Abstract

We describe the fabrication of nanostructures on SiGe film by KrF excimer laser with nanosecond pulse width, and find a more direct and clear relationship between the laser irradiation conditions and the nanoscale structures. Perfect annular nanostructures around scattering points on the SiGe film are firstly obtained after the irradiation of a KrF excimer pulse laser beam (100 mJ/cm2) at different incident angles. The different shapes of annular structures are related to different energy distributions due to the optical interference between the scattered light and the incident beam. As laser energy increases, a threshold of pulse energy (230 mJ/cm2) is found, above which a droplet-like morphology completely replacing the surface annular structures. And the disorder morphology is mainly caused by the thermal effect of the incident beam.

© 2013 OSA

Full Article  |  PDF Article

References

  • View by:
  • |
  • |
  • |

  1. R. S. Taylor, C. Hnatovsky, E. Simova, P. P. Rajeev, D. M. Rayner, and P. B. Corkum, “Femtosecond laser erasing and rewriting of self-organized planar nanocracks in fused silica glass,” Opt. Lett.32(19), 2888–2890 (2007).
    [CrossRef] [PubMed]
  2. A. Y. Vorobyev and C. Guo, “Enhanced absorptance of gold following multipulse femtosecond laser ablation,” Phys. Rev. B72(19), 195422 (2005).
    [CrossRef]
  3. Y. Yang, J. Yang, C. Liang, and H. Wang, “Ultra-broadband enhanced absorption of metal surfaces structured by femtosecond laser pulses,” Opt. Express16(15), 11259–11265 (2008).
    [CrossRef] [PubMed]
  4. Y. Vorobyev and C. Guo, “Colorizing metals with femtosecond laser pulses,” Appl. Phys. Lett.92(4), 041914 (2008).
    [CrossRef]
  5. A. Y. Vorobyev, V. S. Makin, and C. L. Guo, “Brighter Light Sources from Black Metal: Significant Increase in Emission Efficiency of Incandescent Light Sources,” Phys. Rev. Lett.102(23), 234301 (2009).
    [CrossRef] [PubMed]
  6. M. Birnbaum, “Semiconductor Surface Damage Produced by Ruby Lasers,” J. Appl. Phys.36(11), 3688 (1965).
    [CrossRef]
  7. S. R. Brueck and D. J. Ehrlich, “Stimulated Surface-Plasma-Wave Scattering and Growth of a Periodic Structure in Laser-Photodeposited Metal Films,” Phys. Rev. Lett.48(24), 1678–1681 (1982).
    [CrossRef]
  8. Y. F. Lu, W. K. Choi, Y. Aoyagi, A. Kinomura, and K. Fujii, “Controllable laser-induced periodic structures at silicon dioxide/silicon interface by excimer laser irradiation,” J. Appl. Phys.80(12), 7052 (1996).
    [CrossRef]
  9. A. M. Ozkan, A. P. Malshe, T. A. Railkar, W. D. Brown, M. D. Shirk, and P. A. Molian, “Femtosecond laser-induced periodic structure writing on diamond crystals and microclusters,” Appl. Phys. Lett.75(23), 3716 (1999).
    [CrossRef]
  10. S. E. Clark and D. C. Emmony, “Ultraviolet-laser-induced periodic surface structures,” Phys. Rev. B Condens. Matter40(4), 2031–2041 (1989).
    [CrossRef] [PubMed]
  11. D. C. Emmony, R. P. Howson, and L. J. Willis, “Laser mirror damage in germanium at 10.6 μm,” Appl. Phys. Lett.23(11), 598–600 (1973).
    [CrossRef]
  12. K. J. Animesh, V. N. Kulkarni, D. K. Sood, and J. S. Uppal, “A melting model for pulsing laser annealing of implanted semiconductors,” J. Appl. Phys.52, 4882 (1982).
  13. M. Bolle and S. Lazare, “Characterization of submicrometer periodic structures produced on polymer surfaces with low-fluence ultraviolet laser radiation,” J. Appl. Phys.73(7), 3516 (1993).
    [CrossRef]
  14. Z. Guosheng, P. M. Fauchet, and A. E. Siegman, “Growth of spontaneous periodic surface structures on solids during laser illumination,” Phys. Rev. B26(10), 5366–5381 (1982).
    [CrossRef]
  15. Y. H. Han, X. L. Zhao, and S. L. Qu, “Polarization dependent ripples induced by femtosecond laser on dense flint (ZF6) glass,” Opt. Express19(20), 19150–19155 (2011).
    [CrossRef] [PubMed]
  16. M. Straub, M. Afshar, D. Feili, H. Seidel, and K. König, “Periodic nanostructures on Si(100) surfaces generated by high-repetition rate sub-15 fs pulsed near-infrared laser light,” Opt. Lett.37(2), 190–192 (2012).
    [CrossRef] [PubMed]
  17. Q. Z. Zhao, S. Malzer, and L. J. Wang, “Self-organized tungsten nanospikes grown on subwavelength ripples induced by femtosecond laser pulses,” Opt. Express15(24), 15741–15746 (2007).
    [CrossRef] [PubMed]
  18. M. Csete, S. Hild, A. Plettl, P. Ziemann, Z. Bor, and O. Martia, “Laser-assisted fabrication of materials,” Appl. Surf. Sci.453, 114–120 (2004).
  19. J. F. Young, J. S. Preston, H. M. Driel, and J. E. Sipe, “Laser-induced periodic surface structure. II. Experiments on Ge, Si, Al, and brass,” Phys. Rev. B27(2), 1155–1172 (1983).
    [CrossRef]
  20. G. S. Zhou, P. M. Fauchet, and A. E. Siegman, “Growth of spontaneous periodic surface structures on solids during laser illumination,” Phys. Rev. B26(10), 5366–5381 (1982).
    [CrossRef]
  21. J. E. Sipe, J. F. Young, J. S. Preston, and H. M. Driel, “Laser-induced periodic surface structure. I. Theory,” Phys. Rev. B27(2), 1141–1154 (1983).
    [CrossRef]
  22. N. Bloembergen, “Role of cracks, pores, and absorbing inclusions on laser induced damage threshold at surfaces of transparent dielectrics,” Appl. Opt.12(4), 661–664 (1973).
    [CrossRef] [PubMed]
  23. G. Q. Han, Y. G. Zeng, Y. Liu, J. Z. Yu, B. W. Cheng, and H. T. Yang, “Evolution of Ge and SiGe Quantum Dots under Excimer Laser Annealing,” Chin. Phys. Lett.25(1), 242–245 (2008).
    [CrossRef]
  24. C. Tetelin, X. Wallart, D. Stie’venard, J. P. Nys, and D. J. Gravesteijn, “Evidence of Ge island formation during thermal annealing of SiGe alloys: Combined atomic force microscopy and Auger electron spectroscopy study,” J. Vac. Sci. Technol. B16(1), 137 (1998).
    [CrossRef]
  25. G. Q. Han, Y. G. Zeng, Y. Liu, J. Z. Yu, B. W. Cheng, and H. T. Yang, “Small SiGe quantum dots obtained by excimer laser annealing,” J. Cryst. Growth310(16), 3746–3751 (2008).
    [CrossRef]
  26. S. Juodkazis, H. Misawa, O. A. Louchev, and K. Kitamura, “Femtosecond laser ablation of chalcogenide glass: explosive formation of nano-fibres against thermo-capillary growth of micro-spheres,” Nanotechnology17(19), 4802–4805 (2006).
    [CrossRef]

2012 (1)

2011 (1)

2009 (1)

A. Y. Vorobyev, V. S. Makin, and C. L. Guo, “Brighter Light Sources from Black Metal: Significant Increase in Emission Efficiency of Incandescent Light Sources,” Phys. Rev. Lett.102(23), 234301 (2009).
[CrossRef] [PubMed]

2008 (4)

Y. Vorobyev and C. Guo, “Colorizing metals with femtosecond laser pulses,” Appl. Phys. Lett.92(4), 041914 (2008).
[CrossRef]

G. Q. Han, Y. G. Zeng, Y. Liu, J. Z. Yu, B. W. Cheng, and H. T. Yang, “Evolution of Ge and SiGe Quantum Dots under Excimer Laser Annealing,” Chin. Phys. Lett.25(1), 242–245 (2008).
[CrossRef]

Y. Yang, J. Yang, C. Liang, and H. Wang, “Ultra-broadband enhanced absorption of metal surfaces structured by femtosecond laser pulses,” Opt. Express16(15), 11259–11265 (2008).
[CrossRef] [PubMed]

G. Q. Han, Y. G. Zeng, Y. Liu, J. Z. Yu, B. W. Cheng, and H. T. Yang, “Small SiGe quantum dots obtained by excimer laser annealing,” J. Cryst. Growth310(16), 3746–3751 (2008).
[CrossRef]

2007 (2)

2006 (1)

S. Juodkazis, H. Misawa, O. A. Louchev, and K. Kitamura, “Femtosecond laser ablation of chalcogenide glass: explosive formation of nano-fibres against thermo-capillary growth of micro-spheres,” Nanotechnology17(19), 4802–4805 (2006).
[CrossRef]

2005 (1)

A. Y. Vorobyev and C. Guo, “Enhanced absorptance of gold following multipulse femtosecond laser ablation,” Phys. Rev. B72(19), 195422 (2005).
[CrossRef]

2004 (1)

M. Csete, S. Hild, A. Plettl, P. Ziemann, Z. Bor, and O. Martia, “Laser-assisted fabrication of materials,” Appl. Surf. Sci.453, 114–120 (2004).

1999 (1)

A. M. Ozkan, A. P. Malshe, T. A. Railkar, W. D. Brown, M. D. Shirk, and P. A. Molian, “Femtosecond laser-induced periodic structure writing on diamond crystals and microclusters,” Appl. Phys. Lett.75(23), 3716 (1999).
[CrossRef]

1998 (1)

C. Tetelin, X. Wallart, D. Stie’venard, J. P. Nys, and D. J. Gravesteijn, “Evidence of Ge island formation during thermal annealing of SiGe alloys: Combined atomic force microscopy and Auger electron spectroscopy study,” J. Vac. Sci. Technol. B16(1), 137 (1998).
[CrossRef]

1996 (1)

Y. F. Lu, W. K. Choi, Y. Aoyagi, A. Kinomura, and K. Fujii, “Controllable laser-induced periodic structures at silicon dioxide/silicon interface by excimer laser irradiation,” J. Appl. Phys.80(12), 7052 (1996).
[CrossRef]

1993 (1)

M. Bolle and S. Lazare, “Characterization of submicrometer periodic structures produced on polymer surfaces with low-fluence ultraviolet laser radiation,” J. Appl. Phys.73(7), 3516 (1993).
[CrossRef]

1989 (1)

S. E. Clark and D. C. Emmony, “Ultraviolet-laser-induced periodic surface structures,” Phys. Rev. B Condens. Matter40(4), 2031–2041 (1989).
[CrossRef] [PubMed]

1983 (2)

J. F. Young, J. S. Preston, H. M. Driel, and J. E. Sipe, “Laser-induced periodic surface structure. II. Experiments on Ge, Si, Al, and brass,” Phys. Rev. B27(2), 1155–1172 (1983).
[CrossRef]

J. E. Sipe, J. F. Young, J. S. Preston, and H. M. Driel, “Laser-induced periodic surface structure. I. Theory,” Phys. Rev. B27(2), 1141–1154 (1983).
[CrossRef]

1982 (4)

G. S. Zhou, P. M. Fauchet, and A. E. Siegman, “Growth of spontaneous periodic surface structures on solids during laser illumination,” Phys. Rev. B26(10), 5366–5381 (1982).
[CrossRef]

Z. Guosheng, P. M. Fauchet, and A. E. Siegman, “Growth of spontaneous periodic surface structures on solids during laser illumination,” Phys. Rev. B26(10), 5366–5381 (1982).
[CrossRef]

K. J. Animesh, V. N. Kulkarni, D. K. Sood, and J. S. Uppal, “A melting model for pulsing laser annealing of implanted semiconductors,” J. Appl. Phys.52, 4882 (1982).

S. R. Brueck and D. J. Ehrlich, “Stimulated Surface-Plasma-Wave Scattering and Growth of a Periodic Structure in Laser-Photodeposited Metal Films,” Phys. Rev. Lett.48(24), 1678–1681 (1982).
[CrossRef]

1973 (2)

D. C. Emmony, R. P. Howson, and L. J. Willis, “Laser mirror damage in germanium at 10.6 μm,” Appl. Phys. Lett.23(11), 598–600 (1973).
[CrossRef]

N. Bloembergen, “Role of cracks, pores, and absorbing inclusions on laser induced damage threshold at surfaces of transparent dielectrics,” Appl. Opt.12(4), 661–664 (1973).
[CrossRef] [PubMed]

1965 (1)

M. Birnbaum, “Semiconductor Surface Damage Produced by Ruby Lasers,” J. Appl. Phys.36(11), 3688 (1965).
[CrossRef]

Afshar, M.

Animesh, K. J.

K. J. Animesh, V. N. Kulkarni, D. K. Sood, and J. S. Uppal, “A melting model for pulsing laser annealing of implanted semiconductors,” J. Appl. Phys.52, 4882 (1982).

Aoyagi, Y.

Y. F. Lu, W. K. Choi, Y. Aoyagi, A. Kinomura, and K. Fujii, “Controllable laser-induced periodic structures at silicon dioxide/silicon interface by excimer laser irradiation,” J. Appl. Phys.80(12), 7052 (1996).
[CrossRef]

Birnbaum, M.

M. Birnbaum, “Semiconductor Surface Damage Produced by Ruby Lasers,” J. Appl. Phys.36(11), 3688 (1965).
[CrossRef]

Bloembergen, N.

Bolle, M.

M. Bolle and S. Lazare, “Characterization of submicrometer periodic structures produced on polymer surfaces with low-fluence ultraviolet laser radiation,” J. Appl. Phys.73(7), 3516 (1993).
[CrossRef]

Bor, Z.

M. Csete, S. Hild, A. Plettl, P. Ziemann, Z. Bor, and O. Martia, “Laser-assisted fabrication of materials,” Appl. Surf. Sci.453, 114–120 (2004).

Brown, W. D.

A. M. Ozkan, A. P. Malshe, T. A. Railkar, W. D. Brown, M. D. Shirk, and P. A. Molian, “Femtosecond laser-induced periodic structure writing on diamond crystals and microclusters,” Appl. Phys. Lett.75(23), 3716 (1999).
[CrossRef]

Brueck, S. R.

S. R. Brueck and D. J. Ehrlich, “Stimulated Surface-Plasma-Wave Scattering and Growth of a Periodic Structure in Laser-Photodeposited Metal Films,” Phys. Rev. Lett.48(24), 1678–1681 (1982).
[CrossRef]

Cheng, B. W.

G. Q. Han, Y. G. Zeng, Y. Liu, J. Z. Yu, B. W. Cheng, and H. T. Yang, “Evolution of Ge and SiGe Quantum Dots under Excimer Laser Annealing,” Chin. Phys. Lett.25(1), 242–245 (2008).
[CrossRef]

G. Q. Han, Y. G. Zeng, Y. Liu, J. Z. Yu, B. W. Cheng, and H. T. Yang, “Small SiGe quantum dots obtained by excimer laser annealing,” J. Cryst. Growth310(16), 3746–3751 (2008).
[CrossRef]

Choi, W. K.

Y. F. Lu, W. K. Choi, Y. Aoyagi, A. Kinomura, and K. Fujii, “Controllable laser-induced periodic structures at silicon dioxide/silicon interface by excimer laser irradiation,” J. Appl. Phys.80(12), 7052 (1996).
[CrossRef]

Clark, S. E.

S. E. Clark and D. C. Emmony, “Ultraviolet-laser-induced periodic surface structures,” Phys. Rev. B Condens. Matter40(4), 2031–2041 (1989).
[CrossRef] [PubMed]

Corkum, P. B.

Csete, M.

M. Csete, S. Hild, A. Plettl, P. Ziemann, Z. Bor, and O. Martia, “Laser-assisted fabrication of materials,” Appl. Surf. Sci.453, 114–120 (2004).

Driel, H. M.

J. F. Young, J. S. Preston, H. M. Driel, and J. E. Sipe, “Laser-induced periodic surface structure. II. Experiments on Ge, Si, Al, and brass,” Phys. Rev. B27(2), 1155–1172 (1983).
[CrossRef]

J. E. Sipe, J. F. Young, J. S. Preston, and H. M. Driel, “Laser-induced periodic surface structure. I. Theory,” Phys. Rev. B27(2), 1141–1154 (1983).
[CrossRef]

Ehrlich, D. J.

S. R. Brueck and D. J. Ehrlich, “Stimulated Surface-Plasma-Wave Scattering and Growth of a Periodic Structure in Laser-Photodeposited Metal Films,” Phys. Rev. Lett.48(24), 1678–1681 (1982).
[CrossRef]

Emmony, D. C.

S. E. Clark and D. C. Emmony, “Ultraviolet-laser-induced periodic surface structures,” Phys. Rev. B Condens. Matter40(4), 2031–2041 (1989).
[CrossRef] [PubMed]

D. C. Emmony, R. P. Howson, and L. J. Willis, “Laser mirror damage in germanium at 10.6 μm,” Appl. Phys. Lett.23(11), 598–600 (1973).
[CrossRef]

Fauchet, P. M.

Z. Guosheng, P. M. Fauchet, and A. E. Siegman, “Growth of spontaneous periodic surface structures on solids during laser illumination,” Phys. Rev. B26(10), 5366–5381 (1982).
[CrossRef]

G. S. Zhou, P. M. Fauchet, and A. E. Siegman, “Growth of spontaneous periodic surface structures on solids during laser illumination,” Phys. Rev. B26(10), 5366–5381 (1982).
[CrossRef]

Feili, D.

Fujii, K.

Y. F. Lu, W. K. Choi, Y. Aoyagi, A. Kinomura, and K. Fujii, “Controllable laser-induced periodic structures at silicon dioxide/silicon interface by excimer laser irradiation,” J. Appl. Phys.80(12), 7052 (1996).
[CrossRef]

Gravesteijn, D. J.

C. Tetelin, X. Wallart, D. Stie’venard, J. P. Nys, and D. J. Gravesteijn, “Evidence of Ge island formation during thermal annealing of SiGe alloys: Combined atomic force microscopy and Auger electron spectroscopy study,” J. Vac. Sci. Technol. B16(1), 137 (1998).
[CrossRef]

Guo, C.

Y. Vorobyev and C. Guo, “Colorizing metals with femtosecond laser pulses,” Appl. Phys. Lett.92(4), 041914 (2008).
[CrossRef]

A. Y. Vorobyev and C. Guo, “Enhanced absorptance of gold following multipulse femtosecond laser ablation,” Phys. Rev. B72(19), 195422 (2005).
[CrossRef]

Guo, C. L.

A. Y. Vorobyev, V. S. Makin, and C. L. Guo, “Brighter Light Sources from Black Metal: Significant Increase in Emission Efficiency of Incandescent Light Sources,” Phys. Rev. Lett.102(23), 234301 (2009).
[CrossRef] [PubMed]

Guosheng, Z.

Z. Guosheng, P. M. Fauchet, and A. E. Siegman, “Growth of spontaneous periodic surface structures on solids during laser illumination,” Phys. Rev. B26(10), 5366–5381 (1982).
[CrossRef]

Han, G. Q.

G. Q. Han, Y. G. Zeng, Y. Liu, J. Z. Yu, B. W. Cheng, and H. T. Yang, “Evolution of Ge and SiGe Quantum Dots under Excimer Laser Annealing,” Chin. Phys. Lett.25(1), 242–245 (2008).
[CrossRef]

G. Q. Han, Y. G. Zeng, Y. Liu, J. Z. Yu, B. W. Cheng, and H. T. Yang, “Small SiGe quantum dots obtained by excimer laser annealing,” J. Cryst. Growth310(16), 3746–3751 (2008).
[CrossRef]

Han, Y. H.

Hild, S.

M. Csete, S. Hild, A. Plettl, P. Ziemann, Z. Bor, and O. Martia, “Laser-assisted fabrication of materials,” Appl. Surf. Sci.453, 114–120 (2004).

Hnatovsky, C.

Howson, R. P.

D. C. Emmony, R. P. Howson, and L. J. Willis, “Laser mirror damage in germanium at 10.6 μm,” Appl. Phys. Lett.23(11), 598–600 (1973).
[CrossRef]

Juodkazis, S.

S. Juodkazis, H. Misawa, O. A. Louchev, and K. Kitamura, “Femtosecond laser ablation of chalcogenide glass: explosive formation of nano-fibres against thermo-capillary growth of micro-spheres,” Nanotechnology17(19), 4802–4805 (2006).
[CrossRef]

Kinomura, A.

Y. F. Lu, W. K. Choi, Y. Aoyagi, A. Kinomura, and K. Fujii, “Controllable laser-induced periodic structures at silicon dioxide/silicon interface by excimer laser irradiation,” J. Appl. Phys.80(12), 7052 (1996).
[CrossRef]

Kitamura, K.

S. Juodkazis, H. Misawa, O. A. Louchev, and K. Kitamura, “Femtosecond laser ablation of chalcogenide glass: explosive formation of nano-fibres against thermo-capillary growth of micro-spheres,” Nanotechnology17(19), 4802–4805 (2006).
[CrossRef]

König, K.

Kulkarni, V. N.

K. J. Animesh, V. N. Kulkarni, D. K. Sood, and J. S. Uppal, “A melting model for pulsing laser annealing of implanted semiconductors,” J. Appl. Phys.52, 4882 (1982).

Lazare, S.

M. Bolle and S. Lazare, “Characterization of submicrometer periodic structures produced on polymer surfaces with low-fluence ultraviolet laser radiation,” J. Appl. Phys.73(7), 3516 (1993).
[CrossRef]

Liang, C.

Liu, Y.

G. Q. Han, Y. G. Zeng, Y. Liu, J. Z. Yu, B. W. Cheng, and H. T. Yang, “Small SiGe quantum dots obtained by excimer laser annealing,” J. Cryst. Growth310(16), 3746–3751 (2008).
[CrossRef]

G. Q. Han, Y. G. Zeng, Y. Liu, J. Z. Yu, B. W. Cheng, and H. T. Yang, “Evolution of Ge and SiGe Quantum Dots under Excimer Laser Annealing,” Chin. Phys. Lett.25(1), 242–245 (2008).
[CrossRef]

Louchev, O. A.

S. Juodkazis, H. Misawa, O. A. Louchev, and K. Kitamura, “Femtosecond laser ablation of chalcogenide glass: explosive formation of nano-fibres against thermo-capillary growth of micro-spheres,” Nanotechnology17(19), 4802–4805 (2006).
[CrossRef]

Lu, Y. F.

Y. F. Lu, W. K. Choi, Y. Aoyagi, A. Kinomura, and K. Fujii, “Controllable laser-induced periodic structures at silicon dioxide/silicon interface by excimer laser irradiation,” J. Appl. Phys.80(12), 7052 (1996).
[CrossRef]

Makin, V. S.

A. Y. Vorobyev, V. S. Makin, and C. L. Guo, “Brighter Light Sources from Black Metal: Significant Increase in Emission Efficiency of Incandescent Light Sources,” Phys. Rev. Lett.102(23), 234301 (2009).
[CrossRef] [PubMed]

Malshe, A. P.

A. M. Ozkan, A. P. Malshe, T. A. Railkar, W. D. Brown, M. D. Shirk, and P. A. Molian, “Femtosecond laser-induced periodic structure writing on diamond crystals and microclusters,” Appl. Phys. Lett.75(23), 3716 (1999).
[CrossRef]

Malzer, S.

Martia, O.

M. Csete, S. Hild, A. Plettl, P. Ziemann, Z. Bor, and O. Martia, “Laser-assisted fabrication of materials,” Appl. Surf. Sci.453, 114–120 (2004).

Misawa, H.

S. Juodkazis, H. Misawa, O. A. Louchev, and K. Kitamura, “Femtosecond laser ablation of chalcogenide glass: explosive formation of nano-fibres against thermo-capillary growth of micro-spheres,” Nanotechnology17(19), 4802–4805 (2006).
[CrossRef]

Molian, P. A.

A. M. Ozkan, A. P. Malshe, T. A. Railkar, W. D. Brown, M. D. Shirk, and P. A. Molian, “Femtosecond laser-induced periodic structure writing on diamond crystals and microclusters,” Appl. Phys. Lett.75(23), 3716 (1999).
[CrossRef]

Nys, J. P.

C. Tetelin, X. Wallart, D. Stie’venard, J. P. Nys, and D. J. Gravesteijn, “Evidence of Ge island formation during thermal annealing of SiGe alloys: Combined atomic force microscopy and Auger electron spectroscopy study,” J. Vac. Sci. Technol. B16(1), 137 (1998).
[CrossRef]

Ozkan, A. M.

A. M. Ozkan, A. P. Malshe, T. A. Railkar, W. D. Brown, M. D. Shirk, and P. A. Molian, “Femtosecond laser-induced periodic structure writing on diamond crystals and microclusters,” Appl. Phys. Lett.75(23), 3716 (1999).
[CrossRef]

Plettl, A.

M. Csete, S. Hild, A. Plettl, P. Ziemann, Z. Bor, and O. Martia, “Laser-assisted fabrication of materials,” Appl. Surf. Sci.453, 114–120 (2004).

Preston, J. S.

J. F. Young, J. S. Preston, H. M. Driel, and J. E. Sipe, “Laser-induced periodic surface structure. II. Experiments on Ge, Si, Al, and brass,” Phys. Rev. B27(2), 1155–1172 (1983).
[CrossRef]

J. E. Sipe, J. F. Young, J. S. Preston, and H. M. Driel, “Laser-induced periodic surface structure. I. Theory,” Phys. Rev. B27(2), 1141–1154 (1983).
[CrossRef]

Qu, S. L.

Railkar, T. A.

A. M. Ozkan, A. P. Malshe, T. A. Railkar, W. D. Brown, M. D. Shirk, and P. A. Molian, “Femtosecond laser-induced periodic structure writing on diamond crystals and microclusters,” Appl. Phys. Lett.75(23), 3716 (1999).
[CrossRef]

Rajeev, P. P.

Rayner, D. M.

Seidel, H.

Shirk, M. D.

A. M. Ozkan, A. P. Malshe, T. A. Railkar, W. D. Brown, M. D. Shirk, and P. A. Molian, “Femtosecond laser-induced periodic structure writing on diamond crystals and microclusters,” Appl. Phys. Lett.75(23), 3716 (1999).
[CrossRef]

Siegman, A. E.

Z. Guosheng, P. M. Fauchet, and A. E. Siegman, “Growth of spontaneous periodic surface structures on solids during laser illumination,” Phys. Rev. B26(10), 5366–5381 (1982).
[CrossRef]

G. S. Zhou, P. M. Fauchet, and A. E. Siegman, “Growth of spontaneous periodic surface structures on solids during laser illumination,” Phys. Rev. B26(10), 5366–5381 (1982).
[CrossRef]

Simova, E.

Sipe, J. E.

J. F. Young, J. S. Preston, H. M. Driel, and J. E. Sipe, “Laser-induced periodic surface structure. II. Experiments on Ge, Si, Al, and brass,” Phys. Rev. B27(2), 1155–1172 (1983).
[CrossRef]

J. E. Sipe, J. F. Young, J. S. Preston, and H. M. Driel, “Laser-induced periodic surface structure. I. Theory,” Phys. Rev. B27(2), 1141–1154 (1983).
[CrossRef]

Sood, D. K.

K. J. Animesh, V. N. Kulkarni, D. K. Sood, and J. S. Uppal, “A melting model for pulsing laser annealing of implanted semiconductors,” J. Appl. Phys.52, 4882 (1982).

Stie’venard, D.

C. Tetelin, X. Wallart, D. Stie’venard, J. P. Nys, and D. J. Gravesteijn, “Evidence of Ge island formation during thermal annealing of SiGe alloys: Combined atomic force microscopy and Auger electron spectroscopy study,” J. Vac. Sci. Technol. B16(1), 137 (1998).
[CrossRef]

Straub, M.

Taylor, R. S.

Tetelin, C.

C. Tetelin, X. Wallart, D. Stie’venard, J. P. Nys, and D. J. Gravesteijn, “Evidence of Ge island formation during thermal annealing of SiGe alloys: Combined atomic force microscopy and Auger electron spectroscopy study,” J. Vac. Sci. Technol. B16(1), 137 (1998).
[CrossRef]

Uppal, J. S.

K. J. Animesh, V. N. Kulkarni, D. K. Sood, and J. S. Uppal, “A melting model for pulsing laser annealing of implanted semiconductors,” J. Appl. Phys.52, 4882 (1982).

Vorobyev, A. Y.

A. Y. Vorobyev, V. S. Makin, and C. L. Guo, “Brighter Light Sources from Black Metal: Significant Increase in Emission Efficiency of Incandescent Light Sources,” Phys. Rev. Lett.102(23), 234301 (2009).
[CrossRef] [PubMed]

A. Y. Vorobyev and C. Guo, “Enhanced absorptance of gold following multipulse femtosecond laser ablation,” Phys. Rev. B72(19), 195422 (2005).
[CrossRef]

Vorobyev, Y.

Y. Vorobyev and C. Guo, “Colorizing metals with femtosecond laser pulses,” Appl. Phys. Lett.92(4), 041914 (2008).
[CrossRef]

Wallart, X.

C. Tetelin, X. Wallart, D. Stie’venard, J. P. Nys, and D. J. Gravesteijn, “Evidence of Ge island formation during thermal annealing of SiGe alloys: Combined atomic force microscopy and Auger electron spectroscopy study,” J. Vac. Sci. Technol. B16(1), 137 (1998).
[CrossRef]

Wang, H.

Wang, L. J.

Willis, L. J.

D. C. Emmony, R. P. Howson, and L. J. Willis, “Laser mirror damage in germanium at 10.6 μm,” Appl. Phys. Lett.23(11), 598–600 (1973).
[CrossRef]

Yang, H. T.

G. Q. Han, Y. G. Zeng, Y. Liu, J. Z. Yu, B. W. Cheng, and H. T. Yang, “Evolution of Ge and SiGe Quantum Dots under Excimer Laser Annealing,” Chin. Phys. Lett.25(1), 242–245 (2008).
[CrossRef]

G. Q. Han, Y. G. Zeng, Y. Liu, J. Z. Yu, B. W. Cheng, and H. T. Yang, “Small SiGe quantum dots obtained by excimer laser annealing,” J. Cryst. Growth310(16), 3746–3751 (2008).
[CrossRef]

Yang, J.

Yang, Y.

Young, J. F.

J. E. Sipe, J. F. Young, J. S. Preston, and H. M. Driel, “Laser-induced periodic surface structure. I. Theory,” Phys. Rev. B27(2), 1141–1154 (1983).
[CrossRef]

J. F. Young, J. S. Preston, H. M. Driel, and J. E. Sipe, “Laser-induced periodic surface structure. II. Experiments on Ge, Si, Al, and brass,” Phys. Rev. B27(2), 1155–1172 (1983).
[CrossRef]

Yu, J. Z.

G. Q. Han, Y. G. Zeng, Y. Liu, J. Z. Yu, B. W. Cheng, and H. T. Yang, “Evolution of Ge and SiGe Quantum Dots under Excimer Laser Annealing,” Chin. Phys. Lett.25(1), 242–245 (2008).
[CrossRef]

G. Q. Han, Y. G. Zeng, Y. Liu, J. Z. Yu, B. W. Cheng, and H. T. Yang, “Small SiGe quantum dots obtained by excimer laser annealing,” J. Cryst. Growth310(16), 3746–3751 (2008).
[CrossRef]

Zeng, Y. G.

G. Q. Han, Y. G. Zeng, Y. Liu, J. Z. Yu, B. W. Cheng, and H. T. Yang, “Small SiGe quantum dots obtained by excimer laser annealing,” J. Cryst. Growth310(16), 3746–3751 (2008).
[CrossRef]

G. Q. Han, Y. G. Zeng, Y. Liu, J. Z. Yu, B. W. Cheng, and H. T. Yang, “Evolution of Ge and SiGe Quantum Dots under Excimer Laser Annealing,” Chin. Phys. Lett.25(1), 242–245 (2008).
[CrossRef]

Zhao, Q. Z.

Zhao, X. L.

Zhou, G. S.

G. S. Zhou, P. M. Fauchet, and A. E. Siegman, “Growth of spontaneous periodic surface structures on solids during laser illumination,” Phys. Rev. B26(10), 5366–5381 (1982).
[CrossRef]

Ziemann, P.

M. Csete, S. Hild, A. Plettl, P. Ziemann, Z. Bor, and O. Martia, “Laser-assisted fabrication of materials,” Appl. Surf. Sci.453, 114–120 (2004).

Appl. Opt. (1)

Appl. Phys. Lett. (3)

Y. Vorobyev and C. Guo, “Colorizing metals with femtosecond laser pulses,” Appl. Phys. Lett.92(4), 041914 (2008).
[CrossRef]

D. C. Emmony, R. P. Howson, and L. J. Willis, “Laser mirror damage in germanium at 10.6 μm,” Appl. Phys. Lett.23(11), 598–600 (1973).
[CrossRef]

A. M. Ozkan, A. P. Malshe, T. A. Railkar, W. D. Brown, M. D. Shirk, and P. A. Molian, “Femtosecond laser-induced periodic structure writing on diamond crystals and microclusters,” Appl. Phys. Lett.75(23), 3716 (1999).
[CrossRef]

Appl. Surf. Sci. (1)

M. Csete, S. Hild, A. Plettl, P. Ziemann, Z. Bor, and O. Martia, “Laser-assisted fabrication of materials,” Appl. Surf. Sci.453, 114–120 (2004).

Chin. Phys. Lett. (1)

G. Q. Han, Y. G. Zeng, Y. Liu, J. Z. Yu, B. W. Cheng, and H. T. Yang, “Evolution of Ge and SiGe Quantum Dots under Excimer Laser Annealing,” Chin. Phys. Lett.25(1), 242–245 (2008).
[CrossRef]

J. Appl. Phys. (4)

K. J. Animesh, V. N. Kulkarni, D. K. Sood, and J. S. Uppal, “A melting model for pulsing laser annealing of implanted semiconductors,” J. Appl. Phys.52, 4882 (1982).

M. Bolle and S. Lazare, “Characterization of submicrometer periodic structures produced on polymer surfaces with low-fluence ultraviolet laser radiation,” J. Appl. Phys.73(7), 3516 (1993).
[CrossRef]

M. Birnbaum, “Semiconductor Surface Damage Produced by Ruby Lasers,” J. Appl. Phys.36(11), 3688 (1965).
[CrossRef]

Y. F. Lu, W. K. Choi, Y. Aoyagi, A. Kinomura, and K. Fujii, “Controllable laser-induced periodic structures at silicon dioxide/silicon interface by excimer laser irradiation,” J. Appl. Phys.80(12), 7052 (1996).
[CrossRef]

J. Cryst. Growth (1)

G. Q. Han, Y. G. Zeng, Y. Liu, J. Z. Yu, B. W. Cheng, and H. T. Yang, “Small SiGe quantum dots obtained by excimer laser annealing,” J. Cryst. Growth310(16), 3746–3751 (2008).
[CrossRef]

J. Vac. Sci. Technol. B (1)

C. Tetelin, X. Wallart, D. Stie’venard, J. P. Nys, and D. J. Gravesteijn, “Evidence of Ge island formation during thermal annealing of SiGe alloys: Combined atomic force microscopy and Auger electron spectroscopy study,” J. Vac. Sci. Technol. B16(1), 137 (1998).
[CrossRef]

Nanotechnology (1)

S. Juodkazis, H. Misawa, O. A. Louchev, and K. Kitamura, “Femtosecond laser ablation of chalcogenide glass: explosive formation of nano-fibres against thermo-capillary growth of micro-spheres,” Nanotechnology17(19), 4802–4805 (2006).
[CrossRef]

Opt. Express (3)

Opt. Lett. (2)

Phys. Rev. B (5)

J. F. Young, J. S. Preston, H. M. Driel, and J. E. Sipe, “Laser-induced periodic surface structure. II. Experiments on Ge, Si, Al, and brass,” Phys. Rev. B27(2), 1155–1172 (1983).
[CrossRef]

G. S. Zhou, P. M. Fauchet, and A. E. Siegman, “Growth of spontaneous periodic surface structures on solids during laser illumination,” Phys. Rev. B26(10), 5366–5381 (1982).
[CrossRef]

J. E. Sipe, J. F. Young, J. S. Preston, and H. M. Driel, “Laser-induced periodic surface structure. I. Theory,” Phys. Rev. B27(2), 1141–1154 (1983).
[CrossRef]

Z. Guosheng, P. M. Fauchet, and A. E. Siegman, “Growth of spontaneous periodic surface structures on solids during laser illumination,” Phys. Rev. B26(10), 5366–5381 (1982).
[CrossRef]

A. Y. Vorobyev and C. Guo, “Enhanced absorptance of gold following multipulse femtosecond laser ablation,” Phys. Rev. B72(19), 195422 (2005).
[CrossRef]

Phys. Rev. B Condens. Matter (1)

S. E. Clark and D. C. Emmony, “Ultraviolet-laser-induced periodic surface structures,” Phys. Rev. B Condens. Matter40(4), 2031–2041 (1989).
[CrossRef] [PubMed]

Phys. Rev. Lett. (2)

S. R. Brueck and D. J. Ehrlich, “Stimulated Surface-Plasma-Wave Scattering and Growth of a Periodic Structure in Laser-Photodeposited Metal Films,” Phys. Rev. Lett.48(24), 1678–1681 (1982).
[CrossRef]

A. Y. Vorobyev, V. S. Makin, and C. L. Guo, “Brighter Light Sources from Black Metal: Significant Increase in Emission Efficiency of Incandescent Light Sources,” Phys. Rev. Lett.102(23), 234301 (2009).
[CrossRef] [PubMed]

Cited By

OSA participates in CrossRef's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (5)

Fig. 1
Fig. 1

SEM images of SiGe surface samples: (a) and (b) are as-grown samples. (c) and (d) are SiGe surface annular structures fabricated by KrF excimer laser with the energy density of 100mJ/cm2. (e), (f) are the close-up images for (c) and (d) respectively.

Fig. 2
Fig. 2

The comparison of experiments and fitting results is list in this figure. The solid lines represent the fitting lines of the periodic length vs incident angle according to the Eq λ/(1±sin(θ)) . At the backward position, the annular structures disappear for the case of 60° incident angle, and we use “×” to remark the theoretical result.

Fig. 3
Fig. 3

Imagines of the comparison diagram of experiment and simulated results with single scattering point at different incident angels.

Fig. 4
Fig. 4

Imagines of the comparison diagram of experiment and simulated results at normal incident angle.

Fig. 5
Fig. 5

SEM images of annular structures generated on SiGe surface by KrF excimer laser with 30° incident angel at different energy density. (a): 90mJ/cm2, (b): 150mJ/cm2, (c): 230mJ/cm2, (d): 230mJ/cm2, respectively.

Equations (4)

Equations on this page are rendered with MathJax. Learn more.

U 2 (P)= A 2 r 2 exp[ j k r 2 ]
U 1 ( P )= A 1 exp[ j k r 1 ] =A 1 exp[ jk( xcosα+ycosα ) ]
U( P )= U 1 ( P )+ U 2 ( P )= A 1 exp[ j k r 1 ]+ A 2 r 2 exp[ j k r 2 ], I=U( P ) U * ( P ).
U( P )= U 1 ( P )+ U 2 ( P )+ U 3 ( P )+ U 4 ( P )= A 1 exp[ j k r 1 ]+ A 2 r 2 exp[ j k r 2 ]+ A 3 r 3 exp[ j k r 3 ]+ A 4 r 4 exp[ j k r 4 ]

Metrics