Abstract

We proposed a microring resonator (MRR) enhanced photodetector (PD) structure. Resonance wavelength enhanced by the MRR amplifies the PD response. At L-band wavelengths, responsivity was doubled for an ultra-short germanium PD of 4 µm employing the MRR structure. Data rates of up to 40 Gb/s were also demonstrated at 1600 nm.

© 2014 Optical Society of America

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2014 (3)

A. E.-J. Lim, J. Song, Q. Fang, C. Li, X. Tu, N. Duan, K. K. Chen, R. P.-C. Tern, and T.-Y. Liow, “Review of Silicon Photonics Foundry Efforts,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8300112 (2014).
[Crossref]

H. Byun, J. Bok, K. Cho, K. Cho, H. Choi, J. Choi, S. Choi, S. Han, S. Hong, S. Hyun, T. J. Jeong, H.-C. Ji, I.-S. Joe, B. Kim, D. Kim, J. Kim, J.-K. Kim, K. Kim, S.-G. Kim, D. Kong, B. Kuh, H. Kwon, B. Lee, H. Lee, K. Lee, S. Lee, K. Na, J. Nam, A. Nejadmalayeri, Y. Park, S. Parmar, J. Pyo, D. Shin, J. Shin, Y.- Shin, S.-D. Suh, H. Yoon, Y. Park, J. Choi, K.-H. Ha, and G. Jeong, “Bulk-Si photonics technology for DRAM interface,” Photonics Research 2(3), A25–A33 (2014).
[Crossref]

J. Song, X. Luo, X. Tu, L. Jia, Q. Fang, T.-Y. Liow, M. Yu, and G.-Q. Lo, “Three-dimensional (3D) monolithically integrated photodetector and WDM receiver based on bulk silicon wafer,” Opt. Express 22(16), 19546–19554 (2014).
[Crossref]

2013 (5)

2012 (2)

J. Song, X. Luo, X. Tu, M. K. Park, J. S. Kee, H. Zhang, M. Yu, G. Q. Lo, and D. L. Kwong, “Electrical tracing-assisted dual-microring label‑free optical bio/chemical sensors,” Opt. Express 20(4), 4189–4197 (2012).
[Crossref] [PubMed]

D. J. Thomson, F. Y. Gardes, J.-M. Fedeli, S. Zlatanovic, Y. Hu, B. P. P. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett. 24(4), 234–236 (2012).
[Crossref]

2011 (3)

2010 (1)

T. Y. Liow, K. W. Ang, Q. Fang, J. F. Song, Y. Z. Xiong, M. B. Yu, G. Q. Lo, and D. L. Kwong, “Silicon modulators and germanium photodetectors on SOI: Monolithic integration, compatibility, and performance optimization,” IEEE J. Sel. Top. Quantum Electron. 16(1), 307–315 (2010).
[Crossref]

2009 (3)

2008 (3)

J. F. Song, S. H. Tao, Q. Fang, T. Y. Liow, M. B. Yu, G. Q. Lo, and D. L. Kwong, “Thermo-optical enhanced silicon wire interleavers,” IEEE Photon. Technol. Lett. 20(24), 2165–2167 (2008).
[Crossref]

J. Song, H. Zhao, Q. Fang, S. H. Tao, T. Y. Liow, M. B. Yu, G. Q. Lo, and D. L. Kwong, “Effective thermo-optical enhanced cross-ring resonator MZI interleavers on SOI,” Opt. Express 16(26), 21476–21482 (2008).
[Crossref] [PubMed]

M. Casalino, L. Sirleto, L. Moretti, and I. Rendina, “A silicon compatible resonant cavity enhanced photodetector working at 1.55 µm,” Semicond. Sci. Technol. 23(7), 075001 (2008).
[Crossref]

2007 (1)

2005 (1)

O. I. Dosunmu, D. D. Cannon, M. K. Emsley, L. C. Kimerling, and M. Unlu, “High-speed resonant cavity enhanced Ge photodetectors on reflecting Si substrates for 1550-nm operation,” IEEE Photon. Technol. Lett. 17(1), 175–177 (2005).
[Crossref]

Alduino, D.

Alic, N.

D. J. Thomson, F. Y. Gardes, J.-M. Fedeli, S. Zlatanovic, Y. Hu, B. P. P. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett. 24(4), 234–236 (2012).
[Crossref]

Ang, K. W.

T. Y. Liow, K. W. Ang, Q. Fang, J. F. Song, Y. Z. Xiong, M. B. Yu, G. Q. Lo, and D. L. Kwong, “Silicon modulators and germanium photodetectors on SOI: Monolithic integration, compatibility, and performance optimization,” IEEE J. Sel. Top. Quantum Electron. 16(1), 307–315 (2010).
[Crossref]

Asghari, M.

Audet, R. M.

Balram, K. C.

Barkai, A.

Bok, J.

H. Byun, J. Bok, K. Cho, K. Cho, H. Choi, J. Choi, S. Choi, S. Han, S. Hong, S. Hyun, T. J. Jeong, H.-C. Ji, I.-S. Joe, B. Kim, D. Kim, J. Kim, J.-K. Kim, K. Kim, S.-G. Kim, D. Kong, B. Kuh, H. Kwon, B. Lee, H. Lee, K. Lee, S. Lee, K. Na, J. Nam, A. Nejadmalayeri, Y. Park, S. Parmar, J. Pyo, D. Shin, J. Shin, Y.- Shin, S.-D. Suh, H. Yoon, Y. Park, J. Choi, K.-H. Ha, and G. Jeong, “Bulk-Si photonics technology for DRAM interface,” Photonics Research 2(3), A25–A33 (2014).
[Crossref]

Brongersma, M. L.

Byun, H.

H. Byun, J. Bok, K. Cho, K. Cho, H. Choi, J. Choi, S. Choi, S. Han, S. Hong, S. Hyun, T. J. Jeong, H.-C. Ji, I.-S. Joe, B. Kim, D. Kim, J. Kim, J.-K. Kim, K. Kim, S.-G. Kim, D. Kong, B. Kuh, H. Kwon, B. Lee, H. Lee, K. Lee, S. Lee, K. Na, J. Nam, A. Nejadmalayeri, Y. Park, S. Parmar, J. Pyo, D. Shin, J. Shin, Y.- Shin, S.-D. Suh, H. Yoon, Y. Park, J. Choi, K.-H. Ha, and G. Jeong, “Bulk-Si photonics technology for DRAM interface,” Photonics Research 2(3), A25–A33 (2014).
[Crossref]

Cai, H.

Q. Fang, J. F. Song, T. Y. Liow, H. Cai, M. B. Yu, G. Q. Lo, and D. L. Kwong, “Ultralow power silicon photonics thermo-optic switch with suspended phase arms,” IEEE Photon. Technol. Lett. 23(8), 525–527 (2011).
[Crossref]

Cannon, D. D.

O. I. Dosunmu, D. D. Cannon, M. K. Emsley, L. C. Kimerling, and M. Unlu, “High-speed resonant cavity enhanced Ge photodetectors on reflecting Si substrates for 1550-nm operation,” IEEE Photon. Technol. Lett. 17(1), 175–177 (2005).
[Crossref]

Casalino, M.

M. Casalino, L. Sirleto, L. Moretti, and I. Rendina, “A silicon compatible resonant cavity enhanced photodetector working at 1.55 µm,” Semicond. Sci. Technol. 23(7), 075001 (2008).
[Crossref]

Cassan, E.

Chen, K. K.

A. E.-J. Lim, J. Song, Q. Fang, C. Li, X. Tu, N. Duan, K. K. Chen, R. P.-C. Tern, and T.-Y. Liow, “Review of Silicon Photonics Foundry Efforts,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8300112 (2014).
[Crossref]

Chetrit, Y.

Cho, K.

H. Byun, J. Bok, K. Cho, K. Cho, H. Choi, J. Choi, S. Choi, S. Han, S. Hong, S. Hyun, T. J. Jeong, H.-C. Ji, I.-S. Joe, B. Kim, D. Kim, J. Kim, J.-K. Kim, K. Kim, S.-G. Kim, D. Kong, B. Kuh, H. Kwon, B. Lee, H. Lee, K. Lee, S. Lee, K. Na, J. Nam, A. Nejadmalayeri, Y. Park, S. Parmar, J. Pyo, D. Shin, J. Shin, Y.- Shin, S.-D. Suh, H. Yoon, Y. Park, J. Choi, K.-H. Ha, and G. Jeong, “Bulk-Si photonics technology for DRAM interface,” Photonics Research 2(3), A25–A33 (2014).
[Crossref]

H. Byun, J. Bok, K. Cho, K. Cho, H. Choi, J. Choi, S. Choi, S. Han, S. Hong, S. Hyun, T. J. Jeong, H.-C. Ji, I.-S. Joe, B. Kim, D. Kim, J. Kim, J.-K. Kim, K. Kim, S.-G. Kim, D. Kong, B. Kuh, H. Kwon, B. Lee, H. Lee, K. Lee, S. Lee, K. Na, J. Nam, A. Nejadmalayeri, Y. Park, S. Parmar, J. Pyo, D. Shin, J. Shin, Y.- Shin, S.-D. Suh, H. Yoon, Y. Park, J. Choi, K.-H. Ha, and G. Jeong, “Bulk-Si photonics technology for DRAM interface,” Photonics Research 2(3), A25–A33 (2014).
[Crossref]

Choi, H.

H. Byun, J. Bok, K. Cho, K. Cho, H. Choi, J. Choi, S. Choi, S. Han, S. Hong, S. Hyun, T. J. Jeong, H.-C. Ji, I.-S. Joe, B. Kim, D. Kim, J. Kim, J.-K. Kim, K. Kim, S.-G. Kim, D. Kong, B. Kuh, H. Kwon, B. Lee, H. Lee, K. Lee, S. Lee, K. Na, J. Nam, A. Nejadmalayeri, Y. Park, S. Parmar, J. Pyo, D. Shin, J. Shin, Y.- Shin, S.-D. Suh, H. Yoon, Y. Park, J. Choi, K.-H. Ha, and G. Jeong, “Bulk-Si photonics technology for DRAM interface,” Photonics Research 2(3), A25–A33 (2014).
[Crossref]

Choi, J.

H. Byun, J. Bok, K. Cho, K. Cho, H. Choi, J. Choi, S. Choi, S. Han, S. Hong, S. Hyun, T. J. Jeong, H.-C. Ji, I.-S. Joe, B. Kim, D. Kim, J. Kim, J.-K. Kim, K. Kim, S.-G. Kim, D. Kong, B. Kuh, H. Kwon, B. Lee, H. Lee, K. Lee, S. Lee, K. Na, J. Nam, A. Nejadmalayeri, Y. Park, S. Parmar, J. Pyo, D. Shin, J. Shin, Y.- Shin, S.-D. Suh, H. Yoon, Y. Park, J. Choi, K.-H. Ha, and G. Jeong, “Bulk-Si photonics technology for DRAM interface,” Photonics Research 2(3), A25–A33 (2014).
[Crossref]

H. Byun, J. Bok, K. Cho, K. Cho, H. Choi, J. Choi, S. Choi, S. Han, S. Hong, S. Hyun, T. J. Jeong, H.-C. Ji, I.-S. Joe, B. Kim, D. Kim, J. Kim, J.-K. Kim, K. Kim, S.-G. Kim, D. Kong, B. Kuh, H. Kwon, B. Lee, H. Lee, K. Lee, S. Lee, K. Na, J. Nam, A. Nejadmalayeri, Y. Park, S. Parmar, J. Pyo, D. Shin, J. Shin, Y.- Shin, S.-D. Suh, H. Yoon, Y. Park, J. Choi, K.-H. Ha, and G. Jeong, “Bulk-Si photonics technology for DRAM interface,” Photonics Research 2(3), A25–A33 (2014).
[Crossref]

Choi, S.

H. Byun, J. Bok, K. Cho, K. Cho, H. Choi, J. Choi, S. Choi, S. Han, S. Hong, S. Hyun, T. J. Jeong, H.-C. Ji, I.-S. Joe, B. Kim, D. Kim, J. Kim, J.-K. Kim, K. Kim, S.-G. Kim, D. Kong, B. Kuh, H. Kwon, B. Lee, H. Lee, K. Lee, S. Lee, K. Na, J. Nam, A. Nejadmalayeri, Y. Park, S. Parmar, J. Pyo, D. Shin, J. Shin, Y.- Shin, S.-D. Suh, H. Yoon, Y. Park, J. Choi, K.-H. Ha, and G. Jeong, “Bulk-Si photonics technology for DRAM interface,” Photonics Research 2(3), A25–A33 (2014).
[Crossref]

Cohen, O.

Cohen, R.

Crozat, P.

Damlencourt, J. F.

Ding, L.

Dong, P.

Dosunmu, O.

Dosunmu, O. I.

O. I. Dosunmu, D. D. Cannon, M. K. Emsley, L. C. Kimerling, and M. Unlu, “High-speed resonant cavity enhanced Ge photodetectors on reflecting Si substrates for 1550-nm operation,” IEEE Photon. Technol. Lett. 17(1), 175–177 (2005).
[Crossref]

Duan, N.

A. E.-J. Lim, J. Song, Q. Fang, C. Li, X. Tu, N. Duan, K. K. Chen, R. P.-C. Tern, and T.-Y. Liow, “Review of Silicon Photonics Foundry Efforts,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8300112 (2014).
[Crossref]

T.-Y. Liow, J. Song, X. Tu, A.-J. Lim, Q. Fang, N. Duan, M. Yu, and G.-Q. Lo, “Silicon Optical Interconnect Device Technologies for 40 Gb/s and Beyond,” IEEE J. Sel. Top. Quantum Electron. 19(2), 8200312 (2013).
[Crossref]

A. E.-J. Lim, T.-Y. Liow, F. Qing, N. Duan, L. Ding, M. Yu, G.-Q. Lo, and D.-L. Kwong, “Novel Evanescent-Coupled Germanium Electro-Absorption Modulator Featuring Monolithic Integration with Germanium p-i-n Photodetector,” Opt. Express 19(6), 5040–5046 (2011).
[Crossref] [PubMed]

Elek, N.

Emsley, M. K.

O. I. Dosunmu, D. D. Cannon, M. K. Emsley, L. C. Kimerling, and M. Unlu, “High-speed resonant cavity enhanced Ge photodetectors on reflecting Si substrates for 1550-nm operation,” IEEE Photon. Technol. Lett. 17(1), 175–177 (2005).
[Crossref]

Fang, Q.

A. E.-J. Lim, J. Song, Q. Fang, C. Li, X. Tu, N. Duan, K. K. Chen, R. P.-C. Tern, and T.-Y. Liow, “Review of Silicon Photonics Foundry Efforts,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8300112 (2014).
[Crossref]

J. Song, X. Luo, X. Tu, L. Jia, Q. Fang, T.-Y. Liow, M. Yu, and G.-Q. Lo, “Three-dimensional (3D) monolithically integrated photodetector and WDM receiver based on bulk silicon wafer,” Opt. Express 22(16), 19546–19554 (2014).
[Crossref]

X. Tu, T.-Y. Liow, J. Song, X. Luo, Q. Fang, M. Yu, and G.-Q. Lo, “50-Gb/s silicon optical modulator with traveling-wave electrodes,” Opt. Express 21(10), 12776–12782 (2013).
[Crossref] [PubMed]

T.-Y. Liow, J. Song, X. Tu, A.-J. Lim, Q. Fang, N. Duan, M. Yu, and G.-Q. Lo, “Silicon Optical Interconnect Device Technologies for 40 Gb/s and Beyond,” IEEE J. Sel. Top. Quantum Electron. 19(2), 8200312 (2013).
[Crossref]

Q. Fang, L. Jia, J. Song, A. E. Lim, X. Tu, X. Luo, M. Yu, and G. Lo, “Demonstration of a vertical pin Ge-on-Si photo-detector on a wet-etched Si recess,” Opt. Express 21(20), 23325–23330 (2013).
[Crossref] [PubMed]

J. Song, X. Luo, J. S. Kee, K. Han, C. Li, M. K. Park, X. Tu, H. Zhang, Q. Fang, L. Jia, Y. J. Yoon, T. Y. Liow, M. Yu, and G. Q. Lo, “Silicon-based optoelectronic integrated circuit for label-free bio/chemical sensor,” Opt. Express 21(15), 17931–17940 (2013).
[Crossref] [PubMed]

Q. Fang, J. F. Song, T. Y. Liow, H. Cai, M. B. Yu, G. Q. Lo, and D. L. Kwong, “Ultralow power silicon photonics thermo-optic switch with suspended phase arms,” IEEE Photon. Technol. Lett. 23(8), 525–527 (2011).
[Crossref]

T. Y. Liow, K. W. Ang, Q. Fang, J. F. Song, Y. Z. Xiong, M. B. Yu, G. Q. Lo, and D. L. Kwong, “Silicon modulators and germanium photodetectors on SOI: Monolithic integration, compatibility, and performance optimization,” IEEE J. Sel. Top. Quantum Electron. 16(1), 307–315 (2010).
[Crossref]

J. F. Song, S. H. Tao, Q. Fang, T. Y. Liow, M. B. Yu, G. Q. Lo, and D. L. Kwong, “Thermo-optical enhanced silicon wire interleavers,” IEEE Photon. Technol. Lett. 20(24), 2165–2167 (2008).
[Crossref]

J. Song, H. Zhao, Q. Fang, S. H. Tao, T. Y. Liow, M. B. Yu, G. Q. Lo, and D. L. Kwong, “Effective thermo-optical enhanced cross-ring resonator MZI interleavers on SOI,” Opt. Express 16(26), 21476–21482 (2008).
[Crossref] [PubMed]

Fedeli, J.-M.

D. J. Thomson, F. Y. Gardes, J.-M. Fedeli, S. Zlatanovic, Y. Hu, B. P. P. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett. 24(4), 234–236 (2012).
[Crossref]

Fédéli, J. M.

Feng, D.

Gardes, F. Y.

D. J. Thomson, F. Y. Gardes, J.-M. Fedeli, S. Zlatanovic, Y. Hu, B. P. P. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett. 24(4), 234–236 (2012).
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Ha, K.-H.

H. Byun, J. Bok, K. Cho, K. Cho, H. Choi, J. Choi, S. Choi, S. Han, S. Hong, S. Hyun, T. J. Jeong, H.-C. Ji, I.-S. Joe, B. Kim, D. Kim, J. Kim, J.-K. Kim, K. Kim, S.-G. Kim, D. Kong, B. Kuh, H. Kwon, B. Lee, H. Lee, K. Lee, S. Lee, K. Na, J. Nam, A. Nejadmalayeri, Y. Park, S. Parmar, J. Pyo, D. Shin, J. Shin, Y.- Shin, S.-D. Suh, H. Yoon, Y. Park, J. Choi, K.-H. Ha, and G. Jeong, “Bulk-Si photonics technology for DRAM interface,” Photonics Research 2(3), A25–A33 (2014).
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Han, K.

Han, S.

H. Byun, J. Bok, K. Cho, K. Cho, H. Choi, J. Choi, S. Choi, S. Han, S. Hong, S. Hyun, T. J. Jeong, H.-C. Ji, I.-S. Joe, B. Kim, D. Kim, J. Kim, J.-K. Kim, K. Kim, S.-G. Kim, D. Kong, B. Kuh, H. Kwon, B. Lee, H. Lee, K. Lee, S. Lee, K. Na, J. Nam, A. Nejadmalayeri, Y. Park, S. Parmar, J. Pyo, D. Shin, J. Shin, Y.- Shin, S.-D. Suh, H. Yoon, Y. Park, J. Choi, K.-H. Ha, and G. Jeong, “Bulk-Si photonics technology for DRAM interface,” Photonics Research 2(3), A25–A33 (2014).
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Hong, S.

H. Byun, J. Bok, K. Cho, K. Cho, H. Choi, J. Choi, S. Choi, S. Han, S. Hong, S. Hyun, T. J. Jeong, H.-C. Ji, I.-S. Joe, B. Kim, D. Kim, J. Kim, J.-K. Kim, K. Kim, S.-G. Kim, D. Kong, B. Kuh, H. Kwon, B. Lee, H. Lee, K. Lee, S. Lee, K. Na, J. Nam, A. Nejadmalayeri, Y. Park, S. Parmar, J. Pyo, D. Shin, J. Shin, Y.- Shin, S.-D. Suh, H. Yoon, Y. Park, J. Choi, K.-H. Ha, and G. Jeong, “Bulk-Si photonics technology for DRAM interface,” Photonics Research 2(3), A25–A33 (2014).
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Howe, R. T.

Hu, Y.

D. J. Thomson, F. Y. Gardes, J.-M. Fedeli, S. Zlatanovic, Y. Hu, B. P. P. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett. 24(4), 234–236 (2012).
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Hyun, S.

H. Byun, J. Bok, K. Cho, K. Cho, H. Choi, J. Choi, S. Choi, S. Han, S. Hong, S. Hyun, T. J. Jeong, H.-C. Ji, I.-S. Joe, B. Kim, D. Kim, J. Kim, J.-K. Kim, K. Kim, S.-G. Kim, D. Kong, B. Kuh, H. Kwon, B. Lee, H. Lee, K. Lee, S. Lee, K. Na, J. Nam, A. Nejadmalayeri, Y. Park, S. Parmar, J. Pyo, D. Shin, J. Shin, Y.- Shin, S.-D. Suh, H. Yoon, Y. Park, J. Choi, K.-H. Ha, and G. Jeong, “Bulk-Si photonics technology for DRAM interface,” Photonics Research 2(3), A25–A33 (2014).
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Izhaky, N.

Jain, J. R.

Jeong, G.

H. Byun, J. Bok, K. Cho, K. Cho, H. Choi, J. Choi, S. Choi, S. Han, S. Hong, S. Hyun, T. J. Jeong, H.-C. Ji, I.-S. Joe, B. Kim, D. Kim, J. Kim, J.-K. Kim, K. Kim, S.-G. Kim, D. Kong, B. Kuh, H. Kwon, B. Lee, H. Lee, K. Lee, S. Lee, K. Na, J. Nam, A. Nejadmalayeri, Y. Park, S. Parmar, J. Pyo, D. Shin, J. Shin, Y.- Shin, S.-D. Suh, H. Yoon, Y. Park, J. Choi, K.-H. Ha, and G. Jeong, “Bulk-Si photonics technology for DRAM interface,” Photonics Research 2(3), A25–A33 (2014).
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H. Byun, J. Bok, K. Cho, K. Cho, H. Choi, J. Choi, S. Choi, S. Han, S. Hong, S. Hyun, T. J. Jeong, H.-C. Ji, I.-S. Joe, B. Kim, D. Kim, J. Kim, J.-K. Kim, K. Kim, S.-G. Kim, D. Kong, B. Kuh, H. Kwon, B. Lee, H. Lee, K. Lee, S. Lee, K. Na, J. Nam, A. Nejadmalayeri, Y. Park, S. Parmar, J. Pyo, D. Shin, J. Shin, Y.- Shin, S.-D. Suh, H. Yoon, Y. Park, J. Choi, K.-H. Ha, and G. Jeong, “Bulk-Si photonics technology for DRAM interface,” Photonics Research 2(3), A25–A33 (2014).
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H. Byun, J. Bok, K. Cho, K. Cho, H. Choi, J. Choi, S. Choi, S. Han, S. Hong, S. Hyun, T. J. Jeong, H.-C. Ji, I.-S. Joe, B. Kim, D. Kim, J. Kim, J.-K. Kim, K. Kim, S.-G. Kim, D. Kong, B. Kuh, H. Kwon, B. Lee, H. Lee, K. Lee, S. Lee, K. Na, J. Nam, A. Nejadmalayeri, Y. Park, S. Parmar, J. Pyo, D. Shin, J. Shin, Y.- Shin, S.-D. Suh, H. Yoon, Y. Park, J. Choi, K.-H. Ha, and G. Jeong, “Bulk-Si photonics technology for DRAM interface,” Photonics Research 2(3), A25–A33 (2014).
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Jia, L.

Joe, I.-S.

H. Byun, J. Bok, K. Cho, K. Cho, H. Choi, J. Choi, S. Choi, S. Han, S. Hong, S. Hyun, T. J. Jeong, H.-C. Ji, I.-S. Joe, B. Kim, D. Kim, J. Kim, J.-K. Kim, K. Kim, S.-G. Kim, D. Kong, B. Kuh, H. Kwon, B. Lee, H. Lee, K. Lee, S. Lee, K. Na, J. Nam, A. Nejadmalayeri, Y. Park, S. Parmar, J. Pyo, D. Shin, J. Shin, Y.- Shin, S.-D. Suh, H. Yoon, Y. Park, J. Choi, K.-H. Ha, and G. Jeong, “Bulk-Si photonics technology for DRAM interface,” Photonics Research 2(3), A25–A33 (2014).
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Kee, J. S.

Kim, B.

H. Byun, J. Bok, K. Cho, K. Cho, H. Choi, J. Choi, S. Choi, S. Han, S. Hong, S. Hyun, T. J. Jeong, H.-C. Ji, I.-S. Joe, B. Kim, D. Kim, J. Kim, J.-K. Kim, K. Kim, S.-G. Kim, D. Kong, B. Kuh, H. Kwon, B. Lee, H. Lee, K. Lee, S. Lee, K. Na, J. Nam, A. Nejadmalayeri, Y. Park, S. Parmar, J. Pyo, D. Shin, J. Shin, Y.- Shin, S.-D. Suh, H. Yoon, Y. Park, J. Choi, K.-H. Ha, and G. Jeong, “Bulk-Si photonics technology for DRAM interface,” Photonics Research 2(3), A25–A33 (2014).
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Kim, D.

H. Byun, J. Bok, K. Cho, K. Cho, H. Choi, J. Choi, S. Choi, S. Han, S. Hong, S. Hyun, T. J. Jeong, H.-C. Ji, I.-S. Joe, B. Kim, D. Kim, J. Kim, J.-K. Kim, K. Kim, S.-G. Kim, D. Kong, B. Kuh, H. Kwon, B. Lee, H. Lee, K. Lee, S. Lee, K. Na, J. Nam, A. Nejadmalayeri, Y. Park, S. Parmar, J. Pyo, D. Shin, J. Shin, Y.- Shin, S.-D. Suh, H. Yoon, Y. Park, J. Choi, K.-H. Ha, and G. Jeong, “Bulk-Si photonics technology for DRAM interface,” Photonics Research 2(3), A25–A33 (2014).
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H. Byun, J. Bok, K. Cho, K. Cho, H. Choi, J. Choi, S. Choi, S. Han, S. Hong, S. Hyun, T. J. Jeong, H.-C. Ji, I.-S. Joe, B. Kim, D. Kim, J. Kim, J.-K. Kim, K. Kim, S.-G. Kim, D. Kong, B. Kuh, H. Kwon, B. Lee, H. Lee, K. Lee, S. Lee, K. Na, J. Nam, A. Nejadmalayeri, Y. Park, S. Parmar, J. Pyo, D. Shin, J. Shin, Y.- Shin, S.-D. Suh, H. Yoon, Y. Park, J. Choi, K.-H. Ha, and G. Jeong, “Bulk-Si photonics technology for DRAM interface,” Photonics Research 2(3), A25–A33 (2014).
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H. Byun, J. Bok, K. Cho, K. Cho, H. Choi, J. Choi, S. Choi, S. Han, S. Hong, S. Hyun, T. J. Jeong, H.-C. Ji, I.-S. Joe, B. Kim, D. Kim, J. Kim, J.-K. Kim, K. Kim, S.-G. Kim, D. Kong, B. Kuh, H. Kwon, B. Lee, H. Lee, K. Lee, S. Lee, K. Na, J. Nam, A. Nejadmalayeri, Y. Park, S. Parmar, J. Pyo, D. Shin, J. Shin, Y.- Shin, S.-D. Suh, H. Yoon, Y. Park, J. Choi, K.-H. Ha, and G. Jeong, “Bulk-Si photonics technology for DRAM interface,” Photonics Research 2(3), A25–A33 (2014).
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H. Byun, J. Bok, K. Cho, K. Cho, H. Choi, J. Choi, S. Choi, S. Han, S. Hong, S. Hyun, T. J. Jeong, H.-C. Ji, I.-S. Joe, B. Kim, D. Kim, J. Kim, J.-K. Kim, K. Kim, S.-G. Kim, D. Kong, B. Kuh, H. Kwon, B. Lee, H. Lee, K. Lee, S. Lee, K. Na, J. Nam, A. Nejadmalayeri, Y. Park, S. Parmar, J. Pyo, D. Shin, J. Shin, Y.- Shin, S.-D. Suh, H. Yoon, Y. Park, J. Choi, K.-H. Ha, and G. Jeong, “Bulk-Si photonics technology for DRAM interface,” Photonics Research 2(3), A25–A33 (2014).
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H. Byun, J. Bok, K. Cho, K. Cho, H. Choi, J. Choi, S. Choi, S. Han, S. Hong, S. Hyun, T. J. Jeong, H.-C. Ji, I.-S. Joe, B. Kim, D. Kim, J. Kim, J.-K. Kim, K. Kim, S.-G. Kim, D. Kong, B. Kuh, H. Kwon, B. Lee, H. Lee, K. Lee, S. Lee, K. Na, J. Nam, A. Nejadmalayeri, Y. Park, S. Parmar, J. Pyo, D. Shin, J. Shin, Y.- Shin, S.-D. Suh, H. Yoon, Y. Park, J. Choi, K.-H. Ha, and G. Jeong, “Bulk-Si photonics technology for DRAM interface,” Photonics Research 2(3), A25–A33 (2014).
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H. Byun, J. Bok, K. Cho, K. Cho, H. Choi, J. Choi, S. Choi, S. Han, S. Hong, S. Hyun, T. J. Jeong, H.-C. Ji, I.-S. Joe, B. Kim, D. Kim, J. Kim, J.-K. Kim, K. Kim, S.-G. Kim, D. Kong, B. Kuh, H. Kwon, B. Lee, H. Lee, K. Lee, S. Lee, K. Na, J. Nam, A. Nejadmalayeri, Y. Park, S. Parmar, J. Pyo, D. Shin, J. Shin, Y.- Shin, S.-D. Suh, H. Yoon, Y. Park, J. Choi, K.-H. Ha, and G. Jeong, “Bulk-Si photonics technology for DRAM interface,” Photonics Research 2(3), A25–A33 (2014).
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H. Byun, J. Bok, K. Cho, K. Cho, H. Choi, J. Choi, S. Choi, S. Han, S. Hong, S. Hyun, T. J. Jeong, H.-C. Ji, I.-S. Joe, B. Kim, D. Kim, J. Kim, J.-K. Kim, K. Kim, S.-G. Kim, D. Kong, B. Kuh, H. Kwon, B. Lee, H. Lee, K. Lee, S. Lee, K. Na, J. Nam, A. Nejadmalayeri, Y. Park, S. Parmar, J. Pyo, D. Shin, J. Shin, Y.- Shin, S.-D. Suh, H. Yoon, Y. Park, J. Choi, K.-H. Ha, and G. Jeong, “Bulk-Si photonics technology for DRAM interface,” Photonics Research 2(3), A25–A33 (2014).
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D. J. Thomson, F. Y. Gardes, J.-M. Fedeli, S. Zlatanovic, Y. Hu, B. P. P. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett. 24(4), 234–236 (2012).
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Kwon, H.

H. Byun, J. Bok, K. Cho, K. Cho, H. Choi, J. Choi, S. Choi, S. Han, S. Hong, S. Hyun, T. J. Jeong, H.-C. Ji, I.-S. Joe, B. Kim, D. Kim, J. Kim, J.-K. Kim, K. Kim, S.-G. Kim, D. Kong, B. Kuh, H. Kwon, B. Lee, H. Lee, K. Lee, S. Lee, K. Na, J. Nam, A. Nejadmalayeri, Y. Park, S. Parmar, J. Pyo, D. Shin, J. Shin, Y.- Shin, S.-D. Suh, H. Yoon, Y. Park, J. Choi, K.-H. Ha, and G. Jeong, “Bulk-Si photonics technology for DRAM interface,” Photonics Research 2(3), A25–A33 (2014).
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J. Song, X. Luo, X. Tu, M. K. Park, J. S. Kee, H. Zhang, M. Yu, G. Q. Lo, and D. L. Kwong, “Electrical tracing-assisted dual-microring label‑free optical bio/chemical sensors,” Opt. Express 20(4), 4189–4197 (2012).
[Crossref] [PubMed]

Q. Fang, J. F. Song, T. Y. Liow, H. Cai, M. B. Yu, G. Q. Lo, and D. L. Kwong, “Ultralow power silicon photonics thermo-optic switch with suspended phase arms,” IEEE Photon. Technol. Lett. 23(8), 525–527 (2011).
[Crossref]

T. Y. Liow, K. W. Ang, Q. Fang, J. F. Song, Y. Z. Xiong, M. B. Yu, G. Q. Lo, and D. L. Kwong, “Silicon modulators and germanium photodetectors on SOI: Monolithic integration, compatibility, and performance optimization,” IEEE J. Sel. Top. Quantum Electron. 16(1), 307–315 (2010).
[Crossref]

J. Song, H. Zhao, Q. Fang, S. H. Tao, T. Y. Liow, M. B. Yu, G. Q. Lo, and D. L. Kwong, “Effective thermo-optical enhanced cross-ring resonator MZI interleavers on SOI,” Opt. Express 16(26), 21476–21482 (2008).
[Crossref] [PubMed]

J. F. Song, S. H. Tao, Q. Fang, T. Y. Liow, M. B. Yu, G. Q. Lo, and D. L. Kwong, “Thermo-optical enhanced silicon wire interleavers,” IEEE Photon. Technol. Lett. 20(24), 2165–2167 (2008).
[Crossref]

Kwong, D.-L.

Laval, S.

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H. Byun, J. Bok, K. Cho, K. Cho, H. Choi, J. Choi, S. Choi, S. Han, S. Hong, S. Hyun, T. J. Jeong, H.-C. Ji, I.-S. Joe, B. Kim, D. Kim, J. Kim, J.-K. Kim, K. Kim, S.-G. Kim, D. Kong, B. Kuh, H. Kwon, B. Lee, H. Lee, K. Lee, S. Lee, K. Na, J. Nam, A. Nejadmalayeri, Y. Park, S. Parmar, J. Pyo, D. Shin, J. Shin, Y.- Shin, S.-D. Suh, H. Yoon, Y. Park, J. Choi, K.-H. Ha, and G. Jeong, “Bulk-Si photonics technology for DRAM interface,” Photonics Research 2(3), A25–A33 (2014).
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H. Byun, J. Bok, K. Cho, K. Cho, H. Choi, J. Choi, S. Choi, S. Han, S. Hong, S. Hyun, T. J. Jeong, H.-C. Ji, I.-S. Joe, B. Kim, D. Kim, J. Kim, J.-K. Kim, K. Kim, S.-G. Kim, D. Kong, B. Kuh, H. Kwon, B. Lee, H. Lee, K. Lee, S. Lee, K. Na, J. Nam, A. Nejadmalayeri, Y. Park, S. Parmar, J. Pyo, D. Shin, J. Shin, Y.- Shin, S.-D. Suh, H. Yoon, Y. Park, J. Choi, K.-H. Ha, and G. Jeong, “Bulk-Si photonics technology for DRAM interface,” Photonics Research 2(3), A25–A33 (2014).
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H. Byun, J. Bok, K. Cho, K. Cho, H. Choi, J. Choi, S. Choi, S. Han, S. Hong, S. Hyun, T. J. Jeong, H.-C. Ji, I.-S. Joe, B. Kim, D. Kim, J. Kim, J.-K. Kim, K. Kim, S.-G. Kim, D. Kong, B. Kuh, H. Kwon, B. Lee, H. Lee, K. Lee, S. Lee, K. Na, J. Nam, A. Nejadmalayeri, Y. Park, S. Parmar, J. Pyo, D. Shin, J. Shin, Y.- Shin, S.-D. Suh, H. Yoon, Y. Park, J. Choi, K.-H. Ha, and G. Jeong, “Bulk-Si photonics technology for DRAM interface,” Photonics Research 2(3), A25–A33 (2014).
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H. Byun, J. Bok, K. Cho, K. Cho, H. Choi, J. Choi, S. Choi, S. Han, S. Hong, S. Hyun, T. J. Jeong, H.-C. Ji, I.-S. Joe, B. Kim, D. Kim, J. Kim, J.-K. Kim, K. Kim, S.-G. Kim, D. Kong, B. Kuh, H. Kwon, B. Lee, H. Lee, K. Lee, S. Lee, K. Na, J. Nam, A. Nejadmalayeri, Y. Park, S. Parmar, J. Pyo, D. Shin, J. Shin, Y.- Shin, S.-D. Suh, H. Yoon, Y. Park, J. Choi, K.-H. Ha, and G. Jeong, “Bulk-Si photonics technology for DRAM interface,” Photonics Research 2(3), A25–A33 (2014).
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[Crossref] [PubMed]

Q. Fang, J. F. Song, T. Y. Liow, H. Cai, M. B. Yu, G. Q. Lo, and D. L. Kwong, “Ultralow power silicon photonics thermo-optic switch with suspended phase arms,” IEEE Photon. Technol. Lett. 23(8), 525–527 (2011).
[Crossref]

T. Y. Liow, K. W. Ang, Q. Fang, J. F. Song, Y. Z. Xiong, M. B. Yu, G. Q. Lo, and D. L. Kwong, “Silicon modulators and germanium photodetectors on SOI: Monolithic integration, compatibility, and performance optimization,” IEEE J. Sel. Top. Quantum Electron. 16(1), 307–315 (2010).
[Crossref]

J. Song, H. Zhao, Q. Fang, S. H. Tao, T. Y. Liow, M. B. Yu, G. Q. Lo, and D. L. Kwong, “Effective thermo-optical enhanced cross-ring resonator MZI interleavers on SOI,” Opt. Express 16(26), 21476–21482 (2008).
[Crossref] [PubMed]

J. F. Song, S. H. Tao, Q. Fang, T. Y. Liow, M. B. Yu, G. Q. Lo, and D. L. Kwong, “Thermo-optical enhanced silicon wire interleavers,” IEEE Photon. Technol. Lett. 20(24), 2165–2167 (2008).
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J. Song, X. Luo, J. S. Kee, K. Han, C. Li, M. K. Park, X. Tu, H. Zhang, Q. Fang, L. Jia, Y. J. Yoon, T. Y. Liow, M. Yu, and G. Q. Lo, “Silicon-based optoelectronic integrated circuit for label-free bio/chemical sensor,” Opt. Express 21(15), 17931–17940 (2013).
[Crossref] [PubMed]

J. Song, X. Luo, X. Tu, M. K. Park, J. S. Kee, H. Zhang, M. Yu, G. Q. Lo, and D. L. Kwong, “Electrical tracing-assisted dual-microring label‑free optical bio/chemical sensors,” Opt. Express 20(4), 4189–4197 (2012).
[Crossref] [PubMed]

Q. Fang, J. F. Song, T. Y. Liow, H. Cai, M. B. Yu, G. Q. Lo, and D. L. Kwong, “Ultralow power silicon photonics thermo-optic switch with suspended phase arms,” IEEE Photon. Technol. Lett. 23(8), 525–527 (2011).
[Crossref]

T. Y. Liow, K. W. Ang, Q. Fang, J. F. Song, Y. Z. Xiong, M. B. Yu, G. Q. Lo, and D. L. Kwong, “Silicon modulators and germanium photodetectors on SOI: Monolithic integration, compatibility, and performance optimization,” IEEE J. Sel. Top. Quantum Electron. 16(1), 307–315 (2010).
[Crossref]

J. F. Song, S. H. Tao, Q. Fang, T. Y. Liow, M. B. Yu, G. Q. Lo, and D. L. Kwong, “Thermo-optical enhanced silicon wire interleavers,” IEEE Photon. Technol. Lett. 20(24), 2165–2167 (2008).
[Crossref]

J. Song, H. Zhao, Q. Fang, S. H. Tao, T. Y. Liow, M. B. Yu, G. Q. Lo, and D. L. Kwong, “Effective thermo-optical enhanced cross-ring resonator MZI interleavers on SOI,” Opt. Express 16(26), 21476–21482 (2008).
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Morse, M.

Myslivets, E.

D. J. Thomson, F. Y. Gardes, J.-M. Fedeli, S. Zlatanovic, Y. Hu, B. P. P. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett. 24(4), 234–236 (2012).
[Crossref]

Na, K.

H. Byun, J. Bok, K. Cho, K. Cho, H. Choi, J. Choi, S. Choi, S. Han, S. Hong, S. Hyun, T. J. Jeong, H.-C. Ji, I.-S. Joe, B. Kim, D. Kim, J. Kim, J.-K. Kim, K. Kim, S.-G. Kim, D. Kong, B. Kuh, H. Kwon, B. Lee, H. Lee, K. Lee, S. Lee, K. Na, J. Nam, A. Nejadmalayeri, Y. Park, S. Parmar, J. Pyo, D. Shin, J. Shin, Y.- Shin, S.-D. Suh, H. Yoon, Y. Park, J. Choi, K.-H. Ha, and G. Jeong, “Bulk-Si photonics technology for DRAM interface,” Photonics Research 2(3), A25–A33 (2014).
[Crossref]

Nam, J.

H. Byun, J. Bok, K. Cho, K. Cho, H. Choi, J. Choi, S. Choi, S. Han, S. Hong, S. Hyun, T. J. Jeong, H.-C. Ji, I.-S. Joe, B. Kim, D. Kim, J. Kim, J.-K. Kim, K. Kim, S.-G. Kim, D. Kong, B. Kuh, H. Kwon, B. Lee, H. Lee, K. Lee, S. Lee, K. Na, J. Nam, A. Nejadmalayeri, Y. Park, S. Parmar, J. Pyo, D. Shin, J. Shin, Y.- Shin, S.-D. Suh, H. Yoon, Y. Park, J. Choi, K.-H. Ha, and G. Jeong, “Bulk-Si photonics technology for DRAM interface,” Photonics Research 2(3), A25–A33 (2014).
[Crossref]

Nejadmalayeri, A.

H. Byun, J. Bok, K. Cho, K. Cho, H. Choi, J. Choi, S. Choi, S. Han, S. Hong, S. Hyun, T. J. Jeong, H.-C. Ji, I.-S. Joe, B. Kim, D. Kim, J. Kim, J.-K. Kim, K. Kim, S.-G. Kim, D. Kong, B. Kuh, H. Kwon, B. Lee, H. Lee, K. Lee, S. Lee, K. Na, J. Nam, A. Nejadmalayeri, Y. Park, S. Parmar, J. Pyo, D. Shin, J. Shin, Y.- Shin, S.-D. Suh, H. Yoon, Y. Park, J. Choi, K.-H. Ha, and G. Jeong, “Bulk-Si photonics technology for DRAM interface,” Photonics Research 2(3), A25–A33 (2014).
[Crossref]

Osmond, J.

Paniccia, M.

Park, M. K.

Park, Y.

H. Byun, J. Bok, K. Cho, K. Cho, H. Choi, J. Choi, S. Choi, S. Han, S. Hong, S. Hyun, T. J. Jeong, H.-C. Ji, I.-S. Joe, B. Kim, D. Kim, J. Kim, J.-K. Kim, K. Kim, S.-G. Kim, D. Kong, B. Kuh, H. Kwon, B. Lee, H. Lee, K. Lee, S. Lee, K. Na, J. Nam, A. Nejadmalayeri, Y. Park, S. Parmar, J. Pyo, D. Shin, J. Shin, Y.- Shin, S.-D. Suh, H. Yoon, Y. Park, J. Choi, K.-H. Ha, and G. Jeong, “Bulk-Si photonics technology for DRAM interface,” Photonics Research 2(3), A25–A33 (2014).
[Crossref]

H. Byun, J. Bok, K. Cho, K. Cho, H. Choi, J. Choi, S. Choi, S. Han, S. Hong, S. Hyun, T. J. Jeong, H.-C. Ji, I.-S. Joe, B. Kim, D. Kim, J. Kim, J.-K. Kim, K. Kim, S.-G. Kim, D. Kong, B. Kuh, H. Kwon, B. Lee, H. Lee, K. Lee, S. Lee, K. Na, J. Nam, A. Nejadmalayeri, Y. Park, S. Parmar, J. Pyo, D. Shin, J. Shin, Y.- Shin, S.-D. Suh, H. Yoon, Y. Park, J. Choi, K.-H. Ha, and G. Jeong, “Bulk-Si photonics technology for DRAM interface,” Photonics Research 2(3), A25–A33 (2014).
[Crossref]

Parmar, S.

H. Byun, J. Bok, K. Cho, K. Cho, H. Choi, J. Choi, S. Choi, S. Han, S. Hong, S. Hyun, T. J. Jeong, H.-C. Ji, I.-S. Joe, B. Kim, D. Kim, J. Kim, J.-K. Kim, K. Kim, S.-G. Kim, D. Kong, B. Kuh, H. Kwon, B. Lee, H. Lee, K. Lee, S. Lee, K. Na, J. Nam, A. Nejadmalayeri, Y. Park, S. Parmar, J. Pyo, D. Shin, J. Shin, Y.- Shin, S.-D. Suh, H. Yoon, Y. Park, J. Choi, K.-H. Ha, and G. Jeong, “Bulk-Si photonics technology for DRAM interface,” Photonics Research 2(3), A25–A33 (2014).
[Crossref]

Pyo, J.

H. Byun, J. Bok, K. Cho, K. Cho, H. Choi, J. Choi, S. Choi, S. Han, S. Hong, S. Hyun, T. J. Jeong, H.-C. Ji, I.-S. Joe, B. Kim, D. Kim, J. Kim, J.-K. Kim, K. Kim, S.-G. Kim, D. Kong, B. Kuh, H. Kwon, B. Lee, H. Lee, K. Lee, S. Lee, K. Na, J. Nam, A. Nejadmalayeri, Y. Park, S. Parmar, J. Pyo, D. Shin, J. Shin, Y.- Shin, S.-D. Suh, H. Yoon, Y. Park, J. Choi, K.-H. Ha, and G. Jeong, “Bulk-Si photonics technology for DRAM interface,” Photonics Research 2(3), A25–A33 (2014).
[Crossref]

Qian, W.

Qing, F.

Raday, O.

Radic, S.

D. J. Thomson, F. Y. Gardes, J.-M. Fedeli, S. Zlatanovic, Y. Hu, B. P. P. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett. 24(4), 234–236 (2012).
[Crossref]

Reed, G. T.

D. J. Thomson, F. Y. Gardes, J.-M. Fedeli, S. Zlatanovic, Y. Hu, B. P. P. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett. 24(4), 234–236 (2012).
[Crossref]

Rendina, I.

M. Casalino, L. Sirleto, L. Moretti, and I. Rendina, “A silicon compatible resonant cavity enhanced photodetector working at 1.55 µm,” Semicond. Sci. Technol. 23(7), 075001 (2008).
[Crossref]

Rong, H.

Rubin, D.

Sarid, G.

Shafiiha, R.

Shin, D.

H. Byun, J. Bok, K. Cho, K. Cho, H. Choi, J. Choi, S. Choi, S. Han, S. Hong, S. Hyun, T. J. Jeong, H.-C. Ji, I.-S. Joe, B. Kim, D. Kim, J. Kim, J.-K. Kim, K. Kim, S.-G. Kim, D. Kong, B. Kuh, H. Kwon, B. Lee, H. Lee, K. Lee, S. Lee, K. Na, J. Nam, A. Nejadmalayeri, Y. Park, S. Parmar, J. Pyo, D. Shin, J. Shin, Y.- Shin, S.-D. Suh, H. Yoon, Y. Park, J. Choi, K.-H. Ha, and G. Jeong, “Bulk-Si photonics technology for DRAM interface,” Photonics Research 2(3), A25–A33 (2014).
[Crossref]

Shin, J.

H. Byun, J. Bok, K. Cho, K. Cho, H. Choi, J. Choi, S. Choi, S. Han, S. Hong, S. Hyun, T. J. Jeong, H.-C. Ji, I.-S. Joe, B. Kim, D. Kim, J. Kim, J.-K. Kim, K. Kim, S.-G. Kim, D. Kong, B. Kuh, H. Kwon, B. Lee, H. Lee, K. Lee, S. Lee, K. Na, J. Nam, A. Nejadmalayeri, Y. Park, S. Parmar, J. Pyo, D. Shin, J. Shin, Y.- Shin, S.-D. Suh, H. Yoon, Y. Park, J. Choi, K.-H. Ha, and G. Jeong, “Bulk-Si photonics technology for DRAM interface,” Photonics Research 2(3), A25–A33 (2014).
[Crossref]

Shin, Y.-

H. Byun, J. Bok, K. Cho, K. Cho, H. Choi, J. Choi, S. Choi, S. Han, S. Hong, S. Hyun, T. J. Jeong, H.-C. Ji, I.-S. Joe, B. Kim, D. Kim, J. Kim, J.-K. Kim, K. Kim, S.-G. Kim, D. Kong, B. Kuh, H. Kwon, B. Lee, H. Lee, K. Lee, S. Lee, K. Na, J. Nam, A. Nejadmalayeri, Y. Park, S. Parmar, J. Pyo, D. Shin, J. Shin, Y.- Shin, S.-D. Suh, H. Yoon, Y. Park, J. Choi, K.-H. Ha, and G. Jeong, “Bulk-Si photonics technology for DRAM interface,” Photonics Research 2(3), A25–A33 (2014).
[Crossref]

Sirleto, L.

M. Casalino, L. Sirleto, L. Moretti, and I. Rendina, “A silicon compatible resonant cavity enhanced photodetector working at 1.55 µm,” Semicond. Sci. Technol. 23(7), 075001 (2008).
[Crossref]

Song, J.

J. Song, X. Luo, X. Tu, L. Jia, Q. Fang, T.-Y. Liow, M. Yu, and G.-Q. Lo, “Three-dimensional (3D) monolithically integrated photodetector and WDM receiver based on bulk silicon wafer,” Opt. Express 22(16), 19546–19554 (2014).
[Crossref]

A. E.-J. Lim, J. Song, Q. Fang, C. Li, X. Tu, N. Duan, K. K. Chen, R. P.-C. Tern, and T.-Y. Liow, “Review of Silicon Photonics Foundry Efforts,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8300112 (2014).
[Crossref]

T.-Y. Liow, J. Song, X. Tu, A.-J. Lim, Q. Fang, N. Duan, M. Yu, and G.-Q. Lo, “Silicon Optical Interconnect Device Technologies for 40 Gb/s and Beyond,” IEEE J. Sel. Top. Quantum Electron. 19(2), 8200312 (2013).
[Crossref]

X. Tu, T.-Y. Liow, J. Song, X. Luo, Q. Fang, M. Yu, and G.-Q. Lo, “50-Gb/s silicon optical modulator with traveling-wave electrodes,” Opt. Express 21(10), 12776–12782 (2013).
[Crossref] [PubMed]

Q. Fang, L. Jia, J. Song, A. E. Lim, X. Tu, X. Luo, M. Yu, and G. Lo, “Demonstration of a vertical pin Ge-on-Si photo-detector on a wet-etched Si recess,” Opt. Express 21(20), 23325–23330 (2013).
[Crossref] [PubMed]

J. Song, X. Luo, J. S. Kee, K. Han, C. Li, M. K. Park, X. Tu, H. Zhang, Q. Fang, L. Jia, Y. J. Yoon, T. Y. Liow, M. Yu, and G. Q. Lo, “Silicon-based optoelectronic integrated circuit for label-free bio/chemical sensor,” Opt. Express 21(15), 17931–17940 (2013).
[Crossref] [PubMed]

J. Song, X. Luo, X. Tu, M. K. Park, J. S. Kee, H. Zhang, M. Yu, G. Q. Lo, and D. L. Kwong, “Electrical tracing-assisted dual-microring label‑free optical bio/chemical sensors,” Opt. Express 20(4), 4189–4197 (2012).
[Crossref] [PubMed]

J. Song, H. Zhao, Q. Fang, S. H. Tao, T. Y. Liow, M. B. Yu, G. Q. Lo, and D. L. Kwong, “Effective thermo-optical enhanced cross-ring resonator MZI interleavers on SOI,” Opt. Express 16(26), 21476–21482 (2008).
[Crossref] [PubMed]

Song, J. F.

Q. Fang, J. F. Song, T. Y. Liow, H. Cai, M. B. Yu, G. Q. Lo, and D. L. Kwong, “Ultralow power silicon photonics thermo-optic switch with suspended phase arms,” IEEE Photon. Technol. Lett. 23(8), 525–527 (2011).
[Crossref]

T. Y. Liow, K. W. Ang, Q. Fang, J. F. Song, Y. Z. Xiong, M. B. Yu, G. Q. Lo, and D. L. Kwong, “Silicon modulators and germanium photodetectors on SOI: Monolithic integration, compatibility, and performance optimization,” IEEE J. Sel. Top. Quantum Electron. 16(1), 307–315 (2010).
[Crossref]

J. F. Song, S. H. Tao, Q. Fang, T. Y. Liow, M. B. Yu, G. Q. Lo, and D. L. Kwong, “Thermo-optical enhanced silicon wire interleavers,” IEEE Photon. Technol. Lett. 20(24), 2165–2167 (2008).
[Crossref]

Suh, S.-D.

H. Byun, J. Bok, K. Cho, K. Cho, H. Choi, J. Choi, S. Choi, S. Han, S. Hong, S. Hyun, T. J. Jeong, H.-C. Ji, I.-S. Joe, B. Kim, D. Kim, J. Kim, J.-K. Kim, K. Kim, S.-G. Kim, D. Kong, B. Kuh, H. Kwon, B. Lee, H. Lee, K. Lee, S. Lee, K. Na, J. Nam, A. Nejadmalayeri, Y. Park, S. Parmar, J. Pyo, D. Shin, J. Shin, Y.- Shin, S.-D. Suh, H. Yoon, Y. Park, J. Choi, K.-H. Ha, and G. Jeong, “Bulk-Si photonics technology for DRAM interface,” Photonics Research 2(3), A25–A33 (2014).
[Crossref]

Tao, S. H.

J. F. Song, S. H. Tao, Q. Fang, T. Y. Liow, M. B. Yu, G. Q. Lo, and D. L. Kwong, “Thermo-optical enhanced silicon wire interleavers,” IEEE Photon. Technol. Lett. 20(24), 2165–2167 (2008).
[Crossref]

J. Song, H. Zhao, Q. Fang, S. H. Tao, T. Y. Liow, M. B. Yu, G. Q. Lo, and D. L. Kwong, “Effective thermo-optical enhanced cross-ring resonator MZI interleavers on SOI,” Opt. Express 16(26), 21476–21482 (2008).
[Crossref] [PubMed]

Tern, R. P.-C.

A. E.-J. Lim, J. Song, Q. Fang, C. Li, X. Tu, N. Duan, K. K. Chen, R. P.-C. Tern, and T.-Y. Liow, “Review of Silicon Photonics Foundry Efforts,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8300112 (2014).
[Crossref]

Thomson, D. J.

D. J. Thomson, F. Y. Gardes, J.-M. Fedeli, S. Zlatanovic, Y. Hu, B. P. P. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett. 24(4), 234–236 (2012).
[Crossref]

Tseng, J.

Tu, X.

A. E.-J. Lim, J. Song, Q. Fang, C. Li, X. Tu, N. Duan, K. K. Chen, R. P.-C. Tern, and T.-Y. Liow, “Review of Silicon Photonics Foundry Efforts,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8300112 (2014).
[Crossref]

J. Song, X. Luo, X. Tu, L. Jia, Q. Fang, T.-Y. Liow, M. Yu, and G.-Q. Lo, “Three-dimensional (3D) monolithically integrated photodetector and WDM receiver based on bulk silicon wafer,” Opt. Express 22(16), 19546–19554 (2014).
[Crossref]

X. Tu, T.-Y. Liow, J. Song, X. Luo, Q. Fang, M. Yu, and G.-Q. Lo, “50-Gb/s silicon optical modulator with traveling-wave electrodes,” Opt. Express 21(10), 12776–12782 (2013).
[Crossref] [PubMed]

T.-Y. Liow, J. Song, X. Tu, A.-J. Lim, Q. Fang, N. Duan, M. Yu, and G.-Q. Lo, “Silicon Optical Interconnect Device Technologies for 40 Gb/s and Beyond,” IEEE J. Sel. Top. Quantum Electron. 19(2), 8200312 (2013).
[Crossref]

J. Song, X. Luo, J. S. Kee, K. Han, C. Li, M. K. Park, X. Tu, H. Zhang, Q. Fang, L. Jia, Y. J. Yoon, T. Y. Liow, M. Yu, and G. Q. Lo, “Silicon-based optoelectronic integrated circuit for label-free bio/chemical sensor,” Opt. Express 21(15), 17931–17940 (2013).
[Crossref] [PubMed]

Q. Fang, L. Jia, J. Song, A. E. Lim, X. Tu, X. Luo, M. Yu, and G. Lo, “Demonstration of a vertical pin Ge-on-Si photo-detector on a wet-etched Si recess,” Opt. Express 21(20), 23325–23330 (2013).
[Crossref] [PubMed]

J. Song, X. Luo, X. Tu, M. K. Park, J. S. Kee, H. Zhang, M. Yu, G. Q. Lo, and D. L. Kwong, “Electrical tracing-assisted dual-microring label‑free optical bio/chemical sensors,” Opt. Express 20(4), 4189–4197 (2012).
[Crossref] [PubMed]

Unlu, M.

O. I. Dosunmu, D. D. Cannon, M. K. Emsley, L. C. Kimerling, and M. Unlu, “High-speed resonant cavity enhanced Ge photodetectors on reflecting Si substrates for 1550-nm operation,” IEEE Photon. Technol. Lett. 17(1), 175–177 (2005).
[Crossref]

Vivien, L.

Vlasov, Y.

Y. Vlasov, “Silicon photonics for next generation computing systems,” in Proceedings of IEEE Conference on European Conference of Optical Communications (Brussels, Belgium, 2008).
[Crossref]

White, J. S.

Xiong, Y. Z.

T. Y. Liow, K. W. Ang, Q. Fang, J. F. Song, Y. Z. Xiong, M. B. Yu, G. Q. Lo, and D. L. Kwong, “Silicon modulators and germanium photodetectors on SOI: Monolithic integration, compatibility, and performance optimization,” IEEE J. Sel. Top. Quantum Electron. 16(1), 307–315 (2010).
[Crossref]

Xu, S.

Yoon, H.

H. Byun, J. Bok, K. Cho, K. Cho, H. Choi, J. Choi, S. Choi, S. Han, S. Hong, S. Hyun, T. J. Jeong, H.-C. Ji, I.-S. Joe, B. Kim, D. Kim, J. Kim, J.-K. Kim, K. Kim, S.-G. Kim, D. Kong, B. Kuh, H. Kwon, B. Lee, H. Lee, K. Lee, S. Lee, K. Na, J. Nam, A. Nejadmalayeri, Y. Park, S. Parmar, J. Pyo, D. Shin, J. Shin, Y.- Shin, S.-D. Suh, H. Yoon, Y. Park, J. Choi, K.-H. Ha, and G. Jeong, “Bulk-Si photonics technology for DRAM interface,” Photonics Research 2(3), A25–A33 (2014).
[Crossref]

Yoon, Y. J.

Yu, M.

J. Song, X. Luo, X. Tu, L. Jia, Q. Fang, T.-Y. Liow, M. Yu, and G.-Q. Lo, “Three-dimensional (3D) monolithically integrated photodetector and WDM receiver based on bulk silicon wafer,” Opt. Express 22(16), 19546–19554 (2014).
[Crossref]

T.-Y. Liow, J. Song, X. Tu, A.-J. Lim, Q. Fang, N. Duan, M. Yu, and G.-Q. Lo, “Silicon Optical Interconnect Device Technologies for 40 Gb/s and Beyond,” IEEE J. Sel. Top. Quantum Electron. 19(2), 8200312 (2013).
[Crossref]

X. Tu, T.-Y. Liow, J. Song, X. Luo, Q. Fang, M. Yu, and G.-Q. Lo, “50-Gb/s silicon optical modulator with traveling-wave electrodes,” Opt. Express 21(10), 12776–12782 (2013).
[Crossref] [PubMed]

J. Song, X. Luo, J. S. Kee, K. Han, C. Li, M. K. Park, X. Tu, H. Zhang, Q. Fang, L. Jia, Y. J. Yoon, T. Y. Liow, M. Yu, and G. Q. Lo, “Silicon-based optoelectronic integrated circuit for label-free bio/chemical sensor,” Opt. Express 21(15), 17931–17940 (2013).
[Crossref] [PubMed]

Q. Fang, L. Jia, J. Song, A. E. Lim, X. Tu, X. Luo, M. Yu, and G. Lo, “Demonstration of a vertical pin Ge-on-Si photo-detector on a wet-etched Si recess,” Opt. Express 21(20), 23325–23330 (2013).
[Crossref] [PubMed]

J. Song, X. Luo, X. Tu, M. K. Park, J. S. Kee, H. Zhang, M. Yu, G. Q. Lo, and D. L. Kwong, “Electrical tracing-assisted dual-microring label‑free optical bio/chemical sensors,” Opt. Express 20(4), 4189–4197 (2012).
[Crossref] [PubMed]

A. E.-J. Lim, T.-Y. Liow, F. Qing, N. Duan, L. Ding, M. Yu, G.-Q. Lo, and D.-L. Kwong, “Novel Evanescent-Coupled Germanium Electro-Absorption Modulator Featuring Monolithic Integration with Germanium p-i-n Photodetector,” Opt. Express 19(6), 5040–5046 (2011).
[Crossref] [PubMed]

Yu, M. B.

Q. Fang, J. F. Song, T. Y. Liow, H. Cai, M. B. Yu, G. Q. Lo, and D. L. Kwong, “Ultralow power silicon photonics thermo-optic switch with suspended phase arms,” IEEE Photon. Technol. Lett. 23(8), 525–527 (2011).
[Crossref]

T. Y. Liow, K. W. Ang, Q. Fang, J. F. Song, Y. Z. Xiong, M. B. Yu, G. Q. Lo, and D. L. Kwong, “Silicon modulators and germanium photodetectors on SOI: Monolithic integration, compatibility, and performance optimization,” IEEE J. Sel. Top. Quantum Electron. 16(1), 307–315 (2010).
[Crossref]

J. F. Song, S. H. Tao, Q. Fang, T. Y. Liow, M. B. Yu, G. Q. Lo, and D. L. Kwong, “Thermo-optical enhanced silicon wire interleavers,” IEEE Photon. Technol. Lett. 20(24), 2165–2167 (2008).
[Crossref]

J. Song, H. Zhao, Q. Fang, S. H. Tao, T. Y. Liow, M. B. Yu, G. Q. Lo, and D. L. Kwong, “Effective thermo-optical enhanced cross-ring resonator MZI interleavers on SOI,” Opt. Express 16(26), 21476–21482 (2008).
[Crossref] [PubMed]

Zhang, H.

Zhao, H.

Zheng, D.

Zheng, X.

Zlatanovic, S.

D. J. Thomson, F. Y. Gardes, J.-M. Fedeli, S. Zlatanovic, Y. Hu, B. P. P. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett. 24(4), 234–236 (2012).
[Crossref]

IEEE J. Sel. Top. Quantum Electron. (3)

A. E.-J. Lim, J. Song, Q. Fang, C. Li, X. Tu, N. Duan, K. K. Chen, R. P.-C. Tern, and T.-Y. Liow, “Review of Silicon Photonics Foundry Efforts,” IEEE J. Sel. Top. Quantum Electron. 20(4), 8300112 (2014).
[Crossref]

T.-Y. Liow, J. Song, X. Tu, A.-J. Lim, Q. Fang, N. Duan, M. Yu, and G.-Q. Lo, “Silicon Optical Interconnect Device Technologies for 40 Gb/s and Beyond,” IEEE J. Sel. Top. Quantum Electron. 19(2), 8200312 (2013).
[Crossref]

T. Y. Liow, K. W. Ang, Q. Fang, J. F. Song, Y. Z. Xiong, M. B. Yu, G. Q. Lo, and D. L. Kwong, “Silicon modulators and germanium photodetectors on SOI: Monolithic integration, compatibility, and performance optimization,” IEEE J. Sel. Top. Quantum Electron. 16(1), 307–315 (2010).
[Crossref]

IEEE Photon. Technol. Lett. (4)

O. I. Dosunmu, D. D. Cannon, M. K. Emsley, L. C. Kimerling, and M. Unlu, “High-speed resonant cavity enhanced Ge photodetectors on reflecting Si substrates for 1550-nm operation,” IEEE Photon. Technol. Lett. 17(1), 175–177 (2005).
[Crossref]

J. F. Song, S. H. Tao, Q. Fang, T. Y. Liow, M. B. Yu, G. Q. Lo, and D. L. Kwong, “Thermo-optical enhanced silicon wire interleavers,” IEEE Photon. Technol. Lett. 20(24), 2165–2167 (2008).
[Crossref]

D. J. Thomson, F. Y. Gardes, J.-M. Fedeli, S. Zlatanovic, Y. Hu, B. P. P. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett. 24(4), 234–236 (2012).
[Crossref]

Q. Fang, J. F. Song, T. Y. Liow, H. Cai, M. B. Yu, G. Q. Lo, and D. L. Kwong, “Ultralow power silicon photonics thermo-optic switch with suspended phase arms,” IEEE Photon. Technol. Lett. 23(8), 525–527 (2011).
[Crossref]

J. Opt. Netw. (1)

Opt. Express (10)

J. Song, H. Zhao, Q. Fang, S. H. Tao, T. Y. Liow, M. B. Yu, G. Q. Lo, and D. L. Kwong, “Effective thermo-optical enhanced cross-ring resonator MZI interleavers on SOI,” Opt. Express 16(26), 21476–21482 (2008).
[Crossref] [PubMed]

L. Vivien, J. Osmond, J. M. Fédéli, D. Marris-Morini, P. Crozat, J. F. Damlencourt, E. Cassan, Y. Lecunff, and S. Laval, “42 GHz p.i.n Germanium photodetector integrated in a silicon-on-insulator waveguide,” Opt. Express 17(8), 6252–6257 (2009).
[Crossref] [PubMed]

P. Dong, S. Liao, D. Feng, H. Liang, D. Zheng, R. Shafiiha, C. C. Kung, W. Qian, G. Li, X. Zheng, A. V. Krishnamoorthy, and M. Asghari, “Low Vpp, ultralow-energy, compact, high-speed silicon electro-optic modulator,” Opt. Express 17(25), 22484–22490 (2009).
[Crossref] [PubMed]

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J. Song, X. Luo, X. Tu, M. K. Park, J. S. Kee, H. Zhang, M. Yu, G. Q. Lo, and D. L. Kwong, “Electrical tracing-assisted dual-microring label‑free optical bio/chemical sensors,” Opt. Express 20(4), 4189–4197 (2012).
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Figures (8)

Fig. 1
Fig. 1 Schematic illustrations for (a) the waveguide coupled photodetector, and (b) the proposed microring resonator (MRR) enhanced photodetector. The coupling region of microring and waveguide are denoted by dished ellipse. The coupling coefficients are t and κ respectively. The heater tuning region is denoted by a green color.
Fig. 2
Fig. 2 Comparison of amplitude enhancement factor with or without loss. Red dished line demarks a lossless situation, while the blue solid line shows the lossy state. Green color filled region is enhancement factor larger than 1.
Fig. 3
Fig. 3 SEM images (a) & (b) are before and after TMAH etch, (c) after Ge epitaxial, and (d) after Ge etching. (e) & (f) are optical microscope images of fabricated devices. (g) TEM cross-section image of fabricated device.
Fig. 4
Fig. 4 (a) Propagation loss with different length PD. The reverse bias is −1 V, and laser wavelength is 1600 nm. (b) Photocurrent and dark current of a 4 μm PD.
Fig. 5
Fig. 5 (a) Photoresponse comparison between MRR enhanced PD (blue) and waveguide coupled PD (red). (b) Magnified image of a resonant peak. Center wavelength is 1611.1nm and bandwidth is 0.222 nm. Blue dots are measured data. Red line is Lorentz fitted results.
Fig. 6
Fig. 6 (a). 20 Gb/s eye-diagram at −1 V reverse bias. (b) 40 Gb/s eye-diagram at −2 V reverse bias.
Fig. 7
Fig. 7 (a) PD current vs. heater electrical power with different incident light wavelength. The wavelength is increasing from 1603.5 nm to 1605.5 nm by step of 0.5 nm. (b) The heater power curresponding to maximum photocurrent vs. incident wavelength.
Fig. 8
Fig. 8 (a) PD current vs. heater power for different temperature. (b) the peak heater power vs. temperature. The slope is ~3.2 mW/K.

Equations (10)

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M= κ 2 12tγcos( θ )+ t 2 γ 2
M os = 1+t 1t
M os = κ 2 ( 1tγ ) 2
E r = E 0 iκ 1tγexp( iθ )
E= E 0 sin( π υ f t )exp( 2πiυ t )= E 0 2i { exp[ 2πi( υ+ υ f 2 ) t ]exp[ 2πi( υ υ f 2 ) t ] }
| E r | 2 = | E r+ + E r | 2 = 1 2 E 0 2 κ 2 1+cos( 2π υ f t +ϑ ) ( 1tγ ) 2 +4tγ sin 2 ( π υ f τ 2 )
| ( υ f ) | 2 = | ( 0 ) | 2 1 1+ ( υ f υ 3dB,PD ) 2 1 1+ 4tγ ( 1tγ ) 2 sin 2 ( π υ f τ 2 )
1 υ 3dB 2 1 υ 3dB,PD 2 + 1 υ 3dB,MRR 2 = 1 υ 3dB,PD 2 + 1 ( υ/Q ) 2
Q= k 0 L n g 2 tγ 1tγ
1 υ 3dB,PD 2 1 υ 3dB,RC 2 + 1 υ 3dB,tr 2

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