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Single chip super broadband InGaN/GaN LED enabled by nanostructured substrate

Stuart (Shizhuo) Yin, Chao Wang, Wenbin Zhu, Jimmy Yao, Jun Zou, Xiaoyan Lin, and Claire Luo

Open Access Open Access

Abstract

A new type of LED, single chip super broadband InGaN/GaN LED is presented in this paper. The LED is composed of an InGaN/GaN quantum well layer deposited on the nanostructured sapphire substrate, inscribed by femtosecond laser ablation. The super broadband emission is enabled due to the large variation of indium composition in a small local area so that different wavelengths can be emitted over a small area and the summation of these different emission wavelengths forms super broadband emission, which covers the entire visible spectral range. The result of this paper represents a major technological advance in white light LED lighting because it enables single chip white LED lighting without the need of phosphor down converter that can significantly improve the efficiency without the Stokes loss and reduce the cost.

© 2014 Optical Society of America

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Figures (9)
Fig. 1
Fig. 1 The schematic experimental setup for creating nanostructures on sapphire substrate.

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Fig. 2
Fig. 2 The experimentally measured spot size as a function of number of laser pulses under the femtosecond laser fluence of 5 J/cm2.

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Fig. 3
Fig. 3 The experimentally measured ablation depth as a function of number of laser pulses under the femtosecond laser irradiation of 5 J/cm2.

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Fig. 4
Fig. 4 The surface morphology of the sapphire substrate after the femtosecond laser ablation treatment.

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Fig. 5
Fig. 5 The schematic of (a) the LED grown on the nanostructured sapphire substrate, and (b) the configuration of LED layers.

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Fig. 6
Fig. 6 The pictures of emitted light at different areas of the substrate. (a) blue light observed on the planar substrate area, (b) blue violet light observed on the nanostructured substrate area, (c) cyan light observed on the nanostructured area, and (d) green light observed on the nanostructured area.

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Fig. 7
Fig. 7 Electroluminescence emission spectra of the LED on the nanostructured sapphire substrate showing both blue and red shifts.

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Fig. 8
Fig. 8 The super broadband spectra generated by the InGaN/GaN LED grown on the nanostructured sapphire substrate. The designed spectrum is also displayed as a reference.

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Fig. 9
Fig. 9 A STEM image of quantum well of InGaN/GaN LED grown on nanostructured sapphire substrate.

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Tables (2)

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Table 1 Relative Composition of InGaN/GaN LED at the Location of Emitting Wavelength 470 nm

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Table 2 Indium Compositions at Different Wavelength Emission Regions

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