Abstract

We report ultra large photo responsivity (ratio of photo-generated current to absorbed power) in a single nanowire (NW) device made from a single strand of a nanowire (diameter ~30nm and length ~200nm) of an organomettalic semiconducting charge transfer complex material of CuTCNQ. The device shows responsivity of 8x104 A/Watt at 1 volt applied bias with an enhancement over the dark current exceeding 105 at zero bias. The observed photo current has a spectral dependence that strongly follows the main absorption peak (close to 405 nm) showing the primary role of absorbed photo-generated carriers.

© 2014 Optical Society of America

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    [CrossRef]

2012

Y. Liu, Q. Yang, Y. Zhang, Z. Yang, Z. L. Wang, “Nanowire Piezo-Phototronic Photodetector: Theory and Experimental Design,” Adv. Mater. 24(11), 1410–1417 (2012).
[CrossRef] [PubMed]

M. W. Chen, J. R. D. Retamal, C. Y. Chen, J. H. He, “Photocarrier Relaxation Behavior of a Single ZnO Nanowire UV Photodetector: Effect of Surface Band Bending,” IEEE Electron Device Lett. 33, 411 (2012).

M. Afsal, C. Y. Wang, L. W. Chu, H. Ouyang, L. J. Chen, “Highly sensitive metal–insulator–semiconductor UV photodetectors based on ZnO/SiO2 core–shell nanowires,” J. Mater. Chem. 22(17), 8420–8425 (2012).
[CrossRef]

G. Bulgarini, M. E. Reimer, M. Hocevar, E. P. A. M. Bakkers, L. P. Kouwenhoven, V. Zwiller, “Avalanche amplification of a single exciton in a semiconductor nanowire,” Nat. Photonics 6(7), 455–458 (2012).
[CrossRef]

2011

S. C. Kung, W. Xing, W.-E. van der Veer, F. Yang, K.-C. Donavan, M. Cheng, J.-C. Hemminger, R.-M. Penner, “Tunable Photoconduction Sensitivity and Bandwidth for Lithographically Patterned Nanocrystalline Cadmium Selenide Nanowires,” ACS Nano 5(9), 7627–7639 (2011).
[CrossRef] [PubMed]

2010

H. M. Huang, R. S. Chen, H. Y. Chen, T. W. Liu, C. C. Kuo, C. P. Chen, H. C. Hsu, L. C. Chen, K. H. Chen, Y. J. Yang, “Photoconductivity in single AlN nanowires by subband gap excitation,” Appl. Phys. Lett. 96(6), 062104 (2010).
[CrossRef]

K. Huang, Q. Zhang, F. Yang, D. He, “Ultraviolet photoconductance of a single hexagonal WO3 nanowire,” Nano Res. 3, 281–287 (2010).
[CrossRef]

A. Zhang, H. Kim, J. Cheng, Y.-H. Lo, “Ultrahigh Responsivity Visible and Infrared Detection Using Silicon Nanowire Phototransistors,” Nano Lett. 10(6), 2117–2120 (2010).
[CrossRef] [PubMed]

Z. Li, C. Rochford, F. Javier Baca, J. Liu, J. Li, J. Wu, “Investigation into Photoconductivity in Single CNF/TiO2-Dye Core-Shell Nanowire Devices,” Nanoscale Res. Lett. 5(9), 1480–1486 (2010).
[CrossRef] [PubMed]

T.-Y. Wei, C.-T. Huang, B. J. Hansen, Y.-F. Lin, L.-J. Chen, S.-Y. Lu, Z. L. Wang, “Large enhancement in photon detection sensitivity via Schottky-gated CdS nanowire nanosensors,” Appl. Phys. Lett. 96(1), 013508 (2010).
[CrossRef]

2009

X. N. Xie, Y. Xie, X. Gao, C. H. Sow, A. T. S. Wee, “Metallic Nanoparticle Network for Photocurrent Generation and Photodetection,” Adv. Mater. 21(29), 3016–3021 (2009).
[CrossRef]

2008

X. Zhang, J. Jie, W. Zhang, C. Zhang, L. Luo, Z. He, X. Zhang, W. Zhang, C. Lee, S. Lee, “Photoconductivity of a Single Small-Molecule Organic Nanowire,” Adv. Mater. 20(12), 2427–2432 (2008).
[CrossRef]

R.-S. Chen, S.-W. Wang, Z.-H. Lan, J. T.-H. Tsai, C.-T. Wu, L.-C. Chen, K.-H. Chen, Y.-S. Huang, C.-C. Chen, “On-Chip Fabrication of Well-Aligned and Contact-Barrier-Free GaN Nanobridge Devices with Ultrahigh Photocurrent Responsivity,” Small 4(7), 925–929 (2008).
[CrossRef] [PubMed]

M. Rao, K. S. Narayan, “Evaluation of electrode-semiconductor barrier in transparent top-contact polymer field effect transistors,” Appl. Phys. Lett. 92(22), 223308 (2008).
[CrossRef]

2006

A. K. Okyay, C. O. Chui, K. C. Saraswat, “Leakage suppression by asymmetric area electrodes in metal-semiconductor-metal photodetectors,” Appl. Phys. Lett. 88(6), 063506 (2006).
[CrossRef]

J. S. Jie, W. J. Zhang, Y. Jiang, X. M. Meng, Y. Q. Li, S. T. Lee, “Photoconductive Characteristics of Single-Crystal CdS Nanoribbons,” Nano Lett. 6(9), 1887–1892 (2006).
[CrossRef] [PubMed]

G. A. O’Brien, A. J. Quinn, D. A. Tanner, G. Redmond, “A Single Polymer Nanowire Photodetector,” Adv. Mater. 18(18), 2379–2383 (2006).
[CrossRef]

2005

R. Calarco, M. Marso, T. Richter, A. I. Aykanat, R. Meijers, A. v.d. Hart, T. Stoica, H. Lüth, “Size-dependent Photoconductivity in MBE-Grown GaN-Nanowires,” Nano Lett. 5(5), 981–984 (2005).
[CrossRef] [PubMed]

Y. Ahn, J. Dunning, J. Park, “Scanning Photocurrent Imaging and Electronic Band Studies in Silicon Nanowire Field Effect Transistors,” Nano Lett. 5(7), 1367–1370 (2005).
[CrossRef] [PubMed]

Y. Gu, E.-S. Kwak, J. L. Lensch, J. E. Allen, T. W. Odom, L. J. Lauhon, “Near-field scanning photocurrent microscopy of a nanowire photodetector,” Appl. Phys. Lett. 87(4), 043111 (2005).
[CrossRef]

2003

T. Oyamada, H. Tanaka, K. Matsushige, H. Sasabe, C. Adachi, “Switching effect in Cu:TCNQ charge transfer-complex thin films by vacuum codeposition,” Appl. Phys. Lett. 83(6), 1252–1254 (2003).
[CrossRef]

M. Freitag, Y. Martin, J. A. Misewich, R. Martel, P. Avouris, “Photoconductivity of Single Carbon Nanotubes,” Nano Lett. 3(8), 1067–1071 (2003).
[CrossRef]

2002

H. Kind, H. Yan, B. Messer, M. Law, P. Yang, “Nanowire Ultraviolet Photodetectors and Optical Switches,” Adv. Mater. 14(2), 158–160 (2002).
[CrossRef]

2001

J. Wang, M. S. Gudiksen, X. Duan, Y. Cui, C. M. Lieber, “Highly Polarized Photoluminescence and Photodetection from Single Indium Phosphide Nanowires,” Science 293(5534), 1455–1457 (2001).
[CrossRef] [PubMed]

G. N. Gol’tsman, O. Okunev, G. Chulkova, A. Lipatov, A. Semenov, K. Smirnov, B. Voronov, A. Dzardanov, “Picosecond superconducting single-photon optical detector,” Appl. Phys. Lett. 79, 705–707 (2001).

G. N. Gol’tsman, O. Okunev, G. Chulkova, A. Lipatov, A. Semenov, K. Smirnov, B. Voronov, A. Dzardanov, C. Williams, R. Sobolewski, “Picosecond superconducting single-photon optical detector,” Appl. Phys. Lett. 79(6), 705–707 (2001).
[CrossRef]

1996

S.-G. Liu, Y.-Q. Liu, P.-J. Wu, D.-B. Zhu, “Multifaceted Study of CuTCNQ Thin-Film Materials.Fabrication, Morphology, and Spectral and Electrical Switching Properties,” Chem. Mater. 8(12), 2779–2787 (1996).
[CrossRef]

1979

R. S. Potember, T. O. Poehler, D. O. Cowan, “Electrical switching and memory phenomena in CuTCNQ thin films,” Appl. Phys. Lett. 34(6), 405–407 (1979).
[CrossRef]

1973

R. R. Mehta, B. S. Sharma, “Photoconductive gain greater than unity in CdSe films with Schottky barriers at the contacts,” J. Appl. Phys. 44(1), 325–328 (1973).

Adachi, C.

T. Oyamada, H. Tanaka, K. Matsushige, H. Sasabe, C. Adachi, “Switching effect in Cu:TCNQ charge transfer-complex thin films by vacuum codeposition,” Appl. Phys. Lett. 83(6), 1252–1254 (2003).
[CrossRef]

Afsal, M.

M. Afsal, C. Y. Wang, L. W. Chu, H. Ouyang, L. J. Chen, “Highly sensitive metal–insulator–semiconductor UV photodetectors based on ZnO/SiO2 core–shell nanowires,” J. Mater. Chem. 22(17), 8420–8425 (2012).
[CrossRef]

Ahn, Y.

Y. Ahn, J. Dunning, J. Park, “Scanning Photocurrent Imaging and Electronic Band Studies in Silicon Nanowire Field Effect Transistors,” Nano Lett. 5(7), 1367–1370 (2005).
[CrossRef] [PubMed]

Allen, J. E.

Y. Gu, E.-S. Kwak, J. L. Lensch, J. E. Allen, T. W. Odom, L. J. Lauhon, “Near-field scanning photocurrent microscopy of a nanowire photodetector,” Appl. Phys. Lett. 87(4), 043111 (2005).
[CrossRef]

Avouris, P.

M. Freitag, Y. Martin, J. A. Misewich, R. Martel, P. Avouris, “Photoconductivity of Single Carbon Nanotubes,” Nano Lett. 3(8), 1067–1071 (2003).
[CrossRef]

Aykanat, A. I.

R. Calarco, M. Marso, T. Richter, A. I. Aykanat, R. Meijers, A. v.d. Hart, T. Stoica, H. Lüth, “Size-dependent Photoconductivity in MBE-Grown GaN-Nanowires,” Nano Lett. 5(5), 981–984 (2005).
[CrossRef] [PubMed]

Bakkers, E. P. A. M.

G. Bulgarini, M. E. Reimer, M. Hocevar, E. P. A. M. Bakkers, L. P. Kouwenhoven, V. Zwiller, “Avalanche amplification of a single exciton in a semiconductor nanowire,” Nat. Photonics 6(7), 455–458 (2012).
[CrossRef]

Bulgarini, G.

G. Bulgarini, M. E. Reimer, M. Hocevar, E. P. A. M. Bakkers, L. P. Kouwenhoven, V. Zwiller, “Avalanche amplification of a single exciton in a semiconductor nanowire,” Nat. Photonics 6(7), 455–458 (2012).
[CrossRef]

Calarco, R.

R. Calarco, M. Marso, T. Richter, A. I. Aykanat, R. Meijers, A. v.d. Hart, T. Stoica, H. Lüth, “Size-dependent Photoconductivity in MBE-Grown GaN-Nanowires,” Nano Lett. 5(5), 981–984 (2005).
[CrossRef] [PubMed]

Chen, C. P.

H. M. Huang, R. S. Chen, H. Y. Chen, T. W. Liu, C. C. Kuo, C. P. Chen, H. C. Hsu, L. C. Chen, K. H. Chen, Y. J. Yang, “Photoconductivity in single AlN nanowires by subband gap excitation,” Appl. Phys. Lett. 96(6), 062104 (2010).
[CrossRef]

Chen, C. Y.

M. W. Chen, J. R. D. Retamal, C. Y. Chen, J. H. He, “Photocarrier Relaxation Behavior of a Single ZnO Nanowire UV Photodetector: Effect of Surface Band Bending,” IEEE Electron Device Lett. 33, 411 (2012).

Chen, C.-C.

R.-S. Chen, S.-W. Wang, Z.-H. Lan, J. T.-H. Tsai, C.-T. Wu, L.-C. Chen, K.-H. Chen, Y.-S. Huang, C.-C. Chen, “On-Chip Fabrication of Well-Aligned and Contact-Barrier-Free GaN Nanobridge Devices with Ultrahigh Photocurrent Responsivity,” Small 4(7), 925–929 (2008).
[CrossRef] [PubMed]

Chen, H. Y.

H. M. Huang, R. S. Chen, H. Y. Chen, T. W. Liu, C. C. Kuo, C. P. Chen, H. C. Hsu, L. C. Chen, K. H. Chen, Y. J. Yang, “Photoconductivity in single AlN nanowires by subband gap excitation,” Appl. Phys. Lett. 96(6), 062104 (2010).
[CrossRef]

Chen, K. H.

H. M. Huang, R. S. Chen, H. Y. Chen, T. W. Liu, C. C. Kuo, C. P. Chen, H. C. Hsu, L. C. Chen, K. H. Chen, Y. J. Yang, “Photoconductivity in single AlN nanowires by subband gap excitation,” Appl. Phys. Lett. 96(6), 062104 (2010).
[CrossRef]

Chen, K.-H.

R.-S. Chen, S.-W. Wang, Z.-H. Lan, J. T.-H. Tsai, C.-T. Wu, L.-C. Chen, K.-H. Chen, Y.-S. Huang, C.-C. Chen, “On-Chip Fabrication of Well-Aligned and Contact-Barrier-Free GaN Nanobridge Devices with Ultrahigh Photocurrent Responsivity,” Small 4(7), 925–929 (2008).
[CrossRef] [PubMed]

Chen, L. C.

H. M. Huang, R. S. Chen, H. Y. Chen, T. W. Liu, C. C. Kuo, C. P. Chen, H. C. Hsu, L. C. Chen, K. H. Chen, Y. J. Yang, “Photoconductivity in single AlN nanowires by subband gap excitation,” Appl. Phys. Lett. 96(6), 062104 (2010).
[CrossRef]

Chen, L. J.

M. Afsal, C. Y. Wang, L. W. Chu, H. Ouyang, L. J. Chen, “Highly sensitive metal–insulator–semiconductor UV photodetectors based on ZnO/SiO2 core–shell nanowires,” J. Mater. Chem. 22(17), 8420–8425 (2012).
[CrossRef]

Chen, L.-C.

R.-S. Chen, S.-W. Wang, Z.-H. Lan, J. T.-H. Tsai, C.-T. Wu, L.-C. Chen, K.-H. Chen, Y.-S. Huang, C.-C. Chen, “On-Chip Fabrication of Well-Aligned and Contact-Barrier-Free GaN Nanobridge Devices with Ultrahigh Photocurrent Responsivity,” Small 4(7), 925–929 (2008).
[CrossRef] [PubMed]

Chen, L.-J.

T.-Y. Wei, C.-T. Huang, B. J. Hansen, Y.-F. Lin, L.-J. Chen, S.-Y. Lu, Z. L. Wang, “Large enhancement in photon detection sensitivity via Schottky-gated CdS nanowire nanosensors,” Appl. Phys. Lett. 96(1), 013508 (2010).
[CrossRef]

Chen, M. W.

M. W. Chen, J. R. D. Retamal, C. Y. Chen, J. H. He, “Photocarrier Relaxation Behavior of a Single ZnO Nanowire UV Photodetector: Effect of Surface Band Bending,” IEEE Electron Device Lett. 33, 411 (2012).

Chen, R. S.

H. M. Huang, R. S. Chen, H. Y. Chen, T. W. Liu, C. C. Kuo, C. P. Chen, H. C. Hsu, L. C. Chen, K. H. Chen, Y. J. Yang, “Photoconductivity in single AlN nanowires by subband gap excitation,” Appl. Phys. Lett. 96(6), 062104 (2010).
[CrossRef]

Chen, R.-S.

R.-S. Chen, S.-W. Wang, Z.-H. Lan, J. T.-H. Tsai, C.-T. Wu, L.-C. Chen, K.-H. Chen, Y.-S. Huang, C.-C. Chen, “On-Chip Fabrication of Well-Aligned and Contact-Barrier-Free GaN Nanobridge Devices with Ultrahigh Photocurrent Responsivity,” Small 4(7), 925–929 (2008).
[CrossRef] [PubMed]

Cheng, J.

A. Zhang, H. Kim, J. Cheng, Y.-H. Lo, “Ultrahigh Responsivity Visible and Infrared Detection Using Silicon Nanowire Phototransistors,” Nano Lett. 10(6), 2117–2120 (2010).
[CrossRef] [PubMed]

Cheng, M.

S. C. Kung, W. Xing, W.-E. van der Veer, F. Yang, K.-C. Donavan, M. Cheng, J.-C. Hemminger, R.-M. Penner, “Tunable Photoconduction Sensitivity and Bandwidth for Lithographically Patterned Nanocrystalline Cadmium Selenide Nanowires,” ACS Nano 5(9), 7627–7639 (2011).
[CrossRef] [PubMed]

Chu, L. W.

M. Afsal, C. Y. Wang, L. W. Chu, H. Ouyang, L. J. Chen, “Highly sensitive metal–insulator–semiconductor UV photodetectors based on ZnO/SiO2 core–shell nanowires,” J. Mater. Chem. 22(17), 8420–8425 (2012).
[CrossRef]

Chui, C. O.

A. K. Okyay, C. O. Chui, K. C. Saraswat, “Leakage suppression by asymmetric area electrodes in metal-semiconductor-metal photodetectors,” Appl. Phys. Lett. 88(6), 063506 (2006).
[CrossRef]

Chulkova, G.

G. N. Gol’tsman, O. Okunev, G. Chulkova, A. Lipatov, A. Semenov, K. Smirnov, B. Voronov, A. Dzardanov, C. Williams, R. Sobolewski, “Picosecond superconducting single-photon optical detector,” Appl. Phys. Lett. 79(6), 705–707 (2001).
[CrossRef]

G. N. Gol’tsman, O. Okunev, G. Chulkova, A. Lipatov, A. Semenov, K. Smirnov, B. Voronov, A. Dzardanov, “Picosecond superconducting single-photon optical detector,” Appl. Phys. Lett. 79, 705–707 (2001).

Cowan, D. O.

R. S. Potember, T. O. Poehler, D. O. Cowan, “Electrical switching and memory phenomena in CuTCNQ thin films,” Appl. Phys. Lett. 34(6), 405–407 (1979).
[CrossRef]

Cui, Y.

J. Wang, M. S. Gudiksen, X. Duan, Y. Cui, C. M. Lieber, “Highly Polarized Photoluminescence and Photodetection from Single Indium Phosphide Nanowires,” Science 293(5534), 1455–1457 (2001).
[CrossRef] [PubMed]

Donavan, K.-C.

S. C. Kung, W. Xing, W.-E. van der Veer, F. Yang, K.-C. Donavan, M. Cheng, J.-C. Hemminger, R.-M. Penner, “Tunable Photoconduction Sensitivity and Bandwidth for Lithographically Patterned Nanocrystalline Cadmium Selenide Nanowires,” ACS Nano 5(9), 7627–7639 (2011).
[CrossRef] [PubMed]

Duan, X.

J. Wang, M. S. Gudiksen, X. Duan, Y. Cui, C. M. Lieber, “Highly Polarized Photoluminescence and Photodetection from Single Indium Phosphide Nanowires,” Science 293(5534), 1455–1457 (2001).
[CrossRef] [PubMed]

Dunning, J.

Y. Ahn, J. Dunning, J. Park, “Scanning Photocurrent Imaging and Electronic Band Studies in Silicon Nanowire Field Effect Transistors,” Nano Lett. 5(7), 1367–1370 (2005).
[CrossRef] [PubMed]

Dzardanov, A.

G. N. Gol’tsman, O. Okunev, G. Chulkova, A. Lipatov, A. Semenov, K. Smirnov, B. Voronov, A. Dzardanov, C. Williams, R. Sobolewski, “Picosecond superconducting single-photon optical detector,” Appl. Phys. Lett. 79(6), 705–707 (2001).
[CrossRef]

G. N. Gol’tsman, O. Okunev, G. Chulkova, A. Lipatov, A. Semenov, K. Smirnov, B. Voronov, A. Dzardanov, “Picosecond superconducting single-photon optical detector,” Appl. Phys. Lett. 79, 705–707 (2001).

Freitag, M.

M. Freitag, Y. Martin, J. A. Misewich, R. Martel, P. Avouris, “Photoconductivity of Single Carbon Nanotubes,” Nano Lett. 3(8), 1067–1071 (2003).
[CrossRef]

Gao, X.

X. N. Xie, Y. Xie, X. Gao, C. H. Sow, A. T. S. Wee, “Metallic Nanoparticle Network for Photocurrent Generation and Photodetection,” Adv. Mater. 21(29), 3016–3021 (2009).
[CrossRef]

Gol’tsman, G. N.

G. N. Gol’tsman, O. Okunev, G. Chulkova, A. Lipatov, A. Semenov, K. Smirnov, B. Voronov, A. Dzardanov, “Picosecond superconducting single-photon optical detector,” Appl. Phys. Lett. 79, 705–707 (2001).

G. N. Gol’tsman, O. Okunev, G. Chulkova, A. Lipatov, A. Semenov, K. Smirnov, B. Voronov, A. Dzardanov, C. Williams, R. Sobolewski, “Picosecond superconducting single-photon optical detector,” Appl. Phys. Lett. 79(6), 705–707 (2001).
[CrossRef]

Gu, Y.

Y. Gu, E.-S. Kwak, J. L. Lensch, J. E. Allen, T. W. Odom, L. J. Lauhon, “Near-field scanning photocurrent microscopy of a nanowire photodetector,” Appl. Phys. Lett. 87(4), 043111 (2005).
[CrossRef]

Gudiksen, M. S.

J. Wang, M. S. Gudiksen, X. Duan, Y. Cui, C. M. Lieber, “Highly Polarized Photoluminescence and Photodetection from Single Indium Phosphide Nanowires,” Science 293(5534), 1455–1457 (2001).
[CrossRef] [PubMed]

Hansen, B. J.

T.-Y. Wei, C.-T. Huang, B. J. Hansen, Y.-F. Lin, L.-J. Chen, S.-Y. Lu, Z. L. Wang, “Large enhancement in photon detection sensitivity via Schottky-gated CdS nanowire nanosensors,” Appl. Phys. Lett. 96(1), 013508 (2010).
[CrossRef]

He, D.

K. Huang, Q. Zhang, F. Yang, D. He, “Ultraviolet photoconductance of a single hexagonal WO3 nanowire,” Nano Res. 3, 281–287 (2010).
[CrossRef]

He, J. H.

M. W. Chen, J. R. D. Retamal, C. Y. Chen, J. H. He, “Photocarrier Relaxation Behavior of a Single ZnO Nanowire UV Photodetector: Effect of Surface Band Bending,” IEEE Electron Device Lett. 33, 411 (2012).

He, Z.

X. Zhang, J. Jie, W. Zhang, C. Zhang, L. Luo, Z. He, X. Zhang, W. Zhang, C. Lee, S. Lee, “Photoconductivity of a Single Small-Molecule Organic Nanowire,” Adv. Mater. 20(12), 2427–2432 (2008).
[CrossRef]

Hemminger, J.-C.

S. C. Kung, W. Xing, W.-E. van der Veer, F. Yang, K.-C. Donavan, M. Cheng, J.-C. Hemminger, R.-M. Penner, “Tunable Photoconduction Sensitivity and Bandwidth for Lithographically Patterned Nanocrystalline Cadmium Selenide Nanowires,” ACS Nano 5(9), 7627–7639 (2011).
[CrossRef] [PubMed]

Hocevar, M.

G. Bulgarini, M. E. Reimer, M. Hocevar, E. P. A. M. Bakkers, L. P. Kouwenhoven, V. Zwiller, “Avalanche amplification of a single exciton in a semiconductor nanowire,” Nat. Photonics 6(7), 455–458 (2012).
[CrossRef]

Hsu, H. C.

H. M. Huang, R. S. Chen, H. Y. Chen, T. W. Liu, C. C. Kuo, C. P. Chen, H. C. Hsu, L. C. Chen, K. H. Chen, Y. J. Yang, “Photoconductivity in single AlN nanowires by subband gap excitation,” Appl. Phys. Lett. 96(6), 062104 (2010).
[CrossRef]

Huang, C.-T.

T.-Y. Wei, C.-T. Huang, B. J. Hansen, Y.-F. Lin, L.-J. Chen, S.-Y. Lu, Z. L. Wang, “Large enhancement in photon detection sensitivity via Schottky-gated CdS nanowire nanosensors,” Appl. Phys. Lett. 96(1), 013508 (2010).
[CrossRef]

Huang, H. M.

H. M. Huang, R. S. Chen, H. Y. Chen, T. W. Liu, C. C. Kuo, C. P. Chen, H. C. Hsu, L. C. Chen, K. H. Chen, Y. J. Yang, “Photoconductivity in single AlN nanowires by subband gap excitation,” Appl. Phys. Lett. 96(6), 062104 (2010).
[CrossRef]

Huang, K.

K. Huang, Q. Zhang, F. Yang, D. He, “Ultraviolet photoconductance of a single hexagonal WO3 nanowire,” Nano Res. 3, 281–287 (2010).
[CrossRef]

Huang, Y.-S.

R.-S. Chen, S.-W. Wang, Z.-H. Lan, J. T.-H. Tsai, C.-T. Wu, L.-C. Chen, K.-H. Chen, Y.-S. Huang, C.-C. Chen, “On-Chip Fabrication of Well-Aligned and Contact-Barrier-Free GaN Nanobridge Devices with Ultrahigh Photocurrent Responsivity,” Small 4(7), 925–929 (2008).
[CrossRef] [PubMed]

Javier Baca, F.

Z. Li, C. Rochford, F. Javier Baca, J. Liu, J. Li, J. Wu, “Investigation into Photoconductivity in Single CNF/TiO2-Dye Core-Shell Nanowire Devices,” Nanoscale Res. Lett. 5(9), 1480–1486 (2010).
[CrossRef] [PubMed]

Jiang, Y.

J. S. Jie, W. J. Zhang, Y. Jiang, X. M. Meng, Y. Q. Li, S. T. Lee, “Photoconductive Characteristics of Single-Crystal CdS Nanoribbons,” Nano Lett. 6(9), 1887–1892 (2006).
[CrossRef] [PubMed]

Jie, J.

X. Zhang, J. Jie, W. Zhang, C. Zhang, L. Luo, Z. He, X. Zhang, W. Zhang, C. Lee, S. Lee, “Photoconductivity of a Single Small-Molecule Organic Nanowire,” Adv. Mater. 20(12), 2427–2432 (2008).
[CrossRef]

Jie, J. S.

J. S. Jie, W. J. Zhang, Y. Jiang, X. M. Meng, Y. Q. Li, S. T. Lee, “Photoconductive Characteristics of Single-Crystal CdS Nanoribbons,” Nano Lett. 6(9), 1887–1892 (2006).
[CrossRef] [PubMed]

Kim, H.

A. Zhang, H. Kim, J. Cheng, Y.-H. Lo, “Ultrahigh Responsivity Visible and Infrared Detection Using Silicon Nanowire Phototransistors,” Nano Lett. 10(6), 2117–2120 (2010).
[CrossRef] [PubMed]

Kind, H.

H. Kind, H. Yan, B. Messer, M. Law, P. Yang, “Nanowire Ultraviolet Photodetectors and Optical Switches,” Adv. Mater. 14(2), 158–160 (2002).
[CrossRef]

Kouwenhoven, L. P.

G. Bulgarini, M. E. Reimer, M. Hocevar, E. P. A. M. Bakkers, L. P. Kouwenhoven, V. Zwiller, “Avalanche amplification of a single exciton in a semiconductor nanowire,” Nat. Photonics 6(7), 455–458 (2012).
[CrossRef]

Kung, S. C.

S. C. Kung, W. Xing, W.-E. van der Veer, F. Yang, K.-C. Donavan, M. Cheng, J.-C. Hemminger, R.-M. Penner, “Tunable Photoconduction Sensitivity and Bandwidth for Lithographically Patterned Nanocrystalline Cadmium Selenide Nanowires,” ACS Nano 5(9), 7627–7639 (2011).
[CrossRef] [PubMed]

Kuo, C. C.

H. M. Huang, R. S. Chen, H. Y. Chen, T. W. Liu, C. C. Kuo, C. P. Chen, H. C. Hsu, L. C. Chen, K. H. Chen, Y. J. Yang, “Photoconductivity in single AlN nanowires by subband gap excitation,” Appl. Phys. Lett. 96(6), 062104 (2010).
[CrossRef]

Kwak, E.-S.

Y. Gu, E.-S. Kwak, J. L. Lensch, J. E. Allen, T. W. Odom, L. J. Lauhon, “Near-field scanning photocurrent microscopy of a nanowire photodetector,” Appl. Phys. Lett. 87(4), 043111 (2005).
[CrossRef]

Lan, Z.-H.

R.-S. Chen, S.-W. Wang, Z.-H. Lan, J. T.-H. Tsai, C.-T. Wu, L.-C. Chen, K.-H. Chen, Y.-S. Huang, C.-C. Chen, “On-Chip Fabrication of Well-Aligned and Contact-Barrier-Free GaN Nanobridge Devices with Ultrahigh Photocurrent Responsivity,” Small 4(7), 925–929 (2008).
[CrossRef] [PubMed]

Lauhon, L. J.

Y. Gu, E.-S. Kwak, J. L. Lensch, J. E. Allen, T. W. Odom, L. J. Lauhon, “Near-field scanning photocurrent microscopy of a nanowire photodetector,” Appl. Phys. Lett. 87(4), 043111 (2005).
[CrossRef]

Law, M.

H. Kind, H. Yan, B. Messer, M. Law, P. Yang, “Nanowire Ultraviolet Photodetectors and Optical Switches,” Adv. Mater. 14(2), 158–160 (2002).
[CrossRef]

Lee, C.

X. Zhang, J. Jie, W. Zhang, C. Zhang, L. Luo, Z. He, X. Zhang, W. Zhang, C. Lee, S. Lee, “Photoconductivity of a Single Small-Molecule Organic Nanowire,” Adv. Mater. 20(12), 2427–2432 (2008).
[CrossRef]

Lee, S.

X. Zhang, J. Jie, W. Zhang, C. Zhang, L. Luo, Z. He, X. Zhang, W. Zhang, C. Lee, S. Lee, “Photoconductivity of a Single Small-Molecule Organic Nanowire,” Adv. Mater. 20(12), 2427–2432 (2008).
[CrossRef]

Lee, S. T.

J. S. Jie, W. J. Zhang, Y. Jiang, X. M. Meng, Y. Q. Li, S. T. Lee, “Photoconductive Characteristics of Single-Crystal CdS Nanoribbons,” Nano Lett. 6(9), 1887–1892 (2006).
[CrossRef] [PubMed]

Lensch, J. L.

Y. Gu, E.-S. Kwak, J. L. Lensch, J. E. Allen, T. W. Odom, L. J. Lauhon, “Near-field scanning photocurrent microscopy of a nanowire photodetector,” Appl. Phys. Lett. 87(4), 043111 (2005).
[CrossRef]

Li, J.

Z. Li, C. Rochford, F. Javier Baca, J. Liu, J. Li, J. Wu, “Investigation into Photoconductivity in Single CNF/TiO2-Dye Core-Shell Nanowire Devices,” Nanoscale Res. Lett. 5(9), 1480–1486 (2010).
[CrossRef] [PubMed]

Li, Y. Q.

J. S. Jie, W. J. Zhang, Y. Jiang, X. M. Meng, Y. Q. Li, S. T. Lee, “Photoconductive Characteristics of Single-Crystal CdS Nanoribbons,” Nano Lett. 6(9), 1887–1892 (2006).
[CrossRef] [PubMed]

Li, Z.

Z. Li, C. Rochford, F. Javier Baca, J. Liu, J. Li, J. Wu, “Investigation into Photoconductivity in Single CNF/TiO2-Dye Core-Shell Nanowire Devices,” Nanoscale Res. Lett. 5(9), 1480–1486 (2010).
[CrossRef] [PubMed]

Lieber, C. M.

J. Wang, M. S. Gudiksen, X. Duan, Y. Cui, C. M. Lieber, “Highly Polarized Photoluminescence and Photodetection from Single Indium Phosphide Nanowires,” Science 293(5534), 1455–1457 (2001).
[CrossRef] [PubMed]

Lin, Y.-F.

T.-Y. Wei, C.-T. Huang, B. J. Hansen, Y.-F. Lin, L.-J. Chen, S.-Y. Lu, Z. L. Wang, “Large enhancement in photon detection sensitivity via Schottky-gated CdS nanowire nanosensors,” Appl. Phys. Lett. 96(1), 013508 (2010).
[CrossRef]

Lipatov, A.

G. N. Gol’tsman, O. Okunev, G. Chulkova, A. Lipatov, A. Semenov, K. Smirnov, B. Voronov, A. Dzardanov, C. Williams, R. Sobolewski, “Picosecond superconducting single-photon optical detector,” Appl. Phys. Lett. 79(6), 705–707 (2001).
[CrossRef]

G. N. Gol’tsman, O. Okunev, G. Chulkova, A. Lipatov, A. Semenov, K. Smirnov, B. Voronov, A. Dzardanov, “Picosecond superconducting single-photon optical detector,” Appl. Phys. Lett. 79, 705–707 (2001).

Liu, J.

Z. Li, C. Rochford, F. Javier Baca, J. Liu, J. Li, J. Wu, “Investigation into Photoconductivity in Single CNF/TiO2-Dye Core-Shell Nanowire Devices,” Nanoscale Res. Lett. 5(9), 1480–1486 (2010).
[CrossRef] [PubMed]

Liu, S.-G.

S.-G. Liu, Y.-Q. Liu, P.-J. Wu, D.-B. Zhu, “Multifaceted Study of CuTCNQ Thin-Film Materials.Fabrication, Morphology, and Spectral and Electrical Switching Properties,” Chem. Mater. 8(12), 2779–2787 (1996).
[CrossRef]

Liu, T. W.

H. M. Huang, R. S. Chen, H. Y. Chen, T. W. Liu, C. C. Kuo, C. P. Chen, H. C. Hsu, L. C. Chen, K. H. Chen, Y. J. Yang, “Photoconductivity in single AlN nanowires by subband gap excitation,” Appl. Phys. Lett. 96(6), 062104 (2010).
[CrossRef]

Liu, Y.

Y. Liu, Q. Yang, Y. Zhang, Z. Yang, Z. L. Wang, “Nanowire Piezo-Phototronic Photodetector: Theory and Experimental Design,” Adv. Mater. 24(11), 1410–1417 (2012).
[CrossRef] [PubMed]

Liu, Y.-Q.

S.-G. Liu, Y.-Q. Liu, P.-J. Wu, D.-B. Zhu, “Multifaceted Study of CuTCNQ Thin-Film Materials.Fabrication, Morphology, and Spectral and Electrical Switching Properties,” Chem. Mater. 8(12), 2779–2787 (1996).
[CrossRef]

Lo, Y.-H.

A. Zhang, H. Kim, J. Cheng, Y.-H. Lo, “Ultrahigh Responsivity Visible and Infrared Detection Using Silicon Nanowire Phototransistors,” Nano Lett. 10(6), 2117–2120 (2010).
[CrossRef] [PubMed]

Lu, S.-Y.

T.-Y. Wei, C.-T. Huang, B. J. Hansen, Y.-F. Lin, L.-J. Chen, S.-Y. Lu, Z. L. Wang, “Large enhancement in photon detection sensitivity via Schottky-gated CdS nanowire nanosensors,” Appl. Phys. Lett. 96(1), 013508 (2010).
[CrossRef]

Luo, L.

X. Zhang, J. Jie, W. Zhang, C. Zhang, L. Luo, Z. He, X. Zhang, W. Zhang, C. Lee, S. Lee, “Photoconductivity of a Single Small-Molecule Organic Nanowire,” Adv. Mater. 20(12), 2427–2432 (2008).
[CrossRef]

Lüth, H.

R. Calarco, M. Marso, T. Richter, A. I. Aykanat, R. Meijers, A. v.d. Hart, T. Stoica, H. Lüth, “Size-dependent Photoconductivity in MBE-Grown GaN-Nanowires,” Nano Lett. 5(5), 981–984 (2005).
[CrossRef] [PubMed]

Marso, M.

R. Calarco, M. Marso, T. Richter, A. I. Aykanat, R. Meijers, A. v.d. Hart, T. Stoica, H. Lüth, “Size-dependent Photoconductivity in MBE-Grown GaN-Nanowires,” Nano Lett. 5(5), 981–984 (2005).
[CrossRef] [PubMed]

Martel, R.

M. Freitag, Y. Martin, J. A. Misewich, R. Martel, P. Avouris, “Photoconductivity of Single Carbon Nanotubes,” Nano Lett. 3(8), 1067–1071 (2003).
[CrossRef]

Martin, Y.

M. Freitag, Y. Martin, J. A. Misewich, R. Martel, P. Avouris, “Photoconductivity of Single Carbon Nanotubes,” Nano Lett. 3(8), 1067–1071 (2003).
[CrossRef]

Matsushige, K.

T. Oyamada, H. Tanaka, K. Matsushige, H. Sasabe, C. Adachi, “Switching effect in Cu:TCNQ charge transfer-complex thin films by vacuum codeposition,” Appl. Phys. Lett. 83(6), 1252–1254 (2003).
[CrossRef]

Mehta, R. R.

R. R. Mehta, B. S. Sharma, “Photoconductive gain greater than unity in CdSe films with Schottky barriers at the contacts,” J. Appl. Phys. 44(1), 325–328 (1973).

Meijers, R.

R. Calarco, M. Marso, T. Richter, A. I. Aykanat, R. Meijers, A. v.d. Hart, T. Stoica, H. Lüth, “Size-dependent Photoconductivity in MBE-Grown GaN-Nanowires,” Nano Lett. 5(5), 981–984 (2005).
[CrossRef] [PubMed]

Meng, X. M.

J. S. Jie, W. J. Zhang, Y. Jiang, X. M. Meng, Y. Q. Li, S. T. Lee, “Photoconductive Characteristics of Single-Crystal CdS Nanoribbons,” Nano Lett. 6(9), 1887–1892 (2006).
[CrossRef] [PubMed]

Messer, B.

H. Kind, H. Yan, B. Messer, M. Law, P. Yang, “Nanowire Ultraviolet Photodetectors and Optical Switches,” Adv. Mater. 14(2), 158–160 (2002).
[CrossRef]

Misewich, J. A.

M. Freitag, Y. Martin, J. A. Misewich, R. Martel, P. Avouris, “Photoconductivity of Single Carbon Nanotubes,” Nano Lett. 3(8), 1067–1071 (2003).
[CrossRef]

Narayan, K. S.

M. Rao, K. S. Narayan, “Evaluation of electrode-semiconductor barrier in transparent top-contact polymer field effect transistors,” Appl. Phys. Lett. 92(22), 223308 (2008).
[CrossRef]

O’Brien, G. A.

G. A. O’Brien, A. J. Quinn, D. A. Tanner, G. Redmond, “A Single Polymer Nanowire Photodetector,” Adv. Mater. 18(18), 2379–2383 (2006).
[CrossRef]

Odom, T. W.

Y. Gu, E.-S. Kwak, J. L. Lensch, J. E. Allen, T. W. Odom, L. J. Lauhon, “Near-field scanning photocurrent microscopy of a nanowire photodetector,” Appl. Phys. Lett. 87(4), 043111 (2005).
[CrossRef]

Okunev, O.

G. N. Gol’tsman, O. Okunev, G. Chulkova, A. Lipatov, A. Semenov, K. Smirnov, B. Voronov, A. Dzardanov, C. Williams, R. Sobolewski, “Picosecond superconducting single-photon optical detector,” Appl. Phys. Lett. 79(6), 705–707 (2001).
[CrossRef]

G. N. Gol’tsman, O. Okunev, G. Chulkova, A. Lipatov, A. Semenov, K. Smirnov, B. Voronov, A. Dzardanov, “Picosecond superconducting single-photon optical detector,” Appl. Phys. Lett. 79, 705–707 (2001).

Okyay, A. K.

A. K. Okyay, C. O. Chui, K. C. Saraswat, “Leakage suppression by asymmetric area electrodes in metal-semiconductor-metal photodetectors,” Appl. Phys. Lett. 88(6), 063506 (2006).
[CrossRef]

Ouyang, H.

M. Afsal, C. Y. Wang, L. W. Chu, H. Ouyang, L. J. Chen, “Highly sensitive metal–insulator–semiconductor UV photodetectors based on ZnO/SiO2 core–shell nanowires,” J. Mater. Chem. 22(17), 8420–8425 (2012).
[CrossRef]

Oyamada, T.

T. Oyamada, H. Tanaka, K. Matsushige, H. Sasabe, C. Adachi, “Switching effect in Cu:TCNQ charge transfer-complex thin films by vacuum codeposition,” Appl. Phys. Lett. 83(6), 1252–1254 (2003).
[CrossRef]

Park, J.

Y. Ahn, J. Dunning, J. Park, “Scanning Photocurrent Imaging and Electronic Band Studies in Silicon Nanowire Field Effect Transistors,” Nano Lett. 5(7), 1367–1370 (2005).
[CrossRef] [PubMed]

Penner, R.-M.

S. C. Kung, W. Xing, W.-E. van der Veer, F. Yang, K.-C. Donavan, M. Cheng, J.-C. Hemminger, R.-M. Penner, “Tunable Photoconduction Sensitivity and Bandwidth for Lithographically Patterned Nanocrystalline Cadmium Selenide Nanowires,” ACS Nano 5(9), 7627–7639 (2011).
[CrossRef] [PubMed]

Poehler, T. O.

R. S. Potember, T. O. Poehler, D. O. Cowan, “Electrical switching and memory phenomena in CuTCNQ thin films,” Appl. Phys. Lett. 34(6), 405–407 (1979).
[CrossRef]

Potember, R. S.

R. S. Potember, T. O. Poehler, D. O. Cowan, “Electrical switching and memory phenomena in CuTCNQ thin films,” Appl. Phys. Lett. 34(6), 405–407 (1979).
[CrossRef]

Quinn, A. J.

G. A. O’Brien, A. J. Quinn, D. A. Tanner, G. Redmond, “A Single Polymer Nanowire Photodetector,” Adv. Mater. 18(18), 2379–2383 (2006).
[CrossRef]

Rao, M.

M. Rao, K. S. Narayan, “Evaluation of electrode-semiconductor barrier in transparent top-contact polymer field effect transistors,” Appl. Phys. Lett. 92(22), 223308 (2008).
[CrossRef]

Redmond, G.

G. A. O’Brien, A. J. Quinn, D. A. Tanner, G. Redmond, “A Single Polymer Nanowire Photodetector,” Adv. Mater. 18(18), 2379–2383 (2006).
[CrossRef]

Reimer, M. E.

G. Bulgarini, M. E. Reimer, M. Hocevar, E. P. A. M. Bakkers, L. P. Kouwenhoven, V. Zwiller, “Avalanche amplification of a single exciton in a semiconductor nanowire,” Nat. Photonics 6(7), 455–458 (2012).
[CrossRef]

Retamal, J. R. D.

M. W. Chen, J. R. D. Retamal, C. Y. Chen, J. H. He, “Photocarrier Relaxation Behavior of a Single ZnO Nanowire UV Photodetector: Effect of Surface Band Bending,” IEEE Electron Device Lett. 33, 411 (2012).

Richter, T.

R. Calarco, M. Marso, T. Richter, A. I. Aykanat, R. Meijers, A. v.d. Hart, T. Stoica, H. Lüth, “Size-dependent Photoconductivity in MBE-Grown GaN-Nanowires,” Nano Lett. 5(5), 981–984 (2005).
[CrossRef] [PubMed]

Rochford, C.

Z. Li, C. Rochford, F. Javier Baca, J. Liu, J. Li, J. Wu, “Investigation into Photoconductivity in Single CNF/TiO2-Dye Core-Shell Nanowire Devices,” Nanoscale Res. Lett. 5(9), 1480–1486 (2010).
[CrossRef] [PubMed]

Saraswat, K. C.

A. K. Okyay, C. O. Chui, K. C. Saraswat, “Leakage suppression by asymmetric area electrodes in metal-semiconductor-metal photodetectors,” Appl. Phys. Lett. 88(6), 063506 (2006).
[CrossRef]

Sasabe, H.

T. Oyamada, H. Tanaka, K. Matsushige, H. Sasabe, C. Adachi, “Switching effect in Cu:TCNQ charge transfer-complex thin films by vacuum codeposition,” Appl. Phys. Lett. 83(6), 1252–1254 (2003).
[CrossRef]

Semenov, A.

G. N. Gol’tsman, O. Okunev, G. Chulkova, A. Lipatov, A. Semenov, K. Smirnov, B. Voronov, A. Dzardanov, C. Williams, R. Sobolewski, “Picosecond superconducting single-photon optical detector,” Appl. Phys. Lett. 79(6), 705–707 (2001).
[CrossRef]

G. N. Gol’tsman, O. Okunev, G. Chulkova, A. Lipatov, A. Semenov, K. Smirnov, B. Voronov, A. Dzardanov, “Picosecond superconducting single-photon optical detector,” Appl. Phys. Lett. 79, 705–707 (2001).

Sharma, B. S.

R. R. Mehta, B. S. Sharma, “Photoconductive gain greater than unity in CdSe films with Schottky barriers at the contacts,” J. Appl. Phys. 44(1), 325–328 (1973).

Smirnov, K.

G. N. Gol’tsman, O. Okunev, G. Chulkova, A. Lipatov, A. Semenov, K. Smirnov, B. Voronov, A. Dzardanov, “Picosecond superconducting single-photon optical detector,” Appl. Phys. Lett. 79, 705–707 (2001).

G. N. Gol’tsman, O. Okunev, G. Chulkova, A. Lipatov, A. Semenov, K. Smirnov, B. Voronov, A. Dzardanov, C. Williams, R. Sobolewski, “Picosecond superconducting single-photon optical detector,” Appl. Phys. Lett. 79(6), 705–707 (2001).
[CrossRef]

Sobolewski, R.

G. N. Gol’tsman, O. Okunev, G. Chulkova, A. Lipatov, A. Semenov, K. Smirnov, B. Voronov, A. Dzardanov, C. Williams, R. Sobolewski, “Picosecond superconducting single-photon optical detector,” Appl. Phys. Lett. 79(6), 705–707 (2001).
[CrossRef]

Sow, C. H.

X. N. Xie, Y. Xie, X. Gao, C. H. Sow, A. T. S. Wee, “Metallic Nanoparticle Network for Photocurrent Generation and Photodetection,” Adv. Mater. 21(29), 3016–3021 (2009).
[CrossRef]

Stoica, T.

R. Calarco, M. Marso, T. Richter, A. I. Aykanat, R. Meijers, A. v.d. Hart, T. Stoica, H. Lüth, “Size-dependent Photoconductivity in MBE-Grown GaN-Nanowires,” Nano Lett. 5(5), 981–984 (2005).
[CrossRef] [PubMed]

Tanaka, H.

T. Oyamada, H. Tanaka, K. Matsushige, H. Sasabe, C. Adachi, “Switching effect in Cu:TCNQ charge transfer-complex thin films by vacuum codeposition,” Appl. Phys. Lett. 83(6), 1252–1254 (2003).
[CrossRef]

Tanner, D. A.

G. A. O’Brien, A. J. Quinn, D. A. Tanner, G. Redmond, “A Single Polymer Nanowire Photodetector,” Adv. Mater. 18(18), 2379–2383 (2006).
[CrossRef]

Tsai, J. T.-H.

R.-S. Chen, S.-W. Wang, Z.-H. Lan, J. T.-H. Tsai, C.-T. Wu, L.-C. Chen, K.-H. Chen, Y.-S. Huang, C.-C. Chen, “On-Chip Fabrication of Well-Aligned and Contact-Barrier-Free GaN Nanobridge Devices with Ultrahigh Photocurrent Responsivity,” Small 4(7), 925–929 (2008).
[CrossRef] [PubMed]

v.d. Hart, A.

R. Calarco, M. Marso, T. Richter, A. I. Aykanat, R. Meijers, A. v.d. Hart, T. Stoica, H. Lüth, “Size-dependent Photoconductivity in MBE-Grown GaN-Nanowires,” Nano Lett. 5(5), 981–984 (2005).
[CrossRef] [PubMed]

van der Veer, W.-E.

S. C. Kung, W. Xing, W.-E. van der Veer, F. Yang, K.-C. Donavan, M. Cheng, J.-C. Hemminger, R.-M. Penner, “Tunable Photoconduction Sensitivity and Bandwidth for Lithographically Patterned Nanocrystalline Cadmium Selenide Nanowires,” ACS Nano 5(9), 7627–7639 (2011).
[CrossRef] [PubMed]

Voronov, B.

G. N. Gol’tsman, O. Okunev, G. Chulkova, A. Lipatov, A. Semenov, K. Smirnov, B. Voronov, A. Dzardanov, C. Williams, R. Sobolewski, “Picosecond superconducting single-photon optical detector,” Appl. Phys. Lett. 79(6), 705–707 (2001).
[CrossRef]

G. N. Gol’tsman, O. Okunev, G. Chulkova, A. Lipatov, A. Semenov, K. Smirnov, B. Voronov, A. Dzardanov, “Picosecond superconducting single-photon optical detector,” Appl. Phys. Lett. 79, 705–707 (2001).

Wang, C. Y.

M. Afsal, C. Y. Wang, L. W. Chu, H. Ouyang, L. J. Chen, “Highly sensitive metal–insulator–semiconductor UV photodetectors based on ZnO/SiO2 core–shell nanowires,” J. Mater. Chem. 22(17), 8420–8425 (2012).
[CrossRef]

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J. Wang, M. S. Gudiksen, X. Duan, Y. Cui, C. M. Lieber, “Highly Polarized Photoluminescence and Photodetection from Single Indium Phosphide Nanowires,” Science 293(5534), 1455–1457 (2001).
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R.-S. Chen, S.-W. Wang, Z.-H. Lan, J. T.-H. Tsai, C.-T. Wu, L.-C. Chen, K.-H. Chen, Y.-S. Huang, C.-C. Chen, “On-Chip Fabrication of Well-Aligned and Contact-Barrier-Free GaN Nanobridge Devices with Ultrahigh Photocurrent Responsivity,” Small 4(7), 925–929 (2008).
[CrossRef] [PubMed]

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Y. Liu, Q. Yang, Y. Zhang, Z. Yang, Z. L. Wang, “Nanowire Piezo-Phototronic Photodetector: Theory and Experimental Design,” Adv. Mater. 24(11), 1410–1417 (2012).
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X. N. Xie, Y. Xie, X. Gao, C. H. Sow, A. T. S. Wee, “Metallic Nanoparticle Network for Photocurrent Generation and Photodetection,” Adv. Mater. 21(29), 3016–3021 (2009).
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G. N. Gol’tsman, O. Okunev, G. Chulkova, A. Lipatov, A. Semenov, K. Smirnov, B. Voronov, A. Dzardanov, C. Williams, R. Sobolewski, “Picosecond superconducting single-photon optical detector,” Appl. Phys. Lett. 79(6), 705–707 (2001).
[CrossRef]

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R.-S. Chen, S.-W. Wang, Z.-H. Lan, J. T.-H. Tsai, C.-T. Wu, L.-C. Chen, K.-H. Chen, Y.-S. Huang, C.-C. Chen, “On-Chip Fabrication of Well-Aligned and Contact-Barrier-Free GaN Nanobridge Devices with Ultrahigh Photocurrent Responsivity,” Small 4(7), 925–929 (2008).
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Z. Li, C. Rochford, F. Javier Baca, J. Liu, J. Li, J. Wu, “Investigation into Photoconductivity in Single CNF/TiO2-Dye Core-Shell Nanowire Devices,” Nanoscale Res. Lett. 5(9), 1480–1486 (2010).
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S. C. Kung, W. Xing, W.-E. van der Veer, F. Yang, K.-C. Donavan, M. Cheng, J.-C. Hemminger, R.-M. Penner, “Tunable Photoconduction Sensitivity and Bandwidth for Lithographically Patterned Nanocrystalline Cadmium Selenide Nanowires,” ACS Nano 5(9), 7627–7639 (2011).
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S. C. Kung, W. Xing, W.-E. van der Veer, F. Yang, K.-C. Donavan, M. Cheng, J.-C. Hemminger, R.-M. Penner, “Tunable Photoconduction Sensitivity and Bandwidth for Lithographically Patterned Nanocrystalline Cadmium Selenide Nanowires,” ACS Nano 5(9), 7627–7639 (2011).
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H. Kind, H. Yan, B. Messer, M. Law, P. Yang, “Nanowire Ultraviolet Photodetectors and Optical Switches,” Adv. Mater. 14(2), 158–160 (2002).
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Y. Liu, Q. Yang, Y. Zhang, Z. Yang, Z. L. Wang, “Nanowire Piezo-Phototronic Photodetector: Theory and Experimental Design,” Adv. Mater. 24(11), 1410–1417 (2012).
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X. Zhang, J. Jie, W. Zhang, C. Zhang, L. Luo, Z. He, X. Zhang, W. Zhang, C. Lee, S. Lee, “Photoconductivity of a Single Small-Molecule Organic Nanowire,” Adv. Mater. 20(12), 2427–2432 (2008).
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K. Huang, Q. Zhang, F. Yang, D. He, “Ultraviolet photoconductance of a single hexagonal WO3 nanowire,” Nano Res. 3, 281–287 (2010).
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X. Zhang, J. Jie, W. Zhang, C. Zhang, L. Luo, Z. He, X. Zhang, W. Zhang, C. Lee, S. Lee, “Photoconductivity of a Single Small-Molecule Organic Nanowire,” Adv. Mater. 20(12), 2427–2432 (2008).
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X. Zhang, J. Jie, W. Zhang, C. Zhang, L. Luo, Z. He, X. Zhang, W. Zhang, C. Lee, S. Lee, “Photoconductivity of a Single Small-Molecule Organic Nanowire,” Adv. Mater. 20(12), 2427–2432 (2008).
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J. S. Jie, W. J. Zhang, Y. Jiang, X. M. Meng, Y. Q. Li, S. T. Lee, “Photoconductive Characteristics of Single-Crystal CdS Nanoribbons,” Nano Lett. 6(9), 1887–1892 (2006).
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X. Zhang, J. Jie, W. Zhang, C. Zhang, L. Luo, Z. He, X. Zhang, W. Zhang, C. Lee, S. Lee, “Photoconductivity of a Single Small-Molecule Organic Nanowire,” Adv. Mater. 20(12), 2427–2432 (2008).
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X. Zhang, J. Jie, W. Zhang, C. Zhang, L. Luo, Z. He, X. Zhang, W. Zhang, C. Lee, S. Lee, “Photoconductivity of a Single Small-Molecule Organic Nanowire,” Adv. Mater. 20(12), 2427–2432 (2008).
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Adv. Mater.

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X. Zhang, J. Jie, W. Zhang, C. Zhang, L. Luo, Z. He, X. Zhang, W. Zhang, C. Lee, S. Lee, “Photoconductivity of a Single Small-Molecule Organic Nanowire,” Adv. Mater. 20(12), 2427–2432 (2008).
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J. S. Jie, W. J. Zhang, Y. Jiang, X. M. Meng, Y. Q. Li, S. T. Lee, “Photoconductive Characteristics of Single-Crystal CdS Nanoribbons,” Nano Lett. 6(9), 1887–1892 (2006).
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Figures (5)

Fig. 1
Fig. 1

TEM image of a typical Cu:TCNQ nanowire of diameter 30 nm. Inset (a) shows a FE-TEM image of vertical growth of nanowires on a Cu film. The inset (b) shows an FE-SEM image of a 30 nm single Cu:TCNQ nanowire device connected with four deposited Pt leads (approximate separation ~200nm). Inset (c) shows I-V characteristics of the single nanowire of Cu:TCNQ taken in dark.

Fig. 2
Fig. 2

Schematic of the measurement of the zero bias photo-response with lock-in amplifier.

Fig. 3
Fig. 3

Photocurrent ( I p h ) spectral response of the single nanowire device kept at a constant bias of 0.5 V. Inset shows absorption spectra of CuTCNQ nanowire.

Fig. 4
Fig. 4

Zero bias photocurrent at different optical power density P o p t obtained with an excitation wavelength of 405 nm. The illumination was turned ON and OFF mechanically. (Inset) Ratio of illuminated current over dark showing current gain at zero bias is ~105.

Fig. 5
Fig. 5

I-V curve under illumination (blue circle) of a single Cu:TCNQ nanowire MSM device. Wavelength of illumination is 405 nm. Solid red curve is fit to the MSM model. Inset represents schematic representation of MSM structure.

Tables (1)

Tables Icon

Table 1 MSM Fitted Parameters of I-V in Dark and Under Illumination

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