InGaN working electrodes with assisted bias generated from GaAs solar cells for efficient water splitting

S. Y. Liu, J. K. Sheu, M. L. Lee, Y. C. Lin, S. J. Tu, F. W. Huang, and W. C. Lai, “Immersed finger-type indium tin oxide ohmic contacts on p-GaN photoelectrodes for photoelectrochemical hydrogen generation,” Opt. Express 20(S2Suppl 2), A190–A196 (2012).
[Crossref] [PubMed]

M. Li, W. Luo, B. Liu, X. Zhao, Z. Li, D. Chen, T. Yu, Z. Xie, R. Zhang, and Z. Zou, “Remarkable enhancement in photocurrent of In0.20Ga0.80N photoanode by using an electrochemical surface treatment,” Appl. Phys. Lett. 99(11), 112108 (2011).
[Crossref]

S. Y. Liu, Y. C. Lin, J. C. Ye, S. J. Tu, F. W. Huang, M. L. Lee, W. C. Lai, and J. K. Sheu, “Hydrogen gas generation using n-GaN photoelectrodes with immersed Indium Tin Oxide ohmic contacts,” Opt. Express 19(S6Suppl 6), A1196–A1201 (2011).
[Crossref] [PubMed]

K. Aryal, B. N. Pantha, J. Li, J. Y. Lin, and H. X. Jiang, “Hydrogen generation by solar water splitting using p-InGaN photoelectrochemical cells,” Appl. Phys. Lett. 96(5), 052110 (2010).
[Crossref]

Z. Yi, J. Ye, N. Kikugawa, T. Kako, S. Ouyang, H. Stuart-Williams, H. Yang, J. Cao, W. Luo, Z. Li, Y. Liu, and R. L. Withers, “An orthophosphate semiconductor with photooxidation properties under visible-light irradiation,” Nat. Mater. 9(7), 559–564 (2010).
[Crossref] [PubMed]

W. J. Youngblood, S. H. A. Lee, Y. Kobayashi, E. A. Hernandez-Pagan, P. G. Hoertz, T. A. Moore, A. L. Moore, D. Gust, and T. E. Mallouk, “Photoassisted overall water splitting in a visible light-absorbing dye-sensitized photoelectrochemical cell,” J. Am. Chem. Soc. 131(3), 926–927 (2009).
[Crossref] [PubMed]

J. Li, J. Y. Lin, and H. X. Jiang, “Direct hydrogen gas generation by using InGaN epilayers as working electrodes,” Appl. Phys. Lett. 93(16), 162107 (2008).
[Crossref]

W. Luo, B. Liu, Z. Li, Z. Xie, D. Chen, Z. Zou, and R. Zhang, “Stable response to visible light of InGaN photoelectrodes,” Appl. Phys. Lett. 92(26), 262110 (2008).
[Crossref]

K. Fujii, M. Ono, T. Ito, Y. Iwaki, A. Hirako, and K. Ohkawa, “Band-edge energies and photoelectrochemical properties of n-Type AlxGa1−xN and InyGa1−yN alloys,” J. Electrochem. Soc. 154(2), B175–B179 (2007).
[Crossref]

I. Waki, D. Cohen, R. Lal, U. Mishra, S. P. DenBaars, and S. Nakamura, “Direct water photoelectrolysis with patterned n-GaN,” Appl. Phys. Lett. 91(9), 093519 (2007).
[Crossref]

M. L. Lee, J. K. Sheu, and C. C. Hu, “Non-alloyed Cr/Au Ohmic contacts to n-GaN,” Appl. Phys. Lett. 91(18), 182106 (2007).
[Crossref]

A. Currao, “Photoelectrochemical water splitting,” Chimia (Aarau) 61(12), 815–819 (2007).
[Crossref]

J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, and W. J. Schaff, “Small band gap bowing in In1−xGaxN alloys,” Appl. Phys. Lett. 80(25), 4741 (2002).
[Crossref]

J. K. Sheu, Y. K. Su, G. C. Chi, M. J. Jou, C. M. Chang, and C. C. Liu, “The indium tin oxide Ohmic contact to highly doped n-GaN,” Solid-State Electron. 43(11), 2081–2084 (1999).
[Crossref]

O. Khaselev and J. A. Turner, “A monolithic photovoltaic-photoelectrochemical device for hydrogen production via water splitting,” Science 280(5362), 425–427 (1998).
[Crossref] [PubMed]

A. Siegel and T. Schott, “Optimization of photovoltaic hydrogen production,” Int. J. Hydrogen Energy 13(11), 659–675 (1988).
[Crossref]

A. Fujishima and K. Honda, “Electrochemical photolysis of water at a semiconductor electrode,” Nature 238(5358), 37–38 (1972).
[Crossref] [PubMed]

J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, and W. J. Schaff, “Small band gap bowing in In1−xGaxN alloys,” Appl. Phys. Lett. 80(25), 4741 (2002).
[Crossref]

K. Aryal, B. N. Pantha, J. Li, J. Y. Lin, and H. X. Jiang, “Hydrogen generation by solar water splitting using p-InGaN photoelectrochemical cells,” Appl. Phys. Lett. 96(5), 052110 (2010).
[Crossref]

Z. Yi, J. Ye, N. Kikugawa, T. Kako, S. Ouyang, H. Stuart-Williams, H. Yang, J. Cao, W. Luo, Z. Li, Y. Liu, and R. L. Withers, “An orthophosphate semiconductor with photooxidation properties under visible-light irradiation,” Nat. Mater. 9(7), 559–564 (2010).
[Crossref] [PubMed]

J. K. Sheu, Y. K. Su, G. C. Chi, M. J. Jou, C. M. Chang, and C. C. Liu, “The indium tin oxide Ohmic contact to highly doped n-GaN,” Solid-State Electron. 43(11), 2081–2084 (1999).
[Crossref]

M. Li, W. Luo, B. Liu, X. Zhao, Z. Li, D. Chen, T. Yu, Z. Xie, R. Zhang, and Z. Zou, “Remarkable enhancement in photocurrent of In0.20Ga0.80N photoanode by using an electrochemical surface treatment,” Appl. Phys. Lett. 99(11), 112108 (2011).
[Crossref]

W. Luo, B. Liu, Z. Li, Z. Xie, D. Chen, Z. Zou, and R. Zhang, “Stable response to visible light of InGaN photoelectrodes,” Appl. Phys. Lett. 92(26), 262110 (2008).
[Crossref]

J. K. Sheu, Y. K. Su, G. C. Chi, M. J. Jou, C. M. Chang, and C. C. Liu, “The indium tin oxide Ohmic contact to highly doped n-GaN,” Solid-State Electron. 43(11), 2081–2084 (1999).
[Crossref]

I. Waki, D. Cohen, R. Lal, U. Mishra, S. P. DenBaars, and S. Nakamura, “Direct water photoelectrolysis with patterned n-GaN,” Appl. Phys. Lett. 91(9), 093519 (2007).
[Crossref]

A. Currao, “Photoelectrochemical water splitting,” Chimia (Aarau) 61(12), 815–819 (2007).
[Crossref]

I. Waki, D. Cohen, R. Lal, U. Mishra, S. P. DenBaars, and S. Nakamura, “Direct water photoelectrolysis with patterned n-GaN,” Appl. Phys. Lett. 91(9), 093519 (2007).
[Crossref]

K. Fujii, M. Ono, T. Ito, Y. Iwaki, A. Hirako, and K. Ohkawa, “Band-edge energies and photoelectrochemical properties of n-Type AlxGa1−xN and InyGa1−yN alloys,” J. Electrochem. Soc. 154(2), B175–B179 (2007).
[Crossref]

A. Fujishima and K. Honda, “Electrochemical photolysis of water at a semiconductor electrode,” Nature 238(5358), 37–38 (1972).
[Crossref] [PubMed]

W. J. Youngblood, S. H. A. Lee, Y. Kobayashi, E. A. Hernandez-Pagan, P. G. Hoertz, T. A. Moore, A. L. Moore, D. Gust, and T. E. Mallouk, “Photoassisted overall water splitting in a visible light-absorbing dye-sensitized photoelectrochemical cell,” J. Am. Chem. Soc. 131(3), 926–927 (2009).
[Crossref] [PubMed]

J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, and W. J. Schaff, “Small band gap bowing in In1−xGaxN alloys,” Appl. Phys. Lett. 80(25), 4741 (2002).
[Crossref]

W. J. Youngblood, S. H. A. Lee, Y. Kobayashi, E. A. Hernandez-Pagan, P. G. Hoertz, T. A. Moore, A. L. Moore, D. Gust, and T. E. Mallouk, “Photoassisted overall water splitting in a visible light-absorbing dye-sensitized photoelectrochemical cell,” J. Am. Chem. Soc. 131(3), 926–927 (2009).
[Crossref] [PubMed]

K. Fujii, M. Ono, T. Ito, Y. Iwaki, A. Hirako, and K. Ohkawa, “Band-edge energies and photoelectrochemical properties of n-Type AlxGa1−xN and InyGa1−yN alloys,” J. Electrochem. Soc. 154(2), B175–B179 (2007).
[Crossref]

W. J. Youngblood, S. H. A. Lee, Y. Kobayashi, E. A. Hernandez-Pagan, P. G. Hoertz, T. A. Moore, A. L. Moore, D. Gust, and T. E. Mallouk, “Photoassisted overall water splitting in a visible light-absorbing dye-sensitized photoelectrochemical cell,” J. Am. Chem. Soc. 131(3), 926–927 (2009).
[Crossref] [PubMed]

A. Fujishima and K. Honda, “Electrochemical photolysis of water at a semiconductor electrode,” Nature 238(5358), 37–38 (1972).
[Crossref] [PubMed]

M. L. Lee, J. K. Sheu, and C. C. Hu, “Non-alloyed Cr/Au Ohmic contacts to n-GaN,” Appl. Phys. Lett. 91(18), 182106 (2007).
[Crossref]

S. Y. Liu, J. K. Sheu, M. L. Lee, Y. C. Lin, S. J. Tu, F. W. Huang, and W. C. Lai, “Immersed finger-type indium tin oxide ohmic contacts on p-GaN photoelectrodes for photoelectrochemical hydrogen generation,” Opt. Express 20(S2Suppl 2), A190–A196 (2012).
[Crossref] [PubMed]

S. Y. Liu, Y. C. Lin, J. C. Ye, S. J. Tu, F. W. Huang, M. L. Lee, W. C. Lai, and J. K. Sheu, “Hydrogen gas generation using n-GaN photoelectrodes with immersed Indium Tin Oxide ohmic contacts,” Opt. Express 19(S6Suppl 6), A1196–A1201 (2011).
[Crossref] [PubMed]

K. Fujii, M. Ono, T. Ito, Y. Iwaki, A. Hirako, and K. Ohkawa, “Band-edge energies and photoelectrochemical properties of n-Type AlxGa1−xN and InyGa1−yN alloys,” J. Electrochem. Soc. 154(2), B175–B179 (2007).
[Crossref]

K. Fujii, M. Ono, T. Ito, Y. Iwaki, A. Hirako, and K. Ohkawa, “Band-edge energies and photoelectrochemical properties of n-Type AlxGa1−xN and InyGa1−yN alloys,” J. Electrochem. Soc. 154(2), B175–B179 (2007).
[Crossref]

K. Aryal, B. N. Pantha, J. Li, J. Y. Lin, and H. X. Jiang, “Hydrogen generation by solar water splitting using p-InGaN photoelectrochemical cells,” Appl. Phys. Lett. 96(5), 052110 (2010).
[Crossref]

J. Li, J. Y. Lin, and H. X. Jiang, “Direct hydrogen gas generation by using InGaN epilayers as working electrodes,” Appl. Phys. Lett. 93(16), 162107 (2008).
[Crossref]

J. K. Sheu, Y. K. Su, G. C. Chi, M. J. Jou, C. M. Chang, and C. C. Liu, “The indium tin oxide Ohmic contact to highly doped n-GaN,” Solid-State Electron. 43(11), 2081–2084 (1999).
[Crossref]

Z. Yi, J. Ye, N. Kikugawa, T. Kako, S. Ouyang, H. Stuart-Williams, H. Yang, J. Cao, W. Luo, Z. Li, Y. Liu, and R. L. Withers, “An orthophosphate semiconductor with photooxidation properties under visible-light irradiation,” Nat. Mater. 9(7), 559–564 (2010).
[Crossref] [PubMed]

O. Khaselev and J. A. Turner, “A monolithic photovoltaic-photoelectrochemical device for hydrogen production via water splitting,” Science 280(5362), 425–427 (1998).
[Crossref] [PubMed]

Z. Yi, J. Ye, N. Kikugawa, T. Kako, S. Ouyang, H. Stuart-Williams, H. Yang, J. Cao, W. Luo, Z. Li, Y. Liu, and R. L. Withers, “An orthophosphate semiconductor with photooxidation properties under visible-light irradiation,” Nat. Mater. 9(7), 559–564 (2010).
[Crossref] [PubMed]

W. J. Youngblood, S. H. A. Lee, Y. Kobayashi, E. A. Hernandez-Pagan, P. G. Hoertz, T. A. Moore, A. L. Moore, D. Gust, and T. E. Mallouk, “Photoassisted overall water splitting in a visible light-absorbing dye-sensitized photoelectrochemical cell,” J. Am. Chem. Soc. 131(3), 926–927 (2009).
[Crossref] [PubMed]

S. Y. Liu, J. K. Sheu, M. L. Lee, Y. C. Lin, S. J. Tu, F. W. Huang, and W. C. Lai, “Immersed finger-type indium tin oxide ohmic contacts on p-GaN photoelectrodes for photoelectrochemical hydrogen generation,” Opt. Express 20(S2Suppl 2), A190–A196 (2012).
[Crossref] [PubMed]

S. Y. Liu, Y. C. Lin, J. C. Ye, S. J. Tu, F. W. Huang, M. L. Lee, W. C. Lai, and J. K. Sheu, “Hydrogen gas generation using n-GaN photoelectrodes with immersed Indium Tin Oxide ohmic contacts,” Opt. Express 19(S6Suppl 6), A1196–A1201 (2011).
[Crossref] [PubMed]

I. Waki, D. Cohen, R. Lal, U. Mishra, S. P. DenBaars, and S. Nakamura, “Direct water photoelectrolysis with patterned n-GaN,” Appl. Phys. Lett. 91(9), 093519 (2007).
[Crossref]

S. Y. Liu, J. K. Sheu, M. L. Lee, Y. C. Lin, S. J. Tu, F. W. Huang, and W. C. Lai, “Immersed finger-type indium tin oxide ohmic contacts on p-GaN photoelectrodes for photoelectrochemical hydrogen generation,” Opt. Express 20(S2Suppl 2), A190–A196 (2012).
[Crossref] [PubMed]

S. Y. Liu, Y. C. Lin, J. C. Ye, S. J. Tu, F. W. Huang, M. L. Lee, W. C. Lai, and J. K. Sheu, “Hydrogen gas generation using n-GaN photoelectrodes with immersed Indium Tin Oxide ohmic contacts,” Opt. Express 19(S6Suppl 6), A1196–A1201 (2011).
[Crossref] [PubMed]

M. L. Lee, J. K. Sheu, and C. C. Hu, “Non-alloyed Cr/Au Ohmic contacts to n-GaN,” Appl. Phys. Lett. 91(18), 182106 (2007).
[Crossref]

W. J. Youngblood, S. H. A. Lee, Y. Kobayashi, E. A. Hernandez-Pagan, P. G. Hoertz, T. A. Moore, A. L. Moore, D. Gust, and T. E. Mallouk, “Photoassisted overall water splitting in a visible light-absorbing dye-sensitized photoelectrochemical cell,” J. Am. Chem. Soc. 131(3), 926–927 (2009).
[Crossref] [PubMed]

K. Aryal, B. N. Pantha, J. Li, J. Y. Lin, and H. X. Jiang, “Hydrogen generation by solar water splitting using p-InGaN photoelectrochemical cells,” Appl. Phys. Lett. 96(5), 052110 (2010).
[Crossref]

J. Li, J. Y. Lin, and H. X. Jiang, “Direct hydrogen gas generation by using InGaN epilayers as working electrodes,” Appl. Phys. Lett. 93(16), 162107 (2008).
[Crossref]

M. Li, W. Luo, B. Liu, X. Zhao, Z. Li, D. Chen, T. Yu, Z. Xie, R. Zhang, and Z. Zou, “Remarkable enhancement in photocurrent of In0.20Ga0.80N photoanode by using an electrochemical surface treatment,” Appl. Phys. Lett. 99(11), 112108 (2011).
[Crossref]

M. Li, W. Luo, B. Liu, X. Zhao, Z. Li, D. Chen, T. Yu, Z. Xie, R. Zhang, and Z. Zou, “Remarkable enhancement in photocurrent of In0.20Ga0.80N photoanode by using an electrochemical surface treatment,” Appl. Phys. Lett. 99(11), 112108 (2011).
[Crossref]

Z. Yi, J. Ye, N. Kikugawa, T. Kako, S. Ouyang, H. Stuart-Williams, H. Yang, J. Cao, W. Luo, Z. Li, Y. Liu, and R. L. Withers, “An orthophosphate semiconductor with photooxidation properties under visible-light irradiation,” Nat. Mater. 9(7), 559–564 (2010).
[Crossref] [PubMed]

W. Luo, B. Liu, Z. Li, Z. Xie, D. Chen, Z. Zou, and R. Zhang, “Stable response to visible light of InGaN photoelectrodes,” Appl. Phys. Lett. 92(26), 262110 (2008).
[Crossref]

K. Aryal, B. N. Pantha, J. Li, J. Y. Lin, and H. X. Jiang, “Hydrogen generation by solar water splitting using p-InGaN photoelectrochemical cells,” Appl. Phys. Lett. 96(5), 052110 (2010).
[Crossref]

J. Li, J. Y. Lin, and H. X. Jiang, “Direct hydrogen gas generation by using InGaN epilayers as working electrodes,” Appl. Phys. Lett. 93(16), 162107 (2008).
[Crossref]

S. Y. Liu, J. K. Sheu, M. L. Lee, Y. C. Lin, S. J. Tu, F. W. Huang, and W. C. Lai, “Immersed finger-type indium tin oxide ohmic contacts on p-GaN photoelectrodes for photoelectrochemical hydrogen generation,” Opt. Express 20(S2Suppl 2), A190–A196 (2012).
[Crossref] [PubMed]

S. Y. Liu, Y. C. Lin, J. C. Ye, S. J. Tu, F. W. Huang, M. L. Lee, W. C. Lai, and J. K. Sheu, “Hydrogen gas generation using n-GaN photoelectrodes with immersed Indium Tin Oxide ohmic contacts,” Opt. Express 19(S6Suppl 6), A1196–A1201 (2011).
[Crossref] [PubMed]

M. Li, W. Luo, B. Liu, X. Zhao, Z. Li, D. Chen, T. Yu, Z. Xie, R. Zhang, and Z. Zou, “Remarkable enhancement in photocurrent of In0.20Ga0.80N photoanode by using an electrochemical surface treatment,” Appl. Phys. Lett. 99(11), 112108 (2011).
[Crossref]

W. Luo, B. Liu, Z. Li, Z. Xie, D. Chen, Z. Zou, and R. Zhang, “Stable response to visible light of InGaN photoelectrodes,” Appl. Phys. Lett. 92(26), 262110 (2008).
[Crossref]

J. K. Sheu, Y. K. Su, G. C. Chi, M. J. Jou, C. M. Chang, and C. C. Liu, “The indium tin oxide Ohmic contact to highly doped n-GaN,” Solid-State Electron. 43(11), 2081–2084 (1999).
[Crossref]

S. Y. Liu, J. K. Sheu, M. L. Lee, Y. C. Lin, S. J. Tu, F. W. Huang, and W. C. Lai, “Immersed finger-type indium tin oxide ohmic contacts on p-GaN photoelectrodes for photoelectrochemical hydrogen generation,” Opt. Express 20(S2Suppl 2), A190–A196 (2012).
[Crossref] [PubMed]

S. Y. Liu, Y. C. Lin, J. C. Ye, S. J. Tu, F. W. Huang, M. L. Lee, W. C. Lai, and J. K. Sheu, “Hydrogen gas generation using n-GaN photoelectrodes with immersed Indium Tin Oxide ohmic contacts,” Opt. Express 19(S6Suppl 6), A1196–A1201 (2011).
[Crossref] [PubMed]

Z. Yi, J. Ye, N. Kikugawa, T. Kako, S. Ouyang, H. Stuart-Williams, H. Yang, J. Cao, W. Luo, Z. Li, Y. Liu, and R. L. Withers, “An orthophosphate semiconductor with photooxidation properties under visible-light irradiation,” Nat. Mater. 9(7), 559–564 (2010).
[Crossref] [PubMed]

J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, and W. J. Schaff, “Small band gap bowing in In1−xGaxN alloys,” Appl. Phys. Lett. 80(25), 4741 (2002).
[Crossref]

M. Li, W. Luo, B. Liu, X. Zhao, Z. Li, D. Chen, T. Yu, Z. Xie, R. Zhang, and Z. Zou, “Remarkable enhancement in photocurrent of In0.20Ga0.80N photoanode by using an electrochemical surface treatment,” Appl. Phys. Lett. 99(11), 112108 (2011).
[Crossref]

Z. Yi, J. Ye, N. Kikugawa, T. Kako, S. Ouyang, H. Stuart-Williams, H. Yang, J. Cao, W. Luo, Z. Li, Y. Liu, and R. L. Withers, “An orthophosphate semiconductor with photooxidation properties under visible-light irradiation,” Nat. Mater. 9(7), 559–564 (2010).
[Crossref] [PubMed]

W. Luo, B. Liu, Z. Li, Z. Xie, D. Chen, Z. Zou, and R. Zhang, “Stable response to visible light of InGaN photoelectrodes,” Appl. Phys. Lett. 92(26), 262110 (2008).
[Crossref]

W. J. Youngblood, S. H. A. Lee, Y. Kobayashi, E. A. Hernandez-Pagan, P. G. Hoertz, T. A. Moore, A. L. Moore, D. Gust, and T. E. Mallouk, “Photoassisted overall water splitting in a visible light-absorbing dye-sensitized photoelectrochemical cell,” J. Am. Chem. Soc. 131(3), 926–927 (2009).
[Crossref] [PubMed]

I. Waki, D. Cohen, R. Lal, U. Mishra, S. P. DenBaars, and S. Nakamura, “Direct water photoelectrolysis with patterned n-GaN,” Appl. Phys. Lett. 91(9), 093519 (2007).
[Crossref]

W. J. Youngblood, S. H. A. Lee, Y. Kobayashi, E. A. Hernandez-Pagan, P. G. Hoertz, T. A. Moore, A. L. Moore, D. Gust, and T. E. Mallouk, “Photoassisted overall water splitting in a visible light-absorbing dye-sensitized photoelectrochemical cell,” J. Am. Chem. Soc. 131(3), 926–927 (2009).
[Crossref] [PubMed]

W. J. Youngblood, S. H. A. Lee, Y. Kobayashi, E. A. Hernandez-Pagan, P. G. Hoertz, T. A. Moore, A. L. Moore, D. Gust, and T. E. Mallouk, “Photoassisted overall water splitting in a visible light-absorbing dye-sensitized photoelectrochemical cell,” J. Am. Chem. Soc. 131(3), 926–927 (2009).
[Crossref] [PubMed]

I. Waki, D. Cohen, R. Lal, U. Mishra, S. P. DenBaars, and S. Nakamura, “Direct water photoelectrolysis with patterned n-GaN,” Appl. Phys. Lett. 91(9), 093519 (2007).
[Crossref]

K. Fujii, M. Ono, T. Ito, Y. Iwaki, A. Hirako, and K. Ohkawa, “Band-edge energies and photoelectrochemical properties of n-Type AlxGa1−xN and InyGa1−yN alloys,” J. Electrochem. Soc. 154(2), B175–B179 (2007).
[Crossref]

K. Fujii, M. Ono, T. Ito, Y. Iwaki, A. Hirako, and K. Ohkawa, “Band-edge energies and photoelectrochemical properties of n-Type AlxGa1−xN and InyGa1−yN alloys,” J. Electrochem. Soc. 154(2), B175–B179 (2007).
[Crossref]

Z. Yi, J. Ye, N. Kikugawa, T. Kako, S. Ouyang, H. Stuart-Williams, H. Yang, J. Cao, W. Luo, Z. Li, Y. Liu, and R. L. Withers, “An orthophosphate semiconductor with photooxidation properties under visible-light irradiation,” Nat. Mater. 9(7), 559–564 (2010).
[Crossref] [PubMed]

K. Aryal, B. N. Pantha, J. Li, J. Y. Lin, and H. X. Jiang, “Hydrogen generation by solar water splitting using p-InGaN photoelectrochemical cells,” Appl. Phys. Lett. 96(5), 052110 (2010).
[Crossref]

J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, and W. J. Schaff, “Small band gap bowing in In1−xGaxN alloys,” Appl. Phys. Lett. 80(25), 4741 (2002).
[Crossref]

A. Siegel and T. Schott, “Optimization of photovoltaic hydrogen production,” Int. J. Hydrogen Energy 13(11), 659–675 (1988).
[Crossref]

S. Y. Liu, J. K. Sheu, M. L. Lee, Y. C. Lin, S. J. Tu, F. W. Huang, and W. C. Lai, “Immersed finger-type indium tin oxide ohmic contacts on p-GaN photoelectrodes for photoelectrochemical hydrogen generation,” Opt. Express 20(S2Suppl 2), A190–A196 (2012).
[Crossref] [PubMed]

S. Y. Liu, Y. C. Lin, J. C. Ye, S. J. Tu, F. W. Huang, M. L. Lee, W. C. Lai, and J. K. Sheu, “Hydrogen gas generation using n-GaN photoelectrodes with immersed Indium Tin Oxide ohmic contacts,” Opt. Express 19(S6Suppl 6), A1196–A1201 (2011).
[Crossref] [PubMed]

M. L. Lee, J. K. Sheu, and C. C. Hu, “Non-alloyed Cr/Au Ohmic contacts to n-GaN,” Appl. Phys. Lett. 91(18), 182106 (2007).
[Crossref]

J. K. Sheu, Y. K. Su, G. C. Chi, M. J. Jou, C. M. Chang, and C. C. Liu, “The indium tin oxide Ohmic contact to highly doped n-GaN,” Solid-State Electron. 43(11), 2081–2084 (1999).
[Crossref]

A. Siegel and T. Schott, “Optimization of photovoltaic hydrogen production,” Int. J. Hydrogen Energy 13(11), 659–675 (1988).
[Crossref]

Z. Yi, J. Ye, N. Kikugawa, T. Kako, S. Ouyang, H. Stuart-Williams, H. Yang, J. Cao, W. Luo, Z. Li, Y. Liu, and R. L. Withers, “An orthophosphate semiconductor with photooxidation properties under visible-light irradiation,” Nat. Mater. 9(7), 559–564 (2010).
[Crossref] [PubMed]

J. K. Sheu, Y. K. Su, G. C. Chi, M. J. Jou, C. M. Chang, and C. C. Liu, “The indium tin oxide Ohmic contact to highly doped n-GaN,” Solid-State Electron. 43(11), 2081–2084 (1999).
[Crossref]

S. Y. Liu, J. K. Sheu, M. L. Lee, Y. C. Lin, S. J. Tu, F. W. Huang, and W. C. Lai, “Immersed finger-type indium tin oxide ohmic contacts on p-GaN photoelectrodes for photoelectrochemical hydrogen generation,” Opt. Express 20(S2Suppl 2), A190–A196 (2012).
[Crossref] [PubMed]

S. Y. Liu, Y. C. Lin, J. C. Ye, S. J. Tu, F. W. Huang, M. L. Lee, W. C. Lai, and J. K. Sheu, “Hydrogen gas generation using n-GaN photoelectrodes with immersed Indium Tin Oxide ohmic contacts,” Opt. Express 19(S6Suppl 6), A1196–A1201 (2011).
[Crossref] [PubMed]

O. Khaselev and J. A. Turner, “A monolithic photovoltaic-photoelectrochemical device for hydrogen production via water splitting,” Science 280(5362), 425–427 (1998).
[Crossref] [PubMed]

I. Waki, D. Cohen, R. Lal, U. Mishra, S. P. DenBaars, and S. Nakamura, “Direct water photoelectrolysis with patterned n-GaN,” Appl. Phys. Lett. 91(9), 093519 (2007).
[Crossref]

J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, and W. J. Schaff, “Small band gap bowing in In1−xGaxN alloys,” Appl. Phys. Lett. 80(25), 4741 (2002).
[Crossref]

Z. Yi, J. Ye, N. Kikugawa, T. Kako, S. Ouyang, H. Stuart-Williams, H. Yang, J. Cao, W. Luo, Z. Li, Y. Liu, and R. L. Withers, “An orthophosphate semiconductor with photooxidation properties under visible-light irradiation,” Nat. Mater. 9(7), 559–564 (2010).
[Crossref] [PubMed]

J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, and W. J. Schaff, “Small band gap bowing in In1−xGaxN alloys,” Appl. Phys. Lett. 80(25), 4741 (2002).
[Crossref]

M. Li, W. Luo, B. Liu, X. Zhao, Z. Li, D. Chen, T. Yu, Z. Xie, R. Zhang, and Z. Zou, “Remarkable enhancement in photocurrent of In0.20Ga0.80N photoanode by using an electrochemical surface treatment,” Appl. Phys. Lett. 99(11), 112108 (2011).
[Crossref]

W. Luo, B. Liu, Z. Li, Z. Xie, D. Chen, Z. Zou, and R. Zhang, “Stable response to visible light of InGaN photoelectrodes,” Appl. Phys. Lett. 92(26), 262110 (2008).
[Crossref]

Z. Yi, J. Ye, N. Kikugawa, T. Kako, S. Ouyang, H. Stuart-Williams, H. Yang, J. Cao, W. Luo, Z. Li, Y. Liu, and R. L. Withers, “An orthophosphate semiconductor with photooxidation properties under visible-light irradiation,” Nat. Mater. 9(7), 559–564 (2010).
[Crossref] [PubMed]

Z. Yi, J. Ye, N. Kikugawa, T. Kako, S. Ouyang, H. Stuart-Williams, H. Yang, J. Cao, W. Luo, Z. Li, Y. Liu, and R. L. Withers, “An orthophosphate semiconductor with photooxidation properties under visible-light irradiation,” Nat. Mater. 9(7), 559–564 (2010).
[Crossref] [PubMed]

S. Y. Liu, Y. C. Lin, J. C. Ye, S. J. Tu, F. W. Huang, M. L. Lee, W. C. Lai, and J. K. Sheu, “Hydrogen gas generation using n-GaN photoelectrodes with immersed Indium Tin Oxide ohmic contacts,” Opt. Express 19(S6Suppl 6), A1196–A1201 (2011).
[Crossref] [PubMed]

Z. Yi, J. Ye, N. Kikugawa, T. Kako, S. Ouyang, H. Stuart-Williams, H. Yang, J. Cao, W. Luo, Z. Li, Y. Liu, and R. L. Withers, “An orthophosphate semiconductor with photooxidation properties under visible-light irradiation,” Nat. Mater. 9(7), 559–564 (2010).
[Crossref] [PubMed]

W. J. Youngblood, S. H. A. Lee, Y. Kobayashi, E. A. Hernandez-Pagan, P. G. Hoertz, T. A. Moore, A. L. Moore, D. Gust, and T. E. Mallouk, “Photoassisted overall water splitting in a visible light-absorbing dye-sensitized photoelectrochemical cell,” J. Am. Chem. Soc. 131(3), 926–927 (2009).
[Crossref] [PubMed]

J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, and W. J. Schaff, “Small band gap bowing in In1−xGaxN alloys,” Appl. Phys. Lett. 80(25), 4741 (2002).
[Crossref]

M. Li, W. Luo, B. Liu, X. Zhao, Z. Li, D. Chen, T. Yu, Z. Xie, R. Zhang, and Z. Zou, “Remarkable enhancement in photocurrent of In0.20Ga0.80N photoanode by using an electrochemical surface treatment,” Appl. Phys. Lett. 99(11), 112108 (2011).
[Crossref]

M. Li, W. Luo, B. Liu, X. Zhao, Z. Li, D. Chen, T. Yu, Z. Xie, R. Zhang, and Z. Zou, “Remarkable enhancement in photocurrent of In0.20Ga0.80N photoanode by using an electrochemical surface treatment,” Appl. Phys. Lett. 99(11), 112108 (2011).
[Crossref]

W. Luo, B. Liu, Z. Li, Z. Xie, D. Chen, Z. Zou, and R. Zhang, “Stable response to visible light of InGaN photoelectrodes,” Appl. Phys. Lett. 92(26), 262110 (2008).
[Crossref]

M. Li, W. Luo, B. Liu, X. Zhao, Z. Li, D. Chen, T. Yu, Z. Xie, R. Zhang, and Z. Zou, “Remarkable enhancement in photocurrent of In0.20Ga0.80N photoanode by using an electrochemical surface treatment,” Appl. Phys. Lett. 99(11), 112108 (2011).
[Crossref]

M. Li, W. Luo, B. Liu, X. Zhao, Z. Li, D. Chen, T. Yu, Z. Xie, R. Zhang, and Z. Zou, “Remarkable enhancement in photocurrent of In0.20Ga0.80N photoanode by using an electrochemical surface treatment,” Appl. Phys. Lett. 99(11), 112108 (2011).
[Crossref]

W. Luo, B. Liu, Z. Li, Z. Xie, D. Chen, Z. Zou, and R. Zhang, “Stable response to visible light of InGaN photoelectrodes,” Appl. Phys. Lett. 92(26), 262110 (2008).
[Crossref]

I. Waki, D. Cohen, R. Lal, U. Mishra, S. P. DenBaars, and S. Nakamura, “Direct water photoelectrolysis with patterned n-GaN,” Appl. Phys. Lett. 91(9), 093519 (2007).
[Crossref]

J. Li, J. Y. Lin, and H. X. Jiang, “Direct hydrogen gas generation by using InGaN epilayers as working electrodes,” Appl. Phys. Lett. 93(16), 162107 (2008).
[Crossref]

J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, and W. J. Schaff, “Small band gap bowing in In1−xGaxN alloys,” Appl. Phys. Lett. 80(25), 4741 (2002).
[Crossref]

W. Luo, B. Liu, Z. Li, Z. Xie, D. Chen, Z. Zou, and R. Zhang, “Stable response to visible light of InGaN photoelectrodes,” Appl. Phys. Lett. 92(26), 262110 (2008).
[Crossref]

K. Aryal, B. N. Pantha, J. Li, J. Y. Lin, and H. X. Jiang, “Hydrogen generation by solar water splitting using p-InGaN photoelectrochemical cells,” Appl. Phys. Lett. 96(5), 052110 (2010).
[Crossref]

M. Li, W. Luo, B. Liu, X. Zhao, Z. Li, D. Chen, T. Yu, Z. Xie, R. Zhang, and Z. Zou, “Remarkable enhancement in photocurrent of In0.20Ga0.80N photoanode by using an electrochemical surface treatment,” Appl. Phys. Lett. 99(11), 112108 (2011).
[Crossref]

M. L. Lee, J. K. Sheu, and C. C. Hu, “Non-alloyed Cr/Au Ohmic contacts to n-GaN,” Appl. Phys. Lett. 91(18), 182106 (2007).
[Crossref]

A. Currao, “Photoelectrochemical water splitting,” Chimia (Aarau) 61(12), 815–819 (2007).
[Crossref]

A. Siegel and T. Schott, “Optimization of photovoltaic hydrogen production,” Int. J. Hydrogen Energy 13(11), 659–675 (1988).
[Crossref]

W. J. Youngblood, S. H. A. Lee, Y. Kobayashi, E. A. Hernandez-Pagan, P. G. Hoertz, T. A. Moore, A. L. Moore, D. Gust, and T. E. Mallouk, “Photoassisted overall water splitting in a visible light-absorbing dye-sensitized photoelectrochemical cell,” J. Am. Chem. Soc. 131(3), 926–927 (2009).
[Crossref] [PubMed]

K. Fujii, M. Ono, T. Ito, Y. Iwaki, A. Hirako, and K. Ohkawa, “Band-edge energies and photoelectrochemical properties of n-Type AlxGa1−xN and InyGa1−yN alloys,” J. Electrochem. Soc. 154(2), B175–B179 (2007).
[Crossref]

Z. Yi, J. Ye, N. Kikugawa, T. Kako, S. Ouyang, H. Stuart-Williams, H. Yang, J. Cao, W. Luo, Z. Li, Y. Liu, and R. L. Withers, “An orthophosphate semiconductor with photooxidation properties under visible-light irradiation,” Nat. Mater. 9(7), 559–564 (2010).
[Crossref] [PubMed]

A. Fujishima and K. Honda, “Electrochemical photolysis of water at a semiconductor electrode,” Nature 238(5358), 37–38 (1972).
[Crossref] [PubMed]

S. Y. Liu, Y. C. Lin, J. C. Ye, S. J. Tu, F. W. Huang, M. L. Lee, W. C. Lai, and J. K. Sheu, “Hydrogen gas generation using n-GaN photoelectrodes with immersed Indium Tin Oxide ohmic contacts,” Opt. Express 19(S6Suppl 6), A1196–A1201 (2011).
[Crossref] [PubMed]

S. Y. Liu, J. K. Sheu, M. L. Lee, Y. C. Lin, S. J. Tu, F. W. Huang, and W. C. Lai, “Immersed finger-type indium tin oxide ohmic contacts on p-GaN photoelectrodes for photoelectrochemical hydrogen generation,” Opt. Express 20(S2Suppl 2), A190–A196 (2012).
[Crossref] [PubMed]

O. Khaselev and J. A. Turner, “A monolithic photovoltaic-photoelectrochemical device for hydrogen production via water splitting,” Science 280(5362), 425–427 (1998).
[Crossref] [PubMed]

J. K. Sheu, Y. K. Su, G. C. Chi, M. J. Jou, C. M. Chang, and C. C. Liu, “The indium tin oxide Ohmic contact to highly doped n-GaN,” Solid-State Electron. 43(11), 2081–2084 (1999).
[Crossref]