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Optoelectrical characteristics of green light-emitting diodes containing thick InGaN wells with digitally grown InN/GaN

Chun-Ta Yu, Wei-Chih Lai, Cheng-Hsiung Yen, Hsu-Cheng Hsu, and Shoou-Jinn Chang

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Abstract

Compared with conventionally grown thin InGaN wells, thick InGaN wells with digitally grown InN/GaN exhibit superior optical properties. The activation energy (48 meV) of thick InGaN wells (generated by digital InN/GaN growth from temperature-dependent integrated photoluminescence intensity) is larger than the activation energy (25 meV) of conventionally grown thin InGaN wells. Moreover, thick InGaN wells with digitally grown InN/GaN exhibit a smaller σ value (the degree of localization effects) of 19 meV than that of conventionally grown thin InGaN wells (23 meV). Compared with green light-emitting diodes (LEDs) with conventional thin InGaN wells, the improvement in 20-A/cm2 output power for LEDs containing thick InGaN wells with digitally grown InN/GaN is approximately 23%.

© 2014 Optical Society of America

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Figures (8)
Fig. 1
Fig. 1 Schematic of the source-switching sequences of the MQW growth conditions for LEDs (a) I and (b) II. Axis scales are not in proportion.

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Fig. 2
Fig. 2 θ-2θ scan X-ray diffraction spectra of LEDs (a) I and (b) II. The satellite peaks are labeled with numbers. The lower curve is the simulation resulting from fitting the XRD data.

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Fig. 3
Fig. 3 TEM images of the InGaN/GaN MQWs for LEDs (a) I and (b) II.

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Fig. 4
Fig. 4 RT PL spectra of LEDs I and II.

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Fig. 5
Fig. 5 PL spectrum peak position and FWHM with respect to temperature for LEDs I and II. The solid lines are fitted to the experimental data points using Eq. (1).

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Fig. 6
Fig. 6 Arrhenius plots of the integrated PL intensity at different temperatures for LEDs I and II. For clarity, the curves have been shifted vertically. The solid lines are fitted to the experimental data points using Eq. (2).

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Fig. 7
Fig. 7 Light output power and EQE with respect to the injection current density for LEDs I and II.

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Fig. 8
Fig. 8 Emission wavelength with respect to injection current density for LEDs I and II.

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Equations (2)

Equations on this page are rendered with MathJax. Learn more.

E = E ( 0 ) − α T 2 β + T − σ 2 k B T ,
I ( T ) = I ( 0 ) 1 + A 1 exp ( − E A 1 k B T ) + A 2 exp ( − E A 2 k B T ) ,
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