Abstract

Chemical vapor deposition (CVD) method is considered to be an efficient way to prepare Van der Waals heterostructure. However, accurately and hurtlessly identifying the layers number of MoS2 in the heterostructure is still a challenge. Here, we calculated the expected contrast between MoS2/graphene heterostructure and underlying SiO2/Si substrate by using a Fresnel law based model. And we indicated that contrast at blue and green incident light is ideal for visibility and layer number detecting. Our measured value showed good agreement with calculated ones. And Raman spectrum helped to confirm our speculation.

© 2014 Optical Society of America

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References

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  4. G. H. Lee, Y. J. Yu, X. Cui, N. Petrone, C. H. Lee, M. S. Choi, D. Y. Lee, C. Lee, W. J. Yoo, K. Watanabe, T. Taniguchi, C. Nuckolls, P. Kim, and J. Hone, “Flexible and transparent Mos2 field-effect transistors on hexagonal boron nitride-graphene heterostructures,” ACS Nano 7(9), 7931–7936 (2013).
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2013 (4)

A. Castellanos-Gomez, E. Navarro-Moratalla, G. Mokry, J. Quereda, E. Pinilla-Cienfuegos, N. Agrait, H. S. J. van der Zant, E. Coronado, G. A. Steele, and G. Rubio-Bollinger, “Fast and reliable identification of atomically thin layers of TaSe2 crystals,” Nano Res. 6(3), 191–199 (2013).
[Crossref]

G. H. Lee, Y. J. Yu, X. Cui, N. Petrone, C. H. Lee, M. S. Choi, D. Y. Lee, C. Lee, W. J. Yoo, K. Watanabe, T. Taniguchi, C. Nuckolls, P. Kim, and J. Hone, “Flexible and transparent Mos2 field-effect transistors on hexagonal boron nitride-graphene heterostructures,” ACS Nano 7(9), 7931–7936 (2013).
[Crossref] [PubMed]

A. K. Geim and I. V. Grigorieva, “Van der Waals heterostructures,” Nature 499(7459), 419–425 (2013).
[Crossref] [PubMed]

P. Tonndorf, R. Schmidt, P. Böttger, X. Zhang, J. Börner, A. Liebig, M. Albrecht, C. Kloc, O. Gordan, D. R. T. Zahn, S. Michaelis de Vasconcellos, and R. Bratschitsch, “Photoluminescence emission and Raman response of monolayer MoS₂, MoSe₂, and WSe₂,” Opt. Express 21(4), 4908–4916 (2013).
[Crossref] [PubMed]

2012 (3)

Y. M. Shi, W. Zhou, A. Y. Lu, W. J. Fang, Y. H. Lee, A. L. Hsu, S. M. Kim, K. K. Kim, H. Y. Yang, L. J. Li, J. C. Idrobo, and J. Kong, “van der Waals epitaxy of MoS₂ layers using graphene as growth templates,” Nano Lett. 12(6), 2784–2791 (2012).
[Crossref] [PubMed]

R. S. Yan, B. Sensale-Rodriguez, L. Liu, D. Jena, and H. G. Xing, “A new class of electrically tunable metamaterial terahertz modulators,” Opt. Express 20(27), 28664–28671 (2012).
[Crossref] [PubMed]

Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7(11), 699–712 (2012).
[Crossref] [PubMed]

2011 (2)

G. Eda, H. Yamaguchi, D. Voiry, T. Fujita, M. W. Chen, and M. Chhowalla, “Photoluminescence from chemically exfoliated MoS2.,” Nano Lett. 11(12), 5111–5116 (2011).
[Crossref] [PubMed]

M. M. Benameur, B. Radisavljevic, J. S. Héron, S. Sahoo, H. Berger, and A. Kis, “Visibility of dichalcogenide nanolayers,” Nanotechnology 22(12), 125706 (2011).
[Crossref] [PubMed]

2010 (1)

A. Castellanos-Gomez, N. Agrait, and G. Rubio-Bollinger, “Optical identification of atomically thin dichalcogenide crystals,” Appl. Phys. Lett. 96(21), 213116 (2010).
[Crossref]

2007 (2)

P. Blake, E. W. Hill, A. H. Castro Neto, K. S. Novoselov, D. Jiang, R. Yang, T. J. Booth, and A. K. Geim, “Making graphene visible,” Appl. Phys. Lett. 91(6), 063124 (2007).
[Crossref]

A. K. Geim and K. S. Novoselov, “The rise of graphene,” Nat. Mater. 6(3), 183–191 (2007).
[Crossref] [PubMed]

1979 (1)

R. A. Beal and P. H. Hughes, “Kramers-Kronig analysis of the reflectivity spectra of 2H-MoS2, 2H-MoSe2 and 2H-MoTe2,” J. Phys. C Solid State Phys. 12(5), 881–890 (1979).

1976 (1)

R. A. Beal, P. H. Hughes, and Y. W. Liang, “Kramers-Kronig analysis of the reflectivity spectra of 3R-WS2 and 2H-WSe2,” J. Phys. C Solid State Phys. 9, 2449–2457 (1976).

1975 (1)

A. R. Beal, H. P. Hughes, and W. Y. Liang, “The reflectivity spectra of some group VA transition metal dichalcogenides,” J. Phys. C Solid State Phys. 8(24), 4236–4248 (1975).
[Crossref]

Agrait, N.

A. Castellanos-Gomez, E. Navarro-Moratalla, G. Mokry, J. Quereda, E. Pinilla-Cienfuegos, N. Agrait, H. S. J. van der Zant, E. Coronado, G. A. Steele, and G. Rubio-Bollinger, “Fast and reliable identification of atomically thin layers of TaSe2 crystals,” Nano Res. 6(3), 191–199 (2013).
[Crossref]

A. Castellanos-Gomez, N. Agrait, and G. Rubio-Bollinger, “Optical identification of atomically thin dichalcogenide crystals,” Appl. Phys. Lett. 96(21), 213116 (2010).
[Crossref]

Albrecht, M.

Beal, A. R.

A. R. Beal, H. P. Hughes, and W. Y. Liang, “The reflectivity spectra of some group VA transition metal dichalcogenides,” J. Phys. C Solid State Phys. 8(24), 4236–4248 (1975).
[Crossref]

Beal, R. A.

R. A. Beal and P. H. Hughes, “Kramers-Kronig analysis of the reflectivity spectra of 2H-MoS2, 2H-MoSe2 and 2H-MoTe2,” J. Phys. C Solid State Phys. 12(5), 881–890 (1979).

R. A. Beal, P. H. Hughes, and Y. W. Liang, “Kramers-Kronig analysis of the reflectivity spectra of 3R-WS2 and 2H-WSe2,” J. Phys. C Solid State Phys. 9, 2449–2457 (1976).

Benameur, M. M.

M. M. Benameur, B. Radisavljevic, J. S. Héron, S. Sahoo, H. Berger, and A. Kis, “Visibility of dichalcogenide nanolayers,” Nanotechnology 22(12), 125706 (2011).
[Crossref] [PubMed]

Berger, H.

M. M. Benameur, B. Radisavljevic, J. S. Héron, S. Sahoo, H. Berger, and A. Kis, “Visibility of dichalcogenide nanolayers,” Nanotechnology 22(12), 125706 (2011).
[Crossref] [PubMed]

Blake, P.

P. Blake, E. W. Hill, A. H. Castro Neto, K. S. Novoselov, D. Jiang, R. Yang, T. J. Booth, and A. K. Geim, “Making graphene visible,” Appl. Phys. Lett. 91(6), 063124 (2007).
[Crossref]

Booth, T. J.

P. Blake, E. W. Hill, A. H. Castro Neto, K. S. Novoselov, D. Jiang, R. Yang, T. J. Booth, and A. K. Geim, “Making graphene visible,” Appl. Phys. Lett. 91(6), 063124 (2007).
[Crossref]

Börner, J.

Böttger, P.

Bratschitsch, R.

Castellanos-Gomez, A.

A. Castellanos-Gomez, E. Navarro-Moratalla, G. Mokry, J. Quereda, E. Pinilla-Cienfuegos, N. Agrait, H. S. J. van der Zant, E. Coronado, G. A. Steele, and G. Rubio-Bollinger, “Fast and reliable identification of atomically thin layers of TaSe2 crystals,” Nano Res. 6(3), 191–199 (2013).
[Crossref]

A. Castellanos-Gomez, N. Agrait, and G. Rubio-Bollinger, “Optical identification of atomically thin dichalcogenide crystals,” Appl. Phys. Lett. 96(21), 213116 (2010).
[Crossref]

Castro Neto, A. H.

P. Blake, E. W. Hill, A. H. Castro Neto, K. S. Novoselov, D. Jiang, R. Yang, T. J. Booth, and A. K. Geim, “Making graphene visible,” Appl. Phys. Lett. 91(6), 063124 (2007).
[Crossref]

Chen, M. W.

G. Eda, H. Yamaguchi, D. Voiry, T. Fujita, M. W. Chen, and M. Chhowalla, “Photoluminescence from chemically exfoliated MoS2.,” Nano Lett. 11(12), 5111–5116 (2011).
[Crossref] [PubMed]

Chhowalla, M.

G. Eda, H. Yamaguchi, D. Voiry, T. Fujita, M. W. Chen, and M. Chhowalla, “Photoluminescence from chemically exfoliated MoS2.,” Nano Lett. 11(12), 5111–5116 (2011).
[Crossref] [PubMed]

Choi, M. S.

G. H. Lee, Y. J. Yu, X. Cui, N. Petrone, C. H. Lee, M. S. Choi, D. Y. Lee, C. Lee, W. J. Yoo, K. Watanabe, T. Taniguchi, C. Nuckolls, P. Kim, and J. Hone, “Flexible and transparent Mos2 field-effect transistors on hexagonal boron nitride-graphene heterostructures,” ACS Nano 7(9), 7931–7936 (2013).
[Crossref] [PubMed]

Coleman, J. N.

Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7(11), 699–712 (2012).
[Crossref] [PubMed]

Coronado, E.

A. Castellanos-Gomez, E. Navarro-Moratalla, G. Mokry, J. Quereda, E. Pinilla-Cienfuegos, N. Agrait, H. S. J. van der Zant, E. Coronado, G. A. Steele, and G. Rubio-Bollinger, “Fast and reliable identification of atomically thin layers of TaSe2 crystals,” Nano Res. 6(3), 191–199 (2013).
[Crossref]

Cui, X.

G. H. Lee, Y. J. Yu, X. Cui, N. Petrone, C. H. Lee, M. S. Choi, D. Y. Lee, C. Lee, W. J. Yoo, K. Watanabe, T. Taniguchi, C. Nuckolls, P. Kim, and J. Hone, “Flexible and transparent Mos2 field-effect transistors on hexagonal boron nitride-graphene heterostructures,” ACS Nano 7(9), 7931–7936 (2013).
[Crossref] [PubMed]

Eda, G.

G. Eda, H. Yamaguchi, D. Voiry, T. Fujita, M. W. Chen, and M. Chhowalla, “Photoluminescence from chemically exfoliated MoS2.,” Nano Lett. 11(12), 5111–5116 (2011).
[Crossref] [PubMed]

Fang, W. J.

Y. M. Shi, W. Zhou, A. Y. Lu, W. J. Fang, Y. H. Lee, A. L. Hsu, S. M. Kim, K. K. Kim, H. Y. Yang, L. J. Li, J. C. Idrobo, and J. Kong, “van der Waals epitaxy of MoS₂ layers using graphene as growth templates,” Nano Lett. 12(6), 2784–2791 (2012).
[Crossref] [PubMed]

Fujita, T.

G. Eda, H. Yamaguchi, D. Voiry, T. Fujita, M. W. Chen, and M. Chhowalla, “Photoluminescence from chemically exfoliated MoS2.,” Nano Lett. 11(12), 5111–5116 (2011).
[Crossref] [PubMed]

Geim, A. K.

A. K. Geim and I. V. Grigorieva, “Van der Waals heterostructures,” Nature 499(7459), 419–425 (2013).
[Crossref] [PubMed]

P. Blake, E. W. Hill, A. H. Castro Neto, K. S. Novoselov, D. Jiang, R. Yang, T. J. Booth, and A. K. Geim, “Making graphene visible,” Appl. Phys. Lett. 91(6), 063124 (2007).
[Crossref]

A. K. Geim and K. S. Novoselov, “The rise of graphene,” Nat. Mater. 6(3), 183–191 (2007).
[Crossref] [PubMed]

Gordan, O.

Grigorieva, I. V.

A. K. Geim and I. V. Grigorieva, “Van der Waals heterostructures,” Nature 499(7459), 419–425 (2013).
[Crossref] [PubMed]

Héron, J. S.

M. M. Benameur, B. Radisavljevic, J. S. Héron, S. Sahoo, H. Berger, and A. Kis, “Visibility of dichalcogenide nanolayers,” Nanotechnology 22(12), 125706 (2011).
[Crossref] [PubMed]

Hill, E. W.

P. Blake, E. W. Hill, A. H. Castro Neto, K. S. Novoselov, D. Jiang, R. Yang, T. J. Booth, and A. K. Geim, “Making graphene visible,” Appl. Phys. Lett. 91(6), 063124 (2007).
[Crossref]

Hone, J.

G. H. Lee, Y. J. Yu, X. Cui, N. Petrone, C. H. Lee, M. S. Choi, D. Y. Lee, C. Lee, W. J. Yoo, K. Watanabe, T. Taniguchi, C. Nuckolls, P. Kim, and J. Hone, “Flexible and transparent Mos2 field-effect transistors on hexagonal boron nitride-graphene heterostructures,” ACS Nano 7(9), 7931–7936 (2013).
[Crossref] [PubMed]

Hsu, A. L.

Y. M. Shi, W. Zhou, A. Y. Lu, W. J. Fang, Y. H. Lee, A. L. Hsu, S. M. Kim, K. K. Kim, H. Y. Yang, L. J. Li, J. C. Idrobo, and J. Kong, “van der Waals epitaxy of MoS₂ layers using graphene as growth templates,” Nano Lett. 12(6), 2784–2791 (2012).
[Crossref] [PubMed]

Hughes, H. P.

A. R. Beal, H. P. Hughes, and W. Y. Liang, “The reflectivity spectra of some group VA transition metal dichalcogenides,” J. Phys. C Solid State Phys. 8(24), 4236–4248 (1975).
[Crossref]

Hughes, P. H.

R. A. Beal and P. H. Hughes, “Kramers-Kronig analysis of the reflectivity spectra of 2H-MoS2, 2H-MoSe2 and 2H-MoTe2,” J. Phys. C Solid State Phys. 12(5), 881–890 (1979).

R. A. Beal, P. H. Hughes, and Y. W. Liang, “Kramers-Kronig analysis of the reflectivity spectra of 3R-WS2 and 2H-WSe2,” J. Phys. C Solid State Phys. 9, 2449–2457 (1976).

Idrobo, J. C.

Y. M. Shi, W. Zhou, A. Y. Lu, W. J. Fang, Y. H. Lee, A. L. Hsu, S. M. Kim, K. K. Kim, H. Y. Yang, L. J. Li, J. C. Idrobo, and J. Kong, “van der Waals epitaxy of MoS₂ layers using graphene as growth templates,” Nano Lett. 12(6), 2784–2791 (2012).
[Crossref] [PubMed]

Jena, D.

Jiang, D.

P. Blake, E. W. Hill, A. H. Castro Neto, K. S. Novoselov, D. Jiang, R. Yang, T. J. Booth, and A. K. Geim, “Making graphene visible,” Appl. Phys. Lett. 91(6), 063124 (2007).
[Crossref]

Kalantar-Zadeh, K.

Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7(11), 699–712 (2012).
[Crossref] [PubMed]

Kim, K. K.

Y. M. Shi, W. Zhou, A. Y. Lu, W. J. Fang, Y. H. Lee, A. L. Hsu, S. M. Kim, K. K. Kim, H. Y. Yang, L. J. Li, J. C. Idrobo, and J. Kong, “van der Waals epitaxy of MoS₂ layers using graphene as growth templates,” Nano Lett. 12(6), 2784–2791 (2012).
[Crossref] [PubMed]

Kim, P.

G. H. Lee, Y. J. Yu, X. Cui, N. Petrone, C. H. Lee, M. S. Choi, D. Y. Lee, C. Lee, W. J. Yoo, K. Watanabe, T. Taniguchi, C. Nuckolls, P. Kim, and J. Hone, “Flexible and transparent Mos2 field-effect transistors on hexagonal boron nitride-graphene heterostructures,” ACS Nano 7(9), 7931–7936 (2013).
[Crossref] [PubMed]

Kim, S. M.

Y. M. Shi, W. Zhou, A. Y. Lu, W. J. Fang, Y. H. Lee, A. L. Hsu, S. M. Kim, K. K. Kim, H. Y. Yang, L. J. Li, J. C. Idrobo, and J. Kong, “van der Waals epitaxy of MoS₂ layers using graphene as growth templates,” Nano Lett. 12(6), 2784–2791 (2012).
[Crossref] [PubMed]

Kis, A.

Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7(11), 699–712 (2012).
[Crossref] [PubMed]

M. M. Benameur, B. Radisavljevic, J. S. Héron, S. Sahoo, H. Berger, and A. Kis, “Visibility of dichalcogenide nanolayers,” Nanotechnology 22(12), 125706 (2011).
[Crossref] [PubMed]

Kloc, C.

Kong, J.

Y. M. Shi, W. Zhou, A. Y. Lu, W. J. Fang, Y. H. Lee, A. L. Hsu, S. M. Kim, K. K. Kim, H. Y. Yang, L. J. Li, J. C. Idrobo, and J. Kong, “van der Waals epitaxy of MoS₂ layers using graphene as growth templates,” Nano Lett. 12(6), 2784–2791 (2012).
[Crossref] [PubMed]

Lee, C.

G. H. Lee, Y. J. Yu, X. Cui, N. Petrone, C. H. Lee, M. S. Choi, D. Y. Lee, C. Lee, W. J. Yoo, K. Watanabe, T. Taniguchi, C. Nuckolls, P. Kim, and J. Hone, “Flexible and transparent Mos2 field-effect transistors on hexagonal boron nitride-graphene heterostructures,” ACS Nano 7(9), 7931–7936 (2013).
[Crossref] [PubMed]

Lee, C. H.

G. H. Lee, Y. J. Yu, X. Cui, N. Petrone, C. H. Lee, M. S. Choi, D. Y. Lee, C. Lee, W. J. Yoo, K. Watanabe, T. Taniguchi, C. Nuckolls, P. Kim, and J. Hone, “Flexible and transparent Mos2 field-effect transistors on hexagonal boron nitride-graphene heterostructures,” ACS Nano 7(9), 7931–7936 (2013).
[Crossref] [PubMed]

Lee, D. Y.

G. H. Lee, Y. J. Yu, X. Cui, N. Petrone, C. H. Lee, M. S. Choi, D. Y. Lee, C. Lee, W. J. Yoo, K. Watanabe, T. Taniguchi, C. Nuckolls, P. Kim, and J. Hone, “Flexible and transparent Mos2 field-effect transistors on hexagonal boron nitride-graphene heterostructures,” ACS Nano 7(9), 7931–7936 (2013).
[Crossref] [PubMed]

Lee, G. H.

G. H. Lee, Y. J. Yu, X. Cui, N. Petrone, C. H. Lee, M. S. Choi, D. Y. Lee, C. Lee, W. J. Yoo, K. Watanabe, T. Taniguchi, C. Nuckolls, P. Kim, and J. Hone, “Flexible and transparent Mos2 field-effect transistors on hexagonal boron nitride-graphene heterostructures,” ACS Nano 7(9), 7931–7936 (2013).
[Crossref] [PubMed]

Lee, Y. H.

Y. M. Shi, W. Zhou, A. Y. Lu, W. J. Fang, Y. H. Lee, A. L. Hsu, S. M. Kim, K. K. Kim, H. Y. Yang, L. J. Li, J. C. Idrobo, and J. Kong, “van der Waals epitaxy of MoS₂ layers using graphene as growth templates,” Nano Lett. 12(6), 2784–2791 (2012).
[Crossref] [PubMed]

Li, L. J.

Y. M. Shi, W. Zhou, A. Y. Lu, W. J. Fang, Y. H. Lee, A. L. Hsu, S. M. Kim, K. K. Kim, H. Y. Yang, L. J. Li, J. C. Idrobo, and J. Kong, “van der Waals epitaxy of MoS₂ layers using graphene as growth templates,” Nano Lett. 12(6), 2784–2791 (2012).
[Crossref] [PubMed]

Liang, W. Y.

A. R. Beal, H. P. Hughes, and W. Y. Liang, “The reflectivity spectra of some group VA transition metal dichalcogenides,” J. Phys. C Solid State Phys. 8(24), 4236–4248 (1975).
[Crossref]

Liang, Y. W.

R. A. Beal, P. H. Hughes, and Y. W. Liang, “Kramers-Kronig analysis of the reflectivity spectra of 3R-WS2 and 2H-WSe2,” J. Phys. C Solid State Phys. 9, 2449–2457 (1976).

Liebig, A.

Liu, L.

Lu, A. Y.

Y. M. Shi, W. Zhou, A. Y. Lu, W. J. Fang, Y. H. Lee, A. L. Hsu, S. M. Kim, K. K. Kim, H. Y. Yang, L. J. Li, J. C. Idrobo, and J. Kong, “van der Waals epitaxy of MoS₂ layers using graphene as growth templates,” Nano Lett. 12(6), 2784–2791 (2012).
[Crossref] [PubMed]

Michaelis de Vasconcellos, S.

Mokry, G.

A. Castellanos-Gomez, E. Navarro-Moratalla, G. Mokry, J. Quereda, E. Pinilla-Cienfuegos, N. Agrait, H. S. J. van der Zant, E. Coronado, G. A. Steele, and G. Rubio-Bollinger, “Fast and reliable identification of atomically thin layers of TaSe2 crystals,” Nano Res. 6(3), 191–199 (2013).
[Crossref]

Navarro-Moratalla, E.

A. Castellanos-Gomez, E. Navarro-Moratalla, G. Mokry, J. Quereda, E. Pinilla-Cienfuegos, N. Agrait, H. S. J. van der Zant, E. Coronado, G. A. Steele, and G. Rubio-Bollinger, “Fast and reliable identification of atomically thin layers of TaSe2 crystals,” Nano Res. 6(3), 191–199 (2013).
[Crossref]

Novoselov, K. S.

P. Blake, E. W. Hill, A. H. Castro Neto, K. S. Novoselov, D. Jiang, R. Yang, T. J. Booth, and A. K. Geim, “Making graphene visible,” Appl. Phys. Lett. 91(6), 063124 (2007).
[Crossref]

A. K. Geim and K. S. Novoselov, “The rise of graphene,” Nat. Mater. 6(3), 183–191 (2007).
[Crossref] [PubMed]

Nuckolls, C.

G. H. Lee, Y. J. Yu, X. Cui, N. Petrone, C. H. Lee, M. S. Choi, D. Y. Lee, C. Lee, W. J. Yoo, K. Watanabe, T. Taniguchi, C. Nuckolls, P. Kim, and J. Hone, “Flexible and transparent Mos2 field-effect transistors on hexagonal boron nitride-graphene heterostructures,” ACS Nano 7(9), 7931–7936 (2013).
[Crossref] [PubMed]

Petrone, N.

G. H. Lee, Y. J. Yu, X. Cui, N. Petrone, C. H. Lee, M. S. Choi, D. Y. Lee, C. Lee, W. J. Yoo, K. Watanabe, T. Taniguchi, C. Nuckolls, P. Kim, and J. Hone, “Flexible and transparent Mos2 field-effect transistors on hexagonal boron nitride-graphene heterostructures,” ACS Nano 7(9), 7931–7936 (2013).
[Crossref] [PubMed]

Pinilla-Cienfuegos, E.

A. Castellanos-Gomez, E. Navarro-Moratalla, G. Mokry, J. Quereda, E. Pinilla-Cienfuegos, N. Agrait, H. S. J. van der Zant, E. Coronado, G. A. Steele, and G. Rubio-Bollinger, “Fast and reliable identification of atomically thin layers of TaSe2 crystals,” Nano Res. 6(3), 191–199 (2013).
[Crossref]

Quereda, J.

A. Castellanos-Gomez, E. Navarro-Moratalla, G. Mokry, J. Quereda, E. Pinilla-Cienfuegos, N. Agrait, H. S. J. van der Zant, E. Coronado, G. A. Steele, and G. Rubio-Bollinger, “Fast and reliable identification of atomically thin layers of TaSe2 crystals,” Nano Res. 6(3), 191–199 (2013).
[Crossref]

Radisavljevic, B.

M. M. Benameur, B. Radisavljevic, J. S. Héron, S. Sahoo, H. Berger, and A. Kis, “Visibility of dichalcogenide nanolayers,” Nanotechnology 22(12), 125706 (2011).
[Crossref] [PubMed]

Rubio-Bollinger, G.

A. Castellanos-Gomez, E. Navarro-Moratalla, G. Mokry, J. Quereda, E. Pinilla-Cienfuegos, N. Agrait, H. S. J. van der Zant, E. Coronado, G. A. Steele, and G. Rubio-Bollinger, “Fast and reliable identification of atomically thin layers of TaSe2 crystals,” Nano Res. 6(3), 191–199 (2013).
[Crossref]

A. Castellanos-Gomez, N. Agrait, and G. Rubio-Bollinger, “Optical identification of atomically thin dichalcogenide crystals,” Appl. Phys. Lett. 96(21), 213116 (2010).
[Crossref]

Sahoo, S.

M. M. Benameur, B. Radisavljevic, J. S. Héron, S. Sahoo, H. Berger, and A. Kis, “Visibility of dichalcogenide nanolayers,” Nanotechnology 22(12), 125706 (2011).
[Crossref] [PubMed]

Schmidt, R.

Sensale-Rodriguez, B.

Shi, Y. M.

Y. M. Shi, W. Zhou, A. Y. Lu, W. J. Fang, Y. H. Lee, A. L. Hsu, S. M. Kim, K. K. Kim, H. Y. Yang, L. J. Li, J. C. Idrobo, and J. Kong, “van der Waals epitaxy of MoS₂ layers using graphene as growth templates,” Nano Lett. 12(6), 2784–2791 (2012).
[Crossref] [PubMed]

Steele, G. A.

A. Castellanos-Gomez, E. Navarro-Moratalla, G. Mokry, J. Quereda, E. Pinilla-Cienfuegos, N. Agrait, H. S. J. van der Zant, E. Coronado, G. A. Steele, and G. Rubio-Bollinger, “Fast and reliable identification of atomically thin layers of TaSe2 crystals,” Nano Res. 6(3), 191–199 (2013).
[Crossref]

Strano, M. S.

Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7(11), 699–712 (2012).
[Crossref] [PubMed]

Taniguchi, T.

G. H. Lee, Y. J. Yu, X. Cui, N. Petrone, C. H. Lee, M. S. Choi, D. Y. Lee, C. Lee, W. J. Yoo, K. Watanabe, T. Taniguchi, C. Nuckolls, P. Kim, and J. Hone, “Flexible and transparent Mos2 field-effect transistors on hexagonal boron nitride-graphene heterostructures,” ACS Nano 7(9), 7931–7936 (2013).
[Crossref] [PubMed]

Tonndorf, P.

van der Zant, H. S. J.

A. Castellanos-Gomez, E. Navarro-Moratalla, G. Mokry, J. Quereda, E. Pinilla-Cienfuegos, N. Agrait, H. S. J. van der Zant, E. Coronado, G. A. Steele, and G. Rubio-Bollinger, “Fast and reliable identification of atomically thin layers of TaSe2 crystals,” Nano Res. 6(3), 191–199 (2013).
[Crossref]

Voiry, D.

G. Eda, H. Yamaguchi, D. Voiry, T. Fujita, M. W. Chen, and M. Chhowalla, “Photoluminescence from chemically exfoliated MoS2.,” Nano Lett. 11(12), 5111–5116 (2011).
[Crossref] [PubMed]

Wang, Q. H.

Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7(11), 699–712 (2012).
[Crossref] [PubMed]

Watanabe, K.

G. H. Lee, Y. J. Yu, X. Cui, N. Petrone, C. H. Lee, M. S. Choi, D. Y. Lee, C. Lee, W. J. Yoo, K. Watanabe, T. Taniguchi, C. Nuckolls, P. Kim, and J. Hone, “Flexible and transparent Mos2 field-effect transistors on hexagonal boron nitride-graphene heterostructures,” ACS Nano 7(9), 7931–7936 (2013).
[Crossref] [PubMed]

Xing, H. G.

Yamaguchi, H.

G. Eda, H. Yamaguchi, D. Voiry, T. Fujita, M. W. Chen, and M. Chhowalla, “Photoluminescence from chemically exfoliated MoS2.,” Nano Lett. 11(12), 5111–5116 (2011).
[Crossref] [PubMed]

Yan, R. S.

Yang, H. Y.

Y. M. Shi, W. Zhou, A. Y. Lu, W. J. Fang, Y. H. Lee, A. L. Hsu, S. M. Kim, K. K. Kim, H. Y. Yang, L. J. Li, J. C. Idrobo, and J. Kong, “van der Waals epitaxy of MoS₂ layers using graphene as growth templates,” Nano Lett. 12(6), 2784–2791 (2012).
[Crossref] [PubMed]

Yang, R.

P. Blake, E. W. Hill, A. H. Castro Neto, K. S. Novoselov, D. Jiang, R. Yang, T. J. Booth, and A. K. Geim, “Making graphene visible,” Appl. Phys. Lett. 91(6), 063124 (2007).
[Crossref]

Yoo, W. J.

G. H. Lee, Y. J. Yu, X. Cui, N. Petrone, C. H. Lee, M. S. Choi, D. Y. Lee, C. Lee, W. J. Yoo, K. Watanabe, T. Taniguchi, C. Nuckolls, P. Kim, and J. Hone, “Flexible and transparent Mos2 field-effect transistors on hexagonal boron nitride-graphene heterostructures,” ACS Nano 7(9), 7931–7936 (2013).
[Crossref] [PubMed]

Yu, Y. J.

G. H. Lee, Y. J. Yu, X. Cui, N. Petrone, C. H. Lee, M. S. Choi, D. Y. Lee, C. Lee, W. J. Yoo, K. Watanabe, T. Taniguchi, C. Nuckolls, P. Kim, and J. Hone, “Flexible and transparent Mos2 field-effect transistors on hexagonal boron nitride-graphene heterostructures,” ACS Nano 7(9), 7931–7936 (2013).
[Crossref] [PubMed]

Zahn, D. R. T.

Zhang, X.

Zhou, W.

Y. M. Shi, W. Zhou, A. Y. Lu, W. J. Fang, Y. H. Lee, A. L. Hsu, S. M. Kim, K. K. Kim, H. Y. Yang, L. J. Li, J. C. Idrobo, and J. Kong, “van der Waals epitaxy of MoS₂ layers using graphene as growth templates,” Nano Lett. 12(6), 2784–2791 (2012).
[Crossref] [PubMed]

ACS Nano (1)

G. H. Lee, Y. J. Yu, X. Cui, N. Petrone, C. H. Lee, M. S. Choi, D. Y. Lee, C. Lee, W. J. Yoo, K. Watanabe, T. Taniguchi, C. Nuckolls, P. Kim, and J. Hone, “Flexible and transparent Mos2 field-effect transistors on hexagonal boron nitride-graphene heterostructures,” ACS Nano 7(9), 7931–7936 (2013).
[Crossref] [PubMed]

Appl. Phys. Lett. (2)

P. Blake, E. W. Hill, A. H. Castro Neto, K. S. Novoselov, D. Jiang, R. Yang, T. J. Booth, and A. K. Geim, “Making graphene visible,” Appl. Phys. Lett. 91(6), 063124 (2007).
[Crossref]

A. Castellanos-Gomez, N. Agrait, and G. Rubio-Bollinger, “Optical identification of atomically thin dichalcogenide crystals,” Appl. Phys. Lett. 96(21), 213116 (2010).
[Crossref]

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A. R. Beal, H. P. Hughes, and W. Y. Liang, “The reflectivity spectra of some group VA transition metal dichalcogenides,” J. Phys. C Solid State Phys. 8(24), 4236–4248 (1975).
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R. A. Beal, P. H. Hughes, and Y. W. Liang, “Kramers-Kronig analysis of the reflectivity spectra of 3R-WS2 and 2H-WSe2,” J. Phys. C Solid State Phys. 9, 2449–2457 (1976).

R. A. Beal and P. H. Hughes, “Kramers-Kronig analysis of the reflectivity spectra of 2H-MoS2, 2H-MoSe2 and 2H-MoTe2,” J. Phys. C Solid State Phys. 12(5), 881–890 (1979).

Nano Lett. (2)

Y. M. Shi, W. Zhou, A. Y. Lu, W. J. Fang, Y. H. Lee, A. L. Hsu, S. M. Kim, K. K. Kim, H. Y. Yang, L. J. Li, J. C. Idrobo, and J. Kong, “van der Waals epitaxy of MoS₂ layers using graphene as growth templates,” Nano Lett. 12(6), 2784–2791 (2012).
[Crossref] [PubMed]

G. Eda, H. Yamaguchi, D. Voiry, T. Fujita, M. W. Chen, and M. Chhowalla, “Photoluminescence from chemically exfoliated MoS2.,” Nano Lett. 11(12), 5111–5116 (2011).
[Crossref] [PubMed]

Nano Res. (1)

A. Castellanos-Gomez, E. Navarro-Moratalla, G. Mokry, J. Quereda, E. Pinilla-Cienfuegos, N. Agrait, H. S. J. van der Zant, E. Coronado, G. A. Steele, and G. Rubio-Bollinger, “Fast and reliable identification of atomically thin layers of TaSe2 crystals,” Nano Res. 6(3), 191–199 (2013).
[Crossref]

Nanotechnology (1)

M. M. Benameur, B. Radisavljevic, J. S. Héron, S. Sahoo, H. Berger, and A. Kis, “Visibility of dichalcogenide nanolayers,” Nanotechnology 22(12), 125706 (2011).
[Crossref] [PubMed]

Nat. Mater. (1)

A. K. Geim and K. S. Novoselov, “The rise of graphene,” Nat. Mater. 6(3), 183–191 (2007).
[Crossref] [PubMed]

Nat. Nanotechnol. (1)

Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7(11), 699–712 (2012).
[Crossref] [PubMed]

Nature (1)

A. K. Geim and I. V. Grigorieva, “Van der Waals heterostructures,” Nature 499(7459), 419–425 (2013).
[Crossref] [PubMed]

Opt. Express (2)

Other (4)

H. Anders, Thin Films in Optices (Focal, 1967).

D. E. Palik, “Graphite (C),” in Handbook of Optical Constants of Solids (Academic, 1998).

D. E. Palik, “Silicon dioxide (SiO2) (glass),” in Handbook of Optical Constants of Solids (Academic, 1998).

D. E. Palik, “Silicon (Si),” in Handbook of Optical Constants of Solids (Academic, 1998).

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Figures (3)

Fig. 1
Fig. 1 Schematic depiction of optical reflection and transmission for 2D MoS2 (with thickness d1 and complex index of refraction n1) and graphene (d2, n2) transferred on top of a SiO2/Si substrate, with SiO2 layer (thickness d3 and index of refraction n3) and degenerately doped Si substrate (n4).
Fig. 2
Fig. 2 (a) Calculated contrast as a function of incident light wavelength for monolayer MoS2/monolayer graphene heterostructure (red line), and monolayer graphene (blue line) on top of SiO2/Si substrate with SiO2 thickness 300 nm. (b) Contrast as a function of incident light wavelength for monolayer MoS2/monolayer graphene heterostructure calculated with our model based on Fresnel law (red line), and with FDTD method (black line). (c) Calculated contrast as a function of incident light wavelength for different layers of MoS2/graphene heterostructure, with monolayer MoS2 (black line), bi-layer MoS2 (red line), and tri-layer MoS2 (blue line). The points in Fig. 2(c). are measured values of contrast with 460 nm, 520 nm, 620 nm incident light, respectively.
Fig. 3
Fig. 3 (a, b, c) Optical image of as prepared MoS2/graphene heterostructure at white light (The layer numbers are monolayer, bi-layer, and tri-layer, respectively). (d, e, f) Optical image of MoS2/graphene heterostructure at 460 nm incident light. All scale bars are 20 μm. (g, h, i) Raman spectrum of different layers MoS2/graphene heterostructure (a 514nm excitation light).

Equations (5)

Equations on this page are rendered with MathJax. Learn more.

ρ 3 e i Δ 3 = r 3 + r 4 e 2i δ 3 1+ r 3 r 4 e 2i δ 3
ρ 2 e i Δ 2 = r 2 + ρ 3 e i Δ 3 e 2i δ 2 1+ r 2 ρ 3 e i Δ 3 e 2i δ 2
ρ 1 e i Δ 1 = r 1 + ρ 2 e i Δ 2 e 2i δ 1 1+ r 21 ρ 2 e i Δ 2 e 2i δ 1
R= | ρ 1 e i Δ 1 | 2
Contrast= R( n 1 , n 2 =1)R R( n 1 , n 2 =1)

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