Abstract

In this letter, we describe a novel gain measurement approach for semiconductor edge-emitting lasers, with which TE and TM gain spectra can be easily obtained by collecting the amplified spontaneous emissions at dual facets of the device. An unstrained and continuously-operated GaAs/AlGaAs single quantum well laser strip is used to illustrate this method. The measured gain spectra are compared with theoretical gain curves to analyze the gain polarization characteristics and the relevant subband structure in the valence band of the well using the measured gain spectra.

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  1. B. W. Hakki and T. L. Paoli, “Gain spectra in GaAs double-heterostructure injection lasers,” J. Appl. Phys.46(3), 1299–1306 (1975).
    [CrossRef]
  2. B. W. Hakki and T. L. Paoli, “CW degradation at 300K of GaAs double-heterostructure junction lasers II. Electronic gain,” J. Appl. Phys.44(9), 4113–4119 (1973).
    [CrossRef]
  3. D. T. Cassidy, “Technique for measurement of the gain spectra of semiconductor diode lasers,” J. Appl. Phys.56(11), 3096–3099 (1984).
    [CrossRef]
  4. C. H. Henry, R. A. Logan, and F. R. Merritt, “Measurement of gain and absorption spectra in AlGaAs buried heterostructure lasers,” J. Appl. Phys.51(6), 3042–3050 (1980).
    [CrossRef]
  5. A. Oster, G. Erbert, and H. Wenzel, “Gain spectra measurements by a variable stripe length method with current injection,” Electron. Lett.33(10), 864–866 (1997).
    [CrossRef]
  6. A. Oster, F. Bugge, G. Erbert, and H. Wenzel, “Gain spectra measurement of strained and strain-compensated InGaAsP-AlGaAs laser structures for λ≅800 nm,” IEEE J. Sel. Top. Quantum Electron.5, 631–636 (1999).
    [CrossRef]
  7. J. D. Thomson, H. D. Summers, P. J. Hulyer, P. M. Smowton, and P. Blood, “Determination of single pass optical gain and internal loss using a multisection device,” Appl. Phys. Lett.75(17), 2527–2529 (1999).
    [CrossRef]
  8. J. D. Thomson, H. D. Summers, P. J. Hulyer, P. M. Smowton, and P. Blood, “Measurement of optical gain and Fermi level separation in semiconductor structures,” Proc. SPIE3944, 201–208 (2000).
    [CrossRef]
  9. P. Blood, G. M. Lewis, P. M. Smowton, H. Summers, J. Thomson, and J. Lutti, “Characterization of semiconductor laser gain media by the segmented contact method,” IEEE J. Sel. Top. Quantum Electron.9(5), 1275–1282 (2003).
    [CrossRef]
  10. G. M. Lewis, J. D. Thomson, P. M. Smowton, P. J. Hulyer, and P. Blood, “Gain characteristics of GaInIP quantum well laser structures,” Proc. SPIE4651, 1–10 (2002).
    [CrossRef]
  11. G. M. Lewis, P. M. Smowton, P. Blood, G. Jones, and S. Bland, “Measurement of transverse electric and transverse magnetic spontaneous emission and gain in tensile strained GaInP laser diodes,” Appl. Phys. Lett.80(19), 3488–3490 (2002).
    [CrossRef]
  12. Z. Mi, S. Fathpour, and P. Bhattacharya, “Measurement of modal gain in 1.1μm p-doped tunnel injection InGaAs/GaAs quantum dot laser heterostructure,” Electron. Lett.41(23), 1282–1283 (2005).
    [CrossRef]
  13. J. Troger, “Measurement of gain in pump diode lasers using a low-coherence source and synchronous detection,” J. Lightwave Technol.21(12), 3441–3445 (2003).
    [CrossRef]
  14. L. A. Lam Sin Cho, P. M. Smowton, and B. Thomas, “Spectral gain measurements for semiconductor laser diodes,” Proc. IEEE137, 64–68 (1990).
  15. S. Suchalkin, D. Westerfeld, G. Blenky, J. D. Bruno, J. Pham, F. Towner, and R. L. Tober, “Measurement of semiconductor laser gain by the segmented contact method under strong current spreading conditions,” IEEE J. Quantum Electron.44(6), 561–566 (2008).
  16. L. A. Coldren and S. W. Corzine, Diode Lasers and Photonic Integrated Circuits, 2nd edition (Wiley, 2012).

2008 (1)

S. Suchalkin, D. Westerfeld, G. Blenky, J. D. Bruno, J. Pham, F. Towner, and R. L. Tober, “Measurement of semiconductor laser gain by the segmented contact method under strong current spreading conditions,” IEEE J. Quantum Electron.44(6), 561–566 (2008).

2005 (1)

Z. Mi, S. Fathpour, and P. Bhattacharya, “Measurement of modal gain in 1.1μm p-doped tunnel injection InGaAs/GaAs quantum dot laser heterostructure,” Electron. Lett.41(23), 1282–1283 (2005).
[CrossRef]

2003 (2)

P. Blood, G. M. Lewis, P. M. Smowton, H. Summers, J. Thomson, and J. Lutti, “Characterization of semiconductor laser gain media by the segmented contact method,” IEEE J. Sel. Top. Quantum Electron.9(5), 1275–1282 (2003).
[CrossRef]

J. Troger, “Measurement of gain in pump diode lasers using a low-coherence source and synchronous detection,” J. Lightwave Technol.21(12), 3441–3445 (2003).
[CrossRef]

2002 (2)

G. M. Lewis, J. D. Thomson, P. M. Smowton, P. J. Hulyer, and P. Blood, “Gain characteristics of GaInIP quantum well laser structures,” Proc. SPIE4651, 1–10 (2002).
[CrossRef]

G. M. Lewis, P. M. Smowton, P. Blood, G. Jones, and S. Bland, “Measurement of transverse electric and transverse magnetic spontaneous emission and gain in tensile strained GaInP laser diodes,” Appl. Phys. Lett.80(19), 3488–3490 (2002).
[CrossRef]

2000 (1)

J. D. Thomson, H. D. Summers, P. J. Hulyer, P. M. Smowton, and P. Blood, “Measurement of optical gain and Fermi level separation in semiconductor structures,” Proc. SPIE3944, 201–208 (2000).
[CrossRef]

1999 (2)

A. Oster, F. Bugge, G. Erbert, and H. Wenzel, “Gain spectra measurement of strained and strain-compensated InGaAsP-AlGaAs laser structures for λ≅800 nm,” IEEE J. Sel. Top. Quantum Electron.5, 631–636 (1999).
[CrossRef]

J. D. Thomson, H. D. Summers, P. J. Hulyer, P. M. Smowton, and P. Blood, “Determination of single pass optical gain and internal loss using a multisection device,” Appl. Phys. Lett.75(17), 2527–2529 (1999).
[CrossRef]

1997 (1)

A. Oster, G. Erbert, and H. Wenzel, “Gain spectra measurements by a variable stripe length method with current injection,” Electron. Lett.33(10), 864–866 (1997).
[CrossRef]

1990 (1)

L. A. Lam Sin Cho, P. M. Smowton, and B. Thomas, “Spectral gain measurements for semiconductor laser diodes,” Proc. IEEE137, 64–68 (1990).

1984 (1)

D. T. Cassidy, “Technique for measurement of the gain spectra of semiconductor diode lasers,” J. Appl. Phys.56(11), 3096–3099 (1984).
[CrossRef]

1980 (1)

C. H. Henry, R. A. Logan, and F. R. Merritt, “Measurement of gain and absorption spectra in AlGaAs buried heterostructure lasers,” J. Appl. Phys.51(6), 3042–3050 (1980).
[CrossRef]

1975 (1)

B. W. Hakki and T. L. Paoli, “Gain spectra in GaAs double-heterostructure injection lasers,” J. Appl. Phys.46(3), 1299–1306 (1975).
[CrossRef]

1973 (1)

B. W. Hakki and T. L. Paoli, “CW degradation at 300K of GaAs double-heterostructure junction lasers II. Electronic gain,” J. Appl. Phys.44(9), 4113–4119 (1973).
[CrossRef]

Bhattacharya, P.

Z. Mi, S. Fathpour, and P. Bhattacharya, “Measurement of modal gain in 1.1μm p-doped tunnel injection InGaAs/GaAs quantum dot laser heterostructure,” Electron. Lett.41(23), 1282–1283 (2005).
[CrossRef]

Bland, S.

G. M. Lewis, P. M. Smowton, P. Blood, G. Jones, and S. Bland, “Measurement of transverse electric and transverse magnetic spontaneous emission and gain in tensile strained GaInP laser diodes,” Appl. Phys. Lett.80(19), 3488–3490 (2002).
[CrossRef]

Blenky, G.

S. Suchalkin, D. Westerfeld, G. Blenky, J. D. Bruno, J. Pham, F. Towner, and R. L. Tober, “Measurement of semiconductor laser gain by the segmented contact method under strong current spreading conditions,” IEEE J. Quantum Electron.44(6), 561–566 (2008).

Blood, P.

P. Blood, G. M. Lewis, P. M. Smowton, H. Summers, J. Thomson, and J. Lutti, “Characterization of semiconductor laser gain media by the segmented contact method,” IEEE J. Sel. Top. Quantum Electron.9(5), 1275–1282 (2003).
[CrossRef]

G. M. Lewis, J. D. Thomson, P. M. Smowton, P. J. Hulyer, and P. Blood, “Gain characteristics of GaInIP quantum well laser structures,” Proc. SPIE4651, 1–10 (2002).
[CrossRef]

G. M. Lewis, P. M. Smowton, P. Blood, G. Jones, and S. Bland, “Measurement of transverse electric and transverse magnetic spontaneous emission and gain in tensile strained GaInP laser diodes,” Appl. Phys. Lett.80(19), 3488–3490 (2002).
[CrossRef]

J. D. Thomson, H. D. Summers, P. J. Hulyer, P. M. Smowton, and P. Blood, “Measurement of optical gain and Fermi level separation in semiconductor structures,” Proc. SPIE3944, 201–208 (2000).
[CrossRef]

J. D. Thomson, H. D. Summers, P. J. Hulyer, P. M. Smowton, and P. Blood, “Determination of single pass optical gain and internal loss using a multisection device,” Appl. Phys. Lett.75(17), 2527–2529 (1999).
[CrossRef]

Bruno, J. D.

S. Suchalkin, D. Westerfeld, G. Blenky, J. D. Bruno, J. Pham, F. Towner, and R. L. Tober, “Measurement of semiconductor laser gain by the segmented contact method under strong current spreading conditions,” IEEE J. Quantum Electron.44(6), 561–566 (2008).

Bugge, F.

A. Oster, F. Bugge, G. Erbert, and H. Wenzel, “Gain spectra measurement of strained and strain-compensated InGaAsP-AlGaAs laser structures for λ≅800 nm,” IEEE J. Sel. Top. Quantum Electron.5, 631–636 (1999).
[CrossRef]

Cassidy, D. T.

D. T. Cassidy, “Technique for measurement of the gain spectra of semiconductor diode lasers,” J. Appl. Phys.56(11), 3096–3099 (1984).
[CrossRef]

Erbert, G.

A. Oster, F. Bugge, G. Erbert, and H. Wenzel, “Gain spectra measurement of strained and strain-compensated InGaAsP-AlGaAs laser structures for λ≅800 nm,” IEEE J. Sel. Top. Quantum Electron.5, 631–636 (1999).
[CrossRef]

A. Oster, G. Erbert, and H. Wenzel, “Gain spectra measurements by a variable stripe length method with current injection,” Electron. Lett.33(10), 864–866 (1997).
[CrossRef]

Fathpour, S.

Z. Mi, S. Fathpour, and P. Bhattacharya, “Measurement of modal gain in 1.1μm p-doped tunnel injection InGaAs/GaAs quantum dot laser heterostructure,” Electron. Lett.41(23), 1282–1283 (2005).
[CrossRef]

Hakki, B. W.

B. W. Hakki and T. L. Paoli, “Gain spectra in GaAs double-heterostructure injection lasers,” J. Appl. Phys.46(3), 1299–1306 (1975).
[CrossRef]

B. W. Hakki and T. L. Paoli, “CW degradation at 300K of GaAs double-heterostructure junction lasers II. Electronic gain,” J. Appl. Phys.44(9), 4113–4119 (1973).
[CrossRef]

Henry, C. H.

C. H. Henry, R. A. Logan, and F. R. Merritt, “Measurement of gain and absorption spectra in AlGaAs buried heterostructure lasers,” J. Appl. Phys.51(6), 3042–3050 (1980).
[CrossRef]

Hulyer, P. J.

G. M. Lewis, J. D. Thomson, P. M. Smowton, P. J. Hulyer, and P. Blood, “Gain characteristics of GaInIP quantum well laser structures,” Proc. SPIE4651, 1–10 (2002).
[CrossRef]

J. D. Thomson, H. D. Summers, P. J. Hulyer, P. M. Smowton, and P. Blood, “Measurement of optical gain and Fermi level separation in semiconductor structures,” Proc. SPIE3944, 201–208 (2000).
[CrossRef]

J. D. Thomson, H. D. Summers, P. J. Hulyer, P. M. Smowton, and P. Blood, “Determination of single pass optical gain and internal loss using a multisection device,” Appl. Phys. Lett.75(17), 2527–2529 (1999).
[CrossRef]

Jones, G.

G. M. Lewis, P. M. Smowton, P. Blood, G. Jones, and S. Bland, “Measurement of transverse electric and transverse magnetic spontaneous emission and gain in tensile strained GaInP laser diodes,” Appl. Phys. Lett.80(19), 3488–3490 (2002).
[CrossRef]

Lam Sin Cho, L. A.

L. A. Lam Sin Cho, P. M. Smowton, and B. Thomas, “Spectral gain measurements for semiconductor laser diodes,” Proc. IEEE137, 64–68 (1990).

Lewis, G. M.

P. Blood, G. M. Lewis, P. M. Smowton, H. Summers, J. Thomson, and J. Lutti, “Characterization of semiconductor laser gain media by the segmented contact method,” IEEE J. Sel. Top. Quantum Electron.9(5), 1275–1282 (2003).
[CrossRef]

G. M. Lewis, J. D. Thomson, P. M. Smowton, P. J. Hulyer, and P. Blood, “Gain characteristics of GaInIP quantum well laser structures,” Proc. SPIE4651, 1–10 (2002).
[CrossRef]

G. M. Lewis, P. M. Smowton, P. Blood, G. Jones, and S. Bland, “Measurement of transverse electric and transverse magnetic spontaneous emission and gain in tensile strained GaInP laser diodes,” Appl. Phys. Lett.80(19), 3488–3490 (2002).
[CrossRef]

Logan, R. A.

C. H. Henry, R. A. Logan, and F. R. Merritt, “Measurement of gain and absorption spectra in AlGaAs buried heterostructure lasers,” J. Appl. Phys.51(6), 3042–3050 (1980).
[CrossRef]

Lutti, J.

P. Blood, G. M. Lewis, P. M. Smowton, H. Summers, J. Thomson, and J. Lutti, “Characterization of semiconductor laser gain media by the segmented contact method,” IEEE J. Sel. Top. Quantum Electron.9(5), 1275–1282 (2003).
[CrossRef]

Merritt, F. R.

C. H. Henry, R. A. Logan, and F. R. Merritt, “Measurement of gain and absorption spectra in AlGaAs buried heterostructure lasers,” J. Appl. Phys.51(6), 3042–3050 (1980).
[CrossRef]

Mi, Z.

Z. Mi, S. Fathpour, and P. Bhattacharya, “Measurement of modal gain in 1.1μm p-doped tunnel injection InGaAs/GaAs quantum dot laser heterostructure,” Electron. Lett.41(23), 1282–1283 (2005).
[CrossRef]

Oster, A.

A. Oster, F. Bugge, G. Erbert, and H. Wenzel, “Gain spectra measurement of strained and strain-compensated InGaAsP-AlGaAs laser structures for λ≅800 nm,” IEEE J. Sel. Top. Quantum Electron.5, 631–636 (1999).
[CrossRef]

A. Oster, G. Erbert, and H. Wenzel, “Gain spectra measurements by a variable stripe length method with current injection,” Electron. Lett.33(10), 864–866 (1997).
[CrossRef]

Paoli, T. L.

B. W. Hakki and T. L. Paoli, “Gain spectra in GaAs double-heterostructure injection lasers,” J. Appl. Phys.46(3), 1299–1306 (1975).
[CrossRef]

B. W. Hakki and T. L. Paoli, “CW degradation at 300K of GaAs double-heterostructure junction lasers II. Electronic gain,” J. Appl. Phys.44(9), 4113–4119 (1973).
[CrossRef]

Pham, J.

S. Suchalkin, D. Westerfeld, G. Blenky, J. D. Bruno, J. Pham, F. Towner, and R. L. Tober, “Measurement of semiconductor laser gain by the segmented contact method under strong current spreading conditions,” IEEE J. Quantum Electron.44(6), 561–566 (2008).

Smowton, P. M.

P. Blood, G. M. Lewis, P. M. Smowton, H. Summers, J. Thomson, and J. Lutti, “Characterization of semiconductor laser gain media by the segmented contact method,” IEEE J. Sel. Top. Quantum Electron.9(5), 1275–1282 (2003).
[CrossRef]

G. M. Lewis, J. D. Thomson, P. M. Smowton, P. J. Hulyer, and P. Blood, “Gain characteristics of GaInIP quantum well laser structures,” Proc. SPIE4651, 1–10 (2002).
[CrossRef]

G. M. Lewis, P. M. Smowton, P. Blood, G. Jones, and S. Bland, “Measurement of transverse electric and transverse magnetic spontaneous emission and gain in tensile strained GaInP laser diodes,” Appl. Phys. Lett.80(19), 3488–3490 (2002).
[CrossRef]

J. D. Thomson, H. D. Summers, P. J. Hulyer, P. M. Smowton, and P. Blood, “Measurement of optical gain and Fermi level separation in semiconductor structures,” Proc. SPIE3944, 201–208 (2000).
[CrossRef]

J. D. Thomson, H. D. Summers, P. J. Hulyer, P. M. Smowton, and P. Blood, “Determination of single pass optical gain and internal loss using a multisection device,” Appl. Phys. Lett.75(17), 2527–2529 (1999).
[CrossRef]

L. A. Lam Sin Cho, P. M. Smowton, and B. Thomas, “Spectral gain measurements for semiconductor laser diodes,” Proc. IEEE137, 64–68 (1990).

Suchalkin, S.

S. Suchalkin, D. Westerfeld, G. Blenky, J. D. Bruno, J. Pham, F. Towner, and R. L. Tober, “Measurement of semiconductor laser gain by the segmented contact method under strong current spreading conditions,” IEEE J. Quantum Electron.44(6), 561–566 (2008).

Summers, H.

P. Blood, G. M. Lewis, P. M. Smowton, H. Summers, J. Thomson, and J. Lutti, “Characterization of semiconductor laser gain media by the segmented contact method,” IEEE J. Sel. Top. Quantum Electron.9(5), 1275–1282 (2003).
[CrossRef]

Summers, H. D.

J. D. Thomson, H. D. Summers, P. J. Hulyer, P. M. Smowton, and P. Blood, “Measurement of optical gain and Fermi level separation in semiconductor structures,” Proc. SPIE3944, 201–208 (2000).
[CrossRef]

J. D. Thomson, H. D. Summers, P. J. Hulyer, P. M. Smowton, and P. Blood, “Determination of single pass optical gain and internal loss using a multisection device,” Appl. Phys. Lett.75(17), 2527–2529 (1999).
[CrossRef]

Thomas, B.

L. A. Lam Sin Cho, P. M. Smowton, and B. Thomas, “Spectral gain measurements for semiconductor laser diodes,” Proc. IEEE137, 64–68 (1990).

Thomson, J.

P. Blood, G. M. Lewis, P. M. Smowton, H. Summers, J. Thomson, and J. Lutti, “Characterization of semiconductor laser gain media by the segmented contact method,” IEEE J. Sel. Top. Quantum Electron.9(5), 1275–1282 (2003).
[CrossRef]

Thomson, J. D.

G. M. Lewis, J. D. Thomson, P. M. Smowton, P. J. Hulyer, and P. Blood, “Gain characteristics of GaInIP quantum well laser structures,” Proc. SPIE4651, 1–10 (2002).
[CrossRef]

J. D. Thomson, H. D. Summers, P. J. Hulyer, P. M. Smowton, and P. Blood, “Measurement of optical gain and Fermi level separation in semiconductor structures,” Proc. SPIE3944, 201–208 (2000).
[CrossRef]

J. D. Thomson, H. D. Summers, P. J. Hulyer, P. M. Smowton, and P. Blood, “Determination of single pass optical gain and internal loss using a multisection device,” Appl. Phys. Lett.75(17), 2527–2529 (1999).
[CrossRef]

Tober, R. L.

S. Suchalkin, D. Westerfeld, G. Blenky, J. D. Bruno, J. Pham, F. Towner, and R. L. Tober, “Measurement of semiconductor laser gain by the segmented contact method under strong current spreading conditions,” IEEE J. Quantum Electron.44(6), 561–566 (2008).

Towner, F.

S. Suchalkin, D. Westerfeld, G. Blenky, J. D. Bruno, J. Pham, F. Towner, and R. L. Tober, “Measurement of semiconductor laser gain by the segmented contact method under strong current spreading conditions,” IEEE J. Quantum Electron.44(6), 561–566 (2008).

Troger, J.

Wenzel, H.

A. Oster, F. Bugge, G. Erbert, and H. Wenzel, “Gain spectra measurement of strained and strain-compensated InGaAsP-AlGaAs laser structures for λ≅800 nm,” IEEE J. Sel. Top. Quantum Electron.5, 631–636 (1999).
[CrossRef]

A. Oster, G. Erbert, and H. Wenzel, “Gain spectra measurements by a variable stripe length method with current injection,” Electron. Lett.33(10), 864–866 (1997).
[CrossRef]

Westerfeld, D.

S. Suchalkin, D. Westerfeld, G. Blenky, J. D. Bruno, J. Pham, F. Towner, and R. L. Tober, “Measurement of semiconductor laser gain by the segmented contact method under strong current spreading conditions,” IEEE J. Quantum Electron.44(6), 561–566 (2008).

Appl. Phys. Lett. (2)

J. D. Thomson, H. D. Summers, P. J. Hulyer, P. M. Smowton, and P. Blood, “Determination of single pass optical gain and internal loss using a multisection device,” Appl. Phys. Lett.75(17), 2527–2529 (1999).
[CrossRef]

G. M. Lewis, P. M. Smowton, P. Blood, G. Jones, and S. Bland, “Measurement of transverse electric and transverse magnetic spontaneous emission and gain in tensile strained GaInP laser diodes,” Appl. Phys. Lett.80(19), 3488–3490 (2002).
[CrossRef]

Electron. Lett. (2)

Z. Mi, S. Fathpour, and P. Bhattacharya, “Measurement of modal gain in 1.1μm p-doped tunnel injection InGaAs/GaAs quantum dot laser heterostructure,” Electron. Lett.41(23), 1282–1283 (2005).
[CrossRef]

A. Oster, G. Erbert, and H. Wenzel, “Gain spectra measurements by a variable stripe length method with current injection,” Electron. Lett.33(10), 864–866 (1997).
[CrossRef]

IEEE J. Quantum Electron. (1)

S. Suchalkin, D. Westerfeld, G. Blenky, J. D. Bruno, J. Pham, F. Towner, and R. L. Tober, “Measurement of semiconductor laser gain by the segmented contact method under strong current spreading conditions,” IEEE J. Quantum Electron.44(6), 561–566 (2008).

IEEE J. Sel. Top. Quantum Electron. (2)

P. Blood, G. M. Lewis, P. M. Smowton, H. Summers, J. Thomson, and J. Lutti, “Characterization of semiconductor laser gain media by the segmented contact method,” IEEE J. Sel. Top. Quantum Electron.9(5), 1275–1282 (2003).
[CrossRef]

A. Oster, F. Bugge, G. Erbert, and H. Wenzel, “Gain spectra measurement of strained and strain-compensated InGaAsP-AlGaAs laser structures for λ≅800 nm,” IEEE J. Sel. Top. Quantum Electron.5, 631–636 (1999).
[CrossRef]

J. Appl. Phys. (4)

B. W. Hakki and T. L. Paoli, “Gain spectra in GaAs double-heterostructure injection lasers,” J. Appl. Phys.46(3), 1299–1306 (1975).
[CrossRef]

B. W. Hakki and T. L. Paoli, “CW degradation at 300K of GaAs double-heterostructure junction lasers II. Electronic gain,” J. Appl. Phys.44(9), 4113–4119 (1973).
[CrossRef]

D. T. Cassidy, “Technique for measurement of the gain spectra of semiconductor diode lasers,” J. Appl. Phys.56(11), 3096–3099 (1984).
[CrossRef]

C. H. Henry, R. A. Logan, and F. R. Merritt, “Measurement of gain and absorption spectra in AlGaAs buried heterostructure lasers,” J. Appl. Phys.51(6), 3042–3050 (1980).
[CrossRef]

J. Lightwave Technol. (1)

Proc. IEEE (1)

L. A. Lam Sin Cho, P. M. Smowton, and B. Thomas, “Spectral gain measurements for semiconductor laser diodes,” Proc. IEEE137, 64–68 (1990).

Proc. SPIE (2)

G. M. Lewis, J. D. Thomson, P. M. Smowton, P. J. Hulyer, and P. Blood, “Gain characteristics of GaInIP quantum well laser structures,” Proc. SPIE4651, 1–10 (2002).
[CrossRef]

J. D. Thomson, H. D. Summers, P. J. Hulyer, P. M. Smowton, and P. Blood, “Measurement of optical gain and Fermi level separation in semiconductor structures,” Proc. SPIE3944, 201–208 (2000).
[CrossRef]

Other (1)

L. A. Coldren and S. W. Corzine, Diode Lasers and Photonic Integrated Circuits, 2nd edition (Wiley, 2012).

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Figures (6)

Fig. 1
Fig. 1

Diagram of gain measurement model based on the ASE collected from dual facets.

Fig. 2
Fig. 2

ASE spectra of TE and TM polarizations measured at dual facets with a continuous current density of 30A·cm−2 at room temperature.

Fig. 3
Fig. 3

Modal gain spectra measured over a current range of 10 A·cm−2 to 90 A·cm−2.

Fig. 4
Fig. 4

Peak gain as a function of the current density.

Fig. 5
Fig. 5

Calculated material gains with various carrier densities.

Fig. 6
Fig. 6

Calculated HH and LH subbands in the unstrained GaAs quantum well for a fixed carrier density.

Equations (8)

Equations on this page are rendered with MathJax. Learn more.

I AS E 2 = 0 L I sp e Gx (1R)dx .
I AS E 1 = 0 L I sp [ 1+R e 2Gx +2 R e Gx cos(2kx) ] e G(Lx) dx .
I ASE2 = ( 1R ) I sp G ( e GL 1 ).
I ASE1 = I sp G ( e GL 1 )( Re GL +1 )[ 1+ λ R G e GL 2π( e GL 1 )( R e GL +1 ) sin( 2kL ) ].
I ASE1 = I sp G ( e GL 1 )( Re GL +1 ).
G= 1 L ln ( 1R ) I ASE1 I ASE2 R I ASE2 .
R= ( n A l x G a 1x As n air n A l x G a 1x As + n air ) 2 .
n(x,λ)= A+ B λ 2 C D λ 2 .

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