Abstract

We report inducing an array of dumbbell-like air-voids inside the sapphire substrate in InGaN-based light-emitting diodes (LEDs) to improve the light extraction from LED device by a picosecond (Ps) pulse laser. At an injection current of 100 mA, the light output power (LOP) of packaged LEDs with laser-induced air-voids can be improved by 24.7% compared with conventional LEDs. Far-field radiation pattern has verified that this great improvement in LOP is due to the light scattering occurred at the interface of sapphire/air-voids. Current-Voltage curves show that the laser processing of air-voids will not degrade the LED electrical properties. Furthermore, leakage current at a level of ~5 nA at −10V has demonstrated an enhancement in the LED electrical performance with laser-induced air-voids. Second focusing mechanism, which is originated in the local heating effect around the laser focus, has been proposed to explain the formation of dumbbell-like air-voids.

© 2013 Optical Society of America

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  1. F. P. Wenzl, L. Kuna, C. Sommer, F. Reil, J. R. Krenn, P. Pachler, and P. Hartmann, “On the adjustment of the color temperature of white light-emitting diodes by femtosecond laser patterning,” IEEE Photon. Technol. Lett.23(2), 124–126 (2011).
    [CrossRef]
  2. W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, and N. M. Johnson, “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off,” Appl. Phys. Lett.75(10), 1360–1362 (1999).
    [CrossRef]
  3. C.-F. Chu, F.-I. Lai, J.-T. Chu, C.-C. Yu, C.-F. Lin, H.-C. Kuo, and S. C. Wang, “Study of GaN light-emitting diodes fabricated by laser lift-off technique,” J. Appl. Phys.95(8), 3916–3921 (2004).
    [CrossRef]
  4. O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett.89(7), 071109 (2006).
    [CrossRef]
  5. S.-J. Chang, D. S. Kuo, K. T. Lam, K. H. Wen, T. K. Ko, and S. J. Hon, “GaN-based LEDs with sapphire debris removed by phosphoric etching,” IEEE Trans. Compon. Packag. Manuf. Tech.2(2), 349–353 (2012).
    [CrossRef]
  6. J.-H. Lee, N.-S. Kim, and J.-H. Lee, “Development of chip separation technique for InGaN-based light emitting diodes,” IEEE J. Sel. Top. Quantum Electron.47(12), 1493–1498 (2011).
    [CrossRef]
  7. W. Y. Fu, K. N. Hui, X. H. Wang, K. K. Y. Wong, P. T. Lai, and H. W. Choi, “Geometrical shaping of InGaN light-emitting diodes by laser micromachining,” IEEE Photon. Technol. Lett.21(15), 1078–1080 (2009).
    [CrossRef]
  8. R. Moser, C. Goßler, M. Kunzer, K. Köhler, W. Pletschen, J. Brunne, U. T. Schwarz, and J. Wagner, “Laser direct writing of GaN-based light-emitting diodes—The suitable laser source for mesa definition,” J. Appl. Phys.113(10), 103107 (2013).
    [CrossRef]
  9. W. C. Lee, S. J. Wang, K. M. Uang, T. M. Chen, D. M. Kuo, P. R. Wang, and P. H. Wang, “Enhanced light output of GaN-based vertical structured light-emitting diodes with two-step surface roughening using KrF laser and chemical wet etching,” IEEE Photon. Technol. Lett.22(17), 1318–1320 (2010).
    [CrossRef]
  10. Y.-H. Chang, Y.-C. Lin, Y.-S. Liu, and C.-Y. Liu, “Light-extraction enhancement by cavity array-textured N-polar GaN surfaces ablated using a KrF laser,” IEEE Photon. Technol. Lett.24(22), 2013–2015 (2012).
    [CrossRef]
  11. L. Kuna, A. Haase, F. Reil, C. Sommer, J. R. Krenn, P. Hartmann, P. Pachler, S. Tasch, and F. P. Wenzl, “Surface texturing of high-power flip-chip LEDs by femtosecond laser direct structuring,” IEEE J. Sel. Top. Quantum Electron.15(4), 1250–1256 (2009).
    [CrossRef]
  12. J. H. Lee, S. M. Hwang, N. S. Kim, and J. H. Lee, “InGaN-based high-power flip-chip LEDs with deep-hole-patterned sapphire substrate by laser direct beam drilling,” IEEE Electron Device Lett.31(7), 698–700 (2010).
    [CrossRef]
  13. J.-T. Chen, W.-C. Lai, Y.-C. Chang, J.-K. Sheu, and W.-C. Sen, “GaN-based light emitting diodes with micro- and nano-patterned structures by femtosecond laser nonlinear decomposition,” Appl. Phys. Lett.101(13), 131103 (2012).
    [CrossRef] [PubMed]
  14. J.-T. Chen, W.-C. Lai, Y.-J. Kao, Y.-Y. Yang, and J.-K. Sheu, “Laser-induced periodic structures for light extraction efficiency enhancement of GaN-based light emitting diodes,” Opt. Express20(5), 5689–5695 (2012).
    [CrossRef] [PubMed]
  15. T.-L. Chang, Z.-C. Chen, and Y.-C. Lee, “Micro/nano structures induced by femtosecond laser to enhance light extraction of GaN-based LEDs,” Opt. Express20(14), 15997–16002 (2012).
    [CrossRef] [PubMed]
  16. C.-M. Lin, C.-F. Lin, B.-C. Shieh, T.-Y. Yu, S.-H. Chen, P.-H. Tsai, K.-T. Chen, J.-J. Dai, and T.-L. Tsai, “InGaN-based light-emitting diodes with a sawtooth-shaped sidewall on sapphire substrate,” IEEE Photon. Technol. Lett.24(13), 1133–1135 (2012).
    [CrossRef]
  17. Z. Yiyun, G. Enqing, L. Zhi, W. Tongbo, L. Jing, Y. Xiaoyan, and W. Guohong, “Light extraction efficiency improvement by curved GaN sidewalls in InGaN-based light-emitting diodes,” IEEE Photon. Technol. Lett.24(4), 243–245 (2012).
    [CrossRef]
  18. S. C. Shei, H. M. Lo, W. C. Lai, W. C. Lin, and S. J. Chang, “GaN-based LEDs with air voids prepared by laser scribing and chemical etching,” IEEE Photon. Technol. Lett.23(16), 1172–1174 (2011).
    [CrossRef]
  19. W.-C. Huang, C.-F. Lin, T.-H. Hsieh, S.-H. Chen, M.-S. Lin, K.-T. Chen, C.-M. Lin, S.-H. Chen, and P. Han, “InGaN light emitting diodes with a laser-treated tapered GaN substrate,” Opt. Express19(S5Suppl 5), A1126–A1134 (2011).
    [CrossRef] [PubMed]
  20. M. Kumagai, N. Uchiyama, E. Ohmura, R. Sugiura, K. Atsumi, and K. Fukumitsu, “Advanced dicing technology for semiconductor wafer-stealth dicing,” IEEE Trans. Semicond. Manuf.20(3), 259–265 (2007).
    [CrossRef]
  21. J. H. Lee, N. S. Kim, S. S. Hong, and J. H. Lee, “Enhanced extraction efficiency of InGaN-based light-emitting diodes using 100-kHz femtosecond-laser-scribing technology,” IEEE Electron Device Lett.31(3), 213–215 (2010).
    [CrossRef]
  22. K. C. Chen, Y. K. Su, C.-L. Lin, and H. C. Hsu, “Laser scribing of sapphire substrate to increase side light extraction of GaN-based light emitting diodes,” J. Lightwave Technol.29(13), 1907–1912 (2011).
    [CrossRef]
  23. Y. Zhang, H. Xie, H. Zheng, T. Wei, H. Yang, J. Li, X. Yi, X. Song, G. Wang, and J. Li, “Light extraction efficiency improvement by multiple laser stealth dicing in InGaN-based blue light-emitting diodes,” Opt. Express20(6), 6808–6815 (2012).
    [CrossRef] [PubMed]
  24. H. G. Kim, H. K. Kim, H. Y. Kim, J. H. Ryu, J. H. Kang, N. Han, P. Uthirakumar, and C.-H. Hong, “Impact of two-floor air prism arrays as an embedded reflector for enhancing the output power of InGaN/GaN light emitting diodes,” Appl. Phys. Lett.95(22), 221110 (2009).
    [CrossRef]
  25. T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett.84(6), 855–857 (2004).
    [CrossRef]

2013 (1)

R. Moser, C. Goßler, M. Kunzer, K. Köhler, W. Pletschen, J. Brunne, U. T. Schwarz, and J. Wagner, “Laser direct writing of GaN-based light-emitting diodes—The suitable laser source for mesa definition,” J. Appl. Phys.113(10), 103107 (2013).
[CrossRef]

2012 (8)

S.-J. Chang, D. S. Kuo, K. T. Lam, K. H. Wen, T. K. Ko, and S. J. Hon, “GaN-based LEDs with sapphire debris removed by phosphoric etching,” IEEE Trans. Compon. Packag. Manuf. Tech.2(2), 349–353 (2012).
[CrossRef]

J.-T. Chen, W.-C. Lai, Y.-C. Chang, J.-K. Sheu, and W.-C. Sen, “GaN-based light emitting diodes with micro- and nano-patterned structures by femtosecond laser nonlinear decomposition,” Appl. Phys. Lett.101(13), 131103 (2012).
[CrossRef] [PubMed]

J.-T. Chen, W.-C. Lai, Y.-J. Kao, Y.-Y. Yang, and J.-K. Sheu, “Laser-induced periodic structures for light extraction efficiency enhancement of GaN-based light emitting diodes,” Opt. Express20(5), 5689–5695 (2012).
[CrossRef] [PubMed]

T.-L. Chang, Z.-C. Chen, and Y.-C. Lee, “Micro/nano structures induced by femtosecond laser to enhance light extraction of GaN-based LEDs,” Opt. Express20(14), 15997–16002 (2012).
[CrossRef] [PubMed]

C.-M. Lin, C.-F. Lin, B.-C. Shieh, T.-Y. Yu, S.-H. Chen, P.-H. Tsai, K.-T. Chen, J.-J. Dai, and T.-L. Tsai, “InGaN-based light-emitting diodes with a sawtooth-shaped sidewall on sapphire substrate,” IEEE Photon. Technol. Lett.24(13), 1133–1135 (2012).
[CrossRef]

Z. Yiyun, G. Enqing, L. Zhi, W. Tongbo, L. Jing, Y. Xiaoyan, and W. Guohong, “Light extraction efficiency improvement by curved GaN sidewalls in InGaN-based light-emitting diodes,” IEEE Photon. Technol. Lett.24(4), 243–245 (2012).
[CrossRef]

Y.-H. Chang, Y.-C. Lin, Y.-S. Liu, and C.-Y. Liu, “Light-extraction enhancement by cavity array-textured N-polar GaN surfaces ablated using a KrF laser,” IEEE Photon. Technol. Lett.24(22), 2013–2015 (2012).
[CrossRef]

Y. Zhang, H. Xie, H. Zheng, T. Wei, H. Yang, J. Li, X. Yi, X. Song, G. Wang, and J. Li, “Light extraction efficiency improvement by multiple laser stealth dicing in InGaN-based blue light-emitting diodes,” Opt. Express20(6), 6808–6815 (2012).
[CrossRef] [PubMed]

2011 (5)

K. C. Chen, Y. K. Su, C.-L. Lin, and H. C. Hsu, “Laser scribing of sapphire substrate to increase side light extraction of GaN-based light emitting diodes,” J. Lightwave Technol.29(13), 1907–1912 (2011).
[CrossRef]

S. C. Shei, H. M. Lo, W. C. Lai, W. C. Lin, and S. J. Chang, “GaN-based LEDs with air voids prepared by laser scribing and chemical etching,” IEEE Photon. Technol. Lett.23(16), 1172–1174 (2011).
[CrossRef]

W.-C. Huang, C.-F. Lin, T.-H. Hsieh, S.-H. Chen, M.-S. Lin, K.-T. Chen, C.-M. Lin, S.-H. Chen, and P. Han, “InGaN light emitting diodes with a laser-treated tapered GaN substrate,” Opt. Express19(S5Suppl 5), A1126–A1134 (2011).
[CrossRef] [PubMed]

J.-H. Lee, N.-S. Kim, and J.-H. Lee, “Development of chip separation technique for InGaN-based light emitting diodes,” IEEE J. Sel. Top. Quantum Electron.47(12), 1493–1498 (2011).
[CrossRef]

F. P. Wenzl, L. Kuna, C. Sommer, F. Reil, J. R. Krenn, P. Pachler, and P. Hartmann, “On the adjustment of the color temperature of white light-emitting diodes by femtosecond laser patterning,” IEEE Photon. Technol. Lett.23(2), 124–126 (2011).
[CrossRef]

2010 (3)

W. C. Lee, S. J. Wang, K. M. Uang, T. M. Chen, D. M. Kuo, P. R. Wang, and P. H. Wang, “Enhanced light output of GaN-based vertical structured light-emitting diodes with two-step surface roughening using KrF laser and chemical wet etching,” IEEE Photon. Technol. Lett.22(17), 1318–1320 (2010).
[CrossRef]

J. H. Lee, S. M. Hwang, N. S. Kim, and J. H. Lee, “InGaN-based high-power flip-chip LEDs with deep-hole-patterned sapphire substrate by laser direct beam drilling,” IEEE Electron Device Lett.31(7), 698–700 (2010).
[CrossRef]

J. H. Lee, N. S. Kim, S. S. Hong, and J. H. Lee, “Enhanced extraction efficiency of InGaN-based light-emitting diodes using 100-kHz femtosecond-laser-scribing technology,” IEEE Electron Device Lett.31(3), 213–215 (2010).
[CrossRef]

2009 (3)

L. Kuna, A. Haase, F. Reil, C. Sommer, J. R. Krenn, P. Hartmann, P. Pachler, S. Tasch, and F. P. Wenzl, “Surface texturing of high-power flip-chip LEDs by femtosecond laser direct structuring,” IEEE J. Sel. Top. Quantum Electron.15(4), 1250–1256 (2009).
[CrossRef]

H. G. Kim, H. K. Kim, H. Y. Kim, J. H. Ryu, J. H. Kang, N. Han, P. Uthirakumar, and C.-H. Hong, “Impact of two-floor air prism arrays as an embedded reflector for enhancing the output power of InGaN/GaN light emitting diodes,” Appl. Phys. Lett.95(22), 221110 (2009).
[CrossRef]

W. Y. Fu, K. N. Hui, X. H. Wang, K. K. Y. Wong, P. T. Lai, and H. W. Choi, “Geometrical shaping of InGaN light-emitting diodes by laser micromachining,” IEEE Photon. Technol. Lett.21(15), 1078–1080 (2009).
[CrossRef]

2007 (1)

M. Kumagai, N. Uchiyama, E. Ohmura, R. Sugiura, K. Atsumi, and K. Fukumitsu, “Advanced dicing technology for semiconductor wafer-stealth dicing,” IEEE Trans. Semicond. Manuf.20(3), 259–265 (2007).
[CrossRef]

2006 (1)

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett.89(7), 071109 (2006).
[CrossRef]

2004 (2)

C.-F. Chu, F.-I. Lai, J.-T. Chu, C.-C. Yu, C.-F. Lin, H.-C. Kuo, and S. C. Wang, “Study of GaN light-emitting diodes fabricated by laser lift-off technique,” J. Appl. Phys.95(8), 3916–3921 (2004).
[CrossRef]

T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett.84(6), 855–857 (2004).
[CrossRef]

1999 (1)

W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, and N. M. Johnson, “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off,” Appl. Phys. Lett.75(10), 1360–1362 (1999).
[CrossRef]

Atsumi, K.

M. Kumagai, N. Uchiyama, E. Ohmura, R. Sugiura, K. Atsumi, and K. Fukumitsu, “Advanced dicing technology for semiconductor wafer-stealth dicing,” IEEE Trans. Semicond. Manuf.20(3), 259–265 (2007).
[CrossRef]

Bour, D. P.

W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, and N. M. Johnson, “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off,” Appl. Phys. Lett.75(10), 1360–1362 (1999).
[CrossRef]

Brunne, J.

R. Moser, C. Goßler, M. Kunzer, K. Köhler, W. Pletschen, J. Brunne, U. T. Schwarz, and J. Wagner, “Laser direct writing of GaN-based light-emitting diodes—The suitable laser source for mesa definition,” J. Appl. Phys.113(10), 103107 (2013).
[CrossRef]

Chang, S. J.

S. C. Shei, H. M. Lo, W. C. Lai, W. C. Lin, and S. J. Chang, “GaN-based LEDs with air voids prepared by laser scribing and chemical etching,” IEEE Photon. Technol. Lett.23(16), 1172–1174 (2011).
[CrossRef]

Chang, S.-J.

S.-J. Chang, D. S. Kuo, K. T. Lam, K. H. Wen, T. K. Ko, and S. J. Hon, “GaN-based LEDs with sapphire debris removed by phosphoric etching,” IEEE Trans. Compon. Packag. Manuf. Tech.2(2), 349–353 (2012).
[CrossRef]

Chang, T.-L.

Chang, Y.-C.

J.-T. Chen, W.-C. Lai, Y.-C. Chang, J.-K. Sheu, and W.-C. Sen, “GaN-based light emitting diodes with micro- and nano-patterned structures by femtosecond laser nonlinear decomposition,” Appl. Phys. Lett.101(13), 131103 (2012).
[CrossRef] [PubMed]

Chang, Y.-H.

Y.-H. Chang, Y.-C. Lin, Y.-S. Liu, and C.-Y. Liu, “Light-extraction enhancement by cavity array-textured N-polar GaN surfaces ablated using a KrF laser,” IEEE Photon. Technol. Lett.24(22), 2013–2015 (2012).
[CrossRef]

Chen, J.-T.

J.-T. Chen, W.-C. Lai, Y.-J. Kao, Y.-Y. Yang, and J.-K. Sheu, “Laser-induced periodic structures for light extraction efficiency enhancement of GaN-based light emitting diodes,” Opt. Express20(5), 5689–5695 (2012).
[CrossRef] [PubMed]

J.-T. Chen, W.-C. Lai, Y.-C. Chang, J.-K. Sheu, and W.-C. Sen, “GaN-based light emitting diodes with micro- and nano-patterned structures by femtosecond laser nonlinear decomposition,” Appl. Phys. Lett.101(13), 131103 (2012).
[CrossRef] [PubMed]

Chen, K. C.

Chen, K.-T.

C.-M. Lin, C.-F. Lin, B.-C. Shieh, T.-Y. Yu, S.-H. Chen, P.-H. Tsai, K.-T. Chen, J.-J. Dai, and T.-L. Tsai, “InGaN-based light-emitting diodes with a sawtooth-shaped sidewall on sapphire substrate,” IEEE Photon. Technol. Lett.24(13), 1133–1135 (2012).
[CrossRef]

W.-C. Huang, C.-F. Lin, T.-H. Hsieh, S.-H. Chen, M.-S. Lin, K.-T. Chen, C.-M. Lin, S.-H. Chen, and P. Han, “InGaN light emitting diodes with a laser-treated tapered GaN substrate,” Opt. Express19(S5Suppl 5), A1126–A1134 (2011).
[CrossRef] [PubMed]

Chen, S.-H.

Chen, T. M.

W. C. Lee, S. J. Wang, K. M. Uang, T. M. Chen, D. M. Kuo, P. R. Wang, and P. H. Wang, “Enhanced light output of GaN-based vertical structured light-emitting diodes with two-step surface roughening using KrF laser and chemical wet etching,” IEEE Photon. Technol. Lett.22(17), 1318–1320 (2010).
[CrossRef]

Chen, Z.-C.

Cheung, N. W.

W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, and N. M. Johnson, “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off,” Appl. Phys. Lett.75(10), 1360–1362 (1999).
[CrossRef]

Choi, H. W.

W. Y. Fu, K. N. Hui, X. H. Wang, K. K. Y. Wong, P. T. Lai, and H. W. Choi, “Geometrical shaping of InGaN light-emitting diodes by laser micromachining,” IEEE Photon. Technol. Lett.21(15), 1078–1080 (2009).
[CrossRef]

Chu, C.-F.

C.-F. Chu, F.-I. Lai, J.-T. Chu, C.-C. Yu, C.-F. Lin, H.-C. Kuo, and S. C. Wang, “Study of GaN light-emitting diodes fabricated by laser lift-off technique,” J. Appl. Phys.95(8), 3916–3921 (2004).
[CrossRef]

Chu, J.-T.

C.-F. Chu, F.-I. Lai, J.-T. Chu, C.-C. Yu, C.-F. Lin, H.-C. Kuo, and S. C. Wang, “Study of GaN light-emitting diodes fabricated by laser lift-off technique,” J. Appl. Phys.95(8), 3916–3921 (2004).
[CrossRef]

Dai, J.-J.

C.-M. Lin, C.-F. Lin, B.-C. Shieh, T.-Y. Yu, S.-H. Chen, P.-H. Tsai, K.-T. Chen, J.-J. Dai, and T.-L. Tsai, “InGaN-based light-emitting diodes with a sawtooth-shaped sidewall on sapphire substrate,” IEEE Photon. Technol. Lett.24(13), 1133–1135 (2012).
[CrossRef]

DenBaars, S. P.

T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett.84(6), 855–857 (2004).
[CrossRef]

Enqing, G.

Z. Yiyun, G. Enqing, L. Zhi, W. Tongbo, L. Jing, Y. Xiaoyan, and W. Guohong, “Light extraction efficiency improvement by curved GaN sidewalls in InGaN-based light-emitting diodes,” IEEE Photon. Technol. Lett.24(4), 243–245 (2012).
[CrossRef]

Epler, J. E.

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett.89(7), 071109 (2006).
[CrossRef]

Fu, W. Y.

W. Y. Fu, K. N. Hui, X. H. Wang, K. K. Y. Wong, P. T. Lai, and H. W. Choi, “Geometrical shaping of InGaN light-emitting diodes by laser micromachining,” IEEE Photon. Technol. Lett.21(15), 1078–1080 (2009).
[CrossRef]

Fujii, T.

T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett.84(6), 855–857 (2004).
[CrossRef]

Fukumitsu, K.

M. Kumagai, N. Uchiyama, E. Ohmura, R. Sugiura, K. Atsumi, and K. Fukumitsu, “Advanced dicing technology for semiconductor wafer-stealth dicing,” IEEE Trans. Semicond. Manuf.20(3), 259–265 (2007).
[CrossRef]

Gao, Y.

T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett.84(6), 855–857 (2004).
[CrossRef]

Goßler, C.

R. Moser, C. Goßler, M. Kunzer, K. Köhler, W. Pletschen, J. Brunne, U. T. Schwarz, and J. Wagner, “Laser direct writing of GaN-based light-emitting diodes—The suitable laser source for mesa definition,” J. Appl. Phys.113(10), 103107 (2013).
[CrossRef]

Guohong, W.

Z. Yiyun, G. Enqing, L. Zhi, W. Tongbo, L. Jing, Y. Xiaoyan, and W. Guohong, “Light extraction efficiency improvement by curved GaN sidewalls in InGaN-based light-emitting diodes,” IEEE Photon. Technol. Lett.24(4), 243–245 (2012).
[CrossRef]

Haase, A.

L. Kuna, A. Haase, F. Reil, C. Sommer, J. R. Krenn, P. Hartmann, P. Pachler, S. Tasch, and F. P. Wenzl, “Surface texturing of high-power flip-chip LEDs by femtosecond laser direct structuring,” IEEE J. Sel. Top. Quantum Electron.15(4), 1250–1256 (2009).
[CrossRef]

Han, N.

H. G. Kim, H. K. Kim, H. Y. Kim, J. H. Ryu, J. H. Kang, N. Han, P. Uthirakumar, and C.-H. Hong, “Impact of two-floor air prism arrays as an embedded reflector for enhancing the output power of InGaN/GaN light emitting diodes,” Appl. Phys. Lett.95(22), 221110 (2009).
[CrossRef]

Han, P.

Hartmann, P.

F. P. Wenzl, L. Kuna, C. Sommer, F. Reil, J. R. Krenn, P. Pachler, and P. Hartmann, “On the adjustment of the color temperature of white light-emitting diodes by femtosecond laser patterning,” IEEE Photon. Technol. Lett.23(2), 124–126 (2011).
[CrossRef]

L. Kuna, A. Haase, F. Reil, C. Sommer, J. R. Krenn, P. Hartmann, P. Pachler, S. Tasch, and F. P. Wenzl, “Surface texturing of high-power flip-chip LEDs by femtosecond laser direct structuring,” IEEE J. Sel. Top. Quantum Electron.15(4), 1250–1256 (2009).
[CrossRef]

Holcomb, M. O.

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett.89(7), 071109 (2006).
[CrossRef]

Hon, S. J.

S.-J. Chang, D. S. Kuo, K. T. Lam, K. H. Wen, T. K. Ko, and S. J. Hon, “GaN-based LEDs with sapphire debris removed by phosphoric etching,” IEEE Trans. Compon. Packag. Manuf. Tech.2(2), 349–353 (2012).
[CrossRef]

Hong, C.-H.

H. G. Kim, H. K. Kim, H. Y. Kim, J. H. Ryu, J. H. Kang, N. Han, P. Uthirakumar, and C.-H. Hong, “Impact of two-floor air prism arrays as an embedded reflector for enhancing the output power of InGaN/GaN light emitting diodes,” Appl. Phys. Lett.95(22), 221110 (2009).
[CrossRef]

Hong, S. S.

J. H. Lee, N. S. Kim, S. S. Hong, and J. H. Lee, “Enhanced extraction efficiency of InGaN-based light-emitting diodes using 100-kHz femtosecond-laser-scribing technology,” IEEE Electron Device Lett.31(3), 213–215 (2010).
[CrossRef]

Hsieh, T.-H.

Hsu, H. C.

Hu, E. L.

T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett.84(6), 855–857 (2004).
[CrossRef]

Huang, W.-C.

Hui, K. N.

W. Y. Fu, K. N. Hui, X. H. Wang, K. K. Y. Wong, P. T. Lai, and H. W. Choi, “Geometrical shaping of InGaN light-emitting diodes by laser micromachining,” IEEE Photon. Technol. Lett.21(15), 1078–1080 (2009).
[CrossRef]

Hwang, S. M.

J. H. Lee, S. M. Hwang, N. S. Kim, and J. H. Lee, “InGaN-based high-power flip-chip LEDs with deep-hole-patterned sapphire substrate by laser direct beam drilling,” IEEE Electron Device Lett.31(7), 698–700 (2010).
[CrossRef]

Jing, L.

Z. Yiyun, G. Enqing, L. Zhi, W. Tongbo, L. Jing, Y. Xiaoyan, and W. Guohong, “Light extraction efficiency improvement by curved GaN sidewalls in InGaN-based light-emitting diodes,” IEEE Photon. Technol. Lett.24(4), 243–245 (2012).
[CrossRef]

Johnson, N. M.

W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, and N. M. Johnson, “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off,” Appl. Phys. Lett.75(10), 1360–1362 (1999).
[CrossRef]

Kang, J. H.

H. G. Kim, H. K. Kim, H. Y. Kim, J. H. Ryu, J. H. Kang, N. Han, P. Uthirakumar, and C.-H. Hong, “Impact of two-floor air prism arrays as an embedded reflector for enhancing the output power of InGaN/GaN light emitting diodes,” Appl. Phys. Lett.95(22), 221110 (2009).
[CrossRef]

Kao, Y.-J.

Kim, H. G.

H. G. Kim, H. K. Kim, H. Y. Kim, J. H. Ryu, J. H. Kang, N. Han, P. Uthirakumar, and C.-H. Hong, “Impact of two-floor air prism arrays as an embedded reflector for enhancing the output power of InGaN/GaN light emitting diodes,” Appl. Phys. Lett.95(22), 221110 (2009).
[CrossRef]

Kim, H. K.

H. G. Kim, H. K. Kim, H. Y. Kim, J. H. Ryu, J. H. Kang, N. Han, P. Uthirakumar, and C.-H. Hong, “Impact of two-floor air prism arrays as an embedded reflector for enhancing the output power of InGaN/GaN light emitting diodes,” Appl. Phys. Lett.95(22), 221110 (2009).
[CrossRef]

Kim, H. Y.

H. G. Kim, H. K. Kim, H. Y. Kim, J. H. Ryu, J. H. Kang, N. Han, P. Uthirakumar, and C.-H. Hong, “Impact of two-floor air prism arrays as an embedded reflector for enhancing the output power of InGaN/GaN light emitting diodes,” Appl. Phys. Lett.95(22), 221110 (2009).
[CrossRef]

Kim, N. S.

J. H. Lee, S. M. Hwang, N. S. Kim, and J. H. Lee, “InGaN-based high-power flip-chip LEDs with deep-hole-patterned sapphire substrate by laser direct beam drilling,” IEEE Electron Device Lett.31(7), 698–700 (2010).
[CrossRef]

J. H. Lee, N. S. Kim, S. S. Hong, and J. H. Lee, “Enhanced extraction efficiency of InGaN-based light-emitting diodes using 100-kHz femtosecond-laser-scribing technology,” IEEE Electron Device Lett.31(3), 213–215 (2010).
[CrossRef]

Kim, N.-S.

J.-H. Lee, N.-S. Kim, and J.-H. Lee, “Development of chip separation technique for InGaN-based light emitting diodes,” IEEE J. Sel. Top. Quantum Electron.47(12), 1493–1498 (2011).
[CrossRef]

Kneissl, M.

W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, and N. M. Johnson, “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off,” Appl. Phys. Lett.75(10), 1360–1362 (1999).
[CrossRef]

Ko, T. K.

S.-J. Chang, D. S. Kuo, K. T. Lam, K. H. Wen, T. K. Ko, and S. J. Hon, “GaN-based LEDs with sapphire debris removed by phosphoric etching,” IEEE Trans. Compon. Packag. Manuf. Tech.2(2), 349–353 (2012).
[CrossRef]

Köhler, K.

R. Moser, C. Goßler, M. Kunzer, K. Köhler, W. Pletschen, J. Brunne, U. T. Schwarz, and J. Wagner, “Laser direct writing of GaN-based light-emitting diodes—The suitable laser source for mesa definition,” J. Appl. Phys.113(10), 103107 (2013).
[CrossRef]

Krames, M. R.

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett.89(7), 071109 (2006).
[CrossRef]

Krenn, J. R.

F. P. Wenzl, L. Kuna, C. Sommer, F. Reil, J. R. Krenn, P. Pachler, and P. Hartmann, “On the adjustment of the color temperature of white light-emitting diodes by femtosecond laser patterning,” IEEE Photon. Technol. Lett.23(2), 124–126 (2011).
[CrossRef]

L. Kuna, A. Haase, F. Reil, C. Sommer, J. R. Krenn, P. Hartmann, P. Pachler, S. Tasch, and F. P. Wenzl, “Surface texturing of high-power flip-chip LEDs by femtosecond laser direct structuring,” IEEE J. Sel. Top. Quantum Electron.15(4), 1250–1256 (2009).
[CrossRef]

Kumagai, M.

M. Kumagai, N. Uchiyama, E. Ohmura, R. Sugiura, K. Atsumi, and K. Fukumitsu, “Advanced dicing technology for semiconductor wafer-stealth dicing,” IEEE Trans. Semicond. Manuf.20(3), 259–265 (2007).
[CrossRef]

Kuna, L.

F. P. Wenzl, L. Kuna, C. Sommer, F. Reil, J. R. Krenn, P. Pachler, and P. Hartmann, “On the adjustment of the color temperature of white light-emitting diodes by femtosecond laser patterning,” IEEE Photon. Technol. Lett.23(2), 124–126 (2011).
[CrossRef]

L. Kuna, A. Haase, F. Reil, C. Sommer, J. R. Krenn, P. Hartmann, P. Pachler, S. Tasch, and F. P. Wenzl, “Surface texturing of high-power flip-chip LEDs by femtosecond laser direct structuring,” IEEE J. Sel. Top. Quantum Electron.15(4), 1250–1256 (2009).
[CrossRef]

Kunzer, M.

R. Moser, C. Goßler, M. Kunzer, K. Köhler, W. Pletschen, J. Brunne, U. T. Schwarz, and J. Wagner, “Laser direct writing of GaN-based light-emitting diodes—The suitable laser source for mesa definition,” J. Appl. Phys.113(10), 103107 (2013).
[CrossRef]

Kuo, D. M.

W. C. Lee, S. J. Wang, K. M. Uang, T. M. Chen, D. M. Kuo, P. R. Wang, and P. H. Wang, “Enhanced light output of GaN-based vertical structured light-emitting diodes with two-step surface roughening using KrF laser and chemical wet etching,” IEEE Photon. Technol. Lett.22(17), 1318–1320 (2010).
[CrossRef]

Kuo, D. S.

S.-J. Chang, D. S. Kuo, K. T. Lam, K. H. Wen, T. K. Ko, and S. J. Hon, “GaN-based LEDs with sapphire debris removed by phosphoric etching,” IEEE Trans. Compon. Packag. Manuf. Tech.2(2), 349–353 (2012).
[CrossRef]

Kuo, H.-C.

C.-F. Chu, F.-I. Lai, J.-T. Chu, C.-C. Yu, C.-F. Lin, H.-C. Kuo, and S. C. Wang, “Study of GaN light-emitting diodes fabricated by laser lift-off technique,” J. Appl. Phys.95(8), 3916–3921 (2004).
[CrossRef]

Lai, F.-I.

C.-F. Chu, F.-I. Lai, J.-T. Chu, C.-C. Yu, C.-F. Lin, H.-C. Kuo, and S. C. Wang, “Study of GaN light-emitting diodes fabricated by laser lift-off technique,” J. Appl. Phys.95(8), 3916–3921 (2004).
[CrossRef]

Lai, P. T.

W. Y. Fu, K. N. Hui, X. H. Wang, K. K. Y. Wong, P. T. Lai, and H. W. Choi, “Geometrical shaping of InGaN light-emitting diodes by laser micromachining,” IEEE Photon. Technol. Lett.21(15), 1078–1080 (2009).
[CrossRef]

Lai, W. C.

S. C. Shei, H. M. Lo, W. C. Lai, W. C. Lin, and S. J. Chang, “GaN-based LEDs with air voids prepared by laser scribing and chemical etching,” IEEE Photon. Technol. Lett.23(16), 1172–1174 (2011).
[CrossRef]

Lai, W.-C.

J.-T. Chen, W.-C. Lai, Y.-C. Chang, J.-K. Sheu, and W.-C. Sen, “GaN-based light emitting diodes with micro- and nano-patterned structures by femtosecond laser nonlinear decomposition,” Appl. Phys. Lett.101(13), 131103 (2012).
[CrossRef] [PubMed]

J.-T. Chen, W.-C. Lai, Y.-J. Kao, Y.-Y. Yang, and J.-K. Sheu, “Laser-induced periodic structures for light extraction efficiency enhancement of GaN-based light emitting diodes,” Opt. Express20(5), 5689–5695 (2012).
[CrossRef] [PubMed]

Lam, K. T.

S.-J. Chang, D. S. Kuo, K. T. Lam, K. H. Wen, T. K. Ko, and S. J. Hon, “GaN-based LEDs with sapphire debris removed by phosphoric etching,” IEEE Trans. Compon. Packag. Manuf. Tech.2(2), 349–353 (2012).
[CrossRef]

Lee, J. H.

J. H. Lee, S. M. Hwang, N. S. Kim, and J. H. Lee, “InGaN-based high-power flip-chip LEDs with deep-hole-patterned sapphire substrate by laser direct beam drilling,” IEEE Electron Device Lett.31(7), 698–700 (2010).
[CrossRef]

J. H. Lee, S. M. Hwang, N. S. Kim, and J. H. Lee, “InGaN-based high-power flip-chip LEDs with deep-hole-patterned sapphire substrate by laser direct beam drilling,” IEEE Electron Device Lett.31(7), 698–700 (2010).
[CrossRef]

J. H. Lee, N. S. Kim, S. S. Hong, and J. H. Lee, “Enhanced extraction efficiency of InGaN-based light-emitting diodes using 100-kHz femtosecond-laser-scribing technology,” IEEE Electron Device Lett.31(3), 213–215 (2010).
[CrossRef]

J. H. Lee, N. S. Kim, S. S. Hong, and J. H. Lee, “Enhanced extraction efficiency of InGaN-based light-emitting diodes using 100-kHz femtosecond-laser-scribing technology,” IEEE Electron Device Lett.31(3), 213–215 (2010).
[CrossRef]

Lee, J.-H.

J.-H. Lee, N.-S. Kim, and J.-H. Lee, “Development of chip separation technique for InGaN-based light emitting diodes,” IEEE J. Sel. Top. Quantum Electron.47(12), 1493–1498 (2011).
[CrossRef]

J.-H. Lee, N.-S. Kim, and J.-H. Lee, “Development of chip separation technique for InGaN-based light emitting diodes,” IEEE J. Sel. Top. Quantum Electron.47(12), 1493–1498 (2011).
[CrossRef]

Lee, W. C.

W. C. Lee, S. J. Wang, K. M. Uang, T. M. Chen, D. M. Kuo, P. R. Wang, and P. H. Wang, “Enhanced light output of GaN-based vertical structured light-emitting diodes with two-step surface roughening using KrF laser and chemical wet etching,” IEEE Photon. Technol. Lett.22(17), 1318–1320 (2010).
[CrossRef]

Lee, Y.-C.

Li, J.

Lin, C.-F.

C.-M. Lin, C.-F. Lin, B.-C. Shieh, T.-Y. Yu, S.-H. Chen, P.-H. Tsai, K.-T. Chen, J.-J. Dai, and T.-L. Tsai, “InGaN-based light-emitting diodes with a sawtooth-shaped sidewall on sapphire substrate,” IEEE Photon. Technol. Lett.24(13), 1133–1135 (2012).
[CrossRef]

W.-C. Huang, C.-F. Lin, T.-H. Hsieh, S.-H. Chen, M.-S. Lin, K.-T. Chen, C.-M. Lin, S.-H. Chen, and P. Han, “InGaN light emitting diodes with a laser-treated tapered GaN substrate,” Opt. Express19(S5Suppl 5), A1126–A1134 (2011).
[CrossRef] [PubMed]

C.-F. Chu, F.-I. Lai, J.-T. Chu, C.-C. Yu, C.-F. Lin, H.-C. Kuo, and S. C. Wang, “Study of GaN light-emitting diodes fabricated by laser lift-off technique,” J. Appl. Phys.95(8), 3916–3921 (2004).
[CrossRef]

Lin, C.-L.

Lin, C.-M.

C.-M. Lin, C.-F. Lin, B.-C. Shieh, T.-Y. Yu, S.-H. Chen, P.-H. Tsai, K.-T. Chen, J.-J. Dai, and T.-L. Tsai, “InGaN-based light-emitting diodes with a sawtooth-shaped sidewall on sapphire substrate,” IEEE Photon. Technol. Lett.24(13), 1133–1135 (2012).
[CrossRef]

W.-C. Huang, C.-F. Lin, T.-H. Hsieh, S.-H. Chen, M.-S. Lin, K.-T. Chen, C.-M. Lin, S.-H. Chen, and P. Han, “InGaN light emitting diodes with a laser-treated tapered GaN substrate,” Opt. Express19(S5Suppl 5), A1126–A1134 (2011).
[CrossRef] [PubMed]

Lin, M.-S.

Lin, W. C.

S. C. Shei, H. M. Lo, W. C. Lai, W. C. Lin, and S. J. Chang, “GaN-based LEDs with air voids prepared by laser scribing and chemical etching,” IEEE Photon. Technol. Lett.23(16), 1172–1174 (2011).
[CrossRef]

Lin, Y.-C.

Y.-H. Chang, Y.-C. Lin, Y.-S. Liu, and C.-Y. Liu, “Light-extraction enhancement by cavity array-textured N-polar GaN surfaces ablated using a KrF laser,” IEEE Photon. Technol. Lett.24(22), 2013–2015 (2012).
[CrossRef]

Liu, C.-Y.

Y.-H. Chang, Y.-C. Lin, Y.-S. Liu, and C.-Y. Liu, “Light-extraction enhancement by cavity array-textured N-polar GaN surfaces ablated using a KrF laser,” IEEE Photon. Technol. Lett.24(22), 2013–2015 (2012).
[CrossRef]

Liu, Y.-S.

Y.-H. Chang, Y.-C. Lin, Y.-S. Liu, and C.-Y. Liu, “Light-extraction enhancement by cavity array-textured N-polar GaN surfaces ablated using a KrF laser,” IEEE Photon. Technol. Lett.24(22), 2013–2015 (2012).
[CrossRef]

Lo, H. M.

S. C. Shei, H. M. Lo, W. C. Lai, W. C. Lin, and S. J. Chang, “GaN-based LEDs with air voids prepared by laser scribing and chemical etching,” IEEE Photon. Technol. Lett.23(16), 1172–1174 (2011).
[CrossRef]

Margalith, T.

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett.89(7), 071109 (2006).
[CrossRef]

Martin, P. S.

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett.89(7), 071109 (2006).
[CrossRef]

Mei, P.

W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, and N. M. Johnson, “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off,” Appl. Phys. Lett.75(10), 1360–1362 (1999).
[CrossRef]

Moser, R.

R. Moser, C. Goßler, M. Kunzer, K. Köhler, W. Pletschen, J. Brunne, U. T. Schwarz, and J. Wagner, “Laser direct writing of GaN-based light-emitting diodes—The suitable laser source for mesa definition,” J. Appl. Phys.113(10), 103107 (2013).
[CrossRef]

Nakamura, S.

T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett.84(6), 855–857 (2004).
[CrossRef]

Ohmura, E.

M. Kumagai, N. Uchiyama, E. Ohmura, R. Sugiura, K. Atsumi, and K. Fukumitsu, “Advanced dicing technology for semiconductor wafer-stealth dicing,” IEEE Trans. Semicond. Manuf.20(3), 259–265 (2007).
[CrossRef]

Pachler, P.

F. P. Wenzl, L. Kuna, C. Sommer, F. Reil, J. R. Krenn, P. Pachler, and P. Hartmann, “On the adjustment of the color temperature of white light-emitting diodes by femtosecond laser patterning,” IEEE Photon. Technol. Lett.23(2), 124–126 (2011).
[CrossRef]

L. Kuna, A. Haase, F. Reil, C. Sommer, J. R. Krenn, P. Hartmann, P. Pachler, S. Tasch, and F. P. Wenzl, “Surface texturing of high-power flip-chip LEDs by femtosecond laser direct structuring,” IEEE J. Sel. Top. Quantum Electron.15(4), 1250–1256 (2009).
[CrossRef]

Pletschen, W.

R. Moser, C. Goßler, M. Kunzer, K. Köhler, W. Pletschen, J. Brunne, U. T. Schwarz, and J. Wagner, “Laser direct writing of GaN-based light-emitting diodes—The suitable laser source for mesa definition,” J. Appl. Phys.113(10), 103107 (2013).
[CrossRef]

Reil, F.

F. P. Wenzl, L. Kuna, C. Sommer, F. Reil, J. R. Krenn, P. Pachler, and P. Hartmann, “On the adjustment of the color temperature of white light-emitting diodes by femtosecond laser patterning,” IEEE Photon. Technol. Lett.23(2), 124–126 (2011).
[CrossRef]

L. Kuna, A. Haase, F. Reil, C. Sommer, J. R. Krenn, P. Hartmann, P. Pachler, S. Tasch, and F. P. Wenzl, “Surface texturing of high-power flip-chip LEDs by femtosecond laser direct structuring,” IEEE J. Sel. Top. Quantum Electron.15(4), 1250–1256 (2009).
[CrossRef]

Romano, L. T.

W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, and N. M. Johnson, “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off,” Appl. Phys. Lett.75(10), 1360–1362 (1999).
[CrossRef]

Ryu, J. H.

H. G. Kim, H. K. Kim, H. Y. Kim, J. H. Ryu, J. H. Kang, N. Han, P. Uthirakumar, and C.-H. Hong, “Impact of two-floor air prism arrays as an embedded reflector for enhancing the output power of InGaN/GaN light emitting diodes,” Appl. Phys. Lett.95(22), 221110 (2009).
[CrossRef]

Sands, T.

W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, and N. M. Johnson, “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off,” Appl. Phys. Lett.75(10), 1360–1362 (1999).
[CrossRef]

Schwarz, U. T.

R. Moser, C. Goßler, M. Kunzer, K. Köhler, W. Pletschen, J. Brunne, U. T. Schwarz, and J. Wagner, “Laser direct writing of GaN-based light-emitting diodes—The suitable laser source for mesa definition,” J. Appl. Phys.113(10), 103107 (2013).
[CrossRef]

Sen, W.-C.

J.-T. Chen, W.-C. Lai, Y.-C. Chang, J.-K. Sheu, and W.-C. Sen, “GaN-based light emitting diodes with micro- and nano-patterned structures by femtosecond laser nonlinear decomposition,” Appl. Phys. Lett.101(13), 131103 (2012).
[CrossRef] [PubMed]

Sharma, R.

T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett.84(6), 855–857 (2004).
[CrossRef]

Shchekin, O. B.

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett.89(7), 071109 (2006).
[CrossRef]

Shei, S. C.

S. C. Shei, H. M. Lo, W. C. Lai, W. C. Lin, and S. J. Chang, “GaN-based LEDs with air voids prepared by laser scribing and chemical etching,” IEEE Photon. Technol. Lett.23(16), 1172–1174 (2011).
[CrossRef]

Sheu, J.-K.

J.-T. Chen, W.-C. Lai, Y.-C. Chang, J.-K. Sheu, and W.-C. Sen, “GaN-based light emitting diodes with micro- and nano-patterned structures by femtosecond laser nonlinear decomposition,” Appl. Phys. Lett.101(13), 131103 (2012).
[CrossRef] [PubMed]

J.-T. Chen, W.-C. Lai, Y.-J. Kao, Y.-Y. Yang, and J.-K. Sheu, “Laser-induced periodic structures for light extraction efficiency enhancement of GaN-based light emitting diodes,” Opt. Express20(5), 5689–5695 (2012).
[CrossRef] [PubMed]

Shieh, B.-C.

C.-M. Lin, C.-F. Lin, B.-C. Shieh, T.-Y. Yu, S.-H. Chen, P.-H. Tsai, K.-T. Chen, J.-J. Dai, and T.-L. Tsai, “InGaN-based light-emitting diodes with a sawtooth-shaped sidewall on sapphire substrate,” IEEE Photon. Technol. Lett.24(13), 1133–1135 (2012).
[CrossRef]

Sommer, C.

F. P. Wenzl, L. Kuna, C. Sommer, F. Reil, J. R. Krenn, P. Pachler, and P. Hartmann, “On the adjustment of the color temperature of white light-emitting diodes by femtosecond laser patterning,” IEEE Photon. Technol. Lett.23(2), 124–126 (2011).
[CrossRef]

L. Kuna, A. Haase, F. Reil, C. Sommer, J. R. Krenn, P. Hartmann, P. Pachler, S. Tasch, and F. P. Wenzl, “Surface texturing of high-power flip-chip LEDs by femtosecond laser direct structuring,” IEEE J. Sel. Top. Quantum Electron.15(4), 1250–1256 (2009).
[CrossRef]

Song, X.

Steigerwald, D. A.

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett.89(7), 071109 (2006).
[CrossRef]

Su, Y. K.

Sugiura, R.

M. Kumagai, N. Uchiyama, E. Ohmura, R. Sugiura, K. Atsumi, and K. Fukumitsu, “Advanced dicing technology for semiconductor wafer-stealth dicing,” IEEE Trans. Semicond. Manuf.20(3), 259–265 (2007).
[CrossRef]

Tasch, S.

L. Kuna, A. Haase, F. Reil, C. Sommer, J. R. Krenn, P. Hartmann, P. Pachler, S. Tasch, and F. P. Wenzl, “Surface texturing of high-power flip-chip LEDs by femtosecond laser direct structuring,” IEEE J. Sel. Top. Quantum Electron.15(4), 1250–1256 (2009).
[CrossRef]

Tongbo, W.

Z. Yiyun, G. Enqing, L. Zhi, W. Tongbo, L. Jing, Y. Xiaoyan, and W. Guohong, “Light extraction efficiency improvement by curved GaN sidewalls in InGaN-based light-emitting diodes,” IEEE Photon. Technol. Lett.24(4), 243–245 (2012).
[CrossRef]

Trottier, T. A.

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett.89(7), 071109 (2006).
[CrossRef]

Tsai, P.-H.

C.-M. Lin, C.-F. Lin, B.-C. Shieh, T.-Y. Yu, S.-H. Chen, P.-H. Tsai, K.-T. Chen, J.-J. Dai, and T.-L. Tsai, “InGaN-based light-emitting diodes with a sawtooth-shaped sidewall on sapphire substrate,” IEEE Photon. Technol. Lett.24(13), 1133–1135 (2012).
[CrossRef]

Tsai, T.-L.

C.-M. Lin, C.-F. Lin, B.-C. Shieh, T.-Y. Yu, S.-H. Chen, P.-H. Tsai, K.-T. Chen, J.-J. Dai, and T.-L. Tsai, “InGaN-based light-emitting diodes with a sawtooth-shaped sidewall on sapphire substrate,” IEEE Photon. Technol. Lett.24(13), 1133–1135 (2012).
[CrossRef]

Uang, K. M.

W. C. Lee, S. J. Wang, K. M. Uang, T. M. Chen, D. M. Kuo, P. R. Wang, and P. H. Wang, “Enhanced light output of GaN-based vertical structured light-emitting diodes with two-step surface roughening using KrF laser and chemical wet etching,” IEEE Photon. Technol. Lett.22(17), 1318–1320 (2010).
[CrossRef]

Uchiyama, N.

M. Kumagai, N. Uchiyama, E. Ohmura, R. Sugiura, K. Atsumi, and K. Fukumitsu, “Advanced dicing technology for semiconductor wafer-stealth dicing,” IEEE Trans. Semicond. Manuf.20(3), 259–265 (2007).
[CrossRef]

Uthirakumar, P.

H. G. Kim, H. K. Kim, H. Y. Kim, J. H. Ryu, J. H. Kang, N. Han, P. Uthirakumar, and C.-H. Hong, “Impact of two-floor air prism arrays as an embedded reflector for enhancing the output power of InGaN/GaN light emitting diodes,” Appl. Phys. Lett.95(22), 221110 (2009).
[CrossRef]

Wagner, J.

R. Moser, C. Goßler, M. Kunzer, K. Köhler, W. Pletschen, J. Brunne, U. T. Schwarz, and J. Wagner, “Laser direct writing of GaN-based light-emitting diodes—The suitable laser source for mesa definition,” J. Appl. Phys.113(10), 103107 (2013).
[CrossRef]

Wang, G.

Wang, P. H.

W. C. Lee, S. J. Wang, K. M. Uang, T. M. Chen, D. M. Kuo, P. R. Wang, and P. H. Wang, “Enhanced light output of GaN-based vertical structured light-emitting diodes with two-step surface roughening using KrF laser and chemical wet etching,” IEEE Photon. Technol. Lett.22(17), 1318–1320 (2010).
[CrossRef]

Wang, P. R.

W. C. Lee, S. J. Wang, K. M. Uang, T. M. Chen, D. M. Kuo, P. R. Wang, and P. H. Wang, “Enhanced light output of GaN-based vertical structured light-emitting diodes with two-step surface roughening using KrF laser and chemical wet etching,” IEEE Photon. Technol. Lett.22(17), 1318–1320 (2010).
[CrossRef]

Wang, S. C.

C.-F. Chu, F.-I. Lai, J.-T. Chu, C.-C. Yu, C.-F. Lin, H.-C. Kuo, and S. C. Wang, “Study of GaN light-emitting diodes fabricated by laser lift-off technique,” J. Appl. Phys.95(8), 3916–3921 (2004).
[CrossRef]

Wang, S. J.

W. C. Lee, S. J. Wang, K. M. Uang, T. M. Chen, D. M. Kuo, P. R. Wang, and P. H. Wang, “Enhanced light output of GaN-based vertical structured light-emitting diodes with two-step surface roughening using KrF laser and chemical wet etching,” IEEE Photon. Technol. Lett.22(17), 1318–1320 (2010).
[CrossRef]

Wang, X. H.

W. Y. Fu, K. N. Hui, X. H. Wang, K. K. Y. Wong, P. T. Lai, and H. W. Choi, “Geometrical shaping of InGaN light-emitting diodes by laser micromachining,” IEEE Photon. Technol. Lett.21(15), 1078–1080 (2009).
[CrossRef]

Wei, T.

Wen, K. H.

S.-J. Chang, D. S. Kuo, K. T. Lam, K. H. Wen, T. K. Ko, and S. J. Hon, “GaN-based LEDs with sapphire debris removed by phosphoric etching,” IEEE Trans. Compon. Packag. Manuf. Tech.2(2), 349–353 (2012).
[CrossRef]

Wenzl, F. P.

F. P. Wenzl, L. Kuna, C. Sommer, F. Reil, J. R. Krenn, P. Pachler, and P. Hartmann, “On the adjustment of the color temperature of white light-emitting diodes by femtosecond laser patterning,” IEEE Photon. Technol. Lett.23(2), 124–126 (2011).
[CrossRef]

L. Kuna, A. Haase, F. Reil, C. Sommer, J. R. Krenn, P. Hartmann, P. Pachler, S. Tasch, and F. P. Wenzl, “Surface texturing of high-power flip-chip LEDs by femtosecond laser direct structuring,” IEEE J. Sel. Top. Quantum Electron.15(4), 1250–1256 (2009).
[CrossRef]

Wong, K. K. Y.

W. Y. Fu, K. N. Hui, X. H. Wang, K. K. Y. Wong, P. T. Lai, and H. W. Choi, “Geometrical shaping of InGaN light-emitting diodes by laser micromachining,” IEEE Photon. Technol. Lett.21(15), 1078–1080 (2009).
[CrossRef]

Wong, W. S.

W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, and N. M. Johnson, “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off,” Appl. Phys. Lett.75(10), 1360–1362 (1999).
[CrossRef]

Xiaoyan, Y.

Z. Yiyun, G. Enqing, L. Zhi, W. Tongbo, L. Jing, Y. Xiaoyan, and W. Guohong, “Light extraction efficiency improvement by curved GaN sidewalls in InGaN-based light-emitting diodes,” IEEE Photon. Technol. Lett.24(4), 243–245 (2012).
[CrossRef]

Xie, H.

Yang, H.

Yang, Y.-Y.

Yi, X.

Yiyun, Z.

Z. Yiyun, G. Enqing, L. Zhi, W. Tongbo, L. Jing, Y. Xiaoyan, and W. Guohong, “Light extraction efficiency improvement by curved GaN sidewalls in InGaN-based light-emitting diodes,” IEEE Photon. Technol. Lett.24(4), 243–245 (2012).
[CrossRef]

Yu, C.-C.

C.-F. Chu, F.-I. Lai, J.-T. Chu, C.-C. Yu, C.-F. Lin, H.-C. Kuo, and S. C. Wang, “Study of GaN light-emitting diodes fabricated by laser lift-off technique,” J. Appl. Phys.95(8), 3916–3921 (2004).
[CrossRef]

Yu, T.-Y.

C.-M. Lin, C.-F. Lin, B.-C. Shieh, T.-Y. Yu, S.-H. Chen, P.-H. Tsai, K.-T. Chen, J.-J. Dai, and T.-L. Tsai, “InGaN-based light-emitting diodes with a sawtooth-shaped sidewall on sapphire substrate,” IEEE Photon. Technol. Lett.24(13), 1133–1135 (2012).
[CrossRef]

Zhang, Y.

Zheng, H.

Zhi, L.

Z. Yiyun, G. Enqing, L. Zhi, W. Tongbo, L. Jing, Y. Xiaoyan, and W. Guohong, “Light extraction efficiency improvement by curved GaN sidewalls in InGaN-based light-emitting diodes,” IEEE Photon. Technol. Lett.24(4), 243–245 (2012).
[CrossRef]

Appl. Phys. Lett. (5)

W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, and N. M. Johnson, “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off,” Appl. Phys. Lett.75(10), 1360–1362 (1999).
[CrossRef]

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett.89(7), 071109 (2006).
[CrossRef]

J.-T. Chen, W.-C. Lai, Y.-C. Chang, J.-K. Sheu, and W.-C. Sen, “GaN-based light emitting diodes with micro- and nano-patterned structures by femtosecond laser nonlinear decomposition,” Appl. Phys. Lett.101(13), 131103 (2012).
[CrossRef] [PubMed]

H. G. Kim, H. K. Kim, H. Y. Kim, J. H. Ryu, J. H. Kang, N. Han, P. Uthirakumar, and C.-H. Hong, “Impact of two-floor air prism arrays as an embedded reflector for enhancing the output power of InGaN/GaN light emitting diodes,” Appl. Phys. Lett.95(22), 221110 (2009).
[CrossRef]

T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett.84(6), 855–857 (2004).
[CrossRef]

IEEE Electron Device Lett. (2)

J. H. Lee, S. M. Hwang, N. S. Kim, and J. H. Lee, “InGaN-based high-power flip-chip LEDs with deep-hole-patterned sapphire substrate by laser direct beam drilling,” IEEE Electron Device Lett.31(7), 698–700 (2010).
[CrossRef]

J. H. Lee, N. S. Kim, S. S. Hong, and J. H. Lee, “Enhanced extraction efficiency of InGaN-based light-emitting diodes using 100-kHz femtosecond-laser-scribing technology,” IEEE Electron Device Lett.31(3), 213–215 (2010).
[CrossRef]

IEEE J. Sel. Top. Quantum Electron. (2)

L. Kuna, A. Haase, F. Reil, C. Sommer, J. R. Krenn, P. Hartmann, P. Pachler, S. Tasch, and F. P. Wenzl, “Surface texturing of high-power flip-chip LEDs by femtosecond laser direct structuring,” IEEE J. Sel. Top. Quantum Electron.15(4), 1250–1256 (2009).
[CrossRef]

J.-H. Lee, N.-S. Kim, and J.-H. Lee, “Development of chip separation technique for InGaN-based light emitting diodes,” IEEE J. Sel. Top. Quantum Electron.47(12), 1493–1498 (2011).
[CrossRef]

IEEE Photon. Technol. Lett. (7)

W. Y. Fu, K. N. Hui, X. H. Wang, K. K. Y. Wong, P. T. Lai, and H. W. Choi, “Geometrical shaping of InGaN light-emitting diodes by laser micromachining,” IEEE Photon. Technol. Lett.21(15), 1078–1080 (2009).
[CrossRef]

W. C. Lee, S. J. Wang, K. M. Uang, T. M. Chen, D. M. Kuo, P. R. Wang, and P. H. Wang, “Enhanced light output of GaN-based vertical structured light-emitting diodes with two-step surface roughening using KrF laser and chemical wet etching,” IEEE Photon. Technol. Lett.22(17), 1318–1320 (2010).
[CrossRef]

Y.-H. Chang, Y.-C. Lin, Y.-S. Liu, and C.-Y. Liu, “Light-extraction enhancement by cavity array-textured N-polar GaN surfaces ablated using a KrF laser,” IEEE Photon. Technol. Lett.24(22), 2013–2015 (2012).
[CrossRef]

F. P. Wenzl, L. Kuna, C. Sommer, F. Reil, J. R. Krenn, P. Pachler, and P. Hartmann, “On the adjustment of the color temperature of white light-emitting diodes by femtosecond laser patterning,” IEEE Photon. Technol. Lett.23(2), 124–126 (2011).
[CrossRef]

C.-M. Lin, C.-F. Lin, B.-C. Shieh, T.-Y. Yu, S.-H. Chen, P.-H. Tsai, K.-T. Chen, J.-J. Dai, and T.-L. Tsai, “InGaN-based light-emitting diodes with a sawtooth-shaped sidewall on sapphire substrate,” IEEE Photon. Technol. Lett.24(13), 1133–1135 (2012).
[CrossRef]

Z. Yiyun, G. Enqing, L. Zhi, W. Tongbo, L. Jing, Y. Xiaoyan, and W. Guohong, “Light extraction efficiency improvement by curved GaN sidewalls in InGaN-based light-emitting diodes,” IEEE Photon. Technol. Lett.24(4), 243–245 (2012).
[CrossRef]

S. C. Shei, H. M. Lo, W. C. Lai, W. C. Lin, and S. J. Chang, “GaN-based LEDs with air voids prepared by laser scribing and chemical etching,” IEEE Photon. Technol. Lett.23(16), 1172–1174 (2011).
[CrossRef]

IEEE Trans. Compon. Packag. Manuf. Tech. (1)

S.-J. Chang, D. S. Kuo, K. T. Lam, K. H. Wen, T. K. Ko, and S. J. Hon, “GaN-based LEDs with sapphire debris removed by phosphoric etching,” IEEE Trans. Compon. Packag. Manuf. Tech.2(2), 349–353 (2012).
[CrossRef]

IEEE Trans. Semicond. Manuf. (1)

M. Kumagai, N. Uchiyama, E. Ohmura, R. Sugiura, K. Atsumi, and K. Fukumitsu, “Advanced dicing technology for semiconductor wafer-stealth dicing,” IEEE Trans. Semicond. Manuf.20(3), 259–265 (2007).
[CrossRef]

J. Appl. Phys. (2)

C.-F. Chu, F.-I. Lai, J.-T. Chu, C.-C. Yu, C.-F. Lin, H.-C. Kuo, and S. C. Wang, “Study of GaN light-emitting diodes fabricated by laser lift-off technique,” J. Appl. Phys.95(8), 3916–3921 (2004).
[CrossRef]

R. Moser, C. Goßler, M. Kunzer, K. Köhler, W. Pletschen, J. Brunne, U. T. Schwarz, and J. Wagner, “Laser direct writing of GaN-based light-emitting diodes—The suitable laser source for mesa definition,” J. Appl. Phys.113(10), 103107 (2013).
[CrossRef]

J. Lightwave Technol. (1)

Opt. Express (4)

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