Abstract

We demonstrated the InGaN/GaN-based light-emitting diodes (LEDs) with SiO2 nanoparticles embedded in nanopillar GaN template. With the SiO2 nanoparticles placed between the GaN nanopillars, subsequent overgrowth of GaN layer started only on the exposed tips of the nanopillars and rapidly switched to the lateral growth mode. This resulted in a high quality GaN layer “sitting” on the nanopillars and the layer of pores formed over the SiO2 nanoparticles. For multi-quantum-well LEDs grown on top of such template, ~3 fold increase in optical output was observed compared to reference samples. The effect is attributed mainly to the improved light extraction efficiency due to additional scattering in the nanopillars-SiO2-pores portion of the structure, also to the increased internal quantum efficiency caused by a decreased dislocation density and relaxed strain due to the GaN nanopillars.

© 2014 Optical Society of America

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References

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  1. E. F. Schubert and J. K. Kim, “Solid-state light sources getting smart,” Science 308(5726), 1274–1278 (2005).
    [Crossref] [PubMed]
  2. J. Piprek and S. Nakamura, “Physics of high-power InGaN/GaN lasers” IEEE Proc. Optoelectron, 149, 145–151 (2002).
    [Crossref]
  3. J. Robertson, “Diamond-like amorphous carbon,” Mater. Sci. Eng. Rep. 37(4-6), 129–281 (2002).
    [Crossref]
  4. W. K. Fong, K. K. Leung, and C. Surya, “Characterization of GaN/InGaN multiple quantum wells grown on sapphire substrates by nano-scale epitaxial lateral overgrowth technique,” J. Cryst. Growth 318(1), 488–491 (2011).
    [Crossref]
  5. J. H. Son, J. U. Kim, Y. H. Song, B. J. Kim, C. J. Ryu, and J. L. Lee, “Design rule of nanostructures in light-emitting diodes for complete elimination of total internal reflection,” Adv. Mater. 24(17), 2259–2262 (2012).
    [Crossref] [PubMed]
  6. H. G. Kim, H. K. Kim, H. Y. Kim, J. H. Ryu, J. H. Kang, N. Han, P. Uthirakumar, and C. H. Hong, “Impact of two-floor air prism arrays as an embedded reflector for enhancing the output power of InGaN/GaN light emitting diodes,” Appl. Phys. Lett. 95(22), 221110 (2009).
    [Crossref]
  7. C. Y. Cho, M. K. Kwon, I. K. Park, S. H. Hong, J. J. Kim, S. E. Park, S. T. Kim, and S. J. Park, “High-efficiency light-emitting diode with air voids embedded in lateral epitaxially overgrown GaN using a metal mask,” Opt. Express 19(S4Suppl 4), A943–A948 (2011).
    [Crossref] [PubMed]
  8. Y. J. Park, J. H. Kang, H. Y. Kim, V. V. Lysak, S. Chandramohan, J. H. Ryu, H. K. Kim, N. Han, H. Jeong, M. S. Jeong, and C. H. Hong, “Enhanced light emission in blue light-emitting diodes by multiple Mie scattering from embedded silica nanosphere stacking layers,” Opt. Express 19(23), 23429–23435 (2011).
    [Crossref] [PubMed]
  9. J. M. Park, J. K. Oh, K. W. Kwon, Y. H. Kim, S. S. Jo, J. K. Lee, and S. W. Ryu, “Improved light output of photonic crystal light-emitting diode fabricated by anodized aluminum oxide nano-patterns,” IEEE Photon. Technol. Lett. 20(4), 321–323 (2008).
    [Crossref]
  10. C. H. Kuo, L. C. Chang, and H. M. Chou, “Current spreading improvement in GaN-based light-emitting diode grown on nano-rod GaN template,” IEEE Photon. Technol. Lett. 24(7), 608–610 (2012).
    [Crossref]
  11. C. H. Chiu, H. H. Yen, C. L. Chao, Z. Y. Li, P. Yu, H. C. Kuo, T. C. Lu, S. C. Wang, K. M. Lau, and S. J. Cheng, “Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template,” Appl. Phys. Lett. 93(8), 081108 (2008).
    [Crossref]
  12. D. S. Wuu, W. K. Wang, K. S. Wen, S. C. Huang, S. H. Lin, S. Y. Huang, C. F. Lin, and R. H. Horng, “Defect reduction and efficiency improvement of near-ultraviolet emitters via laterally overgrown GaN on a GaN/patterned sapphire template,” Appl. Phys. Lett. 89(16), 161105 (2006).
    [Crossref]
  13. D. W. Jeon, W. M. Choi, H. J. Shin, S. M. Yoon, J. Y. Choi, L. W. Jang, and I. H. Lee, “Nanopillar InGaN/GaN light emitting diodes integrated with homogeneous multilayer graphene electrodes,” J. Mater. Chem. 21(44), 17688–17692 (2011).
    [Crossref]
  14. R. D. Dupuis, J. Park, P. A. Grudowski, C. J. Eiting, and Z. L. Weber, “Selective-area and lateral epitaxial overgrowth of III-N materials by metalorganic chemical vapor deposition,” J. Cryst. Growth 195(1-4), 340–345 (1998).
    [Crossref]
  15. D. G. Zhao, D. S. Jiang, H. Yang, J. J. Zhu, Z. S. Liu, S. M. Zhang, J. W. Liang, X. Li, X. Y. Li, and H. M. Gong, “Role of edge dislocations in enhancing the yellow luminescence of n-type GaN,” Appl. Phys. Lett. 88(24), 241917 (2006).
    [Crossref]
  16. A. Y. Polyakov, A. V. Govorkov, N. B. Smirnov, A. V. Markov, I. H. Lee, J. W. Ju, and S. J. Pearton, “Anisotropy of In incorporation in GaN/InGaN multiquantum wells prepared by epitaxial lateral overgrowth,” Appl. Phys. Lett. 94(14), 142103 (2009).
    [Crossref]
  17. A. Y. Polyakov, A. V. Govorkov, N. B. Smirnov, A. V. Markov, I. H. Lee, J. W. Ju, S. Y. Karpov, N. M. Shmidt, and S. J. Pearton, “Properties of undoped GaN/InGaN multi-quantum-wells and GaN/InGaN p-n junctions prepared by epitaxial lateral overgrowth,” J. Appl. Phys. 105(12), 123708 (2009).
    [Crossref]
  18. T. Takeuchi, H. Amano, and I. Akasaki, “Theoretical study of orientation dependence of piezoelectric effects in wurtzite strained GaInN/GaN heterostructures and quantum wells,” Jpn. J. Appl. Phys. 39(Part 1, No. 2A), 413–416 (2000).
    [Crossref]
  19. Y. D. Wang, S. J. Chua, M. S. Sander, P. Chen, S. Tripathy, and C. G. Fonstad, “Fabrication and properties of nanoporous GaN films,” Appl. Phys. Lett. 85(5), 816 (2004).
    [Crossref]

2012 (2)

C. H. Kuo, L. C. Chang, and H. M. Chou, “Current spreading improvement in GaN-based light-emitting diode grown on nano-rod GaN template,” IEEE Photon. Technol. Lett. 24(7), 608–610 (2012).
[Crossref]

J. H. Son, J. U. Kim, Y. H. Song, B. J. Kim, C. J. Ryu, and J. L. Lee, “Design rule of nanostructures in light-emitting diodes for complete elimination of total internal reflection,” Adv. Mater. 24(17), 2259–2262 (2012).
[Crossref] [PubMed]

2011 (4)

C. Y. Cho, M. K. Kwon, I. K. Park, S. H. Hong, J. J. Kim, S. E. Park, S. T. Kim, and S. J. Park, “High-efficiency light-emitting diode with air voids embedded in lateral epitaxially overgrown GaN using a metal mask,” Opt. Express 19(S4Suppl 4), A943–A948 (2011).
[Crossref] [PubMed]

Y. J. Park, J. H. Kang, H. Y. Kim, V. V. Lysak, S. Chandramohan, J. H. Ryu, H. K. Kim, N. Han, H. Jeong, M. S. Jeong, and C. H. Hong, “Enhanced light emission in blue light-emitting diodes by multiple Mie scattering from embedded silica nanosphere stacking layers,” Opt. Express 19(23), 23429–23435 (2011).
[Crossref] [PubMed]

W. K. Fong, K. K. Leung, and C. Surya, “Characterization of GaN/InGaN multiple quantum wells grown on sapphire substrates by nano-scale epitaxial lateral overgrowth technique,” J. Cryst. Growth 318(1), 488–491 (2011).
[Crossref]

D. W. Jeon, W. M. Choi, H. J. Shin, S. M. Yoon, J. Y. Choi, L. W. Jang, and I. H. Lee, “Nanopillar InGaN/GaN light emitting diodes integrated with homogeneous multilayer graphene electrodes,” J. Mater. Chem. 21(44), 17688–17692 (2011).
[Crossref]

2009 (3)

A. Y. Polyakov, A. V. Govorkov, N. B. Smirnov, A. V. Markov, I. H. Lee, J. W. Ju, and S. J. Pearton, “Anisotropy of In incorporation in GaN/InGaN multiquantum wells prepared by epitaxial lateral overgrowth,” Appl. Phys. Lett. 94(14), 142103 (2009).
[Crossref]

A. Y. Polyakov, A. V. Govorkov, N. B. Smirnov, A. V. Markov, I. H. Lee, J. W. Ju, S. Y. Karpov, N. M. Shmidt, and S. J. Pearton, “Properties of undoped GaN/InGaN multi-quantum-wells and GaN/InGaN p-n junctions prepared by epitaxial lateral overgrowth,” J. Appl. Phys. 105(12), 123708 (2009).
[Crossref]

H. G. Kim, H. K. Kim, H. Y. Kim, J. H. Ryu, J. H. Kang, N. Han, P. Uthirakumar, and C. H. Hong, “Impact of two-floor air prism arrays as an embedded reflector for enhancing the output power of InGaN/GaN light emitting diodes,” Appl. Phys. Lett. 95(22), 221110 (2009).
[Crossref]

2008 (2)

J. M. Park, J. K. Oh, K. W. Kwon, Y. H. Kim, S. S. Jo, J. K. Lee, and S. W. Ryu, “Improved light output of photonic crystal light-emitting diode fabricated by anodized aluminum oxide nano-patterns,” IEEE Photon. Technol. Lett. 20(4), 321–323 (2008).
[Crossref]

C. H. Chiu, H. H. Yen, C. L. Chao, Z. Y. Li, P. Yu, H. C. Kuo, T. C. Lu, S. C. Wang, K. M. Lau, and S. J. Cheng, “Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template,” Appl. Phys. Lett. 93(8), 081108 (2008).
[Crossref]

2006 (2)

D. S. Wuu, W. K. Wang, K. S. Wen, S. C. Huang, S. H. Lin, S. Y. Huang, C. F. Lin, and R. H. Horng, “Defect reduction and efficiency improvement of near-ultraviolet emitters via laterally overgrown GaN on a GaN/patterned sapphire template,” Appl. Phys. Lett. 89(16), 161105 (2006).
[Crossref]

D. G. Zhao, D. S. Jiang, H. Yang, J. J. Zhu, Z. S. Liu, S. M. Zhang, J. W. Liang, X. Li, X. Y. Li, and H. M. Gong, “Role of edge dislocations in enhancing the yellow luminescence of n-type GaN,” Appl. Phys. Lett. 88(24), 241917 (2006).
[Crossref]

2005 (1)

E. F. Schubert and J. K. Kim, “Solid-state light sources getting smart,” Science 308(5726), 1274–1278 (2005).
[Crossref] [PubMed]

2004 (1)

Y. D. Wang, S. J. Chua, M. S. Sander, P. Chen, S. Tripathy, and C. G. Fonstad, “Fabrication and properties of nanoporous GaN films,” Appl. Phys. Lett. 85(5), 816 (2004).
[Crossref]

2002 (1)

J. Robertson, “Diamond-like amorphous carbon,” Mater. Sci. Eng. Rep. 37(4-6), 129–281 (2002).
[Crossref]

2000 (1)

T. Takeuchi, H. Amano, and I. Akasaki, “Theoretical study of orientation dependence of piezoelectric effects in wurtzite strained GaInN/GaN heterostructures and quantum wells,” Jpn. J. Appl. Phys. 39(Part 1, No. 2A), 413–416 (2000).
[Crossref]

1998 (1)

R. D. Dupuis, J. Park, P. A. Grudowski, C. J. Eiting, and Z. L. Weber, “Selective-area and lateral epitaxial overgrowth of III-N materials by metalorganic chemical vapor deposition,” J. Cryst. Growth 195(1-4), 340–345 (1998).
[Crossref]

Akasaki, I.

T. Takeuchi, H. Amano, and I. Akasaki, “Theoretical study of orientation dependence of piezoelectric effects in wurtzite strained GaInN/GaN heterostructures and quantum wells,” Jpn. J. Appl. Phys. 39(Part 1, No. 2A), 413–416 (2000).
[Crossref]

Amano, H.

T. Takeuchi, H. Amano, and I. Akasaki, “Theoretical study of orientation dependence of piezoelectric effects in wurtzite strained GaInN/GaN heterostructures and quantum wells,” Jpn. J. Appl. Phys. 39(Part 1, No. 2A), 413–416 (2000).
[Crossref]

Chandramohan, S.

Chang, L. C.

C. H. Kuo, L. C. Chang, and H. M. Chou, “Current spreading improvement in GaN-based light-emitting diode grown on nano-rod GaN template,” IEEE Photon. Technol. Lett. 24(7), 608–610 (2012).
[Crossref]

Chao, C. L.

C. H. Chiu, H. H. Yen, C. L. Chao, Z. Y. Li, P. Yu, H. C. Kuo, T. C. Lu, S. C. Wang, K. M. Lau, and S. J. Cheng, “Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template,” Appl. Phys. Lett. 93(8), 081108 (2008).
[Crossref]

Chen, P.

Y. D. Wang, S. J. Chua, M. S. Sander, P. Chen, S. Tripathy, and C. G. Fonstad, “Fabrication and properties of nanoporous GaN films,” Appl. Phys. Lett. 85(5), 816 (2004).
[Crossref]

Cheng, S. J.

C. H. Chiu, H. H. Yen, C. L. Chao, Z. Y. Li, P. Yu, H. C. Kuo, T. C. Lu, S. C. Wang, K. M. Lau, and S. J. Cheng, “Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template,” Appl. Phys. Lett. 93(8), 081108 (2008).
[Crossref]

Chiu, C. H.

C. H. Chiu, H. H. Yen, C. L. Chao, Z. Y. Li, P. Yu, H. C. Kuo, T. C. Lu, S. C. Wang, K. M. Lau, and S. J. Cheng, “Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template,” Appl. Phys. Lett. 93(8), 081108 (2008).
[Crossref]

Cho, C. Y.

Choi, J. Y.

D. W. Jeon, W. M. Choi, H. J. Shin, S. M. Yoon, J. Y. Choi, L. W. Jang, and I. H. Lee, “Nanopillar InGaN/GaN light emitting diodes integrated with homogeneous multilayer graphene electrodes,” J. Mater. Chem. 21(44), 17688–17692 (2011).
[Crossref]

Choi, W. M.

D. W. Jeon, W. M. Choi, H. J. Shin, S. M. Yoon, J. Y. Choi, L. W. Jang, and I. H. Lee, “Nanopillar InGaN/GaN light emitting diodes integrated with homogeneous multilayer graphene electrodes,” J. Mater. Chem. 21(44), 17688–17692 (2011).
[Crossref]

Chou, H. M.

C. H. Kuo, L. C. Chang, and H. M. Chou, “Current spreading improvement in GaN-based light-emitting diode grown on nano-rod GaN template,” IEEE Photon. Technol. Lett. 24(7), 608–610 (2012).
[Crossref]

Chua, S. J.

Y. D. Wang, S. J. Chua, M. S. Sander, P. Chen, S. Tripathy, and C. G. Fonstad, “Fabrication and properties of nanoporous GaN films,” Appl. Phys. Lett. 85(5), 816 (2004).
[Crossref]

Dupuis, R. D.

R. D. Dupuis, J. Park, P. A. Grudowski, C. J. Eiting, and Z. L. Weber, “Selective-area and lateral epitaxial overgrowth of III-N materials by metalorganic chemical vapor deposition,” J. Cryst. Growth 195(1-4), 340–345 (1998).
[Crossref]

Eiting, C. J.

R. D. Dupuis, J. Park, P. A. Grudowski, C. J. Eiting, and Z. L. Weber, “Selective-area and lateral epitaxial overgrowth of III-N materials by metalorganic chemical vapor deposition,” J. Cryst. Growth 195(1-4), 340–345 (1998).
[Crossref]

Fong, W. K.

W. K. Fong, K. K. Leung, and C. Surya, “Characterization of GaN/InGaN multiple quantum wells grown on sapphire substrates by nano-scale epitaxial lateral overgrowth technique,” J. Cryst. Growth 318(1), 488–491 (2011).
[Crossref]

Fonstad, C. G.

Y. D. Wang, S. J. Chua, M. S. Sander, P. Chen, S. Tripathy, and C. G. Fonstad, “Fabrication and properties of nanoporous GaN films,” Appl. Phys. Lett. 85(5), 816 (2004).
[Crossref]

Gong, H. M.

D. G. Zhao, D. S. Jiang, H. Yang, J. J. Zhu, Z. S. Liu, S. M. Zhang, J. W. Liang, X. Li, X. Y. Li, and H. M. Gong, “Role of edge dislocations in enhancing the yellow luminescence of n-type GaN,” Appl. Phys. Lett. 88(24), 241917 (2006).
[Crossref]

Govorkov, A. V.

A. Y. Polyakov, A. V. Govorkov, N. B. Smirnov, A. V. Markov, I. H. Lee, J. W. Ju, and S. J. Pearton, “Anisotropy of In incorporation in GaN/InGaN multiquantum wells prepared by epitaxial lateral overgrowth,” Appl. Phys. Lett. 94(14), 142103 (2009).
[Crossref]

A. Y. Polyakov, A. V. Govorkov, N. B. Smirnov, A. V. Markov, I. H. Lee, J. W. Ju, S. Y. Karpov, N. M. Shmidt, and S. J. Pearton, “Properties of undoped GaN/InGaN multi-quantum-wells and GaN/InGaN p-n junctions prepared by epitaxial lateral overgrowth,” J. Appl. Phys. 105(12), 123708 (2009).
[Crossref]

Grudowski, P. A.

R. D. Dupuis, J. Park, P. A. Grudowski, C. J. Eiting, and Z. L. Weber, “Selective-area and lateral epitaxial overgrowth of III-N materials by metalorganic chemical vapor deposition,” J. Cryst. Growth 195(1-4), 340–345 (1998).
[Crossref]

Han, N.

Y. J. Park, J. H. Kang, H. Y. Kim, V. V. Lysak, S. Chandramohan, J. H. Ryu, H. K. Kim, N. Han, H. Jeong, M. S. Jeong, and C. H. Hong, “Enhanced light emission in blue light-emitting diodes by multiple Mie scattering from embedded silica nanosphere stacking layers,” Opt. Express 19(23), 23429–23435 (2011).
[Crossref] [PubMed]

H. G. Kim, H. K. Kim, H. Y. Kim, J. H. Ryu, J. H. Kang, N. Han, P. Uthirakumar, and C. H. Hong, “Impact of two-floor air prism arrays as an embedded reflector for enhancing the output power of InGaN/GaN light emitting diodes,” Appl. Phys. Lett. 95(22), 221110 (2009).
[Crossref]

Hong, C. H.

Y. J. Park, J. H. Kang, H. Y. Kim, V. V. Lysak, S. Chandramohan, J. H. Ryu, H. K. Kim, N. Han, H. Jeong, M. S. Jeong, and C. H. Hong, “Enhanced light emission in blue light-emitting diodes by multiple Mie scattering from embedded silica nanosphere stacking layers,” Opt. Express 19(23), 23429–23435 (2011).
[Crossref] [PubMed]

H. G. Kim, H. K. Kim, H. Y. Kim, J. H. Ryu, J. H. Kang, N. Han, P. Uthirakumar, and C. H. Hong, “Impact of two-floor air prism arrays as an embedded reflector for enhancing the output power of InGaN/GaN light emitting diodes,” Appl. Phys. Lett. 95(22), 221110 (2009).
[Crossref]

Hong, S. H.

Horng, R. H.

D. S. Wuu, W. K. Wang, K. S. Wen, S. C. Huang, S. H. Lin, S. Y. Huang, C. F. Lin, and R. H. Horng, “Defect reduction and efficiency improvement of near-ultraviolet emitters via laterally overgrown GaN on a GaN/patterned sapphire template,” Appl. Phys. Lett. 89(16), 161105 (2006).
[Crossref]

Huang, S. C.

D. S. Wuu, W. K. Wang, K. S. Wen, S. C. Huang, S. H. Lin, S. Y. Huang, C. F. Lin, and R. H. Horng, “Defect reduction and efficiency improvement of near-ultraviolet emitters via laterally overgrown GaN on a GaN/patterned sapphire template,” Appl. Phys. Lett. 89(16), 161105 (2006).
[Crossref]

Huang, S. Y.

D. S. Wuu, W. K. Wang, K. S. Wen, S. C. Huang, S. H. Lin, S. Y. Huang, C. F. Lin, and R. H. Horng, “Defect reduction and efficiency improvement of near-ultraviolet emitters via laterally overgrown GaN on a GaN/patterned sapphire template,” Appl. Phys. Lett. 89(16), 161105 (2006).
[Crossref]

Jang, L. W.

D. W. Jeon, W. M. Choi, H. J. Shin, S. M. Yoon, J. Y. Choi, L. W. Jang, and I. H. Lee, “Nanopillar InGaN/GaN light emitting diodes integrated with homogeneous multilayer graphene electrodes,” J. Mater. Chem. 21(44), 17688–17692 (2011).
[Crossref]

Jeon, D. W.

D. W. Jeon, W. M. Choi, H. J. Shin, S. M. Yoon, J. Y. Choi, L. W. Jang, and I. H. Lee, “Nanopillar InGaN/GaN light emitting diodes integrated with homogeneous multilayer graphene electrodes,” J. Mater. Chem. 21(44), 17688–17692 (2011).
[Crossref]

Jeong, H.

Jeong, M. S.

Jiang, D. S.

D. G. Zhao, D. S. Jiang, H. Yang, J. J. Zhu, Z. S. Liu, S. M. Zhang, J. W. Liang, X. Li, X. Y. Li, and H. M. Gong, “Role of edge dislocations in enhancing the yellow luminescence of n-type GaN,” Appl. Phys. Lett. 88(24), 241917 (2006).
[Crossref]

Jo, S. S.

J. M. Park, J. K. Oh, K. W. Kwon, Y. H. Kim, S. S. Jo, J. K. Lee, and S. W. Ryu, “Improved light output of photonic crystal light-emitting diode fabricated by anodized aluminum oxide nano-patterns,” IEEE Photon. Technol. Lett. 20(4), 321–323 (2008).
[Crossref]

Ju, J. W.

A. Y. Polyakov, A. V. Govorkov, N. B. Smirnov, A. V. Markov, I. H. Lee, J. W. Ju, and S. J. Pearton, “Anisotropy of In incorporation in GaN/InGaN multiquantum wells prepared by epitaxial lateral overgrowth,” Appl. Phys. Lett. 94(14), 142103 (2009).
[Crossref]

A. Y. Polyakov, A. V. Govorkov, N. B. Smirnov, A. V. Markov, I. H. Lee, J. W. Ju, S. Y. Karpov, N. M. Shmidt, and S. J. Pearton, “Properties of undoped GaN/InGaN multi-quantum-wells and GaN/InGaN p-n junctions prepared by epitaxial lateral overgrowth,” J. Appl. Phys. 105(12), 123708 (2009).
[Crossref]

Kang, J. H.

Y. J. Park, J. H. Kang, H. Y. Kim, V. V. Lysak, S. Chandramohan, J. H. Ryu, H. K. Kim, N. Han, H. Jeong, M. S. Jeong, and C. H. Hong, “Enhanced light emission in blue light-emitting diodes by multiple Mie scattering from embedded silica nanosphere stacking layers,” Opt. Express 19(23), 23429–23435 (2011).
[Crossref] [PubMed]

H. G. Kim, H. K. Kim, H. Y. Kim, J. H. Ryu, J. H. Kang, N. Han, P. Uthirakumar, and C. H. Hong, “Impact of two-floor air prism arrays as an embedded reflector for enhancing the output power of InGaN/GaN light emitting diodes,” Appl. Phys. Lett. 95(22), 221110 (2009).
[Crossref]

Karpov, S. Y.

A. Y. Polyakov, A. V. Govorkov, N. B. Smirnov, A. V. Markov, I. H. Lee, J. W. Ju, S. Y. Karpov, N. M. Shmidt, and S. J. Pearton, “Properties of undoped GaN/InGaN multi-quantum-wells and GaN/InGaN p-n junctions prepared by epitaxial lateral overgrowth,” J. Appl. Phys. 105(12), 123708 (2009).
[Crossref]

Kim, B. J.

J. H. Son, J. U. Kim, Y. H. Song, B. J. Kim, C. J. Ryu, and J. L. Lee, “Design rule of nanostructures in light-emitting diodes for complete elimination of total internal reflection,” Adv. Mater. 24(17), 2259–2262 (2012).
[Crossref] [PubMed]

Kim, H. G.

H. G. Kim, H. K. Kim, H. Y. Kim, J. H. Ryu, J. H. Kang, N. Han, P. Uthirakumar, and C. H. Hong, “Impact of two-floor air prism arrays as an embedded reflector for enhancing the output power of InGaN/GaN light emitting diodes,” Appl. Phys. Lett. 95(22), 221110 (2009).
[Crossref]

Kim, H. K.

Y. J. Park, J. H. Kang, H. Y. Kim, V. V. Lysak, S. Chandramohan, J. H. Ryu, H. K. Kim, N. Han, H. Jeong, M. S. Jeong, and C. H. Hong, “Enhanced light emission in blue light-emitting diodes by multiple Mie scattering from embedded silica nanosphere stacking layers,” Opt. Express 19(23), 23429–23435 (2011).
[Crossref] [PubMed]

H. G. Kim, H. K. Kim, H. Y. Kim, J. H. Ryu, J. H. Kang, N. Han, P. Uthirakumar, and C. H. Hong, “Impact of two-floor air prism arrays as an embedded reflector for enhancing the output power of InGaN/GaN light emitting diodes,” Appl. Phys. Lett. 95(22), 221110 (2009).
[Crossref]

Kim, H. Y.

Y. J. Park, J. H. Kang, H. Y. Kim, V. V. Lysak, S. Chandramohan, J. H. Ryu, H. K. Kim, N. Han, H. Jeong, M. S. Jeong, and C. H. Hong, “Enhanced light emission in blue light-emitting diodes by multiple Mie scattering from embedded silica nanosphere stacking layers,” Opt. Express 19(23), 23429–23435 (2011).
[Crossref] [PubMed]

H. G. Kim, H. K. Kim, H. Y. Kim, J. H. Ryu, J. H. Kang, N. Han, P. Uthirakumar, and C. H. Hong, “Impact of two-floor air prism arrays as an embedded reflector for enhancing the output power of InGaN/GaN light emitting diodes,” Appl. Phys. Lett. 95(22), 221110 (2009).
[Crossref]

Kim, J. J.

Kim, J. K.

E. F. Schubert and J. K. Kim, “Solid-state light sources getting smart,” Science 308(5726), 1274–1278 (2005).
[Crossref] [PubMed]

Kim, J. U.

J. H. Son, J. U. Kim, Y. H. Song, B. J. Kim, C. J. Ryu, and J. L. Lee, “Design rule of nanostructures in light-emitting diodes for complete elimination of total internal reflection,” Adv. Mater. 24(17), 2259–2262 (2012).
[Crossref] [PubMed]

Kim, S. T.

Kim, Y. H.

J. M. Park, J. K. Oh, K. W. Kwon, Y. H. Kim, S. S. Jo, J. K. Lee, and S. W. Ryu, “Improved light output of photonic crystal light-emitting diode fabricated by anodized aluminum oxide nano-patterns,” IEEE Photon. Technol. Lett. 20(4), 321–323 (2008).
[Crossref]

Kuo, C. H.

C. H. Kuo, L. C. Chang, and H. M. Chou, “Current spreading improvement in GaN-based light-emitting diode grown on nano-rod GaN template,” IEEE Photon. Technol. Lett. 24(7), 608–610 (2012).
[Crossref]

Kuo, H. C.

C. H. Chiu, H. H. Yen, C. L. Chao, Z. Y. Li, P. Yu, H. C. Kuo, T. C. Lu, S. C. Wang, K. M. Lau, and S. J. Cheng, “Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template,” Appl. Phys. Lett. 93(8), 081108 (2008).
[Crossref]

Kwon, K. W.

J. M. Park, J. K. Oh, K. W. Kwon, Y. H. Kim, S. S. Jo, J. K. Lee, and S. W. Ryu, “Improved light output of photonic crystal light-emitting diode fabricated by anodized aluminum oxide nano-patterns,” IEEE Photon. Technol. Lett. 20(4), 321–323 (2008).
[Crossref]

Kwon, M. K.

Lau, K. M.

C. H. Chiu, H. H. Yen, C. L. Chao, Z. Y. Li, P. Yu, H. C. Kuo, T. C. Lu, S. C. Wang, K. M. Lau, and S. J. Cheng, “Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template,” Appl. Phys. Lett. 93(8), 081108 (2008).
[Crossref]

Lee, I. H.

D. W. Jeon, W. M. Choi, H. J. Shin, S. M. Yoon, J. Y. Choi, L. W. Jang, and I. H. Lee, “Nanopillar InGaN/GaN light emitting diodes integrated with homogeneous multilayer graphene electrodes,” J. Mater. Chem. 21(44), 17688–17692 (2011).
[Crossref]

A. Y. Polyakov, A. V. Govorkov, N. B. Smirnov, A. V. Markov, I. H. Lee, J. W. Ju, S. Y. Karpov, N. M. Shmidt, and S. J. Pearton, “Properties of undoped GaN/InGaN multi-quantum-wells and GaN/InGaN p-n junctions prepared by epitaxial lateral overgrowth,” J. Appl. Phys. 105(12), 123708 (2009).
[Crossref]

A. Y. Polyakov, A. V. Govorkov, N. B. Smirnov, A. V. Markov, I. H. Lee, J. W. Ju, and S. J. Pearton, “Anisotropy of In incorporation in GaN/InGaN multiquantum wells prepared by epitaxial lateral overgrowth,” Appl. Phys. Lett. 94(14), 142103 (2009).
[Crossref]

Lee, J. K.

J. M. Park, J. K. Oh, K. W. Kwon, Y. H. Kim, S. S. Jo, J. K. Lee, and S. W. Ryu, “Improved light output of photonic crystal light-emitting diode fabricated by anodized aluminum oxide nano-patterns,” IEEE Photon. Technol. Lett. 20(4), 321–323 (2008).
[Crossref]

Lee, J. L.

J. H. Son, J. U. Kim, Y. H. Song, B. J. Kim, C. J. Ryu, and J. L. Lee, “Design rule of nanostructures in light-emitting diodes for complete elimination of total internal reflection,” Adv. Mater. 24(17), 2259–2262 (2012).
[Crossref] [PubMed]

Leung, K. K.

W. K. Fong, K. K. Leung, and C. Surya, “Characterization of GaN/InGaN multiple quantum wells grown on sapphire substrates by nano-scale epitaxial lateral overgrowth technique,” J. Cryst. Growth 318(1), 488–491 (2011).
[Crossref]

Li, X.

D. G. Zhao, D. S. Jiang, H. Yang, J. J. Zhu, Z. S. Liu, S. M. Zhang, J. W. Liang, X. Li, X. Y. Li, and H. M. Gong, “Role of edge dislocations in enhancing the yellow luminescence of n-type GaN,” Appl. Phys. Lett. 88(24), 241917 (2006).
[Crossref]

Li, X. Y.

D. G. Zhao, D. S. Jiang, H. Yang, J. J. Zhu, Z. S. Liu, S. M. Zhang, J. W. Liang, X. Li, X. Y. Li, and H. M. Gong, “Role of edge dislocations in enhancing the yellow luminescence of n-type GaN,” Appl. Phys. Lett. 88(24), 241917 (2006).
[Crossref]

Li, Z. Y.

C. H. Chiu, H. H. Yen, C. L. Chao, Z. Y. Li, P. Yu, H. C. Kuo, T. C. Lu, S. C. Wang, K. M. Lau, and S. J. Cheng, “Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template,” Appl. Phys. Lett. 93(8), 081108 (2008).
[Crossref]

Liang, J. W.

D. G. Zhao, D. S. Jiang, H. Yang, J. J. Zhu, Z. S. Liu, S. M. Zhang, J. W. Liang, X. Li, X. Y. Li, and H. M. Gong, “Role of edge dislocations in enhancing the yellow luminescence of n-type GaN,” Appl. Phys. Lett. 88(24), 241917 (2006).
[Crossref]

Lin, C. F.

D. S. Wuu, W. K. Wang, K. S. Wen, S. C. Huang, S. H. Lin, S. Y. Huang, C. F. Lin, and R. H. Horng, “Defect reduction and efficiency improvement of near-ultraviolet emitters via laterally overgrown GaN on a GaN/patterned sapphire template,” Appl. Phys. Lett. 89(16), 161105 (2006).
[Crossref]

Lin, S. H.

D. S. Wuu, W. K. Wang, K. S. Wen, S. C. Huang, S. H. Lin, S. Y. Huang, C. F. Lin, and R. H. Horng, “Defect reduction and efficiency improvement of near-ultraviolet emitters via laterally overgrown GaN on a GaN/patterned sapphire template,” Appl. Phys. Lett. 89(16), 161105 (2006).
[Crossref]

Liu, Z. S.

D. G. Zhao, D. S. Jiang, H. Yang, J. J. Zhu, Z. S. Liu, S. M. Zhang, J. W. Liang, X. Li, X. Y. Li, and H. M. Gong, “Role of edge dislocations in enhancing the yellow luminescence of n-type GaN,” Appl. Phys. Lett. 88(24), 241917 (2006).
[Crossref]

Lu, T. C.

C. H. Chiu, H. H. Yen, C. L. Chao, Z. Y. Li, P. Yu, H. C. Kuo, T. C. Lu, S. C. Wang, K. M. Lau, and S. J. Cheng, “Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template,” Appl. Phys. Lett. 93(8), 081108 (2008).
[Crossref]

Lysak, V. V.

Markov, A. V.

A. Y. Polyakov, A. V. Govorkov, N. B. Smirnov, A. V. Markov, I. H. Lee, J. W. Ju, and S. J. Pearton, “Anisotropy of In incorporation in GaN/InGaN multiquantum wells prepared by epitaxial lateral overgrowth,” Appl. Phys. Lett. 94(14), 142103 (2009).
[Crossref]

A. Y. Polyakov, A. V. Govorkov, N. B. Smirnov, A. V. Markov, I. H. Lee, J. W. Ju, S. Y. Karpov, N. M. Shmidt, and S. J. Pearton, “Properties of undoped GaN/InGaN multi-quantum-wells and GaN/InGaN p-n junctions prepared by epitaxial lateral overgrowth,” J. Appl. Phys. 105(12), 123708 (2009).
[Crossref]

Oh, J. K.

J. M. Park, J. K. Oh, K. W. Kwon, Y. H. Kim, S. S. Jo, J. K. Lee, and S. W. Ryu, “Improved light output of photonic crystal light-emitting diode fabricated by anodized aluminum oxide nano-patterns,” IEEE Photon. Technol. Lett. 20(4), 321–323 (2008).
[Crossref]

Park, I. K.

Park, J.

R. D. Dupuis, J. Park, P. A. Grudowski, C. J. Eiting, and Z. L. Weber, “Selective-area and lateral epitaxial overgrowth of III-N materials by metalorganic chemical vapor deposition,” J. Cryst. Growth 195(1-4), 340–345 (1998).
[Crossref]

Park, J. M.

J. M. Park, J. K. Oh, K. W. Kwon, Y. H. Kim, S. S. Jo, J. K. Lee, and S. W. Ryu, “Improved light output of photonic crystal light-emitting diode fabricated by anodized aluminum oxide nano-patterns,” IEEE Photon. Technol. Lett. 20(4), 321–323 (2008).
[Crossref]

Park, S. E.

Park, S. J.

Park, Y. J.

Pearton, S. J.

A. Y. Polyakov, A. V. Govorkov, N. B. Smirnov, A. V. Markov, I. H. Lee, J. W. Ju, and S. J. Pearton, “Anisotropy of In incorporation in GaN/InGaN multiquantum wells prepared by epitaxial lateral overgrowth,” Appl. Phys. Lett. 94(14), 142103 (2009).
[Crossref]

A. Y. Polyakov, A. V. Govorkov, N. B. Smirnov, A. V. Markov, I. H. Lee, J. W. Ju, S. Y. Karpov, N. M. Shmidt, and S. J. Pearton, “Properties of undoped GaN/InGaN multi-quantum-wells and GaN/InGaN p-n junctions prepared by epitaxial lateral overgrowth,” J. Appl. Phys. 105(12), 123708 (2009).
[Crossref]

Polyakov, A. Y.

A. Y. Polyakov, A. V. Govorkov, N. B. Smirnov, A. V. Markov, I. H. Lee, J. W. Ju, S. Y. Karpov, N. M. Shmidt, and S. J. Pearton, “Properties of undoped GaN/InGaN multi-quantum-wells and GaN/InGaN p-n junctions prepared by epitaxial lateral overgrowth,” J. Appl. Phys. 105(12), 123708 (2009).
[Crossref]

A. Y. Polyakov, A. V. Govorkov, N. B. Smirnov, A. V. Markov, I. H. Lee, J. W. Ju, and S. J. Pearton, “Anisotropy of In incorporation in GaN/InGaN multiquantum wells prepared by epitaxial lateral overgrowth,” Appl. Phys. Lett. 94(14), 142103 (2009).
[Crossref]

Robertson, J.

J. Robertson, “Diamond-like amorphous carbon,” Mater. Sci. Eng. Rep. 37(4-6), 129–281 (2002).
[Crossref]

Ryu, C. J.

J. H. Son, J. U. Kim, Y. H. Song, B. J. Kim, C. J. Ryu, and J. L. Lee, “Design rule of nanostructures in light-emitting diodes for complete elimination of total internal reflection,” Adv. Mater. 24(17), 2259–2262 (2012).
[Crossref] [PubMed]

Ryu, J. H.

Y. J. Park, J. H. Kang, H. Y. Kim, V. V. Lysak, S. Chandramohan, J. H. Ryu, H. K. Kim, N. Han, H. Jeong, M. S. Jeong, and C. H. Hong, “Enhanced light emission in blue light-emitting diodes by multiple Mie scattering from embedded silica nanosphere stacking layers,” Opt. Express 19(23), 23429–23435 (2011).
[Crossref] [PubMed]

H. G. Kim, H. K. Kim, H. Y. Kim, J. H. Ryu, J. H. Kang, N. Han, P. Uthirakumar, and C. H. Hong, “Impact of two-floor air prism arrays as an embedded reflector for enhancing the output power of InGaN/GaN light emitting diodes,” Appl. Phys. Lett. 95(22), 221110 (2009).
[Crossref]

Ryu, S. W.

J. M. Park, J. K. Oh, K. W. Kwon, Y. H. Kim, S. S. Jo, J. K. Lee, and S. W. Ryu, “Improved light output of photonic crystal light-emitting diode fabricated by anodized aluminum oxide nano-patterns,” IEEE Photon. Technol. Lett. 20(4), 321–323 (2008).
[Crossref]

Sander, M. S.

Y. D. Wang, S. J. Chua, M. S. Sander, P. Chen, S. Tripathy, and C. G. Fonstad, “Fabrication and properties of nanoporous GaN films,” Appl. Phys. Lett. 85(5), 816 (2004).
[Crossref]

Schubert, E. F.

E. F. Schubert and J. K. Kim, “Solid-state light sources getting smart,” Science 308(5726), 1274–1278 (2005).
[Crossref] [PubMed]

Shin, H. J.

D. W. Jeon, W. M. Choi, H. J. Shin, S. M. Yoon, J. Y. Choi, L. W. Jang, and I. H. Lee, “Nanopillar InGaN/GaN light emitting diodes integrated with homogeneous multilayer graphene electrodes,” J. Mater. Chem. 21(44), 17688–17692 (2011).
[Crossref]

Shmidt, N. M.

A. Y. Polyakov, A. V. Govorkov, N. B. Smirnov, A. V. Markov, I. H. Lee, J. W. Ju, S. Y. Karpov, N. M. Shmidt, and S. J. Pearton, “Properties of undoped GaN/InGaN multi-quantum-wells and GaN/InGaN p-n junctions prepared by epitaxial lateral overgrowth,” J. Appl. Phys. 105(12), 123708 (2009).
[Crossref]

Smirnov, N. B.

A. Y. Polyakov, A. V. Govorkov, N. B. Smirnov, A. V. Markov, I. H. Lee, J. W. Ju, S. Y. Karpov, N. M. Shmidt, and S. J. Pearton, “Properties of undoped GaN/InGaN multi-quantum-wells and GaN/InGaN p-n junctions prepared by epitaxial lateral overgrowth,” J. Appl. Phys. 105(12), 123708 (2009).
[Crossref]

A. Y. Polyakov, A. V. Govorkov, N. B. Smirnov, A. V. Markov, I. H. Lee, J. W. Ju, and S. J. Pearton, “Anisotropy of In incorporation in GaN/InGaN multiquantum wells prepared by epitaxial lateral overgrowth,” Appl. Phys. Lett. 94(14), 142103 (2009).
[Crossref]

Son, J. H.

J. H. Son, J. U. Kim, Y. H. Song, B. J. Kim, C. J. Ryu, and J. L. Lee, “Design rule of nanostructures in light-emitting diodes for complete elimination of total internal reflection,” Adv. Mater. 24(17), 2259–2262 (2012).
[Crossref] [PubMed]

Song, Y. H.

J. H. Son, J. U. Kim, Y. H. Song, B. J. Kim, C. J. Ryu, and J. L. Lee, “Design rule of nanostructures in light-emitting diodes for complete elimination of total internal reflection,” Adv. Mater. 24(17), 2259–2262 (2012).
[Crossref] [PubMed]

Surya, C.

W. K. Fong, K. K. Leung, and C. Surya, “Characterization of GaN/InGaN multiple quantum wells grown on sapphire substrates by nano-scale epitaxial lateral overgrowth technique,” J. Cryst. Growth 318(1), 488–491 (2011).
[Crossref]

Takeuchi, T.

T. Takeuchi, H. Amano, and I. Akasaki, “Theoretical study of orientation dependence of piezoelectric effects in wurtzite strained GaInN/GaN heterostructures and quantum wells,” Jpn. J. Appl. Phys. 39(Part 1, No. 2A), 413–416 (2000).
[Crossref]

Tripathy, S.

Y. D. Wang, S. J. Chua, M. S. Sander, P. Chen, S. Tripathy, and C. G. Fonstad, “Fabrication and properties of nanoporous GaN films,” Appl. Phys. Lett. 85(5), 816 (2004).
[Crossref]

Uthirakumar, P.

H. G. Kim, H. K. Kim, H. Y. Kim, J. H. Ryu, J. H. Kang, N. Han, P. Uthirakumar, and C. H. Hong, “Impact of two-floor air prism arrays as an embedded reflector for enhancing the output power of InGaN/GaN light emitting diodes,” Appl. Phys. Lett. 95(22), 221110 (2009).
[Crossref]

Wang, S. C.

C. H. Chiu, H. H. Yen, C. L. Chao, Z. Y. Li, P. Yu, H. C. Kuo, T. C. Lu, S. C. Wang, K. M. Lau, and S. J. Cheng, “Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template,” Appl. Phys. Lett. 93(8), 081108 (2008).
[Crossref]

Wang, W. K.

D. S. Wuu, W. K. Wang, K. S. Wen, S. C. Huang, S. H. Lin, S. Y. Huang, C. F. Lin, and R. H. Horng, “Defect reduction and efficiency improvement of near-ultraviolet emitters via laterally overgrown GaN on a GaN/patterned sapphire template,” Appl. Phys. Lett. 89(16), 161105 (2006).
[Crossref]

Wang, Y. D.

Y. D. Wang, S. J. Chua, M. S. Sander, P. Chen, S. Tripathy, and C. G. Fonstad, “Fabrication and properties of nanoporous GaN films,” Appl. Phys. Lett. 85(5), 816 (2004).
[Crossref]

Weber, Z. L.

R. D. Dupuis, J. Park, P. A. Grudowski, C. J. Eiting, and Z. L. Weber, “Selective-area and lateral epitaxial overgrowth of III-N materials by metalorganic chemical vapor deposition,” J. Cryst. Growth 195(1-4), 340–345 (1998).
[Crossref]

Wen, K. S.

D. S. Wuu, W. K. Wang, K. S. Wen, S. C. Huang, S. H. Lin, S. Y. Huang, C. F. Lin, and R. H. Horng, “Defect reduction and efficiency improvement of near-ultraviolet emitters via laterally overgrown GaN on a GaN/patterned sapphire template,” Appl. Phys. Lett. 89(16), 161105 (2006).
[Crossref]

Wuu, D. S.

D. S. Wuu, W. K. Wang, K. S. Wen, S. C. Huang, S. H. Lin, S. Y. Huang, C. F. Lin, and R. H. Horng, “Defect reduction and efficiency improvement of near-ultraviolet emitters via laterally overgrown GaN on a GaN/patterned sapphire template,” Appl. Phys. Lett. 89(16), 161105 (2006).
[Crossref]

Yang, H.

D. G. Zhao, D. S. Jiang, H. Yang, J. J. Zhu, Z. S. Liu, S. M. Zhang, J. W. Liang, X. Li, X. Y. Li, and H. M. Gong, “Role of edge dislocations in enhancing the yellow luminescence of n-type GaN,” Appl. Phys. Lett. 88(24), 241917 (2006).
[Crossref]

Yen, H. H.

C. H. Chiu, H. H. Yen, C. L. Chao, Z. Y. Li, P. Yu, H. C. Kuo, T. C. Lu, S. C. Wang, K. M. Lau, and S. J. Cheng, “Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template,” Appl. Phys. Lett. 93(8), 081108 (2008).
[Crossref]

Yoon, S. M.

D. W. Jeon, W. M. Choi, H. J. Shin, S. M. Yoon, J. Y. Choi, L. W. Jang, and I. H. Lee, “Nanopillar InGaN/GaN light emitting diodes integrated with homogeneous multilayer graphene electrodes,” J. Mater. Chem. 21(44), 17688–17692 (2011).
[Crossref]

Yu, P.

C. H. Chiu, H. H. Yen, C. L. Chao, Z. Y. Li, P. Yu, H. C. Kuo, T. C. Lu, S. C. Wang, K. M. Lau, and S. J. Cheng, “Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template,” Appl. Phys. Lett. 93(8), 081108 (2008).
[Crossref]

Zhang, S. M.

D. G. Zhao, D. S. Jiang, H. Yang, J. J. Zhu, Z. S. Liu, S. M. Zhang, J. W. Liang, X. Li, X. Y. Li, and H. M. Gong, “Role of edge dislocations in enhancing the yellow luminescence of n-type GaN,” Appl. Phys. Lett. 88(24), 241917 (2006).
[Crossref]

Zhao, D. G.

D. G. Zhao, D. S. Jiang, H. Yang, J. J. Zhu, Z. S. Liu, S. M. Zhang, J. W. Liang, X. Li, X. Y. Li, and H. M. Gong, “Role of edge dislocations in enhancing the yellow luminescence of n-type GaN,” Appl. Phys. Lett. 88(24), 241917 (2006).
[Crossref]

Zhu, J. J.

D. G. Zhao, D. S. Jiang, H. Yang, J. J. Zhu, Z. S. Liu, S. M. Zhang, J. W. Liang, X. Li, X. Y. Li, and H. M. Gong, “Role of edge dislocations in enhancing the yellow luminescence of n-type GaN,” Appl. Phys. Lett. 88(24), 241917 (2006).
[Crossref]

Adv. Mater. (1)

J. H. Son, J. U. Kim, Y. H. Song, B. J. Kim, C. J. Ryu, and J. L. Lee, “Design rule of nanostructures in light-emitting diodes for complete elimination of total internal reflection,” Adv. Mater. 24(17), 2259–2262 (2012).
[Crossref] [PubMed]

Appl. Phys. Lett. (6)

H. G. Kim, H. K. Kim, H. Y. Kim, J. H. Ryu, J. H. Kang, N. Han, P. Uthirakumar, and C. H. Hong, “Impact of two-floor air prism arrays as an embedded reflector for enhancing the output power of InGaN/GaN light emitting diodes,” Appl. Phys. Lett. 95(22), 221110 (2009).
[Crossref]

C. H. Chiu, H. H. Yen, C. L. Chao, Z. Y. Li, P. Yu, H. C. Kuo, T. C. Lu, S. C. Wang, K. M. Lau, and S. J. Cheng, “Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template,” Appl. Phys. Lett. 93(8), 081108 (2008).
[Crossref]

D. S. Wuu, W. K. Wang, K. S. Wen, S. C. Huang, S. H. Lin, S. Y. Huang, C. F. Lin, and R. H. Horng, “Defect reduction and efficiency improvement of near-ultraviolet emitters via laterally overgrown GaN on a GaN/patterned sapphire template,” Appl. Phys. Lett. 89(16), 161105 (2006).
[Crossref]

D. G. Zhao, D. S. Jiang, H. Yang, J. J. Zhu, Z. S. Liu, S. M. Zhang, J. W. Liang, X. Li, X. Y. Li, and H. M. Gong, “Role of edge dislocations in enhancing the yellow luminescence of n-type GaN,” Appl. Phys. Lett. 88(24), 241917 (2006).
[Crossref]

A. Y. Polyakov, A. V. Govorkov, N. B. Smirnov, A. V. Markov, I. H. Lee, J. W. Ju, and S. J. Pearton, “Anisotropy of In incorporation in GaN/InGaN multiquantum wells prepared by epitaxial lateral overgrowth,” Appl. Phys. Lett. 94(14), 142103 (2009).
[Crossref]

Y. D. Wang, S. J. Chua, M. S. Sander, P. Chen, S. Tripathy, and C. G. Fonstad, “Fabrication and properties of nanoporous GaN films,” Appl. Phys. Lett. 85(5), 816 (2004).
[Crossref]

IEEE Photon. Technol. Lett. (2)

J. M. Park, J. K. Oh, K. W. Kwon, Y. H. Kim, S. S. Jo, J. K. Lee, and S. W. Ryu, “Improved light output of photonic crystal light-emitting diode fabricated by anodized aluminum oxide nano-patterns,” IEEE Photon. Technol. Lett. 20(4), 321–323 (2008).
[Crossref]

C. H. Kuo, L. C. Chang, and H. M. Chou, “Current spreading improvement in GaN-based light-emitting diode grown on nano-rod GaN template,” IEEE Photon. Technol. Lett. 24(7), 608–610 (2012).
[Crossref]

J. Appl. Phys. (1)

A. Y. Polyakov, A. V. Govorkov, N. B. Smirnov, A. V. Markov, I. H. Lee, J. W. Ju, S. Y. Karpov, N. M. Shmidt, and S. J. Pearton, “Properties of undoped GaN/InGaN multi-quantum-wells and GaN/InGaN p-n junctions prepared by epitaxial lateral overgrowth,” J. Appl. Phys. 105(12), 123708 (2009).
[Crossref]

J. Cryst. Growth (2)

W. K. Fong, K. K. Leung, and C. Surya, “Characterization of GaN/InGaN multiple quantum wells grown on sapphire substrates by nano-scale epitaxial lateral overgrowth technique,” J. Cryst. Growth 318(1), 488–491 (2011).
[Crossref]

R. D. Dupuis, J. Park, P. A. Grudowski, C. J. Eiting, and Z. L. Weber, “Selective-area and lateral epitaxial overgrowth of III-N materials by metalorganic chemical vapor deposition,” J. Cryst. Growth 195(1-4), 340–345 (1998).
[Crossref]

J. Mater. Chem. (1)

D. W. Jeon, W. M. Choi, H. J. Shin, S. M. Yoon, J. Y. Choi, L. W. Jang, and I. H. Lee, “Nanopillar InGaN/GaN light emitting diodes integrated with homogeneous multilayer graphene electrodes,” J. Mater. Chem. 21(44), 17688–17692 (2011).
[Crossref]

Jpn. J. Appl. Phys. (1)

T. Takeuchi, H. Amano, and I. Akasaki, “Theoretical study of orientation dependence of piezoelectric effects in wurtzite strained GaInN/GaN heterostructures and quantum wells,” Jpn. J. Appl. Phys. 39(Part 1, No. 2A), 413–416 (2000).
[Crossref]

Mater. Sci. Eng. Rep. (1)

J. Robertson, “Diamond-like amorphous carbon,” Mater. Sci. Eng. Rep. 37(4-6), 129–281 (2002).
[Crossref]

Opt. Express (2)

Science (1)

E. F. Schubert and J. K. Kim, “Solid-state light sources getting smart,” Science 308(5726), 1274–1278 (2005).
[Crossref] [PubMed]

Other (1)

J. Piprek and S. Nakamura, “Physics of high-power InGaN/GaN lasers” IEEE Proc. Optoelectron, 149, 145–151 (2002).
[Crossref]

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Figures (4)

Fig. 1
Fig. 1 A schematic illustration of the SiO2-embedded LED structure.
Fig. 2
Fig. 2 (a,b) Plane and tilted view FE-SEM images of the embedded SiO2 nanoparticles between nanopillar GaN templates. (c) Cross-sectional FE-SEM images of the SiO2-embedded LED structure regrown by MOCVD and (d) Normalski image of surface morphology after regrowth.
Fig. 3
Fig. 3 Schematic L-I characteristics of the reference LED and SiO2-embedded LEDs, respectively.
Fig. 4
Fig. 4 EL peak wavelength as a function of injection current (5~350 mA) of the SiO2-embedded LED. The inset image is the graph of peak shift as a function of injection current of the reference LED and the SiO2-embedded LED, respectively.

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