Abstract

An integrated laser is a key component in silicon based photonic integrated circuits. Beyond incorporating the gain medium, on-chip cavity design is critical to device performance and yield. Typical recent results involve cavities utilizing distributed Bragg gratings that require ultra-fine feature sizes. We propose to build laser cavity on silicon using a Sagnac loop mirror and a micro-ring wavelength filter for the first time. The Sagnac loop mirror provides broadband reflection, which is simple to fabricate, has an accurately-controlled reflectivity, and negligible excess loss. Single-mode operation is achieved with the intra-cavity micro-ring filter and, using a 248 nm stepper, the laser wavelength can be lithographically controlled within a standard deviation of 3.6 nm. We demonstrate a proof-of-concept device lasing at 1551.7 nm, with 44 dB SMSR, 1.2 MHz linewidth and 4.8 mW on-chip output power.

© 2014 Optical Society of America

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  1. A. Mekis, S. Gloeckner, G. Masini, A. Narasimha, T. Pinguet, S. Sahni, and P. De Dobbelaere, “A grating-coupler-enabled CMOS photonics platform,” IEEE J. Sel. Top. Quantum Electron. 17(3), 597–608 (2011).
    [CrossRef]
  2. D. Feng, S. Jatar, J. Luff, and M. Asghari, “Micron-scale silicon photonic devices and circuits,” in Optical Fiber Communications Conference (OFC) (2014), paper Th4C.
    [CrossRef]
  3. S. Assefa, S. Shank, W. Green, M. Khater, E. Kiewra, C. Reinholm, S. Kamlapurkar, A. Rylyakov, C. Schow, F. Horst, H. Pan, T. Topuria, P. Rice, D. M. Gill, J. Rosenberg, T. Barwicz, M. Yang, J. Proesel, J. Hofrichter, B. Offrein, X. Gu, W. Haensch, J. Ellis-Monaghan, and Y. Vlasov, “A 90nm CMOS integrated nano-photonics technology for 25 Gbps WDM optical communications applications,” in IEEE International Electron Devices Meeting (IEDM) (2012), pp. 33.8.1–33.8.3.
  4. P. Dong, X. Liu, S. Chandrasekhar, L. L. Buhl, R. Aroca, and Y.-K. Chen, “Monolithic silicon photonic integrated circuits for compact 100+ Gb/s coherent optical receivers and transmitters,” IEEE J. Sel. Top. Quantum Electron. 20(4), 6100108 (2014).
    [CrossRef]
  5. T.-Y. Liow, J.-F. Song, X. Tu, A. E.-J. Lim, Q. Fang, N. Duan, M. Yu, and G.-Q. Luo, “Silicon optical interconnect device technologies for 40Gb/s and beyond,” IEEE J. Sel. Top. Quantum Electron. 19(2), 8200312 (2013).
    [CrossRef]
  6. S. K. Selvaraja, W. Bogaerts, P. Dumon, D. Van Thourhout, and R. Baets, “Subnanometer linewidth uniformity in silicon nanophotonic waveguide devices using CMOS fabrication technology,” IEEE J. Sel. Top. Quantum Electron. 16(1), 316–324 (2010).
    [CrossRef]
  7. A. Novack, Y. Liu, R. Ding, M. Gould, T. Baehr-Jones, Q. Li, Y. Yang, Y. Ma, Y. Zhang, K. Padmaraju, K. Bergmen, A. E.-J. Lim, G.-Q. Lo, and M. Hochberg, “A 30 GHz silicon photonic platform,” Proc. SPIE 8781, 878107 (2013).
    [CrossRef]
  8. D. J. Thomson, F. Y. Gardes, J.-M. Fedeli, S. Zlatanovic, Y. Hu, B. P.-P. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett. 24(4), 234–236 (2012).
    [CrossRef]
  9. Y. Zhang, S. Yang, Y. Yang, M. Gould, N. Ophir, A. E.-J. Lim, G.-Q. Lo, P. Magill, K. Bergman, T. Baehr-Jones, and M. Hochberg, “A high-responsivity photodetector absent metal-germanium direct contact,” Opt. Express 22(9), 11367–11375 (2014).
    [CrossRef] [PubMed]
  10. L. Vivien, A. Polzer, D. Marris-Morini, J. Osmond, J. M. Hartmann, P. Crozat, E. Cassan, C. Kopp, H. Zimmermann, and J. M. Fédéli, “Zero-bias 40Gbit/s germanium waveguide photodetector on silicon,” Opt. Express 20(2), 1096–1101 (2012).
    [CrossRef] [PubMed]
  11. Y. Zhang, S. Yang, A. E.-J. Lim, G.-Q. Lo, C. Galland, T. Baehr-Jones, and M. Hochberg, “A compact and low loss Y-junction for submicron silicon waveguide,” Opt. Express 21(1), 1310–1316 (2013).
    [CrossRef] [PubMed]
  12. Y. Zhang, M. Streshinsky, A. Novack, Y. Ma, S. Yang, A. E.-J. Lim, G.-Q. Lo, T. Baehr-Jones, and M. Hochberg, “A compact and low-loss silicon waveguide crossing for O-band optical interconnect,” Proc. SPIE 8990, 899002 (2014).
    [CrossRef]
  13. W. Bogaerts, S. K. Selvaraja, P. Dumon, J. Brouckaert, K. De Vos, D. Van Thourhout, and R. Baets, “Silicon-on-insulator spectral filters fabricated with CMOS technology,” IEEE J. Sel. Top. Quantum Electron. 16(1), 33–44 (2010).
    [CrossRef]
  14. R. E. Camacho-Aguilera, Y. Cai, N. Patel, J. T. Bessette, M. Romagnoli, L. C. Kimerling, and J. Michel, “An electrically pumped germanium laser,” Opt. Express 20(10), 11316–11320 (2012).
    [CrossRef] [PubMed]
  15. T. Wang, H. Liu, A. Lee, F. Pozzi, and A. Seeds, “1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates,” Opt. Express 19(12), 11381–11386 (2011).
    [CrossRef] [PubMed]
  16. A. W. Fang, R. Jones, H. Park, O. Cohen, O. Raday, M. J. Paniccia, and J. E. Bowers, “Integrated AlGaInAs-silicon evanescent race track laser and photodetector,” Opt. Express 15(5), 2315–2322 (2007).
    [CrossRef] [PubMed]
  17. S. Keyvaninia, G. Roelkens, D. Van Thourhout, C. Jany, M. Lamponi, A. Le Liepvre, F. Lelarge, D. Make, G.-H. Duan, D. Bordel, and J.-M. Fedeli, “Demonstration of a heterogeneously integrated III-V/SOI single wavelength tunable laser,” Opt. Express 21(3), 3784–3792 (2013).
    [CrossRef] [PubMed]
  18. T. Creazzo, E. Marchena, S. B. Krasulick, P. K. Yu, D. Van Orden, J. Y. Spann, C. C. Blivin, L. He, H. Cai, J. M. Dallesasse, R. J. Stone, and A. Mizrahi, “Integrated tunable CMOS laser,” Opt. Express 21(23), 28048–28053 (2013).
    [CrossRef] [PubMed]
  19. A. J. Zilkie, P. Seddighian, B. J. Bijlani, W. Qian, D. C. Lee, S. Fathololoumi, J. Fong, R. Shafiiha, D. Feng, B. J. Luff, X. Zheng, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “Power-efficient III-V/silicon external cavity DBR lasers,” Opt. Express 20(21), 23456–23462 (2012).
    [CrossRef] [PubMed]
  20. S. Tanaka, S.-H. Jeong, S. Sekiguchi, T. Kurahashi, Y. Tanaka, and K. Morito, “High-output-power, single-wavelength silicon hybrid laser using precise flip-chip bonding technology,” Opt. Express 20(27), 28057–28069 (2012).
    [CrossRef] [PubMed]
  21. S. Yang, Y. Zhang, D. W. Grund, G. A. Ejzak, Y. Liu, A. Novack, D. Prather, A. E.-J. Lim, G.-Q. Lo, T. Baehr-Jones, and M. Hochberg, “A single adiabatic microring-based laser in 220 nm silicon-on-insulator,” Opt. Express 22(1), 1172–1180 (2014).
    [CrossRef] [PubMed]
  22. J. H. Lee, I. Shubin, J. Yao, J. Bickford, Y. Luo, S. Lin, S. S. Djordjevic, H. D. Thacker, J. E. Cunningham, K. Raj, X. Zheng, and A. V. Krishnamoorthy, “High power and widely tunable Si hybrid external-cavity laser for power efficient Si photonics WDM links,” Opt. Express 22(7), 7678–7685 (2014).
    [CrossRef] [PubMed]
  23. X. Wang, W. Shi, H. Yun, S. Grist, N. A. F. Jaeger, and L. Chrostowski, “Narrow-band waveguide Bragg gratings on SOI wafers with CMOS-compatible fabrication process,” Opt. Express 20(14), 15547–15558 (2012).
    [CrossRef] [PubMed]
  24. B. Liu, A. Shakouri, and J. E. Bowers, “Passive microring-resonator-coupled lasers,” Appl. Phys. Lett. 79(22), 3561–3563 (2001).
    [CrossRef]
  25. A. V. Krishnamoorthy, X. Zheng, G. Li, J. Yao, T. Pinguet, A. Mekis, H. Thacker, I. Shubin, Y. Luo, K. Raj, and J. E. Cunningham, “Exploiting CMOS manufacturing to reduce tuning requirements for resonant optical devices,” IEEE Photon. J. 3(3), 567–579 (2011).
    [CrossRef]
  26. M. R. Watts, “Adiabatic microring resonators,” Opt. Lett. 35(19), 3231–3233 (2010).
    [CrossRef] [PubMed]
  27. J. C. Mikkelsen, W. D. Sacher, and J. K.-S. Poon, “Adiabatically widened silicon microrings for improved variation tolerance,” Opt. Express 22(8), 9659–9666 (2014).
    [CrossRef] [PubMed]
  28. S. K. Selvaraja, P. Jaenen, W. Bogaerts, D. Van Thourhout, P. Dumon, and R. Baets, “Fabrication of photonic wire and crystal circuits in silicon-on-insulator using 193-nm optical lithography,” J. Lightwave Technol. 27(18), 4076–4083 (2009).
    [CrossRef]
  29. S.-H. Jeong, D. Shimura, T. Simoyama, M. Seki, N. Yokoyama, M. Ohtsuka, K. Koshino, T. Horikawa, Y. Tanaka, and K. Morito, “Low-loss, flat-topped and spectrally uniform silicon-nanowire-based 5th-order CROW fabricated by ArF-immersion lithography process on a 300-mm SOI wafer,” Opt. Express 21(25), 30163–30174 (2013).
    [CrossRef] [PubMed]
  30. K. Padmaraju, J. Chan, L. Chen, M. Lipson, and K. Bergman, “Thermal stabilization of a microring modulator using feedback control,” Opt. Express 20(27), 27999–28008 (2012).
    [CrossRef] [PubMed]
  31. P. Dong, W. Qian, H. Liang, R. Shafiiha, D. Feng, G. Li, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “Thermally tunable silicon racetrack resonators with ultralow tuning power,” Opt. Express 18(19), 20298–20304 (2010).
    [CrossRef] [PubMed]

2014 (6)

P. Dong, X. Liu, S. Chandrasekhar, L. L. Buhl, R. Aroca, and Y.-K. Chen, “Monolithic silicon photonic integrated circuits for compact 100+ Gb/s coherent optical receivers and transmitters,” IEEE J. Sel. Top. Quantum Electron. 20(4), 6100108 (2014).
[CrossRef]

Y. Zhang, M. Streshinsky, A. Novack, Y. Ma, S. Yang, A. E.-J. Lim, G.-Q. Lo, T. Baehr-Jones, and M. Hochberg, “A compact and low-loss silicon waveguide crossing for O-band optical interconnect,” Proc. SPIE 8990, 899002 (2014).
[CrossRef]

S. Yang, Y. Zhang, D. W. Grund, G. A. Ejzak, Y. Liu, A. Novack, D. Prather, A. E.-J. Lim, G.-Q. Lo, T. Baehr-Jones, and M. Hochberg, “A single adiabatic microring-based laser in 220 nm silicon-on-insulator,” Opt. Express 22(1), 1172–1180 (2014).
[CrossRef] [PubMed]

J. H. Lee, I. Shubin, J. Yao, J. Bickford, Y. Luo, S. Lin, S. S. Djordjevic, H. D. Thacker, J. E. Cunningham, K. Raj, X. Zheng, and A. V. Krishnamoorthy, “High power and widely tunable Si hybrid external-cavity laser for power efficient Si photonics WDM links,” Opt. Express 22(7), 7678–7685 (2014).
[CrossRef] [PubMed]

J. C. Mikkelsen, W. D. Sacher, and J. K.-S. Poon, “Adiabatically widened silicon microrings for improved variation tolerance,” Opt. Express 22(8), 9659–9666 (2014).
[CrossRef] [PubMed]

Y. Zhang, S. Yang, Y. Yang, M. Gould, N. Ophir, A. E.-J. Lim, G.-Q. Lo, P. Magill, K. Bergman, T. Baehr-Jones, and M. Hochberg, “A high-responsivity photodetector absent metal-germanium direct contact,” Opt. Express 22(9), 11367–11375 (2014).
[CrossRef] [PubMed]

2013 (6)

Y. Zhang, S. Yang, A. E.-J. Lim, G.-Q. Lo, C. Galland, T. Baehr-Jones, and M. Hochberg, “A compact and low loss Y-junction for submicron silicon waveguide,” Opt. Express 21(1), 1310–1316 (2013).
[CrossRef] [PubMed]

S. Keyvaninia, G. Roelkens, D. Van Thourhout, C. Jany, M. Lamponi, A. Le Liepvre, F. Lelarge, D. Make, G.-H. Duan, D. Bordel, and J.-M. Fedeli, “Demonstration of a heterogeneously integrated III-V/SOI single wavelength tunable laser,” Opt. Express 21(3), 3784–3792 (2013).
[CrossRef] [PubMed]

T. Creazzo, E. Marchena, S. B. Krasulick, P. K. Yu, D. Van Orden, J. Y. Spann, C. C. Blivin, L. He, H. Cai, J. M. Dallesasse, R. J. Stone, and A. Mizrahi, “Integrated tunable CMOS laser,” Opt. Express 21(23), 28048–28053 (2013).
[CrossRef] [PubMed]

S.-H. Jeong, D. Shimura, T. Simoyama, M. Seki, N. Yokoyama, M. Ohtsuka, K. Koshino, T. Horikawa, Y. Tanaka, and K. Morito, “Low-loss, flat-topped and spectrally uniform silicon-nanowire-based 5th-order CROW fabricated by ArF-immersion lithography process on a 300-mm SOI wafer,” Opt. Express 21(25), 30163–30174 (2013).
[CrossRef] [PubMed]

T.-Y. Liow, J.-F. Song, X. Tu, A. E.-J. Lim, Q. Fang, N. Duan, M. Yu, and G.-Q. Luo, “Silicon optical interconnect device technologies for 40Gb/s and beyond,” IEEE J. Sel. Top. Quantum Electron. 19(2), 8200312 (2013).
[CrossRef]

A. Novack, Y. Liu, R. Ding, M. Gould, T. Baehr-Jones, Q. Li, Y. Yang, Y. Ma, Y. Zhang, K. Padmaraju, K. Bergmen, A. E.-J. Lim, G.-Q. Lo, and M. Hochberg, “A 30 GHz silicon photonic platform,” Proc. SPIE 8781, 878107 (2013).
[CrossRef]

2012 (7)

D. J. Thomson, F. Y. Gardes, J.-M. Fedeli, S. Zlatanovic, Y. Hu, B. P.-P. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett. 24(4), 234–236 (2012).
[CrossRef]

L. Vivien, A. Polzer, D. Marris-Morini, J. Osmond, J. M. Hartmann, P. Crozat, E. Cassan, C. Kopp, H. Zimmermann, and J. M. Fédéli, “Zero-bias 40Gbit/s germanium waveguide photodetector on silicon,” Opt. Express 20(2), 1096–1101 (2012).
[CrossRef] [PubMed]

R. E. Camacho-Aguilera, Y. Cai, N. Patel, J. T. Bessette, M. Romagnoli, L. C. Kimerling, and J. Michel, “An electrically pumped germanium laser,” Opt. Express 20(10), 11316–11320 (2012).
[CrossRef] [PubMed]

X. Wang, W. Shi, H. Yun, S. Grist, N. A. F. Jaeger, and L. Chrostowski, “Narrow-band waveguide Bragg gratings on SOI wafers with CMOS-compatible fabrication process,” Opt. Express 20(14), 15547–15558 (2012).
[CrossRef] [PubMed]

A. J. Zilkie, P. Seddighian, B. J. Bijlani, W. Qian, D. C. Lee, S. Fathololoumi, J. Fong, R. Shafiiha, D. Feng, B. J. Luff, X. Zheng, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “Power-efficient III-V/silicon external cavity DBR lasers,” Opt. Express 20(21), 23456–23462 (2012).
[CrossRef] [PubMed]

K. Padmaraju, J. Chan, L. Chen, M. Lipson, and K. Bergman, “Thermal stabilization of a microring modulator using feedback control,” Opt. Express 20(27), 27999–28008 (2012).
[CrossRef] [PubMed]

S. Tanaka, S.-H. Jeong, S. Sekiguchi, T. Kurahashi, Y. Tanaka, and K. Morito, “High-output-power, single-wavelength silicon hybrid laser using precise flip-chip bonding technology,” Opt. Express 20(27), 28057–28069 (2012).
[CrossRef] [PubMed]

2011 (3)

A. Mekis, S. Gloeckner, G. Masini, A. Narasimha, T. Pinguet, S. Sahni, and P. De Dobbelaere, “A grating-coupler-enabled CMOS photonics platform,” IEEE J. Sel. Top. Quantum Electron. 17(3), 597–608 (2011).
[CrossRef]

A. V. Krishnamoorthy, X. Zheng, G. Li, J. Yao, T. Pinguet, A. Mekis, H. Thacker, I. Shubin, Y. Luo, K. Raj, and J. E. Cunningham, “Exploiting CMOS manufacturing to reduce tuning requirements for resonant optical devices,” IEEE Photon. J. 3(3), 567–579 (2011).
[CrossRef]

T. Wang, H. Liu, A. Lee, F. Pozzi, and A. Seeds, “1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates,” Opt. Express 19(12), 11381–11386 (2011).
[CrossRef] [PubMed]

2010 (4)

W. Bogaerts, S. K. Selvaraja, P. Dumon, J. Brouckaert, K. De Vos, D. Van Thourhout, and R. Baets, “Silicon-on-insulator spectral filters fabricated with CMOS technology,” IEEE J. Sel. Top. Quantum Electron. 16(1), 33–44 (2010).
[CrossRef]

S. K. Selvaraja, W. Bogaerts, P. Dumon, D. Van Thourhout, and R. Baets, “Subnanometer linewidth uniformity in silicon nanophotonic waveguide devices using CMOS fabrication technology,” IEEE J. Sel. Top. Quantum Electron. 16(1), 316–324 (2010).
[CrossRef]

P. Dong, W. Qian, H. Liang, R. Shafiiha, D. Feng, G. Li, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “Thermally tunable silicon racetrack resonators with ultralow tuning power,” Opt. Express 18(19), 20298–20304 (2010).
[CrossRef] [PubMed]

M. R. Watts, “Adiabatic microring resonators,” Opt. Lett. 35(19), 3231–3233 (2010).
[CrossRef] [PubMed]

2009 (1)

2007 (1)

2001 (1)

B. Liu, A. Shakouri, and J. E. Bowers, “Passive microring-resonator-coupled lasers,” Appl. Phys. Lett. 79(22), 3561–3563 (2001).
[CrossRef]

Alic, N.

D. J. Thomson, F. Y. Gardes, J.-M. Fedeli, S. Zlatanovic, Y. Hu, B. P.-P. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett. 24(4), 234–236 (2012).
[CrossRef]

Aroca, R.

P. Dong, X. Liu, S. Chandrasekhar, L. L. Buhl, R. Aroca, and Y.-K. Chen, “Monolithic silicon photonic integrated circuits for compact 100+ Gb/s coherent optical receivers and transmitters,” IEEE J. Sel. Top. Quantum Electron. 20(4), 6100108 (2014).
[CrossRef]

Asghari, M.

Baehr-Jones, T.

Baets, R.

W. Bogaerts, S. K. Selvaraja, P. Dumon, J. Brouckaert, K. De Vos, D. Van Thourhout, and R. Baets, “Silicon-on-insulator spectral filters fabricated with CMOS technology,” IEEE J. Sel. Top. Quantum Electron. 16(1), 33–44 (2010).
[CrossRef]

S. K. Selvaraja, W. Bogaerts, P. Dumon, D. Van Thourhout, and R. Baets, “Subnanometer linewidth uniformity in silicon nanophotonic waveguide devices using CMOS fabrication technology,” IEEE J. Sel. Top. Quantum Electron. 16(1), 316–324 (2010).
[CrossRef]

S. K. Selvaraja, P. Jaenen, W. Bogaerts, D. Van Thourhout, P. Dumon, and R. Baets, “Fabrication of photonic wire and crystal circuits in silicon-on-insulator using 193-nm optical lithography,” J. Lightwave Technol. 27(18), 4076–4083 (2009).
[CrossRef]

Bergman, K.

Bergmen, K.

A. Novack, Y. Liu, R. Ding, M. Gould, T. Baehr-Jones, Q. Li, Y. Yang, Y. Ma, Y. Zhang, K. Padmaraju, K. Bergmen, A. E.-J. Lim, G.-Q. Lo, and M. Hochberg, “A 30 GHz silicon photonic platform,” Proc. SPIE 8781, 878107 (2013).
[CrossRef]

Bessette, J. T.

Bickford, J.

Bijlani, B. J.

Blivin, C. C.

Bogaerts, W.

S. K. Selvaraja, W. Bogaerts, P. Dumon, D. Van Thourhout, and R. Baets, “Subnanometer linewidth uniformity in silicon nanophotonic waveguide devices using CMOS fabrication technology,” IEEE J. Sel. Top. Quantum Electron. 16(1), 316–324 (2010).
[CrossRef]

W. Bogaerts, S. K. Selvaraja, P. Dumon, J. Brouckaert, K. De Vos, D. Van Thourhout, and R. Baets, “Silicon-on-insulator spectral filters fabricated with CMOS technology,” IEEE J. Sel. Top. Quantum Electron. 16(1), 33–44 (2010).
[CrossRef]

S. K. Selvaraja, P. Jaenen, W. Bogaerts, D. Van Thourhout, P. Dumon, and R. Baets, “Fabrication of photonic wire and crystal circuits in silicon-on-insulator using 193-nm optical lithography,” J. Lightwave Technol. 27(18), 4076–4083 (2009).
[CrossRef]

Bordel, D.

Bowers, J. E.

Brouckaert, J.

W. Bogaerts, S. K. Selvaraja, P. Dumon, J. Brouckaert, K. De Vos, D. Van Thourhout, and R. Baets, “Silicon-on-insulator spectral filters fabricated with CMOS technology,” IEEE J. Sel. Top. Quantum Electron. 16(1), 33–44 (2010).
[CrossRef]

Buhl, L. L.

P. Dong, X. Liu, S. Chandrasekhar, L. L. Buhl, R. Aroca, and Y.-K. Chen, “Monolithic silicon photonic integrated circuits for compact 100+ Gb/s coherent optical receivers and transmitters,” IEEE J. Sel. Top. Quantum Electron. 20(4), 6100108 (2014).
[CrossRef]

Cai, H.

Cai, Y.

Camacho-Aguilera, R. E.

Cassan, E.

Chan, J.

Chandrasekhar, S.

P. Dong, X. Liu, S. Chandrasekhar, L. L. Buhl, R. Aroca, and Y.-K. Chen, “Monolithic silicon photonic integrated circuits for compact 100+ Gb/s coherent optical receivers and transmitters,” IEEE J. Sel. Top. Quantum Electron. 20(4), 6100108 (2014).
[CrossRef]

Chen, L.

Chen, Y.-K.

P. Dong, X. Liu, S. Chandrasekhar, L. L. Buhl, R. Aroca, and Y.-K. Chen, “Monolithic silicon photonic integrated circuits for compact 100+ Gb/s coherent optical receivers and transmitters,” IEEE J. Sel. Top. Quantum Electron. 20(4), 6100108 (2014).
[CrossRef]

Chrostowski, L.

Cohen, O.

Creazzo, T.

Crozat, P.

Cunningham, J. E.

Dallesasse, J. M.

De Dobbelaere, P.

A. Mekis, S. Gloeckner, G. Masini, A. Narasimha, T. Pinguet, S. Sahni, and P. De Dobbelaere, “A grating-coupler-enabled CMOS photonics platform,” IEEE J. Sel. Top. Quantum Electron. 17(3), 597–608 (2011).
[CrossRef]

De Vos, K.

W. Bogaerts, S. K. Selvaraja, P. Dumon, J. Brouckaert, K. De Vos, D. Van Thourhout, and R. Baets, “Silicon-on-insulator spectral filters fabricated with CMOS technology,” IEEE J. Sel. Top. Quantum Electron. 16(1), 33–44 (2010).
[CrossRef]

Ding, R.

A. Novack, Y. Liu, R. Ding, M. Gould, T. Baehr-Jones, Q. Li, Y. Yang, Y. Ma, Y. Zhang, K. Padmaraju, K. Bergmen, A. E.-J. Lim, G.-Q. Lo, and M. Hochberg, “A 30 GHz silicon photonic platform,” Proc. SPIE 8781, 878107 (2013).
[CrossRef]

Djordjevic, S. S.

Dong, P.

P. Dong, X. Liu, S. Chandrasekhar, L. L. Buhl, R. Aroca, and Y.-K. Chen, “Monolithic silicon photonic integrated circuits for compact 100+ Gb/s coherent optical receivers and transmitters,” IEEE J. Sel. Top. Quantum Electron. 20(4), 6100108 (2014).
[CrossRef]

P. Dong, W. Qian, H. Liang, R. Shafiiha, D. Feng, G. Li, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “Thermally tunable silicon racetrack resonators with ultralow tuning power,” Opt. Express 18(19), 20298–20304 (2010).
[CrossRef] [PubMed]

Duan, G.-H.

Duan, N.

T.-Y. Liow, J.-F. Song, X. Tu, A. E.-J. Lim, Q. Fang, N. Duan, M. Yu, and G.-Q. Luo, “Silicon optical interconnect device technologies for 40Gb/s and beyond,” IEEE J. Sel. Top. Quantum Electron. 19(2), 8200312 (2013).
[CrossRef]

Dumon, P.

W. Bogaerts, S. K. Selvaraja, P. Dumon, J. Brouckaert, K. De Vos, D. Van Thourhout, and R. Baets, “Silicon-on-insulator spectral filters fabricated with CMOS technology,” IEEE J. Sel. Top. Quantum Electron. 16(1), 33–44 (2010).
[CrossRef]

S. K. Selvaraja, W. Bogaerts, P. Dumon, D. Van Thourhout, and R. Baets, “Subnanometer linewidth uniformity in silicon nanophotonic waveguide devices using CMOS fabrication technology,” IEEE J. Sel. Top. Quantum Electron. 16(1), 316–324 (2010).
[CrossRef]

S. K. Selvaraja, P. Jaenen, W. Bogaerts, D. Van Thourhout, P. Dumon, and R. Baets, “Fabrication of photonic wire and crystal circuits in silicon-on-insulator using 193-nm optical lithography,” J. Lightwave Technol. 27(18), 4076–4083 (2009).
[CrossRef]

Ejzak, G. A.

Fang, A. W.

Fang, Q.

T.-Y. Liow, J.-F. Song, X. Tu, A. E.-J. Lim, Q. Fang, N. Duan, M. Yu, and G.-Q. Luo, “Silicon optical interconnect device technologies for 40Gb/s and beyond,” IEEE J. Sel. Top. Quantum Electron. 19(2), 8200312 (2013).
[CrossRef]

Fathololoumi, S.

Fedeli, J.-M.

S. Keyvaninia, G. Roelkens, D. Van Thourhout, C. Jany, M. Lamponi, A. Le Liepvre, F. Lelarge, D. Make, G.-H. Duan, D. Bordel, and J.-M. Fedeli, “Demonstration of a heterogeneously integrated III-V/SOI single wavelength tunable laser,” Opt. Express 21(3), 3784–3792 (2013).
[CrossRef] [PubMed]

D. J. Thomson, F. Y. Gardes, J.-M. Fedeli, S. Zlatanovic, Y. Hu, B. P.-P. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett. 24(4), 234–236 (2012).
[CrossRef]

Fédéli, J. M.

Feng, D.

Fong, J.

Galland, C.

Gardes, F. Y.

D. J. Thomson, F. Y. Gardes, J.-M. Fedeli, S. Zlatanovic, Y. Hu, B. P.-P. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett. 24(4), 234–236 (2012).
[CrossRef]

Gloeckner, S.

A. Mekis, S. Gloeckner, G. Masini, A. Narasimha, T. Pinguet, S. Sahni, and P. De Dobbelaere, “A grating-coupler-enabled CMOS photonics platform,” IEEE J. Sel. Top. Quantum Electron. 17(3), 597–608 (2011).
[CrossRef]

Gould, M.

Y. Zhang, S. Yang, Y. Yang, M. Gould, N. Ophir, A. E.-J. Lim, G.-Q. Lo, P. Magill, K. Bergman, T. Baehr-Jones, and M. Hochberg, “A high-responsivity photodetector absent metal-germanium direct contact,” Opt. Express 22(9), 11367–11375 (2014).
[CrossRef] [PubMed]

A. Novack, Y. Liu, R. Ding, M. Gould, T. Baehr-Jones, Q. Li, Y. Yang, Y. Ma, Y. Zhang, K. Padmaraju, K. Bergmen, A. E.-J. Lim, G.-Q. Lo, and M. Hochberg, “A 30 GHz silicon photonic platform,” Proc. SPIE 8781, 878107 (2013).
[CrossRef]

Grist, S.

Grund, D. W.

Hartmann, J. M.

He, L.

Hochberg, M.

Horikawa, T.

Hu, Y.

D. J. Thomson, F. Y. Gardes, J.-M. Fedeli, S. Zlatanovic, Y. Hu, B. P.-P. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett. 24(4), 234–236 (2012).
[CrossRef]

Jaeger, N. A. F.

Jaenen, P.

Jany, C.

Jeong, S.-H.

Jones, R.

Keyvaninia, S.

Kimerling, L. C.

Kopp, C.

Koshino, K.

Krasulick, S. B.

Krishnamoorthy, A. V.

Kuo, B. P.-P.

D. J. Thomson, F. Y. Gardes, J.-M. Fedeli, S. Zlatanovic, Y. Hu, B. P.-P. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett. 24(4), 234–236 (2012).
[CrossRef]

Kurahashi, T.

Lamponi, M.

Le Liepvre, A.

Lee, A.

Lee, D. C.

Lee, J. H.

Lelarge, F.

Li, G.

A. V. Krishnamoorthy, X. Zheng, G. Li, J. Yao, T. Pinguet, A. Mekis, H. Thacker, I. Shubin, Y. Luo, K. Raj, and J. E. Cunningham, “Exploiting CMOS manufacturing to reduce tuning requirements for resonant optical devices,” IEEE Photon. J. 3(3), 567–579 (2011).
[CrossRef]

P. Dong, W. Qian, H. Liang, R. Shafiiha, D. Feng, G. Li, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “Thermally tunable silicon racetrack resonators with ultralow tuning power,” Opt. Express 18(19), 20298–20304 (2010).
[CrossRef] [PubMed]

Li, Q.

A. Novack, Y. Liu, R. Ding, M. Gould, T. Baehr-Jones, Q. Li, Y. Yang, Y. Ma, Y. Zhang, K. Padmaraju, K. Bergmen, A. E.-J. Lim, G.-Q. Lo, and M. Hochberg, “A 30 GHz silicon photonic platform,” Proc. SPIE 8781, 878107 (2013).
[CrossRef]

Liang, H.

Lim, A. E.-J.

S. Yang, Y. Zhang, D. W. Grund, G. A. Ejzak, Y. Liu, A. Novack, D. Prather, A. E.-J. Lim, G.-Q. Lo, T. Baehr-Jones, and M. Hochberg, “A single adiabatic microring-based laser in 220 nm silicon-on-insulator,” Opt. Express 22(1), 1172–1180 (2014).
[CrossRef] [PubMed]

Y. Zhang, S. Yang, Y. Yang, M. Gould, N. Ophir, A. E.-J. Lim, G.-Q. Lo, P. Magill, K. Bergman, T. Baehr-Jones, and M. Hochberg, “A high-responsivity photodetector absent metal-germanium direct contact,” Opt. Express 22(9), 11367–11375 (2014).
[CrossRef] [PubMed]

Y. Zhang, M. Streshinsky, A. Novack, Y. Ma, S. Yang, A. E.-J. Lim, G.-Q. Lo, T. Baehr-Jones, and M. Hochberg, “A compact and low-loss silicon waveguide crossing for O-band optical interconnect,” Proc. SPIE 8990, 899002 (2014).
[CrossRef]

T.-Y. Liow, J.-F. Song, X. Tu, A. E.-J. Lim, Q. Fang, N. Duan, M. Yu, and G.-Q. Luo, “Silicon optical interconnect device technologies for 40Gb/s and beyond,” IEEE J. Sel. Top. Quantum Electron. 19(2), 8200312 (2013).
[CrossRef]

A. Novack, Y. Liu, R. Ding, M. Gould, T. Baehr-Jones, Q. Li, Y. Yang, Y. Ma, Y. Zhang, K. Padmaraju, K. Bergmen, A. E.-J. Lim, G.-Q. Lo, and M. Hochberg, “A 30 GHz silicon photonic platform,” Proc. SPIE 8781, 878107 (2013).
[CrossRef]

Y. Zhang, S. Yang, A. E.-J. Lim, G.-Q. Lo, C. Galland, T. Baehr-Jones, and M. Hochberg, “A compact and low loss Y-junction for submicron silicon waveguide,” Opt. Express 21(1), 1310–1316 (2013).
[CrossRef] [PubMed]

Lin, S.

Liow, T.-Y.

T.-Y. Liow, J.-F. Song, X. Tu, A. E.-J. Lim, Q. Fang, N. Duan, M. Yu, and G.-Q. Luo, “Silicon optical interconnect device technologies for 40Gb/s and beyond,” IEEE J. Sel. Top. Quantum Electron. 19(2), 8200312 (2013).
[CrossRef]

Lipson, M.

Liu, B.

B. Liu, A. Shakouri, and J. E. Bowers, “Passive microring-resonator-coupled lasers,” Appl. Phys. Lett. 79(22), 3561–3563 (2001).
[CrossRef]

Liu, H.

Liu, X.

P. Dong, X. Liu, S. Chandrasekhar, L. L. Buhl, R. Aroca, and Y.-K. Chen, “Monolithic silicon photonic integrated circuits for compact 100+ Gb/s coherent optical receivers and transmitters,” IEEE J. Sel. Top. Quantum Electron. 20(4), 6100108 (2014).
[CrossRef]

Liu, Y.

S. Yang, Y. Zhang, D. W. Grund, G. A. Ejzak, Y. Liu, A. Novack, D. Prather, A. E.-J. Lim, G.-Q. Lo, T. Baehr-Jones, and M. Hochberg, “A single adiabatic microring-based laser in 220 nm silicon-on-insulator,” Opt. Express 22(1), 1172–1180 (2014).
[CrossRef] [PubMed]

A. Novack, Y. Liu, R. Ding, M. Gould, T. Baehr-Jones, Q. Li, Y. Yang, Y. Ma, Y. Zhang, K. Padmaraju, K. Bergmen, A. E.-J. Lim, G.-Q. Lo, and M. Hochberg, “A 30 GHz silicon photonic platform,” Proc. SPIE 8781, 878107 (2013).
[CrossRef]

Lo, G.-Q.

Luff, B. J.

Luo, G.-Q.

T.-Y. Liow, J.-F. Song, X. Tu, A. E.-J. Lim, Q. Fang, N. Duan, M. Yu, and G.-Q. Luo, “Silicon optical interconnect device technologies for 40Gb/s and beyond,” IEEE J. Sel. Top. Quantum Electron. 19(2), 8200312 (2013).
[CrossRef]

Luo, Y.

J. H. Lee, I. Shubin, J. Yao, J. Bickford, Y. Luo, S. Lin, S. S. Djordjevic, H. D. Thacker, J. E. Cunningham, K. Raj, X. Zheng, and A. V. Krishnamoorthy, “High power and widely tunable Si hybrid external-cavity laser for power efficient Si photonics WDM links,” Opt. Express 22(7), 7678–7685 (2014).
[CrossRef] [PubMed]

A. V. Krishnamoorthy, X. Zheng, G. Li, J. Yao, T. Pinguet, A. Mekis, H. Thacker, I. Shubin, Y. Luo, K. Raj, and J. E. Cunningham, “Exploiting CMOS manufacturing to reduce tuning requirements for resonant optical devices,” IEEE Photon. J. 3(3), 567–579 (2011).
[CrossRef]

Ma, Y.

Y. Zhang, M. Streshinsky, A. Novack, Y. Ma, S. Yang, A. E.-J. Lim, G.-Q. Lo, T. Baehr-Jones, and M. Hochberg, “A compact and low-loss silicon waveguide crossing for O-band optical interconnect,” Proc. SPIE 8990, 899002 (2014).
[CrossRef]

A. Novack, Y. Liu, R. Ding, M. Gould, T. Baehr-Jones, Q. Li, Y. Yang, Y. Ma, Y. Zhang, K. Padmaraju, K. Bergmen, A. E.-J. Lim, G.-Q. Lo, and M. Hochberg, “A 30 GHz silicon photonic platform,” Proc. SPIE 8781, 878107 (2013).
[CrossRef]

Magill, P.

Make, D.

Marchena, E.

Marris-Morini, D.

Mashanovich, G. Z.

D. J. Thomson, F. Y. Gardes, J.-M. Fedeli, S. Zlatanovic, Y. Hu, B. P.-P. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett. 24(4), 234–236 (2012).
[CrossRef]

Masini, G.

A. Mekis, S. Gloeckner, G. Masini, A. Narasimha, T. Pinguet, S. Sahni, and P. De Dobbelaere, “A grating-coupler-enabled CMOS photonics platform,” IEEE J. Sel. Top. Quantum Electron. 17(3), 597–608 (2011).
[CrossRef]

Mekis, A.

A. Mekis, S. Gloeckner, G. Masini, A. Narasimha, T. Pinguet, S. Sahni, and P. De Dobbelaere, “A grating-coupler-enabled CMOS photonics platform,” IEEE J. Sel. Top. Quantum Electron. 17(3), 597–608 (2011).
[CrossRef]

A. V. Krishnamoorthy, X. Zheng, G. Li, J. Yao, T. Pinguet, A. Mekis, H. Thacker, I. Shubin, Y. Luo, K. Raj, and J. E. Cunningham, “Exploiting CMOS manufacturing to reduce tuning requirements for resonant optical devices,” IEEE Photon. J. 3(3), 567–579 (2011).
[CrossRef]

Michel, J.

Mikkelsen, J. C.

Mizrahi, A.

Morito, K.

Myslivets, E.

D. J. Thomson, F. Y. Gardes, J.-M. Fedeli, S. Zlatanovic, Y. Hu, B. P.-P. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett. 24(4), 234–236 (2012).
[CrossRef]

Narasimha, A.

A. Mekis, S. Gloeckner, G. Masini, A. Narasimha, T. Pinguet, S. Sahni, and P. De Dobbelaere, “A grating-coupler-enabled CMOS photonics platform,” IEEE J. Sel. Top. Quantum Electron. 17(3), 597–608 (2011).
[CrossRef]

Novack, A.

Y. Zhang, M. Streshinsky, A. Novack, Y. Ma, S. Yang, A. E.-J. Lim, G.-Q. Lo, T. Baehr-Jones, and M. Hochberg, “A compact and low-loss silicon waveguide crossing for O-band optical interconnect,” Proc. SPIE 8990, 899002 (2014).
[CrossRef]

S. Yang, Y. Zhang, D. W. Grund, G. A. Ejzak, Y. Liu, A. Novack, D. Prather, A. E.-J. Lim, G.-Q. Lo, T. Baehr-Jones, and M. Hochberg, “A single adiabatic microring-based laser in 220 nm silicon-on-insulator,” Opt. Express 22(1), 1172–1180 (2014).
[CrossRef] [PubMed]

A. Novack, Y. Liu, R. Ding, M. Gould, T. Baehr-Jones, Q. Li, Y. Yang, Y. Ma, Y. Zhang, K. Padmaraju, K. Bergmen, A. E.-J. Lim, G.-Q. Lo, and M. Hochberg, “A 30 GHz silicon photonic platform,” Proc. SPIE 8781, 878107 (2013).
[CrossRef]

Ohtsuka, M.

Ophir, N.

Osmond, J.

Padmaraju, K.

A. Novack, Y. Liu, R. Ding, M. Gould, T. Baehr-Jones, Q. Li, Y. Yang, Y. Ma, Y. Zhang, K. Padmaraju, K. Bergmen, A. E.-J. Lim, G.-Q. Lo, and M. Hochberg, “A 30 GHz silicon photonic platform,” Proc. SPIE 8781, 878107 (2013).
[CrossRef]

K. Padmaraju, J. Chan, L. Chen, M. Lipson, and K. Bergman, “Thermal stabilization of a microring modulator using feedback control,” Opt. Express 20(27), 27999–28008 (2012).
[CrossRef] [PubMed]

Paniccia, M. J.

Park, H.

Patel, N.

Pinguet, T.

A. V. Krishnamoorthy, X. Zheng, G. Li, J. Yao, T. Pinguet, A. Mekis, H. Thacker, I. Shubin, Y. Luo, K. Raj, and J. E. Cunningham, “Exploiting CMOS manufacturing to reduce tuning requirements for resonant optical devices,” IEEE Photon. J. 3(3), 567–579 (2011).
[CrossRef]

A. Mekis, S. Gloeckner, G. Masini, A. Narasimha, T. Pinguet, S. Sahni, and P. De Dobbelaere, “A grating-coupler-enabled CMOS photonics platform,” IEEE J. Sel. Top. Quantum Electron. 17(3), 597–608 (2011).
[CrossRef]

Polzer, A.

Poon, J. K.-S.

Pozzi, F.

Prather, D.

Qian, W.

Raday, O.

Radic, S.

D. J. Thomson, F. Y. Gardes, J.-M. Fedeli, S. Zlatanovic, Y. Hu, B. P.-P. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett. 24(4), 234–236 (2012).
[CrossRef]

Raj, K.

J. H. Lee, I. Shubin, J. Yao, J. Bickford, Y. Luo, S. Lin, S. S. Djordjevic, H. D. Thacker, J. E. Cunningham, K. Raj, X. Zheng, and A. V. Krishnamoorthy, “High power and widely tunable Si hybrid external-cavity laser for power efficient Si photonics WDM links,” Opt. Express 22(7), 7678–7685 (2014).
[CrossRef] [PubMed]

A. V. Krishnamoorthy, X. Zheng, G. Li, J. Yao, T. Pinguet, A. Mekis, H. Thacker, I. Shubin, Y. Luo, K. Raj, and J. E. Cunningham, “Exploiting CMOS manufacturing to reduce tuning requirements for resonant optical devices,” IEEE Photon. J. 3(3), 567–579 (2011).
[CrossRef]

Reed, G. T.

D. J. Thomson, F. Y. Gardes, J.-M. Fedeli, S. Zlatanovic, Y. Hu, B. P.-P. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett. 24(4), 234–236 (2012).
[CrossRef]

Roelkens, G.

Romagnoli, M.

Sacher, W. D.

Sahni, S.

A. Mekis, S. Gloeckner, G. Masini, A. Narasimha, T. Pinguet, S. Sahni, and P. De Dobbelaere, “A grating-coupler-enabled CMOS photonics platform,” IEEE J. Sel. Top. Quantum Electron. 17(3), 597–608 (2011).
[CrossRef]

Seddighian, P.

Seeds, A.

Seki, M.

Sekiguchi, S.

Selvaraja, S. K.

W. Bogaerts, S. K. Selvaraja, P. Dumon, J. Brouckaert, K. De Vos, D. Van Thourhout, and R. Baets, “Silicon-on-insulator spectral filters fabricated with CMOS technology,” IEEE J. Sel. Top. Quantum Electron. 16(1), 33–44 (2010).
[CrossRef]

S. K. Selvaraja, W. Bogaerts, P. Dumon, D. Van Thourhout, and R. Baets, “Subnanometer linewidth uniformity in silicon nanophotonic waveguide devices using CMOS fabrication technology,” IEEE J. Sel. Top. Quantum Electron. 16(1), 316–324 (2010).
[CrossRef]

S. K. Selvaraja, P. Jaenen, W. Bogaerts, D. Van Thourhout, P. Dumon, and R. Baets, “Fabrication of photonic wire and crystal circuits in silicon-on-insulator using 193-nm optical lithography,” J. Lightwave Technol. 27(18), 4076–4083 (2009).
[CrossRef]

Shafiiha, R.

Shakouri, A.

B. Liu, A. Shakouri, and J. E. Bowers, “Passive microring-resonator-coupled lasers,” Appl. Phys. Lett. 79(22), 3561–3563 (2001).
[CrossRef]

Shi, W.

Shimura, D.

Shubin, I.

J. H. Lee, I. Shubin, J. Yao, J. Bickford, Y. Luo, S. Lin, S. S. Djordjevic, H. D. Thacker, J. E. Cunningham, K. Raj, X. Zheng, and A. V. Krishnamoorthy, “High power and widely tunable Si hybrid external-cavity laser for power efficient Si photonics WDM links,” Opt. Express 22(7), 7678–7685 (2014).
[CrossRef] [PubMed]

A. V. Krishnamoorthy, X. Zheng, G. Li, J. Yao, T. Pinguet, A. Mekis, H. Thacker, I. Shubin, Y. Luo, K. Raj, and J. E. Cunningham, “Exploiting CMOS manufacturing to reduce tuning requirements for resonant optical devices,” IEEE Photon. J. 3(3), 567–579 (2011).
[CrossRef]

Simoyama, T.

Song, J.-F.

T.-Y. Liow, J.-F. Song, X. Tu, A. E.-J. Lim, Q. Fang, N. Duan, M. Yu, and G.-Q. Luo, “Silicon optical interconnect device technologies for 40Gb/s and beyond,” IEEE J. Sel. Top. Quantum Electron. 19(2), 8200312 (2013).
[CrossRef]

Spann, J. Y.

Stone, R. J.

Streshinsky, M.

Y. Zhang, M. Streshinsky, A. Novack, Y. Ma, S. Yang, A. E.-J. Lim, G.-Q. Lo, T. Baehr-Jones, and M. Hochberg, “A compact and low-loss silicon waveguide crossing for O-band optical interconnect,” Proc. SPIE 8990, 899002 (2014).
[CrossRef]

Tanaka, S.

Tanaka, Y.

Thacker, H.

A. V. Krishnamoorthy, X. Zheng, G. Li, J. Yao, T. Pinguet, A. Mekis, H. Thacker, I. Shubin, Y. Luo, K. Raj, and J. E. Cunningham, “Exploiting CMOS manufacturing to reduce tuning requirements for resonant optical devices,” IEEE Photon. J. 3(3), 567–579 (2011).
[CrossRef]

Thacker, H. D.

Thomson, D. J.

D. J. Thomson, F. Y. Gardes, J.-M. Fedeli, S. Zlatanovic, Y. Hu, B. P.-P. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett. 24(4), 234–236 (2012).
[CrossRef]

Tu, X.

T.-Y. Liow, J.-F. Song, X. Tu, A. E.-J. Lim, Q. Fang, N. Duan, M. Yu, and G.-Q. Luo, “Silicon optical interconnect device technologies for 40Gb/s and beyond,” IEEE J. Sel. Top. Quantum Electron. 19(2), 8200312 (2013).
[CrossRef]

Van Orden, D.

Van Thourhout, D.

S. Keyvaninia, G. Roelkens, D. Van Thourhout, C. Jany, M. Lamponi, A. Le Liepvre, F. Lelarge, D. Make, G.-H. Duan, D. Bordel, and J.-M. Fedeli, “Demonstration of a heterogeneously integrated III-V/SOI single wavelength tunable laser,” Opt. Express 21(3), 3784–3792 (2013).
[CrossRef] [PubMed]

S. K. Selvaraja, W. Bogaerts, P. Dumon, D. Van Thourhout, and R. Baets, “Subnanometer linewidth uniformity in silicon nanophotonic waveguide devices using CMOS fabrication technology,” IEEE J. Sel. Top. Quantum Electron. 16(1), 316–324 (2010).
[CrossRef]

W. Bogaerts, S. K. Selvaraja, P. Dumon, J. Brouckaert, K. De Vos, D. Van Thourhout, and R. Baets, “Silicon-on-insulator spectral filters fabricated with CMOS technology,” IEEE J. Sel. Top. Quantum Electron. 16(1), 33–44 (2010).
[CrossRef]

S. K. Selvaraja, P. Jaenen, W. Bogaerts, D. Van Thourhout, P. Dumon, and R. Baets, “Fabrication of photonic wire and crystal circuits in silicon-on-insulator using 193-nm optical lithography,” J. Lightwave Technol. 27(18), 4076–4083 (2009).
[CrossRef]

Vivien, L.

Wang, T.

Wang, X.

Watts, M. R.

Yang, S.

Yang, Y.

Y. Zhang, S. Yang, Y. Yang, M. Gould, N. Ophir, A. E.-J. Lim, G.-Q. Lo, P. Magill, K. Bergman, T. Baehr-Jones, and M. Hochberg, “A high-responsivity photodetector absent metal-germanium direct contact,” Opt. Express 22(9), 11367–11375 (2014).
[CrossRef] [PubMed]

A. Novack, Y. Liu, R. Ding, M. Gould, T. Baehr-Jones, Q. Li, Y. Yang, Y. Ma, Y. Zhang, K. Padmaraju, K. Bergmen, A. E.-J. Lim, G.-Q. Lo, and M. Hochberg, “A 30 GHz silicon photonic platform,” Proc. SPIE 8781, 878107 (2013).
[CrossRef]

Yao, J.

J. H. Lee, I. Shubin, J. Yao, J. Bickford, Y. Luo, S. Lin, S. S. Djordjevic, H. D. Thacker, J. E. Cunningham, K. Raj, X. Zheng, and A. V. Krishnamoorthy, “High power and widely tunable Si hybrid external-cavity laser for power efficient Si photonics WDM links,” Opt. Express 22(7), 7678–7685 (2014).
[CrossRef] [PubMed]

A. V. Krishnamoorthy, X. Zheng, G. Li, J. Yao, T. Pinguet, A. Mekis, H. Thacker, I. Shubin, Y. Luo, K. Raj, and J. E. Cunningham, “Exploiting CMOS manufacturing to reduce tuning requirements for resonant optical devices,” IEEE Photon. J. 3(3), 567–579 (2011).
[CrossRef]

Yokoyama, N.

Yu, M.

T.-Y. Liow, J.-F. Song, X. Tu, A. E.-J. Lim, Q. Fang, N. Duan, M. Yu, and G.-Q. Luo, “Silicon optical interconnect device technologies for 40Gb/s and beyond,” IEEE J. Sel. Top. Quantum Electron. 19(2), 8200312 (2013).
[CrossRef]

Yu, P. K.

Yun, H.

Zhang, Y.

Zheng, X.

Zilkie, A. J.

Zimmermann, H.

Zlatanovic, S.

D. J. Thomson, F. Y. Gardes, J.-M. Fedeli, S. Zlatanovic, Y. Hu, B. P.-P. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett. 24(4), 234–236 (2012).
[CrossRef]

Appl. Phys. Lett. (1)

B. Liu, A. Shakouri, and J. E. Bowers, “Passive microring-resonator-coupled lasers,” Appl. Phys. Lett. 79(22), 3561–3563 (2001).
[CrossRef]

IEEE J. Sel. Top. Quantum Electron. (5)

W. Bogaerts, S. K. Selvaraja, P. Dumon, J. Brouckaert, K. De Vos, D. Van Thourhout, and R. Baets, “Silicon-on-insulator spectral filters fabricated with CMOS technology,” IEEE J. Sel. Top. Quantum Electron. 16(1), 33–44 (2010).
[CrossRef]

P. Dong, X. Liu, S. Chandrasekhar, L. L. Buhl, R. Aroca, and Y.-K. Chen, “Monolithic silicon photonic integrated circuits for compact 100+ Gb/s coherent optical receivers and transmitters,” IEEE J. Sel. Top. Quantum Electron. 20(4), 6100108 (2014).
[CrossRef]

T.-Y. Liow, J.-F. Song, X. Tu, A. E.-J. Lim, Q. Fang, N. Duan, M. Yu, and G.-Q. Luo, “Silicon optical interconnect device technologies for 40Gb/s and beyond,” IEEE J. Sel. Top. Quantum Electron. 19(2), 8200312 (2013).
[CrossRef]

S. K. Selvaraja, W. Bogaerts, P. Dumon, D. Van Thourhout, and R. Baets, “Subnanometer linewidth uniformity in silicon nanophotonic waveguide devices using CMOS fabrication technology,” IEEE J. Sel. Top. Quantum Electron. 16(1), 316–324 (2010).
[CrossRef]

A. Mekis, S. Gloeckner, G. Masini, A. Narasimha, T. Pinguet, S. Sahni, and P. De Dobbelaere, “A grating-coupler-enabled CMOS photonics platform,” IEEE J. Sel. Top. Quantum Electron. 17(3), 597–608 (2011).
[CrossRef]

IEEE Photon. J. (1)

A. V. Krishnamoorthy, X. Zheng, G. Li, J. Yao, T. Pinguet, A. Mekis, H. Thacker, I. Shubin, Y. Luo, K. Raj, and J. E. Cunningham, “Exploiting CMOS manufacturing to reduce tuning requirements for resonant optical devices,” IEEE Photon. J. 3(3), 567–579 (2011).
[CrossRef]

IEEE Photon. Technol. Lett. (1)

D. J. Thomson, F. Y. Gardes, J.-M. Fedeli, S. Zlatanovic, Y. Hu, B. P.-P. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett. 24(4), 234–236 (2012).
[CrossRef]

J. Lightwave Technol. (1)

Opt. Express (17)

P. Dong, W. Qian, H. Liang, R. Shafiiha, D. Feng, G. Li, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “Thermally tunable silicon racetrack resonators with ultralow tuning power,” Opt. Express 18(19), 20298–20304 (2010).
[CrossRef] [PubMed]

A. W. Fang, R. Jones, H. Park, O. Cohen, O. Raday, M. J. Paniccia, and J. E. Bowers, “Integrated AlGaInAs-silicon evanescent race track laser and photodetector,” Opt. Express 15(5), 2315–2322 (2007).
[CrossRef] [PubMed]

T. Wang, H. Liu, A. Lee, F. Pozzi, and A. Seeds, “1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates,” Opt. Express 19(12), 11381–11386 (2011).
[CrossRef] [PubMed]

L. Vivien, A. Polzer, D. Marris-Morini, J. Osmond, J. M. Hartmann, P. Crozat, E. Cassan, C. Kopp, H. Zimmermann, and J. M. Fédéli, “Zero-bias 40Gbit/s germanium waveguide photodetector on silicon,” Opt. Express 20(2), 1096–1101 (2012).
[CrossRef] [PubMed]

R. E. Camacho-Aguilera, Y. Cai, N. Patel, J. T. Bessette, M. Romagnoli, L. C. Kimerling, and J. Michel, “An electrically pumped germanium laser,” Opt. Express 20(10), 11316–11320 (2012).
[CrossRef] [PubMed]

X. Wang, W. Shi, H. Yun, S. Grist, N. A. F. Jaeger, and L. Chrostowski, “Narrow-band waveguide Bragg gratings on SOI wafers with CMOS-compatible fabrication process,” Opt. Express 20(14), 15547–15558 (2012).
[CrossRef] [PubMed]

A. J. Zilkie, P. Seddighian, B. J. Bijlani, W. Qian, D. C. Lee, S. Fathololoumi, J. Fong, R. Shafiiha, D. Feng, B. J. Luff, X. Zheng, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “Power-efficient III-V/silicon external cavity DBR lasers,” Opt. Express 20(21), 23456–23462 (2012).
[CrossRef] [PubMed]

K. Padmaraju, J. Chan, L. Chen, M. Lipson, and K. Bergman, “Thermal stabilization of a microring modulator using feedback control,” Opt. Express 20(27), 27999–28008 (2012).
[CrossRef] [PubMed]

S. Tanaka, S.-H. Jeong, S. Sekiguchi, T. Kurahashi, Y. Tanaka, and K. Morito, “High-output-power, single-wavelength silicon hybrid laser using precise flip-chip bonding technology,” Opt. Express 20(27), 28057–28069 (2012).
[CrossRef] [PubMed]

Y. Zhang, S. Yang, A. E.-J. Lim, G.-Q. Lo, C. Galland, T. Baehr-Jones, and M. Hochberg, “A compact and low loss Y-junction for submicron silicon waveguide,” Opt. Express 21(1), 1310–1316 (2013).
[CrossRef] [PubMed]

S. Keyvaninia, G. Roelkens, D. Van Thourhout, C. Jany, M. Lamponi, A. Le Liepvre, F. Lelarge, D. Make, G.-H. Duan, D. Bordel, and J.-M. Fedeli, “Demonstration of a heterogeneously integrated III-V/SOI single wavelength tunable laser,” Opt. Express 21(3), 3784–3792 (2013).
[CrossRef] [PubMed]

T. Creazzo, E. Marchena, S. B. Krasulick, P. K. Yu, D. Van Orden, J. Y. Spann, C. C. Blivin, L. He, H. Cai, J. M. Dallesasse, R. J. Stone, and A. Mizrahi, “Integrated tunable CMOS laser,” Opt. Express 21(23), 28048–28053 (2013).
[CrossRef] [PubMed]

S.-H. Jeong, D. Shimura, T. Simoyama, M. Seki, N. Yokoyama, M. Ohtsuka, K. Koshino, T. Horikawa, Y. Tanaka, and K. Morito, “Low-loss, flat-topped and spectrally uniform silicon-nanowire-based 5th-order CROW fabricated by ArF-immersion lithography process on a 300-mm SOI wafer,” Opt. Express 21(25), 30163–30174 (2013).
[CrossRef] [PubMed]

S. Yang, Y. Zhang, D. W. Grund, G. A. Ejzak, Y. Liu, A. Novack, D. Prather, A. E.-J. Lim, G.-Q. Lo, T. Baehr-Jones, and M. Hochberg, “A single adiabatic microring-based laser in 220 nm silicon-on-insulator,” Opt. Express 22(1), 1172–1180 (2014).
[CrossRef] [PubMed]

J. H. Lee, I. Shubin, J. Yao, J. Bickford, Y. Luo, S. Lin, S. S. Djordjevic, H. D. Thacker, J. E. Cunningham, K. Raj, X. Zheng, and A. V. Krishnamoorthy, “High power and widely tunable Si hybrid external-cavity laser for power efficient Si photonics WDM links,” Opt. Express 22(7), 7678–7685 (2014).
[CrossRef] [PubMed]

J. C. Mikkelsen, W. D. Sacher, and J. K.-S. Poon, “Adiabatically widened silicon microrings for improved variation tolerance,” Opt. Express 22(8), 9659–9666 (2014).
[CrossRef] [PubMed]

Y. Zhang, S. Yang, Y. Yang, M. Gould, N. Ophir, A. E.-J. Lim, G.-Q. Lo, P. Magill, K. Bergman, T. Baehr-Jones, and M. Hochberg, “A high-responsivity photodetector absent metal-germanium direct contact,” Opt. Express 22(9), 11367–11375 (2014).
[CrossRef] [PubMed]

Opt. Lett. (1)

Proc. SPIE (2)

Y. Zhang, M. Streshinsky, A. Novack, Y. Ma, S. Yang, A. E.-J. Lim, G.-Q. Lo, T. Baehr-Jones, and M. Hochberg, “A compact and low-loss silicon waveguide crossing for O-band optical interconnect,” Proc. SPIE 8990, 899002 (2014).
[CrossRef]

A. Novack, Y. Liu, R. Ding, M. Gould, T. Baehr-Jones, Q. Li, Y. Yang, Y. Ma, Y. Zhang, K. Padmaraju, K. Bergmen, A. E.-J. Lim, G.-Q. Lo, and M. Hochberg, “A 30 GHz silicon photonic platform,” Proc. SPIE 8781, 878107 (2013).
[CrossRef]

Other (2)

D. Feng, S. Jatar, J. Luff, and M. Asghari, “Micron-scale silicon photonic devices and circuits,” in Optical Fiber Communications Conference (OFC) (2014), paper Th4C.
[CrossRef]

S. Assefa, S. Shank, W. Green, M. Khater, E. Kiewra, C. Reinholm, S. Kamlapurkar, A. Rylyakov, C. Schow, F. Horst, H. Pan, T. Topuria, P. Rice, D. M. Gill, J. Rosenberg, T. Barwicz, M. Yang, J. Proesel, J. Hofrichter, B. Offrein, X. Gu, W. Haensch, J. Ellis-Monaghan, and Y. Vlasov, “A 90nm CMOS integrated nano-photonics technology for 25 Gbps WDM optical communications applications,” in IEEE International Electron Devices Meeting (IEDM) (2012), pp. 33.8.1–33.8.3.

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Figures (6)

Fig. 1
Fig. 1

Diagram of Sagnac loop mirror based laser cavity.

Fig. 2
Fig. 2

(a) Sagnac loop mirror transmission spectrum measured using a tunable laser and grating couplers; Normalized transmittance spectrum is shown in the inset; (b) Transmittance and reflectivity of Sagnac loop mirror as a function of DC coupling length at 1550 nm wavelength.

Fig. 3
Fig. 3

(a) Spectrum of AMR drop (solid) and through (dashed) ports. Inset is schematic of AMR layout, where w1 = 0.3 µm, w2 = 0.46 µm, w3 = 0.76 µm, and w4 = 0.2 µm; (b) Contour plot for resonant wavelength distribution across an 8-inch wafer; (c) Statistics of the resonant wavelength distribution.

Fig. 4
Fig. 4

AMR resonance increase as ring radius increases, measured on 31 reticles across an 8-inch wafer.

Fig. 5
Fig. 5

Image of the testing setup and zoom-in view of SOA-silicon chip interface.

Fig. 6
Fig. 6

(a) Optical spectrum with 0.1 nm resolution; (b) Heterodyne spectrum (blue dot) and a Lorentzian fit curve with 1.28 MHz FWHM.

Tables (1)

Tables Icon

Table 1 Resonant wavelength distribution of AMR with slightly different radius.

Equations (1)

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T= cos 2 ( π L x+φ)

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