Abstract

Longitudinal mode competition in (Al,In)GaN laser diodes at λ = 445nm and 515 nm with mode competition frequencies from 10 MHz to 150 MHz is observed. Up to two dozen lasing modes oscillate with the lasing mode rolling from the short wavelength edge to the long wavelength edge of the gain profile. The experimental results can be described very well with a set of multi–mode rate equations including self–, symmetric and asymmetric cross gain saturation. By tuning essential parameters of the gain saturation terms, mode competition disappears and single mode operation as well as mode clustering is found. This proves that the mechanisms of gain saturation have not only a profound impact on the complex temporal–spectral behavior but also explains mode clustering in (Al,In)GaN laser diodes, both in pulsed and continuous wave (cw) operation as a natural nonlinear effect without the necessity to add noise.

© 2014 Optical Society of America

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References

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    [Crossref]
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    [Crossref]
  52. S. Nakamura, M. Senoh, S.-I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, “Subband emissions of InGaN multi-quantum-well laser diodes under room-temperature continuous wave operation,” Appl. Phys. Lett. 70, 2753 (1997).
    [Crossref]
  53. M. Ahmed, “Longitudinal mode competition in semiconductor lasers under optical feedback: regime of short-external cavity,” Opt. Laser Technol. 41, 53–63 (2009).
    [Crossref]

2014 (3)

U. Strauß, T. Hager, G. Brüderl, T. Wurm, A. Somers, C. Eichler, C. Vierheilig, A. Löffler, J. Ristic, and A. Avramescu, “Recent advances in c-plane GaN visible lasers,” Proc. SPIE 8986, 89861L (2014).
[Crossref]

J. J. Wierer, J. Y. Tsao, and D. S. Sizov, “The potential of III-nitride laser diodes for solid-state lighting,” Phys. Status Solidi C 11(3–4), 674–677 (2014).
[Crossref]

K. Holc, G. Lükens, T. Weig, K. Köhler, J. Wagner, and U. T. Schwarz, “Gallium nitride laser diodes with integrated absorber: on the dynamics of self-pulsation,” Phys. Status Solidi C 11(3–4), 670–673 (2014).
[Crossref]

2013 (4)

M. Omori, N. Mori, and N. Dejima, “Tunable light source with GaN-based violet laser diode,” Proc. SPIE 8625, 86251A (2013).
[Crossref]

L. Ulrich, “Whiter brights with lasers,” Spectrum, IEEE 50(11), 36–56 (2013).
[Crossref]

J. J. Wierer, J. Y. Tsao, and D. S. Sizov, “Comparison between blue lasers and light-emitting diodes for future solid-state lighting,” Laser Photon. Rev. 7(6), 963–993 (2013).
[Crossref]

K. Holc, T. Weig, K. Köhler, J. Wagner, and U. T. Schwarz, “Impact of band structure and absorber dynamics on self-Q-switching in GaN-based multisection laser diodes at high reverse bias,” Appl. Phys. Express 6, 084101 (2013).
[Crossref]

2012 (7)

V. F. Olle, P. P. Vasil’ev, A. Wonfor, R. V. Penty, and I. H. White, “Ultrashort superradiant pulse generation from a GaN/InGaN heterostructure,” Opt. Express 20(7), 7035–7039 (2012).
[Crossref] [PubMed]

S. Kono, H. Watanabe, R. Koda, T. Miyajima, and M. Kuramoto, “200-fs pulse generation from a GaInN semiconductor laser diode passively mode-locked in a dispersion-compensated external cavity,” Appl. Phys. Lett. 101, 081121 (2012).
[Crossref]

R. Koda, T. Oki, S. Kono, T. Miyajima, H. Watanabe, M. Kuramoto, M. Ikeda, and H. Yokoyama, “300 W peak power picosecond optical pulse generation by blue-violet GaInN mode-locked laser diode and semiconductor optical amplifier,” Appl. Phys. Express 5, 022702 (2012).
[Crossref]

S. Takagi, Y. Enya, T. Kyono, M. Adachi, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, T. Nakamura, K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, and M. Ikeda, “High-power (over 100 mW) green laser diodes on semipolar {202̄1} GaN substrates operating at wavelengths beyond 530 nm,” Appl. Phys. Express 5, 082102 (2012).
[Crossref]

C. Vierheilig, C. Eichler, S. Tautz, A. Lell, J. Müller, F. Kopp, B. Stojetz, T. Hager, G. Brüderl, A. Avramescu, T. Lermer, J. Ristic, and U. Strauss, “Beyond blue pico laser: development of high power blue and low power direct green,” Proc. SPIE 8277, 82770K (2012).
[Crossref]

W. G. Scheibenzuber and U. T. Schwarz, “Unequal pumping of quantum wells in GaN-based laser diodes,” Appl. Phys. Express 5, 042103 (2012).
[Crossref]

I. V. Smetanin and P. P. Vasil’ev, “Enhanced longitudinal mode spacing in blue-violet InGaN semiconductor lasers,” Appl. Phys. Lett. 100, 041113 (2012).
[Crossref]

2011 (7)

W. G. Scheibenzuber, U. T. Schwarz, L. Sulmoni, J. Dorsaz, J.-F. Carlin, and N. Grandjean, “Recombination coefficients of GaN-based laser diodes,” J. Appl. Phys. 109, 093106 (2011).
[Crossref]

W. G. Scheibenzuber and U. T. Schwarz, “Fast self-heating in GaN-based laser diodes,” Appl. Phys. Lett. 98, 181110 (2011).
[Crossref]

P. Perlin, L. Marona, K. Holc, P. Wisniewski, T. Suski, M. Leszczynski, R. Czernecki, S. Najda, M. Zajac, and R. Kucharski, “InGaN laser diode mini-arrays,” Appl. Phys. Express 4, 062103 (2011).
[Crossref]

D. Ueda, K. Saito, T. Iwamura, Y. Takemoto, H. Yamatsu, T. Horigome, M. Oyamada, K. Hayashi, N. Tanabe, H. Miyamoto, A. Nakaoki, J. Horigome, H. Uchiyama, K. S. Yun, and S. Kobayashi, “Dynamic recording of 200 Gbytes in three-dimensional optical disk by a 405 nm wavelength picosecond laser,” Jap. J. Appl. Phys. 50, 032704 (2011).
[Crossref]

S. Lutgen, D. Dini, I. Pietzonka, S. Tautz, A. Breidenassel, A. Lell, A. Avramescu, C. Eichler, T. Lermer, J. Müller, G. Bruederl, A. Gomez-Iglesias, U. Strauss, W. G. Scheibenzuber, U. T. Schwarz, B. Pasenow, and S. Koch, “Recent results of blue and green InGaN laser diodes for laser projection,” Proc. SPIE 7953, 79530G (2011).
[Crossref]

W. G. Scheibenzuber, C. Hornuss, and U. T. Schwarz, “Dynamics of GaN-based laser diodes from violet to green,” Proc. SPIE 7953, 79530K (2011).
[Crossref]

T. Lermer, A. Gomez-Iglesias, M. Sabathil, J. Müller, S. Lutgen, U. Strauss, B. Pasenow, J. Hader, J. V. Moloney, S. W. Koch, W. Scheibenzuber, and U. T. Schwarz, “Gain of blue and cyan InGaN laser diodes,” Appl. Phys. Lett. 98, 021115 (2011).
[Crossref]

2010 (1)

W. G. Scheibenzuber, U. T. Schwarz, T. Lermer, S. Lutgen, and U. Strauss, “Antiguiding factor of GaN-based laser diodes from UV to green,” Appl. Phys. Lett. 97, 021102 (2010).
[Crossref]

2009 (5)

M. Ahmed, “Longitudinal mode competition in semiconductor lasers under optical feedback: regime of short-external cavity,” Opt. Laser Technol. 41, 53–63 (2009).
[Crossref]

D. Queren, A. Avramescu, G. Brüderl, A. Breidenassel, M. Schillgalies, S. Lutgen, and U. Strauß, “500 nm electrically driven InGaN based laser diodes,” Appl. Phys. Lett. 94, 081119 (2009).
[Crossref]

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm green lasing of InGaN based laser diodes on semi-polar {202̄1} free-standing GaN substrates,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

T. Miyoshi, S. Masui, T. Okada, T. Yanamoto, T. Kozaki, S.-I. Nagahama, and T. Mukai, “510–515 nm InGaN-based green laser diodes on c-plane GaN substrate,” Appl. Phys. Express 2, 062201 (2009).
[Crossref]

B. Schmidtke, H. Braun, U. T. Schwarz, D. Queren, M. Schillgalies, S. Lutgen, and U. Strauß, “Time resolved measurement of longitudinal mode competition in 405 nm (Al,In)GaN laser diodes,” Phys. Status Solidi C 6, S860–S863 (2009).
[Crossref]

2008 (1)

2006 (1)

Y. Tanguy, J. Houlihan, and G. Huyet, “Synchronization and clustering in a multimode quantum dot laser,” Phys. Rev. Lett. 96, 053902 (2006).
[Crossref] [PubMed]

2005 (2)

S. H. Park, D. Ahn, E. H. Park, T. K. Yoo, and Y. T. Lee, “Many-body optical gain and intraband relaxation time of wurtzite InGaN/GaN quantum-well lasers and comparison with experiment,” Appl. Phys. Lett. 87, 044103 (2005).
[Crossref]

C. Eichler, S. Schad, F. Scholz, D. Hofstetter, S. Miller, A. Weimar, A. Lell, and V. Härle, “Observation of temperature-independent longitudinal-mode patterns in violet-blue InGaN-based laser diodes,” IEEE Phot. Techn. Lett. 17(9), 1782 (2005).
[Crossref]

2004 (3)

U. T. Schwarz, W. Wegscheider, A. Lell, and V. Härle, “Nitride-based in-plane laser diodes with vertical current path,” Proc. SPIE 5365, 267 (2004).
[Crossref]

A. M. Yacomotti, L. Furfaro, X. Hachair, F. Pedachi, M. Giudici, J. Tredicce, J. Javaloyes, S. Balle, E. A. Viktorov, and P. Mandel, “Dynamics of multimode semiconductor lasers,” Phys. Rev. A 69(5), 053816 (2004).
[Crossref]

L. Furfaro, F. Pedachi, M. Giudici, X. Hachair, J. Tredicce, and S. Balle, “Mode-switching in semiconductor lasers,” IEEE J. Quantum Electron. 40(10), 1365 (2004).
[Crossref]

2002 (1)

M. Ahmed and M. Yamada, “Influence of instantaneous mode competition on the dynamics of semiconductor lasers,” IEEE J. Quantum Electron. 38(6), 682 (2002).
[Crossref]

2001 (2)

I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, “Band parameters for IIIV compound semiconductors and their alloys,” J. Appl. Phys. 89(11), 5815 (2001).
[Crossref]

M. Ahmed, M. Yamada, and S. Abdulrhmann, “A multimode simulation model of mode-competition low-frequency noise in semiconductor lasers,” Fluct. Noise Lett. 1(3), L163 (2001).
[Crossref]

1997 (2)

S. Nakamura, M. Senoh, S.-I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, “Subband emissions of InGaN multi-quantum-well laser diodes under room-temperature continuous wave operation,” Appl. Phys. Lett. 70, 2753 (1997).
[Crossref]

S. Nakamura, M. Senoh, S.-I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, “Longitudinal mode spectra and ultrashort pulse generation of InGaN multiquantum well structure laser diodes,” Appl. Phys. Lett. 70, 616 (1997).
[Crossref]

1996 (1)

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, “Optical gain and carrier lifetime of InGaN multi-quantum well structure laser diodes,” Appl. Phys. Lett. 69, 1568 (1996).
[Crossref]

1992 (1)

S. Inoue, H. Ohzu, S. Machida, and Y. Yamamoto, “Quantum correlation between longitudinal-mode intensities in a multimode squeezed semiconductor laser,” Phys. Rev. A 46(5), 2757 (1992).
[Crossref] [PubMed]

1990 (1)

G. P. Agrawal, “Effect of gain and index nonlinearities on single-mode dynamics in semiconductor lasers,” IEEE J. Quantum Electron. 26(11), 1901–1909 (1990).
[Crossref]

1989 (2)

M. Yamada, “Theoretical analysis of nonlinear optical phenomena taking into account the beating vibration of the electron density in semiconductor lasers,” J. Appl. Phys. 66(1), 81–89 (1989).
[Crossref]

M. Ohtsu and Y. Teramachi, “Analyses of mode partition and mode hopping in semiconductor lasers,” IEEE J. Quantum Electron. 25(1), 31 (1989).
[Crossref]

1988 (2)

N. Ogasawara and R. Ito, “Longitudinal mode competition and asymmetric gain saturation in semiconductor injection lasers. I. Experiment,” Jpn. J. Appl. Phys. 27(4), 607–614 (1988).
[Crossref]

N. Ogasawara and R. Ito, “Longitudinal mode competition and asymmetric gain saturation in semiconductor injection lasers. II. Theory,” Jpn. J. Appl. Phys. 27(4), 615–626 (1988).
[Crossref]

1987 (1)

G. P. Agrawal, “Gain nonlinearities in semiconductor lasers: theory and application to distributed feedback lasers,” IEEE J. Quantum Electron. 23(6), 860–868 (1987).
[Crossref]

1986 (1)

M. Yamada, “Theory of mode competition noise in semiconductor injection lasers,” IEEE J. Quantum Electron. 22(7), 1052 (1986).
[Crossref]

1983 (1)

M. Yamada, “Transverse and longitudinal mode control in semiconductor injection lasers,” IEEE J. Quantum Electron. 19(9), 1365 (1983).
[Crossref]

1982 (1)

H. Ishikawa, M. Yano, and M. Takusagawa, “Mechanism of asymmetric longitudinal mode competition in In-GaAsP/InP lasers,” Appl. Phys. Lett. 40, 553 (1982).
[Crossref]

Abdulrhmann, S.

M. Ahmed, M. Yamada, and S. Abdulrhmann, “A multimode simulation model of mode-competition low-frequency noise in semiconductor lasers,” Fluct. Noise Lett. 1(3), L163 (2001).
[Crossref]

Adachi, M.

S. Takagi, Y. Enya, T. Kyono, M. Adachi, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, T. Nakamura, K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, and M. Ikeda, “High-power (over 100 mW) green laser diodes on semipolar {202̄1} GaN substrates operating at wavelengths beyond 530 nm,” Appl. Phys. Express 5, 082102 (2012).
[Crossref]

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm green lasing of InGaN based laser diodes on semi-polar {202̄1} free-standing GaN substrates,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Agrawal, G. P.

G. P. Agrawal, “Effect of gain and index nonlinearities on single-mode dynamics in semiconductor lasers,” IEEE J. Quantum Electron. 26(11), 1901–1909 (1990).
[Crossref]

G. P. Agrawal, “Gain nonlinearities in semiconductor lasers: theory and application to distributed feedback lasers,” IEEE J. Quantum Electron. 23(6), 860–868 (1987).
[Crossref]

Ahmed, M.

M. Ahmed, “Longitudinal mode competition in semiconductor lasers under optical feedback: regime of short-external cavity,” Opt. Laser Technol. 41, 53–63 (2009).
[Crossref]

M. Ahmed and M. Yamada, “Influence of instantaneous mode competition on the dynamics of semiconductor lasers,” IEEE J. Quantum Electron. 38(6), 682 (2002).
[Crossref]

M. Ahmed, M. Yamada, and S. Abdulrhmann, “A multimode simulation model of mode-competition low-frequency noise in semiconductor lasers,” Fluct. Noise Lett. 1(3), L163 (2001).
[Crossref]

Ahn, D.

S. H. Park, D. Ahn, E. H. Park, T. K. Yoo, and Y. T. Lee, “Many-body optical gain and intraband relaxation time of wurtzite InGaN/GaN quantum-well lasers and comparison with experiment,” Appl. Phys. Lett. 87, 044103 (2005).
[Crossref]

Akita, K.

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm green lasing of InGaN based laser diodes on semi-polar {202̄1} free-standing GaN substrates,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Avramescu, A.

U. Strauß, T. Hager, G. Brüderl, T. Wurm, A. Somers, C. Eichler, C. Vierheilig, A. Löffler, J. Ristic, and A. Avramescu, “Recent advances in c-plane GaN visible lasers,” Proc. SPIE 8986, 89861L (2014).
[Crossref]

C. Vierheilig, C. Eichler, S. Tautz, A. Lell, J. Müller, F. Kopp, B. Stojetz, T. Hager, G. Brüderl, A. Avramescu, T. Lermer, J. Ristic, and U. Strauss, “Beyond blue pico laser: development of high power blue and low power direct green,” Proc. SPIE 8277, 82770K (2012).
[Crossref]

S. Lutgen, D. Dini, I. Pietzonka, S. Tautz, A. Breidenassel, A. Lell, A. Avramescu, C. Eichler, T. Lermer, J. Müller, G. Bruederl, A. Gomez-Iglesias, U. Strauss, W. G. Scheibenzuber, U. T. Schwarz, B. Pasenow, and S. Koch, “Recent results of blue and green InGaN laser diodes for laser projection,” Proc. SPIE 7953, 79530G (2011).
[Crossref]

D. Queren, A. Avramescu, G. Brüderl, A. Breidenassel, M. Schillgalies, S. Lutgen, and U. Strauß, “500 nm electrically driven InGaN based laser diodes,” Appl. Phys. Lett. 94, 081119 (2009).
[Crossref]

Balle, S.

L. Furfaro, F. Pedachi, M. Giudici, X. Hachair, J. Tredicce, and S. Balle, “Mode-switching in semiconductor lasers,” IEEE J. Quantum Electron. 40(10), 1365 (2004).
[Crossref]

A. M. Yacomotti, L. Furfaro, X. Hachair, F. Pedachi, M. Giudici, J. Tredicce, J. Javaloyes, S. Balle, E. A. Viktorov, and P. Mandel, “Dynamics of multimode semiconductor lasers,” Phys. Rev. A 69(5), 053816 (2004).
[Crossref]

Braun, H.

B. Schmidtke, H. Braun, U. T. Schwarz, D. Queren, M. Schillgalies, S. Lutgen, and U. Strauß, “Time resolved measurement of longitudinal mode competition in 405 nm (Al,In)GaN laser diodes,” Phys. Status Solidi C 6, S860–S863 (2009).
[Crossref]

T. Meyer, H. Braun, U. T. Schwarz, S. Tautz, M. Schillgalies, S. Lutgen, and U. Strauss, “Spectral dynamics of 405 nm (Al,In)GaN laser diodes grown on GaN and SiC substrate,” Opt. Express 16(10), 6833–6845 (2008).
[Crossref] [PubMed]

Breidenassel, A.

S. Lutgen, D. Dini, I. Pietzonka, S. Tautz, A. Breidenassel, A. Lell, A. Avramescu, C. Eichler, T. Lermer, J. Müller, G. Bruederl, A. Gomez-Iglesias, U. Strauss, W. G. Scheibenzuber, U. T. Schwarz, B. Pasenow, and S. Koch, “Recent results of blue and green InGaN laser diodes for laser projection,” Proc. SPIE 7953, 79530G (2011).
[Crossref]

D. Queren, A. Avramescu, G. Brüderl, A. Breidenassel, M. Schillgalies, S. Lutgen, and U. Strauß, “500 nm electrically driven InGaN based laser diodes,” Appl. Phys. Lett. 94, 081119 (2009).
[Crossref]

Brüderl, G.

U. Strauß, T. Hager, G. Brüderl, T. Wurm, A. Somers, C. Eichler, C. Vierheilig, A. Löffler, J. Ristic, and A. Avramescu, “Recent advances in c-plane GaN visible lasers,” Proc. SPIE 8986, 89861L (2014).
[Crossref]

C. Vierheilig, C. Eichler, S. Tautz, A. Lell, J. Müller, F. Kopp, B. Stojetz, T. Hager, G. Brüderl, A. Avramescu, T. Lermer, J. Ristic, and U. Strauss, “Beyond blue pico laser: development of high power blue and low power direct green,” Proc. SPIE 8277, 82770K (2012).
[Crossref]

D. Queren, A. Avramescu, G. Brüderl, A. Breidenassel, M. Schillgalies, S. Lutgen, and U. Strauß, “500 nm electrically driven InGaN based laser diodes,” Appl. Phys. Lett. 94, 081119 (2009).
[Crossref]

Bruederl, G.

S. Lutgen, D. Dini, I. Pietzonka, S. Tautz, A. Breidenassel, A. Lell, A. Avramescu, C. Eichler, T. Lermer, J. Müller, G. Bruederl, A. Gomez-Iglesias, U. Strauss, W. G. Scheibenzuber, U. T. Schwarz, B. Pasenow, and S. Koch, “Recent results of blue and green InGaN laser diodes for laser projection,” Proc. SPIE 7953, 79530G (2011).
[Crossref]

Carlin, J.-F.

W. G. Scheibenzuber, U. T. Schwarz, L. Sulmoni, J. Dorsaz, J.-F. Carlin, and N. Grandjean, “Recombination coefficients of GaN-based laser diodes,” J. Appl. Phys. 109, 093106 (2011).
[Crossref]

Coldren, L. A.

L. A. Coldren, S. W. Corzine, and M. L. Mashanovitch, Diode Lasers and Photonic Integrated Circuits (John Wiley & Sons, 2012).
[Crossref]

Corzine, S. W.

L. A. Coldren, S. W. Corzine, and M. L. Mashanovitch, Diode Lasers and Photonic Integrated Circuits (John Wiley & Sons, 2012).
[Crossref]

Czernecki, R.

P. Perlin, L. Marona, K. Holc, P. Wisniewski, T. Suski, M. Leszczynski, R. Czernecki, S. Najda, M. Zajac, and R. Kucharski, “InGaN laser diode mini-arrays,” Appl. Phys. Express 4, 062103 (2011).
[Crossref]

Dejima, N.

M. Omori, N. Mori, and N. Dejima, “Tunable light source with GaN-based violet laser diode,” Proc. SPIE 8625, 86251A (2013).
[Crossref]

Dini, D.

S. Lutgen, D. Dini, I. Pietzonka, S. Tautz, A. Breidenassel, A. Lell, A. Avramescu, C. Eichler, T. Lermer, J. Müller, G. Bruederl, A. Gomez-Iglesias, U. Strauss, W. G. Scheibenzuber, U. T. Schwarz, B. Pasenow, and S. Koch, “Recent results of blue and green InGaN laser diodes for laser projection,” Proc. SPIE 7953, 79530G (2011).
[Crossref]

Dorsaz, J.

W. G. Scheibenzuber, U. T. Schwarz, L. Sulmoni, J. Dorsaz, J.-F. Carlin, and N. Grandjean, “Recombination coefficients of GaN-based laser diodes,” J. Appl. Phys. 109, 093106 (2011).
[Crossref]

Eichler, C.

U. Strauß, T. Hager, G. Brüderl, T. Wurm, A. Somers, C. Eichler, C. Vierheilig, A. Löffler, J. Ristic, and A. Avramescu, “Recent advances in c-plane GaN visible lasers,” Proc. SPIE 8986, 89861L (2014).
[Crossref]

C. Vierheilig, C. Eichler, S. Tautz, A. Lell, J. Müller, F. Kopp, B. Stojetz, T. Hager, G. Brüderl, A. Avramescu, T. Lermer, J. Ristic, and U. Strauss, “Beyond blue pico laser: development of high power blue and low power direct green,” Proc. SPIE 8277, 82770K (2012).
[Crossref]

S. Lutgen, D. Dini, I. Pietzonka, S. Tautz, A. Breidenassel, A. Lell, A. Avramescu, C. Eichler, T. Lermer, J. Müller, G. Bruederl, A. Gomez-Iglesias, U. Strauss, W. G. Scheibenzuber, U. T. Schwarz, B. Pasenow, and S. Koch, “Recent results of blue and green InGaN laser diodes for laser projection,” Proc. SPIE 7953, 79530G (2011).
[Crossref]

C. Eichler, S. Schad, F. Scholz, D. Hofstetter, S. Miller, A. Weimar, A. Lell, and V. Härle, “Observation of temperature-independent longitudinal-mode patterns in violet-blue InGaN-based laser diodes,” IEEE Phot. Techn. Lett. 17(9), 1782 (2005).
[Crossref]

Enya, Y.

S. Takagi, Y. Enya, T. Kyono, M. Adachi, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, T. Nakamura, K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, and M. Ikeda, “High-power (over 100 mW) green laser diodes on semipolar {202̄1} GaN substrates operating at wavelengths beyond 530 nm,” Appl. Phys. Express 5, 082102 (2012).
[Crossref]

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm green lasing of InGaN based laser diodes on semi-polar {202̄1} free-standing GaN substrates,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Furfaro, L.

L. Furfaro, F. Pedachi, M. Giudici, X. Hachair, J. Tredicce, and S. Balle, “Mode-switching in semiconductor lasers,” IEEE J. Quantum Electron. 40(10), 1365 (2004).
[Crossref]

A. M. Yacomotti, L. Furfaro, X. Hachair, F. Pedachi, M. Giudici, J. Tredicce, J. Javaloyes, S. Balle, E. A. Viktorov, and P. Mandel, “Dynamics of multimode semiconductor lasers,” Phys. Rev. A 69(5), 053816 (2004).
[Crossref]

Fuutagawa, N.

S. Takagi, Y. Enya, T. Kyono, M. Adachi, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, T. Nakamura, K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, and M. Ikeda, “High-power (over 100 mW) green laser diodes on semipolar {202̄1} GaN substrates operating at wavelengths beyond 530 nm,” Appl. Phys. Express 5, 082102 (2012).
[Crossref]

Giudici, M.

A. M. Yacomotti, L. Furfaro, X. Hachair, F. Pedachi, M. Giudici, J. Tredicce, J. Javaloyes, S. Balle, E. A. Viktorov, and P. Mandel, “Dynamics of multimode semiconductor lasers,” Phys. Rev. A 69(5), 053816 (2004).
[Crossref]

L. Furfaro, F. Pedachi, M. Giudici, X. Hachair, J. Tredicce, and S. Balle, “Mode-switching in semiconductor lasers,” IEEE J. Quantum Electron. 40(10), 1365 (2004).
[Crossref]

Gomez-Iglesias, A.

T. Lermer, A. Gomez-Iglesias, M. Sabathil, J. Müller, S. Lutgen, U. Strauss, B. Pasenow, J. Hader, J. V. Moloney, S. W. Koch, W. Scheibenzuber, and U. T. Schwarz, “Gain of blue and cyan InGaN laser diodes,” Appl. Phys. Lett. 98, 021115 (2011).
[Crossref]

S. Lutgen, D. Dini, I. Pietzonka, S. Tautz, A. Breidenassel, A. Lell, A. Avramescu, C. Eichler, T. Lermer, J. Müller, G. Bruederl, A. Gomez-Iglesias, U. Strauss, W. G. Scheibenzuber, U. T. Schwarz, B. Pasenow, and S. Koch, “Recent results of blue and green InGaN laser diodes for laser projection,” Proc. SPIE 7953, 79530G (2011).
[Crossref]

Grandjean, N.

W. G. Scheibenzuber, U. T. Schwarz, L. Sulmoni, J. Dorsaz, J.-F. Carlin, and N. Grandjean, “Recombination coefficients of GaN-based laser diodes,” J. Appl. Phys. 109, 093106 (2011).
[Crossref]

Hachair, X.

A. M. Yacomotti, L. Furfaro, X. Hachair, F. Pedachi, M. Giudici, J. Tredicce, J. Javaloyes, S. Balle, E. A. Viktorov, and P. Mandel, “Dynamics of multimode semiconductor lasers,” Phys. Rev. A 69(5), 053816 (2004).
[Crossref]

L. Furfaro, F. Pedachi, M. Giudici, X. Hachair, J. Tredicce, and S. Balle, “Mode-switching in semiconductor lasers,” IEEE J. Quantum Electron. 40(10), 1365 (2004).
[Crossref]

Hader, J.

T. Lermer, A. Gomez-Iglesias, M. Sabathil, J. Müller, S. Lutgen, U. Strauss, B. Pasenow, J. Hader, J. V. Moloney, S. W. Koch, W. Scheibenzuber, and U. T. Schwarz, “Gain of blue and cyan InGaN laser diodes,” Appl. Phys. Lett. 98, 021115 (2011).
[Crossref]

Hager, T.

U. Strauß, T. Hager, G. Brüderl, T. Wurm, A. Somers, C. Eichler, C. Vierheilig, A. Löffler, J. Ristic, and A. Avramescu, “Recent advances in c-plane GaN visible lasers,” Proc. SPIE 8986, 89861L (2014).
[Crossref]

C. Vierheilig, C. Eichler, S. Tautz, A. Lell, J. Müller, F. Kopp, B. Stojetz, T. Hager, G. Brüderl, A. Avramescu, T. Lermer, J. Ristic, and U. Strauss, “Beyond blue pico laser: development of high power blue and low power direct green,” Proc. SPIE 8277, 82770K (2012).
[Crossref]

Hamaguchi, T.

S. Takagi, Y. Enya, T. Kyono, M. Adachi, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, T. Nakamura, K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, and M. Ikeda, “High-power (over 100 mW) green laser diodes on semipolar {202̄1} GaN substrates operating at wavelengths beyond 530 nm,” Appl. Phys. Express 5, 082102 (2012).
[Crossref]

Härle, V.

C. Eichler, S. Schad, F. Scholz, D. Hofstetter, S. Miller, A. Weimar, A. Lell, and V. Härle, “Observation of temperature-independent longitudinal-mode patterns in violet-blue InGaN-based laser diodes,” IEEE Phot. Techn. Lett. 17(9), 1782 (2005).
[Crossref]

U. T. Schwarz, W. Wegscheider, A. Lell, and V. Härle, “Nitride-based in-plane laser diodes with vertical current path,” Proc. SPIE 5365, 267 (2004).
[Crossref]

Hayashi, K.

D. Ueda, K. Saito, T. Iwamura, Y. Takemoto, H. Yamatsu, T. Horigome, M. Oyamada, K. Hayashi, N. Tanabe, H. Miyamoto, A. Nakaoki, J. Horigome, H. Uchiyama, K. S. Yun, and S. Kobayashi, “Dynamic recording of 200 Gbytes in three-dimensional optical disk by a 405 nm wavelength picosecond laser,” Jap. J. Appl. Phys. 50, 032704 (2011).
[Crossref]

Hofstetter, D.

C. Eichler, S. Schad, F. Scholz, D. Hofstetter, S. Miller, A. Weimar, A. Lell, and V. Härle, “Observation of temperature-independent longitudinal-mode patterns in violet-blue InGaN-based laser diodes,” IEEE Phot. Techn. Lett. 17(9), 1782 (2005).
[Crossref]

Holc, K.

K. Holc, G. Lükens, T. Weig, K. Köhler, J. Wagner, and U. T. Schwarz, “Gallium nitride laser diodes with integrated absorber: on the dynamics of self-pulsation,” Phys. Status Solidi C 11(3–4), 670–673 (2014).
[Crossref]

K. Holc, T. Weig, K. Köhler, J. Wagner, and U. T. Schwarz, “Impact of band structure and absorber dynamics on self-Q-switching in GaN-based multisection laser diodes at high reverse bias,” Appl. Phys. Express 6, 084101 (2013).
[Crossref]

P. Perlin, L. Marona, K. Holc, P. Wisniewski, T. Suski, M. Leszczynski, R. Czernecki, S. Najda, M. Zajac, and R. Kucharski, “InGaN laser diode mini-arrays,” Appl. Phys. Express 4, 062103 (2011).
[Crossref]

Horigome, J.

D. Ueda, K. Saito, T. Iwamura, Y. Takemoto, H. Yamatsu, T. Horigome, M. Oyamada, K. Hayashi, N. Tanabe, H. Miyamoto, A. Nakaoki, J. Horigome, H. Uchiyama, K. S. Yun, and S. Kobayashi, “Dynamic recording of 200 Gbytes in three-dimensional optical disk by a 405 nm wavelength picosecond laser,” Jap. J. Appl. Phys. 50, 032704 (2011).
[Crossref]

Horigome, T.

D. Ueda, K. Saito, T. Iwamura, Y. Takemoto, H. Yamatsu, T. Horigome, M. Oyamada, K. Hayashi, N. Tanabe, H. Miyamoto, A. Nakaoki, J. Horigome, H. Uchiyama, K. S. Yun, and S. Kobayashi, “Dynamic recording of 200 Gbytes in three-dimensional optical disk by a 405 nm wavelength picosecond laser,” Jap. J. Appl. Phys. 50, 032704 (2011).
[Crossref]

Hornuss, C.

W. G. Scheibenzuber, C. Hornuss, and U. T. Schwarz, “Dynamics of GaN-based laser diodes from violet to green,” Proc. SPIE 7953, 79530K (2011).
[Crossref]

Houlihan, J.

Y. Tanguy, J. Houlihan, and G. Huyet, “Synchronization and clustering in a multimode quantum dot laser,” Phys. Rev. Lett. 96, 053902 (2006).
[Crossref] [PubMed]

Huyet, G.

Y. Tanguy, J. Houlihan, and G. Huyet, “Synchronization and clustering in a multimode quantum dot laser,” Phys. Rev. Lett. 96, 053902 (2006).
[Crossref] [PubMed]

Ikeda, M.

S. Takagi, Y. Enya, T. Kyono, M. Adachi, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, T. Nakamura, K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, and M. Ikeda, “High-power (over 100 mW) green laser diodes on semipolar {202̄1} GaN substrates operating at wavelengths beyond 530 nm,” Appl. Phys. Express 5, 082102 (2012).
[Crossref]

R. Koda, T. Oki, S. Kono, T. Miyajima, H. Watanabe, M. Kuramoto, M. Ikeda, and H. Yokoyama, “300 W peak power picosecond optical pulse generation by blue-violet GaInN mode-locked laser diode and semiconductor optical amplifier,” Appl. Phys. Express 5, 022702 (2012).
[Crossref]

Ikegami, T.

S. Takagi, Y. Enya, T. Kyono, M. Adachi, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, T. Nakamura, K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, and M. Ikeda, “High-power (over 100 mW) green laser diodes on semipolar {202̄1} GaN substrates operating at wavelengths beyond 530 nm,” Appl. Phys. Express 5, 082102 (2012).
[Crossref]

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm green lasing of InGaN based laser diodes on semi-polar {202̄1} free-standing GaN substrates,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Inoue, S.

S. Inoue, H. Ohzu, S. Machida, and Y. Yamamoto, “Quantum correlation between longitudinal-mode intensities in a multimode squeezed semiconductor laser,” Phys. Rev. A 46(5), 2757 (1992).
[Crossref] [PubMed]

Ishikawa, H.

H. Ishikawa, M. Yano, and M. Takusagawa, “Mechanism of asymmetric longitudinal mode competition in In-GaAsP/InP lasers,” Appl. Phys. Lett. 40, 553 (1982).
[Crossref]

Ito, R.

N. Ogasawara and R. Ito, “Longitudinal mode competition and asymmetric gain saturation in semiconductor injection lasers. I. Experiment,” Jpn. J. Appl. Phys. 27(4), 607–614 (1988).
[Crossref]

N. Ogasawara and R. Ito, “Longitudinal mode competition and asymmetric gain saturation in semiconductor injection lasers. II. Theory,” Jpn. J. Appl. Phys. 27(4), 615–626 (1988).
[Crossref]

Iwamura, T.

D. Ueda, K. Saito, T. Iwamura, Y. Takemoto, H. Yamatsu, T. Horigome, M. Oyamada, K. Hayashi, N. Tanabe, H. Miyamoto, A. Nakaoki, J. Horigome, H. Uchiyama, K. S. Yun, and S. Kobayashi, “Dynamic recording of 200 Gbytes in three-dimensional optical disk by a 405 nm wavelength picosecond laser,” Jap. J. Appl. Phys. 50, 032704 (2011).
[Crossref]

Iwasa, N.

S. Nakamura, M. Senoh, S.-I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, “Longitudinal mode spectra and ultrashort pulse generation of InGaN multiquantum well structure laser diodes,” Appl. Phys. Lett. 70, 616 (1997).
[Crossref]

S. Nakamura, M. Senoh, S.-I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, “Subband emissions of InGaN multi-quantum-well laser diodes under room-temperature continuous wave operation,” Appl. Phys. Lett. 70, 2753 (1997).
[Crossref]

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, “Optical gain and carrier lifetime of InGaN multi-quantum well structure laser diodes,” Appl. Phys. Lett. 69, 1568 (1996).
[Crossref]

Javaloyes, J.

A. M. Yacomotti, L. Furfaro, X. Hachair, F. Pedachi, M. Giudici, J. Tredicce, J. Javaloyes, S. Balle, E. A. Viktorov, and P. Mandel, “Dynamics of multimode semiconductor lasers,” Phys. Rev. A 69(5), 053816 (2004).
[Crossref]

Katayama, K.

S. Takagi, Y. Enya, T. Kyono, M. Adachi, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, T. Nakamura, K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, and M. Ikeda, “High-power (over 100 mW) green laser diodes on semipolar {202̄1} GaN substrates operating at wavelengths beyond 530 nm,” Appl. Phys. Express 5, 082102 (2012).
[Crossref]

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm green lasing of InGaN based laser diodes on semi-polar {202̄1} free-standing GaN substrates,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Kiyoku, H.

S. Nakamura, M. Senoh, S.-I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, “Longitudinal mode spectra and ultrashort pulse generation of InGaN multiquantum well structure laser diodes,” Appl. Phys. Lett. 70, 616 (1997).
[Crossref]

S. Nakamura, M. Senoh, S.-I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, “Subband emissions of InGaN multi-quantum-well laser diodes under room-temperature continuous wave operation,” Appl. Phys. Lett. 70, 2753 (1997).
[Crossref]

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, “Optical gain and carrier lifetime of InGaN multi-quantum well structure laser diodes,” Appl. Phys. Lett. 69, 1568 (1996).
[Crossref]

Kobayashi, S.

D. Ueda, K. Saito, T. Iwamura, Y. Takemoto, H. Yamatsu, T. Horigome, M. Oyamada, K. Hayashi, N. Tanabe, H. Miyamoto, A. Nakaoki, J. Horigome, H. Uchiyama, K. S. Yun, and S. Kobayashi, “Dynamic recording of 200 Gbytes in three-dimensional optical disk by a 405 nm wavelength picosecond laser,” Jap. J. Appl. Phys. 50, 032704 (2011).
[Crossref]

Koch, S.

S. Lutgen, D. Dini, I. Pietzonka, S. Tautz, A. Breidenassel, A. Lell, A. Avramescu, C. Eichler, T. Lermer, J. Müller, G. Bruederl, A. Gomez-Iglesias, U. Strauss, W. G. Scheibenzuber, U. T. Schwarz, B. Pasenow, and S. Koch, “Recent results of blue and green InGaN laser diodes for laser projection,” Proc. SPIE 7953, 79530G (2011).
[Crossref]

Koch, S. W.

T. Lermer, A. Gomez-Iglesias, M. Sabathil, J. Müller, S. Lutgen, U. Strauss, B. Pasenow, J. Hader, J. V. Moloney, S. W. Koch, W. Scheibenzuber, and U. T. Schwarz, “Gain of blue and cyan InGaN laser diodes,” Appl. Phys. Lett. 98, 021115 (2011).
[Crossref]

Koda, R.

S. Kono, H. Watanabe, R. Koda, T. Miyajima, and M. Kuramoto, “200-fs pulse generation from a GaInN semiconductor laser diode passively mode-locked in a dispersion-compensated external cavity,” Appl. Phys. Lett. 101, 081121 (2012).
[Crossref]

R. Koda, T. Oki, S. Kono, T. Miyajima, H. Watanabe, M. Kuramoto, M. Ikeda, and H. Yokoyama, “300 W peak power picosecond optical pulse generation by blue-violet GaInN mode-locked laser diode and semiconductor optical amplifier,” Appl. Phys. Express 5, 022702 (2012).
[Crossref]

Köhler, K.

K. Holc, G. Lükens, T. Weig, K. Köhler, J. Wagner, and U. T. Schwarz, “Gallium nitride laser diodes with integrated absorber: on the dynamics of self-pulsation,” Phys. Status Solidi C 11(3–4), 670–673 (2014).
[Crossref]

K. Holc, T. Weig, K. Köhler, J. Wagner, and U. T. Schwarz, “Impact of band structure and absorber dynamics on self-Q-switching in GaN-based multisection laser diodes at high reverse bias,” Appl. Phys. Express 6, 084101 (2013).
[Crossref]

Kono, S.

R. Koda, T. Oki, S. Kono, T. Miyajima, H. Watanabe, M. Kuramoto, M. Ikeda, and H. Yokoyama, “300 W peak power picosecond optical pulse generation by blue-violet GaInN mode-locked laser diode and semiconductor optical amplifier,” Appl. Phys. Express 5, 022702 (2012).
[Crossref]

S. Kono, H. Watanabe, R. Koda, T. Miyajima, and M. Kuramoto, “200-fs pulse generation from a GaInN semiconductor laser diode passively mode-locked in a dispersion-compensated external cavity,” Appl. Phys. Lett. 101, 081121 (2012).
[Crossref]

Kopp, F.

C. Vierheilig, C. Eichler, S. Tautz, A. Lell, J. Müller, F. Kopp, B. Stojetz, T. Hager, G. Brüderl, A. Avramescu, T. Lermer, J. Ristic, and U. Strauss, “Beyond blue pico laser: development of high power blue and low power direct green,” Proc. SPIE 8277, 82770K (2012).
[Crossref]

Kozaki, T.

T. Miyoshi, S. Masui, T. Okada, T. Yanamoto, T. Kozaki, S.-I. Nagahama, and T. Mukai, “510–515 nm InGaN-based green laser diodes on c-plane GaN substrate,” Appl. Phys. Express 2, 062201 (2009).
[Crossref]

Kucharski, R.

P. Perlin, L. Marona, K. Holc, P. Wisniewski, T. Suski, M. Leszczynski, R. Czernecki, S. Najda, M. Zajac, and R. Kucharski, “InGaN laser diode mini-arrays,” Appl. Phys. Express 4, 062103 (2011).
[Crossref]

Kumano, T.

S. Takagi, Y. Enya, T. Kyono, M. Adachi, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, T. Nakamura, K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, and M. Ikeda, “High-power (over 100 mW) green laser diodes on semipolar {202̄1} GaN substrates operating at wavelengths beyond 530 nm,” Appl. Phys. Express 5, 082102 (2012).
[Crossref]

Kuramoto, M.

R. Koda, T. Oki, S. Kono, T. Miyajima, H. Watanabe, M. Kuramoto, M. Ikeda, and H. Yokoyama, “300 W peak power picosecond optical pulse generation by blue-violet GaInN mode-locked laser diode and semiconductor optical amplifier,” Appl. Phys. Express 5, 022702 (2012).
[Crossref]

S. Kono, H. Watanabe, R. Koda, T. Miyajima, and M. Kuramoto, “200-fs pulse generation from a GaInN semiconductor laser diode passively mode-locked in a dispersion-compensated external cavity,” Appl. Phys. Lett. 101, 081121 (2012).
[Crossref]

Kyono, T.

S. Takagi, Y. Enya, T. Kyono, M. Adachi, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, T. Nakamura, K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, and M. Ikeda, “High-power (over 100 mW) green laser diodes on semipolar {202̄1} GaN substrates operating at wavelengths beyond 530 nm,” Appl. Phys. Express 5, 082102 (2012).
[Crossref]

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm green lasing of InGaN based laser diodes on semi-polar {202̄1} free-standing GaN substrates,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Lee, Y. T.

S. H. Park, D. Ahn, E. H. Park, T. K. Yoo, and Y. T. Lee, “Many-body optical gain and intraband relaxation time of wurtzite InGaN/GaN quantum-well lasers and comparison with experiment,” Appl. Phys. Lett. 87, 044103 (2005).
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Lell, A.

C. Vierheilig, C. Eichler, S. Tautz, A. Lell, J. Müller, F. Kopp, B. Stojetz, T. Hager, G. Brüderl, A. Avramescu, T. Lermer, J. Ristic, and U. Strauss, “Beyond blue pico laser: development of high power blue and low power direct green,” Proc. SPIE 8277, 82770K (2012).
[Crossref]

S. Lutgen, D. Dini, I. Pietzonka, S. Tautz, A. Breidenassel, A. Lell, A. Avramescu, C. Eichler, T. Lermer, J. Müller, G. Bruederl, A. Gomez-Iglesias, U. Strauss, W. G. Scheibenzuber, U. T. Schwarz, B. Pasenow, and S. Koch, “Recent results of blue and green InGaN laser diodes for laser projection,” Proc. SPIE 7953, 79530G (2011).
[Crossref]

C. Eichler, S. Schad, F. Scholz, D. Hofstetter, S. Miller, A. Weimar, A. Lell, and V. Härle, “Observation of temperature-independent longitudinal-mode patterns in violet-blue InGaN-based laser diodes,” IEEE Phot. Techn. Lett. 17(9), 1782 (2005).
[Crossref]

U. T. Schwarz, W. Wegscheider, A. Lell, and V. Härle, “Nitride-based in-plane laser diodes with vertical current path,” Proc. SPIE 5365, 267 (2004).
[Crossref]

Lermer, T.

C. Vierheilig, C. Eichler, S. Tautz, A. Lell, J. Müller, F. Kopp, B. Stojetz, T. Hager, G. Brüderl, A. Avramescu, T. Lermer, J. Ristic, and U. Strauss, “Beyond blue pico laser: development of high power blue and low power direct green,” Proc. SPIE 8277, 82770K (2012).
[Crossref]

S. Lutgen, D. Dini, I. Pietzonka, S. Tautz, A. Breidenassel, A. Lell, A. Avramescu, C. Eichler, T. Lermer, J. Müller, G. Bruederl, A. Gomez-Iglesias, U. Strauss, W. G. Scheibenzuber, U. T. Schwarz, B. Pasenow, and S. Koch, “Recent results of blue and green InGaN laser diodes for laser projection,” Proc. SPIE 7953, 79530G (2011).
[Crossref]

T. Lermer, A. Gomez-Iglesias, M. Sabathil, J. Müller, S. Lutgen, U. Strauss, B. Pasenow, J. Hader, J. V. Moloney, S. W. Koch, W. Scheibenzuber, and U. T. Schwarz, “Gain of blue and cyan InGaN laser diodes,” Appl. Phys. Lett. 98, 021115 (2011).
[Crossref]

W. G. Scheibenzuber, U. T. Schwarz, T. Lermer, S. Lutgen, and U. Strauss, “Antiguiding factor of GaN-based laser diodes from UV to green,” Appl. Phys. Lett. 97, 021102 (2010).
[Crossref]

Leszczynski, M.

P. Perlin, L. Marona, K. Holc, P. Wisniewski, T. Suski, M. Leszczynski, R. Czernecki, S. Najda, M. Zajac, and R. Kucharski, “InGaN laser diode mini-arrays,” Appl. Phys. Express 4, 062103 (2011).
[Crossref]

Löffler, A.

U. Strauß, T. Hager, G. Brüderl, T. Wurm, A. Somers, C. Eichler, C. Vierheilig, A. Löffler, J. Ristic, and A. Avramescu, “Recent advances in c-plane GaN visible lasers,” Proc. SPIE 8986, 89861L (2014).
[Crossref]

Lükens, G.

K. Holc, G. Lükens, T. Weig, K. Köhler, J. Wagner, and U. T. Schwarz, “Gallium nitride laser diodes with integrated absorber: on the dynamics of self-pulsation,” Phys. Status Solidi C 11(3–4), 670–673 (2014).
[Crossref]

Lutgen, S.

T. Lermer, A. Gomez-Iglesias, M. Sabathil, J. Müller, S. Lutgen, U. Strauss, B. Pasenow, J. Hader, J. V. Moloney, S. W. Koch, W. Scheibenzuber, and U. T. Schwarz, “Gain of blue and cyan InGaN laser diodes,” Appl. Phys. Lett. 98, 021115 (2011).
[Crossref]

S. Lutgen, D. Dini, I. Pietzonka, S. Tautz, A. Breidenassel, A. Lell, A. Avramescu, C. Eichler, T. Lermer, J. Müller, G. Bruederl, A. Gomez-Iglesias, U. Strauss, W. G. Scheibenzuber, U. T. Schwarz, B. Pasenow, and S. Koch, “Recent results of blue and green InGaN laser diodes for laser projection,” Proc. SPIE 7953, 79530G (2011).
[Crossref]

W. G. Scheibenzuber, U. T. Schwarz, T. Lermer, S. Lutgen, and U. Strauss, “Antiguiding factor of GaN-based laser diodes from UV to green,” Appl. Phys. Lett. 97, 021102 (2010).
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B. Schmidtke, H. Braun, U. T. Schwarz, D. Queren, M. Schillgalies, S. Lutgen, and U. Strauß, “Time resolved measurement of longitudinal mode competition in 405 nm (Al,In)GaN laser diodes,” Phys. Status Solidi C 6, S860–S863 (2009).
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D. Queren, A. Avramescu, G. Brüderl, A. Breidenassel, M. Schillgalies, S. Lutgen, and U. Strauß, “500 nm electrically driven InGaN based laser diodes,” Appl. Phys. Lett. 94, 081119 (2009).
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T. Meyer, H. Braun, U. T. Schwarz, S. Tautz, M. Schillgalies, S. Lutgen, and U. Strauss, “Spectral dynamics of 405 nm (Al,In)GaN laser diodes grown on GaN and SiC substrate,” Opt. Express 16(10), 6833–6845 (2008).
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A. M. Yacomotti, L. Furfaro, X. Hachair, F. Pedachi, M. Giudici, J. Tredicce, J. Javaloyes, S. Balle, E. A. Viktorov, and P. Mandel, “Dynamics of multimode semiconductor lasers,” Phys. Rev. A 69(5), 053816 (2004).
[Crossref]

Marona, L.

P. Perlin, L. Marona, K. Holc, P. Wisniewski, T. Suski, M. Leszczynski, R. Czernecki, S. Najda, M. Zajac, and R. Kucharski, “InGaN laser diode mini-arrays,” Appl. Phys. Express 4, 062103 (2011).
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L. A. Coldren, S. W. Corzine, and M. L. Mashanovitch, Diode Lasers and Photonic Integrated Circuits (John Wiley & Sons, 2012).
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Masui, S.

T. Miyoshi, S. Masui, T. Okada, T. Yanamoto, T. Kozaki, S.-I. Nagahama, and T. Mukai, “510–515 nm InGaN-based green laser diodes on c-plane GaN substrate,” Appl. Phys. Express 2, 062201 (2009).
[Crossref]

Matsushita, T.

S. Nakamura, M. Senoh, S.-I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, “Subband emissions of InGaN multi-quantum-well laser diodes under room-temperature continuous wave operation,” Appl. Phys. Lett. 70, 2753 (1997).
[Crossref]

S. Nakamura, M. Senoh, S.-I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, “Longitudinal mode spectra and ultrashort pulse generation of InGaN multiquantum well structure laser diodes,” Appl. Phys. Lett. 70, 616 (1997).
[Crossref]

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, “Optical gain and carrier lifetime of InGaN multi-quantum well structure laser diodes,” Appl. Phys. Lett. 69, 1568 (1996).
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I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, “Band parameters for IIIV compound semiconductors and their alloys,” J. Appl. Phys. 89(11), 5815 (2001).
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Meyer, T.

Miller, S.

C. Eichler, S. Schad, F. Scholz, D. Hofstetter, S. Miller, A. Weimar, A. Lell, and V. Härle, “Observation of temperature-independent longitudinal-mode patterns in violet-blue InGaN-based laser diodes,” IEEE Phot. Techn. Lett. 17(9), 1782 (2005).
[Crossref]

Miyajima, T.

S. Kono, H. Watanabe, R. Koda, T. Miyajima, and M. Kuramoto, “200-fs pulse generation from a GaInN semiconductor laser diode passively mode-locked in a dispersion-compensated external cavity,” Appl. Phys. Lett. 101, 081121 (2012).
[Crossref]

R. Koda, T. Oki, S. Kono, T. Miyajima, H. Watanabe, M. Kuramoto, M. Ikeda, and H. Yokoyama, “300 W peak power picosecond optical pulse generation by blue-violet GaInN mode-locked laser diode and semiconductor optical amplifier,” Appl. Phys. Express 5, 022702 (2012).
[Crossref]

Miyamoto, H.

D. Ueda, K. Saito, T. Iwamura, Y. Takemoto, H. Yamatsu, T. Horigome, M. Oyamada, K. Hayashi, N. Tanabe, H. Miyamoto, A. Nakaoki, J. Horigome, H. Uchiyama, K. S. Yun, and S. Kobayashi, “Dynamic recording of 200 Gbytes in three-dimensional optical disk by a 405 nm wavelength picosecond laser,” Jap. J. Appl. Phys. 50, 032704 (2011).
[Crossref]

Miyoshi, T.

T. Miyoshi, S. Masui, T. Okada, T. Yanamoto, T. Kozaki, S.-I. Nagahama, and T. Mukai, “510–515 nm InGaN-based green laser diodes on c-plane GaN substrate,” Appl. Phys. Express 2, 062201 (2009).
[Crossref]

Moloney, J. V.

T. Lermer, A. Gomez-Iglesias, M. Sabathil, J. Müller, S. Lutgen, U. Strauss, B. Pasenow, J. Hader, J. V. Moloney, S. W. Koch, W. Scheibenzuber, and U. T. Schwarz, “Gain of blue and cyan InGaN laser diodes,” Appl. Phys. Lett. 98, 021115 (2011).
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M. Omori, N. Mori, and N. Dejima, “Tunable light source with GaN-based violet laser diode,” Proc. SPIE 8625, 86251A (2013).
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Mukai, T.

T. Miyoshi, S. Masui, T. Okada, T. Yanamoto, T. Kozaki, S.-I. Nagahama, and T. Mukai, “510–515 nm InGaN-based green laser diodes on c-plane GaN substrate,” Appl. Phys. Express 2, 062201 (2009).
[Crossref]

Müller, J.

C. Vierheilig, C. Eichler, S. Tautz, A. Lell, J. Müller, F. Kopp, B. Stojetz, T. Hager, G. Brüderl, A. Avramescu, T. Lermer, J. Ristic, and U. Strauss, “Beyond blue pico laser: development of high power blue and low power direct green,” Proc. SPIE 8277, 82770K (2012).
[Crossref]

S. Lutgen, D. Dini, I. Pietzonka, S. Tautz, A. Breidenassel, A. Lell, A. Avramescu, C. Eichler, T. Lermer, J. Müller, G. Bruederl, A. Gomez-Iglesias, U. Strauss, W. G. Scheibenzuber, U. T. Schwarz, B. Pasenow, and S. Koch, “Recent results of blue and green InGaN laser diodes for laser projection,” Proc. SPIE 7953, 79530G (2011).
[Crossref]

T. Lermer, A. Gomez-Iglesias, M. Sabathil, J. Müller, S. Lutgen, U. Strauss, B. Pasenow, J. Hader, J. V. Moloney, S. W. Koch, W. Scheibenzuber, and U. T. Schwarz, “Gain of blue and cyan InGaN laser diodes,” Appl. Phys. Lett. 98, 021115 (2011).
[Crossref]

Nagahama, S.

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, “Optical gain and carrier lifetime of InGaN multi-quantum well structure laser diodes,” Appl. Phys. Lett. 69, 1568 (1996).
[Crossref]

Nagahama, S.-I.

T. Miyoshi, S. Masui, T. Okada, T. Yanamoto, T. Kozaki, S.-I. Nagahama, and T. Mukai, “510–515 nm InGaN-based green laser diodes on c-plane GaN substrate,” Appl. Phys. Express 2, 062201 (2009).
[Crossref]

S. Nakamura, M. Senoh, S.-I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, “Longitudinal mode spectra and ultrashort pulse generation of InGaN multiquantum well structure laser diodes,” Appl. Phys. Lett. 70, 616 (1997).
[Crossref]

S. Nakamura, M. Senoh, S.-I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, “Subband emissions of InGaN multi-quantum-well laser diodes under room-temperature continuous wave operation,” Appl. Phys. Lett. 70, 2753 (1997).
[Crossref]

Naganuma, K.

S. Takagi, Y. Enya, T. Kyono, M. Adachi, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, T. Nakamura, K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, and M. Ikeda, “High-power (over 100 mW) green laser diodes on semipolar {202̄1} GaN substrates operating at wavelengths beyond 530 nm,” Appl. Phys. Express 5, 082102 (2012).
[Crossref]

Najda, S.

P. Perlin, L. Marona, K. Holc, P. Wisniewski, T. Suski, M. Leszczynski, R. Czernecki, S. Najda, M. Zajac, and R. Kucharski, “InGaN laser diode mini-arrays,” Appl. Phys. Express 4, 062103 (2011).
[Crossref]

Nakajima, H.

S. Takagi, Y. Enya, T. Kyono, M. Adachi, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, T. Nakamura, K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, and M. Ikeda, “High-power (over 100 mW) green laser diodes on semipolar {202̄1} GaN substrates operating at wavelengths beyond 530 nm,” Appl. Phys. Express 5, 082102 (2012).
[Crossref]

Nakamura, S.

S. Nakamura, M. Senoh, S.-I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, “Subband emissions of InGaN multi-quantum-well laser diodes under room-temperature continuous wave operation,” Appl. Phys. Lett. 70, 2753 (1997).
[Crossref]

S. Nakamura, M. Senoh, S.-I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, “Longitudinal mode spectra and ultrashort pulse generation of InGaN multiquantum well structure laser diodes,” Appl. Phys. Lett. 70, 616 (1997).
[Crossref]

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, “Optical gain and carrier lifetime of InGaN multi-quantum well structure laser diodes,” Appl. Phys. Lett. 69, 1568 (1996).
[Crossref]

Nakamura, T.

S. Takagi, Y. Enya, T. Kyono, M. Adachi, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, T. Nakamura, K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, and M. Ikeda, “High-power (over 100 mW) green laser diodes on semipolar {202̄1} GaN substrates operating at wavelengths beyond 530 nm,” Appl. Phys. Express 5, 082102 (2012).
[Crossref]

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm green lasing of InGaN based laser diodes on semi-polar {202̄1} free-standing GaN substrates,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Nakaoki, A.

D. Ueda, K. Saito, T. Iwamura, Y. Takemoto, H. Yamatsu, T. Horigome, M. Oyamada, K. Hayashi, N. Tanabe, H. Miyamoto, A. Nakaoki, J. Horigome, H. Uchiyama, K. S. Yun, and S. Kobayashi, “Dynamic recording of 200 Gbytes in three-dimensional optical disk by a 405 nm wavelength picosecond laser,” Jap. J. Appl. Phys. 50, 032704 (2011).
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N. Ogasawara and R. Ito, “Longitudinal mode competition and asymmetric gain saturation in semiconductor injection lasers. II. Theory,” Jpn. J. Appl. Phys. 27(4), 615–626 (1988).
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B. Schmidtke, H. Braun, U. T. Schwarz, D. Queren, M. Schillgalies, S. Lutgen, and U. Strauß, “Time resolved measurement of longitudinal mode competition in 405 nm (Al,In)GaN laser diodes,” Phys. Status Solidi C 6, S860–S863 (2009).
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U. Strauß, T. Hager, G. Brüderl, T. Wurm, A. Somers, C. Eichler, C. Vierheilig, A. Löffler, J. Ristic, and A. Avramescu, “Recent advances in c-plane GaN visible lasers,” Proc. SPIE 8986, 89861L (2014).
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C. Vierheilig, C. Eichler, S. Tautz, A. Lell, J. Müller, F. Kopp, B. Stojetz, T. Hager, G. Brüderl, A. Avramescu, T. Lermer, J. Ristic, and U. Strauss, “Beyond blue pico laser: development of high power blue and low power direct green,” Proc. SPIE 8277, 82770K (2012).
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Sabathil, M.

T. Lermer, A. Gomez-Iglesias, M. Sabathil, J. Müller, S. Lutgen, U. Strauss, B. Pasenow, J. Hader, J. V. Moloney, S. W. Koch, W. Scheibenzuber, and U. T. Schwarz, “Gain of blue and cyan InGaN laser diodes,” Appl. Phys. Lett. 98, 021115 (2011).
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S. Takagi, Y. Enya, T. Kyono, M. Adachi, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, T. Nakamura, K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, and M. Ikeda, “High-power (over 100 mW) green laser diodes on semipolar {202̄1} GaN substrates operating at wavelengths beyond 530 nm,” Appl. Phys. Express 5, 082102 (2012).
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D. Ueda, K. Saito, T. Iwamura, Y. Takemoto, H. Yamatsu, T. Horigome, M. Oyamada, K. Hayashi, N. Tanabe, H. Miyamoto, A. Nakaoki, J. Horigome, H. Uchiyama, K. S. Yun, and S. Kobayashi, “Dynamic recording of 200 Gbytes in three-dimensional optical disk by a 405 nm wavelength picosecond laser,” Jap. J. Appl. Phys. 50, 032704 (2011).
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C. Eichler, S. Schad, F. Scholz, D. Hofstetter, S. Miller, A. Weimar, A. Lell, and V. Härle, “Observation of temperature-independent longitudinal-mode patterns in violet-blue InGaN-based laser diodes,” IEEE Phot. Techn. Lett. 17(9), 1782 (2005).
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Scheibenzuber, W.

T. Lermer, A. Gomez-Iglesias, M. Sabathil, J. Müller, S. Lutgen, U. Strauss, B. Pasenow, J. Hader, J. V. Moloney, S. W. Koch, W. Scheibenzuber, and U. T. Schwarz, “Gain of blue and cyan InGaN laser diodes,” Appl. Phys. Lett. 98, 021115 (2011).
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Scheibenzuber, W. G.

W. G. Scheibenzuber and U. T. Schwarz, “Unequal pumping of quantum wells in GaN-based laser diodes,” Appl. Phys. Express 5, 042103 (2012).
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W. G. Scheibenzuber, U. T. Schwarz, L. Sulmoni, J. Dorsaz, J.-F. Carlin, and N. Grandjean, “Recombination coefficients of GaN-based laser diodes,” J. Appl. Phys. 109, 093106 (2011).
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W. G. Scheibenzuber and U. T. Schwarz, “Fast self-heating in GaN-based laser diodes,” Appl. Phys. Lett. 98, 181110 (2011).
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W. G. Scheibenzuber, C. Hornuss, and U. T. Schwarz, “Dynamics of GaN-based laser diodes from violet to green,” Proc. SPIE 7953, 79530K (2011).
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S. Lutgen, D. Dini, I. Pietzonka, S. Tautz, A. Breidenassel, A. Lell, A. Avramescu, C. Eichler, T. Lermer, J. Müller, G. Bruederl, A. Gomez-Iglesias, U. Strauss, W. G. Scheibenzuber, U. T. Schwarz, B. Pasenow, and S. Koch, “Recent results of blue and green InGaN laser diodes for laser projection,” Proc. SPIE 7953, 79530G (2011).
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W. G. Scheibenzuber, U. T. Schwarz, T. Lermer, S. Lutgen, and U. Strauss, “Antiguiding factor of GaN-based laser diodes from UV to green,” Appl. Phys. Lett. 97, 021102 (2010).
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W. G. Scheibenzuber, GaN–Based Laser Diodes: Towards Longer Wavelengths and Short Pulses (Springer, 2012), Chap. 3.
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Schillgalies, M.

B. Schmidtke, H. Braun, U. T. Schwarz, D. Queren, M. Schillgalies, S. Lutgen, and U. Strauß, “Time resolved measurement of longitudinal mode competition in 405 nm (Al,In)GaN laser diodes,” Phys. Status Solidi C 6, S860–S863 (2009).
[Crossref]

D. Queren, A. Avramescu, G. Brüderl, A. Breidenassel, M. Schillgalies, S. Lutgen, and U. Strauß, “500 nm electrically driven InGaN based laser diodes,” Appl. Phys. Lett. 94, 081119 (2009).
[Crossref]

T. Meyer, H. Braun, U. T. Schwarz, S. Tautz, M. Schillgalies, S. Lutgen, and U. Strauss, “Spectral dynamics of 405 nm (Al,In)GaN laser diodes grown on GaN and SiC substrate,” Opt. Express 16(10), 6833–6845 (2008).
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Schmidtke, B.

B. Schmidtke, H. Braun, U. T. Schwarz, D. Queren, M. Schillgalies, S. Lutgen, and U. Strauß, “Time resolved measurement of longitudinal mode competition in 405 nm (Al,In)GaN laser diodes,” Phys. Status Solidi C 6, S860–S863 (2009).
[Crossref]

Scholz, F.

C. Eichler, S. Schad, F. Scholz, D. Hofstetter, S. Miller, A. Weimar, A. Lell, and V. Härle, “Observation of temperature-independent longitudinal-mode patterns in violet-blue InGaN-based laser diodes,” IEEE Phot. Techn. Lett. 17(9), 1782 (2005).
[Crossref]

Schwarz, U. T.

K. Holc, G. Lükens, T. Weig, K. Köhler, J. Wagner, and U. T. Schwarz, “Gallium nitride laser diodes with integrated absorber: on the dynamics of self-pulsation,” Phys. Status Solidi C 11(3–4), 670–673 (2014).
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K. Holc, T. Weig, K. Köhler, J. Wagner, and U. T. Schwarz, “Impact of band structure and absorber dynamics on self-Q-switching in GaN-based multisection laser diodes at high reverse bias,” Appl. Phys. Express 6, 084101 (2013).
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W. G. Scheibenzuber and U. T. Schwarz, “Unequal pumping of quantum wells in GaN-based laser diodes,” Appl. Phys. Express 5, 042103 (2012).
[Crossref]

W. G. Scheibenzuber, U. T. Schwarz, L. Sulmoni, J. Dorsaz, J.-F. Carlin, and N. Grandjean, “Recombination coefficients of GaN-based laser diodes,” J. Appl. Phys. 109, 093106 (2011).
[Crossref]

W. G. Scheibenzuber and U. T. Schwarz, “Fast self-heating in GaN-based laser diodes,” Appl. Phys. Lett. 98, 181110 (2011).
[Crossref]

T. Lermer, A. Gomez-Iglesias, M. Sabathil, J. Müller, S. Lutgen, U. Strauss, B. Pasenow, J. Hader, J. V. Moloney, S. W. Koch, W. Scheibenzuber, and U. T. Schwarz, “Gain of blue and cyan InGaN laser diodes,” Appl. Phys. Lett. 98, 021115 (2011).
[Crossref]

W. G. Scheibenzuber, C. Hornuss, and U. T. Schwarz, “Dynamics of GaN-based laser diodes from violet to green,” Proc. SPIE 7953, 79530K (2011).
[Crossref]

S. Lutgen, D. Dini, I. Pietzonka, S. Tautz, A. Breidenassel, A. Lell, A. Avramescu, C. Eichler, T. Lermer, J. Müller, G. Bruederl, A. Gomez-Iglesias, U. Strauss, W. G. Scheibenzuber, U. T. Schwarz, B. Pasenow, and S. Koch, “Recent results of blue and green InGaN laser diodes for laser projection,” Proc. SPIE 7953, 79530G (2011).
[Crossref]

W. G. Scheibenzuber, U. T. Schwarz, T. Lermer, S. Lutgen, and U. Strauss, “Antiguiding factor of GaN-based laser diodes from UV to green,” Appl. Phys. Lett. 97, 021102 (2010).
[Crossref]

B. Schmidtke, H. Braun, U. T. Schwarz, D. Queren, M. Schillgalies, S. Lutgen, and U. Strauß, “Time resolved measurement of longitudinal mode competition in 405 nm (Al,In)GaN laser diodes,” Phys. Status Solidi C 6, S860–S863 (2009).
[Crossref]

T. Meyer, H. Braun, U. T. Schwarz, S. Tautz, M. Schillgalies, S. Lutgen, and U. Strauss, “Spectral dynamics of 405 nm (Al,In)GaN laser diodes grown on GaN and SiC substrate,” Opt. Express 16(10), 6833–6845 (2008).
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U. T. Schwarz, W. Wegscheider, A. Lell, and V. Härle, “Nitride-based in-plane laser diodes with vertical current path,” Proc. SPIE 5365, 267 (2004).
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Senoh, M.

S. Nakamura, M. Senoh, S.-I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, “Subband emissions of InGaN multi-quantum-well laser diodes under room-temperature continuous wave operation,” Appl. Phys. Lett. 70, 2753 (1997).
[Crossref]

S. Nakamura, M. Senoh, S.-I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, “Longitudinal mode spectra and ultrashort pulse generation of InGaN multiquantum well structure laser diodes,” Appl. Phys. Lett. 70, 616 (1997).
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S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, “Optical gain and carrier lifetime of InGaN multi-quantum well structure laser diodes,” Appl. Phys. Lett. 69, 1568 (1996).
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J. J. Wierer, J. Y. Tsao, and D. S. Sizov, “The potential of III-nitride laser diodes for solid-state lighting,” Phys. Status Solidi C 11(3–4), 674–677 (2014).
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J. J. Wierer, J. Y. Tsao, and D. S. Sizov, “Comparison between blue lasers and light-emitting diodes for future solid-state lighting,” Laser Photon. Rev. 7(6), 963–993 (2013).
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I. V. Smetanin and P. P. Vasil’ev, “Enhanced longitudinal mode spacing in blue-violet InGaN semiconductor lasers,” Appl. Phys. Lett. 100, 041113 (2012).
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U. Strauß, T. Hager, G. Brüderl, T. Wurm, A. Somers, C. Eichler, C. Vierheilig, A. Löffler, J. Ristic, and A. Avramescu, “Recent advances in c-plane GaN visible lasers,” Proc. SPIE 8986, 89861L (2014).
[Crossref]

Stojetz, B.

C. Vierheilig, C. Eichler, S. Tautz, A. Lell, J. Müller, F. Kopp, B. Stojetz, T. Hager, G. Brüderl, A. Avramescu, T. Lermer, J. Ristic, and U. Strauss, “Beyond blue pico laser: development of high power blue and low power direct green,” Proc. SPIE 8277, 82770K (2012).
[Crossref]

Strauß, U.

U. Strauß, T. Hager, G. Brüderl, T. Wurm, A. Somers, C. Eichler, C. Vierheilig, A. Löffler, J. Ristic, and A. Avramescu, “Recent advances in c-plane GaN visible lasers,” Proc. SPIE 8986, 89861L (2014).
[Crossref]

Strauss, U.

C. Vierheilig, C. Eichler, S. Tautz, A. Lell, J. Müller, F. Kopp, B. Stojetz, T. Hager, G. Brüderl, A. Avramescu, T. Lermer, J. Ristic, and U. Strauss, “Beyond blue pico laser: development of high power blue and low power direct green,” Proc. SPIE 8277, 82770K (2012).
[Crossref]

S. Lutgen, D. Dini, I. Pietzonka, S. Tautz, A. Breidenassel, A. Lell, A. Avramescu, C. Eichler, T. Lermer, J. Müller, G. Bruederl, A. Gomez-Iglesias, U. Strauss, W. G. Scheibenzuber, U. T. Schwarz, B. Pasenow, and S. Koch, “Recent results of blue and green InGaN laser diodes for laser projection,” Proc. SPIE 7953, 79530G (2011).
[Crossref]

T. Lermer, A. Gomez-Iglesias, M. Sabathil, J. Müller, S. Lutgen, U. Strauss, B. Pasenow, J. Hader, J. V. Moloney, S. W. Koch, W. Scheibenzuber, and U. T. Schwarz, “Gain of blue and cyan InGaN laser diodes,” Appl. Phys. Lett. 98, 021115 (2011).
[Crossref]

W. G. Scheibenzuber, U. T. Schwarz, T. Lermer, S. Lutgen, and U. Strauss, “Antiguiding factor of GaN-based laser diodes from UV to green,” Appl. Phys. Lett. 97, 021102 (2010).
[Crossref]

Strauß, U.

B. Schmidtke, H. Braun, U. T. Schwarz, D. Queren, M. Schillgalies, S. Lutgen, and U. Strauß, “Time resolved measurement of longitudinal mode competition in 405 nm (Al,In)GaN laser diodes,” Phys. Status Solidi C 6, S860–S863 (2009).
[Crossref]

D. Queren, A. Avramescu, G. Brüderl, A. Breidenassel, M. Schillgalies, S. Lutgen, and U. Strauß, “500 nm electrically driven InGaN based laser diodes,” Appl. Phys. Lett. 94, 081119 (2009).
[Crossref]

Strauss, U.

Sugimoto, Y.

S. Nakamura, M. Senoh, S.-I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, “Subband emissions of InGaN multi-quantum-well laser diodes under room-temperature continuous wave operation,” Appl. Phys. Lett. 70, 2753 (1997).
[Crossref]

S. Nakamura, M. Senoh, S.-I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, “Longitudinal mode spectra and ultrashort pulse generation of InGaN multiquantum well structure laser diodes,” Appl. Phys. Lett. 70, 616 (1997).
[Crossref]

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, “Optical gain and carrier lifetime of InGaN multi-quantum well structure laser diodes,” Appl. Phys. Lett. 69, 1568 (1996).
[Crossref]

Sulmoni, L.

W. G. Scheibenzuber, U. T. Schwarz, L. Sulmoni, J. Dorsaz, J.-F. Carlin, and N. Grandjean, “Recombination coefficients of GaN-based laser diodes,” J. Appl. Phys. 109, 093106 (2011).
[Crossref]

Sumitomo, T.

S. Takagi, Y. Enya, T. Kyono, M. Adachi, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, T. Nakamura, K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, and M. Ikeda, “High-power (over 100 mW) green laser diodes on semipolar {202̄1} GaN substrates operating at wavelengths beyond 530 nm,” Appl. Phys. Express 5, 082102 (2012).
[Crossref]

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm green lasing of InGaN based laser diodes on semi-polar {202̄1} free-standing GaN substrates,” Appl. Phys. Express 2, 082101 (2009).
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Sumiyoshi, K.

S. Takagi, Y. Enya, T. Kyono, M. Adachi, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, T. Nakamura, K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, and M. Ikeda, “High-power (over 100 mW) green laser diodes on semipolar {202̄1} GaN substrates operating at wavelengths beyond 530 nm,” Appl. Phys. Express 5, 082102 (2012).
[Crossref]

Suski, T.

P. Perlin, L. Marona, K. Holc, P. Wisniewski, T. Suski, M. Leszczynski, R. Czernecki, S. Najda, M. Zajac, and R. Kucharski, “InGaN laser diode mini-arrays,” Appl. Phys. Express 4, 062103 (2011).
[Crossref]

Takagi, S.

S. Takagi, Y. Enya, T. Kyono, M. Adachi, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, T. Nakamura, K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, and M. Ikeda, “High-power (over 100 mW) green laser diodes on semipolar {202̄1} GaN substrates operating at wavelengths beyond 530 nm,” Appl. Phys. Express 5, 082102 (2012).
[Crossref]

Takemoto, Y.

D. Ueda, K. Saito, T. Iwamura, Y. Takemoto, H. Yamatsu, T. Horigome, M. Oyamada, K. Hayashi, N. Tanabe, H. Miyamoto, A. Nakaoki, J. Horigome, H. Uchiyama, K. S. Yun, and S. Kobayashi, “Dynamic recording of 200 Gbytes in three-dimensional optical disk by a 405 nm wavelength picosecond laser,” Jap. J. Appl. Phys. 50, 032704 (2011).
[Crossref]

Takiguchi, Y.

S. Takagi, Y. Enya, T. Kyono, M. Adachi, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, T. Nakamura, K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, and M. Ikeda, “High-power (over 100 mW) green laser diodes on semipolar {202̄1} GaN substrates operating at wavelengths beyond 530 nm,” Appl. Phys. Express 5, 082102 (2012).
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Tanabe, N.

D. Ueda, K. Saito, T. Iwamura, Y. Takemoto, H. Yamatsu, T. Horigome, M. Oyamada, K. Hayashi, N. Tanabe, H. Miyamoto, A. Nakaoki, J. Horigome, H. Uchiyama, K. S. Yun, and S. Kobayashi, “Dynamic recording of 200 Gbytes in three-dimensional optical disk by a 405 nm wavelength picosecond laser,” Jap. J. Appl. Phys. 50, 032704 (2011).
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[Crossref]

Tautz, S.

C. Vierheilig, C. Eichler, S. Tautz, A. Lell, J. Müller, F. Kopp, B. Stojetz, T. Hager, G. Brüderl, A. Avramescu, T. Lermer, J. Ristic, and U. Strauss, “Beyond blue pico laser: development of high power blue and low power direct green,” Proc. SPIE 8277, 82770K (2012).
[Crossref]

S. Lutgen, D. Dini, I. Pietzonka, S. Tautz, A. Breidenassel, A. Lell, A. Avramescu, C. Eichler, T. Lermer, J. Müller, G. Bruederl, A. Gomez-Iglesias, U. Strauss, W. G. Scheibenzuber, U. T. Schwarz, B. Pasenow, and S. Koch, “Recent results of blue and green InGaN laser diodes for laser projection,” Proc. SPIE 7953, 79530G (2011).
[Crossref]

T. Meyer, H. Braun, U. T. Schwarz, S. Tautz, M. Schillgalies, S. Lutgen, and U. Strauss, “Spectral dynamics of 405 nm (Al,In)GaN laser diodes grown on GaN and SiC substrate,” Opt. Express 16(10), 6833–6845 (2008).
[Crossref] [PubMed]

Teramachi, Y.

M. Ohtsu and Y. Teramachi, “Analyses of mode partition and mode hopping in semiconductor lasers,” IEEE J. Quantum Electron. 25(1), 31 (1989).
[Crossref]

Tokuyama, S.

S. Takagi, Y. Enya, T. Kyono, M. Adachi, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, T. Nakamura, K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, and M. Ikeda, “High-power (over 100 mW) green laser diodes on semipolar {202̄1} GaN substrates operating at wavelengths beyond 530 nm,” Appl. Phys. Express 5, 082102 (2012).
[Crossref]

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm green lasing of InGaN based laser diodes on semi-polar {202̄1} free-standing GaN substrates,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Tredicce, J.

A. M. Yacomotti, L. Furfaro, X. Hachair, F. Pedachi, M. Giudici, J. Tredicce, J. Javaloyes, S. Balle, E. A. Viktorov, and P. Mandel, “Dynamics of multimode semiconductor lasers,” Phys. Rev. A 69(5), 053816 (2004).
[Crossref]

L. Furfaro, F. Pedachi, M. Giudici, X. Hachair, J. Tredicce, and S. Balle, “Mode-switching in semiconductor lasers,” IEEE J. Quantum Electron. 40(10), 1365 (2004).
[Crossref]

Tsao, J. Y.

J. J. Wierer, J. Y. Tsao, and D. S. Sizov, “The potential of III-nitride laser diodes for solid-state lighting,” Phys. Status Solidi C 11(3–4), 674–677 (2014).
[Crossref]

J. J. Wierer, J. Y. Tsao, and D. S. Sizov, “Comparison between blue lasers and light-emitting diodes for future solid-state lighting,” Laser Photon. Rev. 7(6), 963–993 (2013).
[Crossref]

Uchiyama, H.

D. Ueda, K. Saito, T. Iwamura, Y. Takemoto, H. Yamatsu, T. Horigome, M. Oyamada, K. Hayashi, N. Tanabe, H. Miyamoto, A. Nakaoki, J. Horigome, H. Uchiyama, K. S. Yun, and S. Kobayashi, “Dynamic recording of 200 Gbytes in three-dimensional optical disk by a 405 nm wavelength picosecond laser,” Jap. J. Appl. Phys. 50, 032704 (2011).
[Crossref]

Ueda, D.

D. Ueda, K. Saito, T. Iwamura, Y. Takemoto, H. Yamatsu, T. Horigome, M. Oyamada, K. Hayashi, N. Tanabe, H. Miyamoto, A. Nakaoki, J. Horigome, H. Uchiyama, K. S. Yun, and S. Kobayashi, “Dynamic recording of 200 Gbytes in three-dimensional optical disk by a 405 nm wavelength picosecond laser,” Jap. J. Appl. Phys. 50, 032704 (2011).
[Crossref]

Ueno, M.

S. Takagi, Y. Enya, T. Kyono, M. Adachi, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, T. Nakamura, K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, and M. Ikeda, “High-power (over 100 mW) green laser diodes on semipolar {202̄1} GaN substrates operating at wavelengths beyond 530 nm,” Appl. Phys. Express 5, 082102 (2012).
[Crossref]

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm green lasing of InGaN based laser diodes on semi-polar {202̄1} free-standing GaN substrates,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Ulrich, L.

L. Ulrich, “Whiter brights with lasers,” Spectrum, IEEE 50(11), 36–56 (2013).
[Crossref]

Vasil’ev, P. P.

I. V. Smetanin and P. P. Vasil’ev, “Enhanced longitudinal mode spacing in blue-violet InGaN semiconductor lasers,” Appl. Phys. Lett. 100, 041113 (2012).
[Crossref]

V. F. Olle, P. P. Vasil’ev, A. Wonfor, R. V. Penty, and I. H. White, “Ultrashort superradiant pulse generation from a GaN/InGaN heterostructure,” Opt. Express 20(7), 7035–7039 (2012).
[Crossref] [PubMed]

Vierheilig, C.

U. Strauß, T. Hager, G. Brüderl, T. Wurm, A. Somers, C. Eichler, C. Vierheilig, A. Löffler, J. Ristic, and A. Avramescu, “Recent advances in c-plane GaN visible lasers,” Proc. SPIE 8986, 89861L (2014).
[Crossref]

C. Vierheilig, C. Eichler, S. Tautz, A. Lell, J. Müller, F. Kopp, B. Stojetz, T. Hager, G. Brüderl, A. Avramescu, T. Lermer, J. Ristic, and U. Strauss, “Beyond blue pico laser: development of high power blue and low power direct green,” Proc. SPIE 8277, 82770K (2012).
[Crossref]

Viktorov, E. A.

A. M. Yacomotti, L. Furfaro, X. Hachair, F. Pedachi, M. Giudici, J. Tredicce, J. Javaloyes, S. Balle, E. A. Viktorov, and P. Mandel, “Dynamics of multimode semiconductor lasers,” Phys. Rev. A 69(5), 053816 (2004).
[Crossref]

Vurgaftman, I.

I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, “Band parameters for IIIV compound semiconductors and their alloys,” J. Appl. Phys. 89(11), 5815 (2001).
[Crossref]

Wagner, J.

K. Holc, G. Lükens, T. Weig, K. Köhler, J. Wagner, and U. T. Schwarz, “Gallium nitride laser diodes with integrated absorber: on the dynamics of self-pulsation,” Phys. Status Solidi C 11(3–4), 670–673 (2014).
[Crossref]

K. Holc, T. Weig, K. Köhler, J. Wagner, and U. T. Schwarz, “Impact of band structure and absorber dynamics on self-Q-switching in GaN-based multisection laser diodes at high reverse bias,” Appl. Phys. Express 6, 084101 (2013).
[Crossref]

Watanabe, H.

R. Koda, T. Oki, S. Kono, T. Miyajima, H. Watanabe, M. Kuramoto, M. Ikeda, and H. Yokoyama, “300 W peak power picosecond optical pulse generation by blue-violet GaInN mode-locked laser diode and semiconductor optical amplifier,” Appl. Phys. Express 5, 022702 (2012).
[Crossref]

S. Kono, H. Watanabe, R. Koda, T. Miyajima, and M. Kuramoto, “200-fs pulse generation from a GaInN semiconductor laser diode passively mode-locked in a dispersion-compensated external cavity,” Appl. Phys. Lett. 101, 081121 (2012).
[Crossref]

Wegscheider, W.

U. T. Schwarz, W. Wegscheider, A. Lell, and V. Härle, “Nitride-based in-plane laser diodes with vertical current path,” Proc. SPIE 5365, 267 (2004).
[Crossref]

Weig, T.

K. Holc, G. Lükens, T. Weig, K. Köhler, J. Wagner, and U. T. Schwarz, “Gallium nitride laser diodes with integrated absorber: on the dynamics of self-pulsation,” Phys. Status Solidi C 11(3–4), 670–673 (2014).
[Crossref]

K. Holc, T. Weig, K. Köhler, J. Wagner, and U. T. Schwarz, “Impact of band structure and absorber dynamics on self-Q-switching in GaN-based multisection laser diodes at high reverse bias,” Appl. Phys. Express 6, 084101 (2013).
[Crossref]

Weimar, A.

C. Eichler, S. Schad, F. Scholz, D. Hofstetter, S. Miller, A. Weimar, A. Lell, and V. Härle, “Observation of temperature-independent longitudinal-mode patterns in violet-blue InGaN-based laser diodes,” IEEE Phot. Techn. Lett. 17(9), 1782 (2005).
[Crossref]

White, I. H.

Wierer, J. J.

J. J. Wierer, J. Y. Tsao, and D. S. Sizov, “The potential of III-nitride laser diodes for solid-state lighting,” Phys. Status Solidi C 11(3–4), 674–677 (2014).
[Crossref]

J. J. Wierer, J. Y. Tsao, and D. S. Sizov, “Comparison between blue lasers and light-emitting diodes for future solid-state lighting,” Laser Photon. Rev. 7(6), 963–993 (2013).
[Crossref]

Wisniewski, P.

P. Perlin, L. Marona, K. Holc, P. Wisniewski, T. Suski, M. Leszczynski, R. Czernecki, S. Najda, M. Zajac, and R. Kucharski, “InGaN laser diode mini-arrays,” Appl. Phys. Express 4, 062103 (2011).
[Crossref]

Wonfor, A.

Wurm, T.

U. Strauß, T. Hager, G. Brüderl, T. Wurm, A. Somers, C. Eichler, C. Vierheilig, A. Löffler, J. Ristic, and A. Avramescu, “Recent advances in c-plane GaN visible lasers,” Proc. SPIE 8986, 89861L (2014).
[Crossref]

Yacomotti, A. M.

A. M. Yacomotti, L. Furfaro, X. Hachair, F. Pedachi, M. Giudici, J. Tredicce, J. Javaloyes, S. Balle, E. A. Viktorov, and P. Mandel, “Dynamics of multimode semiconductor lasers,” Phys. Rev. A 69(5), 053816 (2004).
[Crossref]

Yamada, M.

M. Ahmed and M. Yamada, “Influence of instantaneous mode competition on the dynamics of semiconductor lasers,” IEEE J. Quantum Electron. 38(6), 682 (2002).
[Crossref]

M. Ahmed, M. Yamada, and S. Abdulrhmann, “A multimode simulation model of mode-competition low-frequency noise in semiconductor lasers,” Fluct. Noise Lett. 1(3), L163 (2001).
[Crossref]

M. Yamada, “Theoretical analysis of nonlinear optical phenomena taking into account the beating vibration of the electron density in semiconductor lasers,” J. Appl. Phys. 66(1), 81–89 (1989).
[Crossref]

M. Yamada, “Theory of mode competition noise in semiconductor injection lasers,” IEEE J. Quantum Electron. 22(7), 1052 (1986).
[Crossref]

M. Yamada, “Transverse and longitudinal mode control in semiconductor injection lasers,” IEEE J. Quantum Electron. 19(9), 1365 (1983).
[Crossref]

M. Yamada, Theory of Semiconductor Lasers (Springer, 2014), Chap. 8.
[Crossref]

Yamada, T.

S. Nakamura, M. Senoh, S.-I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, “Longitudinal mode spectra and ultrashort pulse generation of InGaN multiquantum well structure laser diodes,” Appl. Phys. Lett. 70, 616 (1997).
[Crossref]

S. Nakamura, M. Senoh, S.-I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, “Subband emissions of InGaN multi-quantum-well laser diodes under room-temperature continuous wave operation,” Appl. Phys. Lett. 70, 2753 (1997).
[Crossref]

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, “Optical gain and carrier lifetime of InGaN multi-quantum well structure laser diodes,” Appl. Phys. Lett. 69, 1568 (1996).
[Crossref]

Yamamoto, Y.

S. Inoue, H. Ohzu, S. Machida, and Y. Yamamoto, “Quantum correlation between longitudinal-mode intensities in a multimode squeezed semiconductor laser,” Phys. Rev. A 46(5), 2757 (1992).
[Crossref] [PubMed]

Yamanaka, Y.

S. Takagi, Y. Enya, T. Kyono, M. Adachi, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, T. Nakamura, K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, and M. Ikeda, “High-power (over 100 mW) green laser diodes on semipolar {202̄1} GaN substrates operating at wavelengths beyond 530 nm,” Appl. Phys. Express 5, 082102 (2012).
[Crossref]

Yamatsu, H.

D. Ueda, K. Saito, T. Iwamura, Y. Takemoto, H. Yamatsu, T. Horigome, M. Oyamada, K. Hayashi, N. Tanabe, H. Miyamoto, A. Nakaoki, J. Horigome, H. Uchiyama, K. S. Yun, and S. Kobayashi, “Dynamic recording of 200 Gbytes in three-dimensional optical disk by a 405 nm wavelength picosecond laser,” Jap. J. Appl. Phys. 50, 032704 (2011).
[Crossref]

Yanamoto, T.

T. Miyoshi, S. Masui, T. Okada, T. Yanamoto, T. Kozaki, S.-I. Nagahama, and T. Mukai, “510–515 nm InGaN-based green laser diodes on c-plane GaN substrate,” Appl. Phys. Express 2, 062201 (2009).
[Crossref]

Yanashima, K.

S. Takagi, Y. Enya, T. Kyono, M. Adachi, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, T. Nakamura, K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, and M. Ikeda, “High-power (over 100 mW) green laser diodes on semipolar {202̄1} GaN substrates operating at wavelengths beyond 530 nm,” Appl. Phys. Express 5, 082102 (2012).
[Crossref]

Yano, M.

H. Ishikawa, M. Yano, and M. Takusagawa, “Mechanism of asymmetric longitudinal mode competition in In-GaAsP/InP lasers,” Appl. Phys. Lett. 40, 553 (1982).
[Crossref]

Yokoyama, H.

R. Koda, T. Oki, S. Kono, T. Miyajima, H. Watanabe, M. Kuramoto, M. Ikeda, and H. Yokoyama, “300 W peak power picosecond optical pulse generation by blue-violet GaInN mode-locked laser diode and semiconductor optical amplifier,” Appl. Phys. Express 5, 022702 (2012).
[Crossref]

Yoo, T. K.

S. H. Park, D. Ahn, E. H. Park, T. K. Yoo, and Y. T. Lee, “Many-body optical gain and intraband relaxation time of wurtzite InGaN/GaN quantum-well lasers and comparison with experiment,” Appl. Phys. Lett. 87, 044103 (2005).
[Crossref]

Yoshizumi, Y.

S. Takagi, Y. Enya, T. Kyono, M. Adachi, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, T. Nakamura, K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, and M. Ikeda, “High-power (over 100 mW) green laser diodes on semipolar {202̄1} GaN substrates operating at wavelengths beyond 530 nm,” Appl. Phys. Express 5, 082102 (2012).
[Crossref]

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm green lasing of InGaN based laser diodes on semi-polar {202̄1} free-standing GaN substrates,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Yun, K. S.

D. Ueda, K. Saito, T. Iwamura, Y. Takemoto, H. Yamatsu, T. Horigome, M. Oyamada, K. Hayashi, N. Tanabe, H. Miyamoto, A. Nakaoki, J. Horigome, H. Uchiyama, K. S. Yun, and S. Kobayashi, “Dynamic recording of 200 Gbytes in three-dimensional optical disk by a 405 nm wavelength picosecond laser,” Jap. J. Appl. Phys. 50, 032704 (2011).
[Crossref]

Zajac, M.

P. Perlin, L. Marona, K. Holc, P. Wisniewski, T. Suski, M. Leszczynski, R. Czernecki, S. Najda, M. Zajac, and R. Kucharski, “InGaN laser diode mini-arrays,” Appl. Phys. Express 4, 062103 (2011).
[Crossref]

Appl. Phys. Express (7)

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm green lasing of InGaN based laser diodes on semi-polar {202̄1} free-standing GaN substrates,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

T. Miyoshi, S. Masui, T. Okada, T. Yanamoto, T. Kozaki, S.-I. Nagahama, and T. Mukai, “510–515 nm InGaN-based green laser diodes on c-plane GaN substrate,” Appl. Phys. Express 2, 062201 (2009).
[Crossref]

P. Perlin, L. Marona, K. Holc, P. Wisniewski, T. Suski, M. Leszczynski, R. Czernecki, S. Najda, M. Zajac, and R. Kucharski, “InGaN laser diode mini-arrays,” Appl. Phys. Express 4, 062103 (2011).
[Crossref]

S. Takagi, Y. Enya, T. Kyono, M. Adachi, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, T. Nakamura, K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, and M. Ikeda, “High-power (over 100 mW) green laser diodes on semipolar {202̄1} GaN substrates operating at wavelengths beyond 530 nm,” Appl. Phys. Express 5, 082102 (2012).
[Crossref]

R. Koda, T. Oki, S. Kono, T. Miyajima, H. Watanabe, M. Kuramoto, M. Ikeda, and H. Yokoyama, “300 W peak power picosecond optical pulse generation by blue-violet GaInN mode-locked laser diode and semiconductor optical amplifier,” Appl. Phys. Express 5, 022702 (2012).
[Crossref]

K. Holc, T. Weig, K. Köhler, J. Wagner, and U. T. Schwarz, “Impact of band structure and absorber dynamics on self-Q-switching in GaN-based multisection laser diodes at high reverse bias,” Appl. Phys. Express 6, 084101 (2013).
[Crossref]

W. G. Scheibenzuber and U. T. Schwarz, “Unequal pumping of quantum wells in GaN-based laser diodes,” Appl. Phys. Express 5, 042103 (2012).
[Crossref]

Appl. Phys. Lett. (11)

I. V. Smetanin and P. P. Vasil’ev, “Enhanced longitudinal mode spacing in blue-violet InGaN semiconductor lasers,” Appl. Phys. Lett. 100, 041113 (2012).
[Crossref]

H. Ishikawa, M. Yano, and M. Takusagawa, “Mechanism of asymmetric longitudinal mode competition in In-GaAsP/InP lasers,” Appl. Phys. Lett. 40, 553 (1982).
[Crossref]

S. Nakamura, M. Senoh, S.-I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, “Longitudinal mode spectra and ultrashort pulse generation of InGaN multiquantum well structure laser diodes,” Appl. Phys. Lett. 70, 616 (1997).
[Crossref]

W. G. Scheibenzuber and U. T. Schwarz, “Fast self-heating in GaN-based laser diodes,” Appl. Phys. Lett. 98, 181110 (2011).
[Crossref]

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, “Optical gain and carrier lifetime of InGaN multi-quantum well structure laser diodes,” Appl. Phys. Lett. 69, 1568 (1996).
[Crossref]

S. Kono, H. Watanabe, R. Koda, T. Miyajima, and M. Kuramoto, “200-fs pulse generation from a GaInN semiconductor laser diode passively mode-locked in a dispersion-compensated external cavity,” Appl. Phys. Lett. 101, 081121 (2012).
[Crossref]

D. Queren, A. Avramescu, G. Brüderl, A. Breidenassel, M. Schillgalies, S. Lutgen, and U. Strauß, “500 nm electrically driven InGaN based laser diodes,” Appl. Phys. Lett. 94, 081119 (2009).
[Crossref]

T. Lermer, A. Gomez-Iglesias, M. Sabathil, J. Müller, S. Lutgen, U. Strauss, B. Pasenow, J. Hader, J. V. Moloney, S. W. Koch, W. Scheibenzuber, and U. T. Schwarz, “Gain of blue and cyan InGaN laser diodes,” Appl. Phys. Lett. 98, 021115 (2011).
[Crossref]

W. G. Scheibenzuber, U. T. Schwarz, T. Lermer, S. Lutgen, and U. Strauss, “Antiguiding factor of GaN-based laser diodes from UV to green,” Appl. Phys. Lett. 97, 021102 (2010).
[Crossref]

S. H. Park, D. Ahn, E. H. Park, T. K. Yoo, and Y. T. Lee, “Many-body optical gain and intraband relaxation time of wurtzite InGaN/GaN quantum-well lasers and comparison with experiment,” Appl. Phys. Lett. 87, 044103 (2005).
[Crossref]

S. Nakamura, M. Senoh, S.-I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, “Subband emissions of InGaN multi-quantum-well laser diodes under room-temperature continuous wave operation,” Appl. Phys. Lett. 70, 2753 (1997).
[Crossref]

Fluct. Noise Lett. (1)

M. Ahmed, M. Yamada, and S. Abdulrhmann, “A multimode simulation model of mode-competition low-frequency noise in semiconductor lasers,” Fluct. Noise Lett. 1(3), L163 (2001).
[Crossref]

IEEE J. Quantum Electron. (7)

M. Yamada, “Transverse and longitudinal mode control in semiconductor injection lasers,” IEEE J. Quantum Electron. 19(9), 1365 (1983).
[Crossref]

M. Yamada, “Theory of mode competition noise in semiconductor injection lasers,” IEEE J. Quantum Electron. 22(7), 1052 (1986).
[Crossref]

M. Ahmed and M. Yamada, “Influence of instantaneous mode competition on the dynamics of semiconductor lasers,” IEEE J. Quantum Electron. 38(6), 682 (2002).
[Crossref]

G. P. Agrawal, “Gain nonlinearities in semiconductor lasers: theory and application to distributed feedback lasers,” IEEE J. Quantum Electron. 23(6), 860–868 (1987).
[Crossref]

G. P. Agrawal, “Effect of gain and index nonlinearities on single-mode dynamics in semiconductor lasers,” IEEE J. Quantum Electron. 26(11), 1901–1909 (1990).
[Crossref]

M. Ohtsu and Y. Teramachi, “Analyses of mode partition and mode hopping in semiconductor lasers,” IEEE J. Quantum Electron. 25(1), 31 (1989).
[Crossref]

L. Furfaro, F. Pedachi, M. Giudici, X. Hachair, J. Tredicce, and S. Balle, “Mode-switching in semiconductor lasers,” IEEE J. Quantum Electron. 40(10), 1365 (2004).
[Crossref]

IEEE Phot. Techn. Lett. (1)

C. Eichler, S. Schad, F. Scholz, D. Hofstetter, S. Miller, A. Weimar, A. Lell, and V. Härle, “Observation of temperature-independent longitudinal-mode patterns in violet-blue InGaN-based laser diodes,” IEEE Phot. Techn. Lett. 17(9), 1782 (2005).
[Crossref]

J. Appl. Phys. (3)

M. Yamada, “Theoretical analysis of nonlinear optical phenomena taking into account the beating vibration of the electron density in semiconductor lasers,” J. Appl. Phys. 66(1), 81–89 (1989).
[Crossref]

W. G. Scheibenzuber, U. T. Schwarz, L. Sulmoni, J. Dorsaz, J.-F. Carlin, and N. Grandjean, “Recombination coefficients of GaN-based laser diodes,” J. Appl. Phys. 109, 093106 (2011).
[Crossref]

I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, “Band parameters for IIIV compound semiconductors and their alloys,” J. Appl. Phys. 89(11), 5815 (2001).
[Crossref]

Jap. J. Appl. Phys. (1)

D. Ueda, K. Saito, T. Iwamura, Y. Takemoto, H. Yamatsu, T. Horigome, M. Oyamada, K. Hayashi, N. Tanabe, H. Miyamoto, A. Nakaoki, J. Horigome, H. Uchiyama, K. S. Yun, and S. Kobayashi, “Dynamic recording of 200 Gbytes in three-dimensional optical disk by a 405 nm wavelength picosecond laser,” Jap. J. Appl. Phys. 50, 032704 (2011).
[Crossref]

Jpn. J. Appl. Phys. (2)

N. Ogasawara and R. Ito, “Longitudinal mode competition and asymmetric gain saturation in semiconductor injection lasers. I. Experiment,” Jpn. J. Appl. Phys. 27(4), 607–614 (1988).
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N. Ogasawara and R. Ito, “Longitudinal mode competition and asymmetric gain saturation in semiconductor injection lasers. II. Theory,” Jpn. J. Appl. Phys. 27(4), 615–626 (1988).
[Crossref]

Laser Photon. Rev. (1)

J. J. Wierer, J. Y. Tsao, and D. S. Sizov, “Comparison between blue lasers and light-emitting diodes for future solid-state lighting,” Laser Photon. Rev. 7(6), 963–993 (2013).
[Crossref]

Opt. Express (2)

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[Crossref]

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[Crossref]

S. Lutgen, D. Dini, I. Pietzonka, S. Tautz, A. Breidenassel, A. Lell, A. Avramescu, C. Eichler, T. Lermer, J. Müller, G. Bruederl, A. Gomez-Iglesias, U. Strauss, W. G. Scheibenzuber, U. T. Schwarz, B. Pasenow, and S. Koch, “Recent results of blue and green InGaN laser diodes for laser projection,” Proc. SPIE 7953, 79530G (2011).
[Crossref]

U. Strauß, T. Hager, G. Brüderl, T. Wurm, A. Somers, C. Eichler, C. Vierheilig, A. Löffler, J. Ristic, and A. Avramescu, “Recent advances in c-plane GaN visible lasers,” Proc. SPIE 8986, 89861L (2014).
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C. Vierheilig, C. Eichler, S. Tautz, A. Lell, J. Müller, F. Kopp, B. Stojetz, T. Hager, G. Brüderl, A. Avramescu, T. Lermer, J. Ristic, and U. Strauss, “Beyond blue pico laser: development of high power blue and low power direct green,” Proc. SPIE 8277, 82770K (2012).
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[Crossref]

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[Crossref]

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Figures (5)

Fig. 1:
Fig. 1: Experiments (left pane) and simulations (right pane) of the mode competition dynamics. In each case an experimental and simulated spectrochronogram is shown in combination with a time–integrated spectrum illustrating the longitudinal mode comb. (a)–(d): green LD showing mode clustering with indications of mode competition at I = 1.2Ith. (e)–(h): green LD with mode competition at I = 3Ith. (i)–(l): mode competition in a blue LD at I = 4Ith.
Fig. 2:
Fig. 2: Simulated temporal evolution (5 ns steps) of the total gain (black open dots) and the photon density (blue filled squares) for the longitudinal modes of a green LD at I = 2.5Ith. The black horizontal line corresponds to the modal gain at threshold. The local gain maxima exceeding the threshold condition move from shorter to longer wavelengths with the photon density following.
Fig. 3:
Fig. 3: Measurement (circles and squares) and simulation (dashed and solid lines) of the current dependence of the mode competition frequency of two 445 nm (blue coloring) and two 515 nm (green coloring) LDs. The blue dashed curve shows the simulated mode competition frequency for a blue LD and the green dashed and solid lines for the two green LDs with different cavity lengths.
Fig. 4:
Fig. 4: Transition from mode competition to mode clustering. Simulated spectrochronograms and spectra for a green LD at I = 1.5Ith. (a), (b) τin = 113fs, αag = 9: mode competition, (c), (d) τin = 113fs, αag = 3: single–mode operation, (e), (f) τin = 225fs, αag = 3: two stable modes (mode clustering).
Fig. 5:
Fig. 5: Normalized photon number (upper plots), total gain and gain terms (lower plots) at I = 1.5Ith for a green LD. The dots represent a single longitudinal mode. Besides the total gain (black, axis to the left), the self–saturation term BSp (magenta), the cross saturation terms ∑q DpqSq, ∑q HpqSq (blue and red) and the total gain saturation as a sum of these contributions (green) are plotted as a change in the gain Δg (axis to the right). Parameters in (a) – (c) are the same as in Fig. 4 and show their relevance for mode competition (a), single–mode operation (b), and mode clustering (c).

Tables (1)

Tables Icon

Table 1: Most relevant parameters for the simulation of the mode dynamics in blue and green LDs.

Equations (10)

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d S p d t = ( g ˜ p g ˜ th ) S p + β p N τ r ,
d N d t = η inj I q e N τ s p S p g ˜ p
g ˜ p = A p B S p q p ( D p q + H p q ) S q .
A p = a Γ V ( N N tr b V ( λ p λ 0 ) 2 ) ,
B = 9 2 π c 0 ε 0 n gr 2 λ p ( Γ τ in V ) 2 a | R cv | 2 ( N N S ) ,
D p q = 4 3 B ( 2 π c 0 τ in λ p 2 ) 2 ( λ p λ q ) 2 + 1
= 3 λ p Γ 2 τ in a | R cv | 2 ε 0 n gr 2 V 2 ( N N S ) λ p 2 2 π c 0 τ in ( λ p λ q ) 2 + ( λ p 2 2 π c 0 τ in ) 2 ,
H p q 3 λ p 2 8 π c 0 ( a Γ V ) 2 α ag ( N N tr ) λ q λ p .
FWHM D p q = λ p 2 π c 0 τ in .
R cv 2 = q e 2 m 0 2 ω 2 | M T | 2 ,

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