Abstract

We demonstrate that a combination of ultrafast wafer bonded semiconductor disk laser and a bismuth-doped fiber amplifier provides an attractive design for high power 1.33 µm tandem hybrid systems. Over 0.5 W of average output power was achieved at a repetition rate of 827 MHz that corresponds to a pulse energy of 0.62 nJ.

© 2014 Optical Society of America

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    [CrossRef]
  36. T. Jouhti, C. S. Peng, E.-M. Pavelescu, J. Konttinen, L. A. Gomes, O. G. Okhotnikov, M. Pessa, “Strain-compensated GaInNAs structures for 1.3-µm lasers,” IEEE J. Sel. Top. Quantum Electron. 8(4), 787–794 (2002).
    [CrossRef]
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    [CrossRef]
  38. A. Black, A. Hawkins, N. Margalit, D. Babic, J. A. L. Holmes, Y.-L. Chang, P. Abraham, J. E. Bowers, E. Hu, “Wafer fusion: materials issues and device results,” IEEE J. Sel. Top. Quantum Electron. 3(3), 943–951 (1997).
    [CrossRef]
  39. A. Syrbu, J. Fernandez, J. Behrend, C. Berseth, J. Carlin, A. Rudra, E. Kapon, “InGaAs/lnGaAsP/lnP edge emitting laser diodes on p-GaAs substrates obtained by localised wafer fusion,” Electron. Lett. 33(10), 866–868 (1997).
    [CrossRef]
  40. Q.-Y. Tong, U. M. Gösele, “Wafer bonding and layer splitting for microsystems,” Adv. Mater. 11(17), 1409–1425 (1999).
    [CrossRef]
  41. A. K. Mahapatro, A. Scott, A. Manning, D. B. Janes, “Gold surface with sub-nm roughness realized by evaporation on a molecular adhesion monolayer,” Appl. Phys. Lett. 88(15), 151917 (2006).
    [CrossRef]
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  44. D. M. Baney, P. Gallion, R. S. Tucker, “Theory and measurement techniques for the noise figure of optical amplifiers,” Opt. Fiber Technol. 6(2), 122–154 (2000).
    [CrossRef]
  45. U. Keller, A. C. Tropper, “Passively modelocked surface-emitting semiconductor lasers,” Phys. Rep. 429(2), 67–120 (2006).
    [CrossRef]

2013 (5)

2012 (6)

A. Chamorovskiy, J. Kerttula, J. Rautiainen, O. Okhotnikov, “Supercontinuum generation with amplified 1.57 µm picosecond semiconductor disk laser,” Electron. Lett. 48(16), 1010–1012 (2012).
[CrossRef]

M. Scheller, T.-L. Wang, B. Kunert, W. Stolz, S. Koch, J. Moloney, “Passively modelocked VECSEL emitting 682 fs pulses with 5.1 W of average output power,” Electron. Lett. 48(10), 588–589 (2012).
[CrossRef]

B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. Koch, J. Moloney, M. Koch, W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48(9), 516–517 (2012).
[CrossRef]

A. Rantamäki, J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, E. Kapon, O. G. Okhotnikov, “1 W at 785 nm from a frequency-doubled wafer-fused semiconductor disk laser,” Opt. Express 20(8), 9046–9051 (2012).
[CrossRef] [PubMed]

I. Bakish, V. Artel, T. Ilovitsh, M. Shubely, Y. Ben-Ezra, A. Zadok, C. Sukenik, “Self-assembled monolayer assisted bonding of Si and InP,” Opt. Mater. Express 2(8), 1141–1148 (2012).
[CrossRef]

T. Leinonen, V.-M. Korpijärvi, A. Härkönen, M. Guina, “Recent advances in the development of yellow-orange GaInNAs-based semiconductor disk lasers,” Proc. SPIE 8242, 824208 (2012).
[CrossRef]

2011 (4)

2010 (4)

2009 (3)

2008 (5)

2007 (2)

J. Chilla, Q. Shu, H. Zhou, E. Weiss, M. Reed, L. Spinelli, “Recent advances in optically pumped semiconductor lasers,” Proc. SPIE 6451, 645109 (2007).
[CrossRef]

L. Fan, C. Hessenius, M. Fallahi, J. Hader, H. Li, J. V. Moloney, W. Stolz, S. W. Koch, J. T. Murray, R. Bedford, “Highly strained InGaAs/GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170 nm,” Appl. Phys. Lett. 91(13), 131114 (2007).
[CrossRef]

2006 (3)

P. Dupriez, C. Finot, A. Malinowski, J. K. Sahu, J. Nilsson, D. J. Richardson, K. G. Wilcox, H. D. Foreman, A. C. Tropper, “High-power, high repetition rate picosecond and femtosecond sources based on Yb-doped fiber amplification of VECSELs,” Opt. Express 14(21), 9611–9616 (2006).
[CrossRef] [PubMed]

A. K. Mahapatro, A. Scott, A. Manning, D. B. Janes, “Gold surface with sub-nm roughness realized by evaporation on a molecular adhesion monolayer,” Appl. Phys. Lett. 88(15), 151917 (2006).
[CrossRef]

U. Keller, A. C. Tropper, “Passively modelocked surface-emitting semiconductor lasers,” Phys. Rep. 429(2), 67–120 (2006).
[CrossRef]

2004 (1)

K. J. Gordon, V. Fernandez, P. D. Townsend, G. S. Buller, “A short wavelength gigahertz clocked fiber-optic quantum key distribution system,” IEEE J. Quantum Electron. 40(7), 900–908 (2004).
[CrossRef]

2002 (2)

T. Jouhti, C. S. Peng, E.-M. Pavelescu, J. Konttinen, L. A. Gomes, O. G. Okhotnikov, M. Pessa, “Strain-compensated GaInNAs structures for 1.3-µm lasers,” IEEE J. Sel. Top. Quantum Electron. 8(4), 787–794 (2002).
[CrossRef]

L. Brancaleon, H. Moseley, “Laser and non-laser light sources for photodynamic therapy,” Lasers Med. Sci. 17(3), 173–186 (2002).
[CrossRef] [PubMed]

2000 (2)

G. Grosskopf, D. Rohde, R. Eggemann, S. Bauer, C. Bornholdt, M. Möhrle, B. Sartorius, “Optical millimeter-wave generation and wireless data transmission using a dual-mode laser,” IEEE Photon. Technol. Lett. 12(12), 1692–1694 (2000).
[CrossRef]

D. M. Baney, P. Gallion, R. S. Tucker, “Theory and measurement techniques for the noise figure of optical amplifiers,” Opt. Fiber Technol. 6(2), 122–154 (2000).
[CrossRef]

1999 (1)

Q.-Y. Tong, U. M. Gösele, “Wafer bonding and layer splitting for microsystems,” Adv. Mater. 11(17), 1409–1425 (1999).
[CrossRef]

1997 (3)

A. Black, A. Hawkins, N. Margalit, D. Babic, J. A. L. Holmes, Y.-L. Chang, P. Abraham, J. E. Bowers, E. Hu, “Wafer fusion: materials issues and device results,” IEEE J. Sel. Top. Quantum Electron. 3(3), 943–951 (1997).
[CrossRef]

A. Syrbu, J. Fernandez, J. Behrend, C. Berseth, J. Carlin, A. Rudra, E. Kapon, “InGaAs/lnGaAsP/lnP edge emitting laser diodes on p-GaAs substrates obtained by localised wafer fusion,” Electron. Lett. 33(10), 866–868 (1997).
[CrossRef]

A. Homann, A. Melzer, S. Peters, A. Piel, “Determination of the dust screening length by laser-excited lattice waves,” Phys. Rev. E Stat. Phys. Plasmas Fluids Relat. Interdiscip. Topics 56(6), 7138–7141 (1997).
[CrossRef]

1996 (1)

M. Guden, J. Piprek, “Material parameters of quaternary III–V semiconductors for multilayer mirrors at 1.55 m wavelength,” Model. Simul. Mater. Sci. Eng. 4(4), 349–357 (1996).
[CrossRef]

1994 (1)

D. Babic, J. Dudley, K. Streubel, R. Mirin, E. Hu, J. Bowers, “Optically pumped all-epitaxial wafer-fused 1.52 µm vertical-cavity lasers,” Electron. Lett. 30(9), 704–706 (1994).
[CrossRef]

1992 (2)

J. Dudley, M. Ishikawa, D. Babic, B. Miller, R. Mirin, W. Jiang, J. Bowers, E. Hu, “144 °C operation of 1.3 µm InGaAsP vertical cavity lasers on GaAs substrates,” Appl. Phys. Lett. 61(26), 3095–3097 (1992).
[CrossRef]

A. Vogel, R. Birngruber, “Temperature profiles in human retina and choroid during laser coagulation with different wavelengths ranging from 514 to 810 nm,” Laser Light Ophthalmol. 5(1), 9–16 (1992).

Abraham, P.

A. Black, A. Hawkins, N. Margalit, D. Babic, J. A. L. Holmes, Y.-L. Chang, P. Abraham, J. E. Bowers, E. Hu, “Wafer fusion: materials issues and device results,” IEEE J. Sel. Top. Quantum Electron. 3(3), 943–951 (1997).
[CrossRef]

Alam, S.-

C. R. Head, H.-Y. Chan, J. S. Feehan, D. P. Shepherd, S.- Alam, A. C. Tropper, J. H. V. Price, K. G. Wilcox, “Supercontinuum generation with GHz repetition rate femtosecond-pulse fiber-amplified VECSELs,” IEEE Photon. Technol. Lett. 25(5), 464–467 (2013).
[CrossRef]

Alanko, J.-P.

A. Härkönen, C. Grebing, J. Paajaste, R. Koskinen, J.-P. Alanko, S. Suomalainen, G. Steinmeyer, M. Guina, “Modelocked GaSb disk laser producing 384 fs pulses at 2 µm wavelength,” Electron. Lett. 47(7), 454–456 (2011).
[CrossRef]

Artel, V.

Babic, D.

A. Black, A. Hawkins, N. Margalit, D. Babic, J. A. L. Holmes, Y.-L. Chang, P. Abraham, J. E. Bowers, E. Hu, “Wafer fusion: materials issues and device results,” IEEE J. Sel. Top. Quantum Electron. 3(3), 943–951 (1997).
[CrossRef]

D. Babic, J. Dudley, K. Streubel, R. Mirin, E. Hu, J. Bowers, “Optically pumped all-epitaxial wafer-fused 1.52 µm vertical-cavity lasers,” Electron. Lett. 30(9), 704–706 (1994).
[CrossRef]

J. Dudley, M. Ishikawa, D. Babic, B. Miller, R. Mirin, W. Jiang, J. Bowers, E. Hu, “144 °C operation of 1.3 µm InGaAsP vertical cavity lasers on GaAs substrates,” Appl. Phys. Lett. 61(26), 3095–3097 (1992).
[CrossRef]

Bakish, I.

Baney, D. M.

D. M. Baney, P. Gallion, R. S. Tucker, “Theory and measurement techniques for the noise figure of optical amplifiers,” Opt. Fiber Technol. 6(2), 122–154 (2000).
[CrossRef]

Barbarin, Y.

Bauer, S.

G. Grosskopf, D. Rohde, R. Eggemann, S. Bauer, C. Bornholdt, M. Möhrle, B. Sartorius, “Optical millimeter-wave generation and wireless data transmission using a dual-mode laser,” IEEE Photon. Technol. Lett. 12(12), 1692–1694 (2000).
[CrossRef]

Bedford, R.

L. Fan, C. Hessenius, M. Fallahi, J. Hader, H. Li, J. V. Moloney, W. Stolz, S. W. Koch, J. T. Murray, R. Bedford, “Highly strained InGaAs/GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170 nm,” Appl. Phys. Lett. 91(13), 131114 (2007).
[CrossRef]

Beere, H. E.

Behrend, J.

A. Syrbu, J. Fernandez, J. Behrend, C. Berseth, J. Carlin, A. Rudra, E. Kapon, “InGaAs/lnGaAsP/lnP edge emitting laser diodes on p-GaAs substrates obtained by localised wafer fusion,” Electron. Lett. 33(10), 866–868 (1997).
[CrossRef]

Bellancourt, A.-R.

Ben-Ezra, Y.

Berseth, C.

A. Syrbu, J. Fernandez, J. Behrend, C. Berseth, J. Carlin, A. Rudra, E. Kapon, “InGaAs/lnGaAsP/lnP edge emitting laser diodes on p-GaAs substrates obtained by localised wafer fusion,” Electron. Lett. 33(10), 866–868 (1997).
[CrossRef]

Birngruber, R.

A. Vogel, R. Birngruber, “Temperature profiles in human retina and choroid during laser coagulation with different wavelengths ranging from 514 to 810 nm,” Laser Light Ophthalmol. 5(1), 9–16 (1992).

Black, A.

A. Black, A. Hawkins, N. Margalit, D. Babic, J. A. L. Holmes, Y.-L. Chang, P. Abraham, J. E. Bowers, E. Hu, “Wafer fusion: materials issues and device results,” IEEE J. Sel. Top. Quantum Electron. 3(3), 943–951 (1997).
[CrossRef]

Bornholdt, C.

G. Grosskopf, D. Rohde, R. Eggemann, S. Bauer, C. Bornholdt, M. Möhrle, B. Sartorius, “Optical millimeter-wave generation and wireless data transmission using a dual-mode laser,” IEEE Photon. Technol. Lett. 12(12), 1692–1694 (2000).
[CrossRef]

Bowers, J.

D. Babic, J. Dudley, K. Streubel, R. Mirin, E. Hu, J. Bowers, “Optically pumped all-epitaxial wafer-fused 1.52 µm vertical-cavity lasers,” Electron. Lett. 30(9), 704–706 (1994).
[CrossRef]

J. Dudley, M. Ishikawa, D. Babic, B. Miller, R. Mirin, W. Jiang, J. Bowers, E. Hu, “144 °C operation of 1.3 µm InGaAsP vertical cavity lasers on GaAs substrates,” Appl. Phys. Lett. 61(26), 3095–3097 (1992).
[CrossRef]

Bowers, J. E.

A. Black, A. Hawkins, N. Margalit, D. Babic, J. A. L. Holmes, Y.-L. Chang, P. Abraham, J. E. Bowers, E. Hu, “Wafer fusion: materials issues and device results,” IEEE J. Sel. Top. Quantum Electron. 3(3), 943–951 (1997).
[CrossRef]

Brancaleon, L.

L. Brancaleon, H. Moseley, “Laser and non-laser light sources for photodynamic therapy,” Lasers Med. Sci. 17(3), 173–186 (2002).
[CrossRef] [PubMed]

Bufetov, I. A.

R. Gumenyuk, J. Puustinen, A. V. Shubin, I. A. Bufetov, E. M. Dianov, O. G. Okhotnikov, “1.32 μm mode-locked bismuth-doped fiber laser operating in anomalous and normal dispersion regimes,” Opt. Lett. 38(20), 4005–4007 (2013).
[CrossRef] [PubMed]

E. M. Dianov, M. A. Melkumov, A. V. Shubin, S. V. Firstov, V. F. Khopin, A. N. Guryanov, I. A. Bufetov, “Bismuth-doped fibre amplifier for the range 1300–1340 nm,” Quantum Electron. 39(12), 1099–1101 (2009).
[CrossRef]

Buller, G. S.

K. J. Gordon, V. Fernandez, P. D. Townsend, G. S. Buller, “A short wavelength gigahertz clocked fiber-optic quantum key distribution system,” IEEE J. Quantum Electron. 40(7), 900–908 (2004).
[CrossRef]

Caliman, A.

Carlin, J.

A. Syrbu, J. Fernandez, J. Behrend, C. Berseth, J. Carlin, A. Rudra, E. Kapon, “InGaAs/lnGaAsP/lnP edge emitting laser diodes on p-GaAs substrates obtained by localised wafer fusion,” Electron. Lett. 33(10), 866–868 (1997).
[CrossRef]

Chamorovskiy, A.

Chan, H.-Y.

C. R. Head, H.-Y. Chan, J. S. Feehan, D. P. Shepherd, S.- Alam, A. C. Tropper, J. H. V. Price, K. G. Wilcox, “Supercontinuum generation with GHz repetition rate femtosecond-pulse fiber-amplified VECSELs,” IEEE Photon. Technol. Lett. 25(5), 464–467 (2013).
[CrossRef]

Chang, Y.-L.

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A. Homann, A. Melzer, S. Peters, A. Piel, “Determination of the dust screening length by laser-excited lattice waves,” Phys. Rev. E Stat. Phys. Plasmas Fluids Relat. Interdiscip. Topics 56(6), 7138–7141 (1997).
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[CrossRef]

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Ishikawa, M.

J. Dudley, M. Ishikawa, D. Babic, B. Miller, R. Mirin, W. Jiang, J. Bowers, E. Hu, “144 °C operation of 1.3 µm InGaAsP vertical cavity lasers on GaAs substrates,” Appl. Phys. Lett. 61(26), 3095–3097 (1992).
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A. K. Mahapatro, A. Scott, A. Manning, D. B. Janes, “Gold surface with sub-nm roughness realized by evaporation on a molecular adhesion monolayer,” Appl. Phys. Lett. 88(15), 151917 (2006).
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J. Dudley, M. Ishikawa, D. Babic, B. Miller, R. Mirin, W. Jiang, J. Bowers, E. Hu, “144 °C operation of 1.3 µm InGaAsP vertical cavity lasers on GaAs substrates,” Appl. Phys. Lett. 61(26), 3095–3097 (1992).
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Koch, M.

B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. Koch, J. Moloney, M. Koch, W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48(9), 516–517 (2012).
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[CrossRef]

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L. Fan, C. Hessenius, M. Fallahi, J. Hader, H. Li, J. V. Moloney, W. Stolz, S. W. Koch, J. T. Murray, R. Bedford, “Highly strained InGaAs/GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170 nm,” Appl. Phys. Lett. 91(13), 131114 (2007).
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A. Rantamäki, J. Lyytikäinen, J. Heikkinen, J. M. Kontio, O. G. Okhotnikov, “Multi-watt semiconductor disk laser by low temperature wafer bonding,” IEEE Photon. Technol. Lett. 25(22), 2233–2235 (2013).
[CrossRef]

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T. Jouhti, C. S. Peng, E.-M. Pavelescu, J. Konttinen, L. A. Gomes, O. G. Okhotnikov, M. Pessa, “Strain-compensated GaInNAs structures for 1.3-µm lasers,” IEEE J. Sel. Top. Quantum Electron. 8(4), 787–794 (2002).
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T. Leinonen, V.-M. Korpijärvi, A. Härkönen, M. Guina, “Recent advances in the development of yellow-orange GaInNAs-based semiconductor disk lasers,” Proc. SPIE 8242, 824208 (2012).
[CrossRef]

Koskinen, R.

A. Härkönen, C. Grebing, J. Paajaste, R. Koskinen, J.-P. Alanko, S. Suomalainen, G. Steinmeyer, M. Guina, “Modelocked GaSb disk laser producing 384 fs pulses at 2 µm wavelength,” Electron. Lett. 47(7), 454–456 (2011).
[CrossRef]

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Kunert, B.

K. G. Wilcox, A. C. Tropper, H. E. Beere, D. A. Ritchie, B. Kunert, B. Heinen, W. Stolz, “4.35 kW peak power femtosecond pulse mode-locked VECSEL for supercontinuum generation,” Opt. Express 21(2), 1599–1605 (2013).
[CrossRef] [PubMed]

M. Scheller, T.-L. Wang, B. Kunert, W. Stolz, S. Koch, J. Moloney, “Passively modelocked VECSEL emitting 682 fs pulses with 5.1 W of average output power,” Electron. Lett. 48(10), 588–589 (2012).
[CrossRef]

B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. Koch, J. Moloney, M. Koch, W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48(9), 516–517 (2012).
[CrossRef]

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S. Ranta, A. Härkönen, T. Leinonen, L. Orsila, J. Lyytikäinen, G. Steinmeyer, M. Guina, “Mode-locked VECSEL emitting 5 ps pulses at 675 nm,” Opt. Lett. 38(13), 2289–2291 (2013).
[CrossRef] [PubMed]

T. Leinonen, V.-M. Korpijärvi, A. Härkönen, M. Guina, “Recent advances in the development of yellow-orange GaInNAs-based semiconductor disk lasers,” Proc. SPIE 8242, 824208 (2012).
[CrossRef]

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L. Fan, C. Hessenius, M. Fallahi, J. Hader, H. Li, J. V. Moloney, W. Stolz, S. W. Koch, J. T. Murray, R. Bedford, “Highly strained InGaAs/GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170 nm,” Appl. Phys. Lett. 91(13), 131114 (2007).
[CrossRef]

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Lyytikäinen, J.

Maas, D. J.

Mahapatro, A. K.

A. K. Mahapatro, A. Scott, A. Manning, D. B. Janes, “Gold surface with sub-nm roughness realized by evaporation on a molecular adhesion monolayer,” Appl. Phys. Lett. 88(15), 151917 (2006).
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Malinowski, A.

Manning, A.

A. K. Mahapatro, A. Scott, A. Manning, D. B. Janes, “Gold surface with sub-nm roughness realized by evaporation on a molecular adhesion monolayer,” Appl. Phys. Lett. 88(15), 151917 (2006).
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A. Black, A. Hawkins, N. Margalit, D. Babic, J. A. L. Holmes, Y.-L. Chang, P. Abraham, J. E. Bowers, E. Hu, “Wafer fusion: materials issues and device results,” IEEE J. Sel. Top. Quantum Electron. 3(3), 943–951 (1997).
[CrossRef]

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Melkumov, M. A.

E. M. Dianov, M. A. Melkumov, A. V. Shubin, S. V. Firstov, V. F. Khopin, A. N. Guryanov, I. A. Bufetov, “Bismuth-doped fibre amplifier for the range 1300–1340 nm,” Quantum Electron. 39(12), 1099–1101 (2009).
[CrossRef]

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A. Homann, A. Melzer, S. Peters, A. Piel, “Determination of the dust screening length by laser-excited lattice waves,” Phys. Rev. E Stat. Phys. Plasmas Fluids Relat. Interdiscip. Topics 56(6), 7138–7141 (1997).
[CrossRef]

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Mihoubi, Z.

S. P. Elsmere, Z. Mihoubi, A. H. Quarterman, P. Dupriez, J. Nilsson, J. S. Roberts, A. C. Tropper, “High-repetition-rate subpicosecond source of fiber-amplified vertical-external-cavity surface-emitting semiconductor laser pulses,” IEEE Photon. Technol. Lett. 20(8), 623–625 (2008).
[CrossRef]

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J. Dudley, M. Ishikawa, D. Babic, B. Miller, R. Mirin, W. Jiang, J. Bowers, E. Hu, “144 °C operation of 1.3 µm InGaAsP vertical cavity lasers on GaAs substrates,” Appl. Phys. Lett. 61(26), 3095–3097 (1992).
[CrossRef]

Mirin, R.

D. Babic, J. Dudley, K. Streubel, R. Mirin, E. Hu, J. Bowers, “Optically pumped all-epitaxial wafer-fused 1.52 µm vertical-cavity lasers,” Electron. Lett. 30(9), 704–706 (1994).
[CrossRef]

J. Dudley, M. Ishikawa, D. Babic, B. Miller, R. Mirin, W. Jiang, J. Bowers, E. Hu, “144 °C operation of 1.3 µm InGaAsP vertical cavity lasers on GaAs substrates,” Appl. Phys. Lett. 61(26), 3095–3097 (1992).
[CrossRef]

Miyazono, K.

Möhrle, M.

G. Grosskopf, D. Rohde, R. Eggemann, S. Bauer, C. Bornholdt, M. Möhrle, B. Sartorius, “Optical millimeter-wave generation and wireless data transmission using a dual-mode laser,” IEEE Photon. Technol. Lett. 12(12), 1692–1694 (2000).
[CrossRef]

Moloney, J.

M. Scheller, T.-L. Wang, B. Kunert, W. Stolz, S. Koch, J. Moloney, “Passively modelocked VECSEL emitting 682 fs pulses with 5.1 W of average output power,” Electron. Lett. 48(10), 588–589 (2012).
[CrossRef]

B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. Koch, J. Moloney, M. Koch, W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48(9), 516–517 (2012).
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Mori, Y.

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Murray, J. T.

L. Fan, C. Hessenius, M. Fallahi, J. Hader, H. Li, J. V. Moloney, W. Stolz, S. W. Koch, J. T. Murray, R. Bedford, “Highly strained InGaAs/GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170 nm,” Appl. Phys. Lett. 91(13), 131114 (2007).
[CrossRef]

Nikkinen, J.

J. Rautiainen, J. Lyytikäinen, L. Toikkanen, J. Nikkinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, O. G. Okhotnikov, “1.3-µm mode-locked disk laser with wafer fused gain and SESAM structures,” IEEE Photon. Technol. Lett. 22(11), 748–750 (2010).
[CrossRef]

Nilsson, J.

S. P. Elsmere, Z. Mihoubi, A. H. Quarterman, P. Dupriez, J. Nilsson, J. S. Roberts, A. C. Tropper, “High-repetition-rate subpicosecond source of fiber-amplified vertical-external-cavity surface-emitting semiconductor laser pulses,” IEEE Photon. Technol. Lett. 20(8), 623–625 (2008).
[CrossRef]

P. Dupriez, C. Finot, A. Malinowski, J. K. Sahu, J. Nilsson, D. J. Richardson, K. G. Wilcox, H. D. Foreman, A. C. Tropper, “High-power, high repetition rate picosecond and femtosecond sources based on Yb-doped fiber amplification of VECSELs,” Opt. Express 14(21), 9611–9616 (2006).
[CrossRef] [PubMed]

Nishioka, M.

Okhotnikov, O.

A. Chamorovskiy, J. Kerttula, J. Rautiainen, O. Okhotnikov, “Supercontinuum generation with amplified 1.57 µm picosecond semiconductor disk laser,” Electron. Lett. 48(16), 1010–1012 (2012).
[CrossRef]

Okhotnikov, O. G.

R. Gumenyuk, J. Puustinen, A. V. Shubin, I. A. Bufetov, E. M. Dianov, O. G. Okhotnikov, “1.32 μm mode-locked bismuth-doped fiber laser operating in anomalous and normal dispersion regimes,” Opt. Lett. 38(20), 4005–4007 (2013).
[CrossRef] [PubMed]

A. Rantamäki, J. Lyytikäinen, J. Heikkinen, J. M. Kontio, O. G. Okhotnikov, “Multi-watt semiconductor disk laser by low temperature wafer bonding,” IEEE Photon. Technol. Lett. 25(22), 2233–2235 (2013).
[CrossRef]

A. Rantamäki, J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, E. Kapon, O. G. Okhotnikov, “1 W at 785 nm from a frequency-doubled wafer-fused semiconductor disk laser,” Opt. Express 20(8), 9046–9051 (2012).
[CrossRef] [PubMed]

A. Chamorovskiy, J. Rautiainen, A. Rantamäki, K. M. Golant, O. G. Okhotnikov, “1.3 µm Raman-bismuth fiber amplifier pumped by semiconductor disk laser,” Opt. Express 19(7), 6433–6438 (2011).
[CrossRef] [PubMed]

A. Chamorovskiy, J. Rautiainen, A. Rantamäki, O. G. Okhotnikov, “Low-noise Raman fiber amplifier pumped by semiconductor disk laser,” Opt. Express 19(7), 6414–6419 (2011).
[CrossRef] [PubMed]

J. Rautiainen, J. Lyytikäinen, L. Toikkanen, J. Nikkinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, O. G. Okhotnikov, “1.3-µm mode-locked disk laser with wafer fused gain and SESAM structures,” IEEE Photon. Technol. Lett. 22(11), 748–750 (2010).
[CrossRef]

A. Rantamäki, A. Sirbu, A. Mereuta, E. Kapon, O. G. Okhotnikov, “3 W of 650 nm red emission by frequency doubling of wafer-fused semiconductor disk laser,” Opt. Express 18(21), 21645–21650 (2010).
[CrossRef] [PubMed]

J. Lyytikäinen, J. Rautiainen, L. Toikkanen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, O. G. Okhotnikov, “1.3-µm optically-pumped semiconductor disk laser by wafer fusion,” Opt. Express 17(11), 9047–9052 (2009).
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E. J. Saarinen, J. Puustinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, O. G. Okhotnikov, “Power-scalable 1.57 µm mode-locked semiconductor disk laser using wafer fusion,” Opt. Lett. 34(20), 3139–3141 (2009).
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J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, O. G. Okhotnikov, “2.6 W optically-pumped semiconductor disk laser operating at 1.57- µm using wafer fusion,” Opt. Express 16(26), 21881–21886 (2008).
[CrossRef] [PubMed]

T. Jouhti, C. S. Peng, E.-M. Pavelescu, J. Konttinen, L. A. Gomes, O. G. Okhotnikov, M. Pessa, “Strain-compensated GaInNAs structures for 1.3-µm lasers,” IEEE J. Sel. Top. Quantum Electron. 8(4), 787–794 (2002).
[CrossRef]

Orsila, L.

Paajaste, J.

A. Härkönen, C. Grebing, J. Paajaste, R. Koskinen, J.-P. Alanko, S. Suomalainen, G. Steinmeyer, M. Guina, “Modelocked GaSb disk laser producing 384 fs pulses at 2 µm wavelength,” Electron. Lett. 47(7), 454–456 (2011).
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T. Jouhti, C. S. Peng, E.-M. Pavelescu, J. Konttinen, L. A. Gomes, O. G. Okhotnikov, M. Pessa, “Strain-compensated GaInNAs structures for 1.3-µm lasers,” IEEE J. Sel. Top. Quantum Electron. 8(4), 787–794 (2002).
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T. Jouhti, C. S. Peng, E.-M. Pavelescu, J. Konttinen, L. A. Gomes, O. G. Okhotnikov, M. Pessa, “Strain-compensated GaInNAs structures for 1.3-µm lasers,” IEEE J. Sel. Top. Quantum Electron. 8(4), 787–794 (2002).
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T. Jouhti, C. S. Peng, E.-M. Pavelescu, J. Konttinen, L. A. Gomes, O. G. Okhotnikov, M. Pessa, “Strain-compensated GaInNAs structures for 1.3-µm lasers,” IEEE J. Sel. Top. Quantum Electron. 8(4), 787–794 (2002).
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A. Homann, A. Melzer, S. Peters, A. Piel, “Determination of the dust screening length by laser-excited lattice waves,” Phys. Rev. E Stat. Phys. Plasmas Fluids Relat. Interdiscip. Topics 56(6), 7138–7141 (1997).
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Piel, A.

A. Homann, A. Melzer, S. Peters, A. Piel, “Determination of the dust screening length by laser-excited lattice waves,” Phys. Rev. E Stat. Phys. Plasmas Fluids Relat. Interdiscip. Topics 56(6), 7138–7141 (1997).
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C. R. Head, H.-Y. Chan, J. S. Feehan, D. P. Shepherd, S.- Alam, A. C. Tropper, J. H. V. Price, K. G. Wilcox, “Supercontinuum generation with GHz repetition rate femtosecond-pulse fiber-amplified VECSELs,” IEEE Photon. Technol. Lett. 25(5), 464–467 (2013).
[CrossRef]

Puustinen, J.

Quarterman, A. H.

S. P. Elsmere, Z. Mihoubi, A. H. Quarterman, P. Dupriez, J. Nilsson, J. S. Roberts, A. C. Tropper, “High-repetition-rate subpicosecond source of fiber-amplified vertical-external-cavity surface-emitting semiconductor laser pulses,” IEEE Photon. Technol. Lett. 20(8), 623–625 (2008).
[CrossRef]

Rahim, M.

Ranta, S.

Rantamäki, A.

Rattunde, M.

Rautiainen, J.

A. Rantamäki, J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, E. Kapon, O. G. Okhotnikov, “1 W at 785 nm from a frequency-doubled wafer-fused semiconductor disk laser,” Opt. Express 20(8), 9046–9051 (2012).
[CrossRef] [PubMed]

A. Chamorovskiy, J. Kerttula, J. Rautiainen, O. Okhotnikov, “Supercontinuum generation with amplified 1.57 µm picosecond semiconductor disk laser,” Electron. Lett. 48(16), 1010–1012 (2012).
[CrossRef]

A. Chamorovskiy, J. Rautiainen, A. Rantamäki, O. G. Okhotnikov, “Low-noise Raman fiber amplifier pumped by semiconductor disk laser,” Opt. Express 19(7), 6414–6419 (2011).
[CrossRef] [PubMed]

A. Chamorovskiy, J. Rautiainen, A. Rantamäki, K. M. Golant, O. G. Okhotnikov, “1.3 µm Raman-bismuth fiber amplifier pumped by semiconductor disk laser,” Opt. Express 19(7), 6433–6438 (2011).
[CrossRef] [PubMed]

J. Rautiainen, J. Lyytikäinen, L. Toikkanen, J. Nikkinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, O. G. Okhotnikov, “1.3-µm mode-locked disk laser with wafer fused gain and SESAM structures,” IEEE Photon. Technol. Lett. 22(11), 748–750 (2010).
[CrossRef]

J. Lyytikäinen, J. Rautiainen, L. Toikkanen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, O. G. Okhotnikov, “1.3-µm optically-pumped semiconductor disk laser by wafer fusion,” Opt. Express 17(11), 9047–9052 (2009).
[CrossRef] [PubMed]

J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, O. G. Okhotnikov, “2.6 W optically-pumped semiconductor disk laser operating at 1.57- µm using wafer fusion,” Opt. Express 16(26), 21881–21886 (2008).
[CrossRef] [PubMed]

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J. Chilla, Q. Shu, H. Zhou, E. Weiss, M. Reed, L. Spinelli, “Recent advances in optically pumped semiconductor lasers,” Proc. SPIE 6451, 645109 (2007).
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Ritchie, D. A.

Roberts, J. S.

S. P. Elsmere, Z. Mihoubi, A. H. Quarterman, P. Dupriez, J. Nilsson, J. S. Roberts, A. C. Tropper, “High-repetition-rate subpicosecond source of fiber-amplified vertical-external-cavity surface-emitting semiconductor laser pulses,” IEEE Photon. Technol. Lett. 20(8), 623–625 (2008).
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G. Grosskopf, D. Rohde, R. Eggemann, S. Bauer, C. Bornholdt, M. Möhrle, B. Sartorius, “Optical millimeter-wave generation and wireless data transmission using a dual-mode laser,” IEEE Photon. Technol. Lett. 12(12), 1692–1694 (2000).
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Rösener, B.

Rudin, B.

Rudra, A.

A. Syrbu, J. Fernandez, J. Behrend, C. Berseth, J. Carlin, A. Rudra, E. Kapon, “InGaAs/lnGaAsP/lnP edge emitting laser diodes on p-GaAs substrates obtained by localised wafer fusion,” Electron. Lett. 33(10), 866–868 (1997).
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Saarinen, E. J.

Sahu, J. K.

Sartorius, B.

G. Grosskopf, D. Rohde, R. Eggemann, S. Bauer, C. Bornholdt, M. Möhrle, B. Sartorius, “Optical millimeter-wave generation and wireless data transmission using a dual-mode laser,” IEEE Photon. Technol. Lett. 12(12), 1692–1694 (2000).
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Sasaki, T.

Scheller, M.

M. Scheller, T.-L. Wang, B. Kunert, W. Stolz, S. Koch, J. Moloney, “Passively modelocked VECSEL emitting 682 fs pulses with 5.1 W of average output power,” Electron. Lett. 48(10), 588–589 (2012).
[CrossRef]

Scott, A.

A. K. Mahapatro, A. Scott, A. Manning, D. B. Janes, “Gold surface with sub-nm roughness realized by evaporation on a molecular adhesion monolayer,” Appl. Phys. Lett. 88(15), 151917 (2006).
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Shepherd, D. P.

C. R. Head, H.-Y. Chan, J. S. Feehan, D. P. Shepherd, S.- Alam, A. C. Tropper, J. H. V. Price, K. G. Wilcox, “Supercontinuum generation with GHz repetition rate femtosecond-pulse fiber-amplified VECSELs,” IEEE Photon. Technol. Lett. 25(5), 464–467 (2013).
[CrossRef]

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Shimizu, Y.

Shu, Q.

J. Chilla, Q. Shu, H. Zhou, E. Weiss, M. Reed, L. Spinelli, “Recent advances in optically pumped semiconductor lasers,” Proc. SPIE 6451, 645109 (2007).
[CrossRef]

Shubely, M.

Shubin, A. V.

R. Gumenyuk, J. Puustinen, A. V. Shubin, I. A. Bufetov, E. M. Dianov, O. G. Okhotnikov, “1.32 μm mode-locked bismuth-doped fiber laser operating in anomalous and normal dispersion regimes,” Opt. Lett. 38(20), 4005–4007 (2013).
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E. M. Dianov, M. A. Melkumov, A. V. Shubin, S. V. Firstov, V. F. Khopin, A. N. Guryanov, I. A. Bufetov, “Bismuth-doped fibre amplifier for the range 1300–1340 nm,” Quantum Electron. 39(12), 1099–1101 (2009).
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B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. Koch, J. Moloney, M. Koch, W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48(9), 516–517 (2012).
[CrossRef]

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J. Chilla, Q. Shu, H. Zhou, E. Weiss, M. Reed, L. Spinelli, “Recent advances in optically pumped semiconductor lasers,” Proc. SPIE 6451, 645109 (2007).
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Steinmeyer, G.

S. Ranta, A. Härkönen, T. Leinonen, L. Orsila, J. Lyytikäinen, G. Steinmeyer, M. Guina, “Mode-locked VECSEL emitting 5 ps pulses at 675 nm,” Opt. Lett. 38(13), 2289–2291 (2013).
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A. Härkönen, C. Grebing, J. Paajaste, R. Koskinen, J.-P. Alanko, S. Suomalainen, G. Steinmeyer, M. Guina, “Modelocked GaSb disk laser producing 384 fs pulses at 2 µm wavelength,” Electron. Lett. 47(7), 454–456 (2011).
[CrossRef]

Stolz, W.

K. G. Wilcox, A. C. Tropper, H. E. Beere, D. A. Ritchie, B. Kunert, B. Heinen, W. Stolz, “4.35 kW peak power femtosecond pulse mode-locked VECSEL for supercontinuum generation,” Opt. Express 21(2), 1599–1605 (2013).
[CrossRef] [PubMed]

M. Scheller, T.-L. Wang, B. Kunert, W. Stolz, S. Koch, J. Moloney, “Passively modelocked VECSEL emitting 682 fs pulses with 5.1 W of average output power,” Electron. Lett. 48(10), 588–589 (2012).
[CrossRef]

B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. Koch, J. Moloney, M. Koch, W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48(9), 516–517 (2012).
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L. Fan, C. Hessenius, M. Fallahi, J. Hader, H. Li, J. V. Moloney, W. Stolz, S. W. Koch, J. T. Murray, R. Bedford, “Highly strained InGaAs/GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170 nm,” Appl. Phys. Lett. 91(13), 131114 (2007).
[CrossRef]

Streubel, K.

D. Babic, J. Dudley, K. Streubel, R. Mirin, E. Hu, J. Bowers, “Optically pumped all-epitaxial wafer-fused 1.52 µm vertical-cavity lasers,” Electron. Lett. 30(9), 704–706 (1994).
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Sukenik, C.

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A. Härkönen, C. Grebing, J. Paajaste, R. Koskinen, J.-P. Alanko, S. Suomalainen, G. Steinmeyer, M. Guina, “Modelocked GaSb disk laser producing 384 fs pulses at 2 µm wavelength,” Electron. Lett. 47(7), 454–456 (2011).
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A. Syrbu, J. Fernandez, J. Behrend, C. Berseth, J. Carlin, A. Rudra, E. Kapon, “InGaAs/lnGaAsP/lnP edge emitting laser diodes on p-GaAs substrates obtained by localised wafer fusion,” Electron. Lett. 33(10), 866–868 (1997).
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J. Rautiainen, J. Lyytikäinen, L. Toikkanen, J. Nikkinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, O. G. Okhotnikov, “1.3-µm mode-locked disk laser with wafer fused gain and SESAM structures,” IEEE Photon. Technol. Lett. 22(11), 748–750 (2010).
[CrossRef]

J. Lyytikäinen, J. Rautiainen, L. Toikkanen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, O. G. Okhotnikov, “1.3-µm optically-pumped semiconductor disk laser by wafer fusion,” Opt. Express 17(11), 9047–9052 (2009).
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K. J. Gordon, V. Fernandez, P. D. Townsend, G. S. Buller, “A short wavelength gigahertz clocked fiber-optic quantum key distribution system,” IEEE J. Quantum Electron. 40(7), 900–908 (2004).
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Tropper, A. C.

K. G. Wilcox, A. C. Tropper, H. E. Beere, D. A. Ritchie, B. Kunert, B. Heinen, W. Stolz, “4.35 kW peak power femtosecond pulse mode-locked VECSEL for supercontinuum generation,” Opt. Express 21(2), 1599–1605 (2013).
[CrossRef] [PubMed]

C. R. Head, H.-Y. Chan, J. S. Feehan, D. P. Shepherd, S.- Alam, A. C. Tropper, J. H. V. Price, K. G. Wilcox, “Supercontinuum generation with GHz repetition rate femtosecond-pulse fiber-amplified VECSELs,” IEEE Photon. Technol. Lett. 25(5), 464–467 (2013).
[CrossRef]

S. P. Elsmere, Z. Mihoubi, A. H. Quarterman, P. Dupriez, J. Nilsson, J. S. Roberts, A. C. Tropper, “High-repetition-rate subpicosecond source of fiber-amplified vertical-external-cavity surface-emitting semiconductor laser pulses,” IEEE Photon. Technol. Lett. 20(8), 623–625 (2008).
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P. Dupriez, C. Finot, A. Malinowski, J. K. Sahu, J. Nilsson, D. J. Richardson, K. G. Wilcox, H. D. Foreman, A. C. Tropper, “High-power, high repetition rate picosecond and femtosecond sources based on Yb-doped fiber amplification of VECSELs,” Opt. Express 14(21), 9611–9616 (2006).
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U. Keller, A. C. Tropper, “Passively modelocked surface-emitting semiconductor lasers,” Phys. Rep. 429(2), 67–120 (2006).
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A. Vogel, R. Birngruber, “Temperature profiles in human retina and choroid during laser coagulation with different wavelengths ranging from 514 to 810 nm,” Laser Light Ophthalmol. 5(1), 9–16 (1992).

Wagner, J.

Wang, T.-L.

B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. Koch, J. Moloney, M. Koch, W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48(9), 516–517 (2012).
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M. Scheller, T.-L. Wang, B. Kunert, W. Stolz, S. Koch, J. Moloney, “Passively modelocked VECSEL emitting 682 fs pulses with 5.1 W of average output power,” Electron. Lett. 48(10), 588–589 (2012).
[CrossRef]

Weber, A.

B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. Koch, J. Moloney, M. Koch, W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48(9), 516–517 (2012).
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J. Chilla, Q. Shu, H. Zhou, E. Weiss, M. Reed, L. Spinelli, “Recent advances in optically pumped semiconductor lasers,” Proc. SPIE 6451, 645109 (2007).
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Wilcox, K. G.

Wilk, R.

Wittwer, V. J.

Yarborough, J. M.

Yoshimura, M.

Zadok, A.

Zhou, H.

J. Chilla, Q. Shu, H. Zhou, E. Weiss, M. Reed, L. Spinelli, “Recent advances in optically pumped semiconductor lasers,” Proc. SPIE 6451, 645109 (2007).
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Zogg, H.

Adv. Mater. (1)

Q.-Y. Tong, U. M. Gösele, “Wafer bonding and layer splitting for microsystems,” Adv. Mater. 11(17), 1409–1425 (1999).
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Appl. Phys. Lett. (3)

A. K. Mahapatro, A. Scott, A. Manning, D. B. Janes, “Gold surface with sub-nm roughness realized by evaporation on a molecular adhesion monolayer,” Appl. Phys. Lett. 88(15), 151917 (2006).
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J. Dudley, M. Ishikawa, D. Babic, B. Miller, R. Mirin, W. Jiang, J. Bowers, E. Hu, “144 °C operation of 1.3 µm InGaAsP vertical cavity lasers on GaAs substrates,” Appl. Phys. Lett. 61(26), 3095–3097 (1992).
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L. Fan, C. Hessenius, M. Fallahi, J. Hader, H. Li, J. V. Moloney, W. Stolz, S. W. Koch, J. T. Murray, R. Bedford, “Highly strained InGaAs/GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170 nm,” Appl. Phys. Lett. 91(13), 131114 (2007).
[CrossRef]

Electron. Lett. (6)

A. Chamorovskiy, J. Kerttula, J. Rautiainen, O. Okhotnikov, “Supercontinuum generation with amplified 1.57 µm picosecond semiconductor disk laser,” Electron. Lett. 48(16), 1010–1012 (2012).
[CrossRef]

M. Scheller, T.-L. Wang, B. Kunert, W. Stolz, S. Koch, J. Moloney, “Passively modelocked VECSEL emitting 682 fs pulses with 5.1 W of average output power,” Electron. Lett. 48(10), 588–589 (2012).
[CrossRef]

A. Härkönen, C. Grebing, J. Paajaste, R. Koskinen, J.-P. Alanko, S. Suomalainen, G. Steinmeyer, M. Guina, “Modelocked GaSb disk laser producing 384 fs pulses at 2 µm wavelength,” Electron. Lett. 47(7), 454–456 (2011).
[CrossRef]

D. Babic, J. Dudley, K. Streubel, R. Mirin, E. Hu, J. Bowers, “Optically pumped all-epitaxial wafer-fused 1.52 µm vertical-cavity lasers,” Electron. Lett. 30(9), 704–706 (1994).
[CrossRef]

B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. Koch, J. Moloney, M. Koch, W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48(9), 516–517 (2012).
[CrossRef]

A. Syrbu, J. Fernandez, J. Behrend, C. Berseth, J. Carlin, A. Rudra, E. Kapon, “InGaAs/lnGaAsP/lnP edge emitting laser diodes on p-GaAs substrates obtained by localised wafer fusion,” Electron. Lett. 33(10), 866–868 (1997).
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IEEE J. Quantum Electron. (1)

K. J. Gordon, V. Fernandez, P. D. Townsend, G. S. Buller, “A short wavelength gigahertz clocked fiber-optic quantum key distribution system,” IEEE J. Quantum Electron. 40(7), 900–908 (2004).
[CrossRef]

IEEE J. Sel. Top. Quantum Electron. (2)

T. Jouhti, C. S. Peng, E.-M. Pavelescu, J. Konttinen, L. A. Gomes, O. G. Okhotnikov, M. Pessa, “Strain-compensated GaInNAs structures for 1.3-µm lasers,” IEEE J. Sel. Top. Quantum Electron. 8(4), 787–794 (2002).
[CrossRef]

A. Black, A. Hawkins, N. Margalit, D. Babic, J. A. L. Holmes, Y.-L. Chang, P. Abraham, J. E. Bowers, E. Hu, “Wafer fusion: materials issues and device results,” IEEE J. Sel. Top. Quantum Electron. 3(3), 943–951 (1997).
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IEEE Photon. Technol. Lett. (5)

S. P. Elsmere, Z. Mihoubi, A. H. Quarterman, P. Dupriez, J. Nilsson, J. S. Roberts, A. C. Tropper, “High-repetition-rate subpicosecond source of fiber-amplified vertical-external-cavity surface-emitting semiconductor laser pulses,” IEEE Photon. Technol. Lett. 20(8), 623–625 (2008).
[CrossRef]

C. R. Head, H.-Y. Chan, J. S. Feehan, D. P. Shepherd, S.- Alam, A. C. Tropper, J. H. V. Price, K. G. Wilcox, “Supercontinuum generation with GHz repetition rate femtosecond-pulse fiber-amplified VECSELs,” IEEE Photon. Technol. Lett. 25(5), 464–467 (2013).
[CrossRef]

J. Rautiainen, J. Lyytikäinen, L. Toikkanen, J. Nikkinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, O. G. Okhotnikov, “1.3-µm mode-locked disk laser with wafer fused gain and SESAM structures,” IEEE Photon. Technol. Lett. 22(11), 748–750 (2010).
[CrossRef]

A. Rantamäki, J. Lyytikäinen, J. Heikkinen, J. M. Kontio, O. G. Okhotnikov, “Multi-watt semiconductor disk laser by low temperature wafer bonding,” IEEE Photon. Technol. Lett. 25(22), 2233–2235 (2013).
[CrossRef]

G. Grosskopf, D. Rohde, R. Eggemann, S. Bauer, C. Bornholdt, M. Möhrle, B. Sartorius, “Optical millimeter-wave generation and wireless data transmission using a dual-mode laser,” IEEE Photon. Technol. Lett. 12(12), 1692–1694 (2000).
[CrossRef]

Laser Light Ophthalmol. (1)

A. Vogel, R. Birngruber, “Temperature profiles in human retina and choroid during laser coagulation with different wavelengths ranging from 514 to 810 nm,” Laser Light Ophthalmol. 5(1), 9–16 (1992).

Lasers Med. Sci. (1)

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Model. Simul. Mater. Sci. Eng. (1)

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Opt. Express (10)

A. Chamorovskiy, J. Rautiainen, A. Rantamäki, O. G. Okhotnikov, “Low-noise Raman fiber amplifier pumped by semiconductor disk laser,” Opt. Express 19(7), 6414–6419 (2011).
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A. Chamorovskiy, J. Rautiainen, A. Rantamäki, K. M. Golant, O. G. Okhotnikov, “1.3 µm Raman-bismuth fiber amplifier pumped by semiconductor disk laser,” Opt. Express 19(7), 6433–6438 (2011).
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P. Dupriez, C. Finot, A. Malinowski, J. K. Sahu, J. Nilsson, D. J. Richardson, K. G. Wilcox, H. D. Foreman, A. C. Tropper, “High-power, high repetition rate picosecond and femtosecond sources based on Yb-doped fiber amplification of VECSELs,” Opt. Express 14(21), 9611–9616 (2006).
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T. Hochrein, R. Wilk, M. Mei, R. Holzwarth, N. Krumbholz, M. Koch, “Optical sampling by laser cavity tuning,” Opt. Express 18(2), 1613–1617 (2010).
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K. G. Wilcox, A. C. Tropper, H. E. Beere, D. A. Ritchie, B. Kunert, B. Heinen, W. Stolz, “4.35 kW peak power femtosecond pulse mode-locked VECSEL for supercontinuum generation,” Opt. Express 21(2), 1599–1605 (2013).
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J. Lyytikäinen, J. Rautiainen, L. Toikkanen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, O. G. Okhotnikov, “1.3-µm optically-pumped semiconductor disk laser by wafer fusion,” Opt. Express 17(11), 9047–9052 (2009).
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J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, O. G. Okhotnikov, “2.6 W optically-pumped semiconductor disk laser operating at 1.57- µm using wafer fusion,” Opt. Express 16(26), 21881–21886 (2008).
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R. Gumenyuk, J. Puustinen, A. V. Shubin, I. A. Bufetov, E. M. Dianov, O. G. Okhotnikov, “1.32 μm mode-locked bismuth-doped fiber laser operating in anomalous and normal dispersion regimes,” Opt. Lett. 38(20), 4005–4007 (2013).
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Figures (9)

Fig. 1
Fig. 1

A schematic of the W-cavity used for mode locking the seed SDL. The distances between the components SESAM - HR1, HR1 - gain mirror, gain mirror - HR2 and HR2 - POC were approximately 20 mm, 60 mm, 65 mm and 35 mm, respectively. The folding angles of HR1, gain mirror and HR2 were 15°, 12° and 10°, respectively. The pump beam was positioned at an angle of 40° with respect to the gain mirror. HR1 and HR2 have radius of curvatures (RoC) of 30 mm and 150 mm, respectively. The transmittance of the plane output coupler (POC) was 0.5%. HR: high reflective.

Fig. 2
Fig. 2

The output power of the 1.33 µm SDL operating in the CW regime with V- and W-cavities.

Fig. 3
Fig. 3

(a) The power characteristics of the SDL used for pumping the fiber amplifier. (b) Optical spectra of the pump laser for various excitation powers.

Fig. 4
Fig. 4

Refractive index profile of the fiber preform.

Fig. 5
Fig. 5

(a) Pump dependent bismuth fiber absorption at 1230 nm. (b) Spectra of optical loss and gain in bismuth-doped phosphosilicate fiber.

Fig. 6
Fig. 6

A schematic of the master oscillator - power amplifier (MOPA) setup.

Fig. 7
Fig. 7

The amplifier gain with respect to the seed signal power. The 1180 nm pump powers are 1.96, 3.03 and 4.13 W.

Fig. 8
Fig. 8

(a) The optical spectra of the mode-locked seed signal at a pump power of 22.5 W before and after amplification in the bismuth fiber. (b) Oscilloscope trace of the mode-locked signal.

Fig. 9
Fig. 9

(a) The RF spectrum of the amplified signal at the fundamental repetition frequency. Inset shows the RF spectrum over a 12 GHz frequency range. (b) The autocorrelation traces of the 1.33 µm mode-locked semiconductor disk laser at the input and the output of the bismuth fiber amplifier.

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