Abstract

The optical properties of reactive co-sputtered erbium doped silicon rich oxynitride (Er:SRON) films are studied as a function of annealing temperatures (Ta). The sensitization mechanism of Er3+ is found to evolve with Ta: excess Si related localized states play the essential role in samples when Ta is below 700 °C, while silicon nanoclusters (Si-NCs) become the dominate sensitizers when Ta exceeds 800 °C. Our results show that higher density of sensitized Er3+ could be acquired via energy transfer from localized states, and thus provide an alternative way for the engineering of light sources based on Er:SRON.

© 2014 Optical Society of America

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  1. A. Polman, “Erbium implanted thin film photonic materials,” J. Appl. Phys. 82(1), 1–39 (1997).
    [CrossRef] [PubMed]
  2. A. J. Kenyon, P. F. Trwoga, M. Federighi, C. W. Pitt, “Optical properties of PECVD erbium-doped silicon-rich silica: evidence for energy transfer between silicon microclusters and erbium ions,” J. Phys. Condens. Matter 6(21), L319–L324 (1994).
    [CrossRef]
  3. M. Fujii, M. Yoshida, Y. Kanzawa, S. Hayashi, K. Yamamoto, “1.54 μm photoluminescence of Er3+ doped into SiO2 films containing Si nanocrystals: Evidence for energy transfer from Si nanocrystals to Er3+,” Appl. Phys. Lett. 71(9), 1198–1200 (1997).
    [CrossRef]
  4. F. Priolo, G. Franzò, D. Pacifici, V. Vinciguerra, F. Iacona, A. Irrera, “Role of the energy transfer in the optical properties of undoped and Er-doped interacting Si nanocrystals,” J. Appl. Phys. 89(1), 264–272 (2001).
    [CrossRef]
  5. S. Cueff, C. Labbé, L. Khomenkova, O. Jambois, P. Pellegrino, B. Garrido, C. Frilay, R. Rizk, “Silicon-rich oxynitride hosts for 1.5 μm Er3+ emission fabricated by reactive and standard RF magnetron sputtering,” Mater. Sci. Eng. B: Adv. Funct. Solid-State Mater. 177(10), 725–728 (2012).
    [CrossRef]
  6. L. Xu, L. Jin, D. Li, D. Yang, “Effects of excess silicon on the 1540 nm Er3+ luminescence in silicon rich oxynitride films,” Appl. Phys. Lett. 103(7), 071101 (2013).
    [CrossRef]
  7. X. Wang, R. Huang, C. Song, Y. Guo, J. Song, “Effect of barrier layers on electroluminescence from Si/SiOxNy multilayer structures,” Appl. Phys. Lett. 102(8), 081114 (2013).
    [CrossRef]
  8. A. Nazarov, J. M. Sun, W. Skorupa, R. A. Yankov, I. N. Osiyuk, I. P. Tjagulskii, V. S. Lysenko, T. Gebel, “Light emission and charge trapping in Er-doped silicon dioxide films containing silicon nanocrystals,” Appl. Phys. Lett. 86(15), 151914 (2005).
    [CrossRef]
  9. O. Jambois, J. M. Ramírez, Y. Berencén, D. Navarro-Urrios, A. Anopchenko, A. Marconi, N. Prtljaga, A. Tengattini, P. Pellegrino, N. Daldosso, L. Pavesi, J.-P. Colonna, J.-M. Fedeli, B. Garrido, “Effect of the annealing treatments on the electroluminescence efficiency of SiO2 layers doped with Si and Er,” J. Phys. D Appl. Phys. 45(4), 045103 (2012).
    [CrossRef]
  10. S. Cueff, J. Manel Ramírez, J. A. Kurvits, Y. Berencén, R. Zia, B. Garrido, R. Rizk, C. Labbé, “Electroluminescence efficiencies of erbium in silicon-based hosts,” Appl. Phys. Lett. 103(19), 191109 (2013).
    [CrossRef]
  11. A. Anopchenko, A. Tengattini, A. Marconi, N. Prtljaga, J. M. Ramírez, O. Jambois, Y. Berencén, D. Navarro-Urrios, B. Garrido, F. Milesi, J.-P. Colonna, J.-M. Fedeli, L. Pavesi, “Bipolar pulsed excitation of erbium-doped nanosilicon light emitting diodes,” J. Appl. Phys. 111(6), 063102 (2012).
    [CrossRef]
  12. J. M. Ramíırez, F. Ferrarese Lupi, O. Jambois, Y. Berencén, D. Navarro-Urrios, A. Anopchenko, A. Marconi, N. Prtljaga, A. Tengattini, L. Pavesi, J. P. Colonna, J. M. Fedeli, B. Garrido, “Erbium emission in MOS light emitting devices: from energy transfer to direct impact excitation,” Nanotechnology 23(12), 125203 (2012).
    [CrossRef] [PubMed]
  13. O. Savchyn, F. R. Ruhge, P. G. Kik, R. M. Todi, K. R. Coffey, H. Nukala, H. Heinrich, “Luminescence-center-mediated excitation as the dominant Er sensitization mechanism in Er-doped silicon-rich SiO2 films,” Phys. Rev. B 76(19), 195419 (2007).
    [CrossRef]
  14. L. Jin, D. Li, L. Xiang, F. Wang, D. Yang, D. Que, “Energy transfer from luminescent centers to Er3+ in erbium-doped silicon-rich oxide films,” Nanoscale Res. Lett. 8(1), 366 (2013).
    [CrossRef] [PubMed]
  15. S. Yerci, R. Li, S. O. Kucheyev, T. van Buuren, S. N. Basu, L. Dal Negro, “Energy transfer and 1.54 μm emission in amorphous silicon nitride films,” Appl. Phys. Lett. 95(3), 031107 (2009).
    [CrossRef]
  16. M. Wojdak, M. Klik, M. Forcales, O. B. Gusev, T. Gregorkiewicz, D. Pacifici, G. Franzò, F. Priolo, F. Iacona, “Sensitization of Er luminescence by Si nanoclusters,” Phys. Rev. B 69(23), 233315 (2004).
    [CrossRef]
  17. C. J. Oton, W. H. Loh, A. J. Kenyon, “Er3+ excited state absorption and the low fraction of nanocluster-excitable Er3+ in SiOx,” Appl. Phys. Lett. 89(3), 031116 (2006).
    [CrossRef]
  18. B. Garrido, C. García, P. Pellegrino, D. Navarro-Urrios, N. Daldosso, L. Pavesi, F. Gourbilleau, R. Rizk, “Distance dependent interaction as the limiting factor for Si nanocluster to Er energy transfer in silica,” Appl. Phys. Lett. 89(16), 163103 (2006).
    [CrossRef]
  19. B. Garrido, C. García, S. Y. Seo, P. Pellegrino, D. Navarro-Urrios, N. Daldosso, L. Pavesi, F. Gourbilleau, R. Rizk, “Excitable Er fraction and quenching phenomena in Er-doped SiO2 layers containing Si nanoclusters,” Phys. Rev. B 76(24), 245308 (2007).
    [CrossRef]
  20. F. Lenz, A. Hryciw, R. DeCorby, A. Meldrum, “Reversing the temperature dependence of the sensitized Er3+ luminescence intensity,” Appl. Phys. Lett. 95(9), 091909 (2009).
    [CrossRef]
  21. F. Rebib, E. Tomasella, M. Dubois, J. Cellier, T. Sauvage, M. Jacquet, “Structural and optical investigations of SiOxNy thin films deposited by R.F. sputtering,” Surf. Coat. Tech. 200(1–4), 330–333 (2005).
    [CrossRef]
  22. K. Hijazi, R. Rizk, J. Cardin, L. Khomenkova, F. Gourbilleau, “Towards an optimum coupling between Er ions and Si-based sensitizers for integrated active photonics,” J. Appl. Phys. 106(2), 024311 (2009).
    [CrossRef]
  23. E. Steveler, H. Rinnert, X. Devaux, M. Dossot, M. Vergnat, “Indirect excitation of Er3+ ions in silicon nitride films prepared by reactive evaporation,” Appl. Phys. Lett. 97(22), 221902 (2010).
    [CrossRef]
  24. N. Prtljaga, D. Navarro-Urrios, A. Tengattini, A. Anopchenko, J. M. Ramírez, J. M. Rebled, S. Estradé, J. P. Colonna, J. M. Fedeli, B. Garrido, L. Pavesi, “Limit to the erbium ions emission in silicon-rich oxide films by erbium ion clustering,” Opt. Mater. Express 2(9), 1278–1285 (2012).
    [CrossRef]
  25. O. Savchyn, P. G. Kik, R. M. Todi, K. R. Coffey, “Effect of hydrogen passivation on luminescence-center-mediated Er excitation in Si-rich SiO2 with and without Si nanocrystals,” Phys. Rev. B 77(20), 205438 (2008).
    [CrossRef]

2013 (4)

L. Xu, L. Jin, D. Li, D. Yang, “Effects of excess silicon on the 1540 nm Er3+ luminescence in silicon rich oxynitride films,” Appl. Phys. Lett. 103(7), 071101 (2013).
[CrossRef]

X. Wang, R. Huang, C. Song, Y. Guo, J. Song, “Effect of barrier layers on electroluminescence from Si/SiOxNy multilayer structures,” Appl. Phys. Lett. 102(8), 081114 (2013).
[CrossRef]

S. Cueff, J. Manel Ramírez, J. A. Kurvits, Y. Berencén, R. Zia, B. Garrido, R. Rizk, C. Labbé, “Electroluminescence efficiencies of erbium in silicon-based hosts,” Appl. Phys. Lett. 103(19), 191109 (2013).
[CrossRef]

L. Jin, D. Li, L. Xiang, F. Wang, D. Yang, D. Que, “Energy transfer from luminescent centers to Er3+ in erbium-doped silicon-rich oxide films,” Nanoscale Res. Lett. 8(1), 366 (2013).
[CrossRef] [PubMed]

2012 (5)

A. Anopchenko, A. Tengattini, A. Marconi, N. Prtljaga, J. M. Ramírez, O. Jambois, Y. Berencén, D. Navarro-Urrios, B. Garrido, F. Milesi, J.-P. Colonna, J.-M. Fedeli, L. Pavesi, “Bipolar pulsed excitation of erbium-doped nanosilicon light emitting diodes,” J. Appl. Phys. 111(6), 063102 (2012).
[CrossRef]

J. M. Ramíırez, F. Ferrarese Lupi, O. Jambois, Y. Berencén, D. Navarro-Urrios, A. Anopchenko, A. Marconi, N. Prtljaga, A. Tengattini, L. Pavesi, J. P. Colonna, J. M. Fedeli, B. Garrido, “Erbium emission in MOS light emitting devices: from energy transfer to direct impact excitation,” Nanotechnology 23(12), 125203 (2012).
[CrossRef] [PubMed]

S. Cueff, C. Labbé, L. Khomenkova, O. Jambois, P. Pellegrino, B. Garrido, C. Frilay, R. Rizk, “Silicon-rich oxynitride hosts for 1.5 μm Er3+ emission fabricated by reactive and standard RF magnetron sputtering,” Mater. Sci. Eng. B: Adv. Funct. Solid-State Mater. 177(10), 725–728 (2012).
[CrossRef]

O. Jambois, J. M. Ramírez, Y. Berencén, D. Navarro-Urrios, A. Anopchenko, A. Marconi, N. Prtljaga, A. Tengattini, P. Pellegrino, N. Daldosso, L. Pavesi, J.-P. Colonna, J.-M. Fedeli, B. Garrido, “Effect of the annealing treatments on the electroluminescence efficiency of SiO2 layers doped with Si and Er,” J. Phys. D Appl. Phys. 45(4), 045103 (2012).
[CrossRef]

N. Prtljaga, D. Navarro-Urrios, A. Tengattini, A. Anopchenko, J. M. Ramírez, J. M. Rebled, S. Estradé, J. P. Colonna, J. M. Fedeli, B. Garrido, L. Pavesi, “Limit to the erbium ions emission in silicon-rich oxide films by erbium ion clustering,” Opt. Mater. Express 2(9), 1278–1285 (2012).
[CrossRef]

2010 (1)

E. Steveler, H. Rinnert, X. Devaux, M. Dossot, M. Vergnat, “Indirect excitation of Er3+ ions in silicon nitride films prepared by reactive evaporation,” Appl. Phys. Lett. 97(22), 221902 (2010).
[CrossRef]

2009 (3)

F. Lenz, A. Hryciw, R. DeCorby, A. Meldrum, “Reversing the temperature dependence of the sensitized Er3+ luminescence intensity,” Appl. Phys. Lett. 95(9), 091909 (2009).
[CrossRef]

K. Hijazi, R. Rizk, J. Cardin, L. Khomenkova, F. Gourbilleau, “Towards an optimum coupling between Er ions and Si-based sensitizers for integrated active photonics,” J. Appl. Phys. 106(2), 024311 (2009).
[CrossRef]

S. Yerci, R. Li, S. O. Kucheyev, T. van Buuren, S. N. Basu, L. Dal Negro, “Energy transfer and 1.54 μm emission in amorphous silicon nitride films,” Appl. Phys. Lett. 95(3), 031107 (2009).
[CrossRef]

2008 (1)

O. Savchyn, P. G. Kik, R. M. Todi, K. R. Coffey, “Effect of hydrogen passivation on luminescence-center-mediated Er excitation in Si-rich SiO2 with and without Si nanocrystals,” Phys. Rev. B 77(20), 205438 (2008).
[CrossRef]

2007 (2)

B. Garrido, C. García, S. Y. Seo, P. Pellegrino, D. Navarro-Urrios, N. Daldosso, L. Pavesi, F. Gourbilleau, R. Rizk, “Excitable Er fraction and quenching phenomena in Er-doped SiO2 layers containing Si nanoclusters,” Phys. Rev. B 76(24), 245308 (2007).
[CrossRef]

O. Savchyn, F. R. Ruhge, P. G. Kik, R. M. Todi, K. R. Coffey, H. Nukala, H. Heinrich, “Luminescence-center-mediated excitation as the dominant Er sensitization mechanism in Er-doped silicon-rich SiO2 films,” Phys. Rev. B 76(19), 195419 (2007).
[CrossRef]

2006 (2)

C. J. Oton, W. H. Loh, A. J. Kenyon, “Er3+ excited state absorption and the low fraction of nanocluster-excitable Er3+ in SiOx,” Appl. Phys. Lett. 89(3), 031116 (2006).
[CrossRef]

B. Garrido, C. García, P. Pellegrino, D. Navarro-Urrios, N. Daldosso, L. Pavesi, F. Gourbilleau, R. Rizk, “Distance dependent interaction as the limiting factor for Si nanocluster to Er energy transfer in silica,” Appl. Phys. Lett. 89(16), 163103 (2006).
[CrossRef]

2005 (2)

A. Nazarov, J. M. Sun, W. Skorupa, R. A. Yankov, I. N. Osiyuk, I. P. Tjagulskii, V. S. Lysenko, T. Gebel, “Light emission and charge trapping in Er-doped silicon dioxide films containing silicon nanocrystals,” Appl. Phys. Lett. 86(15), 151914 (2005).
[CrossRef]

F. Rebib, E. Tomasella, M. Dubois, J. Cellier, T. Sauvage, M. Jacquet, “Structural and optical investigations of SiOxNy thin films deposited by R.F. sputtering,” Surf. Coat. Tech. 200(1–4), 330–333 (2005).
[CrossRef]

2004 (1)

M. Wojdak, M. Klik, M. Forcales, O. B. Gusev, T. Gregorkiewicz, D. Pacifici, G. Franzò, F. Priolo, F. Iacona, “Sensitization of Er luminescence by Si nanoclusters,” Phys. Rev. B 69(23), 233315 (2004).
[CrossRef]

2001 (1)

F. Priolo, G. Franzò, D. Pacifici, V. Vinciguerra, F. Iacona, A. Irrera, “Role of the energy transfer in the optical properties of undoped and Er-doped interacting Si nanocrystals,” J. Appl. Phys. 89(1), 264–272 (2001).
[CrossRef]

1997 (2)

M. Fujii, M. Yoshida, Y. Kanzawa, S. Hayashi, K. Yamamoto, “1.54 μm photoluminescence of Er3+ doped into SiO2 films containing Si nanocrystals: Evidence for energy transfer from Si nanocrystals to Er3+,” Appl. Phys. Lett. 71(9), 1198–1200 (1997).
[CrossRef]

A. Polman, “Erbium implanted thin film photonic materials,” J. Appl. Phys. 82(1), 1–39 (1997).
[CrossRef] [PubMed]

1994 (1)

A. J. Kenyon, P. F. Trwoga, M. Federighi, C. W. Pitt, “Optical properties of PECVD erbium-doped silicon-rich silica: evidence for energy transfer between silicon microclusters and erbium ions,” J. Phys. Condens. Matter 6(21), L319–L324 (1994).
[CrossRef]

Anopchenko, A.

O. Jambois, J. M. Ramírez, Y. Berencén, D. Navarro-Urrios, A. Anopchenko, A. Marconi, N. Prtljaga, A. Tengattini, P. Pellegrino, N. Daldosso, L. Pavesi, J.-P. Colonna, J.-M. Fedeli, B. Garrido, “Effect of the annealing treatments on the electroluminescence efficiency of SiO2 layers doped with Si and Er,” J. Phys. D Appl. Phys. 45(4), 045103 (2012).
[CrossRef]

J. M. Ramíırez, F. Ferrarese Lupi, O. Jambois, Y. Berencén, D. Navarro-Urrios, A. Anopchenko, A. Marconi, N. Prtljaga, A. Tengattini, L. Pavesi, J. P. Colonna, J. M. Fedeli, B. Garrido, “Erbium emission in MOS light emitting devices: from energy transfer to direct impact excitation,” Nanotechnology 23(12), 125203 (2012).
[CrossRef] [PubMed]

N. Prtljaga, D. Navarro-Urrios, A. Tengattini, A. Anopchenko, J. M. Ramírez, J. M. Rebled, S. Estradé, J. P. Colonna, J. M. Fedeli, B. Garrido, L. Pavesi, “Limit to the erbium ions emission in silicon-rich oxide films by erbium ion clustering,” Opt. Mater. Express 2(9), 1278–1285 (2012).
[CrossRef]

A. Anopchenko, A. Tengattini, A. Marconi, N. Prtljaga, J. M. Ramírez, O. Jambois, Y. Berencén, D. Navarro-Urrios, B. Garrido, F. Milesi, J.-P. Colonna, J.-M. Fedeli, L. Pavesi, “Bipolar pulsed excitation of erbium-doped nanosilicon light emitting diodes,” J. Appl. Phys. 111(6), 063102 (2012).
[CrossRef]

Basu, S. N.

S. Yerci, R. Li, S. O. Kucheyev, T. van Buuren, S. N. Basu, L. Dal Negro, “Energy transfer and 1.54 μm emission in amorphous silicon nitride films,” Appl. Phys. Lett. 95(3), 031107 (2009).
[CrossRef]

Berencén, Y.

S. Cueff, J. Manel Ramírez, J. A. Kurvits, Y. Berencén, R. Zia, B. Garrido, R. Rizk, C. Labbé, “Electroluminescence efficiencies of erbium in silicon-based hosts,” Appl. Phys. Lett. 103(19), 191109 (2013).
[CrossRef]

J. M. Ramíırez, F. Ferrarese Lupi, O. Jambois, Y. Berencén, D. Navarro-Urrios, A. Anopchenko, A. Marconi, N. Prtljaga, A. Tengattini, L. Pavesi, J. P. Colonna, J. M. Fedeli, B. Garrido, “Erbium emission in MOS light emitting devices: from energy transfer to direct impact excitation,” Nanotechnology 23(12), 125203 (2012).
[CrossRef] [PubMed]

O. Jambois, J. M. Ramírez, Y. Berencén, D. Navarro-Urrios, A. Anopchenko, A. Marconi, N. Prtljaga, A. Tengattini, P. Pellegrino, N. Daldosso, L. Pavesi, J.-P. Colonna, J.-M. Fedeli, B. Garrido, “Effect of the annealing treatments on the electroluminescence efficiency of SiO2 layers doped with Si and Er,” J. Phys. D Appl. Phys. 45(4), 045103 (2012).
[CrossRef]

A. Anopchenko, A. Tengattini, A. Marconi, N. Prtljaga, J. M. Ramírez, O. Jambois, Y. Berencén, D. Navarro-Urrios, B. Garrido, F. Milesi, J.-P. Colonna, J.-M. Fedeli, L. Pavesi, “Bipolar pulsed excitation of erbium-doped nanosilicon light emitting diodes,” J. Appl. Phys. 111(6), 063102 (2012).
[CrossRef]

Cardin, J.

K. Hijazi, R. Rizk, J. Cardin, L. Khomenkova, F. Gourbilleau, “Towards an optimum coupling between Er ions and Si-based sensitizers for integrated active photonics,” J. Appl. Phys. 106(2), 024311 (2009).
[CrossRef]

Cellier, J.

F. Rebib, E. Tomasella, M. Dubois, J. Cellier, T. Sauvage, M. Jacquet, “Structural and optical investigations of SiOxNy thin films deposited by R.F. sputtering,” Surf. Coat. Tech. 200(1–4), 330–333 (2005).
[CrossRef]

Coffey, K. R.

O. Savchyn, P. G. Kik, R. M. Todi, K. R. Coffey, “Effect of hydrogen passivation on luminescence-center-mediated Er excitation in Si-rich SiO2 with and without Si nanocrystals,” Phys. Rev. B 77(20), 205438 (2008).
[CrossRef]

O. Savchyn, F. R. Ruhge, P. G. Kik, R. M. Todi, K. R. Coffey, H. Nukala, H. Heinrich, “Luminescence-center-mediated excitation as the dominant Er sensitization mechanism in Er-doped silicon-rich SiO2 films,” Phys. Rev. B 76(19), 195419 (2007).
[CrossRef]

Colonna, J. P.

N. Prtljaga, D. Navarro-Urrios, A. Tengattini, A. Anopchenko, J. M. Ramírez, J. M. Rebled, S. Estradé, J. P. Colonna, J. M. Fedeli, B. Garrido, L. Pavesi, “Limit to the erbium ions emission in silicon-rich oxide films by erbium ion clustering,” Opt. Mater. Express 2(9), 1278–1285 (2012).
[CrossRef]

J. M. Ramíırez, F. Ferrarese Lupi, O. Jambois, Y. Berencén, D. Navarro-Urrios, A. Anopchenko, A. Marconi, N. Prtljaga, A. Tengattini, L. Pavesi, J. P. Colonna, J. M. Fedeli, B. Garrido, “Erbium emission in MOS light emitting devices: from energy transfer to direct impact excitation,” Nanotechnology 23(12), 125203 (2012).
[CrossRef] [PubMed]

Colonna, J.-P.

O. Jambois, J. M. Ramírez, Y. Berencén, D. Navarro-Urrios, A. Anopchenko, A. Marconi, N. Prtljaga, A. Tengattini, P. Pellegrino, N. Daldosso, L. Pavesi, J.-P. Colonna, J.-M. Fedeli, B. Garrido, “Effect of the annealing treatments on the electroluminescence efficiency of SiO2 layers doped with Si and Er,” J. Phys. D Appl. Phys. 45(4), 045103 (2012).
[CrossRef]

A. Anopchenko, A. Tengattini, A. Marconi, N. Prtljaga, J. M. Ramírez, O. Jambois, Y. Berencén, D. Navarro-Urrios, B. Garrido, F. Milesi, J.-P. Colonna, J.-M. Fedeli, L. Pavesi, “Bipolar pulsed excitation of erbium-doped nanosilicon light emitting diodes,” J. Appl. Phys. 111(6), 063102 (2012).
[CrossRef]

Cueff, S.

S. Cueff, J. Manel Ramírez, J. A. Kurvits, Y. Berencén, R. Zia, B. Garrido, R. Rizk, C. Labbé, “Electroluminescence efficiencies of erbium in silicon-based hosts,” Appl. Phys. Lett. 103(19), 191109 (2013).
[CrossRef]

S. Cueff, C. Labbé, L. Khomenkova, O. Jambois, P. Pellegrino, B. Garrido, C. Frilay, R. Rizk, “Silicon-rich oxynitride hosts for 1.5 μm Er3+ emission fabricated by reactive and standard RF magnetron sputtering,” Mater. Sci. Eng. B: Adv. Funct. Solid-State Mater. 177(10), 725–728 (2012).
[CrossRef]

Dal Negro, L.

S. Yerci, R. Li, S. O. Kucheyev, T. van Buuren, S. N. Basu, L. Dal Negro, “Energy transfer and 1.54 μm emission in amorphous silicon nitride films,” Appl. Phys. Lett. 95(3), 031107 (2009).
[CrossRef]

Daldosso, N.

O. Jambois, J. M. Ramírez, Y. Berencén, D. Navarro-Urrios, A. Anopchenko, A. Marconi, N. Prtljaga, A. Tengattini, P. Pellegrino, N. Daldosso, L. Pavesi, J.-P. Colonna, J.-M. Fedeli, B. Garrido, “Effect of the annealing treatments on the electroluminescence efficiency of SiO2 layers doped with Si and Er,” J. Phys. D Appl. Phys. 45(4), 045103 (2012).
[CrossRef]

B. Garrido, C. García, S. Y. Seo, P. Pellegrino, D. Navarro-Urrios, N. Daldosso, L. Pavesi, F. Gourbilleau, R. Rizk, “Excitable Er fraction and quenching phenomena in Er-doped SiO2 layers containing Si nanoclusters,” Phys. Rev. B 76(24), 245308 (2007).
[CrossRef]

B. Garrido, C. García, P. Pellegrino, D. Navarro-Urrios, N. Daldosso, L. Pavesi, F. Gourbilleau, R. Rizk, “Distance dependent interaction as the limiting factor for Si nanocluster to Er energy transfer in silica,” Appl. Phys. Lett. 89(16), 163103 (2006).
[CrossRef]

DeCorby, R.

F. Lenz, A. Hryciw, R. DeCorby, A. Meldrum, “Reversing the temperature dependence of the sensitized Er3+ luminescence intensity,” Appl. Phys. Lett. 95(9), 091909 (2009).
[CrossRef]

Devaux, X.

E. Steveler, H. Rinnert, X. Devaux, M. Dossot, M. Vergnat, “Indirect excitation of Er3+ ions in silicon nitride films prepared by reactive evaporation,” Appl. Phys. Lett. 97(22), 221902 (2010).
[CrossRef]

Dossot, M.

E. Steveler, H. Rinnert, X. Devaux, M. Dossot, M. Vergnat, “Indirect excitation of Er3+ ions in silicon nitride films prepared by reactive evaporation,” Appl. Phys. Lett. 97(22), 221902 (2010).
[CrossRef]

Dubois, M.

F. Rebib, E. Tomasella, M. Dubois, J. Cellier, T. Sauvage, M. Jacquet, “Structural and optical investigations of SiOxNy thin films deposited by R.F. sputtering,” Surf. Coat. Tech. 200(1–4), 330–333 (2005).
[CrossRef]

Estradé, S.

Fedeli, J. M.

N. Prtljaga, D. Navarro-Urrios, A. Tengattini, A. Anopchenko, J. M. Ramírez, J. M. Rebled, S. Estradé, J. P. Colonna, J. M. Fedeli, B. Garrido, L. Pavesi, “Limit to the erbium ions emission in silicon-rich oxide films by erbium ion clustering,” Opt. Mater. Express 2(9), 1278–1285 (2012).
[CrossRef]

J. M. Ramíırez, F. Ferrarese Lupi, O. Jambois, Y. Berencén, D. Navarro-Urrios, A. Anopchenko, A. Marconi, N. Prtljaga, A. Tengattini, L. Pavesi, J. P. Colonna, J. M. Fedeli, B. Garrido, “Erbium emission in MOS light emitting devices: from energy transfer to direct impact excitation,” Nanotechnology 23(12), 125203 (2012).
[CrossRef] [PubMed]

Fedeli, J.-M.

O. Jambois, J. M. Ramírez, Y. Berencén, D. Navarro-Urrios, A. Anopchenko, A. Marconi, N. Prtljaga, A. Tengattini, P. Pellegrino, N. Daldosso, L. Pavesi, J.-P. Colonna, J.-M. Fedeli, B. Garrido, “Effect of the annealing treatments on the electroluminescence efficiency of SiO2 layers doped with Si and Er,” J. Phys. D Appl. Phys. 45(4), 045103 (2012).
[CrossRef]

A. Anopchenko, A. Tengattini, A. Marconi, N. Prtljaga, J. M. Ramírez, O. Jambois, Y. Berencén, D. Navarro-Urrios, B. Garrido, F. Milesi, J.-P. Colonna, J.-M. Fedeli, L. Pavesi, “Bipolar pulsed excitation of erbium-doped nanosilicon light emitting diodes,” J. Appl. Phys. 111(6), 063102 (2012).
[CrossRef]

Federighi, M.

A. J. Kenyon, P. F. Trwoga, M. Federighi, C. W. Pitt, “Optical properties of PECVD erbium-doped silicon-rich silica: evidence for energy transfer between silicon microclusters and erbium ions,” J. Phys. Condens. Matter 6(21), L319–L324 (1994).
[CrossRef]

Ferrarese Lupi, F.

J. M. Ramíırez, F. Ferrarese Lupi, O. Jambois, Y. Berencén, D. Navarro-Urrios, A. Anopchenko, A. Marconi, N. Prtljaga, A. Tengattini, L. Pavesi, J. P. Colonna, J. M. Fedeli, B. Garrido, “Erbium emission in MOS light emitting devices: from energy transfer to direct impact excitation,” Nanotechnology 23(12), 125203 (2012).
[CrossRef] [PubMed]

Forcales, M.

M. Wojdak, M. Klik, M. Forcales, O. B. Gusev, T. Gregorkiewicz, D. Pacifici, G. Franzò, F. Priolo, F. Iacona, “Sensitization of Er luminescence by Si nanoclusters,” Phys. Rev. B 69(23), 233315 (2004).
[CrossRef]

Franzò, G.

M. Wojdak, M. Klik, M. Forcales, O. B. Gusev, T. Gregorkiewicz, D. Pacifici, G. Franzò, F. Priolo, F. Iacona, “Sensitization of Er luminescence by Si nanoclusters,” Phys. Rev. B 69(23), 233315 (2004).
[CrossRef]

F. Priolo, G. Franzò, D. Pacifici, V. Vinciguerra, F. Iacona, A. Irrera, “Role of the energy transfer in the optical properties of undoped and Er-doped interacting Si nanocrystals,” J. Appl. Phys. 89(1), 264–272 (2001).
[CrossRef]

Frilay, C.

S. Cueff, C. Labbé, L. Khomenkova, O. Jambois, P. Pellegrino, B. Garrido, C. Frilay, R. Rizk, “Silicon-rich oxynitride hosts for 1.5 μm Er3+ emission fabricated by reactive and standard RF magnetron sputtering,” Mater. Sci. Eng. B: Adv. Funct. Solid-State Mater. 177(10), 725–728 (2012).
[CrossRef]

Fujii, M.

M. Fujii, M. Yoshida, Y. Kanzawa, S. Hayashi, K. Yamamoto, “1.54 μm photoluminescence of Er3+ doped into SiO2 films containing Si nanocrystals: Evidence for energy transfer from Si nanocrystals to Er3+,” Appl. Phys. Lett. 71(9), 1198–1200 (1997).
[CrossRef]

García, C.

B. Garrido, C. García, S. Y. Seo, P. Pellegrino, D. Navarro-Urrios, N. Daldosso, L. Pavesi, F. Gourbilleau, R. Rizk, “Excitable Er fraction and quenching phenomena in Er-doped SiO2 layers containing Si nanoclusters,” Phys. Rev. B 76(24), 245308 (2007).
[CrossRef]

B. Garrido, C. García, P. Pellegrino, D. Navarro-Urrios, N. Daldosso, L. Pavesi, F. Gourbilleau, R. Rizk, “Distance dependent interaction as the limiting factor for Si nanocluster to Er energy transfer in silica,” Appl. Phys. Lett. 89(16), 163103 (2006).
[CrossRef]

Garrido, B.

S. Cueff, J. Manel Ramírez, J. A. Kurvits, Y. Berencén, R. Zia, B. Garrido, R. Rizk, C. Labbé, “Electroluminescence efficiencies of erbium in silicon-based hosts,” Appl. Phys. Lett. 103(19), 191109 (2013).
[CrossRef]

J. M. Ramíırez, F. Ferrarese Lupi, O. Jambois, Y. Berencén, D. Navarro-Urrios, A. Anopchenko, A. Marconi, N. Prtljaga, A. Tengattini, L. Pavesi, J. P. Colonna, J. M. Fedeli, B. Garrido, “Erbium emission in MOS light emitting devices: from energy transfer to direct impact excitation,” Nanotechnology 23(12), 125203 (2012).
[CrossRef] [PubMed]

O. Jambois, J. M. Ramírez, Y. Berencén, D. Navarro-Urrios, A. Anopchenko, A. Marconi, N. Prtljaga, A. Tengattini, P. Pellegrino, N. Daldosso, L. Pavesi, J.-P. Colonna, J.-M. Fedeli, B. Garrido, “Effect of the annealing treatments on the electroluminescence efficiency of SiO2 layers doped with Si and Er,” J. Phys. D Appl. Phys. 45(4), 045103 (2012).
[CrossRef]

N. Prtljaga, D. Navarro-Urrios, A. Tengattini, A. Anopchenko, J. M. Ramírez, J. M. Rebled, S. Estradé, J. P. Colonna, J. M. Fedeli, B. Garrido, L. Pavesi, “Limit to the erbium ions emission in silicon-rich oxide films by erbium ion clustering,” Opt. Mater. Express 2(9), 1278–1285 (2012).
[CrossRef]

A. Anopchenko, A. Tengattini, A. Marconi, N. Prtljaga, J. M. Ramírez, O. Jambois, Y. Berencén, D. Navarro-Urrios, B. Garrido, F. Milesi, J.-P. Colonna, J.-M. Fedeli, L. Pavesi, “Bipolar pulsed excitation of erbium-doped nanosilicon light emitting diodes,” J. Appl. Phys. 111(6), 063102 (2012).
[CrossRef]

S. Cueff, C. Labbé, L. Khomenkova, O. Jambois, P. Pellegrino, B. Garrido, C. Frilay, R. Rizk, “Silicon-rich oxynitride hosts for 1.5 μm Er3+ emission fabricated by reactive and standard RF magnetron sputtering,” Mater. Sci. Eng. B: Adv. Funct. Solid-State Mater. 177(10), 725–728 (2012).
[CrossRef]

B. Garrido, C. García, S. Y. Seo, P. Pellegrino, D. Navarro-Urrios, N. Daldosso, L. Pavesi, F. Gourbilleau, R. Rizk, “Excitable Er fraction and quenching phenomena in Er-doped SiO2 layers containing Si nanoclusters,” Phys. Rev. B 76(24), 245308 (2007).
[CrossRef]

B. Garrido, C. García, P. Pellegrino, D. Navarro-Urrios, N. Daldosso, L. Pavesi, F. Gourbilleau, R. Rizk, “Distance dependent interaction as the limiting factor for Si nanocluster to Er energy transfer in silica,” Appl. Phys. Lett. 89(16), 163103 (2006).
[CrossRef]

Gebel, T.

A. Nazarov, J. M. Sun, W. Skorupa, R. A. Yankov, I. N. Osiyuk, I. P. Tjagulskii, V. S. Lysenko, T. Gebel, “Light emission and charge trapping in Er-doped silicon dioxide films containing silicon nanocrystals,” Appl. Phys. Lett. 86(15), 151914 (2005).
[CrossRef]

Gourbilleau, F.

K. Hijazi, R. Rizk, J. Cardin, L. Khomenkova, F. Gourbilleau, “Towards an optimum coupling between Er ions and Si-based sensitizers for integrated active photonics,” J. Appl. Phys. 106(2), 024311 (2009).
[CrossRef]

B. Garrido, C. García, S. Y. Seo, P. Pellegrino, D. Navarro-Urrios, N. Daldosso, L. Pavesi, F. Gourbilleau, R. Rizk, “Excitable Er fraction and quenching phenomena in Er-doped SiO2 layers containing Si nanoclusters,” Phys. Rev. B 76(24), 245308 (2007).
[CrossRef]

B. Garrido, C. García, P. Pellegrino, D. Navarro-Urrios, N. Daldosso, L. Pavesi, F. Gourbilleau, R. Rizk, “Distance dependent interaction as the limiting factor for Si nanocluster to Er energy transfer in silica,” Appl. Phys. Lett. 89(16), 163103 (2006).
[CrossRef]

Gregorkiewicz, T.

M. Wojdak, M. Klik, M. Forcales, O. B. Gusev, T. Gregorkiewicz, D. Pacifici, G. Franzò, F. Priolo, F. Iacona, “Sensitization of Er luminescence by Si nanoclusters,” Phys. Rev. B 69(23), 233315 (2004).
[CrossRef]

Guo, Y.

X. Wang, R. Huang, C. Song, Y. Guo, J. Song, “Effect of barrier layers on electroluminescence from Si/SiOxNy multilayer structures,” Appl. Phys. Lett. 102(8), 081114 (2013).
[CrossRef]

Gusev, O. B.

M. Wojdak, M. Klik, M. Forcales, O. B. Gusev, T. Gregorkiewicz, D. Pacifici, G. Franzò, F. Priolo, F. Iacona, “Sensitization of Er luminescence by Si nanoclusters,” Phys. Rev. B 69(23), 233315 (2004).
[CrossRef]

Hayashi, S.

M. Fujii, M. Yoshida, Y. Kanzawa, S. Hayashi, K. Yamamoto, “1.54 μm photoluminescence of Er3+ doped into SiO2 films containing Si nanocrystals: Evidence for energy transfer from Si nanocrystals to Er3+,” Appl. Phys. Lett. 71(9), 1198–1200 (1997).
[CrossRef]

Heinrich, H.

O. Savchyn, F. R. Ruhge, P. G. Kik, R. M. Todi, K. R. Coffey, H. Nukala, H. Heinrich, “Luminescence-center-mediated excitation as the dominant Er sensitization mechanism in Er-doped silicon-rich SiO2 films,” Phys. Rev. B 76(19), 195419 (2007).
[CrossRef]

Hijazi, K.

K. Hijazi, R. Rizk, J. Cardin, L. Khomenkova, F. Gourbilleau, “Towards an optimum coupling between Er ions and Si-based sensitizers for integrated active photonics,” J. Appl. Phys. 106(2), 024311 (2009).
[CrossRef]

Hryciw, A.

F. Lenz, A. Hryciw, R. DeCorby, A. Meldrum, “Reversing the temperature dependence of the sensitized Er3+ luminescence intensity,” Appl. Phys. Lett. 95(9), 091909 (2009).
[CrossRef]

Huang, R.

X. Wang, R. Huang, C. Song, Y. Guo, J. Song, “Effect of barrier layers on electroluminescence from Si/SiOxNy multilayer structures,” Appl. Phys. Lett. 102(8), 081114 (2013).
[CrossRef]

Iacona, F.

M. Wojdak, M. Klik, M. Forcales, O. B. Gusev, T. Gregorkiewicz, D. Pacifici, G. Franzò, F. Priolo, F. Iacona, “Sensitization of Er luminescence by Si nanoclusters,” Phys. Rev. B 69(23), 233315 (2004).
[CrossRef]

F. Priolo, G. Franzò, D. Pacifici, V. Vinciguerra, F. Iacona, A. Irrera, “Role of the energy transfer in the optical properties of undoped and Er-doped interacting Si nanocrystals,” J. Appl. Phys. 89(1), 264–272 (2001).
[CrossRef]

Irrera, A.

F. Priolo, G. Franzò, D. Pacifici, V. Vinciguerra, F. Iacona, A. Irrera, “Role of the energy transfer in the optical properties of undoped and Er-doped interacting Si nanocrystals,” J. Appl. Phys. 89(1), 264–272 (2001).
[CrossRef]

Jacquet, M.

F. Rebib, E. Tomasella, M. Dubois, J. Cellier, T. Sauvage, M. Jacquet, “Structural and optical investigations of SiOxNy thin films deposited by R.F. sputtering,” Surf. Coat. Tech. 200(1–4), 330–333 (2005).
[CrossRef]

Jambois, O.

A. Anopchenko, A. Tengattini, A. Marconi, N. Prtljaga, J. M. Ramírez, O. Jambois, Y. Berencén, D. Navarro-Urrios, B. Garrido, F. Milesi, J.-P. Colonna, J.-M. Fedeli, L. Pavesi, “Bipolar pulsed excitation of erbium-doped nanosilicon light emitting diodes,” J. Appl. Phys. 111(6), 063102 (2012).
[CrossRef]

J. M. Ramíırez, F. Ferrarese Lupi, O. Jambois, Y. Berencén, D. Navarro-Urrios, A. Anopchenko, A. Marconi, N. Prtljaga, A. Tengattini, L. Pavesi, J. P. Colonna, J. M. Fedeli, B. Garrido, “Erbium emission in MOS light emitting devices: from energy transfer to direct impact excitation,” Nanotechnology 23(12), 125203 (2012).
[CrossRef] [PubMed]

O. Jambois, J. M. Ramírez, Y. Berencén, D. Navarro-Urrios, A. Anopchenko, A. Marconi, N. Prtljaga, A. Tengattini, P. Pellegrino, N. Daldosso, L. Pavesi, J.-P. Colonna, J.-M. Fedeli, B. Garrido, “Effect of the annealing treatments on the electroluminescence efficiency of SiO2 layers doped with Si and Er,” J. Phys. D Appl. Phys. 45(4), 045103 (2012).
[CrossRef]

S. Cueff, C. Labbé, L. Khomenkova, O. Jambois, P. Pellegrino, B. Garrido, C. Frilay, R. Rizk, “Silicon-rich oxynitride hosts for 1.5 μm Er3+ emission fabricated by reactive and standard RF magnetron sputtering,” Mater. Sci. Eng. B: Adv. Funct. Solid-State Mater. 177(10), 725–728 (2012).
[CrossRef]

Jin, L.

L. Jin, D. Li, L. Xiang, F. Wang, D. Yang, D. Que, “Energy transfer from luminescent centers to Er3+ in erbium-doped silicon-rich oxide films,” Nanoscale Res. Lett. 8(1), 366 (2013).
[CrossRef] [PubMed]

L. Xu, L. Jin, D. Li, D. Yang, “Effects of excess silicon on the 1540 nm Er3+ luminescence in silicon rich oxynitride films,” Appl. Phys. Lett. 103(7), 071101 (2013).
[CrossRef]

Kanzawa, Y.

M. Fujii, M. Yoshida, Y. Kanzawa, S. Hayashi, K. Yamamoto, “1.54 μm photoluminescence of Er3+ doped into SiO2 films containing Si nanocrystals: Evidence for energy transfer from Si nanocrystals to Er3+,” Appl. Phys. Lett. 71(9), 1198–1200 (1997).
[CrossRef]

Kenyon, A. J.

C. J. Oton, W. H. Loh, A. J. Kenyon, “Er3+ excited state absorption and the low fraction of nanocluster-excitable Er3+ in SiOx,” Appl. Phys. Lett. 89(3), 031116 (2006).
[CrossRef]

A. J. Kenyon, P. F. Trwoga, M. Federighi, C. W. Pitt, “Optical properties of PECVD erbium-doped silicon-rich silica: evidence for energy transfer between silicon microclusters and erbium ions,” J. Phys. Condens. Matter 6(21), L319–L324 (1994).
[CrossRef]

Khomenkova, L.

S. Cueff, C. Labbé, L. Khomenkova, O. Jambois, P. Pellegrino, B. Garrido, C. Frilay, R. Rizk, “Silicon-rich oxynitride hosts for 1.5 μm Er3+ emission fabricated by reactive and standard RF magnetron sputtering,” Mater. Sci. Eng. B: Adv. Funct. Solid-State Mater. 177(10), 725–728 (2012).
[CrossRef]

K. Hijazi, R. Rizk, J. Cardin, L. Khomenkova, F. Gourbilleau, “Towards an optimum coupling between Er ions and Si-based sensitizers for integrated active photonics,” J. Appl. Phys. 106(2), 024311 (2009).
[CrossRef]

Kik, P. G.

O. Savchyn, P. G. Kik, R. M. Todi, K. R. Coffey, “Effect of hydrogen passivation on luminescence-center-mediated Er excitation in Si-rich SiO2 with and without Si nanocrystals,” Phys. Rev. B 77(20), 205438 (2008).
[CrossRef]

O. Savchyn, F. R. Ruhge, P. G. Kik, R. M. Todi, K. R. Coffey, H. Nukala, H. Heinrich, “Luminescence-center-mediated excitation as the dominant Er sensitization mechanism in Er-doped silicon-rich SiO2 films,” Phys. Rev. B 76(19), 195419 (2007).
[CrossRef]

Klik, M.

M. Wojdak, M. Klik, M. Forcales, O. B. Gusev, T. Gregorkiewicz, D. Pacifici, G. Franzò, F. Priolo, F. Iacona, “Sensitization of Er luminescence by Si nanoclusters,” Phys. Rev. B 69(23), 233315 (2004).
[CrossRef]

Kucheyev, S. O.

S. Yerci, R. Li, S. O. Kucheyev, T. van Buuren, S. N. Basu, L. Dal Negro, “Energy transfer and 1.54 μm emission in amorphous silicon nitride films,” Appl. Phys. Lett. 95(3), 031107 (2009).
[CrossRef]

Kurvits, J. A.

S. Cueff, J. Manel Ramírez, J. A. Kurvits, Y. Berencén, R. Zia, B. Garrido, R. Rizk, C. Labbé, “Electroluminescence efficiencies of erbium in silicon-based hosts,” Appl. Phys. Lett. 103(19), 191109 (2013).
[CrossRef]

Labbé, C.

S. Cueff, J. Manel Ramírez, J. A. Kurvits, Y. Berencén, R. Zia, B. Garrido, R. Rizk, C. Labbé, “Electroluminescence efficiencies of erbium in silicon-based hosts,” Appl. Phys. Lett. 103(19), 191109 (2013).
[CrossRef]

S. Cueff, C. Labbé, L. Khomenkova, O. Jambois, P. Pellegrino, B. Garrido, C. Frilay, R. Rizk, “Silicon-rich oxynitride hosts for 1.5 μm Er3+ emission fabricated by reactive and standard RF magnetron sputtering,” Mater. Sci. Eng. B: Adv. Funct. Solid-State Mater. 177(10), 725–728 (2012).
[CrossRef]

Lenz, F.

F. Lenz, A. Hryciw, R. DeCorby, A. Meldrum, “Reversing the temperature dependence of the sensitized Er3+ luminescence intensity,” Appl. Phys. Lett. 95(9), 091909 (2009).
[CrossRef]

Li, D.

L. Jin, D. Li, L. Xiang, F. Wang, D. Yang, D. Que, “Energy transfer from luminescent centers to Er3+ in erbium-doped silicon-rich oxide films,” Nanoscale Res. Lett. 8(1), 366 (2013).
[CrossRef] [PubMed]

L. Xu, L. Jin, D. Li, D. Yang, “Effects of excess silicon on the 1540 nm Er3+ luminescence in silicon rich oxynitride films,” Appl. Phys. Lett. 103(7), 071101 (2013).
[CrossRef]

Li, R.

S. Yerci, R. Li, S. O. Kucheyev, T. van Buuren, S. N. Basu, L. Dal Negro, “Energy transfer and 1.54 μm emission in amorphous silicon nitride films,” Appl. Phys. Lett. 95(3), 031107 (2009).
[CrossRef]

Loh, W. H.

C. J. Oton, W. H. Loh, A. J. Kenyon, “Er3+ excited state absorption and the low fraction of nanocluster-excitable Er3+ in SiOx,” Appl. Phys. Lett. 89(3), 031116 (2006).
[CrossRef]

Lysenko, V. S.

A. Nazarov, J. M. Sun, W. Skorupa, R. A. Yankov, I. N. Osiyuk, I. P. Tjagulskii, V. S. Lysenko, T. Gebel, “Light emission and charge trapping in Er-doped silicon dioxide films containing silicon nanocrystals,” Appl. Phys. Lett. 86(15), 151914 (2005).
[CrossRef]

Manel Ramírez, J.

S. Cueff, J. Manel Ramírez, J. A. Kurvits, Y. Berencén, R. Zia, B. Garrido, R. Rizk, C. Labbé, “Electroluminescence efficiencies of erbium in silicon-based hosts,” Appl. Phys. Lett. 103(19), 191109 (2013).
[CrossRef]

Marconi, A.

O. Jambois, J. M. Ramírez, Y. Berencén, D. Navarro-Urrios, A. Anopchenko, A. Marconi, N. Prtljaga, A. Tengattini, P. Pellegrino, N. Daldosso, L. Pavesi, J.-P. Colonna, J.-M. Fedeli, B. Garrido, “Effect of the annealing treatments on the electroluminescence efficiency of SiO2 layers doped with Si and Er,” J. Phys. D Appl. Phys. 45(4), 045103 (2012).
[CrossRef]

J. M. Ramíırez, F. Ferrarese Lupi, O. Jambois, Y. Berencén, D. Navarro-Urrios, A. Anopchenko, A. Marconi, N. Prtljaga, A. Tengattini, L. Pavesi, J. P. Colonna, J. M. Fedeli, B. Garrido, “Erbium emission in MOS light emitting devices: from energy transfer to direct impact excitation,” Nanotechnology 23(12), 125203 (2012).
[CrossRef] [PubMed]

A. Anopchenko, A. Tengattini, A. Marconi, N. Prtljaga, J. M. Ramírez, O. Jambois, Y. Berencén, D. Navarro-Urrios, B. Garrido, F. Milesi, J.-P. Colonna, J.-M. Fedeli, L. Pavesi, “Bipolar pulsed excitation of erbium-doped nanosilicon light emitting diodes,” J. Appl. Phys. 111(6), 063102 (2012).
[CrossRef]

Meldrum, A.

F. Lenz, A. Hryciw, R. DeCorby, A. Meldrum, “Reversing the temperature dependence of the sensitized Er3+ luminescence intensity,” Appl. Phys. Lett. 95(9), 091909 (2009).
[CrossRef]

Milesi, F.

A. Anopchenko, A. Tengattini, A. Marconi, N. Prtljaga, J. M. Ramírez, O. Jambois, Y. Berencén, D. Navarro-Urrios, B. Garrido, F. Milesi, J.-P. Colonna, J.-M. Fedeli, L. Pavesi, “Bipolar pulsed excitation of erbium-doped nanosilicon light emitting diodes,” J. Appl. Phys. 111(6), 063102 (2012).
[CrossRef]

Navarro-Urrios, D.

A. Anopchenko, A. Tengattini, A. Marconi, N. Prtljaga, J. M. Ramírez, O. Jambois, Y. Berencén, D. Navarro-Urrios, B. Garrido, F. Milesi, J.-P. Colonna, J.-M. Fedeli, L. Pavesi, “Bipolar pulsed excitation of erbium-doped nanosilicon light emitting diodes,” J. Appl. Phys. 111(6), 063102 (2012).
[CrossRef]

J. M. Ramíırez, F. Ferrarese Lupi, O. Jambois, Y. Berencén, D. Navarro-Urrios, A. Anopchenko, A. Marconi, N. Prtljaga, A. Tengattini, L. Pavesi, J. P. Colonna, J. M. Fedeli, B. Garrido, “Erbium emission in MOS light emitting devices: from energy transfer to direct impact excitation,” Nanotechnology 23(12), 125203 (2012).
[CrossRef] [PubMed]

O. Jambois, J. M. Ramírez, Y. Berencén, D. Navarro-Urrios, A. Anopchenko, A. Marconi, N. Prtljaga, A. Tengattini, P. Pellegrino, N. Daldosso, L. Pavesi, J.-P. Colonna, J.-M. Fedeli, B. Garrido, “Effect of the annealing treatments on the electroluminescence efficiency of SiO2 layers doped with Si and Er,” J. Phys. D Appl. Phys. 45(4), 045103 (2012).
[CrossRef]

N. Prtljaga, D. Navarro-Urrios, A. Tengattini, A. Anopchenko, J. M. Ramírez, J. M. Rebled, S. Estradé, J. P. Colonna, J. M. Fedeli, B. Garrido, L. Pavesi, “Limit to the erbium ions emission in silicon-rich oxide films by erbium ion clustering,” Opt. Mater. Express 2(9), 1278–1285 (2012).
[CrossRef]

B. Garrido, C. García, S. Y. Seo, P. Pellegrino, D. Navarro-Urrios, N. Daldosso, L. Pavesi, F. Gourbilleau, R. Rizk, “Excitable Er fraction and quenching phenomena in Er-doped SiO2 layers containing Si nanoclusters,” Phys. Rev. B 76(24), 245308 (2007).
[CrossRef]

B. Garrido, C. García, P. Pellegrino, D. Navarro-Urrios, N. Daldosso, L. Pavesi, F. Gourbilleau, R. Rizk, “Distance dependent interaction as the limiting factor for Si nanocluster to Er energy transfer in silica,” Appl. Phys. Lett. 89(16), 163103 (2006).
[CrossRef]

Nazarov, A.

A. Nazarov, J. M. Sun, W. Skorupa, R. A. Yankov, I. N. Osiyuk, I. P. Tjagulskii, V. S. Lysenko, T. Gebel, “Light emission and charge trapping in Er-doped silicon dioxide films containing silicon nanocrystals,” Appl. Phys. Lett. 86(15), 151914 (2005).
[CrossRef]

Nukala, H.

O. Savchyn, F. R. Ruhge, P. G. Kik, R. M. Todi, K. R. Coffey, H. Nukala, H. Heinrich, “Luminescence-center-mediated excitation as the dominant Er sensitization mechanism in Er-doped silicon-rich SiO2 films,” Phys. Rev. B 76(19), 195419 (2007).
[CrossRef]

Osiyuk, I. N.

A. Nazarov, J. M. Sun, W. Skorupa, R. A. Yankov, I. N. Osiyuk, I. P. Tjagulskii, V. S. Lysenko, T. Gebel, “Light emission and charge trapping in Er-doped silicon dioxide films containing silicon nanocrystals,” Appl. Phys. Lett. 86(15), 151914 (2005).
[CrossRef]

Oton, C. J.

C. J. Oton, W. H. Loh, A. J. Kenyon, “Er3+ excited state absorption and the low fraction of nanocluster-excitable Er3+ in SiOx,” Appl. Phys. Lett. 89(3), 031116 (2006).
[CrossRef]

Pacifici, D.

M. Wojdak, M. Klik, M. Forcales, O. B. Gusev, T. Gregorkiewicz, D. Pacifici, G. Franzò, F. Priolo, F. Iacona, “Sensitization of Er luminescence by Si nanoclusters,” Phys. Rev. B 69(23), 233315 (2004).
[CrossRef]

F. Priolo, G. Franzò, D. Pacifici, V. Vinciguerra, F. Iacona, A. Irrera, “Role of the energy transfer in the optical properties of undoped and Er-doped interacting Si nanocrystals,” J. Appl. Phys. 89(1), 264–272 (2001).
[CrossRef]

Pavesi, L.

A. Anopchenko, A. Tengattini, A. Marconi, N. Prtljaga, J. M. Ramírez, O. Jambois, Y. Berencén, D. Navarro-Urrios, B. Garrido, F. Milesi, J.-P. Colonna, J.-M. Fedeli, L. Pavesi, “Bipolar pulsed excitation of erbium-doped nanosilicon light emitting diodes,” J. Appl. Phys. 111(6), 063102 (2012).
[CrossRef]

N. Prtljaga, D. Navarro-Urrios, A. Tengattini, A. Anopchenko, J. M. Ramírez, J. M. Rebled, S. Estradé, J. P. Colonna, J. M. Fedeli, B. Garrido, L. Pavesi, “Limit to the erbium ions emission in silicon-rich oxide films by erbium ion clustering,” Opt. Mater. Express 2(9), 1278–1285 (2012).
[CrossRef]

J. M. Ramíırez, F. Ferrarese Lupi, O. Jambois, Y. Berencén, D. Navarro-Urrios, A. Anopchenko, A. Marconi, N. Prtljaga, A. Tengattini, L. Pavesi, J. P. Colonna, J. M. Fedeli, B. Garrido, “Erbium emission in MOS light emitting devices: from energy transfer to direct impact excitation,” Nanotechnology 23(12), 125203 (2012).
[CrossRef] [PubMed]

O. Jambois, J. M. Ramírez, Y. Berencén, D. Navarro-Urrios, A. Anopchenko, A. Marconi, N. Prtljaga, A. Tengattini, P. Pellegrino, N. Daldosso, L. Pavesi, J.-P. Colonna, J.-M. Fedeli, B. Garrido, “Effect of the annealing treatments on the electroluminescence efficiency of SiO2 layers doped with Si and Er,” J. Phys. D Appl. Phys. 45(4), 045103 (2012).
[CrossRef]

B. Garrido, C. García, S. Y. Seo, P. Pellegrino, D. Navarro-Urrios, N. Daldosso, L. Pavesi, F. Gourbilleau, R. Rizk, “Excitable Er fraction and quenching phenomena in Er-doped SiO2 layers containing Si nanoclusters,” Phys. Rev. B 76(24), 245308 (2007).
[CrossRef]

B. Garrido, C. García, P. Pellegrino, D. Navarro-Urrios, N. Daldosso, L. Pavesi, F. Gourbilleau, R. Rizk, “Distance dependent interaction as the limiting factor for Si nanocluster to Er energy transfer in silica,” Appl. Phys. Lett. 89(16), 163103 (2006).
[CrossRef]

Pellegrino, P.

O. Jambois, J. M. Ramírez, Y. Berencén, D. Navarro-Urrios, A. Anopchenko, A. Marconi, N. Prtljaga, A. Tengattini, P. Pellegrino, N. Daldosso, L. Pavesi, J.-P. Colonna, J.-M. Fedeli, B. Garrido, “Effect of the annealing treatments on the electroluminescence efficiency of SiO2 layers doped with Si and Er,” J. Phys. D Appl. Phys. 45(4), 045103 (2012).
[CrossRef]

S. Cueff, C. Labbé, L. Khomenkova, O. Jambois, P. Pellegrino, B. Garrido, C. Frilay, R. Rizk, “Silicon-rich oxynitride hosts for 1.5 μm Er3+ emission fabricated by reactive and standard RF magnetron sputtering,” Mater. Sci. Eng. B: Adv. Funct. Solid-State Mater. 177(10), 725–728 (2012).
[CrossRef]

B. Garrido, C. García, S. Y. Seo, P. Pellegrino, D. Navarro-Urrios, N. Daldosso, L. Pavesi, F. Gourbilleau, R. Rizk, “Excitable Er fraction and quenching phenomena in Er-doped SiO2 layers containing Si nanoclusters,” Phys. Rev. B 76(24), 245308 (2007).
[CrossRef]

B. Garrido, C. García, P. Pellegrino, D. Navarro-Urrios, N. Daldosso, L. Pavesi, F. Gourbilleau, R. Rizk, “Distance dependent interaction as the limiting factor for Si nanocluster to Er energy transfer in silica,” Appl. Phys. Lett. 89(16), 163103 (2006).
[CrossRef]

Pitt, C. W.

A. J. Kenyon, P. F. Trwoga, M. Federighi, C. W. Pitt, “Optical properties of PECVD erbium-doped silicon-rich silica: evidence for energy transfer between silicon microclusters and erbium ions,” J. Phys. Condens. Matter 6(21), L319–L324 (1994).
[CrossRef]

Polman, A.

A. Polman, “Erbium implanted thin film photonic materials,” J. Appl. Phys. 82(1), 1–39 (1997).
[CrossRef] [PubMed]

Priolo, F.

M. Wojdak, M. Klik, M. Forcales, O. B. Gusev, T. Gregorkiewicz, D. Pacifici, G. Franzò, F. Priolo, F. Iacona, “Sensitization of Er luminescence by Si nanoclusters,” Phys. Rev. B 69(23), 233315 (2004).
[CrossRef]

F. Priolo, G. Franzò, D. Pacifici, V. Vinciguerra, F. Iacona, A. Irrera, “Role of the energy transfer in the optical properties of undoped and Er-doped interacting Si nanocrystals,” J. Appl. Phys. 89(1), 264–272 (2001).
[CrossRef]

Prtljaga, N.

A. Anopchenko, A. Tengattini, A. Marconi, N. Prtljaga, J. M. Ramírez, O. Jambois, Y. Berencén, D. Navarro-Urrios, B. Garrido, F. Milesi, J.-P. Colonna, J.-M. Fedeli, L. Pavesi, “Bipolar pulsed excitation of erbium-doped nanosilicon light emitting diodes,” J. Appl. Phys. 111(6), 063102 (2012).
[CrossRef]

N. Prtljaga, D. Navarro-Urrios, A. Tengattini, A. Anopchenko, J. M. Ramírez, J. M. Rebled, S. Estradé, J. P. Colonna, J. M. Fedeli, B. Garrido, L. Pavesi, “Limit to the erbium ions emission in silicon-rich oxide films by erbium ion clustering,” Opt. Mater. Express 2(9), 1278–1285 (2012).
[CrossRef]

O. Jambois, J. M. Ramírez, Y. Berencén, D. Navarro-Urrios, A. Anopchenko, A. Marconi, N. Prtljaga, A. Tengattini, P. Pellegrino, N. Daldosso, L. Pavesi, J.-P. Colonna, J.-M. Fedeli, B. Garrido, “Effect of the annealing treatments on the electroluminescence efficiency of SiO2 layers doped with Si and Er,” J. Phys. D Appl. Phys. 45(4), 045103 (2012).
[CrossRef]

J. M. Ramíırez, F. Ferrarese Lupi, O. Jambois, Y. Berencén, D. Navarro-Urrios, A. Anopchenko, A. Marconi, N. Prtljaga, A. Tengattini, L. Pavesi, J. P. Colonna, J. M. Fedeli, B. Garrido, “Erbium emission in MOS light emitting devices: from energy transfer to direct impact excitation,” Nanotechnology 23(12), 125203 (2012).
[CrossRef] [PubMed]

Que, D.

L. Jin, D. Li, L. Xiang, F. Wang, D. Yang, D. Que, “Energy transfer from luminescent centers to Er3+ in erbium-doped silicon-rich oxide films,” Nanoscale Res. Lett. 8(1), 366 (2013).
[CrossRef] [PubMed]

Ramíirez, J. M.

J. M. Ramíırez, F. Ferrarese Lupi, O. Jambois, Y. Berencén, D. Navarro-Urrios, A. Anopchenko, A. Marconi, N. Prtljaga, A. Tengattini, L. Pavesi, J. P. Colonna, J. M. Fedeli, B. Garrido, “Erbium emission in MOS light emitting devices: from energy transfer to direct impact excitation,” Nanotechnology 23(12), 125203 (2012).
[CrossRef] [PubMed]

Ramírez, J. M.

O. Jambois, J. M. Ramírez, Y. Berencén, D. Navarro-Urrios, A. Anopchenko, A. Marconi, N. Prtljaga, A. Tengattini, P. Pellegrino, N. Daldosso, L. Pavesi, J.-P. Colonna, J.-M. Fedeli, B. Garrido, “Effect of the annealing treatments on the electroluminescence efficiency of SiO2 layers doped with Si and Er,” J. Phys. D Appl. Phys. 45(4), 045103 (2012).
[CrossRef]

N. Prtljaga, D. Navarro-Urrios, A. Tengattini, A. Anopchenko, J. M. Ramírez, J. M. Rebled, S. Estradé, J. P. Colonna, J. M. Fedeli, B. Garrido, L. Pavesi, “Limit to the erbium ions emission in silicon-rich oxide films by erbium ion clustering,” Opt. Mater. Express 2(9), 1278–1285 (2012).
[CrossRef]

A. Anopchenko, A. Tengattini, A. Marconi, N. Prtljaga, J. M. Ramírez, O. Jambois, Y. Berencén, D. Navarro-Urrios, B. Garrido, F. Milesi, J.-P. Colonna, J.-M. Fedeli, L. Pavesi, “Bipolar pulsed excitation of erbium-doped nanosilicon light emitting diodes,” J. Appl. Phys. 111(6), 063102 (2012).
[CrossRef]

Rebib, F.

F. Rebib, E. Tomasella, M. Dubois, J. Cellier, T. Sauvage, M. Jacquet, “Structural and optical investigations of SiOxNy thin films deposited by R.F. sputtering,” Surf. Coat. Tech. 200(1–4), 330–333 (2005).
[CrossRef]

Rebled, J. M.

Rinnert, H.

E. Steveler, H. Rinnert, X. Devaux, M. Dossot, M. Vergnat, “Indirect excitation of Er3+ ions in silicon nitride films prepared by reactive evaporation,” Appl. Phys. Lett. 97(22), 221902 (2010).
[CrossRef]

Rizk, R.

S. Cueff, J. Manel Ramírez, J. A. Kurvits, Y. Berencén, R. Zia, B. Garrido, R. Rizk, C. Labbé, “Electroluminescence efficiencies of erbium in silicon-based hosts,” Appl. Phys. Lett. 103(19), 191109 (2013).
[CrossRef]

S. Cueff, C. Labbé, L. Khomenkova, O. Jambois, P. Pellegrino, B. Garrido, C. Frilay, R. Rizk, “Silicon-rich oxynitride hosts for 1.5 μm Er3+ emission fabricated by reactive and standard RF magnetron sputtering,” Mater. Sci. Eng. B: Adv. Funct. Solid-State Mater. 177(10), 725–728 (2012).
[CrossRef]

K. Hijazi, R. Rizk, J. Cardin, L. Khomenkova, F. Gourbilleau, “Towards an optimum coupling between Er ions and Si-based sensitizers for integrated active photonics,” J. Appl. Phys. 106(2), 024311 (2009).
[CrossRef]

B. Garrido, C. García, S. Y. Seo, P. Pellegrino, D. Navarro-Urrios, N. Daldosso, L. Pavesi, F. Gourbilleau, R. Rizk, “Excitable Er fraction and quenching phenomena in Er-doped SiO2 layers containing Si nanoclusters,” Phys. Rev. B 76(24), 245308 (2007).
[CrossRef]

B. Garrido, C. García, P. Pellegrino, D. Navarro-Urrios, N. Daldosso, L. Pavesi, F. Gourbilleau, R. Rizk, “Distance dependent interaction as the limiting factor for Si nanocluster to Er energy transfer in silica,” Appl. Phys. Lett. 89(16), 163103 (2006).
[CrossRef]

Ruhge, F. R.

O. Savchyn, F. R. Ruhge, P. G. Kik, R. M. Todi, K. R. Coffey, H. Nukala, H. Heinrich, “Luminescence-center-mediated excitation as the dominant Er sensitization mechanism in Er-doped silicon-rich SiO2 films,” Phys. Rev. B 76(19), 195419 (2007).
[CrossRef]

Sauvage, T.

F. Rebib, E. Tomasella, M. Dubois, J. Cellier, T. Sauvage, M. Jacquet, “Structural and optical investigations of SiOxNy thin films deposited by R.F. sputtering,” Surf. Coat. Tech. 200(1–4), 330–333 (2005).
[CrossRef]

Savchyn, O.

O. Savchyn, P. G. Kik, R. M. Todi, K. R. Coffey, “Effect of hydrogen passivation on luminescence-center-mediated Er excitation in Si-rich SiO2 with and without Si nanocrystals,” Phys. Rev. B 77(20), 205438 (2008).
[CrossRef]

O. Savchyn, F. R. Ruhge, P. G. Kik, R. M. Todi, K. R. Coffey, H. Nukala, H. Heinrich, “Luminescence-center-mediated excitation as the dominant Er sensitization mechanism in Er-doped silicon-rich SiO2 films,” Phys. Rev. B 76(19), 195419 (2007).
[CrossRef]

Seo, S. Y.

B. Garrido, C. García, S. Y. Seo, P. Pellegrino, D. Navarro-Urrios, N. Daldosso, L. Pavesi, F. Gourbilleau, R. Rizk, “Excitable Er fraction and quenching phenomena in Er-doped SiO2 layers containing Si nanoclusters,” Phys. Rev. B 76(24), 245308 (2007).
[CrossRef]

Skorupa, W.

A. Nazarov, J. M. Sun, W. Skorupa, R. A. Yankov, I. N. Osiyuk, I. P. Tjagulskii, V. S. Lysenko, T. Gebel, “Light emission and charge trapping in Er-doped silicon dioxide films containing silicon nanocrystals,” Appl. Phys. Lett. 86(15), 151914 (2005).
[CrossRef]

Song, C.

X. Wang, R. Huang, C. Song, Y. Guo, J. Song, “Effect of barrier layers on electroluminescence from Si/SiOxNy multilayer structures,” Appl. Phys. Lett. 102(8), 081114 (2013).
[CrossRef]

Song, J.

X. Wang, R. Huang, C. Song, Y. Guo, J. Song, “Effect of barrier layers on electroluminescence from Si/SiOxNy multilayer structures,” Appl. Phys. Lett. 102(8), 081114 (2013).
[CrossRef]

Steveler, E.

E. Steveler, H. Rinnert, X. Devaux, M. Dossot, M. Vergnat, “Indirect excitation of Er3+ ions in silicon nitride films prepared by reactive evaporation,” Appl. Phys. Lett. 97(22), 221902 (2010).
[CrossRef]

Sun, J. M.

A. Nazarov, J. M. Sun, W. Skorupa, R. A. Yankov, I. N. Osiyuk, I. P. Tjagulskii, V. S. Lysenko, T. Gebel, “Light emission and charge trapping in Er-doped silicon dioxide films containing silicon nanocrystals,” Appl. Phys. Lett. 86(15), 151914 (2005).
[CrossRef]

Tengattini, A.

A. Anopchenko, A. Tengattini, A. Marconi, N. Prtljaga, J. M. Ramírez, O. Jambois, Y. Berencén, D. Navarro-Urrios, B. Garrido, F. Milesi, J.-P. Colonna, J.-M. Fedeli, L. Pavesi, “Bipolar pulsed excitation of erbium-doped nanosilicon light emitting diodes,” J. Appl. Phys. 111(6), 063102 (2012).
[CrossRef]

N. Prtljaga, D. Navarro-Urrios, A. Tengattini, A. Anopchenko, J. M. Ramírez, J. M. Rebled, S. Estradé, J. P. Colonna, J. M. Fedeli, B. Garrido, L. Pavesi, “Limit to the erbium ions emission in silicon-rich oxide films by erbium ion clustering,” Opt. Mater. Express 2(9), 1278–1285 (2012).
[CrossRef]

J. M. Ramíırez, F. Ferrarese Lupi, O. Jambois, Y. Berencén, D. Navarro-Urrios, A. Anopchenko, A. Marconi, N. Prtljaga, A. Tengattini, L. Pavesi, J. P. Colonna, J. M. Fedeli, B. Garrido, “Erbium emission in MOS light emitting devices: from energy transfer to direct impact excitation,” Nanotechnology 23(12), 125203 (2012).
[CrossRef] [PubMed]

O. Jambois, J. M. Ramírez, Y. Berencén, D. Navarro-Urrios, A. Anopchenko, A. Marconi, N. Prtljaga, A. Tengattini, P. Pellegrino, N. Daldosso, L. Pavesi, J.-P. Colonna, J.-M. Fedeli, B. Garrido, “Effect of the annealing treatments on the electroluminescence efficiency of SiO2 layers doped with Si and Er,” J. Phys. D Appl. Phys. 45(4), 045103 (2012).
[CrossRef]

Tjagulskii, I. P.

A. Nazarov, J. M. Sun, W. Skorupa, R. A. Yankov, I. N. Osiyuk, I. P. Tjagulskii, V. S. Lysenko, T. Gebel, “Light emission and charge trapping in Er-doped silicon dioxide films containing silicon nanocrystals,” Appl. Phys. Lett. 86(15), 151914 (2005).
[CrossRef]

Todi, R. M.

O. Savchyn, P. G. Kik, R. M. Todi, K. R. Coffey, “Effect of hydrogen passivation on luminescence-center-mediated Er excitation in Si-rich SiO2 with and without Si nanocrystals,” Phys. Rev. B 77(20), 205438 (2008).
[CrossRef]

O. Savchyn, F. R. Ruhge, P. G. Kik, R. M. Todi, K. R. Coffey, H. Nukala, H. Heinrich, “Luminescence-center-mediated excitation as the dominant Er sensitization mechanism in Er-doped silicon-rich SiO2 films,” Phys. Rev. B 76(19), 195419 (2007).
[CrossRef]

Tomasella, E.

F. Rebib, E. Tomasella, M. Dubois, J. Cellier, T. Sauvage, M. Jacquet, “Structural and optical investigations of SiOxNy thin films deposited by R.F. sputtering,” Surf. Coat. Tech. 200(1–4), 330–333 (2005).
[CrossRef]

Trwoga, P. F.

A. J. Kenyon, P. F. Trwoga, M. Federighi, C. W. Pitt, “Optical properties of PECVD erbium-doped silicon-rich silica: evidence for energy transfer between silicon microclusters and erbium ions,” J. Phys. Condens. Matter 6(21), L319–L324 (1994).
[CrossRef]

van Buuren, T.

S. Yerci, R. Li, S. O. Kucheyev, T. van Buuren, S. N. Basu, L. Dal Negro, “Energy transfer and 1.54 μm emission in amorphous silicon nitride films,” Appl. Phys. Lett. 95(3), 031107 (2009).
[CrossRef]

Vergnat, M.

E. Steveler, H. Rinnert, X. Devaux, M. Dossot, M. Vergnat, “Indirect excitation of Er3+ ions in silicon nitride films prepared by reactive evaporation,” Appl. Phys. Lett. 97(22), 221902 (2010).
[CrossRef]

Vinciguerra, V.

F. Priolo, G. Franzò, D. Pacifici, V. Vinciguerra, F. Iacona, A. Irrera, “Role of the energy transfer in the optical properties of undoped and Er-doped interacting Si nanocrystals,” J. Appl. Phys. 89(1), 264–272 (2001).
[CrossRef]

Wang, F.

L. Jin, D. Li, L. Xiang, F. Wang, D. Yang, D. Que, “Energy transfer from luminescent centers to Er3+ in erbium-doped silicon-rich oxide films,” Nanoscale Res. Lett. 8(1), 366 (2013).
[CrossRef] [PubMed]

Wang, X.

X. Wang, R. Huang, C. Song, Y. Guo, J. Song, “Effect of barrier layers on electroluminescence from Si/SiOxNy multilayer structures,” Appl. Phys. Lett. 102(8), 081114 (2013).
[CrossRef]

Wojdak, M.

M. Wojdak, M. Klik, M. Forcales, O. B. Gusev, T. Gregorkiewicz, D. Pacifici, G. Franzò, F. Priolo, F. Iacona, “Sensitization of Er luminescence by Si nanoclusters,” Phys. Rev. B 69(23), 233315 (2004).
[CrossRef]

Xiang, L.

L. Jin, D. Li, L. Xiang, F. Wang, D. Yang, D. Que, “Energy transfer from luminescent centers to Er3+ in erbium-doped silicon-rich oxide films,” Nanoscale Res. Lett. 8(1), 366 (2013).
[CrossRef] [PubMed]

Xu, L.

L. Xu, L. Jin, D. Li, D. Yang, “Effects of excess silicon on the 1540 nm Er3+ luminescence in silicon rich oxynitride films,” Appl. Phys. Lett. 103(7), 071101 (2013).
[CrossRef]

Yamamoto, K.

M. Fujii, M. Yoshida, Y. Kanzawa, S. Hayashi, K. Yamamoto, “1.54 μm photoluminescence of Er3+ doped into SiO2 films containing Si nanocrystals: Evidence for energy transfer from Si nanocrystals to Er3+,” Appl. Phys. Lett. 71(9), 1198–1200 (1997).
[CrossRef]

Yang, D.

L. Jin, D. Li, L. Xiang, F. Wang, D. Yang, D. Que, “Energy transfer from luminescent centers to Er3+ in erbium-doped silicon-rich oxide films,” Nanoscale Res. Lett. 8(1), 366 (2013).
[CrossRef] [PubMed]

L. Xu, L. Jin, D. Li, D. Yang, “Effects of excess silicon on the 1540 nm Er3+ luminescence in silicon rich oxynitride films,” Appl. Phys. Lett. 103(7), 071101 (2013).
[CrossRef]

Yankov, R. A.

A. Nazarov, J. M. Sun, W. Skorupa, R. A. Yankov, I. N. Osiyuk, I. P. Tjagulskii, V. S. Lysenko, T. Gebel, “Light emission and charge trapping in Er-doped silicon dioxide films containing silicon nanocrystals,” Appl. Phys. Lett. 86(15), 151914 (2005).
[CrossRef]

Yerci, S.

S. Yerci, R. Li, S. O. Kucheyev, T. van Buuren, S. N. Basu, L. Dal Negro, “Energy transfer and 1.54 μm emission in amorphous silicon nitride films,” Appl. Phys. Lett. 95(3), 031107 (2009).
[CrossRef]

Yoshida, M.

M. Fujii, M. Yoshida, Y. Kanzawa, S. Hayashi, K. Yamamoto, “1.54 μm photoluminescence of Er3+ doped into SiO2 films containing Si nanocrystals: Evidence for energy transfer from Si nanocrystals to Er3+,” Appl. Phys. Lett. 71(9), 1198–1200 (1997).
[CrossRef]

Zia, R.

S. Cueff, J. Manel Ramírez, J. A. Kurvits, Y. Berencén, R. Zia, B. Garrido, R. Rizk, C. Labbé, “Electroluminescence efficiencies of erbium in silicon-based hosts,” Appl. Phys. Lett. 103(19), 191109 (2013).
[CrossRef]

Appl. Phys. Lett. (10)

M. Fujii, M. Yoshida, Y. Kanzawa, S. Hayashi, K. Yamamoto, “1.54 μm photoluminescence of Er3+ doped into SiO2 films containing Si nanocrystals: Evidence for energy transfer from Si nanocrystals to Er3+,” Appl. Phys. Lett. 71(9), 1198–1200 (1997).
[CrossRef]

L. Xu, L. Jin, D. Li, D. Yang, “Effects of excess silicon on the 1540 nm Er3+ luminescence in silicon rich oxynitride films,” Appl. Phys. Lett. 103(7), 071101 (2013).
[CrossRef]

X. Wang, R. Huang, C. Song, Y. Guo, J. Song, “Effect of barrier layers on electroluminescence from Si/SiOxNy multilayer structures,” Appl. Phys. Lett. 102(8), 081114 (2013).
[CrossRef]

A. Nazarov, J. M. Sun, W. Skorupa, R. A. Yankov, I. N. Osiyuk, I. P. Tjagulskii, V. S. Lysenko, T. Gebel, “Light emission and charge trapping in Er-doped silicon dioxide films containing silicon nanocrystals,” Appl. Phys. Lett. 86(15), 151914 (2005).
[CrossRef]

S. Cueff, J. Manel Ramírez, J. A. Kurvits, Y. Berencén, R. Zia, B. Garrido, R. Rizk, C. Labbé, “Electroluminescence efficiencies of erbium in silicon-based hosts,” Appl. Phys. Lett. 103(19), 191109 (2013).
[CrossRef]

S. Yerci, R. Li, S. O. Kucheyev, T. van Buuren, S. N. Basu, L. Dal Negro, “Energy transfer and 1.54 μm emission in amorphous silicon nitride films,” Appl. Phys. Lett. 95(3), 031107 (2009).
[CrossRef]

C. J. Oton, W. H. Loh, A. J. Kenyon, “Er3+ excited state absorption and the low fraction of nanocluster-excitable Er3+ in SiOx,” Appl. Phys. Lett. 89(3), 031116 (2006).
[CrossRef]

B. Garrido, C. García, P. Pellegrino, D. Navarro-Urrios, N. Daldosso, L. Pavesi, F. Gourbilleau, R. Rizk, “Distance dependent interaction as the limiting factor for Si nanocluster to Er energy transfer in silica,” Appl. Phys. Lett. 89(16), 163103 (2006).
[CrossRef]

F. Lenz, A. Hryciw, R. DeCorby, A. Meldrum, “Reversing the temperature dependence of the sensitized Er3+ luminescence intensity,” Appl. Phys. Lett. 95(9), 091909 (2009).
[CrossRef]

E. Steveler, H. Rinnert, X. Devaux, M. Dossot, M. Vergnat, “Indirect excitation of Er3+ ions in silicon nitride films prepared by reactive evaporation,” Appl. Phys. Lett. 97(22), 221902 (2010).
[CrossRef]

J. Appl. Phys. (4)

K. Hijazi, R. Rizk, J. Cardin, L. Khomenkova, F. Gourbilleau, “Towards an optimum coupling between Er ions and Si-based sensitizers for integrated active photonics,” J. Appl. Phys. 106(2), 024311 (2009).
[CrossRef]

A. Anopchenko, A. Tengattini, A. Marconi, N. Prtljaga, J. M. Ramírez, O. Jambois, Y. Berencén, D. Navarro-Urrios, B. Garrido, F. Milesi, J.-P. Colonna, J.-M. Fedeli, L. Pavesi, “Bipolar pulsed excitation of erbium-doped nanosilicon light emitting diodes,” J. Appl. Phys. 111(6), 063102 (2012).
[CrossRef]

F. Priolo, G. Franzò, D. Pacifici, V. Vinciguerra, F. Iacona, A. Irrera, “Role of the energy transfer in the optical properties of undoped and Er-doped interacting Si nanocrystals,” J. Appl. Phys. 89(1), 264–272 (2001).
[CrossRef]

A. Polman, “Erbium implanted thin film photonic materials,” J. Appl. Phys. 82(1), 1–39 (1997).
[CrossRef] [PubMed]

J. Phys. Condens. Matter (1)

A. J. Kenyon, P. F. Trwoga, M. Federighi, C. W. Pitt, “Optical properties of PECVD erbium-doped silicon-rich silica: evidence for energy transfer between silicon microclusters and erbium ions,” J. Phys. Condens. Matter 6(21), L319–L324 (1994).
[CrossRef]

J. Phys. D Appl. Phys. (1)

O. Jambois, J. M. Ramírez, Y. Berencén, D. Navarro-Urrios, A. Anopchenko, A. Marconi, N. Prtljaga, A. Tengattini, P. Pellegrino, N. Daldosso, L. Pavesi, J.-P. Colonna, J.-M. Fedeli, B. Garrido, “Effect of the annealing treatments on the electroluminescence efficiency of SiO2 layers doped with Si and Er,” J. Phys. D Appl. Phys. 45(4), 045103 (2012).
[CrossRef]

Mater. Sci. Eng. B: Adv. Funct. Solid-State Mater. (1)

S. Cueff, C. Labbé, L. Khomenkova, O. Jambois, P. Pellegrino, B. Garrido, C. Frilay, R. Rizk, “Silicon-rich oxynitride hosts for 1.5 μm Er3+ emission fabricated by reactive and standard RF magnetron sputtering,” Mater. Sci. Eng. B: Adv. Funct. Solid-State Mater. 177(10), 725–728 (2012).
[CrossRef]

Nanoscale Res. Lett. (1)

L. Jin, D. Li, L. Xiang, F. Wang, D. Yang, D. Que, “Energy transfer from luminescent centers to Er3+ in erbium-doped silicon-rich oxide films,” Nanoscale Res. Lett. 8(1), 366 (2013).
[CrossRef] [PubMed]

Nanotechnology (1)

J. M. Ramíırez, F. Ferrarese Lupi, O. Jambois, Y. Berencén, D. Navarro-Urrios, A. Anopchenko, A. Marconi, N. Prtljaga, A. Tengattini, L. Pavesi, J. P. Colonna, J. M. Fedeli, B. Garrido, “Erbium emission in MOS light emitting devices: from energy transfer to direct impact excitation,” Nanotechnology 23(12), 125203 (2012).
[CrossRef] [PubMed]

Opt. Mater. Express (1)

Phys. Rev. B (4)

O. Savchyn, P. G. Kik, R. M. Todi, K. R. Coffey, “Effect of hydrogen passivation on luminescence-center-mediated Er excitation in Si-rich SiO2 with and without Si nanocrystals,” Phys. Rev. B 77(20), 205438 (2008).
[CrossRef]

O. Savchyn, F. R. Ruhge, P. G. Kik, R. M. Todi, K. R. Coffey, H. Nukala, H. Heinrich, “Luminescence-center-mediated excitation as the dominant Er sensitization mechanism in Er-doped silicon-rich SiO2 films,” Phys. Rev. B 76(19), 195419 (2007).
[CrossRef]

B. Garrido, C. García, S. Y. Seo, P. Pellegrino, D. Navarro-Urrios, N. Daldosso, L. Pavesi, F. Gourbilleau, R. Rizk, “Excitable Er fraction and quenching phenomena in Er-doped SiO2 layers containing Si nanoclusters,” Phys. Rev. B 76(24), 245308 (2007).
[CrossRef]

M. Wojdak, M. Klik, M. Forcales, O. B. Gusev, T. Gregorkiewicz, D. Pacifici, G. Franzò, F. Priolo, F. Iacona, “Sensitization of Er luminescence by Si nanoclusters,” Phys. Rev. B 69(23), 233315 (2004).
[CrossRef]

Surf. Coat. Tech. (1)

F. Rebib, E. Tomasella, M. Dubois, J. Cellier, T. Sauvage, M. Jacquet, “Structural and optical investigations of SiOxNy thin films deposited by R.F. sputtering,” Surf. Coat. Tech. 200(1–4), 330–333 (2005).
[CrossRef]

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Figures (2)

Fig. 1
Fig. 1

(a) Matrix-related PL spectra from Er:SRON films annealed at temperatures in the range of 600-1100 °C. The inset shows the cross sectional TEM image from the specimen annealed at 1100 °C. (b) Time resolved PL spectra recorded at 700 nm from the specimen annealed at 800 °C. The excitation wavelength is 325 nm.

Fig. 2
Fig. 2

(a) PL excitation spectra of Er3+ measured at 1540 nm. The PLE spectra measured at 750 nm for the 1100 °C annealed specimen is denoted by empty squares.(b) Er-related PL spectra of samples annealed at different temperatures for excitation at 325 nm. (c) Er3+ PL decay time τdec as a function of the annealing temperatures. The inset shows the evolution of integrated Er3+ PL intensity with temperatures in the 600 °C annealed specimen. (d) IPL/τdec as a function of the annealing temperatures for excitation at 325 nm and 980 nm (right hand scale).

Equations (2)

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IPLφσErNEr,sen τdec τrad
NEr,sen τrad φσEr IPL τdec

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