Abstract

A four-wavelength silicon hybrid laser array operating at room temperature is realized by evanescently coupling the optical gain of InGaAsP multi-quantum wells to the silicon waveguides of varying widths and patterned with distributed feedback gratings based on selective-area metal bonding technology. The lasers have emission peaks between 1539.9 and 1546.1 nm with a wavelength spacing of about 2.0 nm. The single laser has a typical threshold current of 50 mA and side-mode suppression ratio of 20 dB. The silicon waveguides are fabricated simply by standard photolithography and holographic lithography which are CMOS compatible.

© 2014 Optical Society of America

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  1. D. Liang, J. E. Bowers, “Recent progress in lasers on silicon,” Nat. Photonics 4(8), 511–517 (2010).
    [CrossRef]
  2. T. Wang, H. Liu, A. Lee, F. Pozzi, A. Seeds, “1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates,” Opt. Express 19(12), 11381–11386 (2011).
    [CrossRef] [PubMed]
  3. K. Tanabe, K. Watanabe, Y. Arakawa, “III-V/Si hybrid photonic devices by direct fusion bonding,” Sci Rep 2, 349 (2012).
    [CrossRef] [PubMed]
  4. R. Chen, T. Truong, K. W. Ng, W. S. Ko, L. C. Chuang, F. G. Sedgwick, C. C. Hasnain, “Nanolasers grown on silicon,” Nat. Photonics 5(3), 170–175 (2011).
    [CrossRef]
  5. A. W. Fang, H. Park, O. Cohen, R. Jones, M. J. Paniccia, J. E. Bowers, “Electrically pumped hybrid AlGaInAs-silicon evanescent laser,” Opt. Express 14(20), 9203–9210 (2006).
    [CrossRef] [PubMed]
  6. H. H. Chang, A. W. Fang, M. N. Sysak, H. Park, R. Jones, O. Cohen, O. Raday, M. J. Paniccia, J. E. Bowers, “1310nm silicon evanescent laser,” Opt. Express 15(18), 11466–11471 (2007).
    [CrossRef] [PubMed]
  7. A. W. Fang, R. Jones, H. Park, O. Cohen, O. Raday, M. J. Paniccia, J. E. Bowers, “Integrated AlGaInAs-silicon evanescent race track laser and photodetector,” Opt. Express 15(5), 2315–2322 (2007).
    [CrossRef] [PubMed]
  8. S. Stankovic, R. Jones, M. N. Sysak, J. M. Heck, G. Roelkens, D. V. Thourhout, “1310-nm Hybrid III-V/Si Fabry-Perot Laser Based on Adhesive Bonding,” IEEE Photon. Technol. Lett. 23(23), 1781–1783 (2011).
    [CrossRef]
  9. S. Stankovic, R. Jones, M. N. Sysak, J. M. Heck, G. Roelkens, D. V. Thourhout, “Hybrid III-V/Si Distributed-Feedback Laser Based on Adhesive Bonding,” IEEE Photon. Technol. Lett. 24(23), 2155–2158 (2012).
    [CrossRef]
  10. T. Hong, G. Z. Ran, T. Chen, J. Q. Pan, W. X. Chen, Y. Wang, Y. B. Cheng, S. Liang, L. J. Zhao, L. Q. Yin, J. H. Zhang, W. Wang, G. G. Qin, “A selective-Area Metal Bonding InGaAsP-Si Laser,” IEEE Photon. Technol. Lett. 22(15), 1141–1143 (2010).
    [CrossRef]
  11. T. Hong, Y. P. Li, W. X. Chen, G. Z. Ran, G. G. Qin, H. L. Zhu, S. Liang, Y. Wang, J. J. Pan, W. Wang, “Bonding InGaAsP/ITO/Si hybrid laser with ito as cathode and light-coupling material,” IEEE Photon. Technol. Lett. 24(8), 712–714 (2012).
    [CrossRef]
  12. L. J. Yuan, L. Tao, H. Y. Yu, W. X. Chen, D. Lu, Y. P. Li, G. Z. Ran, J. Q. Pan, “Hybrid InGaAsP-Si evanescent laser by selective-area metal-bonding method,” IEEE Photon. Technol. Lett. 25(12), 1180–1183 (2013).
    [CrossRef]
  13. O. Bondarenko, Q. Gu, J. Shane, A. Simic, B. Slutsky, Y. Fainman, “Wafer bonded distributed feedback laser with sidewall modulated Bragg gratings,” Appl. Phys. Lett. 103(4), 043105 (2013).
    [CrossRef]
  14. A. W. Fang, E. Lively, Y. H. Kuo, D. Liang, J. E. Bowers, “A distributed feedback silicon evanescent laser,” Opt. Express 16(7), 4413–4419 (2008).
    [CrossRef] [PubMed]
  15. A. W. Fang, B. R. Koch, R. Jones, E. Lively, D. Liang, Y. H. Kuo, J. E. Bowers, “A Distributed Bragg Reflector Silicon Evanescent Laser,” IEEE Photon. Technol. Lett. 20(20), 1667–1669 (2008).
    [CrossRef]
  16. S. Keyvaninia, G. Roelkens, D. Van Thourhout, C. Jany, M. Lamponi, A. Le Liepvre, F. Lelarge, D. Make, G. H. Duan, D. Bordel, J. M. Fedeli, “Demonstration of a heterogeneously integrated III-V/SOI single wavelength tunable laser,” Opt. Express 21(3), 3784–3792 (2013).
    [CrossRef] [PubMed]
  17. Y. Zhang, H. Qu, H. Wang, S. Zhang, L. Liu, S. Ma, W. Zheng, “A hybrid silicon single mode laser with a slotted feedback structure,” Opt. Express 21(1), 877–883 (2013).
    [CrossRef] [PubMed]
  18. Y. de Koninck, F. Raineri, A. Bazin, R. Raj, G. Roelkens, R. Baets, “Experimental demonstration of a hybrid III-V-on-silicon microlaser based on resonant grating cavity mirrors,” Opt. Lett. 38(14), 2496–2498 (2013).
    [CrossRef] [PubMed]
  19. Y. Nakano, K. Tada, “Analysis, design, and fabrication of GaAlAs/GaAs DFB lasers with modulated stripe width structure for complete single longitudinal mode oscillation,” IEEE J. Quantum Electron. 24(10), 2017–2033 (1988).
    [CrossRef]

2013 (5)

2012 (3)

T. Hong, Y. P. Li, W. X. Chen, G. Z. Ran, G. G. Qin, H. L. Zhu, S. Liang, Y. Wang, J. J. Pan, W. Wang, “Bonding InGaAsP/ITO/Si hybrid laser with ito as cathode and light-coupling material,” IEEE Photon. Technol. Lett. 24(8), 712–714 (2012).
[CrossRef]

K. Tanabe, K. Watanabe, Y. Arakawa, “III-V/Si hybrid photonic devices by direct fusion bonding,” Sci Rep 2, 349 (2012).
[CrossRef] [PubMed]

S. Stankovic, R. Jones, M. N. Sysak, J. M. Heck, G. Roelkens, D. V. Thourhout, “Hybrid III-V/Si Distributed-Feedback Laser Based on Adhesive Bonding,” IEEE Photon. Technol. Lett. 24(23), 2155–2158 (2012).
[CrossRef]

2011 (3)

R. Chen, T. Truong, K. W. Ng, W. S. Ko, L. C. Chuang, F. G. Sedgwick, C. C. Hasnain, “Nanolasers grown on silicon,” Nat. Photonics 5(3), 170–175 (2011).
[CrossRef]

S. Stankovic, R. Jones, M. N. Sysak, J. M. Heck, G. Roelkens, D. V. Thourhout, “1310-nm Hybrid III-V/Si Fabry-Perot Laser Based on Adhesive Bonding,” IEEE Photon. Technol. Lett. 23(23), 1781–1783 (2011).
[CrossRef]

T. Wang, H. Liu, A. Lee, F. Pozzi, A. Seeds, “1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates,” Opt. Express 19(12), 11381–11386 (2011).
[CrossRef] [PubMed]

2010 (2)

T. Hong, G. Z. Ran, T. Chen, J. Q. Pan, W. X. Chen, Y. Wang, Y. B. Cheng, S. Liang, L. J. Zhao, L. Q. Yin, J. H. Zhang, W. Wang, G. G. Qin, “A selective-Area Metal Bonding InGaAsP-Si Laser,” IEEE Photon. Technol. Lett. 22(15), 1141–1143 (2010).
[CrossRef]

D. Liang, J. E. Bowers, “Recent progress in lasers on silicon,” Nat. Photonics 4(8), 511–517 (2010).
[CrossRef]

2008 (2)

A. W. Fang, B. R. Koch, R. Jones, E. Lively, D. Liang, Y. H. Kuo, J. E. Bowers, “A Distributed Bragg Reflector Silicon Evanescent Laser,” IEEE Photon. Technol. Lett. 20(20), 1667–1669 (2008).
[CrossRef]

A. W. Fang, E. Lively, Y. H. Kuo, D. Liang, J. E. Bowers, “A distributed feedback silicon evanescent laser,” Opt. Express 16(7), 4413–4419 (2008).
[CrossRef] [PubMed]

2007 (2)

2006 (1)

1988 (1)

Y. Nakano, K. Tada, “Analysis, design, and fabrication of GaAlAs/GaAs DFB lasers with modulated stripe width structure for complete single longitudinal mode oscillation,” IEEE J. Quantum Electron. 24(10), 2017–2033 (1988).
[CrossRef]

Arakawa, Y.

K. Tanabe, K. Watanabe, Y. Arakawa, “III-V/Si hybrid photonic devices by direct fusion bonding,” Sci Rep 2, 349 (2012).
[CrossRef] [PubMed]

Baets, R.

Bazin, A.

Bondarenko, O.

O. Bondarenko, Q. Gu, J. Shane, A. Simic, B. Slutsky, Y. Fainman, “Wafer bonded distributed feedback laser with sidewall modulated Bragg gratings,” Appl. Phys. Lett. 103(4), 043105 (2013).
[CrossRef]

Bordel, D.

Bowers, J. E.

Chang, H. H.

Chen, R.

R. Chen, T. Truong, K. W. Ng, W. S. Ko, L. C. Chuang, F. G. Sedgwick, C. C. Hasnain, “Nanolasers grown on silicon,” Nat. Photonics 5(3), 170–175 (2011).
[CrossRef]

Chen, T.

T. Hong, G. Z. Ran, T. Chen, J. Q. Pan, W. X. Chen, Y. Wang, Y. B. Cheng, S. Liang, L. J. Zhao, L. Q. Yin, J. H. Zhang, W. Wang, G. G. Qin, “A selective-Area Metal Bonding InGaAsP-Si Laser,” IEEE Photon. Technol. Lett. 22(15), 1141–1143 (2010).
[CrossRef]

Chen, W. X.

L. J. Yuan, L. Tao, H. Y. Yu, W. X. Chen, D. Lu, Y. P. Li, G. Z. Ran, J. Q. Pan, “Hybrid InGaAsP-Si evanescent laser by selective-area metal-bonding method,” IEEE Photon. Technol. Lett. 25(12), 1180–1183 (2013).
[CrossRef]

T. Hong, Y. P. Li, W. X. Chen, G. Z. Ran, G. G. Qin, H. L. Zhu, S. Liang, Y. Wang, J. J. Pan, W. Wang, “Bonding InGaAsP/ITO/Si hybrid laser with ito as cathode and light-coupling material,” IEEE Photon. Technol. Lett. 24(8), 712–714 (2012).
[CrossRef]

T. Hong, G. Z. Ran, T. Chen, J. Q. Pan, W. X. Chen, Y. Wang, Y. B. Cheng, S. Liang, L. J. Zhao, L. Q. Yin, J. H. Zhang, W. Wang, G. G. Qin, “A selective-Area Metal Bonding InGaAsP-Si Laser,” IEEE Photon. Technol. Lett. 22(15), 1141–1143 (2010).
[CrossRef]

Cheng, Y. B.

T. Hong, G. Z. Ran, T. Chen, J. Q. Pan, W. X. Chen, Y. Wang, Y. B. Cheng, S. Liang, L. J. Zhao, L. Q. Yin, J. H. Zhang, W. Wang, G. G. Qin, “A selective-Area Metal Bonding InGaAsP-Si Laser,” IEEE Photon. Technol. Lett. 22(15), 1141–1143 (2010).
[CrossRef]

Chuang, L. C.

R. Chen, T. Truong, K. W. Ng, W. S. Ko, L. C. Chuang, F. G. Sedgwick, C. C. Hasnain, “Nanolasers grown on silicon,” Nat. Photonics 5(3), 170–175 (2011).
[CrossRef]

Cohen, O.

de Koninck, Y.

Duan, G. H.

Fainman, Y.

O. Bondarenko, Q. Gu, J. Shane, A. Simic, B. Slutsky, Y. Fainman, “Wafer bonded distributed feedback laser with sidewall modulated Bragg gratings,” Appl. Phys. Lett. 103(4), 043105 (2013).
[CrossRef]

Fang, A. W.

Fedeli, J. M.

Gu, Q.

O. Bondarenko, Q. Gu, J. Shane, A. Simic, B. Slutsky, Y. Fainman, “Wafer bonded distributed feedback laser with sidewall modulated Bragg gratings,” Appl. Phys. Lett. 103(4), 043105 (2013).
[CrossRef]

Hasnain, C. C.

R. Chen, T. Truong, K. W. Ng, W. S. Ko, L. C. Chuang, F. G. Sedgwick, C. C. Hasnain, “Nanolasers grown on silicon,” Nat. Photonics 5(3), 170–175 (2011).
[CrossRef]

Heck, J. M.

S. Stankovic, R. Jones, M. N. Sysak, J. M. Heck, G. Roelkens, D. V. Thourhout, “Hybrid III-V/Si Distributed-Feedback Laser Based on Adhesive Bonding,” IEEE Photon. Technol. Lett. 24(23), 2155–2158 (2012).
[CrossRef]

S. Stankovic, R. Jones, M. N. Sysak, J. M. Heck, G. Roelkens, D. V. Thourhout, “1310-nm Hybrid III-V/Si Fabry-Perot Laser Based on Adhesive Bonding,” IEEE Photon. Technol. Lett. 23(23), 1781–1783 (2011).
[CrossRef]

Hong, T.

T. Hong, Y. P. Li, W. X. Chen, G. Z. Ran, G. G. Qin, H. L. Zhu, S. Liang, Y. Wang, J. J. Pan, W. Wang, “Bonding InGaAsP/ITO/Si hybrid laser with ito as cathode and light-coupling material,” IEEE Photon. Technol. Lett. 24(8), 712–714 (2012).
[CrossRef]

T. Hong, G. Z. Ran, T. Chen, J. Q. Pan, W. X. Chen, Y. Wang, Y. B. Cheng, S. Liang, L. J. Zhao, L. Q. Yin, J. H. Zhang, W. Wang, G. G. Qin, “A selective-Area Metal Bonding InGaAsP-Si Laser,” IEEE Photon. Technol. Lett. 22(15), 1141–1143 (2010).
[CrossRef]

Jany, C.

Jones, R.

S. Stankovic, R. Jones, M. N. Sysak, J. M. Heck, G. Roelkens, D. V. Thourhout, “Hybrid III-V/Si Distributed-Feedback Laser Based on Adhesive Bonding,” IEEE Photon. Technol. Lett. 24(23), 2155–2158 (2012).
[CrossRef]

S. Stankovic, R. Jones, M. N. Sysak, J. M. Heck, G. Roelkens, D. V. Thourhout, “1310-nm Hybrid III-V/Si Fabry-Perot Laser Based on Adhesive Bonding,” IEEE Photon. Technol. Lett. 23(23), 1781–1783 (2011).
[CrossRef]

A. W. Fang, B. R. Koch, R. Jones, E. Lively, D. Liang, Y. H. Kuo, J. E. Bowers, “A Distributed Bragg Reflector Silicon Evanescent Laser,” IEEE Photon. Technol. Lett. 20(20), 1667–1669 (2008).
[CrossRef]

A. W. Fang, R. Jones, H. Park, O. Cohen, O. Raday, M. J. Paniccia, J. E. Bowers, “Integrated AlGaInAs-silicon evanescent race track laser and photodetector,” Opt. Express 15(5), 2315–2322 (2007).
[CrossRef] [PubMed]

H. H. Chang, A. W. Fang, M. N. Sysak, H. Park, R. Jones, O. Cohen, O. Raday, M. J. Paniccia, J. E. Bowers, “1310nm silicon evanescent laser,” Opt. Express 15(18), 11466–11471 (2007).
[CrossRef] [PubMed]

A. W. Fang, H. Park, O. Cohen, R. Jones, M. J. Paniccia, J. E. Bowers, “Electrically pumped hybrid AlGaInAs-silicon evanescent laser,” Opt. Express 14(20), 9203–9210 (2006).
[CrossRef] [PubMed]

Keyvaninia, S.

Ko, W. S.

R. Chen, T. Truong, K. W. Ng, W. S. Ko, L. C. Chuang, F. G. Sedgwick, C. C. Hasnain, “Nanolasers grown on silicon,” Nat. Photonics 5(3), 170–175 (2011).
[CrossRef]

Koch, B. R.

A. W. Fang, B. R. Koch, R. Jones, E. Lively, D. Liang, Y. H. Kuo, J. E. Bowers, “A Distributed Bragg Reflector Silicon Evanescent Laser,” IEEE Photon. Technol. Lett. 20(20), 1667–1669 (2008).
[CrossRef]

Kuo, Y. H.

A. W. Fang, B. R. Koch, R. Jones, E. Lively, D. Liang, Y. H. Kuo, J. E. Bowers, “A Distributed Bragg Reflector Silicon Evanescent Laser,” IEEE Photon. Technol. Lett. 20(20), 1667–1669 (2008).
[CrossRef]

A. W. Fang, E. Lively, Y. H. Kuo, D. Liang, J. E. Bowers, “A distributed feedback silicon evanescent laser,” Opt. Express 16(7), 4413–4419 (2008).
[CrossRef] [PubMed]

Lamponi, M.

Le Liepvre, A.

Lee, A.

Lelarge, F.

Li, Y. P.

L. J. Yuan, L. Tao, H. Y. Yu, W. X. Chen, D. Lu, Y. P. Li, G. Z. Ran, J. Q. Pan, “Hybrid InGaAsP-Si evanescent laser by selective-area metal-bonding method,” IEEE Photon. Technol. Lett. 25(12), 1180–1183 (2013).
[CrossRef]

T. Hong, Y. P. Li, W. X. Chen, G. Z. Ran, G. G. Qin, H. L. Zhu, S. Liang, Y. Wang, J. J. Pan, W. Wang, “Bonding InGaAsP/ITO/Si hybrid laser with ito as cathode and light-coupling material,” IEEE Photon. Technol. Lett. 24(8), 712–714 (2012).
[CrossRef]

Liang, D.

D. Liang, J. E. Bowers, “Recent progress in lasers on silicon,” Nat. Photonics 4(8), 511–517 (2010).
[CrossRef]

A. W. Fang, B. R. Koch, R. Jones, E. Lively, D. Liang, Y. H. Kuo, J. E. Bowers, “A Distributed Bragg Reflector Silicon Evanescent Laser,” IEEE Photon. Technol. Lett. 20(20), 1667–1669 (2008).
[CrossRef]

A. W. Fang, E. Lively, Y. H. Kuo, D. Liang, J. E. Bowers, “A distributed feedback silicon evanescent laser,” Opt. Express 16(7), 4413–4419 (2008).
[CrossRef] [PubMed]

Liang, S.

T. Hong, Y. P. Li, W. X. Chen, G. Z. Ran, G. G. Qin, H. L. Zhu, S. Liang, Y. Wang, J. J. Pan, W. Wang, “Bonding InGaAsP/ITO/Si hybrid laser with ito as cathode and light-coupling material,” IEEE Photon. Technol. Lett. 24(8), 712–714 (2012).
[CrossRef]

T. Hong, G. Z. Ran, T. Chen, J. Q. Pan, W. X. Chen, Y. Wang, Y. B. Cheng, S. Liang, L. J. Zhao, L. Q. Yin, J. H. Zhang, W. Wang, G. G. Qin, “A selective-Area Metal Bonding InGaAsP-Si Laser,” IEEE Photon. Technol. Lett. 22(15), 1141–1143 (2010).
[CrossRef]

Liu, H.

Liu, L.

Lively, E.

A. W. Fang, E. Lively, Y. H. Kuo, D. Liang, J. E. Bowers, “A distributed feedback silicon evanescent laser,” Opt. Express 16(7), 4413–4419 (2008).
[CrossRef] [PubMed]

A. W. Fang, B. R. Koch, R. Jones, E. Lively, D. Liang, Y. H. Kuo, J. E. Bowers, “A Distributed Bragg Reflector Silicon Evanescent Laser,” IEEE Photon. Technol. Lett. 20(20), 1667–1669 (2008).
[CrossRef]

Lu, D.

L. J. Yuan, L. Tao, H. Y. Yu, W. X. Chen, D. Lu, Y. P. Li, G. Z. Ran, J. Q. Pan, “Hybrid InGaAsP-Si evanescent laser by selective-area metal-bonding method,” IEEE Photon. Technol. Lett. 25(12), 1180–1183 (2013).
[CrossRef]

Ma, S.

Make, D.

Nakano, Y.

Y. Nakano, K. Tada, “Analysis, design, and fabrication of GaAlAs/GaAs DFB lasers with modulated stripe width structure for complete single longitudinal mode oscillation,” IEEE J. Quantum Electron. 24(10), 2017–2033 (1988).
[CrossRef]

Ng, K. W.

R. Chen, T. Truong, K. W. Ng, W. S. Ko, L. C. Chuang, F. G. Sedgwick, C. C. Hasnain, “Nanolasers grown on silicon,” Nat. Photonics 5(3), 170–175 (2011).
[CrossRef]

Pan, J. J.

T. Hong, Y. P. Li, W. X. Chen, G. Z. Ran, G. G. Qin, H. L. Zhu, S. Liang, Y. Wang, J. J. Pan, W. Wang, “Bonding InGaAsP/ITO/Si hybrid laser with ito as cathode and light-coupling material,” IEEE Photon. Technol. Lett. 24(8), 712–714 (2012).
[CrossRef]

Pan, J. Q.

L. J. Yuan, L. Tao, H. Y. Yu, W. X. Chen, D. Lu, Y. P. Li, G. Z. Ran, J. Q. Pan, “Hybrid InGaAsP-Si evanescent laser by selective-area metal-bonding method,” IEEE Photon. Technol. Lett. 25(12), 1180–1183 (2013).
[CrossRef]

T. Hong, G. Z. Ran, T. Chen, J. Q. Pan, W. X. Chen, Y. Wang, Y. B. Cheng, S. Liang, L. J. Zhao, L. Q. Yin, J. H. Zhang, W. Wang, G. G. Qin, “A selective-Area Metal Bonding InGaAsP-Si Laser,” IEEE Photon. Technol. Lett. 22(15), 1141–1143 (2010).
[CrossRef]

Paniccia, M. J.

Park, H.

Pozzi, F.

Qin, G. G.

T. Hong, Y. P. Li, W. X. Chen, G. Z. Ran, G. G. Qin, H. L. Zhu, S. Liang, Y. Wang, J. J. Pan, W. Wang, “Bonding InGaAsP/ITO/Si hybrid laser with ito as cathode and light-coupling material,” IEEE Photon. Technol. Lett. 24(8), 712–714 (2012).
[CrossRef]

T. Hong, G. Z. Ran, T. Chen, J. Q. Pan, W. X. Chen, Y. Wang, Y. B. Cheng, S. Liang, L. J. Zhao, L. Q. Yin, J. H. Zhang, W. Wang, G. G. Qin, “A selective-Area Metal Bonding InGaAsP-Si Laser,” IEEE Photon. Technol. Lett. 22(15), 1141–1143 (2010).
[CrossRef]

Qu, H.

Raday, O.

Raineri, F.

Raj, R.

Ran, G. Z.

L. J. Yuan, L. Tao, H. Y. Yu, W. X. Chen, D. Lu, Y. P. Li, G. Z. Ran, J. Q. Pan, “Hybrid InGaAsP-Si evanescent laser by selective-area metal-bonding method,” IEEE Photon. Technol. Lett. 25(12), 1180–1183 (2013).
[CrossRef]

T. Hong, Y. P. Li, W. X. Chen, G. Z. Ran, G. G. Qin, H. L. Zhu, S. Liang, Y. Wang, J. J. Pan, W. Wang, “Bonding InGaAsP/ITO/Si hybrid laser with ito as cathode and light-coupling material,” IEEE Photon. Technol. Lett. 24(8), 712–714 (2012).
[CrossRef]

T. Hong, G. Z. Ran, T. Chen, J. Q. Pan, W. X. Chen, Y. Wang, Y. B. Cheng, S. Liang, L. J. Zhao, L. Q. Yin, J. H. Zhang, W. Wang, G. G. Qin, “A selective-Area Metal Bonding InGaAsP-Si Laser,” IEEE Photon. Technol. Lett. 22(15), 1141–1143 (2010).
[CrossRef]

Roelkens, G.

S. Keyvaninia, G. Roelkens, D. Van Thourhout, C. Jany, M. Lamponi, A. Le Liepvre, F. Lelarge, D. Make, G. H. Duan, D. Bordel, J. M. Fedeli, “Demonstration of a heterogeneously integrated III-V/SOI single wavelength tunable laser,” Opt. Express 21(3), 3784–3792 (2013).
[CrossRef] [PubMed]

Y. de Koninck, F. Raineri, A. Bazin, R. Raj, G. Roelkens, R. Baets, “Experimental demonstration of a hybrid III-V-on-silicon microlaser based on resonant grating cavity mirrors,” Opt. Lett. 38(14), 2496–2498 (2013).
[CrossRef] [PubMed]

S. Stankovic, R. Jones, M. N. Sysak, J. M. Heck, G. Roelkens, D. V. Thourhout, “Hybrid III-V/Si Distributed-Feedback Laser Based on Adhesive Bonding,” IEEE Photon. Technol. Lett. 24(23), 2155–2158 (2012).
[CrossRef]

S. Stankovic, R. Jones, M. N. Sysak, J. M. Heck, G. Roelkens, D. V. Thourhout, “1310-nm Hybrid III-V/Si Fabry-Perot Laser Based on Adhesive Bonding,” IEEE Photon. Technol. Lett. 23(23), 1781–1783 (2011).
[CrossRef]

Sedgwick, F. G.

R. Chen, T. Truong, K. W. Ng, W. S. Ko, L. C. Chuang, F. G. Sedgwick, C. C. Hasnain, “Nanolasers grown on silicon,” Nat. Photonics 5(3), 170–175 (2011).
[CrossRef]

Seeds, A.

Shane, J.

O. Bondarenko, Q. Gu, J. Shane, A. Simic, B. Slutsky, Y. Fainman, “Wafer bonded distributed feedback laser with sidewall modulated Bragg gratings,” Appl. Phys. Lett. 103(4), 043105 (2013).
[CrossRef]

Simic, A.

O. Bondarenko, Q. Gu, J. Shane, A. Simic, B. Slutsky, Y. Fainman, “Wafer bonded distributed feedback laser with sidewall modulated Bragg gratings,” Appl. Phys. Lett. 103(4), 043105 (2013).
[CrossRef]

Slutsky, B.

O. Bondarenko, Q. Gu, J. Shane, A. Simic, B. Slutsky, Y. Fainman, “Wafer bonded distributed feedback laser with sidewall modulated Bragg gratings,” Appl. Phys. Lett. 103(4), 043105 (2013).
[CrossRef]

Stankovic, S.

S. Stankovic, R. Jones, M. N. Sysak, J. M. Heck, G. Roelkens, D. V. Thourhout, “Hybrid III-V/Si Distributed-Feedback Laser Based on Adhesive Bonding,” IEEE Photon. Technol. Lett. 24(23), 2155–2158 (2012).
[CrossRef]

S. Stankovic, R. Jones, M. N. Sysak, J. M. Heck, G. Roelkens, D. V. Thourhout, “1310-nm Hybrid III-V/Si Fabry-Perot Laser Based on Adhesive Bonding,” IEEE Photon. Technol. Lett. 23(23), 1781–1783 (2011).
[CrossRef]

Sysak, M. N.

S. Stankovic, R. Jones, M. N. Sysak, J. M. Heck, G. Roelkens, D. V. Thourhout, “Hybrid III-V/Si Distributed-Feedback Laser Based on Adhesive Bonding,” IEEE Photon. Technol. Lett. 24(23), 2155–2158 (2012).
[CrossRef]

S. Stankovic, R. Jones, M. N. Sysak, J. M. Heck, G. Roelkens, D. V. Thourhout, “1310-nm Hybrid III-V/Si Fabry-Perot Laser Based on Adhesive Bonding,” IEEE Photon. Technol. Lett. 23(23), 1781–1783 (2011).
[CrossRef]

H. H. Chang, A. W. Fang, M. N. Sysak, H. Park, R. Jones, O. Cohen, O. Raday, M. J. Paniccia, J. E. Bowers, “1310nm silicon evanescent laser,” Opt. Express 15(18), 11466–11471 (2007).
[CrossRef] [PubMed]

Tada, K.

Y. Nakano, K. Tada, “Analysis, design, and fabrication of GaAlAs/GaAs DFB lasers with modulated stripe width structure for complete single longitudinal mode oscillation,” IEEE J. Quantum Electron. 24(10), 2017–2033 (1988).
[CrossRef]

Tanabe, K.

K. Tanabe, K. Watanabe, Y. Arakawa, “III-V/Si hybrid photonic devices by direct fusion bonding,” Sci Rep 2, 349 (2012).
[CrossRef] [PubMed]

Tao, L.

L. J. Yuan, L. Tao, H. Y. Yu, W. X. Chen, D. Lu, Y. P. Li, G. Z. Ran, J. Q. Pan, “Hybrid InGaAsP-Si evanescent laser by selective-area metal-bonding method,” IEEE Photon. Technol. Lett. 25(12), 1180–1183 (2013).
[CrossRef]

Thourhout, D. V.

S. Stankovic, R. Jones, M. N. Sysak, J. M. Heck, G. Roelkens, D. V. Thourhout, “Hybrid III-V/Si Distributed-Feedback Laser Based on Adhesive Bonding,” IEEE Photon. Technol. Lett. 24(23), 2155–2158 (2012).
[CrossRef]

S. Stankovic, R. Jones, M. N. Sysak, J. M. Heck, G. Roelkens, D. V. Thourhout, “1310-nm Hybrid III-V/Si Fabry-Perot Laser Based on Adhesive Bonding,” IEEE Photon. Technol. Lett. 23(23), 1781–1783 (2011).
[CrossRef]

Truong, T.

R. Chen, T. Truong, K. W. Ng, W. S. Ko, L. C. Chuang, F. G. Sedgwick, C. C. Hasnain, “Nanolasers grown on silicon,” Nat. Photonics 5(3), 170–175 (2011).
[CrossRef]

Van Thourhout, D.

Wang, H.

Wang, T.

Wang, W.

T. Hong, Y. P. Li, W. X. Chen, G. Z. Ran, G. G. Qin, H. L. Zhu, S. Liang, Y. Wang, J. J. Pan, W. Wang, “Bonding InGaAsP/ITO/Si hybrid laser with ito as cathode and light-coupling material,” IEEE Photon. Technol. Lett. 24(8), 712–714 (2012).
[CrossRef]

T. Hong, G. Z. Ran, T. Chen, J. Q. Pan, W. X. Chen, Y. Wang, Y. B. Cheng, S. Liang, L. J. Zhao, L. Q. Yin, J. H. Zhang, W. Wang, G. G. Qin, “A selective-Area Metal Bonding InGaAsP-Si Laser,” IEEE Photon. Technol. Lett. 22(15), 1141–1143 (2010).
[CrossRef]

Wang, Y.

T. Hong, Y. P. Li, W. X. Chen, G. Z. Ran, G. G. Qin, H. L. Zhu, S. Liang, Y. Wang, J. J. Pan, W. Wang, “Bonding InGaAsP/ITO/Si hybrid laser with ito as cathode and light-coupling material,” IEEE Photon. Technol. Lett. 24(8), 712–714 (2012).
[CrossRef]

T. Hong, G. Z. Ran, T. Chen, J. Q. Pan, W. X. Chen, Y. Wang, Y. B. Cheng, S. Liang, L. J. Zhao, L. Q. Yin, J. H. Zhang, W. Wang, G. G. Qin, “A selective-Area Metal Bonding InGaAsP-Si Laser,” IEEE Photon. Technol. Lett. 22(15), 1141–1143 (2010).
[CrossRef]

Watanabe, K.

K. Tanabe, K. Watanabe, Y. Arakawa, “III-V/Si hybrid photonic devices by direct fusion bonding,” Sci Rep 2, 349 (2012).
[CrossRef] [PubMed]

Yin, L. Q.

T. Hong, G. Z. Ran, T. Chen, J. Q. Pan, W. X. Chen, Y. Wang, Y. B. Cheng, S. Liang, L. J. Zhao, L. Q. Yin, J. H. Zhang, W. Wang, G. G. Qin, “A selective-Area Metal Bonding InGaAsP-Si Laser,” IEEE Photon. Technol. Lett. 22(15), 1141–1143 (2010).
[CrossRef]

Yu, H. Y.

L. J. Yuan, L. Tao, H. Y. Yu, W. X. Chen, D. Lu, Y. P. Li, G. Z. Ran, J. Q. Pan, “Hybrid InGaAsP-Si evanescent laser by selective-area metal-bonding method,” IEEE Photon. Technol. Lett. 25(12), 1180–1183 (2013).
[CrossRef]

Yuan, L. J.

L. J. Yuan, L. Tao, H. Y. Yu, W. X. Chen, D. Lu, Y. P. Li, G. Z. Ran, J. Q. Pan, “Hybrid InGaAsP-Si evanescent laser by selective-area metal-bonding method,” IEEE Photon. Technol. Lett. 25(12), 1180–1183 (2013).
[CrossRef]

Zhang, J. H.

T. Hong, G. Z. Ran, T. Chen, J. Q. Pan, W. X. Chen, Y. Wang, Y. B. Cheng, S. Liang, L. J. Zhao, L. Q. Yin, J. H. Zhang, W. Wang, G. G. Qin, “A selective-Area Metal Bonding InGaAsP-Si Laser,” IEEE Photon. Technol. Lett. 22(15), 1141–1143 (2010).
[CrossRef]

Zhang, S.

Zhang, Y.

Zhao, L. J.

T. Hong, G. Z. Ran, T. Chen, J. Q. Pan, W. X. Chen, Y. Wang, Y. B. Cheng, S. Liang, L. J. Zhao, L. Q. Yin, J. H. Zhang, W. Wang, G. G. Qin, “A selective-Area Metal Bonding InGaAsP-Si Laser,” IEEE Photon. Technol. Lett. 22(15), 1141–1143 (2010).
[CrossRef]

Zheng, W.

Zhu, H. L.

T. Hong, Y. P. Li, W. X. Chen, G. Z. Ran, G. G. Qin, H. L. Zhu, S. Liang, Y. Wang, J. J. Pan, W. Wang, “Bonding InGaAsP/ITO/Si hybrid laser with ito as cathode and light-coupling material,” IEEE Photon. Technol. Lett. 24(8), 712–714 (2012).
[CrossRef]

Appl. Phys. Lett. (1)

O. Bondarenko, Q. Gu, J. Shane, A. Simic, B. Slutsky, Y. Fainman, “Wafer bonded distributed feedback laser with sidewall modulated Bragg gratings,” Appl. Phys. Lett. 103(4), 043105 (2013).
[CrossRef]

IEEE J. Quantum Electron. (1)

Y. Nakano, K. Tada, “Analysis, design, and fabrication of GaAlAs/GaAs DFB lasers with modulated stripe width structure for complete single longitudinal mode oscillation,” IEEE J. Quantum Electron. 24(10), 2017–2033 (1988).
[CrossRef]

IEEE Photon. Technol. Lett. (6)

S. Stankovic, R. Jones, M. N. Sysak, J. M. Heck, G. Roelkens, D. V. Thourhout, “1310-nm Hybrid III-V/Si Fabry-Perot Laser Based on Adhesive Bonding,” IEEE Photon. Technol. Lett. 23(23), 1781–1783 (2011).
[CrossRef]

S. Stankovic, R. Jones, M. N. Sysak, J. M. Heck, G. Roelkens, D. V. Thourhout, “Hybrid III-V/Si Distributed-Feedback Laser Based on Adhesive Bonding,” IEEE Photon. Technol. Lett. 24(23), 2155–2158 (2012).
[CrossRef]

T. Hong, G. Z. Ran, T. Chen, J. Q. Pan, W. X. Chen, Y. Wang, Y. B. Cheng, S. Liang, L. J. Zhao, L. Q. Yin, J. H. Zhang, W. Wang, G. G. Qin, “A selective-Area Metal Bonding InGaAsP-Si Laser,” IEEE Photon. Technol. Lett. 22(15), 1141–1143 (2010).
[CrossRef]

T. Hong, Y. P. Li, W. X. Chen, G. Z. Ran, G. G. Qin, H. L. Zhu, S. Liang, Y. Wang, J. J. Pan, W. Wang, “Bonding InGaAsP/ITO/Si hybrid laser with ito as cathode and light-coupling material,” IEEE Photon. Technol. Lett. 24(8), 712–714 (2012).
[CrossRef]

L. J. Yuan, L. Tao, H. Y. Yu, W. X. Chen, D. Lu, Y. P. Li, G. Z. Ran, J. Q. Pan, “Hybrid InGaAsP-Si evanescent laser by selective-area metal-bonding method,” IEEE Photon. Technol. Lett. 25(12), 1180–1183 (2013).
[CrossRef]

A. W. Fang, B. R. Koch, R. Jones, E. Lively, D. Liang, Y. H. Kuo, J. E. Bowers, “A Distributed Bragg Reflector Silicon Evanescent Laser,” IEEE Photon. Technol. Lett. 20(20), 1667–1669 (2008).
[CrossRef]

Nat. Photonics (2)

D. Liang, J. E. Bowers, “Recent progress in lasers on silicon,” Nat. Photonics 4(8), 511–517 (2010).
[CrossRef]

R. Chen, T. Truong, K. W. Ng, W. S. Ko, L. C. Chuang, F. G. Sedgwick, C. C. Hasnain, “Nanolasers grown on silicon,” Nat. Photonics 5(3), 170–175 (2011).
[CrossRef]

Opt. Express (7)

Opt. Lett. (1)

Sci Rep (1)

K. Tanabe, K. Watanabe, Y. Arakawa, “III-V/Si hybrid photonic devices by direct fusion bonding,” Sci Rep 2, 349 (2012).
[CrossRef] [PubMed]

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Figures (5)

Fig. 1
Fig. 1

Schematic drawing of the InGaAsP-Si hybrid laser (not to scale).

Fig. 2
Fig. 2

(a) Calculated TE fundamental mode profile. (b) Near field image of lasing mode. (c) Typical curves of voltage and light output power versus pulsed injection current of the hybrid laser at room temperature. (d) Scanning electronic microscopic image of the DFB silicon waveguide.

Fig. 3
Fig. 3

(a) The lasing spectrum with 20 dB side mode extinction ratio at 75 mA pulsed current at room temperature. (b) The lasing spectrum of III-V laser before bonding under the same test conditions.

Fig. 4
Fig. 4

Effective refractive index of hybrid waveguide versus silicon waveguide width. The four marked points are the designed parameters for the four channels with the grating period 237 nm.

Fig. 5
Fig. 5

(a) Spectra of the four lasing channels. (b) Infrared microscope image of the four lasing lasers.

Tables (1)

Tables Icon

Table 1 Structure of first epitaxial layers

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