Abstract

Integrated semiconductor lasers on silicon are one of the most crucial devices to enable low-cost silicon photonic integrated circuits for high-bandwidth optic communications and interconnects. While optical amplifiers and lasers are typically realized in III-V waveguide structures, it is beneficial to have an integration approach which allows flexible and efficient coupling of light between III-V gain media and silicon waveguides. In this paper, we propose and demonstrate a novel fabrication technique and associated transition structure to realize integrated lasers without the constraints of other critical processing parameters such as the starting silicon layer thicknesses. This technique employs epitaxial growth of silicon in a pre-defined trench with taper structures. We fabricate and demonstrate a long-cavity hybrid laser with a narrow linewidth of 130 kHz and an output power of 1.5 mW using the proposed technique.

© 2014 Optical Society of America

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References

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  1. P. Dong, Y.-K. Chen, G.-H. Duan, and D. T. Neilson, “Silicon photonic devices and integrated circuits,” J. Nanophoton., in press.
  2. P. Dong, X. Liu, S. Chandrasekhar, L. L. Buhl, R. Aroca, Y. Baeyens, and Y.-K. Chen, “Monolithic silicon photonic integrated circuits for compact 100+ Gb/s coherent optical receivers and transmitters,” IEEE J. Sel. Top. Quantum Electron. 20(4), 6100108 (2014).
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    [Crossref]
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    [Crossref]
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    [Crossref]
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2014 (1)

P. Dong, X. Liu, S. Chandrasekhar, L. L. Buhl, R. Aroca, Y. Baeyens, and Y.-K. Chen, “Monolithic silicon photonic integrated circuits for compact 100+ Gb/s coherent optical receivers and transmitters,” IEEE J. Sel. Top. Quantum Electron. 20(4), 6100108 (2014).

2013 (2)

S. Keyvaninia, G. Roelkens, D. Van Thourhout, C. Jany, M. Lamponi, A. Le Liepvre, F. Lelarge, D. Make, G.-H. Duan, D. Bordel, and J.-M. Fedeli, “Demonstration of a heterogeneously integrated III-V/SOI single wavelength tunable laser,” Opt. Express 21(3), 3784–3792 (2013).
[Crossref] [PubMed]

P. Dong, T.-C. Hu, L. Zhang, M. Dinu, R. Kopf, A. Tate, L. Buhl, D. T. Neilson, X. Luo, T.-Y. Liow, G.-Q. Lo, and Y.-K. Chen, “1.9 µm hybrid silicon/III-V semiconductor laser,” IEE Electron. Lett. 49(10), 664–666 (2013).
[Crossref]

2012 (2)

M. Lamponi, S. Keyvaninia, C. Jany, F. Poingt, F. Lelarge, G. de Valicourt, G. Roelkens, D. Van Thourhout, S. Messaoudene, J.-M. Fedeli, and G. H. Duan, “Low-threshold heterogeneously integrated InP/SOI lasers with a double adiabatic taper coupler,” IEEE Photon. Technol. Lett. 24(1), 76–78 (2012).
[Crossref]

Q. Wang, D. K. T. Ng, Y. Wang, Y. Wei, J. Pu, P. Rabiei, and S. T. Ho, “Heterogeneous Si/III-V integration and the optical vertical interconnect access,” Opt. Express 20(15), 16745–16756 (2012).
[Crossref]

2011 (4)

2008 (1)

2007 (1)

H. Park, A. W. Fang, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, “An electrically pumped AlGaInAs-silicon evanescent amplifier,” IEEE Photon. Technol. Lett. 19(4), 230–232 (2007).
[Crossref]

2006 (3)

Aalto, T.

T. Aalto, K. Solehmainen, M. Harjanne, M. Kapulainen, and P. Heimala, “Low-loss converters between optical silicon waveguides of different sizes and types,” IEEE Photon. Technol. Lett. 18(5), 709–711 (2006).
[Crossref]

Al Amin, A.

Arai, S.

Aroca, R.

P. Dong, X. Liu, S. Chandrasekhar, L. L. Buhl, R. Aroca, Y. Baeyens, and Y.-K. Chen, “Monolithic silicon photonic integrated circuits for compact 100+ Gb/s coherent optical receivers and transmitters,” IEEE J. Sel. Top. Quantum Electron. 20(4), 6100108 (2014).

Augendre, E.

Baeyens, Y.

P. Dong, X. Liu, S. Chandrasekhar, L. L. Buhl, R. Aroca, Y. Baeyens, and Y.-K. Chen, “Monolithic silicon photonic integrated circuits for compact 100+ Gb/s coherent optical receivers and transmitters,” IEEE J. Sel. Top. Quantum Electron. 20(4), 6100108 (2014).

Ben Bakir, B.

Bordel, D.

S. Keyvaninia, G. Roelkens, D. Van Thourhout, C. Jany, M. Lamponi, A. Le Liepvre, F. Lelarge, D. Make, G.-H. Duan, D. Bordel, and J.-M. Fedeli, “Demonstration of a heterogeneously integrated III-V/SOI single wavelength tunable laser,” Opt. Express 21(3), 3784–3792 (2013).
[Crossref] [PubMed]

B. Ben Bakir, A. Descos, N. Olivier, D. Bordel, P. Grosse, E. Augendre, L. Fulbert, and J. M. Fedeli, “Electrically driven hybrid Si/III-V Fabry-Pérot lasers based on adiabatic mode transformers,” Opt. Express 19(11), 10317–10325 (2011).
[Crossref] [PubMed]

G. H. Duan, C. Jany, A. Le Liepvre, J. G. Provost, D. Make, F. Lelarge, M. Lamponi, F. Poingt, J.-M. Fedeli, S. Messaoudene, D. Bordel, S. Brision, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D. J. Thomson, F. Y. Gardes, and G. T. Reed, “10 Gb/s integrated tunable hybrid III-V/si laser and silicon mach-zehnder modulator,” in Proceedings of European Conference and Exhibition on Optical Communication ECEOC (Amsterdam, 2012).
[Crossref]

Bowers, J. E.

H. Park, A. W. Fang, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, “An electrically pumped AlGaInAs-silicon evanescent amplifier,” IEEE Photon. Technol. Lett. 19(4), 230–232 (2007).
[Crossref]

A. W. Fang, H. Park, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, “Electrically pumped hybrid AlGaInAs-silicon evanescent laser,” Opt. Express 14(20), 9203–9210 (2006).
[Crossref] [PubMed]

Brision, S.

G. H. Duan, C. Jany, A. Le Liepvre, J. G. Provost, D. Make, F. Lelarge, M. Lamponi, F. Poingt, J.-M. Fedeli, S. Messaoudene, D. Bordel, S. Brision, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D. J. Thomson, F. Y. Gardes, and G. T. Reed, “10 Gb/s integrated tunable hybrid III-V/si laser and silicon mach-zehnder modulator,” in Proceedings of European Conference and Exhibition on Optical Communication ECEOC (Amsterdam, 2012).
[Crossref]

Buhl, L.

P. Dong, T.-C. Hu, L. Zhang, M. Dinu, R. Kopf, A. Tate, L. Buhl, D. T. Neilson, X. Luo, T.-Y. Liow, G.-Q. Lo, and Y.-K. Chen, “1.9 µm hybrid silicon/III-V semiconductor laser,” IEE Electron. Lett. 49(10), 664–666 (2013).
[Crossref]

Buhl, L. L.

P. Dong, X. Liu, S. Chandrasekhar, L. L. Buhl, R. Aroca, Y. Baeyens, and Y.-K. Chen, “Monolithic silicon photonic integrated circuits for compact 100+ Gb/s coherent optical receivers and transmitters,” IEEE J. Sel. Top. Quantum Electron. 20(4), 6100108 (2014).

Chandrasekhar, S.

P. Dong, X. Liu, S. Chandrasekhar, L. L. Buhl, R. Aroca, Y. Baeyens, and Y.-K. Chen, “Monolithic silicon photonic integrated circuits for compact 100+ Gb/s coherent optical receivers and transmitters,” IEEE J. Sel. Top. Quantum Electron. 20(4), 6100108 (2014).

Chen, X.

Chen, Y.-K.

P. Dong, X. Liu, S. Chandrasekhar, L. L. Buhl, R. Aroca, Y. Baeyens, and Y.-K. Chen, “Monolithic silicon photonic integrated circuits for compact 100+ Gb/s coherent optical receivers and transmitters,” IEEE J. Sel. Top. Quantum Electron. 20(4), 6100108 (2014).

P. Dong, T.-C. Hu, L. Zhang, M. Dinu, R. Kopf, A. Tate, L. Buhl, D. T. Neilson, X. Luo, T.-Y. Liow, G.-Q. Lo, and Y.-K. Chen, “1.9 µm hybrid silicon/III-V semiconductor laser,” IEE Electron. Lett. 49(10), 664–666 (2013).
[Crossref]

P. Dong, Y.-K. Chen, G.-H. Duan, and D. T. Neilson, “Silicon photonic devices and integrated circuits,” J. Nanophoton., in press.

Cohen, O.

H. Park, A. W. Fang, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, “An electrically pumped AlGaInAs-silicon evanescent amplifier,” IEEE Photon. Technol. Lett. 19(4), 230–232 (2007).
[Crossref]

A. W. Fang, H. Park, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, “Electrically pumped hybrid AlGaInAs-silicon evanescent laser,” Opt. Express 14(20), 9203–9210 (2006).
[Crossref] [PubMed]

de Valicourt, G.

M. Lamponi, S. Keyvaninia, C. Jany, F. Poingt, F. Lelarge, G. de Valicourt, G. Roelkens, D. Van Thourhout, S. Messaoudene, J.-M. Fedeli, and G. H. Duan, “Low-threshold heterogeneously integrated InP/SOI lasers with a double adiabatic taper coupler,” IEEE Photon. Technol. Lett. 24(1), 76–78 (2012).
[Crossref]

Descos, A.

Dinu, M.

P. Dong, T.-C. Hu, L. Zhang, M. Dinu, R. Kopf, A. Tate, L. Buhl, D. T. Neilson, X. Luo, T.-Y. Liow, G.-Q. Lo, and Y.-K. Chen, “1.9 µm hybrid silicon/III-V semiconductor laser,” IEE Electron. Lett. 49(10), 664–666 (2013).
[Crossref]

Dong, P.

P. Dong, X. Liu, S. Chandrasekhar, L. L. Buhl, R. Aroca, Y. Baeyens, and Y.-K. Chen, “Monolithic silicon photonic integrated circuits for compact 100+ Gb/s coherent optical receivers and transmitters,” IEEE J. Sel. Top. Quantum Electron. 20(4), 6100108 (2014).

P. Dong, T.-C. Hu, L. Zhang, M. Dinu, R. Kopf, A. Tate, L. Buhl, D. T. Neilson, X. Luo, T.-Y. Liow, G.-Q. Lo, and Y.-K. Chen, “1.9 µm hybrid silicon/III-V semiconductor laser,” IEE Electron. Lett. 49(10), 664–666 (2013).
[Crossref]

P. Dong, Y.-K. Chen, G.-H. Duan, and D. T. Neilson, “Silicon photonic devices and integrated circuits,” J. Nanophoton., in press.

Duan, G. H.

M. Lamponi, S. Keyvaninia, C. Jany, F. Poingt, F. Lelarge, G. de Valicourt, G. Roelkens, D. Van Thourhout, S. Messaoudene, J.-M. Fedeli, and G. H. Duan, “Low-threshold heterogeneously integrated InP/SOI lasers with a double adiabatic taper coupler,” IEEE Photon. Technol. Lett. 24(1), 76–78 (2012).
[Crossref]

G. H. Duan, C. Jany, A. Le Liepvre, J. G. Provost, D. Make, F. Lelarge, M. Lamponi, F. Poingt, J.-M. Fedeli, S. Messaoudene, D. Bordel, S. Brision, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D. J. Thomson, F. Y. Gardes, and G. T. Reed, “10 Gb/s integrated tunable hybrid III-V/si laser and silicon mach-zehnder modulator,” in Proceedings of European Conference and Exhibition on Optical Communication ECEOC (Amsterdam, 2012).
[Crossref]

Duan, G.-H.

Fang, A. W.

H. Park, A. W. Fang, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, “An electrically pumped AlGaInAs-silicon evanescent amplifier,” IEEE Photon. Technol. Lett. 19(4), 230–232 (2007).
[Crossref]

A. W. Fang, H. Park, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, “Electrically pumped hybrid AlGaInAs-silicon evanescent laser,” Opt. Express 14(20), 9203–9210 (2006).
[Crossref] [PubMed]

Fedeli, J. M.

Fedeli, J.-M.

S. Keyvaninia, G. Roelkens, D. Van Thourhout, C. Jany, M. Lamponi, A. Le Liepvre, F. Lelarge, D. Make, G.-H. Duan, D. Bordel, and J.-M. Fedeli, “Demonstration of a heterogeneously integrated III-V/SOI single wavelength tunable laser,” Opt. Express 21(3), 3784–3792 (2013).
[Crossref] [PubMed]

M. Lamponi, S. Keyvaninia, C. Jany, F. Poingt, F. Lelarge, G. de Valicourt, G. Roelkens, D. Van Thourhout, S. Messaoudene, J.-M. Fedeli, and G. H. Duan, “Low-threshold heterogeneously integrated InP/SOI lasers with a double adiabatic taper coupler,” IEEE Photon. Technol. Lett. 24(1), 76–78 (2012).
[Crossref]

G. H. Duan, C. Jany, A. Le Liepvre, J. G. Provost, D. Make, F. Lelarge, M. Lamponi, F. Poingt, J.-M. Fedeli, S. Messaoudene, D. Bordel, S. Brision, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D. J. Thomson, F. Y. Gardes, and G. T. Reed, “10 Gb/s integrated tunable hybrid III-V/si laser and silicon mach-zehnder modulator,” in Proceedings of European Conference and Exhibition on Optical Communication ECEOC (Amsterdam, 2012).
[Crossref]

Fulbert, L.

Gardes, F. Y.

G. H. Duan, C. Jany, A. Le Liepvre, J. G. Provost, D. Make, F. Lelarge, M. Lamponi, F. Poingt, J.-M. Fedeli, S. Messaoudene, D. Bordel, S. Brision, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D. J. Thomson, F. Y. Gardes, and G. T. Reed, “10 Gb/s integrated tunable hybrid III-V/si laser and silicon mach-zehnder modulator,” in Proceedings of European Conference and Exhibition on Optical Communication ECEOC (Amsterdam, 2012).
[Crossref]

Grosse, P.

Harjanne, M.

T. Aalto, K. Solehmainen, M. Harjanne, M. Kapulainen, and P. Heimala, “Low-loss converters between optical silicon waveguides of different sizes and types,” IEEE Photon. Technol. Lett. 18(5), 709–711 (2006).
[Crossref]

Heck, J.

S. Stanković, R. Jones, M. Sysak, J. Heck, G. Roelkens, and D. Van Thourhout, “1310 nm hybrid III-V/Si Fabry-Perot laser based on adhesive bonding,” IEEE Photon. Technol. Lett. 23(23), 1781–1783 (2011).
[Crossref]

Heimala, P.

T. Aalto, K. Solehmainen, M. Harjanne, M. Kapulainen, and P. Heimala, “Low-loss converters between optical silicon waveguides of different sizes and types,” IEEE Photon. Technol. Lett. 18(5), 709–711 (2006).
[Crossref]

Ho, S. T.

Hu, T.-C.

P. Dong, T.-C. Hu, L. Zhang, M. Dinu, R. Kopf, A. Tate, L. Buhl, D. T. Neilson, X. Luo, T.-Y. Liow, G.-Q. Lo, and Y.-K. Chen, “1.9 µm hybrid silicon/III-V semiconductor laser,” IEE Electron. Lett. 49(10), 664–666 (2013).
[Crossref]

Jany, C.

S. Keyvaninia, G. Roelkens, D. Van Thourhout, C. Jany, M. Lamponi, A. Le Liepvre, F. Lelarge, D. Make, G.-H. Duan, D. Bordel, and J.-M. Fedeli, “Demonstration of a heterogeneously integrated III-V/SOI single wavelength tunable laser,” Opt. Express 21(3), 3784–3792 (2013).
[Crossref] [PubMed]

M. Lamponi, S. Keyvaninia, C. Jany, F. Poingt, F. Lelarge, G. de Valicourt, G. Roelkens, D. Van Thourhout, S. Messaoudene, J.-M. Fedeli, and G. H. Duan, “Low-threshold heterogeneously integrated InP/SOI lasers with a double adiabatic taper coupler,” IEEE Photon. Technol. Lett. 24(1), 76–78 (2012).
[Crossref]

G. H. Duan, C. Jany, A. Le Liepvre, J. G. Provost, D. Make, F. Lelarge, M. Lamponi, F. Poingt, J.-M. Fedeli, S. Messaoudene, D. Bordel, S. Brision, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D. J. Thomson, F. Y. Gardes, and G. T. Reed, “10 Gb/s integrated tunable hybrid III-V/si laser and silicon mach-zehnder modulator,” in Proceedings of European Conference and Exhibition on Optical Communication ECEOC (Amsterdam, 2012).
[Crossref]

Jones, R.

S. Stanković, R. Jones, M. Sysak, J. Heck, G. Roelkens, and D. Van Thourhout, “1310 nm hybrid III-V/Si Fabry-Perot laser based on adhesive bonding,” IEEE Photon. Technol. Lett. 23(23), 1781–1783 (2011).
[Crossref]

H. Park, A. W. Fang, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, “An electrically pumped AlGaInAs-silicon evanescent amplifier,” IEEE Photon. Technol. Lett. 19(4), 230–232 (2007).
[Crossref]

A. W. Fang, H. Park, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, “Electrically pumped hybrid AlGaInAs-silicon evanescent laser,” Opt. Express 14(20), 9203–9210 (2006).
[Crossref] [PubMed]

Kapulainen, M.

T. Aalto, K. Solehmainen, M. Harjanne, M. Kapulainen, and P. Heimala, “Low-loss converters between optical silicon waveguides of different sizes and types,” IEEE Photon. Technol. Lett. 18(5), 709–711 (2006).
[Crossref]

Keyvaninia, S.

S. Keyvaninia, G. Roelkens, D. Van Thourhout, C. Jany, M. Lamponi, A. Le Liepvre, F. Lelarge, D. Make, G.-H. Duan, D. Bordel, and J.-M. Fedeli, “Demonstration of a heterogeneously integrated III-V/SOI single wavelength tunable laser,” Opt. Express 21(3), 3784–3792 (2013).
[Crossref] [PubMed]

M. Lamponi, S. Keyvaninia, C. Jany, F. Poingt, F. Lelarge, G. de Valicourt, G. Roelkens, D. Van Thourhout, S. Messaoudene, J.-M. Fedeli, and G. H. Duan, “Low-threshold heterogeneously integrated InP/SOI lasers with a double adiabatic taper coupler,” IEEE Photon. Technol. Lett. 24(1), 76–78 (2012).
[Crossref]

G. H. Duan, C. Jany, A. Le Liepvre, J. G. Provost, D. Make, F. Lelarge, M. Lamponi, F. Poingt, J.-M. Fedeli, S. Messaoudene, D. Bordel, S. Brision, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D. J. Thomson, F. Y. Gardes, and G. T. Reed, “10 Gb/s integrated tunable hybrid III-V/si laser and silicon mach-zehnder modulator,” in Proceedings of European Conference and Exhibition on Optical Communication ECEOC (Amsterdam, 2012).
[Crossref]

Kopf, R.

P. Dong, T.-C. Hu, L. Zhang, M. Dinu, R. Kopf, A. Tate, L. Buhl, D. T. Neilson, X. Luo, T.-Y. Liow, G.-Q. Lo, and Y.-K. Chen, “1.9 µm hybrid silicon/III-V semiconductor laser,” IEE Electron. Lett. 49(10), 664–666 (2013).
[Crossref]

Lamponi, M.

S. Keyvaninia, G. Roelkens, D. Van Thourhout, C. Jany, M. Lamponi, A. Le Liepvre, F. Lelarge, D. Make, G.-H. Duan, D. Bordel, and J.-M. Fedeli, “Demonstration of a heterogeneously integrated III-V/SOI single wavelength tunable laser,” Opt. Express 21(3), 3784–3792 (2013).
[Crossref] [PubMed]

M. Lamponi, S. Keyvaninia, C. Jany, F. Poingt, F. Lelarge, G. de Valicourt, G. Roelkens, D. Van Thourhout, S. Messaoudene, J.-M. Fedeli, and G. H. Duan, “Low-threshold heterogeneously integrated InP/SOI lasers with a double adiabatic taper coupler,” IEEE Photon. Technol. Lett. 24(1), 76–78 (2012).
[Crossref]

G. H. Duan, C. Jany, A. Le Liepvre, J. G. Provost, D. Make, F. Lelarge, M. Lamponi, F. Poingt, J.-M. Fedeli, S. Messaoudene, D. Bordel, S. Brision, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D. J. Thomson, F. Y. Gardes, and G. T. Reed, “10 Gb/s integrated tunable hybrid III-V/si laser and silicon mach-zehnder modulator,” in Proceedings of European Conference and Exhibition on Optical Communication ECEOC (Amsterdam, 2012).
[Crossref]

Le Liepvre, A.

S. Keyvaninia, G. Roelkens, D. Van Thourhout, C. Jany, M. Lamponi, A. Le Liepvre, F. Lelarge, D. Make, G.-H. Duan, D. Bordel, and J.-M. Fedeli, “Demonstration of a heterogeneously integrated III-V/SOI single wavelength tunable laser,” Opt. Express 21(3), 3784–3792 (2013).
[Crossref] [PubMed]

G. H. Duan, C. Jany, A. Le Liepvre, J. G. Provost, D. Make, F. Lelarge, M. Lamponi, F. Poingt, J.-M. Fedeli, S. Messaoudene, D. Bordel, S. Brision, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D. J. Thomson, F. Y. Gardes, and G. T. Reed, “10 Gb/s integrated tunable hybrid III-V/si laser and silicon mach-zehnder modulator,” in Proceedings of European Conference and Exhibition on Optical Communication ECEOC (Amsterdam, 2012).
[Crossref]

Lelarge, F.

S. Keyvaninia, G. Roelkens, D. Van Thourhout, C. Jany, M. Lamponi, A. Le Liepvre, F. Lelarge, D. Make, G.-H. Duan, D. Bordel, and J.-M. Fedeli, “Demonstration of a heterogeneously integrated III-V/SOI single wavelength tunable laser,” Opt. Express 21(3), 3784–3792 (2013).
[Crossref] [PubMed]

M. Lamponi, S. Keyvaninia, C. Jany, F. Poingt, F. Lelarge, G. de Valicourt, G. Roelkens, D. Van Thourhout, S. Messaoudene, J.-M. Fedeli, and G. H. Duan, “Low-threshold heterogeneously integrated InP/SOI lasers with a double adiabatic taper coupler,” IEEE Photon. Technol. Lett. 24(1), 76–78 (2012).
[Crossref]

G. H. Duan, C. Jany, A. Le Liepvre, J. G. Provost, D. Make, F. Lelarge, M. Lamponi, F. Poingt, J.-M. Fedeli, S. Messaoudene, D. Bordel, S. Brision, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D. J. Thomson, F. Y. Gardes, and G. T. Reed, “10 Gb/s integrated tunable hybrid III-V/si laser and silicon mach-zehnder modulator,” in Proceedings of European Conference and Exhibition on Optical Communication ECEOC (Amsterdam, 2012).
[Crossref]

Liow, T.-Y.

P. Dong, T.-C. Hu, L. Zhang, M. Dinu, R. Kopf, A. Tate, L. Buhl, D. T. Neilson, X. Luo, T.-Y. Liow, G.-Q. Lo, and Y.-K. Chen, “1.9 µm hybrid silicon/III-V semiconductor laser,” IEE Electron. Lett. 49(10), 664–666 (2013).
[Crossref]

Liu, X.

P. Dong, X. Liu, S. Chandrasekhar, L. L. Buhl, R. Aroca, Y. Baeyens, and Y.-K. Chen, “Monolithic silicon photonic integrated circuits for compact 100+ Gb/s coherent optical receivers and transmitters,” IEEE J. Sel. Top. Quantum Electron. 20(4), 6100108 (2014).

Lo, G.-Q.

P. Dong, T.-C. Hu, L. Zhang, M. Dinu, R. Kopf, A. Tate, L. Buhl, D. T. Neilson, X. Luo, T.-Y. Liow, G.-Q. Lo, and Y.-K. Chen, “1.9 µm hybrid silicon/III-V semiconductor laser,” IEE Electron. Lett. 49(10), 664–666 (2013).
[Crossref]

Luo, X.

P. Dong, T.-C. Hu, L. Zhang, M. Dinu, R. Kopf, A. Tate, L. Buhl, D. T. Neilson, X. Luo, T.-Y. Liow, G.-Q. Lo, and Y.-K. Chen, “1.9 µm hybrid silicon/III-V semiconductor laser,” IEE Electron. Lett. 49(10), 664–666 (2013).
[Crossref]

Maher, R.

Make, D.

S. Keyvaninia, G. Roelkens, D. Van Thourhout, C. Jany, M. Lamponi, A. Le Liepvre, F. Lelarge, D. Make, G.-H. Duan, D. Bordel, and J.-M. Fedeli, “Demonstration of a heterogeneously integrated III-V/SOI single wavelength tunable laser,” Opt. Express 21(3), 3784–3792 (2013).
[Crossref] [PubMed]

G. H. Duan, C. Jany, A. Le Liepvre, J. G. Provost, D. Make, F. Lelarge, M. Lamponi, F. Poingt, J.-M. Fedeli, S. Messaoudene, D. Bordel, S. Brision, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D. J. Thomson, F. Y. Gardes, and G. T. Reed, “10 Gb/s integrated tunable hybrid III-V/si laser and silicon mach-zehnder modulator,” in Proceedings of European Conference and Exhibition on Optical Communication ECEOC (Amsterdam, 2012).
[Crossref]

Maruyama, T.

Messaoudene, S.

M. Lamponi, S. Keyvaninia, C. Jany, F. Poingt, F. Lelarge, G. de Valicourt, G. Roelkens, D. Van Thourhout, S. Messaoudene, J.-M. Fedeli, and G. H. Duan, “Low-threshold heterogeneously integrated InP/SOI lasers with a double adiabatic taper coupler,” IEEE Photon. Technol. Lett. 24(1), 76–78 (2012).
[Crossref]

G. H. Duan, C. Jany, A. Le Liepvre, J. G. Provost, D. Make, F. Lelarge, M. Lamponi, F. Poingt, J.-M. Fedeli, S. Messaoudene, D. Bordel, S. Brision, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D. J. Thomson, F. Y. Gardes, and G. T. Reed, “10 Gb/s integrated tunable hybrid III-V/si laser and silicon mach-zehnder modulator,” in Proceedings of European Conference and Exhibition on Optical Communication ECEOC (Amsterdam, 2012).
[Crossref]

Miura, K.

Neilson, D. T.

P. Dong, T.-C. Hu, L. Zhang, M. Dinu, R. Kopf, A. Tate, L. Buhl, D. T. Neilson, X. Luo, T.-Y. Liow, G.-Q. Lo, and Y.-K. Chen, “1.9 µm hybrid silicon/III-V semiconductor laser,” IEE Electron. Lett. 49(10), 664–666 (2013).
[Crossref]

P. Dong, Y.-K. Chen, G.-H. Duan, and D. T. Neilson, “Silicon photonic devices and integrated circuits,” J. Nanophoton., in press.

Ng, D. K. T.

Nishimoto, Y.

Okumura, T.

Olivier, N.

Paniccia, M. J.

H. Park, A. W. Fang, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, “An electrically pumped AlGaInAs-silicon evanescent amplifier,” IEEE Photon. Technol. Lett. 19(4), 230–232 (2007).
[Crossref]

A. W. Fang, H. Park, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, “Electrically pumped hybrid AlGaInAs-silicon evanescent laser,” Opt. Express 14(20), 9203–9210 (2006).
[Crossref] [PubMed]

Park, H.

H. Park, A. W. Fang, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, “An electrically pumped AlGaInAs-silicon evanescent amplifier,” IEEE Photon. Technol. Lett. 19(4), 230–232 (2007).
[Crossref]

A. W. Fang, H. Park, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, “Electrically pumped hybrid AlGaInAs-silicon evanescent laser,” Opt. Express 14(20), 9203–9210 (2006).
[Crossref] [PubMed]

Poingt, F.

M. Lamponi, S. Keyvaninia, C. Jany, F. Poingt, F. Lelarge, G. de Valicourt, G. Roelkens, D. Van Thourhout, S. Messaoudene, J.-M. Fedeli, and G. H. Duan, “Low-threshold heterogeneously integrated InP/SOI lasers with a double adiabatic taper coupler,” IEEE Photon. Technol. Lett. 24(1), 76–78 (2012).
[Crossref]

G. H. Duan, C. Jany, A. Le Liepvre, J. G. Provost, D. Make, F. Lelarge, M. Lamponi, F. Poingt, J.-M. Fedeli, S. Messaoudene, D. Bordel, S. Brision, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D. J. Thomson, F. Y. Gardes, and G. T. Reed, “10 Gb/s integrated tunable hybrid III-V/si laser and silicon mach-zehnder modulator,” in Proceedings of European Conference and Exhibition on Optical Communication ECEOC (Amsterdam, 2012).
[Crossref]

Provost, J. G.

G. H. Duan, C. Jany, A. Le Liepvre, J. G. Provost, D. Make, F. Lelarge, M. Lamponi, F. Poingt, J.-M. Fedeli, S. Messaoudene, D. Bordel, S. Brision, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D. J. Thomson, F. Y. Gardes, and G. T. Reed, “10 Gb/s integrated tunable hybrid III-V/si laser and silicon mach-zehnder modulator,” in Proceedings of European Conference and Exhibition on Optical Communication ECEOC (Amsterdam, 2012).
[Crossref]

Pu, J.

Rabiei, P.

Reed, G. T.

G. H. Duan, C. Jany, A. Le Liepvre, J. G. Provost, D. Make, F. Lelarge, M. Lamponi, F. Poingt, J.-M. Fedeli, S. Messaoudene, D. Bordel, S. Brision, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D. J. Thomson, F. Y. Gardes, and G. T. Reed, “10 Gb/s integrated tunable hybrid III-V/si laser and silicon mach-zehnder modulator,” in Proceedings of European Conference and Exhibition on Optical Communication ECEOC (Amsterdam, 2012).
[Crossref]

Roelkens, G.

S. Keyvaninia, G. Roelkens, D. Van Thourhout, C. Jany, M. Lamponi, A. Le Liepvre, F. Lelarge, D. Make, G.-H. Duan, D. Bordel, and J.-M. Fedeli, “Demonstration of a heterogeneously integrated III-V/SOI single wavelength tunable laser,” Opt. Express 21(3), 3784–3792 (2013).
[Crossref] [PubMed]

M. Lamponi, S. Keyvaninia, C. Jany, F. Poingt, F. Lelarge, G. de Valicourt, G. Roelkens, D. Van Thourhout, S. Messaoudene, J.-M. Fedeli, and G. H. Duan, “Low-threshold heterogeneously integrated InP/SOI lasers with a double adiabatic taper coupler,” IEEE Photon. Technol. Lett. 24(1), 76–78 (2012).
[Crossref]

S. Stanković, R. Jones, M. Sysak, J. Heck, G. Roelkens, and D. Van Thourhout, “1310 nm hybrid III-V/Si Fabry-Perot laser based on adhesive bonding,” IEEE Photon. Technol. Lett. 23(23), 1781–1783 (2011).
[Crossref]

G. H. Duan, C. Jany, A. Le Liepvre, J. G. Provost, D. Make, F. Lelarge, M. Lamponi, F. Poingt, J.-M. Fedeli, S. Messaoudene, D. Bordel, S. Brision, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D. J. Thomson, F. Y. Gardes, and G. T. Reed, “10 Gb/s integrated tunable hybrid III-V/si laser and silicon mach-zehnder modulator,” in Proceedings of European Conference and Exhibition on Optical Communication ECEOC (Amsterdam, 2012).
[Crossref]

Sakamoto, S.

Shieh, W.

Solehmainen, K.

T. Aalto, K. Solehmainen, M. Harjanne, M. Kapulainen, and P. Heimala, “Low-loss converters between optical silicon waveguides of different sizes and types,” IEEE Photon. Technol. Lett. 18(5), 709–711 (2006).
[Crossref]

Stankovic, S.

S. Stanković, R. Jones, M. Sysak, J. Heck, G. Roelkens, and D. Van Thourhout, “1310 nm hybrid III-V/Si Fabry-Perot laser based on adhesive bonding,” IEEE Photon. Technol. Lett. 23(23), 1781–1783 (2011).
[Crossref]

Sun, X.

Sysak, M.

S. Stanković, R. Jones, M. Sysak, J. Heck, G. Roelkens, and D. Van Thourhout, “1310 nm hybrid III-V/Si Fabry-Perot laser based on adhesive bonding,” IEEE Photon. Technol. Lett. 23(23), 1781–1783 (2011).
[Crossref]

Tate, A.

P. Dong, T.-C. Hu, L. Zhang, M. Dinu, R. Kopf, A. Tate, L. Buhl, D. T. Neilson, X. Luo, T.-Y. Liow, G.-Q. Lo, and Y.-K. Chen, “1.9 µm hybrid silicon/III-V semiconductor laser,” IEE Electron. Lett. 49(10), 664–666 (2013).
[Crossref]

Thomsen, B.

Thomson, D. J.

G. H. Duan, C. Jany, A. Le Liepvre, J. G. Provost, D. Make, F. Lelarge, M. Lamponi, F. Poingt, J.-M. Fedeli, S. Messaoudene, D. Bordel, S. Brision, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D. J. Thomson, F. Y. Gardes, and G. T. Reed, “10 Gb/s integrated tunable hybrid III-V/si laser and silicon mach-zehnder modulator,” in Proceedings of European Conference and Exhibition on Optical Communication ECEOC (Amsterdam, 2012).
[Crossref]

Van Thourhout, D.

S. Keyvaninia, G. Roelkens, D. Van Thourhout, C. Jany, M. Lamponi, A. Le Liepvre, F. Lelarge, D. Make, G.-H. Duan, D. Bordel, and J.-M. Fedeli, “Demonstration of a heterogeneously integrated III-V/SOI single wavelength tunable laser,” Opt. Express 21(3), 3784–3792 (2013).
[Crossref] [PubMed]

M. Lamponi, S. Keyvaninia, C. Jany, F. Poingt, F. Lelarge, G. de Valicourt, G. Roelkens, D. Van Thourhout, S. Messaoudene, J.-M. Fedeli, and G. H. Duan, “Low-threshold heterogeneously integrated InP/SOI lasers with a double adiabatic taper coupler,” IEEE Photon. Technol. Lett. 24(1), 76–78 (2012).
[Crossref]

S. Stanković, R. Jones, M. Sysak, J. Heck, G. Roelkens, and D. Van Thourhout, “1310 nm hybrid III-V/Si Fabry-Perot laser based on adhesive bonding,” IEEE Photon. Technol. Lett. 23(23), 1781–1783 (2011).
[Crossref]

G. H. Duan, C. Jany, A. Le Liepvre, J. G. Provost, D. Make, F. Lelarge, M. Lamponi, F. Poingt, J.-M. Fedeli, S. Messaoudene, D. Bordel, S. Brision, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D. J. Thomson, F. Y. Gardes, and G. T. Reed, “10 Gb/s integrated tunable hybrid III-V/si laser and silicon mach-zehnder modulator,” in Proceedings of European Conference and Exhibition on Optical Communication ECEOC (Amsterdam, 2012).
[Crossref]

Wang, Q.

Wang, Y.

Wei, Y.

Yariv, A.

Zhang, L.

P. Dong, T.-C. Hu, L. Zhang, M. Dinu, R. Kopf, A. Tate, L. Buhl, D. T. Neilson, X. Luo, T.-Y. Liow, G.-Q. Lo, and Y.-K. Chen, “1.9 µm hybrid silicon/III-V semiconductor laser,” IEE Electron. Lett. 49(10), 664–666 (2013).
[Crossref]

IEE Electron. Lett. (1)

P. Dong, T.-C. Hu, L. Zhang, M. Dinu, R. Kopf, A. Tate, L. Buhl, D. T. Neilson, X. Luo, T.-Y. Liow, G.-Q. Lo, and Y.-K. Chen, “1.9 µm hybrid silicon/III-V semiconductor laser,” IEE Electron. Lett. 49(10), 664–666 (2013).
[Crossref]

IEEE J. Sel. Top. Quantum Electron. (1)

P. Dong, X. Liu, S. Chandrasekhar, L. L. Buhl, R. Aroca, Y. Baeyens, and Y.-K. Chen, “Monolithic silicon photonic integrated circuits for compact 100+ Gb/s coherent optical receivers and transmitters,” IEEE J. Sel. Top. Quantum Electron. 20(4), 6100108 (2014).

IEEE Photon. Technol. Lett. (4)

H. Park, A. W. Fang, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, “An electrically pumped AlGaInAs-silicon evanescent amplifier,” IEEE Photon. Technol. Lett. 19(4), 230–232 (2007).
[Crossref]

S. Stanković, R. Jones, M. Sysak, J. Heck, G. Roelkens, and D. Van Thourhout, “1310 nm hybrid III-V/Si Fabry-Perot laser based on adhesive bonding,” IEEE Photon. Technol. Lett. 23(23), 1781–1783 (2011).
[Crossref]

M. Lamponi, S. Keyvaninia, C. Jany, F. Poingt, F. Lelarge, G. de Valicourt, G. Roelkens, D. Van Thourhout, S. Messaoudene, J.-M. Fedeli, and G. H. Duan, “Low-threshold heterogeneously integrated InP/SOI lasers with a double adiabatic taper coupler,” IEEE Photon. Technol. Lett. 24(1), 76–78 (2012).
[Crossref]

T. Aalto, K. Solehmainen, M. Harjanne, M. Kapulainen, and P. Heimala, “Low-loss converters between optical silicon waveguides of different sizes and types,” IEEE Photon. Technol. Lett. 18(5), 709–711 (2006).
[Crossref]

J. Lightwave Technol. (1)

J. Opt. Soc. Am. B (1)

Opt. Express (6)

Other (3)

A. Le Liepvre, C. Jany, A. Accard, M. Lamponi, F. Poingt, D. Make, F. Lelarge, J.-M. Fedeli, S. Messaoudene, D. Bordel, and G.-H. Duan, “Widely wavelength tunable hybrid III–V/silicon laser with 45 nm tuning range fabricated using a wafer bonding technique,” in 2012 IEEE 9th International Conference on Group IV Photonics (GFP 2012) (2012), pp. 54–56.

G. H. Duan, C. Jany, A. Le Liepvre, J. G. Provost, D. Make, F. Lelarge, M. Lamponi, F. Poingt, J.-M. Fedeli, S. Messaoudene, D. Bordel, S. Brision, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D. J. Thomson, F. Y. Gardes, and G. T. Reed, “10 Gb/s integrated tunable hybrid III-V/si laser and silicon mach-zehnder modulator,” in Proceedings of European Conference and Exhibition on Optical Communication ECEOC (Amsterdam, 2012).
[Crossref]

P. Dong, Y.-K. Chen, G.-H. Duan, and D. T. Neilson, “Silicon photonic devices and integrated circuits,” J. Nanophoton., in press.

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Figures (8)

Fig. 1
Fig. 1 Effective refractive index of the fundamental mode of silicon slab waveguides versus silicon slab thicknesses. Both top and bottom claddings are oxide (n = 1.444) and silicon index is chosen as 3.48 for the wavelength of 1550 nm.
Fig. 2
Fig. 2 (a)-(c) Conventional etch-down process to achieve thin silicon to III-V waveguide coupling. (d)-(e) Proposed grow-up process.
Fig. 3
Fig. 3 (a)-(e) Fabrication sequence for proposed integration approach between III-V and silicon waveguides. (f) SEM pictures after trench formation; (g) SEM picture after epitaxial growth of silicon; (h) SEM picture after final CMP.
Fig. 4
Fig. 4 (a) Optical picture of the III-V wafer bonded on SOI processed wafer after InP substrate removal. (b) SEM picture of III-V waveguide after III-V dry etch. (c) SEM picture of the III-V gain section after full fabrication.
Fig. 5
Fig. 5 Long-cavity hybrid silicon/III-V laser cavity design. HR: High refection; SOA: semiconductor amplifier with schematic drawing shown in the bottom-left diagram. SEM picture shows the in-cavity ring filter with micro-heater.
Fig. 6
Fig. 6 Transition loss. (a) Transmission spectra for a reference waveguide (green) and a test device with 16 transition tapers. (b) Loss per transition as a function of wavelength.
Fig. 7
Fig. 7 Laser power and spectrum. (a) Output power versus injection current. (b) Laser spectra under different injection currents.
Fig. 8
Fig. 8 Laser linewidth measurement. (a) Measurement set-up using intra-dyne coherent detection. (b) Electrical field over a period of 100 μs. (c) Differential phase variation as a function of time interval. The slope is the lase linewidth which is 130 kHz for the fabricated hybrid laser.

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