Abstract

The present study demonstrates the optoelectrical and low-frequency noise characteristics of ZnO–SiO2 nanocomposite solar-blind metal–semiconductor–metal photodetectors (MSM PDs) on flexible polyethersulfone (PES) substrate with and without an organosilicon [SiOx(CH3)] buffer layer. For a given bandwidth of 100 Hz and a −5 V applied bias, the noise equivalent powers of the ZnO–SiO2 nanocomposite MSM PD on PES with and without the SiOx(CH3) buffer layer were 1.39 × 10−14 and 5.72 × 10−14 W at 240nm, respectively, corresponding to the normalized detectivities of 5.04 × 1014 and 1.22 × 1014 Hz0.5 W−1, respectively. These findings indicate that a lower noise level and a higher detectivity can be achieved for ZnO–SiO2 nanocomposite MSM PDs on PES by introducing a SiOx(CH3) buffer layer.

© 2013 OSA

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  1. C. Y. Lee, M. Y. Lin, W. H. Wu, J. Y. Wang, Y. Chou, W. F. Su, Y. F. Chen, and C. F. Lin, “Flexible ZnO transparent thin-film transistors by a solution-based process at various solution concentrations,” Semicond. Sci. Technol.25(10), 105008 (2010).
    [CrossRef]
  2. L. W. Ji, C. Z. Wu, C. M. Lin, T. H. Meen, K. T. Lam, S. M. Peng, S. J. Young, and C. H. Liu, “Characteristic improvements of ZnO-based metal–semiconductor–metal photodetector on flexible substrate with ZnO cap layer,” Jpn. J. Appl. Phys.49(5), 052201 (2010).
    [CrossRef]
  3. H. Jiang and T. Egawa, “High quality AlGaN solar-blind Schottky photodiodes fabricated on AIN/sapphire template,” Appl. Phys. Lett.90(12), 121121 (2007).
    [CrossRef]
  4. T. Tut, N. Biyikli, I. Kimukin, T. Kartaloglu, O. Aytur, M. S. Unlu, and E. Ozbay, “High bandwidth-efficiency solar-blind AlGaN Schottky photodiodes with low dark current,” Solid-State Electron.49(1), 117–122 (2005).
    [CrossRef]
  5. T. Tut, M. Gokkavas, A. Inal, and E. Ozbay, “AlxGa1−xN-based avalanche photodiodes with high reproducible avalanche gain,” Appl. Phys. Lett.90(16), 163506 (2007).
    [CrossRef]
  6. V. V. Kuryatkov, B. A. Borisov, S. A. Nikishin, Yu. Kudryavtsev, R. Asomoza, V. I. Kuchinskii, G. S. Sokolovskii, D. Y. Song, and M. Holtz, “247 nm solar-blind ultraviolet p-i-n photodetector,” J. Appl. Phys.100(9), 096104 (2006).
    [CrossRef]
  7. A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. Hochedez, “193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett.92(5), 053501 (2008).
    [CrossRef]
  8. A. BenMoussa, A. Soltani, U. Schühle, K. Haenen, Y. M. Chong, W. J. Zhang, R. Dahal, J. Y. Lin, H. X. Jiang, H. A. Barkad, B. BenMoussa, D. Bolsee, C. Hermans, U. Kroth, C. Laubis, V. Mortet, J. C. De Jaeger, B. Giordanengo, M. Richter, F. Scholze, and J. F. Hochedez, “Recent developments of wide-bandgap semiconductor based UV sensors,” Diamond Related Materials18(5-8), 860–864 (2009).
    [CrossRef]
  9. W. F. Yang, F. Zhang, Z. G. Liu, and Z. G. Wu, “Effects of annealing on the performance of 4H-SiC metal–semiconductor–metal ultraviolet photodetectors,” Mater. Sci. Semicond. Process.11(2), 59–62 (2008).
    [CrossRef]
  10. Y. N. Hou, Z. X. Mei, Z. L. Liu, T. C. Zhang, and X. L. Du, “Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain,” Appl. Phys. Lett.98(10), 103506 (2011).
    [CrossRef]
  11. U. Ozgur, Ya. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doğan, V. Avrutin, S. J. Cho, and H. Morkoç, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys.98(4), 041301 (2005).
    [CrossRef]
  12. J. W. Mares, R. C. Boutwell, M. Wei, A. Scheurer, and W. V. Schoenfeld, “Deep-ultraviolet photodetectors from epitaxially grown NixMg1−xO,” Appl. Phys. Lett.97(16), 161113 (2010).
    [CrossRef]
  13. T. P. Chen, S. J. Young, S. J. Chang, C. H. Hsiao, and Y. J. Hsu, “Bending effects of ZnO nanorod metal-semiconductor-metal photodetectors on flexible polyimide substrate,” Nanoscale Res. Lett.7(1), 214 (2012).
    [CrossRef] [PubMed]
  14. S. Zh. Karazhanov, P. Ravindran, H. Fjellvåg, and B. G. Svensson, “Electronic structure and optical properties of ZnSiO3 and Zn2SiO4,” J. Appl. Phys.106(12), 123701 (2009).
    [CrossRef]
  15. S. Chakrabarti, D. Ganguli, and S. Chaudhuri, “Photoluminescence of ZnO nanocrystallites confined in sol–gel silica matrix,” J. Phys. D Appl. Phys.36(2), 146–151 (2003).
    [CrossRef]
  16. V. Musat, E. Fortunato, S. Petrescu, and A. M. Botelho do Rego, “ZnO/SiO2 nanocomposite thin films by sol–gel method,” Phys. Status Solidi., A Appl. Mater. Sci.205(8), 2075–2079 (2008).
    [CrossRef]
  17. H. Amekura, K. Kono, N. Kishimoto, and C. Buchal, “Formation of zinc-oxide nanoparticles in SiO2 by ion implantation combined with thermal oxidation,” Nucl. Instrum. Methods Phys. Res. B91, 96–99 (2007).
  18. C. Li, Y. Bando, M. Liao, Y. Koide, and D. Golberg, “Visible-blind deep-ultraviolet Schottky photodetector with a photocurrent gain based on individual Zn2GeO4 nanowire,” Appl. Phys. Lett.97(16), 161102 (2010).
    [CrossRef]
  19. C. Y. Lu, S. P. Chang, S. J. Chang, Y. Z. Chiou, C. F. Kuo, H. M. Chang, C. L. Hsu, and I. C. Chen, “Noise characteristics of ZnO-nanowire photodetectors prepared on ZnO:Ga/glass templates,” IEEE Sens. J.7(7), 1020–11024 (2007).
    [CrossRef]
  20. K. H. Lee, R. W. Chuang, P. C. Chang, S. J. Chang, Y. C. Wang, C. L. Yu, J. C. Lin, and S. L. Wu, “Nitride-based MSM photodetectors with a HEMT structure and a low-temperature AlGaN intermediate layer,” J. Electrochem. Soc. 155, 959–963 (20108).
  21. S. J. Young, L. W. Ji, S. J. Chang, and Y. K. Su, “ZnO metal–semiconductor–metal ultraviolet sensors with various contact electrodes,” J. Cryst. Growth293(1), 43–47 (2006).
    [CrossRef]
  22. S. J. Young, L. W. Ji, S. J. Chang, and X. L. Du, “ZnO metal-semiconductor-metal ultraviolet photodiodes with Au contacts,” J. Electrochem. Soc.154(1), H26–H29 (2007).
    [CrossRef]

2012 (1)

T. P. Chen, S. J. Young, S. J. Chang, C. H. Hsiao, and Y. J. Hsu, “Bending effects of ZnO nanorod metal-semiconductor-metal photodetectors on flexible polyimide substrate,” Nanoscale Res. Lett.7(1), 214 (2012).
[CrossRef] [PubMed]

2011 (1)

Y. N. Hou, Z. X. Mei, Z. L. Liu, T. C. Zhang, and X. L. Du, “Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain,” Appl. Phys. Lett.98(10), 103506 (2011).
[CrossRef]

2010 (4)

J. W. Mares, R. C. Boutwell, M. Wei, A. Scheurer, and W. V. Schoenfeld, “Deep-ultraviolet photodetectors from epitaxially grown NixMg1−xO,” Appl. Phys. Lett.97(16), 161113 (2010).
[CrossRef]

C. Y. Lee, M. Y. Lin, W. H. Wu, J. Y. Wang, Y. Chou, W. F. Su, Y. F. Chen, and C. F. Lin, “Flexible ZnO transparent thin-film transistors by a solution-based process at various solution concentrations,” Semicond. Sci. Technol.25(10), 105008 (2010).
[CrossRef]

L. W. Ji, C. Z. Wu, C. M. Lin, T. H. Meen, K. T. Lam, S. M. Peng, S. J. Young, and C. H. Liu, “Characteristic improvements of ZnO-based metal–semiconductor–metal photodetector on flexible substrate with ZnO cap layer,” Jpn. J. Appl. Phys.49(5), 052201 (2010).
[CrossRef]

C. Li, Y. Bando, M. Liao, Y. Koide, and D. Golberg, “Visible-blind deep-ultraviolet Schottky photodetector with a photocurrent gain based on individual Zn2GeO4 nanowire,” Appl. Phys. Lett.97(16), 161102 (2010).
[CrossRef]

2009 (2)

A. BenMoussa, A. Soltani, U. Schühle, K. Haenen, Y. M. Chong, W. J. Zhang, R. Dahal, J. Y. Lin, H. X. Jiang, H. A. Barkad, B. BenMoussa, D. Bolsee, C. Hermans, U. Kroth, C. Laubis, V. Mortet, J. C. De Jaeger, B. Giordanengo, M. Richter, F. Scholze, and J. F. Hochedez, “Recent developments of wide-bandgap semiconductor based UV sensors,” Diamond Related Materials18(5-8), 860–864 (2009).
[CrossRef]

S. Zh. Karazhanov, P. Ravindran, H. Fjellvåg, and B. G. Svensson, “Electronic structure and optical properties of ZnSiO3 and Zn2SiO4,” J. Appl. Phys.106(12), 123701 (2009).
[CrossRef]

2008 (3)

V. Musat, E. Fortunato, S. Petrescu, and A. M. Botelho do Rego, “ZnO/SiO2 nanocomposite thin films by sol–gel method,” Phys. Status Solidi., A Appl. Mater. Sci.205(8), 2075–2079 (2008).
[CrossRef]

A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. Hochedez, “193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett.92(5), 053501 (2008).
[CrossRef]

W. F. Yang, F. Zhang, Z. G. Liu, and Z. G. Wu, “Effects of annealing on the performance of 4H-SiC metal–semiconductor–metal ultraviolet photodetectors,” Mater. Sci. Semicond. Process.11(2), 59–62 (2008).
[CrossRef]

2007 (5)

T. Tut, M. Gokkavas, A. Inal, and E. Ozbay, “AlxGa1−xN-based avalanche photodiodes with high reproducible avalanche gain,” Appl. Phys. Lett.90(16), 163506 (2007).
[CrossRef]

H. Jiang and T. Egawa, “High quality AlGaN solar-blind Schottky photodiodes fabricated on AIN/sapphire template,” Appl. Phys. Lett.90(12), 121121 (2007).
[CrossRef]

H. Amekura, K. Kono, N. Kishimoto, and C. Buchal, “Formation of zinc-oxide nanoparticles in SiO2 by ion implantation combined with thermal oxidation,” Nucl. Instrum. Methods Phys. Res. B91, 96–99 (2007).

C. Y. Lu, S. P. Chang, S. J. Chang, Y. Z. Chiou, C. F. Kuo, H. M. Chang, C. L. Hsu, and I. C. Chen, “Noise characteristics of ZnO-nanowire photodetectors prepared on ZnO:Ga/glass templates,” IEEE Sens. J.7(7), 1020–11024 (2007).
[CrossRef]

S. J. Young, L. W. Ji, S. J. Chang, and X. L. Du, “ZnO metal-semiconductor-metal ultraviolet photodiodes with Au contacts,” J. Electrochem. Soc.154(1), H26–H29 (2007).
[CrossRef]

2006 (2)

S. J. Young, L. W. Ji, S. J. Chang, and Y. K. Su, “ZnO metal–semiconductor–metal ultraviolet sensors with various contact electrodes,” J. Cryst. Growth293(1), 43–47 (2006).
[CrossRef]

V. V. Kuryatkov, B. A. Borisov, S. A. Nikishin, Yu. Kudryavtsev, R. Asomoza, V. I. Kuchinskii, G. S. Sokolovskii, D. Y. Song, and M. Holtz, “247 nm solar-blind ultraviolet p-i-n photodetector,” J. Appl. Phys.100(9), 096104 (2006).
[CrossRef]

2005 (2)

T. Tut, N. Biyikli, I. Kimukin, T. Kartaloglu, O. Aytur, M. S. Unlu, and E. Ozbay, “High bandwidth-efficiency solar-blind AlGaN Schottky photodiodes with low dark current,” Solid-State Electron.49(1), 117–122 (2005).
[CrossRef]

U. Ozgur, Ya. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doğan, V. Avrutin, S. J. Cho, and H. Morkoç, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys.98(4), 041301 (2005).
[CrossRef]

2003 (1)

S. Chakrabarti, D. Ganguli, and S. Chaudhuri, “Photoluminescence of ZnO nanocrystallites confined in sol–gel silica matrix,” J. Phys. D Appl. Phys.36(2), 146–151 (2003).
[CrossRef]

Alivov, Ya. I.

U. Ozgur, Ya. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doğan, V. Avrutin, S. J. Cho, and H. Morkoç, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys.98(4), 041301 (2005).
[CrossRef]

Amekura, H.

H. Amekura, K. Kono, N. Kishimoto, and C. Buchal, “Formation of zinc-oxide nanoparticles in SiO2 by ion implantation combined with thermal oxidation,” Nucl. Instrum. Methods Phys. Res. B91, 96–99 (2007).

Asomoza, R.

V. V. Kuryatkov, B. A. Borisov, S. A. Nikishin, Yu. Kudryavtsev, R. Asomoza, V. I. Kuchinskii, G. S. Sokolovskii, D. Y. Song, and M. Holtz, “247 nm solar-blind ultraviolet p-i-n photodetector,” J. Appl. Phys.100(9), 096104 (2006).
[CrossRef]

Avrutin, V.

U. Ozgur, Ya. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doğan, V. Avrutin, S. J. Cho, and H. Morkoç, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys.98(4), 041301 (2005).
[CrossRef]

Aytur, O.

T. Tut, N. Biyikli, I. Kimukin, T. Kartaloglu, O. Aytur, M. S. Unlu, and E. Ozbay, “High bandwidth-efficiency solar-blind AlGaN Schottky photodiodes with low dark current,” Solid-State Electron.49(1), 117–122 (2005).
[CrossRef]

Bando, Y.

C. Li, Y. Bando, M. Liao, Y. Koide, and D. Golberg, “Visible-blind deep-ultraviolet Schottky photodetector with a photocurrent gain based on individual Zn2GeO4 nanowire,” Appl. Phys. Lett.97(16), 161102 (2010).
[CrossRef]

Barkad, H. A.

A. BenMoussa, A. Soltani, U. Schühle, K. Haenen, Y. M. Chong, W. J. Zhang, R. Dahal, J. Y. Lin, H. X. Jiang, H. A. Barkad, B. BenMoussa, D. Bolsee, C. Hermans, U. Kroth, C. Laubis, V. Mortet, J. C. De Jaeger, B. Giordanengo, M. Richter, F. Scholze, and J. F. Hochedez, “Recent developments of wide-bandgap semiconductor based UV sensors,” Diamond Related Materials18(5-8), 860–864 (2009).
[CrossRef]

A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. Hochedez, “193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett.92(5), 053501 (2008).
[CrossRef]

Benbakhti, B.

A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. Hochedez, “193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett.92(5), 053501 (2008).
[CrossRef]

BenMoussa, A.

A. BenMoussa, A. Soltani, U. Schühle, K. Haenen, Y. M. Chong, W. J. Zhang, R. Dahal, J. Y. Lin, H. X. Jiang, H. A. Barkad, B. BenMoussa, D. Bolsee, C. Hermans, U. Kroth, C. Laubis, V. Mortet, J. C. De Jaeger, B. Giordanengo, M. Richter, F. Scholze, and J. F. Hochedez, “Recent developments of wide-bandgap semiconductor based UV sensors,” Diamond Related Materials18(5-8), 860–864 (2009).
[CrossRef]

A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. Hochedez, “193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett.92(5), 053501 (2008).
[CrossRef]

BenMoussa, B.

A. BenMoussa, A. Soltani, U. Schühle, K. Haenen, Y. M. Chong, W. J. Zhang, R. Dahal, J. Y. Lin, H. X. Jiang, H. A. Barkad, B. BenMoussa, D. Bolsee, C. Hermans, U. Kroth, C. Laubis, V. Mortet, J. C. De Jaeger, B. Giordanengo, M. Richter, F. Scholze, and J. F. Hochedez, “Recent developments of wide-bandgap semiconductor based UV sensors,” Diamond Related Materials18(5-8), 860–864 (2009).
[CrossRef]

Biyikli, N.

T. Tut, N. Biyikli, I. Kimukin, T. Kartaloglu, O. Aytur, M. S. Unlu, and E. Ozbay, “High bandwidth-efficiency solar-blind AlGaN Schottky photodiodes with low dark current,” Solid-State Electron.49(1), 117–122 (2005).
[CrossRef]

Bolsee, D.

A. BenMoussa, A. Soltani, U. Schühle, K. Haenen, Y. M. Chong, W. J. Zhang, R. Dahal, J. Y. Lin, H. X. Jiang, H. A. Barkad, B. BenMoussa, D. Bolsee, C. Hermans, U. Kroth, C. Laubis, V. Mortet, J. C. De Jaeger, B. Giordanengo, M. Richter, F. Scholze, and J. F. Hochedez, “Recent developments of wide-bandgap semiconductor based UV sensors,” Diamond Related Materials18(5-8), 860–864 (2009).
[CrossRef]

Borisov, B. A.

V. V. Kuryatkov, B. A. Borisov, S. A. Nikishin, Yu. Kudryavtsev, R. Asomoza, V. I. Kuchinskii, G. S. Sokolovskii, D. Y. Song, and M. Holtz, “247 nm solar-blind ultraviolet p-i-n photodetector,” J. Appl. Phys.100(9), 096104 (2006).
[CrossRef]

Botelho do Rego, A. M.

V. Musat, E. Fortunato, S. Petrescu, and A. M. Botelho do Rego, “ZnO/SiO2 nanocomposite thin films by sol–gel method,” Phys. Status Solidi., A Appl. Mater. Sci.205(8), 2075–2079 (2008).
[CrossRef]

Boutwell, R. C.

J. W. Mares, R. C. Boutwell, M. Wei, A. Scheurer, and W. V. Schoenfeld, “Deep-ultraviolet photodetectors from epitaxially grown NixMg1−xO,” Appl. Phys. Lett.97(16), 161113 (2010).
[CrossRef]

Buchal, C.

H. Amekura, K. Kono, N. Kishimoto, and C. Buchal, “Formation of zinc-oxide nanoparticles in SiO2 by ion implantation combined with thermal oxidation,” Nucl. Instrum. Methods Phys. Res. B91, 96–99 (2007).

Chakrabarti, S.

S. Chakrabarti, D. Ganguli, and S. Chaudhuri, “Photoluminescence of ZnO nanocrystallites confined in sol–gel silica matrix,” J. Phys. D Appl. Phys.36(2), 146–151 (2003).
[CrossRef]

Chang, H. M.

C. Y. Lu, S. P. Chang, S. J. Chang, Y. Z. Chiou, C. F. Kuo, H. M. Chang, C. L. Hsu, and I. C. Chen, “Noise characteristics of ZnO-nanowire photodetectors prepared on ZnO:Ga/glass templates,” IEEE Sens. J.7(7), 1020–11024 (2007).
[CrossRef]

Chang, P. C.

K. H. Lee, R. W. Chuang, P. C. Chang, S. J. Chang, Y. C. Wang, C. L. Yu, J. C. Lin, and S. L. Wu, “Nitride-based MSM photodetectors with a HEMT structure and a low-temperature AlGaN intermediate layer,” J. Electrochem. Soc. 155, 959–963 (20108).

Chang, S. J.

T. P. Chen, S. J. Young, S. J. Chang, C. H. Hsiao, and Y. J. Hsu, “Bending effects of ZnO nanorod metal-semiconductor-metal photodetectors on flexible polyimide substrate,” Nanoscale Res. Lett.7(1), 214 (2012).
[CrossRef] [PubMed]

C. Y. Lu, S. P. Chang, S. J. Chang, Y. Z. Chiou, C. F. Kuo, H. M. Chang, C. L. Hsu, and I. C. Chen, “Noise characteristics of ZnO-nanowire photodetectors prepared on ZnO:Ga/glass templates,” IEEE Sens. J.7(7), 1020–11024 (2007).
[CrossRef]

S. J. Young, L. W. Ji, S. J. Chang, and X. L. Du, “ZnO metal-semiconductor-metal ultraviolet photodiodes with Au contacts,” J. Electrochem. Soc.154(1), H26–H29 (2007).
[CrossRef]

S. J. Young, L. W. Ji, S. J. Chang, and Y. K. Su, “ZnO metal–semiconductor–metal ultraviolet sensors with various contact electrodes,” J. Cryst. Growth293(1), 43–47 (2006).
[CrossRef]

K. H. Lee, R. W. Chuang, P. C. Chang, S. J. Chang, Y. C. Wang, C. L. Yu, J. C. Lin, and S. L. Wu, “Nitride-based MSM photodetectors with a HEMT structure and a low-temperature AlGaN intermediate layer,” J. Electrochem. Soc. 155, 959–963 (20108).

Chang, S. P.

C. Y. Lu, S. P. Chang, S. J. Chang, Y. Z. Chiou, C. F. Kuo, H. M. Chang, C. L. Hsu, and I. C. Chen, “Noise characteristics of ZnO-nanowire photodetectors prepared on ZnO:Ga/glass templates,” IEEE Sens. J.7(7), 1020–11024 (2007).
[CrossRef]

Chaudhuri, S.

S. Chakrabarti, D. Ganguli, and S. Chaudhuri, “Photoluminescence of ZnO nanocrystallites confined in sol–gel silica matrix,” J. Phys. D Appl. Phys.36(2), 146–151 (2003).
[CrossRef]

Chen, I. C.

C. Y. Lu, S. P. Chang, S. J. Chang, Y. Z. Chiou, C. F. Kuo, H. M. Chang, C. L. Hsu, and I. C. Chen, “Noise characteristics of ZnO-nanowire photodetectors prepared on ZnO:Ga/glass templates,” IEEE Sens. J.7(7), 1020–11024 (2007).
[CrossRef]

Chen, T. P.

T. P. Chen, S. J. Young, S. J. Chang, C. H. Hsiao, and Y. J. Hsu, “Bending effects of ZnO nanorod metal-semiconductor-metal photodetectors on flexible polyimide substrate,” Nanoscale Res. Lett.7(1), 214 (2012).
[CrossRef] [PubMed]

Chen, Y. F.

C. Y. Lee, M. Y. Lin, W. H. Wu, J. Y. Wang, Y. Chou, W. F. Su, Y. F. Chen, and C. F. Lin, “Flexible ZnO transparent thin-film transistors by a solution-based process at various solution concentrations,” Semicond. Sci. Technol.25(10), 105008 (2010).
[CrossRef]

Chiou, Y. Z.

C. Y. Lu, S. P. Chang, S. J. Chang, Y. Z. Chiou, C. F. Kuo, H. M. Chang, C. L. Hsu, and I. C. Chen, “Noise characteristics of ZnO-nanowire photodetectors prepared on ZnO:Ga/glass templates,” IEEE Sens. J.7(7), 1020–11024 (2007).
[CrossRef]

Cho, S. J.

U. Ozgur, Ya. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doğan, V. Avrutin, S. J. Cho, and H. Morkoç, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys.98(4), 041301 (2005).
[CrossRef]

Chong, Y. M.

A. BenMoussa, A. Soltani, U. Schühle, K. Haenen, Y. M. Chong, W. J. Zhang, R. Dahal, J. Y. Lin, H. X. Jiang, H. A. Barkad, B. BenMoussa, D. Bolsee, C. Hermans, U. Kroth, C. Laubis, V. Mortet, J. C. De Jaeger, B. Giordanengo, M. Richter, F. Scholze, and J. F. Hochedez, “Recent developments of wide-bandgap semiconductor based UV sensors,” Diamond Related Materials18(5-8), 860–864 (2009).
[CrossRef]

A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. Hochedez, “193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett.92(5), 053501 (2008).
[CrossRef]

Chou, Y.

C. Y. Lee, M. Y. Lin, W. H. Wu, J. Y. Wang, Y. Chou, W. F. Su, Y. F. Chen, and C. F. Lin, “Flexible ZnO transparent thin-film transistors by a solution-based process at various solution concentrations,” Semicond. Sci. Technol.25(10), 105008 (2010).
[CrossRef]

Chuang, R. W.

K. H. Lee, R. W. Chuang, P. C. Chang, S. J. Chang, Y. C. Wang, C. L. Yu, J. C. Lin, and S. L. Wu, “Nitride-based MSM photodetectors with a HEMT structure and a low-temperature AlGaN intermediate layer,” J. Electrochem. Soc. 155, 959–963 (20108).

Dahal, R.

A. BenMoussa, A. Soltani, U. Schühle, K. Haenen, Y. M. Chong, W. J. Zhang, R. Dahal, J. Y. Lin, H. X. Jiang, H. A. Barkad, B. BenMoussa, D. Bolsee, C. Hermans, U. Kroth, C. Laubis, V. Mortet, J. C. De Jaeger, B. Giordanengo, M. Richter, F. Scholze, and J. F. Hochedez, “Recent developments of wide-bandgap semiconductor based UV sensors,” Diamond Related Materials18(5-8), 860–864 (2009).
[CrossRef]

De Jaeger, J. C.

A. BenMoussa, A. Soltani, U. Schühle, K. Haenen, Y. M. Chong, W. J. Zhang, R. Dahal, J. Y. Lin, H. X. Jiang, H. A. Barkad, B. BenMoussa, D. Bolsee, C. Hermans, U. Kroth, C. Laubis, V. Mortet, J. C. De Jaeger, B. Giordanengo, M. Richter, F. Scholze, and J. F. Hochedez, “Recent developments of wide-bandgap semiconductor based UV sensors,” Diamond Related Materials18(5-8), 860–864 (2009).
[CrossRef]

A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. Hochedez, “193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett.92(5), 053501 (2008).
[CrossRef]

Dogan, S.

U. Ozgur, Ya. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doğan, V. Avrutin, S. J. Cho, and H. Morkoç, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys.98(4), 041301 (2005).
[CrossRef]

Du, X. L.

Y. N. Hou, Z. X. Mei, Z. L. Liu, T. C. Zhang, and X. L. Du, “Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain,” Appl. Phys. Lett.98(10), 103506 (2011).
[CrossRef]

S. J. Young, L. W. Ji, S. J. Chang, and X. L. Du, “ZnO metal-semiconductor-metal ultraviolet photodiodes with Au contacts,” J. Electrochem. Soc.154(1), H26–H29 (2007).
[CrossRef]

Egawa, T.

H. Jiang and T. Egawa, “High quality AlGaN solar-blind Schottky photodiodes fabricated on AIN/sapphire template,” Appl. Phys. Lett.90(12), 121121 (2007).
[CrossRef]

Fjellvåg, H.

S. Zh. Karazhanov, P. Ravindran, H. Fjellvåg, and B. G. Svensson, “Electronic structure and optical properties of ZnSiO3 and Zn2SiO4,” J. Appl. Phys.106(12), 123701 (2009).
[CrossRef]

Fortunato, E.

V. Musat, E. Fortunato, S. Petrescu, and A. M. Botelho do Rego, “ZnO/SiO2 nanocomposite thin films by sol–gel method,” Phys. Status Solidi., A Appl. Mater. Sci.205(8), 2075–2079 (2008).
[CrossRef]

Ganguli, D.

S. Chakrabarti, D. Ganguli, and S. Chaudhuri, “Photoluminescence of ZnO nanocrystallites confined in sol–gel silica matrix,” J. Phys. D Appl. Phys.36(2), 146–151 (2003).
[CrossRef]

Giordanengo, B.

A. BenMoussa, A. Soltani, U. Schühle, K. Haenen, Y. M. Chong, W. J. Zhang, R. Dahal, J. Y. Lin, H. X. Jiang, H. A. Barkad, B. BenMoussa, D. Bolsee, C. Hermans, U. Kroth, C. Laubis, V. Mortet, J. C. De Jaeger, B. Giordanengo, M. Richter, F. Scholze, and J. F. Hochedez, “Recent developments of wide-bandgap semiconductor based UV sensors,” Diamond Related Materials18(5-8), 860–864 (2009).
[CrossRef]

A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. Hochedez, “193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett.92(5), 053501 (2008).
[CrossRef]

Gokkavas, M.

T. Tut, M. Gokkavas, A. Inal, and E. Ozbay, “AlxGa1−xN-based avalanche photodiodes with high reproducible avalanche gain,” Appl. Phys. Lett.90(16), 163506 (2007).
[CrossRef]

Golberg, D.

C. Li, Y. Bando, M. Liao, Y. Koide, and D. Golberg, “Visible-blind deep-ultraviolet Schottky photodetector with a photocurrent gain based on individual Zn2GeO4 nanowire,” Appl. Phys. Lett.97(16), 161102 (2010).
[CrossRef]

Haenen, K.

A. BenMoussa, A. Soltani, U. Schühle, K. Haenen, Y. M. Chong, W. J. Zhang, R. Dahal, J. Y. Lin, H. X. Jiang, H. A. Barkad, B. BenMoussa, D. Bolsee, C. Hermans, U. Kroth, C. Laubis, V. Mortet, J. C. De Jaeger, B. Giordanengo, M. Richter, F. Scholze, and J. F. Hochedez, “Recent developments of wide-bandgap semiconductor based UV sensors,” Diamond Related Materials18(5-8), 860–864 (2009).
[CrossRef]

Hermans, C.

A. BenMoussa, A. Soltani, U. Schühle, K. Haenen, Y. M. Chong, W. J. Zhang, R. Dahal, J. Y. Lin, H. X. Jiang, H. A. Barkad, B. BenMoussa, D. Bolsee, C. Hermans, U. Kroth, C. Laubis, V. Mortet, J. C. De Jaeger, B. Giordanengo, M. Richter, F. Scholze, and J. F. Hochedez, “Recent developments of wide-bandgap semiconductor based UV sensors,” Diamond Related Materials18(5-8), 860–864 (2009).
[CrossRef]

Hochedez, J.

A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. Hochedez, “193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett.92(5), 053501 (2008).
[CrossRef]

Hochedez, J. F.

A. BenMoussa, A. Soltani, U. Schühle, K. Haenen, Y. M. Chong, W. J. Zhang, R. Dahal, J. Y. Lin, H. X. Jiang, H. A. Barkad, B. BenMoussa, D. Bolsee, C. Hermans, U. Kroth, C. Laubis, V. Mortet, J. C. De Jaeger, B. Giordanengo, M. Richter, F. Scholze, and J. F. Hochedez, “Recent developments of wide-bandgap semiconductor based UV sensors,” Diamond Related Materials18(5-8), 860–864 (2009).
[CrossRef]

Holtz, M.

V. V. Kuryatkov, B. A. Borisov, S. A. Nikishin, Yu. Kudryavtsev, R. Asomoza, V. I. Kuchinskii, G. S. Sokolovskii, D. Y. Song, and M. Holtz, “247 nm solar-blind ultraviolet p-i-n photodetector,” J. Appl. Phys.100(9), 096104 (2006).
[CrossRef]

Hou, Y. N.

Y. N. Hou, Z. X. Mei, Z. L. Liu, T. C. Zhang, and X. L. Du, “Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain,” Appl. Phys. Lett.98(10), 103506 (2011).
[CrossRef]

Hsiao, C. H.

T. P. Chen, S. J. Young, S. J. Chang, C. H. Hsiao, and Y. J. Hsu, “Bending effects of ZnO nanorod metal-semiconductor-metal photodetectors on flexible polyimide substrate,” Nanoscale Res. Lett.7(1), 214 (2012).
[CrossRef] [PubMed]

Hsu, C. L.

C. Y. Lu, S. P. Chang, S. J. Chang, Y. Z. Chiou, C. F. Kuo, H. M. Chang, C. L. Hsu, and I. C. Chen, “Noise characteristics of ZnO-nanowire photodetectors prepared on ZnO:Ga/glass templates,” IEEE Sens. J.7(7), 1020–11024 (2007).
[CrossRef]

Hsu, Y. J.

T. P. Chen, S. J. Young, S. J. Chang, C. H. Hsiao, and Y. J. Hsu, “Bending effects of ZnO nanorod metal-semiconductor-metal photodetectors on flexible polyimide substrate,” Nanoscale Res. Lett.7(1), 214 (2012).
[CrossRef] [PubMed]

Inal, A.

T. Tut, M. Gokkavas, A. Inal, and E. Ozbay, “AlxGa1−xN-based avalanche photodiodes with high reproducible avalanche gain,” Appl. Phys. Lett.90(16), 163506 (2007).
[CrossRef]

Ji, L. W.

L. W. Ji, C. Z. Wu, C. M. Lin, T. H. Meen, K. T. Lam, S. M. Peng, S. J. Young, and C. H. Liu, “Characteristic improvements of ZnO-based metal–semiconductor–metal photodetector on flexible substrate with ZnO cap layer,” Jpn. J. Appl. Phys.49(5), 052201 (2010).
[CrossRef]

S. J. Young, L. W. Ji, S. J. Chang, and X. L. Du, “ZnO metal-semiconductor-metal ultraviolet photodiodes with Au contacts,” J. Electrochem. Soc.154(1), H26–H29 (2007).
[CrossRef]

S. J. Young, L. W. Ji, S. J. Chang, and Y. K. Su, “ZnO metal–semiconductor–metal ultraviolet sensors with various contact electrodes,” J. Cryst. Growth293(1), 43–47 (2006).
[CrossRef]

Jiang, H.

H. Jiang and T. Egawa, “High quality AlGaN solar-blind Schottky photodiodes fabricated on AIN/sapphire template,” Appl. Phys. Lett.90(12), 121121 (2007).
[CrossRef]

Jiang, H. X.

A. BenMoussa, A. Soltani, U. Schühle, K. Haenen, Y. M. Chong, W. J. Zhang, R. Dahal, J. Y. Lin, H. X. Jiang, H. A. Barkad, B. BenMoussa, D. Bolsee, C. Hermans, U. Kroth, C. Laubis, V. Mortet, J. C. De Jaeger, B. Giordanengo, M. Richter, F. Scholze, and J. F. Hochedez, “Recent developments of wide-bandgap semiconductor based UV sensors,” Diamond Related Materials18(5-8), 860–864 (2009).
[CrossRef]

Karazhanov, S. Zh.

S. Zh. Karazhanov, P. Ravindran, H. Fjellvåg, and B. G. Svensson, “Electronic structure and optical properties of ZnSiO3 and Zn2SiO4,” J. Appl. Phys.106(12), 123701 (2009).
[CrossRef]

Kartaloglu, T.

T. Tut, N. Biyikli, I. Kimukin, T. Kartaloglu, O. Aytur, M. S. Unlu, and E. Ozbay, “High bandwidth-efficiency solar-blind AlGaN Schottky photodiodes with low dark current,” Solid-State Electron.49(1), 117–122 (2005).
[CrossRef]

Kimukin, I.

T. Tut, N. Biyikli, I. Kimukin, T. Kartaloglu, O. Aytur, M. S. Unlu, and E. Ozbay, “High bandwidth-efficiency solar-blind AlGaN Schottky photodiodes with low dark current,” Solid-State Electron.49(1), 117–122 (2005).
[CrossRef]

Kishimoto, N.

H. Amekura, K. Kono, N. Kishimoto, and C. Buchal, “Formation of zinc-oxide nanoparticles in SiO2 by ion implantation combined with thermal oxidation,” Nucl. Instrum. Methods Phys. Res. B91, 96–99 (2007).

Koide, Y.

C. Li, Y. Bando, M. Liao, Y. Koide, and D. Golberg, “Visible-blind deep-ultraviolet Schottky photodetector with a photocurrent gain based on individual Zn2GeO4 nanowire,” Appl. Phys. Lett.97(16), 161102 (2010).
[CrossRef]

Kono, K.

H. Amekura, K. Kono, N. Kishimoto, and C. Buchal, “Formation of zinc-oxide nanoparticles in SiO2 by ion implantation combined with thermal oxidation,” Nucl. Instrum. Methods Phys. Res. B91, 96–99 (2007).

Kroth, U.

A. BenMoussa, A. Soltani, U. Schühle, K. Haenen, Y. M. Chong, W. J. Zhang, R. Dahal, J. Y. Lin, H. X. Jiang, H. A. Barkad, B. BenMoussa, D. Bolsee, C. Hermans, U. Kroth, C. Laubis, V. Mortet, J. C. De Jaeger, B. Giordanengo, M. Richter, F. Scholze, and J. F. Hochedez, “Recent developments of wide-bandgap semiconductor based UV sensors,” Diamond Related Materials18(5-8), 860–864 (2009).
[CrossRef]

Kuchinskii, V. I.

V. V. Kuryatkov, B. A. Borisov, S. A. Nikishin, Yu. Kudryavtsev, R. Asomoza, V. I. Kuchinskii, G. S. Sokolovskii, D. Y. Song, and M. Holtz, “247 nm solar-blind ultraviolet p-i-n photodetector,” J. Appl. Phys.100(9), 096104 (2006).
[CrossRef]

Kudryavtsev, Yu.

V. V. Kuryatkov, B. A. Borisov, S. A. Nikishin, Yu. Kudryavtsev, R. Asomoza, V. I. Kuchinskii, G. S. Sokolovskii, D. Y. Song, and M. Holtz, “247 nm solar-blind ultraviolet p-i-n photodetector,” J. Appl. Phys.100(9), 096104 (2006).
[CrossRef]

Kuo, C. F.

C. Y. Lu, S. P. Chang, S. J. Chang, Y. Z. Chiou, C. F. Kuo, H. M. Chang, C. L. Hsu, and I. C. Chen, “Noise characteristics of ZnO-nanowire photodetectors prepared on ZnO:Ga/glass templates,” IEEE Sens. J.7(7), 1020–11024 (2007).
[CrossRef]

Kuryatkov, V. V.

V. V. Kuryatkov, B. A. Borisov, S. A. Nikishin, Yu. Kudryavtsev, R. Asomoza, V. I. Kuchinskii, G. S. Sokolovskii, D. Y. Song, and M. Holtz, “247 nm solar-blind ultraviolet p-i-n photodetector,” J. Appl. Phys.100(9), 096104 (2006).
[CrossRef]

Lam, K. T.

L. W. Ji, C. Z. Wu, C. M. Lin, T. H. Meen, K. T. Lam, S. M. Peng, S. J. Young, and C. H. Liu, “Characteristic improvements of ZnO-based metal–semiconductor–metal photodetector on flexible substrate with ZnO cap layer,” Jpn. J. Appl. Phys.49(5), 052201 (2010).
[CrossRef]

Laubis, C.

A. BenMoussa, A. Soltani, U. Schühle, K. Haenen, Y. M. Chong, W. J. Zhang, R. Dahal, J. Y. Lin, H. X. Jiang, H. A. Barkad, B. BenMoussa, D. Bolsee, C. Hermans, U. Kroth, C. Laubis, V. Mortet, J. C. De Jaeger, B. Giordanengo, M. Richter, F. Scholze, and J. F. Hochedez, “Recent developments of wide-bandgap semiconductor based UV sensors,” Diamond Related Materials18(5-8), 860–864 (2009).
[CrossRef]

Lee, C. Y.

C. Y. Lee, M. Y. Lin, W. H. Wu, J. Y. Wang, Y. Chou, W. F. Su, Y. F. Chen, and C. F. Lin, “Flexible ZnO transparent thin-film transistors by a solution-based process at various solution concentrations,” Semicond. Sci. Technol.25(10), 105008 (2010).
[CrossRef]

Lee, K. H.

K. H. Lee, R. W. Chuang, P. C. Chang, S. J. Chang, Y. C. Wang, C. L. Yu, J. C. Lin, and S. L. Wu, “Nitride-based MSM photodetectors with a HEMT structure and a low-temperature AlGaN intermediate layer,” J. Electrochem. Soc. 155, 959–963 (20108).

Lee, S. T.

A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. Hochedez, “193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett.92(5), 053501 (2008).
[CrossRef]

Li, C.

C. Li, Y. Bando, M. Liao, Y. Koide, and D. Golberg, “Visible-blind deep-ultraviolet Schottky photodetector with a photocurrent gain based on individual Zn2GeO4 nanowire,” Appl. Phys. Lett.97(16), 161102 (2010).
[CrossRef]

Liao, M.

C. Li, Y. Bando, M. Liao, Y. Koide, and D. Golberg, “Visible-blind deep-ultraviolet Schottky photodetector with a photocurrent gain based on individual Zn2GeO4 nanowire,” Appl. Phys. Lett.97(16), 161102 (2010).
[CrossRef]

Lin, C. F.

C. Y. Lee, M. Y. Lin, W. H. Wu, J. Y. Wang, Y. Chou, W. F. Su, Y. F. Chen, and C. F. Lin, “Flexible ZnO transparent thin-film transistors by a solution-based process at various solution concentrations,” Semicond. Sci. Technol.25(10), 105008 (2010).
[CrossRef]

Lin, C. M.

L. W. Ji, C. Z. Wu, C. M. Lin, T. H. Meen, K. T. Lam, S. M. Peng, S. J. Young, and C. H. Liu, “Characteristic improvements of ZnO-based metal–semiconductor–metal photodetector on flexible substrate with ZnO cap layer,” Jpn. J. Appl. Phys.49(5), 052201 (2010).
[CrossRef]

Lin, J. C.

K. H. Lee, R. W. Chuang, P. C. Chang, S. J. Chang, Y. C. Wang, C. L. Yu, J. C. Lin, and S. L. Wu, “Nitride-based MSM photodetectors with a HEMT structure and a low-temperature AlGaN intermediate layer,” J. Electrochem. Soc. 155, 959–963 (20108).

Lin, J. Y.

A. BenMoussa, A. Soltani, U. Schühle, K. Haenen, Y. M. Chong, W. J. Zhang, R. Dahal, J. Y. Lin, H. X. Jiang, H. A. Barkad, B. BenMoussa, D. Bolsee, C. Hermans, U. Kroth, C. Laubis, V. Mortet, J. C. De Jaeger, B. Giordanengo, M. Richter, F. Scholze, and J. F. Hochedez, “Recent developments of wide-bandgap semiconductor based UV sensors,” Diamond Related Materials18(5-8), 860–864 (2009).
[CrossRef]

Lin, M. Y.

C. Y. Lee, M. Y. Lin, W. H. Wu, J. Y. Wang, Y. Chou, W. F. Su, Y. F. Chen, and C. F. Lin, “Flexible ZnO transparent thin-film transistors by a solution-based process at various solution concentrations,” Semicond. Sci. Technol.25(10), 105008 (2010).
[CrossRef]

Liu, C.

U. Ozgur, Ya. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doğan, V. Avrutin, S. J. Cho, and H. Morkoç, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys.98(4), 041301 (2005).
[CrossRef]

Liu, C. H.

L. W. Ji, C. Z. Wu, C. M. Lin, T. H. Meen, K. T. Lam, S. M. Peng, S. J. Young, and C. H. Liu, “Characteristic improvements of ZnO-based metal–semiconductor–metal photodetector on flexible substrate with ZnO cap layer,” Jpn. J. Appl. Phys.49(5), 052201 (2010).
[CrossRef]

Liu, Z. G.

W. F. Yang, F. Zhang, Z. G. Liu, and Z. G. Wu, “Effects of annealing on the performance of 4H-SiC metal–semiconductor–metal ultraviolet photodetectors,” Mater. Sci. Semicond. Process.11(2), 59–62 (2008).
[CrossRef]

Liu, Z. L.

Y. N. Hou, Z. X. Mei, Z. L. Liu, T. C. Zhang, and X. L. Du, “Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain,” Appl. Phys. Lett.98(10), 103506 (2011).
[CrossRef]

Lu, C. Y.

C. Y. Lu, S. P. Chang, S. J. Chang, Y. Z. Chiou, C. F. Kuo, H. M. Chang, C. L. Hsu, and I. C. Chen, “Noise characteristics of ZnO-nanowire photodetectors prepared on ZnO:Ga/glass templates,” IEEE Sens. J.7(7), 1020–11024 (2007).
[CrossRef]

Mares, J. W.

J. W. Mares, R. C. Boutwell, M. Wei, A. Scheurer, and W. V. Schoenfeld, “Deep-ultraviolet photodetectors from epitaxially grown NixMg1−xO,” Appl. Phys. Lett.97(16), 161113 (2010).
[CrossRef]

Mattalah, M.

A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. Hochedez, “193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett.92(5), 053501 (2008).
[CrossRef]

Meen, T. H.

L. W. Ji, C. Z. Wu, C. M. Lin, T. H. Meen, K. T. Lam, S. M. Peng, S. J. Young, and C. H. Liu, “Characteristic improvements of ZnO-based metal–semiconductor–metal photodetector on flexible substrate with ZnO cap layer,” Jpn. J. Appl. Phys.49(5), 052201 (2010).
[CrossRef]

Mei, Z. X.

Y. N. Hou, Z. X. Mei, Z. L. Liu, T. C. Zhang, and X. L. Du, “Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain,” Appl. Phys. Lett.98(10), 103506 (2011).
[CrossRef]

Morkoç, H.

U. Ozgur, Ya. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doğan, V. Avrutin, S. J. Cho, and H. Morkoç, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys.98(4), 041301 (2005).
[CrossRef]

Mortet, V.

A. BenMoussa, A. Soltani, U. Schühle, K. Haenen, Y. M. Chong, W. J. Zhang, R. Dahal, J. Y. Lin, H. X. Jiang, H. A. Barkad, B. BenMoussa, D. Bolsee, C. Hermans, U. Kroth, C. Laubis, V. Mortet, J. C. De Jaeger, B. Giordanengo, M. Richter, F. Scholze, and J. F. Hochedez, “Recent developments of wide-bandgap semiconductor based UV sensors,” Diamond Related Materials18(5-8), 860–864 (2009).
[CrossRef]

Musat, V.

V. Musat, E. Fortunato, S. Petrescu, and A. M. Botelho do Rego, “ZnO/SiO2 nanocomposite thin films by sol–gel method,” Phys. Status Solidi., A Appl. Mater. Sci.205(8), 2075–2079 (2008).
[CrossRef]

Nikishin, S. A.

V. V. Kuryatkov, B. A. Borisov, S. A. Nikishin, Yu. Kudryavtsev, R. Asomoza, V. I. Kuchinskii, G. S. Sokolovskii, D. Y. Song, and M. Holtz, “247 nm solar-blind ultraviolet p-i-n photodetector,” J. Appl. Phys.100(9), 096104 (2006).
[CrossRef]

Ozbay, E.

T. Tut, M. Gokkavas, A. Inal, and E. Ozbay, “AlxGa1−xN-based avalanche photodiodes with high reproducible avalanche gain,” Appl. Phys. Lett.90(16), 163506 (2007).
[CrossRef]

T. Tut, N. Biyikli, I. Kimukin, T. Kartaloglu, O. Aytur, M. S. Unlu, and E. Ozbay, “High bandwidth-efficiency solar-blind AlGaN Schottky photodiodes with low dark current,” Solid-State Electron.49(1), 117–122 (2005).
[CrossRef]

Ozgur, U.

U. Ozgur, Ya. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doğan, V. Avrutin, S. J. Cho, and H. Morkoç, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys.98(4), 041301 (2005).
[CrossRef]

Peng, S. M.

L. W. Ji, C. Z. Wu, C. M. Lin, T. H. Meen, K. T. Lam, S. M. Peng, S. J. Young, and C. H. Liu, “Characteristic improvements of ZnO-based metal–semiconductor–metal photodetector on flexible substrate with ZnO cap layer,” Jpn. J. Appl. Phys.49(5), 052201 (2010).
[CrossRef]

Petrescu, S.

V. Musat, E. Fortunato, S. Petrescu, and A. M. Botelho do Rego, “ZnO/SiO2 nanocomposite thin films by sol–gel method,” Phys. Status Solidi., A Appl. Mater. Sci.205(8), 2075–2079 (2008).
[CrossRef]

Ravindran, P.

S. Zh. Karazhanov, P. Ravindran, H. Fjellvåg, and B. G. Svensson, “Electronic structure and optical properties of ZnSiO3 and Zn2SiO4,” J. Appl. Phys.106(12), 123701 (2009).
[CrossRef]

Reshchikov, M. A.

U. Ozgur, Ya. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doğan, V. Avrutin, S. J. Cho, and H. Morkoç, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys.98(4), 041301 (2005).
[CrossRef]

Richter, M.

A. BenMoussa, A. Soltani, U. Schühle, K. Haenen, Y. M. Chong, W. J. Zhang, R. Dahal, J. Y. Lin, H. X. Jiang, H. A. Barkad, B. BenMoussa, D. Bolsee, C. Hermans, U. Kroth, C. Laubis, V. Mortet, J. C. De Jaeger, B. Giordanengo, M. Richter, F. Scholze, and J. F. Hochedez, “Recent developments of wide-bandgap semiconductor based UV sensors,” Diamond Related Materials18(5-8), 860–864 (2009).
[CrossRef]

Scheurer, A.

J. W. Mares, R. C. Boutwell, M. Wei, A. Scheurer, and W. V. Schoenfeld, “Deep-ultraviolet photodetectors from epitaxially grown NixMg1−xO,” Appl. Phys. Lett.97(16), 161113 (2010).
[CrossRef]

Schoenfeld, W. V.

J. W. Mares, R. C. Boutwell, M. Wei, A. Scheurer, and W. V. Schoenfeld, “Deep-ultraviolet photodetectors from epitaxially grown NixMg1−xO,” Appl. Phys. Lett.97(16), 161113 (2010).
[CrossRef]

Scholze, F.

A. BenMoussa, A. Soltani, U. Schühle, K. Haenen, Y. M. Chong, W. J. Zhang, R. Dahal, J. Y. Lin, H. X. Jiang, H. A. Barkad, B. BenMoussa, D. Bolsee, C. Hermans, U. Kroth, C. Laubis, V. Mortet, J. C. De Jaeger, B. Giordanengo, M. Richter, F. Scholze, and J. F. Hochedez, “Recent developments of wide-bandgap semiconductor based UV sensors,” Diamond Related Materials18(5-8), 860–864 (2009).
[CrossRef]

Schühle, U.

A. BenMoussa, A. Soltani, U. Schühle, K. Haenen, Y. M. Chong, W. J. Zhang, R. Dahal, J. Y. Lin, H. X. Jiang, H. A. Barkad, B. BenMoussa, D. Bolsee, C. Hermans, U. Kroth, C. Laubis, V. Mortet, J. C. De Jaeger, B. Giordanengo, M. Richter, F. Scholze, and J. F. Hochedez, “Recent developments of wide-bandgap semiconductor based UV sensors,” Diamond Related Materials18(5-8), 860–864 (2009).
[CrossRef]

Sokolovskii, G. S.

V. V. Kuryatkov, B. A. Borisov, S. A. Nikishin, Yu. Kudryavtsev, R. Asomoza, V. I. Kuchinskii, G. S. Sokolovskii, D. Y. Song, and M. Holtz, “247 nm solar-blind ultraviolet p-i-n photodetector,” J. Appl. Phys.100(9), 096104 (2006).
[CrossRef]

Soltani, A.

A. BenMoussa, A. Soltani, U. Schühle, K. Haenen, Y. M. Chong, W. J. Zhang, R. Dahal, J. Y. Lin, H. X. Jiang, H. A. Barkad, B. BenMoussa, D. Bolsee, C. Hermans, U. Kroth, C. Laubis, V. Mortet, J. C. De Jaeger, B. Giordanengo, M. Richter, F. Scholze, and J. F. Hochedez, “Recent developments of wide-bandgap semiconductor based UV sensors,” Diamond Related Materials18(5-8), 860–864 (2009).
[CrossRef]

A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. Hochedez, “193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett.92(5), 053501 (2008).
[CrossRef]

Song, D. Y.

V. V. Kuryatkov, B. A. Borisov, S. A. Nikishin, Yu. Kudryavtsev, R. Asomoza, V. I. Kuchinskii, G. S. Sokolovskii, D. Y. Song, and M. Holtz, “247 nm solar-blind ultraviolet p-i-n photodetector,” J. Appl. Phys.100(9), 096104 (2006).
[CrossRef]

Su, W. F.

C. Y. Lee, M. Y. Lin, W. H. Wu, J. Y. Wang, Y. Chou, W. F. Su, Y. F. Chen, and C. F. Lin, “Flexible ZnO transparent thin-film transistors by a solution-based process at various solution concentrations,” Semicond. Sci. Technol.25(10), 105008 (2010).
[CrossRef]

Su, Y. K.

S. J. Young, L. W. Ji, S. J. Chang, and Y. K. Su, “ZnO metal–semiconductor–metal ultraviolet sensors with various contact electrodes,” J. Cryst. Growth293(1), 43–47 (2006).
[CrossRef]

Svensson, B. G.

S. Zh. Karazhanov, P. Ravindran, H. Fjellvåg, and B. G. Svensson, “Electronic structure and optical properties of ZnSiO3 and Zn2SiO4,” J. Appl. Phys.106(12), 123701 (2009).
[CrossRef]

Teke, A.

U. Ozgur, Ya. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doğan, V. Avrutin, S. J. Cho, and H. Morkoç, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys.98(4), 041301 (2005).
[CrossRef]

Tut, T.

T. Tut, M. Gokkavas, A. Inal, and E. Ozbay, “AlxGa1−xN-based avalanche photodiodes with high reproducible avalanche gain,” Appl. Phys. Lett.90(16), 163506 (2007).
[CrossRef]

T. Tut, N. Biyikli, I. Kimukin, T. Kartaloglu, O. Aytur, M. S. Unlu, and E. Ozbay, “High bandwidth-efficiency solar-blind AlGaN Schottky photodiodes with low dark current,” Solid-State Electron.49(1), 117–122 (2005).
[CrossRef]

Unlu, M. S.

T. Tut, N. Biyikli, I. Kimukin, T. Kartaloglu, O. Aytur, M. S. Unlu, and E. Ozbay, “High bandwidth-efficiency solar-blind AlGaN Schottky photodiodes with low dark current,” Solid-State Electron.49(1), 117–122 (2005).
[CrossRef]

Wang, J. Y.

C. Y. Lee, M. Y. Lin, W. H. Wu, J. Y. Wang, Y. Chou, W. F. Su, Y. F. Chen, and C. F. Lin, “Flexible ZnO transparent thin-film transistors by a solution-based process at various solution concentrations,” Semicond. Sci. Technol.25(10), 105008 (2010).
[CrossRef]

Wang, Y. C.

K. H. Lee, R. W. Chuang, P. C. Chang, S. J. Chang, Y. C. Wang, C. L. Yu, J. C. Lin, and S. L. Wu, “Nitride-based MSM photodetectors with a HEMT structure and a low-temperature AlGaN intermediate layer,” J. Electrochem. Soc. 155, 959–963 (20108).

Wei, M.

J. W. Mares, R. C. Boutwell, M. Wei, A. Scheurer, and W. V. Schoenfeld, “Deep-ultraviolet photodetectors from epitaxially grown NixMg1−xO,” Appl. Phys. Lett.97(16), 161113 (2010).
[CrossRef]

Wu, C. Z.

L. W. Ji, C. Z. Wu, C. M. Lin, T. H. Meen, K. T. Lam, S. M. Peng, S. J. Young, and C. H. Liu, “Characteristic improvements of ZnO-based metal–semiconductor–metal photodetector on flexible substrate with ZnO cap layer,” Jpn. J. Appl. Phys.49(5), 052201 (2010).
[CrossRef]

Wu, S. L.

K. H. Lee, R. W. Chuang, P. C. Chang, S. J. Chang, Y. C. Wang, C. L. Yu, J. C. Lin, and S. L. Wu, “Nitride-based MSM photodetectors with a HEMT structure and a low-temperature AlGaN intermediate layer,” J. Electrochem. Soc. 155, 959–963 (20108).

Wu, W. H.

C. Y. Lee, M. Y. Lin, W. H. Wu, J. Y. Wang, Y. Chou, W. F. Su, Y. F. Chen, and C. F. Lin, “Flexible ZnO transparent thin-film transistors by a solution-based process at various solution concentrations,” Semicond. Sci. Technol.25(10), 105008 (2010).
[CrossRef]

Wu, Z. G.

W. F. Yang, F. Zhang, Z. G. Liu, and Z. G. Wu, “Effects of annealing on the performance of 4H-SiC metal–semiconductor–metal ultraviolet photodetectors,” Mater. Sci. Semicond. Process.11(2), 59–62 (2008).
[CrossRef]

Yang, W. F.

W. F. Yang, F. Zhang, Z. G. Liu, and Z. G. Wu, “Effects of annealing on the performance of 4H-SiC metal–semiconductor–metal ultraviolet photodetectors,” Mater. Sci. Semicond. Process.11(2), 59–62 (2008).
[CrossRef]

Young, S. J.

T. P. Chen, S. J. Young, S. J. Chang, C. H. Hsiao, and Y. J. Hsu, “Bending effects of ZnO nanorod metal-semiconductor-metal photodetectors on flexible polyimide substrate,” Nanoscale Res. Lett.7(1), 214 (2012).
[CrossRef] [PubMed]

L. W. Ji, C. Z. Wu, C. M. Lin, T. H. Meen, K. T. Lam, S. M. Peng, S. J. Young, and C. H. Liu, “Characteristic improvements of ZnO-based metal–semiconductor–metal photodetector on flexible substrate with ZnO cap layer,” Jpn. J. Appl. Phys.49(5), 052201 (2010).
[CrossRef]

S. J. Young, L. W. Ji, S. J. Chang, and X. L. Du, “ZnO metal-semiconductor-metal ultraviolet photodiodes with Au contacts,” J. Electrochem. Soc.154(1), H26–H29 (2007).
[CrossRef]

S. J. Young, L. W. Ji, S. J. Chang, and Y. K. Su, “ZnO metal–semiconductor–metal ultraviolet sensors with various contact electrodes,” J. Cryst. Growth293(1), 43–47 (2006).
[CrossRef]

Yu, C. L.

K. H. Lee, R. W. Chuang, P. C. Chang, S. J. Chang, Y. C. Wang, C. L. Yu, J. C. Lin, and S. L. Wu, “Nitride-based MSM photodetectors with a HEMT structure and a low-temperature AlGaN intermediate layer,” J. Electrochem. Soc. 155, 959–963 (20108).

Zhang, F.

W. F. Yang, F. Zhang, Z. G. Liu, and Z. G. Wu, “Effects of annealing on the performance of 4H-SiC metal–semiconductor–metal ultraviolet photodetectors,” Mater. Sci. Semicond. Process.11(2), 59–62 (2008).
[CrossRef]

Zhang, T. C.

Y. N. Hou, Z. X. Mei, Z. L. Liu, T. C. Zhang, and X. L. Du, “Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain,” Appl. Phys. Lett.98(10), 103506 (2011).
[CrossRef]

Zhang, W. J.

A. BenMoussa, A. Soltani, U. Schühle, K. Haenen, Y. M. Chong, W. J. Zhang, R. Dahal, J. Y. Lin, H. X. Jiang, H. A. Barkad, B. BenMoussa, D. Bolsee, C. Hermans, U. Kroth, C. Laubis, V. Mortet, J. C. De Jaeger, B. Giordanengo, M. Richter, F. Scholze, and J. F. Hochedez, “Recent developments of wide-bandgap semiconductor based UV sensors,” Diamond Related Materials18(5-8), 860–864 (2009).
[CrossRef]

A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. Hochedez, “193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett.92(5), 053501 (2008).
[CrossRef]

Zou, Y. S.

A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. Hochedez, “193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett.92(5), 053501 (2008).
[CrossRef]

Appl. Phys. Lett. (6)

H. Jiang and T. Egawa, “High quality AlGaN solar-blind Schottky photodiodes fabricated on AIN/sapphire template,” Appl. Phys. Lett.90(12), 121121 (2007).
[CrossRef]

T. Tut, M. Gokkavas, A. Inal, and E. Ozbay, “AlxGa1−xN-based avalanche photodiodes with high reproducible avalanche gain,” Appl. Phys. Lett.90(16), 163506 (2007).
[CrossRef]

A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. Hochedez, “193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett.92(5), 053501 (2008).
[CrossRef]

Y. N. Hou, Z. X. Mei, Z. L. Liu, T. C. Zhang, and X. L. Du, “Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain,” Appl. Phys. Lett.98(10), 103506 (2011).
[CrossRef]

J. W. Mares, R. C. Boutwell, M. Wei, A. Scheurer, and W. V. Schoenfeld, “Deep-ultraviolet photodetectors from epitaxially grown NixMg1−xO,” Appl. Phys. Lett.97(16), 161113 (2010).
[CrossRef]

C. Li, Y. Bando, M. Liao, Y. Koide, and D. Golberg, “Visible-blind deep-ultraviolet Schottky photodetector with a photocurrent gain based on individual Zn2GeO4 nanowire,” Appl. Phys. Lett.97(16), 161102 (2010).
[CrossRef]

Diamond Related Materials (1)

A. BenMoussa, A. Soltani, U. Schühle, K. Haenen, Y. M. Chong, W. J. Zhang, R. Dahal, J. Y. Lin, H. X. Jiang, H. A. Barkad, B. BenMoussa, D. Bolsee, C. Hermans, U. Kroth, C. Laubis, V. Mortet, J. C. De Jaeger, B. Giordanengo, M. Richter, F. Scholze, and J. F. Hochedez, “Recent developments of wide-bandgap semiconductor based UV sensors,” Diamond Related Materials18(5-8), 860–864 (2009).
[CrossRef]

IEEE Sens. J. (1)

C. Y. Lu, S. P. Chang, S. J. Chang, Y. Z. Chiou, C. F. Kuo, H. M. Chang, C. L. Hsu, and I. C. Chen, “Noise characteristics of ZnO-nanowire photodetectors prepared on ZnO:Ga/glass templates,” IEEE Sens. J.7(7), 1020–11024 (2007).
[CrossRef]

J. Appl. Phys. (3)

S. Zh. Karazhanov, P. Ravindran, H. Fjellvåg, and B. G. Svensson, “Electronic structure and optical properties of ZnSiO3 and Zn2SiO4,” J. Appl. Phys.106(12), 123701 (2009).
[CrossRef]

U. Ozgur, Ya. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doğan, V. Avrutin, S. J. Cho, and H. Morkoç, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys.98(4), 041301 (2005).
[CrossRef]

V. V. Kuryatkov, B. A. Borisov, S. A. Nikishin, Yu. Kudryavtsev, R. Asomoza, V. I. Kuchinskii, G. S. Sokolovskii, D. Y. Song, and M. Holtz, “247 nm solar-blind ultraviolet p-i-n photodetector,” J. Appl. Phys.100(9), 096104 (2006).
[CrossRef]

J. Cryst. Growth (1)

S. J. Young, L. W. Ji, S. J. Chang, and Y. K. Su, “ZnO metal–semiconductor–metal ultraviolet sensors with various contact electrodes,” J. Cryst. Growth293(1), 43–47 (2006).
[CrossRef]

J. Electrochem. Soc. (1)

S. J. Young, L. W. Ji, S. J. Chang, and X. L. Du, “ZnO metal-semiconductor-metal ultraviolet photodiodes with Au contacts,” J. Electrochem. Soc.154(1), H26–H29 (2007).
[CrossRef]

J. Phys. D Appl. Phys. (1)

S. Chakrabarti, D. Ganguli, and S. Chaudhuri, “Photoluminescence of ZnO nanocrystallites confined in sol–gel silica matrix,” J. Phys. D Appl. Phys.36(2), 146–151 (2003).
[CrossRef]

Jpn. J. Appl. Phys. (1)

L. W. Ji, C. Z. Wu, C. M. Lin, T. H. Meen, K. T. Lam, S. M. Peng, S. J. Young, and C. H. Liu, “Characteristic improvements of ZnO-based metal–semiconductor–metal photodetector on flexible substrate with ZnO cap layer,” Jpn. J. Appl. Phys.49(5), 052201 (2010).
[CrossRef]

Mater. Sci. Semicond. Process. (1)

W. F. Yang, F. Zhang, Z. G. Liu, and Z. G. Wu, “Effects of annealing on the performance of 4H-SiC metal–semiconductor–metal ultraviolet photodetectors,” Mater. Sci. Semicond. Process.11(2), 59–62 (2008).
[CrossRef]

Nanoscale Res. Lett. (1)

T. P. Chen, S. J. Young, S. J. Chang, C. H. Hsiao, and Y. J. Hsu, “Bending effects of ZnO nanorod metal-semiconductor-metal photodetectors on flexible polyimide substrate,” Nanoscale Res. Lett.7(1), 214 (2012).
[CrossRef] [PubMed]

Nitride-based MSM photodetectors with a HEMT structure and a low-temperature AlGaN intermediate layer (1)

K. H. Lee, R. W. Chuang, P. C. Chang, S. J. Chang, Y. C. Wang, C. L. Yu, J. C. Lin, and S. L. Wu, “Nitride-based MSM photodetectors with a HEMT structure and a low-temperature AlGaN intermediate layer,” J. Electrochem. Soc. 155, 959–963 (20108).

Nucl. Instrum. Methods Phys. Res. B (1)

H. Amekura, K. Kono, N. Kishimoto, and C. Buchal, “Formation of zinc-oxide nanoparticles in SiO2 by ion implantation combined with thermal oxidation,” Nucl. Instrum. Methods Phys. Res. B91, 96–99 (2007).

Phys. Status Solidi., A Appl. Mater. Sci. (1)

V. Musat, E. Fortunato, S. Petrescu, and A. M. Botelho do Rego, “ZnO/SiO2 nanocomposite thin films by sol–gel method,” Phys. Status Solidi., A Appl. Mater. Sci.205(8), 2075–2079 (2008).
[CrossRef]

Semicond. Sci. Technol. (1)

C. Y. Lee, M. Y. Lin, W. H. Wu, J. Y. Wang, Y. Chou, W. F. Su, Y. F. Chen, and C. F. Lin, “Flexible ZnO transparent thin-film transistors by a solution-based process at various solution concentrations,” Semicond. Sci. Technol.25(10), 105008 (2010).
[CrossRef]

Solid-State Electron. (1)

T. Tut, N. Biyikli, I. Kimukin, T. Kartaloglu, O. Aytur, M. S. Unlu, and E. Ozbay, “High bandwidth-efficiency solar-blind AlGaN Schottky photodiodes with low dark current,” Solid-State Electron.49(1), 117–122 (2005).
[CrossRef]

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Figures (6)

Fig. 1
Fig. 1

(a) Image of the fabricated devices and (b) schematic of the ZnO–SiO2 nanocomposite MSM PDs on PES.

Fig. 2
Fig. 2

(a) I–V characteristics and (b) associated photocurrent and dark current ratios of the fabricated ZnO–SiO2 nanocomposite MSM PDs with and without the organic buffer layer.

Fig. 3
Fig. 3

Measured optical responsivities of the fabricated ZnO–SiO2 nanocomposite MSM PDs with and without the organic buffer layer (a) as a function of wavelength at a bias of −10 V and (b) as a function of applied bias at 240 nm illumination. The inset shows the normalized responsivities of the ZnO–SiO2 nanocomposite MSM PDs with and without buffer layer as a function of reverse bias voltage under illumination (at 240nm).

Fig. 4
Fig. 4

Low frequency noise power density spectra with various bias voltages of the ZnO–SiO2 nanocomposite MSM PD on PES without (a) and with (b) the SiOx(CH3) buffer layer. (c) 10 Hz noise power density as a function of dark current for ZnO–SiO2 nanocomposite MSM PD on PES with and without the SiOx(CH3) buffer layer.

Fig. 5
Fig. 5

NEP and D* as functions of applied bias of the ZnO–SiO2 nanocomposite MSM PD on PES with and without the SiOx(CH3) buffer layer.

Fig. 6
Fig. 6

Energy band diagram of the ZnO–SiO2 nanocomposite MSM PD on PES (a) with and (b) without the SiOx(CH3) buffer interface under illumination UV light with the same bias voltage.

Equations (4)

Equations on this page are rendered with MathJax. Learn more.

S n ( f )=K I d β f γ
i n 2 = 0 B S n ( f )df
NEP= i n 2 R
D * = A × B NEP

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