Abstract

We present a cost-effective 25-Gb/s electro-absorption modulator integrated laser (EML) transmitter optical sub-assembly (TOSA) using all-in-one flexible printed circuit board (FPCB) wiring and a metal optical bench (MOB). For a low cost and high bandwidth TOSA, internal and external wirings and feed-through of the TOSA to transmit radio-frequency (RF) signal are configured all-in-one using the FPCB. The FPCB is extended from an exterior of the TOSA package up to an EML chip inside the package through the slit formed on a rear sidewall of the package and die-bonded on the MOB. The EML TOSA shows a modulated output power of more than 3.5 dBm and a clear eye pattern with a dynamic extinction ratio of ~8.4 dB at a data rate of 25.78 Gb/s.

© 2013 Optical Society of America

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References

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  1. IEEE 802.3ba 40 Gb/s and 100 Gb/s Ethernet Task Force Public Area; http://www.ieee802.org/3/ba/index.html
  2. T. Uesugi, N. Okada, T. Saito, T. Yamatoya, Y. Morita, and A. Sugitatsu, “25 Gbps EML TOSA employing novel impedance-matched FPC design,” in Proc. ECOC, P2.10 (2009).
  3. T. Fujisawa, S. Kanazawa, N. Nunoya, H. Ishii, Y. Kawaguchi, A. Ohki, N. Fujiwara, K. Takahata, R. Iga, F. Kano, and H. Oohashi, “4×25-Gbit/s, 1.3-μm, monolithically integrated light source for 100-Gbit/s Ethernet,” in Proc. ECOC 2010, Th.9.D.1 (2010).
  4. T. Fujisawa, S. Kanazawa, K. Takahata, W. Kobayashi, T. Tadokoro, H. Ishii, and F. Kano, “1.3-μm, 4 × 25-Gbit/s, EADFB laser array module with large-output-power and low-driving-voltage for energy-efficient 100GbE transmitter,” Opt. Express20(1), 614–620 (2012).
    [CrossRef] [PubMed]
  5. C. Xu, Y. Z. Xu, Y. Zhao, K. Lu, W. Liu, and W. Liu, “Performance improvement of 40-Gb/s electroabsorption modulator integrated laser module with two open-circuit stubs,” IEEE Photon. Technol. Lett.24(20), 2046–2048 (2012).
  6. W. Kobayashi, T. Tadokoro, T. Fujisawa, N. Fujiwara, T. Yamanaka, and F. Kano, “40-Gbps direct modulation of 1.3-μm InGaAlAs DFB laser in compact TO-CAN package,” in Proc. OFC, OWD2, 1–3 (2011).
  7. T. Tadokoro, W. Kobayashi, T. Fujisawa, T. Yamanaka, and F. Kano, “High-speed modulation lasers for 100GbE applications,” in Proc. OFC, OWD1, 1–3 (2011).
    [CrossRef]
  8. T.-T. Shih, P.-H. Tseng, Y.-Y. Lai, and W.-H. Cheng, “A 25 Gbit/s transmitter optical sub-assembly package employing cost-effective TO-CAN materials and processes,” J. Lightwave Technol.30(6), 834–840 (2012).
    [CrossRef]
  9. T. Yagisawa, T. Shiraishi, N. Kuwata, and T. Ikeuchi, “30-Gb/s VCSEL transmitter fabricated on flexible printed circuit substrate,” in Proc. ECOC 2010, Th.10.D.6 (2010).
    [CrossRef]
  10. Y. Baek, Y.-T. Han, C.-W. Lee, D.-H. Lee, O.-K. Kwon, J.-W. Shin, S.-H. Park, and Y.-A. Leem, “Optical components for 100G Ethernet transceivers,” in Proc. OECC 2012, 4D1–2(2012).
    [CrossRef]
  11. Y.-H. Kwon, J.-S. Choe, J.-S. Sim, S.-B. Kim, H. Yun, K. S. Choi, B.-S. Choi, and E.-S. Nam, “40 Gb/s traveling-wave electroabsorption modulator-integrated DFB lasers fabricated using selective area growth,” ETRI Journal31(6), 765–769 (2009).
  12. H. Fukano, Y. Akage, Y. Kawaguchi, Y. Suzaki, K. Kishi, T. Yamanaka, Y. Kondo, and H. Yasaka, “Low chirp operation of 40 Gbit/s electroabsorption modulator integrated DFB laser module with low driving voltage,” IEEE J. Sel. Top. Quantum Electron.13(5), 1129–1134 (2007).
    [CrossRef]
  13. O.-K. Kwon, Y.-T. Han, Y. S. Baek, and Y.-C. Chung, “Improvement of modulation bandwidth in electroabsorption-modulated laser by utilizing the resonance property in bonding wire,” Opt. Express20(11), 11806–11812 (2012).
    [CrossRef] [PubMed]

2012 (4)

2009 (1)

Y.-H. Kwon, J.-S. Choe, J.-S. Sim, S.-B. Kim, H. Yun, K. S. Choi, B.-S. Choi, and E.-S. Nam, “40 Gb/s traveling-wave electroabsorption modulator-integrated DFB lasers fabricated using selective area growth,” ETRI Journal31(6), 765–769 (2009).

2007 (1)

H. Fukano, Y. Akage, Y. Kawaguchi, Y. Suzaki, K. Kishi, T. Yamanaka, Y. Kondo, and H. Yasaka, “Low chirp operation of 40 Gbit/s electroabsorption modulator integrated DFB laser module with low driving voltage,” IEEE J. Sel. Top. Quantum Electron.13(5), 1129–1134 (2007).
[CrossRef]

Akage, Y.

H. Fukano, Y. Akage, Y. Kawaguchi, Y. Suzaki, K. Kishi, T. Yamanaka, Y. Kondo, and H. Yasaka, “Low chirp operation of 40 Gbit/s electroabsorption modulator integrated DFB laser module with low driving voltage,” IEEE J. Sel. Top. Quantum Electron.13(5), 1129–1134 (2007).
[CrossRef]

Baek, Y. S.

Cheng, W.-H.

Choe, J.-S.

Y.-H. Kwon, J.-S. Choe, J.-S. Sim, S.-B. Kim, H. Yun, K. S. Choi, B.-S. Choi, and E.-S. Nam, “40 Gb/s traveling-wave electroabsorption modulator-integrated DFB lasers fabricated using selective area growth,” ETRI Journal31(6), 765–769 (2009).

Choi, B.-S.

Y.-H. Kwon, J.-S. Choe, J.-S. Sim, S.-B. Kim, H. Yun, K. S. Choi, B.-S. Choi, and E.-S. Nam, “40 Gb/s traveling-wave electroabsorption modulator-integrated DFB lasers fabricated using selective area growth,” ETRI Journal31(6), 765–769 (2009).

Choi, K. S.

Y.-H. Kwon, J.-S. Choe, J.-S. Sim, S.-B. Kim, H. Yun, K. S. Choi, B.-S. Choi, and E.-S. Nam, “40 Gb/s traveling-wave electroabsorption modulator-integrated DFB lasers fabricated using selective area growth,” ETRI Journal31(6), 765–769 (2009).

Chung, Y.-C.

Fujisawa, T.

Fukano, H.

H. Fukano, Y. Akage, Y. Kawaguchi, Y. Suzaki, K. Kishi, T. Yamanaka, Y. Kondo, and H. Yasaka, “Low chirp operation of 40 Gbit/s electroabsorption modulator integrated DFB laser module with low driving voltage,” IEEE J. Sel. Top. Quantum Electron.13(5), 1129–1134 (2007).
[CrossRef]

Han, Y.-T.

Ishii, H.

Kanazawa, S.

Kano, F.

Kawaguchi, Y.

H. Fukano, Y. Akage, Y. Kawaguchi, Y. Suzaki, K. Kishi, T. Yamanaka, Y. Kondo, and H. Yasaka, “Low chirp operation of 40 Gbit/s electroabsorption modulator integrated DFB laser module with low driving voltage,” IEEE J. Sel. Top. Quantum Electron.13(5), 1129–1134 (2007).
[CrossRef]

Kim, S.-B.

Y.-H. Kwon, J.-S. Choe, J.-S. Sim, S.-B. Kim, H. Yun, K. S. Choi, B.-S. Choi, and E.-S. Nam, “40 Gb/s traveling-wave electroabsorption modulator-integrated DFB lasers fabricated using selective area growth,” ETRI Journal31(6), 765–769 (2009).

Kishi, K.

H. Fukano, Y. Akage, Y. Kawaguchi, Y. Suzaki, K. Kishi, T. Yamanaka, Y. Kondo, and H. Yasaka, “Low chirp operation of 40 Gbit/s electroabsorption modulator integrated DFB laser module with low driving voltage,” IEEE J. Sel. Top. Quantum Electron.13(5), 1129–1134 (2007).
[CrossRef]

Kobayashi, W.

Kondo, Y.

H. Fukano, Y. Akage, Y. Kawaguchi, Y. Suzaki, K. Kishi, T. Yamanaka, Y. Kondo, and H. Yasaka, “Low chirp operation of 40 Gbit/s electroabsorption modulator integrated DFB laser module with low driving voltage,” IEEE J. Sel. Top. Quantum Electron.13(5), 1129–1134 (2007).
[CrossRef]

Kwon, O.-K.

Kwon, Y.-H.

Y.-H. Kwon, J.-S. Choe, J.-S. Sim, S.-B. Kim, H. Yun, K. S. Choi, B.-S. Choi, and E.-S. Nam, “40 Gb/s traveling-wave electroabsorption modulator-integrated DFB lasers fabricated using selective area growth,” ETRI Journal31(6), 765–769 (2009).

Lai, Y.-Y.

Liu, W.

C. Xu, Y. Z. Xu, Y. Zhao, K. Lu, W. Liu, and W. Liu, “Performance improvement of 40-Gb/s electroabsorption modulator integrated laser module with two open-circuit stubs,” IEEE Photon. Technol. Lett.24(20), 2046–2048 (2012).

C. Xu, Y. Z. Xu, Y. Zhao, K. Lu, W. Liu, and W. Liu, “Performance improvement of 40-Gb/s electroabsorption modulator integrated laser module with two open-circuit stubs,” IEEE Photon. Technol. Lett.24(20), 2046–2048 (2012).

Lu, K.

C. Xu, Y. Z. Xu, Y. Zhao, K. Lu, W. Liu, and W. Liu, “Performance improvement of 40-Gb/s electroabsorption modulator integrated laser module with two open-circuit stubs,” IEEE Photon. Technol. Lett.24(20), 2046–2048 (2012).

Morita, Y.

T. Uesugi, N. Okada, T. Saito, T. Yamatoya, Y. Morita, and A. Sugitatsu, “25 Gbps EML TOSA employing novel impedance-matched FPC design,” in Proc. ECOC, P2.10 (2009).

Nam, E.-S.

Y.-H. Kwon, J.-S. Choe, J.-S. Sim, S.-B. Kim, H. Yun, K. S. Choi, B.-S. Choi, and E.-S. Nam, “40 Gb/s traveling-wave electroabsorption modulator-integrated DFB lasers fabricated using selective area growth,” ETRI Journal31(6), 765–769 (2009).

Okada, N.

T. Uesugi, N. Okada, T. Saito, T. Yamatoya, Y. Morita, and A. Sugitatsu, “25 Gbps EML TOSA employing novel impedance-matched FPC design,” in Proc. ECOC, P2.10 (2009).

Saito, T.

T. Uesugi, N. Okada, T. Saito, T. Yamatoya, Y. Morita, and A. Sugitatsu, “25 Gbps EML TOSA employing novel impedance-matched FPC design,” in Proc. ECOC, P2.10 (2009).

Shih, T.-T.

Sim, J.-S.

Y.-H. Kwon, J.-S. Choe, J.-S. Sim, S.-B. Kim, H. Yun, K. S. Choi, B.-S. Choi, and E.-S. Nam, “40 Gb/s traveling-wave electroabsorption modulator-integrated DFB lasers fabricated using selective area growth,” ETRI Journal31(6), 765–769 (2009).

Sugitatsu, A.

T. Uesugi, N. Okada, T. Saito, T. Yamatoya, Y. Morita, and A. Sugitatsu, “25 Gbps EML TOSA employing novel impedance-matched FPC design,” in Proc. ECOC, P2.10 (2009).

Suzaki, Y.

H. Fukano, Y. Akage, Y. Kawaguchi, Y. Suzaki, K. Kishi, T. Yamanaka, Y. Kondo, and H. Yasaka, “Low chirp operation of 40 Gbit/s electroabsorption modulator integrated DFB laser module with low driving voltage,” IEEE J. Sel. Top. Quantum Electron.13(5), 1129–1134 (2007).
[CrossRef]

Tadokoro, T.

Takahata, K.

Tseng, P.-H.

Uesugi, T.

T. Uesugi, N. Okada, T. Saito, T. Yamatoya, Y. Morita, and A. Sugitatsu, “25 Gbps EML TOSA employing novel impedance-matched FPC design,” in Proc. ECOC, P2.10 (2009).

Xu, C.

C. Xu, Y. Z. Xu, Y. Zhao, K. Lu, W. Liu, and W. Liu, “Performance improvement of 40-Gb/s electroabsorption modulator integrated laser module with two open-circuit stubs,” IEEE Photon. Technol. Lett.24(20), 2046–2048 (2012).

Xu, Y. Z.

C. Xu, Y. Z. Xu, Y. Zhao, K. Lu, W. Liu, and W. Liu, “Performance improvement of 40-Gb/s electroabsorption modulator integrated laser module with two open-circuit stubs,” IEEE Photon. Technol. Lett.24(20), 2046–2048 (2012).

Yamanaka, T.

H. Fukano, Y. Akage, Y. Kawaguchi, Y. Suzaki, K. Kishi, T. Yamanaka, Y. Kondo, and H. Yasaka, “Low chirp operation of 40 Gbit/s electroabsorption modulator integrated DFB laser module with low driving voltage,” IEEE J. Sel. Top. Quantum Electron.13(5), 1129–1134 (2007).
[CrossRef]

Yamatoya, T.

T. Uesugi, N. Okada, T. Saito, T. Yamatoya, Y. Morita, and A. Sugitatsu, “25 Gbps EML TOSA employing novel impedance-matched FPC design,” in Proc. ECOC, P2.10 (2009).

Yasaka, H.

H. Fukano, Y. Akage, Y. Kawaguchi, Y. Suzaki, K. Kishi, T. Yamanaka, Y. Kondo, and H. Yasaka, “Low chirp operation of 40 Gbit/s electroabsorption modulator integrated DFB laser module with low driving voltage,” IEEE J. Sel. Top. Quantum Electron.13(5), 1129–1134 (2007).
[CrossRef]

Yun, H.

Y.-H. Kwon, J.-S. Choe, J.-S. Sim, S.-B. Kim, H. Yun, K. S. Choi, B.-S. Choi, and E.-S. Nam, “40 Gb/s traveling-wave electroabsorption modulator-integrated DFB lasers fabricated using selective area growth,” ETRI Journal31(6), 765–769 (2009).

Zhao, Y.

C. Xu, Y. Z. Xu, Y. Zhao, K. Lu, W. Liu, and W. Liu, “Performance improvement of 40-Gb/s electroabsorption modulator integrated laser module with two open-circuit stubs,” IEEE Photon. Technol. Lett.24(20), 2046–2048 (2012).

ETRI Journal (1)

Y.-H. Kwon, J.-S. Choe, J.-S. Sim, S.-B. Kim, H. Yun, K. S. Choi, B.-S. Choi, and E.-S. Nam, “40 Gb/s traveling-wave electroabsorption modulator-integrated DFB lasers fabricated using selective area growth,” ETRI Journal31(6), 765–769 (2009).

IEEE J. Sel. Top. Quantum Electron. (1)

H. Fukano, Y. Akage, Y. Kawaguchi, Y. Suzaki, K. Kishi, T. Yamanaka, Y. Kondo, and H. Yasaka, “Low chirp operation of 40 Gbit/s electroabsorption modulator integrated DFB laser module with low driving voltage,” IEEE J. Sel. Top. Quantum Electron.13(5), 1129–1134 (2007).
[CrossRef]

IEEE Photon. Technol. Lett. (1)

C. Xu, Y. Z. Xu, Y. Zhao, K. Lu, W. Liu, and W. Liu, “Performance improvement of 40-Gb/s electroabsorption modulator integrated laser module with two open-circuit stubs,” IEEE Photon. Technol. Lett.24(20), 2046–2048 (2012).

J. Lightwave Technol. (1)

Opt. Express (2)

Other (7)

IEEE 802.3ba 40 Gb/s and 100 Gb/s Ethernet Task Force Public Area; http://www.ieee802.org/3/ba/index.html

T. Uesugi, N. Okada, T. Saito, T. Yamatoya, Y. Morita, and A. Sugitatsu, “25 Gbps EML TOSA employing novel impedance-matched FPC design,” in Proc. ECOC, P2.10 (2009).

T. Fujisawa, S. Kanazawa, N. Nunoya, H. Ishii, Y. Kawaguchi, A. Ohki, N. Fujiwara, K. Takahata, R. Iga, F. Kano, and H. Oohashi, “4×25-Gbit/s, 1.3-μm, monolithically integrated light source for 100-Gbit/s Ethernet,” in Proc. ECOC 2010, Th.9.D.1 (2010).

W. Kobayashi, T. Tadokoro, T. Fujisawa, N. Fujiwara, T. Yamanaka, and F. Kano, “40-Gbps direct modulation of 1.3-μm InGaAlAs DFB laser in compact TO-CAN package,” in Proc. OFC, OWD2, 1–3 (2011).

T. Tadokoro, W. Kobayashi, T. Fujisawa, T. Yamanaka, and F. Kano, “High-speed modulation lasers for 100GbE applications,” in Proc. OFC, OWD1, 1–3 (2011).
[CrossRef]

T. Yagisawa, T. Shiraishi, N. Kuwata, and T. Ikeuchi, “30-Gb/s VCSEL transmitter fabricated on flexible printed circuit substrate,” in Proc. ECOC 2010, Th.10.D.6 (2010).
[CrossRef]

Y. Baek, Y.-T. Han, C.-W. Lee, D.-H. Lee, O.-K. Kwon, J.-W. Shin, S.-H. Park, and Y.-A. Leem, “Optical components for 100G Ethernet transceivers,” in Proc. OECC 2012, 4D1–2(2012).
[CrossRef]

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Figures (8)

Fig. 1
Fig. 1

Schematic diagram of the proposed EML TOSA module: (a) cross-sectional view of the TOSA and (b) top-view of the dotted region in Fig. 1(a).

Fig. 2
Fig. 2

Photograph of a fabricated EML chip with a structure of the traveling-wave electrode.

Fig. 3
Fig. 3

Measured optical characteristics of a fabricated EML chip: (a) LI-curves as a function of injection current and (b) static extinction ratio at temperatures of 25°C and 40°C. A lasing wavelength of the EML chip was about 1294.8 nm at a current of 100 mA for the DFB-LD and a temperature of 25°C.

Fig. 4
Fig. 4

(a) Enlarged internal view and (b) full photograph of a fabricated EML TOSA module.

Fig. 5
Fig. 5

Wavelength spectrum curves of the packaged EML TOSA at temperatures of 25°C and 40°C for a current (Ib) of 100 mA.

Fig. 6
Fig. 6

Measured high-speed characteristics of the packaged EML TOSA module: (a) RF return/reflection losses (S11) and (b) E/O responses of the EML TOSA. The DFB-LD operated at 100 mA.

Fig. 7
Fig. 7

Measured eye patterns of (a) electrical input signal of 500 mW and (b) opto-electrical output signal of 25.78-Gb/s non-return to zero (NRZ), 231-1 pseudo-random bit sequence (PRBS).

Fig. 8
Fig. 8

Measured bit error rate curves of the EML TOSA for back-to-back and after 15-km transmission through a standard single mode fiber.

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