Abstract

We report room-temperature Raman scattering studies of nominally undoped (100) GaAs1−xBix epitaxial layers exhibiting Bi-induced (p-type) longitudinal-optical-plasmon-coupled (LOPC) modes for 0.018 ≤ x ≤ 0.048. Redshifts in the GaAs-like optical modes due to alloying are evaluated and are paralleled by strong damping of the LOPC. The relative integrated Raman intensities of LO(Γ) and LOPC ALO/ALOPC are characteristic of heavily doped p-GaAs, with a remarkable near total screening of the LO(Γ) phonon (ALO/ALOPC → 0) for larger Bi concentrations. A method of spectral analysis is set out which yields estimates of hole concentrations in excess of 5 × 1017cm−3 and correlates with the Bi molar fraction. These findings are in general agreement with recent electrical transport measurements performed on the alloy, and while the absolute size of the hole concentrations differ, likely origins for the discrepancy are discussed. We conclude that the damped LO-phonon-hole-plasmon coupling phenomena plays a dominant role in Raman scattering from unpassivated nominally undoped GaAsBi.

© 2014 Optical Society of America

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  1. K. Oe, “Characteristics of semiconductor alloy GaAs1−xBix,” Jpn. J. Appl. Phys. 41, 2801–2806 (2002).
    [CrossRef]
  2. K. Alberi, O. D. Dubon, W. Walukiewicz, K. M. Yu, K. Bertulis, A. Krotkus, “Valence band anticrossing in GaAs1−xBix,” Appl. Phys. Lett. 91(5), 051909 (2007).
    [CrossRef]
  3. S. Francoeur, S. Tixier, E. Young, T. Tiedje, A. Mascarenhas, “Bi isoelectronic impurities in GaAs,” Phys. Rev. B 77(8), 085209 (2008).
    [CrossRef]
  4. G. Pettinari, A. Polimeni, M. Capizzi, H. Engelkamp, P. C. M. Christianen, J. C. Maan, A Patané, T. Tiedje, “Effects of Bi incorporation on the electronic properties of GaAs: Carrier masses, hole mobility, and Bi-induced acceptor states,” Phys. Status Solidi B 250(4), 779–786 (2013).
    [CrossRef]
  5. S. Francoeur, M. J. Seong, A. Mascarenhas, S. Tixier, M. Adamcyk, T. Tiedje, “Band gap of GaAs1−xBix, 0<x<3.6%,” Appl. Phys. Lett. 82(22), 3874 (2003).
    [CrossRef]
  6. J. Yoshida, T. Kita, O. Wada, K. Oe, “Temperature dependence of GaAs1−xBix band gap studied by photoreflectance spectroscopy,” Jpn. J. Appl. Phys. 42, 371–374 (2003).
    [CrossRef]
  7. B. Fluegel, S. Francoeur, A. Mascarenhas, S. Tixier, E. C. Young, T. Tiedje, “Giant spin-orbit bowing in GaAs1−xBix,” Phys. Rev. Lett. 97(6), 067205 (2006).
    [CrossRef] [PubMed]
  8. S. J. Sweeney, S. R. Jin, “Bismide-nitride alloys: Promising for efficient light emitting devices in the near-and mid-infrared,” J. Appl. Phys. 113(4), 043110 (2013).
    [CrossRef]
  9. K. Bertulis, A. Krotkus, G. Aleksejenko, V. Pačebutas, R. Adomavičius, G. Molis, S. Marcinkevičius, “GaBiAs: A material for optoelectronic terahertz devices,” Appl. Phys. Lett. 88(20), 201112 (2006).
    [CrossRef]
  10. S. Nargelas, K. Jaračiūnas, K. Bertulis, V. Pačebutas, “Hole diffusivity in GaAsBi alloys measured by a picosecond transient grating technique,” Appl. Phys. Lett. 98(8), 082115 (2011).
    [CrossRef]
  11. G. Pettinari, H. Engelkamp, P. C. M. Christianen, J. C. Maan, A. Polimeni, M. Capizzi, X. Lu, T. Tiedje, “Compositional evolution of Bi-induced acceptor states in GaAs1−xBix alloy,” Phys. Rev. B 83(20), 201201 (2011).
    [CrossRef]
  12. G. Pettinari, A. Patané, A. Polimeni, M. Capizzi, X. M. Lu, T. Tiedje, “Bi-induced p-type conductivity in nominally undoped Ga(AsBi),” Appl. Phys. Lett. 100(9), 092109 (2012).
    [CrossRef]
  13. G. Pettinari, A. Patané, A. Polimeni, M. Capizzi, X. M. Lu, T. Tiedje, “Effects of hydrogen on the electronic properties of Ga(AsBi) alloys,” Appl. Phys. Lett. 101(22), 222103 (2012).
    [CrossRef]
  14. G. Irmer, M. Wenzel, J. Monecke, “Light scattering by a multicomponent plasma coupled with longitudinal-optical phonons: Raman spectra of p-type GaAs:Zn,” Phys. Rev. B 56(15), 9524 (1997).
    [CrossRef]
  15. K. Wan, J. F. Young, “Interaction of longitudinal-optic phonons with free holes as evidenced in Raman spectra from Be-doped p-type GaAs,” Phys Rev. B. 41(15), 10772 (1990).
    [CrossRef]
  16. P. Verma, K. Oe, M. Yamada, H. Harima, M. Herms, G. Irmer, “Raman studies on GaAs1−xBix and InAs1−xBix,” J. Appl. Phys. 89(3), 1657 (2001).
    [CrossRef]
  17. R. Fukasawa, S. Perkowitz, “Raman-scattering spectra of coupled LO-phonon-hole-plasmon modes in p-type GaAs,” Phys. Rev. B 50(19), 14119 (1994).
    [CrossRef]
  18. J. A. Steele, R. A. Lewis, M. Henini, O. M. Lemine, A. Alkaoud, “Raman scattering studies of strain effects in (100) and (311)B GaAs1−xBix epitaxial layers,” J. Appl. Phys. 114(19), 193516 (2013).
    [CrossRef]
  19. X. Lu, D. A. Beaton, R. B. Lewis, T. Tiedje, Yong Zhang, “Composition dependence of photoluminescence of GaAs1−xBix alloys,” Appl. Phys. Lett. 95(4), 041903 (2009).
    [CrossRef]
  20. M. Henini, J. Ibáñez, M. Schmidbauer, M. Shafi, S. V. Novikov, L. Turyanska, S. I. Molina, D. L. Sales, M. F. Chisholm, J. Misiewicz, “Molecular beam epitaxy of GaBiAs on (311)B GaAs substrates,” Appl. Phys. Lett. 91(25), 251909 (2007).
    [CrossRef]
  21. K. Wan, J. F. Young, R. L. S. Devine, W. T. Moore, A. J. Spring Thorpe, C. J. Miner, P. Mandeville, “Free-carrier density determination in p-type GaAs using Raman scattering from coupled plasmon-phonon modes,” J. Appl. Phys. 63(11), 5598 (1988).
    [CrossRef]
  22. A. Mlayah, R. Carles, G. Landa, E. Bedel, A. Muñoz-Yagüe, “Raman study of longitudinal optical phonon-plasmon coupling and disorder effects in heavily Be-doped GaAs,” J. Appl. Phys. 69(7), 4064 (1991).
    [CrossRef]
  23. G. Lucovsky, R. M. Martin, E. Burstein, “Localized effective charges in diatomic crystals,” Phys. Rev. B 4(4), 1367 (1971).
    [CrossRef]
  24. R. Fukasawa, S. Katayama, A. Hasegawa, K. Ohta, “Analysis of Raman spectra from heavily doped p-GaAs,” J. Phys. Soc. Jpn. 57(10), 3632–3640 (1988).
    [CrossRef]
  25. L. H. Dubois, B. R. Zegarski, “Electron-energy-loss study of the space-charge region at semiconductor surfaces,” Phys. Rev. B 35(17), 9128 (1987).
    [CrossRef]
  26. T. Yuasa, S. Naritsuka, M. Mannoh, K. Shinozaki, K. Yamanaka, Y. Nomura, M. Mihara, M. Ishii, “Raman scattering from coupled plasmon-LO-phonon modes in n-type AlxGa1−xAs,” Phys. Rev. B. 33(2), 1222 (1986).
    [CrossRef]
  27. A. Pinczuk, A. A. Ballman, R. E. Nahory, M. A. Pollack, J. M. Worlock, “Raman scattering studies of surface space charge layers and Schottky barrier formation in InP,” J. Vac. Sci. Technol. 16(5), 1168 (1979).
    [CrossRef]
  28. K. Murase, S. Katayama, Y. Ando, H. Kawamura, “Observation of a coupled phonon-damped-plasmon mode in n-GaAs by Raman scattering,” Phys. Rev. Lett. 33, 1481 (1974).
    [CrossRef]
  29. N. B. Sedrine, M. Moussa, H. Fitouri, A. Rebey, B. El Jani, R. Chtourou, “Spectroscopic ellipsometry study of GaAs1−xBix material grown on GaAs substrate by atmospheric pressure metal-organic vapor-phase epitaxy,” Appl. Phys. Lett. 95(1), 011910 (2009).
    [CrossRef]
  30. M. Mbarki, A. Rebey, “First-principles calculation of the physical properties of GaAs1−xBix alloys,” Semicond. Sci. Technol. 26(10), 105020 (2011).
    [CrossRef]
  31. M. J. Seong, S. H. Chun, H. M. Cheong, N. Samarth, A. Mascarenhas, “Spectroscopic determination of hole density in the ferromagnetic semiconductor Ga1−xMnxAs,” Phys. Rev. B 66(3), 033202 (2002).
    [CrossRef]
  32. I. T. Yoon, T. W. Kang, “Analysis of Raman scattering of Ga1−xMnxAs dilute magnetic semiconductor,” J. Magn. Magn. Mater. 321(14), 2257–2259 (2009).
    [CrossRef]
  33. M. Kreitman, D. L. Barnett, “Probability tables for clusters of foreign atoms in simple lattices assuming next-nearest-neighbor interactions,” J. Chem. Phys. 43(2), 364 (1965).
    [CrossRef]

2013

G. Pettinari, A. Polimeni, M. Capizzi, H. Engelkamp, P. C. M. Christianen, J. C. Maan, A Patané, T. Tiedje, “Effects of Bi incorporation on the electronic properties of GaAs: Carrier masses, hole mobility, and Bi-induced acceptor states,” Phys. Status Solidi B 250(4), 779–786 (2013).
[CrossRef]

S. J. Sweeney, S. R. Jin, “Bismide-nitride alloys: Promising for efficient light emitting devices in the near-and mid-infrared,” J. Appl. Phys. 113(4), 043110 (2013).
[CrossRef]

J. A. Steele, R. A. Lewis, M. Henini, O. M. Lemine, A. Alkaoud, “Raman scattering studies of strain effects in (100) and (311)B GaAs1−xBix epitaxial layers,” J. Appl. Phys. 114(19), 193516 (2013).
[CrossRef]

2012

G. Pettinari, A. Patané, A. Polimeni, M. Capizzi, X. M. Lu, T. Tiedje, “Bi-induced p-type conductivity in nominally undoped Ga(AsBi),” Appl. Phys. Lett. 100(9), 092109 (2012).
[CrossRef]

G. Pettinari, A. Patané, A. Polimeni, M. Capizzi, X. M. Lu, T. Tiedje, “Effects of hydrogen on the electronic properties of Ga(AsBi) alloys,” Appl. Phys. Lett. 101(22), 222103 (2012).
[CrossRef]

2011

S. Nargelas, K. Jaračiūnas, K. Bertulis, V. Pačebutas, “Hole diffusivity in GaAsBi alloys measured by a picosecond transient grating technique,” Appl. Phys. Lett. 98(8), 082115 (2011).
[CrossRef]

G. Pettinari, H. Engelkamp, P. C. M. Christianen, J. C. Maan, A. Polimeni, M. Capizzi, X. Lu, T. Tiedje, “Compositional evolution of Bi-induced acceptor states in GaAs1−xBix alloy,” Phys. Rev. B 83(20), 201201 (2011).
[CrossRef]

M. Mbarki, A. Rebey, “First-principles calculation of the physical properties of GaAs1−xBix alloys,” Semicond. Sci. Technol. 26(10), 105020 (2011).
[CrossRef]

2009

I. T. Yoon, T. W. Kang, “Analysis of Raman scattering of Ga1−xMnxAs dilute magnetic semiconductor,” J. Magn. Magn. Mater. 321(14), 2257–2259 (2009).
[CrossRef]

N. B. Sedrine, M. Moussa, H. Fitouri, A. Rebey, B. El Jani, R. Chtourou, “Spectroscopic ellipsometry study of GaAs1−xBix material grown on GaAs substrate by atmospheric pressure metal-organic vapor-phase epitaxy,” Appl. Phys. Lett. 95(1), 011910 (2009).
[CrossRef]

X. Lu, D. A. Beaton, R. B. Lewis, T. Tiedje, Yong Zhang, “Composition dependence of photoluminescence of GaAs1−xBix alloys,” Appl. Phys. Lett. 95(4), 041903 (2009).
[CrossRef]

2008

S. Francoeur, S. Tixier, E. Young, T. Tiedje, A. Mascarenhas, “Bi isoelectronic impurities in GaAs,” Phys. Rev. B 77(8), 085209 (2008).
[CrossRef]

2007

K. Alberi, O. D. Dubon, W. Walukiewicz, K. M. Yu, K. Bertulis, A. Krotkus, “Valence band anticrossing in GaAs1−xBix,” Appl. Phys. Lett. 91(5), 051909 (2007).
[CrossRef]

M. Henini, J. Ibáñez, M. Schmidbauer, M. Shafi, S. V. Novikov, L. Turyanska, S. I. Molina, D. L. Sales, M. F. Chisholm, J. Misiewicz, “Molecular beam epitaxy of GaBiAs on (311)B GaAs substrates,” Appl. Phys. Lett. 91(25), 251909 (2007).
[CrossRef]

2006

B. Fluegel, S. Francoeur, A. Mascarenhas, S. Tixier, E. C. Young, T. Tiedje, “Giant spin-orbit bowing in GaAs1−xBix,” Phys. Rev. Lett. 97(6), 067205 (2006).
[CrossRef] [PubMed]

K. Bertulis, A. Krotkus, G. Aleksejenko, V. Pačebutas, R. Adomavičius, G. Molis, S. Marcinkevičius, “GaBiAs: A material for optoelectronic terahertz devices,” Appl. Phys. Lett. 88(20), 201112 (2006).
[CrossRef]

2003

S. Francoeur, M. J. Seong, A. Mascarenhas, S. Tixier, M. Adamcyk, T. Tiedje, “Band gap of GaAs1−xBix, 0<x<3.6%,” Appl. Phys. Lett. 82(22), 3874 (2003).
[CrossRef]

J. Yoshida, T. Kita, O. Wada, K. Oe, “Temperature dependence of GaAs1−xBix band gap studied by photoreflectance spectroscopy,” Jpn. J. Appl. Phys. 42, 371–374 (2003).
[CrossRef]

2002

K. Oe, “Characteristics of semiconductor alloy GaAs1−xBix,” Jpn. J. Appl. Phys. 41, 2801–2806 (2002).
[CrossRef]

M. J. Seong, S. H. Chun, H. M. Cheong, N. Samarth, A. Mascarenhas, “Spectroscopic determination of hole density in the ferromagnetic semiconductor Ga1−xMnxAs,” Phys. Rev. B 66(3), 033202 (2002).
[CrossRef]

2001

P. Verma, K. Oe, M. Yamada, H. Harima, M. Herms, G. Irmer, “Raman studies on GaAs1−xBix and InAs1−xBix,” J. Appl. Phys. 89(3), 1657 (2001).
[CrossRef]

1997

G. Irmer, M. Wenzel, J. Monecke, “Light scattering by a multicomponent plasma coupled with longitudinal-optical phonons: Raman spectra of p-type GaAs:Zn,” Phys. Rev. B 56(15), 9524 (1997).
[CrossRef]

1994

R. Fukasawa, S. Perkowitz, “Raman-scattering spectra of coupled LO-phonon-hole-plasmon modes in p-type GaAs,” Phys. Rev. B 50(19), 14119 (1994).
[CrossRef]

1991

A. Mlayah, R. Carles, G. Landa, E. Bedel, A. Muñoz-Yagüe, “Raman study of longitudinal optical phonon-plasmon coupling and disorder effects in heavily Be-doped GaAs,” J. Appl. Phys. 69(7), 4064 (1991).
[CrossRef]

1990

K. Wan, J. F. Young, “Interaction of longitudinal-optic phonons with free holes as evidenced in Raman spectra from Be-doped p-type GaAs,” Phys Rev. B. 41(15), 10772 (1990).
[CrossRef]

1988

K. Wan, J. F. Young, R. L. S. Devine, W. T. Moore, A. J. Spring Thorpe, C. J. Miner, P. Mandeville, “Free-carrier density determination in p-type GaAs using Raman scattering from coupled plasmon-phonon modes,” J. Appl. Phys. 63(11), 5598 (1988).
[CrossRef]

R. Fukasawa, S. Katayama, A. Hasegawa, K. Ohta, “Analysis of Raman spectra from heavily doped p-GaAs,” J. Phys. Soc. Jpn. 57(10), 3632–3640 (1988).
[CrossRef]

1987

L. H. Dubois, B. R. Zegarski, “Electron-energy-loss study of the space-charge region at semiconductor surfaces,” Phys. Rev. B 35(17), 9128 (1987).
[CrossRef]

1986

T. Yuasa, S. Naritsuka, M. Mannoh, K. Shinozaki, K. Yamanaka, Y. Nomura, M. Mihara, M. Ishii, “Raman scattering from coupled plasmon-LO-phonon modes in n-type AlxGa1−xAs,” Phys. Rev. B. 33(2), 1222 (1986).
[CrossRef]

1979

A. Pinczuk, A. A. Ballman, R. E. Nahory, M. A. Pollack, J. M. Worlock, “Raman scattering studies of surface space charge layers and Schottky barrier formation in InP,” J. Vac. Sci. Technol. 16(5), 1168 (1979).
[CrossRef]

1974

K. Murase, S. Katayama, Y. Ando, H. Kawamura, “Observation of a coupled phonon-damped-plasmon mode in n-GaAs by Raman scattering,” Phys. Rev. Lett. 33, 1481 (1974).
[CrossRef]

1971

G. Lucovsky, R. M. Martin, E. Burstein, “Localized effective charges in diatomic crystals,” Phys. Rev. B 4(4), 1367 (1971).
[CrossRef]

1965

M. Kreitman, D. L. Barnett, “Probability tables for clusters of foreign atoms in simple lattices assuming next-nearest-neighbor interactions,” J. Chem. Phys. 43(2), 364 (1965).
[CrossRef]

Adamcyk, M.

S. Francoeur, M. J. Seong, A. Mascarenhas, S. Tixier, M. Adamcyk, T. Tiedje, “Band gap of GaAs1−xBix, 0<x<3.6%,” Appl. Phys. Lett. 82(22), 3874 (2003).
[CrossRef]

Adomavicius, R.

K. Bertulis, A. Krotkus, G. Aleksejenko, V. Pačebutas, R. Adomavičius, G. Molis, S. Marcinkevičius, “GaBiAs: A material for optoelectronic terahertz devices,” Appl. Phys. Lett. 88(20), 201112 (2006).
[CrossRef]

Alberi, K.

K. Alberi, O. D. Dubon, W. Walukiewicz, K. M. Yu, K. Bertulis, A. Krotkus, “Valence band anticrossing in GaAs1−xBix,” Appl. Phys. Lett. 91(5), 051909 (2007).
[CrossRef]

Aleksejenko, G.

K. Bertulis, A. Krotkus, G. Aleksejenko, V. Pačebutas, R. Adomavičius, G. Molis, S. Marcinkevičius, “GaBiAs: A material for optoelectronic terahertz devices,” Appl. Phys. Lett. 88(20), 201112 (2006).
[CrossRef]

Alkaoud, A.

J. A. Steele, R. A. Lewis, M. Henini, O. M. Lemine, A. Alkaoud, “Raman scattering studies of strain effects in (100) and (311)B GaAs1−xBix epitaxial layers,” J. Appl. Phys. 114(19), 193516 (2013).
[CrossRef]

Ando, Y.

K. Murase, S. Katayama, Y. Ando, H. Kawamura, “Observation of a coupled phonon-damped-plasmon mode in n-GaAs by Raman scattering,” Phys. Rev. Lett. 33, 1481 (1974).
[CrossRef]

Ballman, A. A.

A. Pinczuk, A. A. Ballman, R. E. Nahory, M. A. Pollack, J. M. Worlock, “Raman scattering studies of surface space charge layers and Schottky barrier formation in InP,” J. Vac. Sci. Technol. 16(5), 1168 (1979).
[CrossRef]

Barnett, D. L.

M. Kreitman, D. L. Barnett, “Probability tables for clusters of foreign atoms in simple lattices assuming next-nearest-neighbor interactions,” J. Chem. Phys. 43(2), 364 (1965).
[CrossRef]

Beaton, D. A.

X. Lu, D. A. Beaton, R. B. Lewis, T. Tiedje, Yong Zhang, “Composition dependence of photoluminescence of GaAs1−xBix alloys,” Appl. Phys. Lett. 95(4), 041903 (2009).
[CrossRef]

Bedel, E.

A. Mlayah, R. Carles, G. Landa, E. Bedel, A. Muñoz-Yagüe, “Raman study of longitudinal optical phonon-plasmon coupling and disorder effects in heavily Be-doped GaAs,” J. Appl. Phys. 69(7), 4064 (1991).
[CrossRef]

Bertulis, K.

S. Nargelas, K. Jaračiūnas, K. Bertulis, V. Pačebutas, “Hole diffusivity in GaAsBi alloys measured by a picosecond transient grating technique,” Appl. Phys. Lett. 98(8), 082115 (2011).
[CrossRef]

K. Alberi, O. D. Dubon, W. Walukiewicz, K. M. Yu, K. Bertulis, A. Krotkus, “Valence band anticrossing in GaAs1−xBix,” Appl. Phys. Lett. 91(5), 051909 (2007).
[CrossRef]

K. Bertulis, A. Krotkus, G. Aleksejenko, V. Pačebutas, R. Adomavičius, G. Molis, S. Marcinkevičius, “GaBiAs: A material for optoelectronic terahertz devices,” Appl. Phys. Lett. 88(20), 201112 (2006).
[CrossRef]

Burstein, E.

G. Lucovsky, R. M. Martin, E. Burstein, “Localized effective charges in diatomic crystals,” Phys. Rev. B 4(4), 1367 (1971).
[CrossRef]

Capizzi, M.

G. Pettinari, A. Polimeni, M. Capizzi, H. Engelkamp, P. C. M. Christianen, J. C. Maan, A Patané, T. Tiedje, “Effects of Bi incorporation on the electronic properties of GaAs: Carrier masses, hole mobility, and Bi-induced acceptor states,” Phys. Status Solidi B 250(4), 779–786 (2013).
[CrossRef]

G. Pettinari, A. Patané, A. Polimeni, M. Capizzi, X. M. Lu, T. Tiedje, “Bi-induced p-type conductivity in nominally undoped Ga(AsBi),” Appl. Phys. Lett. 100(9), 092109 (2012).
[CrossRef]

G. Pettinari, A. Patané, A. Polimeni, M. Capizzi, X. M. Lu, T. Tiedje, “Effects of hydrogen on the electronic properties of Ga(AsBi) alloys,” Appl. Phys. Lett. 101(22), 222103 (2012).
[CrossRef]

G. Pettinari, H. Engelkamp, P. C. M. Christianen, J. C. Maan, A. Polimeni, M. Capizzi, X. Lu, T. Tiedje, “Compositional evolution of Bi-induced acceptor states in GaAs1−xBix alloy,” Phys. Rev. B 83(20), 201201 (2011).
[CrossRef]

Carles, R.

A. Mlayah, R. Carles, G. Landa, E. Bedel, A. Muñoz-Yagüe, “Raman study of longitudinal optical phonon-plasmon coupling and disorder effects in heavily Be-doped GaAs,” J. Appl. Phys. 69(7), 4064 (1991).
[CrossRef]

Cheong, H. M.

M. J. Seong, S. H. Chun, H. M. Cheong, N. Samarth, A. Mascarenhas, “Spectroscopic determination of hole density in the ferromagnetic semiconductor Ga1−xMnxAs,” Phys. Rev. B 66(3), 033202 (2002).
[CrossRef]

Chisholm, M. F.

M. Henini, J. Ibáñez, M. Schmidbauer, M. Shafi, S. V. Novikov, L. Turyanska, S. I. Molina, D. L. Sales, M. F. Chisholm, J. Misiewicz, “Molecular beam epitaxy of GaBiAs on (311)B GaAs substrates,” Appl. Phys. Lett. 91(25), 251909 (2007).
[CrossRef]

Christianen, P. C. M.

G. Pettinari, A. Polimeni, M. Capizzi, H. Engelkamp, P. C. M. Christianen, J. C. Maan, A Patané, T. Tiedje, “Effects of Bi incorporation on the electronic properties of GaAs: Carrier masses, hole mobility, and Bi-induced acceptor states,” Phys. Status Solidi B 250(4), 779–786 (2013).
[CrossRef]

G. Pettinari, H. Engelkamp, P. C. M. Christianen, J. C. Maan, A. Polimeni, M. Capizzi, X. Lu, T. Tiedje, “Compositional evolution of Bi-induced acceptor states in GaAs1−xBix alloy,” Phys. Rev. B 83(20), 201201 (2011).
[CrossRef]

Chtourou, R.

N. B. Sedrine, M. Moussa, H. Fitouri, A. Rebey, B. El Jani, R. Chtourou, “Spectroscopic ellipsometry study of GaAs1−xBix material grown on GaAs substrate by atmospheric pressure metal-organic vapor-phase epitaxy,” Appl. Phys. Lett. 95(1), 011910 (2009).
[CrossRef]

Chun, S. H.

M. J. Seong, S. H. Chun, H. M. Cheong, N. Samarth, A. Mascarenhas, “Spectroscopic determination of hole density in the ferromagnetic semiconductor Ga1−xMnxAs,” Phys. Rev. B 66(3), 033202 (2002).
[CrossRef]

Devine, R. L. S.

K. Wan, J. F. Young, R. L. S. Devine, W. T. Moore, A. J. Spring Thorpe, C. J. Miner, P. Mandeville, “Free-carrier density determination in p-type GaAs using Raman scattering from coupled plasmon-phonon modes,” J. Appl. Phys. 63(11), 5598 (1988).
[CrossRef]

Dubois, L. H.

L. H. Dubois, B. R. Zegarski, “Electron-energy-loss study of the space-charge region at semiconductor surfaces,” Phys. Rev. B 35(17), 9128 (1987).
[CrossRef]

Dubon, O. D.

K. Alberi, O. D. Dubon, W. Walukiewicz, K. M. Yu, K. Bertulis, A. Krotkus, “Valence band anticrossing in GaAs1−xBix,” Appl. Phys. Lett. 91(5), 051909 (2007).
[CrossRef]

El Jani, B.

N. B. Sedrine, M. Moussa, H. Fitouri, A. Rebey, B. El Jani, R. Chtourou, “Spectroscopic ellipsometry study of GaAs1−xBix material grown on GaAs substrate by atmospheric pressure metal-organic vapor-phase epitaxy,” Appl. Phys. Lett. 95(1), 011910 (2009).
[CrossRef]

Engelkamp, H.

G. Pettinari, A. Polimeni, M. Capizzi, H. Engelkamp, P. C. M. Christianen, J. C. Maan, A Patané, T. Tiedje, “Effects of Bi incorporation on the electronic properties of GaAs: Carrier masses, hole mobility, and Bi-induced acceptor states,” Phys. Status Solidi B 250(4), 779–786 (2013).
[CrossRef]

G. Pettinari, H. Engelkamp, P. C. M. Christianen, J. C. Maan, A. Polimeni, M. Capizzi, X. Lu, T. Tiedje, “Compositional evolution of Bi-induced acceptor states in GaAs1−xBix alloy,” Phys. Rev. B 83(20), 201201 (2011).
[CrossRef]

Fitouri, H.

N. B. Sedrine, M. Moussa, H. Fitouri, A. Rebey, B. El Jani, R. Chtourou, “Spectroscopic ellipsometry study of GaAs1−xBix material grown on GaAs substrate by atmospheric pressure metal-organic vapor-phase epitaxy,” Appl. Phys. Lett. 95(1), 011910 (2009).
[CrossRef]

Fluegel, B.

B. Fluegel, S. Francoeur, A. Mascarenhas, S. Tixier, E. C. Young, T. Tiedje, “Giant spin-orbit bowing in GaAs1−xBix,” Phys. Rev. Lett. 97(6), 067205 (2006).
[CrossRef] [PubMed]

Francoeur, S.

S. Francoeur, S. Tixier, E. Young, T. Tiedje, A. Mascarenhas, “Bi isoelectronic impurities in GaAs,” Phys. Rev. B 77(8), 085209 (2008).
[CrossRef]

B. Fluegel, S. Francoeur, A. Mascarenhas, S. Tixier, E. C. Young, T. Tiedje, “Giant spin-orbit bowing in GaAs1−xBix,” Phys. Rev. Lett. 97(6), 067205 (2006).
[CrossRef] [PubMed]

S. Francoeur, M. J. Seong, A. Mascarenhas, S. Tixier, M. Adamcyk, T. Tiedje, “Band gap of GaAs1−xBix, 0<x<3.6%,” Appl. Phys. Lett. 82(22), 3874 (2003).
[CrossRef]

Fukasawa, R.

R. Fukasawa, S. Perkowitz, “Raman-scattering spectra of coupled LO-phonon-hole-plasmon modes in p-type GaAs,” Phys. Rev. B 50(19), 14119 (1994).
[CrossRef]

R. Fukasawa, S. Katayama, A. Hasegawa, K. Ohta, “Analysis of Raman spectra from heavily doped p-GaAs,” J. Phys. Soc. Jpn. 57(10), 3632–3640 (1988).
[CrossRef]

Harima, H.

P. Verma, K. Oe, M. Yamada, H. Harima, M. Herms, G. Irmer, “Raman studies on GaAs1−xBix and InAs1−xBix,” J. Appl. Phys. 89(3), 1657 (2001).
[CrossRef]

Hasegawa, A.

R. Fukasawa, S. Katayama, A. Hasegawa, K. Ohta, “Analysis of Raman spectra from heavily doped p-GaAs,” J. Phys. Soc. Jpn. 57(10), 3632–3640 (1988).
[CrossRef]

Henini, M.

J. A. Steele, R. A. Lewis, M. Henini, O. M. Lemine, A. Alkaoud, “Raman scattering studies of strain effects in (100) and (311)B GaAs1−xBix epitaxial layers,” J. Appl. Phys. 114(19), 193516 (2013).
[CrossRef]

M. Henini, J. Ibáñez, M. Schmidbauer, M. Shafi, S. V. Novikov, L. Turyanska, S. I. Molina, D. L. Sales, M. F. Chisholm, J. Misiewicz, “Molecular beam epitaxy of GaBiAs on (311)B GaAs substrates,” Appl. Phys. Lett. 91(25), 251909 (2007).
[CrossRef]

Herms, M.

P. Verma, K. Oe, M. Yamada, H. Harima, M. Herms, G. Irmer, “Raman studies on GaAs1−xBix and InAs1−xBix,” J. Appl. Phys. 89(3), 1657 (2001).
[CrossRef]

Ibáñez, J.

M. Henini, J. Ibáñez, M. Schmidbauer, M. Shafi, S. V. Novikov, L. Turyanska, S. I. Molina, D. L. Sales, M. F. Chisholm, J. Misiewicz, “Molecular beam epitaxy of GaBiAs on (311)B GaAs substrates,” Appl. Phys. Lett. 91(25), 251909 (2007).
[CrossRef]

Irmer, G.

P. Verma, K. Oe, M. Yamada, H. Harima, M. Herms, G. Irmer, “Raman studies on GaAs1−xBix and InAs1−xBix,” J. Appl. Phys. 89(3), 1657 (2001).
[CrossRef]

G. Irmer, M. Wenzel, J. Monecke, “Light scattering by a multicomponent plasma coupled with longitudinal-optical phonons: Raman spectra of p-type GaAs:Zn,” Phys. Rev. B 56(15), 9524 (1997).
[CrossRef]

Ishii, M.

T. Yuasa, S. Naritsuka, M. Mannoh, K. Shinozaki, K. Yamanaka, Y. Nomura, M. Mihara, M. Ishii, “Raman scattering from coupled plasmon-LO-phonon modes in n-type AlxGa1−xAs,” Phys. Rev. B. 33(2), 1222 (1986).
[CrossRef]

Jaraciunas, K.

S. Nargelas, K. Jaračiūnas, K. Bertulis, V. Pačebutas, “Hole diffusivity in GaAsBi alloys measured by a picosecond transient grating technique,” Appl. Phys. Lett. 98(8), 082115 (2011).
[CrossRef]

Jin, S. R.

S. J. Sweeney, S. R. Jin, “Bismide-nitride alloys: Promising for efficient light emitting devices in the near-and mid-infrared,” J. Appl. Phys. 113(4), 043110 (2013).
[CrossRef]

Kang, T. W.

I. T. Yoon, T. W. Kang, “Analysis of Raman scattering of Ga1−xMnxAs dilute magnetic semiconductor,” J. Magn. Magn. Mater. 321(14), 2257–2259 (2009).
[CrossRef]

Katayama, S.

R. Fukasawa, S. Katayama, A. Hasegawa, K. Ohta, “Analysis of Raman spectra from heavily doped p-GaAs,” J. Phys. Soc. Jpn. 57(10), 3632–3640 (1988).
[CrossRef]

K. Murase, S. Katayama, Y. Ando, H. Kawamura, “Observation of a coupled phonon-damped-plasmon mode in n-GaAs by Raman scattering,” Phys. Rev. Lett. 33, 1481 (1974).
[CrossRef]

Kawamura, H.

K. Murase, S. Katayama, Y. Ando, H. Kawamura, “Observation of a coupled phonon-damped-plasmon mode in n-GaAs by Raman scattering,” Phys. Rev. Lett. 33, 1481 (1974).
[CrossRef]

Kita, T.

J. Yoshida, T. Kita, O. Wada, K. Oe, “Temperature dependence of GaAs1−xBix band gap studied by photoreflectance spectroscopy,” Jpn. J. Appl. Phys. 42, 371–374 (2003).
[CrossRef]

Kreitman, M.

M. Kreitman, D. L. Barnett, “Probability tables for clusters of foreign atoms in simple lattices assuming next-nearest-neighbor interactions,” J. Chem. Phys. 43(2), 364 (1965).
[CrossRef]

Krotkus, A.

K. Alberi, O. D. Dubon, W. Walukiewicz, K. M. Yu, K. Bertulis, A. Krotkus, “Valence band anticrossing in GaAs1−xBix,” Appl. Phys. Lett. 91(5), 051909 (2007).
[CrossRef]

K. Bertulis, A. Krotkus, G. Aleksejenko, V. Pačebutas, R. Adomavičius, G. Molis, S. Marcinkevičius, “GaBiAs: A material for optoelectronic terahertz devices,” Appl. Phys. Lett. 88(20), 201112 (2006).
[CrossRef]

Landa, G.

A. Mlayah, R. Carles, G. Landa, E. Bedel, A. Muñoz-Yagüe, “Raman study of longitudinal optical phonon-plasmon coupling and disorder effects in heavily Be-doped GaAs,” J. Appl. Phys. 69(7), 4064 (1991).
[CrossRef]

Lemine, O. M.

J. A. Steele, R. A. Lewis, M. Henini, O. M. Lemine, A. Alkaoud, “Raman scattering studies of strain effects in (100) and (311)B GaAs1−xBix epitaxial layers,” J. Appl. Phys. 114(19), 193516 (2013).
[CrossRef]

Lewis, R. A.

J. A. Steele, R. A. Lewis, M. Henini, O. M. Lemine, A. Alkaoud, “Raman scattering studies of strain effects in (100) and (311)B GaAs1−xBix epitaxial layers,” J. Appl. Phys. 114(19), 193516 (2013).
[CrossRef]

Lewis, R. B.

X. Lu, D. A. Beaton, R. B. Lewis, T. Tiedje, Yong Zhang, “Composition dependence of photoluminescence of GaAs1−xBix alloys,” Appl. Phys. Lett. 95(4), 041903 (2009).
[CrossRef]

Lu, X.

G. Pettinari, H. Engelkamp, P. C. M. Christianen, J. C. Maan, A. Polimeni, M. Capizzi, X. Lu, T. Tiedje, “Compositional evolution of Bi-induced acceptor states in GaAs1−xBix alloy,” Phys. Rev. B 83(20), 201201 (2011).
[CrossRef]

X. Lu, D. A. Beaton, R. B. Lewis, T. Tiedje, Yong Zhang, “Composition dependence of photoluminescence of GaAs1−xBix alloys,” Appl. Phys. Lett. 95(4), 041903 (2009).
[CrossRef]

Lu, X. M.

G. Pettinari, A. Patané, A. Polimeni, M. Capizzi, X. M. Lu, T. Tiedje, “Effects of hydrogen on the electronic properties of Ga(AsBi) alloys,” Appl. Phys. Lett. 101(22), 222103 (2012).
[CrossRef]

G. Pettinari, A. Patané, A. Polimeni, M. Capizzi, X. M. Lu, T. Tiedje, “Bi-induced p-type conductivity in nominally undoped Ga(AsBi),” Appl. Phys. Lett. 100(9), 092109 (2012).
[CrossRef]

Lucovsky, G.

G. Lucovsky, R. M. Martin, E. Burstein, “Localized effective charges in diatomic crystals,” Phys. Rev. B 4(4), 1367 (1971).
[CrossRef]

Maan, J. C.

G. Pettinari, A. Polimeni, M. Capizzi, H. Engelkamp, P. C. M. Christianen, J. C. Maan, A Patané, T. Tiedje, “Effects of Bi incorporation on the electronic properties of GaAs: Carrier masses, hole mobility, and Bi-induced acceptor states,” Phys. Status Solidi B 250(4), 779–786 (2013).
[CrossRef]

G. Pettinari, H. Engelkamp, P. C. M. Christianen, J. C. Maan, A. Polimeni, M. Capizzi, X. Lu, T. Tiedje, “Compositional evolution of Bi-induced acceptor states in GaAs1−xBix alloy,” Phys. Rev. B 83(20), 201201 (2011).
[CrossRef]

Mandeville, P.

K. Wan, J. F. Young, R. L. S. Devine, W. T. Moore, A. J. Spring Thorpe, C. J. Miner, P. Mandeville, “Free-carrier density determination in p-type GaAs using Raman scattering from coupled plasmon-phonon modes,” J. Appl. Phys. 63(11), 5598 (1988).
[CrossRef]

Mannoh, M.

T. Yuasa, S. Naritsuka, M. Mannoh, K. Shinozaki, K. Yamanaka, Y. Nomura, M. Mihara, M. Ishii, “Raman scattering from coupled plasmon-LO-phonon modes in n-type AlxGa1−xAs,” Phys. Rev. B. 33(2), 1222 (1986).
[CrossRef]

Marcinkevicius, S.

K. Bertulis, A. Krotkus, G. Aleksejenko, V. Pačebutas, R. Adomavičius, G. Molis, S. Marcinkevičius, “GaBiAs: A material for optoelectronic terahertz devices,” Appl. Phys. Lett. 88(20), 201112 (2006).
[CrossRef]

Martin, R. M.

G. Lucovsky, R. M. Martin, E. Burstein, “Localized effective charges in diatomic crystals,” Phys. Rev. B 4(4), 1367 (1971).
[CrossRef]

Mascarenhas, A.

S. Francoeur, S. Tixier, E. Young, T. Tiedje, A. Mascarenhas, “Bi isoelectronic impurities in GaAs,” Phys. Rev. B 77(8), 085209 (2008).
[CrossRef]

B. Fluegel, S. Francoeur, A. Mascarenhas, S. Tixier, E. C. Young, T. Tiedje, “Giant spin-orbit bowing in GaAs1−xBix,” Phys. Rev. Lett. 97(6), 067205 (2006).
[CrossRef] [PubMed]

S. Francoeur, M. J. Seong, A. Mascarenhas, S. Tixier, M. Adamcyk, T. Tiedje, “Band gap of GaAs1−xBix, 0<x<3.6%,” Appl. Phys. Lett. 82(22), 3874 (2003).
[CrossRef]

M. J. Seong, S. H. Chun, H. M. Cheong, N. Samarth, A. Mascarenhas, “Spectroscopic determination of hole density in the ferromagnetic semiconductor Ga1−xMnxAs,” Phys. Rev. B 66(3), 033202 (2002).
[CrossRef]

Mbarki, M.

M. Mbarki, A. Rebey, “First-principles calculation of the physical properties of GaAs1−xBix alloys,” Semicond. Sci. Technol. 26(10), 105020 (2011).
[CrossRef]

Mihara, M.

T. Yuasa, S. Naritsuka, M. Mannoh, K. Shinozaki, K. Yamanaka, Y. Nomura, M. Mihara, M. Ishii, “Raman scattering from coupled plasmon-LO-phonon modes in n-type AlxGa1−xAs,” Phys. Rev. B. 33(2), 1222 (1986).
[CrossRef]

Miner, C. J.

K. Wan, J. F. Young, R. L. S. Devine, W. T. Moore, A. J. Spring Thorpe, C. J. Miner, P. Mandeville, “Free-carrier density determination in p-type GaAs using Raman scattering from coupled plasmon-phonon modes,” J. Appl. Phys. 63(11), 5598 (1988).
[CrossRef]

Misiewicz, J.

M. Henini, J. Ibáñez, M. Schmidbauer, M. Shafi, S. V. Novikov, L. Turyanska, S. I. Molina, D. L. Sales, M. F. Chisholm, J. Misiewicz, “Molecular beam epitaxy of GaBiAs on (311)B GaAs substrates,” Appl. Phys. Lett. 91(25), 251909 (2007).
[CrossRef]

Mlayah, A.

A. Mlayah, R. Carles, G. Landa, E. Bedel, A. Muñoz-Yagüe, “Raman study of longitudinal optical phonon-plasmon coupling and disorder effects in heavily Be-doped GaAs,” J. Appl. Phys. 69(7), 4064 (1991).
[CrossRef]

Molina, S. I.

M. Henini, J. Ibáñez, M. Schmidbauer, M. Shafi, S. V. Novikov, L. Turyanska, S. I. Molina, D. L. Sales, M. F. Chisholm, J. Misiewicz, “Molecular beam epitaxy of GaBiAs on (311)B GaAs substrates,” Appl. Phys. Lett. 91(25), 251909 (2007).
[CrossRef]

Molis, G.

K. Bertulis, A. Krotkus, G. Aleksejenko, V. Pačebutas, R. Adomavičius, G. Molis, S. Marcinkevičius, “GaBiAs: A material for optoelectronic terahertz devices,” Appl. Phys. Lett. 88(20), 201112 (2006).
[CrossRef]

Monecke, J.

G. Irmer, M. Wenzel, J. Monecke, “Light scattering by a multicomponent plasma coupled with longitudinal-optical phonons: Raman spectra of p-type GaAs:Zn,” Phys. Rev. B 56(15), 9524 (1997).
[CrossRef]

Moore, W. T.

K. Wan, J. F. Young, R. L. S. Devine, W. T. Moore, A. J. Spring Thorpe, C. J. Miner, P. Mandeville, “Free-carrier density determination in p-type GaAs using Raman scattering from coupled plasmon-phonon modes,” J. Appl. Phys. 63(11), 5598 (1988).
[CrossRef]

Moussa, M.

N. B. Sedrine, M. Moussa, H. Fitouri, A. Rebey, B. El Jani, R. Chtourou, “Spectroscopic ellipsometry study of GaAs1−xBix material grown on GaAs substrate by atmospheric pressure metal-organic vapor-phase epitaxy,” Appl. Phys. Lett. 95(1), 011910 (2009).
[CrossRef]

Muñoz-Yagüe, A.

A. Mlayah, R. Carles, G. Landa, E. Bedel, A. Muñoz-Yagüe, “Raman study of longitudinal optical phonon-plasmon coupling and disorder effects in heavily Be-doped GaAs,” J. Appl. Phys. 69(7), 4064 (1991).
[CrossRef]

Murase, K.

K. Murase, S. Katayama, Y. Ando, H. Kawamura, “Observation of a coupled phonon-damped-plasmon mode in n-GaAs by Raman scattering,” Phys. Rev. Lett. 33, 1481 (1974).
[CrossRef]

Nahory, R. E.

A. Pinczuk, A. A. Ballman, R. E. Nahory, M. A. Pollack, J. M. Worlock, “Raman scattering studies of surface space charge layers and Schottky barrier formation in InP,” J. Vac. Sci. Technol. 16(5), 1168 (1979).
[CrossRef]

Nargelas, S.

S. Nargelas, K. Jaračiūnas, K. Bertulis, V. Pačebutas, “Hole diffusivity in GaAsBi alloys measured by a picosecond transient grating technique,” Appl. Phys. Lett. 98(8), 082115 (2011).
[CrossRef]

Naritsuka, S.

T. Yuasa, S. Naritsuka, M. Mannoh, K. Shinozaki, K. Yamanaka, Y. Nomura, M. Mihara, M. Ishii, “Raman scattering from coupled plasmon-LO-phonon modes in n-type AlxGa1−xAs,” Phys. Rev. B. 33(2), 1222 (1986).
[CrossRef]

Nomura, Y.

T. Yuasa, S. Naritsuka, M. Mannoh, K. Shinozaki, K. Yamanaka, Y. Nomura, M. Mihara, M. Ishii, “Raman scattering from coupled plasmon-LO-phonon modes in n-type AlxGa1−xAs,” Phys. Rev. B. 33(2), 1222 (1986).
[CrossRef]

Novikov, S. V.

M. Henini, J. Ibáñez, M. Schmidbauer, M. Shafi, S. V. Novikov, L. Turyanska, S. I. Molina, D. L. Sales, M. F. Chisholm, J. Misiewicz, “Molecular beam epitaxy of GaBiAs on (311)B GaAs substrates,” Appl. Phys. Lett. 91(25), 251909 (2007).
[CrossRef]

Oe, K.

J. Yoshida, T. Kita, O. Wada, K. Oe, “Temperature dependence of GaAs1−xBix band gap studied by photoreflectance spectroscopy,” Jpn. J. Appl. Phys. 42, 371–374 (2003).
[CrossRef]

K. Oe, “Characteristics of semiconductor alloy GaAs1−xBix,” Jpn. J. Appl. Phys. 41, 2801–2806 (2002).
[CrossRef]

P. Verma, K. Oe, M. Yamada, H. Harima, M. Herms, G. Irmer, “Raman studies on GaAs1−xBix and InAs1−xBix,” J. Appl. Phys. 89(3), 1657 (2001).
[CrossRef]

Ohta, K.

R. Fukasawa, S. Katayama, A. Hasegawa, K. Ohta, “Analysis of Raman spectra from heavily doped p-GaAs,” J. Phys. Soc. Jpn. 57(10), 3632–3640 (1988).
[CrossRef]

Pacebutas, V.

S. Nargelas, K. Jaračiūnas, K. Bertulis, V. Pačebutas, “Hole diffusivity in GaAsBi alloys measured by a picosecond transient grating technique,” Appl. Phys. Lett. 98(8), 082115 (2011).
[CrossRef]

K. Bertulis, A. Krotkus, G. Aleksejenko, V. Pačebutas, R. Adomavičius, G. Molis, S. Marcinkevičius, “GaBiAs: A material for optoelectronic terahertz devices,” Appl. Phys. Lett. 88(20), 201112 (2006).
[CrossRef]

Patané, A

G. Pettinari, A. Polimeni, M. Capizzi, H. Engelkamp, P. C. M. Christianen, J. C. Maan, A Patané, T. Tiedje, “Effects of Bi incorporation on the electronic properties of GaAs: Carrier masses, hole mobility, and Bi-induced acceptor states,” Phys. Status Solidi B 250(4), 779–786 (2013).
[CrossRef]

Patané, A.

G. Pettinari, A. Patané, A. Polimeni, M. Capizzi, X. M. Lu, T. Tiedje, “Bi-induced p-type conductivity in nominally undoped Ga(AsBi),” Appl. Phys. Lett. 100(9), 092109 (2012).
[CrossRef]

G. Pettinari, A. Patané, A. Polimeni, M. Capizzi, X. M. Lu, T. Tiedje, “Effects of hydrogen on the electronic properties of Ga(AsBi) alloys,” Appl. Phys. Lett. 101(22), 222103 (2012).
[CrossRef]

Perkowitz, S.

R. Fukasawa, S. Perkowitz, “Raman-scattering spectra of coupled LO-phonon-hole-plasmon modes in p-type GaAs,” Phys. Rev. B 50(19), 14119 (1994).
[CrossRef]

Pettinari, G.

G. Pettinari, A. Polimeni, M. Capizzi, H. Engelkamp, P. C. M. Christianen, J. C. Maan, A Patané, T. Tiedje, “Effects of Bi incorporation on the electronic properties of GaAs: Carrier masses, hole mobility, and Bi-induced acceptor states,” Phys. Status Solidi B 250(4), 779–786 (2013).
[CrossRef]

G. Pettinari, A. Patané, A. Polimeni, M. Capizzi, X. M. Lu, T. Tiedje, “Bi-induced p-type conductivity in nominally undoped Ga(AsBi),” Appl. Phys. Lett. 100(9), 092109 (2012).
[CrossRef]

G. Pettinari, A. Patané, A. Polimeni, M. Capizzi, X. M. Lu, T. Tiedje, “Effects of hydrogen on the electronic properties of Ga(AsBi) alloys,” Appl. Phys. Lett. 101(22), 222103 (2012).
[CrossRef]

G. Pettinari, H. Engelkamp, P. C. M. Christianen, J. C. Maan, A. Polimeni, M. Capizzi, X. Lu, T. Tiedje, “Compositional evolution of Bi-induced acceptor states in GaAs1−xBix alloy,” Phys. Rev. B 83(20), 201201 (2011).
[CrossRef]

Pinczuk, A.

A. Pinczuk, A. A. Ballman, R. E. Nahory, M. A. Pollack, J. M. Worlock, “Raman scattering studies of surface space charge layers and Schottky barrier formation in InP,” J. Vac. Sci. Technol. 16(5), 1168 (1979).
[CrossRef]

Polimeni, A.

G. Pettinari, A. Polimeni, M. Capizzi, H. Engelkamp, P. C. M. Christianen, J. C. Maan, A Patané, T. Tiedje, “Effects of Bi incorporation on the electronic properties of GaAs: Carrier masses, hole mobility, and Bi-induced acceptor states,” Phys. Status Solidi B 250(4), 779–786 (2013).
[CrossRef]

G. Pettinari, A. Patané, A. Polimeni, M. Capizzi, X. M. Lu, T. Tiedje, “Bi-induced p-type conductivity in nominally undoped Ga(AsBi),” Appl. Phys. Lett. 100(9), 092109 (2012).
[CrossRef]

G. Pettinari, A. Patané, A. Polimeni, M. Capizzi, X. M. Lu, T. Tiedje, “Effects of hydrogen on the electronic properties of Ga(AsBi) alloys,” Appl. Phys. Lett. 101(22), 222103 (2012).
[CrossRef]

G. Pettinari, H. Engelkamp, P. C. M. Christianen, J. C. Maan, A. Polimeni, M. Capizzi, X. Lu, T. Tiedje, “Compositional evolution of Bi-induced acceptor states in GaAs1−xBix alloy,” Phys. Rev. B 83(20), 201201 (2011).
[CrossRef]

Pollack, M. A.

A. Pinczuk, A. A. Ballman, R. E. Nahory, M. A. Pollack, J. M. Worlock, “Raman scattering studies of surface space charge layers and Schottky barrier formation in InP,” J. Vac. Sci. Technol. 16(5), 1168 (1979).
[CrossRef]

Rebey, A.

M. Mbarki, A. Rebey, “First-principles calculation of the physical properties of GaAs1−xBix alloys,” Semicond. Sci. Technol. 26(10), 105020 (2011).
[CrossRef]

N. B. Sedrine, M. Moussa, H. Fitouri, A. Rebey, B. El Jani, R. Chtourou, “Spectroscopic ellipsometry study of GaAs1−xBix material grown on GaAs substrate by atmospheric pressure metal-organic vapor-phase epitaxy,” Appl. Phys. Lett. 95(1), 011910 (2009).
[CrossRef]

Sales, D. L.

M. Henini, J. Ibáñez, M. Schmidbauer, M. Shafi, S. V. Novikov, L. Turyanska, S. I. Molina, D. L. Sales, M. F. Chisholm, J. Misiewicz, “Molecular beam epitaxy of GaBiAs on (311)B GaAs substrates,” Appl. Phys. Lett. 91(25), 251909 (2007).
[CrossRef]

Samarth, N.

M. J. Seong, S. H. Chun, H. M. Cheong, N. Samarth, A. Mascarenhas, “Spectroscopic determination of hole density in the ferromagnetic semiconductor Ga1−xMnxAs,” Phys. Rev. B 66(3), 033202 (2002).
[CrossRef]

Schmidbauer, M.

M. Henini, J. Ibáñez, M. Schmidbauer, M. Shafi, S. V. Novikov, L. Turyanska, S. I. Molina, D. L. Sales, M. F. Chisholm, J. Misiewicz, “Molecular beam epitaxy of GaBiAs on (311)B GaAs substrates,” Appl. Phys. Lett. 91(25), 251909 (2007).
[CrossRef]

Sedrine, N. B.

N. B. Sedrine, M. Moussa, H. Fitouri, A. Rebey, B. El Jani, R. Chtourou, “Spectroscopic ellipsometry study of GaAs1−xBix material grown on GaAs substrate by atmospheric pressure metal-organic vapor-phase epitaxy,” Appl. Phys. Lett. 95(1), 011910 (2009).
[CrossRef]

Seong, M. J.

S. Francoeur, M. J. Seong, A. Mascarenhas, S. Tixier, M. Adamcyk, T. Tiedje, “Band gap of GaAs1−xBix, 0<x<3.6%,” Appl. Phys. Lett. 82(22), 3874 (2003).
[CrossRef]

M. J. Seong, S. H. Chun, H. M. Cheong, N. Samarth, A. Mascarenhas, “Spectroscopic determination of hole density in the ferromagnetic semiconductor Ga1−xMnxAs,” Phys. Rev. B 66(3), 033202 (2002).
[CrossRef]

Shafi, M.

M. Henini, J. Ibáñez, M. Schmidbauer, M. Shafi, S. V. Novikov, L. Turyanska, S. I. Molina, D. L. Sales, M. F. Chisholm, J. Misiewicz, “Molecular beam epitaxy of GaBiAs on (311)B GaAs substrates,” Appl. Phys. Lett. 91(25), 251909 (2007).
[CrossRef]

Shinozaki, K.

T. Yuasa, S. Naritsuka, M. Mannoh, K. Shinozaki, K. Yamanaka, Y. Nomura, M. Mihara, M. Ishii, “Raman scattering from coupled plasmon-LO-phonon modes in n-type AlxGa1−xAs,” Phys. Rev. B. 33(2), 1222 (1986).
[CrossRef]

Spring Thorpe, A. J.

K. Wan, J. F. Young, R. L. S. Devine, W. T. Moore, A. J. Spring Thorpe, C. J. Miner, P. Mandeville, “Free-carrier density determination in p-type GaAs using Raman scattering from coupled plasmon-phonon modes,” J. Appl. Phys. 63(11), 5598 (1988).
[CrossRef]

Steele, J. A.

J. A. Steele, R. A. Lewis, M. Henini, O. M. Lemine, A. Alkaoud, “Raman scattering studies of strain effects in (100) and (311)B GaAs1−xBix epitaxial layers,” J. Appl. Phys. 114(19), 193516 (2013).
[CrossRef]

Sweeney, S. J.

S. J. Sweeney, S. R. Jin, “Bismide-nitride alloys: Promising for efficient light emitting devices in the near-and mid-infrared,” J. Appl. Phys. 113(4), 043110 (2013).
[CrossRef]

Tiedje, T.

G. Pettinari, A. Polimeni, M. Capizzi, H. Engelkamp, P. C. M. Christianen, J. C. Maan, A Patané, T. Tiedje, “Effects of Bi incorporation on the electronic properties of GaAs: Carrier masses, hole mobility, and Bi-induced acceptor states,” Phys. Status Solidi B 250(4), 779–786 (2013).
[CrossRef]

G. Pettinari, A. Patané, A. Polimeni, M. Capizzi, X. M. Lu, T. Tiedje, “Bi-induced p-type conductivity in nominally undoped Ga(AsBi),” Appl. Phys. Lett. 100(9), 092109 (2012).
[CrossRef]

G. Pettinari, A. Patané, A. Polimeni, M. Capizzi, X. M. Lu, T. Tiedje, “Effects of hydrogen on the electronic properties of Ga(AsBi) alloys,” Appl. Phys. Lett. 101(22), 222103 (2012).
[CrossRef]

G. Pettinari, H. Engelkamp, P. C. M. Christianen, J. C. Maan, A. Polimeni, M. Capizzi, X. Lu, T. Tiedje, “Compositional evolution of Bi-induced acceptor states in GaAs1−xBix alloy,” Phys. Rev. B 83(20), 201201 (2011).
[CrossRef]

X. Lu, D. A. Beaton, R. B. Lewis, T. Tiedje, Yong Zhang, “Composition dependence of photoluminescence of GaAs1−xBix alloys,” Appl. Phys. Lett. 95(4), 041903 (2009).
[CrossRef]

S. Francoeur, S. Tixier, E. Young, T. Tiedje, A. Mascarenhas, “Bi isoelectronic impurities in GaAs,” Phys. Rev. B 77(8), 085209 (2008).
[CrossRef]

B. Fluegel, S. Francoeur, A. Mascarenhas, S. Tixier, E. C. Young, T. Tiedje, “Giant spin-orbit bowing in GaAs1−xBix,” Phys. Rev. Lett. 97(6), 067205 (2006).
[CrossRef] [PubMed]

S. Francoeur, M. J. Seong, A. Mascarenhas, S. Tixier, M. Adamcyk, T. Tiedje, “Band gap of GaAs1−xBix, 0<x<3.6%,” Appl. Phys. Lett. 82(22), 3874 (2003).
[CrossRef]

Tixier, S.

S. Francoeur, S. Tixier, E. Young, T. Tiedje, A. Mascarenhas, “Bi isoelectronic impurities in GaAs,” Phys. Rev. B 77(8), 085209 (2008).
[CrossRef]

B. Fluegel, S. Francoeur, A. Mascarenhas, S. Tixier, E. C. Young, T. Tiedje, “Giant spin-orbit bowing in GaAs1−xBix,” Phys. Rev. Lett. 97(6), 067205 (2006).
[CrossRef] [PubMed]

S. Francoeur, M. J. Seong, A. Mascarenhas, S. Tixier, M. Adamcyk, T. Tiedje, “Band gap of GaAs1−xBix, 0<x<3.6%,” Appl. Phys. Lett. 82(22), 3874 (2003).
[CrossRef]

Turyanska, L.

M. Henini, J. Ibáñez, M. Schmidbauer, M. Shafi, S. V. Novikov, L. Turyanska, S. I. Molina, D. L. Sales, M. F. Chisholm, J. Misiewicz, “Molecular beam epitaxy of GaBiAs on (311)B GaAs substrates,” Appl. Phys. Lett. 91(25), 251909 (2007).
[CrossRef]

Verma, P.

P. Verma, K. Oe, M. Yamada, H. Harima, M. Herms, G. Irmer, “Raman studies on GaAs1−xBix and InAs1−xBix,” J. Appl. Phys. 89(3), 1657 (2001).
[CrossRef]

Wada, O.

J. Yoshida, T. Kita, O. Wada, K. Oe, “Temperature dependence of GaAs1−xBix band gap studied by photoreflectance spectroscopy,” Jpn. J. Appl. Phys. 42, 371–374 (2003).
[CrossRef]

Walukiewicz, W.

K. Alberi, O. D. Dubon, W. Walukiewicz, K. M. Yu, K. Bertulis, A. Krotkus, “Valence band anticrossing in GaAs1−xBix,” Appl. Phys. Lett. 91(5), 051909 (2007).
[CrossRef]

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K. Wan, J. F. Young, “Interaction of longitudinal-optic phonons with free holes as evidenced in Raman spectra from Be-doped p-type GaAs,” Phys Rev. B. 41(15), 10772 (1990).
[CrossRef]

K. Wan, J. F. Young, R. L. S. Devine, W. T. Moore, A. J. Spring Thorpe, C. J. Miner, P. Mandeville, “Free-carrier density determination in p-type GaAs using Raman scattering from coupled plasmon-phonon modes,” J. Appl. Phys. 63(11), 5598 (1988).
[CrossRef]

Wenzel, M.

G. Irmer, M. Wenzel, J. Monecke, “Light scattering by a multicomponent plasma coupled with longitudinal-optical phonons: Raman spectra of p-type GaAs:Zn,” Phys. Rev. B 56(15), 9524 (1997).
[CrossRef]

Worlock, J. M.

A. Pinczuk, A. A. Ballman, R. E. Nahory, M. A. Pollack, J. M. Worlock, “Raman scattering studies of surface space charge layers and Schottky barrier formation in InP,” J. Vac. Sci. Technol. 16(5), 1168 (1979).
[CrossRef]

Yamada, M.

P. Verma, K. Oe, M. Yamada, H. Harima, M. Herms, G. Irmer, “Raman studies on GaAs1−xBix and InAs1−xBix,” J. Appl. Phys. 89(3), 1657 (2001).
[CrossRef]

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T. Yuasa, S. Naritsuka, M. Mannoh, K. Shinozaki, K. Yamanaka, Y. Nomura, M. Mihara, M. Ishii, “Raman scattering from coupled plasmon-LO-phonon modes in n-type AlxGa1−xAs,” Phys. Rev. B. 33(2), 1222 (1986).
[CrossRef]

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I. T. Yoon, T. W. Kang, “Analysis of Raman scattering of Ga1−xMnxAs dilute magnetic semiconductor,” J. Magn. Magn. Mater. 321(14), 2257–2259 (2009).
[CrossRef]

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J. Yoshida, T. Kita, O. Wada, K. Oe, “Temperature dependence of GaAs1−xBix band gap studied by photoreflectance spectroscopy,” Jpn. J. Appl. Phys. 42, 371–374 (2003).
[CrossRef]

Young, E.

S. Francoeur, S. Tixier, E. Young, T. Tiedje, A. Mascarenhas, “Bi isoelectronic impurities in GaAs,” Phys. Rev. B 77(8), 085209 (2008).
[CrossRef]

Young, E. C.

B. Fluegel, S. Francoeur, A. Mascarenhas, S. Tixier, E. C. Young, T. Tiedje, “Giant spin-orbit bowing in GaAs1−xBix,” Phys. Rev. Lett. 97(6), 067205 (2006).
[CrossRef] [PubMed]

Young, J. F.

K. Wan, J. F. Young, “Interaction of longitudinal-optic phonons with free holes as evidenced in Raman spectra from Be-doped p-type GaAs,” Phys Rev. B. 41(15), 10772 (1990).
[CrossRef]

K. Wan, J. F. Young, R. L. S. Devine, W. T. Moore, A. J. Spring Thorpe, C. J. Miner, P. Mandeville, “Free-carrier density determination in p-type GaAs using Raman scattering from coupled plasmon-phonon modes,” J. Appl. Phys. 63(11), 5598 (1988).
[CrossRef]

Yu, K. M.

K. Alberi, O. D. Dubon, W. Walukiewicz, K. M. Yu, K. Bertulis, A. Krotkus, “Valence band anticrossing in GaAs1−xBix,” Appl. Phys. Lett. 91(5), 051909 (2007).
[CrossRef]

Yuasa, T.

T. Yuasa, S. Naritsuka, M. Mannoh, K. Shinozaki, K. Yamanaka, Y. Nomura, M. Mihara, M. Ishii, “Raman scattering from coupled plasmon-LO-phonon modes in n-type AlxGa1−xAs,” Phys. Rev. B. 33(2), 1222 (1986).
[CrossRef]

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L. H. Dubois, B. R. Zegarski, “Electron-energy-loss study of the space-charge region at semiconductor surfaces,” Phys. Rev. B 35(17), 9128 (1987).
[CrossRef]

Zhang, Yong

X. Lu, D. A. Beaton, R. B. Lewis, T. Tiedje, Yong Zhang, “Composition dependence of photoluminescence of GaAs1−xBix alloys,” Appl. Phys. Lett. 95(4), 041903 (2009).
[CrossRef]

Appl. Phys. Lett.

K. Alberi, O. D. Dubon, W. Walukiewicz, K. M. Yu, K. Bertulis, A. Krotkus, “Valence band anticrossing in GaAs1−xBix,” Appl. Phys. Lett. 91(5), 051909 (2007).
[CrossRef]

S. Francoeur, M. J. Seong, A. Mascarenhas, S. Tixier, M. Adamcyk, T. Tiedje, “Band gap of GaAs1−xBix, 0<x<3.6%,” Appl. Phys. Lett. 82(22), 3874 (2003).
[CrossRef]

K. Bertulis, A. Krotkus, G. Aleksejenko, V. Pačebutas, R. Adomavičius, G. Molis, S. Marcinkevičius, “GaBiAs: A material for optoelectronic terahertz devices,” Appl. Phys. Lett. 88(20), 201112 (2006).
[CrossRef]

S. Nargelas, K. Jaračiūnas, K. Bertulis, V. Pačebutas, “Hole diffusivity in GaAsBi alloys measured by a picosecond transient grating technique,” Appl. Phys. Lett. 98(8), 082115 (2011).
[CrossRef]

G. Pettinari, A. Patané, A. Polimeni, M. Capizzi, X. M. Lu, T. Tiedje, “Bi-induced p-type conductivity in nominally undoped Ga(AsBi),” Appl. Phys. Lett. 100(9), 092109 (2012).
[CrossRef]

G. Pettinari, A. Patané, A. Polimeni, M. Capizzi, X. M. Lu, T. Tiedje, “Effects of hydrogen on the electronic properties of Ga(AsBi) alloys,” Appl. Phys. Lett. 101(22), 222103 (2012).
[CrossRef]

X. Lu, D. A. Beaton, R. B. Lewis, T. Tiedje, Yong Zhang, “Composition dependence of photoluminescence of GaAs1−xBix alloys,” Appl. Phys. Lett. 95(4), 041903 (2009).
[CrossRef]

M. Henini, J. Ibáñez, M. Schmidbauer, M. Shafi, S. V. Novikov, L. Turyanska, S. I. Molina, D. L. Sales, M. F. Chisholm, J. Misiewicz, “Molecular beam epitaxy of GaBiAs on (311)B GaAs substrates,” Appl. Phys. Lett. 91(25), 251909 (2007).
[CrossRef]

N. B. Sedrine, M. Moussa, H. Fitouri, A. Rebey, B. El Jani, R. Chtourou, “Spectroscopic ellipsometry study of GaAs1−xBix material grown on GaAs substrate by atmospheric pressure metal-organic vapor-phase epitaxy,” Appl. Phys. Lett. 95(1), 011910 (2009).
[CrossRef]

J. Appl. Phys.

J. A. Steele, R. A. Lewis, M. Henini, O. M. Lemine, A. Alkaoud, “Raman scattering studies of strain effects in (100) and (311)B GaAs1−xBix epitaxial layers,” J. Appl. Phys. 114(19), 193516 (2013).
[CrossRef]

K. Wan, J. F. Young, R. L. S. Devine, W. T. Moore, A. J. Spring Thorpe, C. J. Miner, P. Mandeville, “Free-carrier density determination in p-type GaAs using Raman scattering from coupled plasmon-phonon modes,” J. Appl. Phys. 63(11), 5598 (1988).
[CrossRef]

A. Mlayah, R. Carles, G. Landa, E. Bedel, A. Muñoz-Yagüe, “Raman study of longitudinal optical phonon-plasmon coupling and disorder effects in heavily Be-doped GaAs,” J. Appl. Phys. 69(7), 4064 (1991).
[CrossRef]

P. Verma, K. Oe, M. Yamada, H. Harima, M. Herms, G. Irmer, “Raman studies on GaAs1−xBix and InAs1−xBix,” J. Appl. Phys. 89(3), 1657 (2001).
[CrossRef]

S. J. Sweeney, S. R. Jin, “Bismide-nitride alloys: Promising for efficient light emitting devices in the near-and mid-infrared,” J. Appl. Phys. 113(4), 043110 (2013).
[CrossRef]

J. Chem. Phys.

M. Kreitman, D. L. Barnett, “Probability tables for clusters of foreign atoms in simple lattices assuming next-nearest-neighbor interactions,” J. Chem. Phys. 43(2), 364 (1965).
[CrossRef]

J. Magn. Magn. Mater.

I. T. Yoon, T. W. Kang, “Analysis of Raman scattering of Ga1−xMnxAs dilute magnetic semiconductor,” J. Magn. Magn. Mater. 321(14), 2257–2259 (2009).
[CrossRef]

J. Phys. Soc. Jpn.

R. Fukasawa, S. Katayama, A. Hasegawa, K. Ohta, “Analysis of Raman spectra from heavily doped p-GaAs,” J. Phys. Soc. Jpn. 57(10), 3632–3640 (1988).
[CrossRef]

J. Vac. Sci. Technol.

A. Pinczuk, A. A. Ballman, R. E. Nahory, M. A. Pollack, J. M. Worlock, “Raman scattering studies of surface space charge layers and Schottky barrier formation in InP,” J. Vac. Sci. Technol. 16(5), 1168 (1979).
[CrossRef]

Jpn. J. Appl. Phys.

K. Oe, “Characteristics of semiconductor alloy GaAs1−xBix,” Jpn. J. Appl. Phys. 41, 2801–2806 (2002).
[CrossRef]

J. Yoshida, T. Kita, O. Wada, K. Oe, “Temperature dependence of GaAs1−xBix band gap studied by photoreflectance spectroscopy,” Jpn. J. Appl. Phys. 42, 371–374 (2003).
[CrossRef]

Phys Rev. B.

K. Wan, J. F. Young, “Interaction of longitudinal-optic phonons with free holes as evidenced in Raman spectra from Be-doped p-type GaAs,” Phys Rev. B. 41(15), 10772 (1990).
[CrossRef]

Phys. Rev. B

L. H. Dubois, B. R. Zegarski, “Electron-energy-loss study of the space-charge region at semiconductor surfaces,” Phys. Rev. B 35(17), 9128 (1987).
[CrossRef]

M. J. Seong, S. H. Chun, H. M. Cheong, N. Samarth, A. Mascarenhas, “Spectroscopic determination of hole density in the ferromagnetic semiconductor Ga1−xMnxAs,” Phys. Rev. B 66(3), 033202 (2002).
[CrossRef]

S. Francoeur, S. Tixier, E. Young, T. Tiedje, A. Mascarenhas, “Bi isoelectronic impurities in GaAs,” Phys. Rev. B 77(8), 085209 (2008).
[CrossRef]

G. Pettinari, H. Engelkamp, P. C. M. Christianen, J. C. Maan, A. Polimeni, M. Capizzi, X. Lu, T. Tiedje, “Compositional evolution of Bi-induced acceptor states in GaAs1−xBix alloy,” Phys. Rev. B 83(20), 201201 (2011).
[CrossRef]

R. Fukasawa, S. Perkowitz, “Raman-scattering spectra of coupled LO-phonon-hole-plasmon modes in p-type GaAs,” Phys. Rev. B 50(19), 14119 (1994).
[CrossRef]

G. Irmer, M. Wenzel, J. Monecke, “Light scattering by a multicomponent plasma coupled with longitudinal-optical phonons: Raman spectra of p-type GaAs:Zn,” Phys. Rev. B 56(15), 9524 (1997).
[CrossRef]

G. Lucovsky, R. M. Martin, E. Burstein, “Localized effective charges in diatomic crystals,” Phys. Rev. B 4(4), 1367 (1971).
[CrossRef]

Phys. Rev. B.

T. Yuasa, S. Naritsuka, M. Mannoh, K. Shinozaki, K. Yamanaka, Y. Nomura, M. Mihara, M. Ishii, “Raman scattering from coupled plasmon-LO-phonon modes in n-type AlxGa1−xAs,” Phys. Rev. B. 33(2), 1222 (1986).
[CrossRef]

Phys. Rev. Lett.

K. Murase, S. Katayama, Y. Ando, H. Kawamura, “Observation of a coupled phonon-damped-plasmon mode in n-GaAs by Raman scattering,” Phys. Rev. Lett. 33, 1481 (1974).
[CrossRef]

B. Fluegel, S. Francoeur, A. Mascarenhas, S. Tixier, E. C. Young, T. Tiedje, “Giant spin-orbit bowing in GaAs1−xBix,” Phys. Rev. Lett. 97(6), 067205 (2006).
[CrossRef] [PubMed]

Phys. Status Solidi B

G. Pettinari, A. Polimeni, M. Capizzi, H. Engelkamp, P. C. M. Christianen, J. C. Maan, A Patané, T. Tiedje, “Effects of Bi incorporation on the electronic properties of GaAs: Carrier masses, hole mobility, and Bi-induced acceptor states,” Phys. Status Solidi B 250(4), 779–786 (2013).
[CrossRef]

Semicond. Sci. Technol.

M. Mbarki, A. Rebey, “First-principles calculation of the physical properties of GaAs1−xBix alloys,” Semicond. Sci. Technol. 26(10), 105020 (2011).
[CrossRef]

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Figures (5)

Fig. 1
Fig. 1

Predicted [17] frequencies of the coupled modes (L+ and L) and the plasma mode (ωp) as a function of hole concentration. The dashed line shows the general behavior of the single damped LOPC mode observed in p-GaAs.

Fig. 2
Fig. 2

RS of (100) GaAs1−xBix for x = 0.043. (a) The two-mode behavior of the ternary alloy in a depolarized quasi-backscattering geometry over Raman shifts of 120–350 cm−1. (b) Expanded over GaAs-like optical frequency range for different polarization configurations (offset vertically for clarity).

Fig. 3
Fig. 3

Normalized RS of GaAs1−xBix for x = 0, 0.018, 0.0274, 0.0301, 0.043, and 0.0478 at room temperature for 633 nm excitation in −z(Y, Y)z scattering geometry. The filled areas give the contribution of distinct modes to the overall fit (solid line) of our data (open circles). For clarity, traces have been normalized and offset vertically. The vacant area corresponds to disorder activated modes.

Fig. 4
Fig. 4

Measurement of frequency shifts of the TO, LO and LOPC bands as a function of Bi fraction. Dashed lines represent the frequencies of the two center optical modes for GaAs (x = 0) and the inset shows the FWHM of each of the modes.

Fig. 5
Fig. 5

(a) Experimentally determined values of ζA for all GaAsBi samples. (b) The theoretically expected [14] values of ζA (solid lines) for p-GaAs as a function of hole concentration. The horizontal and vertical ranges shown are from Pettinari et al. [12] and our optical measurements, respectively. The inset shows ζS for samples set A and B, used to calculate the two theoretical traces.

Equations (7)

Equations on this page are rendered with MathJax. Learn more.

ω ( TO , LO ) ( cm 1 ) = ω ( TO , LO ) 0 + Δ ω ( TO , LO ) × x ,
Γ p = τ 1 = e μ m * ,
d = ( 2 ε 0 ε S V B e p ) 1 / 2 ,
A LO = A 0 [ 1 exp ( 2 α d ) ] .
A 0 = ζ S A LOPC + A LO ,
d = 1 2 α ln ( 1 + ζ A ζ S ) .
p = 8 ε 0 ε S α 2 V B e [ ln ( 1 + ζ A ζ S ) ] 2 .

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