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Type II GaSb quantum ring solar cells under concentrated sunlight

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Abstract

A type II GaSb quantum ring solar cell is fabricated and measured under the concentrated sunlight. The external quantum efficiency confirms the extended absorption from the quantum rings at long wavelength coinciding with the photoluminescence results. The short-circuit current of the quantum ring devices is 5.1% to 9.9% more than the GaAs reference's under various concentrations. While the quantum ring solar cell does not exceed its GaAs counterpart in efficiency under one-sun, the recovery of the open-circuit voltages at higher concentration helps to reverse the situation. A slightly higher efficiency (10.31% vs. 10.29%) is reported for the quantum ring device against the GaAs one.

© 2014 Optical Society of America

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Figures (4)

Fig. 1
Fig. 1 The band diagram of a GaSb QR in the GaAs material. The electron wavefunction (red) has less overlap with the hole wavefunction (blue), which would be beneficial for less recombination. Two bands of absorption are created: one for GaAs host material (GaAs) and the other for GaSb QR (GaSb), and the latter can effectively increase the photo-current of the device.
Fig. 2
Fig. 2 The EQE spectral response of the reference and GaSb QR samples. The inset is the PL data of the QR under 10K and room temperature.
Fig. 3
Fig. 3 The current-voltage (IV) characteristics of the reference and GaSb QR samples under (a) one-Sun and (b) 60 Sun.
Fig. 4
Fig. 4 (a) The power conversion efficiencies of the reference and GaSb QR samples versus different concentration factor. The dashed lines are for eye-guiding only. (b) The VOC under the same condition.

Tables (1)

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Table 1 Detailed Epitaxial Structures of Reference and GaSb QR Samples

Equations (1)

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V OC (X)= n k B T q ln( X J SC J 0 +1 ) V OC (1)+ n k B T q lnX( 1 0 0 1 )
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