Abstract

The SiH4 and GeH4 reactant gases used for depositing microcrystalline SiGe films could be simultaneously decomposed when acted cooperatively on the plasma and the assistant CO2 laser in the laser-assisted plasma enhanced chemical vapor deposition system. The carrier mobility of the 80 W laser-assisted SiGe films was significantly increased to 66.8 cm2/V-s compared with 2.22 cm2/V-s of the non-laser-assisted SiGe films. The performances of the resulting p-Si/i-SiGe/n-Si near-infrared photodetectors were improved due to the high quality and high carrier mobility of the laser-assisted SiGe films. The maximum photoresponsivity and the maximum quantum efficiency of the photodetectors with 80 W laser-assisted SiGe films were respectively improved to 0.47 A/W and 68.5% in comparison with 0.31 A/W and 46.5% of the photodetectors with non-laser-assisted SiGe films.

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    [CrossRef] [PubMed]
  24. K. M. McNamara, B. E. Williams, K. K. Gleason, and B. E. Scruggs, “Identification of defects and impurities in chemical-vapor deposited diamond through infrared,” J. Appl. Phys. 76(4), 2466–2472 (1994).
    [CrossRef]
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    [CrossRef]
  26. M. Kumru, “A comparison of the optical, IR, electron spin resonance and conductivity properties of a-Ge1-xCx:H with a a-Ge:H and a-Ge thin films prepared by R.F. sputtering,” Thin Solid Films 198(1–2), 75–84 (1991).
    [CrossRef]

2011 (1)

2010 (1)

2008 (2)

C. T. Lee, C. C. Lin, H. Y. Lee, and P. S. Chen, “Changes in surface state density due to chlorine treatment in GaN Schottky ultraviolet photodetectors,” J. Appl. Phys. 103(9), 094504 (2008).
[CrossRef]

T. Matsui, C. W. Chang, T. Takada, M. Isomura, H. Fujiwara, and M. Kondo, “Microcrystalline Si1-xGex solar cells exhibiting enhanced infrared response with reduced absorber thickness,” Appl. Phys. Express 1(3), 031501 (2008).
[CrossRef]

2007 (2)

T. C. Tsai, L. Z. Yu, and C. T. Lee, “Electroluminescence emission of crystalline silicon nanoclusters grown at a low temperature,” Nanotechnology 18(27), 275707 (2007).
[CrossRef]

J. N. Milgram, J. Wojcik, P. Mascher, and A. P. Knights, “Optically pumped Si nanocrystal emitter integrated with low loss silicon nitride waveguides,” Opt. Express 15(22), 14679–14688 (2007).
[CrossRef] [PubMed]

2006 (2)

T. E. Vandervelde, K. Sun, J. L. Merz, A. Kubis, R. Hull, T. L. Pernell, and J. C. Bean, “The effect of two-temperature capping on germanium/silicon quantum dots and analysis of superlattices so composed,” J. Appl. Phys. 99(12), 124301 (2006).
[CrossRef]

A. J. Kubis, T. E. Vandervelde, J. C. Bean, D. N. Dunn, and R. Hull, “Analysis of the three-dimensional ordering of epitaxial Ge quantum dots using focused ion beam tomography,” Appl. Phys. Lett. 88(26), 263103 (2006).
[CrossRef]

2005 (1)

C. T. Lee and H. Y. Lee, “Surface passivated function of GaAs MSM-PDs using photoelectrochemical oxidation method,” IEEE Photon. Technol. Lett. 17(2), 462–464 (2005).
[CrossRef]

2002 (1)

G. H. Bauer, F. Voigt, R. Carius, M. Krause, R. Bruggemann, and T. Unold, “Electronic properties of microcrystalline SiGe-thin films by hall-experiments and photo- and dark-transport,” J. Non-Cryst. Solids 299–302(1), 153–157 (2002).
[CrossRef]

2001 (1)

L. K. Teh, W. K. Choi, L. K. Bera, and W. K. Chim, “Structural characterization of polycrystalline SiGe thin film,” Solid-State Electron. 45(11), 1963–1966 (2001).
[CrossRef]

2000 (1)

E. V. Jelenković, K. Y. Tong, W. Y. Cheung, I. H. Wilson, S. P. Wong, and M. C. Poon, “Low temperature doping of poly-SiGe films with boron by co-sputtering,” Thin Solid Films 368(1), 55–60 (2000).
[CrossRef]

1994 (1)

K. M. McNamara, B. E. Williams, K. K. Gleason, and B. E. Scruggs, “Identification of defects and impurities in chemical-vapor deposited diamond through infrared,” J. Appl. Phys. 76(4), 2466–2472 (1994).
[CrossRef]

1992 (1)

A. A. Langford, M. L. Fleet, B. P. Nelson, W. A. Lanford, and N. Maley, “Infrared absorption strength and hydrogen content of hydrogenated amorphous silicon,” Phys. Rev. B Condens. Matter 45(23), 13367–13377 (1992).
[CrossRef] [PubMed]

1991 (4)

M. Kumru, “A comparison of the optical, IR, electron spin resonance and conductivity properties of a-Ge1-xCx:H with a a-Ge:H and a-Ge thin films prepared by R.F. sputtering,” Thin Solid Films 198(1–2), 75–84 (1991).
[CrossRef]

D. Dasgupta, F. Demichelis, C. F. Pirri, and A. Tagliaferro, “π bands and gap states from optical absorption and electron-spin-resonance studies on amorphous carbon and amorphous hydrogenated carbon films,” Phys. Rev. B Condens. Matter 43(3), 2131–2135 (1991).
[CrossRef] [PubMed]

M. A. Ghazala, W. Beyer, and H. Wagner, “Long-term stability of hydrogenated amorphous germanium measured by infrared absorption,” J. Appl. Phys. 70(8), 4540–4543 (1991).
[CrossRef]

R. Biswas, I. Kwon, and C. M. Soukoulis, “Mechanism for the Staebler-Wronski effect in a-Si:H,” Phys. Rev. B Condens. Matter 44(7), 3403–3406 (1991).
[CrossRef] [PubMed]

1985 (1)

J. C. Bean, “Strained-layer epitaxy of germanium-silicon alloys,” Science 230(4722), 127–131 (1985).
[CrossRef] [PubMed]

1984 (3)

J. C. Bean, T. T. Sheng, L. C. Feldman, A. T. Fiory, and R. T. Lynch, “Pseudomorphic growth of GexSi1-x on silicon by molecular beam epitaxy,” Appl. Phys. Lett. 44(1), 102–104 (1984).
[CrossRef]

A. T. Fiory, J. C. Bean, L. C. Feldman, and I. K. Robinson, “Commensurate and incommensurate structures in molecular beam epitaxially grown GexSi1-x films on Si(100),” J. Appl. Phys. 56(4), 1227–1229 (1984).
[CrossRef]

S. Luryi, A. Kastalsky, and J. C. Bean, “New infrared detector on a silicon chip,” IEEE Trans. Electron. Dev. 31(9), 1135–1139 (1984).
[CrossRef]

1980 (1)

H. Shanks, C. J. Fang, L. Ley, M. Cardona, F. J. Demond, and S. Kalbitzer, “Infrared spectrum and structure of hydrogenated amorphous silicon,” Phys. Status Solidi, B Basic Res. 100(1), 43–56 (1980).
[CrossRef]

1935 (2)

W. B. Steward and H. H. Nielsen, “The Infrared absorption spectrum of silane,” Phys. Rev. 47(11), 828–832 (1935).
[CrossRef]

W. B. Steward and H. H. Nielsen, “The Infrared absorption spectrum of germane,” Phys. Rev. 48(11), 861–864 (1935).
[CrossRef]

Asgari, A.

Bauer, G. H.

G. H. Bauer, F. Voigt, R. Carius, M. Krause, R. Bruggemann, and T. Unold, “Electronic properties of microcrystalline SiGe-thin films by hall-experiments and photo- and dark-transport,” J. Non-Cryst. Solids 299–302(1), 153–157 (2002).
[CrossRef]

Bean, J. C.

A. J. Kubis, T. E. Vandervelde, J. C. Bean, D. N. Dunn, and R. Hull, “Analysis of the three-dimensional ordering of epitaxial Ge quantum dots using focused ion beam tomography,” Appl. Phys. Lett. 88(26), 263103 (2006).
[CrossRef]

T. E. Vandervelde, K. Sun, J. L. Merz, A. Kubis, R. Hull, T. L. Pernell, and J. C. Bean, “The effect of two-temperature capping on germanium/silicon quantum dots and analysis of superlattices so composed,” J. Appl. Phys. 99(12), 124301 (2006).
[CrossRef]

J. C. Bean, “Strained-layer epitaxy of germanium-silicon alloys,” Science 230(4722), 127–131 (1985).
[CrossRef] [PubMed]

A. T. Fiory, J. C. Bean, L. C. Feldman, and I. K. Robinson, “Commensurate and incommensurate structures in molecular beam epitaxially grown GexSi1-x films on Si(100),” J. Appl. Phys. 56(4), 1227–1229 (1984).
[CrossRef]

S. Luryi, A. Kastalsky, and J. C. Bean, “New infrared detector on a silicon chip,” IEEE Trans. Electron. Dev. 31(9), 1135–1139 (1984).
[CrossRef]

J. C. Bean, T. T. Sheng, L. C. Feldman, A. T. Fiory, and R. T. Lynch, “Pseudomorphic growth of GexSi1-x on silicon by molecular beam epitaxy,” Appl. Phys. Lett. 44(1), 102–104 (1984).
[CrossRef]

Bera, L. K.

L. K. Teh, W. K. Choi, L. K. Bera, and W. K. Chim, “Structural characterization of polycrystalline SiGe thin film,” Solid-State Electron. 45(11), 1963–1966 (2001).
[CrossRef]

Beyer, W.

M. A. Ghazala, W. Beyer, and H. Wagner, “Long-term stability of hydrogenated amorphous germanium measured by infrared absorption,” J. Appl. Phys. 70(8), 4540–4543 (1991).
[CrossRef]

Biswas, R.

R. Biswas, I. Kwon, and C. M. Soukoulis, “Mechanism for the Staebler-Wronski effect in a-Si:H,” Phys. Rev. B Condens. Matter 44(7), 3403–3406 (1991).
[CrossRef] [PubMed]

Bruggemann, R.

G. H. Bauer, F. Voigt, R. Carius, M. Krause, R. Bruggemann, and T. Unold, “Electronic properties of microcrystalline SiGe-thin films by hall-experiments and photo- and dark-transport,” J. Non-Cryst. Solids 299–302(1), 153–157 (2002).
[CrossRef]

Cardona, M.

H. Shanks, C. J. Fang, L. Ley, M. Cardona, F. J. Demond, and S. Kalbitzer, “Infrared spectrum and structure of hydrogenated amorphous silicon,” Phys. Status Solidi, B Basic Res. 100(1), 43–56 (1980).
[CrossRef]

Carius, R.

G. H. Bauer, F. Voigt, R. Carius, M. Krause, R. Bruggemann, and T. Unold, “Electronic properties of microcrystalline SiGe-thin films by hall-experiments and photo- and dark-transport,” J. Non-Cryst. Solids 299–302(1), 153–157 (2002).
[CrossRef]

Chang, C. W.

T. Matsui, C. W. Chang, T. Takada, M. Isomura, H. Fujiwara, and M. Kondo, “Microcrystalline Si1-xGex solar cells exhibiting enhanced infrared response with reduced absorber thickness,” Appl. Phys. Express 1(3), 031501 (2008).
[CrossRef]

Chen, P. S.

C. T. Lee, C. C. Lin, H. Y. Lee, and P. S. Chen, “Changes in surface state density due to chlorine treatment in GaN Schottky ultraviolet photodetectors,” J. Appl. Phys. 103(9), 094504 (2008).
[CrossRef]

Cheung, W. Y.

E. V. Jelenković, K. Y. Tong, W. Y. Cheung, I. H. Wilson, S. P. Wong, and M. C. Poon, “Low temperature doping of poly-SiGe films with boron by co-sputtering,” Thin Solid Films 368(1), 55–60 (2000).
[CrossRef]

Chim, W. K.

L. K. Teh, W. K. Choi, L. K. Bera, and W. K. Chim, “Structural characterization of polycrystalline SiGe thin film,” Solid-State Electron. 45(11), 1963–1966 (2001).
[CrossRef]

Choi, W. K.

L. K. Teh, W. K. Choi, L. K. Bera, and W. K. Chim, “Structural characterization of polycrystalline SiGe thin film,” Solid-State Electron. 45(11), 1963–1966 (2001).
[CrossRef]

Dasgupta, D.

D. Dasgupta, F. Demichelis, C. F. Pirri, and A. Tagliaferro, “π bands and gap states from optical absorption and electron-spin-resonance studies on amorphous carbon and amorphous hydrogenated carbon films,” Phys. Rev. B Condens. Matter 43(3), 2131–2135 (1991).
[CrossRef] [PubMed]

Demichelis, F.

D. Dasgupta, F. Demichelis, C. F. Pirri, and A. Tagliaferro, “π bands and gap states from optical absorption and electron-spin-resonance studies on amorphous carbon and amorphous hydrogenated carbon films,” Phys. Rev. B Condens. Matter 43(3), 2131–2135 (1991).
[CrossRef] [PubMed]

Demond, F. J.

H. Shanks, C. J. Fang, L. Ley, M. Cardona, F. J. Demond, and S. Kalbitzer, “Infrared spectrum and structure of hydrogenated amorphous silicon,” Phys. Status Solidi, B Basic Res. 100(1), 43–56 (1980).
[CrossRef]

Dunn, D. N.

A. J. Kubis, T. E. Vandervelde, J. C. Bean, D. N. Dunn, and R. Hull, “Analysis of the three-dimensional ordering of epitaxial Ge quantum dots using focused ion beam tomography,” Appl. Phys. Lett. 88(26), 263103 (2006).
[CrossRef]

Fang, C. J.

H. Shanks, C. J. Fang, L. Ley, M. Cardona, F. J. Demond, and S. Kalbitzer, “Infrared spectrum and structure of hydrogenated amorphous silicon,” Phys. Status Solidi, B Basic Res. 100(1), 43–56 (1980).
[CrossRef]

Feldman, L. C.

A. T. Fiory, J. C. Bean, L. C. Feldman, and I. K. Robinson, “Commensurate and incommensurate structures in molecular beam epitaxially grown GexSi1-x films on Si(100),” J. Appl. Phys. 56(4), 1227–1229 (1984).
[CrossRef]

J. C. Bean, T. T. Sheng, L. C. Feldman, A. T. Fiory, and R. T. Lynch, “Pseudomorphic growth of GexSi1-x on silicon by molecular beam epitaxy,” Appl. Phys. Lett. 44(1), 102–104 (1984).
[CrossRef]

Fiory, A. T.

J. C. Bean, T. T. Sheng, L. C. Feldman, A. T. Fiory, and R. T. Lynch, “Pseudomorphic growth of GexSi1-x on silicon by molecular beam epitaxy,” Appl. Phys. Lett. 44(1), 102–104 (1984).
[CrossRef]

A. T. Fiory, J. C. Bean, L. C. Feldman, and I. K. Robinson, “Commensurate and incommensurate structures in molecular beam epitaxially grown GexSi1-x films on Si(100),” J. Appl. Phys. 56(4), 1227–1229 (1984).
[CrossRef]

Fleet, M. L.

A. A. Langford, M. L. Fleet, B. P. Nelson, W. A. Lanford, and N. Maley, “Infrared absorption strength and hydrogen content of hydrogenated amorphous silicon,” Phys. Rev. B Condens. Matter 45(23), 13367–13377 (1992).
[CrossRef] [PubMed]

Fujiwara, H.

T. Matsui, C. W. Chang, T. Takada, M. Isomura, H. Fujiwara, and M. Kondo, “Microcrystalline Si1-xGex solar cells exhibiting enhanced infrared response with reduced absorber thickness,” Appl. Phys. Express 1(3), 031501 (2008).
[CrossRef]

Ghazala, M. A.

M. A. Ghazala, W. Beyer, and H. Wagner, “Long-term stability of hydrogenated amorphous germanium measured by infrared absorption,” J. Appl. Phys. 70(8), 4540–4543 (1991).
[CrossRef]

Gleason, K. K.

K. M. McNamara, B. E. Williams, K. K. Gleason, and B. E. Scruggs, “Identification of defects and impurities in chemical-vapor deposited diamond through infrared,” J. Appl. Phys. 76(4), 2466–2472 (1994).
[CrossRef]

Huang, F. W.

Hull, R.

T. E. Vandervelde, K. Sun, J. L. Merz, A. Kubis, R. Hull, T. L. Pernell, and J. C. Bean, “The effect of two-temperature capping on germanium/silicon quantum dots and analysis of superlattices so composed,” J. Appl. Phys. 99(12), 124301 (2006).
[CrossRef]

A. J. Kubis, T. E. Vandervelde, J. C. Bean, D. N. Dunn, and R. Hull, “Analysis of the three-dimensional ordering of epitaxial Ge quantum dots using focused ion beam tomography,” Appl. Phys. Lett. 88(26), 263103 (2006).
[CrossRef]

Isomura, M.

T. Matsui, C. W. Chang, T. Takada, M. Isomura, H. Fujiwara, and M. Kondo, “Microcrystalline Si1-xGex solar cells exhibiting enhanced infrared response with reduced absorber thickness,” Appl. Phys. Express 1(3), 031501 (2008).
[CrossRef]

Jelenkovic, E. V.

E. V. Jelenković, K. Y. Tong, W. Y. Cheung, I. H. Wilson, S. P. Wong, and M. C. Poon, “Low temperature doping of poly-SiGe films with boron by co-sputtering,” Thin Solid Films 368(1), 55–60 (2000).
[CrossRef]

Kalbitzer, S.

H. Shanks, C. J. Fang, L. Ley, M. Cardona, F. J. Demond, and S. Kalbitzer, “Infrared spectrum and structure of hydrogenated amorphous silicon,” Phys. Status Solidi, B Basic Res. 100(1), 43–56 (1980).
[CrossRef]

Kastalsky, A.

S. Luryi, A. Kastalsky, and J. C. Bean, “New infrared detector on a silicon chip,” IEEE Trans. Electron. Dev. 31(9), 1135–1139 (1984).
[CrossRef]

Knights, A. P.

Kondo, M.

T. Matsui, C. W. Chang, T. Takada, M. Isomura, H. Fujiwara, and M. Kondo, “Microcrystalline Si1-xGex solar cells exhibiting enhanced infrared response with reduced absorber thickness,” Appl. Phys. Express 1(3), 031501 (2008).
[CrossRef]

Krause, M.

G. H. Bauer, F. Voigt, R. Carius, M. Krause, R. Bruggemann, and T. Unold, “Electronic properties of microcrystalline SiGe-thin films by hall-experiments and photo- and dark-transport,” J. Non-Cryst. Solids 299–302(1), 153–157 (2002).
[CrossRef]

Kubis, A.

T. E. Vandervelde, K. Sun, J. L. Merz, A. Kubis, R. Hull, T. L. Pernell, and J. C. Bean, “The effect of two-temperature capping on germanium/silicon quantum dots and analysis of superlattices so composed,” J. Appl. Phys. 99(12), 124301 (2006).
[CrossRef]

Kubis, A. J.

A. J. Kubis, T. E. Vandervelde, J. C. Bean, D. N. Dunn, and R. Hull, “Analysis of the three-dimensional ordering of epitaxial Ge quantum dots using focused ion beam tomography,” Appl. Phys. Lett. 88(26), 263103 (2006).
[CrossRef]

Kumru, M.

M. Kumru, “A comparison of the optical, IR, electron spin resonance and conductivity properties of a-Ge1-xCx:H with a a-Ge:H and a-Ge thin films prepared by R.F. sputtering,” Thin Solid Films 198(1–2), 75–84 (1991).
[CrossRef]

Kwon, I.

R. Biswas, I. Kwon, and C. M. Soukoulis, “Mechanism for the Staebler-Wronski effect in a-Si:H,” Phys. Rev. B Condens. Matter 44(7), 3403–3406 (1991).
[CrossRef] [PubMed]

Lanford, W. A.

A. A. Langford, M. L. Fleet, B. P. Nelson, W. A. Lanford, and N. Maley, “Infrared absorption strength and hydrogen content of hydrogenated amorphous silicon,” Phys. Rev. B Condens. Matter 45(23), 13367–13377 (1992).
[CrossRef] [PubMed]

Langford, A. A.

A. A. Langford, M. L. Fleet, B. P. Nelson, W. A. Lanford, and N. Maley, “Infrared absorption strength and hydrogen content of hydrogenated amorphous silicon,” Phys. Rev. B Condens. Matter 45(23), 13367–13377 (1992).
[CrossRef] [PubMed]

Lee, C. T.

C. T. Lee, C. C. Lin, H. Y. Lee, and P. S. Chen, “Changes in surface state density due to chlorine treatment in GaN Schottky ultraviolet photodetectors,” J. Appl. Phys. 103(9), 094504 (2008).
[CrossRef]

T. C. Tsai, L. Z. Yu, and C. T. Lee, “Electroluminescence emission of crystalline silicon nanoclusters grown at a low temperature,” Nanotechnology 18(27), 275707 (2007).
[CrossRef]

C. T. Lee and H. Y. Lee, “Surface passivated function of GaAs MSM-PDs using photoelectrochemical oxidation method,” IEEE Photon. Technol. Lett. 17(2), 462–464 (2005).
[CrossRef]

Lee, H. Y.

C. T. Lee, C. C. Lin, H. Y. Lee, and P. S. Chen, “Changes in surface state density due to chlorine treatment in GaN Schottky ultraviolet photodetectors,” J. Appl. Phys. 103(9), 094504 (2008).
[CrossRef]

C. T. Lee and H. Y. Lee, “Surface passivated function of GaAs MSM-PDs using photoelectrochemical oxidation method,” IEEE Photon. Technol. Lett. 17(2), 462–464 (2005).
[CrossRef]

Lee, M. L.

Ley, L.

H. Shanks, C. J. Fang, L. Ley, M. Cardona, F. J. Demond, and S. Kalbitzer, “Infrared spectrum and structure of hydrogenated amorphous silicon,” Phys. Status Solidi, B Basic Res. 100(1), 43–56 (1980).
[CrossRef]

Lin, C. C.

C. T. Lee, C. C. Lin, H. Y. Lee, and P. S. Chen, “Changes in surface state density due to chlorine treatment in GaN Schottky ultraviolet photodetectors,” J. Appl. Phys. 103(9), 094504 (2008).
[CrossRef]

Luryi, S.

S. Luryi, A. Kastalsky, and J. C. Bean, “New infrared detector on a silicon chip,” IEEE Trans. Electron. Dev. 31(9), 1135–1139 (1984).
[CrossRef]

Lynch, R. T.

J. C. Bean, T. T. Sheng, L. C. Feldman, A. T. Fiory, and R. T. Lynch, “Pseudomorphic growth of GexSi1-x on silicon by molecular beam epitaxy,” Appl. Phys. Lett. 44(1), 102–104 (1984).
[CrossRef]

Maley, N.

A. A. Langford, M. L. Fleet, B. P. Nelson, W. A. Lanford, and N. Maley, “Infrared absorption strength and hydrogen content of hydrogenated amorphous silicon,” Phys. Rev. B Condens. Matter 45(23), 13367–13377 (1992).
[CrossRef] [PubMed]

Mascher, P.

Matsui, T.

T. Matsui, C. W. Chang, T. Takada, M. Isomura, H. Fujiwara, and M. Kondo, “Microcrystalline Si1-xGex solar cells exhibiting enhanced infrared response with reduced absorber thickness,” Appl. Phys. Express 1(3), 031501 (2008).
[CrossRef]

McNamara, K. M.

K. M. McNamara, B. E. Williams, K. K. Gleason, and B. E. Scruggs, “Identification of defects and impurities in chemical-vapor deposited diamond through infrared,” J. Appl. Phys. 76(4), 2466–2472 (1994).
[CrossRef]

Merz, J. L.

T. E. Vandervelde, K. Sun, J. L. Merz, A. Kubis, R. Hull, T. L. Pernell, and J. C. Bean, “The effect of two-temperature capping on germanium/silicon quantum dots and analysis of superlattices so composed,” J. Appl. Phys. 99(12), 124301 (2006).
[CrossRef]

Milgram, J. N.

Mue, T. S.

Nelson, B. P.

A. A. Langford, M. L. Fleet, B. P. Nelson, W. A. Lanford, and N. Maley, “Infrared absorption strength and hydrogen content of hydrogenated amorphous silicon,” Phys. Rev. B Condens. Matter 45(23), 13367–13377 (1992).
[CrossRef] [PubMed]

Nielsen, H. H.

W. B. Steward and H. H. Nielsen, “The Infrared absorption spectrum of silane,” Phys. Rev. 47(11), 828–832 (1935).
[CrossRef]

W. B. Steward and H. H. Nielsen, “The Infrared absorption spectrum of germane,” Phys. Rev. 48(11), 861–864 (1935).
[CrossRef]

Pernell, T. L.

T. E. Vandervelde, K. Sun, J. L. Merz, A. Kubis, R. Hull, T. L. Pernell, and J. C. Bean, “The effect of two-temperature capping on germanium/silicon quantum dots and analysis of superlattices so composed,” J. Appl. Phys. 99(12), 124301 (2006).
[CrossRef]

Pirri, C. F.

D. Dasgupta, F. Demichelis, C. F. Pirri, and A. Tagliaferro, “π bands and gap states from optical absorption and electron-spin-resonance studies on amorphous carbon and amorphous hydrogenated carbon films,” Phys. Rev. B Condens. Matter 43(3), 2131–2135 (1991).
[CrossRef] [PubMed]

Poon, M. C.

E. V. Jelenković, K. Y. Tong, W. Y. Cheung, I. H. Wilson, S. P. Wong, and M. C. Poon, “Low temperature doping of poly-SiGe films with boron by co-sputtering,” Thin Solid Films 368(1), 55–60 (2000).
[CrossRef]

Razi, S.

Robinson, I. K.

A. T. Fiory, J. C. Bean, L. C. Feldman, and I. K. Robinson, “Commensurate and incommensurate structures in molecular beam epitaxially grown GexSi1-x films on Si(100),” J. Appl. Phys. 56(4), 1227–1229 (1984).
[CrossRef]

Scruggs, B. E.

K. M. McNamara, B. E. Williams, K. K. Gleason, and B. E. Scruggs, “Identification of defects and impurities in chemical-vapor deposited diamond through infrared,” J. Appl. Phys. 76(4), 2466–2472 (1994).
[CrossRef]

Shanks, H.

H. Shanks, C. J. Fang, L. Ley, M. Cardona, F. J. Demond, and S. Kalbitzer, “Infrared spectrum and structure of hydrogenated amorphous silicon,” Phys. Status Solidi, B Basic Res. 100(1), 43–56 (1980).
[CrossRef]

Sheng, T. T.

J. C. Bean, T. T. Sheng, L. C. Feldman, A. T. Fiory, and R. T. Lynch, “Pseudomorphic growth of GexSi1-x on silicon by molecular beam epitaxy,” Appl. Phys. Lett. 44(1), 102–104 (1984).
[CrossRef]

Sheu, J. K.

Soukoulis, C. M.

R. Biswas, I. Kwon, and C. M. Soukoulis, “Mechanism for the Staebler-Wronski effect in a-Si:H,” Phys. Rev. B Condens. Matter 44(7), 3403–3406 (1991).
[CrossRef] [PubMed]

Steward, W. B.

W. B. Steward and H. H. Nielsen, “The Infrared absorption spectrum of silane,” Phys. Rev. 47(11), 828–832 (1935).
[CrossRef]

W. B. Steward and H. H. Nielsen, “The Infrared absorption spectrum of germane,” Phys. Rev. 48(11), 861–864 (1935).
[CrossRef]

Sun, K.

T. E. Vandervelde, K. Sun, J. L. Merz, A. Kubis, R. Hull, T. L. Pernell, and J. C. Bean, “The effect of two-temperature capping on germanium/silicon quantum dots and analysis of superlattices so composed,” J. Appl. Phys. 99(12), 124301 (2006).
[CrossRef]

Tagliaferro, A.

D. Dasgupta, F. Demichelis, C. F. Pirri, and A. Tagliaferro, “π bands and gap states from optical absorption and electron-spin-resonance studies on amorphous carbon and amorphous hydrogenated carbon films,” Phys. Rev. B Condens. Matter 43(3), 2131–2135 (1991).
[CrossRef] [PubMed]

Takada, T.

T. Matsui, C. W. Chang, T. Takada, M. Isomura, H. Fujiwara, and M. Kondo, “Microcrystalline Si1-xGex solar cells exhibiting enhanced infrared response with reduced absorber thickness,” Appl. Phys. Express 1(3), 031501 (2008).
[CrossRef]

Teh, L. K.

L. K. Teh, W. K. Choi, L. K. Bera, and W. K. Chim, “Structural characterization of polycrystalline SiGe thin film,” Solid-State Electron. 45(11), 1963–1966 (2001).
[CrossRef]

Tong, K. Y.

E. V. Jelenković, K. Y. Tong, W. Y. Cheung, I. H. Wilson, S. P. Wong, and M. C. Poon, “Low temperature doping of poly-SiGe films with boron by co-sputtering,” Thin Solid Films 368(1), 55–60 (2000).
[CrossRef]

Tsai, T. C.

T. C. Tsai, L. Z. Yu, and C. T. Lee, “Electroluminescence emission of crystalline silicon nanoclusters grown at a low temperature,” Nanotechnology 18(27), 275707 (2007).
[CrossRef]

Unold, T.

G. H. Bauer, F. Voigt, R. Carius, M. Krause, R. Bruggemann, and T. Unold, “Electronic properties of microcrystalline SiGe-thin films by hall-experiments and photo- and dark-transport,” J. Non-Cryst. Solids 299–302(1), 153–157 (2002).
[CrossRef]

Vandervelde, T. E.

A. J. Kubis, T. E. Vandervelde, J. C. Bean, D. N. Dunn, and R. Hull, “Analysis of the three-dimensional ordering of epitaxial Ge quantum dots using focused ion beam tomography,” Appl. Phys. Lett. 88(26), 263103 (2006).
[CrossRef]

T. E. Vandervelde, K. Sun, J. L. Merz, A. Kubis, R. Hull, T. L. Pernell, and J. C. Bean, “The effect of two-temperature capping on germanium/silicon quantum dots and analysis of superlattices so composed,” J. Appl. Phys. 99(12), 124301 (2006).
[CrossRef]

Voigt, F.

G. H. Bauer, F. Voigt, R. Carius, M. Krause, R. Bruggemann, and T. Unold, “Electronic properties of microcrystalline SiGe-thin films by hall-experiments and photo- and dark-transport,” J. Non-Cryst. Solids 299–302(1), 153–157 (2002).
[CrossRef]

Wagner, H.

M. A. Ghazala, W. Beyer, and H. Wagner, “Long-term stability of hydrogenated amorphous germanium measured by infrared absorption,” J. Appl. Phys. 70(8), 4540–4543 (1991).
[CrossRef]

Williams, B. E.

K. M. McNamara, B. E. Williams, K. K. Gleason, and B. E. Scruggs, “Identification of defects and impurities in chemical-vapor deposited diamond through infrared,” J. Appl. Phys. 76(4), 2466–2472 (1994).
[CrossRef]

Wilson, I. H.

E. V. Jelenković, K. Y. Tong, W. Y. Cheung, I. H. Wilson, S. P. Wong, and M. C. Poon, “Low temperature doping of poly-SiGe films with boron by co-sputtering,” Thin Solid Films 368(1), 55–60 (2000).
[CrossRef]

Wojcik, J.

Wong, S. P.

E. V. Jelenković, K. Y. Tong, W. Y. Cheung, I. H. Wilson, S. P. Wong, and M. C. Poon, “Low temperature doping of poly-SiGe films with boron by co-sputtering,” Thin Solid Films 368(1), 55–60 (2000).
[CrossRef]

Yang, J. H.

Yu, L. Z.

T. C. Tsai, L. Z. Yu, and C. T. Lee, “Electroluminescence emission of crystalline silicon nanoclusters grown at a low temperature,” Nanotechnology 18(27), 275707 (2007).
[CrossRef]

Appl. Phys. Express (1)

T. Matsui, C. W. Chang, T. Takada, M. Isomura, H. Fujiwara, and M. Kondo, “Microcrystalline Si1-xGex solar cells exhibiting enhanced infrared response with reduced absorber thickness,” Appl. Phys. Express 1(3), 031501 (2008).
[CrossRef]

Appl. Phys. Lett. (2)

A. J. Kubis, T. E. Vandervelde, J. C. Bean, D. N. Dunn, and R. Hull, “Analysis of the three-dimensional ordering of epitaxial Ge quantum dots using focused ion beam tomography,” Appl. Phys. Lett. 88(26), 263103 (2006).
[CrossRef]

J. C. Bean, T. T. Sheng, L. C. Feldman, A. T. Fiory, and R. T. Lynch, “Pseudomorphic growth of GexSi1-x on silicon by molecular beam epitaxy,” Appl. Phys. Lett. 44(1), 102–104 (1984).
[CrossRef]

IEEE Photon. Technol. Lett. (1)

C. T. Lee and H. Y. Lee, “Surface passivated function of GaAs MSM-PDs using photoelectrochemical oxidation method,” IEEE Photon. Technol. Lett. 17(2), 462–464 (2005).
[CrossRef]

IEEE Trans. Electron. Dev. (1)

S. Luryi, A. Kastalsky, and J. C. Bean, “New infrared detector on a silicon chip,” IEEE Trans. Electron. Dev. 31(9), 1135–1139 (1984).
[CrossRef]

J. Appl. Phys. (5)

A. T. Fiory, J. C. Bean, L. C. Feldman, and I. K. Robinson, “Commensurate and incommensurate structures in molecular beam epitaxially grown GexSi1-x films on Si(100),” J. Appl. Phys. 56(4), 1227–1229 (1984).
[CrossRef]

T. E. Vandervelde, K. Sun, J. L. Merz, A. Kubis, R. Hull, T. L. Pernell, and J. C. Bean, “The effect of two-temperature capping on germanium/silicon quantum dots and analysis of superlattices so composed,” J. Appl. Phys. 99(12), 124301 (2006).
[CrossRef]

M. A. Ghazala, W. Beyer, and H. Wagner, “Long-term stability of hydrogenated amorphous germanium measured by infrared absorption,” J. Appl. Phys. 70(8), 4540–4543 (1991).
[CrossRef]

K. M. McNamara, B. E. Williams, K. K. Gleason, and B. E. Scruggs, “Identification of defects and impurities in chemical-vapor deposited diamond through infrared,” J. Appl. Phys. 76(4), 2466–2472 (1994).
[CrossRef]

C. T. Lee, C. C. Lin, H. Y. Lee, and P. S. Chen, “Changes in surface state density due to chlorine treatment in GaN Schottky ultraviolet photodetectors,” J. Appl. Phys. 103(9), 094504 (2008).
[CrossRef]

J. Non-Cryst. Solids (1)

G. H. Bauer, F. Voigt, R. Carius, M. Krause, R. Bruggemann, and T. Unold, “Electronic properties of microcrystalline SiGe-thin films by hall-experiments and photo- and dark-transport,” J. Non-Cryst. Solids 299–302(1), 153–157 (2002).
[CrossRef]

Nanotechnology (1)

T. C. Tsai, L. Z. Yu, and C. T. Lee, “Electroluminescence emission of crystalline silicon nanoclusters grown at a low temperature,” Nanotechnology 18(27), 275707 (2007).
[CrossRef]

Opt. Express (3)

Phys. Rev. (2)

W. B. Steward and H. H. Nielsen, “The Infrared absorption spectrum of silane,” Phys. Rev. 47(11), 828–832 (1935).
[CrossRef]

W. B. Steward and H. H. Nielsen, “The Infrared absorption spectrum of germane,” Phys. Rev. 48(11), 861–864 (1935).
[CrossRef]

Phys. Rev. B Condens. Matter (3)

R. Biswas, I. Kwon, and C. M. Soukoulis, “Mechanism for the Staebler-Wronski effect in a-Si:H,” Phys. Rev. B Condens. Matter 44(7), 3403–3406 (1991).
[CrossRef] [PubMed]

A. A. Langford, M. L. Fleet, B. P. Nelson, W. A. Lanford, and N. Maley, “Infrared absorption strength and hydrogen content of hydrogenated amorphous silicon,” Phys. Rev. B Condens. Matter 45(23), 13367–13377 (1992).
[CrossRef] [PubMed]

D. Dasgupta, F. Demichelis, C. F. Pirri, and A. Tagliaferro, “π bands and gap states from optical absorption and electron-spin-resonance studies on amorphous carbon and amorphous hydrogenated carbon films,” Phys. Rev. B Condens. Matter 43(3), 2131–2135 (1991).
[CrossRef] [PubMed]

Phys. Status Solidi, B Basic Res. (1)

H. Shanks, C. J. Fang, L. Ley, M. Cardona, F. J. Demond, and S. Kalbitzer, “Infrared spectrum and structure of hydrogenated amorphous silicon,” Phys. Status Solidi, B Basic Res. 100(1), 43–56 (1980).
[CrossRef]

Science (1)

J. C. Bean, “Strained-layer epitaxy of germanium-silicon alloys,” Science 230(4722), 127–131 (1985).
[CrossRef] [PubMed]

Solid-State Electron. (1)

L. K. Teh, W. K. Choi, L. K. Bera, and W. K. Chim, “Structural characterization of polycrystalline SiGe thin film,” Solid-State Electron. 45(11), 1963–1966 (2001).
[CrossRef]

Thin Solid Films (2)

M. Kumru, “A comparison of the optical, IR, electron spin resonance and conductivity properties of a-Ge1-xCx:H with a a-Ge:H and a-Ge thin films prepared by R.F. sputtering,” Thin Solid Films 198(1–2), 75–84 (1991).
[CrossRef]

E. V. Jelenković, K. Y. Tong, W. Y. Cheung, I. H. Wilson, S. P. Wong, and M. C. Poon, “Low temperature doping of poly-SiGe films with boron by co-sputtering,” Thin Solid Films 368(1), 55–60 (2000).
[CrossRef]

Other (1)

X. Cao, H. S. Povolny, and X. Deng, “Hot-wire deposition of hydrogenated nanocrystalline SiGe films for thin-film Si based solar cells,” in Record of the IEEE Photovoltaic Specialists Conf. (2005), pp. 1500–1503.

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Figures (7)

Fig. 1
Fig. 1

The schematic configuration of the p-Si/i-SiGe/n-Si near-infrared photodetectors.

Fig. 2
Fig. 2

The X-ray diffraction patterns of the SiGe films deposited by various laser assistance powers.

Fig. 3
Fig. 3

(a) High-resolution transmission electron microscopy image and (b) selective area electron diffraction pattern of laser-assisted SiGe films.

Fig. 4
Fig. 4

Absorption coefficient as a function of photon energy for various SiGe films.

Fig. 5
Fig. 5

(a) Si-H bonds and (b) Ge-H bonds bonding configuration of various SiGe films before and after light- soaking.

Fig. 6
Fig. 6

The dark current as a function of the reverse bias voltage for various SiGe films.

Fig. 7
Fig. 7

(a) The photoresponsivity and (b) the spectral quantum efficiency of the p-Si/i-SiGe/n-Si near-infrared photodetectors with various SiGe films.

Tables (3)

Tables Icon

Table 1 Electrical Properties of SiGe Films Deposited by Various CO2 Laser Powers

Tables Icon

Table 2 Contents and Optical Energy Bandgap of the SiGe Films Deposited by Various CO2 Laser Powers

Tables Icon

Table 3 Hydrogen Concentration of Various SiGe Films Without and With Light Soak

Equations (5)

Equations on this page are rendered with MathJax. Learn more.

B=Kλ/Dcosθ.
α(hν)hν=C ( hν E opt ) 2 .
N H =A α(ω) ω 1 dω .
R= I ph ( A )/ P o (W).
η= I ph /e P 0 /hν .

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