Abstract

By incorporating a 1550 nm laser diode, bidirectional laser triggering was investigated in a two-terminal planar device based on vanadium dioxide (VO2) thin film grown by sol-gel method. A specific bias voltage range enabling the bidirectional laser triggering was experimentally found from the current-voltage characteristics of the VO2-based device, which was measured in a current-controlled mode. At a bias voltage selected within the range, 10 mA bidirectional triggering was implemented with a maximum amplitude switching ratio of ~68.2, and the transient responses of light-triggered currents were also analyzed.

© 2014 Optical Society of America

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    [CrossRef]
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    [CrossRef] [PubMed]
  3. A. Cavalleri, C. Tóth, C. W. Siders, J. A. Squier, F. Ráksi, P. Forget, J. C. Kieffer, “Femtosecond structural dynamics in VO2 during an ultrafast solid-solid phase transition,” Phys. Rev. Lett. 87(23), 237401 (2001).
    [CrossRef] [PubMed]
  4. Y. W. Lee, B.-J. Kim, J.-W. Lim, S. J. Yun, S. Choi, B.-G. Chae, G. Kim, H.-T. Kim, “Metal-insulator transition-induced electrical oscillation in vanadium dioxide thin film,” Appl. Phys. Lett. 92(16), 162903 (2008).
    [CrossRef]
  5. B. K. Ridley, T. B. Watkins, “The possibility of negative resistance effects in semiconductors,” Proc. Phys. Soc. London 78(2), 293–304 (1961).
    [CrossRef]
  6. Y. W. Lee, B.-J. Kim, S. Choi, H.-T. Kim, G. Kim, “Photo-assisted electrical gating in a two-terminal device based on vanadium dioxide thin film,” Opt. Express 15(19), 12108–12113 (2007).
    [CrossRef] [PubMed]
  7. N.-S. Lee, J.-S. Chang, Y.-S. Kwon, “Determination of the NDR and electron transport properties of self-assembled nitro-benzene monolayers using UHV-STM,” KIEE J. Electr. Eng. Technol. 1(3), 366–370 (2006).
    [CrossRef]
  8. Y. W. Lee, B.-J. Kim, S. Choi, Y. W. Lee, H.-T. Kim, “Enhanced photo-assisted electrical gating in vanadium dioxide based on saturation-induced gain modulation of erbium-doped fiber amplifier,” Opt. Express 17(22), 19605–19610 (2009).
    [CrossRef] [PubMed]
  9. Y. W. Lee, E.-S. Kim, B.-S. Shin, S.-M. Lee, “High-performance optical gating in junction device based on vanadium dioxide thin film grown by sol-gel method,” KIEE J. Electr. Eng. Technol. 7(5), 784–788 (2012).
    [CrossRef]
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    [CrossRef]
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    [CrossRef]
  12. G. Seo, B.-J. Kim, Y. W. Lee, H.-T. Kim, “Photo-assisted bistable switching using Mott transition in two-terminal VO2 device,” Appl. Phys. Lett. 100(1), 011908 (2012).
    [CrossRef]
  13. G. Seo, B.-J. Kim, J. Choi, Y. W. Lee, H.-T. Kim, “Direct current voltage bias effect on laser-induced switching bistability in VO2-based device,” Appl. Phys. Express 5(10), 102201 (2012).
    [CrossRef]
  14. S. Chen, H. Ma, X. Yi, H. Wang, X. Tao, M. Chen, X. Li, C. Ke, “Optical switch based on vanadium dioxide thin films,” Infrared Phys. Technol. 45(4), 239–242 (2004).
    [CrossRef]
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    [CrossRef]
  20. Y. Oh, Y. Kim, “Gate workfunction optimization of a 32 nm metal gate MOSFET for low power applications,” KIEE J. Electr. Eng. Technol. 1(2), 237–240 (2006).
    [CrossRef]
  21. B.-G. Chae, H.-T. Kim, S.-J. Yun, B.-J. Kim, Y.-W. Lee, D.-H. Youn, K.-Y. Kang, “Highly oriented VO2 thin films prepared by sol-gel deposition,” Electrochem. Solid-State Lett. 9(1), C12–C14 (2006).
    [CrossRef]
  22. S.-P. Nam, S.-G. Lee, S.-G. Bae, Y.-H. Lee, “Electrical properties of (Bi,Y)4Ti3O12 thin films grown by RF sputtering method,” KIEE J. Electr. Eng. Technol. 2(1), 98–101 (2007).
    [CrossRef]
  23. Y.-K. Choi, “Mach–Zehnder type tandem optical switch/modulator using a single-mode interconnecting waveguide and its switching characteristics,” KIEE J. Electr. Eng. Technol. 4(2), 287–291 (2009).
    [CrossRef]
  24. G. Seo, B.-J. Kim, Y. W. Lee, S. Choi, J.-H. Shin, H.-T. Kim, “Experimental investigation of dimension effect on electrical oscillation in planar device based on VO2 thin film,” Thin Solid Films 519(10), 3383–3387 (2011).
    [CrossRef]
  25. H.-T. Kim, B.-G. Chae, D.-H. Youn, S.-L. Maeng, G. Kim, K.-Y. Kang, Y.-S. Lim, “Mechanism and observation of Mott transition in VO2-based two- and three-terminal devices,” New J. Phys. 6, 52 (2004).
    [CrossRef]
  26. Y. Zhou, X. Chen, C. Ko, Z. Yang, C. Mouli, S. Ramanathan, “Voltage-triggered ultrafast phase transition in vanadium dioxide switches,” IEEE Electron. Device Lett. 34(2), 220–222 (2013).
    [CrossRef]
  27. B. V. Manikandan, S. C. Raja, P. Venkatesh, “Available transfer capability enhancement with FACTS devices in the deregulated electricity market,” KIEE J. Electr. Eng. Technol. 6(1), 14–24 (2011).
    [CrossRef]

2013

P. A. Do, A. Hendaoui, E. Mortazy, M. Chaker, A. Hache, “Vanadium dioxide spatial light modulator for applications beyond 1200 nm,” Opt. Commun. 288, 23–26 (2013).
[CrossRef]

Y. Zhou, X. Chen, C. Ko, Z. Yang, C. Mouli, S. Ramanathan, “Voltage-triggered ultrafast phase transition in vanadium dioxide switches,” IEEE Electron. Device Lett. 34(2), 220–222 (2013).
[CrossRef]

J. D. Ryckman, K. A. Hallman, R. E. Marvel, R. F. Haglund, S. M. Weiss, “Ultra-compact silicon photonic devices reconfigured by an optically induced semiconductor-to-metal transition,” Opt. Express 21(9), 10753–10763 (2013).
[CrossRef] [PubMed]

2012

G. Seo, B.-J. Kim, Y. W. Lee, H.-T. Kim, “Photo-assisted bistable switching using Mott transition in two-terminal VO2 device,” Appl. Phys. Lett. 100(1), 011908 (2012).
[CrossRef]

G. Seo, B.-J. Kim, J. Choi, Y. W. Lee, H.-T. Kim, “Direct current voltage bias effect on laser-induced switching bistability in VO2-based device,” Appl. Phys. Express 5(10), 102201 (2012).
[CrossRef]

J. D. Ryckman, V. Diez-Blanco, J. Nag, R. E. Marvel, B. K. Choi, R. F. Haglund, S. M. Weiss, “Photothermal optical modulation of ultra-compact hybrid Si-VO2 ring resonators,” Opt. Express 20(12), 13215–13225 (2012).
[CrossRef] [PubMed]

G. Seo, B.-J. Kim, H.-T. Kim, Y. W. Lee, “Photo-assisted electrical oscillation in two-terminal device based on vanadium dioxide thin film,” J. Lightwave Technol. 30(16), 2718–2724 (2012).
[CrossRef]

Y. W. Lee, E.-S. Kim, B.-S. Shin, S.-M. Lee, “High-performance optical gating in junction device based on vanadium dioxide thin film grown by sol-gel method,” KIEE J. Electr. Eng. Technol. 7(5), 784–788 (2012).
[CrossRef]

2011

B. V. Manikandan, S. C. Raja, P. Venkatesh, “Available transfer capability enhancement with FACTS devices in the deregulated electricity market,” KIEE J. Electr. Eng. Technol. 6(1), 14–24 (2011).
[CrossRef]

G. Seo, B.-J. Kim, Y. W. Lee, S. Choi, J.-H. Shin, H.-T. Kim, “Experimental investigation of dimension effect on electrical oscillation in planar device based on VO2 thin film,” Thin Solid Films 519(10), 3383–3387 (2011).
[CrossRef]

2010

2009

Y. W. Lee, B.-J. Kim, S. Choi, Y. W. Lee, H.-T. Kim, “Enhanced photo-assisted electrical gating in vanadium dioxide based on saturation-induced gain modulation of erbium-doped fiber amplifier,” Opt. Express 17(22), 19605–19610 (2009).
[CrossRef] [PubMed]

Y.-K. Choi, “Mach–Zehnder type tandem optical switch/modulator using a single-mode interconnecting waveguide and its switching characteristics,” KIEE J. Electr. Eng. Technol. 4(2), 287–291 (2009).
[CrossRef]

2008

C. Ko, S. Ramanathan, “Effect of ultraviolet irradiation on electrical resistance and phase transition characteristics of thin film vanadium oxide,” J. Appl. Phys. 103(10), 106104 (2008).
[CrossRef]

Y. W. Lee, B.-J. Kim, J.-W. Lim, S. J. Yun, S. Choi, B.-G. Chae, G. Kim, H.-T. Kim, “Metal-insulator transition-induced electrical oscillation in vanadium dioxide thin film,” Appl. Phys. Lett. 92(16), 162903 (2008).
[CrossRef]

2007

E. Arcangeletti, L. Baldassarre, D. Di Castro, S. Lupi, L. Malavasi, C. Marini, A. Perucchi, P. Postorino, “Evidence of a pressure-induced metallization process in monoclinic VO2.,” Phys. Rev. Lett. 98(19), 196406 (2007).
[CrossRef] [PubMed]

S.-P. Nam, S.-G. Lee, S.-G. Bae, Y.-H. Lee, “Electrical properties of (Bi,Y)4Ti3O12 thin films grown by RF sputtering method,” KIEE J. Electr. Eng. Technol. 2(1), 98–101 (2007).
[CrossRef]

Y. W. Lee, B.-J. Kim, S. Choi, H.-T. Kim, G. Kim, “Photo-assisted electrical gating in a two-terminal device based on vanadium dioxide thin film,” Opt. Express 15(19), 12108–12113 (2007).
[CrossRef] [PubMed]

2006

Y. Oh, Y. Kim, “Gate workfunction optimization of a 32 nm metal gate MOSFET for low power applications,” KIEE J. Electr. Eng. Technol. 1(2), 237–240 (2006).
[CrossRef]

B.-G. Chae, H.-T. Kim, S.-J. Yun, B.-J. Kim, Y.-W. Lee, D.-H. Youn, K.-Y. Kang, “Highly oriented VO2 thin films prepared by sol-gel deposition,” Electrochem. Solid-State Lett. 9(1), C12–C14 (2006).
[CrossRef]

N.-S. Lee, J.-S. Chang, Y.-S. Kwon, “Determination of the NDR and electron transport properties of self-assembled nitro-benzene monolayers using UHV-STM,” KIEE J. Electr. Eng. Technol. 1(3), 366–370 (2006).
[CrossRef]

2005

H. Wang, X. Yi, S. Chen, X. Fua, “Fabrication of vanadium oxide micro-optical switches,” Sens. Actuators A Phys. 122(1), 108–112 (2005).
[CrossRef]

2004

S. Chen, H. Ma, X. Yi, H. Wang, X. Tao, M. Chen, X. Li, C. Ke, “Optical switch based on vanadium dioxide thin films,” Infrared Phys. Technol. 45(4), 239–242 (2004).
[CrossRef]

H.-T. Kim, B.-G. Chae, D.-H. Youn, S.-L. Maeng, G. Kim, K.-Y. Kang, Y.-S. Lim, “Mechanism and observation of Mott transition in VO2-based two- and three-terminal devices,” New J. Phys. 6, 52 (2004).
[CrossRef]

2001

A. Cavalleri, C. Tóth, C. W. Siders, J. A. Squier, F. Ráksi, P. Forget, J. C. Kieffer, “Femtosecond structural dynamics in VO2 during an ultrafast solid-solid phase transition,” Phys. Rev. Lett. 87(23), 237401 (2001).
[CrossRef] [PubMed]

1961

B. K. Ridley, T. B. Watkins, “The possibility of negative resistance effects in semiconductors,” Proc. Phys. Soc. London 78(2), 293–304 (1961).
[CrossRef]

1959

F. J. Morin, “Oxides which show a metal–insulator transition at the Neel temperature,” Phys. Rev. Lett. 3(1), 34–36 (1959).
[CrossRef]

Arcangeletti, E.

E. Arcangeletti, L. Baldassarre, D. Di Castro, S. Lupi, L. Malavasi, C. Marini, A. Perucchi, P. Postorino, “Evidence of a pressure-induced metallization process in monoclinic VO2.,” Phys. Rev. Lett. 98(19), 196406 (2007).
[CrossRef] [PubMed]

Atwater, H. A.

Bae, S.-G.

S.-P. Nam, S.-G. Lee, S.-G. Bae, Y.-H. Lee, “Electrical properties of (Bi,Y)4Ti3O12 thin films grown by RF sputtering method,” KIEE J. Electr. Eng. Technol. 2(1), 98–101 (2007).
[CrossRef]

Baldassarre, L.

E. Arcangeletti, L. Baldassarre, D. Di Castro, S. Lupi, L. Malavasi, C. Marini, A. Perucchi, P. Postorino, “Evidence of a pressure-induced metallization process in monoclinic VO2.,” Phys. Rev. Lett. 98(19), 196406 (2007).
[CrossRef] [PubMed]

Briggs, R. M.

Cavalleri, A.

A. Cavalleri, C. Tóth, C. W. Siders, J. A. Squier, F. Ráksi, P. Forget, J. C. Kieffer, “Femtosecond structural dynamics in VO2 during an ultrafast solid-solid phase transition,” Phys. Rev. Lett. 87(23), 237401 (2001).
[CrossRef] [PubMed]

Chae, B.-G.

Y. W. Lee, B.-J. Kim, J.-W. Lim, S. J. Yun, S. Choi, B.-G. Chae, G. Kim, H.-T. Kim, “Metal-insulator transition-induced electrical oscillation in vanadium dioxide thin film,” Appl. Phys. Lett. 92(16), 162903 (2008).
[CrossRef]

B.-G. Chae, H.-T. Kim, S.-J. Yun, B.-J. Kim, Y.-W. Lee, D.-H. Youn, K.-Y. Kang, “Highly oriented VO2 thin films prepared by sol-gel deposition,” Electrochem. Solid-State Lett. 9(1), C12–C14 (2006).
[CrossRef]

H.-T. Kim, B.-G. Chae, D.-H. Youn, S.-L. Maeng, G. Kim, K.-Y. Kang, Y.-S. Lim, “Mechanism and observation of Mott transition in VO2-based two- and three-terminal devices,” New J. Phys. 6, 52 (2004).
[CrossRef]

Chaker, M.

P. A. Do, A. Hendaoui, E. Mortazy, M. Chaker, A. Hache, “Vanadium dioxide spatial light modulator for applications beyond 1200 nm,” Opt. Commun. 288, 23–26 (2013).
[CrossRef]

Chang, J.-S.

N.-S. Lee, J.-S. Chang, Y.-S. Kwon, “Determination of the NDR and electron transport properties of self-assembled nitro-benzene monolayers using UHV-STM,” KIEE J. Electr. Eng. Technol. 1(3), 366–370 (2006).
[CrossRef]

Chen, M.

S. Chen, H. Ma, X. Yi, H. Wang, X. Tao, M. Chen, X. Li, C. Ke, “Optical switch based on vanadium dioxide thin films,” Infrared Phys. Technol. 45(4), 239–242 (2004).
[CrossRef]

Chen, S.

H. Wang, X. Yi, S. Chen, X. Fua, “Fabrication of vanadium oxide micro-optical switches,” Sens. Actuators A Phys. 122(1), 108–112 (2005).
[CrossRef]

S. Chen, H. Ma, X. Yi, H. Wang, X. Tao, M. Chen, X. Li, C. Ke, “Optical switch based on vanadium dioxide thin films,” Infrared Phys. Technol. 45(4), 239–242 (2004).
[CrossRef]

Chen, X.

Y. Zhou, X. Chen, C. Ko, Z. Yang, C. Mouli, S. Ramanathan, “Voltage-triggered ultrafast phase transition in vanadium dioxide switches,” IEEE Electron. Device Lett. 34(2), 220–222 (2013).
[CrossRef]

Choi, B. K.

Choi, J.

G. Seo, B.-J. Kim, J. Choi, Y. W. Lee, H.-T. Kim, “Direct current voltage bias effect on laser-induced switching bistability in VO2-based device,” Appl. Phys. Express 5(10), 102201 (2012).
[CrossRef]

Choi, S.

G. Seo, B.-J. Kim, Y. W. Lee, S. Choi, J.-H. Shin, H.-T. Kim, “Experimental investigation of dimension effect on electrical oscillation in planar device based on VO2 thin film,” Thin Solid Films 519(10), 3383–3387 (2011).
[CrossRef]

Y. W. Lee, B.-J. Kim, S. Choi, Y. W. Lee, H.-T. Kim, “Enhanced photo-assisted electrical gating in vanadium dioxide based on saturation-induced gain modulation of erbium-doped fiber amplifier,” Opt. Express 17(22), 19605–19610 (2009).
[CrossRef] [PubMed]

Y. W. Lee, B.-J. Kim, J.-W. Lim, S. J. Yun, S. Choi, B.-G. Chae, G. Kim, H.-T. Kim, “Metal-insulator transition-induced electrical oscillation in vanadium dioxide thin film,” Appl. Phys. Lett. 92(16), 162903 (2008).
[CrossRef]

Y. W. Lee, B.-J. Kim, S. Choi, H.-T. Kim, G. Kim, “Photo-assisted electrical gating in a two-terminal device based on vanadium dioxide thin film,” Opt. Express 15(19), 12108–12113 (2007).
[CrossRef] [PubMed]

Choi, Y.-K.

Y.-K. Choi, “Mach–Zehnder type tandem optical switch/modulator using a single-mode interconnecting waveguide and its switching characteristics,” KIEE J. Electr. Eng. Technol. 4(2), 287–291 (2009).
[CrossRef]

Di Castro, D.

E. Arcangeletti, L. Baldassarre, D. Di Castro, S. Lupi, L. Malavasi, C. Marini, A. Perucchi, P. Postorino, “Evidence of a pressure-induced metallization process in monoclinic VO2.,” Phys. Rev. Lett. 98(19), 196406 (2007).
[CrossRef] [PubMed]

Diez-Blanco, V.

Do, P. A.

P. A. Do, A. Hendaoui, E. Mortazy, M. Chaker, A. Hache, “Vanadium dioxide spatial light modulator for applications beyond 1200 nm,” Opt. Commun. 288, 23–26 (2013).
[CrossRef]

Forget, P.

A. Cavalleri, C. Tóth, C. W. Siders, J. A. Squier, F. Ráksi, P. Forget, J. C. Kieffer, “Femtosecond structural dynamics in VO2 during an ultrafast solid-solid phase transition,” Phys. Rev. Lett. 87(23), 237401 (2001).
[CrossRef] [PubMed]

Fua, X.

H. Wang, X. Yi, S. Chen, X. Fua, “Fabrication of vanadium oxide micro-optical switches,” Sens. Actuators A Phys. 122(1), 108–112 (2005).
[CrossRef]

Hache, A.

P. A. Do, A. Hendaoui, E. Mortazy, M. Chaker, A. Hache, “Vanadium dioxide spatial light modulator for applications beyond 1200 nm,” Opt. Commun. 288, 23–26 (2013).
[CrossRef]

Haglund, R. F.

Hallman, K. A.

Hendaoui, A.

P. A. Do, A. Hendaoui, E. Mortazy, M. Chaker, A. Hache, “Vanadium dioxide spatial light modulator for applications beyond 1200 nm,” Opt. Commun. 288, 23–26 (2013).
[CrossRef]

Kang, K.-Y.

B.-G. Chae, H.-T. Kim, S.-J. Yun, B.-J. Kim, Y.-W. Lee, D.-H. Youn, K.-Y. Kang, “Highly oriented VO2 thin films prepared by sol-gel deposition,” Electrochem. Solid-State Lett. 9(1), C12–C14 (2006).
[CrossRef]

H.-T. Kim, B.-G. Chae, D.-H. Youn, S.-L. Maeng, G. Kim, K.-Y. Kang, Y.-S. Lim, “Mechanism and observation of Mott transition in VO2-based two- and three-terminal devices,” New J. Phys. 6, 52 (2004).
[CrossRef]

Ke, C.

S. Chen, H. Ma, X. Yi, H. Wang, X. Tao, M. Chen, X. Li, C. Ke, “Optical switch based on vanadium dioxide thin films,” Infrared Phys. Technol. 45(4), 239–242 (2004).
[CrossRef]

Kieffer, J. C.

A. Cavalleri, C. Tóth, C. W. Siders, J. A. Squier, F. Ráksi, P. Forget, J. C. Kieffer, “Femtosecond structural dynamics in VO2 during an ultrafast solid-solid phase transition,” Phys. Rev. Lett. 87(23), 237401 (2001).
[CrossRef] [PubMed]

Kim, B.-J.

G. Seo, B.-J. Kim, H.-T. Kim, Y. W. Lee, “Photo-assisted electrical oscillation in two-terminal device based on vanadium dioxide thin film,” J. Lightwave Technol. 30(16), 2718–2724 (2012).
[CrossRef]

G. Seo, B.-J. Kim, J. Choi, Y. W. Lee, H.-T. Kim, “Direct current voltage bias effect on laser-induced switching bistability in VO2-based device,” Appl. Phys. Express 5(10), 102201 (2012).
[CrossRef]

G. Seo, B.-J. Kim, Y. W. Lee, H.-T. Kim, “Photo-assisted bistable switching using Mott transition in two-terminal VO2 device,” Appl. Phys. Lett. 100(1), 011908 (2012).
[CrossRef]

G. Seo, B.-J. Kim, Y. W. Lee, S. Choi, J.-H. Shin, H.-T. Kim, “Experimental investigation of dimension effect on electrical oscillation in planar device based on VO2 thin film,” Thin Solid Films 519(10), 3383–3387 (2011).
[CrossRef]

Y. W. Lee, B.-J. Kim, S. Choi, Y. W. Lee, H.-T. Kim, “Enhanced photo-assisted electrical gating in vanadium dioxide based on saturation-induced gain modulation of erbium-doped fiber amplifier,” Opt. Express 17(22), 19605–19610 (2009).
[CrossRef] [PubMed]

Y. W. Lee, B.-J. Kim, J.-W. Lim, S. J. Yun, S. Choi, B.-G. Chae, G. Kim, H.-T. Kim, “Metal-insulator transition-induced electrical oscillation in vanadium dioxide thin film,” Appl. Phys. Lett. 92(16), 162903 (2008).
[CrossRef]

Y. W. Lee, B.-J. Kim, S. Choi, H.-T. Kim, G. Kim, “Photo-assisted electrical gating in a two-terminal device based on vanadium dioxide thin film,” Opt. Express 15(19), 12108–12113 (2007).
[CrossRef] [PubMed]

B.-G. Chae, H.-T. Kim, S.-J. Yun, B.-J. Kim, Y.-W. Lee, D.-H. Youn, K.-Y. Kang, “Highly oriented VO2 thin films prepared by sol-gel deposition,” Electrochem. Solid-State Lett. 9(1), C12–C14 (2006).
[CrossRef]

Kim, E.-S.

Y. W. Lee, E.-S. Kim, B.-S. Shin, S.-M. Lee, “High-performance optical gating in junction device based on vanadium dioxide thin film grown by sol-gel method,” KIEE J. Electr. Eng. Technol. 7(5), 784–788 (2012).
[CrossRef]

Kim, G.

Y. W. Lee, B.-J. Kim, J.-W. Lim, S. J. Yun, S. Choi, B.-G. Chae, G. Kim, H.-T. Kim, “Metal-insulator transition-induced electrical oscillation in vanadium dioxide thin film,” Appl. Phys. Lett. 92(16), 162903 (2008).
[CrossRef]

Y. W. Lee, B.-J. Kim, S. Choi, H.-T. Kim, G. Kim, “Photo-assisted electrical gating in a two-terminal device based on vanadium dioxide thin film,” Opt. Express 15(19), 12108–12113 (2007).
[CrossRef] [PubMed]

H.-T. Kim, B.-G. Chae, D.-H. Youn, S.-L. Maeng, G. Kim, K.-Y. Kang, Y.-S. Lim, “Mechanism and observation of Mott transition in VO2-based two- and three-terminal devices,” New J. Phys. 6, 52 (2004).
[CrossRef]

Kim, H.-T.

G. Seo, B.-J. Kim, J. Choi, Y. W. Lee, H.-T. Kim, “Direct current voltage bias effect on laser-induced switching bistability in VO2-based device,” Appl. Phys. Express 5(10), 102201 (2012).
[CrossRef]

G. Seo, B.-J. Kim, H.-T. Kim, Y. W. Lee, “Photo-assisted electrical oscillation in two-terminal device based on vanadium dioxide thin film,” J. Lightwave Technol. 30(16), 2718–2724 (2012).
[CrossRef]

G. Seo, B.-J. Kim, Y. W. Lee, H.-T. Kim, “Photo-assisted bistable switching using Mott transition in two-terminal VO2 device,” Appl. Phys. Lett. 100(1), 011908 (2012).
[CrossRef]

G. Seo, B.-J. Kim, Y. W. Lee, S. Choi, J.-H. Shin, H.-T. Kim, “Experimental investigation of dimension effect on electrical oscillation in planar device based on VO2 thin film,” Thin Solid Films 519(10), 3383–3387 (2011).
[CrossRef]

Y. W. Lee, B.-J. Kim, S. Choi, Y. W. Lee, H.-T. Kim, “Enhanced photo-assisted electrical gating in vanadium dioxide based on saturation-induced gain modulation of erbium-doped fiber amplifier,” Opt. Express 17(22), 19605–19610 (2009).
[CrossRef] [PubMed]

Y. W. Lee, B.-J. Kim, J.-W. Lim, S. J. Yun, S. Choi, B.-G. Chae, G. Kim, H.-T. Kim, “Metal-insulator transition-induced electrical oscillation in vanadium dioxide thin film,” Appl. Phys. Lett. 92(16), 162903 (2008).
[CrossRef]

Y. W. Lee, B.-J. Kim, S. Choi, H.-T. Kim, G. Kim, “Photo-assisted electrical gating in a two-terminal device based on vanadium dioxide thin film,” Opt. Express 15(19), 12108–12113 (2007).
[CrossRef] [PubMed]

B.-G. Chae, H.-T. Kim, S.-J. Yun, B.-J. Kim, Y.-W. Lee, D.-H. Youn, K.-Y. Kang, “Highly oriented VO2 thin films prepared by sol-gel deposition,” Electrochem. Solid-State Lett. 9(1), C12–C14 (2006).
[CrossRef]

H.-T. Kim, B.-G. Chae, D.-H. Youn, S.-L. Maeng, G. Kim, K.-Y. Kang, Y.-S. Lim, “Mechanism and observation of Mott transition in VO2-based two- and three-terminal devices,” New J. Phys. 6, 52 (2004).
[CrossRef]

Kim, Y.

Y. Oh, Y. Kim, “Gate workfunction optimization of a 32 nm metal gate MOSFET for low power applications,” KIEE J. Electr. Eng. Technol. 1(2), 237–240 (2006).
[CrossRef]

Ko, C.

Y. Zhou, X. Chen, C. Ko, Z. Yang, C. Mouli, S. Ramanathan, “Voltage-triggered ultrafast phase transition in vanadium dioxide switches,” IEEE Electron. Device Lett. 34(2), 220–222 (2013).
[CrossRef]

C. Ko, S. Ramanathan, “Effect of ultraviolet irradiation on electrical resistance and phase transition characteristics of thin film vanadium oxide,” J. Appl. Phys. 103(10), 106104 (2008).
[CrossRef]

Kwon, Y.-S.

N.-S. Lee, J.-S. Chang, Y.-S. Kwon, “Determination of the NDR and electron transport properties of self-assembled nitro-benzene monolayers using UHV-STM,” KIEE J. Electr. Eng. Technol. 1(3), 366–370 (2006).
[CrossRef]

Lee, N.-S.

N.-S. Lee, J.-S. Chang, Y.-S. Kwon, “Determination of the NDR and electron transport properties of self-assembled nitro-benzene monolayers using UHV-STM,” KIEE J. Electr. Eng. Technol. 1(3), 366–370 (2006).
[CrossRef]

Lee, S.-G.

S.-P. Nam, S.-G. Lee, S.-G. Bae, Y.-H. Lee, “Electrical properties of (Bi,Y)4Ti3O12 thin films grown by RF sputtering method,” KIEE J. Electr. Eng. Technol. 2(1), 98–101 (2007).
[CrossRef]

Lee, S.-M.

Y. W. Lee, E.-S. Kim, B.-S. Shin, S.-M. Lee, “High-performance optical gating in junction device based on vanadium dioxide thin film grown by sol-gel method,” KIEE J. Electr. Eng. Technol. 7(5), 784–788 (2012).
[CrossRef]

Lee, Y. W.

G. Seo, B.-J. Kim, J. Choi, Y. W. Lee, H.-T. Kim, “Direct current voltage bias effect on laser-induced switching bistability in VO2-based device,” Appl. Phys. Express 5(10), 102201 (2012).
[CrossRef]

Y. W. Lee, E.-S. Kim, B.-S. Shin, S.-M. Lee, “High-performance optical gating in junction device based on vanadium dioxide thin film grown by sol-gel method,” KIEE J. Electr. Eng. Technol. 7(5), 784–788 (2012).
[CrossRef]

G. Seo, B.-J. Kim, H.-T. Kim, Y. W. Lee, “Photo-assisted electrical oscillation in two-terminal device based on vanadium dioxide thin film,” J. Lightwave Technol. 30(16), 2718–2724 (2012).
[CrossRef]

G. Seo, B.-J. Kim, Y. W. Lee, H.-T. Kim, “Photo-assisted bistable switching using Mott transition in two-terminal VO2 device,” Appl. Phys. Lett. 100(1), 011908 (2012).
[CrossRef]

G. Seo, B.-J. Kim, Y. W. Lee, S. Choi, J.-H. Shin, H.-T. Kim, “Experimental investigation of dimension effect on electrical oscillation in planar device based on VO2 thin film,” Thin Solid Films 519(10), 3383–3387 (2011).
[CrossRef]

Y. W. Lee, B.-J. Kim, S. Choi, Y. W. Lee, H.-T. Kim, “Enhanced photo-assisted electrical gating in vanadium dioxide based on saturation-induced gain modulation of erbium-doped fiber amplifier,” Opt. Express 17(22), 19605–19610 (2009).
[CrossRef] [PubMed]

Y. W. Lee, B.-J. Kim, S. Choi, Y. W. Lee, H.-T. Kim, “Enhanced photo-assisted electrical gating in vanadium dioxide based on saturation-induced gain modulation of erbium-doped fiber amplifier,” Opt. Express 17(22), 19605–19610 (2009).
[CrossRef] [PubMed]

Y. W. Lee, B.-J. Kim, J.-W. Lim, S. J. Yun, S. Choi, B.-G. Chae, G. Kim, H.-T. Kim, “Metal-insulator transition-induced electrical oscillation in vanadium dioxide thin film,” Appl. Phys. Lett. 92(16), 162903 (2008).
[CrossRef]

Y. W. Lee, B.-J. Kim, S. Choi, H.-T. Kim, G. Kim, “Photo-assisted electrical gating in a two-terminal device based on vanadium dioxide thin film,” Opt. Express 15(19), 12108–12113 (2007).
[CrossRef] [PubMed]

Lee, Y.-H.

S.-P. Nam, S.-G. Lee, S.-G. Bae, Y.-H. Lee, “Electrical properties of (Bi,Y)4Ti3O12 thin films grown by RF sputtering method,” KIEE J. Electr. Eng. Technol. 2(1), 98–101 (2007).
[CrossRef]

Lee, Y.-W.

B.-G. Chae, H.-T. Kim, S.-J. Yun, B.-J. Kim, Y.-W. Lee, D.-H. Youn, K.-Y. Kang, “Highly oriented VO2 thin films prepared by sol-gel deposition,” Electrochem. Solid-State Lett. 9(1), C12–C14 (2006).
[CrossRef]

Li, X.

S. Chen, H. Ma, X. Yi, H. Wang, X. Tao, M. Chen, X. Li, C. Ke, “Optical switch based on vanadium dioxide thin films,” Infrared Phys. Technol. 45(4), 239–242 (2004).
[CrossRef]

Lim, J.-W.

Y. W. Lee, B.-J. Kim, J.-W. Lim, S. J. Yun, S. Choi, B.-G. Chae, G. Kim, H.-T. Kim, “Metal-insulator transition-induced electrical oscillation in vanadium dioxide thin film,” Appl. Phys. Lett. 92(16), 162903 (2008).
[CrossRef]

Lim, Y.-S.

H.-T. Kim, B.-G. Chae, D.-H. Youn, S.-L. Maeng, G. Kim, K.-Y. Kang, Y.-S. Lim, “Mechanism and observation of Mott transition in VO2-based two- and three-terminal devices,” New J. Phys. 6, 52 (2004).
[CrossRef]

Lupi, S.

E. Arcangeletti, L. Baldassarre, D. Di Castro, S. Lupi, L. Malavasi, C. Marini, A. Perucchi, P. Postorino, “Evidence of a pressure-induced metallization process in monoclinic VO2.,” Phys. Rev. Lett. 98(19), 196406 (2007).
[CrossRef] [PubMed]

Ma, H.

S. Chen, H. Ma, X. Yi, H. Wang, X. Tao, M. Chen, X. Li, C. Ke, “Optical switch based on vanadium dioxide thin films,” Infrared Phys. Technol. 45(4), 239–242 (2004).
[CrossRef]

Maeng, S.-L.

H.-T. Kim, B.-G. Chae, D.-H. Youn, S.-L. Maeng, G. Kim, K.-Y. Kang, Y.-S. Lim, “Mechanism and observation of Mott transition in VO2-based two- and three-terminal devices,” New J. Phys. 6, 52 (2004).
[CrossRef]

Malavasi, L.

E. Arcangeletti, L. Baldassarre, D. Di Castro, S. Lupi, L. Malavasi, C. Marini, A. Perucchi, P. Postorino, “Evidence of a pressure-induced metallization process in monoclinic VO2.,” Phys. Rev. Lett. 98(19), 196406 (2007).
[CrossRef] [PubMed]

Manikandan, B. V.

B. V. Manikandan, S. C. Raja, P. Venkatesh, “Available transfer capability enhancement with FACTS devices in the deregulated electricity market,” KIEE J. Electr. Eng. Technol. 6(1), 14–24 (2011).
[CrossRef]

Marini, C.

E. Arcangeletti, L. Baldassarre, D. Di Castro, S. Lupi, L. Malavasi, C. Marini, A. Perucchi, P. Postorino, “Evidence of a pressure-induced metallization process in monoclinic VO2.,” Phys. Rev. Lett. 98(19), 196406 (2007).
[CrossRef] [PubMed]

Marvel, R. E.

Morin, F. J.

F. J. Morin, “Oxides which show a metal–insulator transition at the Neel temperature,” Phys. Rev. Lett. 3(1), 34–36 (1959).
[CrossRef]

Mortazy, E.

P. A. Do, A. Hendaoui, E. Mortazy, M. Chaker, A. Hache, “Vanadium dioxide spatial light modulator for applications beyond 1200 nm,” Opt. Commun. 288, 23–26 (2013).
[CrossRef]

Mouli, C.

Y. Zhou, X. Chen, C. Ko, Z. Yang, C. Mouli, S. Ramanathan, “Voltage-triggered ultrafast phase transition in vanadium dioxide switches,” IEEE Electron. Device Lett. 34(2), 220–222 (2013).
[CrossRef]

Nag, J.

Nam, S.-P.

S.-P. Nam, S.-G. Lee, S.-G. Bae, Y.-H. Lee, “Electrical properties of (Bi,Y)4Ti3O12 thin films grown by RF sputtering method,” KIEE J. Electr. Eng. Technol. 2(1), 98–101 (2007).
[CrossRef]

Oh, Y.

Y. Oh, Y. Kim, “Gate workfunction optimization of a 32 nm metal gate MOSFET for low power applications,” KIEE J. Electr. Eng. Technol. 1(2), 237–240 (2006).
[CrossRef]

Perucchi, A.

E. Arcangeletti, L. Baldassarre, D. Di Castro, S. Lupi, L. Malavasi, C. Marini, A. Perucchi, P. Postorino, “Evidence of a pressure-induced metallization process in monoclinic VO2.,” Phys. Rev. Lett. 98(19), 196406 (2007).
[CrossRef] [PubMed]

Postorino, P.

E. Arcangeletti, L. Baldassarre, D. Di Castro, S. Lupi, L. Malavasi, C. Marini, A. Perucchi, P. Postorino, “Evidence of a pressure-induced metallization process in monoclinic VO2.,” Phys. Rev. Lett. 98(19), 196406 (2007).
[CrossRef] [PubMed]

Pryce, I. M.

Raja, S. C.

B. V. Manikandan, S. C. Raja, P. Venkatesh, “Available transfer capability enhancement with FACTS devices in the deregulated electricity market,” KIEE J. Electr. Eng. Technol. 6(1), 14–24 (2011).
[CrossRef]

Ráksi, F.

A. Cavalleri, C. Tóth, C. W. Siders, J. A. Squier, F. Ráksi, P. Forget, J. C. Kieffer, “Femtosecond structural dynamics in VO2 during an ultrafast solid-solid phase transition,” Phys. Rev. Lett. 87(23), 237401 (2001).
[CrossRef] [PubMed]

Ramanathan, S.

Y. Zhou, X. Chen, C. Ko, Z. Yang, C. Mouli, S. Ramanathan, “Voltage-triggered ultrafast phase transition in vanadium dioxide switches,” IEEE Electron. Device Lett. 34(2), 220–222 (2013).
[CrossRef]

C. Ko, S. Ramanathan, “Effect of ultraviolet irradiation on electrical resistance and phase transition characteristics of thin film vanadium oxide,” J. Appl. Phys. 103(10), 106104 (2008).
[CrossRef]

Ridley, B. K.

B. K. Ridley, T. B. Watkins, “The possibility of negative resistance effects in semiconductors,” Proc. Phys. Soc. London 78(2), 293–304 (1961).
[CrossRef]

Ryckman, J. D.

Seo, G.

G. Seo, B.-J. Kim, J. Choi, Y. W. Lee, H.-T. Kim, “Direct current voltage bias effect on laser-induced switching bistability in VO2-based device,” Appl. Phys. Express 5(10), 102201 (2012).
[CrossRef]

G. Seo, B.-J. Kim, H.-T. Kim, Y. W. Lee, “Photo-assisted electrical oscillation in two-terminal device based on vanadium dioxide thin film,” J. Lightwave Technol. 30(16), 2718–2724 (2012).
[CrossRef]

G. Seo, B.-J. Kim, Y. W. Lee, H.-T. Kim, “Photo-assisted bistable switching using Mott transition in two-terminal VO2 device,” Appl. Phys. Lett. 100(1), 011908 (2012).
[CrossRef]

G. Seo, B.-J. Kim, Y. W. Lee, S. Choi, J.-H. Shin, H.-T. Kim, “Experimental investigation of dimension effect on electrical oscillation in planar device based on VO2 thin film,” Thin Solid Films 519(10), 3383–3387 (2011).
[CrossRef]

Shin, B.-S.

Y. W. Lee, E.-S. Kim, B.-S. Shin, S.-M. Lee, “High-performance optical gating in junction device based on vanadium dioxide thin film grown by sol-gel method,” KIEE J. Electr. Eng. Technol. 7(5), 784–788 (2012).
[CrossRef]

Shin, J.-H.

G. Seo, B.-J. Kim, Y. W. Lee, S. Choi, J.-H. Shin, H.-T. Kim, “Experimental investigation of dimension effect on electrical oscillation in planar device based on VO2 thin film,” Thin Solid Films 519(10), 3383–3387 (2011).
[CrossRef]

Siders, C. W.

A. Cavalleri, C. Tóth, C. W. Siders, J. A. Squier, F. Ráksi, P. Forget, J. C. Kieffer, “Femtosecond structural dynamics in VO2 during an ultrafast solid-solid phase transition,” Phys. Rev. Lett. 87(23), 237401 (2001).
[CrossRef] [PubMed]

Squier, J. A.

A. Cavalleri, C. Tóth, C. W. Siders, J. A. Squier, F. Ráksi, P. Forget, J. C. Kieffer, “Femtosecond structural dynamics in VO2 during an ultrafast solid-solid phase transition,” Phys. Rev. Lett. 87(23), 237401 (2001).
[CrossRef] [PubMed]

Tao, X.

S. Chen, H. Ma, X. Yi, H. Wang, X. Tao, M. Chen, X. Li, C. Ke, “Optical switch based on vanadium dioxide thin films,” Infrared Phys. Technol. 45(4), 239–242 (2004).
[CrossRef]

Tóth, C.

A. Cavalleri, C. Tóth, C. W. Siders, J. A. Squier, F. Ráksi, P. Forget, J. C. Kieffer, “Femtosecond structural dynamics in VO2 during an ultrafast solid-solid phase transition,” Phys. Rev. Lett. 87(23), 237401 (2001).
[CrossRef] [PubMed]

Venkatesh, P.

B. V. Manikandan, S. C. Raja, P. Venkatesh, “Available transfer capability enhancement with FACTS devices in the deregulated electricity market,” KIEE J. Electr. Eng. Technol. 6(1), 14–24 (2011).
[CrossRef]

Wang, H.

H. Wang, X. Yi, S. Chen, X. Fua, “Fabrication of vanadium oxide micro-optical switches,” Sens. Actuators A Phys. 122(1), 108–112 (2005).
[CrossRef]

S. Chen, H. Ma, X. Yi, H. Wang, X. Tao, M. Chen, X. Li, C. Ke, “Optical switch based on vanadium dioxide thin films,” Infrared Phys. Technol. 45(4), 239–242 (2004).
[CrossRef]

Watkins, T. B.

B. K. Ridley, T. B. Watkins, “The possibility of negative resistance effects in semiconductors,” Proc. Phys. Soc. London 78(2), 293–304 (1961).
[CrossRef]

Weiss, S. M.

Yang, Z.

Y. Zhou, X. Chen, C. Ko, Z. Yang, C. Mouli, S. Ramanathan, “Voltage-triggered ultrafast phase transition in vanadium dioxide switches,” IEEE Electron. Device Lett. 34(2), 220–222 (2013).
[CrossRef]

Yi, X.

H. Wang, X. Yi, S. Chen, X. Fua, “Fabrication of vanadium oxide micro-optical switches,” Sens. Actuators A Phys. 122(1), 108–112 (2005).
[CrossRef]

S. Chen, H. Ma, X. Yi, H. Wang, X. Tao, M. Chen, X. Li, C. Ke, “Optical switch based on vanadium dioxide thin films,” Infrared Phys. Technol. 45(4), 239–242 (2004).
[CrossRef]

Youn, D.-H.

B.-G. Chae, H.-T. Kim, S.-J. Yun, B.-J. Kim, Y.-W. Lee, D.-H. Youn, K.-Y. Kang, “Highly oriented VO2 thin films prepared by sol-gel deposition,” Electrochem. Solid-State Lett. 9(1), C12–C14 (2006).
[CrossRef]

H.-T. Kim, B.-G. Chae, D.-H. Youn, S.-L. Maeng, G. Kim, K.-Y. Kang, Y.-S. Lim, “Mechanism and observation of Mott transition in VO2-based two- and three-terminal devices,” New J. Phys. 6, 52 (2004).
[CrossRef]

Yun, S. J.

Y. W. Lee, B.-J. Kim, J.-W. Lim, S. J. Yun, S. Choi, B.-G. Chae, G. Kim, H.-T. Kim, “Metal-insulator transition-induced electrical oscillation in vanadium dioxide thin film,” Appl. Phys. Lett. 92(16), 162903 (2008).
[CrossRef]

Yun, S.-J.

B.-G. Chae, H.-T. Kim, S.-J. Yun, B.-J. Kim, Y.-W. Lee, D.-H. Youn, K.-Y. Kang, “Highly oriented VO2 thin films prepared by sol-gel deposition,” Electrochem. Solid-State Lett. 9(1), C12–C14 (2006).
[CrossRef]

Zhou, Y.

Y. Zhou, X. Chen, C. Ko, Z. Yang, C. Mouli, S. Ramanathan, “Voltage-triggered ultrafast phase transition in vanadium dioxide switches,” IEEE Electron. Device Lett. 34(2), 220–222 (2013).
[CrossRef]

Appl. Phys. Express

G. Seo, B.-J. Kim, J. Choi, Y. W. Lee, H.-T. Kim, “Direct current voltage bias effect on laser-induced switching bistability in VO2-based device,” Appl. Phys. Express 5(10), 102201 (2012).
[CrossRef]

Appl. Phys. Lett.

G. Seo, B.-J. Kim, Y. W. Lee, H.-T. Kim, “Photo-assisted bistable switching using Mott transition in two-terminal VO2 device,” Appl. Phys. Lett. 100(1), 011908 (2012).
[CrossRef]

Y. W. Lee, B.-J. Kim, J.-W. Lim, S. J. Yun, S. Choi, B.-G. Chae, G. Kim, H.-T. Kim, “Metal-insulator transition-induced electrical oscillation in vanadium dioxide thin film,” Appl. Phys. Lett. 92(16), 162903 (2008).
[CrossRef]

Electrochem. Solid-State Lett.

B.-G. Chae, H.-T. Kim, S.-J. Yun, B.-J. Kim, Y.-W. Lee, D.-H. Youn, K.-Y. Kang, “Highly oriented VO2 thin films prepared by sol-gel deposition,” Electrochem. Solid-State Lett. 9(1), C12–C14 (2006).
[CrossRef]

IEEE Electron. Device Lett.

Y. Zhou, X. Chen, C. Ko, Z. Yang, C. Mouli, S. Ramanathan, “Voltage-triggered ultrafast phase transition in vanadium dioxide switches,” IEEE Electron. Device Lett. 34(2), 220–222 (2013).
[CrossRef]

Infrared Phys. Technol.

S. Chen, H. Ma, X. Yi, H. Wang, X. Tao, M. Chen, X. Li, C. Ke, “Optical switch based on vanadium dioxide thin films,” Infrared Phys. Technol. 45(4), 239–242 (2004).
[CrossRef]

J. Appl. Phys.

C. Ko, S. Ramanathan, “Effect of ultraviolet irradiation on electrical resistance and phase transition characteristics of thin film vanadium oxide,” J. Appl. Phys. 103(10), 106104 (2008).
[CrossRef]

J. Lightwave Technol.

KIEE J. Electr. Eng. Technol.

N.-S. Lee, J.-S. Chang, Y.-S. Kwon, “Determination of the NDR and electron transport properties of self-assembled nitro-benzene monolayers using UHV-STM,” KIEE J. Electr. Eng. Technol. 1(3), 366–370 (2006).
[CrossRef]

Y. W. Lee, E.-S. Kim, B.-S. Shin, S.-M. Lee, “High-performance optical gating in junction device based on vanadium dioxide thin film grown by sol-gel method,” KIEE J. Electr. Eng. Technol. 7(5), 784–788 (2012).
[CrossRef]

B. V. Manikandan, S. C. Raja, P. Venkatesh, “Available transfer capability enhancement with FACTS devices in the deregulated electricity market,” KIEE J. Electr. Eng. Technol. 6(1), 14–24 (2011).
[CrossRef]

Y. Oh, Y. Kim, “Gate workfunction optimization of a 32 nm metal gate MOSFET for low power applications,” KIEE J. Electr. Eng. Technol. 1(2), 237–240 (2006).
[CrossRef]

S.-P. Nam, S.-G. Lee, S.-G. Bae, Y.-H. Lee, “Electrical properties of (Bi,Y)4Ti3O12 thin films grown by RF sputtering method,” KIEE J. Electr. Eng. Technol. 2(1), 98–101 (2007).
[CrossRef]

Y.-K. Choi, “Mach–Zehnder type tandem optical switch/modulator using a single-mode interconnecting waveguide and its switching characteristics,” KIEE J. Electr. Eng. Technol. 4(2), 287–291 (2009).
[CrossRef]

New J. Phys.

H.-T. Kim, B.-G. Chae, D.-H. Youn, S.-L. Maeng, G. Kim, K.-Y. Kang, Y.-S. Lim, “Mechanism and observation of Mott transition in VO2-based two- and three-terminal devices,” New J. Phys. 6, 52 (2004).
[CrossRef]

Opt. Commun.

P. A. Do, A. Hendaoui, E. Mortazy, M. Chaker, A. Hache, “Vanadium dioxide spatial light modulator for applications beyond 1200 nm,” Opt. Commun. 288, 23–26 (2013).
[CrossRef]

Opt. Express

Phys. Rev. Lett.

F. J. Morin, “Oxides which show a metal–insulator transition at the Neel temperature,” Phys. Rev. Lett. 3(1), 34–36 (1959).
[CrossRef]

E. Arcangeletti, L. Baldassarre, D. Di Castro, S. Lupi, L. Malavasi, C. Marini, A. Perucchi, P. Postorino, “Evidence of a pressure-induced metallization process in monoclinic VO2.,” Phys. Rev. Lett. 98(19), 196406 (2007).
[CrossRef] [PubMed]

A. Cavalleri, C. Tóth, C. W. Siders, J. A. Squier, F. Ráksi, P. Forget, J. C. Kieffer, “Femtosecond structural dynamics in VO2 during an ultrafast solid-solid phase transition,” Phys. Rev. Lett. 87(23), 237401 (2001).
[CrossRef] [PubMed]

Proc. Phys. Soc. London

B. K. Ridley, T. B. Watkins, “The possibility of negative resistance effects in semiconductors,” Proc. Phys. Soc. London 78(2), 293–304 (1961).
[CrossRef]

Sens. Actuators A Phys.

H. Wang, X. Yi, S. Chen, X. Fua, “Fabrication of vanadium oxide micro-optical switches,” Sens. Actuators A Phys. 122(1), 108–112 (2005).
[CrossRef]

Thin Solid Films

G. Seo, B.-J. Kim, Y. W. Lee, S. Choi, J.-H. Shin, H.-T. Kim, “Experimental investigation of dimension effect on electrical oscillation in planar device based on VO2 thin film,” Thin Solid Films 519(10), 3383–3387 (2011).
[CrossRef]

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Figures (3)

Fig. 1
Fig. 1

Experimental setup for bidirectional laser triggering in planar VO2 device. The inset figure in the right upper corner shows the optical microscope image of the fabricated device with a total channel width of 30 μm ( = 6 × W).

Fig. 2
Fig. 2

(a) I-V characteristics of Device I, measured in I-mode with laser switched off (blue square symbols) or on (red circular symbols). (b) Optical gating characteristics of Device I at increasing VS from 0 to 5 V (with laser randomly switched on or off). The inset in Fig. 2(b) indicates the current switching behavior of Device I when the laser is repeatedly switched on or off on a VS range of 3.40−3.45 V.

Fig. 3
Fig. 3

Transient responses of laser-triggered device: Device I for relatively (a) short and (b) long on-state durations and Device II for relatively (c) short and (d) long on-state durations. In the closed-loop circuit, Devices I and II were biased at VS = 3.45 and 2.76 V with RE = 100 and 10 Ω, respectively. The inset of Fig. 3(d) shows I-V characteristics of Device II, measured in I-mode with the laser switched off (blue square symbols) or on (red circular symbols).

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