Abstract

The SiH4 and GeH4 reactant gases used for depositing microcrystalline SiGe films could be simultaneously decomposed when acted cooperatively on the plasma and the assistant CO2 laser in the laser-assisted plasma enhanced chemical vapor deposition system. The carrier mobility of the 80 W laser-assisted SiGe films was significantly increased to 66.8 cm2/V-s compared with 2.22 cm2/V-s of the non-laser-assisted SiGe films. The performances of the resulting p-Si/i-SiGe/n-Si near-infrared photodetectors were improved due to the high quality and high carrier mobility of the laser-assisted SiGe films. The maximum photoresponsivity and the maximum quantum efficiency of the photodetectors with 80 W laser-assisted SiGe films were respectively improved to 0.47 A/W and 68.5% in comparison with 0.31 A/W and 46.5% of the photodetectors with non-laser-assisted SiGe films.

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    [CrossRef]

2011

2010

2008

T. Matsui, C. W. Chang, T. Takada, M. Isomura, H. Fujiwara, and M. Kondo, “Microcrystalline Si1-xGex solar cells exhibiting enhanced infrared response with reduced absorber thickness,” Appl. Phys. Express1(3), 031501 (2008).
[CrossRef]

C. T. Lee, C. C. Lin, H. Y. Lee, and P. S. Chen, “Changes in surface state density due to chlorine treatment in GaN Schottky ultraviolet photodetectors,” J. Appl. Phys.103(9), 094504 (2008).
[CrossRef]

2007

J. N. Milgram, J. Wojcik, P. Mascher, and A. P. Knights, “Optically pumped Si nanocrystal emitter integrated with low loss silicon nitride waveguides,” Opt. Express15(22), 14679–14688 (2007).
[CrossRef] [PubMed]

T. C. Tsai, L. Z. Yu, and C. T. Lee, “Electroluminescence emission of crystalline silicon nanoclusters grown at a low temperature,” Nanotechnology18(27), 275707 (2007).
[CrossRef]

2006

T. E. Vandervelde, K. Sun, J. L. Merz, A. Kubis, R. Hull, T. L. Pernell, and J. C. Bean, “The effect of two-temperature capping on germanium/silicon quantum dots and analysis of superlattices so composed,” J. Appl. Phys.99(12), 124301 (2006).
[CrossRef]

A. J. Kubis, T. E. Vandervelde, J. C. Bean, D. N. Dunn, and R. Hull, “Analysis of the three-dimensional ordering of epitaxial Ge quantum dots using focused ion beam tomography,” Appl. Phys. Lett.88(26), 263103 (2006).
[CrossRef]

2005

C. T. Lee and H. Y. Lee, “Surface passivated function of GaAs MSM-PDs using photoelectrochemical oxidation method,” IEEE Photon. Technol. Lett.17(2), 462–464 (2005).
[CrossRef]

2002

G. H. Bauer, F. Voigt, R. Carius, M. Krause, R. Bruggemann, and T. Unold, “Electronic properties of microcrystalline SiGe-thin films by hall-experiments and photo- and dark-transport,” J. Non-Cryst. Solids299–302(1), 153–157 (2002).
[CrossRef]

2001

L. K. Teh, W. K. Choi, L. K. Bera, and W. K. Chim, “Structural characterization of polycrystalline SiGe thin film,” Solid-State Electron.45(11), 1963–1966 (2001).
[CrossRef]

2000

E. V. Jelenković, K. Y. Tong, W. Y. Cheung, I. H. Wilson, S. P. Wong, and M. C. Poon, “Low temperature doping of poly-SiGe films with boron by co-sputtering,” Thin Solid Films368(1), 55–60 (2000).
[CrossRef]

1994

K. M. McNamara, B. E. Williams, K. K. Gleason, and B. E. Scruggs, “Identification of defects and impurities in chemical-vapor deposited diamond through infrared,” J. Appl. Phys.76(4), 2466–2472 (1994).
[CrossRef]

1992

A. A. Langford, M. L. Fleet, B. P. Nelson, W. A. Lanford, and N. Maley, “Infrared absorption strength and hydrogen content of hydrogenated amorphous silicon,” Phys. Rev. B Condens. Matter45(23), 13367–13377 (1992).
[CrossRef] [PubMed]

1991

R. Biswas, I. Kwon, and C. M. Soukoulis, “Mechanism for the Staebler-Wronski effect in a-Si:H,” Phys. Rev. B Condens. Matter44(7), 3403–3406 (1991).
[CrossRef] [PubMed]

M. Kumru, “A comparison of the optical, IR, electron spin resonance and conductivity properties of a-Ge1-xCx:H with a a-Ge:H and a-Ge thin films prepared by R.F. sputtering,” Thin Solid Films198(1–2), 75–84 (1991).
[CrossRef]

D. Dasgupta, F. Demichelis, C. F. Pirri, and A. Tagliaferro, “π bands and gap states from optical absorption and electron-spin-resonance studies on amorphous carbon and amorphous hydrogenated carbon films,” Phys. Rev. B Condens. Matter43(3), 2131–2135 (1991).
[CrossRef] [PubMed]

M. A. Ghazala, W. Beyer, and H. Wagner, “Long-term stability of hydrogenated amorphous germanium measured by infrared absorption,” J. Appl. Phys.70(8), 4540–4543 (1991).
[CrossRef]

1985

J. C. Bean, “Strained-layer epitaxy of germanium-silicon alloys,” Science230(4722), 127–131 (1985).
[CrossRef] [PubMed]

1984

J. C. Bean, T. T. Sheng, L. C. Feldman, A. T. Fiory, and R. T. Lynch, “Pseudomorphic growth of GexSi1-x on silicon by molecular beam epitaxy,” Appl. Phys. Lett.44(1), 102–104 (1984).
[CrossRef]

A. T. Fiory, J. C. Bean, L. C. Feldman, and I. K. Robinson, “Commensurate and incommensurate structures in molecular beam epitaxially grown GexSi1-x films on Si(100),” J. Appl. Phys.56(4), 1227–1229 (1984).
[CrossRef]

S. Luryi, A. Kastalsky, and J. C. Bean, “New infrared detector on a silicon chip,” IEEE Trans. Electron. Dev.31(9), 1135–1139 (1984).
[CrossRef]

1980

H. Shanks, C. J. Fang, L. Ley, M. Cardona, F. J. Demond, and S. Kalbitzer, “Infrared spectrum and structure of hydrogenated amorphous silicon,” Phys. Status Solidi, B Basic Res.100(1), 43–56 (1980).
[CrossRef]

1935

W. B. Steward and H. H. Nielsen, “The Infrared absorption spectrum of silane,” Phys. Rev.47(11), 828–832 (1935).
[CrossRef]

W. B. Steward and H. H. Nielsen, “The Infrared absorption spectrum of germane,” Phys. Rev.48(11), 861–864 (1935).
[CrossRef]

Asgari, A.

Bauer, G. H.

G. H. Bauer, F. Voigt, R. Carius, M. Krause, R. Bruggemann, and T. Unold, “Electronic properties of microcrystalline SiGe-thin films by hall-experiments and photo- and dark-transport,” J. Non-Cryst. Solids299–302(1), 153–157 (2002).
[CrossRef]

Bean, J. C.

A. J. Kubis, T. E. Vandervelde, J. C. Bean, D. N. Dunn, and R. Hull, “Analysis of the three-dimensional ordering of epitaxial Ge quantum dots using focused ion beam tomography,” Appl. Phys. Lett.88(26), 263103 (2006).
[CrossRef]

T. E. Vandervelde, K. Sun, J. L. Merz, A. Kubis, R. Hull, T. L. Pernell, and J. C. Bean, “The effect of two-temperature capping on germanium/silicon quantum dots and analysis of superlattices so composed,” J. Appl. Phys.99(12), 124301 (2006).
[CrossRef]

J. C. Bean, “Strained-layer epitaxy of germanium-silicon alloys,” Science230(4722), 127–131 (1985).
[CrossRef] [PubMed]

J. C. Bean, T. T. Sheng, L. C. Feldman, A. T. Fiory, and R. T. Lynch, “Pseudomorphic growth of GexSi1-x on silicon by molecular beam epitaxy,” Appl. Phys. Lett.44(1), 102–104 (1984).
[CrossRef]

A. T. Fiory, J. C. Bean, L. C. Feldman, and I. K. Robinson, “Commensurate and incommensurate structures in molecular beam epitaxially grown GexSi1-x films on Si(100),” J. Appl. Phys.56(4), 1227–1229 (1984).
[CrossRef]

S. Luryi, A. Kastalsky, and J. C. Bean, “New infrared detector on a silicon chip,” IEEE Trans. Electron. Dev.31(9), 1135–1139 (1984).
[CrossRef]

Bera, L. K.

L. K. Teh, W. K. Choi, L. K. Bera, and W. K. Chim, “Structural characterization of polycrystalline SiGe thin film,” Solid-State Electron.45(11), 1963–1966 (2001).
[CrossRef]

Beyer, W.

M. A. Ghazala, W. Beyer, and H. Wagner, “Long-term stability of hydrogenated amorphous germanium measured by infrared absorption,” J. Appl. Phys.70(8), 4540–4543 (1991).
[CrossRef]

Biswas, R.

R. Biswas, I. Kwon, and C. M. Soukoulis, “Mechanism for the Staebler-Wronski effect in a-Si:H,” Phys. Rev. B Condens. Matter44(7), 3403–3406 (1991).
[CrossRef] [PubMed]

Bruggemann, R.

G. H. Bauer, F. Voigt, R. Carius, M. Krause, R. Bruggemann, and T. Unold, “Electronic properties of microcrystalline SiGe-thin films by hall-experiments and photo- and dark-transport,” J. Non-Cryst. Solids299–302(1), 153–157 (2002).
[CrossRef]

Cardona, M.

H. Shanks, C. J. Fang, L. Ley, M. Cardona, F. J. Demond, and S. Kalbitzer, “Infrared spectrum and structure of hydrogenated amorphous silicon,” Phys. Status Solidi, B Basic Res.100(1), 43–56 (1980).
[CrossRef]

Carius, R.

G. H. Bauer, F. Voigt, R. Carius, M. Krause, R. Bruggemann, and T. Unold, “Electronic properties of microcrystalline SiGe-thin films by hall-experiments and photo- and dark-transport,” J. Non-Cryst. Solids299–302(1), 153–157 (2002).
[CrossRef]

Chang, C. W.

T. Matsui, C. W. Chang, T. Takada, M. Isomura, H. Fujiwara, and M. Kondo, “Microcrystalline Si1-xGex solar cells exhibiting enhanced infrared response with reduced absorber thickness,” Appl. Phys. Express1(3), 031501 (2008).
[CrossRef]

Chen, P. S.

C. T. Lee, C. C. Lin, H. Y. Lee, and P. S. Chen, “Changes in surface state density due to chlorine treatment in GaN Schottky ultraviolet photodetectors,” J. Appl. Phys.103(9), 094504 (2008).
[CrossRef]

Cheung, W. Y.

E. V. Jelenković, K. Y. Tong, W. Y. Cheung, I. H. Wilson, S. P. Wong, and M. C. Poon, “Low temperature doping of poly-SiGe films with boron by co-sputtering,” Thin Solid Films368(1), 55–60 (2000).
[CrossRef]

Chim, W. K.

L. K. Teh, W. K. Choi, L. K. Bera, and W. K. Chim, “Structural characterization of polycrystalline SiGe thin film,” Solid-State Electron.45(11), 1963–1966 (2001).
[CrossRef]

Choi, W. K.

L. K. Teh, W. K. Choi, L. K. Bera, and W. K. Chim, “Structural characterization of polycrystalline SiGe thin film,” Solid-State Electron.45(11), 1963–1966 (2001).
[CrossRef]

Dasgupta, D.

D. Dasgupta, F. Demichelis, C. F. Pirri, and A. Tagliaferro, “π bands and gap states from optical absorption and electron-spin-resonance studies on amorphous carbon and amorphous hydrogenated carbon films,” Phys. Rev. B Condens. Matter43(3), 2131–2135 (1991).
[CrossRef] [PubMed]

Demichelis, F.

D. Dasgupta, F. Demichelis, C. F. Pirri, and A. Tagliaferro, “π bands and gap states from optical absorption and electron-spin-resonance studies on amorphous carbon and amorphous hydrogenated carbon films,” Phys. Rev. B Condens. Matter43(3), 2131–2135 (1991).
[CrossRef] [PubMed]

Demond, F. J.

H. Shanks, C. J. Fang, L. Ley, M. Cardona, F. J. Demond, and S. Kalbitzer, “Infrared spectrum and structure of hydrogenated amorphous silicon,” Phys. Status Solidi, B Basic Res.100(1), 43–56 (1980).
[CrossRef]

Dunn, D. N.

A. J. Kubis, T. E. Vandervelde, J. C. Bean, D. N. Dunn, and R. Hull, “Analysis of the three-dimensional ordering of epitaxial Ge quantum dots using focused ion beam tomography,” Appl. Phys. Lett.88(26), 263103 (2006).
[CrossRef]

Fang, C. J.

H. Shanks, C. J. Fang, L. Ley, M. Cardona, F. J. Demond, and S. Kalbitzer, “Infrared spectrum and structure of hydrogenated amorphous silicon,” Phys. Status Solidi, B Basic Res.100(1), 43–56 (1980).
[CrossRef]

Feldman, L. C.

A. T. Fiory, J. C. Bean, L. C. Feldman, and I. K. Robinson, “Commensurate and incommensurate structures in molecular beam epitaxially grown GexSi1-x films on Si(100),” J. Appl. Phys.56(4), 1227–1229 (1984).
[CrossRef]

J. C. Bean, T. T. Sheng, L. C. Feldman, A. T. Fiory, and R. T. Lynch, “Pseudomorphic growth of GexSi1-x on silicon by molecular beam epitaxy,” Appl. Phys. Lett.44(1), 102–104 (1984).
[CrossRef]

Fiory, A. T.

J. C. Bean, T. T. Sheng, L. C. Feldman, A. T. Fiory, and R. T. Lynch, “Pseudomorphic growth of GexSi1-x on silicon by molecular beam epitaxy,” Appl. Phys. Lett.44(1), 102–104 (1984).
[CrossRef]

A. T. Fiory, J. C. Bean, L. C. Feldman, and I. K. Robinson, “Commensurate and incommensurate structures in molecular beam epitaxially grown GexSi1-x films on Si(100),” J. Appl. Phys.56(4), 1227–1229 (1984).
[CrossRef]

Fleet, M. L.

A. A. Langford, M. L. Fleet, B. P. Nelson, W. A. Lanford, and N. Maley, “Infrared absorption strength and hydrogen content of hydrogenated amorphous silicon,” Phys. Rev. B Condens. Matter45(23), 13367–13377 (1992).
[CrossRef] [PubMed]

Fujiwara, H.

T. Matsui, C. W. Chang, T. Takada, M. Isomura, H. Fujiwara, and M. Kondo, “Microcrystalline Si1-xGex solar cells exhibiting enhanced infrared response with reduced absorber thickness,” Appl. Phys. Express1(3), 031501 (2008).
[CrossRef]

Ghazala, M. A.

M. A. Ghazala, W. Beyer, and H. Wagner, “Long-term stability of hydrogenated amorphous germanium measured by infrared absorption,” J. Appl. Phys.70(8), 4540–4543 (1991).
[CrossRef]

Gleason, K. K.

K. M. McNamara, B. E. Williams, K. K. Gleason, and B. E. Scruggs, “Identification of defects and impurities in chemical-vapor deposited diamond through infrared,” J. Appl. Phys.76(4), 2466–2472 (1994).
[CrossRef]

Huang, F. W.

Hull, R.

T. E. Vandervelde, K. Sun, J. L. Merz, A. Kubis, R. Hull, T. L. Pernell, and J. C. Bean, “The effect of two-temperature capping on germanium/silicon quantum dots and analysis of superlattices so composed,” J. Appl. Phys.99(12), 124301 (2006).
[CrossRef]

A. J. Kubis, T. E. Vandervelde, J. C. Bean, D. N. Dunn, and R. Hull, “Analysis of the three-dimensional ordering of epitaxial Ge quantum dots using focused ion beam tomography,” Appl. Phys. Lett.88(26), 263103 (2006).
[CrossRef]

Isomura, M.

T. Matsui, C. W. Chang, T. Takada, M. Isomura, H. Fujiwara, and M. Kondo, “Microcrystalline Si1-xGex solar cells exhibiting enhanced infrared response with reduced absorber thickness,” Appl. Phys. Express1(3), 031501 (2008).
[CrossRef]

Jelenkovic, E. V.

E. V. Jelenković, K. Y. Tong, W. Y. Cheung, I. H. Wilson, S. P. Wong, and M. C. Poon, “Low temperature doping of poly-SiGe films with boron by co-sputtering,” Thin Solid Films368(1), 55–60 (2000).
[CrossRef]

Kalbitzer, S.

H. Shanks, C. J. Fang, L. Ley, M. Cardona, F. J. Demond, and S. Kalbitzer, “Infrared spectrum and structure of hydrogenated amorphous silicon,” Phys. Status Solidi, B Basic Res.100(1), 43–56 (1980).
[CrossRef]

Kastalsky, A.

S. Luryi, A. Kastalsky, and J. C. Bean, “New infrared detector on a silicon chip,” IEEE Trans. Electron. Dev.31(9), 1135–1139 (1984).
[CrossRef]

Knights, A. P.

Kondo, M.

T. Matsui, C. W. Chang, T. Takada, M. Isomura, H. Fujiwara, and M. Kondo, “Microcrystalline Si1-xGex solar cells exhibiting enhanced infrared response with reduced absorber thickness,” Appl. Phys. Express1(3), 031501 (2008).
[CrossRef]

Krause, M.

G. H. Bauer, F. Voigt, R. Carius, M. Krause, R. Bruggemann, and T. Unold, “Electronic properties of microcrystalline SiGe-thin films by hall-experiments and photo- and dark-transport,” J. Non-Cryst. Solids299–302(1), 153–157 (2002).
[CrossRef]

Kubis, A.

T. E. Vandervelde, K. Sun, J. L. Merz, A. Kubis, R. Hull, T. L. Pernell, and J. C. Bean, “The effect of two-temperature capping on germanium/silicon quantum dots and analysis of superlattices so composed,” J. Appl. Phys.99(12), 124301 (2006).
[CrossRef]

Kubis, A. J.

A. J. Kubis, T. E. Vandervelde, J. C. Bean, D. N. Dunn, and R. Hull, “Analysis of the three-dimensional ordering of epitaxial Ge quantum dots using focused ion beam tomography,” Appl. Phys. Lett.88(26), 263103 (2006).
[CrossRef]

Kumru, M.

M. Kumru, “A comparison of the optical, IR, electron spin resonance and conductivity properties of a-Ge1-xCx:H with a a-Ge:H and a-Ge thin films prepared by R.F. sputtering,” Thin Solid Films198(1–2), 75–84 (1991).
[CrossRef]

Kwon, I.

R. Biswas, I. Kwon, and C. M. Soukoulis, “Mechanism for the Staebler-Wronski effect in a-Si:H,” Phys. Rev. B Condens. Matter44(7), 3403–3406 (1991).
[CrossRef] [PubMed]

Lanford, W. A.

A. A. Langford, M. L. Fleet, B. P. Nelson, W. A. Lanford, and N. Maley, “Infrared absorption strength and hydrogen content of hydrogenated amorphous silicon,” Phys. Rev. B Condens. Matter45(23), 13367–13377 (1992).
[CrossRef] [PubMed]

Langford, A. A.

A. A. Langford, M. L. Fleet, B. P. Nelson, W. A. Lanford, and N. Maley, “Infrared absorption strength and hydrogen content of hydrogenated amorphous silicon,” Phys. Rev. B Condens. Matter45(23), 13367–13377 (1992).
[CrossRef] [PubMed]

Lee, C. T.

C. T. Lee, C. C. Lin, H. Y. Lee, and P. S. Chen, “Changes in surface state density due to chlorine treatment in GaN Schottky ultraviolet photodetectors,” J. Appl. Phys.103(9), 094504 (2008).
[CrossRef]

T. C. Tsai, L. Z. Yu, and C. T. Lee, “Electroluminescence emission of crystalline silicon nanoclusters grown at a low temperature,” Nanotechnology18(27), 275707 (2007).
[CrossRef]

C. T. Lee and H. Y. Lee, “Surface passivated function of GaAs MSM-PDs using photoelectrochemical oxidation method,” IEEE Photon. Technol. Lett.17(2), 462–464 (2005).
[CrossRef]

Lee, H. Y.

C. T. Lee, C. C. Lin, H. Y. Lee, and P. S. Chen, “Changes in surface state density due to chlorine treatment in GaN Schottky ultraviolet photodetectors,” J. Appl. Phys.103(9), 094504 (2008).
[CrossRef]

C. T. Lee and H. Y. Lee, “Surface passivated function of GaAs MSM-PDs using photoelectrochemical oxidation method,” IEEE Photon. Technol. Lett.17(2), 462–464 (2005).
[CrossRef]

Lee, M. L.

Ley, L.

H. Shanks, C. J. Fang, L. Ley, M. Cardona, F. J. Demond, and S. Kalbitzer, “Infrared spectrum and structure of hydrogenated amorphous silicon,” Phys. Status Solidi, B Basic Res.100(1), 43–56 (1980).
[CrossRef]

Lin, C. C.

C. T. Lee, C. C. Lin, H. Y. Lee, and P. S. Chen, “Changes in surface state density due to chlorine treatment in GaN Schottky ultraviolet photodetectors,” J. Appl. Phys.103(9), 094504 (2008).
[CrossRef]

Luryi, S.

S. Luryi, A. Kastalsky, and J. C. Bean, “New infrared detector on a silicon chip,” IEEE Trans. Electron. Dev.31(9), 1135–1139 (1984).
[CrossRef]

Lynch, R. T.

J. C. Bean, T. T. Sheng, L. C. Feldman, A. T. Fiory, and R. T. Lynch, “Pseudomorphic growth of GexSi1-x on silicon by molecular beam epitaxy,” Appl. Phys. Lett.44(1), 102–104 (1984).
[CrossRef]

Maley, N.

A. A. Langford, M. L. Fleet, B. P. Nelson, W. A. Lanford, and N. Maley, “Infrared absorption strength and hydrogen content of hydrogenated amorphous silicon,” Phys. Rev. B Condens. Matter45(23), 13367–13377 (1992).
[CrossRef] [PubMed]

Mascher, P.

Matsui, T.

T. Matsui, C. W. Chang, T. Takada, M. Isomura, H. Fujiwara, and M. Kondo, “Microcrystalline Si1-xGex solar cells exhibiting enhanced infrared response with reduced absorber thickness,” Appl. Phys. Express1(3), 031501 (2008).
[CrossRef]

McNamara, K. M.

K. M. McNamara, B. E. Williams, K. K. Gleason, and B. E. Scruggs, “Identification of defects and impurities in chemical-vapor deposited diamond through infrared,” J. Appl. Phys.76(4), 2466–2472 (1994).
[CrossRef]

Merz, J. L.

T. E. Vandervelde, K. Sun, J. L. Merz, A. Kubis, R. Hull, T. L. Pernell, and J. C. Bean, “The effect of two-temperature capping on germanium/silicon quantum dots and analysis of superlattices so composed,” J. Appl. Phys.99(12), 124301 (2006).
[CrossRef]

Milgram, J. N.

Mue, T. S.

Nelson, B. P.

A. A. Langford, M. L. Fleet, B. P. Nelson, W. A. Lanford, and N. Maley, “Infrared absorption strength and hydrogen content of hydrogenated amorphous silicon,” Phys. Rev. B Condens. Matter45(23), 13367–13377 (1992).
[CrossRef] [PubMed]

Nielsen, H. H.

W. B. Steward and H. H. Nielsen, “The Infrared absorption spectrum of germane,” Phys. Rev.48(11), 861–864 (1935).
[CrossRef]

W. B. Steward and H. H. Nielsen, “The Infrared absorption spectrum of silane,” Phys. Rev.47(11), 828–832 (1935).
[CrossRef]

Pernell, T. L.

T. E. Vandervelde, K. Sun, J. L. Merz, A. Kubis, R. Hull, T. L. Pernell, and J. C. Bean, “The effect of two-temperature capping on germanium/silicon quantum dots and analysis of superlattices so composed,” J. Appl. Phys.99(12), 124301 (2006).
[CrossRef]

Pirri, C. F.

D. Dasgupta, F. Demichelis, C. F. Pirri, and A. Tagliaferro, “π bands and gap states from optical absorption and electron-spin-resonance studies on amorphous carbon and amorphous hydrogenated carbon films,” Phys. Rev. B Condens. Matter43(3), 2131–2135 (1991).
[CrossRef] [PubMed]

Poon, M. C.

E. V. Jelenković, K. Y. Tong, W. Y. Cheung, I. H. Wilson, S. P. Wong, and M. C. Poon, “Low temperature doping of poly-SiGe films with boron by co-sputtering,” Thin Solid Films368(1), 55–60 (2000).
[CrossRef]

Razi, S.

Robinson, I. K.

A. T. Fiory, J. C. Bean, L. C. Feldman, and I. K. Robinson, “Commensurate and incommensurate structures in molecular beam epitaxially grown GexSi1-x films on Si(100),” J. Appl. Phys.56(4), 1227–1229 (1984).
[CrossRef]

Scruggs, B. E.

K. M. McNamara, B. E. Williams, K. K. Gleason, and B. E. Scruggs, “Identification of defects and impurities in chemical-vapor deposited diamond through infrared,” J. Appl. Phys.76(4), 2466–2472 (1994).
[CrossRef]

Shanks, H.

H. Shanks, C. J. Fang, L. Ley, M. Cardona, F. J. Demond, and S. Kalbitzer, “Infrared spectrum and structure of hydrogenated amorphous silicon,” Phys. Status Solidi, B Basic Res.100(1), 43–56 (1980).
[CrossRef]

Sheng, T. T.

J. C. Bean, T. T. Sheng, L. C. Feldman, A. T. Fiory, and R. T. Lynch, “Pseudomorphic growth of GexSi1-x on silicon by molecular beam epitaxy,” Appl. Phys. Lett.44(1), 102–104 (1984).
[CrossRef]

Sheu, J. K.

Soukoulis, C. M.

R. Biswas, I. Kwon, and C. M. Soukoulis, “Mechanism for the Staebler-Wronski effect in a-Si:H,” Phys. Rev. B Condens. Matter44(7), 3403–3406 (1991).
[CrossRef] [PubMed]

Steward, W. B.

W. B. Steward and H. H. Nielsen, “The Infrared absorption spectrum of germane,” Phys. Rev.48(11), 861–864 (1935).
[CrossRef]

W. B. Steward and H. H. Nielsen, “The Infrared absorption spectrum of silane,” Phys. Rev.47(11), 828–832 (1935).
[CrossRef]

Sun, K.

T. E. Vandervelde, K. Sun, J. L. Merz, A. Kubis, R. Hull, T. L. Pernell, and J. C. Bean, “The effect of two-temperature capping on germanium/silicon quantum dots and analysis of superlattices so composed,” J. Appl. Phys.99(12), 124301 (2006).
[CrossRef]

Tagliaferro, A.

D. Dasgupta, F. Demichelis, C. F. Pirri, and A. Tagliaferro, “π bands and gap states from optical absorption and electron-spin-resonance studies on amorphous carbon and amorphous hydrogenated carbon films,” Phys. Rev. B Condens. Matter43(3), 2131–2135 (1991).
[CrossRef] [PubMed]

Takada, T.

T. Matsui, C. W. Chang, T. Takada, M. Isomura, H. Fujiwara, and M. Kondo, “Microcrystalline Si1-xGex solar cells exhibiting enhanced infrared response with reduced absorber thickness,” Appl. Phys. Express1(3), 031501 (2008).
[CrossRef]

Teh, L. K.

L. K. Teh, W. K. Choi, L. K. Bera, and W. K. Chim, “Structural characterization of polycrystalline SiGe thin film,” Solid-State Electron.45(11), 1963–1966 (2001).
[CrossRef]

Tong, K. Y.

E. V. Jelenković, K. Y. Tong, W. Y. Cheung, I. H. Wilson, S. P. Wong, and M. C. Poon, “Low temperature doping of poly-SiGe films with boron by co-sputtering,” Thin Solid Films368(1), 55–60 (2000).
[CrossRef]

Tsai, T. C.

T. C. Tsai, L. Z. Yu, and C. T. Lee, “Electroluminescence emission of crystalline silicon nanoclusters grown at a low temperature,” Nanotechnology18(27), 275707 (2007).
[CrossRef]

Unold, T.

G. H. Bauer, F. Voigt, R. Carius, M. Krause, R. Bruggemann, and T. Unold, “Electronic properties of microcrystalline SiGe-thin films by hall-experiments and photo- and dark-transport,” J. Non-Cryst. Solids299–302(1), 153–157 (2002).
[CrossRef]

Vandervelde, T. E.

A. J. Kubis, T. E. Vandervelde, J. C. Bean, D. N. Dunn, and R. Hull, “Analysis of the three-dimensional ordering of epitaxial Ge quantum dots using focused ion beam tomography,” Appl. Phys. Lett.88(26), 263103 (2006).
[CrossRef]

T. E. Vandervelde, K. Sun, J. L. Merz, A. Kubis, R. Hull, T. L. Pernell, and J. C. Bean, “The effect of two-temperature capping on germanium/silicon quantum dots and analysis of superlattices so composed,” J. Appl. Phys.99(12), 124301 (2006).
[CrossRef]

Voigt, F.

G. H. Bauer, F. Voigt, R. Carius, M. Krause, R. Bruggemann, and T. Unold, “Electronic properties of microcrystalline SiGe-thin films by hall-experiments and photo- and dark-transport,” J. Non-Cryst. Solids299–302(1), 153–157 (2002).
[CrossRef]

Wagner, H.

M. A. Ghazala, W. Beyer, and H. Wagner, “Long-term stability of hydrogenated amorphous germanium measured by infrared absorption,” J. Appl. Phys.70(8), 4540–4543 (1991).
[CrossRef]

Williams, B. E.

K. M. McNamara, B. E. Williams, K. K. Gleason, and B. E. Scruggs, “Identification of defects and impurities in chemical-vapor deposited diamond through infrared,” J. Appl. Phys.76(4), 2466–2472 (1994).
[CrossRef]

Wilson, I. H.

E. V. Jelenković, K. Y. Tong, W. Y. Cheung, I. H. Wilson, S. P. Wong, and M. C. Poon, “Low temperature doping of poly-SiGe films with boron by co-sputtering,” Thin Solid Films368(1), 55–60 (2000).
[CrossRef]

Wojcik, J.

Wong, S. P.

E. V. Jelenković, K. Y. Tong, W. Y. Cheung, I. H. Wilson, S. P. Wong, and M. C. Poon, “Low temperature doping of poly-SiGe films with boron by co-sputtering,” Thin Solid Films368(1), 55–60 (2000).
[CrossRef]

Yang, J. H.

Yu, L. Z.

T. C. Tsai, L. Z. Yu, and C. T. Lee, “Electroluminescence emission of crystalline silicon nanoclusters grown at a low temperature,” Nanotechnology18(27), 275707 (2007).
[CrossRef]

Appl. Phys. Express

T. Matsui, C. W. Chang, T. Takada, M. Isomura, H. Fujiwara, and M. Kondo, “Microcrystalline Si1-xGex solar cells exhibiting enhanced infrared response with reduced absorber thickness,” Appl. Phys. Express1(3), 031501 (2008).
[CrossRef]

Appl. Phys. Lett.

J. C. Bean, T. T. Sheng, L. C. Feldman, A. T. Fiory, and R. T. Lynch, “Pseudomorphic growth of GexSi1-x on silicon by molecular beam epitaxy,” Appl. Phys. Lett.44(1), 102–104 (1984).
[CrossRef]

A. J. Kubis, T. E. Vandervelde, J. C. Bean, D. N. Dunn, and R. Hull, “Analysis of the three-dimensional ordering of epitaxial Ge quantum dots using focused ion beam tomography,” Appl. Phys. Lett.88(26), 263103 (2006).
[CrossRef]

IEEE Photon. Technol. Lett.

C. T. Lee and H. Y. Lee, “Surface passivated function of GaAs MSM-PDs using photoelectrochemical oxidation method,” IEEE Photon. Technol. Lett.17(2), 462–464 (2005).
[CrossRef]

IEEE Trans. Electron. Dev.

S. Luryi, A. Kastalsky, and J. C. Bean, “New infrared detector on a silicon chip,” IEEE Trans. Electron. Dev.31(9), 1135–1139 (1984).
[CrossRef]

J. Appl. Phys.

A. T. Fiory, J. C. Bean, L. C. Feldman, and I. K. Robinson, “Commensurate and incommensurate structures in molecular beam epitaxially grown GexSi1-x films on Si(100),” J. Appl. Phys.56(4), 1227–1229 (1984).
[CrossRef]

T. E. Vandervelde, K. Sun, J. L. Merz, A. Kubis, R. Hull, T. L. Pernell, and J. C. Bean, “The effect of two-temperature capping on germanium/silicon quantum dots and analysis of superlattices so composed,” J. Appl. Phys.99(12), 124301 (2006).
[CrossRef]

C. T. Lee, C. C. Lin, H. Y. Lee, and P. S. Chen, “Changes in surface state density due to chlorine treatment in GaN Schottky ultraviolet photodetectors,” J. Appl. Phys.103(9), 094504 (2008).
[CrossRef]

M. A. Ghazala, W. Beyer, and H. Wagner, “Long-term stability of hydrogenated amorphous germanium measured by infrared absorption,” J. Appl. Phys.70(8), 4540–4543 (1991).
[CrossRef]

K. M. McNamara, B. E. Williams, K. K. Gleason, and B. E. Scruggs, “Identification of defects and impurities in chemical-vapor deposited diamond through infrared,” J. Appl. Phys.76(4), 2466–2472 (1994).
[CrossRef]

J. Non-Cryst. Solids

G. H. Bauer, F. Voigt, R. Carius, M. Krause, R. Bruggemann, and T. Unold, “Electronic properties of microcrystalline SiGe-thin films by hall-experiments and photo- and dark-transport,” J. Non-Cryst. Solids299–302(1), 153–157 (2002).
[CrossRef]

Nanotechnology

T. C. Tsai, L. Z. Yu, and C. T. Lee, “Electroluminescence emission of crystalline silicon nanoclusters grown at a low temperature,” Nanotechnology18(27), 275707 (2007).
[CrossRef]

Opt. Express

Phys. Rev.

W. B. Steward and H. H. Nielsen, “The Infrared absorption spectrum of silane,” Phys. Rev.47(11), 828–832 (1935).
[CrossRef]

W. B. Steward and H. H. Nielsen, “The Infrared absorption spectrum of germane,” Phys. Rev.48(11), 861–864 (1935).
[CrossRef]

Phys. Rev. B Condens. Matter

R. Biswas, I. Kwon, and C. M. Soukoulis, “Mechanism for the Staebler-Wronski effect in a-Si:H,” Phys. Rev. B Condens. Matter44(7), 3403–3406 (1991).
[CrossRef] [PubMed]

D. Dasgupta, F. Demichelis, C. F. Pirri, and A. Tagliaferro, “π bands and gap states from optical absorption and electron-spin-resonance studies on amorphous carbon and amorphous hydrogenated carbon films,” Phys. Rev. B Condens. Matter43(3), 2131–2135 (1991).
[CrossRef] [PubMed]

A. A. Langford, M. L. Fleet, B. P. Nelson, W. A. Lanford, and N. Maley, “Infrared absorption strength and hydrogen content of hydrogenated amorphous silicon,” Phys. Rev. B Condens. Matter45(23), 13367–13377 (1992).
[CrossRef] [PubMed]

Phys. Status Solidi, B Basic Res.

H. Shanks, C. J. Fang, L. Ley, M. Cardona, F. J. Demond, and S. Kalbitzer, “Infrared spectrum and structure of hydrogenated amorphous silicon,” Phys. Status Solidi, B Basic Res.100(1), 43–56 (1980).
[CrossRef]

Science

J. C. Bean, “Strained-layer epitaxy of germanium-silicon alloys,” Science230(4722), 127–131 (1985).
[CrossRef] [PubMed]

Solid-State Electron.

L. K. Teh, W. K. Choi, L. K. Bera, and W. K. Chim, “Structural characterization of polycrystalline SiGe thin film,” Solid-State Electron.45(11), 1963–1966 (2001).
[CrossRef]

Thin Solid Films

M. Kumru, “A comparison of the optical, IR, electron spin resonance and conductivity properties of a-Ge1-xCx:H with a a-Ge:H and a-Ge thin films prepared by R.F. sputtering,” Thin Solid Films198(1–2), 75–84 (1991).
[CrossRef]

E. V. Jelenković, K. Y. Tong, W. Y. Cheung, I. H. Wilson, S. P. Wong, and M. C. Poon, “Low temperature doping of poly-SiGe films with boron by co-sputtering,” Thin Solid Films368(1), 55–60 (2000).
[CrossRef]

Other

X. Cao, H. S. Povolny, and X. Deng, “Hot-wire deposition of hydrogenated nanocrystalline SiGe films for thin-film Si based solar cells,” in Record of the IEEE Photovoltaic Specialists Conf. (2005), pp. 1500–1503.

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Figures (7)

Fig. 1
Fig. 1

The schematic configuration of the p-Si/i-SiGe/n-Si near-infrared photodetectors.

Fig. 2
Fig. 2

The X-ray diffraction patterns of the SiGe films deposited by various laser assistance powers.

Fig. 3
Fig. 3

(a) High-resolution transmission electron microscopy image and (b) selective area electron diffraction pattern of laser-assisted SiGe films.

Fig. 4
Fig. 4

Absorption coefficient as a function of photon energy for various SiGe films.

Fig. 5
Fig. 5

(a) Si-H bonds and (b) Ge-H bonds bonding configuration of various SiGe films before and after light- soaking.

Fig. 6
Fig. 6

The dark current as a function of the reverse bias voltage for various SiGe films.

Fig. 7
Fig. 7

(a) The photoresponsivity and (b) the spectral quantum efficiency of the p-Si/i-SiGe/n-Si near-infrared photodetectors with various SiGe films.

Tables (3)

Tables Icon

Table 1 Electrical Properties of SiGe Films Deposited by Various CO2 Laser Powers

Tables Icon

Table 2 Contents and Optical Energy Bandgap of the SiGe Films Deposited by Various CO2 Laser Powers

Tables Icon

Table 3 Hydrogen Concentration of Various SiGe Films Without and With Light Soak

Equations (5)

Equations on this page are rendered with MathJax. Learn more.

B=Kλ/Dcosθ.
α(hν)hν=C ( hν E opt ) 2 .
N H =A α(ω) ω 1 dω .
R= I ph ( A )/ P o (W).
η= I ph /e P 0 /hν .

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