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Efficiency enhancement of homoepitaxial InGaN/GaN light-emitting diodes on free-standing GaN substrate with double embedded SiO2 photonic crystals

Tongbo Wei, Ziqiang Huo, Yonghui Zhang, Haiyang Zheng, Yu Chen, Jiankun Yang, Qiang Hu, Ruifei Duan, Junxi Wang, Yiping Zeng, and Jinmin Li

Open Access Open Access

Abstract

Homoepitaxially grown InGaN/GaN light emitting diodes (LEDs) with SiO2 nanodisks embedded in n-GaN and p-GaN as photonic crystal (PhC) structures by nanospherical-lens photolithography are presented and investigated. The introduction of SiO2 nanodisks doesn’t produce the new dislocations and doesn’t also result in the electrical deterioration of PhC LEDs. The light output power of homoepitaxial LEDs with embedded PhC and double PhC at 350 mA current is increased by 29.9% and 47.2%, respectively, compared to that without PhC. The corresponding light radiation patterns in PhC LEDs on GaN substrate show a narrow beam shape due to strong guided light extraction, with a view angle reduction of about 30°. The PhC LEDs are also analyzed in detail by finite-difference time-domain simulation (FDTD) to further reveal the emission characteristics.

© 2014 Optical Society of America

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Figures (5)
Fig. 1
Fig. 1 Schematic illustration of the process for the fabrication of embedded PhC and double PhC LEDs.

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Fig. 2
Fig. 2 (a) Cross-sectional view of embedded PhC of SiO2 nanodisks surrounded by n-GaN and (b) tilted top-view of p-GaN surface with top SiO2 PhC structure. (c) Cross-sectional TEM image of the LED with embedded SiO2 PhC. (d) is the magnified region of MQWs from PhC LED in (c).

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Fig. 3
Fig. 3 (a) The reverse and forward I-V characteristics of the LEDs without and with PhC structures on a logarithmic scale. Inset: corresponding enlarged forward I-V curves closed to the turn-on voltage. (b) Peak wavelength of the EL emission spectra of the LEDs at a current of 350 mA. (c) Optical output power (L-I) of these LEDs as a function of injection current.

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Fig. 4
Fig. 4 Normalized relative far-field emission patterns of the LEDs without and with SiO2 PhC structures at a driving current of 200 mA.

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Fig. 5
Fig. 5 (a) The schematic representation of the 2D FDTD simulation for the double PhC LED. FDTD simulation of light propagation in (b) LED without PhC, (c) LED with embedded PhC and (d) LED with double PhC on FS-GaN substrate.

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