Abstract

The dependence of laser performance on the active region position in broad-waveguide laser diodes is presented in this paper. Performance of structures with different position of active region is compared in simulation and actual devices. Lasers with active region displaced towards the p-cladding layer outperformed the lasers with active region undisplaced or displaced towards the n-cladding layer both in simulation and experimentally. Maximum output power increased by 25% for devices with active region displaced towards the p-cladding layer.

© 2014 Optical Society of America

Full Article  |  PDF Article

References

  • View by:
  • |
  • |
  • |

  1. G. Iordache, M. Buda, G. A. Acket, T. G. van de Roer, L. M. F. Kaufmann, F. Karouta, C. Jagadish, H. H. Tan, “High power CW output from low confinement asymmetric structure diode laser,” Electron. Lett. 35(2), 148–149 (1999).
    [CrossRef]
  2. Y. Nagashima, S. Onuki, Y. Shimose, A. Yamada, and T. Kikugawa, “1480-nm pump laser with asymmetric quaternary cladding structure achieving high output power of >1.2 W with low power consumption,” in Proceedings of IEEE Semiconductor Laser Conference (Institute of Electrical and Electronics Engineers, 19th International, 2004), pp. 47–48.
    [CrossRef]
  3. A. Guermache, V. Voiriot, N. Bouche, F. Lelarge, D. Locatelli, R. M. Capella, J. Jacquet, “1W fibre coupled power InGaAsP/InP 14xx pump laser for Raman amplification,” Electron. Lett. 40(24), 1535–1536 (2004).
    [CrossRef]
  4. M. Lysevych, H. H. Tan, F. Karouta, L. Fu, C. Jagadish, “Merged beam laser design for reduction of gain-saturation and two-photon absorption in high power single mode semiconductor lasers,” Opt. Express 21(7), 8276–8285 (2013).
    [CrossRef] [PubMed]
  5. L. J. Mawst, A. Bhattacharya, J. Lopez, D. Botez, D. Z. Garbuzov, L. DeMarco, J. C. Connolly, M. Jansen, F. Fang, R. F. Nabiev, “8 W continuous wave front-facet power from broad-waveguide Al-free 980 nm diode lasers,” Appl. Phys. Lett. 69(11), 1532–1534 (1996).
    [CrossRef]
  6. D. Garbuzov, L. Xu, S. R. Forest, R. Menna, R. Martinelli, J. C. Connolly, “1.5 µm wavelength, SCH-MQW InGaAsP/InP broadened-waveguide laser diodes with low internal loss and high output power,” Electron. Lett. 32(18), 1717–1719 (1996).
    [CrossRef]
  7. J. J. Plant, P. W. Juodawlkis, R. K. Huang, J. P. Donnelly, L. J. Missaggia, K. G. Ray, “1.5-μm InGaAsP-InP slab-coupled optical waveguide lasers,” Photon. Technol. Lett. 17(4), 735–737 (2005).
    [CrossRef]
  8. N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, A. L. Stankevich, D. A. Vinokurov, I. S. Tarasov, Zh. I. Alferov, “16W continuous-wave output power from 100 lm-aperture laser with quantum well asymmetric heterostructure,” Electron. Lett. 40(22), 1413–1414 (2004).
    [CrossRef]
  9. R. Nagarajan, “Carrier transport effects in quantum well lasers: an overview,” Opt. Quantum Electron. 26(7), S647–S666 (1994).
    [CrossRef]
  10. H. Yamazaki, A. Tomita, M. Yamaguchi, Y. Sasaki, “Evidence of nonuniform carrier distribution in multiple quantum well lasers,” Appl. Phys. Lett. 71(6), 767–769 (1997).
    [CrossRef]
  11. R. F. Kazarinov, M. R. Pinto, “Carrier transport in laser heterostructures,” J. Quantum Electron. 30(1), 49–53 (1994).
    [CrossRef]
  12. “LaserMOD user guide,” RSOFT Design Group, Inc.
  13. M. Lysevych, H. H. Tan, F. Karouta, C. Jagadish, “Single-step RIE fabrication process of low loss InP waveguide using CH4 / H2 chemistry,” J. Electrochem. Soc. 158(3), H281–H284 (2011).
    [CrossRef]
  14. P. W. A. McIlroy, A. Kurobe, Y. Uematsu, “Analysis and application of theoretical gain curves to the design of multi-quantum-well lasers,” J. Quantum Electron. 21(12), 1958–1963 (1985).
    [CrossRef]
  15. F. Karouta, E. Smalbrugge, W. C. van der Vleuten, S. Gaillard, G. A. Acket, “Fabrication of short GaAs wet-etched mirror lasers and their complex spectral behavior,” J. Quantum Electron. 34(8), 1474–1479 (1998).
    [CrossRef]

2013 (1)

2011 (1)

M. Lysevych, H. H. Tan, F. Karouta, C. Jagadish, “Single-step RIE fabrication process of low loss InP waveguide using CH4 / H2 chemistry,” J. Electrochem. Soc. 158(3), H281–H284 (2011).
[CrossRef]

2005 (1)

J. J. Plant, P. W. Juodawlkis, R. K. Huang, J. P. Donnelly, L. J. Missaggia, K. G. Ray, “1.5-μm InGaAsP-InP slab-coupled optical waveguide lasers,” Photon. Technol. Lett. 17(4), 735–737 (2005).
[CrossRef]

2004 (2)

N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, A. L. Stankevich, D. A. Vinokurov, I. S. Tarasov, Zh. I. Alferov, “16W continuous-wave output power from 100 lm-aperture laser with quantum well asymmetric heterostructure,” Electron. Lett. 40(22), 1413–1414 (2004).
[CrossRef]

A. Guermache, V. Voiriot, N. Bouche, F. Lelarge, D. Locatelli, R. M. Capella, J. Jacquet, “1W fibre coupled power InGaAsP/InP 14xx pump laser for Raman amplification,” Electron. Lett. 40(24), 1535–1536 (2004).
[CrossRef]

1999 (1)

G. Iordache, M. Buda, G. A. Acket, T. G. van de Roer, L. M. F. Kaufmann, F. Karouta, C. Jagadish, H. H. Tan, “High power CW output from low confinement asymmetric structure diode laser,” Electron. Lett. 35(2), 148–149 (1999).
[CrossRef]

1998 (1)

F. Karouta, E. Smalbrugge, W. C. van der Vleuten, S. Gaillard, G. A. Acket, “Fabrication of short GaAs wet-etched mirror lasers and their complex spectral behavior,” J. Quantum Electron. 34(8), 1474–1479 (1998).
[CrossRef]

1997 (1)

H. Yamazaki, A. Tomita, M. Yamaguchi, Y. Sasaki, “Evidence of nonuniform carrier distribution in multiple quantum well lasers,” Appl. Phys. Lett. 71(6), 767–769 (1997).
[CrossRef]

1996 (2)

L. J. Mawst, A. Bhattacharya, J. Lopez, D. Botez, D. Z. Garbuzov, L. DeMarco, J. C. Connolly, M. Jansen, F. Fang, R. F. Nabiev, “8 W continuous wave front-facet power from broad-waveguide Al-free 980 nm diode lasers,” Appl. Phys. Lett. 69(11), 1532–1534 (1996).
[CrossRef]

D. Garbuzov, L. Xu, S. R. Forest, R. Menna, R. Martinelli, J. C. Connolly, “1.5 µm wavelength, SCH-MQW InGaAsP/InP broadened-waveguide laser diodes with low internal loss and high output power,” Electron. Lett. 32(18), 1717–1719 (1996).
[CrossRef]

1994 (2)

R. Nagarajan, “Carrier transport effects in quantum well lasers: an overview,” Opt. Quantum Electron. 26(7), S647–S666 (1994).
[CrossRef]

R. F. Kazarinov, M. R. Pinto, “Carrier transport in laser heterostructures,” J. Quantum Electron. 30(1), 49–53 (1994).
[CrossRef]

1985 (1)

P. W. A. McIlroy, A. Kurobe, Y. Uematsu, “Analysis and application of theoretical gain curves to the design of multi-quantum-well lasers,” J. Quantum Electron. 21(12), 1958–1963 (1985).
[CrossRef]

Acket, G. A.

G. Iordache, M. Buda, G. A. Acket, T. G. van de Roer, L. M. F. Kaufmann, F. Karouta, C. Jagadish, H. H. Tan, “High power CW output from low confinement asymmetric structure diode laser,” Electron. Lett. 35(2), 148–149 (1999).
[CrossRef]

F. Karouta, E. Smalbrugge, W. C. van der Vleuten, S. Gaillard, G. A. Acket, “Fabrication of short GaAs wet-etched mirror lasers and their complex spectral behavior,” J. Quantum Electron. 34(8), 1474–1479 (1998).
[CrossRef]

Alferov, Zh. I.

N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, A. L. Stankevich, D. A. Vinokurov, I. S. Tarasov, Zh. I. Alferov, “16W continuous-wave output power from 100 lm-aperture laser with quantum well asymmetric heterostructure,” Electron. Lett. 40(22), 1413–1414 (2004).
[CrossRef]

Bhattacharya, A.

L. J. Mawst, A. Bhattacharya, J. Lopez, D. Botez, D. Z. Garbuzov, L. DeMarco, J. C. Connolly, M. Jansen, F. Fang, R. F. Nabiev, “8 W continuous wave front-facet power from broad-waveguide Al-free 980 nm diode lasers,” Appl. Phys. Lett. 69(11), 1532–1534 (1996).
[CrossRef]

Botez, D.

L. J. Mawst, A. Bhattacharya, J. Lopez, D. Botez, D. Z. Garbuzov, L. DeMarco, J. C. Connolly, M. Jansen, F. Fang, R. F. Nabiev, “8 W continuous wave front-facet power from broad-waveguide Al-free 980 nm diode lasers,” Appl. Phys. Lett. 69(11), 1532–1534 (1996).
[CrossRef]

Bouche, N.

A. Guermache, V. Voiriot, N. Bouche, F. Lelarge, D. Locatelli, R. M. Capella, J. Jacquet, “1W fibre coupled power InGaAsP/InP 14xx pump laser for Raman amplification,” Electron. Lett. 40(24), 1535–1536 (2004).
[CrossRef]

Buda, M.

G. Iordache, M. Buda, G. A. Acket, T. G. van de Roer, L. M. F. Kaufmann, F. Karouta, C. Jagadish, H. H. Tan, “High power CW output from low confinement asymmetric structure diode laser,” Electron. Lett. 35(2), 148–149 (1999).
[CrossRef]

Capella, R. M.

A. Guermache, V. Voiriot, N. Bouche, F. Lelarge, D. Locatelli, R. M. Capella, J. Jacquet, “1W fibre coupled power InGaAsP/InP 14xx pump laser for Raman amplification,” Electron. Lett. 40(24), 1535–1536 (2004).
[CrossRef]

Connolly, J. C.

D. Garbuzov, L. Xu, S. R. Forest, R. Menna, R. Martinelli, J. C. Connolly, “1.5 µm wavelength, SCH-MQW InGaAsP/InP broadened-waveguide laser diodes with low internal loss and high output power,” Electron. Lett. 32(18), 1717–1719 (1996).
[CrossRef]

L. J. Mawst, A. Bhattacharya, J. Lopez, D. Botez, D. Z. Garbuzov, L. DeMarco, J. C. Connolly, M. Jansen, F. Fang, R. F. Nabiev, “8 W continuous wave front-facet power from broad-waveguide Al-free 980 nm diode lasers,” Appl. Phys. Lett. 69(11), 1532–1534 (1996).
[CrossRef]

DeMarco, L.

L. J. Mawst, A. Bhattacharya, J. Lopez, D. Botez, D. Z. Garbuzov, L. DeMarco, J. C. Connolly, M. Jansen, F. Fang, R. F. Nabiev, “8 W continuous wave front-facet power from broad-waveguide Al-free 980 nm diode lasers,” Appl. Phys. Lett. 69(11), 1532–1534 (1996).
[CrossRef]

Donnelly, J. P.

J. J. Plant, P. W. Juodawlkis, R. K. Huang, J. P. Donnelly, L. J. Missaggia, K. G. Ray, “1.5-μm InGaAsP-InP slab-coupled optical waveguide lasers,” Photon. Technol. Lett. 17(4), 735–737 (2005).
[CrossRef]

Fang, F.

L. J. Mawst, A. Bhattacharya, J. Lopez, D. Botez, D. Z. Garbuzov, L. DeMarco, J. C. Connolly, M. Jansen, F. Fang, R. F. Nabiev, “8 W continuous wave front-facet power from broad-waveguide Al-free 980 nm diode lasers,” Appl. Phys. Lett. 69(11), 1532–1534 (1996).
[CrossRef]

Forest, S. R.

D. Garbuzov, L. Xu, S. R. Forest, R. Menna, R. Martinelli, J. C. Connolly, “1.5 µm wavelength, SCH-MQW InGaAsP/InP broadened-waveguide laser diodes with low internal loss and high output power,” Electron. Lett. 32(18), 1717–1719 (1996).
[CrossRef]

Fu, L.

Gaillard, S.

F. Karouta, E. Smalbrugge, W. C. van der Vleuten, S. Gaillard, G. A. Acket, “Fabrication of short GaAs wet-etched mirror lasers and their complex spectral behavior,” J. Quantum Electron. 34(8), 1474–1479 (1998).
[CrossRef]

Garbuzov, D.

D. Garbuzov, L. Xu, S. R. Forest, R. Menna, R. Martinelli, J. C. Connolly, “1.5 µm wavelength, SCH-MQW InGaAsP/InP broadened-waveguide laser diodes with low internal loss and high output power,” Electron. Lett. 32(18), 1717–1719 (1996).
[CrossRef]

Garbuzov, D. Z.

L. J. Mawst, A. Bhattacharya, J. Lopez, D. Botez, D. Z. Garbuzov, L. DeMarco, J. C. Connolly, M. Jansen, F. Fang, R. F. Nabiev, “8 W continuous wave front-facet power from broad-waveguide Al-free 980 nm diode lasers,” Appl. Phys. Lett. 69(11), 1532–1534 (1996).
[CrossRef]

Guermache, A.

A. Guermache, V. Voiriot, N. Bouche, F. Lelarge, D. Locatelli, R. M. Capella, J. Jacquet, “1W fibre coupled power InGaAsP/InP 14xx pump laser for Raman amplification,” Electron. Lett. 40(24), 1535–1536 (2004).
[CrossRef]

Huang, R. K.

J. J. Plant, P. W. Juodawlkis, R. K. Huang, J. P. Donnelly, L. J. Missaggia, K. G. Ray, “1.5-μm InGaAsP-InP slab-coupled optical waveguide lasers,” Photon. Technol. Lett. 17(4), 735–737 (2005).
[CrossRef]

Iordache, G.

G. Iordache, M. Buda, G. A. Acket, T. G. van de Roer, L. M. F. Kaufmann, F. Karouta, C. Jagadish, H. H. Tan, “High power CW output from low confinement asymmetric structure diode laser,” Electron. Lett. 35(2), 148–149 (1999).
[CrossRef]

Jacquet, J.

A. Guermache, V. Voiriot, N. Bouche, F. Lelarge, D. Locatelli, R. M. Capella, J. Jacquet, “1W fibre coupled power InGaAsP/InP 14xx pump laser for Raman amplification,” Electron. Lett. 40(24), 1535–1536 (2004).
[CrossRef]

Jagadish, C.

M. Lysevych, H. H. Tan, F. Karouta, L. Fu, C. Jagadish, “Merged beam laser design for reduction of gain-saturation and two-photon absorption in high power single mode semiconductor lasers,” Opt. Express 21(7), 8276–8285 (2013).
[CrossRef] [PubMed]

M. Lysevych, H. H. Tan, F. Karouta, C. Jagadish, “Single-step RIE fabrication process of low loss InP waveguide using CH4 / H2 chemistry,” J. Electrochem. Soc. 158(3), H281–H284 (2011).
[CrossRef]

G. Iordache, M. Buda, G. A. Acket, T. G. van de Roer, L. M. F. Kaufmann, F. Karouta, C. Jagadish, H. H. Tan, “High power CW output from low confinement asymmetric structure diode laser,” Electron. Lett. 35(2), 148–149 (1999).
[CrossRef]

Jansen, M.

L. J. Mawst, A. Bhattacharya, J. Lopez, D. Botez, D. Z. Garbuzov, L. DeMarco, J. C. Connolly, M. Jansen, F. Fang, R. F. Nabiev, “8 W continuous wave front-facet power from broad-waveguide Al-free 980 nm diode lasers,” Appl. Phys. Lett. 69(11), 1532–1534 (1996).
[CrossRef]

Juodawlkis, P. W.

J. J. Plant, P. W. Juodawlkis, R. K. Huang, J. P. Donnelly, L. J. Missaggia, K. G. Ray, “1.5-μm InGaAsP-InP slab-coupled optical waveguide lasers,” Photon. Technol. Lett. 17(4), 735–737 (2005).
[CrossRef]

Karouta, F.

M. Lysevych, H. H. Tan, F. Karouta, L. Fu, C. Jagadish, “Merged beam laser design for reduction of gain-saturation and two-photon absorption in high power single mode semiconductor lasers,” Opt. Express 21(7), 8276–8285 (2013).
[CrossRef] [PubMed]

M. Lysevych, H. H. Tan, F. Karouta, C. Jagadish, “Single-step RIE fabrication process of low loss InP waveguide using CH4 / H2 chemistry,” J. Electrochem. Soc. 158(3), H281–H284 (2011).
[CrossRef]

G. Iordache, M. Buda, G. A. Acket, T. G. van de Roer, L. M. F. Kaufmann, F. Karouta, C. Jagadish, H. H. Tan, “High power CW output from low confinement asymmetric structure diode laser,” Electron. Lett. 35(2), 148–149 (1999).
[CrossRef]

F. Karouta, E. Smalbrugge, W. C. van der Vleuten, S. Gaillard, G. A. Acket, “Fabrication of short GaAs wet-etched mirror lasers and their complex spectral behavior,” J. Quantum Electron. 34(8), 1474–1479 (1998).
[CrossRef]

Kaufmann, L. M. F.

G. Iordache, M. Buda, G. A. Acket, T. G. van de Roer, L. M. F. Kaufmann, F. Karouta, C. Jagadish, H. H. Tan, “High power CW output from low confinement asymmetric structure diode laser,” Electron. Lett. 35(2), 148–149 (1999).
[CrossRef]

Kazarinov, R. F.

R. F. Kazarinov, M. R. Pinto, “Carrier transport in laser heterostructures,” J. Quantum Electron. 30(1), 49–53 (1994).
[CrossRef]

Kurobe, A.

P. W. A. McIlroy, A. Kurobe, Y. Uematsu, “Analysis and application of theoretical gain curves to the design of multi-quantum-well lasers,” J. Quantum Electron. 21(12), 1958–1963 (1985).
[CrossRef]

Lelarge, F.

A. Guermache, V. Voiriot, N. Bouche, F. Lelarge, D. Locatelli, R. M. Capella, J. Jacquet, “1W fibre coupled power InGaAsP/InP 14xx pump laser for Raman amplification,” Electron. Lett. 40(24), 1535–1536 (2004).
[CrossRef]

Locatelli, D.

A. Guermache, V. Voiriot, N. Bouche, F. Lelarge, D. Locatelli, R. M. Capella, J. Jacquet, “1W fibre coupled power InGaAsP/InP 14xx pump laser for Raman amplification,” Electron. Lett. 40(24), 1535–1536 (2004).
[CrossRef]

Lopez, J.

L. J. Mawst, A. Bhattacharya, J. Lopez, D. Botez, D. Z. Garbuzov, L. DeMarco, J. C. Connolly, M. Jansen, F. Fang, R. F. Nabiev, “8 W continuous wave front-facet power from broad-waveguide Al-free 980 nm diode lasers,” Appl. Phys. Lett. 69(11), 1532–1534 (1996).
[CrossRef]

Lysevych, M.

M. Lysevych, H. H. Tan, F. Karouta, L. Fu, C. Jagadish, “Merged beam laser design for reduction of gain-saturation and two-photon absorption in high power single mode semiconductor lasers,” Opt. Express 21(7), 8276–8285 (2013).
[CrossRef] [PubMed]

M. Lysevych, H. H. Tan, F. Karouta, C. Jagadish, “Single-step RIE fabrication process of low loss InP waveguide using CH4 / H2 chemistry,” J. Electrochem. Soc. 158(3), H281–H284 (2011).
[CrossRef]

Martinelli, R.

D. Garbuzov, L. Xu, S. R. Forest, R. Menna, R. Martinelli, J. C. Connolly, “1.5 µm wavelength, SCH-MQW InGaAsP/InP broadened-waveguide laser diodes with low internal loss and high output power,” Electron. Lett. 32(18), 1717–1719 (1996).
[CrossRef]

Mawst, L. J.

L. J. Mawst, A. Bhattacharya, J. Lopez, D. Botez, D. Z. Garbuzov, L. DeMarco, J. C. Connolly, M. Jansen, F. Fang, R. F. Nabiev, “8 W continuous wave front-facet power from broad-waveguide Al-free 980 nm diode lasers,” Appl. Phys. Lett. 69(11), 1532–1534 (1996).
[CrossRef]

McIlroy, P. W. A.

P. W. A. McIlroy, A. Kurobe, Y. Uematsu, “Analysis and application of theoretical gain curves to the design of multi-quantum-well lasers,” J. Quantum Electron. 21(12), 1958–1963 (1985).
[CrossRef]

Menna, R.

D. Garbuzov, L. Xu, S. R. Forest, R. Menna, R. Martinelli, J. C. Connolly, “1.5 µm wavelength, SCH-MQW InGaAsP/InP broadened-waveguide laser diodes with low internal loss and high output power,” Electron. Lett. 32(18), 1717–1719 (1996).
[CrossRef]

Missaggia, L. J.

J. J. Plant, P. W. Juodawlkis, R. K. Huang, J. P. Donnelly, L. J. Missaggia, K. G. Ray, “1.5-μm InGaAsP-InP slab-coupled optical waveguide lasers,” Photon. Technol. Lett. 17(4), 735–737 (2005).
[CrossRef]

Nabiev, R. F.

L. J. Mawst, A. Bhattacharya, J. Lopez, D. Botez, D. Z. Garbuzov, L. DeMarco, J. C. Connolly, M. Jansen, F. Fang, R. F. Nabiev, “8 W continuous wave front-facet power from broad-waveguide Al-free 980 nm diode lasers,” Appl. Phys. Lett. 69(11), 1532–1534 (1996).
[CrossRef]

Nagarajan, R.

R. Nagarajan, “Carrier transport effects in quantum well lasers: an overview,” Opt. Quantum Electron. 26(7), S647–S666 (1994).
[CrossRef]

Pikhtin, N. A.

N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, A. L. Stankevich, D. A. Vinokurov, I. S. Tarasov, Zh. I. Alferov, “16W continuous-wave output power from 100 lm-aperture laser with quantum well asymmetric heterostructure,” Electron. Lett. 40(22), 1413–1414 (2004).
[CrossRef]

Pinto, M. R.

R. F. Kazarinov, M. R. Pinto, “Carrier transport in laser heterostructures,” J. Quantum Electron. 30(1), 49–53 (1994).
[CrossRef]

Plant, J. J.

J. J. Plant, P. W. Juodawlkis, R. K. Huang, J. P. Donnelly, L. J. Missaggia, K. G. Ray, “1.5-μm InGaAsP-InP slab-coupled optical waveguide lasers,” Photon. Technol. Lett. 17(4), 735–737 (2005).
[CrossRef]

Ray, K. G.

J. J. Plant, P. W. Juodawlkis, R. K. Huang, J. P. Donnelly, L. J. Missaggia, K. G. Ray, “1.5-μm InGaAsP-InP slab-coupled optical waveguide lasers,” Photon. Technol. Lett. 17(4), 735–737 (2005).
[CrossRef]

Sasaki, Y.

H. Yamazaki, A. Tomita, M. Yamaguchi, Y. Sasaki, “Evidence of nonuniform carrier distribution in multiple quantum well lasers,” Appl. Phys. Lett. 71(6), 767–769 (1997).
[CrossRef]

Slipchenko, S. O.

N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, A. L. Stankevich, D. A. Vinokurov, I. S. Tarasov, Zh. I. Alferov, “16W continuous-wave output power from 100 lm-aperture laser with quantum well asymmetric heterostructure,” Electron. Lett. 40(22), 1413–1414 (2004).
[CrossRef]

Smalbrugge, E.

F. Karouta, E. Smalbrugge, W. C. van der Vleuten, S. Gaillard, G. A. Acket, “Fabrication of short GaAs wet-etched mirror lasers and their complex spectral behavior,” J. Quantum Electron. 34(8), 1474–1479 (1998).
[CrossRef]

Sokolova, Z. N.

N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, A. L. Stankevich, D. A. Vinokurov, I. S. Tarasov, Zh. I. Alferov, “16W continuous-wave output power from 100 lm-aperture laser with quantum well asymmetric heterostructure,” Electron. Lett. 40(22), 1413–1414 (2004).
[CrossRef]

Stankevich, A. L.

N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, A. L. Stankevich, D. A. Vinokurov, I. S. Tarasov, Zh. I. Alferov, “16W continuous-wave output power from 100 lm-aperture laser with quantum well asymmetric heterostructure,” Electron. Lett. 40(22), 1413–1414 (2004).
[CrossRef]

Tan, H. H.

M. Lysevych, H. H. Tan, F. Karouta, L. Fu, C. Jagadish, “Merged beam laser design for reduction of gain-saturation and two-photon absorption in high power single mode semiconductor lasers,” Opt. Express 21(7), 8276–8285 (2013).
[CrossRef] [PubMed]

M. Lysevych, H. H. Tan, F. Karouta, C. Jagadish, “Single-step RIE fabrication process of low loss InP waveguide using CH4 / H2 chemistry,” J. Electrochem. Soc. 158(3), H281–H284 (2011).
[CrossRef]

G. Iordache, M. Buda, G. A. Acket, T. G. van de Roer, L. M. F. Kaufmann, F. Karouta, C. Jagadish, H. H. Tan, “High power CW output from low confinement asymmetric structure diode laser,” Electron. Lett. 35(2), 148–149 (1999).
[CrossRef]

Tarasov, I. S.

N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, A. L. Stankevich, D. A. Vinokurov, I. S. Tarasov, Zh. I. Alferov, “16W continuous-wave output power from 100 lm-aperture laser with quantum well asymmetric heterostructure,” Electron. Lett. 40(22), 1413–1414 (2004).
[CrossRef]

Tomita, A.

H. Yamazaki, A. Tomita, M. Yamaguchi, Y. Sasaki, “Evidence of nonuniform carrier distribution in multiple quantum well lasers,” Appl. Phys. Lett. 71(6), 767–769 (1997).
[CrossRef]

Uematsu, Y.

P. W. A. McIlroy, A. Kurobe, Y. Uematsu, “Analysis and application of theoretical gain curves to the design of multi-quantum-well lasers,” J. Quantum Electron. 21(12), 1958–1963 (1985).
[CrossRef]

van de Roer, T. G.

G. Iordache, M. Buda, G. A. Acket, T. G. van de Roer, L. M. F. Kaufmann, F. Karouta, C. Jagadish, H. H. Tan, “High power CW output from low confinement asymmetric structure diode laser,” Electron. Lett. 35(2), 148–149 (1999).
[CrossRef]

van der Vleuten, W. C.

F. Karouta, E. Smalbrugge, W. C. van der Vleuten, S. Gaillard, G. A. Acket, “Fabrication of short GaAs wet-etched mirror lasers and their complex spectral behavior,” J. Quantum Electron. 34(8), 1474–1479 (1998).
[CrossRef]

Vinokurov, D. A.

N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, A. L. Stankevich, D. A. Vinokurov, I. S. Tarasov, Zh. I. Alferov, “16W continuous-wave output power from 100 lm-aperture laser with quantum well asymmetric heterostructure,” Electron. Lett. 40(22), 1413–1414 (2004).
[CrossRef]

Voiriot, V.

A. Guermache, V. Voiriot, N. Bouche, F. Lelarge, D. Locatelli, R. M. Capella, J. Jacquet, “1W fibre coupled power InGaAsP/InP 14xx pump laser for Raman amplification,” Electron. Lett. 40(24), 1535–1536 (2004).
[CrossRef]

Xu, L.

D. Garbuzov, L. Xu, S. R. Forest, R. Menna, R. Martinelli, J. C. Connolly, “1.5 µm wavelength, SCH-MQW InGaAsP/InP broadened-waveguide laser diodes with low internal loss and high output power,” Electron. Lett. 32(18), 1717–1719 (1996).
[CrossRef]

Yamaguchi, M.

H. Yamazaki, A. Tomita, M. Yamaguchi, Y. Sasaki, “Evidence of nonuniform carrier distribution in multiple quantum well lasers,” Appl. Phys. Lett. 71(6), 767–769 (1997).
[CrossRef]

Yamazaki, H.

H. Yamazaki, A. Tomita, M. Yamaguchi, Y. Sasaki, “Evidence of nonuniform carrier distribution in multiple quantum well lasers,” Appl. Phys. Lett. 71(6), 767–769 (1997).
[CrossRef]

Appl. Phys. Lett. (2)

L. J. Mawst, A. Bhattacharya, J. Lopez, D. Botez, D. Z. Garbuzov, L. DeMarco, J. C. Connolly, M. Jansen, F. Fang, R. F. Nabiev, “8 W continuous wave front-facet power from broad-waveguide Al-free 980 nm diode lasers,” Appl. Phys. Lett. 69(11), 1532–1534 (1996).
[CrossRef]

H. Yamazaki, A. Tomita, M. Yamaguchi, Y. Sasaki, “Evidence of nonuniform carrier distribution in multiple quantum well lasers,” Appl. Phys. Lett. 71(6), 767–769 (1997).
[CrossRef]

Electron. Lett. (4)

D. Garbuzov, L. Xu, S. R. Forest, R. Menna, R. Martinelli, J. C. Connolly, “1.5 µm wavelength, SCH-MQW InGaAsP/InP broadened-waveguide laser diodes with low internal loss and high output power,” Electron. Lett. 32(18), 1717–1719 (1996).
[CrossRef]

N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, A. L. Stankevich, D. A. Vinokurov, I. S. Tarasov, Zh. I. Alferov, “16W continuous-wave output power from 100 lm-aperture laser with quantum well asymmetric heterostructure,” Electron. Lett. 40(22), 1413–1414 (2004).
[CrossRef]

G. Iordache, M. Buda, G. A. Acket, T. G. van de Roer, L. M. F. Kaufmann, F. Karouta, C. Jagadish, H. H. Tan, “High power CW output from low confinement asymmetric structure diode laser,” Electron. Lett. 35(2), 148–149 (1999).
[CrossRef]

A. Guermache, V. Voiriot, N. Bouche, F. Lelarge, D. Locatelli, R. M. Capella, J. Jacquet, “1W fibre coupled power InGaAsP/InP 14xx pump laser for Raman amplification,” Electron. Lett. 40(24), 1535–1536 (2004).
[CrossRef]

J. Electrochem. Soc. (1)

M. Lysevych, H. H. Tan, F. Karouta, C. Jagadish, “Single-step RIE fabrication process of low loss InP waveguide using CH4 / H2 chemistry,” J. Electrochem. Soc. 158(3), H281–H284 (2011).
[CrossRef]

J. Quantum Electron. (3)

P. W. A. McIlroy, A. Kurobe, Y. Uematsu, “Analysis and application of theoretical gain curves to the design of multi-quantum-well lasers,” J. Quantum Electron. 21(12), 1958–1963 (1985).
[CrossRef]

F. Karouta, E. Smalbrugge, W. C. van der Vleuten, S. Gaillard, G. A. Acket, “Fabrication of short GaAs wet-etched mirror lasers and their complex spectral behavior,” J. Quantum Electron. 34(8), 1474–1479 (1998).
[CrossRef]

R. F. Kazarinov, M. R. Pinto, “Carrier transport in laser heterostructures,” J. Quantum Electron. 30(1), 49–53 (1994).
[CrossRef]

Opt. Express (1)

Opt. Quantum Electron. (1)

R. Nagarajan, “Carrier transport effects in quantum well lasers: an overview,” Opt. Quantum Electron. 26(7), S647–S666 (1994).
[CrossRef]

Photon. Technol. Lett. (1)

J. J. Plant, P. W. Juodawlkis, R. K. Huang, J. P. Donnelly, L. J. Missaggia, K. G. Ray, “1.5-μm InGaAsP-InP slab-coupled optical waveguide lasers,” Photon. Technol. Lett. 17(4), 735–737 (2005).
[CrossRef]

Other (2)

Y. Nagashima, S. Onuki, Y. Shimose, A. Yamada, and T. Kikugawa, “1480-nm pump laser with asymmetric quaternary cladding structure achieving high output power of >1.2 W with low power consumption,” in Proceedings of IEEE Semiconductor Laser Conference (Institute of Electrical and Electronics Engineers, 19th International, 2004), pp. 47–48.
[CrossRef]

“LaserMOD user guide,” RSOFT Design Group, Inc.

Cited By

OSA participates in CrossRef's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (7)

Fig. 1
Fig. 1

Calculated concentration of injected electrons and holes into 1000 nm InGaAsP waveguide layer.

Fig. 2
Fig. 2

Simulated light-current curves of the studded structures. The inset shows the enlarged threshold region.

Fig. 3
Fig. 3

Simulated conduction band diagram of the studied structures under identical bias.

Fig. 4
Fig. 4

Simulated hole quasi-Fermi levels of the studied structures under identical bias.

Fig. 5
Fig. 5

Simulated electron quasi-Fermi levels of the studied structures under identical bias.

Fig. 6
Fig. 6

Simulated electron flux of the studied structures. The inset shows the blowup of the p-cladding region of the structure.

Fig. 7
Fig. 7

Averaged measured maximum output power from different device length and different structures. (Lines are a guide to the eye).

Equations (2)

Equations on this page are rendered with MathJax. Learn more.

p(x)= p N0 ( e q V f / k B T 1) e x / L h
n(x)= n P0 ( e q V f / k B T 1) e x / L e

Metrics