Abstract

Here we report for the first time a passive mode-locking of single section Fabry-Perot (FP) lasers based on InAs quantum dots(QDs) grown on (113)B InP substrate. Devices under study are a 1 and 2 mm long laser diodes emitting around 1.58 µm. Self-starting pulses with repetition rates around 23 and 39 GHz and pulse widths down to 1.5 ps are observed after propagation through a suitable length of single-mode fiber for intracavity dispersion compensation. A RF spectral width as low as 20 kHz has been obtained leading to a low timing jitter RMS.

© 2013 Optical Society of America

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    [CrossRef]
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    [CrossRef]
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    [CrossRef]
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    [CrossRef]
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    [CrossRef]
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    [CrossRef]
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2012 (3)

2011 (1)

Z. G. Lu, J. R. Liu, P. J. Poole, Z. J. Jiao, P. J. Barrios, D. Poitras, J. Caballero, and X. P. Zhang, “Ultra-high repetition rate InAs/InP quantum dot mode-locked lasers,” Opt. Commun.284(9), 2323–2326 (2011).
[CrossRef]

2008 (1)

F. Kefelian, S. O'Donoghue, M. T. Todaro, J. G. McInerney, and G. Huyet, “RF Linewidth in monolithic passively mode-locked semiconductor laser,” IEEE Photon. Technol. Lett.20(16), 1405–1407 (2008).
[CrossRef]

2007 (1)

E. U. Rafailov, M. A. Cataluna, and W. Sibbett, “Mode-locked quantum-dot lasers,” Nat. Photonics1(7), 395–401 (2007).
[CrossRef]

2005 (3)

E. U. Rafailov, M. A. Cataluna, W. Sibbett, N. D. Il’inskaya, Yu. M. Zadiranov, A. E. Zhukov, V. M. Ustinov, D. A. Livshits, A. R. Kovsh, and N. N. Ledentsov, “High-power picosecond and femtosecond pulse generation from a two-section mode-locked quantum-dot laser,” Appl. Phys. Lett.87(8), 081107 (2005).
[CrossRef]

P. Caroff, C. Paranthoen, C. Platz, O. Dehaese, H. Folliot, N. Bertru, C. Labbé, R. Piron, E. Homeyer, A. Le Corre, and S. Loualiche, “High-gain and low-threshold InAs quantum-dot lasers on InP,” Appl. Phys. Lett.87(24), 243107 (2005).
[CrossRef]

P. Caroff, N. Bertru, A. Le Corre, O. Dehaese, T. Rohel, I. Alghoraibi, H. Folliot, and S. Loualiche, “Achievement of high density InAs quantum dots on InP (311)B substrate emitting at 1.55 µm,” Jpn. J. Appl. Phys.44(34), L1069–L1071 (2005).
[CrossRef]

2004 (2)

T. Ohno, K. Sato, R. Iga, Y. Kondo, I. Ito, T. Furuta, K. Yoshino, and H. Ito, “Recovery of 160 GHz optical clock from 160 Gbit/s data stream using mode locked laser diode,” Electron. Lett.40(4), 265–267 (2004).
[CrossRef]

F. X. Kartner, U. Morgner, T. Schibli, R. Ell, H. A. Haus, J. G. Fujimoto, and E. P. Ippen, “Few-cycle pulses directly from a laser,” Top. Appl. Phys.95, 73–136 (2004).
[CrossRef]

2003 (1)

R. Schwertberger, D. Gold, J. P. Reithmaier, and A. Forchel, “Epitaxial growth of 1.55 µm emitting InAs quantum dashes on InP-based heterostructures by GS-MBE for long-wavelength laser applications,” J. Cryst. Growth251(1-4), 248–252 (2003).
[CrossRef]

2001 (1)

C. Paranthoen, N. Bertru, O. Dehaese, A. Le Corre, S. Loualiche, B. Lambert, and G. Patriarche, “Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm,” Appl. Phys. Lett.78(12), 1751 (2001).
[CrossRef]

1997 (1)

1993 (1)

H. A. Haus and A. Mecozzi, “Noise of mode-locked lasers,” IEEE J. Quantum Electron.29(3), 983–996 (1993).
[CrossRef]

1986 (1)

D. von der Linde, “Characterization of the noise in continuously operating mode-locked lasers,” Appl. Phys. B39(4), 201–217 (1986).
[CrossRef]

Accard, A.

Alghoraibi, I.

P. Caroff, N. Bertru, A. Le Corre, O. Dehaese, T. Rohel, I. Alghoraibi, H. Folliot, and S. Loualiche, “Achievement of high density InAs quantum dots on InP (311)B substrate emitting at 1.55 µm,” Jpn. J. Appl. Phys.44(34), L1069–L1071 (2005).
[CrossRef]

Barrios, P. J.

Z. G. Lu, J. R. Liu, P. J. Poole, Z. J. Jiao, P. J. Barrios, D. Poitras, J. Caballero, and X. P. Zhang, “Ultra-high repetition rate InAs/InP quantum dot mode-locked lasers,” Opt. Commun.284(9), 2323–2326 (2011).
[CrossRef]

Barry, L. P.

Bertru, N.

P. Caroff, C. Paranthoen, C. Platz, O. Dehaese, H. Folliot, N. Bertru, C. Labbé, R. Piron, E. Homeyer, A. Le Corre, and S. Loualiche, “High-gain and low-threshold InAs quantum-dot lasers on InP,” Appl. Phys. Lett.87(24), 243107 (2005).
[CrossRef]

P. Caroff, N. Bertru, A. Le Corre, O. Dehaese, T. Rohel, I. Alghoraibi, H. Folliot, and S. Loualiche, “Achievement of high density InAs quantum dots on InP (311)B substrate emitting at 1.55 µm,” Jpn. J. Appl. Phys.44(34), L1069–L1071 (2005).
[CrossRef]

C. Paranthoen, N. Bertru, O. Dehaese, A. Le Corre, S. Loualiche, B. Lambert, and G. Patriarche, “Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm,” Appl. Phys. Lett.78(12), 1751 (2001).
[CrossRef]

Caballero, J.

Z. G. Lu, J. R. Liu, P. J. Poole, Z. J. Jiao, P. J. Barrios, D. Poitras, J. Caballero, and X. P. Zhang, “Ultra-high repetition rate InAs/InP quantum dot mode-locked lasers,” Opt. Commun.284(9), 2323–2326 (2011).
[CrossRef]

Caroff, P.

P. Caroff, C. Paranthoen, C. Platz, O. Dehaese, H. Folliot, N. Bertru, C. Labbé, R. Piron, E. Homeyer, A. Le Corre, and S. Loualiche, “High-gain and low-threshold InAs quantum-dot lasers on InP,” Appl. Phys. Lett.87(24), 243107 (2005).
[CrossRef]

P. Caroff, N. Bertru, A. Le Corre, O. Dehaese, T. Rohel, I. Alghoraibi, H. Folliot, and S. Loualiche, “Achievement of high density InAs quantum dots on InP (311)B substrate emitting at 1.55 µm,” Jpn. J. Appl. Phys.44(34), L1069–L1071 (2005).
[CrossRef]

Cataluna, M. A.

E. U. Rafailov, M. A. Cataluna, and W. Sibbett, “Mode-locked quantum-dot lasers,” Nat. Photonics1(7), 395–401 (2007).
[CrossRef]

E. U. Rafailov, M. A. Cataluna, W. Sibbett, N. D. Il’inskaya, Yu. M. Zadiranov, A. E. Zhukov, V. M. Ustinov, D. A. Livshits, A. R. Kovsh, and N. N. Ledentsov, “High-power picosecond and femtosecond pulse generation from a two-section mode-locked quantum-dot laser,” Appl. Phys. Lett.87(8), 081107 (2005).
[CrossRef]

Chevalier, N.

M. Dontabactouny, R. Piron, K. Klaime, N. Chevalier, K. Tavernier, S. Loualiche, A. Le Corre, D. Larsson, C. Rosenberg, E. Semenova, and K. Yvind, “41 GHz and 10.6 GHz low threshold and low noise InAs/InP quantum dash two-section mode-locked lasers in L band,” J. Appl. Phys.111(2), 023102 (2012).
[CrossRef]

Dehaese, O.

P. Caroff, C. Paranthoen, C. Platz, O. Dehaese, H. Folliot, N. Bertru, C. Labbé, R. Piron, E. Homeyer, A. Le Corre, and S. Loualiche, “High-gain and low-threshold InAs quantum-dot lasers on InP,” Appl. Phys. Lett.87(24), 243107 (2005).
[CrossRef]

P. Caroff, N. Bertru, A. Le Corre, O. Dehaese, T. Rohel, I. Alghoraibi, H. Folliot, and S. Loualiche, “Achievement of high density InAs quantum dots on InP (311)B substrate emitting at 1.55 µm,” Jpn. J. Appl. Phys.44(34), L1069–L1071 (2005).
[CrossRef]

C. Paranthoen, N. Bertru, O. Dehaese, A. Le Corre, S. Loualiche, B. Lambert, and G. Patriarche, “Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm,” Appl. Phys. Lett.78(12), 1751 (2001).
[CrossRef]

Dontabactouny, M.

M. Dontabactouny, R. Piron, K. Klaime, N. Chevalier, K. Tavernier, S. Loualiche, A. Le Corre, D. Larsson, C. Rosenberg, E. Semenova, and K. Yvind, “41 GHz and 10.6 GHz low threshold and low noise InAs/InP quantum dash two-section mode-locked lasers in L band,” J. Appl. Phys.111(2), 023102 (2012).
[CrossRef]

Eliyahu, D.

Ell, R.

F. X. Kartner, U. Morgner, T. Schibli, R. Ell, H. A. Haus, J. G. Fujimoto, and E. P. Ippen, “Few-cycle pulses directly from a laser,” Top. Appl. Phys.95, 73–136 (2004).
[CrossRef]

Folliot, H.

P. Caroff, N. Bertru, A. Le Corre, O. Dehaese, T. Rohel, I. Alghoraibi, H. Folliot, and S. Loualiche, “Achievement of high density InAs quantum dots on InP (311)B substrate emitting at 1.55 µm,” Jpn. J. Appl. Phys.44(34), L1069–L1071 (2005).
[CrossRef]

P. Caroff, C. Paranthoen, C. Platz, O. Dehaese, H. Folliot, N. Bertru, C. Labbé, R. Piron, E. Homeyer, A. Le Corre, and S. Loualiche, “High-gain and low-threshold InAs quantum-dot lasers on InP,” Appl. Phys. Lett.87(24), 243107 (2005).
[CrossRef]

Forchel, A.

R. Schwertberger, D. Gold, J. P. Reithmaier, and A. Forchel, “Epitaxial growth of 1.55 µm emitting InAs quantum dashes on InP-based heterostructures by GS-MBE for long-wavelength laser applications,” J. Cryst. Growth251(1-4), 248–252 (2003).
[CrossRef]

Fujimoto, J. G.

F. X. Kartner, U. Morgner, T. Schibli, R. Ell, H. A. Haus, J. G. Fujimoto, and E. P. Ippen, “Few-cycle pulses directly from a laser,” Top. Appl. Phys.95, 73–136 (2004).
[CrossRef]

Furuta, T.

T. Ohno, K. Sato, R. Iga, Y. Kondo, I. Ito, T. Furuta, K. Yoshino, and H. Ito, “Recovery of 160 GHz optical clock from 160 Gbit/s data stream using mode locked laser diode,” Electron. Lett.40(4), 265–267 (2004).
[CrossRef]

Gold, D.

R. Schwertberger, D. Gold, J. P. Reithmaier, and A. Forchel, “Epitaxial growth of 1.55 µm emitting InAs quantum dashes on InP-based heterostructures by GS-MBE for long-wavelength laser applications,” J. Cryst. Growth251(1-4), 248–252 (2003).
[CrossRef]

Haus, H. A.

F. X. Kartner, U. Morgner, T. Schibli, R. Ell, H. A. Haus, J. G. Fujimoto, and E. P. Ippen, “Few-cycle pulses directly from a laser,” Top. Appl. Phys.95, 73–136 (2004).
[CrossRef]

H. A. Haus and A. Mecozzi, “Noise of mode-locked lasers,” IEEE J. Quantum Electron.29(3), 983–996 (1993).
[CrossRef]

Homeyer, E.

P. Caroff, C. Paranthoen, C. Platz, O. Dehaese, H. Folliot, N. Bertru, C. Labbé, R. Piron, E. Homeyer, A. Le Corre, and S. Loualiche, “High-gain and low-threshold InAs quantum-dot lasers on InP,” Appl. Phys. Lett.87(24), 243107 (2005).
[CrossRef]

Huyet, G.

F. Kefelian, S. O'Donoghue, M. T. Todaro, J. G. McInerney, and G. Huyet, “RF Linewidth in monolithic passively mode-locked semiconductor laser,” IEEE Photon. Technol. Lett.20(16), 1405–1407 (2008).
[CrossRef]

Iga, R.

T. Ohno, K. Sato, R. Iga, Y. Kondo, I. Ito, T. Furuta, K. Yoshino, and H. Ito, “Recovery of 160 GHz optical clock from 160 Gbit/s data stream using mode locked laser diode,” Electron. Lett.40(4), 265–267 (2004).
[CrossRef]

Il’inskaya, N. D.

E. U. Rafailov, M. A. Cataluna, W. Sibbett, N. D. Il’inskaya, Yu. M. Zadiranov, A. E. Zhukov, V. M. Ustinov, D. A. Livshits, A. R. Kovsh, and N. N. Ledentsov, “High-power picosecond and femtosecond pulse generation from a two-section mode-locked quantum-dot laser,” Appl. Phys. Lett.87(8), 081107 (2005).
[CrossRef]

Ippen, E. P.

F. X. Kartner, U. Morgner, T. Schibli, R. Ell, H. A. Haus, J. G. Fujimoto, and E. P. Ippen, “Few-cycle pulses directly from a laser,” Top. Appl. Phys.95, 73–136 (2004).
[CrossRef]

Ito, H.

T. Ohno, K. Sato, R. Iga, Y. Kondo, I. Ito, T. Furuta, K. Yoshino, and H. Ito, “Recovery of 160 GHz optical clock from 160 Gbit/s data stream using mode locked laser diode,” Electron. Lett.40(4), 265–267 (2004).
[CrossRef]

Ito, I.

T. Ohno, K. Sato, R. Iga, Y. Kondo, I. Ito, T. Furuta, K. Yoshino, and H. Ito, “Recovery of 160 GHz optical clock from 160 Gbit/s data stream using mode locked laser diode,” Electron. Lett.40(4), 265–267 (2004).
[CrossRef]

Jiao, Z. J.

Z. G. Lu, J. R. Liu, P. J. Poole, Z. J. Jiao, P. J. Barrios, D. Poitras, J. Caballero, and X. P. Zhang, “Ultra-high repetition rate InAs/InP quantum dot mode-locked lasers,” Opt. Commun.284(9), 2323–2326 (2011).
[CrossRef]

Kartner, F. X.

F. X. Kartner, U. Morgner, T. Schibli, R. Ell, H. A. Haus, J. G. Fujimoto, and E. P. Ippen, “Few-cycle pulses directly from a laser,” Top. Appl. Phys.95, 73–136 (2004).
[CrossRef]

Kefelian, F.

F. Kefelian, S. O'Donoghue, M. T. Todaro, J. G. McInerney, and G. Huyet, “RF Linewidth in monolithic passively mode-locked semiconductor laser,” IEEE Photon. Technol. Lett.20(16), 1405–1407 (2008).
[CrossRef]

Klaime, K.

M. Dontabactouny, R. Piron, K. Klaime, N. Chevalier, K. Tavernier, S. Loualiche, A. Le Corre, D. Larsson, C. Rosenberg, E. Semenova, and K. Yvind, “41 GHz and 10.6 GHz low threshold and low noise InAs/InP quantum dash two-section mode-locked lasers in L band,” J. Appl. Phys.111(2), 023102 (2012).
[CrossRef]

Kondo, Y.

T. Ohno, K. Sato, R. Iga, Y. Kondo, I. Ito, T. Furuta, K. Yoshino, and H. Ito, “Recovery of 160 GHz optical clock from 160 Gbit/s data stream using mode locked laser diode,” Electron. Lett.40(4), 265–267 (2004).
[CrossRef]

Kovsh, A. R.

E. U. Rafailov, M. A. Cataluna, W. Sibbett, N. D. Il’inskaya, Yu. M. Zadiranov, A. E. Zhukov, V. M. Ustinov, D. A. Livshits, A. R. Kovsh, and N. N. Ledentsov, “High-power picosecond and femtosecond pulse generation from a two-section mode-locked quantum-dot laser,” Appl. Phys. Lett.87(8), 081107 (2005).
[CrossRef]

Labbé, C.

P. Caroff, C. Paranthoen, C. Platz, O. Dehaese, H. Folliot, N. Bertru, C. Labbé, R. Piron, E. Homeyer, A. Le Corre, and S. Loualiche, “High-gain and low-threshold InAs quantum-dot lasers on InP,” Appl. Phys. Lett.87(24), 243107 (2005).
[CrossRef]

Lambert, B.

C. Paranthoen, N. Bertru, O. Dehaese, A. Le Corre, S. Loualiche, B. Lambert, and G. Patriarche, “Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm,” Appl. Phys. Lett.78(12), 1751 (2001).
[CrossRef]

Larsson, D.

M. Dontabactouny, R. Piron, K. Klaime, N. Chevalier, K. Tavernier, S. Loualiche, A. Le Corre, D. Larsson, C. Rosenberg, E. Semenova, and K. Yvind, “41 GHz and 10.6 GHz low threshold and low noise InAs/InP quantum dash two-section mode-locked lasers in L band,” J. Appl. Phys.111(2), 023102 (2012).
[CrossRef]

Le Corre, A.

M. Dontabactouny, R. Piron, K. Klaime, N. Chevalier, K. Tavernier, S. Loualiche, A. Le Corre, D. Larsson, C. Rosenberg, E. Semenova, and K. Yvind, “41 GHz and 10.6 GHz low threshold and low noise InAs/InP quantum dash two-section mode-locked lasers in L band,” J. Appl. Phys.111(2), 023102 (2012).
[CrossRef]

P. Caroff, C. Paranthoen, C. Platz, O. Dehaese, H. Folliot, N. Bertru, C. Labbé, R. Piron, E. Homeyer, A. Le Corre, and S. Loualiche, “High-gain and low-threshold InAs quantum-dot lasers on InP,” Appl. Phys. Lett.87(24), 243107 (2005).
[CrossRef]

P. Caroff, N. Bertru, A. Le Corre, O. Dehaese, T. Rohel, I. Alghoraibi, H. Folliot, and S. Loualiche, “Achievement of high density InAs quantum dots on InP (311)B substrate emitting at 1.55 µm,” Jpn. J. Appl. Phys.44(34), L1069–L1071 (2005).
[CrossRef]

C. Paranthoen, N. Bertru, O. Dehaese, A. Le Corre, S. Loualiche, B. Lambert, and G. Patriarche, “Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm,” Appl. Phys. Lett.78(12), 1751 (2001).
[CrossRef]

Ledentsov, N. N.

E. U. Rafailov, M. A. Cataluna, W. Sibbett, N. D. Il’inskaya, Yu. M. Zadiranov, A. E. Zhukov, V. M. Ustinov, D. A. Livshits, A. R. Kovsh, and N. N. Ledentsov, “High-power picosecond and femtosecond pulse generation from a two-section mode-locked quantum-dot laser,” Appl. Phys. Lett.87(8), 081107 (2005).
[CrossRef]

Lelarge, F.

Liu, J. R.

Z. G. Lu, J. R. Liu, P. J. Poole, Z. J. Jiao, P. J. Barrios, D. Poitras, J. Caballero, and X. P. Zhang, “Ultra-high repetition rate InAs/InP quantum dot mode-locked lasers,” Opt. Commun.284(9), 2323–2326 (2011).
[CrossRef]

Livshits, D. A.

E. U. Rafailov, M. A. Cataluna, W. Sibbett, N. D. Il’inskaya, Yu. M. Zadiranov, A. E. Zhukov, V. M. Ustinov, D. A. Livshits, A. R. Kovsh, and N. N. Ledentsov, “High-power picosecond and femtosecond pulse generation from a two-section mode-locked quantum-dot laser,” Appl. Phys. Lett.87(8), 081107 (2005).
[CrossRef]

Loualiche, S.

M. Dontabactouny, R. Piron, K. Klaime, N. Chevalier, K. Tavernier, S. Loualiche, A. Le Corre, D. Larsson, C. Rosenberg, E. Semenova, and K. Yvind, “41 GHz and 10.6 GHz low threshold and low noise InAs/InP quantum dash two-section mode-locked lasers in L band,” J. Appl. Phys.111(2), 023102 (2012).
[CrossRef]

P. Caroff, C. Paranthoen, C. Platz, O. Dehaese, H. Folliot, N. Bertru, C. Labbé, R. Piron, E. Homeyer, A. Le Corre, and S. Loualiche, “High-gain and low-threshold InAs quantum-dot lasers on InP,” Appl. Phys. Lett.87(24), 243107 (2005).
[CrossRef]

P. Caroff, N. Bertru, A. Le Corre, O. Dehaese, T. Rohel, I. Alghoraibi, H. Folliot, and S. Loualiche, “Achievement of high density InAs quantum dots on InP (311)B substrate emitting at 1.55 µm,” Jpn. J. Appl. Phys.44(34), L1069–L1071 (2005).
[CrossRef]

C. Paranthoen, N. Bertru, O. Dehaese, A. Le Corre, S. Loualiche, B. Lambert, and G. Patriarche, “Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm,” Appl. Phys. Lett.78(12), 1751 (2001).
[CrossRef]

Lu, Z. G.

Z. G. Lu, J. R. Liu, P. J. Poole, Z. J. Jiao, P. J. Barrios, D. Poitras, J. Caballero, and X. P. Zhang, “Ultra-high repetition rate InAs/InP quantum dot mode-locked lasers,” Opt. Commun.284(9), 2323–2326 (2011).
[CrossRef]

Martinez, A.

McInerney, J. G.

F. Kefelian, S. O'Donoghue, M. T. Todaro, J. G. McInerney, and G. Huyet, “RF Linewidth in monolithic passively mode-locked semiconductor laser,” IEEE Photon. Technol. Lett.20(16), 1405–1407 (2008).
[CrossRef]

Mecozzi, A.

H. A. Haus and A. Mecozzi, “Noise of mode-locked lasers,” IEEE J. Quantum Electron.29(3), 983–996 (1993).
[CrossRef]

Merghem, K.

Morgner, U.

F. X. Kartner, U. Morgner, T. Schibli, R. Ell, H. A. Haus, J. G. Fujimoto, and E. P. Ippen, “Few-cycle pulses directly from a laser,” Top. Appl. Phys.95, 73–136 (2004).
[CrossRef]

Murdoch, S. G.

O'Donoghue, S.

F. Kefelian, S. O'Donoghue, M. T. Todaro, J. G. McInerney, and G. Huyet, “RF Linewidth in monolithic passively mode-locked semiconductor laser,” IEEE Photon. Technol. Lett.20(16), 1405–1407 (2008).
[CrossRef]

Ohno, T.

T. Ohno, K. Sato, R. Iga, Y. Kondo, I. Ito, T. Furuta, K. Yoshino, and H. Ito, “Recovery of 160 GHz optical clock from 160 Gbit/s data stream using mode locked laser diode,” Electron. Lett.40(4), 265–267 (2004).
[CrossRef]

Paranthoen, C.

P. Caroff, C. Paranthoen, C. Platz, O. Dehaese, H. Folliot, N. Bertru, C. Labbé, R. Piron, E. Homeyer, A. Le Corre, and S. Loualiche, “High-gain and low-threshold InAs quantum-dot lasers on InP,” Appl. Phys. Lett.87(24), 243107 (2005).
[CrossRef]

C. Paranthoen, N. Bertru, O. Dehaese, A. Le Corre, S. Loualiche, B. Lambert, and G. Patriarche, “Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm,” Appl. Phys. Lett.78(12), 1751 (2001).
[CrossRef]

Patriarche, G.

C. Paranthoen, N. Bertru, O. Dehaese, A. Le Corre, S. Loualiche, B. Lambert, and G. Patriarche, “Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm,” Appl. Phys. Lett.78(12), 1751 (2001).
[CrossRef]

Piron, R.

M. Dontabactouny, R. Piron, K. Klaime, N. Chevalier, K. Tavernier, S. Loualiche, A. Le Corre, D. Larsson, C. Rosenberg, E. Semenova, and K. Yvind, “41 GHz and 10.6 GHz low threshold and low noise InAs/InP quantum dash two-section mode-locked lasers in L band,” J. Appl. Phys.111(2), 023102 (2012).
[CrossRef]

P. Caroff, C. Paranthoen, C. Platz, O. Dehaese, H. Folliot, N. Bertru, C. Labbé, R. Piron, E. Homeyer, A. Le Corre, and S. Loualiche, “High-gain and low-threshold InAs quantum-dot lasers on InP,” Appl. Phys. Lett.87(24), 243107 (2005).
[CrossRef]

Platz, C.

P. Caroff, C. Paranthoen, C. Platz, O. Dehaese, H. Folliot, N. Bertru, C. Labbé, R. Piron, E. Homeyer, A. Le Corre, and S. Loualiche, “High-gain and low-threshold InAs quantum-dot lasers on InP,” Appl. Phys. Lett.87(24), 243107 (2005).
[CrossRef]

Poitras, D.

Z. G. Lu, J. R. Liu, P. J. Poole, Z. J. Jiao, P. J. Barrios, D. Poitras, J. Caballero, and X. P. Zhang, “Ultra-high repetition rate InAs/InP quantum dot mode-locked lasers,” Opt. Commun.284(9), 2323–2326 (2011).
[CrossRef]

Poole, P. J.

Z. G. Lu, J. R. Liu, P. J. Poole, Z. J. Jiao, P. J. Barrios, D. Poitras, J. Caballero, and X. P. Zhang, “Ultra-high repetition rate InAs/InP quantum dot mode-locked lasers,” Opt. Commun.284(9), 2323–2326 (2011).
[CrossRef]

Rafailov, E. U.

E. U. Rafailov, M. A. Cataluna, and W. Sibbett, “Mode-locked quantum-dot lasers,” Nat. Photonics1(7), 395–401 (2007).
[CrossRef]

E. U. Rafailov, M. A. Cataluna, W. Sibbett, N. D. Il’inskaya, Yu. M. Zadiranov, A. E. Zhukov, V. M. Ustinov, D. A. Livshits, A. R. Kovsh, and N. N. Ledentsov, “High-power picosecond and femtosecond pulse generation from a two-section mode-locked quantum-dot laser,” Appl. Phys. Lett.87(8), 081107 (2005).
[CrossRef]

Ramdane, A.

Reithmaier, J. P.

R. Schwertberger, D. Gold, J. P. Reithmaier, and A. Forchel, “Epitaxial growth of 1.55 µm emitting InAs quantum dashes on InP-based heterostructures by GS-MBE for long-wavelength laser applications,” J. Cryst. Growth251(1-4), 248–252 (2003).
[CrossRef]

Rohel, T.

P. Caroff, N. Bertru, A. Le Corre, O. Dehaese, T. Rohel, I. Alghoraibi, H. Folliot, and S. Loualiche, “Achievement of high density InAs quantum dots on InP (311)B substrate emitting at 1.55 µm,” Jpn. J. Appl. Phys.44(34), L1069–L1071 (2005).
[CrossRef]

Rosales, R.

Rosenberg, C.

M. Dontabactouny, R. Piron, K. Klaime, N. Chevalier, K. Tavernier, S. Loualiche, A. Le Corre, D. Larsson, C. Rosenberg, E. Semenova, and K. Yvind, “41 GHz and 10.6 GHz low threshold and low noise InAs/InP quantum dash two-section mode-locked lasers in L band,” J. Appl. Phys.111(2), 023102 (2012).
[CrossRef]

Salvatore, R. A.

Sato, K.

T. Ohno, K. Sato, R. Iga, Y. Kondo, I. Ito, T. Furuta, K. Yoshino, and H. Ito, “Recovery of 160 GHz optical clock from 160 Gbit/s data stream using mode locked laser diode,” Electron. Lett.40(4), 265–267 (2004).
[CrossRef]

Schibli, T.

F. X. Kartner, U. Morgner, T. Schibli, R. Ell, H. A. Haus, J. G. Fujimoto, and E. P. Ippen, “Few-cycle pulses directly from a laser,” Top. Appl. Phys.95, 73–136 (2004).
[CrossRef]

Schwertberger, R.

R. Schwertberger, D. Gold, J. P. Reithmaier, and A. Forchel, “Epitaxial growth of 1.55 µm emitting InAs quantum dashes on InP-based heterostructures by GS-MBE for long-wavelength laser applications,” J. Cryst. Growth251(1-4), 248–252 (2003).
[CrossRef]

Semenova, E.

M. Dontabactouny, R. Piron, K. Klaime, N. Chevalier, K. Tavernier, S. Loualiche, A. Le Corre, D. Larsson, C. Rosenberg, E. Semenova, and K. Yvind, “41 GHz and 10.6 GHz low threshold and low noise InAs/InP quantum dash two-section mode-locked lasers in L band,” J. Appl. Phys.111(2), 023102 (2012).
[CrossRef]

Sibbett, W.

E. U. Rafailov, M. A. Cataluna, and W. Sibbett, “Mode-locked quantum-dot lasers,” Nat. Photonics1(7), 395–401 (2007).
[CrossRef]

E. U. Rafailov, M. A. Cataluna, W. Sibbett, N. D. Il’inskaya, Yu. M. Zadiranov, A. E. Zhukov, V. M. Ustinov, D. A. Livshits, A. R. Kovsh, and N. N. Ledentsov, “High-power picosecond and femtosecond pulse generation from a two-section mode-locked quantum-dot laser,” Appl. Phys. Lett.87(8), 081107 (2005).
[CrossRef]

Tavernier, K.

M. Dontabactouny, R. Piron, K. Klaime, N. Chevalier, K. Tavernier, S. Loualiche, A. Le Corre, D. Larsson, C. Rosenberg, E. Semenova, and K. Yvind, “41 GHz and 10.6 GHz low threshold and low noise InAs/InP quantum dash two-section mode-locked lasers in L band,” J. Appl. Phys.111(2), 023102 (2012).
[CrossRef]

Todaro, M. T.

F. Kefelian, S. O'Donoghue, M. T. Todaro, J. G. McInerney, and G. Huyet, “RF Linewidth in monolithic passively mode-locked semiconductor laser,” IEEE Photon. Technol. Lett.20(16), 1405–1407 (2008).
[CrossRef]

Ustinov, V. M.

E. U. Rafailov, M. A. Cataluna, W. Sibbett, N. D. Il’inskaya, Yu. M. Zadiranov, A. E. Zhukov, V. M. Ustinov, D. A. Livshits, A. R. Kovsh, and N. N. Ledentsov, “High-power picosecond and femtosecond pulse generation from a two-section mode-locked quantum-dot laser,” Appl. Phys. Lett.87(8), 081107 (2005).
[CrossRef]

von der Linde, D.

D. von der Linde, “Characterization of the noise in continuously operating mode-locked lasers,” Appl. Phys. B39(4), 201–217 (1986).
[CrossRef]

Watts, R. T.

Yariv, A.

Yoshino, K.

T. Ohno, K. Sato, R. Iga, Y. Kondo, I. Ito, T. Furuta, K. Yoshino, and H. Ito, “Recovery of 160 GHz optical clock from 160 Gbit/s data stream using mode locked laser diode,” Electron. Lett.40(4), 265–267 (2004).
[CrossRef]

Yvind, K.

M. Dontabactouny, R. Piron, K. Klaime, N. Chevalier, K. Tavernier, S. Loualiche, A. Le Corre, D. Larsson, C. Rosenberg, E. Semenova, and K. Yvind, “41 GHz and 10.6 GHz low threshold and low noise InAs/InP quantum dash two-section mode-locked lasers in L band,” J. Appl. Phys.111(2), 023102 (2012).
[CrossRef]

Zadiranov, Yu. M.

E. U. Rafailov, M. A. Cataluna, W. Sibbett, N. D. Il’inskaya, Yu. M. Zadiranov, A. E. Zhukov, V. M. Ustinov, D. A. Livshits, A. R. Kovsh, and N. N. Ledentsov, “High-power picosecond and femtosecond pulse generation from a two-section mode-locked quantum-dot laser,” Appl. Phys. Lett.87(8), 081107 (2005).
[CrossRef]

Zhang, X. P.

Z. G. Lu, J. R. Liu, P. J. Poole, Z. J. Jiao, P. J. Barrios, D. Poitras, J. Caballero, and X. P. Zhang, “Ultra-high repetition rate InAs/InP quantum dot mode-locked lasers,” Opt. Commun.284(9), 2323–2326 (2011).
[CrossRef]

Zhukov, A. E.

E. U. Rafailov, M. A. Cataluna, W. Sibbett, N. D. Il’inskaya, Yu. M. Zadiranov, A. E. Zhukov, V. M. Ustinov, D. A. Livshits, A. R. Kovsh, and N. N. Ledentsov, “High-power picosecond and femtosecond pulse generation from a two-section mode-locked quantum-dot laser,” Appl. Phys. Lett.87(8), 081107 (2005).
[CrossRef]

Appl. Phys. B (1)

D. von der Linde, “Characterization of the noise in continuously operating mode-locked lasers,” Appl. Phys. B39(4), 201–217 (1986).
[CrossRef]

Appl. Phys. Lett. (3)

C. Paranthoen, N. Bertru, O. Dehaese, A. Le Corre, S. Loualiche, B. Lambert, and G. Patriarche, “Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm,” Appl. Phys. Lett.78(12), 1751 (2001).
[CrossRef]

E. U. Rafailov, M. A. Cataluna, W. Sibbett, N. D. Il’inskaya, Yu. M. Zadiranov, A. E. Zhukov, V. M. Ustinov, D. A. Livshits, A. R. Kovsh, and N. N. Ledentsov, “High-power picosecond and femtosecond pulse generation from a two-section mode-locked quantum-dot laser,” Appl. Phys. Lett.87(8), 081107 (2005).
[CrossRef]

P. Caroff, C. Paranthoen, C. Platz, O. Dehaese, H. Folliot, N. Bertru, C. Labbé, R. Piron, E. Homeyer, A. Le Corre, and S. Loualiche, “High-gain and low-threshold InAs quantum-dot lasers on InP,” Appl. Phys. Lett.87(24), 243107 (2005).
[CrossRef]

Electron. Lett. (1)

T. Ohno, K. Sato, R. Iga, Y. Kondo, I. Ito, T. Furuta, K. Yoshino, and H. Ito, “Recovery of 160 GHz optical clock from 160 Gbit/s data stream using mode locked laser diode,” Electron. Lett.40(4), 265–267 (2004).
[CrossRef]

IEEE J. Quantum Electron. (1)

H. A. Haus and A. Mecozzi, “Noise of mode-locked lasers,” IEEE J. Quantum Electron.29(3), 983–996 (1993).
[CrossRef]

IEEE Photon. Technol. Lett. (1)

F. Kefelian, S. O'Donoghue, M. T. Todaro, J. G. McInerney, and G. Huyet, “RF Linewidth in monolithic passively mode-locked semiconductor laser,” IEEE Photon. Technol. Lett.20(16), 1405–1407 (2008).
[CrossRef]

J. Appl. Phys. (1)

M. Dontabactouny, R. Piron, K. Klaime, N. Chevalier, K. Tavernier, S. Loualiche, A. Le Corre, D. Larsson, C. Rosenberg, E. Semenova, and K. Yvind, “41 GHz and 10.6 GHz low threshold and low noise InAs/InP quantum dash two-section mode-locked lasers in L band,” J. Appl. Phys.111(2), 023102 (2012).
[CrossRef]

J. Cryst. Growth (1)

R. Schwertberger, D. Gold, J. P. Reithmaier, and A. Forchel, “Epitaxial growth of 1.55 µm emitting InAs quantum dashes on InP-based heterostructures by GS-MBE for long-wavelength laser applications,” J. Cryst. Growth251(1-4), 248–252 (2003).
[CrossRef]

J. Opt. Soc. Am. B (1)

Jpn. J. Appl. Phys. (1)

P. Caroff, N. Bertru, A. Le Corre, O. Dehaese, T. Rohel, I. Alghoraibi, H. Folliot, and S. Loualiche, “Achievement of high density InAs quantum dots on InP (311)B substrate emitting at 1.55 µm,” Jpn. J. Appl. Phys.44(34), L1069–L1071 (2005).
[CrossRef]

Nat. Photonics (1)

E. U. Rafailov, M. A. Cataluna, and W. Sibbett, “Mode-locked quantum-dot lasers,” Nat. Photonics1(7), 395–401 (2007).
[CrossRef]

Opt. Commun. (1)

Z. G. Lu, J. R. Liu, P. J. Poole, Z. J. Jiao, P. J. Barrios, D. Poitras, J. Caballero, and X. P. Zhang, “Ultra-high repetition rate InAs/InP quantum dot mode-locked lasers,” Opt. Commun.284(9), 2323–2326 (2011).
[CrossRef]

Opt. Express (2)

Top. Appl. Phys. (1)

F. X. Kartner, U. Morgner, T. Schibli, R. Ell, H. A. Haus, J. G. Fujimoto, and E. P. Ippen, “Few-cycle pulses directly from a laser,” Top. Appl. Phys.95, 73–136 (2004).
[CrossRef]

Other (1)

K. Klaime, R. Piron, C. Paranthoen, T. Batte, F. Grillot, O. Dehaese, S. Loualiche, A. Le Corre, R. Rosales, K. Merghem, A. Martinez, and A. Ramdane, “ 20 GHz to 83 GHz single section InAs/InP quantum dot mode-locked lasers grown on (001) misoriented substrate,” IPRM-2012 proceeding, 181–184 (2012).

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Figures (5)

Fig. 1
Fig. 1

(a) Schematic of the epitaxial structure of the InAs/InP QDs MLL under study. (b) Atomic force microscopy of an uncoated layer of QDs.Threshold current density evolution versus reciprocal cavity length for the 9 QDs layer laser, inset: photoluminescence measured at 300K for the investigated 9 QDs layers sample.

Fig. 2
Fig. 2

(a) Photoluminescence measured at 300K for the investigated 9 QDs layers sample. (b) Threshold current density evolution versus reciprocal cavity length for the 9 QDs layer laser.

Fig. 3
Fig. 3

RF peak width Δf versus the injection current density J of the 1 mm (a) and 2 mm (b) cavity length devices, (inset): RF spectrum for a gain current of 192 and 361 mA respectively.

Fig. 4
Fig. 4

Optical spectra of the 1 mm laser (a) and the 2 mm laser (b).

Fig. 5
Fig. 5

Optical pulse width Δτ versus the injection current density J of the 1mm (a) and 2 mm (b) cavity length devices, (inset): Measured autocorrelation trace, for a gain current of 192 and 361 mA and after propagation in 220 and 230 m of SMF respectively.

Equations (1)

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σ=  T Δf 2 π 3/2 1 f d 1 f u ,

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