Abstract

ZnO p-n homojunction light-emitting devices (LEDs) have been fabricated, and by introducing a p-type GaN as the hole-injection layer, the output power of the LEDs can reach 18.5 μW when the drive current is 60 mA, which is almost three orders of magnitude larger than the pristine LEDs without the hole-injection layer. The improved performance can be attributed to the extra holes injected into the p-ZnO layer from the p-GaN hole-injection layer.

© 2014 Optical Society of America

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    [CrossRef]
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  21. J. S. Liu, C. X. Shan, H. Shen, B. H. Li, Z. Z. Zhang, L. Liu, L. G. Zhang, and D. Z. Shen, “ZnO light-emitting devices with a lifetime of 6.8 hours,” Appl. Phys. Lett. 101(1), 011106 (2012).
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    [CrossRef]
  24. F. K. Shan, G. X. Liu, W. J. Lee, and B. C. Shin, “The role of oxygen vacancies in epitaxial-deposited ZnO thin films,” J. Appl. Phys. 101(5), 053106 (2007).
    [CrossRef]
  25. S. H. Jeong, B. S. Kim, and B. T. Lee, “Photoluminescence dependence of ZnO films grown on Si(100) by radio-frequency magnetron sputtering on the growth ambient,” Appl. Phys. Lett. 82(16), 2625–2627 (2003).
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    [CrossRef]
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    [CrossRef]
  29. X. Y. Liu, C. X. Shan, S. P. Wang, H. F. Zhao, and D. Z. Shen, “Intense emission from ZnO nanocolumn Schottky diodes,” Nanoscale 5(17), 7746–7749 (2013).
    [CrossRef] [PubMed]
  30. O. Lupan, T. Pauporté, and B. Viana, “Low-voltage UV-electroluminescence from ZnO-nanowire Array/p-GaN light-emitting diodes,” Adv. Mater. 22(30), 3298–3302 (2010).
    [CrossRef] [PubMed]
  31. G. T. Du, W. Zhao, G. G. Wu, Z. F. Shi, X. C. Xia, Y. Liu, H. W. Liang, X. Dong, Y. Ma, and B. L. Zhang, “Electrically pumped lasing from p-ZnO/n-GaN heterojunction diodes,” Appl. Phys. Lett. 101(5), 053503 (2012).
    [CrossRef]

2013

Y. Y. Lai, Y. P. Lan, and T. C. Lu, “Strong light-matter interaction in ZnO microcavities,” Light: Sci. Appl. 2(6), e76 (2013).
[CrossRef]

J. C. Fan, K. M. Sreekanth, Z. Xie, S. L. Chang, and K. V. Rao, “p-Type ZnO materials: Theory, growth, properties and devices,” Prog. Mater. Sci. 58(6), 874–985 (2013).
[CrossRef]

S. L. Li and L. C. Zhang, “Improvement of the electroluminescence performance of ZnO nanorods/p-GaN light emitting diodes with a ZnO films interlayer,” J. Semicond. 34(11), 114010 (2013).
[CrossRef]

X. Y. Liu, C. X. Shan, S. P. Wang, H. F. Zhao, and D. Z. Shen, “Intense emission from ZnO nanocolumn Schottky diodes,” Nanoscale 5(17), 7746–7749 (2013).
[CrossRef] [PubMed]

Y. S. Choi, J. W. Kang, B. H. Kim, D. K. Na, S. J. Lee, and S. J. Park, “Improved electroluminescence from ZnO light-emitting diodes by p-type MgZnO electron blocking layer,” Opt. Express 21(10), 11698–11704 (2013).
[CrossRef] [PubMed]

J. S. Liu, C. X. Shan, B. H. Li, Z. Z. Zhang, K. W. Liu, and D. Z. Shen, “MgZnO p-n heterostructure light-emitting devices,” Opt. Lett. 38(12), 2113–2115 (2013).
[CrossRef] [PubMed]

2012

G. T. Du, W. Zhao, G. G. Wu, Z. F. Shi, X. C. Xia, Y. Liu, H. W. Liang, X. Dong, Y. Ma, and B. L. Zhang, “Electrically pumped lasing from p-ZnO/n-GaN heterojunction diodes,” Appl. Phys. Lett. 101(5), 053503 (2012).
[CrossRef]

J. S. Liu, C. X. Shan, H. Shen, B. H. Li, Z. Z. Zhang, L. Liu, L. G. Zhang, and D. Z. Shen, “ZnO light-emitting devices with a lifetime of 6.8 hours,” Appl. Phys. Lett. 101(1), 011106 (2012).
[CrossRef]

2011

H. Kato, T. Yamamuro, A. Ogawa, C. Kyotani, and M. Sano, “Impact of Mixture Gas Plasma of N2 and O2 as the N Source on ZnO-Based Ultraviolet Light-Emitting Diodes Fabricated by Molecular Beam Epitaxy,” Appl. Phys. Express 4(9), 091105 (2011).
[CrossRef]

F. Sun, C. X. Shan, B. H. Li, Z. Z. Zhang, D. Z. Shen, Z. Y. Zhang, and D. Fan, “A reproducible route to p-ZnO films and their application in light-emitting devices,” Opt. Lett. 36(4), 499–501 (2011).
[CrossRef] [PubMed]

2010

H. K. Liang, S. F. Yu, and H. Y. Yang, “Edge-emitting ultraviolet n-ZnO:Al/i-ZnO/p-GaN heterojunction light-emitting diode with a rib waveguide,” Opt. Express 18(4), 3687–3692 (2010).
[CrossRef] [PubMed]

O. Lupan, T. Pauporté, and B. Viana, “Low-voltage UV-electroluminescence from ZnO-nanowire Array/p-GaN light-emitting diodes,” Adv. Mater. 22(30), 3298–3302 (2010).
[CrossRef] [PubMed]

K. Nakahara, S. Akasaka, H. Yuji, K. Tamura, T. Fujii, Y. Nishimoto, D. Takamizu, A. Sasaki, T. Tanabe, H. Takasu, H. Amaike, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Nitrogen doped MgxZn1-xO/ZnO single heterostructure ultraviolet light-emitting diodes on ZnO substrates,” Appl. Phys. Lett. 97(1), 013501 (2010).
[CrossRef]

J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 96(20), 201102 (2010).
[CrossRef]

2009

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-Threshold Laser Realized in Zinc Oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[CrossRef]

2008

S. Chu, J. H. Lim, L. J. Mandalapu, Z. Yang, L. Li, and J. L. Liu, “Sb-doped p-ZnO/Ga-doped n-ZnO homojunction ultraviolet light emitting diodes,” Appl. Phys. Lett. 92(15), 152103 (2008).
[CrossRef]

2007

F. K. Shan, G. X. Liu, W. J. Lee, and B. C. Shin, “The role of oxygen vacancies in epitaxial-deposited ZnO thin films,” J. Appl. Phys. 101(5), 053106 (2007).
[CrossRef]

D. K. Hwang, M. S. Oh, J. H. Lim, and S. J. Park, “ZnO thin films and light-emitting diodes,” J. Phys. D Appl. Phys. 40(22), R387–R412 (2007).
[CrossRef]

2006

S. J. Jiao, Z. Z. Zhang, Y. M. Lu, D. Z. Shen, B. Yao, J. Y. Zhang, B. H. Li, D. X. Zhao, X. W. Fan, and Z. K. Tang, “ZnO p-n junction light-emitting diodes fabricated on sapphire substrates,” Appl. Phys. Lett. 88(3), 031911 (2006).
[CrossRef]

Y. R. Ryu, T. S. Lee, J. A. Lubguban, H. W. White, B. J. Kim, Y. S. Park, and C. J. Youn, “Next generation of oxide photonic devices: ZnO-based ultraviolet light emitting diodes,” Appl. Phys. Lett. 88(24), 241108 (2006).
[CrossRef]

J. H. Lim, C. K. Kang, K. K. Kim, I. K. Park, D. K. Hwang, and S. J. Park, “UV Electroluminescence Emission from ZnO Light-Emitting Diodes Grown by High-Temperature Radiofrequency Sputtering,” Adv. Mater. 18(20), 2720–2724 (2006).
[CrossRef]

2005

A. Tsukazaki, M. Kubota, A. Ohtomo, T. Onuma, K. Ohtani, H. Ohno, S. F. Chichibu, and M. Kawasaki, “Blue light-emitting diode based on ZnO,” Jpn. J. Appl. Phys. 44(21), L643–L645 (2005).
[CrossRef]

C. Yuen, S. F. Yu, S. P. Lau, Rusli, and T. P. Chen, “Fabrication of n-ZnO:Al/p-SiC(4H) heterojunction light-emitting diodes by filtered cathodic vacuum arc technique,” Appl. Phys. Lett. 86(24), 241111 (2005).
[CrossRef]

2004

W. I. Park and G. C. Yi, “Electroluminescence in n-ZnO Nanorod Arrays Vertically Grown on p-GaN,” Adv. Mater. 16(1), 87–90 (2004).
[CrossRef]

A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, “Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO,” Nat. Mater. 4(1), 42–46 (2004).
[CrossRef]

2003

Y. I. Alivov, E. V. Kalinina, A. E. Cherenkov, D. C. Look, B. M. Ataev, A. K. Omaev, M. V. Chukichev, and D. M. Bagnall, “Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates,” Appl. Phys. Lett. 83(23), 4719 (2003).
[CrossRef]

Y. I. Alivov, J. E. Van Nostrand, D. C. Look, M. V. Chukichev, and B. M. Ataev, “Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 83(14), 2943 (2003).
[CrossRef]

S. H. Jeong, B. S. Kim, and B. T. Lee, “Photoluminescence dependence of ZnO films grown on Si(100) by radio-frequency magnetron sputtering on the growth ambient,” Appl. Phys. Lett. 82(16), 2625–2627 (2003).
[CrossRef]

2002

D. C. Look, D. C. Reynolds, C. W. Litton, R. L. Jones, D. B. Eason, and G. Cantwell, “Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy,” Appl. Phys. Lett. 81(10), 1830 (2002).
[CrossRef]

2001

D. C. Look, “Recent advances in ZnO materials and devices,” Mater. Sci. Eng. B 80(1–3), 383–387 (2001).
[CrossRef]

Akasaka, S.

K. Nakahara, S. Akasaka, H. Yuji, K. Tamura, T. Fujii, Y. Nishimoto, D. Takamizu, A. Sasaki, T. Tanabe, H. Takasu, H. Amaike, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Nitrogen doped MgxZn1-xO/ZnO single heterostructure ultraviolet light-emitting diodes on ZnO substrates,” Appl. Phys. Lett. 97(1), 013501 (2010).
[CrossRef]

Alivov, Y. I.

Y. I. Alivov, J. E. Van Nostrand, D. C. Look, M. V. Chukichev, and B. M. Ataev, “Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 83(14), 2943 (2003).
[CrossRef]

Y. I. Alivov, E. V. Kalinina, A. E. Cherenkov, D. C. Look, B. M. Ataev, A. K. Omaev, M. V. Chukichev, and D. M. Bagnall, “Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates,” Appl. Phys. Lett. 83(23), 4719 (2003).
[CrossRef]

Amaike, H.

K. Nakahara, S. Akasaka, H. Yuji, K. Tamura, T. Fujii, Y. Nishimoto, D. Takamizu, A. Sasaki, T. Tanabe, H. Takasu, H. Amaike, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Nitrogen doped MgxZn1-xO/ZnO single heterostructure ultraviolet light-emitting diodes on ZnO substrates,” Appl. Phys. Lett. 97(1), 013501 (2010).
[CrossRef]

Ataev, B. M.

Y. I. Alivov, J. E. Van Nostrand, D. C. Look, M. V. Chukichev, and B. M. Ataev, “Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 83(14), 2943 (2003).
[CrossRef]

Y. I. Alivov, E. V. Kalinina, A. E. Cherenkov, D. C. Look, B. M. Ataev, A. K. Omaev, M. V. Chukichev, and D. M. Bagnall, “Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates,” Appl. Phys. Lett. 83(23), 4719 (2003).
[CrossRef]

Bagnall, D. M.

Y. I. Alivov, E. V. Kalinina, A. E. Cherenkov, D. C. Look, B. M. Ataev, A. K. Omaev, M. V. Chukichev, and D. M. Bagnall, “Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates,” Appl. Phys. Lett. 83(23), 4719 (2003).
[CrossRef]

Cantwell, G.

D. C. Look, D. C. Reynolds, C. W. Litton, R. L. Jones, D. B. Eason, and G. Cantwell, “Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy,” Appl. Phys. Lett. 81(10), 1830 (2002).
[CrossRef]

Chang, S. L.

J. C. Fan, K. M. Sreekanth, Z. Xie, S. L. Chang, and K. V. Rao, “p-Type ZnO materials: Theory, growth, properties and devices,” Prog. Mater. Sci. 58(6), 874–985 (2013).
[CrossRef]

Chen, T. P.

C. Yuen, S. F. Yu, S. P. Lau, Rusli, and T. P. Chen, “Fabrication of n-ZnO:Al/p-SiC(4H) heterojunction light-emitting diodes by filtered cathodic vacuum arc technique,” Appl. Phys. Lett. 86(24), 241111 (2005).
[CrossRef]

Cherenkov, A. E.

Y. I. Alivov, E. V. Kalinina, A. E. Cherenkov, D. C. Look, B. M. Ataev, A. K. Omaev, M. V. Chukichev, and D. M. Bagnall, “Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates,” Appl. Phys. Lett. 83(23), 4719 (2003).
[CrossRef]

Chichibu, S. F.

K. Nakahara, S. Akasaka, H. Yuji, K. Tamura, T. Fujii, Y. Nishimoto, D. Takamizu, A. Sasaki, T. Tanabe, H. Takasu, H. Amaike, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Nitrogen doped MgxZn1-xO/ZnO single heterostructure ultraviolet light-emitting diodes on ZnO substrates,” Appl. Phys. Lett. 97(1), 013501 (2010).
[CrossRef]

A. Tsukazaki, M. Kubota, A. Ohtomo, T. Onuma, K. Ohtani, H. Ohno, S. F. Chichibu, and M. Kawasaki, “Blue light-emitting diode based on ZnO,” Jpn. J. Appl. Phys. 44(21), L643–L645 (2005).
[CrossRef]

A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, “Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO,” Nat. Mater. 4(1), 42–46 (2004).
[CrossRef]

Choi, Y. S.

Chow, P. P.

J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 96(20), 201102 (2010).
[CrossRef]

Chu, P. K.

J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 96(20), 201102 (2010).
[CrossRef]

Chu, S.

S. Chu, J. H. Lim, L. J. Mandalapu, Z. Yang, L. Li, and J. L. Liu, “Sb-doped p-ZnO/Ga-doped n-ZnO homojunction ultraviolet light emitting diodes,” Appl. Phys. Lett. 92(15), 152103 (2008).
[CrossRef]

Chukichev, M. V.

Y. I. Alivov, J. E. Van Nostrand, D. C. Look, M. V. Chukichev, and B. M. Ataev, “Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 83(14), 2943 (2003).
[CrossRef]

Y. I. Alivov, E. V. Kalinina, A. E. Cherenkov, D. C. Look, B. M. Ataev, A. K. Omaev, M. V. Chukichev, and D. M. Bagnall, “Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates,” Appl. Phys. Lett. 83(23), 4719 (2003).
[CrossRef]

Cui, B.

J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 96(20), 201102 (2010).
[CrossRef]

Dabiran, A. M.

J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 96(20), 201102 (2010).
[CrossRef]

Dong, X.

G. T. Du, W. Zhao, G. G. Wu, Z. F. Shi, X. C. Xia, Y. Liu, H. W. Liang, X. Dong, Y. Ma, and B. L. Zhang, “Electrically pumped lasing from p-ZnO/n-GaN heterojunction diodes,” Appl. Phys. Lett. 101(5), 053503 (2012).
[CrossRef]

Du, G. T.

G. T. Du, W. Zhao, G. G. Wu, Z. F. Shi, X. C. Xia, Y. Liu, H. W. Liang, X. Dong, Y. Ma, and B. L. Zhang, “Electrically pumped lasing from p-ZnO/n-GaN heterojunction diodes,” Appl. Phys. Lett. 101(5), 053503 (2012).
[CrossRef]

Eason, D. B.

D. C. Look, D. C. Reynolds, C. W. Litton, R. L. Jones, D. B. Eason, and G. Cantwell, “Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy,” Appl. Phys. Lett. 81(10), 1830 (2002).
[CrossRef]

Fan, D.

Fan, J. C.

J. C. Fan, K. M. Sreekanth, Z. Xie, S. L. Chang, and K. V. Rao, “p-Type ZnO materials: Theory, growth, properties and devices,” Prog. Mater. Sci. 58(6), 874–985 (2013).
[CrossRef]

Fan, X. W.

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-Threshold Laser Realized in Zinc Oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[CrossRef]

S. J. Jiao, Z. Z. Zhang, Y. M. Lu, D. Z. Shen, B. Yao, J. Y. Zhang, B. H. Li, D. X. Zhao, X. W. Fan, and Z. K. Tang, “ZnO p-n junction light-emitting diodes fabricated on sapphire substrates,” Appl. Phys. Lett. 88(3), 031911 (2006).
[CrossRef]

Fujii, T.

K. Nakahara, S. Akasaka, H. Yuji, K. Tamura, T. Fujii, Y. Nishimoto, D. Takamizu, A. Sasaki, T. Tanabe, H. Takasu, H. Amaike, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Nitrogen doped MgxZn1-xO/ZnO single heterostructure ultraviolet light-emitting diodes on ZnO substrates,” Appl. Phys. Lett. 97(1), 013501 (2010).
[CrossRef]

Fuke, S.

A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, “Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO,” Nat. Mater. 4(1), 42–46 (2004).
[CrossRef]

Hwang, D. K.

D. K. Hwang, M. S. Oh, J. H. Lim, and S. J. Park, “ZnO thin films and light-emitting diodes,” J. Phys. D Appl. Phys. 40(22), R387–R412 (2007).
[CrossRef]

J. H. Lim, C. K. Kang, K. K. Kim, I. K. Park, D. K. Hwang, and S. J. Park, “UV Electroluminescence Emission from ZnO Light-Emitting Diodes Grown by High-Temperature Radiofrequency Sputtering,” Adv. Mater. 18(20), 2720–2724 (2006).
[CrossRef]

Jeong, S. H.

S. H. Jeong, B. S. Kim, and B. T. Lee, “Photoluminescence dependence of ZnO films grown on Si(100) by radio-frequency magnetron sputtering on the growth ambient,” Appl. Phys. Lett. 82(16), 2625–2627 (2003).
[CrossRef]

Jiao, S. J.

S. J. Jiao, Z. Z. Zhang, Y. M. Lu, D. Z. Shen, B. Yao, J. Y. Zhang, B. H. Li, D. X. Zhao, X. W. Fan, and Z. K. Tang, “ZnO p-n junction light-emitting diodes fabricated on sapphire substrates,” Appl. Phys. Lett. 88(3), 031911 (2006).
[CrossRef]

Jones, R. L.

D. C. Look, D. C. Reynolds, C. W. Litton, R. L. Jones, D. B. Eason, and G. Cantwell, “Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy,” Appl. Phys. Lett. 81(10), 1830 (2002).
[CrossRef]

Kalinina, E. V.

Y. I. Alivov, E. V. Kalinina, A. E. Cherenkov, D. C. Look, B. M. Ataev, A. K. Omaev, M. V. Chukichev, and D. M. Bagnall, “Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates,” Appl. Phys. Lett. 83(23), 4719 (2003).
[CrossRef]

Kang, C. K.

J. H. Lim, C. K. Kang, K. K. Kim, I. K. Park, D. K. Hwang, and S. J. Park, “UV Electroluminescence Emission from ZnO Light-Emitting Diodes Grown by High-Temperature Radiofrequency Sputtering,” Adv. Mater. 18(20), 2720–2724 (2006).
[CrossRef]

Kang, J. W.

Kato, H.

H. Kato, T. Yamamuro, A. Ogawa, C. Kyotani, and M. Sano, “Impact of Mixture Gas Plasma of N2 and O2 as the N Source on ZnO-Based Ultraviolet Light-Emitting Diodes Fabricated by Molecular Beam Epitaxy,” Appl. Phys. Express 4(9), 091105 (2011).
[CrossRef]

Kawasaki, M.

K. Nakahara, S. Akasaka, H. Yuji, K. Tamura, T. Fujii, Y. Nishimoto, D. Takamizu, A. Sasaki, T. Tanabe, H. Takasu, H. Amaike, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Nitrogen doped MgxZn1-xO/ZnO single heterostructure ultraviolet light-emitting diodes on ZnO substrates,” Appl. Phys. Lett. 97(1), 013501 (2010).
[CrossRef]

A. Tsukazaki, M. Kubota, A. Ohtomo, T. Onuma, K. Ohtani, H. Ohno, S. F. Chichibu, and M. Kawasaki, “Blue light-emitting diode based on ZnO,” Jpn. J. Appl. Phys. 44(21), L643–L645 (2005).
[CrossRef]

A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, “Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO,” Nat. Mater. 4(1), 42–46 (2004).
[CrossRef]

Kim, B. H.

Kim, B. J.

Y. R. Ryu, T. S. Lee, J. A. Lubguban, H. W. White, B. J. Kim, Y. S. Park, and C. J. Youn, “Next generation of oxide photonic devices: ZnO-based ultraviolet light emitting diodes,” Appl. Phys. Lett. 88(24), 241108 (2006).
[CrossRef]

Kim, B. S.

S. H. Jeong, B. S. Kim, and B. T. Lee, “Photoluminescence dependence of ZnO films grown on Si(100) by radio-frequency magnetron sputtering on the growth ambient,” Appl. Phys. Lett. 82(16), 2625–2627 (2003).
[CrossRef]

Kim, K. K.

J. H. Lim, C. K. Kang, K. K. Kim, I. K. Park, D. K. Hwang, and S. J. Park, “UV Electroluminescence Emission from ZnO Light-Emitting Diodes Grown by High-Temperature Radiofrequency Sputtering,” Adv. Mater. 18(20), 2720–2724 (2006).
[CrossRef]

Koinuma, H.

A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, “Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO,” Nat. Mater. 4(1), 42–46 (2004).
[CrossRef]

Kubota, M.

A. Tsukazaki, M. Kubota, A. Ohtomo, T. Onuma, K. Ohtani, H. Ohno, S. F. Chichibu, and M. Kawasaki, “Blue light-emitting diode based on ZnO,” Jpn. J. Appl. Phys. 44(21), L643–L645 (2005).
[CrossRef]

Kyotani, C.

H. Kato, T. Yamamuro, A. Ogawa, C. Kyotani, and M. Sano, “Impact of Mixture Gas Plasma of N2 and O2 as the N Source on ZnO-Based Ultraviolet Light-Emitting Diodes Fabricated by Molecular Beam Epitaxy,” Appl. Phys. Express 4(9), 091105 (2011).
[CrossRef]

Lai, Y. Y.

Y. Y. Lai, Y. P. Lan, and T. C. Lu, “Strong light-matter interaction in ZnO microcavities,” Light: Sci. Appl. 2(6), e76 (2013).
[CrossRef]

Lan, Y. P.

Y. Y. Lai, Y. P. Lan, and T. C. Lu, “Strong light-matter interaction in ZnO microcavities,” Light: Sci. Appl. 2(6), e76 (2013).
[CrossRef]

Lau, S. P.

C. Yuen, S. F. Yu, S. P. Lau, Rusli, and T. P. Chen, “Fabrication of n-ZnO:Al/p-SiC(4H) heterojunction light-emitting diodes by filtered cathodic vacuum arc technique,” Appl. Phys. Lett. 86(24), 241111 (2005).
[CrossRef]

Lee, B. T.

S. H. Jeong, B. S. Kim, and B. T. Lee, “Photoluminescence dependence of ZnO films grown on Si(100) by radio-frequency magnetron sputtering on the growth ambient,” Appl. Phys. Lett. 82(16), 2625–2627 (2003).
[CrossRef]

Lee, S. J.

Lee, T. S.

Y. R. Ryu, T. S. Lee, J. A. Lubguban, H. W. White, B. J. Kim, Y. S. Park, and C. J. Youn, “Next generation of oxide photonic devices: ZnO-based ultraviolet light emitting diodes,” Appl. Phys. Lett. 88(24), 241108 (2006).
[CrossRef]

Lee, W. J.

F. K. Shan, G. X. Liu, W. J. Lee, and B. C. Shin, “The role of oxygen vacancies in epitaxial-deposited ZnO thin films,” J. Appl. Phys. 101(5), 053106 (2007).
[CrossRef]

Li, B. H.

J. S. Liu, C. X. Shan, B. H. Li, Z. Z. Zhang, K. W. Liu, and D. Z. Shen, “MgZnO p-n heterostructure light-emitting devices,” Opt. Lett. 38(12), 2113–2115 (2013).
[CrossRef] [PubMed]

J. S. Liu, C. X. Shan, H. Shen, B. H. Li, Z. Z. Zhang, L. Liu, L. G. Zhang, and D. Z. Shen, “ZnO light-emitting devices with a lifetime of 6.8 hours,” Appl. Phys. Lett. 101(1), 011106 (2012).
[CrossRef]

F. Sun, C. X. Shan, B. H. Li, Z. Z. Zhang, D. Z. Shen, Z. Y. Zhang, and D. Fan, “A reproducible route to p-ZnO films and their application in light-emitting devices,” Opt. Lett. 36(4), 499–501 (2011).
[CrossRef] [PubMed]

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-Threshold Laser Realized in Zinc Oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[CrossRef]

S. J. Jiao, Z. Z. Zhang, Y. M. Lu, D. Z. Shen, B. Yao, J. Y. Zhang, B. H. Li, D. X. Zhao, X. W. Fan, and Z. K. Tang, “ZnO p-n junction light-emitting diodes fabricated on sapphire substrates,” Appl. Phys. Lett. 88(3), 031911 (2006).
[CrossRef]

Li, L.

S. Chu, J. H. Lim, L. J. Mandalapu, Z. Yang, L. Li, and J. L. Liu, “Sb-doped p-ZnO/Ga-doped n-ZnO homojunction ultraviolet light emitting diodes,” Appl. Phys. Lett. 92(15), 152103 (2008).
[CrossRef]

Li, S. L.

S. L. Li and L. C. Zhang, “Improvement of the electroluminescence performance of ZnO nanorods/p-GaN light emitting diodes with a ZnO films interlayer,” J. Semicond. 34(11), 114010 (2013).
[CrossRef]

Liang, H. K.

Liang, H. W.

G. T. Du, W. Zhao, G. G. Wu, Z. F. Shi, X. C. Xia, Y. Liu, H. W. Liang, X. Dong, Y. Ma, and B. L. Zhang, “Electrically pumped lasing from p-ZnO/n-GaN heterojunction diodes,” Appl. Phys. Lett. 101(5), 053503 (2012).
[CrossRef]

Lim, J. H.

S. Chu, J. H. Lim, L. J. Mandalapu, Z. Yang, L. Li, and J. L. Liu, “Sb-doped p-ZnO/Ga-doped n-ZnO homojunction ultraviolet light emitting diodes,” Appl. Phys. Lett. 92(15), 152103 (2008).
[CrossRef]

D. K. Hwang, M. S. Oh, J. H. Lim, and S. J. Park, “ZnO thin films and light-emitting diodes,” J. Phys. D Appl. Phys. 40(22), R387–R412 (2007).
[CrossRef]

J. H. Lim, C. K. Kang, K. K. Kim, I. K. Park, D. K. Hwang, and S. J. Park, “UV Electroluminescence Emission from ZnO Light-Emitting Diodes Grown by High-Temperature Radiofrequency Sputtering,” Adv. Mater. 18(20), 2720–2724 (2006).
[CrossRef]

Litton, C. W.

D. C. Look, D. C. Reynolds, C. W. Litton, R. L. Jones, D. B. Eason, and G. Cantwell, “Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy,” Appl. Phys. Lett. 81(10), 1830 (2002).
[CrossRef]

Liu, G. X.

F. K. Shan, G. X. Liu, W. J. Lee, and B. C. Shin, “The role of oxygen vacancies in epitaxial-deposited ZnO thin films,” J. Appl. Phys. 101(5), 053106 (2007).
[CrossRef]

Liu, J. L.

S. Chu, J. H. Lim, L. J. Mandalapu, Z. Yang, L. Li, and J. L. Liu, “Sb-doped p-ZnO/Ga-doped n-ZnO homojunction ultraviolet light emitting diodes,” Appl. Phys. Lett. 92(15), 152103 (2008).
[CrossRef]

Liu, J. S.

J. S. Liu, C. X. Shan, B. H. Li, Z. Z. Zhang, K. W. Liu, and D. Z. Shen, “MgZnO p-n heterostructure light-emitting devices,” Opt. Lett. 38(12), 2113–2115 (2013).
[CrossRef] [PubMed]

J. S. Liu, C. X. Shan, H. Shen, B. H. Li, Z. Z. Zhang, L. Liu, L. G. Zhang, and D. Z. Shen, “ZnO light-emitting devices with a lifetime of 6.8 hours,” Appl. Phys. Lett. 101(1), 011106 (2012).
[CrossRef]

Liu, K. W.

Liu, L.

J. S. Liu, C. X. Shan, H. Shen, B. H. Li, Z. Z. Zhang, L. Liu, L. G. Zhang, and D. Z. Shen, “ZnO light-emitting devices with a lifetime of 6.8 hours,” Appl. Phys. Lett. 101(1), 011106 (2012).
[CrossRef]

Liu, X. Y.

X. Y. Liu, C. X. Shan, S. P. Wang, H. F. Zhao, and D. Z. Shen, “Intense emission from ZnO nanocolumn Schottky diodes,” Nanoscale 5(17), 7746–7749 (2013).
[CrossRef] [PubMed]

Liu, Y.

G. T. Du, W. Zhao, G. G. Wu, Z. F. Shi, X. C. Xia, Y. Liu, H. W. Liang, X. Dong, Y. Ma, and B. L. Zhang, “Electrically pumped lasing from p-ZnO/n-GaN heterojunction diodes,” Appl. Phys. Lett. 101(5), 053503 (2012).
[CrossRef]

Look, D. C.

Y. I. Alivov, J. E. Van Nostrand, D. C. Look, M. V. Chukichev, and B. M. Ataev, “Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 83(14), 2943 (2003).
[CrossRef]

Y. I. Alivov, E. V. Kalinina, A. E. Cherenkov, D. C. Look, B. M. Ataev, A. K. Omaev, M. V. Chukichev, and D. M. Bagnall, “Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates,” Appl. Phys. Lett. 83(23), 4719 (2003).
[CrossRef]

D. C. Look, D. C. Reynolds, C. W. Litton, R. L. Jones, D. B. Eason, and G. Cantwell, “Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy,” Appl. Phys. Lett. 81(10), 1830 (2002).
[CrossRef]

D. C. Look, “Recent advances in ZnO materials and devices,” Mater. Sci. Eng. B 80(1–3), 383–387 (2001).
[CrossRef]

Lu, T. C.

Y. Y. Lai, Y. P. Lan, and T. C. Lu, “Strong light-matter interaction in ZnO microcavities,” Light: Sci. Appl. 2(6), e76 (2013).
[CrossRef]

Lu, Y. M.

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-Threshold Laser Realized in Zinc Oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[CrossRef]

S. J. Jiao, Z. Z. Zhang, Y. M. Lu, D. Z. Shen, B. Yao, J. Y. Zhang, B. H. Li, D. X. Zhao, X. W. Fan, and Z. K. Tang, “ZnO p-n junction light-emitting diodes fabricated on sapphire substrates,” Appl. Phys. Lett. 88(3), 031911 (2006).
[CrossRef]

Lubguban, J. A.

Y. R. Ryu, T. S. Lee, J. A. Lubguban, H. W. White, B. J. Kim, Y. S. Park, and C. J. Youn, “Next generation of oxide photonic devices: ZnO-based ultraviolet light emitting diodes,” Appl. Phys. Lett. 88(24), 241108 (2006).
[CrossRef]

Lupan, O.

O. Lupan, T. Pauporté, and B. Viana, “Low-voltage UV-electroluminescence from ZnO-nanowire Array/p-GaN light-emitting diodes,” Adv. Mater. 22(30), 3298–3302 (2010).
[CrossRef] [PubMed]

Ma, Y.

G. T. Du, W. Zhao, G. G. Wu, Z. F. Shi, X. C. Xia, Y. Liu, H. W. Liang, X. Dong, Y. Ma, and B. L. Zhang, “Electrically pumped lasing from p-ZnO/n-GaN heterojunction diodes,” Appl. Phys. Lett. 101(5), 053503 (2012).
[CrossRef]

Makino, T.

A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, “Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO,” Nat. Mater. 4(1), 42–46 (2004).
[CrossRef]

Mandalapu, L. J.

S. Chu, J. H. Lim, L. J. Mandalapu, Z. Yang, L. Li, and J. L. Liu, “Sb-doped p-ZnO/Ga-doped n-ZnO homojunction ultraviolet light emitting diodes,” Appl. Phys. Lett. 92(15), 152103 (2008).
[CrossRef]

Na, D. K.

Nakahara, K.

K. Nakahara, S. Akasaka, H. Yuji, K. Tamura, T. Fujii, Y. Nishimoto, D. Takamizu, A. Sasaki, T. Tanabe, H. Takasu, H. Amaike, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Nitrogen doped MgxZn1-xO/ZnO single heterostructure ultraviolet light-emitting diodes on ZnO substrates,” Appl. Phys. Lett. 97(1), 013501 (2010).
[CrossRef]

Nishimoto, Y.

K. Nakahara, S. Akasaka, H. Yuji, K. Tamura, T. Fujii, Y. Nishimoto, D. Takamizu, A. Sasaki, T. Tanabe, H. Takasu, H. Amaike, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Nitrogen doped MgxZn1-xO/ZnO single heterostructure ultraviolet light-emitting diodes on ZnO substrates,” Appl. Phys. Lett. 97(1), 013501 (2010).
[CrossRef]

Ogawa, A.

H. Kato, T. Yamamuro, A. Ogawa, C. Kyotani, and M. Sano, “Impact of Mixture Gas Plasma of N2 and O2 as the N Source on ZnO-Based Ultraviolet Light-Emitting Diodes Fabricated by Molecular Beam Epitaxy,” Appl. Phys. Express 4(9), 091105 (2011).
[CrossRef]

Oh, M. S.

D. K. Hwang, M. S. Oh, J. H. Lim, and S. J. Park, “ZnO thin films and light-emitting diodes,” J. Phys. D Appl. Phys. 40(22), R387–R412 (2007).
[CrossRef]

Ohno, H.

A. Tsukazaki, M. Kubota, A. Ohtomo, T. Onuma, K. Ohtani, H. Ohno, S. F. Chichibu, and M. Kawasaki, “Blue light-emitting diode based on ZnO,” Jpn. J. Appl. Phys. 44(21), L643–L645 (2005).
[CrossRef]

A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, “Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO,” Nat. Mater. 4(1), 42–46 (2004).
[CrossRef]

Ohtani, K.

A. Tsukazaki, M. Kubota, A. Ohtomo, T. Onuma, K. Ohtani, H. Ohno, S. F. Chichibu, and M. Kawasaki, “Blue light-emitting diode based on ZnO,” Jpn. J. Appl. Phys. 44(21), L643–L645 (2005).
[CrossRef]

A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, “Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO,” Nat. Mater. 4(1), 42–46 (2004).
[CrossRef]

Ohtani, M.

A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, “Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO,” Nat. Mater. 4(1), 42–46 (2004).
[CrossRef]

Ohtomo, A.

K. Nakahara, S. Akasaka, H. Yuji, K. Tamura, T. Fujii, Y. Nishimoto, D. Takamizu, A. Sasaki, T. Tanabe, H. Takasu, H. Amaike, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Nitrogen doped MgxZn1-xO/ZnO single heterostructure ultraviolet light-emitting diodes on ZnO substrates,” Appl. Phys. Lett. 97(1), 013501 (2010).
[CrossRef]

A. Tsukazaki, M. Kubota, A. Ohtomo, T. Onuma, K. Ohtani, H. Ohno, S. F. Chichibu, and M. Kawasaki, “Blue light-emitting diode based on ZnO,” Jpn. J. Appl. Phys. 44(21), L643–L645 (2005).
[CrossRef]

A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, “Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO,” Nat. Mater. 4(1), 42–46 (2004).
[CrossRef]

Omaev, A. K.

Y. I. Alivov, E. V. Kalinina, A. E. Cherenkov, D. C. Look, B. M. Ataev, A. K. Omaev, M. V. Chukichev, and D. M. Bagnall, “Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates,” Appl. Phys. Lett. 83(23), 4719 (2003).
[CrossRef]

Onuma, T.

K. Nakahara, S. Akasaka, H. Yuji, K. Tamura, T. Fujii, Y. Nishimoto, D. Takamizu, A. Sasaki, T. Tanabe, H. Takasu, H. Amaike, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Nitrogen doped MgxZn1-xO/ZnO single heterostructure ultraviolet light-emitting diodes on ZnO substrates,” Appl. Phys. Lett. 97(1), 013501 (2010).
[CrossRef]

A. Tsukazaki, M. Kubota, A. Ohtomo, T. Onuma, K. Ohtani, H. Ohno, S. F. Chichibu, and M. Kawasaki, “Blue light-emitting diode based on ZnO,” Jpn. J. Appl. Phys. 44(21), L643–L645 (2005).
[CrossRef]

A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, “Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO,” Nat. Mater. 4(1), 42–46 (2004).
[CrossRef]

Park, I. K.

J. H. Lim, C. K. Kang, K. K. Kim, I. K. Park, D. K. Hwang, and S. J. Park, “UV Electroluminescence Emission from ZnO Light-Emitting Diodes Grown by High-Temperature Radiofrequency Sputtering,” Adv. Mater. 18(20), 2720–2724 (2006).
[CrossRef]

Park, S. J.

Y. S. Choi, J. W. Kang, B. H. Kim, D. K. Na, S. J. Lee, and S. J. Park, “Improved electroluminescence from ZnO light-emitting diodes by p-type MgZnO electron blocking layer,” Opt. Express 21(10), 11698–11704 (2013).
[CrossRef] [PubMed]

D. K. Hwang, M. S. Oh, J. H. Lim, and S. J. Park, “ZnO thin films and light-emitting diodes,” J. Phys. D Appl. Phys. 40(22), R387–R412 (2007).
[CrossRef]

J. H. Lim, C. K. Kang, K. K. Kim, I. K. Park, D. K. Hwang, and S. J. Park, “UV Electroluminescence Emission from ZnO Light-Emitting Diodes Grown by High-Temperature Radiofrequency Sputtering,” Adv. Mater. 18(20), 2720–2724 (2006).
[CrossRef]

Park, W. I.

W. I. Park and G. C. Yi, “Electroluminescence in n-ZnO Nanorod Arrays Vertically Grown on p-GaN,” Adv. Mater. 16(1), 87–90 (2004).
[CrossRef]

Park, Y. S.

Y. R. Ryu, T. S. Lee, J. A. Lubguban, H. W. White, B. J. Kim, Y. S. Park, and C. J. Youn, “Next generation of oxide photonic devices: ZnO-based ultraviolet light emitting diodes,” Appl. Phys. Lett. 88(24), 241108 (2006).
[CrossRef]

Pauporté, T.

O. Lupan, T. Pauporté, and B. Viana, “Low-voltage UV-electroluminescence from ZnO-nanowire Array/p-GaN light-emitting diodes,” Adv. Mater. 22(30), 3298–3302 (2010).
[CrossRef] [PubMed]

Rao, K. V.

J. C. Fan, K. M. Sreekanth, Z. Xie, S. L. Chang, and K. V. Rao, “p-Type ZnO materials: Theory, growth, properties and devices,” Prog. Mater. Sci. 58(6), 874–985 (2013).
[CrossRef]

Reynolds, D. C.

D. C. Look, D. C. Reynolds, C. W. Litton, R. L. Jones, D. B. Eason, and G. Cantwell, “Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy,” Appl. Phys. Lett. 81(10), 1830 (2002).
[CrossRef]

Rusli,

C. Yuen, S. F. Yu, S. P. Lau, Rusli, and T. P. Chen, “Fabrication of n-ZnO:Al/p-SiC(4H) heterojunction light-emitting diodes by filtered cathodic vacuum arc technique,” Appl. Phys. Lett. 86(24), 241111 (2005).
[CrossRef]

Ryu, Y. R.

Y. R. Ryu, T. S. Lee, J. A. Lubguban, H. W. White, B. J. Kim, Y. S. Park, and C. J. Youn, “Next generation of oxide photonic devices: ZnO-based ultraviolet light emitting diodes,” Appl. Phys. Lett. 88(24), 241108 (2006).
[CrossRef]

Sano, M.

H. Kato, T. Yamamuro, A. Ogawa, C. Kyotani, and M. Sano, “Impact of Mixture Gas Plasma of N2 and O2 as the N Source on ZnO-Based Ultraviolet Light-Emitting Diodes Fabricated by Molecular Beam Epitaxy,” Appl. Phys. Express 4(9), 091105 (2011).
[CrossRef]

Sasaki, A.

K. Nakahara, S. Akasaka, H. Yuji, K. Tamura, T. Fujii, Y. Nishimoto, D. Takamizu, A. Sasaki, T. Tanabe, H. Takasu, H. Amaike, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Nitrogen doped MgxZn1-xO/ZnO single heterostructure ultraviolet light-emitting diodes on ZnO substrates,” Appl. Phys. Lett. 97(1), 013501 (2010).
[CrossRef]

Segawa, Y.

A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, “Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO,” Nat. Mater. 4(1), 42–46 (2004).
[CrossRef]

Shan, C. X.

J. S. Liu, C. X. Shan, B. H. Li, Z. Z. Zhang, K. W. Liu, and D. Z. Shen, “MgZnO p-n heterostructure light-emitting devices,” Opt. Lett. 38(12), 2113–2115 (2013).
[CrossRef] [PubMed]

X. Y. Liu, C. X. Shan, S. P. Wang, H. F. Zhao, and D. Z. Shen, “Intense emission from ZnO nanocolumn Schottky diodes,” Nanoscale 5(17), 7746–7749 (2013).
[CrossRef] [PubMed]

J. S. Liu, C. X. Shan, H. Shen, B. H. Li, Z. Z. Zhang, L. Liu, L. G. Zhang, and D. Z. Shen, “ZnO light-emitting devices with a lifetime of 6.8 hours,” Appl. Phys. Lett. 101(1), 011106 (2012).
[CrossRef]

F. Sun, C. X. Shan, B. H. Li, Z. Z. Zhang, D. Z. Shen, Z. Y. Zhang, and D. Fan, “A reproducible route to p-ZnO films and their application in light-emitting devices,” Opt. Lett. 36(4), 499–501 (2011).
[CrossRef] [PubMed]

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-Threshold Laser Realized in Zinc Oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[CrossRef]

Shan, F. K.

F. K. Shan, G. X. Liu, W. J. Lee, and B. C. Shin, “The role of oxygen vacancies in epitaxial-deposited ZnO thin films,” J. Appl. Phys. 101(5), 053106 (2007).
[CrossRef]

Shen, D. Z.

J. S. Liu, C. X. Shan, B. H. Li, Z. Z. Zhang, K. W. Liu, and D. Z. Shen, “MgZnO p-n heterostructure light-emitting devices,” Opt. Lett. 38(12), 2113–2115 (2013).
[CrossRef] [PubMed]

X. Y. Liu, C. X. Shan, S. P. Wang, H. F. Zhao, and D. Z. Shen, “Intense emission from ZnO nanocolumn Schottky diodes,” Nanoscale 5(17), 7746–7749 (2013).
[CrossRef] [PubMed]

J. S. Liu, C. X. Shan, H. Shen, B. H. Li, Z. Z. Zhang, L. Liu, L. G. Zhang, and D. Z. Shen, “ZnO light-emitting devices with a lifetime of 6.8 hours,” Appl. Phys. Lett. 101(1), 011106 (2012).
[CrossRef]

F. Sun, C. X. Shan, B. H. Li, Z. Z. Zhang, D. Z. Shen, Z. Y. Zhang, and D. Fan, “A reproducible route to p-ZnO films and their application in light-emitting devices,” Opt. Lett. 36(4), 499–501 (2011).
[CrossRef] [PubMed]

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-Threshold Laser Realized in Zinc Oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[CrossRef]

S. J. Jiao, Z. Z. Zhang, Y. M. Lu, D. Z. Shen, B. Yao, J. Y. Zhang, B. H. Li, D. X. Zhao, X. W. Fan, and Z. K. Tang, “ZnO p-n junction light-emitting diodes fabricated on sapphire substrates,” Appl. Phys. Lett. 88(3), 031911 (2006).
[CrossRef]

Shen, H.

J. S. Liu, C. X. Shan, H. Shen, B. H. Li, Z. Z. Zhang, L. Liu, L. G. Zhang, and D. Z. Shen, “ZnO light-emitting devices with a lifetime of 6.8 hours,” Appl. Phys. Lett. 101(1), 011106 (2012).
[CrossRef]

Shi, Z. F.

G. T. Du, W. Zhao, G. G. Wu, Z. F. Shi, X. C. Xia, Y. Liu, H. W. Liang, X. Dong, Y. Ma, and B. L. Zhang, “Electrically pumped lasing from p-ZnO/n-GaN heterojunction diodes,” Appl. Phys. Lett. 101(5), 053503 (2012).
[CrossRef]

Shin, B. C.

F. K. Shan, G. X. Liu, W. J. Lee, and B. C. Shin, “The role of oxygen vacancies in epitaxial-deposited ZnO thin films,” J. Appl. Phys. 101(5), 053106 (2007).
[CrossRef]

Sreekanth, K. M.

J. C. Fan, K. M. Sreekanth, Z. Xie, S. L. Chang, and K. V. Rao, “p-Type ZnO materials: Theory, growth, properties and devices,” Prog. Mater. Sci. 58(6), 874–985 (2013).
[CrossRef]

Sumiya, M.

A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, “Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO,” Nat. Mater. 4(1), 42–46 (2004).
[CrossRef]

Sun, F.

Takamizu, D.

K. Nakahara, S. Akasaka, H. Yuji, K. Tamura, T. Fujii, Y. Nishimoto, D. Takamizu, A. Sasaki, T. Tanabe, H. Takasu, H. Amaike, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Nitrogen doped MgxZn1-xO/ZnO single heterostructure ultraviolet light-emitting diodes on ZnO substrates,” Appl. Phys. Lett. 97(1), 013501 (2010).
[CrossRef]

Takasu, H.

K. Nakahara, S. Akasaka, H. Yuji, K. Tamura, T. Fujii, Y. Nishimoto, D. Takamizu, A. Sasaki, T. Tanabe, H. Takasu, H. Amaike, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Nitrogen doped MgxZn1-xO/ZnO single heterostructure ultraviolet light-emitting diodes on ZnO substrates,” Appl. Phys. Lett. 97(1), 013501 (2010).
[CrossRef]

Tamura, K.

K. Nakahara, S. Akasaka, H. Yuji, K. Tamura, T. Fujii, Y. Nishimoto, D. Takamizu, A. Sasaki, T. Tanabe, H. Takasu, H. Amaike, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Nitrogen doped MgxZn1-xO/ZnO single heterostructure ultraviolet light-emitting diodes on ZnO substrates,” Appl. Phys. Lett. 97(1), 013501 (2010).
[CrossRef]

Tan, H. R.

J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 96(20), 201102 (2010).
[CrossRef]

Tanabe, T.

K. Nakahara, S. Akasaka, H. Yuji, K. Tamura, T. Fujii, Y. Nishimoto, D. Takamizu, A. Sasaki, T. Tanabe, H. Takasu, H. Amaike, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Nitrogen doped MgxZn1-xO/ZnO single heterostructure ultraviolet light-emitting diodes on ZnO substrates,” Appl. Phys. Lett. 97(1), 013501 (2010).
[CrossRef]

Tang, Z. K.

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-Threshold Laser Realized in Zinc Oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[CrossRef]

S. J. Jiao, Z. Z. Zhang, Y. M. Lu, D. Z. Shen, B. Yao, J. Y. Zhang, B. H. Li, D. X. Zhao, X. W. Fan, and Z. K. Tang, “ZnO p-n junction light-emitting diodes fabricated on sapphire substrates,” Appl. Phys. Lett. 88(3), 031911 (2006).
[CrossRef]

Tsukazaki, A.

K. Nakahara, S. Akasaka, H. Yuji, K. Tamura, T. Fujii, Y. Nishimoto, D. Takamizu, A. Sasaki, T. Tanabe, H. Takasu, H. Amaike, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Nitrogen doped MgxZn1-xO/ZnO single heterostructure ultraviolet light-emitting diodes on ZnO substrates,” Appl. Phys. Lett. 97(1), 013501 (2010).
[CrossRef]

A. Tsukazaki, M. Kubota, A. Ohtomo, T. Onuma, K. Ohtani, H. Ohno, S. F. Chichibu, and M. Kawasaki, “Blue light-emitting diode based on ZnO,” Jpn. J. Appl. Phys. 44(21), L643–L645 (2005).
[CrossRef]

A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, “Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO,” Nat. Mater. 4(1), 42–46 (2004).
[CrossRef]

Van Nostrand, J. E.

Y. I. Alivov, J. E. Van Nostrand, D. C. Look, M. V. Chukichev, and B. M. Ataev, “Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 83(14), 2943 (2003).
[CrossRef]

Viana, B.

O. Lupan, T. Pauporté, and B. Viana, “Low-voltage UV-electroluminescence from ZnO-nanowire Array/p-GaN light-emitting diodes,” Adv. Mater. 22(30), 3298–3302 (2010).
[CrossRef] [PubMed]

Wang, J. X.

J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 96(20), 201102 (2010).
[CrossRef]

Wang, S. P.

X. Y. Liu, C. X. Shan, S. P. Wang, H. F. Zhao, and D. Z. Shen, “Intense emission from ZnO nanocolumn Schottky diodes,” Nanoscale 5(17), 7746–7749 (2013).
[CrossRef] [PubMed]

White, H. W.

Y. R. Ryu, T. S. Lee, J. A. Lubguban, H. W. White, B. J. Kim, Y. S. Park, and C. J. Youn, “Next generation of oxide photonic devices: ZnO-based ultraviolet light emitting diodes,” Appl. Phys. Lett. 88(24), 241108 (2006).
[CrossRef]

Wowchak, A. M.

J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 96(20), 201102 (2010).
[CrossRef]

Wu, G. G.

G. T. Du, W. Zhao, G. G. Wu, Z. F. Shi, X. C. Xia, Y. Liu, H. W. Liang, X. Dong, Y. Ma, and B. L. Zhang, “Electrically pumped lasing from p-ZnO/n-GaN heterojunction diodes,” Appl. Phys. Lett. 101(5), 053503 (2012).
[CrossRef]

Xia, X. C.

G. T. Du, W. Zhao, G. G. Wu, Z. F. Shi, X. C. Xia, Y. Liu, H. W. Liang, X. Dong, Y. Ma, and B. L. Zhang, “Electrically pumped lasing from p-ZnO/n-GaN heterojunction diodes,” Appl. Phys. Lett. 101(5), 053503 (2012).
[CrossRef]

Xie, Z.

J. C. Fan, K. M. Sreekanth, Z. Xie, S. L. Chang, and K. V. Rao, “p-Type ZnO materials: Theory, growth, properties and devices,” Prog. Mater. Sci. 58(6), 874–985 (2013).
[CrossRef]

Yamamuro, T.

H. Kato, T. Yamamuro, A. Ogawa, C. Kyotani, and M. Sano, “Impact of Mixture Gas Plasma of N2 and O2 as the N Source on ZnO-Based Ultraviolet Light-Emitting Diodes Fabricated by Molecular Beam Epitaxy,” Appl. Phys. Express 4(9), 091105 (2011).
[CrossRef]

Yang, H. Y.

Yang, Z.

S. Chu, J. H. Lim, L. J. Mandalapu, Z. Yang, L. Li, and J. L. Liu, “Sb-doped p-ZnO/Ga-doped n-ZnO homojunction ultraviolet light emitting diodes,” Appl. Phys. Lett. 92(15), 152103 (2008).
[CrossRef]

Yao, B.

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-Threshold Laser Realized in Zinc Oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[CrossRef]

S. J. Jiao, Z. Z. Zhang, Y. M. Lu, D. Z. Shen, B. Yao, J. Y. Zhang, B. H. Li, D. X. Zhao, X. W. Fan, and Z. K. Tang, “ZnO p-n junction light-emitting diodes fabricated on sapphire substrates,” Appl. Phys. Lett. 88(3), 031911 (2006).
[CrossRef]

Yi, G. C.

W. I. Park and G. C. Yi, “Electroluminescence in n-ZnO Nanorod Arrays Vertically Grown on p-GaN,” Adv. Mater. 16(1), 87–90 (2004).
[CrossRef]

Yin, Z. G.

J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 96(20), 201102 (2010).
[CrossRef]

You, J. B.

J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 96(20), 201102 (2010).
[CrossRef]

Youn, C. J.

Y. R. Ryu, T. S. Lee, J. A. Lubguban, H. W. White, B. J. Kim, Y. S. Park, and C. J. Youn, “Next generation of oxide photonic devices: ZnO-based ultraviolet light emitting diodes,” Appl. Phys. Lett. 88(24), 241108 (2006).
[CrossRef]

Yu, S. F.

H. K. Liang, S. F. Yu, and H. Y. Yang, “Edge-emitting ultraviolet n-ZnO:Al/i-ZnO/p-GaN heterojunction light-emitting diode with a rib waveguide,” Opt. Express 18(4), 3687–3692 (2010).
[CrossRef] [PubMed]

C. Yuen, S. F. Yu, S. P. Lau, Rusli, and T. P. Chen, “Fabrication of n-ZnO:Al/p-SiC(4H) heterojunction light-emitting diodes by filtered cathodic vacuum arc technique,” Appl. Phys. Lett. 86(24), 241111 (2005).
[CrossRef]

Yuen, C.

C. Yuen, S. F. Yu, S. P. Lau, Rusli, and T. P. Chen, “Fabrication of n-ZnO:Al/p-SiC(4H) heterojunction light-emitting diodes by filtered cathodic vacuum arc technique,” Appl. Phys. Lett. 86(24), 241111 (2005).
[CrossRef]

Yuji, H.

K. Nakahara, S. Akasaka, H. Yuji, K. Tamura, T. Fujii, Y. Nishimoto, D. Takamizu, A. Sasaki, T. Tanabe, H. Takasu, H. Amaike, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Nitrogen doped MgxZn1-xO/ZnO single heterostructure ultraviolet light-emitting diodes on ZnO substrates,” Appl. Phys. Lett. 97(1), 013501 (2010).
[CrossRef]

Zhang, B. L.

G. T. Du, W. Zhao, G. G. Wu, Z. F. Shi, X. C. Xia, Y. Liu, H. W. Liang, X. Dong, Y. Ma, and B. L. Zhang, “Electrically pumped lasing from p-ZnO/n-GaN heterojunction diodes,” Appl. Phys. Lett. 101(5), 053503 (2012).
[CrossRef]

Zhang, J. Y.

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-Threshold Laser Realized in Zinc Oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[CrossRef]

S. J. Jiao, Z. Z. Zhang, Y. M. Lu, D. Z. Shen, B. Yao, J. Y. Zhang, B. H. Li, D. X. Zhao, X. W. Fan, and Z. K. Tang, “ZnO p-n junction light-emitting diodes fabricated on sapphire substrates,” Appl. Phys. Lett. 88(3), 031911 (2006).
[CrossRef]

Zhang, L. C.

S. L. Li and L. C. Zhang, “Improvement of the electroluminescence performance of ZnO nanorods/p-GaN light emitting diodes with a ZnO films interlayer,” J. Semicond. 34(11), 114010 (2013).
[CrossRef]

Zhang, L. G.

J. S. Liu, C. X. Shan, H. Shen, B. H. Li, Z. Z. Zhang, L. Liu, L. G. Zhang, and D. Z. Shen, “ZnO light-emitting devices with a lifetime of 6.8 hours,” Appl. Phys. Lett. 101(1), 011106 (2012).
[CrossRef]

Zhang, S. G.

J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 96(20), 201102 (2010).
[CrossRef]

Zhang, W. J.

J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 96(20), 201102 (2010).
[CrossRef]

Zhang, X. W.

J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 96(20), 201102 (2010).
[CrossRef]

Zhang, Z. Y.

Zhang, Z. Z.

J. S. Liu, C. X. Shan, B. H. Li, Z. Z. Zhang, K. W. Liu, and D. Z. Shen, “MgZnO p-n heterostructure light-emitting devices,” Opt. Lett. 38(12), 2113–2115 (2013).
[CrossRef] [PubMed]

J. S. Liu, C. X. Shan, H. Shen, B. H. Li, Z. Z. Zhang, L. Liu, L. G. Zhang, and D. Z. Shen, “ZnO light-emitting devices with a lifetime of 6.8 hours,” Appl. Phys. Lett. 101(1), 011106 (2012).
[CrossRef]

F. Sun, C. X. Shan, B. H. Li, Z. Z. Zhang, D. Z. Shen, Z. Y. Zhang, and D. Fan, “A reproducible route to p-ZnO films and their application in light-emitting devices,” Opt. Lett. 36(4), 499–501 (2011).
[CrossRef] [PubMed]

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-Threshold Laser Realized in Zinc Oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[CrossRef]

S. J. Jiao, Z. Z. Zhang, Y. M. Lu, D. Z. Shen, B. Yao, J. Y. Zhang, B. H. Li, D. X. Zhao, X. W. Fan, and Z. K. Tang, “ZnO p-n junction light-emitting diodes fabricated on sapphire substrates,” Appl. Phys. Lett. 88(3), 031911 (2006).
[CrossRef]

Zhao, D. X.

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-Threshold Laser Realized in Zinc Oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[CrossRef]

S. J. Jiao, Z. Z. Zhang, Y. M. Lu, D. Z. Shen, B. Yao, J. Y. Zhang, B. H. Li, D. X. Zhao, X. W. Fan, and Z. K. Tang, “ZnO p-n junction light-emitting diodes fabricated on sapphire substrates,” Appl. Phys. Lett. 88(3), 031911 (2006).
[CrossRef]

Zhao, H. F.

X. Y. Liu, C. X. Shan, S. P. Wang, H. F. Zhao, and D. Z. Shen, “Intense emission from ZnO nanocolumn Schottky diodes,” Nanoscale 5(17), 7746–7749 (2013).
[CrossRef] [PubMed]

Zhao, W.

G. T. Du, W. Zhao, G. G. Wu, Z. F. Shi, X. C. Xia, Y. Liu, H. W. Liang, X. Dong, Y. Ma, and B. L. Zhang, “Electrically pumped lasing from p-ZnO/n-GaN heterojunction diodes,” Appl. Phys. Lett. 101(5), 053503 (2012).
[CrossRef]

Zhu, H.

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-Threshold Laser Realized in Zinc Oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[CrossRef]

Adv. Mater.

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Appl. Phys. Express

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Appl. Phys. Lett.

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S. L. Li and L. C. Zhang, “Improvement of the electroluminescence performance of ZnO nanorods/p-GaN light emitting diodes with a ZnO films interlayer,” J. Semicond. 34(11), 114010 (2013).
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Figures (7)

Fig. 1
Fig. 1

(a) Schematic diagram of the n-ZnO/p-ZnO homojunction structure, and the size of the device has been marked in the diagram; (b) I– V curve of the p-n junction, and the inset shows the I– V curves of the Ni/Au contact on the p-ZnO layer and the In contact on the n-ZnO layer.

Fig. 2
Fig. 2

Room temperature EL spectra of the n-ZnO/p-ZnO homojunction under different injection current, and the inset shows the dependence of the output power of the p-n junction on the injection current.

Fig. 3
Fig. 3

(a) Room temperature EL spectra of the p-GaN fastened ZnO p-n junctions via direct contact method under different injection current, and the inset shows the dependence of the output power on the injection current; (b) Room temperature PL spectrum of the p-GaN layers; (c) A typical emission image of the p-GaN coated ZnO p-n junction under an injection current of 20 mA.

Fig. 4
Fig. 4

(a) Schematic diagram of the n-ZnO/p-ZnO homojunction grown on p-GaN hole-injection layer, and the size of the device has been marked in the diagram. (b) I– V curve of the structure, and the inset shows the I– V curves of the Ni/Au contact on the p-GaN layer and the In contact on the n-ZnO layer.

Fig. 5
Fig. 5

(a) Room temperature EL spectra of the p-n junction grown on p-GaN hole-injection layer at different injection current, and the inset shows the dependence of the output power on the injection current; (b) A typical emission image of the structure under an injection currents of 20 mA.

Fig. 6
Fig. 6

(a) θ-2θ XRD pattern of the ZnO films grown on sapphire substrate (Bottom) and p-GaN layer (Top) in the same growth process. (b) X-ray rocking curves for the ZnO films grown on sapphire substrate and the p-GaN hole-injection layer.

Fig. 7
Fig. 7

Schematic bandgap diagram of the n-ZnO/p-ZnO homojunction deposited on the p-GaN hole-injection layer.

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