Abstract

This study proposes a novel packaging structure for vertical thin-GaN LED applications by integration of LED chip and silicon-based packaging process. The vertical thin film LED is directly mounted on package submount. The shortest thermal path structure from junction to package submount achieves the lowest thermal resistance of 1.65 K/W for LED package. Experimental results indicate that low thermal resistance significant improved forward current up to 4.6A with 1.125 × 1.125 mm2 LED chip size.

© 2014 Optical Society of America

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Corrections

Shih-Yi Wen, Hung-Lieh Hu, Yao-Jun Tsai, Chen-Peng Hsu, Re-Ching Lin, and Ray Hua Horng, "A novel integrated structure of thin film GaN LED with ultra-low thermal resistance: erratum," Opt. Express 22, A960-A960 (2014)
https://www.osapublishing.org/oe/abstract.cfm?uri=oe-22-S3-A960

References

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  1. K. Nakahara, K. Tamura, M. Sakai, D. Nakagawa, N. Ito, M. Sonobe, H. Takasu, H. Tampo, P. Fons, K. Matsubara, K. Iwata, A. Yamada, and S. Niki, “Improved external efficiency InGaN-based light-emitting diodes with transparent conductive Ga-doped ZnO as p-electrodes,” Jpn. J. Appl. Phys. 43(2A), L180–L182 (2004).
    [CrossRef]
  2. R. H. Horng, H. L. Hu, M. T. Chu, Y. L. Tsai, Y. J. Tsai, C. P. Hsu, and D. S. Wuu, “Performance of flip-chip thin-film GaN light-emitting diodes with and without patterned sapphires,” IEEE Photonics Technol. Lett. 22(8), 550–552 (2010).
    [CrossRef]
  3. X. Guo and E. F. Schubert, “Current crowding in GaNÕInGaN light emitting diodes on insulating substrates,” J. Appl. Phys. 90(8), 4191–4195 (2001).
    [CrossRef]
  4. O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN-GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 011091 (2006).
    [CrossRef]
  5. R. H. Horng, H. L. Hu, R. C. Lin, K. C. Peng, and Y. C. Chiang, “Thermal behavior of sapphire-based InGaN light-emitting diodes with cap-shaped copper–diamond substrates,” Electrochem. Solid-State Lett. 14(5), H215–H217 (2011).
    [CrossRef]
  6. L. Yang, J. Hu, L. Kim, and M. W. Shin, “Thermal analysis of GaN-based light emitting diodes with different chip sizes,” IEEE Trans. Device Mater. Reliab. 8(3), 571–575 (2008).
    [CrossRef]
  7. J. K. Ho, S. U. Cho, E. S. Kim, C. S. Kim, and M. Y. Jeong, “Improving light-emitting diode performance through sapphire substrate double-side patterning,” Opt. Eng. 52(2), 30021–30027 (2013).
  8. R. H. Horng, H. L. Hu, R. C. Lin, L. S. Tang, C. P. Hsu, and S. L. Ou, “Cup-shaped copper heat spreader in multi-chip high-power LEDs application,” Opt. Express 20(S5), A597–A605 (2012).
    [CrossRef] [PubMed]
  9. J. S. Yun, S. M. Hwang, and J. I. Shim, “Current spreading analysis in vertical electrode GaN-based blue LEDs,” Proc. Int. Soc. Opt. Photonics. 6841, 0L1–0L8 (2007).
  10. J. S. Ha, S. W. Lee, H. J. Lee, H. J. Lee, S. H. Lee, H. Goto, T. Kato, K. Fujii, M. W. Cho, and T. Yao, “The fabrication of vertical light-emitting diodes using chemical lift-off process,” IEEE Photonics Technol. Lett. 20(3), 175–177 (2008).
    [CrossRef]
  11. J. H. Son, B. J. Kim, C. J. Ryu, Y. H. Song, H. K. Lee, J. W. Choi, and J. L. Lee, “Enhancement of wall-plug efficiency in vertical InGaN/GaN LEDs by improved current spreading,” Opt. Express 20(S2), A287–A292 (2012).
    [CrossRef] [PubMed]
  12. Y. J. Tsai, R. C. Lin, H. L. Hu, C. P. Hsu, S. Y. Wen, and C. C. Yang, “Novel electrode design for integrated thin-film GaN LED package with efficiency improvement,” IEEE Photonics Technol. Lett. 25(6), 609–611 (2013).
    [CrossRef]
  13. P. Y. Tsai, H. K. Huang, C. M. Sung, M. C. Kan, and Y. H. Wang, “InGaN/GaN vertical light-emitting diodes with diamondlike carbon/titanium heat-spreading layers,” IEEE Electron Device Lett. 34(8), 1029–1031 (2013).
    [CrossRef]
  14. S. Kim, “Vertical structure GaN-based light emitting diodes with electrochemically deposited stress-free Nickel substrate,” J. Electrochem. Soc. 159(4), D196–D199 (2012).
    [CrossRef]
  15. T. Jeong, K. H. Kim, S. J. Lee, S. H. Lee, S. R. Jeon, S. H. Lim, J. H. Baek, and J. K. Lee, “Aluminum nitride ceramic substrates-bonded vertical light-emitting diodes,” IEEE Photonics Technol. Lett. 21(13), 890–892 (2009).
    [CrossRef]
  16. C. J. M. Lasance and A. Poppe, Thermal Management for LED Applications (Solid State Lighting Technology and Application Series) (Springer, 2014).

2013 (3)

J. K. Ho, S. U. Cho, E. S. Kim, C. S. Kim, and M. Y. Jeong, “Improving light-emitting diode performance through sapphire substrate double-side patterning,” Opt. Eng. 52(2), 30021–30027 (2013).

Y. J. Tsai, R. C. Lin, H. L. Hu, C. P. Hsu, S. Y. Wen, and C. C. Yang, “Novel electrode design for integrated thin-film GaN LED package with efficiency improvement,” IEEE Photonics Technol. Lett. 25(6), 609–611 (2013).
[CrossRef]

P. Y. Tsai, H. K. Huang, C. M. Sung, M. C. Kan, and Y. H. Wang, “InGaN/GaN vertical light-emitting diodes with diamondlike carbon/titanium heat-spreading layers,” IEEE Electron Device Lett. 34(8), 1029–1031 (2013).
[CrossRef]

2012 (3)

2011 (1)

R. H. Horng, H. L. Hu, R. C. Lin, K. C. Peng, and Y. C. Chiang, “Thermal behavior of sapphire-based InGaN light-emitting diodes with cap-shaped copper–diamond substrates,” Electrochem. Solid-State Lett. 14(5), H215–H217 (2011).
[CrossRef]

2010 (1)

R. H. Horng, H. L. Hu, M. T. Chu, Y. L. Tsai, Y. J. Tsai, C. P. Hsu, and D. S. Wuu, “Performance of flip-chip thin-film GaN light-emitting diodes with and without patterned sapphires,” IEEE Photonics Technol. Lett. 22(8), 550–552 (2010).
[CrossRef]

2009 (1)

T. Jeong, K. H. Kim, S. J. Lee, S. H. Lee, S. R. Jeon, S. H. Lim, J. H. Baek, and J. K. Lee, “Aluminum nitride ceramic substrates-bonded vertical light-emitting diodes,” IEEE Photonics Technol. Lett. 21(13), 890–892 (2009).
[CrossRef]

2008 (2)

L. Yang, J. Hu, L. Kim, and M. W. Shin, “Thermal analysis of GaN-based light emitting diodes with different chip sizes,” IEEE Trans. Device Mater. Reliab. 8(3), 571–575 (2008).
[CrossRef]

J. S. Ha, S. W. Lee, H. J. Lee, H. J. Lee, S. H. Lee, H. Goto, T. Kato, K. Fujii, M. W. Cho, and T. Yao, “The fabrication of vertical light-emitting diodes using chemical lift-off process,” IEEE Photonics Technol. Lett. 20(3), 175–177 (2008).
[CrossRef]

2007 (1)

J. S. Yun, S. M. Hwang, and J. I. Shim, “Current spreading analysis in vertical electrode GaN-based blue LEDs,” Proc. Int. Soc. Opt. Photonics. 6841, 0L1–0L8 (2007).

2006 (1)

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN-GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 011091 (2006).
[CrossRef]

2004 (1)

K. Nakahara, K. Tamura, M. Sakai, D. Nakagawa, N. Ito, M. Sonobe, H. Takasu, H. Tampo, P. Fons, K. Matsubara, K. Iwata, A. Yamada, and S. Niki, “Improved external efficiency InGaN-based light-emitting diodes with transparent conductive Ga-doped ZnO as p-electrodes,” Jpn. J. Appl. Phys. 43(2A), L180–L182 (2004).
[CrossRef]

2001 (1)

X. Guo and E. F. Schubert, “Current crowding in GaNÕInGaN light emitting diodes on insulating substrates,” J. Appl. Phys. 90(8), 4191–4195 (2001).
[CrossRef]

Baek, J. H.

T. Jeong, K. H. Kim, S. J. Lee, S. H. Lee, S. R. Jeon, S. H. Lim, J. H. Baek, and J. K. Lee, “Aluminum nitride ceramic substrates-bonded vertical light-emitting diodes,” IEEE Photonics Technol. Lett. 21(13), 890–892 (2009).
[CrossRef]

Chiang, Y. C.

R. H. Horng, H. L. Hu, R. C. Lin, K. C. Peng, and Y. C. Chiang, “Thermal behavior of sapphire-based InGaN light-emitting diodes with cap-shaped copper–diamond substrates,” Electrochem. Solid-State Lett. 14(5), H215–H217 (2011).
[CrossRef]

Cho, M. W.

J. S. Ha, S. W. Lee, H. J. Lee, H. J. Lee, S. H. Lee, H. Goto, T. Kato, K. Fujii, M. W. Cho, and T. Yao, “The fabrication of vertical light-emitting diodes using chemical lift-off process,” IEEE Photonics Technol. Lett. 20(3), 175–177 (2008).
[CrossRef]

Cho, S. U.

J. K. Ho, S. U. Cho, E. S. Kim, C. S. Kim, and M. Y. Jeong, “Improving light-emitting diode performance through sapphire substrate double-side patterning,” Opt. Eng. 52(2), 30021–30027 (2013).

Choi, J. W.

Chu, M. T.

R. H. Horng, H. L. Hu, M. T. Chu, Y. L. Tsai, Y. J. Tsai, C. P. Hsu, and D. S. Wuu, “Performance of flip-chip thin-film GaN light-emitting diodes with and without patterned sapphires,” IEEE Photonics Technol. Lett. 22(8), 550–552 (2010).
[CrossRef]

Epler, J. E.

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN-GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 011091 (2006).
[CrossRef]

Fons, P.

K. Nakahara, K. Tamura, M. Sakai, D. Nakagawa, N. Ito, M. Sonobe, H. Takasu, H. Tampo, P. Fons, K. Matsubara, K. Iwata, A. Yamada, and S. Niki, “Improved external efficiency InGaN-based light-emitting diodes with transparent conductive Ga-doped ZnO as p-electrodes,” Jpn. J. Appl. Phys. 43(2A), L180–L182 (2004).
[CrossRef]

Fujii, K.

J. S. Ha, S. W. Lee, H. J. Lee, H. J. Lee, S. H. Lee, H. Goto, T. Kato, K. Fujii, M. W. Cho, and T. Yao, “The fabrication of vertical light-emitting diodes using chemical lift-off process,” IEEE Photonics Technol. Lett. 20(3), 175–177 (2008).
[CrossRef]

Goto, H.

J. S. Ha, S. W. Lee, H. J. Lee, H. J. Lee, S. H. Lee, H. Goto, T. Kato, K. Fujii, M. W. Cho, and T. Yao, “The fabrication of vertical light-emitting diodes using chemical lift-off process,” IEEE Photonics Technol. Lett. 20(3), 175–177 (2008).
[CrossRef]

Guo, X.

X. Guo and E. F. Schubert, “Current crowding in GaNÕInGaN light emitting diodes on insulating substrates,” J. Appl. Phys. 90(8), 4191–4195 (2001).
[CrossRef]

Ha, J. S.

J. S. Ha, S. W. Lee, H. J. Lee, H. J. Lee, S. H. Lee, H. Goto, T. Kato, K. Fujii, M. W. Cho, and T. Yao, “The fabrication of vertical light-emitting diodes using chemical lift-off process,” IEEE Photonics Technol. Lett. 20(3), 175–177 (2008).
[CrossRef]

Ho, J. K.

J. K. Ho, S. U. Cho, E. S. Kim, C. S. Kim, and M. Y. Jeong, “Improving light-emitting diode performance through sapphire substrate double-side patterning,” Opt. Eng. 52(2), 30021–30027 (2013).

Holcomb, M. O.

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN-GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 011091 (2006).
[CrossRef]

Horng, R. H.

R. H. Horng, H. L. Hu, R. C. Lin, L. S. Tang, C. P. Hsu, and S. L. Ou, “Cup-shaped copper heat spreader in multi-chip high-power LEDs application,” Opt. Express 20(S5), A597–A605 (2012).
[CrossRef] [PubMed]

R. H. Horng, H. L. Hu, R. C. Lin, K. C. Peng, and Y. C. Chiang, “Thermal behavior of sapphire-based InGaN light-emitting diodes with cap-shaped copper–diamond substrates,” Electrochem. Solid-State Lett. 14(5), H215–H217 (2011).
[CrossRef]

R. H. Horng, H. L. Hu, M. T. Chu, Y. L. Tsai, Y. J. Tsai, C. P. Hsu, and D. S. Wuu, “Performance of flip-chip thin-film GaN light-emitting diodes with and without patterned sapphires,” IEEE Photonics Technol. Lett. 22(8), 550–552 (2010).
[CrossRef]

Hsu, C. P.

Y. J. Tsai, R. C. Lin, H. L. Hu, C. P. Hsu, S. Y. Wen, and C. C. Yang, “Novel electrode design for integrated thin-film GaN LED package with efficiency improvement,” IEEE Photonics Technol. Lett. 25(6), 609–611 (2013).
[CrossRef]

R. H. Horng, H. L. Hu, R. C. Lin, L. S. Tang, C. P. Hsu, and S. L. Ou, “Cup-shaped copper heat spreader in multi-chip high-power LEDs application,” Opt. Express 20(S5), A597–A605 (2012).
[CrossRef] [PubMed]

R. H. Horng, H. L. Hu, M. T. Chu, Y. L. Tsai, Y. J. Tsai, C. P. Hsu, and D. S. Wuu, “Performance of flip-chip thin-film GaN light-emitting diodes with and without patterned sapphires,” IEEE Photonics Technol. Lett. 22(8), 550–552 (2010).
[CrossRef]

Hu, H. L.

Y. J. Tsai, R. C. Lin, H. L. Hu, C. P. Hsu, S. Y. Wen, and C. C. Yang, “Novel electrode design for integrated thin-film GaN LED package with efficiency improvement,” IEEE Photonics Technol. Lett. 25(6), 609–611 (2013).
[CrossRef]

R. H. Horng, H. L. Hu, R. C. Lin, L. S. Tang, C. P. Hsu, and S. L. Ou, “Cup-shaped copper heat spreader in multi-chip high-power LEDs application,” Opt. Express 20(S5), A597–A605 (2012).
[CrossRef] [PubMed]

R. H. Horng, H. L. Hu, R. C. Lin, K. C. Peng, and Y. C. Chiang, “Thermal behavior of sapphire-based InGaN light-emitting diodes with cap-shaped copper–diamond substrates,” Electrochem. Solid-State Lett. 14(5), H215–H217 (2011).
[CrossRef]

R. H. Horng, H. L. Hu, M. T. Chu, Y. L. Tsai, Y. J. Tsai, C. P. Hsu, and D. S. Wuu, “Performance of flip-chip thin-film GaN light-emitting diodes with and without patterned sapphires,” IEEE Photonics Technol. Lett. 22(8), 550–552 (2010).
[CrossRef]

Hu, J.

L. Yang, J. Hu, L. Kim, and M. W. Shin, “Thermal analysis of GaN-based light emitting diodes with different chip sizes,” IEEE Trans. Device Mater. Reliab. 8(3), 571–575 (2008).
[CrossRef]

Huang, H. K.

P. Y. Tsai, H. K. Huang, C. M. Sung, M. C. Kan, and Y. H. Wang, “InGaN/GaN vertical light-emitting diodes with diamondlike carbon/titanium heat-spreading layers,” IEEE Electron Device Lett. 34(8), 1029–1031 (2013).
[CrossRef]

Hwang, S. M.

J. S. Yun, S. M. Hwang, and J. I. Shim, “Current spreading analysis in vertical electrode GaN-based blue LEDs,” Proc. Int. Soc. Opt. Photonics. 6841, 0L1–0L8 (2007).

Ito, N.

K. Nakahara, K. Tamura, M. Sakai, D. Nakagawa, N. Ito, M. Sonobe, H. Takasu, H. Tampo, P. Fons, K. Matsubara, K. Iwata, A. Yamada, and S. Niki, “Improved external efficiency InGaN-based light-emitting diodes with transparent conductive Ga-doped ZnO as p-electrodes,” Jpn. J. Appl. Phys. 43(2A), L180–L182 (2004).
[CrossRef]

Iwata, K.

K. Nakahara, K. Tamura, M. Sakai, D. Nakagawa, N. Ito, M. Sonobe, H. Takasu, H. Tampo, P. Fons, K. Matsubara, K. Iwata, A. Yamada, and S. Niki, “Improved external efficiency InGaN-based light-emitting diodes with transparent conductive Ga-doped ZnO as p-electrodes,” Jpn. J. Appl. Phys. 43(2A), L180–L182 (2004).
[CrossRef]

Jeon, S. R.

T. Jeong, K. H. Kim, S. J. Lee, S. H. Lee, S. R. Jeon, S. H. Lim, J. H. Baek, and J. K. Lee, “Aluminum nitride ceramic substrates-bonded vertical light-emitting diodes,” IEEE Photonics Technol. Lett. 21(13), 890–892 (2009).
[CrossRef]

Jeong, M. Y.

J. K. Ho, S. U. Cho, E. S. Kim, C. S. Kim, and M. Y. Jeong, “Improving light-emitting diode performance through sapphire substrate double-side patterning,” Opt. Eng. 52(2), 30021–30027 (2013).

Jeong, T.

T. Jeong, K. H. Kim, S. J. Lee, S. H. Lee, S. R. Jeon, S. H. Lim, J. H. Baek, and J. K. Lee, “Aluminum nitride ceramic substrates-bonded vertical light-emitting diodes,” IEEE Photonics Technol. Lett. 21(13), 890–892 (2009).
[CrossRef]

Kan, M. C.

P. Y. Tsai, H. K. Huang, C. M. Sung, M. C. Kan, and Y. H. Wang, “InGaN/GaN vertical light-emitting diodes with diamondlike carbon/titanium heat-spreading layers,” IEEE Electron Device Lett. 34(8), 1029–1031 (2013).
[CrossRef]

Kato, T.

J. S. Ha, S. W. Lee, H. J. Lee, H. J. Lee, S. H. Lee, H. Goto, T. Kato, K. Fujii, M. W. Cho, and T. Yao, “The fabrication of vertical light-emitting diodes using chemical lift-off process,” IEEE Photonics Technol. Lett. 20(3), 175–177 (2008).
[CrossRef]

Kim, B. J.

Kim, C. S.

J. K. Ho, S. U. Cho, E. S. Kim, C. S. Kim, and M. Y. Jeong, “Improving light-emitting diode performance through sapphire substrate double-side patterning,” Opt. Eng. 52(2), 30021–30027 (2013).

Kim, E. S.

J. K. Ho, S. U. Cho, E. S. Kim, C. S. Kim, and M. Y. Jeong, “Improving light-emitting diode performance through sapphire substrate double-side patterning,” Opt. Eng. 52(2), 30021–30027 (2013).

Kim, K. H.

T. Jeong, K. H. Kim, S. J. Lee, S. H. Lee, S. R. Jeon, S. H. Lim, J. H. Baek, and J. K. Lee, “Aluminum nitride ceramic substrates-bonded vertical light-emitting diodes,” IEEE Photonics Technol. Lett. 21(13), 890–892 (2009).
[CrossRef]

Kim, L.

L. Yang, J. Hu, L. Kim, and M. W. Shin, “Thermal analysis of GaN-based light emitting diodes with different chip sizes,” IEEE Trans. Device Mater. Reliab. 8(3), 571–575 (2008).
[CrossRef]

Kim, S.

S. Kim, “Vertical structure GaN-based light emitting diodes with electrochemically deposited stress-free Nickel substrate,” J. Electrochem. Soc. 159(4), D196–D199 (2012).
[CrossRef]

Krames, M. R.

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN-GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 011091 (2006).
[CrossRef]

Lee, H. J.

J. S. Ha, S. W. Lee, H. J. Lee, H. J. Lee, S. H. Lee, H. Goto, T. Kato, K. Fujii, M. W. Cho, and T. Yao, “The fabrication of vertical light-emitting diodes using chemical lift-off process,” IEEE Photonics Technol. Lett. 20(3), 175–177 (2008).
[CrossRef]

J. S. Ha, S. W. Lee, H. J. Lee, H. J. Lee, S. H. Lee, H. Goto, T. Kato, K. Fujii, M. W. Cho, and T. Yao, “The fabrication of vertical light-emitting diodes using chemical lift-off process,” IEEE Photonics Technol. Lett. 20(3), 175–177 (2008).
[CrossRef]

Lee, H. K.

Lee, J. K.

T. Jeong, K. H. Kim, S. J. Lee, S. H. Lee, S. R. Jeon, S. H. Lim, J. H. Baek, and J. K. Lee, “Aluminum nitride ceramic substrates-bonded vertical light-emitting diodes,” IEEE Photonics Technol. Lett. 21(13), 890–892 (2009).
[CrossRef]

Lee, J. L.

Lee, S. H.

T. Jeong, K. H. Kim, S. J. Lee, S. H. Lee, S. R. Jeon, S. H. Lim, J. H. Baek, and J. K. Lee, “Aluminum nitride ceramic substrates-bonded vertical light-emitting diodes,” IEEE Photonics Technol. Lett. 21(13), 890–892 (2009).
[CrossRef]

J. S. Ha, S. W. Lee, H. J. Lee, H. J. Lee, S. H. Lee, H. Goto, T. Kato, K. Fujii, M. W. Cho, and T. Yao, “The fabrication of vertical light-emitting diodes using chemical lift-off process,” IEEE Photonics Technol. Lett. 20(3), 175–177 (2008).
[CrossRef]

Lee, S. J.

T. Jeong, K. H. Kim, S. J. Lee, S. H. Lee, S. R. Jeon, S. H. Lim, J. H. Baek, and J. K. Lee, “Aluminum nitride ceramic substrates-bonded vertical light-emitting diodes,” IEEE Photonics Technol. Lett. 21(13), 890–892 (2009).
[CrossRef]

Lee, S. W.

J. S. Ha, S. W. Lee, H. J. Lee, H. J. Lee, S. H. Lee, H. Goto, T. Kato, K. Fujii, M. W. Cho, and T. Yao, “The fabrication of vertical light-emitting diodes using chemical lift-off process,” IEEE Photonics Technol. Lett. 20(3), 175–177 (2008).
[CrossRef]

Lim, S. H.

T. Jeong, K. H. Kim, S. J. Lee, S. H. Lee, S. R. Jeon, S. H. Lim, J. H. Baek, and J. K. Lee, “Aluminum nitride ceramic substrates-bonded vertical light-emitting diodes,” IEEE Photonics Technol. Lett. 21(13), 890–892 (2009).
[CrossRef]

Lin, R. C.

Y. J. Tsai, R. C. Lin, H. L. Hu, C. P. Hsu, S. Y. Wen, and C. C. Yang, “Novel electrode design for integrated thin-film GaN LED package with efficiency improvement,” IEEE Photonics Technol. Lett. 25(6), 609–611 (2013).
[CrossRef]

R. H. Horng, H. L. Hu, R. C. Lin, L. S. Tang, C. P. Hsu, and S. L. Ou, “Cup-shaped copper heat spreader in multi-chip high-power LEDs application,” Opt. Express 20(S5), A597–A605 (2012).
[CrossRef] [PubMed]

R. H. Horng, H. L. Hu, R. C. Lin, K. C. Peng, and Y. C. Chiang, “Thermal behavior of sapphire-based InGaN light-emitting diodes with cap-shaped copper–diamond substrates,” Electrochem. Solid-State Lett. 14(5), H215–H217 (2011).
[CrossRef]

Margalith, T.

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN-GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 011091 (2006).
[CrossRef]

Martin, P. S.

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN-GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 011091 (2006).
[CrossRef]

Matsubara, K.

K. Nakahara, K. Tamura, M. Sakai, D. Nakagawa, N. Ito, M. Sonobe, H. Takasu, H. Tampo, P. Fons, K. Matsubara, K. Iwata, A. Yamada, and S. Niki, “Improved external efficiency InGaN-based light-emitting diodes with transparent conductive Ga-doped ZnO as p-electrodes,” Jpn. J. Appl. Phys. 43(2A), L180–L182 (2004).
[CrossRef]

Nakagawa, D.

K. Nakahara, K. Tamura, M. Sakai, D. Nakagawa, N. Ito, M. Sonobe, H. Takasu, H. Tampo, P. Fons, K. Matsubara, K. Iwata, A. Yamada, and S. Niki, “Improved external efficiency InGaN-based light-emitting diodes with transparent conductive Ga-doped ZnO as p-electrodes,” Jpn. J. Appl. Phys. 43(2A), L180–L182 (2004).
[CrossRef]

Nakahara, K.

K. Nakahara, K. Tamura, M. Sakai, D. Nakagawa, N. Ito, M. Sonobe, H. Takasu, H. Tampo, P. Fons, K. Matsubara, K. Iwata, A. Yamada, and S. Niki, “Improved external efficiency InGaN-based light-emitting diodes with transparent conductive Ga-doped ZnO as p-electrodes,” Jpn. J. Appl. Phys. 43(2A), L180–L182 (2004).
[CrossRef]

Niki, S.

K. Nakahara, K. Tamura, M. Sakai, D. Nakagawa, N. Ito, M. Sonobe, H. Takasu, H. Tampo, P. Fons, K. Matsubara, K. Iwata, A. Yamada, and S. Niki, “Improved external efficiency InGaN-based light-emitting diodes with transparent conductive Ga-doped ZnO as p-electrodes,” Jpn. J. Appl. Phys. 43(2A), L180–L182 (2004).
[CrossRef]

Ou, S. L.

Peng, K. C.

R. H. Horng, H. L. Hu, R. C. Lin, K. C. Peng, and Y. C. Chiang, “Thermal behavior of sapphire-based InGaN light-emitting diodes with cap-shaped copper–diamond substrates,” Electrochem. Solid-State Lett. 14(5), H215–H217 (2011).
[CrossRef]

Ryu, C. J.

Sakai, M.

K. Nakahara, K. Tamura, M. Sakai, D. Nakagawa, N. Ito, M. Sonobe, H. Takasu, H. Tampo, P. Fons, K. Matsubara, K. Iwata, A. Yamada, and S. Niki, “Improved external efficiency InGaN-based light-emitting diodes with transparent conductive Ga-doped ZnO as p-electrodes,” Jpn. J. Appl. Phys. 43(2A), L180–L182 (2004).
[CrossRef]

Schubert, E. F.

X. Guo and E. F. Schubert, “Current crowding in GaNÕInGaN light emitting diodes on insulating substrates,” J. Appl. Phys. 90(8), 4191–4195 (2001).
[CrossRef]

Shchekin, O. B.

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN-GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 011091 (2006).
[CrossRef]

Shim, J. I.

J. S. Yun, S. M. Hwang, and J. I. Shim, “Current spreading analysis in vertical electrode GaN-based blue LEDs,” Proc. Int. Soc. Opt. Photonics. 6841, 0L1–0L8 (2007).

Shin, M. W.

L. Yang, J. Hu, L. Kim, and M. W. Shin, “Thermal analysis of GaN-based light emitting diodes with different chip sizes,” IEEE Trans. Device Mater. Reliab. 8(3), 571–575 (2008).
[CrossRef]

Son, J. H.

Song, Y. H.

Sonobe, M.

K. Nakahara, K. Tamura, M. Sakai, D. Nakagawa, N. Ito, M. Sonobe, H. Takasu, H. Tampo, P. Fons, K. Matsubara, K. Iwata, A. Yamada, and S. Niki, “Improved external efficiency InGaN-based light-emitting diodes with transparent conductive Ga-doped ZnO as p-electrodes,” Jpn. J. Appl. Phys. 43(2A), L180–L182 (2004).
[CrossRef]

Steigerwald, D. A.

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN-GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 011091 (2006).
[CrossRef]

Sung, C. M.

P. Y. Tsai, H. K. Huang, C. M. Sung, M. C. Kan, and Y. H. Wang, “InGaN/GaN vertical light-emitting diodes with diamondlike carbon/titanium heat-spreading layers,” IEEE Electron Device Lett. 34(8), 1029–1031 (2013).
[CrossRef]

Takasu, H.

K. Nakahara, K. Tamura, M. Sakai, D. Nakagawa, N. Ito, M. Sonobe, H. Takasu, H. Tampo, P. Fons, K. Matsubara, K. Iwata, A. Yamada, and S. Niki, “Improved external efficiency InGaN-based light-emitting diodes with transparent conductive Ga-doped ZnO as p-electrodes,” Jpn. J. Appl. Phys. 43(2A), L180–L182 (2004).
[CrossRef]

Tampo, H.

K. Nakahara, K. Tamura, M. Sakai, D. Nakagawa, N. Ito, M. Sonobe, H. Takasu, H. Tampo, P. Fons, K. Matsubara, K. Iwata, A. Yamada, and S. Niki, “Improved external efficiency InGaN-based light-emitting diodes with transparent conductive Ga-doped ZnO as p-electrodes,” Jpn. J. Appl. Phys. 43(2A), L180–L182 (2004).
[CrossRef]

Tamura, K.

K. Nakahara, K. Tamura, M. Sakai, D. Nakagawa, N. Ito, M. Sonobe, H. Takasu, H. Tampo, P. Fons, K. Matsubara, K. Iwata, A. Yamada, and S. Niki, “Improved external efficiency InGaN-based light-emitting diodes with transparent conductive Ga-doped ZnO as p-electrodes,” Jpn. J. Appl. Phys. 43(2A), L180–L182 (2004).
[CrossRef]

Tang, L. S.

Trottier, T. A.

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN-GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 011091 (2006).
[CrossRef]

Tsai, P. Y.

P. Y. Tsai, H. K. Huang, C. M. Sung, M. C. Kan, and Y. H. Wang, “InGaN/GaN vertical light-emitting diodes with diamondlike carbon/titanium heat-spreading layers,” IEEE Electron Device Lett. 34(8), 1029–1031 (2013).
[CrossRef]

Tsai, Y. J.

Y. J. Tsai, R. C. Lin, H. L. Hu, C. P. Hsu, S. Y. Wen, and C. C. Yang, “Novel electrode design for integrated thin-film GaN LED package with efficiency improvement,” IEEE Photonics Technol. Lett. 25(6), 609–611 (2013).
[CrossRef]

R. H. Horng, H. L. Hu, M. T. Chu, Y. L. Tsai, Y. J. Tsai, C. P. Hsu, and D. S. Wuu, “Performance of flip-chip thin-film GaN light-emitting diodes with and without patterned sapphires,” IEEE Photonics Technol. Lett. 22(8), 550–552 (2010).
[CrossRef]

Tsai, Y. L.

R. H. Horng, H. L. Hu, M. T. Chu, Y. L. Tsai, Y. J. Tsai, C. P. Hsu, and D. S. Wuu, “Performance of flip-chip thin-film GaN light-emitting diodes with and without patterned sapphires,” IEEE Photonics Technol. Lett. 22(8), 550–552 (2010).
[CrossRef]

Wang, Y. H.

P. Y. Tsai, H. K. Huang, C. M. Sung, M. C. Kan, and Y. H. Wang, “InGaN/GaN vertical light-emitting diodes with diamondlike carbon/titanium heat-spreading layers,” IEEE Electron Device Lett. 34(8), 1029–1031 (2013).
[CrossRef]

Wen, S. Y.

Y. J. Tsai, R. C. Lin, H. L. Hu, C. P. Hsu, S. Y. Wen, and C. C. Yang, “Novel electrode design for integrated thin-film GaN LED package with efficiency improvement,” IEEE Photonics Technol. Lett. 25(6), 609–611 (2013).
[CrossRef]

Wuu, D. S.

R. H. Horng, H. L. Hu, M. T. Chu, Y. L. Tsai, Y. J. Tsai, C. P. Hsu, and D. S. Wuu, “Performance of flip-chip thin-film GaN light-emitting diodes with and without patterned sapphires,” IEEE Photonics Technol. Lett. 22(8), 550–552 (2010).
[CrossRef]

Yamada, A.

K. Nakahara, K. Tamura, M. Sakai, D. Nakagawa, N. Ito, M. Sonobe, H. Takasu, H. Tampo, P. Fons, K. Matsubara, K. Iwata, A. Yamada, and S. Niki, “Improved external efficiency InGaN-based light-emitting diodes with transparent conductive Ga-doped ZnO as p-electrodes,” Jpn. J. Appl. Phys. 43(2A), L180–L182 (2004).
[CrossRef]

Yang, C. C.

Y. J. Tsai, R. C. Lin, H. L. Hu, C. P. Hsu, S. Y. Wen, and C. C. Yang, “Novel electrode design for integrated thin-film GaN LED package with efficiency improvement,” IEEE Photonics Technol. Lett. 25(6), 609–611 (2013).
[CrossRef]

Yang, L.

L. Yang, J. Hu, L. Kim, and M. W. Shin, “Thermal analysis of GaN-based light emitting diodes with different chip sizes,” IEEE Trans. Device Mater. Reliab. 8(3), 571–575 (2008).
[CrossRef]

Yao, T.

J. S. Ha, S. W. Lee, H. J. Lee, H. J. Lee, S. H. Lee, H. Goto, T. Kato, K. Fujii, M. W. Cho, and T. Yao, “The fabrication of vertical light-emitting diodes using chemical lift-off process,” IEEE Photonics Technol. Lett. 20(3), 175–177 (2008).
[CrossRef]

Yun, J. S.

J. S. Yun, S. M. Hwang, and J. I. Shim, “Current spreading analysis in vertical electrode GaN-based blue LEDs,” Proc. Int. Soc. Opt. Photonics. 6841, 0L1–0L8 (2007).

Appl. Phys. Lett. (1)

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN-GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 011091 (2006).
[CrossRef]

Electrochem. Solid-State Lett. (1)

R. H. Horng, H. L. Hu, R. C. Lin, K. C. Peng, and Y. C. Chiang, “Thermal behavior of sapphire-based InGaN light-emitting diodes with cap-shaped copper–diamond substrates,” Electrochem. Solid-State Lett. 14(5), H215–H217 (2011).
[CrossRef]

IEEE Electron Device Lett. (1)

P. Y. Tsai, H. K. Huang, C. M. Sung, M. C. Kan, and Y. H. Wang, “InGaN/GaN vertical light-emitting diodes with diamondlike carbon/titanium heat-spreading layers,” IEEE Electron Device Lett. 34(8), 1029–1031 (2013).
[CrossRef]

IEEE Photonics Technol. Lett. (4)

Y. J. Tsai, R. C. Lin, H. L. Hu, C. P. Hsu, S. Y. Wen, and C. C. Yang, “Novel electrode design for integrated thin-film GaN LED package with efficiency improvement,” IEEE Photonics Technol. Lett. 25(6), 609–611 (2013).
[CrossRef]

T. Jeong, K. H. Kim, S. J. Lee, S. H. Lee, S. R. Jeon, S. H. Lim, J. H. Baek, and J. K. Lee, “Aluminum nitride ceramic substrates-bonded vertical light-emitting diodes,” IEEE Photonics Technol. Lett. 21(13), 890–892 (2009).
[CrossRef]

R. H. Horng, H. L. Hu, M. T. Chu, Y. L. Tsai, Y. J. Tsai, C. P. Hsu, and D. S. Wuu, “Performance of flip-chip thin-film GaN light-emitting diodes with and without patterned sapphires,” IEEE Photonics Technol. Lett. 22(8), 550–552 (2010).
[CrossRef]

J. S. Ha, S. W. Lee, H. J. Lee, H. J. Lee, S. H. Lee, H. Goto, T. Kato, K. Fujii, M. W. Cho, and T. Yao, “The fabrication of vertical light-emitting diodes using chemical lift-off process,” IEEE Photonics Technol. Lett. 20(3), 175–177 (2008).
[CrossRef]

IEEE Trans. Device Mater. Reliab. (1)

L. Yang, J. Hu, L. Kim, and M. W. Shin, “Thermal analysis of GaN-based light emitting diodes with different chip sizes,” IEEE Trans. Device Mater. Reliab. 8(3), 571–575 (2008).
[CrossRef]

J. Appl. Phys. (1)

X. Guo and E. F. Schubert, “Current crowding in GaNÕInGaN light emitting diodes on insulating substrates,” J. Appl. Phys. 90(8), 4191–4195 (2001).
[CrossRef]

J. Electrochem. Soc. (1)

S. Kim, “Vertical structure GaN-based light emitting diodes with electrochemically deposited stress-free Nickel substrate,” J. Electrochem. Soc. 159(4), D196–D199 (2012).
[CrossRef]

Jpn. J. Appl. Phys. (1)

K. Nakahara, K. Tamura, M. Sakai, D. Nakagawa, N. Ito, M. Sonobe, H. Takasu, H. Tampo, P. Fons, K. Matsubara, K. Iwata, A. Yamada, and S. Niki, “Improved external efficiency InGaN-based light-emitting diodes with transparent conductive Ga-doped ZnO as p-electrodes,” Jpn. J. Appl. Phys. 43(2A), L180–L182 (2004).
[CrossRef]

Opt. Eng. (1)

J. K. Ho, S. U. Cho, E. S. Kim, C. S. Kim, and M. Y. Jeong, “Improving light-emitting diode performance through sapphire substrate double-side patterning,” Opt. Eng. 52(2), 30021–30027 (2013).

Opt. Express (2)

Proc. Int. Soc. Opt. Photonics. (1)

J. S. Yun, S. M. Hwang, and J. I. Shim, “Current spreading analysis in vertical electrode GaN-based blue LEDs,” Proc. Int. Soc. Opt. Photonics. 6841, 0L1–0L8 (2007).

Other (1)

C. J. M. Lasance and A. Poppe, Thermal Management for LED Applications (Solid State Lighting Technology and Application Series) (Springer, 2014).

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Figures (6)

Fig. 1
Fig. 1

Schematic diagram of TFP LED structure.

Fig. 2
Fig. 2

Integration packaging process flow of TFP LED, (a) chip to wafer eutectic bonding, (b) laser lift-off and Ga remove, (c) U-GaN etching, (d) N-pad metallization, (e) wire bonding and (f) lens molding and singulation.

Fig. 3
Fig. 3

Photograph of the fabricated TFP LED.

Fig. 4
Fig. 4

Results of leakage current test of multiple TFP LEDs on packaging submount.

Fig. 5
Fig. 5

Thermal resistance measured by T3ster (a) TFP with direct eutectic bonding; (b) TFP with flux eutectic bonding; (c) commercial face-up LED package and (d) commercial thin-GaN LED package.

Fig. 6
Fig. 6

Test results of normalized light output power of TFP and commercial high power LED packages.

Tables (1)

Tables Icon

Table 1 Shear force test results of different eutectic bonding process.

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