Abstract

A new approach to realize ultraviolet (UV) light emitting diodes (LEDs) is using AlN/GaN or AlxGa1-xN/GaN SL structure as active layers. Effect of a uniaxial strain on the degree of polarization (DOP) of Al0.26Ga0.74N/GaN superlattices (SLs) grown on c-plane sapphire substrates has been investigated. Compared with AlN/AlxGa1-xN quantum wells, the DOP of the light emission from Al0.26Ga0.74N/GaN SLs shows an opposite variation tendency with in-plane strain and quantum confinement. The results would be helpful to the structural design of c-plane deep-UV and UVA LEDs to enhance surface emission.

© 2014 Optical Society of America

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  1. Y. Taniyasu, M. Kasu, T. Makimoto, “An aluminium nitride light-emitting diode with a wavelength of 210 nanometres,” Nature 441(7091), 325–328 (2006).
    [CrossRef] [PubMed]
  2. H. Kawanishi, M. Senuma, M. Yamamoto, E. Niikura, T. Nukui, “Extremely weak surface emission from (0001) c-plane AlGaN multiple quantum well structure in deep-ultraviolet spectral region,” Appl. Phys. Lett. 89(8), 081121 (2006).
    [CrossRef]
  3. A. Atsushi Yamaguchi, “Valence band engineering for remarkable enhancement of surface emission in AlGaN deep‐ultraviolet light emitting diodes,” Phys. Status Solidi 5(6c), 2364–2366 (2008).
    [CrossRef]
  4. M. Suzuki, T. Uenoyama, A. Yanase, “First-principles calculations of effective-mass parameters of AlN and GaN,” Phys. Rev. B Condens. Matter 52(11), 8132–8139 (1995).
    [CrossRef] [PubMed]
  5. S. H. Wei, A. Zunger, “Valence band splittings and band offsets of AlN, GaN, and InN,” Appl. Phys. Lett. 69(18), 2719–2721 (1996).
    [CrossRef]
  6. J. Li, K. Nam, M. Nakarmi, J. Lin, H. Jiang, P. Carrier, S.-H. Wei, “Band structure and fundamental optical transitions in wurtzite AlN,” Appl. Phys. Lett. 83(25), 5163–5165 (2003).
    [CrossRef]
  7. Y. Taniyasu, M. Kasu, T. Makimoto, “Radiation and polarization properties of free-exciton emission from AlN (0001) surface,” Appl. Phys. Lett. 90(26), 261911 (2007).
    [CrossRef]
  8. I. Vurgaftman, J. Meyer, “Band parameters for nitrogen-containing semiconductors,” J. Appl. Phys. 94(6), 3675–3696 (2003).
    [CrossRef]
  9. K. Nam, J. Li, M. Nakarmi, J. Lin, H. Jiang, “Unique optical properties of AlGaN alloys and related ultraviolet emitters,” Appl. Phys. Lett. 84(25), 5264–5266 (2004).
    [CrossRef]
  10. S. Chuang, C. Chang, “k⋅ p method for strained wurtzite semiconductors,” Phys. Rev. B 54(4), 2491–2504 (1996).
    [CrossRef]
  11. D. Fu, R. Zhang, B. Wang, Z. Zhang, B. Liu, Z. Xie, X. Xiu, H. Lu, Y. Zheng, G. Edwards, “Strain-modulated valence band engineering for enhancement of surface emission in polar and nonpolar plane AlN films,” Appl. Phys. Lett. 94(19), 191907 (2009).
    [CrossRef]
  12. D. Fu, R. Zhang, B. Wang, B. Liu, Z. Xie, X. Xiu, H. Lu, Y. Zheng, G. Edwards, “Biaxial and uniaxial strain effects on the ultraviolet emission efficiencies of AlxGa1- xN films with different Al concentrations,” J. Appl. Phys. 108(10), 103107 (2010).
    [CrossRef]
  13. T. Sharma, D. Naveh, E. Towe, “Strain-driven light-polarization switching in deep ultraviolet nitride emitters,” Phys. Rev. B 84(3), 035305 (2011).
    [CrossRef]
  14. R. Banal, M. Funato, Y. Kawakami, “Optical anisotropy in [0001]-oriented AlxGa1− xN/AlN quantum wells (x> 0.69),” Phys. Rev. B 79(12), 121308 (2009).
    [CrossRef]
  15. T. M. Al tahtamouni, J. Y. Lin, H. X. Jiang, “Optical polarization in c-plane Al-rich AlN/AlxGa1-xN single quantum wells,” Appl. Phys. Lett. 101(4), 042103 (2012).
    [CrossRef]
  16. K. Kamiya, Y. Ebihara, K. Shiraishi, M. Kasu, “Structural design of AlN/GaN superlattices for deep-ultraviolet light-emitting diodes with high emission efficiency,” Appl. Phys. Lett. 99(15), 151108 (2011).
    [CrossRef]
  17. Y. Taniyasu, M. Kasu, “Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices,” Appl. Phys. Lett. 99(25), 251112 (2011).
    [CrossRef]
  18. E. Liarokapis, D. Papadimitriou, J. Rumberg, W. Richter, “Raman and RAS measurements on uniaxially strained thin semiconductor layers,” Phys. Status Solidi 211(1), 309–316 (1999).
    [CrossRef]

2012

T. M. Al tahtamouni, J. Y. Lin, H. X. Jiang, “Optical polarization in c-plane Al-rich AlN/AlxGa1-xN single quantum wells,” Appl. Phys. Lett. 101(4), 042103 (2012).
[CrossRef]

2011

K. Kamiya, Y. Ebihara, K. Shiraishi, M. Kasu, “Structural design of AlN/GaN superlattices for deep-ultraviolet light-emitting diodes with high emission efficiency,” Appl. Phys. Lett. 99(15), 151108 (2011).
[CrossRef]

Y. Taniyasu, M. Kasu, “Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices,” Appl. Phys. Lett. 99(25), 251112 (2011).
[CrossRef]

T. Sharma, D. Naveh, E. Towe, “Strain-driven light-polarization switching in deep ultraviolet nitride emitters,” Phys. Rev. B 84(3), 035305 (2011).
[CrossRef]

2010

D. Fu, R. Zhang, B. Wang, B. Liu, Z. Xie, X. Xiu, H. Lu, Y. Zheng, G. Edwards, “Biaxial and uniaxial strain effects on the ultraviolet emission efficiencies of AlxGa1- xN films with different Al concentrations,” J. Appl. Phys. 108(10), 103107 (2010).
[CrossRef]

2009

D. Fu, R. Zhang, B. Wang, Z. Zhang, B. Liu, Z. Xie, X. Xiu, H. Lu, Y. Zheng, G. Edwards, “Strain-modulated valence band engineering for enhancement of surface emission in polar and nonpolar plane AlN films,” Appl. Phys. Lett. 94(19), 191907 (2009).
[CrossRef]

R. Banal, M. Funato, Y. Kawakami, “Optical anisotropy in [0001]-oriented AlxGa1− xN/AlN quantum wells (x> 0.69),” Phys. Rev. B 79(12), 121308 (2009).
[CrossRef]

2008

A. Atsushi Yamaguchi, “Valence band engineering for remarkable enhancement of surface emission in AlGaN deep‐ultraviolet light emitting diodes,” Phys. Status Solidi 5(6c), 2364–2366 (2008).
[CrossRef]

2007

Y. Taniyasu, M. Kasu, T. Makimoto, “Radiation and polarization properties of free-exciton emission from AlN (0001) surface,” Appl. Phys. Lett. 90(26), 261911 (2007).
[CrossRef]

2006

Y. Taniyasu, M. Kasu, T. Makimoto, “An aluminium nitride light-emitting diode with a wavelength of 210 nanometres,” Nature 441(7091), 325–328 (2006).
[CrossRef] [PubMed]

H. Kawanishi, M. Senuma, M. Yamamoto, E. Niikura, T. Nukui, “Extremely weak surface emission from (0001) c-plane AlGaN multiple quantum well structure in deep-ultraviolet spectral region,” Appl. Phys. Lett. 89(8), 081121 (2006).
[CrossRef]

2004

K. Nam, J. Li, M. Nakarmi, J. Lin, H. Jiang, “Unique optical properties of AlGaN alloys and related ultraviolet emitters,” Appl. Phys. Lett. 84(25), 5264–5266 (2004).
[CrossRef]

2003

I. Vurgaftman, J. Meyer, “Band parameters for nitrogen-containing semiconductors,” J. Appl. Phys. 94(6), 3675–3696 (2003).
[CrossRef]

J. Li, K. Nam, M. Nakarmi, J. Lin, H. Jiang, P. Carrier, S.-H. Wei, “Band structure and fundamental optical transitions in wurtzite AlN,” Appl. Phys. Lett. 83(25), 5163–5165 (2003).
[CrossRef]

1999

E. Liarokapis, D. Papadimitriou, J. Rumberg, W. Richter, “Raman and RAS measurements on uniaxially strained thin semiconductor layers,” Phys. Status Solidi 211(1), 309–316 (1999).
[CrossRef]

1996

S. Chuang, C. Chang, “k⋅ p method for strained wurtzite semiconductors,” Phys. Rev. B 54(4), 2491–2504 (1996).
[CrossRef]

S. H. Wei, A. Zunger, “Valence band splittings and band offsets of AlN, GaN, and InN,” Appl. Phys. Lett. 69(18), 2719–2721 (1996).
[CrossRef]

1995

M. Suzuki, T. Uenoyama, A. Yanase, “First-principles calculations of effective-mass parameters of AlN and GaN,” Phys. Rev. B Condens. Matter 52(11), 8132–8139 (1995).
[CrossRef] [PubMed]

Al tahtamouni, T. M.

T. M. Al tahtamouni, J. Y. Lin, H. X. Jiang, “Optical polarization in c-plane Al-rich AlN/AlxGa1-xN single quantum wells,” Appl. Phys. Lett. 101(4), 042103 (2012).
[CrossRef]

Atsushi Yamaguchi, A.

A. Atsushi Yamaguchi, “Valence band engineering for remarkable enhancement of surface emission in AlGaN deep‐ultraviolet light emitting diodes,” Phys. Status Solidi 5(6c), 2364–2366 (2008).
[CrossRef]

Banal, R.

R. Banal, M. Funato, Y. Kawakami, “Optical anisotropy in [0001]-oriented AlxGa1− xN/AlN quantum wells (x> 0.69),” Phys. Rev. B 79(12), 121308 (2009).
[CrossRef]

Carrier, P.

J. Li, K. Nam, M. Nakarmi, J. Lin, H. Jiang, P. Carrier, S.-H. Wei, “Band structure and fundamental optical transitions in wurtzite AlN,” Appl. Phys. Lett. 83(25), 5163–5165 (2003).
[CrossRef]

Chang, C.

S. Chuang, C. Chang, “k⋅ p method for strained wurtzite semiconductors,” Phys. Rev. B 54(4), 2491–2504 (1996).
[CrossRef]

Chuang, S.

S. Chuang, C. Chang, “k⋅ p method for strained wurtzite semiconductors,” Phys. Rev. B 54(4), 2491–2504 (1996).
[CrossRef]

Ebihara, Y.

K. Kamiya, Y. Ebihara, K. Shiraishi, M. Kasu, “Structural design of AlN/GaN superlattices for deep-ultraviolet light-emitting diodes with high emission efficiency,” Appl. Phys. Lett. 99(15), 151108 (2011).
[CrossRef]

Edwards, G.

D. Fu, R. Zhang, B. Wang, B. Liu, Z. Xie, X. Xiu, H. Lu, Y. Zheng, G. Edwards, “Biaxial and uniaxial strain effects on the ultraviolet emission efficiencies of AlxGa1- xN films with different Al concentrations,” J. Appl. Phys. 108(10), 103107 (2010).
[CrossRef]

D. Fu, R. Zhang, B. Wang, Z. Zhang, B. Liu, Z. Xie, X. Xiu, H. Lu, Y. Zheng, G. Edwards, “Strain-modulated valence band engineering for enhancement of surface emission in polar and nonpolar plane AlN films,” Appl. Phys. Lett. 94(19), 191907 (2009).
[CrossRef]

Fu, D.

D. Fu, R. Zhang, B. Wang, B. Liu, Z. Xie, X. Xiu, H. Lu, Y. Zheng, G. Edwards, “Biaxial and uniaxial strain effects on the ultraviolet emission efficiencies of AlxGa1- xN films with different Al concentrations,” J. Appl. Phys. 108(10), 103107 (2010).
[CrossRef]

D. Fu, R. Zhang, B. Wang, Z. Zhang, B. Liu, Z. Xie, X. Xiu, H. Lu, Y. Zheng, G. Edwards, “Strain-modulated valence band engineering for enhancement of surface emission in polar and nonpolar plane AlN films,” Appl. Phys. Lett. 94(19), 191907 (2009).
[CrossRef]

Funato, M.

R. Banal, M. Funato, Y. Kawakami, “Optical anisotropy in [0001]-oriented AlxGa1− xN/AlN quantum wells (x> 0.69),” Phys. Rev. B 79(12), 121308 (2009).
[CrossRef]

Jiang, H.

K. Nam, J. Li, M. Nakarmi, J. Lin, H. Jiang, “Unique optical properties of AlGaN alloys and related ultraviolet emitters,” Appl. Phys. Lett. 84(25), 5264–5266 (2004).
[CrossRef]

J. Li, K. Nam, M. Nakarmi, J. Lin, H. Jiang, P. Carrier, S.-H. Wei, “Band structure and fundamental optical transitions in wurtzite AlN,” Appl. Phys. Lett. 83(25), 5163–5165 (2003).
[CrossRef]

Jiang, H. X.

T. M. Al tahtamouni, J. Y. Lin, H. X. Jiang, “Optical polarization in c-plane Al-rich AlN/AlxGa1-xN single quantum wells,” Appl. Phys. Lett. 101(4), 042103 (2012).
[CrossRef]

Kamiya, K.

K. Kamiya, Y. Ebihara, K. Shiraishi, M. Kasu, “Structural design of AlN/GaN superlattices for deep-ultraviolet light-emitting diodes with high emission efficiency,” Appl. Phys. Lett. 99(15), 151108 (2011).
[CrossRef]

Kasu, M.

Y. Taniyasu, M. Kasu, “Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices,” Appl. Phys. Lett. 99(25), 251112 (2011).
[CrossRef]

K. Kamiya, Y. Ebihara, K. Shiraishi, M. Kasu, “Structural design of AlN/GaN superlattices for deep-ultraviolet light-emitting diodes with high emission efficiency,” Appl. Phys. Lett. 99(15), 151108 (2011).
[CrossRef]

Y. Taniyasu, M. Kasu, T. Makimoto, “Radiation and polarization properties of free-exciton emission from AlN (0001) surface,” Appl. Phys. Lett. 90(26), 261911 (2007).
[CrossRef]

Y. Taniyasu, M. Kasu, T. Makimoto, “An aluminium nitride light-emitting diode with a wavelength of 210 nanometres,” Nature 441(7091), 325–328 (2006).
[CrossRef] [PubMed]

Kawakami, Y.

R. Banal, M. Funato, Y. Kawakami, “Optical anisotropy in [0001]-oriented AlxGa1− xN/AlN quantum wells (x> 0.69),” Phys. Rev. B 79(12), 121308 (2009).
[CrossRef]

Kawanishi, H.

H. Kawanishi, M. Senuma, M. Yamamoto, E. Niikura, T. Nukui, “Extremely weak surface emission from (0001) c-plane AlGaN multiple quantum well structure in deep-ultraviolet spectral region,” Appl. Phys. Lett. 89(8), 081121 (2006).
[CrossRef]

Li, J.

K. Nam, J. Li, M. Nakarmi, J. Lin, H. Jiang, “Unique optical properties of AlGaN alloys and related ultraviolet emitters,” Appl. Phys. Lett. 84(25), 5264–5266 (2004).
[CrossRef]

J. Li, K. Nam, M. Nakarmi, J. Lin, H. Jiang, P. Carrier, S.-H. Wei, “Band structure and fundamental optical transitions in wurtzite AlN,” Appl. Phys. Lett. 83(25), 5163–5165 (2003).
[CrossRef]

Liarokapis, E.

E. Liarokapis, D. Papadimitriou, J. Rumberg, W. Richter, “Raman and RAS measurements on uniaxially strained thin semiconductor layers,” Phys. Status Solidi 211(1), 309–316 (1999).
[CrossRef]

Lin, J.

K. Nam, J. Li, M. Nakarmi, J. Lin, H. Jiang, “Unique optical properties of AlGaN alloys and related ultraviolet emitters,” Appl. Phys. Lett. 84(25), 5264–5266 (2004).
[CrossRef]

J. Li, K. Nam, M. Nakarmi, J. Lin, H. Jiang, P. Carrier, S.-H. Wei, “Band structure and fundamental optical transitions in wurtzite AlN,” Appl. Phys. Lett. 83(25), 5163–5165 (2003).
[CrossRef]

Lin, J. Y.

T. M. Al tahtamouni, J. Y. Lin, H. X. Jiang, “Optical polarization in c-plane Al-rich AlN/AlxGa1-xN single quantum wells,” Appl. Phys. Lett. 101(4), 042103 (2012).
[CrossRef]

Liu, B.

D. Fu, R. Zhang, B. Wang, B. Liu, Z. Xie, X. Xiu, H. Lu, Y. Zheng, G. Edwards, “Biaxial and uniaxial strain effects on the ultraviolet emission efficiencies of AlxGa1- xN films with different Al concentrations,” J. Appl. Phys. 108(10), 103107 (2010).
[CrossRef]

D. Fu, R. Zhang, B. Wang, Z. Zhang, B. Liu, Z. Xie, X. Xiu, H. Lu, Y. Zheng, G. Edwards, “Strain-modulated valence band engineering for enhancement of surface emission in polar and nonpolar plane AlN films,” Appl. Phys. Lett. 94(19), 191907 (2009).
[CrossRef]

Lu, H.

D. Fu, R. Zhang, B. Wang, B. Liu, Z. Xie, X. Xiu, H. Lu, Y. Zheng, G. Edwards, “Biaxial and uniaxial strain effects on the ultraviolet emission efficiencies of AlxGa1- xN films with different Al concentrations,” J. Appl. Phys. 108(10), 103107 (2010).
[CrossRef]

D. Fu, R. Zhang, B. Wang, Z. Zhang, B. Liu, Z. Xie, X. Xiu, H. Lu, Y. Zheng, G. Edwards, “Strain-modulated valence band engineering for enhancement of surface emission in polar and nonpolar plane AlN films,” Appl. Phys. Lett. 94(19), 191907 (2009).
[CrossRef]

Makimoto, T.

Y. Taniyasu, M. Kasu, T. Makimoto, “Radiation and polarization properties of free-exciton emission from AlN (0001) surface,” Appl. Phys. Lett. 90(26), 261911 (2007).
[CrossRef]

Y. Taniyasu, M. Kasu, T. Makimoto, “An aluminium nitride light-emitting diode with a wavelength of 210 nanometres,” Nature 441(7091), 325–328 (2006).
[CrossRef] [PubMed]

Meyer, J.

I. Vurgaftman, J. Meyer, “Band parameters for nitrogen-containing semiconductors,” J. Appl. Phys. 94(6), 3675–3696 (2003).
[CrossRef]

Nakarmi, M.

K. Nam, J. Li, M. Nakarmi, J. Lin, H. Jiang, “Unique optical properties of AlGaN alloys and related ultraviolet emitters,” Appl. Phys. Lett. 84(25), 5264–5266 (2004).
[CrossRef]

J. Li, K. Nam, M. Nakarmi, J. Lin, H. Jiang, P. Carrier, S.-H. Wei, “Band structure and fundamental optical transitions in wurtzite AlN,” Appl. Phys. Lett. 83(25), 5163–5165 (2003).
[CrossRef]

Nam, K.

K. Nam, J. Li, M. Nakarmi, J. Lin, H. Jiang, “Unique optical properties of AlGaN alloys and related ultraviolet emitters,” Appl. Phys. Lett. 84(25), 5264–5266 (2004).
[CrossRef]

J. Li, K. Nam, M. Nakarmi, J. Lin, H. Jiang, P. Carrier, S.-H. Wei, “Band structure and fundamental optical transitions in wurtzite AlN,” Appl. Phys. Lett. 83(25), 5163–5165 (2003).
[CrossRef]

Naveh, D.

T. Sharma, D. Naveh, E. Towe, “Strain-driven light-polarization switching in deep ultraviolet nitride emitters,” Phys. Rev. B 84(3), 035305 (2011).
[CrossRef]

Niikura, E.

H. Kawanishi, M. Senuma, M. Yamamoto, E. Niikura, T. Nukui, “Extremely weak surface emission from (0001) c-plane AlGaN multiple quantum well structure in deep-ultraviolet spectral region,” Appl. Phys. Lett. 89(8), 081121 (2006).
[CrossRef]

Nukui, T.

H. Kawanishi, M. Senuma, M. Yamamoto, E. Niikura, T. Nukui, “Extremely weak surface emission from (0001) c-plane AlGaN multiple quantum well structure in deep-ultraviolet spectral region,” Appl. Phys. Lett. 89(8), 081121 (2006).
[CrossRef]

Papadimitriou, D.

E. Liarokapis, D. Papadimitriou, J. Rumberg, W. Richter, “Raman and RAS measurements on uniaxially strained thin semiconductor layers,” Phys. Status Solidi 211(1), 309–316 (1999).
[CrossRef]

Richter, W.

E. Liarokapis, D. Papadimitriou, J. Rumberg, W. Richter, “Raman and RAS measurements on uniaxially strained thin semiconductor layers,” Phys. Status Solidi 211(1), 309–316 (1999).
[CrossRef]

Rumberg, J.

E. Liarokapis, D. Papadimitriou, J. Rumberg, W. Richter, “Raman and RAS measurements on uniaxially strained thin semiconductor layers,” Phys. Status Solidi 211(1), 309–316 (1999).
[CrossRef]

Senuma, M.

H. Kawanishi, M. Senuma, M. Yamamoto, E. Niikura, T. Nukui, “Extremely weak surface emission from (0001) c-plane AlGaN multiple quantum well structure in deep-ultraviolet spectral region,” Appl. Phys. Lett. 89(8), 081121 (2006).
[CrossRef]

Sharma, T.

T. Sharma, D. Naveh, E. Towe, “Strain-driven light-polarization switching in deep ultraviolet nitride emitters,” Phys. Rev. B 84(3), 035305 (2011).
[CrossRef]

Shiraishi, K.

K. Kamiya, Y. Ebihara, K. Shiraishi, M. Kasu, “Structural design of AlN/GaN superlattices for deep-ultraviolet light-emitting diodes with high emission efficiency,” Appl. Phys. Lett. 99(15), 151108 (2011).
[CrossRef]

Suzuki, M.

M. Suzuki, T. Uenoyama, A. Yanase, “First-principles calculations of effective-mass parameters of AlN and GaN,” Phys. Rev. B Condens. Matter 52(11), 8132–8139 (1995).
[CrossRef] [PubMed]

Taniyasu, Y.

Y. Taniyasu, M. Kasu, “Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices,” Appl. Phys. Lett. 99(25), 251112 (2011).
[CrossRef]

Y. Taniyasu, M. Kasu, T. Makimoto, “Radiation and polarization properties of free-exciton emission from AlN (0001) surface,” Appl. Phys. Lett. 90(26), 261911 (2007).
[CrossRef]

Y. Taniyasu, M. Kasu, T. Makimoto, “An aluminium nitride light-emitting diode with a wavelength of 210 nanometres,” Nature 441(7091), 325–328 (2006).
[CrossRef] [PubMed]

Towe, E.

T. Sharma, D. Naveh, E. Towe, “Strain-driven light-polarization switching in deep ultraviolet nitride emitters,” Phys. Rev. B 84(3), 035305 (2011).
[CrossRef]

Uenoyama, T.

M. Suzuki, T. Uenoyama, A. Yanase, “First-principles calculations of effective-mass parameters of AlN and GaN,” Phys. Rev. B Condens. Matter 52(11), 8132–8139 (1995).
[CrossRef] [PubMed]

Vurgaftman, I.

I. Vurgaftman, J. Meyer, “Band parameters for nitrogen-containing semiconductors,” J. Appl. Phys. 94(6), 3675–3696 (2003).
[CrossRef]

Wang, B.

D. Fu, R. Zhang, B. Wang, B. Liu, Z. Xie, X. Xiu, H. Lu, Y. Zheng, G. Edwards, “Biaxial and uniaxial strain effects on the ultraviolet emission efficiencies of AlxGa1- xN films with different Al concentrations,” J. Appl. Phys. 108(10), 103107 (2010).
[CrossRef]

D. Fu, R. Zhang, B. Wang, Z. Zhang, B. Liu, Z. Xie, X. Xiu, H. Lu, Y. Zheng, G. Edwards, “Strain-modulated valence band engineering for enhancement of surface emission in polar and nonpolar plane AlN films,” Appl. Phys. Lett. 94(19), 191907 (2009).
[CrossRef]

Wei, S. H.

S. H. Wei, A. Zunger, “Valence band splittings and band offsets of AlN, GaN, and InN,” Appl. Phys. Lett. 69(18), 2719–2721 (1996).
[CrossRef]

Wei, S.-H.

J. Li, K. Nam, M. Nakarmi, J. Lin, H. Jiang, P. Carrier, S.-H. Wei, “Band structure and fundamental optical transitions in wurtzite AlN,” Appl. Phys. Lett. 83(25), 5163–5165 (2003).
[CrossRef]

Xie, Z.

D. Fu, R. Zhang, B. Wang, B. Liu, Z. Xie, X. Xiu, H. Lu, Y. Zheng, G. Edwards, “Biaxial and uniaxial strain effects on the ultraviolet emission efficiencies of AlxGa1- xN films with different Al concentrations,” J. Appl. Phys. 108(10), 103107 (2010).
[CrossRef]

D. Fu, R. Zhang, B. Wang, Z. Zhang, B. Liu, Z. Xie, X. Xiu, H. Lu, Y. Zheng, G. Edwards, “Strain-modulated valence band engineering for enhancement of surface emission in polar and nonpolar plane AlN films,” Appl. Phys. Lett. 94(19), 191907 (2009).
[CrossRef]

Xiu, X.

D. Fu, R. Zhang, B. Wang, B. Liu, Z. Xie, X. Xiu, H. Lu, Y. Zheng, G. Edwards, “Biaxial and uniaxial strain effects on the ultraviolet emission efficiencies of AlxGa1- xN films with different Al concentrations,” J. Appl. Phys. 108(10), 103107 (2010).
[CrossRef]

D. Fu, R. Zhang, B. Wang, Z. Zhang, B. Liu, Z. Xie, X. Xiu, H. Lu, Y. Zheng, G. Edwards, “Strain-modulated valence band engineering for enhancement of surface emission in polar and nonpolar plane AlN films,” Appl. Phys. Lett. 94(19), 191907 (2009).
[CrossRef]

Yamamoto, M.

H. Kawanishi, M. Senuma, M. Yamamoto, E. Niikura, T. Nukui, “Extremely weak surface emission from (0001) c-plane AlGaN multiple quantum well structure in deep-ultraviolet spectral region,” Appl. Phys. Lett. 89(8), 081121 (2006).
[CrossRef]

Yanase, A.

M. Suzuki, T. Uenoyama, A. Yanase, “First-principles calculations of effective-mass parameters of AlN and GaN,” Phys. Rev. B Condens. Matter 52(11), 8132–8139 (1995).
[CrossRef] [PubMed]

Zhang, R.

D. Fu, R. Zhang, B. Wang, B. Liu, Z. Xie, X. Xiu, H. Lu, Y. Zheng, G. Edwards, “Biaxial and uniaxial strain effects on the ultraviolet emission efficiencies of AlxGa1- xN films with different Al concentrations,” J. Appl. Phys. 108(10), 103107 (2010).
[CrossRef]

D. Fu, R. Zhang, B. Wang, Z. Zhang, B. Liu, Z. Xie, X. Xiu, H. Lu, Y. Zheng, G. Edwards, “Strain-modulated valence band engineering for enhancement of surface emission in polar and nonpolar plane AlN films,” Appl. Phys. Lett. 94(19), 191907 (2009).
[CrossRef]

Zhang, Z.

D. Fu, R. Zhang, B. Wang, Z. Zhang, B. Liu, Z. Xie, X. Xiu, H. Lu, Y. Zheng, G. Edwards, “Strain-modulated valence band engineering for enhancement of surface emission in polar and nonpolar plane AlN films,” Appl. Phys. Lett. 94(19), 191907 (2009).
[CrossRef]

Zheng, Y.

D. Fu, R. Zhang, B. Wang, B. Liu, Z. Xie, X. Xiu, H. Lu, Y. Zheng, G. Edwards, “Biaxial and uniaxial strain effects on the ultraviolet emission efficiencies of AlxGa1- xN films with different Al concentrations,” J. Appl. Phys. 108(10), 103107 (2010).
[CrossRef]

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Figures (5)

Fig. 1
Fig. 1

Schematic diagram of the experimental setup for polarized PL measurement.

Fig. 2
Fig. 2

(a) HR-XRD ω-2θ diffraction pattern and (b) (105)-plane RSM of GaN/Al0.26Ga0.74N superlattice. The XRD results imply the good integrity and periodicity of the SLs, and the sample is fully strained.

Fig. 3
Fig. 3

PL spectra of GaN/Al0.26Ga0.74N SLs and GaN. The Al0.26Ga0.74N/GaN SLs and GaN exhibit light emission at a wavelength of 347 nm and 365 nm, respectively. The inset shows the integrated intensity distribution of edge emission from SLs and GaN against prism angle, indicating that the edge emission light of SLs is dominant TE-polarized similar to that of GaN.

Fig. 4
Fig. 4

(a) The DOP of SLs and GaN under unixial strain. (b) Schematic diagram for the samples on the unixial strain device, which makes it possible to bend the wafer to achieve both tensile and compressive strain. The DOP of light emission from SLs is more sensitive to the strain than that of bulk GaN.

Fig. 5
Fig. 5

Schematic diagrams for DOP of AlxGa1-xN (0≤x≤1), and GaN/AlxGa1-xN (0<x≤1) SLs dependent on emission wavelength. The effects of strain and quantum confinement (QC) on the DOP of AlN/AlxGa1-xN QWs in region (1) and GaN/AlxGa1-xN (0<x≤1) SLs in region (2) are illuminated by the arrows.

Equations (2)

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ε xx = 6h J 0 L 2 ,
P(SLs)=( 0.70±0.01 )+( 46.39±2.90 ) ε xx . P(GaN)=( 0.77±0.01 )+( 8.77±13.90 ) ε xx

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