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Large-size, high-uniformity, random silver nanowire networks as transparent electrodes for crystalline silicon wafer solar cells

Shouyi Xie, Zi Ouyang, Baohua Jia, and Min Gu

Open Access Open Access

Abstract

Metal nanowire networks are emerging as next generation transparent electrodes for photovoltaic devices. We demonstrate the application of random silver nanowire networks as the top electrode on crystalline silicon wafer solar cells. The dependence of transmittance and sheet resistance on the surface coverage is measured. Superior optical and electrical properties are observed due to the large-size, highly-uniform nature of these networks. When applying the nanowire networks on the solar cells with an optimized two-step annealing process, we achieved as large as 19% enhancement on the energy conversion efficiency. The detailed analysis reveals that the enhancement is mainly caused by the improved electrical properties of the solar cells due to the silver nanowire networks. Our result reveals that this technology is a promising alternative transparent electrode technology for crystalline silicon wafer solar cells.

©2013 Optical Society of America

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Figures (4)
Fig. 1
Fig. 1 (a) Schematic diagram of spin-coating a AgNW network on a glass substrate. (b) An SEM image of the spin-coated AgNW network. Inset: a fused junction between two AgNWs after annealing at 200 °C for 30 min.

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Fig. 2
Fig. 2 (a) Measured transmittance with variable sheet resistance (Rsh) of AgNW networks (solid lines), normalized to the transmittance of the bare glass substrate. The measured data for a commercial-grade TCO film (dashed line) is presented as a reference. (b) Number of photons transmitted (NPT) as a function of Rsh for the AgNW networks (red circles). The data for ITO (gray crosses) is presented as a reference [27]. The AgNW networks in the white area can outperform the ITO.

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Fig. 3
Fig. 3 (a) Schematic structure of a crystalline silicon wafer solar cell with a AgNW network as an electrode. (b) Enhancement of efficiency (η), short-circuit current (JSC), fill factor (FF) and open-circuit voltage (VOC) of the solar cells as a function of the annealing time at 400 °C.

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Fig. 4
Fig. 4 (a) Series resistance (Rs) enhancement of the solar cells as a function of the annealing time at 400 °C. (b) – (d) evolution of the AgNW conditions by the annealing time.

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