J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, and W. J. Schaff, “Small band gap bowing in In1−xGaxN alloys,” Appl. Phys. Lett. 80(25), 4741 (2002).
[Crossref]
K. Aryal, B. N. Pantha, J. Li, J. Y. Lin, and H. X. Jiang, “Hydrogen generation by solar water splitting using p-InGaN photoelectrochemical cells,” Appl. Phys. Lett. 96(5), 052110 (2010).
[Crossref]
Z. Yi, J. Ye, N. Kikugawa, T. Kako, S. Ouyang, H. Stuart-Williams, H. Yang, J. Cao, W. Luo, Z. Li, Y. Liu, and R. L. Withers, “An orthophosphate semiconductor with photooxidation properties under visible-light irradiation,” Nat. Mater. 9(7), 559–564 (2010).
[Crossref]
[PubMed]
J. K. Sheu, Y. K. Su, G. C. Chi, M. J. Jou, C. M. Chang, and C. C. Liu, “The indium tin oxide Ohmic contact to highly doped n-GaN,” Solid-State Electron. 43(11), 2081–2084 (1999).
[Crossref]
M. Li, W. Luo, B. Liu, X. Zhao, Z. Li, D. Chen, T. Yu, Z. Xie, R. Zhang, and Z. Zou, “Remarkable enhancement in photocurrent of In0.20Ga0.80N photoanode by using an electrochemical surface treatment,” Appl. Phys. Lett. 99(11), 112108 (2011).
[Crossref]
W. Luo, B. Liu, Z. Li, Z. Xie, D. Chen, Z. Zou, and R. Zhang, “Stable response to visible light of InGaN photoelectrodes,” Appl. Phys. Lett. 92(26), 262110 (2008).
[Crossref]
J. K. Sheu, Y. K. Su, G. C. Chi, M. J. Jou, C. M. Chang, and C. C. Liu, “The indium tin oxide Ohmic contact to highly doped n-GaN,” Solid-State Electron. 43(11), 2081–2084 (1999).
[Crossref]
I. Waki, D. Cohen, R. Lal, U. Mishra, S. P. DenBaars, and S. Nakamura, “Direct water photoelectrolysis with patterned n-GaN,” Appl. Phys. Lett. 91(9), 093519 (2007).
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I. Waki, D. Cohen, R. Lal, U. Mishra, S. P. DenBaars, and S. Nakamura, “Direct water photoelectrolysis with patterned n-GaN,” Appl. Phys. Lett. 91(9), 093519 (2007).
[Crossref]
K. Fujii, M. Ono, T. Ito, Y. Iwaki, A. Hirako, and K. Ohkawa, “Band-edge energies and photoelectrochemical properties of n-Type AlxGa1−xN and InyGa1−yN alloys,” J. Electrochem. Soc. 154(2), B175–B179 (2007).
[Crossref]
A. Fujishima and K. Honda, “Electrochemical photolysis of water at a semiconductor electrode,” Nature 238(5358), 37–38 (1972).
[Crossref]
[PubMed]
W. J. Youngblood, S. H. A. Lee, Y. Kobayashi, E. A. Hernandez-Pagan, P. G. Hoertz, T. A. Moore, A. L. Moore, D. Gust, and T. E. Mallouk, “Photoassisted overall water splitting in a visible light-absorbing dye-sensitized photoelectrochemical cell,” J. Am. Chem. Soc. 131(3), 926–927 (2009).
[Crossref]
[PubMed]
J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, and W. J. Schaff, “Small band gap bowing in In1−xGaxN alloys,” Appl. Phys. Lett. 80(25), 4741 (2002).
[Crossref]
W. J. Youngblood, S. H. A. Lee, Y. Kobayashi, E. A. Hernandez-Pagan, P. G. Hoertz, T. A. Moore, A. L. Moore, D. Gust, and T. E. Mallouk, “Photoassisted overall water splitting in a visible light-absorbing dye-sensitized photoelectrochemical cell,” J. Am. Chem. Soc. 131(3), 926–927 (2009).
[Crossref]
[PubMed]
K. Fujii, M. Ono, T. Ito, Y. Iwaki, A. Hirako, and K. Ohkawa, “Band-edge energies and photoelectrochemical properties of n-Type AlxGa1−xN and InyGa1−yN alloys,” J. Electrochem. Soc. 154(2), B175–B179 (2007).
[Crossref]
W. J. Youngblood, S. H. A. Lee, Y. Kobayashi, E. A. Hernandez-Pagan, P. G. Hoertz, T. A. Moore, A. L. Moore, D. Gust, and T. E. Mallouk, “Photoassisted overall water splitting in a visible light-absorbing dye-sensitized photoelectrochemical cell,” J. Am. Chem. Soc. 131(3), 926–927 (2009).
[Crossref]
[PubMed]
A. Fujishima and K. Honda, “Electrochemical photolysis of water at a semiconductor electrode,” Nature 238(5358), 37–38 (1972).
[Crossref]
[PubMed]
M. L. Lee, J. K. Sheu, and C. C. Hu, “Non-alloyed Cr/Au Ohmic contacts to n-GaN,” Appl. Phys. Lett. 91(18), 182106 (2007).
[Crossref]
S. Y. Liu, J. K. Sheu, M. L. Lee, Y. C. Lin, S. J. Tu, F. W. Huang, and W. C. Lai, “Immersed finger-type indium tin oxide ohmic contacts on p-GaN photoelectrodes for photoelectrochemical hydrogen generation,” Opt. Express 20(S2Suppl 2), A190–A196 (2012).
[Crossref]
[PubMed]
S. Y. Liu, Y. C. Lin, J. C. Ye, S. J. Tu, F. W. Huang, M. L. Lee, W. C. Lai, and J. K. Sheu, “Hydrogen gas generation using n-GaN photoelectrodes with immersed Indium Tin Oxide ohmic contacts,” Opt. Express 19(S6Suppl 6), A1196–A1201 (2011).
[Crossref]
[PubMed]
K. Fujii, M. Ono, T. Ito, Y. Iwaki, A. Hirako, and K. Ohkawa, “Band-edge energies and photoelectrochemical properties of n-Type AlxGa1−xN and InyGa1−yN alloys,” J. Electrochem. Soc. 154(2), B175–B179 (2007).
[Crossref]
K. Fujii, M. Ono, T. Ito, Y. Iwaki, A. Hirako, and K. Ohkawa, “Band-edge energies and photoelectrochemical properties of n-Type AlxGa1−xN and InyGa1−yN alloys,” J. Electrochem. Soc. 154(2), B175–B179 (2007).
[Crossref]
K. Aryal, B. N. Pantha, J. Li, J. Y. Lin, and H. X. Jiang, “Hydrogen generation by solar water splitting using p-InGaN photoelectrochemical cells,” Appl. Phys. Lett. 96(5), 052110 (2010).
[Crossref]
J. Li, J. Y. Lin, and H. X. Jiang, “Direct hydrogen gas generation by using InGaN epilayers as working electrodes,” Appl. Phys. Lett. 93(16), 162107 (2008).
[Crossref]
J. K. Sheu, Y. K. Su, G. C. Chi, M. J. Jou, C. M. Chang, and C. C. Liu, “The indium tin oxide Ohmic contact to highly doped n-GaN,” Solid-State Electron. 43(11), 2081–2084 (1999).
[Crossref]
Z. Yi, J. Ye, N. Kikugawa, T. Kako, S. Ouyang, H. Stuart-Williams, H. Yang, J. Cao, W. Luo, Z. Li, Y. Liu, and R. L. Withers, “An orthophosphate semiconductor with photooxidation properties under visible-light irradiation,” Nat. Mater. 9(7), 559–564 (2010).
[Crossref]
[PubMed]
O. Khaselev and J. A. Turner, “A monolithic photovoltaic-photoelectrochemical device for hydrogen production via water splitting,” Science 280(5362), 425–427 (1998).
[Crossref]
[PubMed]
Z. Yi, J. Ye, N. Kikugawa, T. Kako, S. Ouyang, H. Stuart-Williams, H. Yang, J. Cao, W. Luo, Z. Li, Y. Liu, and R. L. Withers, “An orthophosphate semiconductor with photooxidation properties under visible-light irradiation,” Nat. Mater. 9(7), 559–564 (2010).
[Crossref]
[PubMed]
W. J. Youngblood, S. H. A. Lee, Y. Kobayashi, E. A. Hernandez-Pagan, P. G. Hoertz, T. A. Moore, A. L. Moore, D. Gust, and T. E. Mallouk, “Photoassisted overall water splitting in a visible light-absorbing dye-sensitized photoelectrochemical cell,” J. Am. Chem. Soc. 131(3), 926–927 (2009).
[Crossref]
[PubMed]
S. Y. Liu, J. K. Sheu, M. L. Lee, Y. C. Lin, S. J. Tu, F. W. Huang, and W. C. Lai, “Immersed finger-type indium tin oxide ohmic contacts on p-GaN photoelectrodes for photoelectrochemical hydrogen generation,” Opt. Express 20(S2Suppl 2), A190–A196 (2012).
[Crossref]
[PubMed]
S. Y. Liu, Y. C. Lin, J. C. Ye, S. J. Tu, F. W. Huang, M. L. Lee, W. C. Lai, and J. K. Sheu, “Hydrogen gas generation using n-GaN photoelectrodes with immersed Indium Tin Oxide ohmic contacts,” Opt. Express 19(S6Suppl 6), A1196–A1201 (2011).
[Crossref]
[PubMed]
I. Waki, D. Cohen, R. Lal, U. Mishra, S. P. DenBaars, and S. Nakamura, “Direct water photoelectrolysis with patterned n-GaN,” Appl. Phys. Lett. 91(9), 093519 (2007).
[Crossref]
S. Y. Liu, J. K. Sheu, M. L. Lee, Y. C. Lin, S. J. Tu, F. W. Huang, and W. C. Lai, “Immersed finger-type indium tin oxide ohmic contacts on p-GaN photoelectrodes for photoelectrochemical hydrogen generation,” Opt. Express 20(S2Suppl 2), A190–A196 (2012).
[Crossref]
[PubMed]
S. Y. Liu, Y. C. Lin, J. C. Ye, S. J. Tu, F. W. Huang, M. L. Lee, W. C. Lai, and J. K. Sheu, “Hydrogen gas generation using n-GaN photoelectrodes with immersed Indium Tin Oxide ohmic contacts,” Opt. Express 19(S6Suppl 6), A1196–A1201 (2011).
[Crossref]
[PubMed]
M. L. Lee, J. K. Sheu, and C. C. Hu, “Non-alloyed Cr/Au Ohmic contacts to n-GaN,” Appl. Phys. Lett. 91(18), 182106 (2007).
[Crossref]
W. J. Youngblood, S. H. A. Lee, Y. Kobayashi, E. A. Hernandez-Pagan, P. G. Hoertz, T. A. Moore, A. L. Moore, D. Gust, and T. E. Mallouk, “Photoassisted overall water splitting in a visible light-absorbing dye-sensitized photoelectrochemical cell,” J. Am. Chem. Soc. 131(3), 926–927 (2009).
[Crossref]
[PubMed]
K. Aryal, B. N. Pantha, J. Li, J. Y. Lin, and H. X. Jiang, “Hydrogen generation by solar water splitting using p-InGaN photoelectrochemical cells,” Appl. Phys. Lett. 96(5), 052110 (2010).
[Crossref]
J. Li, J. Y. Lin, and H. X. Jiang, “Direct hydrogen gas generation by using InGaN epilayers as working electrodes,” Appl. Phys. Lett. 93(16), 162107 (2008).
[Crossref]
M. Li, W. Luo, B. Liu, X. Zhao, Z. Li, D. Chen, T. Yu, Z. Xie, R. Zhang, and Z. Zou, “Remarkable enhancement in photocurrent of In0.20Ga0.80N photoanode by using an electrochemical surface treatment,” Appl. Phys. Lett. 99(11), 112108 (2011).
[Crossref]
M. Li, W. Luo, B. Liu, X. Zhao, Z. Li, D. Chen, T. Yu, Z. Xie, R. Zhang, and Z. Zou, “Remarkable enhancement in photocurrent of In0.20Ga0.80N photoanode by using an electrochemical surface treatment,” Appl. Phys. Lett. 99(11), 112108 (2011).
[Crossref]
Z. Yi, J. Ye, N. Kikugawa, T. Kako, S. Ouyang, H. Stuart-Williams, H. Yang, J. Cao, W. Luo, Z. Li, Y. Liu, and R. L. Withers, “An orthophosphate semiconductor with photooxidation properties under visible-light irradiation,” Nat. Mater. 9(7), 559–564 (2010).
[Crossref]
[PubMed]
W. Luo, B. Liu, Z. Li, Z. Xie, D. Chen, Z. Zou, and R. Zhang, “Stable response to visible light of InGaN photoelectrodes,” Appl. Phys. Lett. 92(26), 262110 (2008).
[Crossref]
K. Aryal, B. N. Pantha, J. Li, J. Y. Lin, and H. X. Jiang, “Hydrogen generation by solar water splitting using p-InGaN photoelectrochemical cells,” Appl. Phys. Lett. 96(5), 052110 (2010).
[Crossref]
J. Li, J. Y. Lin, and H. X. Jiang, “Direct hydrogen gas generation by using InGaN epilayers as working electrodes,” Appl. Phys. Lett. 93(16), 162107 (2008).
[Crossref]
S. Y. Liu, J. K. Sheu, M. L. Lee, Y. C. Lin, S. J. Tu, F. W. Huang, and W. C. Lai, “Immersed finger-type indium tin oxide ohmic contacts on p-GaN photoelectrodes for photoelectrochemical hydrogen generation,” Opt. Express 20(S2Suppl 2), A190–A196 (2012).
[Crossref]
[PubMed]
S. Y. Liu, Y. C. Lin, J. C. Ye, S. J. Tu, F. W. Huang, M. L. Lee, W. C. Lai, and J. K. Sheu, “Hydrogen gas generation using n-GaN photoelectrodes with immersed Indium Tin Oxide ohmic contacts,” Opt. Express 19(S6Suppl 6), A1196–A1201 (2011).
[Crossref]
[PubMed]
M. Li, W. Luo, B. Liu, X. Zhao, Z. Li, D. Chen, T. Yu, Z. Xie, R. Zhang, and Z. Zou, “Remarkable enhancement in photocurrent of In0.20Ga0.80N photoanode by using an electrochemical surface treatment,” Appl. Phys. Lett. 99(11), 112108 (2011).
[Crossref]
W. Luo, B. Liu, Z. Li, Z. Xie, D. Chen, Z. Zou, and R. Zhang, “Stable response to visible light of InGaN photoelectrodes,” Appl. Phys. Lett. 92(26), 262110 (2008).
[Crossref]
J. K. Sheu, Y. K. Su, G. C. Chi, M. J. Jou, C. M. Chang, and C. C. Liu, “The indium tin oxide Ohmic contact to highly doped n-GaN,” Solid-State Electron. 43(11), 2081–2084 (1999).
[Crossref]
S. Y. Liu, J. K. Sheu, M. L. Lee, Y. C. Lin, S. J. Tu, F. W. Huang, and W. C. Lai, “Immersed finger-type indium tin oxide ohmic contacts on p-GaN photoelectrodes for photoelectrochemical hydrogen generation,” Opt. Express 20(S2Suppl 2), A190–A196 (2012).
[Crossref]
[PubMed]
S. Y. Liu, Y. C. Lin, J. C. Ye, S. J. Tu, F. W. Huang, M. L. Lee, W. C. Lai, and J. K. Sheu, “Hydrogen gas generation using n-GaN photoelectrodes with immersed Indium Tin Oxide ohmic contacts,” Opt. Express 19(S6Suppl 6), A1196–A1201 (2011).
[Crossref]
[PubMed]
Z. Yi, J. Ye, N. Kikugawa, T. Kako, S. Ouyang, H. Stuart-Williams, H. Yang, J. Cao, W. Luo, Z. Li, Y. Liu, and R. L. Withers, “An orthophosphate semiconductor with photooxidation properties under visible-light irradiation,” Nat. Mater. 9(7), 559–564 (2010).
[Crossref]
[PubMed]
J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, and W. J. Schaff, “Small band gap bowing in In1−xGaxN alloys,” Appl. Phys. Lett. 80(25), 4741 (2002).
[Crossref]
M. Li, W. Luo, B. Liu, X. Zhao, Z. Li, D. Chen, T. Yu, Z. Xie, R. Zhang, and Z. Zou, “Remarkable enhancement in photocurrent of In0.20Ga0.80N photoanode by using an electrochemical surface treatment,” Appl. Phys. Lett. 99(11), 112108 (2011).
[Crossref]
Z. Yi, J. Ye, N. Kikugawa, T. Kako, S. Ouyang, H. Stuart-Williams, H. Yang, J. Cao, W. Luo, Z. Li, Y. Liu, and R. L. Withers, “An orthophosphate semiconductor with photooxidation properties under visible-light irradiation,” Nat. Mater. 9(7), 559–564 (2010).
[Crossref]
[PubMed]
W. Luo, B. Liu, Z. Li, Z. Xie, D. Chen, Z. Zou, and R. Zhang, “Stable response to visible light of InGaN photoelectrodes,” Appl. Phys. Lett. 92(26), 262110 (2008).
[Crossref]
W. J. Youngblood, S. H. A. Lee, Y. Kobayashi, E. A. Hernandez-Pagan, P. G. Hoertz, T. A. Moore, A. L. Moore, D. Gust, and T. E. Mallouk, “Photoassisted overall water splitting in a visible light-absorbing dye-sensitized photoelectrochemical cell,” J. Am. Chem. Soc. 131(3), 926–927 (2009).
[Crossref]
[PubMed]
I. Waki, D. Cohen, R. Lal, U. Mishra, S. P. DenBaars, and S. Nakamura, “Direct water photoelectrolysis with patterned n-GaN,” Appl. Phys. Lett. 91(9), 093519 (2007).
[Crossref]
W. J. Youngblood, S. H. A. Lee, Y. Kobayashi, E. A. Hernandez-Pagan, P. G. Hoertz, T. A. Moore, A. L. Moore, D. Gust, and T. E. Mallouk, “Photoassisted overall water splitting in a visible light-absorbing dye-sensitized photoelectrochemical cell,” J. Am. Chem. Soc. 131(3), 926–927 (2009).
[Crossref]
[PubMed]
W. J. Youngblood, S. H. A. Lee, Y. Kobayashi, E. A. Hernandez-Pagan, P. G. Hoertz, T. A. Moore, A. L. Moore, D. Gust, and T. E. Mallouk, “Photoassisted overall water splitting in a visible light-absorbing dye-sensitized photoelectrochemical cell,” J. Am. Chem. Soc. 131(3), 926–927 (2009).
[Crossref]
[PubMed]
I. Waki, D. Cohen, R. Lal, U. Mishra, S. P. DenBaars, and S. Nakamura, “Direct water photoelectrolysis with patterned n-GaN,” Appl. Phys. Lett. 91(9), 093519 (2007).
[Crossref]
K. Fujii, M. Ono, T. Ito, Y. Iwaki, A. Hirako, and K. Ohkawa, “Band-edge energies and photoelectrochemical properties of n-Type AlxGa1−xN and InyGa1−yN alloys,” J. Electrochem. Soc. 154(2), B175–B179 (2007).
[Crossref]
K. Fujii, M. Ono, T. Ito, Y. Iwaki, A. Hirako, and K. Ohkawa, “Band-edge energies and photoelectrochemical properties of n-Type AlxGa1−xN and InyGa1−yN alloys,” J. Electrochem. Soc. 154(2), B175–B179 (2007).
[Crossref]
Z. Yi, J. Ye, N. Kikugawa, T. Kako, S. Ouyang, H. Stuart-Williams, H. Yang, J. Cao, W. Luo, Z. Li, Y. Liu, and R. L. Withers, “An orthophosphate semiconductor with photooxidation properties under visible-light irradiation,” Nat. Mater. 9(7), 559–564 (2010).
[Crossref]
[PubMed]
K. Aryal, B. N. Pantha, J. Li, J. Y. Lin, and H. X. Jiang, “Hydrogen generation by solar water splitting using p-InGaN photoelectrochemical cells,” Appl. Phys. Lett. 96(5), 052110 (2010).
[Crossref]
J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, and W. J. Schaff, “Small band gap bowing in In1−xGaxN alloys,” Appl. Phys. Lett. 80(25), 4741 (2002).
[Crossref]
A. Siegel and T. Schott, “Optimization of photovoltaic hydrogen production,” Int. J. Hydrogen Energy 13(11), 659–675 (1988).
[Crossref]
S. Y. Liu, J. K. Sheu, M. L. Lee, Y. C. Lin, S. J. Tu, F. W. Huang, and W. C. Lai, “Immersed finger-type indium tin oxide ohmic contacts on p-GaN photoelectrodes for photoelectrochemical hydrogen generation,” Opt. Express 20(S2Suppl 2), A190–A196 (2012).
[Crossref]
[PubMed]
S. Y. Liu, Y. C. Lin, J. C. Ye, S. J. Tu, F. W. Huang, M. L. Lee, W. C. Lai, and J. K. Sheu, “Hydrogen gas generation using n-GaN photoelectrodes with immersed Indium Tin Oxide ohmic contacts,” Opt. Express 19(S6Suppl 6), A1196–A1201 (2011).
[Crossref]
[PubMed]
M. L. Lee, J. K. Sheu, and C. C. Hu, “Non-alloyed Cr/Au Ohmic contacts to n-GaN,” Appl. Phys. Lett. 91(18), 182106 (2007).
[Crossref]
J. K. Sheu, Y. K. Su, G. C. Chi, M. J. Jou, C. M. Chang, and C. C. Liu, “The indium tin oxide Ohmic contact to highly doped n-GaN,” Solid-State Electron. 43(11), 2081–2084 (1999).
[Crossref]
A. Siegel and T. Schott, “Optimization of photovoltaic hydrogen production,” Int. J. Hydrogen Energy 13(11), 659–675 (1988).
[Crossref]
Z. Yi, J. Ye, N. Kikugawa, T. Kako, S. Ouyang, H. Stuart-Williams, H. Yang, J. Cao, W. Luo, Z. Li, Y. Liu, and R. L. Withers, “An orthophosphate semiconductor with photooxidation properties under visible-light irradiation,” Nat. Mater. 9(7), 559–564 (2010).
[Crossref]
[PubMed]
J. K. Sheu, Y. K. Su, G. C. Chi, M. J. Jou, C. M. Chang, and C. C. Liu, “The indium tin oxide Ohmic contact to highly doped n-GaN,” Solid-State Electron. 43(11), 2081–2084 (1999).
[Crossref]
S. Y. Liu, J. K. Sheu, M. L. Lee, Y. C. Lin, S. J. Tu, F. W. Huang, and W. C. Lai, “Immersed finger-type indium tin oxide ohmic contacts on p-GaN photoelectrodes for photoelectrochemical hydrogen generation,” Opt. Express 20(S2Suppl 2), A190–A196 (2012).
[Crossref]
[PubMed]
S. Y. Liu, Y. C. Lin, J. C. Ye, S. J. Tu, F. W. Huang, M. L. Lee, W. C. Lai, and J. K. Sheu, “Hydrogen gas generation using n-GaN photoelectrodes with immersed Indium Tin Oxide ohmic contacts,” Opt. Express 19(S6Suppl 6), A1196–A1201 (2011).
[Crossref]
[PubMed]
O. Khaselev and J. A. Turner, “A monolithic photovoltaic-photoelectrochemical device for hydrogen production via water splitting,” Science 280(5362), 425–427 (1998).
[Crossref]
[PubMed]
I. Waki, D. Cohen, R. Lal, U. Mishra, S. P. DenBaars, and S. Nakamura, “Direct water photoelectrolysis with patterned n-GaN,” Appl. Phys. Lett. 91(9), 093519 (2007).
[Crossref]
J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, and W. J. Schaff, “Small band gap bowing in In1−xGaxN alloys,” Appl. Phys. Lett. 80(25), 4741 (2002).
[Crossref]
Z. Yi, J. Ye, N. Kikugawa, T. Kako, S. Ouyang, H. Stuart-Williams, H. Yang, J. Cao, W. Luo, Z. Li, Y. Liu, and R. L. Withers, “An orthophosphate semiconductor with photooxidation properties under visible-light irradiation,” Nat. Mater. 9(7), 559–564 (2010).
[Crossref]
[PubMed]
J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, and W. J. Schaff, “Small band gap bowing in In1−xGaxN alloys,” Appl. Phys. Lett. 80(25), 4741 (2002).
[Crossref]
M. Li, W. Luo, B. Liu, X. Zhao, Z. Li, D. Chen, T. Yu, Z. Xie, R. Zhang, and Z. Zou, “Remarkable enhancement in photocurrent of In0.20Ga0.80N photoanode by using an electrochemical surface treatment,” Appl. Phys. Lett. 99(11), 112108 (2011).
[Crossref]
W. Luo, B. Liu, Z. Li, Z. Xie, D. Chen, Z. Zou, and R. Zhang, “Stable response to visible light of InGaN photoelectrodes,” Appl. Phys. Lett. 92(26), 262110 (2008).
[Crossref]
Z. Yi, J. Ye, N. Kikugawa, T. Kako, S. Ouyang, H. Stuart-Williams, H. Yang, J. Cao, W. Luo, Z. Li, Y. Liu, and R. L. Withers, “An orthophosphate semiconductor with photooxidation properties under visible-light irradiation,” Nat. Mater. 9(7), 559–564 (2010).
[Crossref]
[PubMed]
Z. Yi, J. Ye, N. Kikugawa, T. Kako, S. Ouyang, H. Stuart-Williams, H. Yang, J. Cao, W. Luo, Z. Li, Y. Liu, and R. L. Withers, “An orthophosphate semiconductor with photooxidation properties under visible-light irradiation,” Nat. Mater. 9(7), 559–564 (2010).
[Crossref]
[PubMed]
S. Y. Liu, Y. C. Lin, J. C. Ye, S. J. Tu, F. W. Huang, M. L. Lee, W. C. Lai, and J. K. Sheu, “Hydrogen gas generation using n-GaN photoelectrodes with immersed Indium Tin Oxide ohmic contacts,” Opt. Express 19(S6Suppl 6), A1196–A1201 (2011).
[Crossref]
[PubMed]
Z. Yi, J. Ye, N. Kikugawa, T. Kako, S. Ouyang, H. Stuart-Williams, H. Yang, J. Cao, W. Luo, Z. Li, Y. Liu, and R. L. Withers, “An orthophosphate semiconductor with photooxidation properties under visible-light irradiation,” Nat. Mater. 9(7), 559–564 (2010).
[Crossref]
[PubMed]
W. J. Youngblood, S. H. A. Lee, Y. Kobayashi, E. A. Hernandez-Pagan, P. G. Hoertz, T. A. Moore, A. L. Moore, D. Gust, and T. E. Mallouk, “Photoassisted overall water splitting in a visible light-absorbing dye-sensitized photoelectrochemical cell,” J. Am. Chem. Soc. 131(3), 926–927 (2009).
[Crossref]
[PubMed]
J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, and W. J. Schaff, “Small band gap bowing in In1−xGaxN alloys,” Appl. Phys. Lett. 80(25), 4741 (2002).
[Crossref]
M. Li, W. Luo, B. Liu, X. Zhao, Z. Li, D. Chen, T. Yu, Z. Xie, R. Zhang, and Z. Zou, “Remarkable enhancement in photocurrent of In0.20Ga0.80N photoanode by using an electrochemical surface treatment,” Appl. Phys. Lett. 99(11), 112108 (2011).
[Crossref]
M. Li, W. Luo, B. Liu, X. Zhao, Z. Li, D. Chen, T. Yu, Z. Xie, R. Zhang, and Z. Zou, “Remarkable enhancement in photocurrent of In0.20Ga0.80N photoanode by using an electrochemical surface treatment,” Appl. Phys. Lett. 99(11), 112108 (2011).
[Crossref]
W. Luo, B. Liu, Z. Li, Z. Xie, D. Chen, Z. Zou, and R. Zhang, “Stable response to visible light of InGaN photoelectrodes,” Appl. Phys. Lett. 92(26), 262110 (2008).
[Crossref]
M. Li, W. Luo, B. Liu, X. Zhao, Z. Li, D. Chen, T. Yu, Z. Xie, R. Zhang, and Z. Zou, “Remarkable enhancement in photocurrent of In0.20Ga0.80N photoanode by using an electrochemical surface treatment,” Appl. Phys. Lett. 99(11), 112108 (2011).
[Crossref]
M. Li, W. Luo, B. Liu, X. Zhao, Z. Li, D. Chen, T. Yu, Z. Xie, R. Zhang, and Z. Zou, “Remarkable enhancement in photocurrent of In0.20Ga0.80N photoanode by using an electrochemical surface treatment,” Appl. Phys. Lett. 99(11), 112108 (2011).
[Crossref]
W. Luo, B. Liu, Z. Li, Z. Xie, D. Chen, Z. Zou, and R. Zhang, “Stable response to visible light of InGaN photoelectrodes,” Appl. Phys. Lett. 92(26), 262110 (2008).
[Crossref]