Abstract

Monolithic passively mode-locked quantum dot lasers with excited-state transition were investigated in a broad operating range without ground-state lasing. Optical and electrical characteristics of these mode locked lasers were studied in detail at different levels of injection current and absorber bias. Very different behaviors in the evolution of the hysteresis, the optical spectra and the evolution of repetition frequency were observed between our lasers and conventional quantum dot lasers with ground-state transition. Possible mechanisms behind these observed phenomena were proposed and discussed. A minimum pulse width of 3.3 ps and an externally compressed pulse width of 0.78 ps were obtained.

© 2013 Optical Society of America

Full Article  |  PDF Article

References

  • View by:
  • |
  • |
  • |

  1. A. Markus, J. X. Chen, O. Gauthier-Lafaye, J. G. Provost, C. Paranthoën, and A. Fiore, “Impact of intraband relaxation on the performance of a quantum-dot laser,” IEEE J. Sel. Top. Quantum Electron.9(5), 1308–1314 (2003).
    [CrossRef]
  2. A. Markus, M. Rossetti, V. Calligari, D. Chek-Al-Kar, J. X. Chen, A. Fiore, and R. Scollo, “Two-state switching and dynamics in quantum dot two-section lasers,” J. Appl. Phys.100(11), 113104 (2006).
    [CrossRef]
  3. H. Y. Wang, H. C. Cheng, S. D. Lin, and C. P. Lee, “Wavelength switching transition in quantum dot lasers,” Appl. Phys. Lett.90(8), 081112 (2007).
    [CrossRef]
  4. S. Schneider, P. Borri, W. Langbein, U. Woggon, R. L. Sellin, D. Ouyang, and D. Bimberg, “Excited-state gain dynamics in InGaAs quantum-dot amplifiers,” IEEE Photon. Technol. Lett.17(10), 2014–2016 (2005).
    [CrossRef]
  5. D. B. Malins, A. Gomez-Iglesias, S. J. White, W. Sibbett, A. Miller, and E. U. Rafailov, “Ultrafast electroabsorption dynamics in an InAs quantum dot saturable absorber at 1.3 μm,” Appl. Phys. Lett.89(17), 171111 (2006).
    [CrossRef]
  6. T. Piwonski, J. Pulka, G. Madden, G. Huyet, J. Houlihan, E. A. Viktorov, T. Erneux, and P. Mandel, “Intradot dynamics of InAs quantum dot based electroabsorbers,” Appl. Phys. Lett.94(12), 123504 (2009).
    [CrossRef]
  7. E. U. Rafailov, M. A. Cataluna, and W. Sibbett, “Mode-locked quantum-dot lasers,” Nat. Photonics1(7), 395–401 (2007).
    [CrossRef]
  8. L. W. Shi, Y. H. Chen, B. Xu, Z. C. Wang, Y. H. Jiao, and Z. G. Wang, “Status and trends of short pulse generation using mode-locked lasers based on advanced quantum-dot active media,” J. Phys. D Appl. Phys.40(18), R307–R318 (2007).
    [CrossRef]
  9. M. G. Thompson, A. R. Rae, M. Xia, R. V. Penty, and I. H. White, “InGaAs quantum-dot mode-locked laser diodes,” IEEE J. Sel. Top. Quantum Electron.15(3), 661–672 (2009).
    [CrossRef]
  10. M. A. Cataluna, Y. Ding, D. I. Nikitichev, K. A. Fedorova, and E. U. Rafailov, “High-power versatile picosecond pulse generation from mode-Locked quantum-dot laser diodes,” IEEE J. Sel. of Quantum Electron.17(5), 1302–1310 (2011).
    [CrossRef]
  11. S. Schneider, U. K. Woggon, P. Borri, W. Langbein, D. Ouyang, R. Sellin, and D. Bimberg, “Ultrafast gain recovery dynamics of the excited state in InGaAs quantum dot amplifiers,” in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science and Photonic Applications Systems Technologies, Technical Digest Series (CD) (Optical Society of America, 2005), paper CThH6.
  12. H. C. Schneider, W. W. Chow, and S. W. Koch, “Anomalous carrier-induced dispersion in quantum-dot,” Phys. Rev. B66(4), 041310 (2002).
    [CrossRef]
  13. A. I. O‘Driscoll, T. Piwonski, J. Houlihan, G. Huyet, R. J. Manning, and B. Corbett, “Phase dynamics of InAs/GaAs quantum dot semiconductor optical amplifiers,” Appl. Phys. Lett.91(26), 263506 (2007).
    [CrossRef]
  14. P. F. Xu, H. M. Ji, J. L. Xiao, Y. X. Gu, Y. Z. Huang, and T. Yang, “Reduced linewidth enhancement factor due to excited state transition of quantum dot lasers,” Opt. Lett.37(8), 1298–1300 (2012).
    [CrossRef] [PubMed]
  15. M. Kuntz, G. Fiol, M. Laemmlin, C. Meuer, and D. Bimberg, “High-speed mode-locked quantum-dot lasers and optical amplifiers,” Proc. IEEE95(9), 1767–1778 (2007).
    [CrossRef]
  16. M. A. Cataluna, A. R. Kovsh, and E. U. Rafailov, “Stable mode locking via ground- or excited-state transitions in a two-section quantum-dot laser,” Appl. Phys. Lett.89(8), 081124 (2006).
    [CrossRef]
  17. M. A. Cataluna, D. I. Nikitichev, S. Mikroulis, H. Simos, C. Simos, C. Mesaritakis, D. Syvridis, I. Krestnikov, D. Livshits, and E. U. Rafailov, “Dual-wavelength mode-locked quantum-dot laser, via ground and excited state transitions: experimental and theoretical investigation,” Opt. Express18(12), 12832–12838 (2010).
    [CrossRef] [PubMed]
  18. S. Breuer, M. Rossetti, W. Elsässer, L. Drzewietzki, P. Bardella, I. Montrosset, M. Krakowski, and M. Hopkinson, “Reverse-emission-state-transition mode locking of a two-section InAs/InGaAs quantum dot laser,” Appl. Phys. Lett.97(7), 071118 (2010).
    [CrossRef]
  19. T. H. Xu, M. Rossetti, P. Bardella, and I. Montrosset, “Simulation and analysis of dynamic regimes involving ground and excited state transitions in quantum dot passively mode-locked lasers,” IEEE J. Quantum Electron.48(9), 1193–1202 (2012).
    [CrossRef]
  20. S. Breuer, M. Rossetti, L. Drzewietzki, P. Bardella, I. Montrosset, and W. Elsäßer, “Joint experimental and theoretical investigations of two-state mode locking in a strongly chirped reverse-biased monolithic quantum dot laser,” IEEE J. Quantum Electron.47(10), 1320–1329 (2011).
    [CrossRef]
  21. J. Y. Kim, M. T. Choi, W. K. Lee, and P. J. Delfyett., “Wavelength tunable mode-locked quantum-dot laser,” Proc. SPIE6243, 1–8 (2006).
    [CrossRef]
  22. J. Y. Kim, M. T. Choi, and P. J. Delfyett, “Pulse generation and compression via ground and excited states from a grating coupled passively mode-locked quantum dot two-section diode laser,” Appl. Phys. Lett.89(26), 261106 (2006).
    [CrossRef]
  23. A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, A. Y. Egorov, N. N. Ledentsov, A. F. Tsatsul’nikov, M. V. Maximov, Y. M. Shernyakov, V. I. Kopchatov, A. V. Lunev, P. S. Kop’ev, D. Bimberg, and Z. I. Alferov, “Gain characteristics of quantum dot injection lasers,” Semicond. Sci. Technol.14(1), 118–123 (1999).
    [CrossRef]
  24. X. D. Huang, A. Stintz, H. Li, A. Rice, G. T. Liu, L. F. Lester, J. Cheng, and K. J. Malloy, “Bistable operation of a two-section 1.3-μm InAs quantum dot laser—absorption saturation and the quantum confined stark effect,” IEEE J. Quantum Electron.37(3), 414–417 (2001).
    [CrossRef]
  25. X. D. Huang, A. Stintz, H. Li, L. F. Lester, J. Cheng, and K. J. Malloy, “Passive mode-locking in 1.3 um two-section InAs quantum dot lasers,” Appl. Phys. Lett.78(19), 2825–2827 (2001).
    [CrossRef]
  26. M. G. Thompson, A. Rae, R. L. Sellin, C. Marinelli, R. V. Penty, I. H. White, A. R. Kovsh, S. S. Mikhrin, D. A. Livshits, and I. L. Krestnikov, “Subpicosecond high-power mode locking using flared waveguide monolithic quantum-dot lasers,” Appl. Phys. Lett.88(13), 133119 (2006).
    [CrossRef]
  27. M. A. Cataluna, E. U. Rafailov, A. D. McRobbie, W. Sibbett, D. A. Livshits, and A. R. Kovsh, “Stable Mode-Locked Operation up to 80 °C From an InGaAs Quantum-Dot Laser,” IEEE Photon. Technol. Lett.18(14), 1500–1502 (2006).
    [CrossRef]
  28. L. W. Jiang, X. L. Ye, X. L. Zhou, P. Jin, X. Q. Lü, and Z. G. Wang, “Optical bistability in a two-section InAs quantum-dot laser,” J. Semicond.31(11), 114012 (2010).
    [CrossRef]
  29. H. Kawaguchi, “Absorptive and dispersive bistability in semiconductor injection lasers,” Opt. Quantum Electron.19(S1), S1–S36 (1987).
    [CrossRef]
  30. M. Ueno and R. Lang, “Conditions for self-sustained pulsation and bistability in semiconductor lasers,” J. Appl. Phys.58(4), 1689–1692 (1985).
    [CrossRef]
  31. S. Arahira and Y. Ogawa, “Repetition – frequency tuning of monolithic passively mode-locked semiconductor lasers with integrated extended cavities,” IEEE J. Quantum Electron.33(2), 255–264 (1997).
    [CrossRef]
  32. F. Kéfélian, S. O’Donoghue, M. T. Todaro, J. McInerney, and G. Huyet, “Experimental investigation of different regimes of mode-locking in a high repetition rate passively mode-locked semiconductor quantum-dot laser,” Opt. Express17(8), 6258–6267 (2009).
    [CrossRef] [PubMed]
  33. G. Carpintero, M. G. Thompson, K. Yvind, R. V. Penty, and I. H. White, “Comparison of the noise performance of 10 GHz repetition rate quantum-dot and quantum well monolithic mode-locked semiconductor lasers,” IET Optoelectron.5(5), 195–201 (2011).
    [CrossRef]
  34. T. Piwonski, J. Pulka, E. A. Viktorov, G. Huyet, and J. Houlihan, “Refractive index dynamics of quantum dot based waveguide electroabsorbers,” Appl. Phys. Lett.97(5), 051107 (2010).
    [CrossRef]
  35. K. A. Williams, M. G. Thompson, and I. H. White, “Long-wavelength monolithic mode-locked diode lasers,” New J. Phys.6, 179 (2004).
    [CrossRef]
  36. E. B. Treacy, “Optical pulse compression with diffraction gratings,” IEEE J. Quantum Electron.5(9), 454–458 (1969).
    [CrossRef]

2012 (2)

T. H. Xu, M. Rossetti, P. Bardella, and I. Montrosset, “Simulation and analysis of dynamic regimes involving ground and excited state transitions in quantum dot passively mode-locked lasers,” IEEE J. Quantum Electron.48(9), 1193–1202 (2012).
[CrossRef]

P. F. Xu, H. M. Ji, J. L. Xiao, Y. X. Gu, Y. Z. Huang, and T. Yang, “Reduced linewidth enhancement factor due to excited state transition of quantum dot lasers,” Opt. Lett.37(8), 1298–1300 (2012).
[CrossRef] [PubMed]

2011 (3)

G. Carpintero, M. G. Thompson, K. Yvind, R. V. Penty, and I. H. White, “Comparison of the noise performance of 10 GHz repetition rate quantum-dot and quantum well monolithic mode-locked semiconductor lasers,” IET Optoelectron.5(5), 195–201 (2011).
[CrossRef]

S. Breuer, M. Rossetti, L. Drzewietzki, P. Bardella, I. Montrosset, and W. Elsäßer, “Joint experimental and theoretical investigations of two-state mode locking in a strongly chirped reverse-biased monolithic quantum dot laser,” IEEE J. Quantum Electron.47(10), 1320–1329 (2011).
[CrossRef]

M. A. Cataluna, Y. Ding, D. I. Nikitichev, K. A. Fedorova, and E. U. Rafailov, “High-power versatile picosecond pulse generation from mode-Locked quantum-dot laser diodes,” IEEE J. Sel. of Quantum Electron.17(5), 1302–1310 (2011).
[CrossRef]

2010 (4)

S. Breuer, M. Rossetti, W. Elsässer, L. Drzewietzki, P. Bardella, I. Montrosset, M. Krakowski, and M. Hopkinson, “Reverse-emission-state-transition mode locking of a two-section InAs/InGaAs quantum dot laser,” Appl. Phys. Lett.97(7), 071118 (2010).
[CrossRef]

T. Piwonski, J. Pulka, E. A. Viktorov, G. Huyet, and J. Houlihan, “Refractive index dynamics of quantum dot based waveguide electroabsorbers,” Appl. Phys. Lett.97(5), 051107 (2010).
[CrossRef]

M. A. Cataluna, D. I. Nikitichev, S. Mikroulis, H. Simos, C. Simos, C. Mesaritakis, D. Syvridis, I. Krestnikov, D. Livshits, and E. U. Rafailov, “Dual-wavelength mode-locked quantum-dot laser, via ground and excited state transitions: experimental and theoretical investigation,” Opt. Express18(12), 12832–12838 (2010).
[CrossRef] [PubMed]

L. W. Jiang, X. L. Ye, X. L. Zhou, P. Jin, X. Q. Lü, and Z. G. Wang, “Optical bistability in a two-section InAs quantum-dot laser,” J. Semicond.31(11), 114012 (2010).
[CrossRef]

2009 (3)

F. Kéfélian, S. O’Donoghue, M. T. Todaro, J. McInerney, and G. Huyet, “Experimental investigation of different regimes of mode-locking in a high repetition rate passively mode-locked semiconductor quantum-dot laser,” Opt. Express17(8), 6258–6267 (2009).
[CrossRef] [PubMed]

T. Piwonski, J. Pulka, G. Madden, G. Huyet, J. Houlihan, E. A. Viktorov, T. Erneux, and P. Mandel, “Intradot dynamics of InAs quantum dot based electroabsorbers,” Appl. Phys. Lett.94(12), 123504 (2009).
[CrossRef]

M. G. Thompson, A. R. Rae, M. Xia, R. V. Penty, and I. H. White, “InGaAs quantum-dot mode-locked laser diodes,” IEEE J. Sel. Top. Quantum Electron.15(3), 661–672 (2009).
[CrossRef]

2007 (5)

E. U. Rafailov, M. A. Cataluna, and W. Sibbett, “Mode-locked quantum-dot lasers,” Nat. Photonics1(7), 395–401 (2007).
[CrossRef]

L. W. Shi, Y. H. Chen, B. Xu, Z. C. Wang, Y. H. Jiao, and Z. G. Wang, “Status and trends of short pulse generation using mode-locked lasers based on advanced quantum-dot active media,” J. Phys. D Appl. Phys.40(18), R307–R318 (2007).
[CrossRef]

H. Y. Wang, H. C. Cheng, S. D. Lin, and C. P. Lee, “Wavelength switching transition in quantum dot lasers,” Appl. Phys. Lett.90(8), 081112 (2007).
[CrossRef]

A. I. O‘Driscoll, T. Piwonski, J. Houlihan, G. Huyet, R. J. Manning, and B. Corbett, “Phase dynamics of InAs/GaAs quantum dot semiconductor optical amplifiers,” Appl. Phys. Lett.91(26), 263506 (2007).
[CrossRef]

M. Kuntz, G. Fiol, M. Laemmlin, C. Meuer, and D. Bimberg, “High-speed mode-locked quantum-dot lasers and optical amplifiers,” Proc. IEEE95(9), 1767–1778 (2007).
[CrossRef]

2006 (7)

M. A. Cataluna, A. R. Kovsh, and E. U. Rafailov, “Stable mode locking via ground- or excited-state transitions in a two-section quantum-dot laser,” Appl. Phys. Lett.89(8), 081124 (2006).
[CrossRef]

M. G. Thompson, A. Rae, R. L. Sellin, C. Marinelli, R. V. Penty, I. H. White, A. R. Kovsh, S. S. Mikhrin, D. A. Livshits, and I. L. Krestnikov, “Subpicosecond high-power mode locking using flared waveguide monolithic quantum-dot lasers,” Appl. Phys. Lett.88(13), 133119 (2006).
[CrossRef]

M. A. Cataluna, E. U. Rafailov, A. D. McRobbie, W. Sibbett, D. A. Livshits, and A. R. Kovsh, “Stable Mode-Locked Operation up to 80 °C From an InGaAs Quantum-Dot Laser,” IEEE Photon. Technol. Lett.18(14), 1500–1502 (2006).
[CrossRef]

J. Y. Kim, M. T. Choi, W. K. Lee, and P. J. Delfyett., “Wavelength tunable mode-locked quantum-dot laser,” Proc. SPIE6243, 1–8 (2006).
[CrossRef]

J. Y. Kim, M. T. Choi, and P. J. Delfyett, “Pulse generation and compression via ground and excited states from a grating coupled passively mode-locked quantum dot two-section diode laser,” Appl. Phys. Lett.89(26), 261106 (2006).
[CrossRef]

A. Markus, M. Rossetti, V. Calligari, D. Chek-Al-Kar, J. X. Chen, A. Fiore, and R. Scollo, “Two-state switching and dynamics in quantum dot two-section lasers,” J. Appl. Phys.100(11), 113104 (2006).
[CrossRef]

D. B. Malins, A. Gomez-Iglesias, S. J. White, W. Sibbett, A. Miller, and E. U. Rafailov, “Ultrafast electroabsorption dynamics in an InAs quantum dot saturable absorber at 1.3 μm,” Appl. Phys. Lett.89(17), 171111 (2006).
[CrossRef]

2005 (1)

S. Schneider, P. Borri, W. Langbein, U. Woggon, R. L. Sellin, D. Ouyang, and D. Bimberg, “Excited-state gain dynamics in InGaAs quantum-dot amplifiers,” IEEE Photon. Technol. Lett.17(10), 2014–2016 (2005).
[CrossRef]

2004 (1)

K. A. Williams, M. G. Thompson, and I. H. White, “Long-wavelength monolithic mode-locked diode lasers,” New J. Phys.6, 179 (2004).
[CrossRef]

2003 (1)

A. Markus, J. X. Chen, O. Gauthier-Lafaye, J. G. Provost, C. Paranthoën, and A. Fiore, “Impact of intraband relaxation on the performance of a quantum-dot laser,” IEEE J. Sel. Top. Quantum Electron.9(5), 1308–1314 (2003).
[CrossRef]

2002 (1)

H. C. Schneider, W. W. Chow, and S. W. Koch, “Anomalous carrier-induced dispersion in quantum-dot,” Phys. Rev. B66(4), 041310 (2002).
[CrossRef]

2001 (2)

X. D. Huang, A. Stintz, H. Li, A. Rice, G. T. Liu, L. F. Lester, J. Cheng, and K. J. Malloy, “Bistable operation of a two-section 1.3-μm InAs quantum dot laser—absorption saturation and the quantum confined stark effect,” IEEE J. Quantum Electron.37(3), 414–417 (2001).
[CrossRef]

X. D. Huang, A. Stintz, H. Li, L. F. Lester, J. Cheng, and K. J. Malloy, “Passive mode-locking in 1.3 um two-section InAs quantum dot lasers,” Appl. Phys. Lett.78(19), 2825–2827 (2001).
[CrossRef]

1999 (1)

A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, A. Y. Egorov, N. N. Ledentsov, A. F. Tsatsul’nikov, M. V. Maximov, Y. M. Shernyakov, V. I. Kopchatov, A. V. Lunev, P. S. Kop’ev, D. Bimberg, and Z. I. Alferov, “Gain characteristics of quantum dot injection lasers,” Semicond. Sci. Technol.14(1), 118–123 (1999).
[CrossRef]

1997 (1)

S. Arahira and Y. Ogawa, “Repetition – frequency tuning of monolithic passively mode-locked semiconductor lasers with integrated extended cavities,” IEEE J. Quantum Electron.33(2), 255–264 (1997).
[CrossRef]

1987 (1)

H. Kawaguchi, “Absorptive and dispersive bistability in semiconductor injection lasers,” Opt. Quantum Electron.19(S1), S1–S36 (1987).
[CrossRef]

1985 (1)

M. Ueno and R. Lang, “Conditions for self-sustained pulsation and bistability in semiconductor lasers,” J. Appl. Phys.58(4), 1689–1692 (1985).
[CrossRef]

1969 (1)

E. B. Treacy, “Optical pulse compression with diffraction gratings,” IEEE J. Quantum Electron.5(9), 454–458 (1969).
[CrossRef]

Alferov, Z. I.

A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, A. Y. Egorov, N. N. Ledentsov, A. F. Tsatsul’nikov, M. V. Maximov, Y. M. Shernyakov, V. I. Kopchatov, A. V. Lunev, P. S. Kop’ev, D. Bimberg, and Z. I. Alferov, “Gain characteristics of quantum dot injection lasers,” Semicond. Sci. Technol.14(1), 118–123 (1999).
[CrossRef]

Arahira, S.

S. Arahira and Y. Ogawa, “Repetition – frequency tuning of monolithic passively mode-locked semiconductor lasers with integrated extended cavities,” IEEE J. Quantum Electron.33(2), 255–264 (1997).
[CrossRef]

Bardella, P.

T. H. Xu, M. Rossetti, P. Bardella, and I. Montrosset, “Simulation and analysis of dynamic regimes involving ground and excited state transitions in quantum dot passively mode-locked lasers,” IEEE J. Quantum Electron.48(9), 1193–1202 (2012).
[CrossRef]

S. Breuer, M. Rossetti, L. Drzewietzki, P. Bardella, I. Montrosset, and W. Elsäßer, “Joint experimental and theoretical investigations of two-state mode locking in a strongly chirped reverse-biased monolithic quantum dot laser,” IEEE J. Quantum Electron.47(10), 1320–1329 (2011).
[CrossRef]

S. Breuer, M. Rossetti, W. Elsässer, L. Drzewietzki, P. Bardella, I. Montrosset, M. Krakowski, and M. Hopkinson, “Reverse-emission-state-transition mode locking of a two-section InAs/InGaAs quantum dot laser,” Appl. Phys. Lett.97(7), 071118 (2010).
[CrossRef]

Bimberg, D.

M. Kuntz, G. Fiol, M. Laemmlin, C. Meuer, and D. Bimberg, “High-speed mode-locked quantum-dot lasers and optical amplifiers,” Proc. IEEE95(9), 1767–1778 (2007).
[CrossRef]

S. Schneider, P. Borri, W. Langbein, U. Woggon, R. L. Sellin, D. Ouyang, and D. Bimberg, “Excited-state gain dynamics in InGaAs quantum-dot amplifiers,” IEEE Photon. Technol. Lett.17(10), 2014–2016 (2005).
[CrossRef]

A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, A. Y. Egorov, N. N. Ledentsov, A. F. Tsatsul’nikov, M. V. Maximov, Y. M. Shernyakov, V. I. Kopchatov, A. V. Lunev, P. S. Kop’ev, D. Bimberg, and Z. I. Alferov, “Gain characteristics of quantum dot injection lasers,” Semicond. Sci. Technol.14(1), 118–123 (1999).
[CrossRef]

Borri, P.

S. Schneider, P. Borri, W. Langbein, U. Woggon, R. L. Sellin, D. Ouyang, and D. Bimberg, “Excited-state gain dynamics in InGaAs quantum-dot amplifiers,” IEEE Photon. Technol. Lett.17(10), 2014–2016 (2005).
[CrossRef]

Breuer, S.

S. Breuer, M. Rossetti, L. Drzewietzki, P. Bardella, I. Montrosset, and W. Elsäßer, “Joint experimental and theoretical investigations of two-state mode locking in a strongly chirped reverse-biased monolithic quantum dot laser,” IEEE J. Quantum Electron.47(10), 1320–1329 (2011).
[CrossRef]

S. Breuer, M. Rossetti, W. Elsässer, L. Drzewietzki, P. Bardella, I. Montrosset, M. Krakowski, and M. Hopkinson, “Reverse-emission-state-transition mode locking of a two-section InAs/InGaAs quantum dot laser,” Appl. Phys. Lett.97(7), 071118 (2010).
[CrossRef]

Calligari, V.

A. Markus, M. Rossetti, V. Calligari, D. Chek-Al-Kar, J. X. Chen, A. Fiore, and R. Scollo, “Two-state switching and dynamics in quantum dot two-section lasers,” J. Appl. Phys.100(11), 113104 (2006).
[CrossRef]

Carpintero, G.

G. Carpintero, M. G. Thompson, K. Yvind, R. V. Penty, and I. H. White, “Comparison of the noise performance of 10 GHz repetition rate quantum-dot and quantum well monolithic mode-locked semiconductor lasers,” IET Optoelectron.5(5), 195–201 (2011).
[CrossRef]

Cataluna, M. A.

M. A. Cataluna, Y. Ding, D. I. Nikitichev, K. A. Fedorova, and E. U. Rafailov, “High-power versatile picosecond pulse generation from mode-Locked quantum-dot laser diodes,” IEEE J. Sel. of Quantum Electron.17(5), 1302–1310 (2011).
[CrossRef]

M. A. Cataluna, D. I. Nikitichev, S. Mikroulis, H. Simos, C. Simos, C. Mesaritakis, D. Syvridis, I. Krestnikov, D. Livshits, and E. U. Rafailov, “Dual-wavelength mode-locked quantum-dot laser, via ground and excited state transitions: experimental and theoretical investigation,” Opt. Express18(12), 12832–12838 (2010).
[CrossRef] [PubMed]

E. U. Rafailov, M. A. Cataluna, and W. Sibbett, “Mode-locked quantum-dot lasers,” Nat. Photonics1(7), 395–401 (2007).
[CrossRef]

M. A. Cataluna, E. U. Rafailov, A. D. McRobbie, W. Sibbett, D. A. Livshits, and A. R. Kovsh, “Stable Mode-Locked Operation up to 80 °C From an InGaAs Quantum-Dot Laser,” IEEE Photon. Technol. Lett.18(14), 1500–1502 (2006).
[CrossRef]

M. A. Cataluna, A. R. Kovsh, and E. U. Rafailov, “Stable mode locking via ground- or excited-state transitions in a two-section quantum-dot laser,” Appl. Phys. Lett.89(8), 081124 (2006).
[CrossRef]

Chek-Al-Kar, D.

A. Markus, M. Rossetti, V. Calligari, D. Chek-Al-Kar, J. X. Chen, A. Fiore, and R. Scollo, “Two-state switching and dynamics in quantum dot two-section lasers,” J. Appl. Phys.100(11), 113104 (2006).
[CrossRef]

Chen, J. X.

A. Markus, M. Rossetti, V. Calligari, D. Chek-Al-Kar, J. X. Chen, A. Fiore, and R. Scollo, “Two-state switching and dynamics in quantum dot two-section lasers,” J. Appl. Phys.100(11), 113104 (2006).
[CrossRef]

A. Markus, J. X. Chen, O. Gauthier-Lafaye, J. G. Provost, C. Paranthoën, and A. Fiore, “Impact of intraband relaxation on the performance of a quantum-dot laser,” IEEE J. Sel. Top. Quantum Electron.9(5), 1308–1314 (2003).
[CrossRef]

Chen, Y. H.

L. W. Shi, Y. H. Chen, B. Xu, Z. C. Wang, Y. H. Jiao, and Z. G. Wang, “Status and trends of short pulse generation using mode-locked lasers based on advanced quantum-dot active media,” J. Phys. D Appl. Phys.40(18), R307–R318 (2007).
[CrossRef]

Cheng, H. C.

H. Y. Wang, H. C. Cheng, S. D. Lin, and C. P. Lee, “Wavelength switching transition in quantum dot lasers,” Appl. Phys. Lett.90(8), 081112 (2007).
[CrossRef]

Cheng, J.

X. D. Huang, A. Stintz, H. Li, A. Rice, G. T. Liu, L. F. Lester, J. Cheng, and K. J. Malloy, “Bistable operation of a two-section 1.3-μm InAs quantum dot laser—absorption saturation and the quantum confined stark effect,” IEEE J. Quantum Electron.37(3), 414–417 (2001).
[CrossRef]

X. D. Huang, A. Stintz, H. Li, L. F. Lester, J. Cheng, and K. J. Malloy, “Passive mode-locking in 1.3 um two-section InAs quantum dot lasers,” Appl. Phys. Lett.78(19), 2825–2827 (2001).
[CrossRef]

Choi, M. T.

J. Y. Kim, M. T. Choi, W. K. Lee, and P. J. Delfyett., “Wavelength tunable mode-locked quantum-dot laser,” Proc. SPIE6243, 1–8 (2006).
[CrossRef]

J. Y. Kim, M. T. Choi, and P. J. Delfyett, “Pulse generation and compression via ground and excited states from a grating coupled passively mode-locked quantum dot two-section diode laser,” Appl. Phys. Lett.89(26), 261106 (2006).
[CrossRef]

Chow, W. W.

H. C. Schneider, W. W. Chow, and S. W. Koch, “Anomalous carrier-induced dispersion in quantum-dot,” Phys. Rev. B66(4), 041310 (2002).
[CrossRef]

Corbett, B.

A. I. O‘Driscoll, T. Piwonski, J. Houlihan, G. Huyet, R. J. Manning, and B. Corbett, “Phase dynamics of InAs/GaAs quantum dot semiconductor optical amplifiers,” Appl. Phys. Lett.91(26), 263506 (2007).
[CrossRef]

Delfyett, P. J.

J. Y. Kim, M. T. Choi, and P. J. Delfyett, “Pulse generation and compression via ground and excited states from a grating coupled passively mode-locked quantum dot two-section diode laser,” Appl. Phys. Lett.89(26), 261106 (2006).
[CrossRef]

J. Y. Kim, M. T. Choi, W. K. Lee, and P. J. Delfyett., “Wavelength tunable mode-locked quantum-dot laser,” Proc. SPIE6243, 1–8 (2006).
[CrossRef]

Ding, Y.

M. A. Cataluna, Y. Ding, D. I. Nikitichev, K. A. Fedorova, and E. U. Rafailov, “High-power versatile picosecond pulse generation from mode-Locked quantum-dot laser diodes,” IEEE J. Sel. of Quantum Electron.17(5), 1302–1310 (2011).
[CrossRef]

Drzewietzki, L.

S. Breuer, M. Rossetti, L. Drzewietzki, P. Bardella, I. Montrosset, and W. Elsäßer, “Joint experimental and theoretical investigations of two-state mode locking in a strongly chirped reverse-biased monolithic quantum dot laser,” IEEE J. Quantum Electron.47(10), 1320–1329 (2011).
[CrossRef]

S. Breuer, M. Rossetti, W. Elsässer, L. Drzewietzki, P. Bardella, I. Montrosset, M. Krakowski, and M. Hopkinson, “Reverse-emission-state-transition mode locking of a two-section InAs/InGaAs quantum dot laser,” Appl. Phys. Lett.97(7), 071118 (2010).
[CrossRef]

Egorov, A. Y.

A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, A. Y. Egorov, N. N. Ledentsov, A. F. Tsatsul’nikov, M. V. Maximov, Y. M. Shernyakov, V. I. Kopchatov, A. V. Lunev, P. S. Kop’ev, D. Bimberg, and Z. I. Alferov, “Gain characteristics of quantum dot injection lasers,” Semicond. Sci. Technol.14(1), 118–123 (1999).
[CrossRef]

Elsäßer, W.

S. Breuer, M. Rossetti, L. Drzewietzki, P. Bardella, I. Montrosset, and W. Elsäßer, “Joint experimental and theoretical investigations of two-state mode locking in a strongly chirped reverse-biased monolithic quantum dot laser,” IEEE J. Quantum Electron.47(10), 1320–1329 (2011).
[CrossRef]

Elsässer, W.

S. Breuer, M. Rossetti, W. Elsässer, L. Drzewietzki, P. Bardella, I. Montrosset, M. Krakowski, and M. Hopkinson, “Reverse-emission-state-transition mode locking of a two-section InAs/InGaAs quantum dot laser,” Appl. Phys. Lett.97(7), 071118 (2010).
[CrossRef]

Erneux, T.

T. Piwonski, J. Pulka, G. Madden, G. Huyet, J. Houlihan, E. A. Viktorov, T. Erneux, and P. Mandel, “Intradot dynamics of InAs quantum dot based electroabsorbers,” Appl. Phys. Lett.94(12), 123504 (2009).
[CrossRef]

Fedorova, K. A.

M. A. Cataluna, Y. Ding, D. I. Nikitichev, K. A. Fedorova, and E. U. Rafailov, “High-power versatile picosecond pulse generation from mode-Locked quantum-dot laser diodes,” IEEE J. Sel. of Quantum Electron.17(5), 1302–1310 (2011).
[CrossRef]

Fiol, G.

M. Kuntz, G. Fiol, M. Laemmlin, C. Meuer, and D. Bimberg, “High-speed mode-locked quantum-dot lasers and optical amplifiers,” Proc. IEEE95(9), 1767–1778 (2007).
[CrossRef]

Fiore, A.

A. Markus, M. Rossetti, V. Calligari, D. Chek-Al-Kar, J. X. Chen, A. Fiore, and R. Scollo, “Two-state switching and dynamics in quantum dot two-section lasers,” J. Appl. Phys.100(11), 113104 (2006).
[CrossRef]

A. Markus, J. X. Chen, O. Gauthier-Lafaye, J. G. Provost, C. Paranthoën, and A. Fiore, “Impact of intraband relaxation on the performance of a quantum-dot laser,” IEEE J. Sel. Top. Quantum Electron.9(5), 1308–1314 (2003).
[CrossRef]

Gauthier-Lafaye, O.

A. Markus, J. X. Chen, O. Gauthier-Lafaye, J. G. Provost, C. Paranthoën, and A. Fiore, “Impact of intraband relaxation on the performance of a quantum-dot laser,” IEEE J. Sel. Top. Quantum Electron.9(5), 1308–1314 (2003).
[CrossRef]

Gomez-Iglesias, A.

D. B. Malins, A. Gomez-Iglesias, S. J. White, W. Sibbett, A. Miller, and E. U. Rafailov, “Ultrafast electroabsorption dynamics in an InAs quantum dot saturable absorber at 1.3 μm,” Appl. Phys. Lett.89(17), 171111 (2006).
[CrossRef]

Gu, Y. X.

Hopkinson, M.

S. Breuer, M. Rossetti, W. Elsässer, L. Drzewietzki, P. Bardella, I. Montrosset, M. Krakowski, and M. Hopkinson, “Reverse-emission-state-transition mode locking of a two-section InAs/InGaAs quantum dot laser,” Appl. Phys. Lett.97(7), 071118 (2010).
[CrossRef]

Houlihan, J.

T. Piwonski, J. Pulka, E. A. Viktorov, G. Huyet, and J. Houlihan, “Refractive index dynamics of quantum dot based waveguide electroabsorbers,” Appl. Phys. Lett.97(5), 051107 (2010).
[CrossRef]

T. Piwonski, J. Pulka, G. Madden, G. Huyet, J. Houlihan, E. A. Viktorov, T. Erneux, and P. Mandel, “Intradot dynamics of InAs quantum dot based electroabsorbers,” Appl. Phys. Lett.94(12), 123504 (2009).
[CrossRef]

A. I. O‘Driscoll, T. Piwonski, J. Houlihan, G. Huyet, R. J. Manning, and B. Corbett, “Phase dynamics of InAs/GaAs quantum dot semiconductor optical amplifiers,” Appl. Phys. Lett.91(26), 263506 (2007).
[CrossRef]

Huang, X. D.

X. D. Huang, A. Stintz, H. Li, A. Rice, G. T. Liu, L. F. Lester, J. Cheng, and K. J. Malloy, “Bistable operation of a two-section 1.3-μm InAs quantum dot laser—absorption saturation and the quantum confined stark effect,” IEEE J. Quantum Electron.37(3), 414–417 (2001).
[CrossRef]

X. D. Huang, A. Stintz, H. Li, L. F. Lester, J. Cheng, and K. J. Malloy, “Passive mode-locking in 1.3 um two-section InAs quantum dot lasers,” Appl. Phys. Lett.78(19), 2825–2827 (2001).
[CrossRef]

Huang, Y. Z.

Huyet, G.

T. Piwonski, J. Pulka, E. A. Viktorov, G. Huyet, and J. Houlihan, “Refractive index dynamics of quantum dot based waveguide electroabsorbers,” Appl. Phys. Lett.97(5), 051107 (2010).
[CrossRef]

T. Piwonski, J. Pulka, G. Madden, G. Huyet, J. Houlihan, E. A. Viktorov, T. Erneux, and P. Mandel, “Intradot dynamics of InAs quantum dot based electroabsorbers,” Appl. Phys. Lett.94(12), 123504 (2009).
[CrossRef]

F. Kéfélian, S. O’Donoghue, M. T. Todaro, J. McInerney, and G. Huyet, “Experimental investigation of different regimes of mode-locking in a high repetition rate passively mode-locked semiconductor quantum-dot laser,” Opt. Express17(8), 6258–6267 (2009).
[CrossRef] [PubMed]

A. I. O‘Driscoll, T. Piwonski, J. Houlihan, G. Huyet, R. J. Manning, and B. Corbett, “Phase dynamics of InAs/GaAs quantum dot semiconductor optical amplifiers,” Appl. Phys. Lett.91(26), 263506 (2007).
[CrossRef]

Ji, H. M.

Jiang, L. W.

L. W. Jiang, X. L. Ye, X. L. Zhou, P. Jin, X. Q. Lü, and Z. G. Wang, “Optical bistability in a two-section InAs quantum-dot laser,” J. Semicond.31(11), 114012 (2010).
[CrossRef]

Jiao, Y. H.

L. W. Shi, Y. H. Chen, B. Xu, Z. C. Wang, Y. H. Jiao, and Z. G. Wang, “Status and trends of short pulse generation using mode-locked lasers based on advanced quantum-dot active media,” J. Phys. D Appl. Phys.40(18), R307–R318 (2007).
[CrossRef]

Jin, P.

L. W. Jiang, X. L. Ye, X. L. Zhou, P. Jin, X. Q. Lü, and Z. G. Wang, “Optical bistability in a two-section InAs quantum-dot laser,” J. Semicond.31(11), 114012 (2010).
[CrossRef]

Kawaguchi, H.

H. Kawaguchi, “Absorptive and dispersive bistability in semiconductor injection lasers,” Opt. Quantum Electron.19(S1), S1–S36 (1987).
[CrossRef]

Kéfélian, F.

Kim, J. Y.

J. Y. Kim, M. T. Choi, and P. J. Delfyett, “Pulse generation and compression via ground and excited states from a grating coupled passively mode-locked quantum dot two-section diode laser,” Appl. Phys. Lett.89(26), 261106 (2006).
[CrossRef]

J. Y. Kim, M. T. Choi, W. K. Lee, and P. J. Delfyett., “Wavelength tunable mode-locked quantum-dot laser,” Proc. SPIE6243, 1–8 (2006).
[CrossRef]

Koch, S. W.

H. C. Schneider, W. W. Chow, and S. W. Koch, “Anomalous carrier-induced dispersion in quantum-dot,” Phys. Rev. B66(4), 041310 (2002).
[CrossRef]

Kop’ev, P. S.

A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, A. Y. Egorov, N. N. Ledentsov, A. F. Tsatsul’nikov, M. V. Maximov, Y. M. Shernyakov, V. I. Kopchatov, A. V. Lunev, P. S. Kop’ev, D. Bimberg, and Z. I. Alferov, “Gain characteristics of quantum dot injection lasers,” Semicond. Sci. Technol.14(1), 118–123 (1999).
[CrossRef]

Kopchatov, V. I.

A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, A. Y. Egorov, N. N. Ledentsov, A. F. Tsatsul’nikov, M. V. Maximov, Y. M. Shernyakov, V. I. Kopchatov, A. V. Lunev, P. S. Kop’ev, D. Bimberg, and Z. I. Alferov, “Gain characteristics of quantum dot injection lasers,” Semicond. Sci. Technol.14(1), 118–123 (1999).
[CrossRef]

Kovsh, A. R.

M. A. Cataluna, A. R. Kovsh, and E. U. Rafailov, “Stable mode locking via ground- or excited-state transitions in a two-section quantum-dot laser,” Appl. Phys. Lett.89(8), 081124 (2006).
[CrossRef]

M. A. Cataluna, E. U. Rafailov, A. D. McRobbie, W. Sibbett, D. A. Livshits, and A. R. Kovsh, “Stable Mode-Locked Operation up to 80 °C From an InGaAs Quantum-Dot Laser,” IEEE Photon. Technol. Lett.18(14), 1500–1502 (2006).
[CrossRef]

M. G. Thompson, A. Rae, R. L. Sellin, C. Marinelli, R. V. Penty, I. H. White, A. R. Kovsh, S. S. Mikhrin, D. A. Livshits, and I. L. Krestnikov, “Subpicosecond high-power mode locking using flared waveguide monolithic quantum-dot lasers,” Appl. Phys. Lett.88(13), 133119 (2006).
[CrossRef]

A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, A. Y. Egorov, N. N. Ledentsov, A. F. Tsatsul’nikov, M. V. Maximov, Y. M. Shernyakov, V. I. Kopchatov, A. V. Lunev, P. S. Kop’ev, D. Bimberg, and Z. I. Alferov, “Gain characteristics of quantum dot injection lasers,” Semicond. Sci. Technol.14(1), 118–123 (1999).
[CrossRef]

Krakowski, M.

S. Breuer, M. Rossetti, W. Elsässer, L. Drzewietzki, P. Bardella, I. Montrosset, M. Krakowski, and M. Hopkinson, “Reverse-emission-state-transition mode locking of a two-section InAs/InGaAs quantum dot laser,” Appl. Phys. Lett.97(7), 071118 (2010).
[CrossRef]

Krestnikov, I.

Krestnikov, I. L.

M. G. Thompson, A. Rae, R. L. Sellin, C. Marinelli, R. V. Penty, I. H. White, A. R. Kovsh, S. S. Mikhrin, D. A. Livshits, and I. L. Krestnikov, “Subpicosecond high-power mode locking using flared waveguide monolithic quantum-dot lasers,” Appl. Phys. Lett.88(13), 133119 (2006).
[CrossRef]

Kuntz, M.

M. Kuntz, G. Fiol, M. Laemmlin, C. Meuer, and D. Bimberg, “High-speed mode-locked quantum-dot lasers and optical amplifiers,” Proc. IEEE95(9), 1767–1778 (2007).
[CrossRef]

Laemmlin, M.

M. Kuntz, G. Fiol, M. Laemmlin, C. Meuer, and D. Bimberg, “High-speed mode-locked quantum-dot lasers and optical amplifiers,” Proc. IEEE95(9), 1767–1778 (2007).
[CrossRef]

Lang, R.

M. Ueno and R. Lang, “Conditions for self-sustained pulsation and bistability in semiconductor lasers,” J. Appl. Phys.58(4), 1689–1692 (1985).
[CrossRef]

Langbein, W.

S. Schneider, P. Borri, W. Langbein, U. Woggon, R. L. Sellin, D. Ouyang, and D. Bimberg, “Excited-state gain dynamics in InGaAs quantum-dot amplifiers,” IEEE Photon. Technol. Lett.17(10), 2014–2016 (2005).
[CrossRef]

Ledentsov, N. N.

A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, A. Y. Egorov, N. N. Ledentsov, A. F. Tsatsul’nikov, M. V. Maximov, Y. M. Shernyakov, V. I. Kopchatov, A. V. Lunev, P. S. Kop’ev, D. Bimberg, and Z. I. Alferov, “Gain characteristics of quantum dot injection lasers,” Semicond. Sci. Technol.14(1), 118–123 (1999).
[CrossRef]

Lee, C. P.

H. Y. Wang, H. C. Cheng, S. D. Lin, and C. P. Lee, “Wavelength switching transition in quantum dot lasers,” Appl. Phys. Lett.90(8), 081112 (2007).
[CrossRef]

Lee, W. K.

J. Y. Kim, M. T. Choi, W. K. Lee, and P. J. Delfyett., “Wavelength tunable mode-locked quantum-dot laser,” Proc. SPIE6243, 1–8 (2006).
[CrossRef]

Lester, L. F.

X. D. Huang, A. Stintz, H. Li, A. Rice, G. T. Liu, L. F. Lester, J. Cheng, and K. J. Malloy, “Bistable operation of a two-section 1.3-μm InAs quantum dot laser—absorption saturation and the quantum confined stark effect,” IEEE J. Quantum Electron.37(3), 414–417 (2001).
[CrossRef]

X. D. Huang, A. Stintz, H. Li, L. F. Lester, J. Cheng, and K. J. Malloy, “Passive mode-locking in 1.3 um two-section InAs quantum dot lasers,” Appl. Phys. Lett.78(19), 2825–2827 (2001).
[CrossRef]

Li, H.

X. D. Huang, A. Stintz, H. Li, L. F. Lester, J. Cheng, and K. J. Malloy, “Passive mode-locking in 1.3 um two-section InAs quantum dot lasers,” Appl. Phys. Lett.78(19), 2825–2827 (2001).
[CrossRef]

X. D. Huang, A. Stintz, H. Li, A. Rice, G. T. Liu, L. F. Lester, J. Cheng, and K. J. Malloy, “Bistable operation of a two-section 1.3-μm InAs quantum dot laser—absorption saturation and the quantum confined stark effect,” IEEE J. Quantum Electron.37(3), 414–417 (2001).
[CrossRef]

Lin, S. D.

H. Y. Wang, H. C. Cheng, S. D. Lin, and C. P. Lee, “Wavelength switching transition in quantum dot lasers,” Appl. Phys. Lett.90(8), 081112 (2007).
[CrossRef]

Liu, G. T.

X. D. Huang, A. Stintz, H. Li, A. Rice, G. T. Liu, L. F. Lester, J. Cheng, and K. J. Malloy, “Bistable operation of a two-section 1.3-μm InAs quantum dot laser—absorption saturation and the quantum confined stark effect,” IEEE J. Quantum Electron.37(3), 414–417 (2001).
[CrossRef]

Livshits, D.

Livshits, D. A.

M. A. Cataluna, E. U. Rafailov, A. D. McRobbie, W. Sibbett, D. A. Livshits, and A. R. Kovsh, “Stable Mode-Locked Operation up to 80 °C From an InGaAs Quantum-Dot Laser,” IEEE Photon. Technol. Lett.18(14), 1500–1502 (2006).
[CrossRef]

M. G. Thompson, A. Rae, R. L. Sellin, C. Marinelli, R. V. Penty, I. H. White, A. R. Kovsh, S. S. Mikhrin, D. A. Livshits, and I. L. Krestnikov, “Subpicosecond high-power mode locking using flared waveguide monolithic quantum-dot lasers,” Appl. Phys. Lett.88(13), 133119 (2006).
[CrossRef]

Lü, X. Q.

L. W. Jiang, X. L. Ye, X. L. Zhou, P. Jin, X. Q. Lü, and Z. G. Wang, “Optical bistability in a two-section InAs quantum-dot laser,” J. Semicond.31(11), 114012 (2010).
[CrossRef]

Lunev, A. V.

A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, A. Y. Egorov, N. N. Ledentsov, A. F. Tsatsul’nikov, M. V. Maximov, Y. M. Shernyakov, V. I. Kopchatov, A. V. Lunev, P. S. Kop’ev, D. Bimberg, and Z. I. Alferov, “Gain characteristics of quantum dot injection lasers,” Semicond. Sci. Technol.14(1), 118–123 (1999).
[CrossRef]

Madden, G.

T. Piwonski, J. Pulka, G. Madden, G. Huyet, J. Houlihan, E. A. Viktorov, T. Erneux, and P. Mandel, “Intradot dynamics of InAs quantum dot based electroabsorbers,” Appl. Phys. Lett.94(12), 123504 (2009).
[CrossRef]

Malins, D. B.

D. B. Malins, A. Gomez-Iglesias, S. J. White, W. Sibbett, A. Miller, and E. U. Rafailov, “Ultrafast electroabsorption dynamics in an InAs quantum dot saturable absorber at 1.3 μm,” Appl. Phys. Lett.89(17), 171111 (2006).
[CrossRef]

Malloy, K. J.

X. D. Huang, A. Stintz, H. Li, A. Rice, G. T. Liu, L. F. Lester, J. Cheng, and K. J. Malloy, “Bistable operation of a two-section 1.3-μm InAs quantum dot laser—absorption saturation and the quantum confined stark effect,” IEEE J. Quantum Electron.37(3), 414–417 (2001).
[CrossRef]

X. D. Huang, A. Stintz, H. Li, L. F. Lester, J. Cheng, and K. J. Malloy, “Passive mode-locking in 1.3 um two-section InAs quantum dot lasers,” Appl. Phys. Lett.78(19), 2825–2827 (2001).
[CrossRef]

Mandel, P.

T. Piwonski, J. Pulka, G. Madden, G. Huyet, J. Houlihan, E. A. Viktorov, T. Erneux, and P. Mandel, “Intradot dynamics of InAs quantum dot based electroabsorbers,” Appl. Phys. Lett.94(12), 123504 (2009).
[CrossRef]

Manning, R. J.

A. I. O‘Driscoll, T. Piwonski, J. Houlihan, G. Huyet, R. J. Manning, and B. Corbett, “Phase dynamics of InAs/GaAs quantum dot semiconductor optical amplifiers,” Appl. Phys. Lett.91(26), 263506 (2007).
[CrossRef]

Marinelli, C.

M. G. Thompson, A. Rae, R. L. Sellin, C. Marinelli, R. V. Penty, I. H. White, A. R. Kovsh, S. S. Mikhrin, D. A. Livshits, and I. L. Krestnikov, “Subpicosecond high-power mode locking using flared waveguide monolithic quantum-dot lasers,” Appl. Phys. Lett.88(13), 133119 (2006).
[CrossRef]

Markus, A.

A. Markus, M. Rossetti, V. Calligari, D. Chek-Al-Kar, J. X. Chen, A. Fiore, and R. Scollo, “Two-state switching and dynamics in quantum dot two-section lasers,” J. Appl. Phys.100(11), 113104 (2006).
[CrossRef]

A. Markus, J. X. Chen, O. Gauthier-Lafaye, J. G. Provost, C. Paranthoën, and A. Fiore, “Impact of intraband relaxation on the performance of a quantum-dot laser,” IEEE J. Sel. Top. Quantum Electron.9(5), 1308–1314 (2003).
[CrossRef]

Maximov, M. V.

A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, A. Y. Egorov, N. N. Ledentsov, A. F. Tsatsul’nikov, M. V. Maximov, Y. M. Shernyakov, V. I. Kopchatov, A. V. Lunev, P. S. Kop’ev, D. Bimberg, and Z. I. Alferov, “Gain characteristics of quantum dot injection lasers,” Semicond. Sci. Technol.14(1), 118–123 (1999).
[CrossRef]

McInerney, J.

McRobbie, A. D.

M. A. Cataluna, E. U. Rafailov, A. D. McRobbie, W. Sibbett, D. A. Livshits, and A. R. Kovsh, “Stable Mode-Locked Operation up to 80 °C From an InGaAs Quantum-Dot Laser,” IEEE Photon. Technol. Lett.18(14), 1500–1502 (2006).
[CrossRef]

Mesaritakis, C.

Meuer, C.

M. Kuntz, G. Fiol, M. Laemmlin, C. Meuer, and D. Bimberg, “High-speed mode-locked quantum-dot lasers and optical amplifiers,” Proc. IEEE95(9), 1767–1778 (2007).
[CrossRef]

Mikhrin, S. S.

M. G. Thompson, A. Rae, R. L. Sellin, C. Marinelli, R. V. Penty, I. H. White, A. R. Kovsh, S. S. Mikhrin, D. A. Livshits, and I. L. Krestnikov, “Subpicosecond high-power mode locking using flared waveguide monolithic quantum-dot lasers,” Appl. Phys. Lett.88(13), 133119 (2006).
[CrossRef]

Mikroulis, S.

Miller, A.

D. B. Malins, A. Gomez-Iglesias, S. J. White, W. Sibbett, A. Miller, and E. U. Rafailov, “Ultrafast electroabsorption dynamics in an InAs quantum dot saturable absorber at 1.3 μm,” Appl. Phys. Lett.89(17), 171111 (2006).
[CrossRef]

Montrosset, I.

T. H. Xu, M. Rossetti, P. Bardella, and I. Montrosset, “Simulation and analysis of dynamic regimes involving ground and excited state transitions in quantum dot passively mode-locked lasers,” IEEE J. Quantum Electron.48(9), 1193–1202 (2012).
[CrossRef]

S. Breuer, M. Rossetti, L. Drzewietzki, P. Bardella, I. Montrosset, and W. Elsäßer, “Joint experimental and theoretical investigations of two-state mode locking in a strongly chirped reverse-biased monolithic quantum dot laser,” IEEE J. Quantum Electron.47(10), 1320–1329 (2011).
[CrossRef]

S. Breuer, M. Rossetti, W. Elsässer, L. Drzewietzki, P. Bardella, I. Montrosset, M. Krakowski, and M. Hopkinson, “Reverse-emission-state-transition mode locking of a two-section InAs/InGaAs quantum dot laser,” Appl. Phys. Lett.97(7), 071118 (2010).
[CrossRef]

Nikitichev, D. I.

M. A. Cataluna, Y. Ding, D. I. Nikitichev, K. A. Fedorova, and E. U. Rafailov, “High-power versatile picosecond pulse generation from mode-Locked quantum-dot laser diodes,” IEEE J. Sel. of Quantum Electron.17(5), 1302–1310 (2011).
[CrossRef]

M. A. Cataluna, D. I. Nikitichev, S. Mikroulis, H. Simos, C. Simos, C. Mesaritakis, D. Syvridis, I. Krestnikov, D. Livshits, and E. U. Rafailov, “Dual-wavelength mode-locked quantum-dot laser, via ground and excited state transitions: experimental and theoretical investigation,” Opt. Express18(12), 12832–12838 (2010).
[CrossRef] [PubMed]

O‘Driscoll, A. I.

A. I. O‘Driscoll, T. Piwonski, J. Houlihan, G. Huyet, R. J. Manning, and B. Corbett, “Phase dynamics of InAs/GaAs quantum dot semiconductor optical amplifiers,” Appl. Phys. Lett.91(26), 263506 (2007).
[CrossRef]

O’Donoghue, S.

Ogawa, Y.

S. Arahira and Y. Ogawa, “Repetition – frequency tuning of monolithic passively mode-locked semiconductor lasers with integrated extended cavities,” IEEE J. Quantum Electron.33(2), 255–264 (1997).
[CrossRef]

Ouyang, D.

S. Schneider, P. Borri, W. Langbein, U. Woggon, R. L. Sellin, D. Ouyang, and D. Bimberg, “Excited-state gain dynamics in InGaAs quantum-dot amplifiers,” IEEE Photon. Technol. Lett.17(10), 2014–2016 (2005).
[CrossRef]

Paranthoën, C.

A. Markus, J. X. Chen, O. Gauthier-Lafaye, J. G. Provost, C. Paranthoën, and A. Fiore, “Impact of intraband relaxation on the performance of a quantum-dot laser,” IEEE J. Sel. Top. Quantum Electron.9(5), 1308–1314 (2003).
[CrossRef]

Penty, R. V.

G. Carpintero, M. G. Thompson, K. Yvind, R. V. Penty, and I. H. White, “Comparison of the noise performance of 10 GHz repetition rate quantum-dot and quantum well monolithic mode-locked semiconductor lasers,” IET Optoelectron.5(5), 195–201 (2011).
[CrossRef]

M. G. Thompson, A. R. Rae, M. Xia, R. V. Penty, and I. H. White, “InGaAs quantum-dot mode-locked laser diodes,” IEEE J. Sel. Top. Quantum Electron.15(3), 661–672 (2009).
[CrossRef]

M. G. Thompson, A. Rae, R. L. Sellin, C. Marinelli, R. V. Penty, I. H. White, A. R. Kovsh, S. S. Mikhrin, D. A. Livshits, and I. L. Krestnikov, “Subpicosecond high-power mode locking using flared waveguide monolithic quantum-dot lasers,” Appl. Phys. Lett.88(13), 133119 (2006).
[CrossRef]

Piwonski, T.

T. Piwonski, J. Pulka, E. A. Viktorov, G. Huyet, and J. Houlihan, “Refractive index dynamics of quantum dot based waveguide electroabsorbers,” Appl. Phys. Lett.97(5), 051107 (2010).
[CrossRef]

T. Piwonski, J. Pulka, G. Madden, G. Huyet, J. Houlihan, E. A. Viktorov, T. Erneux, and P. Mandel, “Intradot dynamics of InAs quantum dot based electroabsorbers,” Appl. Phys. Lett.94(12), 123504 (2009).
[CrossRef]

A. I. O‘Driscoll, T. Piwonski, J. Houlihan, G. Huyet, R. J. Manning, and B. Corbett, “Phase dynamics of InAs/GaAs quantum dot semiconductor optical amplifiers,” Appl. Phys. Lett.91(26), 263506 (2007).
[CrossRef]

Provost, J. G.

A. Markus, J. X. Chen, O. Gauthier-Lafaye, J. G. Provost, C. Paranthoën, and A. Fiore, “Impact of intraband relaxation on the performance of a quantum-dot laser,” IEEE J. Sel. Top. Quantum Electron.9(5), 1308–1314 (2003).
[CrossRef]

Pulka, J.

T. Piwonski, J. Pulka, E. A. Viktorov, G. Huyet, and J. Houlihan, “Refractive index dynamics of quantum dot based waveguide electroabsorbers,” Appl. Phys. Lett.97(5), 051107 (2010).
[CrossRef]

T. Piwonski, J. Pulka, G. Madden, G. Huyet, J. Houlihan, E. A. Viktorov, T. Erneux, and P. Mandel, “Intradot dynamics of InAs quantum dot based electroabsorbers,” Appl. Phys. Lett.94(12), 123504 (2009).
[CrossRef]

Rae, A.

M. G. Thompson, A. Rae, R. L. Sellin, C. Marinelli, R. V. Penty, I. H. White, A. R. Kovsh, S. S. Mikhrin, D. A. Livshits, and I. L. Krestnikov, “Subpicosecond high-power mode locking using flared waveguide monolithic quantum-dot lasers,” Appl. Phys. Lett.88(13), 133119 (2006).
[CrossRef]

Rae, A. R.

M. G. Thompson, A. R. Rae, M. Xia, R. V. Penty, and I. H. White, “InGaAs quantum-dot mode-locked laser diodes,” IEEE J. Sel. Top. Quantum Electron.15(3), 661–672 (2009).
[CrossRef]

Rafailov, E. U.

M. A. Cataluna, Y. Ding, D. I. Nikitichev, K. A. Fedorova, and E. U. Rafailov, “High-power versatile picosecond pulse generation from mode-Locked quantum-dot laser diodes,” IEEE J. Sel. of Quantum Electron.17(5), 1302–1310 (2011).
[CrossRef]

M. A. Cataluna, D. I. Nikitichev, S. Mikroulis, H. Simos, C. Simos, C. Mesaritakis, D. Syvridis, I. Krestnikov, D. Livshits, and E. U. Rafailov, “Dual-wavelength mode-locked quantum-dot laser, via ground and excited state transitions: experimental and theoretical investigation,” Opt. Express18(12), 12832–12838 (2010).
[CrossRef] [PubMed]

E. U. Rafailov, M. A. Cataluna, and W. Sibbett, “Mode-locked quantum-dot lasers,” Nat. Photonics1(7), 395–401 (2007).
[CrossRef]

D. B. Malins, A. Gomez-Iglesias, S. J. White, W. Sibbett, A. Miller, and E. U. Rafailov, “Ultrafast electroabsorption dynamics in an InAs quantum dot saturable absorber at 1.3 μm,” Appl. Phys. Lett.89(17), 171111 (2006).
[CrossRef]

M. A. Cataluna, E. U. Rafailov, A. D. McRobbie, W. Sibbett, D. A. Livshits, and A. R. Kovsh, “Stable Mode-Locked Operation up to 80 °C From an InGaAs Quantum-Dot Laser,” IEEE Photon. Technol. Lett.18(14), 1500–1502 (2006).
[CrossRef]

M. A. Cataluna, A. R. Kovsh, and E. U. Rafailov, “Stable mode locking via ground- or excited-state transitions in a two-section quantum-dot laser,” Appl. Phys. Lett.89(8), 081124 (2006).
[CrossRef]

Rice, A.

X. D. Huang, A. Stintz, H. Li, A. Rice, G. T. Liu, L. F. Lester, J. Cheng, and K. J. Malloy, “Bistable operation of a two-section 1.3-μm InAs quantum dot laser—absorption saturation and the quantum confined stark effect,” IEEE J. Quantum Electron.37(3), 414–417 (2001).
[CrossRef]

Rossetti, M.

T. H. Xu, M. Rossetti, P. Bardella, and I. Montrosset, “Simulation and analysis of dynamic regimes involving ground and excited state transitions in quantum dot passively mode-locked lasers,” IEEE J. Quantum Electron.48(9), 1193–1202 (2012).
[CrossRef]

S. Breuer, M. Rossetti, L. Drzewietzki, P. Bardella, I. Montrosset, and W. Elsäßer, “Joint experimental and theoretical investigations of two-state mode locking in a strongly chirped reverse-biased monolithic quantum dot laser,” IEEE J. Quantum Electron.47(10), 1320–1329 (2011).
[CrossRef]

S. Breuer, M. Rossetti, W. Elsässer, L. Drzewietzki, P. Bardella, I. Montrosset, M. Krakowski, and M. Hopkinson, “Reverse-emission-state-transition mode locking of a two-section InAs/InGaAs quantum dot laser,” Appl. Phys. Lett.97(7), 071118 (2010).
[CrossRef]

A. Markus, M. Rossetti, V. Calligari, D. Chek-Al-Kar, J. X. Chen, A. Fiore, and R. Scollo, “Two-state switching and dynamics in quantum dot two-section lasers,” J. Appl. Phys.100(11), 113104 (2006).
[CrossRef]

Schneider, H. C.

H. C. Schneider, W. W. Chow, and S. W. Koch, “Anomalous carrier-induced dispersion in quantum-dot,” Phys. Rev. B66(4), 041310 (2002).
[CrossRef]

Schneider, S.

S. Schneider, P. Borri, W. Langbein, U. Woggon, R. L. Sellin, D. Ouyang, and D. Bimberg, “Excited-state gain dynamics in InGaAs quantum-dot amplifiers,” IEEE Photon. Technol. Lett.17(10), 2014–2016 (2005).
[CrossRef]

Scollo, R.

A. Markus, M. Rossetti, V. Calligari, D. Chek-Al-Kar, J. X. Chen, A. Fiore, and R. Scollo, “Two-state switching and dynamics in quantum dot two-section lasers,” J. Appl. Phys.100(11), 113104 (2006).
[CrossRef]

Sellin, R. L.

M. G. Thompson, A. Rae, R. L. Sellin, C. Marinelli, R. V. Penty, I. H. White, A. R. Kovsh, S. S. Mikhrin, D. A. Livshits, and I. L. Krestnikov, “Subpicosecond high-power mode locking using flared waveguide monolithic quantum-dot lasers,” Appl. Phys. Lett.88(13), 133119 (2006).
[CrossRef]

S. Schneider, P. Borri, W. Langbein, U. Woggon, R. L. Sellin, D. Ouyang, and D. Bimberg, “Excited-state gain dynamics in InGaAs quantum-dot amplifiers,” IEEE Photon. Technol. Lett.17(10), 2014–2016 (2005).
[CrossRef]

Shernyakov, Y. M.

A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, A. Y. Egorov, N. N. Ledentsov, A. F. Tsatsul’nikov, M. V. Maximov, Y. M. Shernyakov, V. I. Kopchatov, A. V. Lunev, P. S. Kop’ev, D. Bimberg, and Z. I. Alferov, “Gain characteristics of quantum dot injection lasers,” Semicond. Sci. Technol.14(1), 118–123 (1999).
[CrossRef]

Shi, L. W.

L. W. Shi, Y. H. Chen, B. Xu, Z. C. Wang, Y. H. Jiao, and Z. G. Wang, “Status and trends of short pulse generation using mode-locked lasers based on advanced quantum-dot active media,” J. Phys. D Appl. Phys.40(18), R307–R318 (2007).
[CrossRef]

Sibbett, W.

E. U. Rafailov, M. A. Cataluna, and W. Sibbett, “Mode-locked quantum-dot lasers,” Nat. Photonics1(7), 395–401 (2007).
[CrossRef]

D. B. Malins, A. Gomez-Iglesias, S. J. White, W. Sibbett, A. Miller, and E. U. Rafailov, “Ultrafast electroabsorption dynamics in an InAs quantum dot saturable absorber at 1.3 μm,” Appl. Phys. Lett.89(17), 171111 (2006).
[CrossRef]

M. A. Cataluna, E. U. Rafailov, A. D. McRobbie, W. Sibbett, D. A. Livshits, and A. R. Kovsh, “Stable Mode-Locked Operation up to 80 °C From an InGaAs Quantum-Dot Laser,” IEEE Photon. Technol. Lett.18(14), 1500–1502 (2006).
[CrossRef]

Simos, C.

Simos, H.

Stintz, A.

X. D. Huang, A. Stintz, H. Li, A. Rice, G. T. Liu, L. F. Lester, J. Cheng, and K. J. Malloy, “Bistable operation of a two-section 1.3-μm InAs quantum dot laser—absorption saturation and the quantum confined stark effect,” IEEE J. Quantum Electron.37(3), 414–417 (2001).
[CrossRef]

X. D. Huang, A. Stintz, H. Li, L. F. Lester, J. Cheng, and K. J. Malloy, “Passive mode-locking in 1.3 um two-section InAs quantum dot lasers,” Appl. Phys. Lett.78(19), 2825–2827 (2001).
[CrossRef]

Syvridis, D.

Thompson, M. G.

G. Carpintero, M. G. Thompson, K. Yvind, R. V. Penty, and I. H. White, “Comparison of the noise performance of 10 GHz repetition rate quantum-dot and quantum well monolithic mode-locked semiconductor lasers,” IET Optoelectron.5(5), 195–201 (2011).
[CrossRef]

M. G. Thompson, A. R. Rae, M. Xia, R. V. Penty, and I. H. White, “InGaAs quantum-dot mode-locked laser diodes,” IEEE J. Sel. Top. Quantum Electron.15(3), 661–672 (2009).
[CrossRef]

M. G. Thompson, A. Rae, R. L. Sellin, C. Marinelli, R. V. Penty, I. H. White, A. R. Kovsh, S. S. Mikhrin, D. A. Livshits, and I. L. Krestnikov, “Subpicosecond high-power mode locking using flared waveguide monolithic quantum-dot lasers,” Appl. Phys. Lett.88(13), 133119 (2006).
[CrossRef]

K. A. Williams, M. G. Thompson, and I. H. White, “Long-wavelength monolithic mode-locked diode lasers,” New J. Phys.6, 179 (2004).
[CrossRef]

Todaro, M. T.

Treacy, E. B.

E. B. Treacy, “Optical pulse compression with diffraction gratings,” IEEE J. Quantum Electron.5(9), 454–458 (1969).
[CrossRef]

Tsatsul’nikov, A. F.

A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, A. Y. Egorov, N. N. Ledentsov, A. F. Tsatsul’nikov, M. V. Maximov, Y. M. Shernyakov, V. I. Kopchatov, A. V. Lunev, P. S. Kop’ev, D. Bimberg, and Z. I. Alferov, “Gain characteristics of quantum dot injection lasers,” Semicond. Sci. Technol.14(1), 118–123 (1999).
[CrossRef]

Ueno, M.

M. Ueno and R. Lang, “Conditions for self-sustained pulsation and bistability in semiconductor lasers,” J. Appl. Phys.58(4), 1689–1692 (1985).
[CrossRef]

Ustinov, V. M.

A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, A. Y. Egorov, N. N. Ledentsov, A. F. Tsatsul’nikov, M. V. Maximov, Y. M. Shernyakov, V. I. Kopchatov, A. V. Lunev, P. S. Kop’ev, D. Bimberg, and Z. I. Alferov, “Gain characteristics of quantum dot injection lasers,” Semicond. Sci. Technol.14(1), 118–123 (1999).
[CrossRef]

Viktorov, E. A.

T. Piwonski, J. Pulka, E. A. Viktorov, G. Huyet, and J. Houlihan, “Refractive index dynamics of quantum dot based waveguide electroabsorbers,” Appl. Phys. Lett.97(5), 051107 (2010).
[CrossRef]

T. Piwonski, J. Pulka, G. Madden, G. Huyet, J. Houlihan, E. A. Viktorov, T. Erneux, and P. Mandel, “Intradot dynamics of InAs quantum dot based electroabsorbers,” Appl. Phys. Lett.94(12), 123504 (2009).
[CrossRef]

Wang, H. Y.

H. Y. Wang, H. C. Cheng, S. D. Lin, and C. P. Lee, “Wavelength switching transition in quantum dot lasers,” Appl. Phys. Lett.90(8), 081112 (2007).
[CrossRef]

Wang, Z. C.

L. W. Shi, Y. H. Chen, B. Xu, Z. C. Wang, Y. H. Jiao, and Z. G. Wang, “Status and trends of short pulse generation using mode-locked lasers based on advanced quantum-dot active media,” J. Phys. D Appl. Phys.40(18), R307–R318 (2007).
[CrossRef]

Wang, Z. G.

L. W. Jiang, X. L. Ye, X. L. Zhou, P. Jin, X. Q. Lü, and Z. G. Wang, “Optical bistability in a two-section InAs quantum-dot laser,” J. Semicond.31(11), 114012 (2010).
[CrossRef]

L. W. Shi, Y. H. Chen, B. Xu, Z. C. Wang, Y. H. Jiao, and Z. G. Wang, “Status and trends of short pulse generation using mode-locked lasers based on advanced quantum-dot active media,” J. Phys. D Appl. Phys.40(18), R307–R318 (2007).
[CrossRef]

White, I. H.

G. Carpintero, M. G. Thompson, K. Yvind, R. V. Penty, and I. H. White, “Comparison of the noise performance of 10 GHz repetition rate quantum-dot and quantum well monolithic mode-locked semiconductor lasers,” IET Optoelectron.5(5), 195–201 (2011).
[CrossRef]

M. G. Thompson, A. R. Rae, M. Xia, R. V. Penty, and I. H. White, “InGaAs quantum-dot mode-locked laser diodes,” IEEE J. Sel. Top. Quantum Electron.15(3), 661–672 (2009).
[CrossRef]

M. G. Thompson, A. Rae, R. L. Sellin, C. Marinelli, R. V. Penty, I. H. White, A. R. Kovsh, S. S. Mikhrin, D. A. Livshits, and I. L. Krestnikov, “Subpicosecond high-power mode locking using flared waveguide monolithic quantum-dot lasers,” Appl. Phys. Lett.88(13), 133119 (2006).
[CrossRef]

K. A. Williams, M. G. Thompson, and I. H. White, “Long-wavelength monolithic mode-locked diode lasers,” New J. Phys.6, 179 (2004).
[CrossRef]

White, S. J.

D. B. Malins, A. Gomez-Iglesias, S. J. White, W. Sibbett, A. Miller, and E. U. Rafailov, “Ultrafast electroabsorption dynamics in an InAs quantum dot saturable absorber at 1.3 μm,” Appl. Phys. Lett.89(17), 171111 (2006).
[CrossRef]

Williams, K. A.

K. A. Williams, M. G. Thompson, and I. H. White, “Long-wavelength monolithic mode-locked diode lasers,” New J. Phys.6, 179 (2004).
[CrossRef]

Woggon, U.

S. Schneider, P. Borri, W. Langbein, U. Woggon, R. L. Sellin, D. Ouyang, and D. Bimberg, “Excited-state gain dynamics in InGaAs quantum-dot amplifiers,” IEEE Photon. Technol. Lett.17(10), 2014–2016 (2005).
[CrossRef]

Xia, M.

M. G. Thompson, A. R. Rae, M. Xia, R. V. Penty, and I. H. White, “InGaAs quantum-dot mode-locked laser diodes,” IEEE J. Sel. Top. Quantum Electron.15(3), 661–672 (2009).
[CrossRef]

Xiao, J. L.

Xu, B.

L. W. Shi, Y. H. Chen, B. Xu, Z. C. Wang, Y. H. Jiao, and Z. G. Wang, “Status and trends of short pulse generation using mode-locked lasers based on advanced quantum-dot active media,” J. Phys. D Appl. Phys.40(18), R307–R318 (2007).
[CrossRef]

Xu, P. F.

Xu, T. H.

T. H. Xu, M. Rossetti, P. Bardella, and I. Montrosset, “Simulation and analysis of dynamic regimes involving ground and excited state transitions in quantum dot passively mode-locked lasers,” IEEE J. Quantum Electron.48(9), 1193–1202 (2012).
[CrossRef]

Yang, T.

Ye, X. L.

L. W. Jiang, X. L. Ye, X. L. Zhou, P. Jin, X. Q. Lü, and Z. G. Wang, “Optical bistability in a two-section InAs quantum-dot laser,” J. Semicond.31(11), 114012 (2010).
[CrossRef]

Yvind, K.

G. Carpintero, M. G. Thompson, K. Yvind, R. V. Penty, and I. H. White, “Comparison of the noise performance of 10 GHz repetition rate quantum-dot and quantum well monolithic mode-locked semiconductor lasers,” IET Optoelectron.5(5), 195–201 (2011).
[CrossRef]

Zhou, X. L.

L. W. Jiang, X. L. Ye, X. L. Zhou, P. Jin, X. Q. Lü, and Z. G. Wang, “Optical bistability in a two-section InAs quantum-dot laser,” J. Semicond.31(11), 114012 (2010).
[CrossRef]

Zhukov, A. E.

A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, A. Y. Egorov, N. N. Ledentsov, A. F. Tsatsul’nikov, M. V. Maximov, Y. M. Shernyakov, V. I. Kopchatov, A. V. Lunev, P. S. Kop’ev, D. Bimberg, and Z. I. Alferov, “Gain characteristics of quantum dot injection lasers,” Semicond. Sci. Technol.14(1), 118–123 (1999).
[CrossRef]

Appl. Phys. Lett. (10)

H. Y. Wang, H. C. Cheng, S. D. Lin, and C. P. Lee, “Wavelength switching transition in quantum dot lasers,” Appl. Phys. Lett.90(8), 081112 (2007).
[CrossRef]

D. B. Malins, A. Gomez-Iglesias, S. J. White, W. Sibbett, A. Miller, and E. U. Rafailov, “Ultrafast electroabsorption dynamics in an InAs quantum dot saturable absorber at 1.3 μm,” Appl. Phys. Lett.89(17), 171111 (2006).
[CrossRef]

T. Piwonski, J. Pulka, G. Madden, G. Huyet, J. Houlihan, E. A. Viktorov, T. Erneux, and P. Mandel, “Intradot dynamics of InAs quantum dot based electroabsorbers,” Appl. Phys. Lett.94(12), 123504 (2009).
[CrossRef]

A. I. O‘Driscoll, T. Piwonski, J. Houlihan, G. Huyet, R. J. Manning, and B. Corbett, “Phase dynamics of InAs/GaAs quantum dot semiconductor optical amplifiers,” Appl. Phys. Lett.91(26), 263506 (2007).
[CrossRef]

S. Breuer, M. Rossetti, W. Elsässer, L. Drzewietzki, P. Bardella, I. Montrosset, M. Krakowski, and M. Hopkinson, “Reverse-emission-state-transition mode locking of a two-section InAs/InGaAs quantum dot laser,” Appl. Phys. Lett.97(7), 071118 (2010).
[CrossRef]

J. Y. Kim, M. T. Choi, and P. J. Delfyett, “Pulse generation and compression via ground and excited states from a grating coupled passively mode-locked quantum dot two-section diode laser,” Appl. Phys. Lett.89(26), 261106 (2006).
[CrossRef]

X. D. Huang, A. Stintz, H. Li, L. F. Lester, J. Cheng, and K. J. Malloy, “Passive mode-locking in 1.3 um two-section InAs quantum dot lasers,” Appl. Phys. Lett.78(19), 2825–2827 (2001).
[CrossRef]

M. G. Thompson, A. Rae, R. L. Sellin, C. Marinelli, R. V. Penty, I. H. White, A. R. Kovsh, S. S. Mikhrin, D. A. Livshits, and I. L. Krestnikov, “Subpicosecond high-power mode locking using flared waveguide monolithic quantum-dot lasers,” Appl. Phys. Lett.88(13), 133119 (2006).
[CrossRef]

T. Piwonski, J. Pulka, E. A. Viktorov, G. Huyet, and J. Houlihan, “Refractive index dynamics of quantum dot based waveguide electroabsorbers,” Appl. Phys. Lett.97(5), 051107 (2010).
[CrossRef]

M. A. Cataluna, A. R. Kovsh, and E. U. Rafailov, “Stable mode locking via ground- or excited-state transitions in a two-section quantum-dot laser,” Appl. Phys. Lett.89(8), 081124 (2006).
[CrossRef]

IEEE J. Quantum Electron. (5)

E. B. Treacy, “Optical pulse compression with diffraction gratings,” IEEE J. Quantum Electron.5(9), 454–458 (1969).
[CrossRef]

X. D. Huang, A. Stintz, H. Li, A. Rice, G. T. Liu, L. F. Lester, J. Cheng, and K. J. Malloy, “Bistable operation of a two-section 1.3-μm InAs quantum dot laser—absorption saturation and the quantum confined stark effect,” IEEE J. Quantum Electron.37(3), 414–417 (2001).
[CrossRef]

S. Arahira and Y. Ogawa, “Repetition – frequency tuning of monolithic passively mode-locked semiconductor lasers with integrated extended cavities,” IEEE J. Quantum Electron.33(2), 255–264 (1997).
[CrossRef]

T. H. Xu, M. Rossetti, P. Bardella, and I. Montrosset, “Simulation and analysis of dynamic regimes involving ground and excited state transitions in quantum dot passively mode-locked lasers,” IEEE J. Quantum Electron.48(9), 1193–1202 (2012).
[CrossRef]

S. Breuer, M. Rossetti, L. Drzewietzki, P. Bardella, I. Montrosset, and W. Elsäßer, “Joint experimental and theoretical investigations of two-state mode locking in a strongly chirped reverse-biased monolithic quantum dot laser,” IEEE J. Quantum Electron.47(10), 1320–1329 (2011).
[CrossRef]

IEEE J. Sel. of Quantum Electron. (1)

M. A. Cataluna, Y. Ding, D. I. Nikitichev, K. A. Fedorova, and E. U. Rafailov, “High-power versatile picosecond pulse generation from mode-Locked quantum-dot laser diodes,” IEEE J. Sel. of Quantum Electron.17(5), 1302–1310 (2011).
[CrossRef]

IEEE J. Sel. Top. Quantum Electron. (2)

M. G. Thompson, A. R. Rae, M. Xia, R. V. Penty, and I. H. White, “InGaAs quantum-dot mode-locked laser diodes,” IEEE J. Sel. Top. Quantum Electron.15(3), 661–672 (2009).
[CrossRef]

A. Markus, J. X. Chen, O. Gauthier-Lafaye, J. G. Provost, C. Paranthoën, and A. Fiore, “Impact of intraband relaxation on the performance of a quantum-dot laser,” IEEE J. Sel. Top. Quantum Electron.9(5), 1308–1314 (2003).
[CrossRef]

IEEE Photon. Technol. Lett. (2)

S. Schneider, P. Borri, W. Langbein, U. Woggon, R. L. Sellin, D. Ouyang, and D. Bimberg, “Excited-state gain dynamics in InGaAs quantum-dot amplifiers,” IEEE Photon. Technol. Lett.17(10), 2014–2016 (2005).
[CrossRef]

M. A. Cataluna, E. U. Rafailov, A. D. McRobbie, W. Sibbett, D. A. Livshits, and A. R. Kovsh, “Stable Mode-Locked Operation up to 80 °C From an InGaAs Quantum-Dot Laser,” IEEE Photon. Technol. Lett.18(14), 1500–1502 (2006).
[CrossRef]

IET Optoelectron. (1)

G. Carpintero, M. G. Thompson, K. Yvind, R. V. Penty, and I. H. White, “Comparison of the noise performance of 10 GHz repetition rate quantum-dot and quantum well monolithic mode-locked semiconductor lasers,” IET Optoelectron.5(5), 195–201 (2011).
[CrossRef]

J. Appl. Phys. (2)

A. Markus, M. Rossetti, V. Calligari, D. Chek-Al-Kar, J. X. Chen, A. Fiore, and R. Scollo, “Two-state switching and dynamics in quantum dot two-section lasers,” J. Appl. Phys.100(11), 113104 (2006).
[CrossRef]

M. Ueno and R. Lang, “Conditions for self-sustained pulsation and bistability in semiconductor lasers,” J. Appl. Phys.58(4), 1689–1692 (1985).
[CrossRef]

J. Phys. D Appl. Phys. (1)

L. W. Shi, Y. H. Chen, B. Xu, Z. C. Wang, Y. H. Jiao, and Z. G. Wang, “Status and trends of short pulse generation using mode-locked lasers based on advanced quantum-dot active media,” J. Phys. D Appl. Phys.40(18), R307–R318 (2007).
[CrossRef]

J. Semicond. (1)

L. W. Jiang, X. L. Ye, X. L. Zhou, P. Jin, X. Q. Lü, and Z. G. Wang, “Optical bistability in a two-section InAs quantum-dot laser,” J. Semicond.31(11), 114012 (2010).
[CrossRef]

Nat. Photonics (1)

E. U. Rafailov, M. A. Cataluna, and W. Sibbett, “Mode-locked quantum-dot lasers,” Nat. Photonics1(7), 395–401 (2007).
[CrossRef]

New J. Phys. (1)

K. A. Williams, M. G. Thompson, and I. H. White, “Long-wavelength monolithic mode-locked diode lasers,” New J. Phys.6, 179 (2004).
[CrossRef]

Opt. Express (2)

Opt. Lett. (1)

Opt. Quantum Electron. (1)

H. Kawaguchi, “Absorptive and dispersive bistability in semiconductor injection lasers,” Opt. Quantum Electron.19(S1), S1–S36 (1987).
[CrossRef]

Phys. Rev. B (1)

H. C. Schneider, W. W. Chow, and S. W. Koch, “Anomalous carrier-induced dispersion in quantum-dot,” Phys. Rev. B66(4), 041310 (2002).
[CrossRef]

Proc. IEEE (1)

M. Kuntz, G. Fiol, M. Laemmlin, C. Meuer, and D. Bimberg, “High-speed mode-locked quantum-dot lasers and optical amplifiers,” Proc. IEEE95(9), 1767–1778 (2007).
[CrossRef]

Proc. SPIE (1)

J. Y. Kim, M. T. Choi, W. K. Lee, and P. J. Delfyett., “Wavelength tunable mode-locked quantum-dot laser,” Proc. SPIE6243, 1–8 (2006).
[CrossRef]

Semicond. Sci. Technol. (1)

A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, A. Y. Egorov, N. N. Ledentsov, A. F. Tsatsul’nikov, M. V. Maximov, Y. M. Shernyakov, V. I. Kopchatov, A. V. Lunev, P. S. Kop’ev, D. Bimberg, and Z. I. Alferov, “Gain characteristics of quantum dot injection lasers,” Semicond. Sci. Technol.14(1), 118–123 (1999).
[CrossRef]

Other (1)

S. Schneider, U. K. Woggon, P. Borri, W. Langbein, D. Ouyang, R. Sellin, and D. Bimberg, “Ultrafast gain recovery dynamics of the excited state in InGaAs quantum dot amplifiers,” in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science and Photonic Applications Systems Technologies, Technical Digest Series (CD) (Optical Society of America, 2005), paper CThH6.

Cited By

OSA participates in CrossRef's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (5)

Fig. 1
Fig. 1

(a) PL spectra of the QD sample and lasing spectra of single-section lasers. (b) Modal gain and lasing wavelength as functions of current density. (dots: experimental data; lines: fitting curves).

Fig. 2
Fig. 2

L-I curves with the absorber bias swept from + 1 V to −8 V. Inset: hysteresis widths of mode-locked lasers with different length ratios as a function of the absorber bias.

Fig. 3
Fig. 3

(a) Optical spectra relative to the injection current (dots: FWHM of the optical spectra), (b) RF spectra relative to the current (dots: Lorentz-fitted −3dB RF linewidth). The absorber bias is fixed at −5 V. The color scale shows the intensity in a log scale.

Fig. 4
Fig. 4

(a) Autocorrelation traces in a log scale at different gain currents while the absorber bias is −5 V. Inset: long traces in a linear scale (b) 2D-Mapping of pulsewidths as functions of gain current and absorber bias.

Fig. 5
Fig. 5

(a) Time-bandwidth product and peak power as functions of gain current with the absorber bias fixed at −5 V. (b) Pulsewidth as a function of the distance between the two gratings. Inset: normalized autocorrelation traces with the distance from 0 to 6.9 cm.

Equations (1)

Equations on this page are rendered with MathJax. Learn more.

τ g τ a,eff g / n α / n < β 1+β .

Metrics