Abstract

A wing-type imbedded electrodes was introduced into the lateral light emitting diode configuration (WTIE-LEDs) to reduce the effect of light shading of electrode in conventional sapphire-based LEDs (CSB-LEDs). The WTIE-LEDs with double-side roughened surface structures not only can eliminate the light shading of electrode and bonding wire, but also increase the light extraction and light output power. Contrast to CSB-LEDs, a 79% enhancement of output intensity in the WTIE-LED was obtained at 100 mA injection current. Similarly, the output power of packaged WTIE-LEDs was enhanced 59% higher compared with the packaged CSB-LEDs at the same injection condition. Therefore, using the imbedded contact to reduce light shading would be a promising prospective for LEDs to achieve high output power.

© 2012 OSA

Full Article  |  PDF Article

References

  • View by:
  • |
  • |
  • |

  1. R. H. Horng, S. H. Huang, C. Y. Hsieh, X. Zheng, D. S. Wuu, “Enhanced luminance efficiency of wafer-bonded InGaN-GaN LEDs with double-side textured surfaces and omnidirectional reflectors,” IEEE J. Quantum Electron. 44(11), 1116–1123 (2008).
    [CrossRef]
  2. W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, N. M. Johnson, “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off,” Appl. Phys. Lett. 75(10), 1360–1362 (1999).
    [CrossRef]
  3. Z. S. Luo, Y. Cho, V. Loryuenyong, T. Sands, N. W. Cheung, M. C. Yoo, “Enhancement of (In, Ga)N light-emitting diode performance by laser liftoff and transfer from sapphire to silicon,” IEEE Photon. Technol. Lett. 14(10), 1400–1402 (2002).
    [CrossRef]
  4. M. K. Kelly, O. Ambacher, B. Dahlheimer, G. Groos, R. Dimitrov, H. Angerer, M. Stutzmann, “Laser processing for patterned and freestanding nitride films,” Appl. Phys. Lett. 69(12), 1749–1751 (1996).
    [CrossRef]
  5. C. F. Chu, F. I. Lai, J. T. Chu, C. C. Yu, C. F. Lin, H. C. Kuo, S. C. Wang, “Study of GaN light-emitting diodes fabricated by laser lift-off technique,” J. Appl. Phys. 95(8), 3916–3922 (2004).
    [CrossRef]
  6. W. S. Wong, T. Sands, N. W. Cheung, “Damage-free separation of GaN thin films from sapphire substrates,” Appl. Phys. Lett. 72(5), 599–601 (1998).
    [CrossRef]
  7. S. H. Huang, R. H. Horng, S. L. Li, K. W. Yen, D. S. Wuu, C. K. Lin, H. Liu, “Thermally stable mirror structures for vertical-conducting GaN/mirror/Si light-emitting diodes,” IEEE Photon. Technol. Lett. 19(23), 1913–1915 (2007).
    [CrossRef]
  8. Y. S. Wu, J.-H. Cheng, W. C. Peng, H. Ouyang, “Effects of laser sources on the reverse-bias leakages of laser lift-off GaN-based lightemitting diodes,” Appl. Phys. Lett. 90(25), 251110 (2007).
    [CrossRef]
  9. O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006).
    [CrossRef]
  10. R. H. Horng, Y. A. Lu, D. S. Wuu, “Light Extraction Investigation for Thin-Film GaN Light-Emitting Diodes with Imbedded Electrodes,” IEEE Photon. Technol. Lett. 23(1), 54–56 (2011).
    [CrossRef]
  11. S. Kim, J.-H. Jang, J.-S. Lee, D. J. Duquette, “Stress behavior of electrodeposited copper films as mechanical supporters for light emitting diodes,” Electrochim. Acta 52(16), 5258–5265 (2007).
    [CrossRef]
  12. T. Chen, Y. Wang, P. Xiang, R. Luo, M. Liu, W. Yang, Y. Ren, Z. He, Y. Yang, W. Chen, X. Zhang, Z. Wu, Y. Liu, B. Zhang, “Crack-free InGaN multiple quantum wells light-emitting diodes structures transferred from Si (111) substrate onto electroplating copper submount with embedded electrodes,” Appl. Phys. Lett. 100(24), 241112 (2012).
    [CrossRef]

2012

T. Chen, Y. Wang, P. Xiang, R. Luo, M. Liu, W. Yang, Y. Ren, Z. He, Y. Yang, W. Chen, X. Zhang, Z. Wu, Y. Liu, B. Zhang, “Crack-free InGaN multiple quantum wells light-emitting diodes structures transferred from Si (111) substrate onto electroplating copper submount with embedded electrodes,” Appl. Phys. Lett. 100(24), 241112 (2012).
[CrossRef]

2011

R. H. Horng, Y. A. Lu, D. S. Wuu, “Light Extraction Investigation for Thin-Film GaN Light-Emitting Diodes with Imbedded Electrodes,” IEEE Photon. Technol. Lett. 23(1), 54–56 (2011).
[CrossRef]

2008

R. H. Horng, S. H. Huang, C. Y. Hsieh, X. Zheng, D. S. Wuu, “Enhanced luminance efficiency of wafer-bonded InGaN-GaN LEDs with double-side textured surfaces and omnidirectional reflectors,” IEEE J. Quantum Electron. 44(11), 1116–1123 (2008).
[CrossRef]

2007

S. H. Huang, R. H. Horng, S. L. Li, K. W. Yen, D. S. Wuu, C. K. Lin, H. Liu, “Thermally stable mirror structures for vertical-conducting GaN/mirror/Si light-emitting diodes,” IEEE Photon. Technol. Lett. 19(23), 1913–1915 (2007).
[CrossRef]

Y. S. Wu, J.-H. Cheng, W. C. Peng, H. Ouyang, “Effects of laser sources on the reverse-bias leakages of laser lift-off GaN-based lightemitting diodes,” Appl. Phys. Lett. 90(25), 251110 (2007).
[CrossRef]

S. Kim, J.-H. Jang, J.-S. Lee, D. J. Duquette, “Stress behavior of electrodeposited copper films as mechanical supporters for light emitting diodes,” Electrochim. Acta 52(16), 5258–5265 (2007).
[CrossRef]

2006

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006).
[CrossRef]

2004

C. F. Chu, F. I. Lai, J. T. Chu, C. C. Yu, C. F. Lin, H. C. Kuo, S. C. Wang, “Study of GaN light-emitting diodes fabricated by laser lift-off technique,” J. Appl. Phys. 95(8), 3916–3922 (2004).
[CrossRef]

2002

Z. S. Luo, Y. Cho, V. Loryuenyong, T. Sands, N. W. Cheung, M. C. Yoo, “Enhancement of (In, Ga)N light-emitting diode performance by laser liftoff and transfer from sapphire to silicon,” IEEE Photon. Technol. Lett. 14(10), 1400–1402 (2002).
[CrossRef]

1999

W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, N. M. Johnson, “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off,” Appl. Phys. Lett. 75(10), 1360–1362 (1999).
[CrossRef]

1998

W. S. Wong, T. Sands, N. W. Cheung, “Damage-free separation of GaN thin films from sapphire substrates,” Appl. Phys. Lett. 72(5), 599–601 (1998).
[CrossRef]

1996

M. K. Kelly, O. Ambacher, B. Dahlheimer, G. Groos, R. Dimitrov, H. Angerer, M. Stutzmann, “Laser processing for patterned and freestanding nitride films,” Appl. Phys. Lett. 69(12), 1749–1751 (1996).
[CrossRef]

Ambacher, O.

M. K. Kelly, O. Ambacher, B. Dahlheimer, G. Groos, R. Dimitrov, H. Angerer, M. Stutzmann, “Laser processing for patterned and freestanding nitride films,” Appl. Phys. Lett. 69(12), 1749–1751 (1996).
[CrossRef]

Angerer, H.

M. K. Kelly, O. Ambacher, B. Dahlheimer, G. Groos, R. Dimitrov, H. Angerer, M. Stutzmann, “Laser processing for patterned and freestanding nitride films,” Appl. Phys. Lett. 69(12), 1749–1751 (1996).
[CrossRef]

Bour, D. P.

W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, N. M. Johnson, “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off,” Appl. Phys. Lett. 75(10), 1360–1362 (1999).
[CrossRef]

Chen, T.

T. Chen, Y. Wang, P. Xiang, R. Luo, M. Liu, W. Yang, Y. Ren, Z. He, Y. Yang, W. Chen, X. Zhang, Z. Wu, Y. Liu, B. Zhang, “Crack-free InGaN multiple quantum wells light-emitting diodes structures transferred from Si (111) substrate onto electroplating copper submount with embedded electrodes,” Appl. Phys. Lett. 100(24), 241112 (2012).
[CrossRef]

Chen, W.

T. Chen, Y. Wang, P. Xiang, R. Luo, M. Liu, W. Yang, Y. Ren, Z. He, Y. Yang, W. Chen, X. Zhang, Z. Wu, Y. Liu, B. Zhang, “Crack-free InGaN multiple quantum wells light-emitting diodes structures transferred from Si (111) substrate onto electroplating copper submount with embedded electrodes,” Appl. Phys. Lett. 100(24), 241112 (2012).
[CrossRef]

Cheng, J.-H.

Y. S. Wu, J.-H. Cheng, W. C. Peng, H. Ouyang, “Effects of laser sources on the reverse-bias leakages of laser lift-off GaN-based lightemitting diodes,” Appl. Phys. Lett. 90(25), 251110 (2007).
[CrossRef]

Cheung, N. W.

Z. S. Luo, Y. Cho, V. Loryuenyong, T. Sands, N. W. Cheung, M. C. Yoo, “Enhancement of (In, Ga)N light-emitting diode performance by laser liftoff and transfer from sapphire to silicon,” IEEE Photon. Technol. Lett. 14(10), 1400–1402 (2002).
[CrossRef]

W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, N. M. Johnson, “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off,” Appl. Phys. Lett. 75(10), 1360–1362 (1999).
[CrossRef]

W. S. Wong, T. Sands, N. W. Cheung, “Damage-free separation of GaN thin films from sapphire substrates,” Appl. Phys. Lett. 72(5), 599–601 (1998).
[CrossRef]

Cho, Y.

Z. S. Luo, Y. Cho, V. Loryuenyong, T. Sands, N. W. Cheung, M. C. Yoo, “Enhancement of (In, Ga)N light-emitting diode performance by laser liftoff and transfer from sapphire to silicon,” IEEE Photon. Technol. Lett. 14(10), 1400–1402 (2002).
[CrossRef]

Chu, C. F.

C. F. Chu, F. I. Lai, J. T. Chu, C. C. Yu, C. F. Lin, H. C. Kuo, S. C. Wang, “Study of GaN light-emitting diodes fabricated by laser lift-off technique,” J. Appl. Phys. 95(8), 3916–3922 (2004).
[CrossRef]

Chu, J. T.

C. F. Chu, F. I. Lai, J. T. Chu, C. C. Yu, C. F. Lin, H. C. Kuo, S. C. Wang, “Study of GaN light-emitting diodes fabricated by laser lift-off technique,” J. Appl. Phys. 95(8), 3916–3922 (2004).
[CrossRef]

Dahlheimer, B.

M. K. Kelly, O. Ambacher, B. Dahlheimer, G. Groos, R. Dimitrov, H. Angerer, M. Stutzmann, “Laser processing for patterned and freestanding nitride films,” Appl. Phys. Lett. 69(12), 1749–1751 (1996).
[CrossRef]

Dimitrov, R.

M. K. Kelly, O. Ambacher, B. Dahlheimer, G. Groos, R. Dimitrov, H. Angerer, M. Stutzmann, “Laser processing for patterned and freestanding nitride films,” Appl. Phys. Lett. 69(12), 1749–1751 (1996).
[CrossRef]

Duquette, D. J.

S. Kim, J.-H. Jang, J.-S. Lee, D. J. Duquette, “Stress behavior of electrodeposited copper films as mechanical supporters for light emitting diodes,” Electrochim. Acta 52(16), 5258–5265 (2007).
[CrossRef]

Epler, J. E.

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006).
[CrossRef]

Groos, G.

M. K. Kelly, O. Ambacher, B. Dahlheimer, G. Groos, R. Dimitrov, H. Angerer, M. Stutzmann, “Laser processing for patterned and freestanding nitride films,” Appl. Phys. Lett. 69(12), 1749–1751 (1996).
[CrossRef]

He, Z.

T. Chen, Y. Wang, P. Xiang, R. Luo, M. Liu, W. Yang, Y. Ren, Z. He, Y. Yang, W. Chen, X. Zhang, Z. Wu, Y. Liu, B. Zhang, “Crack-free InGaN multiple quantum wells light-emitting diodes structures transferred from Si (111) substrate onto electroplating copper submount with embedded electrodes,” Appl. Phys. Lett. 100(24), 241112 (2012).
[CrossRef]

Holcomb, M. O.

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006).
[CrossRef]

Horng, R. H.

R. H. Horng, Y. A. Lu, D. S. Wuu, “Light Extraction Investigation for Thin-Film GaN Light-Emitting Diodes with Imbedded Electrodes,” IEEE Photon. Technol. Lett. 23(1), 54–56 (2011).
[CrossRef]

R. H. Horng, S. H. Huang, C. Y. Hsieh, X. Zheng, D. S. Wuu, “Enhanced luminance efficiency of wafer-bonded InGaN-GaN LEDs with double-side textured surfaces and omnidirectional reflectors,” IEEE J. Quantum Electron. 44(11), 1116–1123 (2008).
[CrossRef]

S. H. Huang, R. H. Horng, S. L. Li, K. W. Yen, D. S. Wuu, C. K. Lin, H. Liu, “Thermally stable mirror structures for vertical-conducting GaN/mirror/Si light-emitting diodes,” IEEE Photon. Technol. Lett. 19(23), 1913–1915 (2007).
[CrossRef]

Hsieh, C. Y.

R. H. Horng, S. H. Huang, C. Y. Hsieh, X. Zheng, D. S. Wuu, “Enhanced luminance efficiency of wafer-bonded InGaN-GaN LEDs with double-side textured surfaces and omnidirectional reflectors,” IEEE J. Quantum Electron. 44(11), 1116–1123 (2008).
[CrossRef]

Huang, S. H.

R. H. Horng, S. H. Huang, C. Y. Hsieh, X. Zheng, D. S. Wuu, “Enhanced luminance efficiency of wafer-bonded InGaN-GaN LEDs with double-side textured surfaces and omnidirectional reflectors,” IEEE J. Quantum Electron. 44(11), 1116–1123 (2008).
[CrossRef]

S. H. Huang, R. H. Horng, S. L. Li, K. W. Yen, D. S. Wuu, C. K. Lin, H. Liu, “Thermally stable mirror structures for vertical-conducting GaN/mirror/Si light-emitting diodes,” IEEE Photon. Technol. Lett. 19(23), 1913–1915 (2007).
[CrossRef]

Jang, J.-H.

S. Kim, J.-H. Jang, J.-S. Lee, D. J. Duquette, “Stress behavior of electrodeposited copper films as mechanical supporters for light emitting diodes,” Electrochim. Acta 52(16), 5258–5265 (2007).
[CrossRef]

Johnson, N. M.

W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, N. M. Johnson, “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off,” Appl. Phys. Lett. 75(10), 1360–1362 (1999).
[CrossRef]

Kelly, M. K.

M. K. Kelly, O. Ambacher, B. Dahlheimer, G. Groos, R. Dimitrov, H. Angerer, M. Stutzmann, “Laser processing for patterned and freestanding nitride films,” Appl. Phys. Lett. 69(12), 1749–1751 (1996).
[CrossRef]

Kim, S.

S. Kim, J.-H. Jang, J.-S. Lee, D. J. Duquette, “Stress behavior of electrodeposited copper films as mechanical supporters for light emitting diodes,” Electrochim. Acta 52(16), 5258–5265 (2007).
[CrossRef]

Kneissl, M.

W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, N. M. Johnson, “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off,” Appl. Phys. Lett. 75(10), 1360–1362 (1999).
[CrossRef]

Krames, M. R.

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006).
[CrossRef]

Kuo, H. C.

C. F. Chu, F. I. Lai, J. T. Chu, C. C. Yu, C. F. Lin, H. C. Kuo, S. C. Wang, “Study of GaN light-emitting diodes fabricated by laser lift-off technique,” J. Appl. Phys. 95(8), 3916–3922 (2004).
[CrossRef]

Lai, F. I.

C. F. Chu, F. I. Lai, J. T. Chu, C. C. Yu, C. F. Lin, H. C. Kuo, S. C. Wang, “Study of GaN light-emitting diodes fabricated by laser lift-off technique,” J. Appl. Phys. 95(8), 3916–3922 (2004).
[CrossRef]

Lee, J.-S.

S. Kim, J.-H. Jang, J.-S. Lee, D. J. Duquette, “Stress behavior of electrodeposited copper films as mechanical supporters for light emitting diodes,” Electrochim. Acta 52(16), 5258–5265 (2007).
[CrossRef]

Li, S. L.

S. H. Huang, R. H. Horng, S. L. Li, K. W. Yen, D. S. Wuu, C. K. Lin, H. Liu, “Thermally stable mirror structures for vertical-conducting GaN/mirror/Si light-emitting diodes,” IEEE Photon. Technol. Lett. 19(23), 1913–1915 (2007).
[CrossRef]

Lin, C. F.

C. F. Chu, F. I. Lai, J. T. Chu, C. C. Yu, C. F. Lin, H. C. Kuo, S. C. Wang, “Study of GaN light-emitting diodes fabricated by laser lift-off technique,” J. Appl. Phys. 95(8), 3916–3922 (2004).
[CrossRef]

Lin, C. K.

S. H. Huang, R. H. Horng, S. L. Li, K. W. Yen, D. S. Wuu, C. K. Lin, H. Liu, “Thermally stable mirror structures for vertical-conducting GaN/mirror/Si light-emitting diodes,” IEEE Photon. Technol. Lett. 19(23), 1913–1915 (2007).
[CrossRef]

Liu, H.

S. H. Huang, R. H. Horng, S. L. Li, K. W. Yen, D. S. Wuu, C. K. Lin, H. Liu, “Thermally stable mirror structures for vertical-conducting GaN/mirror/Si light-emitting diodes,” IEEE Photon. Technol. Lett. 19(23), 1913–1915 (2007).
[CrossRef]

Liu, M.

T. Chen, Y. Wang, P. Xiang, R. Luo, M. Liu, W. Yang, Y. Ren, Z. He, Y. Yang, W. Chen, X. Zhang, Z. Wu, Y. Liu, B. Zhang, “Crack-free InGaN multiple quantum wells light-emitting diodes structures transferred from Si (111) substrate onto electroplating copper submount with embedded electrodes,” Appl. Phys. Lett. 100(24), 241112 (2012).
[CrossRef]

Liu, Y.

T. Chen, Y. Wang, P. Xiang, R. Luo, M. Liu, W. Yang, Y. Ren, Z. He, Y. Yang, W. Chen, X. Zhang, Z. Wu, Y. Liu, B. Zhang, “Crack-free InGaN multiple quantum wells light-emitting diodes structures transferred from Si (111) substrate onto electroplating copper submount with embedded electrodes,” Appl. Phys. Lett. 100(24), 241112 (2012).
[CrossRef]

Loryuenyong, V.

Z. S. Luo, Y. Cho, V. Loryuenyong, T. Sands, N. W. Cheung, M. C. Yoo, “Enhancement of (In, Ga)N light-emitting diode performance by laser liftoff and transfer from sapphire to silicon,” IEEE Photon. Technol. Lett. 14(10), 1400–1402 (2002).
[CrossRef]

Lu, Y. A.

R. H. Horng, Y. A. Lu, D. S. Wuu, “Light Extraction Investigation for Thin-Film GaN Light-Emitting Diodes with Imbedded Electrodes,” IEEE Photon. Technol. Lett. 23(1), 54–56 (2011).
[CrossRef]

Luo, R.

T. Chen, Y. Wang, P. Xiang, R. Luo, M. Liu, W. Yang, Y. Ren, Z. He, Y. Yang, W. Chen, X. Zhang, Z. Wu, Y. Liu, B. Zhang, “Crack-free InGaN multiple quantum wells light-emitting diodes structures transferred from Si (111) substrate onto electroplating copper submount with embedded electrodes,” Appl. Phys. Lett. 100(24), 241112 (2012).
[CrossRef]

Luo, Z. S.

Z. S. Luo, Y. Cho, V. Loryuenyong, T. Sands, N. W. Cheung, M. C. Yoo, “Enhancement of (In, Ga)N light-emitting diode performance by laser liftoff and transfer from sapphire to silicon,” IEEE Photon. Technol. Lett. 14(10), 1400–1402 (2002).
[CrossRef]

Margalith, T.

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006).
[CrossRef]

Martin, P. S.

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006).
[CrossRef]

Mei, P.

W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, N. M. Johnson, “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off,” Appl. Phys. Lett. 75(10), 1360–1362 (1999).
[CrossRef]

Ouyang, H.

Y. S. Wu, J.-H. Cheng, W. C. Peng, H. Ouyang, “Effects of laser sources on the reverse-bias leakages of laser lift-off GaN-based lightemitting diodes,” Appl. Phys. Lett. 90(25), 251110 (2007).
[CrossRef]

Peng, W. C.

Y. S. Wu, J.-H. Cheng, W. C. Peng, H. Ouyang, “Effects of laser sources on the reverse-bias leakages of laser lift-off GaN-based lightemitting diodes,” Appl. Phys. Lett. 90(25), 251110 (2007).
[CrossRef]

Ren, Y.

T. Chen, Y. Wang, P. Xiang, R. Luo, M. Liu, W. Yang, Y. Ren, Z. He, Y. Yang, W. Chen, X. Zhang, Z. Wu, Y. Liu, B. Zhang, “Crack-free InGaN multiple quantum wells light-emitting diodes structures transferred from Si (111) substrate onto electroplating copper submount with embedded electrodes,” Appl. Phys. Lett. 100(24), 241112 (2012).
[CrossRef]

Romano, L. T.

W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, N. M. Johnson, “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off,” Appl. Phys. Lett. 75(10), 1360–1362 (1999).
[CrossRef]

Sands, T.

Z. S. Luo, Y. Cho, V. Loryuenyong, T. Sands, N. W. Cheung, M. C. Yoo, “Enhancement of (In, Ga)N light-emitting diode performance by laser liftoff and transfer from sapphire to silicon,” IEEE Photon. Technol. Lett. 14(10), 1400–1402 (2002).
[CrossRef]

W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, N. M. Johnson, “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off,” Appl. Phys. Lett. 75(10), 1360–1362 (1999).
[CrossRef]

W. S. Wong, T. Sands, N. W. Cheung, “Damage-free separation of GaN thin films from sapphire substrates,” Appl. Phys. Lett. 72(5), 599–601 (1998).
[CrossRef]

Shchekin, O. B.

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006).
[CrossRef]

Steigerwald, D. A.

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006).
[CrossRef]

Stutzmann, M.

M. K. Kelly, O. Ambacher, B. Dahlheimer, G. Groos, R. Dimitrov, H. Angerer, M. Stutzmann, “Laser processing for patterned and freestanding nitride films,” Appl. Phys. Lett. 69(12), 1749–1751 (1996).
[CrossRef]

Trottier, T. A.

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006).
[CrossRef]

Wang, S. C.

C. F. Chu, F. I. Lai, J. T. Chu, C. C. Yu, C. F. Lin, H. C. Kuo, S. C. Wang, “Study of GaN light-emitting diodes fabricated by laser lift-off technique,” J. Appl. Phys. 95(8), 3916–3922 (2004).
[CrossRef]

Wang, Y.

T. Chen, Y. Wang, P. Xiang, R. Luo, M. Liu, W. Yang, Y. Ren, Z. He, Y. Yang, W. Chen, X. Zhang, Z. Wu, Y. Liu, B. Zhang, “Crack-free InGaN multiple quantum wells light-emitting diodes structures transferred from Si (111) substrate onto electroplating copper submount with embedded electrodes,” Appl. Phys. Lett. 100(24), 241112 (2012).
[CrossRef]

Wong, W. S.

W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, N. M. Johnson, “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off,” Appl. Phys. Lett. 75(10), 1360–1362 (1999).
[CrossRef]

W. S. Wong, T. Sands, N. W. Cheung, “Damage-free separation of GaN thin films from sapphire substrates,” Appl. Phys. Lett. 72(5), 599–601 (1998).
[CrossRef]

Wu, Y. S.

Y. S. Wu, J.-H. Cheng, W. C. Peng, H. Ouyang, “Effects of laser sources on the reverse-bias leakages of laser lift-off GaN-based lightemitting diodes,” Appl. Phys. Lett. 90(25), 251110 (2007).
[CrossRef]

Wu, Z.

T. Chen, Y. Wang, P. Xiang, R. Luo, M. Liu, W. Yang, Y. Ren, Z. He, Y. Yang, W. Chen, X. Zhang, Z. Wu, Y. Liu, B. Zhang, “Crack-free InGaN multiple quantum wells light-emitting diodes structures transferred from Si (111) substrate onto electroplating copper submount with embedded electrodes,” Appl. Phys. Lett. 100(24), 241112 (2012).
[CrossRef]

Wuu, D. S.

R. H. Horng, Y. A. Lu, D. S. Wuu, “Light Extraction Investigation for Thin-Film GaN Light-Emitting Diodes with Imbedded Electrodes,” IEEE Photon. Technol. Lett. 23(1), 54–56 (2011).
[CrossRef]

R. H. Horng, S. H. Huang, C. Y. Hsieh, X. Zheng, D. S. Wuu, “Enhanced luminance efficiency of wafer-bonded InGaN-GaN LEDs with double-side textured surfaces and omnidirectional reflectors,” IEEE J. Quantum Electron. 44(11), 1116–1123 (2008).
[CrossRef]

S. H. Huang, R. H. Horng, S. L. Li, K. W. Yen, D. S. Wuu, C. K. Lin, H. Liu, “Thermally stable mirror structures for vertical-conducting GaN/mirror/Si light-emitting diodes,” IEEE Photon. Technol. Lett. 19(23), 1913–1915 (2007).
[CrossRef]

Xiang, P.

T. Chen, Y. Wang, P. Xiang, R. Luo, M. Liu, W. Yang, Y. Ren, Z. He, Y. Yang, W. Chen, X. Zhang, Z. Wu, Y. Liu, B. Zhang, “Crack-free InGaN multiple quantum wells light-emitting diodes structures transferred from Si (111) substrate onto electroplating copper submount with embedded electrodes,” Appl. Phys. Lett. 100(24), 241112 (2012).
[CrossRef]

Yang, W.

T. Chen, Y. Wang, P. Xiang, R. Luo, M. Liu, W. Yang, Y. Ren, Z. He, Y. Yang, W. Chen, X. Zhang, Z. Wu, Y. Liu, B. Zhang, “Crack-free InGaN multiple quantum wells light-emitting diodes structures transferred from Si (111) substrate onto electroplating copper submount with embedded electrodes,” Appl. Phys. Lett. 100(24), 241112 (2012).
[CrossRef]

Yang, Y.

T. Chen, Y. Wang, P. Xiang, R. Luo, M. Liu, W. Yang, Y. Ren, Z. He, Y. Yang, W. Chen, X. Zhang, Z. Wu, Y. Liu, B. Zhang, “Crack-free InGaN multiple quantum wells light-emitting diodes structures transferred from Si (111) substrate onto electroplating copper submount with embedded electrodes,” Appl. Phys. Lett. 100(24), 241112 (2012).
[CrossRef]

Yen, K. W.

S. H. Huang, R. H. Horng, S. L. Li, K. W. Yen, D. S. Wuu, C. K. Lin, H. Liu, “Thermally stable mirror structures for vertical-conducting GaN/mirror/Si light-emitting diodes,” IEEE Photon. Technol. Lett. 19(23), 1913–1915 (2007).
[CrossRef]

Yoo, M. C.

Z. S. Luo, Y. Cho, V. Loryuenyong, T. Sands, N. W. Cheung, M. C. Yoo, “Enhancement of (In, Ga)N light-emitting diode performance by laser liftoff and transfer from sapphire to silicon,” IEEE Photon. Technol. Lett. 14(10), 1400–1402 (2002).
[CrossRef]

Yu, C. C.

C. F. Chu, F. I. Lai, J. T. Chu, C. C. Yu, C. F. Lin, H. C. Kuo, S. C. Wang, “Study of GaN light-emitting diodes fabricated by laser lift-off technique,” J. Appl. Phys. 95(8), 3916–3922 (2004).
[CrossRef]

Zhang, B.

T. Chen, Y. Wang, P. Xiang, R. Luo, M. Liu, W. Yang, Y. Ren, Z. He, Y. Yang, W. Chen, X. Zhang, Z. Wu, Y. Liu, B. Zhang, “Crack-free InGaN multiple quantum wells light-emitting diodes structures transferred from Si (111) substrate onto electroplating copper submount with embedded electrodes,” Appl. Phys. Lett. 100(24), 241112 (2012).
[CrossRef]

Zhang, X.

T. Chen, Y. Wang, P. Xiang, R. Luo, M. Liu, W. Yang, Y. Ren, Z. He, Y. Yang, W. Chen, X. Zhang, Z. Wu, Y. Liu, B. Zhang, “Crack-free InGaN multiple quantum wells light-emitting diodes structures transferred from Si (111) substrate onto electroplating copper submount with embedded electrodes,” Appl. Phys. Lett. 100(24), 241112 (2012).
[CrossRef]

Zheng, X.

R. H. Horng, S. H. Huang, C. Y. Hsieh, X. Zheng, D. S. Wuu, “Enhanced luminance efficiency of wafer-bonded InGaN-GaN LEDs with double-side textured surfaces and omnidirectional reflectors,” IEEE J. Quantum Electron. 44(11), 1116–1123 (2008).
[CrossRef]

Appl. Phys. Lett.

W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, N. M. Johnson, “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off,” Appl. Phys. Lett. 75(10), 1360–1362 (1999).
[CrossRef]

M. K. Kelly, O. Ambacher, B. Dahlheimer, G. Groos, R. Dimitrov, H. Angerer, M. Stutzmann, “Laser processing for patterned and freestanding nitride films,” Appl. Phys. Lett. 69(12), 1749–1751 (1996).
[CrossRef]

W. S. Wong, T. Sands, N. W. Cheung, “Damage-free separation of GaN thin films from sapphire substrates,” Appl. Phys. Lett. 72(5), 599–601 (1998).
[CrossRef]

Y. S. Wu, J.-H. Cheng, W. C. Peng, H. Ouyang, “Effects of laser sources on the reverse-bias leakages of laser lift-off GaN-based lightemitting diodes,” Appl. Phys. Lett. 90(25), 251110 (2007).
[CrossRef]

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006).
[CrossRef]

T. Chen, Y. Wang, P. Xiang, R. Luo, M. Liu, W. Yang, Y. Ren, Z. He, Y. Yang, W. Chen, X. Zhang, Z. Wu, Y. Liu, B. Zhang, “Crack-free InGaN multiple quantum wells light-emitting diodes structures transferred from Si (111) substrate onto electroplating copper submount with embedded electrodes,” Appl. Phys. Lett. 100(24), 241112 (2012).
[CrossRef]

Electrochim. Acta

S. Kim, J.-H. Jang, J.-S. Lee, D. J. Duquette, “Stress behavior of electrodeposited copper films as mechanical supporters for light emitting diodes,” Electrochim. Acta 52(16), 5258–5265 (2007).
[CrossRef]

IEEE J. Quantum Electron.

R. H. Horng, S. H. Huang, C. Y. Hsieh, X. Zheng, D. S. Wuu, “Enhanced luminance efficiency of wafer-bonded InGaN-GaN LEDs with double-side textured surfaces and omnidirectional reflectors,” IEEE J. Quantum Electron. 44(11), 1116–1123 (2008).
[CrossRef]

IEEE Photon. Technol. Lett.

R. H. Horng, Y. A. Lu, D. S. Wuu, “Light Extraction Investigation for Thin-Film GaN Light-Emitting Diodes with Imbedded Electrodes,” IEEE Photon. Technol. Lett. 23(1), 54–56 (2011).
[CrossRef]

S. H. Huang, R. H. Horng, S. L. Li, K. W. Yen, D. S. Wuu, C. K. Lin, H. Liu, “Thermally stable mirror structures for vertical-conducting GaN/mirror/Si light-emitting diodes,” IEEE Photon. Technol. Lett. 19(23), 1913–1915 (2007).
[CrossRef]

Z. S. Luo, Y. Cho, V. Loryuenyong, T. Sands, N. W. Cheung, M. C. Yoo, “Enhancement of (In, Ga)N light-emitting diode performance by laser liftoff and transfer from sapphire to silicon,” IEEE Photon. Technol. Lett. 14(10), 1400–1402 (2002).
[CrossRef]

J. Appl. Phys.

C. F. Chu, F. I. Lai, J. T. Chu, C. C. Yu, C. F. Lin, H. C. Kuo, S. C. Wang, “Study of GaN light-emitting diodes fabricated by laser lift-off technique,” J. Appl. Phys. 95(8), 3916–3922 (2004).
[CrossRef]

Cited By

OSA participates in CrossRef's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (5)

Fig. 1
Fig. 1

Process flow: (a) epilayer, (b) mesa, (c) metal pad, (d) plane-view SEM image of CSB-LED, (e) insulator, (f) contact metal, (g) wafer bonding, (h) LLO, (i) surface textured, (j) expose contact metal, (k) the schematic of WTIE-LED and (l) plane-view SEM image of WTIE-LED.

Fig. 2
Fig. 2

XRD in 2θ/ω scan mode of CSB-LEDs on sapphire and WTIE-LEDs on silicon

Fig. 3
Fig. 3

Current as a function of voltage for WTIE-LEDs and CSB-LEDs

Fig. 4
Fig. 4

Luminance intensity as a function of injection current for WTIE-LEDs and CSB-LEDs

Fig. 5
Fig. 5

Output power as a function of injection current for WTIE-LEDs and CSB-LEDs.

Metrics