Abstract

We demonstrate, for the first time, passively Q-switched laser operation of Yb:Y3Ga5O12 garnet crystal. An output power of 4.53 W at 1031 nm was generated at a pulse repetition rate of 55.6 kHz, with a Cr4+:YAG crystal acting as saturable absorber whose initial transmission was 97.5%, the corresponding pulse energy, duration and peak power were respectively 81.5 μJ, 28.5 ns and 2.86 kW. Laser pulses at a lower repetition rate of 18.2 kHz were also achieved at 1025 nm while the initial transmission of the Cr4+:YAG crystal was 85.0%, with an output power measured to be 2.56 W, the resulting pulse energy, duration, and peak power being 140.8 μJ, 5.9 ns, and 23.9 kW, respectively.

© 2013 OSA

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References

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  1. S. Chénais, F. Druon, F. Balembois, P. Georges, A. Brenier, and G. Boulon, “Diode-pumped Yb:GGG laser: comparison with Yb:YAG,” Opt. Mater. 22(2), 99–106 (2003).
    [Crossref]
  2. A. Brenier, Y. Guyot, H. Canibano, G. Boulon, A. Ródenas, D. Jaque, A. Eganyan, and A. G. Petrosyan, “Growth, spectroscopic, and laser properties of Yb3+-doped Lu3Al5O12 garnet crystal,” J. Opt. Soc. Am. B 23(4), 676–683 (2006).
    [Crossref]
  3. B. Jiang, Z. Zhao, X. Xu, P. Song, X. Wang, J. Xu, and P. Deng, “Spectral properties and charge transfer luminescence of Yb3+:Gd3Ga5O12 (Yb:GGG) crystal,” J. Cryst. Growth 277(1-4), 186–191 (2005).
    [Crossref]
  4. Y. Guyot, H. Canibano, C. Goutaudier, A. Novoselov, A. Yoshikawa, T. Fukuda, and G. Boulon, “Yb3+-doped Gd3Ga5O12 garnet single crystals grown by the micro-pulling down technique for laser application. Part 2: Concentration quenching analysis and laser optimization,” Opt. Mater. 28(1-2), 1–8 (2006).
    [Crossref]
  5. Y. Zhang, Z. Wei, B. Zhou, C. Xu, Y. Zou, D. Li, Z. Zhang, H. Zhang, J. Wang, H. Yu, K. Wu, B. Yao, and J. Wang, “Diode-pumped passively mode-locked Yb:Y3Ga5O12 laser,” Opt. Lett. 34(21), 3316–3318 (2009).
    [Crossref] [PubMed]
  6. H. Yu, K. Wu, B. Yao, H. Zhang, Z. Wang, J. Wang, Y. Zhang, Z. Wei, Z. Zhang, X. Zhang, and M. Jiang, “Growth and characteristics of Yb-doped Y3Ga5O12 laser crystal,” IEEE J. Quantum Electron. 46(12), 1689–1695 (2010).
    [Crossref]
  7. K. Wu, L. Hao, H. Zhang, H. Yu, Y. Wang, J. Wang, X. Tian, Z. Zhou, J. Liu, and R. I. Boughton, “Lu3Ga5O12: exploration of new laser host material for the ytterbium ion,” J. Opt. Soc. Am. B 29(9), 2320–2328 (2012).
    [Crossref]
  8. K. Beil, S. T. Fredrich-Thornton, F. Tellkamp, R. Peters, C. Kränkel, K. Petermann, and G. Huber, “Thermal and laser properties of Yb:LuAG for kW thin disk lasers,” Opt. Express 18(20), 20712–20722 (2010).
    [Crossref] [PubMed]
  9. J. Dong, K. Ueda, and A. A. Kaminskii, “Laser-diode pumped efficient Yb:LuAG microchip lasers oscillating at 1030 and 1047 nm,” Laser Phys. Lett. 7(10), 726–733 (2010).
    [Crossref]
  10. J. Dong, K. Ueda, and A. A. Kaminskii, “Efficient passively Q-switched Yb:LuAG microchip laser,” Opt. Lett. 32(22), 3266–3268 (2007).
    [Crossref] [PubMed]
  11. J. He, X. Liang, J. Li, H. Yu, X. Xu, Z. Zhao, J. Xu, and Z. Xu, “LD pumped Yb:LuAG mode-locked laser with 7.63ps duration,” Opt. Express 17(14), 11537–11542 (2009).
    [Crossref] [PubMed]
  12. Y. Zhang, Z. Wei, Q. Wang, D. Li, Z. Zhang, H. Yu, H. Zhang, J. Wang, and L. Lv, “Diode-pumped efficient continuous-wave Yb:Y3Ga5O12 laser at 1035 nm,” Opt. Lett. 36(4), 472–474 (2011).
    [Crossref] [PubMed]
  13. J. Liu, X. Tian, Z. Zhou, K. Wu, W. Han, and H. Zhang, “Efficient laser operation of Yb:Lu3Ga5O12 garnet crystal,” Opt. Lett. 37(12), 2388–2390 (2012).
    [Crossref] [PubMed]
  14. X. Zhang, A. Brenier, Q. Wang, Z. Wang, J. Chang, P. Li, S. Zhang, S. Ding, and S. Li, “Passive Q-switching characteristics of Yb3+:Gd3Ga5O12 crystal,” Opt. Express 13(19), 7708–7719 (2005).
    [Crossref] [PubMed]

2012 (2)

2011 (1)

2010 (3)

H. Yu, K. Wu, B. Yao, H. Zhang, Z. Wang, J. Wang, Y. Zhang, Z. Wei, Z. Zhang, X. Zhang, and M. Jiang, “Growth and characteristics of Yb-doped Y3Ga5O12 laser crystal,” IEEE J. Quantum Electron. 46(12), 1689–1695 (2010).
[Crossref]

K. Beil, S. T. Fredrich-Thornton, F. Tellkamp, R. Peters, C. Kränkel, K. Petermann, and G. Huber, “Thermal and laser properties of Yb:LuAG for kW thin disk lasers,” Opt. Express 18(20), 20712–20722 (2010).
[Crossref] [PubMed]

J. Dong, K. Ueda, and A. A. Kaminskii, “Laser-diode pumped efficient Yb:LuAG microchip lasers oscillating at 1030 and 1047 nm,” Laser Phys. Lett. 7(10), 726–733 (2010).
[Crossref]

2009 (2)

2007 (1)

2006 (2)

A. Brenier, Y. Guyot, H. Canibano, G. Boulon, A. Ródenas, D. Jaque, A. Eganyan, and A. G. Petrosyan, “Growth, spectroscopic, and laser properties of Yb3+-doped Lu3Al5O12 garnet crystal,” J. Opt. Soc. Am. B 23(4), 676–683 (2006).
[Crossref]

Y. Guyot, H. Canibano, C. Goutaudier, A. Novoselov, A. Yoshikawa, T. Fukuda, and G. Boulon, “Yb3+-doped Gd3Ga5O12 garnet single crystals grown by the micro-pulling down technique for laser application. Part 2: Concentration quenching analysis and laser optimization,” Opt. Mater. 28(1-2), 1–8 (2006).
[Crossref]

2005 (2)

B. Jiang, Z. Zhao, X. Xu, P. Song, X. Wang, J. Xu, and P. Deng, “Spectral properties and charge transfer luminescence of Yb3+:Gd3Ga5O12 (Yb:GGG) crystal,” J. Cryst. Growth 277(1-4), 186–191 (2005).
[Crossref]

X. Zhang, A. Brenier, Q. Wang, Z. Wang, J. Chang, P. Li, S. Zhang, S. Ding, and S. Li, “Passive Q-switching characteristics of Yb3+:Gd3Ga5O12 crystal,” Opt. Express 13(19), 7708–7719 (2005).
[Crossref] [PubMed]

2003 (1)

S. Chénais, F. Druon, F. Balembois, P. Georges, A. Brenier, and G. Boulon, “Diode-pumped Yb:GGG laser: comparison with Yb:YAG,” Opt. Mater. 22(2), 99–106 (2003).
[Crossref]

Balembois, F.

S. Chénais, F. Druon, F. Balembois, P. Georges, A. Brenier, and G. Boulon, “Diode-pumped Yb:GGG laser: comparison with Yb:YAG,” Opt. Mater. 22(2), 99–106 (2003).
[Crossref]

Beil, K.

Boughton, R. I.

Boulon, G.

Y. Guyot, H. Canibano, C. Goutaudier, A. Novoselov, A. Yoshikawa, T. Fukuda, and G. Boulon, “Yb3+-doped Gd3Ga5O12 garnet single crystals grown by the micro-pulling down technique for laser application. Part 2: Concentration quenching analysis and laser optimization,” Opt. Mater. 28(1-2), 1–8 (2006).
[Crossref]

A. Brenier, Y. Guyot, H. Canibano, G. Boulon, A. Ródenas, D. Jaque, A. Eganyan, and A. G. Petrosyan, “Growth, spectroscopic, and laser properties of Yb3+-doped Lu3Al5O12 garnet crystal,” J. Opt. Soc. Am. B 23(4), 676–683 (2006).
[Crossref]

S. Chénais, F. Druon, F. Balembois, P. Georges, A. Brenier, and G. Boulon, “Diode-pumped Yb:GGG laser: comparison with Yb:YAG,” Opt. Mater. 22(2), 99–106 (2003).
[Crossref]

Brenier, A.

Canibano, H.

A. Brenier, Y. Guyot, H. Canibano, G. Boulon, A. Ródenas, D. Jaque, A. Eganyan, and A. G. Petrosyan, “Growth, spectroscopic, and laser properties of Yb3+-doped Lu3Al5O12 garnet crystal,” J. Opt. Soc. Am. B 23(4), 676–683 (2006).
[Crossref]

Y. Guyot, H. Canibano, C. Goutaudier, A. Novoselov, A. Yoshikawa, T. Fukuda, and G. Boulon, “Yb3+-doped Gd3Ga5O12 garnet single crystals grown by the micro-pulling down technique for laser application. Part 2: Concentration quenching analysis and laser optimization,” Opt. Mater. 28(1-2), 1–8 (2006).
[Crossref]

Chang, J.

Chénais, S.

S. Chénais, F. Druon, F. Balembois, P. Georges, A. Brenier, and G. Boulon, “Diode-pumped Yb:GGG laser: comparison with Yb:YAG,” Opt. Mater. 22(2), 99–106 (2003).
[Crossref]

Deng, P.

B. Jiang, Z. Zhao, X. Xu, P. Song, X. Wang, J. Xu, and P. Deng, “Spectral properties and charge transfer luminescence of Yb3+:Gd3Ga5O12 (Yb:GGG) crystal,” J. Cryst. Growth 277(1-4), 186–191 (2005).
[Crossref]

Ding, S.

Dong, J.

J. Dong, K. Ueda, and A. A. Kaminskii, “Laser-diode pumped efficient Yb:LuAG microchip lasers oscillating at 1030 and 1047 nm,” Laser Phys. Lett. 7(10), 726–733 (2010).
[Crossref]

J. Dong, K. Ueda, and A. A. Kaminskii, “Efficient passively Q-switched Yb:LuAG microchip laser,” Opt. Lett. 32(22), 3266–3268 (2007).
[Crossref] [PubMed]

Druon, F.

S. Chénais, F. Druon, F. Balembois, P. Georges, A. Brenier, and G. Boulon, “Diode-pumped Yb:GGG laser: comparison with Yb:YAG,” Opt. Mater. 22(2), 99–106 (2003).
[Crossref]

Eganyan, A.

Fredrich-Thornton, S. T.

Fukuda, T.

Y. Guyot, H. Canibano, C. Goutaudier, A. Novoselov, A. Yoshikawa, T. Fukuda, and G. Boulon, “Yb3+-doped Gd3Ga5O12 garnet single crystals grown by the micro-pulling down technique for laser application. Part 2: Concentration quenching analysis and laser optimization,” Opt. Mater. 28(1-2), 1–8 (2006).
[Crossref]

Georges, P.

S. Chénais, F. Druon, F. Balembois, P. Georges, A. Brenier, and G. Boulon, “Diode-pumped Yb:GGG laser: comparison with Yb:YAG,” Opt. Mater. 22(2), 99–106 (2003).
[Crossref]

Goutaudier, C.

Y. Guyot, H. Canibano, C. Goutaudier, A. Novoselov, A. Yoshikawa, T. Fukuda, and G. Boulon, “Yb3+-doped Gd3Ga5O12 garnet single crystals grown by the micro-pulling down technique for laser application. Part 2: Concentration quenching analysis and laser optimization,” Opt. Mater. 28(1-2), 1–8 (2006).
[Crossref]

Guyot, Y.

Y. Guyot, H. Canibano, C. Goutaudier, A. Novoselov, A. Yoshikawa, T. Fukuda, and G. Boulon, “Yb3+-doped Gd3Ga5O12 garnet single crystals grown by the micro-pulling down technique for laser application. Part 2: Concentration quenching analysis and laser optimization,” Opt. Mater. 28(1-2), 1–8 (2006).
[Crossref]

A. Brenier, Y. Guyot, H. Canibano, G. Boulon, A. Ródenas, D. Jaque, A. Eganyan, and A. G. Petrosyan, “Growth, spectroscopic, and laser properties of Yb3+-doped Lu3Al5O12 garnet crystal,” J. Opt. Soc. Am. B 23(4), 676–683 (2006).
[Crossref]

Han, W.

Hao, L.

He, J.

Huber, G.

Jaque, D.

Jiang, B.

B. Jiang, Z. Zhao, X. Xu, P. Song, X. Wang, J. Xu, and P. Deng, “Spectral properties and charge transfer luminescence of Yb3+:Gd3Ga5O12 (Yb:GGG) crystal,” J. Cryst. Growth 277(1-4), 186–191 (2005).
[Crossref]

Jiang, M.

H. Yu, K. Wu, B. Yao, H. Zhang, Z. Wang, J. Wang, Y. Zhang, Z. Wei, Z. Zhang, X. Zhang, and M. Jiang, “Growth and characteristics of Yb-doped Y3Ga5O12 laser crystal,” IEEE J. Quantum Electron. 46(12), 1689–1695 (2010).
[Crossref]

Kaminskii, A. A.

J. Dong, K. Ueda, and A. A. Kaminskii, “Laser-diode pumped efficient Yb:LuAG microchip lasers oscillating at 1030 and 1047 nm,” Laser Phys. Lett. 7(10), 726–733 (2010).
[Crossref]

J. Dong, K. Ueda, and A. A. Kaminskii, “Efficient passively Q-switched Yb:LuAG microchip laser,” Opt. Lett. 32(22), 3266–3268 (2007).
[Crossref] [PubMed]

Kränkel, C.

Li, D.

Li, J.

Li, P.

Li, S.

Liang, X.

Liu, J.

Lv, L.

Novoselov, A.

Y. Guyot, H. Canibano, C. Goutaudier, A. Novoselov, A. Yoshikawa, T. Fukuda, and G. Boulon, “Yb3+-doped Gd3Ga5O12 garnet single crystals grown by the micro-pulling down technique for laser application. Part 2: Concentration quenching analysis and laser optimization,” Opt. Mater. 28(1-2), 1–8 (2006).
[Crossref]

Petermann, K.

Peters, R.

Petrosyan, A. G.

Ródenas, A.

Song, P.

B. Jiang, Z. Zhao, X. Xu, P. Song, X. Wang, J. Xu, and P. Deng, “Spectral properties and charge transfer luminescence of Yb3+:Gd3Ga5O12 (Yb:GGG) crystal,” J. Cryst. Growth 277(1-4), 186–191 (2005).
[Crossref]

Tellkamp, F.

Tian, X.

Ueda, K.

J. Dong, K. Ueda, and A. A. Kaminskii, “Laser-diode pumped efficient Yb:LuAG microchip lasers oscillating at 1030 and 1047 nm,” Laser Phys. Lett. 7(10), 726–733 (2010).
[Crossref]

J. Dong, K. Ueda, and A. A. Kaminskii, “Efficient passively Q-switched Yb:LuAG microchip laser,” Opt. Lett. 32(22), 3266–3268 (2007).
[Crossref] [PubMed]

Wang, J.

Wang, Q.

Wang, X.

B. Jiang, Z. Zhao, X. Xu, P. Song, X. Wang, J. Xu, and P. Deng, “Spectral properties and charge transfer luminescence of Yb3+:Gd3Ga5O12 (Yb:GGG) crystal,” J. Cryst. Growth 277(1-4), 186–191 (2005).
[Crossref]

Wang, Y.

Wang, Z.

H. Yu, K. Wu, B. Yao, H. Zhang, Z. Wang, J. Wang, Y. Zhang, Z. Wei, Z. Zhang, X. Zhang, and M. Jiang, “Growth and characteristics of Yb-doped Y3Ga5O12 laser crystal,” IEEE J. Quantum Electron. 46(12), 1689–1695 (2010).
[Crossref]

X. Zhang, A. Brenier, Q. Wang, Z. Wang, J. Chang, P. Li, S. Zhang, S. Ding, and S. Li, “Passive Q-switching characteristics of Yb3+:Gd3Ga5O12 crystal,” Opt. Express 13(19), 7708–7719 (2005).
[Crossref] [PubMed]

Wei, Z.

Wu, K.

Xu, C.

Xu, J.

J. He, X. Liang, J. Li, H. Yu, X. Xu, Z. Zhao, J. Xu, and Z. Xu, “LD pumped Yb:LuAG mode-locked laser with 7.63ps duration,” Opt. Express 17(14), 11537–11542 (2009).
[Crossref] [PubMed]

B. Jiang, Z. Zhao, X. Xu, P. Song, X. Wang, J. Xu, and P. Deng, “Spectral properties and charge transfer luminescence of Yb3+:Gd3Ga5O12 (Yb:GGG) crystal,” J. Cryst. Growth 277(1-4), 186–191 (2005).
[Crossref]

Xu, X.

J. He, X. Liang, J. Li, H. Yu, X. Xu, Z. Zhao, J. Xu, and Z. Xu, “LD pumped Yb:LuAG mode-locked laser with 7.63ps duration,” Opt. Express 17(14), 11537–11542 (2009).
[Crossref] [PubMed]

B. Jiang, Z. Zhao, X. Xu, P. Song, X. Wang, J. Xu, and P. Deng, “Spectral properties and charge transfer luminescence of Yb3+:Gd3Ga5O12 (Yb:GGG) crystal,” J. Cryst. Growth 277(1-4), 186–191 (2005).
[Crossref]

Xu, Z.

Yao, B.

H. Yu, K. Wu, B. Yao, H. Zhang, Z. Wang, J. Wang, Y. Zhang, Z. Wei, Z. Zhang, X. Zhang, and M. Jiang, “Growth and characteristics of Yb-doped Y3Ga5O12 laser crystal,” IEEE J. Quantum Electron. 46(12), 1689–1695 (2010).
[Crossref]

Y. Zhang, Z. Wei, B. Zhou, C. Xu, Y. Zou, D. Li, Z. Zhang, H. Zhang, J. Wang, H. Yu, K. Wu, B. Yao, and J. Wang, “Diode-pumped passively mode-locked Yb:Y3Ga5O12 laser,” Opt. Lett. 34(21), 3316–3318 (2009).
[Crossref] [PubMed]

Yoshikawa, A.

Y. Guyot, H. Canibano, C. Goutaudier, A. Novoselov, A. Yoshikawa, T. Fukuda, and G. Boulon, “Yb3+-doped Gd3Ga5O12 garnet single crystals grown by the micro-pulling down technique for laser application. Part 2: Concentration quenching analysis and laser optimization,” Opt. Mater. 28(1-2), 1–8 (2006).
[Crossref]

Yu, H.

Zhang, H.

Zhang, S.

Zhang, X.

H. Yu, K. Wu, B. Yao, H. Zhang, Z. Wang, J. Wang, Y. Zhang, Z. Wei, Z. Zhang, X. Zhang, and M. Jiang, “Growth and characteristics of Yb-doped Y3Ga5O12 laser crystal,” IEEE J. Quantum Electron. 46(12), 1689–1695 (2010).
[Crossref]

X. Zhang, A. Brenier, Q. Wang, Z. Wang, J. Chang, P. Li, S. Zhang, S. Ding, and S. Li, “Passive Q-switching characteristics of Yb3+:Gd3Ga5O12 crystal,” Opt. Express 13(19), 7708–7719 (2005).
[Crossref] [PubMed]

Zhang, Y.

Zhang, Z.

Zhao, Z.

J. He, X. Liang, J. Li, H. Yu, X. Xu, Z. Zhao, J. Xu, and Z. Xu, “LD pumped Yb:LuAG mode-locked laser with 7.63ps duration,” Opt. Express 17(14), 11537–11542 (2009).
[Crossref] [PubMed]

B. Jiang, Z. Zhao, X. Xu, P. Song, X. Wang, J. Xu, and P. Deng, “Spectral properties and charge transfer luminescence of Yb3+:Gd3Ga5O12 (Yb:GGG) crystal,” J. Cryst. Growth 277(1-4), 186–191 (2005).
[Crossref]

Zhou, B.

Zhou, Z.

Zou, Y.

IEEE J. Quantum Electron. (1)

H. Yu, K. Wu, B. Yao, H. Zhang, Z. Wang, J. Wang, Y. Zhang, Z. Wei, Z. Zhang, X. Zhang, and M. Jiang, “Growth and characteristics of Yb-doped Y3Ga5O12 laser crystal,” IEEE J. Quantum Electron. 46(12), 1689–1695 (2010).
[Crossref]

J. Cryst. Growth (1)

B. Jiang, Z. Zhao, X. Xu, P. Song, X. Wang, J. Xu, and P. Deng, “Spectral properties and charge transfer luminescence of Yb3+:Gd3Ga5O12 (Yb:GGG) crystal,” J. Cryst. Growth 277(1-4), 186–191 (2005).
[Crossref]

J. Opt. Soc. Am. B (2)

Laser Phys. Lett. (1)

J. Dong, K. Ueda, and A. A. Kaminskii, “Laser-diode pumped efficient Yb:LuAG microchip lasers oscillating at 1030 and 1047 nm,” Laser Phys. Lett. 7(10), 726–733 (2010).
[Crossref]

Opt. Express (3)

Opt. Lett. (4)

Opt. Mater. (2)

S. Chénais, F. Druon, F. Balembois, P. Georges, A. Brenier, and G. Boulon, “Diode-pumped Yb:GGG laser: comparison with Yb:YAG,” Opt. Mater. 22(2), 99–106 (2003).
[Crossref]

Y. Guyot, H. Canibano, C. Goutaudier, A. Novoselov, A. Yoshikawa, T. Fukuda, and G. Boulon, “Yb3+-doped Gd3Ga5O12 garnet single crystals grown by the micro-pulling down technique for laser application. Part 2: Concentration quenching analysis and laser optimization,” Opt. Mater. 28(1-2), 1–8 (2006).
[Crossref]

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Figures (7)

Fig. 1
Fig. 1

Output power versus Pabs for cw laser operation obtained with Yb:YGG crystals of different lengths.

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Fig. 2
Fig. 2

Emission spectra measured for cw laser operation obtained with Yb:YGG crystals of different lengths at an intermediate pump level (a) and the highest pump power (b).

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Fig. 3
Fig. 3

Emission spectra measured at Pabs = 5.82 W for the laser operation generated with the 4 mm thick crystal, showing the dependence of oscillation wavelengths on the output coupling utilized.

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Fig. 4
Fig. 4

Gain cross section versus wavelength for the Yb:YGG crystal, calculated for a number of small magnitudes of the parameter β.

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Fig. 5
Fig. 5

Average output power versus Pabs for Q-switched laser operation generated with the 4 mm thick crystal under different conditions of T = 20%, T0 = 97.5%; T = 30%, T0 = 94.4%; T = 30%, T0 = 90.0%; and T = 30%, T0 = 85.0%.

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Fig. 6
Fig. 6

Typical pulse profiles measured at Pabs = 6.02 W under different operational conditions.

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Fig. 7
Fig. 7

Emission spectra measured at Pabs = 6.02 W for Q-switched operation generated under different operational conditions.

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Tables (1)

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Table 1 Parameters Characterizing the Passively Q-switched Yb:YGG laser

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