Alivov, Y. I.

Y. I. Alivov, E. V. Kalinina, A. E. Cherenkov, D. C. Look, B. M. Ataev, A. K. Omaev, M. V. Chukichev, and D. M. Bagnall, “Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates,” Appl. Phys. Lett. 83(23), 4719–4721 (2003).
[CrossRef]

Alvi, N. H.

N. H. Alvi, K. Ul Hasan, O. Nur, and M. Willander, “The origin of the red emission in n-ZnO nanotubes/p-GaN white light emitting diodes,” Nanoscale Res. Lett. 6(1), 130 (2011).
[CrossRef] [PubMed]

Aoki, M.

T. Ogino and M. Aoki, “Mechanism of yellow luminescence in GaN,” Jpn. J. Appl. Phys. 19(12), 2395–2405 (1980).
[CrossRef]

Ataev, B. M.

Y. I. Alivov, E. V. Kalinina, A. E. Cherenkov, D. C. Look, B. M. Ataev, A. K. Omaev, M. V. Chukichev, and D. M. Bagnall, “Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates,” Appl. Phys. Lett. 83(23), 4719–4721 (2003).
[CrossRef]

Bagnall, D. M.

Y. I. Alivov, E. V. Kalinina, A. E. Cherenkov, D. C. Look, B. M. Ataev, A. K. Omaev, M. V. Chukichev, and D. M. Bagnall, “Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates,” Appl. Phys. Lett. 83(23), 4719–4721 (2003).
[CrossRef]

Bian, J. M.

T. P. Yang, H. C. Zhu, J. M. Bian, J. C. Sun, X. Dong, B. L. Zhang, H. W. Liang, X. P. Li, Y. G. Cui, and G. T. Du, “Room temperature electroluminescence from the n-ZnO/p-GaN heterojunction device grown by MOCVD,” Mater. Res. Bull. 43(12), 3614–3620 (2008).
[CrossRef]

Cai, X. P.

Z. F. Shi, Y. T. Zhang, J. X. Zhang, H. Wang, B. Wu, X. P. Cai, X. J. Cui, X. Dong, H. W. Liang, B. L. Zhang, and G. T. Du, “High-performance ultraviolet-blue light-emitting diodes based on an n-ZnO nanowall networks/p-GaN heterojunction,” Appl. Phys. Lett. 103(2), 021109 (2013).
[CrossRef]

Carroll, D. L.

H. H. Huang, G. J. Fang, Y. Li, S. Z. Li, X. M. Mo, H. Long, H. N. Wang, D. L. Carroll, and X. Z. Zhao, “Improved and color tunable electroluminescence from n-ZnO/HfO2/p-GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 100(23), 233502 (2012).
[CrossRef]

H. H. Huang, G. J. Fang, X. M. Mo, H. Long, H. N. Wang, S. Z. Li, Y. Li, Y. P. Zhang, C. X. Pan, and D. L. Carroll, “Improved and orange emission from an n-ZnO/p-Si heterojunction light emitting device with NiO as the intermediate layer,” Appl. Phys. Lett. 101(22), 223504 (2012).
[CrossRef]

Chan, Y. F.

Chang, Y. J.

C. P. Chen, M. Y. Ke, C. C. Liu, Y. J. Chang, F. H. Yang, and J. J. Huang, “Observation of 394 nm electroluminescence from low-temperature sputtered n-ZnO∕SiO2 thin films on top of the p-GaN heterostructure,” Appl. Phys. Lett. 91(9), 091107 (2007).
[CrossRef]

Chen, C. P.

M. Y. Ke, T. C. Lu, S. C. Yang, C. P. Chen, Y. W. Cheng, L. Y. Chen, C. Y. Chen, J. H. He, and J. J. Huang, “UV light emission from GZO/ZnO/GaN heterojunction diodes with carrier confinement layers,” Opt. Express 17(25), 22912–22917 (2009).
[CrossRef] [PubMed]

C. P. Chen, M. Y. Ke, C. C. Liu, Y. J. Chang, F. H. Yang, and J. J. Huang, “Observation of 394 nm electroluminescence from low-temperature sputtered n-ZnO∕SiO2 thin films on top of the p-GaN heterostructure,” Appl. Phys. Lett. 91(9), 091107 (2007).
[CrossRef]

Chen, C. Y.

Chen, L. Y.

Chen, Z.

H. Long, S. Z. Li, X. M. Mo, H. N. Wang, H. H. Huang, Z. Chen, Y. P. Liu, and G. J. Fang, “Electroluminescence from ZnO-nanorod-based double heterostructured light-emitting diodes,” Appl. Phys. Lett. 103(12), 123504 (2013).
[CrossRef]

Cheng, Y. W.

Cherenkov, A. E.

Y. I. Alivov, E. V. Kalinina, A. E. Cherenkov, D. C. Look, B. M. Ataev, A. K. Omaev, M. V. Chukichev, and D. M. Bagnall, “Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates,” Appl. Phys. Lett. 83(23), 4719–4721 (2003).
[CrossRef]

Chichibu, S. F.

S. F. Chichibu, T. Ohmori, N. Shibata, T. Koyama, and T. Onuma, “Greenish-white electroluminescence from p-type CuGaS2 heterojunction diodes using n-type ZnO as an electron injector,” Appl. Phys. Lett. 85(19), 4403–4405 (2004).
[CrossRef]

Cho, H. K.

C. H. Ahn, Y. Y. Kim, D. C. Kim, S. K. Mohanta, and H. K. Cho, “A comparative analysis of deep level emission in ZnO layers deposited by various methods,” J. Appl. Phys. 105(1), 013502 (2009).
[CrossRef]

Choi, Y. S.

Y. S. Choi, J. W. Kang, D. K. Hwang, and S. J. Park, “Recent advances in ZnO-based light-emitting diodes,” IEEE Trans. Electron. Dev. 57(1), 26–41 (2010).
[CrossRef]

Chow, P. P.

J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 96(20), 201102 (2010).
[CrossRef]

Chu, P. K.

J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 96(20), 201102 (2010).
[CrossRef]

Chu, S.

S. Chu, J. Z. Zhao, Z. Zuo, J. Y. Kong, L. Li, and J. L. Liu, “Enhanced output power using MgZnO/ZnO/MgZnO double heterostructure in ZnO homojunction light emitting diode,” J. Appl. Phys. 109(12), 123110 (2011).
[CrossRef]

Chukichev, M. V.

Y. I. Alivov, E. V. Kalinina, A. E. Cherenkov, D. C. Look, B. M. Ataev, A. K. Omaev, M. V. Chukichev, and D. M. Bagnall, “Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates,” Appl. Phys. Lett. 83(23), 4719–4721 (2003).
[CrossRef]

Cui, B.

J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 96(20), 201102 (2010).
[CrossRef]

Cui, X. J.

Z. F. Shi, Y. T. Zhang, J. X. Zhang, H. Wang, B. Wu, X. P. Cai, X. J. Cui, X. Dong, H. W. Liang, B. L. Zhang, and G. T. Du, “High-performance ultraviolet-blue light-emitting diodes based on an n-ZnO nanowall networks/p-GaN heterojunction,” Appl. Phys. Lett. 103(2), 021109 (2013).
[CrossRef]

Cui, Y. G.

T. P. Yang, H. C. Zhu, J. M. Bian, J. C. Sun, X. Dong, B. L. Zhang, H. W. Liang, X. P. Li, Y. G. Cui, and G. T. Du, “Room temperature electroluminescence from the n-ZnO/p-GaN heterojunction device grown by MOCVD,” Mater. Res. Bull. 43(12), 3614–3620 (2008).
[CrossRef]

Dabiran, A. M.

J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 96(20), 201102 (2010).
[CrossRef]

DenBaars, S. P.

S. Pimputkar, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Prospects for LED lighting,” Nat. Photonics 3(4), 180–182 (2009).
[CrossRef]

Dong, B. Z.

S. Z. Li, G. J. Fang, H. Long, X. M. Mo, H. H. Huang, B. Z. Dong, and X. Z. Zhao, “Enhancement of ultraviolet electroluminescence based on n-ZnO/n-GaN isotype heterojunction with low threshold voltage,” Appl. Phys. Lett. 96(20), 201111 (2010).
[CrossRef]

H. Long, G. J. Fang, H. H. Huang, X. M. Mo, W. Xia, B. Z. Dong, X. Q. Meng, and X. Z. Zhao, “Ultraviolet electroluminescence from ZnO/NiO-based heterojunction light-emitting diodes,” Appl. Phys. Lett. 95(1), 013509 (2009).
[CrossRef]

Dong, X.

Z. F. Shi, Y. T. Zhang, J. X. Zhang, H. Wang, B. Wu, X. P. Cai, X. J. Cui, X. Dong, H. W. Liang, B. L. Zhang, and G. T. Du, “High-performance ultraviolet-blue light-emitting diodes based on an n-ZnO nanowall networks/p-GaN heterojunction,” Appl. Phys. Lett. 103(2), 021109 (2013).
[CrossRef]

Z. F. Shi, Y. T. Zhang, X. C. Xia, W. Zhao, H. Wang, L. Zhao, X. Dong, B. L. Zhang, and G. T. Du, “Electrically driven ultraviolet random lasing from an n-MgZnO/i-ZnO/SiO2/p-Si asymmetric double heterojunction,” Nanoscale 5(11), 5080–5085 (2013).
[CrossRef] [PubMed]

T. P. Yang, H. C. Zhu, J. M. Bian, J. C. Sun, X. Dong, B. L. Zhang, H. W. Liang, X. P. Li, Y. G. Cui, and G. T. Du, “Room temperature electroluminescence from the n-ZnO/p-GaN heterojunction device grown by MOCVD,” Mater. Res. Bull. 43(12), 3614–3620 (2008).
[CrossRef]

Du, G. T.

Z. F. Shi, Y. T. Zhang, X. C. Xia, W. Zhao, H. Wang, L. Zhao, X. Dong, B. L. Zhang, and G. T. Du, “Electrically driven ultraviolet random lasing from an n-MgZnO/i-ZnO/SiO2/p-Si asymmetric double heterojunction,” Nanoscale 5(11), 5080–5085 (2013).
[CrossRef] [PubMed]

Z. F. Shi, Y. T. Zhang, J. X. Zhang, H. Wang, B. Wu, X. P. Cai, X. J. Cui, X. Dong, H. W. Liang, B. L. Zhang, and G. T. Du, “High-performance ultraviolet-blue light-emitting diodes based on an n-ZnO nanowall networks/p-GaN heterojunction,” Appl. Phys. Lett. 103(2), 021109 (2013).
[CrossRef]

T. P. Yang, H. C. Zhu, J. M. Bian, J. C. Sun, X. Dong, B. L. Zhang, H. W. Liang, X. P. Li, Y. G. Cui, and G. T. Du, “Room temperature electroluminescence from the n-ZnO/p-GaN heterojunction device grown by MOCVD,” Mater. Res. Bull. 43(12), 3614–3620 (2008).
[CrossRef]

Eddy, C. R.

Eui, J. K.

M. S. Wang, Y. J. Zhou, Y. P. Zhang, J. K. Eui, H. H. Sung, and G. S. Seung, “Near-infrared photoluminescence from ZnO,” Appl. Phys. Lett. 100(10), 101906 (2012).
[CrossRef]

Fan, X. W.

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in zinc oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[CrossRef]

Fang, G. J.

H. Long, S. Z. Li, X. M. Mo, H. N. Wang, H. H. Huang, Z. Chen, Y. P. Liu, and G. J. Fang, “Electroluminescence from ZnO-nanorod-based double heterostructured light-emitting diodes,” Appl. Phys. Lett. 103(12), 123504 (2013).
[CrossRef]

S. Z. Li, W. W. Lin, G. J. Fang, F. Huang, H. H. Huang, H. Long, X. M. Mo, H. N. Wang, W. J. Guan, and X. Z. Zhao, “Ultraviolet/violet dual-color electroluminescence based on n-ZnO single crystal/p-GaN direct-contact light-emitting diode,” J. Lumin. 140, 110–113 (2013).
[CrossRef]

H. H. Huang, G. J. Fang, X. M. Mo, H. Long, H. N. Wang, S. Z. Li, Y. Li, Y. P. Zhang, C. X. Pan, and D. L. Carroll, “Improved and orange emission from an n-ZnO/p-Si heterojunction light emitting device with NiO as the intermediate layer,” Appl. Phys. Lett. 101(22), 223504 (2012).
[CrossRef]

H. H. Huang, G. J. Fang, Y. Li, S. Z. Li, X. M. Mo, H. Long, H. N. Wang, D. L. Carroll, and X. Z. Zhao, “Improved and color tunable electroluminescence from n-ZnO/HfO2/p-GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 100(23), 233502 (2012).
[CrossRef]

S. Z. Li, G. J. Fang, H. Long, X. M. Mo, H. H. Huang, B. Z. Dong, and X. Z. Zhao, “Enhancement of ultraviolet electroluminescence based on n-ZnO/n-GaN isotype heterojunction with low threshold voltage,” Appl. Phys. Lett. 96(20), 201111 (2010).
[CrossRef]

H. Long, G. J. Fang, H. H. Huang, X. M. Mo, W. Xia, B. Z. Dong, X. Q. Meng, and X. Z. Zhao, “Ultraviolet electroluminescence from ZnO/NiO-based heterojunction light-emitting diodes,” Appl. Phys. Lett. 95(1), 013509 (2009).
[CrossRef]

Grebenshchikova, E. A.

S. V. Ivanov, V. A. Kaygorodov, S. V. Sorokin, B. Y. Meltser, V. A. Solov’ev, Y. V. Terent’ev, O. G. Lyublinskaya, K. D. Moiseev, E. A. Grebenshchikova, M. P. Mikhailova, A. A. Toropov, Y. P. Yakovlev, P. S. Kop’ev, and Z. I. Alferov, “A 2.78-μm laser diode based on hybrid AlGaAsSb/InAs/CdMgSe double heterostructure grown by molecular-beam epitaxy,” Appl. Phys. Lett. 82(21), 3782 (2003).
[CrossRef]

Guan, W. J.

S. Z. Li, W. W. Lin, G. J. Fang, F. Huang, H. H. Huang, H. Long, X. M. Mo, H. N. Wang, W. J. Guan, and X. Z. Zhao, “Ultraviolet/violet dual-color electroluminescence based on n-ZnO single crystal/p-GaN direct-contact light-emitting diode,” J. Lumin. 140, 110–113 (2013).
[CrossRef]

He, J. H.

Hirano, M.

H. Ohta, K.-i. Kawamura, M. Orita, M. Hirano, N. Sarukura, and H. Hosono, “Current injection emission from a transparent p–n junction composed of p-SrCu2O2/n-ZnO,” Appl. Phys. Lett. 77(4), 475–477 (2000).
[CrossRef]

Hite, J. K.

Hosono, H.

H. Ohta, K.-i. Kawamura, M. Orita, M. Hirano, N. Sarukura, and H. Hosono, “Current injection emission from a transparent p–n junction composed of p-SrCu2O2/n-ZnO,” Appl. Phys. Lett. 77(4), 475–477 (2000).
[CrossRef]

Huang, F.

S. Z. Li, W. W. Lin, G. J. Fang, F. Huang, H. H. Huang, H. Long, X. M. Mo, H. N. Wang, W. J. Guan, and X. Z. Zhao, “Ultraviolet/violet dual-color electroluminescence based on n-ZnO single crystal/p-GaN direct-contact light-emitting diode,” J. Lumin. 140, 110–113 (2013).
[CrossRef]

Huang, H. H.

S. Z. Li, W. W. Lin, G. J. Fang, F. Huang, H. H. Huang, H. Long, X. M. Mo, H. N. Wang, W. J. Guan, and X. Z. Zhao, “Ultraviolet/violet dual-color electroluminescence based on n-ZnO single crystal/p-GaN direct-contact light-emitting diode,” J. Lumin. 140, 110–113 (2013).
[CrossRef]

H. Long, S. Z. Li, X. M. Mo, H. N. Wang, H. H. Huang, Z. Chen, Y. P. Liu, and G. J. Fang, “Electroluminescence from ZnO-nanorod-based double heterostructured light-emitting diodes,” Appl. Phys. Lett. 103(12), 123504 (2013).
[CrossRef]

H. H. Huang, G. J. Fang, X. M. Mo, H. Long, H. N. Wang, S. Z. Li, Y. Li, Y. P. Zhang, C. X. Pan, and D. L. Carroll, “Improved and orange emission from an n-ZnO/p-Si heterojunction light emitting device with NiO as the intermediate layer,” Appl. Phys. Lett. 101(22), 223504 (2012).
[CrossRef]

H. H. Huang, G. J. Fang, Y. Li, S. Z. Li, X. M. Mo, H. Long, H. N. Wang, D. L. Carroll, and X. Z. Zhao, “Improved and color tunable electroluminescence from n-ZnO/HfO2/p-GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 100(23), 233502 (2012).
[CrossRef]

S. Z. Li, G. J. Fang, H. Long, X. M. Mo, H. H. Huang, B. Z. Dong, and X. Z. Zhao, “Enhancement of ultraviolet electroluminescence based on n-ZnO/n-GaN isotype heterojunction with low threshold voltage,” Appl. Phys. Lett. 96(20), 201111 (2010).
[CrossRef]

H. Long, G. J. Fang, H. H. Huang, X. M. Mo, W. Xia, B. Z. Dong, X. Q. Meng, and X. Z. Zhao, “Ultraviolet electroluminescence from ZnO/NiO-based heterojunction light-emitting diodes,” Appl. Phys. Lett. 95(1), 013509 (2009).
[CrossRef]

Huang, J. J.

M. Y. Ke, T. C. Lu, S. C. Yang, C. P. Chen, Y. W. Cheng, L. Y. Chen, C. Y. Chen, J. H. He, and J. J. Huang, “UV light emission from GZO/ZnO/GaN heterojunction diodes with carrier confinement layers,” Opt. Express 17(25), 22912–22917 (2009).
[CrossRef] [PubMed]

C. P. Chen, M. Y. Ke, C. C. Liu, Y. J. Chang, F. H. Yang, and J. J. Huang, “Observation of 394 nm electroluminescence from low-temperature sputtered n-ZnO∕SiO2 thin films on top of the p-GaN heterostructure,” Appl. Phys. Lett. 91(9), 091107 (2007).
[CrossRef]

Huang, R. Z.

L. C. Zhang, Q. S. Li, L. Shang, Z. J. Zhang, R. Z. Huang, and F. Z. Zhao, “Electroluminescence from n-ZnO : Ga/p-GaN heterojunction light-emitting diodes with different interfacial layers,” J. Phys. D Appl. Phys. 45(48), 485103 (2012).
[CrossRef]

Hwang, D. K.

Y. S. Choi, J. W. Kang, D. K. Hwang, and S. J. Park, “Recent advances in ZnO-based light-emitting diodes,” IEEE Trans. Electron. Dev. 57(1), 26–41 (2010).
[CrossRef]

Ivanov, S. V.

S. V. Ivanov, V. A. Kaygorodov, S. V. Sorokin, B. Y. Meltser, V. A. Solov’ev, Y. V. Terent’ev, O. G. Lyublinskaya, K. D. Moiseev, E. A. Grebenshchikova, M. P. Mikhailova, A. A. Toropov, Y. P. Yakovlev, P. S. Kop’ev, and Z. I. Alferov, “A 2.78-μm laser diode based on hybrid AlGaAsSb/InAs/CdMgSe double heterostructure grown by molecular-beam epitaxy,” Appl. Phys. Lett. 82(21), 3782 (2003).
[CrossRef]

S. V. Ivanov, V. A. Solov’ev, K. D. Moiseev, I. V. Sedova, Y. V. Terent’ev, A. A. Toropov, B. Y. Meltzer, M. P. Mikhailova, Y. P. Yakovlev, and P. S. Kop’ev, “Room-temperature midinfrared electroluminescence from asymmetric AlSbAs/InAs/CdMgSe heterostructures grown by molecular beam epitaxy,” Appl. Phys. Lett. 78(12), 1655 (2001).
[CrossRef]

Jiao, C.

Kalinina, E. V.

Y. I. Alivov, E. V. Kalinina, A. E. Cherenkov, D. C. Look, B. M. Ataev, A. K. Omaev, M. V. Chukichev, and D. M. Bagnall, “Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates,” Appl. Phys. Lett. 83(23), 4719–4721 (2003).
[CrossRef]

Kang, J. W.

Y. S. Choi, J. W. Kang, D. K. Hwang, and S. J. Park, “Recent advances in ZnO-based light-emitting diodes,” IEEE Trans. Electron. Dev. 57(1), 26–41 (2010).
[CrossRef]

Kawamura, K.-i.

H. Ohta, K.-i. Kawamura, M. Orita, M. Hirano, N. Sarukura, and H. Hosono, “Current injection emission from a transparent p–n junction composed of p-SrCu2O2/n-ZnO,” Appl. Phys. Lett. 77(4), 475–477 (2000).
[CrossRef]

Kaygorodov, V. A.

S. V. Ivanov, V. A. Kaygorodov, S. V. Sorokin, B. Y. Meltser, V. A. Solov’ev, Y. V. Terent’ev, O. G. Lyublinskaya, K. D. Moiseev, E. A. Grebenshchikova, M. P. Mikhailova, A. A. Toropov, Y. P. Yakovlev, P. S. Kop’ev, and Z. I. Alferov, “A 2.78-μm laser diode based on hybrid AlGaAsSb/InAs/CdMgSe double heterostructure grown by molecular-beam epitaxy,” Appl. Phys. Lett. 82(21), 3782 (2003).
[CrossRef]

Ke, M. Y.

M. Y. Ke, T. C. Lu, S. C. Yang, C. P. Chen, Y. W. Cheng, L. Y. Chen, C. Y. Chen, J. H. He, and J. J. Huang, “UV light emission from GZO/ZnO/GaN heterojunction diodes with carrier confinement layers,” Opt. Express 17(25), 22912–22917 (2009).
[CrossRef] [PubMed]

C. P. Chen, M. Y. Ke, C. C. Liu, Y. J. Chang, F. H. Yang, and J. J. Huang, “Observation of 394 nm electroluminescence from low-temperature sputtered n-ZnO∕SiO2 thin films on top of the p-GaN heterostructure,” Appl. Phys. Lett. 91(9), 091107 (2007).
[CrossRef]

Kim, D. C.

C. H. Ahn, Y. Y. Kim, D. C. Kim, S. K. Mohanta, and H. K. Cho, “A comparative analysis of deep level emission in ZnO layers deposited by various methods,” J. Appl. Phys. 105(1), 013502 (2009).
[CrossRef]

Kim, J.

Kim, Y. Y.

C. H. Ahn, Y. Y. Kim, D. C. Kim, S. K. Mohanta, and H. K. Cho, “A comparative analysis of deep level emission in ZnO layers deposited by various methods,” J. Appl. Phys. 105(1), 013502 (2009).
[CrossRef]

Könenkamp, R.

A. Nadarajah, R. C. Word, J. Meiss, and R. Könenkamp, “Flexible inorganic nanowire light-emitting diode,” Nano Lett. 8(2), 534–537 (2008).
[CrossRef] [PubMed]

Kong, J. Y.

S. Chu, J. Z. Zhao, Z. Zuo, J. Y. Kong, L. Li, and J. L. Liu, “Enhanced output power using MgZnO/ZnO/MgZnO double heterostructure in ZnO homojunction light emitting diode,” J. Appl. Phys. 109(12), 123110 (2011).
[CrossRef]

Kop’ev, P. S.

S. V. Ivanov, V. A. Kaygorodov, S. V. Sorokin, B. Y. Meltser, V. A. Solov’ev, Y. V. Terent’ev, O. G. Lyublinskaya, K. D. Moiseev, E. A. Grebenshchikova, M. P. Mikhailova, A. A. Toropov, Y. P. Yakovlev, P. S. Kop’ev, and Z. I. Alferov, “A 2.78-μm laser diode based on hybrid AlGaAsSb/InAs/CdMgSe double heterostructure grown by molecular-beam epitaxy,” Appl. Phys. Lett. 82(21), 3782 (2003).
[CrossRef]

S. V. Ivanov, V. A. Solov’ev, K. D. Moiseev, I. V. Sedova, Y. V. Terent’ev, A. A. Toropov, B. Y. Meltzer, M. P. Mikhailova, Y. P. Yakovlev, and P. S. Kop’ev, “Room-temperature midinfrared electroluminescence from asymmetric AlSbAs/InAs/CdMgSe heterostructures grown by molecular beam epitaxy,” Appl. Phys. Lett. 78(12), 1655 (2001).
[CrossRef]

Koyama, T.

S. F. Chichibu, T. Ohmori, N. Shibata, T. Koyama, and T. Onuma, “Greenish-white electroluminescence from p-type CuGaS2 heterojunction diodes using n-type ZnO as an electron injector,” Appl. Phys. Lett. 85(19), 4403–4405 (2004).
[CrossRef]

Lee, C. T.

P. C. Wu, H. Y. Lee, and C. T. Lee, “Enhanced light emission of double heterostructured MgZnO/ZnO/MgZnO in ultraviolet blind light-emitting diodes deposited by vapor cooling condensation system,” Appl. Phys. Lett. 100(13), 131116 (2012).
[CrossRef]

Lee, H. Y.

P. C. Wu, H. Y. Lee, and C. T. Lee, “Enhanced light emission of double heterostructured MgZnO/ZnO/MgZnO in ultraviolet blind light-emitting diodes deposited by vapor cooling condensation system,” Appl. Phys. Lett. 100(13), 131116 (2012).
[CrossRef]

Li, B. H.

J. S. Liu, C. X. Shan, H. Shen, B. H. Li, Z. Z. Zhang, L. Liu, L. G. Zhang, and D. Z. Shen, “ZnO light-emitting devices with a lifetime of 6.8 hours,” Appl. Phys. Lett. 101(1), 011106 (2012).
[CrossRef]

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in zinc oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[CrossRef]

Li, L.

S. Chu, J. Z. Zhao, Z. Zuo, J. Y. Kong, L. Li, and J. L. Liu, “Enhanced output power using MgZnO/ZnO/MgZnO double heterostructure in ZnO homojunction light emitting diode,” J. Appl. Phys. 109(12), 123110 (2011).
[CrossRef]

Li, Q. S.

L. C. Zhang, Q. S. Li, L. Shang, F. F. Wang, C. Qu, and F. Z. Zhao, “Improvement of UV electroluminescence of n-ZnO/p-GaN heterojunction LED by ZnS interlayer,” Opt. Express 21(14), 16578–16583 (2013).
[CrossRef] [PubMed]

L. C. Zhang, Q. S. Li, L. Shang, Z. J. Zhang, R. Z. Huang, and F. Z. Zhao, “Electroluminescence from n-ZnO : Ga/p-GaN heterojunction light-emitting diodes with different interfacial layers,” J. Phys. D Appl. Phys. 45(48), 485103 (2012).
[CrossRef]

Li, S. Z.

H. Long, S. Z. Li, X. M. Mo, H. N. Wang, H. H. Huang, Z. Chen, Y. P. Liu, and G. J. Fang, “Electroluminescence from ZnO-nanorod-based double heterostructured light-emitting diodes,” Appl. Phys. Lett. 103(12), 123504 (2013).
[CrossRef]

S. Z. Li, W. W. Lin, G. J. Fang, F. Huang, H. H. Huang, H. Long, X. M. Mo, H. N. Wang, W. J. Guan, and X. Z. Zhao, “Ultraviolet/violet dual-color electroluminescence based on n-ZnO single crystal/p-GaN direct-contact light-emitting diode,” J. Lumin. 140, 110–113 (2013).
[CrossRef]

H. H. Huang, G. J. Fang, X. M. Mo, H. Long, H. N. Wang, S. Z. Li, Y. Li, Y. P. Zhang, C. X. Pan, and D. L. Carroll, “Improved and orange emission from an n-ZnO/p-Si heterojunction light emitting device with NiO as the intermediate layer,” Appl. Phys. Lett. 101(22), 223504 (2012).
[CrossRef]

H. H. Huang, G. J. Fang, Y. Li, S. Z. Li, X. M. Mo, H. Long, H. N. Wang, D. L. Carroll, and X. Z. Zhao, “Improved and color tunable electroluminescence from n-ZnO/HfO2/p-GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 100(23), 233502 (2012).
[CrossRef]

S. Z. Li, G. J. Fang, H. Long, X. M. Mo, H. H. Huang, B. Z. Dong, and X. Z. Zhao, “Enhancement of ultraviolet electroluminescence based on n-ZnO/n-GaN isotype heterojunction with low threshold voltage,” Appl. Phys. Lett. 96(20), 201111 (2010).
[CrossRef]

Li, X. P.

T. P. Yang, H. C. Zhu, J. M. Bian, J. C. Sun, X. Dong, B. L. Zhang, H. W. Liang, X. P. Li, Y. G. Cui, and G. T. Du, “Room temperature electroluminescence from the n-ZnO/p-GaN heterojunction device grown by MOCVD,” Mater. Res. Bull. 43(12), 3614–3620 (2008).
[CrossRef]

Li, Y.

H. H. Huang, G. J. Fang, X. M. Mo, H. Long, H. N. Wang, S. Z. Li, Y. Li, Y. P. Zhang, C. X. Pan, and D. L. Carroll, “Improved and orange emission from an n-ZnO/p-Si heterojunction light emitting device with NiO as the intermediate layer,” Appl. Phys. Lett. 101(22), 223504 (2012).
[CrossRef]

H. H. Huang, G. J. Fang, Y. Li, S. Z. Li, X. M. Mo, H. Long, H. N. Wang, D. L. Carroll, and X. Z. Zhao, “Improved and color tunable electroluminescence from n-ZnO/HfO2/p-GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 100(23), 233502 (2012).
[CrossRef]

Li, Y. P.

Y. Yang, Y. P. Li, L. L. Xiang, X. Y. Ma, and D. R. Yang, “Low-voltage driven ∼1.54 μm electroluminescence from erbium-doped ZnO/p+-Si heterostructured devices: Energy transfer from ZnO host to erbium ions,” Appl. Phys. Lett. 102(18), 181111 (2013).
[CrossRef]

Liang, H. W.

Z. F. Shi, Y. T. Zhang, J. X. Zhang, H. Wang, B. Wu, X. P. Cai, X. J. Cui, X. Dong, H. W. Liang, B. L. Zhang, and G. T. Du, “High-performance ultraviolet-blue light-emitting diodes based on an n-ZnO nanowall networks/p-GaN heterojunction,” Appl. Phys. Lett. 103(2), 021109 (2013).
[CrossRef]

T. P. Yang, H. C. Zhu, J. M. Bian, J. C. Sun, X. Dong, B. L. Zhang, H. W. Liang, X. P. Li, Y. G. Cui, and G. T. Du, “Room temperature electroluminescence from the n-ZnO/p-GaN heterojunction device grown by MOCVD,” Mater. Res. Bull. 43(12), 3614–3620 (2008).
[CrossRef]

Lin, W. W.

S. Z. Li, W. W. Lin, G. J. Fang, F. Huang, H. H. Huang, H. Long, X. M. Mo, H. N. Wang, W. J. Guan, and X. Z. Zhao, “Ultraviolet/violet dual-color electroluminescence based on n-ZnO single crystal/p-GaN direct-contact light-emitting diode,” J. Lumin. 140, 110–113 (2013).
[CrossRef]

Liu, C. C.

C. P. Chen, M. Y. Ke, C. C. Liu, Y. J. Chang, F. H. Yang, and J. J. Huang, “Observation of 394 nm electroluminescence from low-temperature sputtered n-ZnO∕SiO2 thin films on top of the p-GaN heterostructure,” Appl. Phys. Lett. 91(9), 091107 (2007).
[CrossRef]

Liu, J. L.

S. Chu, J. Z. Zhao, Z. Zuo, J. Y. Kong, L. Li, and J. L. Liu, “Enhanced output power using MgZnO/ZnO/MgZnO double heterostructure in ZnO homojunction light emitting diode,” J. Appl. Phys. 109(12), 123110 (2011).
[CrossRef]

Liu, J. S.

J. S. Liu, C. X. Shan, H. Shen, B. H. Li, Z. Z. Zhang, L. Liu, L. G. Zhang, and D. Z. Shen, “ZnO light-emitting devices with a lifetime of 6.8 hours,” Appl. Phys. Lett. 101(1), 011106 (2012).
[CrossRef]

Liu, L.

J. S. Liu, C. X. Shan, H. Shen, B. H. Li, Z. Z. Zhang, L. Liu, L. G. Zhang, and D. Z. Shen, “ZnO light-emitting devices with a lifetime of 6.8 hours,” Appl. Phys. Lett. 101(1), 011106 (2012).
[CrossRef]

Liu, X. Y.

Liu, Y. P.

H. Long, S. Z. Li, X. M. Mo, H. N. Wang, H. H. Huang, Z. Chen, Y. P. Liu, and G. J. Fang, “Electroluminescence from ZnO-nanorod-based double heterostructured light-emitting diodes,” Appl. Phys. Lett. 103(12), 123504 (2013).
[CrossRef]

Long, H.

H. Long, S. Z. Li, X. M. Mo, H. N. Wang, H. H. Huang, Z. Chen, Y. P. Liu, and G. J. Fang, “Electroluminescence from ZnO-nanorod-based double heterostructured light-emitting diodes,” Appl. Phys. Lett. 103(12), 123504 (2013).
[CrossRef]

S. Z. Li, W. W. Lin, G. J. Fang, F. Huang, H. H. Huang, H. Long, X. M. Mo, H. N. Wang, W. J. Guan, and X. Z. Zhao, “Ultraviolet/violet dual-color electroluminescence based on n-ZnO single crystal/p-GaN direct-contact light-emitting diode,” J. Lumin. 140, 110–113 (2013).
[CrossRef]

H. H. Huang, G. J. Fang, X. M. Mo, H. Long, H. N. Wang, S. Z. Li, Y. Li, Y. P. Zhang, C. X. Pan, and D. L. Carroll, “Improved and orange emission from an n-ZnO/p-Si heterojunction light emitting device with NiO as the intermediate layer,” Appl. Phys. Lett. 101(22), 223504 (2012).
[CrossRef]

H. H. Huang, G. J. Fang, Y. Li, S. Z. Li, X. M. Mo, H. Long, H. N. Wang, D. L. Carroll, and X. Z. Zhao, “Improved and color tunable electroluminescence from n-ZnO/HfO2/p-GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 100(23), 233502 (2012).
[CrossRef]

S. Z. Li, G. J. Fang, H. Long, X. M. Mo, H. H. Huang, B. Z. Dong, and X. Z. Zhao, “Enhancement of ultraviolet electroluminescence based on n-ZnO/n-GaN isotype heterojunction with low threshold voltage,” Appl. Phys. Lett. 96(20), 201111 (2010).
[CrossRef]

H. Long, G. J. Fang, H. H. Huang, X. M. Mo, W. Xia, B. Z. Dong, X. Q. Meng, and X. Z. Zhao, “Ultraviolet electroluminescence from ZnO/NiO-based heterojunction light-emitting diodes,” Appl. Phys. Lett. 95(1), 013509 (2009).
[CrossRef]

Look, D. C.

Y. I. Alivov, E. V. Kalinina, A. E. Cherenkov, D. C. Look, B. M. Ataev, A. K. Omaev, M. V. Chukichev, and D. M. Bagnall, “Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates,” Appl. Phys. Lett. 83(23), 4719–4721 (2003).
[CrossRef]

Lu, T. C.

Lu, Y. M.

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in zinc oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[CrossRef]

Lyublinskaya, O. G.

S. V. Ivanov, V. A. Kaygorodov, S. V. Sorokin, B. Y. Meltser, V. A. Solov’ev, Y. V. Terent’ev, O. G. Lyublinskaya, K. D. Moiseev, E. A. Grebenshchikova, M. P. Mikhailova, A. A. Toropov, Y. P. Yakovlev, P. S. Kop’ev, and Z. I. Alferov, “A 2.78-μm laser diode based on hybrid AlGaAsSb/InAs/CdMgSe double heterostructure grown by molecular-beam epitaxy,” Appl. Phys. Lett. 82(21), 3782 (2003).
[CrossRef]

Ma, X. Y.

Y. Yang, Y. P. Li, L. L. Xiang, X. Y. Ma, and D. R. Yang, “Low-voltage driven ∼1.54 μm electroluminescence from erbium-doped ZnO/p+-Si heterostructured devices: Energy transfer from ZnO host to erbium ions,” Appl. Phys. Lett. 102(18), 181111 (2013).
[CrossRef]

Mastro, M. A.

Meiss, J.

A. Nadarajah, R. C. Word, J. Meiss, and R. Könenkamp, “Flexible inorganic nanowire light-emitting diode,” Nano Lett. 8(2), 534–537 (2008).
[CrossRef] [PubMed]

Meltser, B. Y.

S. V. Ivanov, V. A. Kaygorodov, S. V. Sorokin, B. Y. Meltser, V. A. Solov’ev, Y. V. Terent’ev, O. G. Lyublinskaya, K. D. Moiseev, E. A. Grebenshchikova, M. P. Mikhailova, A. A. Toropov, Y. P. Yakovlev, P. S. Kop’ev, and Z. I. Alferov, “A 2.78-μm laser diode based on hybrid AlGaAsSb/InAs/CdMgSe double heterostructure grown by molecular-beam epitaxy,” Appl. Phys. Lett. 82(21), 3782 (2003).
[CrossRef]

Meltzer, B. Y.

S. V. Ivanov, V. A. Solov’ev, K. D. Moiseev, I. V. Sedova, Y. V. Terent’ev, A. A. Toropov, B. Y. Meltzer, M. P. Mikhailova, Y. P. Yakovlev, and P. S. Kop’ev, “Room-temperature midinfrared electroluminescence from asymmetric AlSbAs/InAs/CdMgSe heterostructures grown by molecular beam epitaxy,” Appl. Phys. Lett. 78(12), 1655 (2001).
[CrossRef]

Meng, X. Q.

H. Long, G. J. Fang, H. H. Huang, X. M. Mo, W. Xia, B. Z. Dong, X. Q. Meng, and X. Z. Zhao, “Ultraviolet electroluminescence from ZnO/NiO-based heterojunction light-emitting diodes,” Appl. Phys. Lett. 95(1), 013509 (2009).
[CrossRef]

Mikhailova, M. P.

S. V. Ivanov, V. A. Kaygorodov, S. V. Sorokin, B. Y. Meltser, V. A. Solov’ev, Y. V. Terent’ev, O. G. Lyublinskaya, K. D. Moiseev, E. A. Grebenshchikova, M. P. Mikhailova, A. A. Toropov, Y. P. Yakovlev, P. S. Kop’ev, and Z. I. Alferov, “A 2.78-μm laser diode based on hybrid AlGaAsSb/InAs/CdMgSe double heterostructure grown by molecular-beam epitaxy,” Appl. Phys. Lett. 82(21), 3782 (2003).
[CrossRef]

S. V. Ivanov, V. A. Solov’ev, K. D. Moiseev, I. V. Sedova, Y. V. Terent’ev, A. A. Toropov, B. Y. Meltzer, M. P. Mikhailova, Y. P. Yakovlev, and P. S. Kop’ev, “Room-temperature midinfrared electroluminescence from asymmetric AlSbAs/InAs/CdMgSe heterostructures grown by molecular beam epitaxy,” Appl. Phys. Lett. 78(12), 1655 (2001).
[CrossRef]

Miyazaki, S.

S. Miyazaki, “Photoemission study of energy-band alignments and gap-state density distributions for high-k gate dielectrics,” J. Vac. Sci. Technol. B 19(6), 2212 (2001).
[CrossRef]

Mo, X. M.

S. Z. Li, W. W. Lin, G. J. Fang, F. Huang, H. H. Huang, H. Long, X. M. Mo, H. N. Wang, W. J. Guan, and X. Z. Zhao, “Ultraviolet/violet dual-color electroluminescence based on n-ZnO single crystal/p-GaN direct-contact light-emitting diode,” J. Lumin. 140, 110–113 (2013).
[CrossRef]

H. Long, S. Z. Li, X. M. Mo, H. N. Wang, H. H. Huang, Z. Chen, Y. P. Liu, and G. J. Fang, “Electroluminescence from ZnO-nanorod-based double heterostructured light-emitting diodes,” Appl. Phys. Lett. 103(12), 123504 (2013).
[CrossRef]

H. H. Huang, G. J. Fang, X. M. Mo, H. Long, H. N. Wang, S. Z. Li, Y. Li, Y. P. Zhang, C. X. Pan, and D. L. Carroll, “Improved and orange emission from an n-ZnO/p-Si heterojunction light emitting device with NiO as the intermediate layer,” Appl. Phys. Lett. 101(22), 223504 (2012).
[CrossRef]

H. H. Huang, G. J. Fang, Y. Li, S. Z. Li, X. M. Mo, H. Long, H. N. Wang, D. L. Carroll, and X. Z. Zhao, “Improved and color tunable electroluminescence from n-ZnO/HfO2/p-GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 100(23), 233502 (2012).
[CrossRef]

S. Z. Li, G. J. Fang, H. Long, X. M. Mo, H. H. Huang, B. Z. Dong, and X. Z. Zhao, “Enhancement of ultraviolet electroluminescence based on n-ZnO/n-GaN isotype heterojunction with low threshold voltage,” Appl. Phys. Lett. 96(20), 201111 (2010).
[CrossRef]

H. Long, G. J. Fang, H. H. Huang, X. M. Mo, W. Xia, B. Z. Dong, X. Q. Meng, and X. Z. Zhao, “Ultraviolet electroluminescence from ZnO/NiO-based heterojunction light-emitting diodes,” Appl. Phys. Lett. 95(1), 013509 (2009).
[CrossRef]

Mohanta, S. K.

C. H. Ahn, Y. Y. Kim, D. C. Kim, S. K. Mohanta, and H. K. Cho, “A comparative analysis of deep level emission in ZnO layers deposited by various methods,” J. Appl. Phys. 105(1), 013502 (2009).
[CrossRef]

Moiseev, K. D.

S. V. Ivanov, V. A. Kaygorodov, S. V. Sorokin, B. Y. Meltser, V. A. Solov’ev, Y. V. Terent’ev, O. G. Lyublinskaya, K. D. Moiseev, E. A. Grebenshchikova, M. P. Mikhailova, A. A. Toropov, Y. P. Yakovlev, P. S. Kop’ev, and Z. I. Alferov, “A 2.78-μm laser diode based on hybrid AlGaAsSb/InAs/CdMgSe double heterostructure grown by molecular-beam epitaxy,” Appl. Phys. Lett. 82(21), 3782 (2003).
[CrossRef]

S. V. Ivanov, V. A. Solov’ev, K. D. Moiseev, I. V. Sedova, Y. V. Terent’ev, A. A. Toropov, B. Y. Meltzer, M. P. Mikhailova, Y. P. Yakovlev, and P. S. Kop’ev, “Room-temperature midinfrared electroluminescence from asymmetric AlSbAs/InAs/CdMgSe heterostructures grown by molecular beam epitaxy,” Appl. Phys. Lett. 78(12), 1655 (2001).
[CrossRef]

Nadarajah, A.

A. Nadarajah, R. C. Word, J. Meiss, and R. Könenkamp, “Flexible inorganic nanowire light-emitting diode,” Nano Lett. 8(2), 534–537 (2008).
[CrossRef] [PubMed]

Nakamura, S.

S. Pimputkar, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Prospects for LED lighting,” Nat. Photonics 3(4), 180–182 (2009).
[CrossRef]

Nur, O.

N. H. Alvi, K. Ul Hasan, O. Nur, and M. Willander, “The origin of the red emission in n-ZnO nanotubes/p-GaN white light emitting diodes,” Nanoscale Res. Lett. 6(1), 130 (2011).
[CrossRef] [PubMed]

Ogino, T.

T. Ogino and M. Aoki, “Mechanism of yellow luminescence in GaN,” Jpn. J. Appl. Phys. 19(12), 2395–2405 (1980).
[CrossRef]

Ohmori, T.

S. F. Chichibu, T. Ohmori, N. Shibata, T. Koyama, and T. Onuma, “Greenish-white electroluminescence from p-type CuGaS2 heterojunction diodes using n-type ZnO as an electron injector,” Appl. Phys. Lett. 85(19), 4403–4405 (2004).
[CrossRef]

Ohta, H.

H. Ohta, K.-i. Kawamura, M. Orita, M. Hirano, N. Sarukura, and H. Hosono, “Current injection emission from a transparent p–n junction composed of p-SrCu2O2/n-ZnO,” Appl. Phys. Lett. 77(4), 475–477 (2000).
[CrossRef]

Omaev, A. K.

Y. I. Alivov, E. V. Kalinina, A. E. Cherenkov, D. C. Look, B. M. Ataev, A. K. Omaev, M. V. Chukichev, and D. M. Bagnall, “Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates,” Appl. Phys. Lett. 83(23), 4719–4721 (2003).
[CrossRef]

Onuma, T.

S. F. Chichibu, T. Ohmori, N. Shibata, T. Koyama, and T. Onuma, “Greenish-white electroluminescence from p-type CuGaS2 heterojunction diodes using n-type ZnO as an electron injector,” Appl. Phys. Lett. 85(19), 4403–4405 (2004).
[CrossRef]

Orita, M.

H. Ohta, K.-i. Kawamura, M. Orita, M. Hirano, N. Sarukura, and H. Hosono, “Current injection emission from a transparent p–n junction composed of p-SrCu2O2/n-ZnO,” Appl. Phys. Lett. 77(4), 475–477 (2000).
[CrossRef]

Pan, C. X.

H. H. Huang, G. J. Fang, X. M. Mo, H. Long, H. N. Wang, S. Z. Li, Y. Li, Y. P. Zhang, C. X. Pan, and D. L. Carroll, “Improved and orange emission from an n-ZnO/p-Si heterojunction light emitting device with NiO as the intermediate layer,” Appl. Phys. Lett. 101(22), 223504 (2012).
[CrossRef]

Park, H.

Park, S. J.

Y. S. Choi, J. W. Kang, D. K. Hwang, and S. J. Park, “Recent advances in ZnO-based light-emitting diodes,” IEEE Trans. Electron. Dev. 57(1), 26–41 (2010).
[CrossRef]

Pimputkar, S.

S. Pimputkar, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Prospects for LED lighting,” Nat. Photonics 3(4), 180–182 (2009).
[CrossRef]

Qu, C.

Sarukura, N.

H. Ohta, K.-i. Kawamura, M. Orita, M. Hirano, N. Sarukura, and H. Hosono, “Current injection emission from a transparent p–n junction composed of p-SrCu2O2/n-ZnO,” Appl. Phys. Lett. 77(4), 475–477 (2000).
[CrossRef]

Sedova, I. V.

S. V. Ivanov, V. A. Solov’ev, K. D. Moiseev, I. V. Sedova, Y. V. Terent’ev, A. A. Toropov, B. Y. Meltzer, M. P. Mikhailova, Y. P. Yakovlev, and P. S. Kop’ev, “Room-temperature midinfrared electroluminescence from asymmetric AlSbAs/InAs/CdMgSe heterostructures grown by molecular beam epitaxy,” Appl. Phys. Lett. 78(12), 1655 (2001).
[CrossRef]

Seung, G. S.

M. S. Wang, Y. J. Zhou, Y. P. Zhang, J. K. Eui, H. H. Sung, and G. S. Seung, “Near-infrared photoluminescence from ZnO,” Appl. Phys. Lett. 100(10), 101906 (2012).
[CrossRef]

Shan, C. X.

X. Y. Liu, C. X. Shan, C. Jiao, S. P. Wang, H. F. Zhao, and D. Z. Shen, “Pure ultraviolet emission from ZnO nanowire-based p-n heterostructures,” Opt. Lett. 39(3), 422–425 (2014).
[CrossRef] [PubMed]

J. S. Liu, C. X. Shan, H. Shen, B. H. Li, Z. Z. Zhang, L. Liu, L. G. Zhang, and D. Z. Shen, “ZnO light-emitting devices with a lifetime of 6.8 hours,” Appl. Phys. Lett. 101(1), 011106 (2012).
[CrossRef]

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in zinc oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[CrossRef]

Shang, L.

L. C. Zhang, Q. S. Li, L. Shang, F. F. Wang, C. Qu, and F. Z. Zhao, “Improvement of UV electroluminescence of n-ZnO/p-GaN heterojunction LED by ZnS interlayer,” Opt. Express 21(14), 16578–16583 (2013).
[CrossRef] [PubMed]

L. C. Zhang, Q. S. Li, L. Shang, Z. J. Zhang, R. Z. Huang, and F. Z. Zhao, “Electroluminescence from n-ZnO : Ga/p-GaN heterojunction light-emitting diodes with different interfacial layers,” J. Phys. D Appl. Phys. 45(48), 485103 (2012).
[CrossRef]

Shen, D. Z.

X. Y. Liu, C. X. Shan, C. Jiao, S. P. Wang, H. F. Zhao, and D. Z. Shen, “Pure ultraviolet emission from ZnO nanowire-based p-n heterostructures,” Opt. Lett. 39(3), 422–425 (2014).
[CrossRef] [PubMed]

J. S. Liu, C. X. Shan, H. Shen, B. H. Li, Z. Z. Zhang, L. Liu, L. G. Zhang, and D. Z. Shen, “ZnO light-emitting devices with a lifetime of 6.8 hours,” Appl. Phys. Lett. 101(1), 011106 (2012).
[CrossRef]

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in zinc oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[CrossRef]

Shen, H.

J. S. Liu, C. X. Shan, H. Shen, B. H. Li, Z. Z. Zhang, L. Liu, L. G. Zhang, and D. Z. Shen, “ZnO light-emitting devices with a lifetime of 6.8 hours,” Appl. Phys. Lett. 101(1), 011106 (2012).
[CrossRef]

Shi, Z. F.

Z. F. Shi, Y. T. Zhang, J. X. Zhang, H. Wang, B. Wu, X. P. Cai, X. J. Cui, X. Dong, H. W. Liang, B. L. Zhang, and G. T. Du, “High-performance ultraviolet-blue light-emitting diodes based on an n-ZnO nanowall networks/p-GaN heterojunction,” Appl. Phys. Lett. 103(2), 021109 (2013).
[CrossRef]

Z. F. Shi, Y. T. Zhang, X. C. Xia, W. Zhao, H. Wang, L. Zhao, X. Dong, B. L. Zhang, and G. T. Du, “Electrically driven ultraviolet random lasing from an n-MgZnO/i-ZnO/SiO2/p-Si asymmetric double heterojunction,” Nanoscale 5(11), 5080–5085 (2013).
[CrossRef] [PubMed]

Shibata, N.

S. F. Chichibu, T. Ohmori, N. Shibata, T. Koyama, and T. Onuma, “Greenish-white electroluminescence from p-type CuGaS2 heterojunction diodes using n-type ZnO as an electron injector,” Appl. Phys. Lett. 85(19), 4403–4405 (2004).
[CrossRef]

Solov’ev, V. A.

S. V. Ivanov, V. A. Kaygorodov, S. V. Sorokin, B. Y. Meltser, V. A. Solov’ev, Y. V. Terent’ev, O. G. Lyublinskaya, K. D. Moiseev, E. A. Grebenshchikova, M. P. Mikhailova, A. A. Toropov, Y. P. Yakovlev, P. S. Kop’ev, and Z. I. Alferov, “A 2.78-μm laser diode based on hybrid AlGaAsSb/InAs/CdMgSe double heterostructure grown by molecular-beam epitaxy,” Appl. Phys. Lett. 82(21), 3782 (2003).
[CrossRef]

S. V. Ivanov, V. A. Solov’ev, K. D. Moiseev, I. V. Sedova, Y. V. Terent’ev, A. A. Toropov, B. Y. Meltzer, M. P. Mikhailova, Y. P. Yakovlev, and P. S. Kop’ev, “Room-temperature midinfrared electroluminescence from asymmetric AlSbAs/InAs/CdMgSe heterostructures grown by molecular beam epitaxy,” Appl. Phys. Lett. 78(12), 1655 (2001).
[CrossRef]

Sorokin, S. V.

S. V. Ivanov, V. A. Kaygorodov, S. V. Sorokin, B. Y. Meltser, V. A. Solov’ev, Y. V. Terent’ev, O. G. Lyublinskaya, K. D. Moiseev, E. A. Grebenshchikova, M. P. Mikhailova, A. A. Toropov, Y. P. Yakovlev, P. S. Kop’ev, and Z. I. Alferov, “A 2.78-μm laser diode based on hybrid AlGaAsSb/InAs/CdMgSe double heterostructure grown by molecular-beam epitaxy,” Appl. Phys. Lett. 82(21), 3782 (2003).
[CrossRef]

Speck, J. S.

S. Pimputkar, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Prospects for LED lighting,” Nat. Photonics 3(4), 180–182 (2009).
[CrossRef]

Su, W.

Sun, J. C.

T. P. Yang, H. C. Zhu, J. M. Bian, J. C. Sun, X. Dong, B. L. Zhang, H. W. Liang, X. P. Li, Y. G. Cui, and G. T. Du, “Room temperature electroluminescence from the n-ZnO/p-GaN heterojunction device grown by MOCVD,” Mater. Res. Bull. 43(12), 3614–3620 (2008).
[CrossRef]

Sun, X. Q.

Sung, H. H.

M. S. Wang, Y. J. Zhou, Y. P. Zhang, J. K. Eui, H. H. Sung, and G. S. Seung, “Near-infrared photoluminescence from ZnO,” Appl. Phys. Lett. 100(10), 101906 (2012).
[CrossRef]

Tan, H. R.

J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 96(20), 201102 (2010).
[CrossRef]

Tang, Y.

Tang, Z. K.

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in zinc oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[CrossRef]

Terent’ev, Y. V.

S. V. Ivanov, V. A. Kaygorodov, S. V. Sorokin, B. Y. Meltser, V. A. Solov’ev, Y. V. Terent’ev, O. G. Lyublinskaya, K. D. Moiseev, E. A. Grebenshchikova, M. P. Mikhailova, A. A. Toropov, Y. P. Yakovlev, P. S. Kop’ev, and Z. I. Alferov, “A 2.78-μm laser diode based on hybrid AlGaAsSb/InAs/CdMgSe double heterostructure grown by molecular-beam epitaxy,” Appl. Phys. Lett. 82(21), 3782 (2003).
[CrossRef]

S. V. Ivanov, V. A. Solov’ev, K. D. Moiseev, I. V. Sedova, Y. V. Terent’ev, A. A. Toropov, B. Y. Meltzer, M. P. Mikhailova, Y. P. Yakovlev, and P. S. Kop’ev, “Room-temperature midinfrared electroluminescence from asymmetric AlSbAs/InAs/CdMgSe heterostructures grown by molecular beam epitaxy,” Appl. Phys. Lett. 78(12), 1655 (2001).
[CrossRef]

Toropov, A. A.

S. V. Ivanov, V. A. Kaygorodov, S. V. Sorokin, B. Y. Meltser, V. A. Solov’ev, Y. V. Terent’ev, O. G. Lyublinskaya, K. D. Moiseev, E. A. Grebenshchikova, M. P. Mikhailova, A. A. Toropov, Y. P. Yakovlev, P. S. Kop’ev, and Z. I. Alferov, “A 2.78-μm laser diode based on hybrid AlGaAsSb/InAs/CdMgSe double heterostructure grown by molecular-beam epitaxy,” Appl. Phys. Lett. 82(21), 3782 (2003).
[CrossRef]

S. V. Ivanov, V. A. Solov’ev, K. D. Moiseev, I. V. Sedova, Y. V. Terent’ev, A. A. Toropov, B. Y. Meltzer, M. P. Mikhailova, Y. P. Yakovlev, and P. S. Kop’ev, “Room-temperature midinfrared electroluminescence from asymmetric AlSbAs/InAs/CdMgSe heterostructures grown by molecular beam epitaxy,” Appl. Phys. Lett. 78(12), 1655 (2001).
[CrossRef]

Ul Hasan, K.

N. H. Alvi, K. Ul Hasan, O. Nur, and M. Willander, “The origin of the red emission in n-ZnO nanotubes/p-GaN white light emitting diodes,” Nanoscale Res. Lett. 6(1), 130 (2011).
[CrossRef] [PubMed]

Wang, F. F.

Wang, H.

Z. F. Shi, Y. T. Zhang, X. C. Xia, W. Zhao, H. Wang, L. Zhao, X. Dong, B. L. Zhang, and G. T. Du, “Electrically driven ultraviolet random lasing from an n-MgZnO/i-ZnO/SiO2/p-Si asymmetric double heterojunction,” Nanoscale 5(11), 5080–5085 (2013).
[CrossRef] [PubMed]

Z. F. Shi, Y. T. Zhang, J. X. Zhang, H. Wang, B. Wu, X. P. Cai, X. J. Cui, X. Dong, H. W. Liang, B. L. Zhang, and G. T. Du, “High-performance ultraviolet-blue light-emitting diodes based on an n-ZnO nanowall networks/p-GaN heterojunction,” Appl. Phys. Lett. 103(2), 021109 (2013).
[CrossRef]

Wang, H. N.

H. Long, S. Z. Li, X. M. Mo, H. N. Wang, H. H. Huang, Z. Chen, Y. P. Liu, and G. J. Fang, “Electroluminescence from ZnO-nanorod-based double heterostructured light-emitting diodes,” Appl. Phys. Lett. 103(12), 123504 (2013).
[CrossRef]

S. Z. Li, W. W. Lin, G. J. Fang, F. Huang, H. H. Huang, H. Long, X. M. Mo, H. N. Wang, W. J. Guan, and X. Z. Zhao, “Ultraviolet/violet dual-color electroluminescence based on n-ZnO single crystal/p-GaN direct-contact light-emitting diode,” J. Lumin. 140, 110–113 (2013).
[CrossRef]

H. H. Huang, G. J. Fang, X. M. Mo, H. Long, H. N. Wang, S. Z. Li, Y. Li, Y. P. Zhang, C. X. Pan, and D. L. Carroll, “Improved and orange emission from an n-ZnO/p-Si heterojunction light emitting device with NiO as the intermediate layer,” Appl. Phys. Lett. 101(22), 223504 (2012).
[CrossRef]

H. H. Huang, G. J. Fang, Y. Li, S. Z. Li, X. M. Mo, H. Long, H. N. Wang, D. L. Carroll, and X. Z. Zhao, “Improved and color tunable electroluminescence from n-ZnO/HfO2/p-GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 100(23), 233502 (2012).
[CrossRef]

Wang, J. X.

J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 96(20), 201102 (2010).
[CrossRef]

Wang, M. S.

M. S. Wang, Y. J. Zhou, Y. P. Zhang, J. K. Eui, H. H. Sung, and G. S. Seung, “Near-infrared photoluminescence from ZnO,” Appl. Phys. Lett. 100(10), 101906 (2012).
[CrossRef]

Wang, S. P.

Willander, M.

N. H. Alvi, K. Ul Hasan, O. Nur, and M. Willander, “The origin of the red emission in n-ZnO nanotubes/p-GaN white light emitting diodes,” Nanoscale Res. Lett. 6(1), 130 (2011).
[CrossRef] [PubMed]

Word, R. C.

A. Nadarajah, R. C. Word, J. Meiss, and R. Könenkamp, “Flexible inorganic nanowire light-emitting diode,” Nano Lett. 8(2), 534–537 (2008).
[CrossRef] [PubMed]

Wowchak, A. M.

J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 96(20), 201102 (2010).
[CrossRef]

Wu, B.

Z. F. Shi, Y. T. Zhang, J. X. Zhang, H. Wang, B. Wu, X. P. Cai, X. J. Cui, X. Dong, H. W. Liang, B. L. Zhang, and G. T. Du, “High-performance ultraviolet-blue light-emitting diodes based on an n-ZnO nanowall networks/p-GaN heterojunction,” Appl. Phys. Lett. 103(2), 021109 (2013).
[CrossRef]

Wu, P. C.

P. C. Wu, H. Y. Lee, and C. T. Lee, “Enhanced light emission of double heterostructured MgZnO/ZnO/MgZnO in ultraviolet blind light-emitting diodes deposited by vapor cooling condensation system,” Appl. Phys. Lett. 100(13), 131116 (2012).
[CrossRef]

Wu, Z. L.

Xia, W.

H. Long, G. J. Fang, H. H. Huang, X. M. Mo, W. Xia, B. Z. Dong, X. Q. Meng, and X. Z. Zhao, “Ultraviolet electroluminescence from ZnO/NiO-based heterojunction light-emitting diodes,” Appl. Phys. Lett. 95(1), 013509 (2009).
[CrossRef]

Xia, X. C.

Z. F. Shi, Y. T. Zhang, X. C. Xia, W. Zhao, H. Wang, L. Zhao, X. Dong, B. L. Zhang, and G. T. Du, “Electrically driven ultraviolet random lasing from an n-MgZnO/i-ZnO/SiO2/p-Si asymmetric double heterojunction,” Nanoscale 5(11), 5080–5085 (2013).
[CrossRef] [PubMed]

Xiang, L. L.

Y. Yang, Y. P. Li, L. L. Xiang, X. Y. Ma, and D. R. Yang, “Low-voltage driven ∼1.54 μm electroluminescence from erbium-doped ZnO/p+-Si heterostructured devices: Energy transfer from ZnO host to erbium ions,” Appl. Phys. Lett. 102(18), 181111 (2013).
[CrossRef]

Xu, H. J.

Yakovlev, Y. P.

S. V. Ivanov, V. A. Kaygorodov, S. V. Sorokin, B. Y. Meltser, V. A. Solov’ev, Y. V. Terent’ev, O. G. Lyublinskaya, K. D. Moiseev, E. A. Grebenshchikova, M. P. Mikhailova, A. A. Toropov, Y. P. Yakovlev, P. S. Kop’ev, and Z. I. Alferov, “A 2.78-μm laser diode based on hybrid AlGaAsSb/InAs/CdMgSe double heterostructure grown by molecular-beam epitaxy,” Appl. Phys. Lett. 82(21), 3782 (2003).
[CrossRef]

S. V. Ivanov, V. A. Solov’ev, K. D. Moiseev, I. V. Sedova, Y. V. Terent’ev, A. A. Toropov, B. Y. Meltzer, M. P. Mikhailova, Y. P. Yakovlev, and P. S. Kop’ev, “Room-temperature midinfrared electroluminescence from asymmetric AlSbAs/InAs/CdMgSe heterostructures grown by molecular beam epitaxy,” Appl. Phys. Lett. 78(12), 1655 (2001).
[CrossRef]

Yang, D. R.

Y. Yang, Y. P. Li, L. L. Xiang, X. Y. Ma, and D. R. Yang, “Low-voltage driven ∼1.54 μm electroluminescence from erbium-doped ZnO/p+-Si heterostructured devices: Energy transfer from ZnO host to erbium ions,” Appl. Phys. Lett. 102(18), 181111 (2013).
[CrossRef]

Yang, F. H.

C. P. Chen, M. Y. Ke, C. C. Liu, Y. J. Chang, F. H. Yang, and J. J. Huang, “Observation of 394 nm electroluminescence from low-temperature sputtered n-ZnO∕SiO2 thin films on top of the p-GaN heterostructure,” Appl. Phys. Lett. 91(9), 091107 (2007).
[CrossRef]

Yang, S. C.

Yang, T. P.

T. P. Yang, H. C. Zhu, J. M. Bian, J. C. Sun, X. Dong, B. L. Zhang, H. W. Liang, X. P. Li, Y. G. Cui, and G. T. Du, “Room temperature electroluminescence from the n-ZnO/p-GaN heterojunction device grown by MOCVD,” Mater. Res. Bull. 43(12), 3614–3620 (2008).
[CrossRef]

Yang, Y.

Y. Yang, Y. P. Li, L. L. Xiang, X. Y. Ma, and D. R. Yang, “Low-voltage driven ∼1.54 μm electroluminescence from erbium-doped ZnO/p+-Si heterostructured devices: Energy transfer from ZnO host to erbium ions,” Appl. Phys. Lett. 102(18), 181111 (2013).
[CrossRef]

Yao, B.

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in zinc oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[CrossRef]

Yin, Z. G.

J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 96(20), 201102 (2010).
[CrossRef]

You, J. B.

J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 96(20), 201102 (2010).
[CrossRef]

Zhang, B. L.

Z. F. Shi, Y. T. Zhang, X. C. Xia, W. Zhao, H. Wang, L. Zhao, X. Dong, B. L. Zhang, and G. T. Du, “Electrically driven ultraviolet random lasing from an n-MgZnO/i-ZnO/SiO2/p-Si asymmetric double heterojunction,” Nanoscale 5(11), 5080–5085 (2013).
[CrossRef] [PubMed]

Z. F. Shi, Y. T. Zhang, J. X. Zhang, H. Wang, B. Wu, X. P. Cai, X. J. Cui, X. Dong, H. W. Liang, B. L. Zhang, and G. T. Du, “High-performance ultraviolet-blue light-emitting diodes based on an n-ZnO nanowall networks/p-GaN heterojunction,” Appl. Phys. Lett. 103(2), 021109 (2013).
[CrossRef]

T. P. Yang, H. C. Zhu, J. M. Bian, J. C. Sun, X. Dong, B. L. Zhang, H. W. Liang, X. P. Li, Y. G. Cui, and G. T. Du, “Room temperature electroluminescence from the n-ZnO/p-GaN heterojunction device grown by MOCVD,” Mater. Res. Bull. 43(12), 3614–3620 (2008).
[CrossRef]

Zhang, C. X.

Zhang, J. X.

Z. F. Shi, Y. T. Zhang, J. X. Zhang, H. Wang, B. Wu, X. P. Cai, X. J. Cui, X. Dong, H. W. Liang, B. L. Zhang, and G. T. Du, “High-performance ultraviolet-blue light-emitting diodes based on an n-ZnO nanowall networks/p-GaN heterojunction,” Appl. Phys. Lett. 103(2), 021109 (2013).
[CrossRef]

Zhang, J. Y.

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in zinc oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[CrossRef]

Zhang, L. C.

L. C. Zhang, Q. S. Li, L. Shang, F. F. Wang, C. Qu, and F. Z. Zhao, “Improvement of UV electroluminescence of n-ZnO/p-GaN heterojunction LED by ZnS interlayer,” Opt. Express 21(14), 16578–16583 (2013).
[CrossRef] [PubMed]

L. C. Zhang, Q. S. Li, L. Shang, Z. J. Zhang, R. Z. Huang, and F. Z. Zhao, “Electroluminescence from n-ZnO : Ga/p-GaN heterojunction light-emitting diodes with different interfacial layers,” J. Phys. D Appl. Phys. 45(48), 485103 (2012).
[CrossRef]

Zhang, L. G.

J. S. Liu, C. X. Shan, H. Shen, B. H. Li, Z. Z. Zhang, L. Liu, L. G. Zhang, and D. Z. Shen, “ZnO light-emitting devices with a lifetime of 6.8 hours,” Appl. Phys. Lett. 101(1), 011106 (2012).
[CrossRef]

Zhang, S. G.

J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 96(20), 201102 (2010).
[CrossRef]

Zhang, W. J.

J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 96(20), 201102 (2010).
[CrossRef]

Zhang, X. W.

J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 96(20), 201102 (2010).
[CrossRef]

Zhang, Y. P.

M. S. Wang, Y. J. Zhou, Y. P. Zhang, J. K. Eui, H. H. Sung, and G. S. Seung, “Near-infrared photoluminescence from ZnO,” Appl. Phys. Lett. 100(10), 101906 (2012).
[CrossRef]

H. H. Huang, G. J. Fang, X. M. Mo, H. Long, H. N. Wang, S. Z. Li, Y. Li, Y. P. Zhang, C. X. Pan, and D. L. Carroll, “Improved and orange emission from an n-ZnO/p-Si heterojunction light emitting device with NiO as the intermediate layer,” Appl. Phys. Lett. 101(22), 223504 (2012).
[CrossRef]

Zhang, Y. T.

Z. F. Shi, Y. T. Zhang, X. C. Xia, W. Zhao, H. Wang, L. Zhao, X. Dong, B. L. Zhang, and G. T. Du, “Electrically driven ultraviolet random lasing from an n-MgZnO/i-ZnO/SiO2/p-Si asymmetric double heterojunction,” Nanoscale 5(11), 5080–5085 (2013).
[CrossRef] [PubMed]

Z. F. Shi, Y. T. Zhang, J. X. Zhang, H. Wang, B. Wu, X. P. Cai, X. J. Cui, X. Dong, H. W. Liang, B. L. Zhang, and G. T. Du, “High-performance ultraviolet-blue light-emitting diodes based on an n-ZnO nanowall networks/p-GaN heterojunction,” Appl. Phys. Lett. 103(2), 021109 (2013).
[CrossRef]

Zhang, Z. J.

L. C. Zhang, Q. S. Li, L. Shang, Z. J. Zhang, R. Z. Huang, and F. Z. Zhao, “Electroluminescence from n-ZnO : Ga/p-GaN heterojunction light-emitting diodes with different interfacial layers,” J. Phys. D Appl. Phys. 45(48), 485103 (2012).
[CrossRef]

Zhang, Z. Z.

J. S. Liu, C. X. Shan, H. Shen, B. H. Li, Z. Z. Zhang, L. Liu, L. G. Zhang, and D. Z. Shen, “ZnO light-emitting devices with a lifetime of 6.8 hours,” Appl. Phys. Lett. 101(1), 011106 (2012).
[CrossRef]

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in zinc oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[CrossRef]

Zhao, D. X.

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in zinc oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[CrossRef]

Zhao, F. Z.

L. C. Zhang, Q. S. Li, L. Shang, F. F. Wang, C. Qu, and F. Z. Zhao, “Improvement of UV electroluminescence of n-ZnO/p-GaN heterojunction LED by ZnS interlayer,” Opt. Express 21(14), 16578–16583 (2013).
[CrossRef] [PubMed]

L. C. Zhang, Q. S. Li, L. Shang, Z. J. Zhang, R. Z. Huang, and F. Z. Zhao, “Electroluminescence from n-ZnO : Ga/p-GaN heterojunction light-emitting diodes with different interfacial layers,” J. Phys. D Appl. Phys. 45(48), 485103 (2012).
[CrossRef]

Zhao, H. F.

Zhao, J. Z.

S. Chu, J. Z. Zhao, Z. Zuo, J. Y. Kong, L. Li, and J. L. Liu, “Enhanced output power using MgZnO/ZnO/MgZnO double heterostructure in ZnO homojunction light emitting diode,” J. Appl. Phys. 109(12), 123110 (2011).
[CrossRef]

Zhao, L.

Z. F. Shi, Y. T. Zhang, X. C. Xia, W. Zhao, H. Wang, L. Zhao, X. Dong, B. L. Zhang, and G. T. Du, “Electrically driven ultraviolet random lasing from an n-MgZnO/i-ZnO/SiO2/p-Si asymmetric double heterojunction,” Nanoscale 5(11), 5080–5085 (2013).
[CrossRef] [PubMed]

Zhao, W.

Z. F. Shi, Y. T. Zhang, X. C. Xia, W. Zhao, H. Wang, L. Zhao, X. Dong, B. L. Zhang, and G. T. Du, “Electrically driven ultraviolet random lasing from an n-MgZnO/i-ZnO/SiO2/p-Si asymmetric double heterojunction,” Nanoscale 5(11), 5080–5085 (2013).
[CrossRef] [PubMed]

Zhao, X. Z.

S. Z. Li, W. W. Lin, G. J. Fang, F. Huang, H. H. Huang, H. Long, X. M. Mo, H. N. Wang, W. J. Guan, and X. Z. Zhao, “Ultraviolet/violet dual-color electroluminescence based on n-ZnO single crystal/p-GaN direct-contact light-emitting diode,” J. Lumin. 140, 110–113 (2013).
[CrossRef]

H. H. Huang, G. J. Fang, Y. Li, S. Z. Li, X. M. Mo, H. Long, H. N. Wang, D. L. Carroll, and X. Z. Zhao, “Improved and color tunable electroluminescence from n-ZnO/HfO2/p-GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 100(23), 233502 (2012).
[CrossRef]

S. Z. Li, G. J. Fang, H. Long, X. M. Mo, H. H. Huang, B. Z. Dong, and X. Z. Zhao, “Enhancement of ultraviolet electroluminescence based on n-ZnO/n-GaN isotype heterojunction with low threshold voltage,” Appl. Phys. Lett. 96(20), 201111 (2010).
[CrossRef]

H. Long, G. J. Fang, H. H. Huang, X. M. Mo, W. Xia, B. Z. Dong, X. Q. Meng, and X. Z. Zhao, “Ultraviolet electroluminescence from ZnO/NiO-based heterojunction light-emitting diodes,” Appl. Phys. Lett. 95(1), 013509 (2009).
[CrossRef]

Zhou, Y. J.

M. S. Wang, Y. J. Zhou, Y. P. Zhang, J. K. Eui, H. H. Sung, and G. S. Seung, “Near-infrared photoluminescence from ZnO,” Appl. Phys. Lett. 100(10), 101906 (2012).
[CrossRef]

Zhu, H.

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in zinc oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[CrossRef]

Zhu, H. C.

T. P. Yang, H. C. Zhu, J. M. Bian, J. C. Sun, X. Dong, B. L. Zhang, H. W. Liang, X. P. Li, Y. G. Cui, and G. T. Du, “Room temperature electroluminescence from the n-ZnO/p-GaN heterojunction device grown by MOCVD,” Mater. Res. Bull. 43(12), 3614–3620 (2008).
[CrossRef]

Zuo, Z.

S. Chu, J. Z. Zhao, Z. Zuo, J. Y. Kong, L. Li, and J. L. Liu, “Enhanced output power using MgZnO/ZnO/MgZnO double heterostructure in ZnO homojunction light emitting diode,” J. Appl. Phys. 109(12), 123110 (2011).
[CrossRef]

Adv. Mater. (1)

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in zinc oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[CrossRef]

Appl. Phys. Lett. (17)

H. H. Huang, G. J. Fang, Y. Li, S. Z. Li, X. M. Mo, H. Long, H. N. Wang, D. L. Carroll, and X. Z. Zhao, “Improved and color tunable electroluminescence from n-ZnO/HfO2/p-GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 100(23), 233502 (2012).
[CrossRef]

C. P. Chen, M. Y. Ke, C. C. Liu, Y. J. Chang, F. H. Yang, and J. J. Huang, “Observation of 394 nm electroluminescence from low-temperature sputtered n-ZnO∕SiO2 thin films on top of the p-GaN heterostructure,” Appl. Phys. Lett. 91(9), 091107 (2007).
[CrossRef]

Z. F. Shi, Y. T. Zhang, J. X. Zhang, H. Wang, B. Wu, X. P. Cai, X. J. Cui, X. Dong, H. W. Liang, B. L. Zhang, and G. T. Du, “High-performance ultraviolet-blue light-emitting diodes based on an n-ZnO nanowall networks/p-GaN heterojunction,” Appl. Phys. Lett. 103(2), 021109 (2013).
[CrossRef]

J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 96(20), 201102 (2010).
[CrossRef]

Y. I. Alivov, E. V. Kalinina, A. E. Cherenkov, D. C. Look, B. M. Ataev, A. K. Omaev, M. V. Chukichev, and D. M. Bagnall, “Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates,” Appl. Phys. Lett. 83(23), 4719–4721 (2003).
[CrossRef]

H. Long, G. J. Fang, H. H. Huang, X. M. Mo, W. Xia, B. Z. Dong, X. Q. Meng, and X. Z. Zhao, “Ultraviolet electroluminescence from ZnO/NiO-based heterojunction light-emitting diodes,” Appl. Phys. Lett. 95(1), 013509 (2009).
[CrossRef]

H. H. Huang, G. J. Fang, X. M. Mo, H. Long, H. N. Wang, S. Z. Li, Y. Li, Y. P. Zhang, C. X. Pan, and D. L. Carroll, “Improved and orange emission from an n-ZnO/p-Si heterojunction light emitting device with NiO as the intermediate layer,” Appl. Phys. Lett. 101(22), 223504 (2012).
[CrossRef]

Y. Yang, Y. P. Li, L. L. Xiang, X. Y. Ma, and D. R. Yang, “Low-voltage driven ∼1.54 μm electroluminescence from erbium-doped ZnO/p+-Si heterostructured devices: Energy transfer from ZnO host to erbium ions,” Appl. Phys. Lett. 102(18), 181111 (2013).
[CrossRef]

H. Ohta, K.-i. Kawamura, M. Orita, M. Hirano, N. Sarukura, and H. Hosono, “Current injection emission from a transparent p–n junction composed of p-SrCu2O2/n-ZnO,” Appl. Phys. Lett. 77(4), 475–477 (2000).
[CrossRef]

S. F. Chichibu, T. Ohmori, N. Shibata, T. Koyama, and T. Onuma, “Greenish-white electroluminescence from p-type CuGaS2 heterojunction diodes using n-type ZnO as an electron injector,” Appl. Phys. Lett. 85(19), 4403–4405 (2004).
[CrossRef]

S. Z. Li, G. J. Fang, H. Long, X. M. Mo, H. H. Huang, B. Z. Dong, and X. Z. Zhao, “Enhancement of ultraviolet electroluminescence based on n-ZnO/n-GaN isotype heterojunction with low threshold voltage,” Appl. Phys. Lett. 96(20), 201111 (2010).
[CrossRef]

P. C. Wu, H. Y. Lee, and C. T. Lee, “Enhanced light emission of double heterostructured MgZnO/ZnO/MgZnO in ultraviolet blind light-emitting diodes deposited by vapor cooling condensation system,” Appl. Phys. Lett. 100(13), 131116 (2012).
[CrossRef]

H. Long, S. Z. Li, X. M. Mo, H. N. Wang, H. H. Huang, Z. Chen, Y. P. Liu, and G. J. Fang, “Electroluminescence from ZnO-nanorod-based double heterostructured light-emitting diodes,” Appl. Phys. Lett. 103(12), 123504 (2013).
[CrossRef]

S. V. Ivanov, V. A. Solov’ev, K. D. Moiseev, I. V. Sedova, Y. V. Terent’ev, A. A. Toropov, B. Y. Meltzer, M. P. Mikhailova, Y. P. Yakovlev, and P. S. Kop’ev, “Room-temperature midinfrared electroluminescence from asymmetric AlSbAs/InAs/CdMgSe heterostructures grown by molecular beam epitaxy,” Appl. Phys. Lett. 78(12), 1655 (2001).
[CrossRef]

S. V. Ivanov, V. A. Kaygorodov, S. V. Sorokin, B. Y. Meltser, V. A. Solov’ev, Y. V. Terent’ev, O. G. Lyublinskaya, K. D. Moiseev, E. A. Grebenshchikova, M. P. Mikhailova, A. A. Toropov, Y. P. Yakovlev, P. S. Kop’ev, and Z. I. Alferov, “A 2.78-μm laser diode based on hybrid AlGaAsSb/InAs/CdMgSe double heterostructure grown by molecular-beam epitaxy,” Appl. Phys. Lett. 82(21), 3782 (2003).
[CrossRef]

M. S. Wang, Y. J. Zhou, Y. P. Zhang, J. K. Eui, H. H. Sung, and G. S. Seung, “Near-infrared photoluminescence from ZnO,” Appl. Phys. Lett. 100(10), 101906 (2012).
[CrossRef]

J. S. Liu, C. X. Shan, H. Shen, B. H. Li, Z. Z. Zhang, L. Liu, L. G. Zhang, and D. Z. Shen, “ZnO light-emitting devices with a lifetime of 6.8 hours,” Appl. Phys. Lett. 101(1), 011106 (2012).
[CrossRef]

IEEE Trans. Electron. Dev. (1)

Y. S. Choi, J. W. Kang, D. K. Hwang, and S. J. Park, “Recent advances in ZnO-based light-emitting diodes,” IEEE Trans. Electron. Dev. 57(1), 26–41 (2010).
[CrossRef]

J. Appl. Phys. (2)

C. H. Ahn, Y. Y. Kim, D. C. Kim, S. K. Mohanta, and H. K. Cho, “A comparative analysis of deep level emission in ZnO layers deposited by various methods,” J. Appl. Phys. 105(1), 013502 (2009).
[CrossRef]

S. Chu, J. Z. Zhao, Z. Zuo, J. Y. Kong, L. Li, and J. L. Liu, “Enhanced output power using MgZnO/ZnO/MgZnO double heterostructure in ZnO homojunction light emitting diode,” J. Appl. Phys. 109(12), 123110 (2011).
[CrossRef]

J. Lumin. (1)

S. Z. Li, W. W. Lin, G. J. Fang, F. Huang, H. H. Huang, H. Long, X. M. Mo, H. N. Wang, W. J. Guan, and X. Z. Zhao, “Ultraviolet/violet dual-color electroluminescence based on n-ZnO single crystal/p-GaN direct-contact light-emitting diode,” J. Lumin. 140, 110–113 (2013).
[CrossRef]

J. Phys. D Appl. Phys. (1)

L. C. Zhang, Q. S. Li, L. Shang, Z. J. Zhang, R. Z. Huang, and F. Z. Zhao, “Electroluminescence from n-ZnO : Ga/p-GaN heterojunction light-emitting diodes with different interfacial layers,” J. Phys. D Appl. Phys. 45(48), 485103 (2012).
[CrossRef]

J. Vac. Sci. Technol. B (1)

S. Miyazaki, “Photoemission study of energy-band alignments and gap-state density distributions for high-k gate dielectrics,” J. Vac. Sci. Technol. B 19(6), 2212 (2001).
[CrossRef]

Jpn. J. Appl. Phys. (1)

T. Ogino and M. Aoki, “Mechanism of yellow luminescence in GaN,” Jpn. J. Appl. Phys. 19(12), 2395–2405 (1980).
[CrossRef]

Mater. Res. Bull. (1)

T. P. Yang, H. C. Zhu, J. M. Bian, J. C. Sun, X. Dong, B. L. Zhang, H. W. Liang, X. P. Li, Y. G. Cui, and G. T. Du, “Room temperature electroluminescence from the n-ZnO/p-GaN heterojunction device grown by MOCVD,” Mater. Res. Bull. 43(12), 3614–3620 (2008).
[CrossRef]

Nano Lett. (1)

A. Nadarajah, R. C. Word, J. Meiss, and R. Könenkamp, “Flexible inorganic nanowire light-emitting diode,” Nano Lett. 8(2), 534–537 (2008).
[CrossRef] [PubMed]

Nanoscale (1)

Z. F. Shi, Y. T. Zhang, X. C. Xia, W. Zhao, H. Wang, L. Zhao, X. Dong, B. L. Zhang, and G. T. Du, “Electrically driven ultraviolet random lasing from an n-MgZnO/i-ZnO/SiO2/p-Si asymmetric double heterojunction,” Nanoscale 5(11), 5080–5085 (2013).
[CrossRef] [PubMed]

Nanoscale Res. Lett. (1)

N. H. Alvi, K. Ul Hasan, O. Nur, and M. Willander, “The origin of the red emission in n-ZnO nanotubes/p-GaN white light emitting diodes,” Nanoscale Res. Lett. 6(1), 130 (2011).
[CrossRef] [PubMed]

Nat. Photonics (1)

S. Pimputkar, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Prospects for LED lighting,” Nat. Photonics 3(4), 180–182 (2009).
[CrossRef]

Opt. Express (4)

Opt. Lett. (1)

Other (2)

Z. C. Feng, Handbook of Zinc Oxide and Related Materials (Taylor & Francis, 2012).

Z. C. Feng, III-Nitride Devices and Nanoengineering (Imperial College, 2008).

Cited By

OSA participates in CrossRef's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (6)

Fig. 1
Fig. 1

The I-V characteristic of the LEDs in dark at RT. The insets show the schematic diagram of LED 3 with structure of n-ZnO/Ta2O5/i-ZnO/HfO2/p-GaN and the I-V curves of the In/p-GaN and the Ag/n-ZnO contacts, respectively.

Fig. 2
Fig. 2

The left column shows the EL spectra of the LEDs under different injection currents. The right column shows the Gaussian fits of the EL spectra of LEDs under the same injection current of 2.00 mA.

Fig. 3
Fig. 3

RT PL spectra of p-GaN and Ta2O5/i-ZnO/HfO2/p-GaN. Peak-deconvolution with Gaussian function is applied in the PL spectra. The inset shows RT transmission spectrum of p-GaN.

Fig. 4
Fig. 4

(a) The plots of EL integrated intensity versus injection current of LEDs. (b) EL intensity of respective peaks versus various LEDs under the same injection current of 2.00 mA.

Fig. 5
Fig. 5

The energy band structures for (a) LED 1, (b) LED 2 and (c) LED 3.

Fig. 6
Fig. 6

(a) The emission intensity of the band at 633 nm of LED 3 as a function of the 24-hour driving time recorded every 120 second intermittently with a continuous injection current of 2.00 mA. The inset shows the result of long-time stability test recorded every 10 hour intermittently also with a continuous injection current of 2.00 mA. (b) The EL spectra of LED 3 before and after running 24 hours, and after stopping continuous work 2 hours.

Tables (1)

Tables Icon

Table 1 ΔEC of ZnO/EBLs and ΔEV of EBLs/GaN of various materials

Metrics