Abstract

The injection current dependence of optical polarization of ultraviolet (UV) light-emitting diodes (LEDs) emitting at wavelength of 310 nm and 277 nm was investigated by electroluminescence (EL) measurements. For both diodes, it was found that the degree of polarization (DOP) decreased obviously as the injection current increased. We attribute the decrease in DOP to the different changing trend of the intensity of the light emission from transverse electric (TE) polarization (E⊥c) and transverse magnetic (TM) polarization (E∥c) as the injected carriers occupy higher states above k = 0 with increasing the injection current. For the 277 nm LED, even the polarization switching from TE to TM mode was observed.

© 2014 Optical Society of America

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  1. K. Davitt, Y.-K. Song, W. Patterson Iii, A. V. Nurmikko, M. Gherasimova, J. Han, Y.-L. Pan, and R. K. Chang, “290 and 340 nm UV LED arrays for fluorescence detection from single airborne particles,” Opt. Express 13(23), 9548–9555 (2005).
    [CrossRef] [PubMed]
  2. C. J. Collins, A. V. Sampath, G. A. Garrett, W. L. Sarney, H. Shen, M. Wraback, A. Y. Nikiforov, G. S. Cargill, and V. Dierolf, “Enhanced room-temperature luminescence efficiency through carrier localization in AlxGa1−xN alloys,” Appl. Phys. Lett. 86(3), 031916 (2005).
    [CrossRef]
  3. M. A. Würtele, T. Kolbe, M. Lipsz, A. Külberg, M. Weyers, M. Kneissl, and M. Jekel, “Application of GaN-based ultraviolet-C light emitting diodes - UV LEDs - for water disinfection,” Water Res. 45(3), 1481–1489 (2011).
    [CrossRef] [PubMed]
  4. H. Tsuzuki, F. Mori, K. Takeda, T. Ichikawa, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Yoshida, M. Kuwabara, Y. Yamashita, and H. Kan, “High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer,” Phys. Status Solidi 206(6), 1199–1204 (2009).
    [CrossRef]
  5. J. R. Grandusky, S. R. Gibb, M. C. Mendrick, and L. J. Schowalter, “Properties of Mid-Ultraviolet Light Emitting Diodes Fabricated from Pseudomorphic Layers on Bulk Aluminum Nitride Substrates,” Appl. Phys. Express 3(7), 072103 (2010).
    [CrossRef]
  6. W. Sun, M. Shatalov, J. Deng, X. Hu, J. Yang, A. Lunev, Y. Bilenko, M. Shur, and R. Gaska, “Efficiency droop in 245–247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power,” Appl. Phys. Lett. 96(6), 061102 (2010).
    [CrossRef]
  7. H. Hirayama, Y. Tsukada, T. Maeda, and N. Kamata, “Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer,” Appl. Phys. Express 3(3), 031002 (2010).
    [CrossRef]
  8. M. Kneissl, T. Kolbe, C. Chua, V. Kueller, N. Lobo, J. Stellmach, A. Knauer, H. Rodriguez, S. Einfeldt, Z. Yang, N. M. Johnson, and M. Weyers, “Advances in group III-nitride-based deep UV light-emitting diode technology,” Semicond. Sci. Technol. 26(1), 014036 (2011).
    [CrossRef]
  9. K. B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, “Unique optical properties of AlGaN alloys and related ultraviolet emitters,” Appl. Phys. Lett. 84(25), 5264–5266 (2004).
    [CrossRef]
  10. H. Kawanishi, M. Senuma, and T. Nukui, “Anisotropic polarization characteristics of lasing and spontaneous surface and edge emissions from deep-ultraviolet (λ≈240 nm) AlGaN multiple-quantum-well lasers,” Appl. Phys. Lett. 89(4), 041126 (2006).
    [CrossRef]
  11. T. Kolbe, A. Knauer, C. Chua, Z. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett. 97(17), 171105 (2010).
    [CrossRef]
  12. J. E. Northrup, C. L. Chua, Z. Yang, T. Wunderer, M. Kneissl, N. M. Johnson, and T. Kolbe, “Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells,” Appl. Phys. Lett. 100(2), 021101 (2012).
    [CrossRef]
  13. T. M. Altahtamouni, J. Y. Lin, and H. X. Jiang, “Optical polarization in c-plane Al-rich AlN/AlxGa1-xN single quantum wells,” Appl. Phys. Lett. 101(4), 042103 (2012).
    [CrossRef]
  14. T. Kolbe, A. Knauer, C. Chua, Z. Yang, V. Kueller, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Effect of temperature and strain on the optical polarization of (In)(Al)GaN ultraviolet light emitting diodes,” Appl. Phys. Lett. 99(26), 261105 (2011).
    [CrossRef]
  15. T. K. Sharma, D. Naveh, and E. Towe, “Strain-driven light-polarization switching in deep ultraviolet nitride emitters,” Phys. Rev. B 84(3), 035305 (2011).
    [CrossRef]
  16. C. Netzel, A. Knauer, and M. Weyers, “Impact of light polarization on photoluminescence intensity and quantum efficiency in AlGaN and AlInGaN layers,” Appl. Phys. Lett. 101(24), 242102 (2012).
    [CrossRef]
  17. S. Fan, Z. Qin, C. He, X. Wang, B. Shen, and G. Zhang, “Strain effect on the optical polarization properties of c-plane Al₀.₂₆Ga₀.₇₄N/GaN superlattices,” Opt. Express 22(6), 6322–6328 (2014).
    [CrossRef] [PubMed]
  18. S.-H. Park and J.-I. Shim, “Carrier density dependence of polarization switching characteristics of light emission in deep-ultraviolet AlGaN/AlN quantum well structures,” Appl. Phys. Lett. 102(22), 221109 (2013).
    [CrossRef]
  19. Y. Taniyasu, M. Kasu, and T. Makimoto, “Radiation and polarization properties of free-exciton emission from AlN (0001) surface,” Appl. Phys. Lett. 90(26), 261911 (2007).
    [CrossRef]
  20. R. G. Banal, M. Funato, and Y. Kawakami, “Optical anisotropy in [0001]-oriented AlxGa1−xN/AlN quantum wells (x>0.69),” Phys. Rev. B 79(12), 121308 (2009).
    [CrossRef]
  21. P. Rinke, M. Winkelnkemper, A. Qteish, D. Bimberg, J. Neugebauer, and M. Scheffler, “Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN,” Phys. Rev. B 77(7), 075202 (2008).
    [CrossRef]

2014 (1)

2013 (1)

S.-H. Park and J.-I. Shim, “Carrier density dependence of polarization switching characteristics of light emission in deep-ultraviolet AlGaN/AlN quantum well structures,” Appl. Phys. Lett. 102(22), 221109 (2013).
[CrossRef]

2012 (3)

J. E. Northrup, C. L. Chua, Z. Yang, T. Wunderer, M. Kneissl, N. M. Johnson, and T. Kolbe, “Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells,” Appl. Phys. Lett. 100(2), 021101 (2012).
[CrossRef]

T. M. Altahtamouni, J. Y. Lin, and H. X. Jiang, “Optical polarization in c-plane Al-rich AlN/AlxGa1-xN single quantum wells,” Appl. Phys. Lett. 101(4), 042103 (2012).
[CrossRef]

C. Netzel, A. Knauer, and M. Weyers, “Impact of light polarization on photoluminescence intensity and quantum efficiency in AlGaN and AlInGaN layers,” Appl. Phys. Lett. 101(24), 242102 (2012).
[CrossRef]

2011 (4)

T. Kolbe, A. Knauer, C. Chua, Z. Yang, V. Kueller, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Effect of temperature and strain on the optical polarization of (In)(Al)GaN ultraviolet light emitting diodes,” Appl. Phys. Lett. 99(26), 261105 (2011).
[CrossRef]

T. K. Sharma, D. Naveh, and E. Towe, “Strain-driven light-polarization switching in deep ultraviolet nitride emitters,” Phys. Rev. B 84(3), 035305 (2011).
[CrossRef]

M. A. Würtele, T. Kolbe, M. Lipsz, A. Külberg, M. Weyers, M. Kneissl, and M. Jekel, “Application of GaN-based ultraviolet-C light emitting diodes - UV LEDs - for water disinfection,” Water Res. 45(3), 1481–1489 (2011).
[CrossRef] [PubMed]

M. Kneissl, T. Kolbe, C. Chua, V. Kueller, N. Lobo, J. Stellmach, A. Knauer, H. Rodriguez, S. Einfeldt, Z. Yang, N. M. Johnson, and M. Weyers, “Advances in group III-nitride-based deep UV light-emitting diode technology,” Semicond. Sci. Technol. 26(1), 014036 (2011).
[CrossRef]

2010 (4)

J. R. Grandusky, S. R. Gibb, M. C. Mendrick, and L. J. Schowalter, “Properties of Mid-Ultraviolet Light Emitting Diodes Fabricated from Pseudomorphic Layers on Bulk Aluminum Nitride Substrates,” Appl. Phys. Express 3(7), 072103 (2010).
[CrossRef]

W. Sun, M. Shatalov, J. Deng, X. Hu, J. Yang, A. Lunev, Y. Bilenko, M. Shur, and R. Gaska, “Efficiency droop in 245–247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power,” Appl. Phys. Lett. 96(6), 061102 (2010).
[CrossRef]

H. Hirayama, Y. Tsukada, T. Maeda, and N. Kamata, “Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer,” Appl. Phys. Express 3(3), 031002 (2010).
[CrossRef]

T. Kolbe, A. Knauer, C. Chua, Z. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett. 97(17), 171105 (2010).
[CrossRef]

2009 (2)

H. Tsuzuki, F. Mori, K. Takeda, T. Ichikawa, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Yoshida, M. Kuwabara, Y. Yamashita, and H. Kan, “High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer,” Phys. Status Solidi 206(6), 1199–1204 (2009).
[CrossRef]

R. G. Banal, M. Funato, and Y. Kawakami, “Optical anisotropy in [0001]-oriented AlxGa1−xN/AlN quantum wells (x>0.69),” Phys. Rev. B 79(12), 121308 (2009).
[CrossRef]

2008 (1)

P. Rinke, M. Winkelnkemper, A. Qteish, D. Bimberg, J. Neugebauer, and M. Scheffler, “Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN,” Phys. Rev. B 77(7), 075202 (2008).
[CrossRef]

2007 (1)

Y. Taniyasu, M. Kasu, and T. Makimoto, “Radiation and polarization properties of free-exciton emission from AlN (0001) surface,” Appl. Phys. Lett. 90(26), 261911 (2007).
[CrossRef]

2006 (1)

H. Kawanishi, M. Senuma, and T. Nukui, “Anisotropic polarization characteristics of lasing and spontaneous surface and edge emissions from deep-ultraviolet (λ≈240 nm) AlGaN multiple-quantum-well lasers,” Appl. Phys. Lett. 89(4), 041126 (2006).
[CrossRef]

2005 (2)

K. Davitt, Y.-K. Song, W. Patterson Iii, A. V. Nurmikko, M. Gherasimova, J. Han, Y.-L. Pan, and R. K. Chang, “290 and 340 nm UV LED arrays for fluorescence detection from single airborne particles,” Opt. Express 13(23), 9548–9555 (2005).
[CrossRef] [PubMed]

C. J. Collins, A. V. Sampath, G. A. Garrett, W. L. Sarney, H. Shen, M. Wraback, A. Y. Nikiforov, G. S. Cargill, and V. Dierolf, “Enhanced room-temperature luminescence efficiency through carrier localization in AlxGa1−xN alloys,” Appl. Phys. Lett. 86(3), 031916 (2005).
[CrossRef]

2004 (1)

K. B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, “Unique optical properties of AlGaN alloys and related ultraviolet emitters,” Appl. Phys. Lett. 84(25), 5264–5266 (2004).
[CrossRef]

Akasaki, I.

H. Tsuzuki, F. Mori, K. Takeda, T. Ichikawa, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Yoshida, M. Kuwabara, Y. Yamashita, and H. Kan, “High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer,” Phys. Status Solidi 206(6), 1199–1204 (2009).
[CrossRef]

Altahtamouni, T. M.

T. M. Altahtamouni, J. Y. Lin, and H. X. Jiang, “Optical polarization in c-plane Al-rich AlN/AlxGa1-xN single quantum wells,” Appl. Phys. Lett. 101(4), 042103 (2012).
[CrossRef]

Amano, H.

H. Tsuzuki, F. Mori, K. Takeda, T. Ichikawa, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Yoshida, M. Kuwabara, Y. Yamashita, and H. Kan, “High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer,” Phys. Status Solidi 206(6), 1199–1204 (2009).
[CrossRef]

Banal, R. G.

R. G. Banal, M. Funato, and Y. Kawakami, “Optical anisotropy in [0001]-oriented AlxGa1−xN/AlN quantum wells (x>0.69),” Phys. Rev. B 79(12), 121308 (2009).
[CrossRef]

Bilenko, Y.

W. Sun, M. Shatalov, J. Deng, X. Hu, J. Yang, A. Lunev, Y. Bilenko, M. Shur, and R. Gaska, “Efficiency droop in 245–247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power,” Appl. Phys. Lett. 96(6), 061102 (2010).
[CrossRef]

Bimberg, D.

P. Rinke, M. Winkelnkemper, A. Qteish, D. Bimberg, J. Neugebauer, and M. Scheffler, “Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN,” Phys. Rev. B 77(7), 075202 (2008).
[CrossRef]

Cargill, G. S.

C. J. Collins, A. V. Sampath, G. A. Garrett, W. L. Sarney, H. Shen, M. Wraback, A. Y. Nikiforov, G. S. Cargill, and V. Dierolf, “Enhanced room-temperature luminescence efficiency through carrier localization in AlxGa1−xN alloys,” Appl. Phys. Lett. 86(3), 031916 (2005).
[CrossRef]

Chang, R. K.

Chua, C.

M. Kneissl, T. Kolbe, C. Chua, V. Kueller, N. Lobo, J. Stellmach, A. Knauer, H. Rodriguez, S. Einfeldt, Z. Yang, N. M. Johnson, and M. Weyers, “Advances in group III-nitride-based deep UV light-emitting diode technology,” Semicond. Sci. Technol. 26(1), 014036 (2011).
[CrossRef]

T. Kolbe, A. Knauer, C. Chua, Z. Yang, V. Kueller, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Effect of temperature and strain on the optical polarization of (In)(Al)GaN ultraviolet light emitting diodes,” Appl. Phys. Lett. 99(26), 261105 (2011).
[CrossRef]

T. Kolbe, A. Knauer, C. Chua, Z. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett. 97(17), 171105 (2010).
[CrossRef]

Chua, C. L.

J. E. Northrup, C. L. Chua, Z. Yang, T. Wunderer, M. Kneissl, N. M. Johnson, and T. Kolbe, “Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells,” Appl. Phys. Lett. 100(2), 021101 (2012).
[CrossRef]

Collins, C. J.

C. J. Collins, A. V. Sampath, G. A. Garrett, W. L. Sarney, H. Shen, M. Wraback, A. Y. Nikiforov, G. S. Cargill, and V. Dierolf, “Enhanced room-temperature luminescence efficiency through carrier localization in AlxGa1−xN alloys,” Appl. Phys. Lett. 86(3), 031916 (2005).
[CrossRef]

Davitt, K.

Deng, J.

W. Sun, M. Shatalov, J. Deng, X. Hu, J. Yang, A. Lunev, Y. Bilenko, M. Shur, and R. Gaska, “Efficiency droop in 245–247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power,” Appl. Phys. Lett. 96(6), 061102 (2010).
[CrossRef]

Dierolf, V.

C. J. Collins, A. V. Sampath, G. A. Garrett, W. L. Sarney, H. Shen, M. Wraback, A. Y. Nikiforov, G. S. Cargill, and V. Dierolf, “Enhanced room-temperature luminescence efficiency through carrier localization in AlxGa1−xN alloys,” Appl. Phys. Lett. 86(3), 031916 (2005).
[CrossRef]

Einfeldt, S.

M. Kneissl, T. Kolbe, C. Chua, V. Kueller, N. Lobo, J. Stellmach, A. Knauer, H. Rodriguez, S. Einfeldt, Z. Yang, N. M. Johnson, and M. Weyers, “Advances in group III-nitride-based deep UV light-emitting diode technology,” Semicond. Sci. Technol. 26(1), 014036 (2011).
[CrossRef]

T. Kolbe, A. Knauer, C. Chua, Z. Yang, V. Kueller, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Effect of temperature and strain on the optical polarization of (In)(Al)GaN ultraviolet light emitting diodes,” Appl. Phys. Lett. 99(26), 261105 (2011).
[CrossRef]

T. Kolbe, A. Knauer, C. Chua, Z. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett. 97(17), 171105 (2010).
[CrossRef]

Fan, S.

Funato, M.

R. G. Banal, M. Funato, and Y. Kawakami, “Optical anisotropy in [0001]-oriented AlxGa1−xN/AlN quantum wells (x>0.69),” Phys. Rev. B 79(12), 121308 (2009).
[CrossRef]

Garrett, G. A.

C. J. Collins, A. V. Sampath, G. A. Garrett, W. L. Sarney, H. Shen, M. Wraback, A. Y. Nikiforov, G. S. Cargill, and V. Dierolf, “Enhanced room-temperature luminescence efficiency through carrier localization in AlxGa1−xN alloys,” Appl. Phys. Lett. 86(3), 031916 (2005).
[CrossRef]

Gaska, R.

W. Sun, M. Shatalov, J. Deng, X. Hu, J. Yang, A. Lunev, Y. Bilenko, M. Shur, and R. Gaska, “Efficiency droop in 245–247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power,” Appl. Phys. Lett. 96(6), 061102 (2010).
[CrossRef]

Gherasimova, M.

Gibb, S. R.

J. R. Grandusky, S. R. Gibb, M. C. Mendrick, and L. J. Schowalter, “Properties of Mid-Ultraviolet Light Emitting Diodes Fabricated from Pseudomorphic Layers on Bulk Aluminum Nitride Substrates,” Appl. Phys. Express 3(7), 072103 (2010).
[CrossRef]

Grandusky, J. R.

J. R. Grandusky, S. R. Gibb, M. C. Mendrick, and L. J. Schowalter, “Properties of Mid-Ultraviolet Light Emitting Diodes Fabricated from Pseudomorphic Layers on Bulk Aluminum Nitride Substrates,” Appl. Phys. Express 3(7), 072103 (2010).
[CrossRef]

Han, J.

He, C.

Hirayama, H.

H. Hirayama, Y. Tsukada, T. Maeda, and N. Kamata, “Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer,” Appl. Phys. Express 3(3), 031002 (2010).
[CrossRef]

Hu, X.

W. Sun, M. Shatalov, J. Deng, X. Hu, J. Yang, A. Lunev, Y. Bilenko, M. Shur, and R. Gaska, “Efficiency droop in 245–247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power,” Appl. Phys. Lett. 96(6), 061102 (2010).
[CrossRef]

Ichikawa, T.

H. Tsuzuki, F. Mori, K. Takeda, T. Ichikawa, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Yoshida, M. Kuwabara, Y. Yamashita, and H. Kan, “High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer,” Phys. Status Solidi 206(6), 1199–1204 (2009).
[CrossRef]

Iwaya, M.

H. Tsuzuki, F. Mori, K. Takeda, T. Ichikawa, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Yoshida, M. Kuwabara, Y. Yamashita, and H. Kan, “High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer,” Phys. Status Solidi 206(6), 1199–1204 (2009).
[CrossRef]

Jekel, M.

M. A. Würtele, T. Kolbe, M. Lipsz, A. Külberg, M. Weyers, M. Kneissl, and M. Jekel, “Application of GaN-based ultraviolet-C light emitting diodes - UV LEDs - for water disinfection,” Water Res. 45(3), 1481–1489 (2011).
[CrossRef] [PubMed]

Jiang, H. X.

T. M. Altahtamouni, J. Y. Lin, and H. X. Jiang, “Optical polarization in c-plane Al-rich AlN/AlxGa1-xN single quantum wells,” Appl. Phys. Lett. 101(4), 042103 (2012).
[CrossRef]

K. B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, “Unique optical properties of AlGaN alloys and related ultraviolet emitters,” Appl. Phys. Lett. 84(25), 5264–5266 (2004).
[CrossRef]

Johnson, N. M.

J. E. Northrup, C. L. Chua, Z. Yang, T. Wunderer, M. Kneissl, N. M. Johnson, and T. Kolbe, “Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells,” Appl. Phys. Lett. 100(2), 021101 (2012).
[CrossRef]

T. Kolbe, A. Knauer, C. Chua, Z. Yang, V. Kueller, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Effect of temperature and strain on the optical polarization of (In)(Al)GaN ultraviolet light emitting diodes,” Appl. Phys. Lett. 99(26), 261105 (2011).
[CrossRef]

M. Kneissl, T. Kolbe, C. Chua, V. Kueller, N. Lobo, J. Stellmach, A. Knauer, H. Rodriguez, S. Einfeldt, Z. Yang, N. M. Johnson, and M. Weyers, “Advances in group III-nitride-based deep UV light-emitting diode technology,” Semicond. Sci. Technol. 26(1), 014036 (2011).
[CrossRef]

T. Kolbe, A. Knauer, C. Chua, Z. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett. 97(17), 171105 (2010).
[CrossRef]

Kamata, N.

H. Hirayama, Y. Tsukada, T. Maeda, and N. Kamata, “Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer,” Appl. Phys. Express 3(3), 031002 (2010).
[CrossRef]

Kamiyama, S.

H. Tsuzuki, F. Mori, K. Takeda, T. Ichikawa, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Yoshida, M. Kuwabara, Y. Yamashita, and H. Kan, “High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer,” Phys. Status Solidi 206(6), 1199–1204 (2009).
[CrossRef]

Kan, H.

H. Tsuzuki, F. Mori, K. Takeda, T. Ichikawa, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Yoshida, M. Kuwabara, Y. Yamashita, and H. Kan, “High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer,” Phys. Status Solidi 206(6), 1199–1204 (2009).
[CrossRef]

Kasu, M.

Y. Taniyasu, M. Kasu, and T. Makimoto, “Radiation and polarization properties of free-exciton emission from AlN (0001) surface,” Appl. Phys. Lett. 90(26), 261911 (2007).
[CrossRef]

Kawakami, Y.

R. G. Banal, M. Funato, and Y. Kawakami, “Optical anisotropy in [0001]-oriented AlxGa1−xN/AlN quantum wells (x>0.69),” Phys. Rev. B 79(12), 121308 (2009).
[CrossRef]

Kawanishi, H.

H. Kawanishi, M. Senuma, and T. Nukui, “Anisotropic polarization characteristics of lasing and spontaneous surface and edge emissions from deep-ultraviolet (λ≈240 nm) AlGaN multiple-quantum-well lasers,” Appl. Phys. Lett. 89(4), 041126 (2006).
[CrossRef]

Knauer, A.

C. Netzel, A. Knauer, and M. Weyers, “Impact of light polarization on photoluminescence intensity and quantum efficiency in AlGaN and AlInGaN layers,” Appl. Phys. Lett. 101(24), 242102 (2012).
[CrossRef]

T. Kolbe, A. Knauer, C. Chua, Z. Yang, V. Kueller, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Effect of temperature and strain on the optical polarization of (In)(Al)GaN ultraviolet light emitting diodes,” Appl. Phys. Lett. 99(26), 261105 (2011).
[CrossRef]

M. Kneissl, T. Kolbe, C. Chua, V. Kueller, N. Lobo, J. Stellmach, A. Knauer, H. Rodriguez, S. Einfeldt, Z. Yang, N. M. Johnson, and M. Weyers, “Advances in group III-nitride-based deep UV light-emitting diode technology,” Semicond. Sci. Technol. 26(1), 014036 (2011).
[CrossRef]

T. Kolbe, A. Knauer, C. Chua, Z. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett. 97(17), 171105 (2010).
[CrossRef]

Kneissl, M.

J. E. Northrup, C. L. Chua, Z. Yang, T. Wunderer, M. Kneissl, N. M. Johnson, and T. Kolbe, “Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells,” Appl. Phys. Lett. 100(2), 021101 (2012).
[CrossRef]

T. Kolbe, A. Knauer, C. Chua, Z. Yang, V. Kueller, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Effect of temperature and strain on the optical polarization of (In)(Al)GaN ultraviolet light emitting diodes,” Appl. Phys. Lett. 99(26), 261105 (2011).
[CrossRef]

M. Kneissl, T. Kolbe, C. Chua, V. Kueller, N. Lobo, J. Stellmach, A. Knauer, H. Rodriguez, S. Einfeldt, Z. Yang, N. M. Johnson, and M. Weyers, “Advances in group III-nitride-based deep UV light-emitting diode technology,” Semicond. Sci. Technol. 26(1), 014036 (2011).
[CrossRef]

M. A. Würtele, T. Kolbe, M. Lipsz, A. Külberg, M. Weyers, M. Kneissl, and M. Jekel, “Application of GaN-based ultraviolet-C light emitting diodes - UV LEDs - for water disinfection,” Water Res. 45(3), 1481–1489 (2011).
[CrossRef] [PubMed]

T. Kolbe, A. Knauer, C. Chua, Z. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett. 97(17), 171105 (2010).
[CrossRef]

Kolbe, T.

J. E. Northrup, C. L. Chua, Z. Yang, T. Wunderer, M. Kneissl, N. M. Johnson, and T. Kolbe, “Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells,” Appl. Phys. Lett. 100(2), 021101 (2012).
[CrossRef]

T. Kolbe, A. Knauer, C. Chua, Z. Yang, V. Kueller, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Effect of temperature and strain on the optical polarization of (In)(Al)GaN ultraviolet light emitting diodes,” Appl. Phys. Lett. 99(26), 261105 (2011).
[CrossRef]

M. A. Würtele, T. Kolbe, M. Lipsz, A. Külberg, M. Weyers, M. Kneissl, and M. Jekel, “Application of GaN-based ultraviolet-C light emitting diodes - UV LEDs - for water disinfection,” Water Res. 45(3), 1481–1489 (2011).
[CrossRef] [PubMed]

M. Kneissl, T. Kolbe, C. Chua, V. Kueller, N. Lobo, J. Stellmach, A. Knauer, H. Rodriguez, S. Einfeldt, Z. Yang, N. M. Johnson, and M. Weyers, “Advances in group III-nitride-based deep UV light-emitting diode technology,” Semicond. Sci. Technol. 26(1), 014036 (2011).
[CrossRef]

T. Kolbe, A. Knauer, C. Chua, Z. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett. 97(17), 171105 (2010).
[CrossRef]

Kueller, V.

T. Kolbe, A. Knauer, C. Chua, Z. Yang, V. Kueller, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Effect of temperature and strain on the optical polarization of (In)(Al)GaN ultraviolet light emitting diodes,” Appl. Phys. Lett. 99(26), 261105 (2011).
[CrossRef]

M. Kneissl, T. Kolbe, C. Chua, V. Kueller, N. Lobo, J. Stellmach, A. Knauer, H. Rodriguez, S. Einfeldt, Z. Yang, N. M. Johnson, and M. Weyers, “Advances in group III-nitride-based deep UV light-emitting diode technology,” Semicond. Sci. Technol. 26(1), 014036 (2011).
[CrossRef]

Külberg, A.

M. A. Würtele, T. Kolbe, M. Lipsz, A. Külberg, M. Weyers, M. Kneissl, and M. Jekel, “Application of GaN-based ultraviolet-C light emitting diodes - UV LEDs - for water disinfection,” Water Res. 45(3), 1481–1489 (2011).
[CrossRef] [PubMed]

Kuwabara, M.

H. Tsuzuki, F. Mori, K. Takeda, T. Ichikawa, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Yoshida, M. Kuwabara, Y. Yamashita, and H. Kan, “High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer,” Phys. Status Solidi 206(6), 1199–1204 (2009).
[CrossRef]

Li, J.

K. B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, “Unique optical properties of AlGaN alloys and related ultraviolet emitters,” Appl. Phys. Lett. 84(25), 5264–5266 (2004).
[CrossRef]

Lin, J. Y.

T. M. Altahtamouni, J. Y. Lin, and H. X. Jiang, “Optical polarization in c-plane Al-rich AlN/AlxGa1-xN single quantum wells,” Appl. Phys. Lett. 101(4), 042103 (2012).
[CrossRef]

K. B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, “Unique optical properties of AlGaN alloys and related ultraviolet emitters,” Appl. Phys. Lett. 84(25), 5264–5266 (2004).
[CrossRef]

Lipsz, M.

M. A. Würtele, T. Kolbe, M. Lipsz, A. Külberg, M. Weyers, M. Kneissl, and M. Jekel, “Application of GaN-based ultraviolet-C light emitting diodes - UV LEDs - for water disinfection,” Water Res. 45(3), 1481–1489 (2011).
[CrossRef] [PubMed]

Lobo, N.

M. Kneissl, T. Kolbe, C. Chua, V. Kueller, N. Lobo, J. Stellmach, A. Knauer, H. Rodriguez, S. Einfeldt, Z. Yang, N. M. Johnson, and M. Weyers, “Advances in group III-nitride-based deep UV light-emitting diode technology,” Semicond. Sci. Technol. 26(1), 014036 (2011).
[CrossRef]

Lunev, A.

W. Sun, M. Shatalov, J. Deng, X. Hu, J. Yang, A. Lunev, Y. Bilenko, M. Shur, and R. Gaska, “Efficiency droop in 245–247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power,” Appl. Phys. Lett. 96(6), 061102 (2010).
[CrossRef]

Maeda, T.

H. Hirayama, Y. Tsukada, T. Maeda, and N. Kamata, “Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer,” Appl. Phys. Express 3(3), 031002 (2010).
[CrossRef]

Makimoto, T.

Y. Taniyasu, M. Kasu, and T. Makimoto, “Radiation and polarization properties of free-exciton emission from AlN (0001) surface,” Appl. Phys. Lett. 90(26), 261911 (2007).
[CrossRef]

Mendrick, M. C.

J. R. Grandusky, S. R. Gibb, M. C. Mendrick, and L. J. Schowalter, “Properties of Mid-Ultraviolet Light Emitting Diodes Fabricated from Pseudomorphic Layers on Bulk Aluminum Nitride Substrates,” Appl. Phys. Express 3(7), 072103 (2010).
[CrossRef]

Mori, F.

H. Tsuzuki, F. Mori, K. Takeda, T. Ichikawa, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Yoshida, M. Kuwabara, Y. Yamashita, and H. Kan, “High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer,” Phys. Status Solidi 206(6), 1199–1204 (2009).
[CrossRef]

Nakarmi, M. L.

K. B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, “Unique optical properties of AlGaN alloys and related ultraviolet emitters,” Appl. Phys. Lett. 84(25), 5264–5266 (2004).
[CrossRef]

Nam, K. B.

K. B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, “Unique optical properties of AlGaN alloys and related ultraviolet emitters,” Appl. Phys. Lett. 84(25), 5264–5266 (2004).
[CrossRef]

Naveh, D.

T. K. Sharma, D. Naveh, and E. Towe, “Strain-driven light-polarization switching in deep ultraviolet nitride emitters,” Phys. Rev. B 84(3), 035305 (2011).
[CrossRef]

Netzel, C.

C. Netzel, A. Knauer, and M. Weyers, “Impact of light polarization on photoluminescence intensity and quantum efficiency in AlGaN and AlInGaN layers,” Appl. Phys. Lett. 101(24), 242102 (2012).
[CrossRef]

Neugebauer, J.

P. Rinke, M. Winkelnkemper, A. Qteish, D. Bimberg, J. Neugebauer, and M. Scheffler, “Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN,” Phys. Rev. B 77(7), 075202 (2008).
[CrossRef]

Nikiforov, A. Y.

C. J. Collins, A. V. Sampath, G. A. Garrett, W. L. Sarney, H. Shen, M. Wraback, A. Y. Nikiforov, G. S. Cargill, and V. Dierolf, “Enhanced room-temperature luminescence efficiency through carrier localization in AlxGa1−xN alloys,” Appl. Phys. Lett. 86(3), 031916 (2005).
[CrossRef]

Northrup, J. E.

J. E. Northrup, C. L. Chua, Z. Yang, T. Wunderer, M. Kneissl, N. M. Johnson, and T. Kolbe, “Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells,” Appl. Phys. Lett. 100(2), 021101 (2012).
[CrossRef]

Nukui, T.

H. Kawanishi, M. Senuma, and T. Nukui, “Anisotropic polarization characteristics of lasing and spontaneous surface and edge emissions from deep-ultraviolet (λ≈240 nm) AlGaN multiple-quantum-well lasers,” Appl. Phys. Lett. 89(4), 041126 (2006).
[CrossRef]

Nurmikko, A. V.

Pan, Y.-L.

Park, S.-H.

S.-H. Park and J.-I. Shim, “Carrier density dependence of polarization switching characteristics of light emission in deep-ultraviolet AlGaN/AlN quantum well structures,” Appl. Phys. Lett. 102(22), 221109 (2013).
[CrossRef]

Patterson Iii, W.

Qin, Z.

Qteish, A.

P. Rinke, M. Winkelnkemper, A. Qteish, D. Bimberg, J. Neugebauer, and M. Scheffler, “Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN,” Phys. Rev. B 77(7), 075202 (2008).
[CrossRef]

Rinke, P.

P. Rinke, M. Winkelnkemper, A. Qteish, D. Bimberg, J. Neugebauer, and M. Scheffler, “Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN,” Phys. Rev. B 77(7), 075202 (2008).
[CrossRef]

Rodriguez, H.

M. Kneissl, T. Kolbe, C. Chua, V. Kueller, N. Lobo, J. Stellmach, A. Knauer, H. Rodriguez, S. Einfeldt, Z. Yang, N. M. Johnson, and M. Weyers, “Advances in group III-nitride-based deep UV light-emitting diode technology,” Semicond. Sci. Technol. 26(1), 014036 (2011).
[CrossRef]

Sampath, A. V.

C. J. Collins, A. V. Sampath, G. A. Garrett, W. L. Sarney, H. Shen, M. Wraback, A. Y. Nikiforov, G. S. Cargill, and V. Dierolf, “Enhanced room-temperature luminescence efficiency through carrier localization in AlxGa1−xN alloys,” Appl. Phys. Lett. 86(3), 031916 (2005).
[CrossRef]

Sarney, W. L.

C. J. Collins, A. V. Sampath, G. A. Garrett, W. L. Sarney, H. Shen, M. Wraback, A. Y. Nikiforov, G. S. Cargill, and V. Dierolf, “Enhanced room-temperature luminescence efficiency through carrier localization in AlxGa1−xN alloys,” Appl. Phys. Lett. 86(3), 031916 (2005).
[CrossRef]

Scheffler, M.

P. Rinke, M. Winkelnkemper, A. Qteish, D. Bimberg, J. Neugebauer, and M. Scheffler, “Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN,” Phys. Rev. B 77(7), 075202 (2008).
[CrossRef]

Schowalter, L. J.

J. R. Grandusky, S. R. Gibb, M. C. Mendrick, and L. J. Schowalter, “Properties of Mid-Ultraviolet Light Emitting Diodes Fabricated from Pseudomorphic Layers on Bulk Aluminum Nitride Substrates,” Appl. Phys. Express 3(7), 072103 (2010).
[CrossRef]

Senuma, M.

H. Kawanishi, M. Senuma, and T. Nukui, “Anisotropic polarization characteristics of lasing and spontaneous surface and edge emissions from deep-ultraviolet (λ≈240 nm) AlGaN multiple-quantum-well lasers,” Appl. Phys. Lett. 89(4), 041126 (2006).
[CrossRef]

Sharma, T. K.

T. K. Sharma, D. Naveh, and E. Towe, “Strain-driven light-polarization switching in deep ultraviolet nitride emitters,” Phys. Rev. B 84(3), 035305 (2011).
[CrossRef]

Shatalov, M.

W. Sun, M. Shatalov, J. Deng, X. Hu, J. Yang, A. Lunev, Y. Bilenko, M. Shur, and R. Gaska, “Efficiency droop in 245–247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power,” Appl. Phys. Lett. 96(6), 061102 (2010).
[CrossRef]

Shen, B.

Shen, H.

C. J. Collins, A. V. Sampath, G. A. Garrett, W. L. Sarney, H. Shen, M. Wraback, A. Y. Nikiforov, G. S. Cargill, and V. Dierolf, “Enhanced room-temperature luminescence efficiency through carrier localization in AlxGa1−xN alloys,” Appl. Phys. Lett. 86(3), 031916 (2005).
[CrossRef]

Shim, J.-I.

S.-H. Park and J.-I. Shim, “Carrier density dependence of polarization switching characteristics of light emission in deep-ultraviolet AlGaN/AlN quantum well structures,” Appl. Phys. Lett. 102(22), 221109 (2013).
[CrossRef]

Shur, M.

W. Sun, M. Shatalov, J. Deng, X. Hu, J. Yang, A. Lunev, Y. Bilenko, M. Shur, and R. Gaska, “Efficiency droop in 245–247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power,” Appl. Phys. Lett. 96(6), 061102 (2010).
[CrossRef]

Song, Y.-K.

Stellmach, J.

M. Kneissl, T. Kolbe, C. Chua, V. Kueller, N. Lobo, J. Stellmach, A. Knauer, H. Rodriguez, S. Einfeldt, Z. Yang, N. M. Johnson, and M. Weyers, “Advances in group III-nitride-based deep UV light-emitting diode technology,” Semicond. Sci. Technol. 26(1), 014036 (2011).
[CrossRef]

Sun, W.

W. Sun, M. Shatalov, J. Deng, X. Hu, J. Yang, A. Lunev, Y. Bilenko, M. Shur, and R. Gaska, “Efficiency droop in 245–247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power,” Appl. Phys. Lett. 96(6), 061102 (2010).
[CrossRef]

Takeda, K.

H. Tsuzuki, F. Mori, K. Takeda, T. Ichikawa, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Yoshida, M. Kuwabara, Y. Yamashita, and H. Kan, “High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer,” Phys. Status Solidi 206(6), 1199–1204 (2009).
[CrossRef]

Taniyasu, Y.

Y. Taniyasu, M. Kasu, and T. Makimoto, “Radiation and polarization properties of free-exciton emission from AlN (0001) surface,” Appl. Phys. Lett. 90(26), 261911 (2007).
[CrossRef]

Towe, E.

T. K. Sharma, D. Naveh, and E. Towe, “Strain-driven light-polarization switching in deep ultraviolet nitride emitters,” Phys. Rev. B 84(3), 035305 (2011).
[CrossRef]

Tsukada, Y.

H. Hirayama, Y. Tsukada, T. Maeda, and N. Kamata, “Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer,” Appl. Phys. Express 3(3), 031002 (2010).
[CrossRef]

Tsuzuki, H.

H. Tsuzuki, F. Mori, K. Takeda, T. Ichikawa, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Yoshida, M. Kuwabara, Y. Yamashita, and H. Kan, “High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer,” Phys. Status Solidi 206(6), 1199–1204 (2009).
[CrossRef]

Vogt, P.

T. Kolbe, A. Knauer, C. Chua, Z. Yang, V. Kueller, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Effect of temperature and strain on the optical polarization of (In)(Al)GaN ultraviolet light emitting diodes,” Appl. Phys. Lett. 99(26), 261105 (2011).
[CrossRef]

T. Kolbe, A. Knauer, C. Chua, Z. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett. 97(17), 171105 (2010).
[CrossRef]

Wang, X.

Weyers, M.

C. Netzel, A. Knauer, and M. Weyers, “Impact of light polarization on photoluminescence intensity and quantum efficiency in AlGaN and AlInGaN layers,” Appl. Phys. Lett. 101(24), 242102 (2012).
[CrossRef]

T. Kolbe, A. Knauer, C. Chua, Z. Yang, V. Kueller, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Effect of temperature and strain on the optical polarization of (In)(Al)GaN ultraviolet light emitting diodes,” Appl. Phys. Lett. 99(26), 261105 (2011).
[CrossRef]

M. A. Würtele, T. Kolbe, M. Lipsz, A. Külberg, M. Weyers, M. Kneissl, and M. Jekel, “Application of GaN-based ultraviolet-C light emitting diodes - UV LEDs - for water disinfection,” Water Res. 45(3), 1481–1489 (2011).
[CrossRef] [PubMed]

M. Kneissl, T. Kolbe, C. Chua, V. Kueller, N. Lobo, J. Stellmach, A. Knauer, H. Rodriguez, S. Einfeldt, Z. Yang, N. M. Johnson, and M. Weyers, “Advances in group III-nitride-based deep UV light-emitting diode technology,” Semicond. Sci. Technol. 26(1), 014036 (2011).
[CrossRef]

T. Kolbe, A. Knauer, C. Chua, Z. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett. 97(17), 171105 (2010).
[CrossRef]

Winkelnkemper, M.

P. Rinke, M. Winkelnkemper, A. Qteish, D. Bimberg, J. Neugebauer, and M. Scheffler, “Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN,” Phys. Rev. B 77(7), 075202 (2008).
[CrossRef]

Wraback, M.

C. J. Collins, A. V. Sampath, G. A. Garrett, W. L. Sarney, H. Shen, M. Wraback, A. Y. Nikiforov, G. S. Cargill, and V. Dierolf, “Enhanced room-temperature luminescence efficiency through carrier localization in AlxGa1−xN alloys,” Appl. Phys. Lett. 86(3), 031916 (2005).
[CrossRef]

Wunderer, T.

J. E. Northrup, C. L. Chua, Z. Yang, T. Wunderer, M. Kneissl, N. M. Johnson, and T. Kolbe, “Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells,” Appl. Phys. Lett. 100(2), 021101 (2012).
[CrossRef]

Würtele, M. A.

M. A. Würtele, T. Kolbe, M. Lipsz, A. Külberg, M. Weyers, M. Kneissl, and M. Jekel, “Application of GaN-based ultraviolet-C light emitting diodes - UV LEDs - for water disinfection,” Water Res. 45(3), 1481–1489 (2011).
[CrossRef] [PubMed]

Yamashita, Y.

H. Tsuzuki, F. Mori, K. Takeda, T. Ichikawa, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Yoshida, M. Kuwabara, Y. Yamashita, and H. Kan, “High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer,” Phys. Status Solidi 206(6), 1199–1204 (2009).
[CrossRef]

Yang, J.

W. Sun, M. Shatalov, J. Deng, X. Hu, J. Yang, A. Lunev, Y. Bilenko, M. Shur, and R. Gaska, “Efficiency droop in 245–247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power,” Appl. Phys. Lett. 96(6), 061102 (2010).
[CrossRef]

Yang, Z.

J. E. Northrup, C. L. Chua, Z. Yang, T. Wunderer, M. Kneissl, N. M. Johnson, and T. Kolbe, “Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells,” Appl. Phys. Lett. 100(2), 021101 (2012).
[CrossRef]

T. Kolbe, A. Knauer, C. Chua, Z. Yang, V. Kueller, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Effect of temperature and strain on the optical polarization of (In)(Al)GaN ultraviolet light emitting diodes,” Appl. Phys. Lett. 99(26), 261105 (2011).
[CrossRef]

M. Kneissl, T. Kolbe, C. Chua, V. Kueller, N. Lobo, J. Stellmach, A. Knauer, H. Rodriguez, S. Einfeldt, Z. Yang, N. M. Johnson, and M. Weyers, “Advances in group III-nitride-based deep UV light-emitting diode technology,” Semicond. Sci. Technol. 26(1), 014036 (2011).
[CrossRef]

T. Kolbe, A. Knauer, C. Chua, Z. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett. 97(17), 171105 (2010).
[CrossRef]

Yoshida, H.

H. Tsuzuki, F. Mori, K. Takeda, T. Ichikawa, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Yoshida, M. Kuwabara, Y. Yamashita, and H. Kan, “High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer,” Phys. Status Solidi 206(6), 1199–1204 (2009).
[CrossRef]

Zhang, G.

Appl. Phys. Express (2)

J. R. Grandusky, S. R. Gibb, M. C. Mendrick, and L. J. Schowalter, “Properties of Mid-Ultraviolet Light Emitting Diodes Fabricated from Pseudomorphic Layers on Bulk Aluminum Nitride Substrates,” Appl. Phys. Express 3(7), 072103 (2010).
[CrossRef]

H. Hirayama, Y. Tsukada, T. Maeda, and N. Kamata, “Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer,” Appl. Phys. Express 3(3), 031002 (2010).
[CrossRef]

Appl. Phys. Lett. (11)

W. Sun, M. Shatalov, J. Deng, X. Hu, J. Yang, A. Lunev, Y. Bilenko, M. Shur, and R. Gaska, “Efficiency droop in 245–247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power,” Appl. Phys. Lett. 96(6), 061102 (2010).
[CrossRef]

C. J. Collins, A. V. Sampath, G. A. Garrett, W. L. Sarney, H. Shen, M. Wraback, A. Y. Nikiforov, G. S. Cargill, and V. Dierolf, “Enhanced room-temperature luminescence efficiency through carrier localization in AlxGa1−xN alloys,” Appl. Phys. Lett. 86(3), 031916 (2005).
[CrossRef]

K. B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, “Unique optical properties of AlGaN alloys and related ultraviolet emitters,” Appl. Phys. Lett. 84(25), 5264–5266 (2004).
[CrossRef]

H. Kawanishi, M. Senuma, and T. Nukui, “Anisotropic polarization characteristics of lasing and spontaneous surface and edge emissions from deep-ultraviolet (λ≈240 nm) AlGaN multiple-quantum-well lasers,” Appl. Phys. Lett. 89(4), 041126 (2006).
[CrossRef]

T. Kolbe, A. Knauer, C. Chua, Z. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett. 97(17), 171105 (2010).
[CrossRef]

J. E. Northrup, C. L. Chua, Z. Yang, T. Wunderer, M. Kneissl, N. M. Johnson, and T. Kolbe, “Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells,” Appl. Phys. Lett. 100(2), 021101 (2012).
[CrossRef]

T. M. Altahtamouni, J. Y. Lin, and H. X. Jiang, “Optical polarization in c-plane Al-rich AlN/AlxGa1-xN single quantum wells,” Appl. Phys. Lett. 101(4), 042103 (2012).
[CrossRef]

T. Kolbe, A. Knauer, C. Chua, Z. Yang, V. Kueller, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Effect of temperature and strain on the optical polarization of (In)(Al)GaN ultraviolet light emitting diodes,” Appl. Phys. Lett. 99(26), 261105 (2011).
[CrossRef]

S.-H. Park and J.-I. Shim, “Carrier density dependence of polarization switching characteristics of light emission in deep-ultraviolet AlGaN/AlN quantum well structures,” Appl. Phys. Lett. 102(22), 221109 (2013).
[CrossRef]

Y. Taniyasu, M. Kasu, and T. Makimoto, “Radiation and polarization properties of free-exciton emission from AlN (0001) surface,” Appl. Phys. Lett. 90(26), 261911 (2007).
[CrossRef]

C. Netzel, A. Knauer, and M. Weyers, “Impact of light polarization on photoluminescence intensity and quantum efficiency in AlGaN and AlInGaN layers,” Appl. Phys. Lett. 101(24), 242102 (2012).
[CrossRef]

Opt. Express (2)

Phys. Rev. B (3)

R. G. Banal, M. Funato, and Y. Kawakami, “Optical anisotropy in [0001]-oriented AlxGa1−xN/AlN quantum wells (x>0.69),” Phys. Rev. B 79(12), 121308 (2009).
[CrossRef]

P. Rinke, M. Winkelnkemper, A. Qteish, D. Bimberg, J. Neugebauer, and M. Scheffler, “Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN,” Phys. Rev. B 77(7), 075202 (2008).
[CrossRef]

T. K. Sharma, D. Naveh, and E. Towe, “Strain-driven light-polarization switching in deep ultraviolet nitride emitters,” Phys. Rev. B 84(3), 035305 (2011).
[CrossRef]

Phys. Status Solidi (1)

H. Tsuzuki, F. Mori, K. Takeda, T. Ichikawa, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Yoshida, M. Kuwabara, Y. Yamashita, and H. Kan, “High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer,” Phys. Status Solidi 206(6), 1199–1204 (2009).
[CrossRef]

Semicond. Sci. Technol. (1)

M. Kneissl, T. Kolbe, C. Chua, V. Kueller, N. Lobo, J. Stellmach, A. Knauer, H. Rodriguez, S. Einfeldt, Z. Yang, N. M. Johnson, and M. Weyers, “Advances in group III-nitride-based deep UV light-emitting diode technology,” Semicond. Sci. Technol. 26(1), 014036 (2011).
[CrossRef]

Water Res. (1)

M. A. Würtele, T. Kolbe, M. Lipsz, A. Külberg, M. Weyers, M. Kneissl, and M. Jekel, “Application of GaN-based ultraviolet-C light emitting diodes - UV LEDs - for water disinfection,” Water Res. 45(3), 1481–1489 (2011).
[CrossRef] [PubMed]

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Figures (4)

Fig. 1
Fig. 1

Schematic diagram of the experimental setup for measuring the DOP of edge-emitting EL from UV LEDs.

Fig. 2
Fig. 2

EL spectra of 310 nm LED for TE and TM polarizations at the pulse current of (a) 20 mA, (b) 70 mA, and (c) 145 mA with a pulse frequency of 1 kHz and duty cycle of 0.1% at room temperature. The experimental data has been normalized.

Fig. 3
Fig. 3

EL spectra of 277 nm LED for TE and TM polarizations at the pulse current of (a) 20 mA and (b) 145 mA with a pulse frequency of 1 kHz and duty cycle of 0.1% at room temperature. The experimental data has been normalized.

Fig. 4
Fig. 4

DOP of edge-emitting EL from 310 and 277 nm LED as a function of injection current with a pulse frequency of 1 kHz and duty cycle of 0.1% at room temperature.

Equations (1)

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m * ( A l x G a 1x N )=x m * ( AlN )+( 1x ) m * (GaN),

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