Abstract

We demonstrate a cost-effective 1.55 µm low chirp 4 × 25 Gbit/s electroabsorption modulated laser (EML) array with 0.8 nm channel spacing by varying ridge width of the lasers and using selective area growth (SAG) integration scheme. The devices for all the 4 channels within the EML array show uniform threshold currents around 18 mA and high SMSRs over 45 dB. The output optical power of each channel is about 9 mW at an injection current of 100 mA. The typical chirp value of single EML measured by a fiber resonance method varied from 2.2 to −4 as the bias voltage was increased from 0 V to 2.5 V. These results show that the EML array is a suitable light source for 100 Gbit/s optical transmissions.

© 2014 Optical Society of America

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References

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  1. IEEE 802.3ba 40 Gb/s and 100 Gb/s Ethernet Task Force Public Area; http://www.ieee802.org/3/ba/index.html .
  2. Y. B. Cheng, J. Q. Pan, Y. Wang, F. Zhou, B. J. Wang, L. J. Zhao, H. L. Zhu, and W. Wang, “40-Gbit/s low chirp electroabsorption modulator integrated with DFB laser,” IEEE Photon. Technol. Lett. 21(6), 356–358 (2009).
    [Crossref]
  3. Y. B. Cheng, J. Q. Pan, S. Liang, W. Feng, Z. Y. Liao, F. Zhou, B. J. Wang, L. J. Zhao, H. L. Zhu, and W. Wang, “Butt-coupled MOVPE growth for high-performance electro-absorption modulator integrated with a DFB laser,” J. Cryst. Growth 308(2), 297–301 (2007).
    [Crossref]
  4. W. Kobayashi, T. Fujisawa, T. Ito, S. Kanazawa, Y. Ueda, and H. Sanjoh, “Advantages of EADFB laser for 25 Gbaud/s 4-PAM (50 Gbit/s) modulation and 10 km single-mode fibre transmission,” Electron. Lett. 50(9), 683–685 (2014).
    [Crossref]
  5. M. N. Ngo, H. T. Nguyen, C. Gosset, D. Erasme, Q. Deniel, N. Genay, R. Guillamet, N. Lagay, J. Decobert, F. Poingt, and R. Brenot, “Electroabsorption Modulated Laser Integrated with a Semiconductor Optical Amplifier for 100-km 10.3 Gb/s Dispersion-Penalty-Free Transmission,” IEEE J. Lightw. Technol. 31(2), 232–238 (2013).
    [Crossref]
  6. J. Kreissl, C. Bornholdt, T. Gaertner, L. Moerl, G. Przyrembel, and W. Rehbein, “Flip-Chip Compatible Electroabsorption Modulator for up to 40 Gb/s, Integrated with 1.55 mu m DFB Laser and Spot-Size Expander,” IEEE J. Quantum Electron. 47(7), 1036–1042 (2011).
    [Crossref]
  7. S. Makino, K. Shinoda, T. Kitatani, H. Hayashi, T. Shiota, S. Tanaka, and et al.., “High-Speed EA-DFB Laser for 40-G and 100-Gbps,” IEICE.T.Electron.  E92c(7), 937–941 (2009).
  8. D. Ton, G. W. Yoffe, J. F. Heanue, M. A. Emanuel, S. Y. Zou, J. Kubicky, B. Pezeshki, and E. C. Vail, “2.5-Gb/s modulated widely-tunable laser using an electroabsorption modulated DFB array and MEMS selection,” IEEE Photon. Technol. Lett. 16(6), 1573–1575 (2004).
    [Crossref]
  9. T. Fujisawa, S. Kanazawa, K. Takahata, W. Kobayashi, T. Tadokoro, H. Ishii, and F. Kano, “1.3-μm, 4 × 25-Gbit/s, EADFB laser array module with large-output-power and low-driving-voltage for energy-efficient 100GbE transmitter,” Opt. Express 20(1), 614–620 (2012).
    [Crossref] [PubMed]
  10. S. Kanazawa, T. Fujisawa, A. Ohki, H. Ishii, N. Nunoya, Y. Kawaguchi, N. Fujiwara, K. Takahata, R. Iga, F. Kano, and H. Oohashi, “A compact EADFB laser array module for a future 100-Gbit/s Ethernet transceiver,” IEEE J. Sel. Top. Quantum Electron. 17(5), 1191–1197 (2011).
    [Crossref]
  11. T. Fujisawa, T. Itoh, S. Kanazawa, K. Takahata, Y. Ueda, R. Iga, H. Sanjo, T. Yamanaka, M. Kotoku, and H. Ishii, “Ultracompact, 160-Gbit/s transmitter optical subassembly based on 40-Gbit/s × 4 monolithically integrated light source,” Opt. Express 21(1), 182–189 (2013).
    [Crossref] [PubMed]
  12. J. S. Sim, S. B. Kim, Y. H. Kwon, Y. S. Baek, and S. W. Ryu, “A Four-Channel Laser Array with Four 10 Gbps Monolithic EAMs Each Integrated with a DBR Laser,” Etri. J. 28(4), 533–536 (2006).
    [Crossref]
  13. S. W. Ryu, J. S. Sim, Y. H. Kwan, S. B. Kim, and Y. S. Baek, “10 Gbps transmission of electroabsorption modulators integrated with a 4-channel distributed Bragg reflector laser array,” Semicond. Sci. Technol. 23(5), 055012 (2008).
    [Crossref]
  14. Y. Nakano and K. Tada, “Analysis, design, and fabrication of GaAlAs/GaAs DFB lasers with modulated stripe width structure for complete single longitudinal mode oscillation,” IEEE J. Quantum Electron. 24(10), 2017–2033 (1988).
    [Crossref]
  15. L. Tao, L. J. Yuan, Y. P. Li, H. Y. Yu, B. J. Wang, Q. Kan, W. X. Chen, J. Q. Pan, G. Z. Ran, and W. Wang, “4-λ InGaAsP-Si distributed feedback evanescent lasers with varying silicon waveguide width,” Opt. Express 22(5), 5448–5454 (2014).
    [Crossref] [PubMed]
  16. J. Hong, W. P. Huang, T. Makino, and G. Pakulski, “Static and Dynamic Characteristics of MQW DFB Lasers with Varying Ridge Width,” IEE Proc., Optoelectron. 141(5), 303–310 (1994).
    [Crossref]
  17. S. R. Jain, M. N. Sysak, G. Kurczveil, and J. E. Bowers, “Integrated hybrid silicon DFB laser-EAM array using quantum well intermixing,” Opt. Express 19(14), 13692–13699 (2011).
    [Crossref] [PubMed]
  18. B. K. Saravanan, T. Wenger, C. Hanke, P. Gerlach, M. Peschke, and R. Macaluso, “Wide temperature operation of 40-Gb/s 1550-nm electroabsorption modulated lasers,” IEEE Photon. Technol. Lett. 18(7), 862–864 (2006).
    [Crossref]
  19. F. Devaux, Y. Sorel, and J. F. Kerdiles, “Simple measurement of fiber dispersion and of chirp parameter of intensity modulated light emitter,” J. Lightwave Technol. 11(12), 1937–1940 (1993).
    [Crossref]

2014 (2)

W. Kobayashi, T. Fujisawa, T. Ito, S. Kanazawa, Y. Ueda, and H. Sanjoh, “Advantages of EADFB laser for 25 Gbaud/s 4-PAM (50 Gbit/s) modulation and 10 km single-mode fibre transmission,” Electron. Lett. 50(9), 683–685 (2014).
[Crossref]

L. Tao, L. J. Yuan, Y. P. Li, H. Y. Yu, B. J. Wang, Q. Kan, W. X. Chen, J. Q. Pan, G. Z. Ran, and W. Wang, “4-λ InGaAsP-Si distributed feedback evanescent lasers with varying silicon waveguide width,” Opt. Express 22(5), 5448–5454 (2014).
[Crossref] [PubMed]

2013 (2)

T. Fujisawa, T. Itoh, S. Kanazawa, K. Takahata, Y. Ueda, R. Iga, H. Sanjo, T. Yamanaka, M. Kotoku, and H. Ishii, “Ultracompact, 160-Gbit/s transmitter optical subassembly based on 40-Gbit/s × 4 monolithically integrated light source,” Opt. Express 21(1), 182–189 (2013).
[Crossref] [PubMed]

M. N. Ngo, H. T. Nguyen, C. Gosset, D. Erasme, Q. Deniel, N. Genay, R. Guillamet, N. Lagay, J. Decobert, F. Poingt, and R. Brenot, “Electroabsorption Modulated Laser Integrated with a Semiconductor Optical Amplifier for 100-km 10.3 Gb/s Dispersion-Penalty-Free Transmission,” IEEE J. Lightw. Technol. 31(2), 232–238 (2013).
[Crossref]

2012 (1)

2011 (3)

S. Kanazawa, T. Fujisawa, A. Ohki, H. Ishii, N. Nunoya, Y. Kawaguchi, N. Fujiwara, K. Takahata, R. Iga, F. Kano, and H. Oohashi, “A compact EADFB laser array module for a future 100-Gbit/s Ethernet transceiver,” IEEE J. Sel. Top. Quantum Electron. 17(5), 1191–1197 (2011).
[Crossref]

J. Kreissl, C. Bornholdt, T. Gaertner, L. Moerl, G. Przyrembel, and W. Rehbein, “Flip-Chip Compatible Electroabsorption Modulator for up to 40 Gb/s, Integrated with 1.55 mu m DFB Laser and Spot-Size Expander,” IEEE J. Quantum Electron. 47(7), 1036–1042 (2011).
[Crossref]

S. R. Jain, M. N. Sysak, G. Kurczveil, and J. E. Bowers, “Integrated hybrid silicon DFB laser-EAM array using quantum well intermixing,” Opt. Express 19(14), 13692–13699 (2011).
[Crossref] [PubMed]

2009 (2)

S. Makino, K. Shinoda, T. Kitatani, H. Hayashi, T. Shiota, S. Tanaka, and et al.., “High-Speed EA-DFB Laser for 40-G and 100-Gbps,” IEICE.T.Electron.  E92c(7), 937–941 (2009).

Y. B. Cheng, J. Q. Pan, Y. Wang, F. Zhou, B. J. Wang, L. J. Zhao, H. L. Zhu, and W. Wang, “40-Gbit/s low chirp electroabsorption modulator integrated with DFB laser,” IEEE Photon. Technol. Lett. 21(6), 356–358 (2009).
[Crossref]

2008 (1)

S. W. Ryu, J. S. Sim, Y. H. Kwan, S. B. Kim, and Y. S. Baek, “10 Gbps transmission of electroabsorption modulators integrated with a 4-channel distributed Bragg reflector laser array,” Semicond. Sci. Technol. 23(5), 055012 (2008).
[Crossref]

2007 (1)

Y. B. Cheng, J. Q. Pan, S. Liang, W. Feng, Z. Y. Liao, F. Zhou, B. J. Wang, L. J. Zhao, H. L. Zhu, and W. Wang, “Butt-coupled MOVPE growth for high-performance electro-absorption modulator integrated with a DFB laser,” J. Cryst. Growth 308(2), 297–301 (2007).
[Crossref]

2006 (2)

J. S. Sim, S. B. Kim, Y. H. Kwon, Y. S. Baek, and S. W. Ryu, “A Four-Channel Laser Array with Four 10 Gbps Monolithic EAMs Each Integrated with a DBR Laser,” Etri. J. 28(4), 533–536 (2006).
[Crossref]

B. K. Saravanan, T. Wenger, C. Hanke, P. Gerlach, M. Peschke, and R. Macaluso, “Wide temperature operation of 40-Gb/s 1550-nm electroabsorption modulated lasers,” IEEE Photon. Technol. Lett. 18(7), 862–864 (2006).
[Crossref]

2004 (1)

D. Ton, G. W. Yoffe, J. F. Heanue, M. A. Emanuel, S. Y. Zou, J. Kubicky, B. Pezeshki, and E. C. Vail, “2.5-Gb/s modulated widely-tunable laser using an electroabsorption modulated DFB array and MEMS selection,” IEEE Photon. Technol. Lett. 16(6), 1573–1575 (2004).
[Crossref]

1994 (1)

J. Hong, W. P. Huang, T. Makino, and G. Pakulski, “Static and Dynamic Characteristics of MQW DFB Lasers with Varying Ridge Width,” IEE Proc., Optoelectron. 141(5), 303–310 (1994).
[Crossref]

1993 (1)

F. Devaux, Y. Sorel, and J. F. Kerdiles, “Simple measurement of fiber dispersion and of chirp parameter of intensity modulated light emitter,” J. Lightwave Technol. 11(12), 1937–1940 (1993).
[Crossref]

1988 (1)

Y. Nakano and K. Tada, “Analysis, design, and fabrication of GaAlAs/GaAs DFB lasers with modulated stripe width structure for complete single longitudinal mode oscillation,” IEEE J. Quantum Electron. 24(10), 2017–2033 (1988).
[Crossref]

Baek, Y. S.

S. W. Ryu, J. S. Sim, Y. H. Kwan, S. B. Kim, and Y. S. Baek, “10 Gbps transmission of electroabsorption modulators integrated with a 4-channel distributed Bragg reflector laser array,” Semicond. Sci. Technol. 23(5), 055012 (2008).
[Crossref]

J. S. Sim, S. B. Kim, Y. H. Kwon, Y. S. Baek, and S. W. Ryu, “A Four-Channel Laser Array with Four 10 Gbps Monolithic EAMs Each Integrated with a DBR Laser,” Etri. J. 28(4), 533–536 (2006).
[Crossref]

Bornholdt, C.

J. Kreissl, C. Bornholdt, T. Gaertner, L. Moerl, G. Przyrembel, and W. Rehbein, “Flip-Chip Compatible Electroabsorption Modulator for up to 40 Gb/s, Integrated with 1.55 mu m DFB Laser and Spot-Size Expander,” IEEE J. Quantum Electron. 47(7), 1036–1042 (2011).
[Crossref]

Bowers, J. E.

Brenot, R.

M. N. Ngo, H. T. Nguyen, C. Gosset, D. Erasme, Q. Deniel, N. Genay, R. Guillamet, N. Lagay, J. Decobert, F. Poingt, and R. Brenot, “Electroabsorption Modulated Laser Integrated with a Semiconductor Optical Amplifier for 100-km 10.3 Gb/s Dispersion-Penalty-Free Transmission,” IEEE J. Lightw. Technol. 31(2), 232–238 (2013).
[Crossref]

Chen, W. X.

Cheng, Y. B.

Y. B. Cheng, J. Q. Pan, Y. Wang, F. Zhou, B. J. Wang, L. J. Zhao, H. L. Zhu, and W. Wang, “40-Gbit/s low chirp electroabsorption modulator integrated with DFB laser,” IEEE Photon. Technol. Lett. 21(6), 356–358 (2009).
[Crossref]

Y. B. Cheng, J. Q. Pan, S. Liang, W. Feng, Z. Y. Liao, F. Zhou, B. J. Wang, L. J. Zhao, H. L. Zhu, and W. Wang, “Butt-coupled MOVPE growth for high-performance electro-absorption modulator integrated with a DFB laser,” J. Cryst. Growth 308(2), 297–301 (2007).
[Crossref]

Decobert, J.

M. N. Ngo, H. T. Nguyen, C. Gosset, D. Erasme, Q. Deniel, N. Genay, R. Guillamet, N. Lagay, J. Decobert, F. Poingt, and R. Brenot, “Electroabsorption Modulated Laser Integrated with a Semiconductor Optical Amplifier for 100-km 10.3 Gb/s Dispersion-Penalty-Free Transmission,” IEEE J. Lightw. Technol. 31(2), 232–238 (2013).
[Crossref]

Deniel, Q.

M. N. Ngo, H. T. Nguyen, C. Gosset, D. Erasme, Q. Deniel, N. Genay, R. Guillamet, N. Lagay, J. Decobert, F. Poingt, and R. Brenot, “Electroabsorption Modulated Laser Integrated with a Semiconductor Optical Amplifier for 100-km 10.3 Gb/s Dispersion-Penalty-Free Transmission,” IEEE J. Lightw. Technol. 31(2), 232–238 (2013).
[Crossref]

Devaux, F.

F. Devaux, Y. Sorel, and J. F. Kerdiles, “Simple measurement of fiber dispersion and of chirp parameter of intensity modulated light emitter,” J. Lightwave Technol. 11(12), 1937–1940 (1993).
[Crossref]

Emanuel, M. A.

D. Ton, G. W. Yoffe, J. F. Heanue, M. A. Emanuel, S. Y. Zou, J. Kubicky, B. Pezeshki, and E. C. Vail, “2.5-Gb/s modulated widely-tunable laser using an electroabsorption modulated DFB array and MEMS selection,” IEEE Photon. Technol. Lett. 16(6), 1573–1575 (2004).
[Crossref]

Erasme, D.

M. N. Ngo, H. T. Nguyen, C. Gosset, D. Erasme, Q. Deniel, N. Genay, R. Guillamet, N. Lagay, J. Decobert, F. Poingt, and R. Brenot, “Electroabsorption Modulated Laser Integrated with a Semiconductor Optical Amplifier for 100-km 10.3 Gb/s Dispersion-Penalty-Free Transmission,” IEEE J. Lightw. Technol. 31(2), 232–238 (2013).
[Crossref]

Feng, W.

Y. B. Cheng, J. Q. Pan, S. Liang, W. Feng, Z. Y. Liao, F. Zhou, B. J. Wang, L. J. Zhao, H. L. Zhu, and W. Wang, “Butt-coupled MOVPE growth for high-performance electro-absorption modulator integrated with a DFB laser,” J. Cryst. Growth 308(2), 297–301 (2007).
[Crossref]

Fujisawa, T.

W. Kobayashi, T. Fujisawa, T. Ito, S. Kanazawa, Y. Ueda, and H. Sanjoh, “Advantages of EADFB laser for 25 Gbaud/s 4-PAM (50 Gbit/s) modulation and 10 km single-mode fibre transmission,” Electron. Lett. 50(9), 683–685 (2014).
[Crossref]

T. Fujisawa, T. Itoh, S. Kanazawa, K. Takahata, Y. Ueda, R. Iga, H. Sanjo, T. Yamanaka, M. Kotoku, and H. Ishii, “Ultracompact, 160-Gbit/s transmitter optical subassembly based on 40-Gbit/s × 4 monolithically integrated light source,” Opt. Express 21(1), 182–189 (2013).
[Crossref] [PubMed]

T. Fujisawa, S. Kanazawa, K. Takahata, W. Kobayashi, T. Tadokoro, H. Ishii, and F. Kano, “1.3-μm, 4 × 25-Gbit/s, EADFB laser array module with large-output-power and low-driving-voltage for energy-efficient 100GbE transmitter,” Opt. Express 20(1), 614–620 (2012).
[Crossref] [PubMed]

S. Kanazawa, T. Fujisawa, A. Ohki, H. Ishii, N. Nunoya, Y. Kawaguchi, N. Fujiwara, K. Takahata, R. Iga, F. Kano, and H. Oohashi, “A compact EADFB laser array module for a future 100-Gbit/s Ethernet transceiver,” IEEE J. Sel. Top. Quantum Electron. 17(5), 1191–1197 (2011).
[Crossref]

Fujiwara, N.

S. Kanazawa, T. Fujisawa, A. Ohki, H. Ishii, N. Nunoya, Y. Kawaguchi, N. Fujiwara, K. Takahata, R. Iga, F. Kano, and H. Oohashi, “A compact EADFB laser array module for a future 100-Gbit/s Ethernet transceiver,” IEEE J. Sel. Top. Quantum Electron. 17(5), 1191–1197 (2011).
[Crossref]

Gaertner, T.

J. Kreissl, C. Bornholdt, T. Gaertner, L. Moerl, G. Przyrembel, and W. Rehbein, “Flip-Chip Compatible Electroabsorption Modulator for up to 40 Gb/s, Integrated with 1.55 mu m DFB Laser and Spot-Size Expander,” IEEE J. Quantum Electron. 47(7), 1036–1042 (2011).
[Crossref]

Genay, N.

M. N. Ngo, H. T. Nguyen, C. Gosset, D. Erasme, Q. Deniel, N. Genay, R. Guillamet, N. Lagay, J. Decobert, F. Poingt, and R. Brenot, “Electroabsorption Modulated Laser Integrated with a Semiconductor Optical Amplifier for 100-km 10.3 Gb/s Dispersion-Penalty-Free Transmission,” IEEE J. Lightw. Technol. 31(2), 232–238 (2013).
[Crossref]

Gerlach, P.

B. K. Saravanan, T. Wenger, C. Hanke, P. Gerlach, M. Peschke, and R. Macaluso, “Wide temperature operation of 40-Gb/s 1550-nm electroabsorption modulated lasers,” IEEE Photon. Technol. Lett. 18(7), 862–864 (2006).
[Crossref]

Gosset, C.

M. N. Ngo, H. T. Nguyen, C. Gosset, D. Erasme, Q. Deniel, N. Genay, R. Guillamet, N. Lagay, J. Decobert, F. Poingt, and R. Brenot, “Electroabsorption Modulated Laser Integrated with a Semiconductor Optical Amplifier for 100-km 10.3 Gb/s Dispersion-Penalty-Free Transmission,” IEEE J. Lightw. Technol. 31(2), 232–238 (2013).
[Crossref]

Guillamet, R.

M. N. Ngo, H. T. Nguyen, C. Gosset, D. Erasme, Q. Deniel, N. Genay, R. Guillamet, N. Lagay, J. Decobert, F. Poingt, and R. Brenot, “Electroabsorption Modulated Laser Integrated with a Semiconductor Optical Amplifier for 100-km 10.3 Gb/s Dispersion-Penalty-Free Transmission,” IEEE J. Lightw. Technol. 31(2), 232–238 (2013).
[Crossref]

Hanke, C.

B. K. Saravanan, T. Wenger, C. Hanke, P. Gerlach, M. Peschke, and R. Macaluso, “Wide temperature operation of 40-Gb/s 1550-nm electroabsorption modulated lasers,” IEEE Photon. Technol. Lett. 18(7), 862–864 (2006).
[Crossref]

Hayashi, H.

S. Makino, K. Shinoda, T. Kitatani, H. Hayashi, T. Shiota, S. Tanaka, and et al.., “High-Speed EA-DFB Laser for 40-G and 100-Gbps,” IEICE.T.Electron.  E92c(7), 937–941 (2009).

Heanue, J. F.

D. Ton, G. W. Yoffe, J. F. Heanue, M. A. Emanuel, S. Y. Zou, J. Kubicky, B. Pezeshki, and E. C. Vail, “2.5-Gb/s modulated widely-tunable laser using an electroabsorption modulated DFB array and MEMS selection,” IEEE Photon. Technol. Lett. 16(6), 1573–1575 (2004).
[Crossref]

Hong, J.

J. Hong, W. P. Huang, T. Makino, and G. Pakulski, “Static and Dynamic Characteristics of MQW DFB Lasers with Varying Ridge Width,” IEE Proc., Optoelectron. 141(5), 303–310 (1994).
[Crossref]

Huang, W. P.

J. Hong, W. P. Huang, T. Makino, and G. Pakulski, “Static and Dynamic Characteristics of MQW DFB Lasers with Varying Ridge Width,” IEE Proc., Optoelectron. 141(5), 303–310 (1994).
[Crossref]

Iga, R.

T. Fujisawa, T. Itoh, S. Kanazawa, K. Takahata, Y. Ueda, R. Iga, H. Sanjo, T. Yamanaka, M. Kotoku, and H. Ishii, “Ultracompact, 160-Gbit/s transmitter optical subassembly based on 40-Gbit/s × 4 monolithically integrated light source,” Opt. Express 21(1), 182–189 (2013).
[Crossref] [PubMed]

S. Kanazawa, T. Fujisawa, A. Ohki, H. Ishii, N. Nunoya, Y. Kawaguchi, N. Fujiwara, K. Takahata, R. Iga, F. Kano, and H. Oohashi, “A compact EADFB laser array module for a future 100-Gbit/s Ethernet transceiver,” IEEE J. Sel. Top. Quantum Electron. 17(5), 1191–1197 (2011).
[Crossref]

Ishii, H.

Ito, T.

W. Kobayashi, T. Fujisawa, T. Ito, S. Kanazawa, Y. Ueda, and H. Sanjoh, “Advantages of EADFB laser for 25 Gbaud/s 4-PAM (50 Gbit/s) modulation and 10 km single-mode fibre transmission,” Electron. Lett. 50(9), 683–685 (2014).
[Crossref]

Itoh, T.

Jain, S. R.

Kan, Q.

Kanazawa, S.

W. Kobayashi, T. Fujisawa, T. Ito, S. Kanazawa, Y. Ueda, and H. Sanjoh, “Advantages of EADFB laser for 25 Gbaud/s 4-PAM (50 Gbit/s) modulation and 10 km single-mode fibre transmission,” Electron. Lett. 50(9), 683–685 (2014).
[Crossref]

T. Fujisawa, T. Itoh, S. Kanazawa, K. Takahata, Y. Ueda, R. Iga, H. Sanjo, T. Yamanaka, M. Kotoku, and H. Ishii, “Ultracompact, 160-Gbit/s transmitter optical subassembly based on 40-Gbit/s × 4 monolithically integrated light source,” Opt. Express 21(1), 182–189 (2013).
[Crossref] [PubMed]

T. Fujisawa, S. Kanazawa, K. Takahata, W. Kobayashi, T. Tadokoro, H. Ishii, and F. Kano, “1.3-μm, 4 × 25-Gbit/s, EADFB laser array module with large-output-power and low-driving-voltage for energy-efficient 100GbE transmitter,” Opt. Express 20(1), 614–620 (2012).
[Crossref] [PubMed]

S. Kanazawa, T. Fujisawa, A. Ohki, H. Ishii, N. Nunoya, Y. Kawaguchi, N. Fujiwara, K. Takahata, R. Iga, F. Kano, and H. Oohashi, “A compact EADFB laser array module for a future 100-Gbit/s Ethernet transceiver,” IEEE J. Sel. Top. Quantum Electron. 17(5), 1191–1197 (2011).
[Crossref]

Kano, F.

T. Fujisawa, S. Kanazawa, K. Takahata, W. Kobayashi, T. Tadokoro, H. Ishii, and F. Kano, “1.3-μm, 4 × 25-Gbit/s, EADFB laser array module with large-output-power and low-driving-voltage for energy-efficient 100GbE transmitter,” Opt. Express 20(1), 614–620 (2012).
[Crossref] [PubMed]

S. Kanazawa, T. Fujisawa, A. Ohki, H. Ishii, N. Nunoya, Y. Kawaguchi, N. Fujiwara, K. Takahata, R. Iga, F. Kano, and H. Oohashi, “A compact EADFB laser array module for a future 100-Gbit/s Ethernet transceiver,” IEEE J. Sel. Top. Quantum Electron. 17(5), 1191–1197 (2011).
[Crossref]

Kawaguchi, Y.

S. Kanazawa, T. Fujisawa, A. Ohki, H. Ishii, N. Nunoya, Y. Kawaguchi, N. Fujiwara, K. Takahata, R. Iga, F. Kano, and H. Oohashi, “A compact EADFB laser array module for a future 100-Gbit/s Ethernet transceiver,” IEEE J. Sel. Top. Quantum Electron. 17(5), 1191–1197 (2011).
[Crossref]

Kerdiles, J. F.

F. Devaux, Y. Sorel, and J. F. Kerdiles, “Simple measurement of fiber dispersion and of chirp parameter of intensity modulated light emitter,” J. Lightwave Technol. 11(12), 1937–1940 (1993).
[Crossref]

Kim, S. B.

S. W. Ryu, J. S. Sim, Y. H. Kwan, S. B. Kim, and Y. S. Baek, “10 Gbps transmission of electroabsorption modulators integrated with a 4-channel distributed Bragg reflector laser array,” Semicond. Sci. Technol. 23(5), 055012 (2008).
[Crossref]

J. S. Sim, S. B. Kim, Y. H. Kwon, Y. S. Baek, and S. W. Ryu, “A Four-Channel Laser Array with Four 10 Gbps Monolithic EAMs Each Integrated with a DBR Laser,” Etri. J. 28(4), 533–536 (2006).
[Crossref]

Kitatani, T.

S. Makino, K. Shinoda, T. Kitatani, H. Hayashi, T. Shiota, S. Tanaka, and et al.., “High-Speed EA-DFB Laser for 40-G and 100-Gbps,” IEICE.T.Electron.  E92c(7), 937–941 (2009).

Kobayashi, W.

W. Kobayashi, T. Fujisawa, T. Ito, S. Kanazawa, Y. Ueda, and H. Sanjoh, “Advantages of EADFB laser for 25 Gbaud/s 4-PAM (50 Gbit/s) modulation and 10 km single-mode fibre transmission,” Electron. Lett. 50(9), 683–685 (2014).
[Crossref]

T. Fujisawa, S. Kanazawa, K. Takahata, W. Kobayashi, T. Tadokoro, H. Ishii, and F. Kano, “1.3-μm, 4 × 25-Gbit/s, EADFB laser array module with large-output-power and low-driving-voltage for energy-efficient 100GbE transmitter,” Opt. Express 20(1), 614–620 (2012).
[Crossref] [PubMed]

Kotoku, M.

Kreissl, J.

J. Kreissl, C. Bornholdt, T. Gaertner, L. Moerl, G. Przyrembel, and W. Rehbein, “Flip-Chip Compatible Electroabsorption Modulator for up to 40 Gb/s, Integrated with 1.55 mu m DFB Laser and Spot-Size Expander,” IEEE J. Quantum Electron. 47(7), 1036–1042 (2011).
[Crossref]

Kubicky, J.

D. Ton, G. W. Yoffe, J. F. Heanue, M. A. Emanuel, S. Y. Zou, J. Kubicky, B. Pezeshki, and E. C. Vail, “2.5-Gb/s modulated widely-tunable laser using an electroabsorption modulated DFB array and MEMS selection,” IEEE Photon. Technol. Lett. 16(6), 1573–1575 (2004).
[Crossref]

Kurczveil, G.

Kwan, Y. H.

S. W. Ryu, J. S. Sim, Y. H. Kwan, S. B. Kim, and Y. S. Baek, “10 Gbps transmission of electroabsorption modulators integrated with a 4-channel distributed Bragg reflector laser array,” Semicond. Sci. Technol. 23(5), 055012 (2008).
[Crossref]

Kwon, Y. H.

J. S. Sim, S. B. Kim, Y. H. Kwon, Y. S. Baek, and S. W. Ryu, “A Four-Channel Laser Array with Four 10 Gbps Monolithic EAMs Each Integrated with a DBR Laser,” Etri. J. 28(4), 533–536 (2006).
[Crossref]

Lagay, N.

M. N. Ngo, H. T. Nguyen, C. Gosset, D. Erasme, Q. Deniel, N. Genay, R. Guillamet, N. Lagay, J. Decobert, F. Poingt, and R. Brenot, “Electroabsorption Modulated Laser Integrated with a Semiconductor Optical Amplifier for 100-km 10.3 Gb/s Dispersion-Penalty-Free Transmission,” IEEE J. Lightw. Technol. 31(2), 232–238 (2013).
[Crossref]

Li, Y. P.

Liang, S.

Y. B. Cheng, J. Q. Pan, S. Liang, W. Feng, Z. Y. Liao, F. Zhou, B. J. Wang, L. J. Zhao, H. L. Zhu, and W. Wang, “Butt-coupled MOVPE growth for high-performance electro-absorption modulator integrated with a DFB laser,” J. Cryst. Growth 308(2), 297–301 (2007).
[Crossref]

Liao, Z. Y.

Y. B. Cheng, J. Q. Pan, S. Liang, W. Feng, Z. Y. Liao, F. Zhou, B. J. Wang, L. J. Zhao, H. L. Zhu, and W. Wang, “Butt-coupled MOVPE growth for high-performance electro-absorption modulator integrated with a DFB laser,” J. Cryst. Growth 308(2), 297–301 (2007).
[Crossref]

Macaluso, R.

B. K. Saravanan, T. Wenger, C. Hanke, P. Gerlach, M. Peschke, and R. Macaluso, “Wide temperature operation of 40-Gb/s 1550-nm electroabsorption modulated lasers,” IEEE Photon. Technol. Lett. 18(7), 862–864 (2006).
[Crossref]

Makino, S.

S. Makino, K. Shinoda, T. Kitatani, H. Hayashi, T. Shiota, S. Tanaka, and et al.., “High-Speed EA-DFB Laser for 40-G and 100-Gbps,” IEICE.T.Electron.  E92c(7), 937–941 (2009).

Makino, T.

J. Hong, W. P. Huang, T. Makino, and G. Pakulski, “Static and Dynamic Characteristics of MQW DFB Lasers with Varying Ridge Width,” IEE Proc., Optoelectron. 141(5), 303–310 (1994).
[Crossref]

Moerl, L.

J. Kreissl, C. Bornholdt, T. Gaertner, L. Moerl, G. Przyrembel, and W. Rehbein, “Flip-Chip Compatible Electroabsorption Modulator for up to 40 Gb/s, Integrated with 1.55 mu m DFB Laser and Spot-Size Expander,” IEEE J. Quantum Electron. 47(7), 1036–1042 (2011).
[Crossref]

Nakano, Y.

Y. Nakano and K. Tada, “Analysis, design, and fabrication of GaAlAs/GaAs DFB lasers with modulated stripe width structure for complete single longitudinal mode oscillation,” IEEE J. Quantum Electron. 24(10), 2017–2033 (1988).
[Crossref]

Ngo, M. N.

M. N. Ngo, H. T. Nguyen, C. Gosset, D. Erasme, Q. Deniel, N. Genay, R. Guillamet, N. Lagay, J. Decobert, F. Poingt, and R. Brenot, “Electroabsorption Modulated Laser Integrated with a Semiconductor Optical Amplifier for 100-km 10.3 Gb/s Dispersion-Penalty-Free Transmission,” IEEE J. Lightw. Technol. 31(2), 232–238 (2013).
[Crossref]

Nguyen, H. T.

M. N. Ngo, H. T. Nguyen, C. Gosset, D. Erasme, Q. Deniel, N. Genay, R. Guillamet, N. Lagay, J. Decobert, F. Poingt, and R. Brenot, “Electroabsorption Modulated Laser Integrated with a Semiconductor Optical Amplifier for 100-km 10.3 Gb/s Dispersion-Penalty-Free Transmission,” IEEE J. Lightw. Technol. 31(2), 232–238 (2013).
[Crossref]

Nunoya, N.

S. Kanazawa, T. Fujisawa, A. Ohki, H. Ishii, N. Nunoya, Y. Kawaguchi, N. Fujiwara, K. Takahata, R. Iga, F. Kano, and H. Oohashi, “A compact EADFB laser array module for a future 100-Gbit/s Ethernet transceiver,” IEEE J. Sel. Top. Quantum Electron. 17(5), 1191–1197 (2011).
[Crossref]

Ohki, A.

S. Kanazawa, T. Fujisawa, A. Ohki, H. Ishii, N. Nunoya, Y. Kawaguchi, N. Fujiwara, K. Takahata, R. Iga, F. Kano, and H. Oohashi, “A compact EADFB laser array module for a future 100-Gbit/s Ethernet transceiver,” IEEE J. Sel. Top. Quantum Electron. 17(5), 1191–1197 (2011).
[Crossref]

Oohashi, H.

S. Kanazawa, T. Fujisawa, A. Ohki, H. Ishii, N. Nunoya, Y. Kawaguchi, N. Fujiwara, K. Takahata, R. Iga, F. Kano, and H. Oohashi, “A compact EADFB laser array module for a future 100-Gbit/s Ethernet transceiver,” IEEE J. Sel. Top. Quantum Electron. 17(5), 1191–1197 (2011).
[Crossref]

Pakulski, G.

J. Hong, W. P. Huang, T. Makino, and G. Pakulski, “Static and Dynamic Characteristics of MQW DFB Lasers with Varying Ridge Width,” IEE Proc., Optoelectron. 141(5), 303–310 (1994).
[Crossref]

Pan, J. Q.

L. Tao, L. J. Yuan, Y. P. Li, H. Y. Yu, B. J. Wang, Q. Kan, W. X. Chen, J. Q. Pan, G. Z. Ran, and W. Wang, “4-λ InGaAsP-Si distributed feedback evanescent lasers with varying silicon waveguide width,” Opt. Express 22(5), 5448–5454 (2014).
[Crossref] [PubMed]

Y. B. Cheng, J. Q. Pan, Y. Wang, F. Zhou, B. J. Wang, L. J. Zhao, H. L. Zhu, and W. Wang, “40-Gbit/s low chirp electroabsorption modulator integrated with DFB laser,” IEEE Photon. Technol. Lett. 21(6), 356–358 (2009).
[Crossref]

Y. B. Cheng, J. Q. Pan, S. Liang, W. Feng, Z. Y. Liao, F. Zhou, B. J. Wang, L. J. Zhao, H. L. Zhu, and W. Wang, “Butt-coupled MOVPE growth for high-performance electro-absorption modulator integrated with a DFB laser,” J. Cryst. Growth 308(2), 297–301 (2007).
[Crossref]

Peschke, M.

B. K. Saravanan, T. Wenger, C. Hanke, P. Gerlach, M. Peschke, and R. Macaluso, “Wide temperature operation of 40-Gb/s 1550-nm electroabsorption modulated lasers,” IEEE Photon. Technol. Lett. 18(7), 862–864 (2006).
[Crossref]

Pezeshki, B.

D. Ton, G. W. Yoffe, J. F. Heanue, M. A. Emanuel, S. Y. Zou, J. Kubicky, B. Pezeshki, and E. C. Vail, “2.5-Gb/s modulated widely-tunable laser using an electroabsorption modulated DFB array and MEMS selection,” IEEE Photon. Technol. Lett. 16(6), 1573–1575 (2004).
[Crossref]

Poingt, F.

M. N. Ngo, H. T. Nguyen, C. Gosset, D. Erasme, Q. Deniel, N. Genay, R. Guillamet, N. Lagay, J. Decobert, F. Poingt, and R. Brenot, “Electroabsorption Modulated Laser Integrated with a Semiconductor Optical Amplifier for 100-km 10.3 Gb/s Dispersion-Penalty-Free Transmission,” IEEE J. Lightw. Technol. 31(2), 232–238 (2013).
[Crossref]

Przyrembel, G.

J. Kreissl, C. Bornholdt, T. Gaertner, L. Moerl, G. Przyrembel, and W. Rehbein, “Flip-Chip Compatible Electroabsorption Modulator for up to 40 Gb/s, Integrated with 1.55 mu m DFB Laser and Spot-Size Expander,” IEEE J. Quantum Electron. 47(7), 1036–1042 (2011).
[Crossref]

Ran, G. Z.

Rehbein, W.

J. Kreissl, C. Bornholdt, T. Gaertner, L. Moerl, G. Przyrembel, and W. Rehbein, “Flip-Chip Compatible Electroabsorption Modulator for up to 40 Gb/s, Integrated with 1.55 mu m DFB Laser and Spot-Size Expander,” IEEE J. Quantum Electron. 47(7), 1036–1042 (2011).
[Crossref]

Ryu, S. W.

S. W. Ryu, J. S. Sim, Y. H. Kwan, S. B. Kim, and Y. S. Baek, “10 Gbps transmission of electroabsorption modulators integrated with a 4-channel distributed Bragg reflector laser array,” Semicond. Sci. Technol. 23(5), 055012 (2008).
[Crossref]

J. S. Sim, S. B. Kim, Y. H. Kwon, Y. S. Baek, and S. W. Ryu, “A Four-Channel Laser Array with Four 10 Gbps Monolithic EAMs Each Integrated with a DBR Laser,” Etri. J. 28(4), 533–536 (2006).
[Crossref]

Sanjo, H.

Sanjoh, H.

W. Kobayashi, T. Fujisawa, T. Ito, S. Kanazawa, Y. Ueda, and H. Sanjoh, “Advantages of EADFB laser for 25 Gbaud/s 4-PAM (50 Gbit/s) modulation and 10 km single-mode fibre transmission,” Electron. Lett. 50(9), 683–685 (2014).
[Crossref]

Saravanan, B. K.

B. K. Saravanan, T. Wenger, C. Hanke, P. Gerlach, M. Peschke, and R. Macaluso, “Wide temperature operation of 40-Gb/s 1550-nm electroabsorption modulated lasers,” IEEE Photon. Technol. Lett. 18(7), 862–864 (2006).
[Crossref]

Shinoda, K.

S. Makino, K. Shinoda, T. Kitatani, H. Hayashi, T. Shiota, S. Tanaka, and et al.., “High-Speed EA-DFB Laser for 40-G and 100-Gbps,” IEICE.T.Electron.  E92c(7), 937–941 (2009).

Shiota, T.

S. Makino, K. Shinoda, T. Kitatani, H. Hayashi, T. Shiota, S. Tanaka, and et al.., “High-Speed EA-DFB Laser for 40-G and 100-Gbps,” IEICE.T.Electron.  E92c(7), 937–941 (2009).

Sim, J. S.

S. W. Ryu, J. S. Sim, Y. H. Kwan, S. B. Kim, and Y. S. Baek, “10 Gbps transmission of electroabsorption modulators integrated with a 4-channel distributed Bragg reflector laser array,” Semicond. Sci. Technol. 23(5), 055012 (2008).
[Crossref]

J. S. Sim, S. B. Kim, Y. H. Kwon, Y. S. Baek, and S. W. Ryu, “A Four-Channel Laser Array with Four 10 Gbps Monolithic EAMs Each Integrated with a DBR Laser,” Etri. J. 28(4), 533–536 (2006).
[Crossref]

Sorel, Y.

F. Devaux, Y. Sorel, and J. F. Kerdiles, “Simple measurement of fiber dispersion and of chirp parameter of intensity modulated light emitter,” J. Lightwave Technol. 11(12), 1937–1940 (1993).
[Crossref]

Sysak, M. N.

Tada, K.

Y. Nakano and K. Tada, “Analysis, design, and fabrication of GaAlAs/GaAs DFB lasers with modulated stripe width structure for complete single longitudinal mode oscillation,” IEEE J. Quantum Electron. 24(10), 2017–2033 (1988).
[Crossref]

Tadokoro, T.

Takahata, K.

Tanaka, S.

S. Makino, K. Shinoda, T. Kitatani, H. Hayashi, T. Shiota, S. Tanaka, and et al.., “High-Speed EA-DFB Laser for 40-G and 100-Gbps,” IEICE.T.Electron.  E92c(7), 937–941 (2009).

Tao, L.

Ton, D.

D. Ton, G. W. Yoffe, J. F. Heanue, M. A. Emanuel, S. Y. Zou, J. Kubicky, B. Pezeshki, and E. C. Vail, “2.5-Gb/s modulated widely-tunable laser using an electroabsorption modulated DFB array and MEMS selection,” IEEE Photon. Technol. Lett. 16(6), 1573–1575 (2004).
[Crossref]

Ueda, Y.

W. Kobayashi, T. Fujisawa, T. Ito, S. Kanazawa, Y. Ueda, and H. Sanjoh, “Advantages of EADFB laser for 25 Gbaud/s 4-PAM (50 Gbit/s) modulation and 10 km single-mode fibre transmission,” Electron. Lett. 50(9), 683–685 (2014).
[Crossref]

T. Fujisawa, T. Itoh, S. Kanazawa, K. Takahata, Y. Ueda, R. Iga, H. Sanjo, T. Yamanaka, M. Kotoku, and H. Ishii, “Ultracompact, 160-Gbit/s transmitter optical subassembly based on 40-Gbit/s × 4 monolithically integrated light source,” Opt. Express 21(1), 182–189 (2013).
[Crossref] [PubMed]

Vail, E. C.

D. Ton, G. W. Yoffe, J. F. Heanue, M. A. Emanuel, S. Y. Zou, J. Kubicky, B. Pezeshki, and E. C. Vail, “2.5-Gb/s modulated widely-tunable laser using an electroabsorption modulated DFB array and MEMS selection,” IEEE Photon. Technol. Lett. 16(6), 1573–1575 (2004).
[Crossref]

Wang, B. J.

L. Tao, L. J. Yuan, Y. P. Li, H. Y. Yu, B. J. Wang, Q. Kan, W. X. Chen, J. Q. Pan, G. Z. Ran, and W. Wang, “4-λ InGaAsP-Si distributed feedback evanescent lasers with varying silicon waveguide width,” Opt. Express 22(5), 5448–5454 (2014).
[Crossref] [PubMed]

Y. B. Cheng, J. Q. Pan, Y. Wang, F. Zhou, B. J. Wang, L. J. Zhao, H. L. Zhu, and W. Wang, “40-Gbit/s low chirp electroabsorption modulator integrated with DFB laser,” IEEE Photon. Technol. Lett. 21(6), 356–358 (2009).
[Crossref]

Y. B. Cheng, J. Q. Pan, S. Liang, W. Feng, Z. Y. Liao, F. Zhou, B. J. Wang, L. J. Zhao, H. L. Zhu, and W. Wang, “Butt-coupled MOVPE growth for high-performance electro-absorption modulator integrated with a DFB laser,” J. Cryst. Growth 308(2), 297–301 (2007).
[Crossref]

Wang, W.

L. Tao, L. J. Yuan, Y. P. Li, H. Y. Yu, B. J. Wang, Q. Kan, W. X. Chen, J. Q. Pan, G. Z. Ran, and W. Wang, “4-λ InGaAsP-Si distributed feedback evanescent lasers with varying silicon waveguide width,” Opt. Express 22(5), 5448–5454 (2014).
[Crossref] [PubMed]

Y. B. Cheng, J. Q. Pan, Y. Wang, F. Zhou, B. J. Wang, L. J. Zhao, H. L. Zhu, and W. Wang, “40-Gbit/s low chirp electroabsorption modulator integrated with DFB laser,” IEEE Photon. Technol. Lett. 21(6), 356–358 (2009).
[Crossref]

Y. B. Cheng, J. Q. Pan, S. Liang, W. Feng, Z. Y. Liao, F. Zhou, B. J. Wang, L. J. Zhao, H. L. Zhu, and W. Wang, “Butt-coupled MOVPE growth for high-performance electro-absorption modulator integrated with a DFB laser,” J. Cryst. Growth 308(2), 297–301 (2007).
[Crossref]

Wang, Y.

Y. B. Cheng, J. Q. Pan, Y. Wang, F. Zhou, B. J. Wang, L. J. Zhao, H. L. Zhu, and W. Wang, “40-Gbit/s low chirp electroabsorption modulator integrated with DFB laser,” IEEE Photon. Technol. Lett. 21(6), 356–358 (2009).
[Crossref]

Wenger, T.

B. K. Saravanan, T. Wenger, C. Hanke, P. Gerlach, M. Peschke, and R. Macaluso, “Wide temperature operation of 40-Gb/s 1550-nm electroabsorption modulated lasers,” IEEE Photon. Technol. Lett. 18(7), 862–864 (2006).
[Crossref]

Yamanaka, T.

Yoffe, G. W.

D. Ton, G. W. Yoffe, J. F. Heanue, M. A. Emanuel, S. Y. Zou, J. Kubicky, B. Pezeshki, and E. C. Vail, “2.5-Gb/s modulated widely-tunable laser using an electroabsorption modulated DFB array and MEMS selection,” IEEE Photon. Technol. Lett. 16(6), 1573–1575 (2004).
[Crossref]

Yu, H. Y.

Yuan, L. J.

Zhao, L. J.

Y. B. Cheng, J. Q. Pan, Y. Wang, F. Zhou, B. J. Wang, L. J. Zhao, H. L. Zhu, and W. Wang, “40-Gbit/s low chirp electroabsorption modulator integrated with DFB laser,” IEEE Photon. Technol. Lett. 21(6), 356–358 (2009).
[Crossref]

Y. B. Cheng, J. Q. Pan, S. Liang, W. Feng, Z. Y. Liao, F. Zhou, B. J. Wang, L. J. Zhao, H. L. Zhu, and W. Wang, “Butt-coupled MOVPE growth for high-performance electro-absorption modulator integrated with a DFB laser,” J. Cryst. Growth 308(2), 297–301 (2007).
[Crossref]

Zhou, F.

Y. B. Cheng, J. Q. Pan, Y. Wang, F. Zhou, B. J. Wang, L. J. Zhao, H. L. Zhu, and W. Wang, “40-Gbit/s low chirp electroabsorption modulator integrated with DFB laser,” IEEE Photon. Technol. Lett. 21(6), 356–358 (2009).
[Crossref]

Y. B. Cheng, J. Q. Pan, S. Liang, W. Feng, Z. Y. Liao, F. Zhou, B. J. Wang, L. J. Zhao, H. L. Zhu, and W. Wang, “Butt-coupled MOVPE growth for high-performance electro-absorption modulator integrated with a DFB laser,” J. Cryst. Growth 308(2), 297–301 (2007).
[Crossref]

Zhu, H. L.

Y. B. Cheng, J. Q. Pan, Y. Wang, F. Zhou, B. J. Wang, L. J. Zhao, H. L. Zhu, and W. Wang, “40-Gbit/s low chirp electroabsorption modulator integrated with DFB laser,” IEEE Photon. Technol. Lett. 21(6), 356–358 (2009).
[Crossref]

Y. B. Cheng, J. Q. Pan, S. Liang, W. Feng, Z. Y. Liao, F. Zhou, B. J. Wang, L. J. Zhao, H. L. Zhu, and W. Wang, “Butt-coupled MOVPE growth for high-performance electro-absorption modulator integrated with a DFB laser,” J. Cryst. Growth 308(2), 297–301 (2007).
[Crossref]

Zou, S. Y.

D. Ton, G. W. Yoffe, J. F. Heanue, M. A. Emanuel, S. Y. Zou, J. Kubicky, B. Pezeshki, and E. C. Vail, “2.5-Gb/s modulated widely-tunable laser using an electroabsorption modulated DFB array and MEMS selection,” IEEE Photon. Technol. Lett. 16(6), 1573–1575 (2004).
[Crossref]

Electron. Lett. (1)

W. Kobayashi, T. Fujisawa, T. Ito, S. Kanazawa, Y. Ueda, and H. Sanjoh, “Advantages of EADFB laser for 25 Gbaud/s 4-PAM (50 Gbit/s) modulation and 10 km single-mode fibre transmission,” Electron. Lett. 50(9), 683–685 (2014).
[Crossref]

Etri. J. (1)

J. S. Sim, S. B. Kim, Y. H. Kwon, Y. S. Baek, and S. W. Ryu, “A Four-Channel Laser Array with Four 10 Gbps Monolithic EAMs Each Integrated with a DBR Laser,” Etri. J. 28(4), 533–536 (2006).
[Crossref]

IEE Proc., Optoelectron. (1)

J. Hong, W. P. Huang, T. Makino, and G. Pakulski, “Static and Dynamic Characteristics of MQW DFB Lasers with Varying Ridge Width,” IEE Proc., Optoelectron. 141(5), 303–310 (1994).
[Crossref]

IEEE J. Lightw. Technol. (1)

M. N. Ngo, H. T. Nguyen, C. Gosset, D. Erasme, Q. Deniel, N. Genay, R. Guillamet, N. Lagay, J. Decobert, F. Poingt, and R. Brenot, “Electroabsorption Modulated Laser Integrated with a Semiconductor Optical Amplifier for 100-km 10.3 Gb/s Dispersion-Penalty-Free Transmission,” IEEE J. Lightw. Technol. 31(2), 232–238 (2013).
[Crossref]

IEEE J. Quantum Electron. (2)

J. Kreissl, C. Bornholdt, T. Gaertner, L. Moerl, G. Przyrembel, and W. Rehbein, “Flip-Chip Compatible Electroabsorption Modulator for up to 40 Gb/s, Integrated with 1.55 mu m DFB Laser and Spot-Size Expander,” IEEE J. Quantum Electron. 47(7), 1036–1042 (2011).
[Crossref]

Y. Nakano and K. Tada, “Analysis, design, and fabrication of GaAlAs/GaAs DFB lasers with modulated stripe width structure for complete single longitudinal mode oscillation,” IEEE J. Quantum Electron. 24(10), 2017–2033 (1988).
[Crossref]

IEEE J. Sel. Top. Quantum Electron. (1)

S. Kanazawa, T. Fujisawa, A. Ohki, H. Ishii, N. Nunoya, Y. Kawaguchi, N. Fujiwara, K. Takahata, R. Iga, F. Kano, and H. Oohashi, “A compact EADFB laser array module for a future 100-Gbit/s Ethernet transceiver,” IEEE J. Sel. Top. Quantum Electron. 17(5), 1191–1197 (2011).
[Crossref]

IEEE Photon. Technol. Lett. (3)

Y. B. Cheng, J. Q. Pan, Y. Wang, F. Zhou, B. J. Wang, L. J. Zhao, H. L. Zhu, and W. Wang, “40-Gbit/s low chirp electroabsorption modulator integrated with DFB laser,” IEEE Photon. Technol. Lett. 21(6), 356–358 (2009).
[Crossref]

D. Ton, G. W. Yoffe, J. F. Heanue, M. A. Emanuel, S. Y. Zou, J. Kubicky, B. Pezeshki, and E. C. Vail, “2.5-Gb/s modulated widely-tunable laser using an electroabsorption modulated DFB array and MEMS selection,” IEEE Photon. Technol. Lett. 16(6), 1573–1575 (2004).
[Crossref]

B. K. Saravanan, T. Wenger, C. Hanke, P. Gerlach, M. Peschke, and R. Macaluso, “Wide temperature operation of 40-Gb/s 1550-nm electroabsorption modulated lasers,” IEEE Photon. Technol. Lett. 18(7), 862–864 (2006).
[Crossref]

IEICE.T.Electron (1)

S. Makino, K. Shinoda, T. Kitatani, H. Hayashi, T. Shiota, S. Tanaka, and et al.., “High-Speed EA-DFB Laser for 40-G and 100-Gbps,” IEICE.T.Electron.  E92c(7), 937–941 (2009).

J. Cryst. Growth (1)

Y. B. Cheng, J. Q. Pan, S. Liang, W. Feng, Z. Y. Liao, F. Zhou, B. J. Wang, L. J. Zhao, H. L. Zhu, and W. Wang, “Butt-coupled MOVPE growth for high-performance electro-absorption modulator integrated with a DFB laser,” J. Cryst. Growth 308(2), 297–301 (2007).
[Crossref]

J. Lightwave Technol. (1)

F. Devaux, Y. Sorel, and J. F. Kerdiles, “Simple measurement of fiber dispersion and of chirp parameter of intensity modulated light emitter,” J. Lightwave Technol. 11(12), 1937–1940 (1993).
[Crossref]

Opt. Express (4)

Semicond. Sci. Technol. (1)

S. W. Ryu, J. S. Sim, Y. H. Kwan, S. B. Kim, and Y. S. Baek, “10 Gbps transmission of electroabsorption modulators integrated with a 4-channel distributed Bragg reflector laser array,” Semicond. Sci. Technol. 23(5), 055012 (2008).
[Crossref]

Other (1)

IEEE 802.3ba 40 Gb/s and 100 Gb/s Ethernet Task Force Public Area; http://www.ieee802.org/3/ba/index.html .

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Figures (5)

Fig. 1
Fig. 1 Typical light output power versus current curve of a typical chip of EML array at the temperature of 25°C under CW condition.
Fig. 2
Fig. 2 Typical lasing spectrum of the EML chip at a driving current of 65mA.
Fig. 3
Fig. 3 Measured extinction behavior of the integrated light source with 170µm EA modulator section using an integrating sphere.
Fig. 4
Fig. 4 Measured E/O responses of a typical EML (channel 2) at various reverse bias voltages.
Fig. 5
Fig. 5 Measured reverse bias voltage dependence of the α parameter for a typical EML (channel 2).

Equations (1)

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2 n e f f Λ = m λ B

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